TW202010140A - Optical sensor, optical sensing system and method for manufacturing the same - Google Patents

Abstract

An optical sensor includes a substrate having a plurality of sensing pixels arranged into an array, a first transparent medium layer disposed over the substrate, and a plurality of micro lenses arranged into an array and disposed on or over the the first transparent medium layer. The plurality of microlenses respectively guide a plurality of parallel normal incident lights and parallel oblique incident lights which enter the plurality of microlenses from the outside, and the plurality of parallel normal incident lights and parallel oblique incident lights are incident to a portion or all of the total number of the sensing pixels through the first transparent medium layer to sense an image of a target.

Description

Optical sensor, optical sensing system and manufacturing method thereof

The invention relates to an optical element, in particular to an optical sensor with a controllable angle collimating structure, an optical sensing system and a manufacturing method thereof.

Today's mobile electronic devices (such as mobile phones, tablets, notebook computers, etc.) are usually equipped with user biometric systems, including different technologies such as fingerprints, face shapes, irises, etc., used to protect the security of personal data. Mobile devices such as mobile phones or smart watches also have the function of mobile payment, which becomes a standard function for user biometrics, and the development of mobile devices such as mobile phones is toward full screen (or ultra-narrow bezel) The trend of making traditional capacitive fingerprint buttons (such as the buttons of iphone 5 to iphone 8) can no longer be used, and has evolved new miniaturized optical imaging devices (much like traditional camera modules, with complementary metal oxide Semiconductor (Complementary Metal-Oxide Semiconductor (CMOS) Image Sensor (referred to as CIS) sensing element and optical lens module). Set the miniaturized optical imaging device under the screen (may be called under the screen), through the screen part of the light transmission (especially the organic light emitting diode (Organic Light Emitting Diode, OLED) screen), you can capture the press on the top of the screen The image of the object, especially the fingerprint image, can be called Fingerprint On Display (FOD).

After this known miniaturized optical imaging device is designed as a module, its thickness is greater than 3mm, and in order to match the user's habit of pressing the position, the position of the module will overlap with the area of some mobile phone batteries, so it is necessary The size of the battery needs to be reduced to make room for the miniaturized optical imaging device. For this reason, the battery of the mobile phone cannot be used for a long time. Because of the greater power consumption of new 5G mobile phones in the future, the use of batteries is even more cautious.

Therefore, how to provide an ultra-thin optical imaging device, especially without sacrificing the space of the battery, and can be disposed in an ultra-narrow area (>0.5 mm) between the battery and the screen, is the focus of the present invention.

An embodiment of the present invention provides an optical sensor including: a substrate having a plurality of sensing pixels arranged in an array; a first transparent medium layer located above the substrate; and a plurality of microlenses arranged in an array And located on or above the first transparent medium layer, where the microlenses respectively enter the parallel positive incident light from the outside into the microlenses, and enter the total number of sensing pixels through the first transparent medium layer Part or all of the inside, and a plurality of parallel oblique incident lights entering the microlenses from the outside are incident on part or all of the total number of sensing pixels, thereby sensing a picture of a target Like. The target produces these parallel positively incident light and these parallel obliquely incident lights. The normally incident light is parallel to the multiple optical axes of the microlenses, and each obliquely incident light is sandwiched by each optical axis angle.

An embodiment of the present invention further provides an optical sensor, including: a substrate having a plurality of sensing pixels arranged in an array; a first transparent medium layer located above the substrate; and a plurality of offset microlenses, Arranged in an array and located on or above the first transparent dielectric layer. These offset microlenses respectively enter a plurality of parallel positive incident light from the outside into the offset microlenses, and pass through the first transparent medium layer to be incident outside part or all of the total number of sensing pixels, And a plurality of parallel oblique incident lights entering the offset microlenses from the outside are incident on a part or all of the total number of sensing pixels, thereby sensing an image of a target, the target These parallel normal incident light and parallel oblique incident light are generated. The normal incident light is parallel to the multiple optical axes of the offset microlenses, and each oblique incident light is sandwiched by each optical axis An angle.

An embodiment of the present invention further provides an optical sensing system, including: a base; a battery, disposed on the base; a frame, disposed above the battery; an optical sensor, used to sense a target Image; a display for displaying information, wherein the optical sensor is mounted on the frame or attached to the lower surface of the display, the target is located on or above the display, and the optical sensor senses the image of the target through the display , Battery power for optical sensors and displays.

An embodiment of the present invention further provides a method for manufacturing an optical sensor, including the following steps: providing a substrate having a plurality of sensing pixels arranged in an array; forming a first transparent dielectric layer above the substrate; and A plurality of microlenses are formed on or above the first transparent medium layer, arranged in an array. The microlenses respectively enter a plurality of parallel positive incident light from the outside into the microlenses through a first transparent medium layer and enter the part or all of the total number of sensing pixels, and enter the outside from the outside A plurality of parallel obliquely incident lights of the microlenses are incident outside a part or all of the total number of sensing pixels, thereby sensing an image of a target, and the target produces the parallel normal incident light And the parallel oblique incident light, the normal incident light is parallel to the multiple optical axes of the microlenses, and each oblique incident light forms an angle with each optical axis.

An embodiment of the present invention further provides a method for manufacturing an optical sensor, including the following steps: providing a substrate having a plurality of sensing pixels arranged in an array; forming a first transparent dielectric layer above the substrate; and A plurality of offset microlenses are formed on or above the first transparent medium layer, arranged in an array. These offset microlenses respectively enter a plurality of parallel positive incident light from the outside into the offset microlenses, and pass through the first transparent medium layer to be incident outside part or all of the total number of sensing pixels, And a plurality of parallel oblique incident lights entering the offset microlenses from the outside are incident on a part or all of the total number of sensing pixels, thereby sensing an image of a target, the target These parallel normal incident light and parallel oblique incident light are generated. The normal incident light is parallel to the multiple optical axes of the offset microlenses, and each oblique incident light is sandwiched by each optical axis An angle.

Some embodiments of the present invention provide an optical sensor, including: a substrate, a first light-shielding layer, a microlens layer, and a first transparent medium layer. The substrate includes an array of sensing pixels. The first light-shielding layer is located above the sensing pixel array and has a plurality of first openings, wherein the first openings expose the sensing pixels of the sensing pixel array. The microlens layer is located above the first light shielding layer and includes a plurality of microlenses. The first transparent medium layer is located above the sensing pixel array and between the microlens layer and the sensing pixel array, wherein the first transparent medium layer has a first thickness. The microlens layer is used to guide incident light to penetrate the first transparent medium layer to the sensing pixels below the first openings.

Some embodiments of the present invention provide an optical sensor, including: a substrate, a first transparent medium layer, and a microlens layer. The substrate includes a sensing pixel array, wherein the sensing pixel array includes a plurality of sensing pixels, and each of the sensing pixels has a pixel size. The first transparent medium layer is located above the sensing pixel array. The microlens layer is located above the first transparent medium layer and includes a plurality of microlenses, and each of the microlenses has a diameter, wherein the microlenses are used to guide incident light through the first transparent medium layer to the senses Pixels. The pixel size is in the range of 3 microns to 10 microns, and the diameter is in the range of 10 microns to 50 microns.

Through the above embodiments, through the design of the light-shielding layer of the optical sensor, the microlens, and the sensing pixel, the sensing pixel can receive light from a specific incident angle range, eliminating unnecessary stray light, and Effectively reducing the thickness of the optical sensor can enable the optical sensor to be easily placed between the battery of a mobile phone and other electronic devices and the display, and the light source of the display can also be used to realize under-screen optical sensing.

In order to make the above content of the present invention more comprehensible, preferred embodiments are described below in conjunction with the drawings, which are described in detail below.

The following disclosure provides many embodiments or examples, and specific examples of each element and its configuration are described below to simplify the description of the embodiments of the present invention. Of course, these are only examples and are not intended to limit the embodiments of the present invention. For example, if the first element is formed on the second element in the description, it may include an embodiment where the first and second elements are in direct contact, or may include additional elements formed between the first and second elements , So that they do not directly contact the embodiment. In addition, embodiments of the present invention may repeat reference numerals and/or letters in different examples. This repetition is for conciseness and clarity, not for expressing the relationship between the different embodiments discussed.

In addition, relative terms may be used, such as "below", "below", "lower", "above", "higher" and similar terms. It is convenient to describe the relationship between one (s) element or feature and another (s) element or feature in the illustration. These spatial relative terms include different orientations of the device in use or in operation, as well as those described in the drawings position. When the device is turned to different orientations (rotated 90 degrees or other orientations), the relative adjectives used in the space will also be interpreted according to the turned orientation.

Here, the terms “about”, “approximately” and “approximately” generally mean within 20% of a given value or range, preferably within 10%, and preferably within 5%, or within 3% Within, or within 2%, or within 1%, or within 0.5%. It should be noted that the quantity provided in the description is an approximate quantity, that is, without specifying "about", "approximately", "approximately", the terms "about", "approximately" and "approximately" may still be implied The meaning of "approximately".

Although the steps in some of the described embodiments are performed in a specific order, these steps may also be performed in other logical orders. In different embodiments, some of the described steps may be replaced or omitted, and some other operations may be performed before, during, and/or after the steps described in the embodiments of the present invention. Other features can be added to the optical sensor and the optical sensing system in the embodiments of the present invention. In different embodiments, some features may be replaced or omitted.

[First group of embodiments]

FIG. 1 shows a schematic cross-sectional view of an optical sensing system according to a first embodiment of the invention. FIG. 2 shows a schematic cross-sectional view of the optical sensor according to the first embodiment of the present invention. As shown in FIGS. 1 and 2, an optical sensing system 1-600 of this embodiment, such as an electronic device of a mobile phone or a tablet computer, includes a base 1-610, a battery 1-500, and a frame 1 -400, an optical sensor 1-200 and a display 1-300.

The base 1-610 is a part of the casing of the electronic device, and the battery 1-500 is disposed on the base 1-610. The frame 1-400 is disposed above the battery 1-500, and has a receiving slot 1-410 (this receiving slot may be omitted depending on the design). The optical sensor 1-200 is installed on a receiving bottom 1-420 of the receiving slot 1-410, and is used to sense an image of a target 1-F. When the accommodating groove is omitted, the optical sensor 1-200 is installed on the frame 1-400. The display 1-300 is disposed above the optical sensor 1-200, and is used to display information. The target 1-F is located on or above the display 1-300. The optical sensor 1-200 senses the image of the target 1-F through the display 1-300, and the battery 1-500 supplies power to the optical sensor 1-200 and the display 1-300 to maintain the operation of the electronic device. The shortest distance 1-d between the accommodating bottom 1-420 of the frame 1-400 for mounting the optical sensor 1-200 and the display 1-300 is between 0.1 mm and 0.5 mm; 0.2 to 0.5 mm Time; between 0.3 and 0.5mm; or between 0.4 and 0.5mm.

The optical sensor 1-200 includes a substrate 1-201, a first transparent dielectric layer 1-207, and a plurality of microlenses 1-210. The substrate 1-201 has a plurality of sensor pixels 203 arranged in an array. The first transparent dielectric layer 1-207 is located above the substrate 1-201. The microlenses 1-210 are arranged in an array, and are located on or above the first transparent dielectric layer 1-207 (Figure 1) or above (such as Figure 9 described later). The microlenses 1-210 respectively enter a plurality of parallel normal incident light (or normal incidence light) 1-L1 entering the microlenses 1-210 from the outside through the first transparent medium layer 1-207 Part of the total number of these sensing pixels 1-203 (Figures 16A and 16B described later, referring to certain sensing pixels 1-203) or all (Figure 1) inside (indicating the corresponding sensing pixels 1-203 receives light), and a plurality of parallel obliquely incident light L2 entering these microlenses 1-210 from the outside is incident on a part of the total number of these sensing pixels 1-203 (Figure 16A and 16B, which refers to the outside of some sensing pixels 1-203) or all (Figure 1) (indicating that the corresponding sensing pixels 1-203 cannot receive light), thereby sensing the target 1-F One image. The meaning of a part of the total number of sensing pixels 1-203 is explained below. For example, the total number is (M+N) sensing pixels 1-203, where M and N are natural numbers, and the M sensing pixels 1-203 are part of the total number of sensing pixels 1-203. The meaning of the total number of sensing pixels 1-203 is explained below. For example, the total number is (M+N) sensing pixels 1-203, of which (M+N) sensing pixels 1-203 are all of the total number of sensing pixels 1-203. The target 1-F can reflect the ambient light, the light provided by the display 1-300, or a mixture of the two to generate the parallel normal incident light 1-L1 and the parallel oblique incident light 1-L2. The forward incident light 1-L1 is parallel to the multiple optical axes 1-OA of the microlenses 1-210. Each obliquely incident light 1-L2 forms an angle 1-ANG with each optical axis 1-OA. Since the normal incident light 1-L1 drawn in FIG. 2 travels in the vertical direction, it is parallel to the optical axis 1-OA. However, this embodiment does not limit the normal incident light 1-L1 to be parallel to the optical axis 1-OA. In an embodiment, the angle between the normal incident light 1-L1 and the optical axis 1-OA that can be received by the sensing pixel 1-203 through the microlens 1-210 ranges from -3.5 degrees to 3.5 degrees ; -4 degrees to +4 degrees; or -5 degrees to +5 degrees, that is, angle 1-ANG between 3.5 degrees to 90 degrees; 4 degrees to 90 degrees; or 5 degrees to Between 90 degrees. That is, obliquely incident light 1-L2 with an angle greater than 3.5 degrees or 5 degrees from the optical axis 1-OA cannot enter the sensing pixel 1-203.

The detailed structure of the first embodiment will be described below. The optical sensor 1-200 further includes a dielectric layer group 1-202, a first light-shielding layer 1-204, a protective layer 1-205, and an optical filter layer 1-206 (the protective layer 1-205 can also be (Considered to be part of the optical filter layer 1-206). The dielectric layer group 1-202 is located on the substrate 1-201 and covers the sensing pixels 1-203. The first light-shielding layer 1-204 is located on the dielectric layer group 1-202, and has a plurality of first apertures (Aperture) 1-204A. The normally incident light 1-L1 passes through the first light holes 1-204A, and the obliquely incident light 1-L2 does not pass through the first light holes 1-204A. The protective layer 1-205 is located on the first light-shielding layer 1-204, and can be filled in the first light-shielding layer 1-204. The optical filter layer 1-206 is located on the protective layer 1-205, and performs a light wavelength filtering action on these normally incident light 1-L1 and these obliquely incident light 1-L2, wherein the first transparent medium layer 1-207 Located on the optical filter layer 1-206, and these microlenses 1-210 are located on the first transparent dielectric layer 1-207.

Therefore, the present invention provides an optical sensor and an optical sensing system using the optical sensor and a manufacturing method thereof, in particular to an optical biometric sensor applied under the screen and an optical device using the optical sensor Sensing system. As shown in FIG. 1, the optical sensor 1-200 provided by the embodiment of the present invention has a controllable angle collimating structure (Angle Controllable Collimator), which includes exposing the sensing pixels 1- 203, the first light-shielding layer 1-204 and the first light hole 1-204A formed by removing a portion of the first light-shielding layer 1-204, and the optical formed on the first light-shielding layer 1-204 and the first light hole 1-204A The filter layer 1-206 and the first transparent dielectric layer 1-207, and the microlens 1-210 formed on the first transparent dielectric layer 1-207.

The controllable angle collimating structure is designed by using the relative position between the micro lens 1-210 and the first optical hole 1-204A (including the sensing pixel 1-203) (such as optical axis alignment or offset), which can be controlled Only a certain angle of incident light (normal incidence or oblique incidence) can be sensed by the sensing pixels 1-203, so the quality of the optical sensor can be effectively improved. The method for forming the controllable angle collimating structure of the optical sensor provided by the present invention has the advantages of cost and simplified manufacturing process compared with the traditional manufacturing process. The most important thing is to use this optical sensor. The height or thickness of the module design can be lower than 0.5mm, and the optical sensor module can be placed between the screen and the battery without affecting the configuration of the battery, completely solving the problems of the known technology . It is worth mentioning that the application of the sensor and optical sensor module of the present invention is not limited to the fingerprint application as described in the background art, it can also be applied to include finger veins, blood flow rate and blood oxygen Detection. What's more, it can be used for non-contact image capture, such as under-screen cameras, etc., for capturing faces or eyes or general camera functions, for face recognition or iris recognition, etc.

When the optical sensor 1-200 of FIG. 1 is applied to an optical sensing system 1-600 such as a mobile phone system, since the mobile phone system is a known technology, not all the detailed structures are shown here, but only for cooperation The optical sensor 1-200 of the present invention must be described by integrating several key elements considered together. The optical sensing system 1-600 includes a display 1-300 and an optical sensor 1-200 below the display 1-300, wherein the display 1-300 may be an organic light-emitting diode (OLED) A display or a Micro LED display, or other various display screens that may be developed in the future. In some embodiments, the display 1-300 in the optical sensing system 1-600 can be used as a light source, and the light emitted from it will illuminate the target 1-F that is in contact or non-contact with the upper surface of the display 1-300. The object 1-F then reflects this light to the optical sensor 1-200 disposed under the display 1-300 to sense and recognize the outline feature of the object 1-F (for example, the fingerprint feature of the finger). It is worth noting that the optical sensors 1-200 in the optical sensing system 1-600 can also be combined with light sources of other shapes and wavelengths (such as infrared light sources), so the embodiments of the present invention are not limited thereto. The optical sensor can also be a passive camera, that is, there is no need to project the light source onto the target object (object) 1-F to be measured. In addition, it is worth noting that for the sake of simplicity, the structure of the optical sensor 1-200 of the present invention does not show all the detailed structure layers. For example, the CMOS manufacturing process is divided into the front end (Front End Of Line, FEOL) and Back End Of Line (BEOL), the front section contains a metal oxide semiconductor (Metal Oxide Semiconductor, MOS) structure, or the back section contains a multi-layer metal connection layer and inter-metal dielectric layer (Inter-Metal Dielectric, IMD), here Most of them are omitted, and only the focus on the innovative spirit of the present invention will be described. This part will be described in detail later in the manufacturing process.

In FIG. 1, the optical sensor 1-200 is configured to be included in an optical sensor module 1-1300, and the optical sensor module 1-1300 includes a bearing hard plate 1-301, a soft The circuit board 1-1302 and the bond wire 1-1303 that electrically connects the optical sensor 1-200 and the flexible circuit board 1-1302 are encapsulated and protected by the sealant layer 1-1306. The top surface of the sealant layer 1-1306 may be flush with the top surface of the first transparent dielectric layer 1-207, but it is not limited thereto. In some embodiments, the bonding wire 1-1303 may be formed of aluminum, copper, gold, other suitable conductive materials, the above alloy, or a combination of the above.

The optical sensor module 1-1300 (including the optical sensor 1-200) is set on a frame 1-400 (commonly known as a middle frame) used for assembly and support inside a mobile phone, and the frame 1-400 is usually a metal Made of materials. As mentioned in the introduction of the present invention, in order to place the optical sensor module 1-1300 of the present invention within a narrow distance 1-d of less than 0.5 mm (in the present invention it is defined as the optical sensor module 1-1300’s The distance from the bottom to the bottom of the display 1-300), of course, the frame 1-400 can also be manufactured in advance to form a recess (as shown in the figure, of course, it is not limited to this, or the recess may not be required, or the middle frame A perforation can be formed, the module is disposed in the perforation, and the optical sensor 1-200 is installed on the frame 1-400 at this time, for the optical sensor module 1-1300 to be installed, increasing the overall Thickness design flexibility. In addition, a battery 1-500 is provided under the frame 1-400, which is used to illustrate that the main focus of the present invention is to propose an ultra-thin optical sensor module 1-1300 (without leaving room for some batteries) Including optical sensor 1-200), set between frame 1-400 (battery 1-500) and display 1-300, of course, in order to facilitate production and maintenance, it can also be glued, screwed or other methods fixed.

According to some embodiments of the present invention, the optical sensor 1-200 shown in FIG. 1 includes a substrate 1 having sensing pixels (eg, photodiode) 1-203 arranged in an array. -201, a dielectric layer group (which may include one or more dielectric layers and one or more metal wire layers) 1-202, a first light-shielding layer 1-204 with a plurality of first light holes 1-204A, protection Layer 1-205, optical filter layer 1-206 (for filtering infrared light in sunlight, of course not limited thereto), first transparent layer 1-207, and microlens 1-210. In some embodiments, the first light hole 1-204A and the sensing pixel 1-203 can be a one-to-one, one-to-many, or many-to-one design; the microlens 1-210 and the sensing pixel 1-203 It can also be a one-to-one, one-to-many or many-to-one design.

The operation principle of the optical sensor 1-200 of the present invention will be explained below with reference to FIG. 2. Normally incident light 1-L1, obliquely incident light 1-L2 are respectively incident on the optical sensor 1- at different angles 1- 200. If the microlens 1-210 and the first optical hole 1-204A are aligned on the same optical axis, then due to the focusing effect of the lens, the normal incident light 1-L1 will be focused to the sensing pixel 1-203, but obliquely The incident light 1-L2 is also focused off the optical axis due to the lens effect, and thus is blocked by the first light shielding layer 1-204. Therefore, it has the function of controllable angle collimation structure. FIG. 3 shows the characteristic curve of the optical sensor according to the first embodiment of the present invention. Figure 3 clearly shows that using the data measured by the present invention, the divergence angle of the half-height width of only about 3.5 degrees can be easily controlled, proving the particularity and superiority of the controllable angle collimating structure of the present invention.

FIG. 4 shows a schematic cross-sectional view of an optical sensing system according to a second embodiment of the invention. As shown in FIG. 4, this embodiment is similar to the first embodiment, except that the optical filter layer 1-206 formed by integrated wafer manufacturing (wafer thin film manufacturing process) is an optical filter plate 1- Replaced by 900, where the optical filter board 1-900 is an independent optical filter board assembled by a rear-end module, using a dam structure or frame 1-1305 provided on a flexible circuit board 1-1302, using For carrying the optical filter plate 1-900, the remaining parts are the same as the description of the components in FIG. 1, so they will not be described here. Therefore, the protective layer 1-205 is located on the first light-shielding layer 1-204, and the microlenses 1-210 are located on the first transparent dielectric layer 1-207. The optical filter plate 1-900 is located above the microlenses 1-210, and performs light wavelength filtering on the normal incident light 1-L1 and the obliquely incident light 1-L2. For example, the optical filter plate 1-900 is disposed above the microlens 1-210 through the optical sensor module 1-1300.

It is worth noting that although the optical sensor module 1-1300 of the optical sensing system 1-600 of the present invention is disposed above or in the middle of the frame 1-400, other embodiments may also be attached to the display 1 The surface of -300 is 1-300B.

FIG. 5 shows a schematic diagram of the working state of the optical sensor according to the first embodiment of the present invention. As shown in FIG. 5, because the arrayed microlenses 1-210 will leave blank areas (such as the area indicated by the gap 1-G) between them during manufacturing, as shown in the flat area. This is mainly because the microlens 1-210 has a circular structure, and the array of sensing pixels 1-203 under the microlens 1-210 cannot fully match the geometric dimensions of the microlens 1-210 because of the layout of the photomask. Therefore, if light is incident from the blank area between the microlenses 1-210, such as the second oblique incident light (or stray light from the adjacent gap) L3 shown in the figure, it enters the first light hole 1-204A The exposed sensing pixels 1-203 will cause stray light interference and reduce the image quality.

FIG. 6 shows a schematic cross-sectional view of an optical sensor according to a third embodiment of the invention. As shown in FIG. 6, this embodiment is similar to the first embodiment, except that a lens light-shielding layer 1-211 is provided in the space between adjacent microlenses 1-210, and only the microlenses 1-210 are exposed. This can effectively solve the problem of stray light interference in the adjacent gap caused by the second oblique incident light 1-L3.

Therefore, the optical sensor 1-200 may further include a lens shading layer 1-211, located on the first transparent dielectric layer 1-207, and a plurality of gaps 1-G between the microlenses 1-210, to shield A plurality of parallel second obliquely incident lights 1-L3 entering the gaps 1-G from the outside are prevented from entering the first transparent dielectric layer 1-207 and the sensing pixels 1-203. The characteristics of the obliquely incident light 1-L2 in FIG. 2 are also applicable to this embodiment, so please also refer to the relevant description in FIG. 2.

FIG. 7 shows the characteristic curve of the optical sensor according to the third embodiment of the present invention. As shown in Figure 7 for the actual measurement results, stray light in the adjacent gap between the microlenses 1-210 can be effectively suppressed. For example, curve 1-CV1 is the result of not providing the lens shading layer 1-211, while curve 1-CV2 is the result of having the lens shading layer 1-211.

FIG. 8 is a schematic diagram showing another working state of the optical sensor according to the first embodiment of the present invention. As shown in Fig. 8, similar to the stray light interference of adjacent gaps in Fig. 5, when adjacent microlenses (not limited to the first adjacent microlens) will have crosstalk (Cross Talk) problems, That is, the third oblique incident light (or adjacent lens stray light) of the adjacent microlens 1-210N of the target microlens 1-210M will be coupled into the normal incidence of the target microlens 1-210M The light 1-L1 is incident on a target sensing pixel 1-203M exposed from the first light hole 1-204A together, which may cause interference and reduce image quality. The method for solving the above problems will be explained below.

FIG. 9 shows a schematic cross-sectional view of an optical sensor according to a fourth embodiment of the invention. As shown in FIG. 9, the optical sensor 1-200 further includes a second light-shielding layer 1-208 and a second transparent dielectric layer 1-209. The second light-shielding layer 1-208 is located on the first transparent dielectric layer 1-207, and has a plurality of second light holes 1-208A. The optical axes 1-OA pass through the second light holes 1-208A, respectively. The second transparent dielectric layer 1-209 is located on the second light shielding layer 1-208. These microlenses 1-210 are located on the second transparent dielectric layer 1-209. To simplify the description, one of the microlenses 1-210 is defined as the target microlens 1-210M, and the optical axis 1-OA of the target microlens 1-210M is defined as a target optical axis 1-OAM and the target optical axis 1 -The sensing pixel 1-203 passed by OAM is defined as the target sensing pixel 1-203M, and the microlenses 1-210 adjacent to the target microlens 1-210M are defined as adjacent microlenses 1-210N. In this state, the second light shielding layer 1-208 shields a plurality of parallel third oblique incident light 1-L4 entering the adjacent microlenses 1-210N from the outside from entering the first transparent dielectric layer 1-207 And target sensing pixels 1-203M. The characteristics of the obliquely incident light 1-L2 in FIG. 2 are also applicable to this embodiment, so please also refer to the relevant description in FIG. 2.

Therefore, by providing the second light-shielding layer 1-208 and the second light hole 1-208A between the microlens 1-210 and the first light-shielding layer 1-204 and the first light hole 1-204A, the effective Light interference caused by crosstalk between adjacent lenses.

Figure 10 shows the characteristic curve of the optical sensor of Figure 8. Figure 11 shows the characteristic curve of the optical sensor of Figure 9. As shown in FIG. 10, when the second light-shielding layer 1-208 is not provided, the sensing pixel receives normal incident light 1-L1 (through the target microlens 1-210M) and the third oblique incident light 1-L4 (Through the adjacent microlens 1-210N), causing image ghosting. As shown in FIG. 11, when the second light-shielding layer 1-208 is provided, the sensing pixel receives only the normal incident light 1-L1, but does not receive the third oblique incident light, which does not cause image repetition. Shadow phenomenon. Therefore, the second light-shielding layer 1-208 can effectively solve the crosstalk problem, enhance the signal quality, and improve the image clarity. At the same time, by providing the second light-shielding layer 1-208, not only can the crosstalk problem be effectively solved, but also the stray light interference in the blank area between the microlenses described in FIG. 5 can also be suppressed at the same time, which is very effective. The bird's approach.

，也就是

。FIG. 12 shows a partial cross-sectional view of the working principle of the optical sensor according to the fourth embodiment of the invention. Through the superior characteristics of the structure of Figure 9, Figure 12 can explain in more detail how to combine the geometric design of the microlens 1-210, the first light hole 1-204A and the second light hole 1-208A and combine the first transparent medium For the control of layers 1-207 and the second transparent dielectric layer 1-209, optical sensors with different resolutions are designed to be used in different systems and applications. When designing any kind of sensing array element, there is a figure of merit (Figure Of Merit) which is to maximize the effective fill factor (effective sensing area area/single pixel area) of a single sensing element. Applying this concept to the optical sensor of the present invention is to increase the fill factor of each microlens 1-210 (including the corresponding sensing pixel 1-203). In Figure 6, the optimal fill factor That is, there is almost no gap between adjacent microlenses 1-210. In Figure 12, A1 is the diameter (aperture) of the first light hole 1-204A, and A2 is the diameter (aperture) of the second light hole 1-208A, and h is the first light-shielding layer 1-204 and the second light-shielding The thickness between layers 1-208, and H is the thickness between the first light-shielding layer 1-204 and the bottom surface 1-210B of the microlens 1-210. Through the geometric triangle relationship (similar triangles), a resolution design formula can be obtained, that is, X (pitch or pitch between two microlenses 1-210) is expressed as follows:

, That is

.

When used as a fingerprint sensor, a preferred embodiment may be designed such that H is approximately 43 μm, h is approximately 15 μm, A1 is approximately 4.5 μm, and A2 is approximately 9 μm. According to the above formula, X is approximately 20 μm. Therefore, this formula can be used as a design criterion for designing optical sensors with different resolutions. Of course, since the manufacturing process cannot be perfect, this formula is not a complete "=" sign, but an "" approximate number, which The error can be tolerated within 20µm.

Therefore, in the optical sensor 1-200, the first light shielding layer 1-204 is located above the substrate 1-201 and has a plurality of first light holes 1-204A; the second light shielding layer 1-208 is located on the first light shielding Above the layer 1-204, there are a plurality of second light holes 1-208A. The microlenses 1-210 are respectively located above the second light holes 1-208A, and the optical axes 1-OA pass through the second light holes 1-208A and the first light holes 1-204A, respectively. The pitch X of these microlenses 1-210 is expressed by the following formula:

X=A1+(H/h)*(A2-A1)±20µm

Where A1 represents the aperture of the first light hole 1-204A, A2 represents the aperture of the second light hole 1-208A, and H represents the distance between the bottom surface 1-210B of the microlens 1-210 and the first light-shielding layer 1-204, h represents the distance between the second light-shielding layer 1-208 and the first light-shielding layer 1-204.

FIG. 13 shows a schematic cross-sectional view of an optical sensor according to a fifth embodiment of the invention. As shown in FIG. 13, this embodiment is similar to the first embodiment, except that the lateral dimension of the sensing pixel 1-203' (the horizontal dimension in FIG. 13) is designed to receive these positive directions The incident light 1-L1, but does not receive these obliquely incident light 1-L2, and the optical sensor 1-200 is between the first transparent dielectric layer 1-207 and the sensing pixels 1-203' There is no light shielding layer to shield these obliquely incident light 1-L2.

In detail, in the optical sensor 1-200, the dielectric layer group 1-202 is located on the substrate 1-201 and covers the sensing pixels 1-203', and the protective layer 1-205 is located in the dielectric layer On the group 1-202, the optical filter layer 1-206 is located on the protective layer 1-205, and performs a light wavelength filtering action on these normally incident light 1-L1 and these obliquely incident light 1-L2. The first transparent dielectric layer 1-207 is located on the optical filter layer 1-206, and the microlenses 1-210 are located on the first transparent dielectric layer 1-207. Therefore, in this embodiment, there is no design of the first light-shielding layer 1-204 and the first light hole 1-204A in FIG. 2, but the geometric dimensions of the pixel 1-203' (about the equivalent of the second The size of the first light hole 1-204A in the figure) to avoid the interference caused by the obliquely incident light 1-L2 in the second figure, which can effectively simplify the manufacturing process steps and costs.

FIG. 14 shows a schematic partial cross-sectional view of an optical sensor according to a sixth embodiment of the invention. Figure 15 shows the characteristic curve of the optical sensor of Figure 14. 16A and 16B show partial cross-sectional views of two examples of the optical sensor according to the seventh embodiment of the invention. As shown in FIGS. 14 to 16, to avoid confusion, only the hatching of the shading layer is drawn. This embodiment is similar to the first embodiment, except that the optical sensor 1-200 further includes: Two offset microlenses 1-210A, arranged in an array, and located on or above the first transparent dielectric layer 1-207; and a lens shading layer 1-211 similar to FIG. 6, located on the first transparent dielectric layer 1-207 Above, and these offsets in the gap 1-G between the microlenses 1-210A. In FIG. 16A, the offset microlenses 1-210A are arranged around the periphery of the microlenses 1-210. The microlenses 1-210 respectively incident the parallel normal incident light 1-L1 inside a portion of the total number of the sensing pixels 1-203, and the parallel oblique incident light 1-L2 ( (See Fig. 2) incident outside part of the total number of these sensing pixels 1-203. The offset microlenses 1-210A respectively enter a plurality of parallel second normal incident lights 1-L1' entering the offset microlenses 1-210A from the outside through the first transparent dielectric layer 1-207 On the outside of the remaining parts of the total number of sensing pixels 1-203, a plurality of parallel fourth oblique incident light 1-L5 entering these offset microlenses 1-210A from the outside are incident on these senses Measure the interior of the rest of the 1-203 total. The target 1-F generates the parallel second normal incident light 1-L1' and the parallel fourth oblique incident light 1-L5. The second normal incident light 1-L1' is parallel to the multiple optical axes 1-OAA of the offset microlenses 1-210A. Each fourth obliquely incident light 1-L5 forms a second angle 1-ANG2 with each optical axis 1-OAA (see FIG. 14). As shown in the angle response result in FIG. 15, this embodiment can control the fourth oblique incident light 1-L5 of about 35 degrees ± 3.5 degrees to enter the sensing pixel 1-203, which is the second of this embodiment. Angle 1-ANG2 is between 31.5 degrees and 38.5 degrees, of course, this second angle 1-ANG2 can be selected by design, in the present invention, any angle between 3.5 or 5 degrees to 60 degrees The oblique incident light may be incident inside the sensing pixel 1-203. Therefore, the second angle 1-ANG2 can be selectively changed. FIG. 16B is similar to FIG. 16A, except that the second light-shielding layer 1-208 and the second transparent dielectric layer 1-209 are incorporated. For related features, please refer to the relevant description in FIG. 9, which will not be repeated here.

Therefore, in FIG. 14, the design of the collimator that allows only the forward incident light 1-L1 in the foregoing embodiments is changed to all or part of the pixels to only allow the fourth oblique incident light 1-L5 to enter Among them, either incident light of several oblique angles is allowed, or incident light of gradually changing incident oblique angle is allowed to enter. Since there are many ways to implement, in order to simplify the description, Figure 14 only describes the design that allows a specific oblique angle of incidence. As shown in the figure, there is no need to add new materials or structures (compared to Figure 2), but the optical axis of the microlens 1-210 is shifted by design so that it does not correspond to the corresponding first optical aperture 1-204A is aligned, so that the light including the normal incidence will be blocked by the first light-shielding layer 1-204 (as the second normal incidence light 1-L1' in FIG. 14). From the actual measurement data shown in Figure 14, it can be seen that even when the incident light is at an oblique angle of about 35 degrees, the quality with a half-height width of about 3.5 degrees can still be obtained (compared to the normal incidence data of Figure 3 ).

Applying the inventive spirit of Figure 14, Figures 16A and 16B combine Figures 2 and 14 with the microlens 1-210 corresponding from the center to the periphery in the array of sensing pixels 1-203 The offset of the optical axis from the optical aperture is offset from 0 degrees to a predetermined oblique angle (for example, 35 degrees), where several oblique angles (offset of several optical axes) can be allowed, Or it is a gradual change of the incident oblique angle (continuous optical axis offset), so that the area 1-SR of the array of 1-2-3 sensing pixels can be used to sense a larger object to be measured Area 1-CR (for example, fingerprint contact area) not only increases the accuracy of sensing (increases as the area increases), but also effectively reduces the cost (decreases as the area of the sensor decreases). Those skilled in the art can use the description of several embodiments of the present invention to combine different designs, which are not beyond the scope of this embodiment and the invention.

It is worth noting that, according to the structure shown in FIG. 14, this embodiment also provides an optical sensor 1-200, including a substrate 1-201, a first transparent dielectric layer 1-207, and a plurality of offset micros Lens 1-210A. The substrate 1-201 has a plurality of sensing pixels 1-203 arranged in an array. The first transparent dielectric layer 1-207 is located above the substrate 1-201. These offset microlenses 1-210A are arranged in an array and are located on or above the first transparent dielectric layer 1-207. The offset microlenses 1-210A respectively enter a plurality of parallel positive incident lights 1-L1' entering the offset microlenses 1-210A from the outside through the first transparent medium layer 1-207 Some or all of the total number of the sensing pixels 1-203 are external, and a plurality of parallel fourth oblique incident light 1-L5 entering the offset micro lenses 1-210A from the outside are incident on the sensing Part or all of the total number of pixels 1-203, thereby sensing an image of a target 1-F, the target 1-F generates these parallel normal incident light 1-L1' and these parallel The fourth obliquely incident light 1-L5, the positively incident light 1-L1' are parallel to the multiple optical axes 1-OAA of the offset microlens 1-210A, the fourth obliquely incident light 1- A second angle 1-ANG2 is formed between L5 and each optical axis 1-OAA.

In the optical sensor 1-200, the dielectric layer group 1-202 is located on the substrate 1-201 and covers the sensing pixels 1-203; the first light-shielding layer 1-204 is located in the dielectric layer group 1-202 And has a plurality of first light holes 1-204A. The forward incident light 1-L1' does not pass through the first light holes 1-204A, and the fourth oblique incident light 1-L5 passes through the first light holes 1-204A. The protective layer 1-205 is located on the first light-shielding layer 1-204. The optical filter layer 1-206 is located on the protective layer 1-205, and performs a light wavelength filtering action on the forward incident light 1-L1' and the fourth oblique incident light 1-L5. The first transparent dielectric layer 1-207 is located on the optical filter layer 1-206, and the offset microlenses 1-210A are located on the first transparent dielectric layer 1-207. The optical sensor 1-200 of FIG. 14 can also be applied to the optical sensing system 1-600 of FIG. 1. Those with ordinary knowledge in the art can easily speculate on its application to the optical sensor system 1-600 of FIG. 1. The way of setting is not detailed here.

FIGS. 17A to 17E show schematic cross-sectional views of the steps of the method for manufacturing the optical sensor according to the eighth embodiment of the present invention. The structure of this embodiment is similar to the first embodiment of FIG. 2, except that it further has a lens shading layer 1-211. First, as shown in FIG. 17A, a substrate 1-201 with a plurality of sensing pixels 1-203 is arranged in an array. Next, as shown in FIGS. 17B to 17D, a first transparent dielectric layer 1-207 is formed over the substrate 1-201. In detail, as shown in FIG. 17B, a dielectric layer group 1-202 is formed on the substrate 1-201, and then a first light-shielding layer 1-204 is formed on the dielectric layer group 1-202 (that is, on the substrate 1 -201 and a first transparent dielectric layer 1-207 form a first light-shielding layer 1-204) and a first light hole 1-204A. Then, as shown in FIG. 17C, a protective layer 1-205 is formed on the first light-shielding layer 1-204 and the first light hole 1-204A, and then an optical filter layer 1-206 is formed on the protective layer 1-205. Next, as shown in FIG. 17D, a first transparent dielectric layer 1-207 is formed on the optical filter layer 1-206. Then, a plurality of microlenses 1-210 are formed on or above the first transparent dielectric layer 1-207, arranged in an array, and thus the optical sensor 1-200 of FIG. 2 is formed.

Next, as shown in FIG. 17E, a lens shading layer 1-211 is formed on the first transparent dielectric layer 1-207 and between the microlenses 1-210. That is, the lens shading layer 1-211 is formed in the plurality of gaps 1-G between the microlenses 1-210.

It is worth noting that the above manufacturing method can also be applied to the offset microlens 1-210A of FIG. 14 to manufacture the optical sensor 1-200 with the offset microlens 1-210A. Those who have ordinary knowledge in the art can easily decipher the manufacturing method of the optical sensor 1-200, so it will not be described in detail here.

18A to 18F show schematic cross-sectional views of the steps of the method for manufacturing the optical sensor according to the ninth embodiment of the present invention. The structure of this embodiment is similar to the fourth embodiment of FIG. 9 except that it further has a lens shading layer 1-211. FIGS. 19A to 19F are schematic cross-sectional views of the steps of the method for manufacturing the optical sensor according to the tenth embodiment of the present invention. The structure of this embodiment is similar to the fifth embodiment of FIG. 13 except for the second light-shielding layer 1-208, the second transparent dielectric layer 1-209, and the lens light-shielding layer 1-211.

Hereinafter, FIGS. 17A to 17F, FIGS. 18A to 18F, and FIGS. 19A to 19F will be comprehensively described through the structural drawings of each step of the manufacturing method.

In FIGS. 17A/18A/19A, the substrate 1-201 may be a semiconductor substrate, such as a silicon substrate. In addition, in some embodiments, the semiconductor substrate may also be an elemental semiconductor (Elemental Semiconductor), including: Germanium (Germanium); a compound semiconductor (Compound Semiconductor), including: gallium nitride (Gallium Nitride), silicon carbide (Silicon Carbide) ), Gallium Arsenide, Gallium Phosphide, Indium Phosphide, Indium Arsenide and/or Indium Antimonide; Alloy Semiconductor , Including: silicon germanium alloy (SiGe), phosphorous arsenic gallium alloy (GaAsP), arsenic aluminum indium alloy (AlInAs), arsenic aluminum gallium alloy (AlGaAs), arsenic indium gallium alloy (GaInAs), phosphorous indium gallium alloy (GaInP), And/or Indium Gallium Phosphate Arsenic Alloy (GaInAsP), or a combination of the above materials. In other embodiments, the substrate 1-201 may also be a Semiconductor On Insulator (Semiconductor On Insulator) substrate, which may include a base plate, a buried oxide layer provided on the base plate, and a buried oxide Semiconductor layer on the layer. In addition, the substrate 1-201 may be an N-type or P-type conductivity type.

In some embodiments, the substrate 1-201 may include various isolation components (not shown) for defining an active area, and electrically isolate the active area elements in/on the substrate 1-201. In some embodiments, the isolation features include Shallow Trench Isolation (STI) features, local oxidation of silicon (LOCOS) features, other suitable isolation features, or a combination of the foregoing.

In some embodiments, the substrate 1-201 may include various P-type doped regions and/or N-type doped regions (not shown) formed by, for example, ion implantation and/or diffusion processes. In some embodiments, the doped regions may form transistors, photodiodes (Photodiode) and other elements. In addition, the substrate 1-201 may also include various active components, passive components, and various conductive components (eg, conductive pads, wires, or vias).

An array of sensing pixels 1-203/1-203' is formed in the substrate 1-201, and the sensing pixels 1-203/1-203' can be connected with a signal processing circuit (Signal Processing Circuitry) (not shown) connection. In some embodiments, the number of sensing pixels 1-203/1-203' depends on the size of the optical sensing area 1-SR. Each sensing pixel 1-203/1-203' may contain one or more photo detectors (Photodector). In some embodiments, the photodetector may include a photodiode, wherein the photodiode may include a P-type semiconductor layer, an intrinsic layer, and an N-type semiconductor layer. ), the intrinsic layer absorbs light to generate excitons, and the excitons are divided into electrons and holes at the junction of the P-type semiconductor layer and the N-type semiconductor layer, thereby generating a current signal. In some embodiments, the light detector may be a CMOS image sensor, such as a front-side illumination (FSI) CMOS image sensor or a back-side illumination (BSI) CMOS image. Like a sensor. In some other embodiments, the photodetector may also include a charge coupled device (Charged Coupling Device, CCD) sensor, an active sensor, a passive sensor, other suitable sensors, or a combination of the foregoing. In some embodiments, the sensing pixels 1-203/1-203' may convert the received optical signal into an electronic signal through a photodetector, and process the electronic signal through a signal processing circuit.

In some embodiments, the sensing pixels 1-203/1-203' are arranged in an array, thereby forming an array of sensing pixels. However, the cross-sectional view shown in FIG. 2 shows only one row of the array of sensing pixels 1-203/1-203' and is located below the upper surface of the substrate 1-201. It is worth noting that the number and arrangement of the sensing pixels 1-203/1-203' shown in the figures of all the embodiments are merely exemplary, and the embodiments of the present invention are not limited thereto. The sensing pixels 1-203/1-203' can be an array with any number of rows and columns or other arrangements.

In Figure 17B/18B/19B, the dielectric layer group 1-202 is formed above the substrate 1-201 and the sensing pixels 1-203/1-203', and the dielectric layer group 1-202 is mainly an integrated circuit The combination of the BEOL metal connection line and the inter-metal dielectric layer in the later stage of the manufacturing process is not described here because it is a known technology. Special attention is paid to the design when there is no metal on the incident light path to avoid Obscured. Next, a first light-shielding layer 1-204 is formed on the dielectric layer group 1-202. The first light-shielding layer 1-204 may include a light-shielding material, which has a light transmittance of less than 1% for a wavelength range below 1200 nanometers, but of course it is not limited thereto.

In some embodiments, the first light-shielding layer 1-204 may include a metal material (in this embodiment, the last metal in the manufacturing process of the integrated circuit), such as tungsten (W), chromium (Cr), aluminum (Al), or Titanium (Ti), etc. In this embodiment, for example, chemical vapor deposition (CVD), physical vapor deposition process (Physical Vapor Deposition, PVD) (for example: Vacuum Evaporation Process), sputtering process ( Sputtering Process), Pulsed Laser Deposition (PLD), Atomic Layer Deposition (ALD), other suitable deposition processes, or a combination of the foregoing to blanketly form the first light-shielding layer 1- 204. In some embodiments, the first light-shielding layer 1-204 may include a polymer material having light-shielding properties, such as epoxy resin, polyimide, and the like. In this embodiment, the first light-shielding layer 1-204 may be formed in the dielectric layer group by, for example, spin-coating, chemical vapor deposition (CVD), other suitable methods, or a combination thereof 1-202. The thickness of the first light-shielding layer 1-204 formed by the above method is in the range of about 0.3 micrometer (micrometer, µm) to about 5 micrometers, for example, 2 micrometers. In some embodiments, the selected thickness of the first light-shielding layer 1-204 depends on the light-shielding ability of the material of the first light-shielding layer 1-204, for example, the light-shielding ability of the light-shielding material included in the first light-shielding layer 1-204 is Negative correlation.

Next, a patterning process is performed on the first light-shielding layer 1-204 to form a plurality of first light holes 1-204A having a first aperture A1. The above patterning process may include a photolithography process and an etching process. The photolithography process may include, for example: photoresist coating (e.g. spin coating), soft baking, exposure pattern, post-exposure baking, photoresist development, cleaning and drying (e.g. hard baking), other suitable processes, or the above combination. The etching process may include, for example, a wet etching process, a dry etching process (such as reactive ion etching (RIE), plasma etching, ion milling), other suitable processes, or the above combination. The first pore size A1 formed by the above method is in the range of about 0.3 micrometers to about 50 micrometers, for example, about 4 micrometers to about 5 micrometers.

It is worth noting that the first light hole 1-204A and the sensing pixels 1-203 shown in FIG. 5 are correspondingly arranged in a one-to-one manner. However, in other embodiments of the invention The first light hole 1-204A and the sensing pixels 1-203 can also be correspondingly set in a one-to-many or many-to-one manner. For example, one first light hole 1-204A can expose more than two sensing pixels 1-203 (not shown), or one sensing pixel 1-203 can be from more than two first light holes 1-204A is exposed (not shown). Fig. 5 only shows an exemplary arrangement, and the invention is not limited thereto. According to some embodiments of the present invention, by controlling the first aperture A1 of the patterned first light-shielding layer 1-204, the range of the angle of view of the incident light can be adjusted.

In FIG. 17C/18C/19C, a protective layer 1-205 and an optical filter layer 1-206 are formed over the first light-shielding layer 1-204 and the first light hole 1-204A. In this embodiment, the protective layer 1-205 is a protective layer of an integrated circuit, which may be silicon oxide or silicon nitride material or a combination of both. Of course, this protective layer 1-205 may not be required (see FIG. 20 and FIG. 21), for example, when the material of the first light-shielding layer 1-204 is a polymer material having light-shielding properties. The optical filter layer 1-206 may be an infrared filter layer (Infrared Cut Filter, ICF). Visible light has a high transmittance for this infrared filter layer, and infrared light has a high reflectivity for it, which can reduce the interference of infrared rays from sunlight, for example.

In FIG. 17D/19D, a first transparent dielectric layer 1-207 is formed on the optical filter layer 1-206, and the first transparent dielectric layer 1-207 may include a photocurable material (UV-Curable Material) and a thermosetting material ( Thermosetting Material), or a combination of the above. For example, the first transparent dielectric layer 1-207 may include, for example, Poly (Methyl Methacrylate) (PMMA), Polyethylene Terephthalate (PET), Polynaphthalene Dicarboxylic Acid Polyethylene naphthalate (PEN) Polycarbonate (PC), perfluorocyclobutyl (PFCB) polymer, polyimide (Polyimide, PI), acrylic resin, epoxy resin ( Epoxy resins, polypropylene (Polypropylene, PP), polyethylene (Polyethylene, PE), polystyrene (Polystyrene, PS), polyvinyl chloride (Polyvinyl Chloride, PVC), other suitable materials, or combinations thereof. In some embodiments, Spin-Coating, Dry Film process, Casting, Bar Coating, Blade Coating, Roller Coating , Wire Bar Coating, Dip Coating, Chemical Vapor Deposition (CVD), and other suitable methods. In some embodiments, the thickness of the first transparent dielectric layer 1-207 formed by the above method is in the range of about 1 micrometer to about 100 micrometers, for example, 10-50 micrometers. According to some embodiments of the present invention, the first transparent dielectric layer 1-207 formed by the above-mentioned manufacturing method has high yield and good quality. In addition, by controlling the thickness of the first transparent dielectric layer 1-207, the distance that light deflects after passing through the microlens 1-210 can be increased or decreased, thereby increasing the angle of incident light that the array of sensing pixels 1-203 can receive Precision.

The microlens 1-210 is formed above the first transparent dielectric layer 1-207, both of which may be a homogenous material or a heterogeneous material (here homogenous), and the formation method is generally to reflow a thick film by high temperature (Reflow) Molecular materials form hemispherical structures through cohesion. Of course, the first transparent dielectric layer 1-207 and the microlens 1-210 can also be dielectric materials, such as glass, etc., which can further improve the light transmittance. In these embodiments, the step of drying (e.g., hard baking) in the lithography process can utilize the effect of surface tension to form hemispherical microlenses 1-210, and the desired temperature can be adjusted by controlling the heating temperature The radius of curvature of lens 1-210. In some embodiments, the thickness of the formed microlens 1-210 ranges from about 1 micrometer to about 50 micrometers. It is worth noting that the contour of the microlens 1-210 is not limited to a hemispherical shape, and the embodiment of the present invention can also adjust the contour of the microlens 1-210 according to the required incident light angle, for example, it can be aspherical ( aspheric).

In FIG. 18D/19D, it is a structure in which a second light-shielding layer 1-208 is added, and its material characteristics in this embodiment are the same as those of the first light-shielding layer 1-204, which will not be repeated here. In addition, the second light hole 1-208A is formed in the second light-shielding layer 1-208 by photolithography technology, which is the same as the forming method of the first light hole 1-204A, and will not be repeated here.

In FIG. 18E/19E, a second transparent dielectric layer 1-209 is formed over the second light-shielding layer 1-208 and the second light hole 1-208A. The material and forming method of the second transparent dielectric layer 1-209 and the first A transparent medium layer 1-207 is the same and will not be repeated here. In summary, a second light shielding layer 1-208 and a second transparent dielectric layer 1-209 are formed between the microlens 1-210 and the first transparent dielectric layer 1-207. Finally, a microlens 1-210 is formed over the second transparent dielectric layer 1-209. The forming method and materials have been described above, and are omitted here.

In Figure 17E/18F/19F, a lens shading layer 1-211 can be further formed in the space between the microlenses 1-210 according to requirements. The material of the lens shading layer 1-211 can be the same as the first shading layer 1-204/the material of the second light-shielding layer 1-208, so it will not be repeated here.

FIG. 20 shows a schematic cross-sectional view of the structure of an optical sensor according to a modification of the eighth embodiment of the present invention. In this modification, the structure of the protective layer 1-205 in FIG. 17E is omitted, and the similarities will not be repeated. In this modification, the optical filter layer 1-206 is located on the first light-shielding layer 1-204, and can be filled in the first light hole 1-204A. This can reduce the number of manufacturing steps, reduce manufacturing costs, and reduce the thickness of the optical sensor.

FIG. 21 shows a schematic cross-sectional view of the structure of an optical sensor according to a modification of the tenth embodiment of the present invention. This modification is to omit the structure of the protective layer 1-205 in FIG. 19F, and the similarities will not be repeated. In this modification, the optical filter layer 1-206 is located on the dielectric layer group 1-202. This can reduce the number of manufacturing steps, reduce manufacturing costs, and reduce the thickness of the optical sensor.

In summary, the optical sensing system provided by the embodiments of the present invention includes a design that uses a display (such as a screen panel of a mobile device) as a light source. Furthermore, in the optical sensing system, the configuration and/or other parameters of the first openings of the microlenses with different lateral offset distances and/or the first light-shielding layer included in the optical sensor (such as the The configuration of the aperture, the thickness of the first transparent medium layer, and/or the radius of curvature of the microlens can enable the sensing pixels to receive light from different incident angle ranges. According to this, light incident from a specific range of field angles can be incident on the sensing pixels. In addition, since the optical sensing system provided by the present invention can receive light incident at oblique angles, the area of the optical sensing area can be smaller than the area of the object to be measured, thereby realizing a reduction in the area of the optical sensor and achieving good image quality Technical effect.

In summary, the embodiments of the present invention can achieve the sensing pixels without the additional light-shielding layer through the configuration of the micro lens and the sensing pixels with a smaller size that meet the above relationship Can receive light from a specific range of field angles, and can reduce the thickness of the optical sensor. By arranging the circuit design between sensing pixels with a smaller size, the integration density of the optical sensor can be effectively improved. The optical sensor provided by the embodiments of the present invention may use a display (such as a screen panel of a mobile device) as a light source design. Furthermore, the configuration and/or other parameters of the microlens layer with different lateral offset distances and sensing pixels included in the optical sensor (such as the size of the sensing pixel, the refractive index of the first transparent medium layer, The configuration of the thickness of the first transparent medium layer, the focal length of the microlens, and the diameter of the microlens can enable the sensing pixels to receive light from different incident angle ranges. According to this, light incident from a specific range of field angles can be incident on the sensing pixels.

[Second set of embodiments]

The invention provides an optical sensor, an optical sensing system and a forming method thereof, in particular to an optical sensor and an optical sensing system applied to an optical fingerprint recognition system under the screen. The optical sensor provided by the embodiment of the present invention has a virtual collimator structure. The virtual collimator structure includes a first light-shielding layer exposing a sensor pixel and is formed on the first light-shielding layer And the first transparent medium layer covering the sensing pixels and the micro lens formed on the first transparent medium layer. This virtual collimating structure uses micro lenses to guide incident light to penetrate the first transparent medium layer to the sensing pixels exposed from the first light-shielding layer. The formation method of the virtual collimating structure of the optical sensor provided by the present invention has advantages of lower cost and difficulty compared with the traditional manufacturing process. Moreover, the thickness of the optical sensor including the virtual collimation structure provided by the present invention can be less than 500 microns (micrometers, um), which is thinner and lighter than the traditional optical sensor, and thus easier to integrate into a thin and light mobile electronic device.

FIG. 22 is a simplified schematic diagram illustrating that the optical sensing system 2-100 senses the target 2-F (for example, the fingerprint of a finger) according to some embodiments of the present invention. The optical sensing system 2-100 includes a cover layer 2-101 and an optical sensor 2-200 under the cover layer 2-101. When the target object 2-F contacts the upper surface of the cover plate layer 2-101, the target object 2-F reflects the light emitted by the light source (not shown) to the optical sensor 2-200 to receive the light signal. The target 2-F has various contour features, such as a convex portion 2-F1 and a concave portion 2-F2. Therefore, when the target 2-F contacts the upper surface of the cover layer 2-101, the convex portion 2-F1 of the target 2-F contacts the upper surface of the cover layer 2-101, and the concave portion of the target 2-F 2-F2 is not in contact with the upper surface of the cover plate layer 2-101, that is, there is a gap between the concave portion 2-F2 and the upper surface of the cover plate layer 2-101. Therefore, the intensity of light (such as light 2-L1 and light 2-L2) received by the sensing pixels below the convex portion 2-F1 and the concave portion 2-F2 of the target 2-F will be different. This senses and recognizes the contour features of the target 2-F (for example, fingerprint pattern features).

FIG. 23 is a schematic diagram illustrating an exemplary structure of the optical sensing system 2-100 to sense the target object 2-F according to some embodiments of the present invention. The optical sensing system 2-100 includes a display 2-300 and an optical sensor 2-200 under the display 2-300, wherein the display 2-300 may be an organic light-emitting diode (OLED) Display or Micro LED display. In some embodiments, the display 2-300 in the optical sensing system 2-100 may be used as a light source, and the light emitted from it will illuminate the target 2-F and the target 2- that are in contact with the upper surface of the display 2-300. F then reflects this light to the optical sensor 2-200 disposed under the display 2-300 to sense and recognize the outline feature of the target 2-F (for example, the fingerprint feature of the finger). It is worth noting that the optical sensors 2-200 in the optical sensing system 2-100 can also be used with other types of light sources, so the embodiments of the present invention are not limited thereto.

According to some embodiments of the present invention, the optical sensor 2-200 shown in FIG. 23 includes a substrate 2-201 having a sensing pixel array 2-202, and having a plurality of first openings 2-205 The first light-shielding layer 2-204, the first transparent dielectric layer 2-206, and the microlens layer 2-209. In some embodiments, the plurality of first openings 2-205 of the first light-shielding layer 2-204 provided on the substrate 2-201 exposes the plurality of sensing pixels 2-203 of the sensing pixel array 2-202 . The first transparent dielectric layer 2-206 disposed on the first light-shielding layer 2-204 covers the sensing pixels 2-203 exposed from the plurality of first openings 2-205. The plurality of microlenses 2-210 included in the microlens layer 2-209 are correspondingly disposed on the first transparent medium layer 2-206. In some embodiments, the microlenses 2-210 can be used to guide the light reflected from the target 2-F to enter the optical sensor 2-200 through the first transparent medium layer 2-206 to the sensing pixel 2 -203.

As shown in FIG. 23, light 2-L1, light 2-L2, and light 2-L3 respectively enter the optical sensor 2-200 at different angles, where light 2-L1 and light 2-L3 are incident at oblique angles Light, and light 2-L2 is light that is incident perpendicularly. In an embodiment, the light 2-L1 is incident on one of the microlenses 2-210A of the microlens layer 2-209 and is guided to be exposed from one of the first openings 2-205A of the first light-shielding layer 2-204 Sensing pixel 2-203A, wherein the centerline 2-C1A of the microlens 2-210A and the centerline 2-C2A of the first opening 2-205A have a first lateral offset distance 2-S1. In another embodiment, the light 2-L2 is incident on the other microlens 2-210B of the microlens layer 2-209 and guided to the other first opening 2- from the first light shielding layer 2-204 The sensing pixel 2-203B exposed at 205B, wherein the centerline of the microlens 2-210B overlaps the centerline of the first opening 2-205B. In yet another embodiment, the light 2-L3 is incident on one of the microlens layers 2-209 and the other microlens 2-210C to be guided from the other one of the first light shielding layers 2-204 to the first opening The sensing pixel 2-203C exposed by the hole 2-205C, wherein the center line 2-C1C of the microlens 2-210C and the center line 2-C2C of the first opening 2-205C have a second lateral offset distance 2 -S2.

According to some embodiments of the present invention, the horizontal offset distance between the center line 2-C1 of the microlens 2-210 and the center line 2-C2 of the first opening 2-205 can be adjusted to make the sensing pixel 2-203 Receive light from different angles. In addition, the aperture A1' of the first opening 2-205, the thickness T of the first transparent dielectric layer 2-206, and/or the radius of curvature R of the microlens 2-210 can also be adjusted together so as to sense pixels 2-203 receives light from different field of view angles to achieve high light collection efficiency. Furthermore, in the optical sensor 2-200 provided by the present invention, the configuration and/or other parameters of the microlens 2-210 and the first opening 2-205 with different lateral offset distances (e.g. An aperture A1' of an opening 2-205, a thickness T of the first transparent dielectric layer 2-206, and/or a radius of curvature R) of the microlens 2-210. Through the configuration of the virtual collimating structure in the optical sensor 2-200 provided by the present invention, the areas of the optical sensing area 2-SR and the target contact area 2-CR need not be configured in a one-to-one manner ( For example, the area of the optical sensing area 2-SR may be smaller than the area of the target contact area 2-CR), thereby achieving the technical effect of reducing the sensing area of the optical sensor 2-200 and achieving good image quality.

Figure 24, Figure 25, Figure 26A, and Figure 26B are schematic cross-sectional views of the optical sensor 2-200 at various stages of the manufacturing process according to some embodiments of the present invention. As shown in FIG. 24, in some embodiments, a substrate 2-201 including a sensing pixel array 2-202 is provided, and a first light-shielding layer 2-204 is formed on the substrate 2-201. The substrate may be a semiconductor substrate, such as a silicon substrate. In addition, in some embodiments, the semiconductor substrate may also be an elemental semiconductor (elemental semiconductor), including: germanium; a compound semiconductor (compound semiconductor), including: gallium nitride (gallium nitride), silicon carbide (silicon carbide) ), gallium arsenide, gallium phosphide, indium phosphide, indium arsenide and/or indium antimonide; alloy semiconductor , Including: silicon germanium alloy (SiGe), phosphorous arsenic gallium alloy (GaAsP), arsenic aluminum indium alloy (AlInAs), arsenic aluminum gallium alloy (AlGaAs), arsenic indium gallium alloy (GaInAs), phosphorous indium gallium alloy (GaInP), And/or Indium Gallium Phosphate Arsenic Alloy (GaInAsP), or a combination of the above materials. In other embodiments, the base 2-201 may also be a semiconductor on insulator substrate (semiconductor on insulator) substrate, which may include a bottom plate, a buried oxide layer provided on the bottom plate, and a buried oxide Semiconductor layer on the layer. In addition, the substrate 2-201 may be an N-type or P-type conductivity type.

In some embodiments, the substrate 2-201 may include various isolation components (not shown) to define active regions and electrically isolate the active region elements in/on the substrate 2-201. In some embodiments, the isolation features include shallow trench isolation (STI) features, local oxidation of silicon (LOCOS) features, other suitable isolation features, or a combination of the foregoing.

In some embodiments, the substrate 2-201 may include various P-type doped regions and/or N-type doped regions (not shown) formed by, for example, ion implantation and/or diffusion processes. In some embodiments, the doped regions may form transistors, photodiodes, and other elements. In addition, the substrate 2-201 may also include various active components, passive components, and various conductive components (for example: conductive pads, wires, or vias).

Referring to FIG. 24, in some embodiments, the sensing pixel array 2-202 included in the substrate 2-201 has a plurality of sensing pixels 2-203, and the sensing pixels 2-203 may be connected to a signal processing circuit (Signal processing circuitry) (not shown) connection. In some embodiments, the number of sensing pixels 2-203 of the sensing pixel array 2-202 depends on the area size of the optical sensing region 2-SR. Each sensing pixel 2-203 may include one or more photo detectors. In some embodiments, the photodetector may include a photodiode, wherein the photodiode may include a three-layer photoelectric material of a P-type semiconductor layer, an intrinsic layer, and an N-type semiconductor layer ), the intrinsic layer absorbs light to produce exciton (exciton), and the exciton will be divided into electrons and holes at the junction of the P-type semiconductor layer and the N-type semiconductor layer, thereby generating a current signal. In some embodiments, the photodetector may be a complementary metal-oxide-semiconductor (CMOS) image sensor, such as a front-side illumination (FSI) CMOS image sensor or Back-side illumination (BSI) CMOS image sensor. In some other embodiments, the photodetector may also include a charged coupled device (CCD) sensor, an active sensor, a passive sensor, other suitable sensors, or a combination of the foregoing. In some embodiments, the sensing pixel 2-203 may convert the received optical signal into an electronic signal through a light detector, and process the electronic signal through a signal processing circuit.

In some embodiments, the sensing pixels 2-203 are arranged in an array to form the sensing pixel array 2-202. However, the cross-sectional view shown in FIG. 24 shows only one row of the sensing pixel array 2-202, and is located below the upper surface of the substrate 2-201. It is worth noting that the number and arrangement of the sensing pixels 2-203 included in the sensing pixel array 2-202 shown in FIG. 24 are merely exemplary, and the embodiments of the present invention do not use this Limited. The sensing pixels 2-203 may be an array with any number of rows and columns or other arrangements.

In some embodiments, as shown in FIG. 24, a first light shielding layer 2-204 is formed on the substrate 2-201. The first light-shielding layer 2-204 may include a light-shielding material, which has a light transmittance of less than 1% for a wavelength range below 1200 nanometers.

In some embodiments, the first light-shielding layer 2-204 may include a metal material, such as tungsten (W), chromium (Cr), aluminum (Al), titanium (Ti), or the like. In this embodiment, for example, chemical vapor deposition (CVD), physical vapor deposition (PVD) (eg, vacuum evaporation process), sputtering process ( sputtering process), pulsed laser deposition (PLD), atomic layer deposition (ALD), other suitable deposition processes, or a combination of the foregoing to blanketly form the first light-shielding layer 2-204 On the substrate 2-201. In some embodiments, the first light-shielding layer 2-204 may include a polymer material having light-shielding properties, such as epoxy resin, polyimide, and the like. In this embodiment, the first light-shielding layer 2-204 can be formed on the substrate 2-201 by, for example, spin-coating, chemical vapor deposition (CVD), other suitable methods, or a combination thereof on. The thickness of the first light shielding layer 2-204 formed by the above method is in the range of about 0.3 micrometer (micrometer, µm) to about 5 micrometers, and may be, for example, 2 micrometers. In some embodiments, the selected thickness of the first light-shielding layer 2-204 depends on the light-shielding ability of the material of the first light-shielding layer 2-204, for example, the light-shielding ability of the light-shielding material included in the first light-shielding layer 2-204 is Negative correlation.

Referring to FIG. 25, according to some embodiments of the present invention, a patterning process may be performed on the first light-shielding layer 2-204 formed on the substrate 2-201. The above-mentioned first light-shielding layer 2-204 after the patterning process has a plurality of first openings 2-205, wherein the first openings 2-205 have a first aperture A1'. In some embodiments, the plurality of first openings 2-205 of the first light-shielding layer 2-204 formed on the substrate 2-201 exposes the plurality of sensing pixels 2-203 of the sensing pixel array 2-202 . In some embodiments, the above-mentioned patterning process may include a photolithography process and an etching process. The photolithography process may include, for example: photoresist coating (eg spin coating), soft baking, exposure pattern, post-exposure baking, photoresist development, cleaning and drying (eg hard baking), other suitable processes, or the above combination. The etching process may include, for example, a wet etching process, a dry etching process (such as reactive ion etching (RIE), plasma etching, ion milling), other suitable processes, or a combination of the foregoing. The first pore size A1' formed by the above method is in the range of about 0.3 microns to about 50 microns, and may be, for example, about 4 microns to about 5 microns.

It is worth noting that the first opening 2-205 and the sensing pixels 2-203 shown in FIG. 25 are correspondingly arranged in a one-to-one manner. However, in other embodiments of the invention The first opening 2-205 and the sensing pixel 2-203 can also be correspondingly set in a one-to-many or many-to-one manner. For example, one first opening 2-205 can expose more than two sensing pixels 2-203, or one sensing pixel 2-203 can be exposed from more than two first openings 2-205 ( Not shown). Figure 25 only shows an exemplary arrangement, and the invention is not limited thereto. According to some embodiments of the present invention, by controlling the first aperture A1' of the patterned first light shielding layer 2-204, the range of the angle of view of the incident light can be adjusted. Furthermore, by forming the first light-shielding layer 2-204 on the substrate 2-201, the sensor pixel array 2-202 can be prevented from receiving unnecessary light, and the light incident on the optical sensor 2-200 can be prevented The generated crosstalk further improves the performance of the optical sensor 2-200.

Referring to FIG. 26A, according to some embodiments of the present invention, a first transparent dielectric layer 2-206 may be formed on the first light-shielding layer 2-204 and cover the first opening 2-205 from the first light-shielding layer 2-204 The exposed sensing pixel array 2-202. The first transparent medium layer 2-206 may include a UV-curable material, a thermosetting material, or a combination of the foregoing. For example, the first transparent dielectric layer 2-206 may include, for example, poly (methyl methacrylate (PMMA), polyethylene terephthalate (PET), polyethylene naphthalate Polyethylene naphthalate (PEN) Polycarbonate (PC), perfluorocyclobutyl (PFCB) polymer, polyimide (Polyimide, PI), acrylic resin, epoxy resin (Epoxy resins), polypropylene (Polypropylene, PP), polyethylene (PE), polystyrene (Polystyrene, PS), polyvinyl chloride (Polyvinyl chloride, PVC), other suitable materials, or a combination of the above. In the embodiments, spin-coating, dry film process, casting, bar coating, blade coating, roller coating, and wire coating may be used. Wire bar coating, dip coating, chemical vapor deposition (CVD), other suitable methods, or a combination of the above on the first light-shielding layer 2-204 and its exposed sensing pixel array A first transparent dielectric layer 2-206 is formed on 2-202. In some embodiments, the thickness T of the first transparent dielectric layer 2-206 formed by the above method ranges from about 1 micron to about 100 microns, for example, It is 50 microns. According to some embodiments of the present invention, the first transparent dielectric layer 2-206 formed by the above-mentioned manufacturing method has high yield and good quality. Moreover, by controlling the thickness T of the first transparent dielectric layer 2-206 It can increase or decrease the distance that light deflects after passing through the microlens 2-210, thereby improving the accuracy of the angle of incident light that can be received by the sensing pixel array 2-202.

On the other hand, referring to FIG. 26B, according to other embodiments of the present invention, a first transparent dielectric sub-layer 2-206A may be formed on the sensing pixel array 2-202, and then the first light-shielding layer 2-204 Formed on the first transparent dielectric sub-layer 2-206A, wherein the first transparent dielectric sub-layer 2-206A on the sensing pixel array 2-202 extends from the first opening 2-205 of the first light-shielding layer 2-204 Partly exposed. Next, after the formation of the first light-shielding layer 2-204, the first transparent dielectric sublayer 2-206B is formed on the first light-shielding layer 2-204. By controlling the thickness of the first transparent dielectric sublayer 2-206A, 206B of _{2-T A, 2-T} B to increase or decrease the distance light through the micro-lens offset 2-210 (e.g., increasing the thickness of 2-T _A, 2 -T _B can increase the distance the light deflects after passing through the microlens 2-210), thereby improving the accuracy of the angle of incident light that the sensing pixel array 2-202 can receive.

FIGS. 27A to 27F are schematic cross-sectional views of the optical sensor 2-200 according to some embodiments of the present invention. Specifically, FIGS. 27A to 27F show an optical sensor 2 in which the center line 2-C1 of at least one microlens 2-210 overlaps the center line 2-C2 of the corresponding first opening 2-205 -200 schematic cross-section. As shown in FIG. 27A, in some embodiments, a patterned second light-shielding layer 2-207 is formed on the first transparent dielectric layer 2-206, in which a plurality of second light-shielding layers 2-207 are subjected to a patterning process The second opening 2-208 corresponds to the plurality of sensing pixels 2-203 exposed from the first light-shielding layer 2-204. It is worth noting that the second openings 2-208 and the sensing pixels 2-203 shown in FIG. 27A are correspondingly arranged in a one-to-one manner. However, in other embodiments of the invention The second opening 2-208 and the sensing pixel 2-203 can also be correspondingly set in a one-to-many or many-to-one manner. For example, light entering one second opening 2-208 may be incident on more than two sensing pixels 2-203, or light entering more than two second openings 2-208 may be incident on the same Pixel 2-203 (not shown) is sensed. FIG. 27A only shows an exemplary arrangement, and the invention is not limited thereto.

Furthermore, the material, forming method, thickness, and aperture of the patterned second light-shielding layer 2-207 are approximately the same as those of the first light-shielding layer 2-204, so they will not be repeated here. According to some embodiments of the present invention, by forming the second light-shielding layer 2-207 on the first transparent dielectric layer 2-206, the sensing pixel array 2-202 can be prevented from receiving unnecessary light, and incident light can be prevented The crosstalk generated by the light of the optical sensor 2-200 further improves the signal-to-noise ratio (S/N).

Referring to FIG. 27B, in some embodiments, the plurality of microlenses 2-210 included in the microlens layer 2-209 are correspondingly disposed in the plurality of second openings 2-208 of the second light shielding layer 2-207, The microlenses 2-210 are used to guide the incident light through the first transparent medium layer 2-206 to the sensing pixels 2-203 exposed from the first opening 2-205. In some embodiments, the material of the microlens layer 2-209 may include a transparent photo-curable material or a thermo-curable material, and the forming method thereof is substantially the same as the forming method of the first transparent dielectric layer 2-206, so it will not be repeated here. In these embodiments, the formed microlens layer 2-209 may undergo a patterning process to control the radius of curvature R of the microlens 2-210. In other embodiments, the material of the microlens layer 2-209 may be a photoresist material. In this case, it may include, for example, photoresist coating (eg spin coating), soft baking, exposure pattern, post-exposure baking, photoresist development, cleaning and drying (eg hard baking), other suitable processes, Or the above-mentioned combined photolithography process to form the microlens layer 2-209. In these embodiments, the step of drying (for example, hard baking) in the lithography process can utilize the effect of surface tension to form the hemispherical microlens 2-210, and the required temperature can be adjusted by controlling the heating temperature. The radius of curvature R of the lens 2-210. In some embodiments, the thickness of the formed microlens 2-210 ranges from about 1 micrometer to about 50 micrometers. It is worth noting that the contour of the microlens 2-210 is not limited to a hemispheric shape, and the embodiment of the present invention can also adjust the contour of the microlens 2-210 according to the required incident light angle, for example, it can be aspherical ( aspheric).

Referring to FIG. 27C, in other embodiments, a plurality of microlenses 2-210 included in the microlens layer 2-209 may be directly disposed on the first transparent dielectric layer 2-206 (that is, without the microlens 2- A light-shielding layer between 210), wherein the microlenses 2-210 are used to guide incident light through the first transparent medium layer 2-206 to the sensing pixels 2-203 exposed from the first opening 2-205. In some embodiments, the material and forming method of the microlens layer 2-209 are substantially the same as the material and forming method of the microlens layer 2-209 shown in FIG. 27B, so details are not described here.

Referring to FIG. 27D, the structure shown is similar to the structure shown in FIG. 27C, except that the formation of the microlens layer 2-209 shown in FIG. 27D is continued from the structure shown in FIG. 26B. In these embodiments, the material and forming method of the microlens layer 2-209 are substantially the same as the material and forming method of the microlens layer 2-209 shown in FIGS. 27B and 27C, so details are not described here. In addition, in other embodiments, a second light-shielding layer may be added between the microlenses 2-210 in the structure of FIG. 27D (such as the second light-shielding layer 2-207 of FIG. 27B).

Referring to FIG. 27E, the structure shown in FIG. 27C is similar to the structure shown in FIG. 27C. The difference is that the microlens 2-210 and the sensing pixel 2-203 can be correspondingly arranged in a one-to-one manner. As shown in FIG. 27E, more than two microlenses 2-210 may correspond to a single sensing pixel 2-203 exposed from two first openings 2-205. It is worth noting that the quantity configurations provided in the embodiments of the present invention are only exemplary, and the corresponding ways of the microlens 2-210 and the sensing pixels 2-203 can be adjusted according to the product design. The present invention does not take this as limit.

Refer to FIG. 27F, which is a partially enlarged view of FIG. 27B. According to some embodiments of the present invention, FIG. 27F illustrates the use of controlling the lateral offset distance (ie, the centerline 2-C1 of a microlens 2-210 and the centerline 2-C2 of the corresponding first opening 2-205 The lateral offset distance), the radius of curvature R of the microlens 2-210, the thickness T of the first transparent dielectric layer 2-206, and the aperture A1' of the first opening 2-205 of the first light-shielding layer 2-204, Adjust the allowable angle of incidence of light rays. In some embodiments, as shown in FIG. 27F, by controlling the lateral offset distance to be equal to zero (ie, the centerline 2-C1 of the microlens 2-210 and the centerline 2-C2 of the corresponding first opening 2-205 Overlap) and control the thickness T of the first transparent dielectric layer 2-206 and the aperture A1' of the first opening 2-205, so that the sensing pixels 2-203 can receive incident light from an angular range of θ±θ1. It is understandable that although the partial enlarged views of FIGS. 27C, 27D, and 27E are not shown here, the embodiment shown in FIGS. 27C, 27D, and 27E (that is, without the light shielding layer between the microlenses 2-210 ) The mechanism used to adjust the allowable range of incident angles of light is much the same as the embodiment shown in FIG. 27B (that is, having a light shielding layer between microlenses 2-210), so it will not be repeated here.

According to some embodiments of the present invention, the main angle θ is the angle between the incident light and the upper surface of the sensing pixel 2-203, and the tolerance ±θ1 is the clockwise and counterclockwise deviation from the main angle θ Angle θ1. For example, when the lateral offset distance is equal to zero, the main angle θ can be 90 degrees, and other parameters (such as the thickness T of the first transparent dielectric layer 2-206 and the first opening of the first light-shielding layer 2-204 can be controlled Aperture A1' in 2-205) allows the tolerance ±θ1 to be ±5 degrees. Therefore, the sensing pixels 2-203 in this example can receive light incident at an angle ranging from 85 degrees to 95 degrees. In some embodiments, the main angle θ mainly depends on the lateral offset distance, the tolerance ±θ1 mainly depends on the aperture of the first opening, and the thickness T of the first transparent dielectric layer 2-206 mainly adjusts the sensing pixels The accuracy of the incident angle 2-203 can be received.

FIGS. 28A to 28C are schematic cross-sectional views of the optical sensor 2-200 according to some other embodiments of the present invention. Specifically, FIGS. 28A to 28C show that the centerline 2-C1 including at least one microlens 2-210 and the centerline 2-C2 of the corresponding first opening 2-205 have a lateral offset distance A schematic cross-sectional view of the 2-S optical sensor 2-200. As shown in FIG. 28A, in some embodiments, a patterned second light-shielding layer 2-207 is formed on the first transparent dielectric layer 2-206, wherein a plurality of second light-shielding layers 2-207 in a patterning process are formed The second opening 2-208 corresponds to the plurality of sensing pixels 2-203 exposed from the first light-shielding layer 2-204. It is worth noting that the difference between the embodiment shown in FIG. 28A and the embodiment shown in FIG. 27A is that the second opening 2-208 and the sensing pixel 2-203 in FIG. 28A are Set diagonally to the one-to-one mode. In other words, the centerline 2-C1 of one of the microlenses 2-210 of the microlens layer 2-209 and the centerline 2-C2 of the corresponding first opening 2-205 have a lateral offset distance 2-S (See Figure 28B for collocation). However, in other embodiments of the present invention, the second openings 2-208 and the sensing pixels 2-203 may also be arranged diagonally in a one-to-many or many-to-one manner (not shown). FIG. 28A only shows an exemplary arrangement, and the invention is not limited thereto.

Referring to FIG. 28B, in some embodiments, the plurality of microlenses 2-210 included in the microlens layer 2-209 are disposed in the plurality of second openings 2-208 of the second light shielding layer 2-207, to The diagonal direction corresponds to the sensing pixel 2-203. The microlenses 2-210 are used to guide oblique incident light to penetrate the first transparent medium layer 2-206 and enter the sensing pixels 2-203 exposed from the first opening 2-205. In some embodiments, the material, forming method, and outline of the microlens layer 2-209 shown in FIG. 28B are substantially the same as those of the microlens layer 2-209 shown in FIG. 27B, so they are not repeated here. In other embodiments, the plurality of microlenses 2-210 included in the microlens layer 2-209 can also be directly disposed on the first transparent dielectric layer 2-206 (ie, there is no light shielding between the microlenses 2-210 Layer) (not shown), corresponding to the sensing pixels 2-203 in an oblique direction. The microlenses 2-210 are used to guide oblique incident light to penetrate the first transparent dielectric layer 2-206 and enter the sensing pixels 2-203 under the first opening 2-205. In these embodiments, the material and forming method of the microlens layer 2-209 are substantially the same as the material and forming method of the microlens layer 2-209 shown in FIG. 27C, so they will not be repeated here.

Refer to FIG. 28C, which is a partially enlarged view of FIG. 28B. According to some embodiments of the present invention, FIG. 28C illustrates the use of the control lateral offset distance 2-S, the radius of curvature R of the microlens 2-210, the thickness T of the first transparent dielectric layer 2-206, and the first light-shielding layer The aperture A1' of the first opening 2-205 of 2-204 adjusts the allowable angle of incidence of light. In some embodiments, as shown in FIG. 28C, by controlling the lateral offset distance 2-S (ie, the centerline 2-C1 of at least one microlens 2-210 of the microlens layer 2-209 and the corresponding third A lateral offset distance of the centerline 2-C2 of an opening 2-205) and control the thickness T of the first transparent dielectric layer 2-206 and the aperture A1' of the first opening 2-205, so that the pixel 2 is sensed -203 can receive incident light from the angular range of θ'±θ2.

According to some embodiments of the present invention, the main angle θ'is the angle between the incident light and the upper surface of the sensing pixel 2-203, and the tolerance ± θ2 is offset from the main angle θ'in clockwise and counterclockwise directions移的角θ2. For example, the lateral offset distance can be controlled so that the main angle θ′ can be 45 degrees, and other parameters (such as the thickness T of the first transparent dielectric layer 2-206 and the first opening of the first light-shielding layer 2-204 can be controlled The hole diameter A1' of the hole 2-205 makes the tolerance ±θ2 ±5 degrees. Therefore, the sensing pixels 2-203 in this example can receive light incident at an angle ranging from 40 degrees to 50 degrees. In some embodiments, the main angle θ′ mainly depends on the lateral offset distance 2-S, the tolerance ±θ2 mainly depends on the aperture A1′ of the first opening, and the thickness T of the first transparent dielectric layer 2-206 mainly The accuracy of the incident angle that the sensing pixels 2-203 can receive can be adjusted. It is worth noting that the angle ranges provided by the embodiments of the present invention are only exemplary, and the present invention is not limited thereto. The embodiments of the present invention may adjust the above parameters according to the control structure as needed.

According to the embodiments shown in FIGS. 27A to 27F and 28A to 28C, in the optical sensor 2-200 provided by the present invention, microlenses 2 with different lateral offset distances can be integrated -210 and the configuration of the first opening 2-205 and/or other parameters (such as the aperture A1' of the first opening 2-205, the thickness T of the first transparent dielectric layer 2-206, and/or the microlens 2- The arrangement of the radius of curvature 210 of 210), for example, the structure shown in FIGS. 27B and 28B can be integrated into the optical sensor 2-200. Through the configuration of the optical sensor 2-200 provided by the present invention, the areas of the optical sensing area 2-SR and the target contact area 2-CR need not be configured in a one-to-one manner (such as optical sensing The area of the measurement area 2-SR may be smaller than the area of the target contact area 2-CR) (as shown in FIG. 23), and the technical effect of reducing the area of the optical sensor 2-200 and achieving good image quality is achieved. It can be understood that the plurality of microlenses 2-210 may have the same or different radius of curvature R, and the first opening 2-205 may also have the same or different aperture A1'.

Figures 29 to 32 are some other embodiments according to the present invention, for example based on the structures shown in Figures 27B, 27C, 27D, 27E, and 28B, showing the inclusion of additional structures A schematic cross-sectional view of the optical sensor 2-200. Referring to FIG. 29, according to some other embodiments of the present invention, a protective layer 2-800 that compliantly covers the microlens layer 2-209 and the second light shielding layer 2-207 is shown. It is understandable that the protective layer 2-800 can also be conformally formed on the structure shown in FIG. 27C, FIG. 27D, and FIG. 27E, in which there is no light shielding layer between the microlenses 2-210, so the protective layer 2-800 directly contacts the first transparent dielectric layer 2-206 (not shown) under the microlens layer 2-209. In some embodiments, the protective layer 2-800 may be formed of silicon dioxide, and may be plasma-enhanced CVD (PECVD), remote plasma enhanced chemical vapor deposition (remote plasma- enhanced CVD (RPECVD), other similar methods, or a combination of the above to deposit silicon dioxide on the microlens layer 2-209 and the second light shielding layer 2-207. The protective layer 2-800 formed of silicon dioxide does not affect the ability of the microlens layer 2-209 to guide light. Furthermore, the protective layer 2-800 can effectively protect the microlens layer 2-209 to prevent the microlens layer 2-209 from being damaged during the subsequent packaging process.

Referring to FIG. 30, according to some other embodiments of the present invention, a filter layer 900 disposed between a first transparent dielectric layer 2-206 and a second light-shielding layer 2-207 and/or microlens 2-210 is shown . In some embodiments, the partial structure of the optical sensor 2-200 formed in FIG. 26A may be continued to form the structure shown in FIG. 30. In other embodiments, the partial structure of the optical sensor 2-200 formed in FIG. 26B may be continued to form the filter layer 2-900 (not shown) as shown in FIG. 30. After forming the first transparent dielectric layer 2-206 (or the first transparent dielectric sublayer 2-206A), a filter layer 2-900 may be formed on the first transparent dielectric layer 2-206, and the filter layer is formed After 2-900, a second light-shielding layer 2-207 and a microlens layer 2-209 are formed. As mentioned above, in other embodiments, the second light shielding layer 2-207 may not be provided.

In addition, in some embodiments, the filter layer 2-900 may be an infrared cut filter (IRC). Visible light has a high transmittance for this infrared filter layer, and infrared light has a low transmittance for it. In some embodiments, a filter layer 2-900 (such as an infrared filter layer) may be provided between the first transparent dielectric layer 2-206 and the second light-shielding layer 2-207 and/or the microlens 2-210, Correct the color shift phenomenon of the optical sensor 2-200 and reduce the interference of infrared rays.

Referring to FIG. 31A, according to some other embodiments of the present invention, a second transparent dielectric layer 2-1100 disposed between a first transparent dielectric layer 2-206 and a second light shielding layer 2-207, and a A patterned third light-shielding layer 2-100 between the first transparent dielectric layer 2-206 and the second transparent dielectric layer 2-1100. In some embodiments, the partial structure of the optical sensor 2-200 formed in FIG. 26A may be continued to form the structure shown in FIG. 31A. On the other hand, referring to FIG. 31B, the structure shown is similar to the structure shown in FIG. 31A, the difference is that the structure shown in FIG. 31B is the multiple microlenses 2-210 included in the microlens layer 2-209 It is directly disposed on the first transparent medium layer 2-206 (that is, it does not have a light shielding layer between the microlenses 2-210).

After forming the first transparent dielectric layer 2-206, a patterned third light-shielding layer 2-100 can be formed over the first transparent dielectric layer 2-206. In some embodiments, the material, forming method, thickness, and aperture of the patterned third light shielding layer 2-100 are substantially the same as the above-mentioned patterned first light shielding layer 2-204 and patterned second light shielding layer 2-207, So I won't repeat them here. In some embodiments, the material and forming method of the second transparent dielectric layer 2-001 are substantially the same as the above-mentioned first transparent dielectric layer 2-206, so they will not be repeated here. The thickness T of the second transparent dielectric layer 2-1000 is in the range of about 1 micrometer to about 100 micrometers, for example, 30 micrometers.

According to some embodiments of the present invention, by forming the third light shielding layer 2-1002 on the first transparent dielectric layer 2-206, the sensing pixel array 2-202 can be prevented from receiving unnecessary light, and incident light can be prevented The crosstalk generated by the light from the optical sensor 2-200 further improves the signal-to-noise ratio (S/N). For example, as shown in FIGS. 31A and 31B, the centerline 2-C2 of the at least one first opening 2-205 and the centerline of the corresponding third opening 2-1003 in the third light shielding layer 2-1002 The center line 2-C1 of 2-C3 and the corresponding microlens 2-210 overlap. In FIGS. 31A and 31B, the light 2-L1 is incident light that can be received by the sensing pixel 2-203, and the light 2-L2 is the incident angle from the allowed incident on the sensing pixel 2-203 Light outside the range. Therefore, the light 2-L2 will be absorbed or blocked by the third light-shielding layer 2-1002 and cannot enter the sensing pixel 2-203.

Referring to FIG. 32, the structure shown in FIG. 32 is similar to the structure shown in FIG. 31A. The difference between FIG. 32 and FIG. 31A is that the center line 2-C2 of at least one first opening 2-205 and one of the third light-shielding layers 2-100 correspond to the center line 2- of the third opening 2-1003 C3 and the center line 2-C1 of the corresponding microlens 2-210 do not overlap. In Figure 32, the light 2-L1 is incident light that can be received by the sensing pixel 2-203, and the light 2-L2 is from outside the allowable incident angle to the sensing pixel 2-203. Light. Therefore, the light 2-L2 will be absorbed or blocked by the third light-shielding layer 2-1002 and cannot enter the sensing pixel 2-203. According to some embodiments of the present invention, the structure shown in FIG. 32 may facilitate sensing pixels 2-203 to receive light incident at an oblique angle. Furthermore, by forming the third light-shielding layer 2-1002 on the first transparent dielectric layer 2-206, the sensing pixel array 2-202 can be prevented from receiving unnecessary light, and the incident to the optical sensor 2 can be prevented -200 crosstalk produced by the light, thereby improving the signal-to-noise ratio (S/N).

It is worth noting that although various additional structures included in the optical sensor 2-200 shown in FIGS. 29 to 32 are described in different embodiments, these additional structures can be matched with each other and viewed Need to be integrated into a single optical sensor 2-200.

FIG. 33 is a schematic cross-sectional view of an optical sensing system 2-100 including an exemplary structure of a display 2-300 according to some embodiments of the present invention. In some embodiments, the display 2-300 may include an organic light emitting diode display or a miniature light emitting diode display. It is worth noting that, in order to briefly describe the embodiments of the present invention and highlight its features, the packaging structure of the optical sensor 2-200 and the display 2-300 shown in FIG. 33 will be shown in FIGS. 34 and 35. It is described in detail in the illustrated embodiment. As shown in FIG. 33, the display 2-300 includes a first light-transmitting material 2-201, a thin-film transistor (TFT) layer 2-1202 on the first light-transmitting material 2-201, and a film The cathode layer 2-1203 on the transistor layer 2-1202, the light emitting layer 2-1204 on the cathode layer 2-1203, the anode layer 2-1205 on the light emitting layer 2-1204, and the anode layer 2-1205 on the anode layer 2-1205 The second light-transmitting material 2-1206, the polarizing plate 2-1207 on the second light-transmitting material 2-1206, the adhesive layer 2-1208 on the polarizing plate 2-1207, and the adhesive layer 2-1208的光盖盖2-1209. In some embodiments, the display 2-300 further includes an aperture 2-1210, which is disposed in the cathode layer 2-1203 and above the thin film transistor layer 2-1202. Through the setting of the aperture 2-1210, the light emitted from the light emitting layer 2-1204 can be reflected by the target 2-F and enter the optical sensor 2-200 without being blocked by the cathode layer 2-1203. On the other hand, the cathode layer 2-1203 formed of a transparent electrode material may also be used directly, so that the light reflected by the target 2-F enters the optical sensor 2-200 without being blocked. Of course, the structure of the OLED display described above, for example, may increase or decrease or change the material layer as the technology evolves. It should be noted that the concept of the present invention does not change accordingly.

In some embodiments, the first light-transmitting material 2-201, the second light-transmitting material 2-1206, and the light-transmitting cover plate 2-1209 may include, for example, glass, quartz, sapphire, or transparent polymer Objects, etc., which allow light to pass through. In some embodiments, the cathode layer 2-1203 and the anode layer 2-1205 may be transparent electrode materials (for example, indium tin oxide) so that they are incident on the optical sensor 2-200 after being reflected by the target 2-F The light will not be blocked. In some embodiments, according to the type of the display 2-300, the light emitting layer 2-1204 may include an organic light emitting layer or a micro light emitting diode layer. In the optical sensing system 2-100 provided by the present invention, the light-emitting layer 2-1204 in the display 2-300 can be used as a light source, and the light emitted from it will illuminate the target that is in contact with the upper surface of the light-transmitting cover 2-1209 Object 2-F, after being reflected by the target object 2-F, the light will pass through the display 2-300 and enter the optical sensor 2-200.

FIGS. 34 to 35 are schematic cross-sectional views of an optical sensing system 2-100 including different packaging structures according to some other embodiments of the present invention. However, in order to concisely describe the embodiments of the present invention and highlight its features, the specific structure of the display 2-300 is not shown in FIGS. 34 to 35. In some embodiments, the optical sensing system 2-100 provided by the present invention may be formed by a chip on board (COB) process. Specifically, referring to FIG. 34, in some embodiments, the optical sensor 2-200 is bonded to the circuit board 2-1303, and the substrate 2-201 of the optical sensor 2-200 is connected through the wire 2-1302 The conductive pad 2-1301 in is connected to the circuit board 2-1303. Next, the adhesive material is applied on the circuit board 2-1303 by the dispensing process and surrounds the optical sensor 2-200 to form the frame 2-1305, and the optical sensor 2-200 and the underside are formed through the frame 2-1305 The circuit board 2-1303 is adhered to the lower surface of the display 2-300 (for example, the first light-transmitting material 2-201 of the display 2-300). In some embodiments, the wire 2-1302 may be formed of aluminum, copper, gold, other suitable conductive materials, the above alloy, or a combination of the above. In some embodiments, the adhesive material forming the frame may be a photo-curable material, a thermal-curable material, or other similar materials. In some embodiments, the circuit board 2-1303 may be a flexible printed circuit (FPC), and the flexible circuit board 2-1303 may be disposed on the reinforcement board 2-1304 (for example, a metal reinforcement board) .

In other embodiments, as shown in FIG. 35, an embodiment of the present invention also provides another packaging structure. In some embodiments, after the optical sensor 2-200 is bonded to the circuit board 2-1303, a frame 2-401 (such as a plastic frame) is disposed on the circuit board 2-1303 and surrounds the optical sensor 2-200 , Coat the adhesive material 2-1402 in the frame 2-1401 and surround the optical sensor 2-200, and adhere the optical sensor 2-200 and the circuit board 2-1303 underneath through the adhesive layer 2-1403 It reaches the lower surface of the display 2-300 (for example, the first light-transmitting material 2-201 of the display 2-300).

In the exemplary package structure shown in FIGS. 34 and 35, the display 2-300 may include an organic light emitting diode display or a micro light emitting diode display. According to the configuration of the optical sensor 2-200 disposed under the display 2-300 included in some embodiments of the present invention, the display 2-300 can be used as a light source, and the light emitted by the display 2-300 can be irradiated on the display 2-300. The target 2-F that is in contact with the surface will be reflected by the target 2-F and enter the optical sensor 2-200. It is worth noting that the optical sensors 2-200 in the optical sensing system 2-100 can also be used with other types of light sources, so the embodiments of the present invention are not limited thereto. Furthermore, the optical sensing system 2-100 provided by some embodiments of the present invention can effectively improve the reliability through the package structure described above.

FIG. 36 is a schematic diagram showing that the optical sensing system 2-100 receives incident light 2-L1, 2-L2, 2-L3 at different angles according to some embodiments of the present invention. In some embodiments, as shown in FIG. 36, when the target 2-F (eg, fingerprint) contacts the light-transmitting cover 2-1209 of the display 2-300, the light emitted by the light-emitting layer 2-1204 will be The target 2-F is reflected and enters at different angles (eg, light 2-L1, 2-L2, 2-L3) to the optical sensor 2-200 disposed below the display 2-300. Among them, light 2-L1 and light 2-L3 are light incident at an oblique angle, and light 2-L2 is light incident perpendicularly. In the optical sensing system 2-100 provided by the present invention, the configuration and/or other parameters of the microlens 2-210 and the first opening 2-205 with different lateral offset distances can be integrated (such as the first opening The arrangement of the aperture A1' of 2-205, the thickness T of the first transparent dielectric layer 2-206, and/or the radius of curvature R of the microlens 2-210. Through the configuration of the optical sensor 2-200 provided by the present invention, the areas of the optical sensing area 2-SR and the target contact area 2-CR need not be configured in a one-to-one manner (such as optical sensing The area of the measurement area 2-SR may be smaller than the area of the target contact area 2-CR), and the technical effect of reducing the area of the optical sensor 2-200 and achieving good image quality is achieved. Moreover, the display 2-300 included in the optical sensing system 2-100 can provide the required light source, so no additional independent light source is required.

In summary, the optical sensing system provided by the embodiments of the present invention includes a design that uses a display (such as a screen panel of a mobile device) as a light source. Furthermore, in the optical sensing system, the configuration and/or other parameters of the first openings of the microlens layer and the first light-shielding layer included in the optical sensor with different lateral offset distances (such as the first opening The configuration of the aperture, the thickness of the first transparent medium layer, and/or the radius of curvature of the microlens) can enable the sensing pixels to receive light from different incident angle ranges. According to this, light incident from a specific range of field angles can be incident on the sensing pixels. In addition, since the optical sensing system provided by the present invention can receive light incident at an oblique angle, the area of the optical sensing area 2-SR can be smaller than the area of the target contact area 2-CR, and the reduction of the optical sensor's Area and achieve the technical effect of good image quality.

FIGS. 37 and 38 are schematic cross-sectional views illustrating optical sensors 2-200' at various stages of the manufacturing process according to other embodiments of the present invention. FIGS. 39A and 39B are schematic cross-sectional views of optical sensors 2-200' according to other embodiments of the present invention. FIG. 40 is a partially enlarged schematic diagram showing a cross section of the arrangement of microlenses and sensing pixels according to other embodiments of the present invention. The optical sensor 2-200' may be similar to the optical sensor of the above-mentioned embodiment (for example: the optical sensor 2-200), and the optical sensor 2-200' and the optical sensor of the above-mentioned embodiment The differences will be discussed in the following paragraphs.

Referring to FIG. 37, in some embodiments, the sensing pixel array 2-202 included in the substrate 2-201 has a plurality of sensing pixels 2-203, and two adjacent sensing pixels 2-203 A circuit structure 2-1601, such as a memory device or signal processing circuitry, may be provided between them. In some embodiments, the number of sensing pixels 2-203 of the sensing pixel array 2-202 depends on the area size of the optical sensing region 2-SR. The width P of the sensing pixels 2-203 depends on the design requirements of the optical sensing system, and can be designed in the range of 3 microns to 10 microns.

It is worth noting that the number and arrangement of the sensing pixels 2-203 included in the sensing pixel array 2-202 shown in FIG. 37 are substantially the same as those shown in FIG. 24. , So I won’t go into details here.

Referring next to FIG. 38, according to other embodiments of the present invention, a first transparent dielectric layer 2-206 may be directly formed on the substrate 2-201 and cover the sensing pixel array 2-202. In this embodiment, the sensing pixel array 2-202 is not covered by the light shielding layer. The material and forming method of the first transparent dielectric layer 2-206 are substantially the same as the material and forming method of the first transparent dielectric layer 2-206 shown in FIG. 26A, so they will not be repeated here. According to other embodiments of the present invention, the material selection of the first transparent dielectric layer 2-206 can be determined according to the required refractive index. In some embodiments, the thickness T of the first transparent dielectric layer 2-206 formed by the above method is in the range of about 1 micrometer to about 100 micrometers, for example, 50 micrometers. By controlling the thickness T of the first transparent dielectric layer 2-206, the distance by which the light deflects after passing through the microlens 2-210 can be increased or decreased, thereby improving the accuracy of the angle of incident light that the sensing pixel array 2-202 can receive .

Next, referring to FIG. 39A, the optical sensor 2-200′ including the center line 2-C1 of at least one microlens 2-210 and the center line 2-C2 of the corresponding sensing pixel 2-203 overlapped is shown. Sectional schematic. In these embodiments, the microlenses 2-210 included in the microlens layer 2-209 are correspondingly disposed in the openings of the second light shielding layer 2-207, where the microlenses 2-210 are used to guide The projected light penetrates the first transparent medium layer 2-206 to the sensing pixel 2-203. In these embodiments, the formed microlens layer 2-209 may undergo a patterning process to control the focal length f of the microlens 2-210. In this embodiment, the diameter D of the microlens 2-210 can be adjusted in the range of 10 microns to 50 microns, such as 30 microns, according to the imaging resolution. According to some embodiments of the present invention, the ratio of the width P of the sensing pixel 2-203 to the diameter D of the microlens 2-210 can be adjusted in the range of 0.06 to 1, so as to effectively improve the resolution of the image acquisition. In some embodiments, the material and forming method of the microlens layer 2-209 are substantially the same as those of the microlens layer 2-209 shown in FIG. 27B, so they are not repeated here. Furthermore, in some embodiments, the optical sensor 2-200' may not have the second light-shielding layer 2-207. That is, there is no light shielding layer between the microlenses 2-210.

Next, referring to FIG. 39B, the difference between the embodiment shown in FIG. 39A and the embodiment shown in FIG. 39A is that the microlens 2-210 and the sensing pixel 2-203 in FIG. 39B are one-to-one The mode corresponds to the diagonal setting. In other words, the centerline 2-C1 of one of the microlenses 2-210 of the microlens layer 2-209 and the centerline 2-C2 of the corresponding sensing pixel 2-203 have a lateral offset distance 2-S . However, in other embodiments of the present invention, the microlens 2-210 and the sensing pixel 2-203 can also be arranged diagonally in a one-to-many or many-to-one manner (not shown). FIG. 39B only shows an exemplary arrangement, and the invention is not limited thereto.

According to the embodiment shown in FIGS. 39A to 39B, the optical sensor 2-200' includes a substrate 2-201, and the sensing pixel array 2-202 is disposed on the substrate 2-201, wherein the sensing image The pixel array 2-202 includes a plurality of sensing pixels 203. The first transparent dielectric layer 2-206 is located above the sensing pixel array 2-202. The microlens layer 2-209 is located above the first transparent medium layer 2-206 and includes a plurality of microlenses 2-210. The micro lens 2-210 guides the incident light to penetrate the first transparent medium layer 2-206 to the sensing pixel 2-203. In some embodiments, the width P of the sensing pixel 203 is between microns and 10 microns, and the diameter D of the microlens 2-210 is between 10 microns and 50 microns. In addition, the second light shielding layer 2-207 is disposed above the first transparent dielectric layer 2-206, and the plurality of microlenses 2-210 of the microlens layer 2-209 are correspondingly disposed on the second light shielding layer 2-207 Multiple openings. As mentioned above, in other embodiments, the optical sensor 2-200' may not have the second light shielding layer 2-207. That is, there is no light shielding layer between the microlenses 2-210.

In the optical sensor 2-200' provided by the present invention, the configuration and/or other parameters of the microlens 2-210 and the sensing pixel 2-203 with different lateral offset distances can be integrated (such as the sensing image The dimensions of the element 2-203 (e.g., width P), the thickness T of the first transparent dielectric layer 2-206, and/or the focal length f of the microlens 2-210 can be configured, for example, as shown in FIGS. 39A and 39B. The structure shown is integrated in the optical sensor 2-200'. Through the configuration of the optical sensor 2-200' provided by the present invention, the areas of the optical sensing area 2-SR and the target contact area 2-CR need not be configured in a one-to-one manner (such as optical The area of the sensing area 2-SR may be smaller than the area of the target contact area 2-CR), and the technical effect of reducing the area of the optical sensor 2-200 and achieving good image quality is achieved.

Next, refer to FIG. 40, which is a partially enlarged view of FIG. 39A. According to some embodiments of the present invention, FIG. 40 shows the lateral offset distance 2- of the center line 2-C1 of the control microlens 2-210 and the center line 2-C2 of the corresponding sensing pixel 2-203 S, the width P of the sensing pixel 2-203, the refractive index n of the first transparent dielectric layer 2-206, the thickness T of the first transparent dielectric layer 2-206, the focal length f of the microlens 2-210, the microlens 2 The diameter D of -210 adjusts the range of allowable light incident angle (for example, light incident at an oblique angle). Specifically, if the aforementioned parameters and the incident angle θ _i of the incident light L and the refraction angle θ _{r of the} incident light L conform to the following relationship: sin θ _i = n * sin θ _r (equation 1) f = ((D /2) ² +T ² ) ^1/2 (Formula 2) P/2 = f * tanθ _r (Formula 3),

Then, the microlens 2-210 can guide the incident light L to pass through the first transparent medium layer 2-206 and then directly enter the sensing pixel 2-203 having a width P conforming to the above relationship, so as to achieve no additional In the case of a light-shielding layer, the sensing pixels 2-203 can receive light incident from a specific range of field angles. Furthermore, the thickness of the optical sensor 2-200' can be effectively reduced by the above configuration.

It is worth noting that the various additional structures included in the optical sensor 2-200 shown in FIGS. 29 and 30 (such as the protective layer 800 and the filter layer 900) can also be applied to the optical sensor 2-200' (not shown), and these additional structures can be matched with each other and integrated into a single optical sensor 2-200' as needed. Furthermore, the optical sensor 2-200' can also be combined with the display 2-300 shown in FIG. 33 and the package structure (not shown) shown in FIG. 34 and FIG. 35, which is not repeated here Repeat. By disposing the optical sensor 2-200' included in the above embodiment of the present invention under the display, the display can be used as a light source, and the light emitted by it will illuminate a target close to or in contact with the upper surface of the display, This light will be reflected by the target and enter the optical sensor 2-200'. It is worth noting that the optical sensor 2-200' can also be used with other types of light sources, for example, an independent light source (for example, an LED light source) disposed on the side or diagonally above the optical sensor 2-200'. The embodiments of the invention are not limited thereto. Furthermore, the combination of the optical sensor 2-200' and the display provided by some embodiments of the present invention can effectively improve the reliability through the above-mentioned packaging structure.

In summary, the embodiments of the present invention can achieve the sensing pixels can be achieved without the additional light-shielding layer through the configuration of the micro lens and the sensing pixels with a smaller size that meet the above relationship Receiving light incident from a specific range of field angles and reducing the thickness of the optical sensor. By arranging the circuit structure between sensing pixels with a smaller size, the integration density of the optical sensor can be effectively improved. The optical sensor provided by the embodiments of the present invention may use a display (such as a screen panel of a mobile device) as a light source design. Furthermore, the configuration and/or other parameters of the microlens layer with different lateral offset distances and sensing pixels included in the optical sensor (such as the size of the sensing pixel, the refractive index of the first transparent medium layer, The thickness of the first transparent medium layer, the focal length of the microlens, and the diameter of the microlens) can make the sensing pixels receive light from different incident angle ranges. According to this, light incident from a specific range of field angles can be incident on the sensing pixels. Since the optical sensing system provided by the present invention can receive light incident at an oblique angle, the area of the optical sensing area 2-SR can be smaller than the area of the target contact area 2-CR, and the area of the optical sensor can be reduced. Achieve the technical effect of good image quality.

It is worth noting that although the exemplary embodiments disclosed in the examples discussed here (such as the first and second embodiments) relate to fingerprint sensing systems applied to mobile devices, the technology provided by the present invention may also It is applied to other forms of sensors, not just sensor devices used to detect fingerprints. For example, it can also be used to detect epidermis/dermis fingerprint images, subcutaneous veins images, and to measure other biometric images or information (such as blood oxygen level (blood oxygen level), heartbeat (heartbeat) ) Etc.), not limited to the scope disclosed in the above embodiment.

Several embodiments are summarized above, so that those skilled in the art to which the present invention pertains can better understand the viewpoints of the embodiments of the present invention. Those skilled in the art of the present invention should understand that they can design or modify other processes and structures based on the embodiments of the present invention to achieve the same purposes and/or advantages as the embodiments described herein. Those skilled in the art to which the present invention belongs should also understand that such equivalent processes and structures do not depart from the concept and scope of the present invention, and they can do various things without departing from the concept and scope of the present invention. Various changes, substitutions and replacements.

1-ANG‧‧‧Angle 1-ANG2‧‧‧Second Angle 1-CR‧‧‧ Area of the object to be measured 1-CV1‧‧‧curve 1-CV2‧‧‧curve 1-d, H, h‧‧‧ Distance 1-F‧‧‧Object 1-G‧‧‧Gap 1-L1‧‧‧ Forward incident light 1-L1'‧‧‧Direct incident light 1-L2‧‧‧ Oblique incident light 1-L3 ‧‧‧ Second oblique incident light 1-L4‧‧‧ Third oblique incident light 1-L5‧‧‧ Fourth oblique incident light 1-OA‧‧‧Optical axis 1-OAA‧‧‧Optical axis 1 -OAM‧‧‧Target optical axis 1-SR‧‧‧Area 1-203, 1-203', 1-203M‧‧‧ Sensing pixel 1-200‧‧‧Optical sensor 1-201‧‧‧ Substrate 1-202‧‧‧Dielectric layer group 1-204‧‧‧First light-shielding layer 1-204A‧‧‧First light hole 1-205‧‧‧Protection layer 1-206‧‧‧Optical filter layer 1- 207‧‧‧First transparent dielectric layer 1-208‧‧‧Second light-shielding layer 1-208A‧‧‧Second light hole 1-209‧‧‧Second transparent dielectric layer 1-210‧‧‧Microlens 1- 210A‧‧‧Offset microlens 1-210B‧‧‧Bottom surface 1-210M‧‧‧Target microlens 1-211‧‧‧Lens shading layer 1-300‧‧‧Display 1-300B ~lower surface 1-400‧ ‧‧Frame 1-410‧‧‧Accommodation slot 1-420‧‧‧Accommodation bottom 1-500‧‧‧Battery 1-600‧‧‧Optical sensing system 1-610‧‧‧Base 1-900‧‧ ‧Optical filter board 1-1300‧‧‧Optical sensor module 1-1301‧‧‧Carrying hard version 1-1302‧‧‧Flexible circuit board 1-1303‧‧‧Wire bonding 1-1305‧‧‧Frame 1-1306‧‧‧Sealing layer A1, A2‧‧‧Aperture X‧‧‧Pitch 2-100‧‧‧Optical sensing system 2-101‧‧‧Cover layer 2-200, 2-200'‧‧ ‧Optical sensor 2-300‧‧‧Display 2-201‧‧‧Substrate 2-202‧‧‧Sensor pixel array 2-203, 2-203A, 2-203B, 2-203C‧‧‧ Sensing Pixel 2-204‧‧‧First light-shielding layer 2-205, 2-205A, 2-205B, 2-205C‧‧‧First opening 2-206‧‧‧First transparent dielectric layer 2-206A, 2 -206B‧‧‧First transparent dielectric sublayer 2-207‧‧‧Second light shielding layer 2-208‧‧‧Second opening 2-209‧‧‧Microlens layer 2-210, 2-210A, 2- 210B, 2-210C‧‧‧Microlens 2-800‧‧‧Protection layer 2-900‧‧‧Filter layer 2-1001‧‧‧Second transparent dielectric layer 2-1002‧‧‧ Third shading layer 2- 1003‧‧‧ Third opening 2-1201‧‧‧First light-transmitting material 2-1202‧‧‧Thin film transistor layer 2-1203‧‧‧Negative Polar layer 2-1204‧‧‧Light emitting layer 2-1205‧‧‧Anode layer 2-1206‧‧‧Second translucent material 2-1207‧‧‧Polarizing plate 2-1208‧‧‧Adhesive layer 2-1209‧ ‧‧Translucent cover plate 2-1210‧‧‧Aperture 2-1301‧‧‧Conductive pad 2-1302‧‧‧Wire 2-1303‧‧‧ Circuit board 2-1304‧‧‧Reinforcement plate 2-1305, 2- 1401‧‧‧Frame 2-1402 ‧‧‧ Adhesive material 2-1403 ‧‧‧ Adhesive layer 2-1601 ‧‧‧ Circuit structure 2-C, 2-C1, 2-C2, 2-C3, 2-C1A , 2-C2A, 2-C1C, 2-C2C ‧‧‧ center line 2-CR‧‧‧ target contact area 2-F‧‧‧ target 2-F1‧‧‧ convex part 2-F2‧‧‧ concave part 2-L1,2-L2,2-L3‧‧‧ ray 2-S, 2-S1,2 S2‧‧‧ - 2-SR‧‧‧ laterally offset from the optical sensing region 2-T _A, 2- T _B ‧‧‧thickness A1'‧‧‧ first aperture A2'‧‧‧second aperture D‧‧‧diameter f‧‧‧ focal length L‧‧‧incident light n‧‧‧refractive index P‧‧‧width R ‧‧‧ Radius of curvature T‧‧‧ Thickness θ, θ'‧‧‧‧ Main angle θ1, θ2‧‧‧ Allowance θ _i ‧‧‧ Angle of incidence θ _r ‧‧‧ Refraction angle

The embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings of the specification. It should be noted that according to standard practices in the industry, various features are not drawn to scale and are used for illustration only. In fact, the size of the element may be arbitrarily enlarged or reduced to clearly show the features of the embodiments of the present invention. FIG. 1 shows a schematic cross-sectional view of an optical sensing system according to a first embodiment of the invention. FIG. 2 shows a schematic cross-sectional view of the optical sensor according to the first embodiment of the present invention. FIG. 3 shows the characteristic curve of the optical sensor according to the first embodiment of the present invention. FIG. 4 shows a schematic cross-sectional view of an optical sensing system according to a second embodiment of the invention. FIG. 5 shows a schematic diagram of the working state of the optical sensor according to the first embodiment of the present invention. FIG. 6 shows a schematic cross-sectional view of an optical sensor according to a third embodiment of the invention. FIG. 7 shows the characteristic curve of the optical sensor according to the third embodiment of the present invention. FIG. 8 is a schematic diagram showing another working state of the optical sensor according to the first embodiment of the present invention. FIG. 9 shows a schematic cross-sectional view of an optical sensor according to a fourth embodiment of the invention. Figure 10 shows the characteristic curve of the optical sensor of Figure 8. Figure 11 shows the characteristic curve of the optical sensor of Figure 9. FIG. 12 shows a partial cross-sectional view of the working principle of the optical sensor according to the fourth embodiment of the invention. FIG. 13 shows a schematic cross-sectional view of an optical sensor according to a fifth embodiment of the invention. FIG. 14 shows a schematic partial cross-sectional view of an optical sensor according to a sixth embodiment of the invention. Figure 15 shows the characteristic curve of the optical sensor of Figure 14. 16A and 16B show partial cross-sectional views of two examples of the optical sensor according to the seventh embodiment of the invention. FIGS. 17A to 17E show schematic cross-sectional views of the steps of the method for manufacturing the optical sensor according to the eighth embodiment of the present invention. 18A to 18F show schematic cross-sectional views of the steps of the method for manufacturing the optical sensor according to the ninth embodiment of the present invention. FIGS. 19A to 19F are schematic cross-sectional views of the steps of the method for manufacturing the optical sensor according to the tenth embodiment of the present invention. FIG. 20 shows a schematic cross-sectional view of the structure of an optical sensor according to a modification of the eighth embodiment of the present invention. FIG. 21 shows a schematic cross-sectional view of the structure of an optical sensor according to a modification of the tenth embodiment of the present invention. FIG. 22 is a schematic diagram illustrating that the optical sensing system senses a target according to some embodiments of the present invention. FIG. 23 is a schematic diagram illustrating an exemplary structure of an optical sensing system for sensing an object according to some embodiments of the present invention. 24 to 26B are schematic cross-sectional views showing optical sensors at various stages of the manufacturing process according to some embodiments of the present invention. FIGS. 27A to 27F are schematic cross-sectional views showing optical sensors according to some embodiments of the present invention. 28A to 28C are schematic cross-sectional views of optical sensors according to other embodiments of the present invention. FIGS. 29 to 32 are schematic cross-sectional views of optical sensors including additional structures according to some other embodiments of the present invention. FIG. 33 is a schematic cross-sectional view showing an optical sensing system including an exemplary structure of a display according to some embodiments of the present invention. FIGS. 34 to 35 are schematic cross-sectional views of optical sensing systems including different packaging structures according to some other embodiments of the present invention. FIG. 36 is a schematic diagram showing that the optical sensing system receives incident light according to some embodiments of the present invention. FIGS. 37 to 38 are schematic cross-sectional views showing optical sensors at various stages of the manufacturing process according to other embodiments of the present invention. 39A to 39B are schematic cross-sectional views showing the configuration of microlenses according to other embodiments of the present invention. FIG. 40 is a partially enlarged schematic diagram showing a cross section of the arrangement of microlenses and sensing pixels according to other embodiments of the present invention.

1-d‧‧‧Distance

1-F‧‧‧Target

1-203‧‧‧sensing pixels

1-200‧‧‧Optical sensor

1-201‧‧‧Substrate

1-202‧‧‧Dielectric layer group

1-204‧‧‧The first shading layer

1-204A‧‧‧First aperture

1-205‧‧‧Protection layer

1-206‧‧‧Optical filter layer

1-207‧‧‧First transparent dielectric layer

1-210‧‧‧micro lens

1-300‧‧‧Monitor

1-400‧‧‧frame

1-410‧‧‧accommodation slot

1-420‧‧‧ accommodate bottom

1-500‧‧‧ battery

1-600‧‧‧Optical sensing system

1-610‧‧‧ Base

1-1300‧‧‧Optical sensor module

1-1301‧‧‧Bearing hard version

1-1302‧‧‧flexible circuit board

1-1303‧‧‧bond wire

1-1305‧‧‧Frame

1-1306‧‧‧Sealing layer

Claims (57)

An optical sensor, characterized in that the optical sensor includes: A substrate with multiple sensing pixels arranged in an array; A first transparent dielectric layer above the substrate; and A plurality of microlenses arranged in an array and located on or above the first transparent medium layer, wherein the plurality of microlenses respectively enter a plurality of parallel positive incident light from the outside into the plurality of microlenses, The first transparent medium layer is incident on a part or all of the total number of the sensing pixels, and a plurality of parallel oblique incident lights entering the plurality of microlenses from the outside are incident on the Part or all of the total number of the plurality of sensing pixels, thereby sensing an image of a target object that generates the plurality of parallel normal incident light and the plurality of parallel oblique To the incident light, the plurality of parallel normal incident lights are parallel to the plurality of optical axes of the plurality of microlenses, and each of the parallel oblique incident lights forms an angle with each of the optical axes. The optical sensor according to item 1 of the patent application range, wherein the angle is between 5 degrees and 90 degrees. The optical sensor according to item 1 of the patent application scope, wherein the optical sensor further includes: A dielectric layer group, located on the substrate and covering the plurality of sensing pixels; A first light-shielding layer, located on the dielectric layer group, and having a plurality of first light holes, the plurality of parallel normal incident light passing through the plurality of first light holes, the plurality of parallel Oblique incident light does not pass through the plurality of first light holes; and An optical filter layer, located on the first light-shielding layer, and performing a light wavelength filtering action on the plurality of parallel positive incident light and the plurality of parallel oblique incident light, wherein the first transparent medium A layer is located on the optical filter layer, and the plurality of microlenses are located on the first transparent medium layer. The optical sensor according to item 1 of the patent application scope, wherein the optical sensor further includes: A dielectric layer group, located on the substrate and covering the plurality of sensing pixels; A first light-shielding layer, located on the dielectric layer group, and having a plurality of first light holes, the plurality of parallel normal incident light passing through the plurality of first light holes, the plurality of parallel Oblique incident light does not pass through the plurality of first light holes; and An optical filter plate is located above the plurality of microlenses, and performs a light wavelength filtering action on the plurality of parallel positive incident lights and the plurality of parallel oblique incident lights, the plurality of microlenses Located on the first transparent medium layer. The optical sensor according to item 1 of the patent application scope, wherein the optical sensor further includes: A lens shading layer, located on the first transparent medium layer, and in a plurality of gaps between the plurality of microlenses to shield a plurality of parallel second oblique directions entering the plurality of gaps from the outside Incident light is prevented from entering the first transparent medium layer and the plurality of sensing pixels. The optical sensor according to item 1 of the patent application scope, wherein the optical sensor further includes: A dielectric layer group, located on the substrate and covering the plurality of sensing pixels; A first light-shielding layer, located on the dielectric layer group, and having a plurality of first light holes, the plurality of parallel normal incident light passing through the plurality of first light holes, the plurality of parallel Oblique incident light does not pass through the plurality of first light holes; An optical filter layer, located on the first light-shielding layer, and performing a light wavelength filtering action on the plurality of parallel positive incident light and the plurality of parallel oblique incident light, wherein the first transparent medium A layer is located on the optical filter layer, and the plurality of microlenses are located on the first transparent medium layer; and A lens shading layer, located on the first transparent medium layer, and in a plurality of gaps between the plurality of microlenses to shield a plurality of parallel second oblique directions entering the plurality of gaps from the outside Incident light is prevented from entering the first transparent medium layer and the plurality of sensing pixels. The optical sensor according to item 1 of the patent application scope, wherein the optical sensor further includes: A second light-shielding layer, located on the first transparent medium layer, and having a plurality of second light holes, the plurality of optical axes respectively passing through the plurality of second light holes; and A second transparent medium layer on the second light-shielding layer, the plurality of microlenses on the second transparent medium layer, wherein one of the plurality of microlenses is defined as a target microlens, so The optical axis of the target microlens is defined as a target optical axis, and the sensing pixel through which the target optical axis passes is defined as a target sensing pixel adjacent to the target microlens The plurality of microlenses are defined as adjacent microlenses, and the second light-shielding layer shields a plurality of parallel third oblique incident light entering the adjacent microlenses from the outside from entering the first transparent medium layer And the target sensing pixels. The optical sensor according to item 1 of the patent application scope, wherein the optical sensor further includes: A dielectric layer group, located on the substrate and covering the plurality of sensing pixels; A first light-shielding layer, located on the dielectric layer group, and having a plurality of first light holes, the plurality of parallel normal incident light passing through the plurality of first light holes, the plurality of parallel Oblique incident light does not pass through the plurality of first light holes; An optical filter layer, located on the first light-shielding layer, and performing a light wavelength filtering action on the plurality of parallel positive incident light and the plurality of parallel oblique incident light, wherein the first transparent medium The layer is located on the optical filter layer; A second light-shielding layer, located on the first transparent medium layer, and having a plurality of second light holes, the plurality of optical axes respectively passing through the plurality of second light holes; and A second transparent medium layer on the second light-shielding layer, the plurality of microlenses on the second transparent medium layer, wherein one of the plurality of microlenses is defined as a target microlens, so The optical axis of the target microlens is defined as a target optical axis, and the sensing pixel through which the target optical axis passes is defined as a target sensing pixel adjacent to the target microlens The plurality of microlenses are defined as adjacent microlenses, and the second light-shielding layer shields a plurality of parallel third oblique incident light entering the adjacent microlenses from the outside from entering the first transparent medium layer And the target sensing pixels. The optical sensor according to item 1 of the patent application scope, wherein the optical sensor further includes: A first light-shielding layer located above the substrate and having a plurality of first light holes; and A second light shielding layer, located above the first light shielding layer, and having a plurality of second light holes, wherein the plurality of microlenses are respectively located above the plurality of second light holes, and the plurality of The optical axis respectively passes through the plurality of second optical holes and the plurality of first optical holes, wherein the pitch (X) of the plurality of microlenses is expressed by the following formula: X=A1+(H/h)*(A2-A1)±20µm Where A1 represents an aperture of the first light hole, A2 represents an aperture of the second light hole, H represents a distance between a bottom surface of the microlens and the first light-shielding layer, h represents the The distance between the second light shielding layer and the first light shielding layer. The optical sensor as described in item 1 of the patent application range, wherein the lateral dimensions of the plurality of sensing pixels are designed to receive the plurality of parallel normal incident light, but not The plurality of parallel oblique incident light, and the optical sensor does not have any light-shielding layer between the first transparent medium layer and the plurality of sensing pixels to shield the plurality of parallel Obliquely incident light. The optical sensor according to item 1 of the patent application scope, wherein the optical sensor further includes: A dielectric layer set on the substrate and covering the plurality of sensing pixels; and An optical filter layer, located on the dielectric layer group, and performing a light wavelength filtering action on the plurality of parallel positive incident light and the plurality of parallel oblique incident light, wherein the first transparent medium A layer is located on the optical filter layer, and the plurality of microlenses are located on the first transparent medium layer, wherein the lateral dimensions of the plurality of sensing pixels are designed to receive the plurality of parallel positive directions Incident light, but does not receive the plurality of parallel oblique incident light, and the optical sensor does not have any light-shielding layer between the first transparent medium layer and the plurality of sensing pixels The plurality of parallel oblique incident light is shielded. The optical sensor according to item 1 of the patent application scope, wherein the optical sensor further includes: A plurality of offset microlenses are arranged in an array and located on or above the first transparent medium layer, wherein: The plurality of micro-lenses respectively incident the plurality of parallel normal incident light into a portion of the total number of the plurality of sensing pixels, and incident the plurality of parallel oblique incident light on the The outside of a part of the total number of sensing pixels; The plurality of offset microlenses respectively enter a plurality of parallel second normal incident lights entering the plurality of offset microlenses from the outside through the first transparent medium layer and are incident on the plurality of sensing Outside the rest of the total number of pixels, and incident a plurality of parallel fourth oblique incident light entering the plurality of offset microlenses from the outside into the inside of the rest of the total number of sensing pixels, The target object generates the plurality of parallel second normal incident light and the plurality of parallel fourth oblique incident light, the plurality of parallel second normal incident light is parallel to the plurality of partial Moving the multiple optical axes of the microlens, each of the fourth obliquely incident light makes a second angle with each of the optical axes. The optical sensor according to item 12 of the patent application range, wherein the plurality of offset microlenses are arranged around the plurality of microlenses. The optical sensor according to item 12 of the patent application range, wherein the second angle is between 0 degrees and 60 degrees. An optical sensor, characterized in that the optical sensor includes: A substrate with multiple sensing pixels arranged in an array; A first transparent dielectric layer above the substrate; and A plurality of offset microlenses are arranged in an array and located on or above the first transparent medium layer, wherein: The plurality of offset microlenses respectively enter a plurality of parallel positive incident lights entering the plurality of offset microlenses from the outside through the first transparent medium layer and enter the plurality of sensing pixels Part or all of the total number outside, and a plurality of parallel oblique incident lights entering the plurality of offset microlenses from the outside are incident on part or all of the total number of sensing pixels, thereby Sensing an image of an object, the object generates the plurality of parallel normal incident light and the plurality of parallel oblique incident light, the plurality of parallel normal incident light is parallel to the The plurality of optical axes of the plurality of offset microlenses, and each of the parallel obliquely incident light forms an angle with each of the optical axes. The optical sensor according to item 15 of the patent application range, wherein the optical sensor further includes: A dielectric layer group, located on the substrate and covering the plurality of sensing pixels; A first light-shielding layer, located on the dielectric layer group, and having a plurality of first light holes, the plurality of parallel normal incident light does not pass through the plurality of first light holes, the plurality of parallel Obliquely incident light passing through the plurality of first apertures; and An optical filter layer, located on the first light-shielding layer, and performing a light wavelength filtering action on the plurality of parallel positive incident light and the plurality of parallel oblique incident light, wherein the first transparent medium A layer is located on the optical filter layer, and the plurality of offset microlenses are located on the first transparent medium layer. The optical sensor according to item 15 of the patent application range, wherein the optical sensor further includes: A lens shading layer, located on the first transparent medium layer, and in a plurality of gaps between the plurality of offset microlenses to shield a plurality of parallel second ones entering the plurality of gaps from the outside Oblique incident light is prevented from entering the first transparent medium layer and the plurality of sensing pixels. The optical sensor according to item 15 of the patent application range, wherein the optical sensor further includes: A dielectric layer group, located on the substrate and covering the plurality of sensing pixels; A first light-shielding layer, located on the dielectric layer group, and having a plurality of first light holes, the plurality of parallel normal incident light passing through the plurality of first light holes, the plurality of parallel Oblique incident light does not pass through the plurality of first light holes; An optical filter layer, located on the first light-shielding layer, and performing a light wavelength filtering action on the plurality of parallel positive incident light and the plurality of parallel oblique incident light, wherein the first transparent medium A layer is located on the optical filter layer, and the plurality of offset microlenses are located on the first transparent medium layer; and A lens shading layer, located on the first transparent medium layer, and in a plurality of gaps between the plurality of offset microlenses to shield a plurality of parallel second ones entering the plurality of gaps from the outside Oblique incident light is prevented from entering the first transparent medium layer and the plurality of sensing pixels. The optical sensor according to item 15 of the patent application range, wherein the optical sensor further includes: A second light-shielding layer on the first transparent dielectric layer and having a plurality of second light holes; and A second transparent medium layer on the second light-shielding layer, the plurality of offset microlenses on the second transparent medium layer, wherein one of the plurality of offset microlenses is defined as a target A microlens, the optical axis of the target microlens is defined as a target optical axis, and the sensing pixel passing through the target optical axis is defined as a target sensing pixel and the target microlens The plurality of offset microlenses adjacent to the lens are defined as adjacent microlenses, and the second light shielding layer shields a plurality of parallel third oblique incident light entering the adjacent microlenses from the outside from entering The first transparent medium layer and the target sensing pixels. The optical sensor according to item 15 of the patent application range, wherein the optical sensor further includes: A dielectric layer group, located on the substrate and covering the plurality of sensing pixels; A first light-shielding layer, located on the dielectric layer group, and having a plurality of first light holes, the plurality of parallel normal incident light does not pass through the plurality of first light holes, the plurality of parallel Obliquely incident light passing through the plurality of first light holes; An optical filter layer, located on the first light-shielding layer, and performing a light wavelength filtering action on the plurality of parallel positive incident light and the plurality of parallel oblique incident light, wherein the first transparent medium The layer is located on the optical filter layer; A second light-shielding layer on the first transparent dielectric layer and having a plurality of second light holes; and A second transparent medium layer on the second light-shielding layer, the plurality of offset microlenses on the second transparent medium layer, wherein one of the plurality of offset microlenses is defined as a target A microlens, the optical axis of the target microlens is defined as a target optical axis, and the sensing pixel passing through the target optical axis is defined as a target sensing pixel and the target microlens The plurality of offset microlenses adjacent to the lens are defined as adjacent microlenses, and the second light shielding layer shields a plurality of parallel third oblique incident light entering the adjacent microlenses from the outside from entering The first transparent medium layer and the target sensing pixels. An optical sensing system, characterized in that the optical sensing system includes: A base A battery, set on the base; A frame provided above the battery; An optical sensor for sensing an image of a target; A display for displaying information, wherein the optical sensor is mounted on the frame or attached to a lower surface of the display, the target is located on or above the display, the optical sensor The image of the target object is sensed by the display, and the battery supplies power to the optical sensor and the display. The optical sensing system according to item 21 of the patent application range, characterized in that a shortest distance between a receiving bottom of the frame for mounting the optical sensor and the display is between 0.1 mm Between 0.5 mm. The optical sensing system according to item 21 of the patent application range, wherein the optical sensor includes: A substrate with multiple sensing pixels arranged in an array; A first transparent dielectric layer above the substrate; and A plurality of microlenses arranged in an array and located on or above the first transparent medium layer, wherein the plurality of microlenses respectively enter a plurality of parallel positive incident light from the outside into the plurality of microlenses, The first transparent medium layer is incident on a part or all of the total number of the sensing pixels, and a plurality of parallel oblique incident lights entering the plurality of microlenses from the outside are incident on the Part or all of the total number of the plurality of sensing pixels, thereby sensing an image of the target object, the target object generating the plurality of parallel positive incident light and the plurality of parallel Obliquely incident light, the plurality of parallel normal incident lights are parallel to the plurality of optical axes of the plurality of microlenses, and each of the parallel obliquely incident lights forms an angle with each of the optical axes. The optical sensing system according to item 21 of the patent application range, wherein the optical sensor includes: A substrate with multiple sensing pixels arranged in an array; A first transparent dielectric layer above the substrate; and A plurality of offset microlenses are arranged in an array and located on or above the first transparent medium layer, wherein: The plurality of offset microlenses respectively enter a plurality of parallel positive incident lights entering the plurality of offset microlenses from the outside through the first transparent medium layer and enter the plurality of sensing pixels Part or all of the total number outside, and a plurality of parallel oblique incident lights entering the plurality of offset microlenses from the outside are incident on part or all of the total number of sensing pixels, thereby Sensing the image of the target object, the target object generating the plurality of parallel normal incident light and the plurality of parallel oblique incident light, the plurality of parallel normal incident light being parallel For the plurality of optical axes of the plurality of offset microlenses, each of the parallel obliquely incident light forms an angle with each of the optical axes. A method for manufacturing an optical sensor, characterized in that the method for manufacturing an optical sensor includes the following steps: Provide a substrate with multiple sensing pixels arranged in an array; Forming a first transparent dielectric layer above the substrate; and A plurality of microlenses are formed on or above the first transparent medium layer, arranged in an array, wherein the plurality of microlenses respectively enter a plurality of parallel positive incident light from the outside into the plurality of microlenses through The first transparent medium layer is incident on a part or all of the total number of the sensing pixels, and a plurality of parallel oblique incident lights entering the plurality of microlenses from the outside are incident on the A part or all of the total number of sensing pixels is external, thereby sensing an image of a target object that generates the plurality of parallel normal incident light and the plurality of parallel oblique directions For incident light, the plurality of parallel normal incident lights are parallel to the plurality of optical axes of the plurality of microlenses, and each of the parallel oblique incident lights forms an angle with each of the optical axes. The manufacturing method as described in item 25 of the patent application range, wherein the manufacturing method of the optical sensor further includes the following steps: A first light-shielding layer is formed between the substrate and the first transparent dielectric layer, the first light-shielding layer has a plurality of first light holes, and the plurality of parallel normal incident light passes through the plurality of In the first light hole, the plurality of parallel obliquely incident lights do not pass through the plurality of first light holes. The manufacturing method as described in item 25 of the patent application range, wherein the manufacturing method of the optical sensor further includes the following steps: A second light-shielding layer and a second transparent medium layer are formed between the plurality of microlenses and the first transparent medium layer, the second light-shielding layer has a plurality of second light holes, and the second transparent A dielectric layer is located on the second light-shielding layer, and the plurality of microlenses are located on the second transparent dielectric layer. The second light-shielding layer shields stray light from adjacent lenses from entering the plurality of sensing pixels in. The manufacturing method as described in item 25 of the patent application range, wherein the manufacturing method of the optical sensor further includes the following steps: A lens shading layer is formed in a plurality of gaps between the plurality of microlenses to shield stray light from adjacent gaps from entering the plurality of sensing pixels. A method for manufacturing an optical sensor, characterized in that the method for manufacturing an optical sensor includes the following steps: Provide a substrate with multiple sensing pixels arranged in an array; Forming a first transparent dielectric layer above the substrate; and A plurality of offset microlenses are formed on or above the first transparent medium layer, arranged in an array, wherein the plurality of offset microlenses respectively enter the plurality of parallel microlenses of the plurality of offset microlenses from the outside Normally incident light is incident on a part or all of the total number of the sensing pixels through the first transparent medium layer, and will enter the multiple parallel Oblique incident light is incident inside a part or all of the total number of sensing pixels, thereby sensing an image of a target object, the target object generating the plurality of parallel normal incident light and The plurality of parallel obliquely incident light, the plurality of parallel normal incident light are parallel to the plurality of optical axes of the plurality of offset microlenses, each of the parallel obliquely incident light and each of the The optical axis is angled. The manufacturing method as described in item 29 of the patent application range, wherein the manufacturing method of the optical sensor further includes the following steps: A first light-shielding layer is formed between the substrate and the first transparent dielectric layer, the first light-shielding layer has a plurality of first light holes, and the plurality of parallel normal incident light does not pass through the A first light hole, the plurality of parallel oblique incident light passes through the plurality of first light holes. The manufacturing method as described in item 29 of the patent application range, wherein the manufacturing method of the optical sensor further includes the following steps: A second light-shielding layer and a second transparent medium layer are formed between the plurality of offset microlenses and the first transparent medium layer, the second light-shielding layer has a plurality of second light holes, the first Two transparent medium layers are located on the second light-shielding layer, the plurality of offset microlenses are located on the second transparent medium layer, and the second light-shielding layer shields adjacent lenses from stray light from entering the plurality Sensing pixels. The manufacturing method as described in item 29 of the patent application range, wherein the manufacturing method of the optical sensor further includes the following steps: A lens shading layer is formed in a plurality of gaps between the plurality of offset microlenses to shield stray light from adjacent gaps from entering the plurality of sensing pixels. An optical sensor, including: A substrate, including an array of sensing pixels; A first light-shielding layer located above the sensing pixel array and having a plurality of first openings, wherein the first openings expose the sensing pixels of the sensing pixel array; A microlens layer located above the first light-shielding layer and including a plurality of microlenses; and A first transparent medium layer, located above the sensing pixel array and between the microlens layer and the sensing pixel array, wherein the first transparent medium layer has a first thickness; The microlens layer is used to guide an incident light through the first transparent medium layer to the sensing pixels under the first openings. The optical sensor as described in item 33 of the patent application scope also includes: A protective layer conforms to cover the microlens layer. The optical sensor of claim 33, wherein the center line of at least one microlens has an offset distance from the center line of the corresponding at least one first opening. The optical sensor of claim 35, wherein the offset distance, the radius of curvature of the microlenses, the first thickness, and the apertures of the first openings are configured to enable the sensors The pixel receives light incident at an oblique angle. The optical sensor according to item 33 of the patent application scope, wherein the center line of at least one microlens overlaps with the center line of the corresponding at least one first opening. The optical sensor as described in Item 33 of the patent application range, wherein the first openings and the sensing pixels correspond to each other in one-to-one, one-to-many, or many-to-one correspondence. The optical sensor as described in item 33 of the patent application range, wherein the microlenses and the sensing pixels correspond to each other in one-to-one, one-to-many, or many-to-one correspondence. The optical sensor as recited in item 33 of the patent application range, wherein the thickness of the first light-shielding layer is in the range of about 0.3 microns to about 5 microns, and the pore diameter of the first openings is in the range of 0.3 microns to 50 microns range. The optical sensor as described in item 33 of the patent application range, wherein the first thickness of the first transparent dielectric layer is in the range of 1 micrometer to 50 micrometers. The optical sensor as described in item 33 of the patent application scope also includes: A second transparent medium layer is located between the first light-shielding layer and the microlens layer. The optical sensor as described in item 33 of the patent application scope also includes: An optical filter layer is located between the first transparent medium layer and the microlens layer. The optical sensor as described in item 33 of the patent application scope also includes: A second light-shielding layer is located on the first transparent dielectric layer and has a plurality of second openings. The optical sensor of claim 44, wherein the thickness of the second light-shielding layer is in the range of about 0.3 microns to about 5 microns, and the pore diameter of the second openings is in the range of about 0.3 microns to about 50 The range of microns. The optical sensor as described in item 33 of the patent application scope also includes: A second transparent medium layer between the first transparent medium layer and the microlens layer; and A third light shielding layer is located between the first transparent dielectric layer and the second transparent dielectric layer. An optical sensor, including: A substrate, including a sensing pixel array, wherein the sensing pixel array includes a plurality of sensing pixels, and each of the sensing pixels has a pixel size; A first transparent dielectric layer above the sensing pixel array; and A microlens layer is located above the first transparent medium layer and includes a plurality of microlenses, and each of the microlenses has a diameter, wherein the microlenses are used to guide an incident light to penetrate the first transparent medium layer to These sensing pixels, The pixel size is in the range of 3 microns to 10 microns, and the diameter is in the range of 10 microns to 50 microns. The optical sensor of claim 47, wherein the first transparent dielectric layer has a refractive index n, the first transparent dielectric layer has a thickness T, and the microlenses have a focal length f and a diameter D , And the incident light has an incident angle θi and a refractive angle θr; wherein the pixel size P, the refractive index n, the thickness T, the focal length f, the diameter D, the incident angle θ _i , and the refractive angle θ _r conforms to the following relationship: sinθ _i = n * sinθ _r , f = ((D/2) ² +T ² ) ^1/2 , P/2 = f * tanθ _r . An optical sensor as described in item 47 of the patent application range, wherein the substrate further includes a circuit structure between the adjacent two of the sensing pixels. The optical sensor as described in Item 47 of the patent application range, wherein the center line of at least one microlens has an offset distance from the center line of the corresponding sensing pixel. The optical sensor of claim 47, wherein the offset distance, the pixel size, the refractive index, the thickness, the focal length, and the diameter are configured to enable the sensing pixels Receive light incident at an oblique angle. The optical sensor according to item 47 of the patent application scope, wherein the center line of at least one microlens overlaps with the center line of the corresponding sensing pixel. The optical sensor as described in Item 47 of the patent application range, wherein the microlenses and the sensing pixels correspond to each other in one-to-one, one-to-many, or many-to-one correspondence. The optical sensor as described in item 47 of the patent application range, wherein the first thickness of the first transparent dielectric layer is in the range of 1 micrometer to 50 micrometers. An optical sensor as described in item 47 of the patent application range, wherein the ratio of the pixel size to the diameter is in the range of 0.06 to 1. The optical sensor as described in item 47 of the patent application range, wherein the microlens layer on the first transparent medium layer further has a plurality of microlenses with a second focal length to guide another incident light to penetrate the The first transparent medium layer to the sensing pixels. The optical sensor as described in item 47 of the patent application scope also includes: A second light-shielding layer is located on the first transparent dielectric layer and has a plurality of second openings, wherein the microlenses are correspondingly disposed in the second openings.

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