TW202006876A - 晶圓支撐台 - Google Patents
晶圓支撐台 Download PDFInfo
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- TW202006876A TW202006876A TW108121951A TW108121951A TW202006876A TW 202006876 A TW202006876 A TW 202006876A TW 108121951 A TW108121951 A TW 108121951A TW 108121951 A TW108121951 A TW 108121951A TW 202006876 A TW202006876 A TW 202006876A
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- 239000000919 ceramic Substances 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000010438 heat treatment Methods 0.000 claims description 120
- 239000004020 conductor Substances 0.000 claims description 42
- 235000012431 wafers Nutrition 0.000 description 80
- 238000009826 distribution Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
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Abstract
晶圓支撐台20,埋設RF電極23與加熱電極30在圓板狀陶瓷基體22的內部。RF電極23,以分割晶圓裝載面22a成複數的每區段中設置的複數RF區段電極24、25構成。RF區段電極24、25,分開設置為離晶圓裝載面22a的距離(高度)不同的2段。加熱電極30,係以分割晶圓裝載面22a與RF區段電極24、25相同或不同成複數的每區段中設置的加熱區段電極31、32構成。
Description
本發明,係有關於晶圓支撐台。
作為晶圓支撐台,具有晶圓裝載面的圓板狀陶瓷基體內部從晶圓裝載面側開始依序埋設RF電極與加熱電極係眾所周知。例如,專利文件1中,作為這種晶圓支撐台,揭示包括陶瓷基體內離晶圓裝載面的深度互不同地埋設的圓形狀RF電極及圓環狀RF電極。此晶圓支撐台的晶圓裝載面對向的位置上配置平板上部電極。於是,由此平板上部電極與晶圓支撐台的兩RF電極形成的平行平板電極間施加高頻電力產生電漿。專利文件1中說明,產生電漿之際,對圓形狀導RF電極及圓環狀RF電極分別施加不同高頻電力,可以良好控制電漿的密度分布。
[先行技術文件]
[專利文件]
[專利文件1]日本專利第5896595號公報
[發明所欲解決的課題]
但是,產生電漿之際,平板上部電極與圓形狀RF電極的距離和平板上部電極與圓環狀RF電極的距離不同,且晶圓裝載面與圓形狀RF電極之間的介電質層(陶瓷基體)的厚度和晶圓裝載面與圓環狀RF電極之間的介電質層的厚度不同。因此,電漿的密度可能變得不均勻。
本發明為了解決這樣的課題而形成,主要目的在於抑制電漿的密度不均引起的不良發生。
[用以解決課題的手段]
為了達成至少1個上述目的,本發明的晶圓支撐台採用以下的構成。
即,本發明的晶圓支撐台,係埋設RF電極與加熱電極在具有晶圓裝載面的圓板狀陶瓷基體的內部之晶圓支撐台,其中,
上述RF電極,以分割上述晶圓裝載面成複數的每區段中設置的複數RF區段電極構成;
上述複數RF區段電極,至少分開設置為離晶圓裝載面的距離不同的2段;
上述加熱電極,係以分割上述晶圓裝載面與上述RF區段電極相同或不同成複數的每區段中設置的複數加熱區段電極構成;
上述複數RF區段電極,通過上述陶瓷基體背面上設置的電極端子,分別獨立連接至複數RF區段電極用導體;
上述複數加熱區段電極,通過上述陶瓷基體的上述背面上設置的電極端子,分別獨立連接至複數加熱區段電極用導體。
此晶圓支撐台中,複數RF區段電極及複數加熱區段電極,通過與陶瓷基體的晶圓裝載面相反側的面(背面)上設置的電極端子,分別獨立連接至複數RF區段電極用導體及複數加熱電極用導體。因此,可以每RF區段電極供給不同的高頻電力,可以使晶圓裝載面上裝載的晶圓上的電漿密度某程度均勻。另一方面,因為複數RF區段電極至少分開設置為2段,電漿密度有可能變得不均勻。但是,即使這樣,因為也可以每加熱區段電極供給不同的電力,利用調整加熱器溫度可以補償.調整每區段的成膜性偏差。因此,可以抑制電漿密度變得不均勻引起的不良產生。
本發明的晶圓支撐台中,上述RF電極,包含與上述陶瓷基體同心圓的圓形電極或分割上述圓形電極成複數的電極,作為上述複數RF區段電極,又,上述圓形電極或分割上述圓形電極成複數的電極的外側包含與上述陶瓷基體同心圓的1以上的圓環電極或分割至少1個上述圓環電極成複數的電極也可以。因為陶瓷基體的內周部分與外周部分電漿的密度分布常不同,這樣最好分成圓形電極(或分割圓形電極成複數的電極)與1以上的圓環電極(或分割圓環電極成複數的電極)。例如,作為RF區段電極,設置與陶瓷基體同心圓的圓形電極以及在其圓形電極外側與陶瓷基體同心圓的1以上的圓環電極也可以。或者,設置分割與陶瓷基體同心圓的圓形電極成一半的一對半圓形電極以及在其兩半圓形電極外側與陶瓷基體同心圓的1以上的圓環電極也可以。或者,分割圓環電極成複數也可以。
本發明的晶圓支撐台中,從上述晶圓裝載面看上述陶瓷基體時,上述RF區段電極之間的間隙中配置至少1個上述加熱區段電極也可以。增大施加的RF電力的情況下,取得大的間隙間隔的話,可以有利於抑制RF的干擾,但RF電極不存在的間隙部分電漿密度減少,面內的電漿密度有可能變得不均勻。於是,透過其間隙區域中配置加熱區段電極,利用溫度分布即加熱器溫度的調整可以有效補償.調整因為電漿密度不均勻產生的成膜性偏差。在此情況下,上述間隙中配置的上述加熱區段電極,作為與上述間隙對應的形狀的間隙加熱區段電極也可以。如果是這樣的話,變得容易以間隙加熱區段電極個別控制間隙的溫度,透過調整間隙加熱區段電極的溫度可以補償.調整間隙附近的成膜性偏差。
或者,本發明的晶圓支撐台中,從上述晶圓裝載面看上述陶瓷基體時,配置為上述複數RF區段電極的形狀與上述複數加熱區段電極的形狀一致。如果是這樣的話,可以利用與其對應的加熱區段電極個別溫度控制各RF區段電極。在此,所謂「加熱區段電極的形狀」,係指例如加熱區段電極以線圈構成時,其線圈佈線的區域形狀。
本發明的晶圓支撐台中,上述複數RF區段電極,包含與上述陶瓷基體同心圓的圓形電極以及在上述圓形電極的外側與上述陶瓷基體同心圓的1以上的圓環電極,構成上述加熱電極的上述複數加熱區段電極,設置在同一平面上,上述複數RF區段電極離上述加熱電極的高度,越接近上述陶瓷基體中心的RF區段電極越高(或越低)也可以。在那情況下,使各RF區段電極上的上述陶瓷基體的厚度(即介電質層厚度)相同也可以。
本發明的晶圓支撐台,包括中空的陶瓷傳動軸,接合至與上述陶瓷基體的上述晶圓裝載面相反側的面的中央區域,上述複數RF區段電極用導體以及上述加熱電極用導體配置在上述陶瓷傳動軸內部也可以。
上述晶圓支撐台中,多段分開設置上述複數RF區段電極,離晶圓裝載面的距離都不同也可以,雖然多段但相同段設置2以上的RF區段電極也可以。又,上述複數加熱區段電極,設置在同一平面上也可以,離晶圓裝載面的距離不同也可以。又,RF區段電極的形狀或數量、加熱區段電極的形狀或數量,可以任意決定。
以下邊參照圖面,邊說明本發明適當的實施形態。第1圖係顯示電漿產生裝置10的概略構成立體圖,第2圖係第1圖的A-A剖面圖,第3圖係第1圖的B-B剖面圖,第4圖係顯示RF電極23及加熱電極30的配置立體圖。
電漿產生裝置10,如第1圖所示,包括晶圓支撐台20及上部電極50。
晶圓支撐台20,用於支撐加熱利用電漿進行CVD(化學氣相沉積)、蝕刻等的晶圓W,安裝至未圖示的半導體製程用的密室內部。此晶圓支撐台20,包括陶瓷基體22及中空的陶瓷傳動軸29。
陶瓷基體22,如第2圖所示,陶瓷製(例如鋁製、氮化鋁製)的圓板狀構件。此陶瓷基體22的表面,成為可裝載晶圓W的晶圓裝載面22a。與陶瓷基體22的晶圓裝載面22a相反側的面(背面)22b的中央,接合陶瓷傳動軸29。陶瓷基體22中,如第2〜4圖所示,埋設RF電極23與加熱電極30。RF電極23與加熱電極30,從接近晶圓裝載面22a的位置開始依此順序埋設。
RF電極23,設置為與晶圓裝載面22a平行(包含大體上平行的情況,以下相同)。RF電極23,以設置在離陶瓷基體22的中心既定半徑(例如,陶瓷基體22的半徑一半以上)的圓21(參照第3圖)內側的區段中的第1RF區段電極24以及設置在其圓21外側的區段中的第2RF區段電極25構成。即,第1及第2RF區段電極24、25,設置在分割晶圓裝載面22a成複數的每區段中。第1RF區段電極24,係與陶瓷基體22同心圓的圓形電極。第2RF區段電極25,係與陶瓷基體22同心圓的圓環電極,與第1RF區段電極24離間。第1及第2RF區段電極24、25,在陶瓷基體22內部埋設成不同高度(離晶圓裝載面22a的距離)。在此,第1RF區段電極24,設置為接近晶圓裝載面22a。第1RF區段電極24,重複設置在投影陶瓷傳動軸29至陶瓷基體22的圓形中央區域22c(第2及3圖的2點虛線)中。第2RF區段電極25,設置在偏離中央區域22c的位置上。第1及第2RF區段電極24、25,都以導電性的網目薄片構成。
第1RF區段電極24,如第2圖所示,背面略中央連接電極端子24a。電極端子24a,設置為從陶瓷基體22的背面22b露出至外部。第1RF區段電極24,經由電極端子24a連接至第1RF區段電極用導體34。第1RF區段電極用導體34,經由陶瓷傳動軸29的中空內部及下部開口,連接至第1交流電源44。
第2RF區段電極25,如第2及4圖所示,具有以導電性的網目薄片構成的連接用導體27。連接用導體27,設置為從圓環狀的第2RF區段電極25的中心開始的放射狀,配置為不干擾電極端子24a。連接用導體27中,設置電極端子25a從陶瓷基體22的背面22b露出至外部。電極端子25a也配置為不干擾電極端子24a。第2RF區段電極25,經由連接用導體27及電極端子25a與第2RF區段電極用導體35連接。第2RF區段電極用導體35,經由陶瓷傳動軸29的中空內部及下部開口連接至第2交流電源45。
加熱電極30,與晶圓裝載面22a平行設置。加熱電極30,由設置在上述圓21(參照第3圖)內側的區段中的第1加熱區段電極31以及設置在其圓21外側的區段中的第2加熱區段電極32構成。即,第1及第2加熱區段電極31、32,與第1及第2RF區段電極24、25相同,設置在分割晶圓裝載面22a為2的每區段中。第1加熱區段電極31與第2加熱區段電極32,在陶瓷基體22的內部離間埋設成為相同高度(即同一平面上)。
第1加熱區段電極31,具有2個電極端子31a、31b,從一方的電極端子31a經過圓21內側的圓形區域全體以一筆繪成的要領到另一方的電極端子31b配線線圈。各電極端子31a、31b,經由各第1加熱區段電極用電極36、36連接至第1加熱電源47。又,第2圖中,方便上只顯示一方的電極端子31a。第1加熱區段電極31,在平面視時,設置為重複在第1RF區段電極24中。
第2加熱區段電極32,具有2個電極端子32a、32b,從一方的電極端子32a經過圓21外側的圓環區域全體以一筆繪成的要領到另一方的電極端子32b配線線圈。各電極端子32a、32b,經由各第2加熱區段電極用電極37、37連接至第2加熱電源48。又,第2圖中,方便上只顯示一方的電極端子32a。第2加熱區段電極32,在平面視時,設置為重複在第2RF區段電極25中。
RF電極23、連接用導體27及加熱電極30的材質,相同也可以,不同也可以。作為材質,只要有導電性,不特別限定,舉出例如Mo、W、Nb、Mo化合物、W化合物或Nb化合物。其中,最好與陶瓷基體22的熱膨脹係數差小。
陶瓷傳動軸29,係以與陶瓷基體22相同的陶瓷構成的圓筒狀構件。陶瓷傳動軸29的上部端面,擴散接合至陶瓷基體22的背面22b或以TCB(Thermal Compression Bonding(熱壓接合))接合。所謂TCB,係指接合對象的2個構件之間夾入金屬接合材,在加熱至金屬接合材的固相線溫度以下的溫度之狀態下加壓接合2個構件的眾所周知的方法。
上部電極50,如第1圖所示,固定至與陶瓷基體22的晶圓裝載面22a對向的上方位置(例如未圖示的密室的天花板面)。此上部電極50,連接至接地。
其次,說明關於電漿產生裝置10的使用例。未圖示的密室內配置電漿產生裝置10,晶圓裝載面22a上裝載晶圓W。於是,從第1交流電源44供給第1RF區段電極24高頻電力,從第2交流電源45供給第2RF區段電極25高頻電力。藉此,上部電極50與陶瓷基體22內埋設的RF電極23構成的平行平板電極間產生電漿,利用其電漿對晶圓W施行CVD成膜、施行蝕刻。又,根據未圖示的熱電偶的檢測信號求出晶圓W的溫度,為了使其溫度成為設定溫度(例如350℃或300℃),施加至第1加熱區段電極31的電壓由第1加熱電源47控制,施加至第2加熱區段電極32的電壓由第2加熱電源48控制。
以上詳述的晶圓支撐台20,可以分別供給第1及第2RF區段電極24、25不同的高頻電力(例如相同頻率不同瓦特數的電力、不同頻率相同瓦特數的電力、不同頻率不同瓦特數的電力等),可以某程度使晶圓裝載面22a上裝載的晶圓W上的電漿密度均勻。另一方面,因為設置第1及第2RF區段電極24、25成多段,電漿密度有可能不均勻。但是,即使這樣,因為也可以分別供給第1及第2加熱區段電極31、32不同的電力,利用調整加熱器溫度可以補償.調整每區段的成膜性偏差。因此,可以抑制電漿密度變得不均勻引起的不良產生。
又,因為陶瓷基體22的內周部分與外周部分電漿的密度分布常不同,如上述最好把RF電極23分成內周側的圓形電極(第1RF區段電極24)與外周側的圓環電極(第2RF區段電極25)。
又,從晶圓裝載面22a看陶瓷基體22時(即平面視時),配置為第1及第2RF區段電極24、25與第1及第2加熱區段電極31、32一致。因此,利用其對應的加熱區段電極31、32可以個別溫度控制各RF區段電極24、25。
又,本發明不受上述的實施形態任何限定,屬於本發明的技術範圍內當然能夠以各種形態實施。
例如,上述實施形態中,配置為平面視時第1及第2RF區段電極24、25的形狀與第1及第2加熱區段電極31、32的形狀一致,但配置為互為相似形狀也可以。又,如第5圖所示,平面視時第1及第2RF區段電極24、25之間出現的甜甜圈形狀的間隙G中重疊配置第1及第2加熱區段電極131、132的一方(在此,第2加熱區段電極132)。第5圖中,關於與上述實施形態相同的構成要素附上相同的符號。第5圖中,方便上,省略各RF區段電極24、25的連接用導體、RF區段電極用導體、電源,也省略各加熱區段電極131、132的加熱區段電極用導體、電源。又,各加熱區段電極131、132省略配線圖案,只顯示配線線圈的區域。增大施加的RF電力的情況下,取得大的間隙G的間隔的話,可以有利於抑制RF的干擾,但RF電極不存在的間隙G的部分電漿密度減少,面內的電漿密度有可能變得不均勻。於是,透過其間隙G的區域中重複配置第2加熱區段電極132,利用溫度分布即加熱器溫度的調整可以有效補償.調整因為電漿密度不均勻產生的成膜性偏差。又,如第6圖所示,平面視時第1及第2RF區段電極24、25之間出現的甜甜圈形狀的間隙G中,設置與其間隙G對應的形狀(在此與間隙G相同的形狀)的間隙加熱區段電極183也可以。在此情況下,第1及第2加熱區段電極181、182的形狀,分別與第1及第2RF區段電極24、25的形狀大致一致。藉此,例如增大第1及第2RF區段電極24、25之間間隙G的間隔時,也變得容易以間隙加熱區段電極183個別控制間隙G的溫度。即,透過調整間隙加熱區段電極183的溫度可以補償.調整間隙附近的成膜性偏差。
上述實施形態中,設置各加熱區段電極31、32在同一平面上,但設置成互為高度(離晶圓裝載面22a的距離)不同也可以。例如,使各加熱區段電極31、32的高度配合各RF區段電極24、25的高度也可以。
上述實施形態中,以高度不同的第1及第2RF區段電極24、25構成RF電極23,但以高度不同的3個以上的RF區段電極構成RF電極也可以。第7圖中,顯示以不同高度的第1〜第3RF區段電極124〜126構成RF電極23的例。第7圖中,關於與上述實施形態相同的構成要素附上相同的符號。第7圖中,方便上,省略各RF區段電極124〜126的連接用導體、RF區段電極用導體、電源,也省略各加熱區段電極231〜233的加熱區段電極用導體、電源。又,各加熱區段電極231〜233省略配線圖案,只顯示配線線圈的區域。設置這些加熱區段電極231〜233在同一平面上。第1RF區段電極124,係與陶瓷基體22同心圓的圓形電極,第2及第3RF區段電極125、126,係與陶瓷基體22同心圓的圓環電極。第1〜第3RF區段電極124〜126,從接近晶圓裝載面22a側開始,以第1RF區段電極124、第2RF區段電極125及第3RF區段電極126的順序排列。構成加熱電極30的第1〜第3加熱區段電極231〜233,當平面視時,設置為與第1〜第3RF區段電極124〜126一致。此構成也得到與上述實施形態相同的效果。尤其,因為可以分別供給第1〜第3RF區段電極124〜126不同的高頻電力,可以更良好地控制電漿的密度分布。又,因為可以分別供給第1〜第3加熱區段電極231〜233不同的電力,利用調整加熱器溫度可以補償.調整每區段的成膜性偏差。
又,構成RF電極23的第1〜第3RF區段電極124〜126離加熱電極30的高度h1〜h3,可以分別任意設定。例如,如第7圖中所示,中心部的第1RF區段電極124離加熱電極30的高度最高,隨著往外周去,離加熱電極30的高度變低也可以(h1>h2>h3)。或者,與此相反,中心部的第1RF區段電極124離加熱電極30的高度最低,隨著往外周去,離加熱電極30的高度變高也可以(h1>h2>h3)。或者,h1>h2>h3、h1>h2>h3等,各區段電極124〜126的高度h1〜h3,自由設定也可以。
上述實施形態中,RF電極23以圓形電極的第1RF區段電極24與環形電極的第2RF區段電極25構成,但將環形電極的第2RF區段電極25分割成複數,個別連接交流電源至各分割電極也可以,將圓形電極的第1RF區段電極24分割成複數,個別連接交流電源至各分割電極也可以。這樣的話,可以輕易控制使電漿的密度分布更良好。第8圖中,例示分割構成RF電極23的第2RF區段電極25成3個圓弧狀電極251〜253的情況。又,圓弧狀電極251〜253全部相同高度也可以,分別不同高度也可以,2個相同高度1個不同高度也可以。第9圖中,例示分割構成RF電極23的第2RF區段電極25成3個圓弧狀電極251〜253,再分割第1RF區段電極24為2個半圓形電極241、242的情況。又,半圓形電極241、242相同高度也可以,分別不同高度也可以。
上述實施形態中,陶瓷基體22表面例示平坦的表面,但採用第10圖所示的階梯型陶瓷基體422也可以。第10圖中,關於與上述的實施形態相同的構成要素附上相同的符號。陶瓷基體422表面,在外周部具有圓環狀的段差面422a。段差面422a,比晶圓裝載面22a低一層。此陶瓷基體422中,使內側的第1RF區段電極(圓形電極)24到晶圓裝載面22a的介電質厚度與外側的第2RF區段電極(圓環電極)25到段差面422a的介電質厚度相同也可以。這樣的話,可以均勻化內外的電漿密度。或者,採用第11圖所示的口袋型陶瓷基體522也可以。第11圖中,關於與上述的實施形態相同的構成要素附上相同的符號。陶瓷基體522的表面,在外周部具有圓環狀的段差面522a。段差面522a,比晶圓裝載面22a高一層。RF電極23,以內側的第1RF區段電極24(圓形電極)24及外側的第2RF區段電極(圓環電極)525構成。第2RF區段電極525,經由連接用導體527、電極端子25a以及第2RF區段電極用導體35連接至第2交流電源(參照第2圖)。又,第2RF區段電極525配置在比第1RF區段電極24高的位置。陶瓷基體522中,也使第1RF區段電極24到晶圓裝載面22a的介電層厚度與外側的第2RF區段電極525到段差面522a的介電層厚度相同也可以。這樣的話,可以均勻化內外的電漿密度。
又,第7圖中,陶瓷基體22的表面例示平面的表面,但採用第12圖所示的附圓環溝的陶瓷基體622也可以。第12圖中,關於與上述實施形態相同的構成要素附上相同的符號。陶瓷基體622的表面,具有與陶瓷基體622同心圓的圓環溝622a。RF電極23,以內側的第1RF區段電極(圓形電極)624、外側的第2RF區段電極(圓環電極)625以及更外側的第3RF區段電極(圓環電極)626構成。第2RF區段電極625,經由連接用導體627、電極端子25a以及第2RF區段電極用導體35連接至第2交流電源45(參照第2圖)。第3RF區段電極626,經由連接用導體628、電極端子626a以及第3RF區段電極用導體636連接至第3交流電源(圖示略)。使第1RF區段電極24到晶圓裝載面22a的介電層厚度、第2RF區段電極625到圓環溝622a的底面的介電層厚度以及第3RF區段電極626到晶圓裝載面22a的介電層厚度相同也可以。這樣的話,可以均勻化內外的電漿密度。
上述實施形態或第7圖的形態中,使RF電極23的分割數與加熱電極30的分割數相同,但兩者的分割數不同也可以。
上述實施形態中,第1及第2RF區段電極24、25、連接用導體27,都是以導電性的網目薄片構成,但因為不特別限定為網目薄片,例如使用導電性一樣的薄片(金屬箔等)也可以。
上述實施形態中,透過對RF電極23施加電壓,吸引晶圓W至晶圓裝載面22a也可以。又,陶瓷基體22內更埋設靜電電極,透過對其靜電電極施加電壓吸引晶圓W至晶圓裝載面22a也可以。
上述實施形態中,顯示晶圓支撐台20的製造方法的一例,但晶圓支撐台20的製造方法不特別限定於此,利用其它眾所周知的製造方法製造晶圓支撐台20也可以。例如依照日本專利公開2012-89694號公報記載的製造方法製造晶圓支撐台20也可以。
本申請案,以2018年7月4日申請的日本國專利申請第2018-127620號作為優先主張的基礎,由於引用這些內容全部包含在本說明書內。
[產業上的利用可能性]
本發明,能夠利用於電漿處理晶圓之際。
10‧‧‧電漿產生裝置
20‧‧‧晶圓支撐台
21‧‧‧圓
22‧‧‧陶瓷基體
22a‧‧‧晶圓裝載面
22b‧‧‧背面
22c‧‧‧中央區域
23‧‧‧RF電極
24‧‧‧第1RF區段電極
24a‧‧‧電極端子
25‧‧‧第2RF區段電極
25a‧‧‧電極端子
27‧‧‧連接用導體
29‧‧‧陶瓷傳動軸
30‧‧‧加熱電極
31‧‧‧第1加熱區段電極
31a、31b‧‧‧電極端子
32‧‧‧第2加熱區段電極
32a、32b‧‧‧電極端子
34‧‧‧第1RF區段電極用導體
35‧‧‧第2RF區段電極用導體
36‧‧‧第1加熱區段電極用電極
37‧‧‧第2加熱區段電極用電極
44‧‧‧第1交流電源
45‧‧‧第2交流電源
47‧‧‧第1加熱電源
48‧‧‧第2加熱電源
50‧‧‧上部電極
124‧‧‧第1RF區段電極
125‧‧‧第2RF區段電極
126‧‧‧第3RF區段電極
131‧‧‧第1加熱區段電極
132‧‧‧第2加熱區段電極
181‧‧‧第1加熱區段電極
182‧‧‧第2加熱區段電極
183‧‧‧間隙加熱區段電極
231、232‧‧‧加熱區段電極
231‧‧‧第1加熱區段電極
232‧‧‧第2加熱區段電極
233‧‧‧第3加熱區段電極
241、242‧‧‧半圓形電極
251‧‧‧253圓弧狀電極
422‧‧‧陶瓷基體
422a‧‧‧段差面
522‧‧‧陶瓷基體
522a‧‧‧段差面
525‧‧‧第2RF區段電極
527‧‧‧連接用導體
622‧‧‧陶瓷基體
622a‧‧‧圓環溝
624‧‧‧第1RF區段電極
625‧‧‧第2RF區段電極
626‧‧‧第3RF區段電極
626a‧‧‧電極端子
627‧‧‧連接用導體
628‧‧‧連接用導體
636‧‧‧第3RF區段電極用導體
G‧‧‧間隙
W‧‧‧晶圓
[第1圖]係顯示電漿產生裝置10的概略構成立體圖;
[第2圖]係第1圖的A-A剖面圖;
[第3圖]係第1圖的B-B剖面圖;
[第4圖]係顯示RF電極23及加熱電極30的配置立體圖;
[第5圖]係顯示其它例的RF電極23及加熱電極30的配置立體圖;
[第6圖]係顯示其它例的RF電極23及加熱電極30的配置立體圖;
[第7圖]係顯示其它例的RF電極23及加熱電極30的配置立體圖;
[第8圖]係顯示RF電極23的其它例之平面圖;
[第9圖]係顯示RF電極23的其它例之平面圖;
[第10圖]係包括陶瓷基體422的晶圓支撐台的剖面圖;
[第11圖]係包括陶瓷基體522的晶圓支撐台的剖面圖;
[第12圖]係包括陶瓷基體622的晶圓支撐台的剖面圖。
20‧‧‧晶圓支撐台
21‧‧‧圓
22‧‧‧陶瓷基體
23‧‧‧RF電極
24‧‧‧第1RF區段電極
24a‧‧‧電極端子
25‧‧‧第2RF區段電極
25a‧‧‧電極端子
27‧‧‧連接用導體
30‧‧‧加熱電極
31‧‧‧第1加熱區段電極
31a、31b‧‧‧電極端子
32‧‧‧第2加熱區段電極
32a、32b‧‧‧電極端子
34‧‧‧第1RF區段電極用導體
35‧‧‧第2RF區段電極用導體
36‧‧‧第1加熱區段電極用電極
37‧‧‧第2加熱區段電極用電極
44‧‧‧第1交流電源
45‧‧‧第2交流電源
47‧‧‧第1加熱電源
48‧‧‧第2加熱電源
Claims (9)
- 一種晶圓支撐台,係埋設RF電極與加熱電極在具有晶圓裝載面的圓板狀陶瓷基體的內部之晶圓支撐台,其中, 上述RF電極,以分割上述晶圓裝載面成複數的每區段中設置的複數RF區段電極構成; 上述複數RF區段電極,至少分開設置為離晶圓裝載面的距離不同的2段; 上述加熱電極,係以分割上述晶圓裝載面與上述RF區段電極相同或不同成複數的每區段中設置的複數加熱區段電極構成; 上述複數RF區段電極,通過上述陶瓷基體背面上設置的電極端子,分別獨立連接至複數RF區段電極用導體; 上述複數加熱區段電極,通過上述陶瓷基體的上述背面上設置的電極端子,分別獨立連接至複數加熱區段電極用導體。
- 如申請專利範圍第1項所述的晶圓支撐台,其中, 上述RF電極,包含與上述陶瓷基體同心圓的圓形電極或分割上述圓形電極成複數的電極,作為上述複數RF區段電極,又,在上述圓形電極或分割上述圓形電極成複數的電極的外側包含與上述陶瓷基體同心圓的1以上的圓環電極或分割至少1個上述圓環電極成複數的電極。
- 如申請專利範圍第1或2項所述的晶圓支撐台,其中, 從上述晶圓裝載面看上述陶瓷基體時,上述RF區段電極之間的間隙中至少配置1個上述加熱區段電極。
- 如申請專利範圍第3項所述的晶圓支撐台,其中, 上述間隙中配置的上述加熱區段電極,係與上述間隙形狀相同形狀的間隙加熱區段電極。
- 如申請專利範圍第1或2項所述的晶圓支撐台,其中, 從上述晶圓裝載面看上述陶瓷基體時,配置為上述複數RF區段電極形狀與上述複數加熱區段電極形狀一致。
- 如申請專利範圍第1~5項中任一項所述的晶圓支撐台,其中, 上述複數RF區段電極,包含與上述陶瓷基體同心圓的圓形電極以及在上述圓形電極外側與上述陶瓷基體同心圓的1個以上的圓環電極; 構成上述加熱電極的上述複數加熱區段電極,設置在同一平面上; 上述複數RF區段電極離上述加熱電極的高度,越接近上述陶瓷基體中心的RF區段電極越高。
- 如申請專利範圍第1~5項中任一項所述的晶圓支撐台,其中, 上述複數RF區段電極,包含與上述陶瓷基體同心圓的圓形電極以及在上述圓形電極外側與上述陶瓷基體同心圓的1個以上的圓環電極; 構成上述加熱電極的上述複數加熱區段電極,設置在同一平面上; 上述複數RF區段電極離上述加熱電極的高度,越接近上述陶瓷基體中心的RF區段電極越低。
- 如申請專利範圍第6或7項所述的晶圓支撐台,其中, 各RF區段電極上的上述陶瓷基體的厚度相同。
- 如申請專利範圍第1~8項中任一項所述的晶圓支撐台,包括: 中空的陶瓷傳動軸,接合至與上述陶瓷基體的上述晶圓裝載面相反側的面的中央區域; 其中,上述複數RF區段電極用導體及上述加熱電極用導體配置在上述陶瓷傳動軸內部。
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WO2022146667A1 (en) | 2020-12-29 | 2022-07-07 | Mattson Technology, Inc. | Electrostatic chuck assembly for plasma processing apparatus |
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JP7407752B2 (ja) * | 2021-02-05 | 2024-01-04 | 日本碍子株式会社 | ウエハ支持台 |
US20220282371A1 (en) * | 2021-03-03 | 2022-09-08 | Applied Materials, Inc. | Electrostatic chuck with metal shaft |
KR102697618B1 (ko) * | 2021-04-01 | 2024-08-23 | 엔지케이 인슐레이터 엘티디 | 웨이퍼 지지대 및 rf 로드 |
CN215992754U (zh) * | 2021-09-09 | 2022-03-11 | 常州市派腾电子技术服务有限公司 | 吸液发热件、雾化器及气溶胶发生装置 |
US12233501B2 (en) | 2022-02-17 | 2025-02-25 | Tes Co., Ltd | Substrate support device |
WO2024038774A1 (ja) * | 2022-08-16 | 2024-02-22 | 東京エレクトロン株式会社 | プラズマ処理装置及び静電チャック |
US20240387154A1 (en) * | 2023-05-15 | 2024-11-21 | Applied Materials, Inc. | Afe (active far edge) heater/bipolar esc with simplified and optimized structure for greater reliability, lower cost and better manufacturability |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5896595U (ja) | 1981-12-24 | 1983-06-30 | ヤマハ株式会社 | ピアノの棚板構造 |
JPH0786251A (ja) * | 1993-09-17 | 1995-03-31 | Mitsubishi Electric Corp | ドライエッチング装置 |
JPH1064984A (ja) * | 1996-08-16 | 1998-03-06 | Sony Corp | ウエハステージ |
JP4256503B2 (ja) * | 1997-10-30 | 2009-04-22 | 東京エレクトロン株式会社 | 真空処理装置 |
KR100404778B1 (ko) * | 1998-10-29 | 2003-11-07 | 동경 엘렉트론 주식회사 | 진공 처리 장치 |
JP2002134600A (ja) * | 2000-10-25 | 2002-05-10 | Ibiden Co Ltd | 静電チャック |
JP2005018992A (ja) * | 2003-06-23 | 2005-01-20 | Ibiden Co Ltd | プラズマ発生装置用電極埋設部材 |
JP2005197393A (ja) * | 2004-01-06 | 2005-07-21 | Ibiden Co Ltd | プラズマ発生装置用電極埋設部材 |
WO2006001425A1 (ja) * | 2004-06-28 | 2006-01-05 | Kyocera Corporation | 静電チャック |
US8405005B2 (en) * | 2009-02-04 | 2013-03-26 | Mattson Technology, Inc. | Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate |
JP5960384B2 (ja) * | 2009-10-26 | 2016-08-02 | 新光電気工業株式会社 | 静電チャック用基板及び静電チャック |
JP5896595B2 (ja) * | 2010-10-20 | 2016-03-30 | ラム リサーチ コーポレーションLam Research Corporation | 2層rf構造のウエハ保持体 |
US20130107415A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Electrostatic chuck |
CN105282877B (zh) * | 2014-06-17 | 2019-10-25 | 住友电气工业株式会社 | 用于半导体制造装置的陶瓷加热器 |
CN107004626B (zh) | 2014-11-20 | 2019-02-05 | 住友大阪水泥股份有限公司 | 静电卡盘装置 |
US20160225652A1 (en) * | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
JP6475054B2 (ja) * | 2015-03-26 | 2019-02-27 | 日本碍子株式会社 | 半導体製造装置用部材 |
JP6530701B2 (ja) * | 2015-12-01 | 2019-06-12 | 日本特殊陶業株式会社 | 静電チャック |
JP6226092B2 (ja) * | 2016-03-14 | 2017-11-08 | Toto株式会社 | 静電チャック |
JP6560150B2 (ja) * | 2016-03-28 | 2019-08-14 | 日本碍子株式会社 | ウエハ載置装置 |
CN107534012B (zh) * | 2016-03-29 | 2020-06-09 | 日本碍子株式会社 | 静电卡盘加热器 |
-
2019
- 2019-06-18 KR KR1020207015190A patent/KR102648118B1/ko active Active
- 2019-06-18 CN CN201980004355.9A patent/CN111052343B/zh active Active
- 2019-06-18 JP JP2019547740A patent/JP6773917B2/ja active Active
- 2019-06-18 WO PCT/JP2019/024033 patent/WO2020008859A1/ja active Application Filing
- 2019-06-24 TW TW108121951A patent/TWI779206B/zh active
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Also Published As
Publication number | Publication date |
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TWI779206B (zh) | 2022-10-01 |
JP6773917B2 (ja) | 2020-10-21 |
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US20200161106A1 (en) | 2020-05-21 |
CN111052343A (zh) | 2020-04-21 |
KR20210028137A (ko) | 2021-03-11 |
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US11764039B2 (en) | 2023-09-19 |
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