TW202006383A - Display panel and detection method for light-emitting device substrate - Google Patents

Abstract

A display panel includes a light-emitting device substrate, opposite substrate, a common electrode, and at least one connection structure. The light-emitting device substrate includes a substrate, a first pad, at least two test pads and at least two micro light-emitting diodes. The first pad and the at least two test pads are located on the substrate. Each of the at least two micro light-emitting diodes includes a first semiconductor layer, a first electrode, a second semiconductor layer, and a second electrode. The first electrode is electrically connected to the first pad. The second electrode is electrically connected to one of the at least two test pads. The opposite substrate and the light-emitting device substrate are separated by a gap. The at least one connection structure is electrically connected to the common electrode and the at least two test pads. A detection method for light-emitting device substrate is also provided.

Description

Display panel and detection method of light-emitting element substrate

The invention relates to a detection method of a display panel and a light-emitting element substrate, and in particular to a detection method of a display panel and a light-emitting element substrate having test pads.

Light-Emitting Diode (LED) is a self-luminous element, which has the characteristics of low power consumption, high brightness, high resolution and high color saturation, so it is suitable for the construction of light-emitting diode display panel painting素结构。 Prime structure.

However, as the volume of the light-emitting diode gradually shrinks, new problems have emerged during the manufacturing process of the light-emitting diode display panel. When a pixel circuit includes multiple miniature light-emitting diodes connected in series or parallel, even if the measured pixels can be displayed normally, it cannot be determined whether each miniature light-emitting diode in the pixel They are all functioning normally. Therefore, there is an urgent need for a solution that can solve the above problems.

The invention provides a display panel, which can solve the problem of detecting whether the miniature light emitting diode is malfunctioning, so as to improve the quality of the display panel.

The invention provides a detection method of a light-emitting element substrate, which can solve the problem of detecting whether a miniature light-emitting diode is malfunctioning, so as to improve the quality of a display panel.

A display panel of the present invention includes a light-emitting element substrate, a counter substrate, a common electrode, and at least one conductive structure. The light-emitting element substrate includes a substrate, a first pad, at least two test pads, and at least two miniature light-emitting diodes. The first pad is located on the substrate. At least two test pads are located on the substrate. Each of the at least two miniature light emitting diodes includes a first semiconductor layer, a first electrode, a second semiconductor layer, and a second electrode. The first electrode is electrically connected to the first pad and the first semiconductor layer. The second semiconductor layer overlaps the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer and a corresponding one of the at least two test pads. The opposite substrate is located on the light-emitting element substrate, and is spaced apart from the light-emitting element substrate. The common electrode is located on the opposite substrate. At least one conducting structure is electrically connected to the common electrode and at least two test pads.

A detection method of a light-emitting element substrate of the present invention includes: providing a light-emitting element substrate including a substrate, a first pad, at least two test pads, and at least two miniature light-emitting diodes; The probes respectively contact the at least two test pads; and apply voltage to the at least two miniature light emitting diodes respectively to detect the at least two miniature light emitting diodes. The first pad is located on the substrate. At least two test pads are located on the substrate. Each of the at least two miniature light emitting diodes includes a first semiconductor layer, a first electrode, a second semiconductor layer, and a second electrode. The first electrode is electrically connected to the first pad and the first semiconductor layer. The second semiconductor layer overlaps the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer and a corresponding one of the at least two test pads.

Based on the above, the detection method of the display panel and the light-emitting element substrate of the present invention includes a light-emitting element substrate, a counter substrate, a common electrode, and at least one conductive structure through the display panel. The light-emitting element substrate includes a substrate, a first pad, and at least two A test pad and at least two miniature light-emitting diodes can solve the problem of detecting whether the miniature light-emitting diodes are malfunctioning, so as to improve the quality of the display panel.

In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.

Hereinafter, the present invention will be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the present invention are shown. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology and the present invention, and will not be interpreted as idealized or excessive Formal meaning unless explicitly defined as such in this article.

Exemplary embodiments are described herein with reference to cross-sectional views that are schematic diagrams of idealized embodiments. Therefore, a change in the shape of the graph as a result of, for example, manufacturing techniques and/or tolerances can be expected. Therefore, the embodiments described herein should not be construed as being limited to the specific shapes of the regions as shown herein, but include deviations in shapes caused by manufacturing, for example. For example, an area shown or described as flat may generally have rough and/or non-linear characteristics. In addition, the acute angle shown may be round. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the precise shapes of the regions, and are not intended to limit the scope of the claims.

FIG. 1A is a schematic perspective view of a display panel according to an embodiment of the invention. Fig. 1B is a schematic sectional view taken along the line A-A' in Fig. 1A.

1A and 1B, the display panel 10 includes a light-emitting element substrate 100, a counter substrate 300, a common electrode COM, and a conductive structure 200. In this embodiment, the display panel 10 further includes a color filter element CF, but the invention is not limited thereto.

In this embodiment, FIG. 1A is a light-emitting device substrate 100 including a substrate SB, three first pads 110, three test pads 140a, three test pads 140b, three miniature light-emitting diodes LED1 and three A miniature light emitting diode LED2 is taken as an example, but the invention is not limited to this. In some embodiments, the light emitting element substrate 100 includes a substrate SB, a first pad 110, a test pad 140a, a test pad 140b, a miniature light emitting diode LED1 and a miniature light emitting diode LED2. In this embodiment, the light-emitting element substrate 100 further includes an active element T and a retaining wall structure 120. The material of the substrate SB may be glass, quartz, organic polymer, metal, or other applicable materials.

The active element T is located on the substrate SB. The active device T includes a gate G, a source S, a drain D, and a semiconductor pattern layer SM. The gate G is located on the substrate SB. The gate G is electrically connected to one of the scan lines (not shown). The material of the gate electrode G may be a single layer or a multilayer stacked conductive material. The gate insulating layer GI covers the substrate SB and the gate electrode G. The gate G is located between the substrate SB and the gate insulating layer GI. The gate insulating layer GI may be a single-layer structure or a multi-layer stacked composite structure.

The semiconductor pattern layer SM overlaps with the gate electrode G and is separated from each other without contact by the gate insulating layer GI. The semiconductor pattern layer SM may be a single-layer or multi-layer structure, which includes amorphous silicon, polycrystalline silicon, microcrystalline silicon, single crystal silicon, organic semiconductor materials, oxide semiconductor materials (for example: indium zinc oxide, indium gallium zinc oxide, Other suitable materials or combinations thereof), other suitable materials, containing dopants in the above materials or a combination of the above materials.

In this embodiment, the surface of the semiconductor pattern layer SM has an ohmic contact layer OC, but the invention is not limited thereto. The material of the ohmic contact layer OC is, for example, an N-type doped semiconductor or a P-type doped semiconductor.

The source electrode S and the drain electrode D are located on the semiconductor pattern layer SM and are electrically connected to the semiconductor pattern layer SM. An ohmic contact layer OC is sandwiched between the source electrode S and the drain electrode D and the semiconductor pattern layer SM. The source S is electrically connected to one of the data lines (not shown). The drain electrode D is electrically connected to one end of the miniature light emitting diodes LED1 and LED2. The drain electrode D is electrically connected to the cathode or anode of the miniature light emitting diodes LED1 and LED2, for example. In this embodiment, the source electrode S and the drain electrode D may be a single-layer structure or a multi-layer stacked composite structure. The materials of the source electrode S and the drain electrode D may be the same as or different from the material of the gate electrode G. In this embodiment, the active device T is, for example, a bottom gate type thin film transistor, but the invention is not limited thereto. In other embodiments, the active element T may also be a top gate thin film transistor, or other suitable thin film transistors.

The flat layer FL is located on the active element T. The flat layer FL has a via V1. In this embodiment, the material of the flat layer FL may include an organic material, an inorganic material, or a combination thereof, where the organic material includes, for example, polyester (PET), polyolefin, polypropylene, polycarbonate, polycyclic Oxyalkyls, polystyrenes, polyethers, polyketones, polyalcohols, polyaldehydes, other suitable materials or combinations thereof, inorganic materials include, for example, silicon oxide, silicon nitride, silicon oxynitride, other A suitable material or a stack of at least two of the above materials.

The first pad 110 is located on the substrate SB. In this embodiment, the first pad 110 is located on the flat layer FL. The first pad 110 is electrically connected to the drain D of the active device T through the via V1. In this embodiment, the material of the first pad 110 is a conductive material, including metal materials, metal oxides or other suitable materials or a stack of the above materials, where the metal materials include copper, steel, copper tungsten alloy, copper silver Alloy, titanium aluminum alloy or other suitable metals, metal oxides include, for example, indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, other suitable oxides or the above At least the two are stacked.

The miniature light emitting diodes LED1 and LED2 are located on the substrate SB. In this embodiment, the miniature light emitting diodes LED1, LED2 are located on the flat layer FL. The micro light-emitting diodes LED1 and LED2 are formed on the growth substrate, for example, and then transferred onto the substrate SB using a mass transfer technique. The miniature light-emitting diodes LED1 and LED2 are fixed to the light-emitting element substrate 100 through an adhesive layer (not shown) or fixed to the light-emitting element substrate 100 through solder (not shown), for example.

The retaining wall structure 120 is located on the substrate SB. In this embodiment, the retaining wall structure 120 is located on the flat layer FL. The retaining wall structure 120 is located around the miniature light emitting diodes LED1, LED2. In this embodiment, the retaining wall structure 120 surrounds the miniature light emitting diodes LED1, LED2, but the invention is not limited thereto. In some embodiments, the retaining wall structure 120 does not completely surround the miniature light emitting diodes LED1, LED2. The material of the retaining wall structure 120 may be a polymer material (for example, epoxy resin or other suitable materials).

In this embodiment, the wall structure 120 defines a plurality of pixel areas PX, and each pixel area PX has two miniature light emitting diodes LED1 and LED2 respectively. The shape of the pixel area PX projected vertically on the board SB is, for example, a triangle, a quadrangle, a pentagon, a hexagon, a heptagon, an octagon, a circle, an ellipse, or other geometric shapes. In this embodiment, an example in which the shape of the pixel area PX projected vertically on the board SB is a quadrangle.

The test pads 140a and 140b are located on the substrate SB. The test pads 140a and 140b are located on the retaining wall structure 120. In the present embodiment, the position of the test pad 140a relative to the miniature light emitting diode LED1 is the same as the position of the test pad 140b relative to the miniature light emitting diode LED2, but the invention is not limited thereto. In other embodiments, the position of the test pad 140a relative to the miniature light emitting diode LED1 is different from the position of the test pad 140b relative to the miniature light emitting diode LED2. In this embodiment, the test pad 140a is electrically connected to the miniature light emitting diode LED1 through the wire W1, and the test pad 140b is electrically connected to the miniature light emitting diode LED2 through the wire W2. An angle α is formed between the retaining wall structure 120 and the substrate SB, and the included angle α is, for example, 10 degrees to 90 degrees. Therefore, the wires W1 and W2 can easily climb onto the retaining wall structure 120.

The dimensions of the test pads 140a and 140b are 10 to 50 microns, respectively. In this embodiment, the materials of the test pads 140a and 140b are conductive materials, including metal materials, metal oxides, or other suitable materials. The metal materials include copper, steel, copper-tungsten alloy, copper-silver alloy, or other suitable materials. The metal, metal oxides include, for example, indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, other suitable oxides, or a stacked layer of at least two of the above. In this embodiment, the material of the test pad 140a and the test pad 140b are the same, but the invention is not limited thereto. In other embodiments, the materials of the test pad 140a and the test pad 140b may be different. In some embodiments, the test pad 140a is formed integrally with the wire W1, and the test pad 140b is formed integrally with the wire W2, but the invention is not limited thereto.

In this embodiment, the test pad 140a is electrically connected to one end of the miniature light emitting diode LED1 and the system low voltage OVSS1 (shown in FIG. 4A), and the test pad 140b is electrically connected to the miniature light emitting diode LED2 One end and the system low voltage OVSS2 (shown in FIG. 4A). Since the test pad 140a and the test pad 140b are separated from each other, whether the miniature light emitting diode LED1 and the miniature light emitting diode LED2 are faulty can be detected separately.

Please continue to refer to FIG. 1A and FIG. 1B. After the detection of the miniature light emitting diode is completed, the counter substrate 300 and the substrate SB are paired together. The counter substrate 300 is located on the light emitting element substrate 100 and is separated from the light emitting element substrate 100 by a distance. The material of the counter substrate 300 may be the same as or different from the material of the substrate SB.

In this embodiment, the color filter element CF is located on the opposite substrate 300. The color filter element CF includes red, green, and blue filter patterns. In some embodiments, the color filter element CF also includes filter patterns of other colors. In addition, the counter substrate 300 may further include a light-shielding pattern layer (not shown), which may also be referred to as a black matrix. The light-shielding pattern layer is provided between the patterns of the color filter element CF, for example.

The common electrode COM is located on the counter substrate 300. The common electrode COM covers the color filter element CF. The common electrode COM is electrically connected to a common voltage. In this embodiment, the material of the common electrode COM includes metal materials, metal oxides or other suitable materials, wherein the metal materials include copper, steel, copper-tungsten alloy, copper-silver alloy or other suitable metals, metal oxides such as It includes indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, other suitable oxides, or a stacked layer of at least two of the above.

In this embodiment, the conducting structure 200 is located between the opposite substrate 300 and the substrate SB. For example, the conductive structure 200 is located between the common electrode COM on the counter substrate 300 and the substrate SB. In this embodiment, the conductive structure 200 includes a polymer pillar 210 and a conductive layer 220. In this embodiment, the polymer pillar 210 is first formed on the opposite substrate 300, and then the conductive layer 220 is formed on the polymer pillar 210, but the invention is not limited thereto. The conducting structure 200 is electrically connected to the common electrode COM and the test pads 140a and 140b. In this embodiment, each conductive structure 200 corresponds to one test pad 140a or one test pad 140b, but the invention is not limited thereto. In other embodiments, one in this embodiment, one conducting structure 200 is simultaneously arranged corresponding to the test pads 140a, 140b. The material of the conductive layer 220 may be the same as or different from the material of the common electrode COM. In some embodiments, the conductive layer 220 and the common electrode COM are formed in the same process, and the conductive layer 220 and the common electrode COM are formed at a high After the molecular column 210. However, the invention is not limited to this. In other embodiments, the conductive structure 200 includes conductive glue, such as silver glue or other suitable materials.

2A is a schematic cross-sectional view of a miniature light emitting diode according to an embodiment of the invention. The miniature light emitting diode LED shown in FIG. 2A is, for example, the miniature light emitting diodes LED1 and LED2 of FIGS. 1A and 1B.

The miniature light emitting diode LED includes a first electrode E1, a first semiconductor layer 132, a light emitting layer 134, a second semiconductor layer 136, and a second electrode E2 that are sequentially stacked. In this embodiment, the miniature light emitting diode LED further includes an insulating layer 138. In other words, the miniature light emitting diodes LED1, LED2 of FIGS. 1A and 1B each include a first electrode E1, a first semiconductor layer 132, a light emitting layer 134, a second semiconductor layer 136, and a second electrode E2 that are sequentially stacked, And in some embodiments, the miniature light-emitting diodes LED1, LED2 also each include an insulating layer 138.

One of the first electrode E1 and the second electrode E2 is the cathode of the miniature light emitting diode LED, and the other is the anode of the miniature light emitting diode LED. The first electrode E1 is electrically connected to the first pad 110 and the first semiconductor layer 132. In this embodiment, the first electrode E1 of the micro light-emitting diode LED is electrically connected to the first pad 110 and is further electrically connected to the drain D of the active device T. For example, solder is formed on the first pad 110, and then the first electrode E1 of the micro light-emitting diode LED is fixed on the first pad 110 by the solder, so that the first of the micro-light emitting diode LED The electrode E1 is electrically connected to the first pad 110.

The second semiconductor layer 136 overlaps the first semiconductor layer 132. One of the first semiconductor layer 132 and the second semiconductor layer 136 is an N-type doped semiconductor, and the other is a P-type doped semiconductor. Materials of the first semiconductor layer 132 and the second semiconductor layer 136 include, for example, gallium nitride (GaN), indium gallium nitride (InGaN), gallium arsenide (GaAs), other group IIIA and group VA elements, or other suitable materials Material, but the invention is not limited to this.

The light emitting layer 134 is located between the first semiconductor layer 132 and the second semiconductor layer 136. The light-emitting layer 134 has, for example, a quantum well (Quantum Well; QW). The light-emitting layer 134 is, for example, a single quantum well (SQW), a multi-quantum well (MQW), or other suitable materials. The holes provided by the P-type doped semiconductor layer and The electrons provided by the N-type doped semiconductor layer can combine in the light-emitting layer 134 and release energy in the mode of light.

In this embodiment, the insulating layer 138 of the micro light-emitting diode LED has at least one opening O to expose a part of the top surface of the second semiconductor layer 136. The second electrode E2 is disposed in the opening O where the insulating layer 138 is exposed in the second semiconductor layer 136, and the second electrode E2 is electrically connected to the second semiconductor layer 136. The second electrode E2 is electrically connected to a corresponding one of the test pads 140a and 140b. In this embodiment, the second electrode E2 of the miniature light emitting diode LED1 is electrically connected to the test pad 140a through the wire W1, and the second electrode E2 of the miniature light emitting diode LED2 is electrically connected to the test through the wire W2接垫140b. In this embodiment, the materials of the first electrode E1 and the second electrode E2 may include: metal materials, metal oxides or other suitable materials, where the metal materials include copper, steel, copper-tungsten alloy, copper-silver alloy or other Suitable metals, metal oxides include, for example, indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, other suitable oxides, or stacked layers of at least two of the foregoing. The material of the first electrode E1 may be the same as or different from the material of the second electrode E2.

Although in this embodiment, the miniature light emitting diode LED is an example of a vertical miniature light emitting diode, the present invention is not limited thereto. In other embodiments, the miniature light emitting diode LED may also be a horizontal miniature light emitting diode or other types of miniature light emitting diodes.

2B is a schematic cross-sectional view of a miniature light emitting diode according to another embodiment of the invention. The miniature light emitting diode LED shown in FIG. 2B is, for example, the miniature light emitting diodes LED1 and LED2 of FIGS. 1A and 1B.

The difference between the embodiment of FIG. 2B and the embodiment of FIG. 2A is that the miniature light emitting diode LED of FIG. 2B is an example of a horizontal miniature light emitting diode.

Referring to FIG. 2B, the insulating layer 138 of the micro light emitting diode LED has at least two openings O1, O2, and the openings O1, O2 respectively expose a portion of the top surface of the first semiconductor layer 132 and a portion of the top surface of the second semiconductor layer 136 And the first electrode E1 and the second electrode E2 are respectively disposed in the openings O1, O2 where the insulating layer 138 exposes the first semiconductor layer 132 and the second semiconductor layer 136. In this embodiment, the second semiconductor layer 136 overlaps part of the first semiconductor layer 132.

In this embodiment, for example, additional wires need to be formed to electrically connect the first electrode E1 to the first pad 110. For example, an adhesive layer is formed on the light emitting element substrate 100, and the micro light emitting diode LED is fixed on the light emitting element substrate 100 by the adhesive layer, and then a wire is formed to electrically connect the first electrode E1 to the first pad 110.

3 is a schematic perspective view of a display panel according to another embodiment of the invention. It must be noted here that the embodiment of FIG. 3 uses the element numbers and partial contents of the embodiment of FIG. 1A, wherein the same or similar reference numerals are used to indicate the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated. Hereinafter, the differences between the display panel 20 of FIG. 3 and the display panel 10 of FIG. 1A will be described.

Referring to FIG. 3, in the display panel 20, the position of the test pad 140a relative to the micro light emitting diode LED1 is different from the position of the test pad 140b relative to the LED2. In the two adjacent light-emitting element substrates 100, a plurality of conductive structures 200 electrically connected to the test pad 140a may be connected to each other to form a strip-like structure, and a plurality of conductive structures 200 electrically connected to the test pad 140b Can be connected to each other to form another strip-like structure. In this embodiment, each conductive structure 200 is connected to a plurality of test pads 140a, 140b, and the error tolerance of the conductive structure 200 to the test pad 140a and the test pad 140b is relatively large.

In this embodiment, the conductive structure 200 uses conductive adhesive as an example, but the invention is not limited thereto. In other embodiments, the conducting structure 200 may also be composed of a strip-shaped polymer wall and a conductive layer on the surface.

Based on the above, the display panel 20 of the present invention includes the light-emitting element substrate 100, the counter substrate 300, the common electrode COM, and the conductive structure 200, wherein the light-emitting element substrate 100 includes the substrate SB, the first pad 110, the blocking wall structure 120, two A test pad 140a, 140b and two miniature light-emitting diodes LED1, LED2, thereby detecting whether each miniature light-emitting diode is faulty, so as to improve the quality of the display panel. In addition, by connecting each conductive structure 200 to a plurality of test pads 140a, 140b, the error tolerance when the conductive structure 200 is aligned with the test pad 140a and the test pad 140b can be greater.

4A to 4C are schematic circuit diagrams of a detection process of a light-emitting element substrate according to an embodiment of the invention. It must be noted here that the embodiments of FIGS. 4A to 4C continue to use the element numbers and partial contents of the embodiments of FIGS. 1A to 2A, wherein the same or similar reference numerals are used to indicate the same or similar elements, and the same is omitted. Description of technical content. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

Please refer to FIG. 4A, the detection method of the light emitting element substrate 100 includes providing the light emitting element substrate 100. The light-emitting element substrate 100 includes test pads 140a and 140b and miniature light-emitting diodes LED1 and LED2. In this embodiment, the pixel circuit PE is electrically connected to the signal lines SL1, SL2, SL3, the system high voltage OVDD, and the miniature light emitting diodes LED1, LED2. The signal line SL1 is, for example, a data line, the signal line SL2 is, for example, a scanning line, and the signal line SL3 is, for example, a control signal line.

In this embodiment, one end of the miniature light emitting diode LED1 (such as the first electrode E1) and one end of the miniature light emitting diode LED2 (such as the first electrode E1) are electrically connected through the first pad 110 The pixel circuit PE.

Referring to FIG. 4B, two probes 400a and 400b are respectively in contact with two test pads 140a and 140b. Although this embodiment uses two probes to contact two test pads, the invention is not limited to this. In other embodiments, the number of probes may vary with the number of test pads. For example, multiple test pads 140a and multiple test pads 140b can be simultaneously detected by multiple probes.

Next, the probes 400a and 400b apply voltages to the miniature light-emitting diodes LED1 and LED2 respectively to detect whether the miniature light-emitting diodes LED1 and LED2 are malfunctioning.

Please refer to FIG. 4C. In this embodiment, the miniature light emitting diode LED2 is detected as malfunctioning. Although this embodiment is a miniature light emitting diode that detects a failure, the present invention is not limited to this. In other embodiments, as the number of miniature light-emitting diodes in the light-emitting element substrate increases, the number of detected malfunctioning miniature light-emitting diodes may also increase.

Next, open the faulty micro light emitting diode LED2 and the corresponding test pad 140b or the first pad 110 to electrically separate the faulty micro light emitting diode LED2 from other non-faulty micro light emitting diodes. An open circuit can also be used to avoid a short circuit between the malfunctioning miniature light-emitting diode and the normally operating miniature light-emitting diode so that all miniature light-emitting diodes do not emit light. In this embodiment, the method of opening the circuit includes laser cutting the wire or other conductive structure using the laser light L, but the invention is not limited to this. In other embodiments, the faulty miniature light-emitting diode can also be replaced.

In this embodiment, one end of the miniature light emitting diode LED1 (for example, the second electrode E2) and one end of the miniature light emitting diode LED2 (for example, the second electrode E2) are electrically connected to the test pads 140a, 140b, respectively Therefore, the probes 400a and 400b can apply voltages to the miniature light-emitting diode LED1 and the miniature light-emitting diode LED2, respectively, so it can accurately detect which miniature light-emitting diode is faulty, and then the faulty miniature light-emitting diode can be made The polar body is electrically separated from other non-faulty miniature light emitting diodes or the faulty miniature light emitting diodes are replaced to improve the quality of the display panel. In this embodiment, the size of the test pads 140a, 140b is larger than the width of the wires W1, W2, whereby the probes 400a, 400b are easier to contact the test pads 140a, 140b.

Based on the above, the detection method of the light emitting element substrate of the present invention includes two test pads 140a, 140b and two miniature light emitting diodes LED1, LED2 through the light emitting element substrate 100, and two probes 400a, 400b are used to contact two tests The pads 140a and 140b detect whether the miniature light-emitting diodes LED1 and LED2 are faulty, and the faulty miniature light-emitting diode can be replaced and the quality of the display panel can be improved.

In summary, the detection method of the display panel and the light emitting element substrate of the present invention can solve the detection by the light emitting element substrate including the substrate, the first pad, at least two test pads, and at least two miniature light emitting diodes The problem of whether the miniature light-emitting diode is malfunctioning is to improve the quality of the display panel.

Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

10, 20, 30‧‧‧ Display panel 100‧‧‧ Light emitting element substrate 110‧‧‧ First pad 120‧‧‧ Retaining wall structure 132‧‧‧ First semiconductor layer 134‧‧‧Light emitting layer 136‧‧‧ Second semiconductor layer 138‧‧‧Insulating layer 140a, 140b‧‧‧Test pad 200‧‧‧Conducting structure 210‧‧‧ Polymer pillar 220‧‧‧Conducting layer 300‧‧‧Counter substrate 400a, 400b‧‧ ‧Probe A-A'‧‧‧cross-section CF‧‧‧color filter element COM‧‧‧common electrode D‧‧‧ drain electrode E1‧‧‧first electrode E2‧‧‧second electrode FL‧‧‧ Flat layer G‧‧‧Gate GI‧‧‧Gate insulating layer L‧‧‧Laser LED, LED1, LED2‧‧‧Miniature light emitting diode O, O1, O2‧‧‧ Open OC‧‧‧ Ohm contact layer OVDD‧‧‧System high voltage OVSS1, OVSS2‧‧‧System low voltage PE‧‧‧Pixel circuit PX‧‧‧Pixel area S‧‧‧Source SB‧‧‧Substrate SL1, SL2, SL3‧‧‧Signal Line SM‧‧‧Semiconductor pattern layer T‧‧‧Active element V1‧‧‧Through hole W1, W2‧‧‧ Lead α‧‧‧ included angle

FIG. 1A is a schematic perspective view of a display panel according to an embodiment of the invention. Fig. 1B is a schematic sectional view taken along the line A-A' in Fig. 1A. 2A is a schematic cross-sectional view of a miniature light emitting diode according to an embodiment of the invention. 2B is a schematic cross-sectional view of a miniature light emitting diode according to another embodiment of the invention. 3 is a schematic perspective view of a display panel according to another embodiment of the invention. 4A to 4C are schematic circuit diagrams of a detection process of a light-emitting element substrate according to an embodiment of the invention.

10‧‧‧Display panel

100‧‧‧Light-emitting element substrate

110‧‧‧ First pad

120‧‧‧ Retaining wall structure

140a, 140b ‧‧‧ test pad

200‧‧‧conducting structure

210‧‧‧polymer column

220‧‧‧conductive layer

300‧‧‧Substrate

A-A’‧‧‧hatching

CF‧‧‧Color filter element

COM‧‧‧Common electrode

LED1, LED2‧‧‧Miniature LED

PX‧‧‧Pixel area

SB‧‧‧Substrate

T‧‧‧Active components

W1, W2‧‧‧wire

Claims (11)

A display panel includes: a light-emitting element substrate, including: a substrate; a first pad on the substrate; at least two test pads on the substrate; and at least two miniature light-emitting diodes, the Each of the at least two miniature light emitting diodes includes: a first semiconductor layer; a first electrode electrically connected to the first pad and the first semiconductor layer; a second semiconductor layer overlapping The first semiconductor layer; and a second electrode, electrically connected to the second semiconductor layer and the corresponding one of the at least two test pads; a pair of opposite substrates, located on the light-emitting device substrate, and with the The light emitting element substrates are separated by a distance; a common electrode is located on the opposite substrate; and at least one conductive structure is electrically connected to the common electrode and the at least two test pads. The display panel as described in item 1 of the patent application scope further includes: a retaining wall structure located around the at least two miniature light emitting diodes, and the at least two test pads are located on the retaining wall structure. The display panel according to item 1 of the patent application scope, wherein the size of each of the at least two test pads is 10 to 50 microns. The display panel as described in item 1 of the patent application scope further includes: a color filter element located on the opposite substrate. The display panel according to item 1 of the patent application scope, wherein the at least one conductive structure includes: at least one polymer pillar; and at least one conductive layer on the at least one polymer pillar. The display panel as described in item 1 of the patent application range, wherein the at least one conducting structure includes a conductive adhesive. A method for detecting a light-emitting element substrate includes: providing a light-emitting element substrate including: a substrate; a first pad on the substrate; at least two test pads on the substrate; and at least Two miniature light emitting diodes, each of the at least two miniature light emitting diodes includes: a first semiconductor layer; a first electrode electrically connected to the first pad and the first semiconductor layer A second semiconductor layer overlapping the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer and the corresponding one of the at least two test pads; with at least two probes respectively; Contacting the at least two test pads; and respectively applying voltages to the at least two miniature light emitting diodes to detect the at least two miniature light emitting diodes. The detection method as described in item 7 of the patent application scope further includes: at least one miniature light-emitting diode is detected as malfunctioning; and the at least one miniature light-emitting diode and the corresponding test pad or the first pad open circuit. The detection method as described in item 8 of the patent application range, wherein the method of opening the at least one miniature light emitting diode from the corresponding test pad or the first pad includes laser cutting. The detection method according to item 7 of the patent application scope, wherein the light-emitting element substrate further comprises: a retaining wall structure located around the at least two miniature light-emitting diodes, and the at least two test pads are located on the retaining wall Structurally. The detection method as described in item 7 of the patent application range, wherein the size of each of the at least two test pads is 10 to 50 microns.

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