TW202001187A - Inspecting device of gratings and inspecting method of same - Google Patents
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本發明係關於一種光柵檢測裝置及其檢測方法,特別是關於一種利用偵測一光柵結構所出射的一繞射光,從該繞射光的位置來獲得該光柵結構的一週期,進而可檢測該光柵結構均勻度的光柵檢測裝置及其檢測方法。 The invention relates to a grating detection device and a detection method, in particular to a method of detecting a diffracted light emitted by a grating structure, obtaining a period of the grating structure from the position of the diffracted light, and then detecting the grating Grating detection device and detection method for structural uniformity.
雷射以特定角度打進光柵後,除了與入射角度一樣的反射光之外,還會依照光柵週期、材料、環境折射率出現至少一道繞射光。一般而言,測量繞射光的繞射角度後,可由公式得知光柵週期,而繞射光的強度則可以反應光柵品質。 After the laser enters the grating at a specific angle, in addition to the reflected light at the same incident angle, at least one diffracted light will appear according to the grating period, material, and environmental refractive index. Generally speaking, after measuring the diffraction angle of the diffracted light, the grating period can be known from the formula, and the intensity of the diffracted light can reflect the grating quality.
光柵元件的特性由許多因素影響,若不考慮材料吸收的條件下,則主要是由週期、填充因子及厚度決定。在檢測上常以掃描式電子顯微鏡(SEM)或原子力顯微鏡(AFM)來量測表面結構及高低起伏的形貌,以檢測週期、厚度及填充因子來判斷光柵特性;或以繞射系統來判斷光柵特性,利用檢測繞射效率與週期來做為光柵的參考係數,但無法實際觀察到光柵表面或側面的形貌。因此,利用SEM或AFM與繞射系統分別可以判斷光柵品質。然而,目前已知的繞射系統架構無法進行快速且大面 積的光柵檢測,與掃描式電子顯微鏡或原子力顯微鏡相比下並無優勢。 The characteristics of the grating element are affected by many factors. If the material absorption is not considered, it is mainly determined by the period, fill factor and thickness. Scanning electron microscopy (SEM) or atomic force microscopy (AFM) is often used to measure the surface structure and undulating topography. The inspection period, thickness and fill factor are used to judge the grating characteristics; or the diffraction system is used to judge The characteristics of the grating use the detection diffraction efficiency and the period as the reference coefficient of the grating, but the topography or side profile of the grating cannot be actually observed. Therefore, the grating quality can be judged by SEM or AFM and diffraction system respectively. However, the currently known diffraction system architecture cannot perform fast and large-area grating inspection, and has no advantage over scanning electron microscopes or atomic force microscopes.
故,有必要提供一種的方法,以解決習用技術中所存在的問題。 Therefore, it is necessary to provide a method to solve the problems in the conventional technology.
本發明之主要目的在於提供一種光柵檢測裝置及其檢測方法,利用水平移動的待測物載台以及可轉動且可移動的光偵測器來提升檢測的精準度。由於雷射光入射至待測物載台的角度在檢測過程中是固定的,根據該待測物載台上的待測基板所具有的不同週期光柵結構,會產生不同的繞射光出射。本發明的該光柵檢測裝置可利用光偵測器的移動距離、光偵測器的垂直高度及入射角來決定光柵週期,具有結構簡單、檢測速度快且高精準度的優點。 The main object of the present invention is to provide a grating detection device and a detection method thereof, which utilize a horizontally moving object carrier and a rotatable and movable photodetector to improve the detection accuracy. Since the angle at which the laser light is incident on the test object carrier is fixed during the detection process, different diffracted light exits will be generated according to the different periodic grating structures of the test substrate on the test object carrier. The grating detection device of the invention can use the moving distance of the photodetector, the vertical height of the photodetector and the incident angle to determine the grating period, and has the advantages of simple structure, fast detection speed and high accuracy.
為達上述之目的,本發明的一實施例提供一種光柵檢測裝置,其包含:一待測物載台,水平可移動地設置於一第一滑軌上,該第一滑軌是一二維滑軌,用以承載一基板,其中該基板具有一光柵結構;一雷射光源,設置於該待測物載台上方,用以提供一雷射光束,其中該雷射光束具有一波長,並且以一入射角入射到該基板上;一光偵測器,可移動且可轉動地設置於一第二滑軌上,用以捕捉從該基板出射的一繞射光,其中該第二滑軌與該第一滑軌彼此平行;以及一數據處理器,與該光偵測器相連接,用以計算及輸出該光柵結構的一週期;其中該週期通過下列公式(I)來計算:
在本發明的一實施例中,該光偵測器是一位置感應裝置(PSD,position sensitive device)。 In an embodiment of the invention, the photodetector is a position sensitive device (PSD).
在本發明的一實施例中,該繞射光進入該光偵測器的一角度等於或大致等於90度。 In an embodiment of the invention, an angle at which the diffracted light enters the light detector is equal to or approximately equal to 90 degrees.
在本發明的一實施例中,該數據處理器計算該繞射光的一繞射效率,該繞射效率為該光偵測器所接收到的該繞射光的一能量除以該雷射光束的一出光能量。 In an embodiment of the invention, the data processor calculates a diffraction efficiency of the diffracted light, the diffraction efficiency being an energy of the diffracted light received by the light detector divided by the laser beam A light energy.
在本發明的一實施例中,另包含一擴束器,用於調整該雷射光束的一直徑,並將該雷射光束聚焦於該基板上。 In an embodiment of the invention, a beam expander is further included for adjusting a diameter of the laser beam and focusing the laser beam on the substrate.
本發明的另一實施例提供一種光柵檢測方法,其包含步驟:提供一基板,其中該基板具有一光柵結構;將該基板置於一待測物載台上,其中該待測物載台水平可移動地設置在一第一滑軌上,該第一滑軌是一二維滑軌;將一雷射光束以一入射角入射到該基板上,其中該雷射光束具有一波長;使用一光偵測器捕捉從該基板出射的一繞射光,其中該光偵測器可移動且可轉動地設置於一第二滑軌上,該第一滑軌與該第二滑軌彼此平行;以及使用一數據處理器計算及輸出該光柵結構的一週期;其中該週期通過下列公式(I)來計算:
在本發明的一實施例中,該光偵測器是一位置感應裝置(PSD,position sensitive device)。 In an embodiment of the invention, the photodetector is a position sensitive device (PSD).
在本發明的一實施例中,該繞射光進入該光偵測器的一角度等於或大致等於90度。 In an embodiment of the invention, an angle at which the diffracted light enters the light detector is equal to or approximately equal to 90 degrees.
在本發明的一實施例中,該步驟(5)另包含一步驟:計算該繞射光的一繞射效率,其中該繞射效率為該光偵測器所接收到的該繞射光的一能量除以該雷射光束的一出光能量。 In an embodiment of the present invention, the step (5) further includes a step: calculating a diffraction efficiency of the diffracted light, wherein the diffraction efficiency is an energy of the diffracted light received by the light detector Divided by the outgoing light energy of the laser beam.
在本發明的一實施例中,在雷射光束入射到該基板之前,另包含使用一擴束器調整該雷射光束的一直徑,使該雷射光束聚焦於該基板上。 In an embodiment of the invention, before the laser beam is incident on the substrate, it further includes using a beam expander to adjust a diameter of the laser beam so that the laser beam is focused on the substrate.
1‧‧‧第一滑軌 1‧‧‧ First slide
2‧‧‧待測物載台 2‧‧‧Test object carrier
3‧‧‧基板 3‧‧‧ substrate
4‧‧‧雷射光源 4‧‧‧Laser light source
5‧‧‧光偵測器 5‧‧‧Light detector
6‧‧‧第二滑軌 6‧‧‧Second Slide
Li‧‧‧雷射光束 Li‧‧‧Laser beam
Df‧‧‧繞射光 Df‧‧‧diffracted light
h‧‧‧垂直高度 h‧‧‧Vertical height
x‧‧‧水平距離 x‧‧‧Horizontal distance
θi‧‧‧入射角 θi‧‧‧incidence angle
第1圖:本發明一實施例之一種光柵檢測裝置的示意圖。 Figure 1: A schematic diagram of a grating detection device according to an embodiment of the invention.
第2圖:顯示使用本發明的光柵檢測裝置、掃描式顯微鏡(SEM)以及原子力顯微鏡(AFM)分別檢測具有漸變週期為381奈米~612奈米的光柵結構的量測結果。 FIG. 2 shows the measurement results of the grating structure with the gradient period of 381 nm to 612 nm using the grating detection device, scanning microscope (SEM) and atomic force microscope (AFM) of the present invention respectively.
第3圖:顯示使用本發明的光柵檢測裝置、掃描式顯微鏡(SEM)以及原子力顯微鏡(AFM)分別檢測具有漸變週期為263奈米~337奈米的光柵結構的量測結果。 FIG. 3 shows the measurement results of the grating structure with the gradient period of 263 nm to 337 nm using the grating detection device, scanning microscope (SEM) and atomic force microscope (AFM) of the present invention.
第4圖:顯示使用本發明的光柵檢測裝置、掃描式顯微鏡(SEM)以及原子力顯微鏡(AFM)分別檢測具有漸變週期為209奈米~233奈米的光柵結構的量測結果。 Fig. 4 shows the measurement results of the grating structure with the gradient period of 209 nm to 233 nm using the grating inspection device, scanning microscope (SEM) and atomic force microscope (AFM) of the present invention respectively.
為了讓本發明之上述及其他目的、特徵、優點能更明顯易懂,下文將特舉本發明較佳實施例,並配合所附圖式,作詳細說明如下。再者,本發明所提到的方向用語,例如上、下、頂、底、前、後、左、右、內、外、側面、周圍、中央、水平、橫向、垂直、縱向、軸向、徑向、最上層或最下層等,僅是參考附加圖式的方向。此外,本發明所提到的單數形式“一”、“一個”和“所述”包括複數引用,除非上下文另有明確規定。數值範圍(如10%~11%的A)若無特定說明皆包含上、下限值(即10%≦A≦11%);數值範圍若未界定下限值(如低於0.2%的B,或0.2%以下的B),則皆指其下限值可能為0(即0%≦B≦0.2%)。上述用語是用以說明及理解本發明,而非用以限制本發明。 In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the preferred embodiments of the present invention will be specifically described below in conjunction with the accompanying drawings, which will be described in detail below. Furthermore, the terms of direction mentioned in the present invention, such as up, down, top, bottom, front, back, left, right, inner, outer, side, surrounding, center, horizontal, horizontal, vertical, longitudinal, axial, The radial direction, the uppermost layer or the lowermost layer, etc., are only the directions referring to the attached drawings. In addition, the singular forms "a", "an" and "said" mentioned in the present invention include plural references unless the context clearly dictates otherwise. The numerical range (such as 10%~11% A) includes upper and lower limits (
為了能快速且精確的量測光柵週期及繞射強度,請參考第1圖,本發明一實施例之一種光柵檢測裝置,其主要包含:一待測物載台2,水平可移動地設置於一第一滑軌1上,用以承載一基板3,其中該基板3具有一光柵結構;一雷射光源4,設置於該待測物載台2上方,用以提供一雷射光束Li,其中該雷射光束Li具有一波長,並且以一入射角入射到該基板 3上;一光偵測器5,可移動且可轉動地設置於一第二滑軌6上,用以捕捉從該基板3出射的一繞射光Df,其中該第二滑軌6與該第一滑軌1彼此平行;以及一數據處理器(未繪示),與該光偵測器5相連接,用以計算及輸出該光柵結構的一週期;其中該週期通過下列公式(I)來計算:
較佳的,該雷射光源4可以是一固態雷射,然不限於此,可依照所需要的檢測週期範圍來調整,一般而言,可檢測的最小週期為該雷射光束所具有的波長的0.5倍。在本發明的一實施例中,該光偵測器5較佳是一位置感應裝置(PSD,position sensitive device),能夠自動化追蹤繞射光強度最大的位置,因此可利用該數據處理器獲得該光偵測器5的位移距離x及轉動角度。較佳的,該繞射光Df進入該光偵測器5的角度等於或大致等於90度,如此可以控制每次測量時接收該繞射光的位置大致上是最大繞射光強度,以減少測量誤差。較佳的,該數據處理器亦可用來計算該 繞射光的一繞射效率,該繞射效率為該光偵測器所接收到的該繞射光的一能量除以該雷射光束的一出光能量。此外,在本發明的一實施例中,可另包含一擴束器,設置於該雷射光源4與該待測物載台2之間,可用於調整該雷射光束的直徑,並將該雷射光束Li聚焦於該待測物載台2的該基板3上。 Preferably, the
根據本發明的該光柵檢測裝置,可利用該第一滑軌1、該第二滑軌6以及該光偵測器5,達成可移動且可轉動地捕捉該繞射光的位置,並且控制該繞射光入射到該光偵測器5的角度趨近於垂直,同時搭配可以水平移動的該待測物載台2,由於該基板3通過該待測物載台2的帶動,能進行水平方向的二維位移(亦即可維持該基板3在一平面上進行移動),故可在固定的入射角下進行快速多點掃描,通過計算後可獲得基板3上各處的光柵週期與繞射效率,快速且精確的檢測到大面積光柵結構的均勻性,與傳統使用掃描式電子顯微鏡或原子力顯微鏡僅能檢測小範圍光柵結構且耗時較長的特性有很大的差異。 According to the grating detection device of the present invention, the first slide rail 1, the second slide rail 6 and the
請繼續參考第1圖,本發明另一實施例提供一種光柵檢測方法,其包含步驟:(1)提供一基板3,其中該基板3具有一光柵結構;(2)將該基板3置於一待測物載台2上;(3)將一雷射光束Li以一入射角入射到該基板3上;(4)使用一光偵測器5捕捉從該基板3出射的一繞射光Df;以及(5)使用一數據處理器計算及輸出該光柵結構的一週期。下面針對各步驟的進行詳細說明。 Please continue to refer to FIG. 1, another embodiment of the present invention provides a grating detection method, which includes the steps of: (1) providing a
在該光柵檢測方法中,首先是:(1)提供一基板3,其中該基板3具有一光柵結構。在本步驟中,該基板3做為一待測物,該光柵結 構可以具有一維週期性結構或二維週期性結構。 In the grating detection method, first of all: (1) Provide a
在該光柵檢測方法中,接著是:(2)將該基板3置於一待測物載台2上。在本步驟中,該待測物載台2水平可移動地設置在一第一滑軌1上。也就是說,該待測物載台2僅進行二維水平方向的位移,而不進行任何轉動或改變角度的行為。 In the grating detection method, the following is: (2) The
在該光柵檢測方法中,接著是:(3)將一雷射光束以一入射角入射到該基板3上。在本步驟中,該雷射光束具有一波長。該雷射光束是由一雷射光源4所提供,可例如是一固態雷射光源,然不限於此。 In the grating detection method, the following is: (3) A laser beam is incident on the
在該光柵檢測方法中,接著是:(4)使用一光偵測器5捕捉從該基板3出射的一繞射光。在本步驟中,該光偵測器5可移動且可轉動地設置於一第二滑軌6上,該第一滑軌1與該第二滑軌6彼此平行。也就是說,該光偵測器5可進行水平移動,且可轉動改變角度,以方便接收該繞射光。較佳的,該繞射光Df進入該光偵測器5的角度等於或大致等於90度,如此可以控制每次測量時接收該繞射光的位置是大致上是最大繞射光強度,以減少測量誤差。 In the grating detection method, the following is: (4) A
在該光柵檢測方法中,接著是:(5)使用一數據處理器計算及輸出該光柵結構的一週期,其中該週期通過下列公式(I)來計算:
上述公式(I)中,Λ代表該週期,λ代表該雷射光束的該波長,θi代表該入射角,x是該光偵測器補捉到該繞射光的位置處與該待測物載台2之間的一水平距離,以及h是該光偵測器捕捉到該繞射光的位置 處與該待測物載台2之間的一垂直高度。 In the above formula (I), Λ represents the period, λ represents the wavelength of the laser beam, θi represents the incident angle, and x is the position where the light detector captures the diffracted light and the object to be measured A horizontal distance between the
在本發明的一實施例中,該步驟(5)另包含一步驟:計算該繞射光Df的一繞射效率,其中該繞射效率為該光偵測器5所接收到的該繞射光Df的一能量除以該雷射光束Li的一出光能量。該出光能量所指的是該雷射光束Li從該雷射光源4發射時的初始能量。該繞射效率主要是與該光柵結構的填充因子與厚度有關,因此從該繞射效率可以得知該光柵結構的均勻度。 In an embodiment of the present invention, the step (5) further includes a step: calculating a diffraction efficiency of the diffracted light Df, wherein the diffraction efficiency is the diffracted light Df received by the
較佳的,該光偵測器5較佳是一位置感應裝置(PSD,position sensitive device),能夠自動化追蹤該繞射光的強度最大的位置,因此可利用該數據處理器獲得該光偵測器5的位移距離x及轉動角度。該數據處理器可例如是一電腦主機,使用自動化計算或檢測程式,來確認該光偵測器5捕捉到該繞射光的的位置。 Preferably, the
較佳的,上述步驟(4)-(5)可重複數次,每次移動該基板使該雷射光束聚焦在該光柵結構的不同位置上,然後得數個不同週期。因此,可應用在檢測同一片基板上不同部位的光柵結構的品質。 Preferably, the above steps (4)-(5) can be repeated several times, each time the substrate is moved to focus the laser beam on different positions of the grating structure, and then several different cycles are obtained. Therefore, it can be used to detect the quality of the grating structure at different locations on the same substrate.
為了使本發明的該光柵檢測裝置及檢測方法更為明確,並驗證本發明的該光柵檢測裝置的測量準確性,請參考下面實驗結果說明。 In order to make the grating detection device and the detection method of the present invention more clear, and to verify the measurement accuracy of the grating detection device of the present invention, please refer to the following experimental results.
請參考第2至4圖,其顯示了不同漸變週期區間的光柵結構,分別利用本發明的光柵檢測裝置、掃描式電子顯微鏡(SEM)以及原子力顯微鏡(AFM)量測的結果。如第2至4圖所示,不論週期變化如何,本發明的光柵檢測裝置相較於AFM均有趨近於SEM的精準度,甚至在週期209奈米~233奈米(第4圖)的漸變週期下,與AFM之間的差異更大,也說 明了本發明的光柵檢測裝置不僅可以快速掃描不同週期範圍之光柵結構,在精準度上也相當具有水準,非常適合應用在大尺寸基板上的光柵檢測。 Please refer to FIGS. 2 to 4, which show the grating structures of different gradation period intervals, respectively, the measurement results of the grating detection device, scanning electron microscope (SEM) and atomic force microscope (AFM) of the present invention. As shown in Figures 2 to 4, regardless of the period change, the grating detection device of the present invention has an accuracy close to that of SEM compared to AFM, even in the period of 209 nm to 233 nm (Figure 4). Under the gradual change period, the difference between it and AFM is greater, which also shows that the grating detection device of the present invention can not only quickly scan the grating structure of different cycle ranges, but also has a high level of accuracy, which is very suitable for application on large-sized substrates Raster detection.
上述實驗中,雷射光束具有一波長為355nm,該光偵測器捕捉到該繞射光的位置處與該待測物載台2之間的一垂直高度為147mm,該雷射光束的入射光角度為65度。該繞射系統的單點量測時間設定為0.6秒,然不限於此,該量測時間受到電腦(即數據處理器)與該光柵檢測裝置之間的通訊時間影響,若兩者之間的通訊速度越快,則單點量測時間可以設定得更短,使得整片基板(晶片)上的光柵結構所需掃描時間更短,更有效率。此外,可量測的光柵週期範圍為190~1000nm,此範圍受到所使用的雷射光束的波長所限制,使用不同的波長可決定光柵週期的量測範圍,因此,亦可整合一台以上的單波長雷射光源,以進行更大週期範圍的光柵量測。利用本案的繞射系統所量測到的光柵週期準確度為正負0.1nm或更佳。 In the above experiment, the laser beam has a wavelength of 355 nm, and the vertical height between the position where the light detector captures the diffracted light and the
相比之下,利用掃描式電子顯微鏡或原子力顯微鏡量測光柵結構特性上,主要是利用電子束或探針掃描出局部區域的光柵圖案,再利用人力方式在光柵圖案上拉線取出光柵週期和填充因子,以量測具有次微米光柵週期的光柵結構為例,兩種方式在單次量測下皆僅能在光柵面積約5x5μm下解析出光柵圖案,進而可進行人工拉線取出光柵參數,因此無法快速且有效地進行大面積光柵結構的檢測。在光柵參數的取出方面,由於人工拉線多少會造成些微的誤差,此誤差尤其在利用原子力顯微鏡量測光柵週期上更為明顯,因此在(第2至4圖)的漸變週期下,由原子力顯微鏡所量測出的光柵週期數據明顯與其他兩種方式偏離。 In contrast, using a scanning electron microscope or an atomic force microscope to measure the structural characteristics of the grating mainly uses electron beams or probes to scan out the grating pattern in a local area, and then manually pulls the grating pattern to extract the grating period and Fill factor, taking the measurement of grating structure with sub-micron grating period as an example, both methods can only parse out the grating pattern under the grating area of about 5x5μm in a single measurement, and then manually pull out the grating parameters. Therefore, it is not possible to quickly and efficiently detect large-area grating structures. Regarding the extraction of grating parameters, the manual pulling wire will cause a slight error, which is especially obvious in the measurement of the grating period using an atomic force microscope. Therefore, under the gradual change period (Figures 2 to 4), the atomic force The grating period data measured by the microscope clearly deviates from the other two methods.
雖然本發明已以較佳實施例揭露,然其並非用以限制本發明,任何熟習此項技藝之人士,在不脫離本發明之精神和範圍內,當可作各種更動與修飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in preferred embodiments, it is not intended to limit the present invention. Anyone who is familiar with this skill can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be as defined in the scope of the attached patent application.
1‧‧‧第一滑軌 1‧‧‧ First slide
2‧‧‧待測物載台 2‧‧‧Test object carrier
3‧‧‧基板 3‧‧‧ substrate
4‧‧‧雷射光源 4‧‧‧Laser light source
5‧‧‧光偵測器 5‧‧‧Light detector
6‧‧‧第二滑軌 6‧‧‧Second Slide
Li‧‧‧雷射光束 Li‧‧‧Laser beam
Df‧‧‧繞射光 Df‧‧‧diffracted light
h‧‧‧垂直高度 h‧‧‧Vertical height
x‧‧‧水平距離 x‧‧‧Horizontal distance
θi‧‧‧入射角 θi‧‧‧incidence angle
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