TW201943214A - Receiver and transmitter chips packaging structure and automotive radar detector device using same - Google Patents
Receiver and transmitter chips packaging structure and automotive radar detector device using same Download PDFInfo
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Abstract
本發明一種收發晶片封裝結構及車用雷達偵測裝置。該收發晶片封裝結構包括一重佈線層、一晶片組及一模封層,該晶片組具有一接收晶片、一發射晶片及一射頻處理晶片,透過該模封層覆蓋在該重佈線層的一側上,且包覆設置在該重佈線層一側上的該接收晶片、發射晶片及射頻處理晶片,且該射頻處理晶片透過該重佈線層具有的複數導線線路電性連接該接收晶片與該發射晶片。The invention relates to a package structure for transmitting and receiving chips and a radar detection device for a vehicle. The transceiver chip package structure includes a redistribution layer, a chipset, and a molding layer. The chipset has a receiving chip, a transmitting chip, and a radio frequency processing chip, and covers one side of the redistribution layer through the molding layer. The receiving chip, the transmitting chip, and the radio frequency processing chip disposed on one side of the redistribution layer are covered, and the radio frequency processing chip is electrically connected to the receiving chip and the transmitting device through a plurality of wire lines in the redistribution layer. Wafer.
Description
本發明係一種收發晶片封裝結構及車用雷達偵測裝置,尤指一種可達到提升發射效率及提高晶片效能的收發晶片封裝結構及車用雷達偵測裝置。The present invention relates to a package structure for transmitting and receiving chips and a radar detection device for vehicles, and more particularly to a package structure for receiving and transmitting wafers and a radar detection device for vehicles that can achieve enhanced transmission efficiency and chip performance.
在科技的突飛猛進下,許多日常生活所需的產品技術也伴隨著大幅提升,尤其藉著半導體技術的成熟,更造就了車用電子產品的出現及演進,改善了早期駕駛者所駕駛的車輛,使得現今的車輛不僅具備「行」的功能,更加注許多創新的科技技術在車輛上,以對現今車輛及駕駛作出更進一步的安全防護,從早期的防盜系統、倒車雷達,到現今的障礙物或行人辨識、車外環景影像偵測、自動駕駛等相關技術,皆有利於駕駛的行車安全。 而常見的防護系統,如自動巡航控制、盲點偵測系統、自動煞車系統、前/後方追撞預警系統、車道偏移偵測系統等,通常係採用微波形式的調頻連續波(Frequency-Modulation Continuous Wave,FMCW) 雷達系統進行目標物的偵測,這類偵測是由雷達系統發出毫米波訊號並接收目標物所反射的訊號,進而計算出目標物相對於雷達系統的速度、角度、距離等資訊。並習知的雷達系統包含一接收模組、一發射模組、一壓控振盪器及一控制器,該接收模組、發射模組、壓控振盪器及控制器皆是為各自獨立分開的元件,且各模組內的各晶片是獨立設置在各自模組內的電路板上,例如接收模組的接收晶片設置在其內的電路板、發射模組的發射晶片設置在其內的電路板、壓控振盪器的壓控振盪晶片設置在其內的電路板,且業者為了製造上的便利,會將天線(如一接收天線或一發射天線)整合於晶片(如接收晶片或發射晶片)上,此方式雖可達到製成便利,但卻會造成發射效率不佳,且發射天線的發射功率只在5瓦特(Watt)以下,以導致低功率發射的問題。此外,由於各模組其內的晶片(如接收晶片、發射晶片及壓控振盪晶片)都是單一同樣製程製造的關係,使得各晶片特性也不好。With the rapid advancement of science and technology, many product technologies required for daily life have also been accompanied by substantial improvements. Especially through the maturity of semiconductor technology, the emergence and evolution of automotive electronic products have been improved, and the vehicles driven by early drivers have been improved. Make today's vehicles not only have the function of "walking", but also pay more attention to many innovative technologies and technologies on the vehicles to further protect the current vehicles and driving, from the early anti-theft system, back-up radar, to today's obstacles. Relevant technologies such as pedestrian recognition, image detection outside the car, and autonomous driving are all conducive to driving safety. And common protection systems, such as automatic cruise control, blind spot detection system, automatic braking system, front / rear chase warning system, lane shift detection system, etc., are usually frequency-modulated continuous waves in the form of microwaves (Frequency-Modulation Continuous Wave (FMCW) radar system detects targets. This type of detection is a millimeter wave signal sent by the radar system and receives the signal reflected by the target, and then calculates the speed, angle, distance, etc. of the target relative to the radar system. Information. The conventional radar system includes a receiving module, a transmitting module, a voltage-controlled oscillator, and a controller. The receiving module, the transmitting module, the voltage-controlled oscillator, and the controller are all independently separated from each other. Components, and each chip in each module is independently arranged on the circuit board in the respective module, for example, a circuit board in which the receiving chip of the receiving module is disposed, and a circuit in which the transmitting chip of the transmitting module is disposed. The circuit board on which the voltage-controlled oscillator chip of the board and the voltage-controlled oscillator is set, and the industry will integrate the antenna (such as a receiving antenna or a transmitting antenna) into the chip (such as a receiving chip or a transmitting chip) for manufacturing convenience. In the above, although this method can be made conveniently, it will cause poor transmission efficiency, and the transmitting power of the transmitting antenna is only less than 5 Watts, which causes the problem of low-power transmission. In addition, since the chips (such as the receiving chip, the transmitting chip, and the voltage-controlled oscillator chip) in each module are manufactured in a single process, the characteristics of each chip are not good.
本發明之一目的在提供一種可達到提升發射效率的收發晶片封裝結構及車用雷達偵測裝置。 本發明之另一目的在提供一種具有提高發射功率的收發晶片封裝結構及車用雷達偵測裝置。 本發明之另一目的在提供一種透過一接收晶片、一發射晶片及一射頻處晶片整合封裝成為單一晶片的結構,使得可達到提高晶片效能的收發晶片封裝結構及車用雷達偵測裝置。 為達上述目的,本發明係在提供一種收發晶片封裝結構,包括一重佈線層、一模封層及一晶片組,該重佈線層具有複數導電線路、一介電層及複數導電體,該等導電線路設於該介電層中,該介電層具有一第一側及一第二側,該等導電體設於該介電層的第二側上,且與對應該等導電線路的一端電性連接,該晶片組具有一接收晶片、一發射晶片及一射頻處理晶片,該接收晶片與該發射晶片及該射頻處理晶片設置在該介電層的第一側,且與該等導電線路的另一端電性連接,並該射頻處理晶片透過該等導線線路電性連接該接收晶片與該發射晶片,該模封層係設於該介電層的第一側上,且包覆該接收晶片與該發射晶片及該射頻處理晶片;透過本發明的結構設計,使得可達到提升發射效率及提高晶片效能,且還可達到提高發射功率的效果。 本發明另提供一種車用雷達偵測裝置,包括一收發晶片封裝結構、一基板及一控制晶片,該收發晶片封裝結構包含一重佈線層、一模封層及一晶片組,該重佈線層具有複數導電線路、一介電層及複數導電體,該等導電線路設於該介電層中,該介電層具有一第一側及一第二側,該等導電體設於該介電層的第二側上,且與對應該等導電線路的一端電性連接,該晶片組具有一接收晶片、一發射晶片及一射頻處理晶片,該接收晶片與該發射晶片及該射頻處理晶片設置在該介電層的第一側,且與該等導電線路的另一端電性連接,並該射頻處理晶片透過該等導線線路電性連接該接收晶片與該發射晶片,該模封層係設於該介電層的第一側上,且包覆該接收晶片與該發射晶片及該射頻處理晶片,該基板係選擇設於對應該重佈線層或該模封層的一側,該基板具有至少一第一天線、至少一第二天線、複數導線及複數接觸點係與對應該重佈線層的該等導電體相電性連接,該等導線設於該基板中,且電性連接設於該基板之一側的該等接觸點,該第一、二天線設於該基板的一側,且透過該等導線經該等接觸點電性連接對應該接收晶片與該發射晶片,該控制晶片設於該基板的一側,並透過該等導線經該等接觸點電性連接對應該接收晶片與該射頻處理晶片;透過本發明的裝置設計,使得可達到提升發射效率及提高晶片效能,且還可達到高功率發射的效果。It is an object of the present invention to provide a package structure for transmitting and receiving chips and a radar detection device for a vehicle, which can improve transmission efficiency. Another object of the present invention is to provide a transmitting and receiving chip package structure with improved transmission power and a vehicle radar detection device. Another object of the present invention is to provide a receiving chip, a transmitting chip, and a radio frequency integrated chip package into a single chip structure, so as to achieve a chip receiving and receiving package structure and a vehicle radar detection device capable of improving chip performance. To achieve the above object, the present invention is to provide a package structure for transmitting and receiving chips, including a redistribution layer, a molding layer, and a chipset. The redistribution layer has a plurality of conductive lines, a dielectric layer, and a plurality of conductors. A conductive circuit is disposed in the dielectric layer, the dielectric layer has a first side and a second side, and the conductors are disposed on the second side of the dielectric layer and correspond to an end corresponding to the conductive circuits. Electrically connected, the chipset has a receiving chip, a transmitting chip, and a radio frequency processing chip. The receiving chip, the transmitting chip, and the radio frequency processing chip are disposed on a first side of the dielectric layer, and are connected to the conductive lines. The other end is electrically connected, and the RF processing chip is electrically connected to the receiving chip and the transmitting chip through the wire lines. The molding layer is disposed on the first side of the dielectric layer and covers the receiving layer. The chip and the transmitting chip and the radio-frequency processing chip; through the structural design of the present invention, it is possible to achieve the improvement of the transmission efficiency and the chip efficiency, and also the effect of the improvement of the transmission power. The invention also provides a radar detection device for a vehicle, which includes a transceiver chip packaging structure, a substrate and a control chip. The transceiver chip packaging structure includes a redistribution layer, a mold encapsulation layer and a chipset. The redistribution layer has A plurality of conductive lines, a dielectric layer, and a plurality of conductors, the conductive lines are provided in the dielectric layer, the dielectric layer has a first side and a second side, and the conductors are provided on the dielectric layer The second side of the chip is electrically connected to one end corresponding to the conductive lines. The chipset includes a receiving chip, a transmitting chip, and a radio frequency processing chip. The receiving chip is disposed on the transmitting chip and the radio frequency processing chip. The first side of the dielectric layer is electrically connected to the other end of the conductive lines, and the radio frequency processing chip is electrically connected to the receiving chip and the transmitting chip through the wire lines. The molding layer is disposed on the On the first side of the dielectric layer, and covering the receiving chip, the transmitting chip, and the radio frequency processing wafer, the substrate is selected on a side corresponding to the redistribution layer or the molding layer, and the substrate has at least The first antenna, the at least one second antenna, the plurality of wires, and the plurality of contact points are electrically connected to the conductors corresponding to the redistribution layer. The wires are provided in the substrate, and the electrical connections are provided at The contact points on one side of the substrate, the first and second antennas are disposed on one side of the substrate, and are electrically connected to the receiving chip and the transmitting chip through the wires through the contact points, the control chip It is located on one side of the substrate and is electrically connected to the receiving chip and the radio frequency processing chip through the wires through the contact points. Through the device design of the present invention, it is possible to improve the transmission efficiency and improve the chip performance, and It can also achieve the effect of high power transmission.
本發明之上述目的及其結構與功能上的特性,將依據所附圖式之較佳實施例予以說明。 本發明係一種收發晶片封裝結構及車用雷達偵測裝置。請參閱第1圖為本發明之第一實施例之收發晶片封裝結構之立體組合示意圖;第1A圖為本發明之第一實施例之收發晶片封裝結構之組合剖面示意圖。該收發晶片封裝結構1於本實施例用於一車用雷達偵測裝置2(如參考第2圖式),但並不侷限於此,於具體實施時,也可應用於例如醫療掃描系統上。該收發晶片封裝結構1包括一重佈線層10(Redistribution laver,簡稱RDL)、一模封層14及一晶片組12,該重佈線層10具有複數導電線路102、一介電層103、複數開口101及複數導電體104,該等開口101係從該介電層103的一第一側1031(即頂側)貫穿至一第二側1032(即底側)所構成,該等導電線路102為一金屬導線,該等導電線路102的材質為如金、鋁、銅、鎢、鈦、氮化鈦或其組合,該等導電線路102設於該介電層103中,且容設在對應的介電層103的該等開口101內,並該介電層103為一薄膜聚合物,例如苯並環丁稀(Benzocyclobutene, BCB)、聚亞醯胺(polyimind, PI),或其他有機聚合物,或一有機材料,例如聚亞醯胺(polyimide, PI),或無機材料,例如氮化矽、氧化矽或類似的材料。 該介電層103具有該第一側1031及該第二側1032,該等導電體104設於該介電層103的第二側1032(即底側)上,且與對應該等導電線路102的一端電性連接,並該晶片組12具有一接收晶片121、一發射晶片122及一射頻處理晶片123,該接收晶片121用以接收毫米波訊號,該發射晶片122用以發射毫米波訊號,該接收晶片121與發射晶片122及射頻處理晶片123設置在該介電層103的第一側1031(即頂側),且與該等導電線路102的另一端電性連接,該射頻處理晶片123係透過該等導電線路102電性連接接收晶片121與發射晶片122。其中前述接收晶片121、發射晶片122及射頻處理晶片123這些晶片可任意合適製程製造,例如採用一矽基氮化鎵(GaN-on-Si)製程、碳化矽基氮化鎵(GaN-on-SiC)製程、矽鍺-互補式金屬氧化物半導體(SiGe CMOS)製程、砷化鎵(GaAs )製程或射頻-互補式金屬氧化物半導體(RF CMOS)製程製造,而在本實施例的接收晶片121及射頻處理晶片123採用RF CMOS製程製造,該發射晶片122則採用SiGe CMOS製程製造。在一實施例,該發射晶片122可改設計採用GaAs 製程或GaN-on-Si製程製造,該接收晶片121及射頻處理晶片123採用RF CMOS製程製造。 另外,前述接收晶片121與發射晶片122分別的接收與發射為24GHZ(赫芝)、77 GHZ(赫芝)或120 GHZ(赫芝)中心頻率(Center Frequency)的毫米波訊號,且24GHZ、77 GHZ或120 GHZ中心頻率的頻寬在-10 GHZ(赫芝)~+10 GHZ(赫芝)。 請參考第1A圖,該等導電體104於本實施例表示為一焊接球(如金屬球體),該等導電體104透過該等導電線路102延伸連接至對應該接收晶片121、該發射晶片122及射頻處理晶片123,以令該等導電體104與對應該接收晶片121、該發射晶片122及射頻處理晶片123相電性連接。該模封層14的材料可為如一環氧樹脂,且前述所舉之模封材料僅為例示,並非用以限制本發明,並該模封層14設於該介電層103的第一側1031(即頂側)上,於本實施例的模封層14係以如鑄模灌膠 (Molding)的方式覆蓋整個在該介電層103的第一側1031,且包覆整個該接收晶片121與該發射晶片122及該射頻處理晶片123,以封住該晶片組12,使晶片組12於該重佈線層10被模封層14封裝構成所述收發晶片封裝結構1。所以本發明的收發晶片封裝結構1是利用一扇出晶圓級封裝(Fan-Out Wafer Level Packaging,FOWLP)技術將不同製成出的多晶片(即接收晶片121與發射晶片122及射頻處理晶片123)整合封裝成單一晶片封裝結構(即收發晶片封裝結構1),使得有效達到提高各晶片效能,並因該接收晶片121與發射晶片122本身上皆未與任何天線整合一起(即接收天線(或發射天線)與接收晶片121(或發射晶片122)分開),藉以有效提高發射功率的效果,例如該發射晶片122的發射功率產生6瓦特以上或15瓦特~30瓦特。其中該接收晶片121與發射晶片122及射頻處理晶片123的外表面被該模封層14包覆的厚度為100um(微米)~700um(微米),透過該模封層14包覆晶片組12表面,使得該晶片組12表面殼達到平整化的效果。 在一實施例,該等導電體104改設計為一金屬(如銅或金)的焊接墊。 因此,藉由本發明的收發晶片封裝結構1的設計,使得可達到提升發射效率及提高晶片效能,且還可達到提高發射功率的效果。 請參考第2圖為本發明之第二實施例之車用雷達偵測裝置之立體組合示意圖;第2A圖為本發明之第二實施例之車用雷達偵測裝置之組合剖面示意圖;第3A圖為本發明之第二實施例之車用雷達偵測裝置之方塊示意圖;第3B圖為本發明之第二實施例之車用雷達偵測裝置之另一方塊示意圖。如圖所示,該車用雷達偵測裝置2包括一收發晶片封裝結構1、一基板21及一控制晶片24,該本實施例的收發晶片封裝結構1的結構及連接關係及功效與前述第一實施例的收發晶片封裝結構1的結構及連接關係及功效相同,故不在重新贅述。該基板21於本實施例表示為一印刷電路板,該基板21為玻纖環氧(FR-4)基板、聚苯醚(polyphenyleneoxide,PPO)基板、聚四氟乙烯( Polytetrafluoroethylene,PTFE) 基板。在一實施例,該基板21可選擇為一玻璃基板。其中該本實施例的重佈線層10的介電層103之第二側1032上的該等導電體104為焊接球(如金屬球體),且該等導電體104係以球狀陣列(或稱球格陣列,BGA)的方式排列設於該介電層103的第二側1032上說明,但並不侷限於此。 並該基板21設於對應該重佈線層10的一側,且位於該重佈線層10的介電層103的第二側1032下方,該基板21具有至少一第一天線22、至少一第二天線23、複數導線211及複數接觸點213,該等接觸點213為一焊墊,該等接觸點213形成在該基板21的一側上,且與對應該重佈線層10的該等導電體104相電性連接,並該等導電體104位於該介電層103與基板21之間,該等導線211為一金屬(如銅或金)導線211,該等導線211設於該基板21中,且電性連接對應該等接觸點213,而該第一、二天線22、23於本實施例表示為一陣列天線設於面對該介墊層的該基板21的一側,該第一、二天線22、23透過該等導線211經該等接觸點213分別電性連接對應該接收晶片121與該發射晶片122,於本實施例的第一天線22連接的該等接觸點213直接接觸對應該接收晶片121連接的該等導電體104形成訊號連接(或電性連接),該第二天線23連接的接觸點213直接接觸對應該發射晶片122連接的導電體104形成訊號連接(或電性連接)。 該控制晶片24為一微處理器(MCU)或一處理器(CPU)或一數位信號處理器(DSP),該控制晶片24設於該基板21的一側,並透過該等導線211經該等接觸點213電性連接對應該接收晶片121與該射頻處理晶片123,於本實施例的控制晶片24連接的該等接觸點213是直接接觸對應該接收晶片121與該射頻處理晶片123連接的該等導電體104形成訊號連接(或電性連接)。並該接收晶片121具有至少一接收電路1211及一訊號處理電路1212,該接收電路1211與訊號處理電路1212於本實施表示為1個接收電路1211與1個訊號處理電路1212對應連接1個第一天線22,該訊號處理電路1212係電性連接該接收電路1211及射頻處理晶片123,且該訊號處理電路1212包含一混頻器1212a,該混頻器1212a於本實施例是作為一降頻器使用,但並不侷限於此,且該混頻器1212a用以處理該接收電路1211接收該第一天線22傳送的一接收訊號(即外部物體的反射訊號)及處理該射頻處理晶片123傳送的一本地振盪訊號(LO),令該混頻器1212a將接收的接收訊號與本地振盪訊號混頻,且將訊號降頻處理後產生一訊號接收結果(即為一中頻訊號)給該控制晶片24,令該控制晶片24根據接收該訊號接收結果可以判斷外部物體之位移、速度及距離,以達到雷達偵測的功效。 該發射晶片122具有至少一發射電路1221,該發射電路1221於本實施表示為1個發射電路1221對應連接1個第二天線23,該射頻處理晶片123具有一電壓控制震盪電路1231(voltage-controlled oscillator,VCO),該電壓控制震盪電路1231分別電性連接訊號處理電路1212的混頻器1212a及發射電路1221,用以提供該本地振盪訊號至該訊號處理電路1212,及提供一偵測訊號。並該控制晶片24控制該電壓控制震盪電路1231輸出該偵測訊號至該發射電路1221,令該發射電路1221透過該第二天線23發射該偵測訊號。其中前述偵測訊號與接收訊號為前述毫米波訊號。其中於具體實施時,該控制晶片24電性連接一控制器區域網路匯流排(Controller Area Network BUS, CAN BUS)系統(圖中未示),令該控制區域網路匯流排系統根據該控制晶片24傳送的一通知訊號(如通知外部物體離本車距離太近)控制汽車減速或閃爍警示燈。 此外,本實施例的第一、二天線22、23的數量與接收電路1211及發射電路1221的數量不侷限於上述1個,且前述第一、二天線22、23的數量與該接收晶片121的接收電路1211及該發射晶片122的發射電路1221的數量是相互匹配,並於具體實施時,使用者可以事先根據毫米波雷達偵側的精準度及偵測範圍大小及裝設位置需求改設計調整該第一、二天線22、23及接收電路1211與發射電路1221的數量,例如參閱第3A圖示,1個接收電路1211與1個發射電路1221搭配1個第一天線22與1個第二天線23構成1組雷達偵測器,或參閱第3B圖示,3個接收電路1211與3個發射電路1221搭配3個第一天線22與3個第二天線23構成3組雷達偵測器,依此類推。 並本實施例的第一天線22及第二天線23的接收與發射為24GHZ(赫芝)、77 GHZ(赫芝)或120 GHZ(赫芝)中心頻率的毫米波訊號,且24GHZ、77 GHZ或120 GHZ中心頻率的頻寬在-10 GHZ(赫芝)~+10 GHZ(赫芝)。其中該接收訊號與偵測訊號為前述毫米波訊號。 因此,藉由本發明的車用雷達偵測裝置2的設計,使得可達到提升發射效率及提高晶片效能,且還可達到提高發射功率的效果。 請參考第4A圖為本發明之第三實施例之車用雷達偵測裝置之立體組合示意圖;第4B圖為本發明之第三實施例之車用雷達偵測裝置之組合剖面示意圖。該本實施例的車用雷達偵測裝置2的結構及連結關係及功效大致與前述第二實施例的車用雷達偵測裝置2的結構及連結關係及功效相同,而本實施例主要是將前述第一實施例的基板21設於對應該重佈線層10的一側及該等導電體104為焊接球(如金屬球體),改設計為該基板21設於對應該模封層14的一側及該等導電體104為金屬(如銅或金)的焊接墊。 並該基板21位於該模封層14下方,且該基板21的一側接觸面對該模封層14,該介電層103之第二側1032的該等導電體104透過複數焊接線25電性連接對應的該等接觸點213,於本實施例的第一天線22連接的該等接觸點213透過該等焊接線25延伸連接至對應該接收晶片121連接的該等導電體104形成訊號連接(或電性連接),該控制晶片24連接的該等接觸點213透過該等焊接線25延伸連接至對應該接收晶片121與該射頻處理晶片123連接的該等導電體104形成訊號連接(或電性連接),該第二天線23連接的接觸點213透過該等焊接線25其中一焊接線25延伸連接至對應該發射晶片122連接的導電體104形成訊號連接。因此,使得有效達到提升發射效率及提高晶片效能,且還可達到提高發射功率的效果。The above-mentioned object of the present invention and its structural and functional characteristics will be described based on the preferred embodiments of the drawings. The invention relates to a package structure for transmitting and receiving chips and a radar detection device for a vehicle. Please refer to FIG. 1 for a three-dimensional assembly schematic diagram of a transceiver chip packaging structure according to a first embodiment of the present invention; FIG. 1A is a schematic cross-sectional schematic diagram for a transceiver chip packaging structure of a first embodiment of the present invention. The transceiver chip packaging structure 1 is used in this embodiment for a vehicle radar detection device 2 (as shown in FIG. 2), but it is not limited to this. In specific implementation, it can also be applied to, for example, a medical scanning system. . The transceiving chip package structure 1 includes a redistribution layer 10 (Redistribution laver, RDL for short), a molding layer 14 and a chipset 12. The redistribution layer 10 has a plurality of conductive lines 102, a dielectric layer 103, and a plurality of openings 101 And a plurality of conductors 104, the openings 101 are formed by penetrating from a first side 1031 (ie, the top side) of the dielectric layer 103 to a second side 1032 (ie, the bottom side), and the conductive lines 102 are a Metal wires. The conductive lines 102 are made of materials such as gold, aluminum, copper, tungsten, titanium, titanium nitride, or a combination thereof. The conductive lines 102 are disposed in the dielectric layer 103 and are disposed in corresponding dielectrics. Within the openings 101 of the electrical layer 103, and the dielectric layer 103 is a thin film polymer, such as Benzocyclobutene (BCB), polyimind (PI), or other organic polymers, Or an organic material, such as polyimide (PI), or an inorganic material, such as silicon nitride, silicon oxide, or similar materials. The dielectric layer 103 has the first side 1031 and the second side 1032. The conductors 104 are disposed on the second side 1032 (ie, the bottom side) of the dielectric layer 103, and correspond to the conductive lines 102. One end of the chipset 12 is electrically connected, and the chipset 12 has a receiving chip 121, a transmitting chip 122, and a radio frequency processing chip 123. The receiving chip 121 is used for receiving millimeter wave signals, and the transmitting chip 122 is used for transmitting millimeter wave signals. The receiving chip 121, the transmitting chip 122, and the RF processing chip 123 are disposed on the first side 1031 (ie, the top side) of the dielectric layer 103, and are electrically connected to the other ends of the conductive lines 102. The RF processing chip 123 The receiving chip 121 and the transmitting chip 122 are electrically connected through the conductive lines 102. The aforementioned receiving chip 121, transmitting chip 122, and RF processing chip 123 can be manufactured by any suitable process, for example, a GaN-on-Si process, a GaN-on-Si SiC) process, silicon germanium-complementary metal oxide semiconductor (SiGe CMOS) process, gallium arsenide (GaAs) process or radio frequency-complementary metal oxide semiconductor (RF CMOS) process, and the receiving chip in this embodiment 121 and the RF processing chip 123 are manufactured using an RF CMOS process, and the transmitting chip 122 is manufactured using a SiGe CMOS process. In one embodiment, the transmitting chip 122 can be redesigned and manufactured using a GaAs process or a GaN-on-Si process, and the receiving chip 121 and the RF processing chip 123 are manufactured using an RF CMOS process. In addition, the aforementioned receiving chip 121 and transmitting chip 122 respectively receive and transmit 24 GHz, Hertz, or 120 GHz GHz frequencies, and 24 GHz and 77 millimeter wave signals. The bandwidth of the center frequency of GHZ or 120 GHZ is from -10 GHZ (Hertz) to +10 GHZ (Hertz). Please refer to FIG. 1A. In this embodiment, the electrical conductors 104 are represented as a solder ball (such as a metal sphere). The electrical conductors 104 are extended to the corresponding receiving chip 121 and the transmitting chip 122 through the conductive lines 102. And the RF processing chip 123, so that the conductors 104 are electrically connected to the corresponding receiving chip 121, the transmitting chip 122 and the RF processing chip 123. The material of the mold encapsulation layer 14 may be an epoxy resin, and the mold encapsulation material mentioned above is only an example, and is not intended to limit the present invention. The mold encapsulation layer 14 is disposed on the first side of the dielectric layer 103. On 1031 (that is, the top side), the molding layer 14 in this embodiment covers the entire first side 1031 of the dielectric layer 103 in a manner such as molding, and covers the entire receiving chip 121. The transmitting chip 122 and the radio frequency processing chip 123 are used to seal the chip group 12, so that the chip group 12 is encapsulated in the redistribution layer 10 by the molding layer 14 to constitute the transceiver chip package structure 1. Therefore, the transceiving chip package structure 1 of the present invention uses a Fan-Out Wafer Level Packaging (FOWLP) technology to multi-fabricate multiple chips (that is, the receiving chip 121 and the transmitting chip 122 and the RF processing chip). 123) Integrated packaging into a single chip packaging structure (ie, transceiver chip packaging structure 1), which effectively improves the performance of each chip, and because the receiving chip 121 and the transmitting chip 122 are not integrated with any antenna (the receiving antenna ( (Or transmitting antenna) is separated from the receiving chip 121 (or transmitting chip 122), so as to effectively increase the transmission power effect. For example, the transmitting power of the transmitting chip 122 generates more than 6 watts or 15 watts to 30 watts. The outer surfaces of the receiving wafer 121, the transmitting wafer 122, and the RF processing wafer 123 are covered by the mold layer 14 to a thickness of 100um (micrometer) to 700um (micrometer), and the surface of the wafer group 12 is covered by the mold layer 14 , So that the surface shell of the chipset 12 achieves a flattening effect. In one embodiment, the conductive bodies 104 are redesigned as soldering pads of a metal (such as copper or gold). Therefore, with the design of the transceiving chip package structure 1 of the present invention, it is possible to achieve the improvement of the transmission efficiency and the chip efficiency, and also the effect of the improvement of the transmission power. Please refer to FIG. 2 for a schematic diagram of a three-dimensional assembly of a vehicle radar detection device according to a second embodiment of the present invention; FIG. 2A is a schematic cross-sectional view of a vehicle radar detection device for a second embodiment of the present invention; FIG. 3 is a block diagram of a vehicle radar detection device according to a second embodiment of the present invention; FIG. 3B is another block diagram of a vehicle radar detection device according to a second embodiment of the present invention. As shown in the figure, the vehicle radar detection device 2 includes a transceiver chip package structure 1, a substrate 21, and a control chip 24. The structure, connection relationship, and efficacy of the transceiver chip package structure 1 of this embodiment are the same as those described above. The structure, connection relationship, and effect of the transceiver chip package structure 1 of an embodiment are the same, so they will not be described again. The substrate 21 is shown as a printed circuit board in this embodiment. The substrate 21 is a glass fiber epoxy (FR-4) substrate, a polyphenylene oxide (PPO) substrate, and a polytetrafluoroethylene ( PTFE ) substrate. In one embodiment, the substrate 21 may be selected as a glass substrate. The electrical conductors 104 on the second side 1032 of the dielectric layer 103 of the redistribution layer 10 in this embodiment are solder balls (such as metal spheres), and the electrical conductors 104 are in a spherical array (or called The ball grid array (BGA) arrangement is described on the second side 1032 of the dielectric layer 103, but it is not limited thereto. The substrate 21 is disposed on a side corresponding to the redistribution layer 10 and is located below the second side 1032 of the dielectric layer 103 of the redistribution layer 10. The substrate 21 has at least one first antenna 22 and at least one first antenna 22. Two antennas 23, a plurality of conductors 211, and a plurality of contact points 213. The contact points 213 are solder pads. The contact points 213 are formed on one side of the substrate 21 and correspond to the corresponding ones of the redistribution layer 10. The conductors 104 are electrically connected, and the conductors 104 are located between the dielectric layer 103 and the substrate 21. The wires 211 are a metal (such as copper or gold) wires 211, and the wires 211 are provided on the substrate. 21, and the electrical connection corresponds to the contact points 213, and the first and second antennas 22 and 23 are shown in this embodiment as an array antenna provided on a side of the substrate 21 facing the interlayer, the The first and second antennas 22 and 23 are electrically connected to the receiving chip 121 and the transmitting chip 122 through the wires 211 and the contact points 213, respectively. The contact points connected to the first antenna 22 in this embodiment 213 directly contacts the electrical conductors 104 corresponding to the receiving chip 121 to form a signal connection (or electrical connection). The contact point 213 connected to the two antennas 23 directly contacts the conductor 104 corresponding to the transmitting chip 122 to form a signal connection (or electrical connection). The control chip 24 is a microprocessor (MCU) or a processor (CPU) or a digital signal processor (DSP). The control chip 24 is disposed on one side of the substrate 21 and passes through the wires 211 through the The contact points 213 are electrically connected to the receiving chip 121 and the radio frequency processing chip 123. The contact points 213 connected to the control chip 24 in this embodiment are in direct contact with the corresponding receiving chip 121 and the radio frequency processing chip 123. The electrical conductors 104 form a signal connection (or electrical connection). The receiving chip 121 has at least a receiving circuit 1211 and a signal processing circuit 1212. The receiving circuit 1211 and the signal processing circuit 1212 are shown in this embodiment as a receiving circuit 1211 and a signal processing circuit 1212 correspondingly connected to a first Antenna 22, the signal processing circuit 1212 is electrically connected to the receiving circuit 1211 and the RF processing chip 123, and the signal processing circuit 1212 includes a mixer 1212a, which is used as a frequency reduction in this embodiment. The mixer 1212a is used, but is not limited to this, and the mixer 1212a is used to process the receiving circuit 1211 to receive a reception signal (ie, a reflection signal from an external object) transmitted by the first antenna 22 and to process the radio frequency processing chip 123 A local oscillation signal (LO) transmitted causes the mixer 1212a to mix the received reception signal with the local oscillation signal, and after the signal is down-converted, a signal reception result (that is, an intermediate frequency signal) is given to the mixer. The control chip 24 enables the control chip 24 to judge the displacement, speed, and distance of an external object according to the reception result of the signal, so as to achieve the effect of radar detection. The transmitting chip 122 has at least one transmitting circuit 1221. The transmitting circuit 1221 is shown in this embodiment as a transmitting circuit 1221 corresponding to a second antenna 23. The radio frequency processing chip 123 includes a voltage-controlled oscillator circuit 1231 (voltage- controlled oscillator (VCO), the voltage controlled oscillator circuit 1231 is electrically connected to the mixer 1212a and the transmitting circuit 1221 of the signal processing circuit 1212, respectively, for providing the local oscillation signal to the signal processing circuit 1212, and providing a detection signal . And the control chip 24 controls the voltage control oscillation circuit 1231 to output the detection signal to the transmitting circuit 1221, so that the transmitting circuit 1221 transmits the detection signal through the second antenna 23. The aforementioned detection signal and the received signal are the aforementioned millimeter wave signals. In specific implementation, the control chip 24 is electrically connected to a Controller Area Network BUS (CAN BUS) system (not shown), so that the control area network bus system is controlled according to the control. A notification signal transmitted by the chip 24 (such as notifying that an external object is too close to the vehicle) controls the vehicle to slow down or flash a warning light. In addition, the number of the first and second antennas 22 and 23 and the number of the receiving circuits 1211 and the transmitting circuit 1221 are not limited to the above one, and the number of the first and second antennas 22 and 23 and the receiving chip 121 The number of the receiving circuits 1211 and the transmitting circuits 1221 of the transmitting chip 122 are matched with each other. In specific implementation, the user can modify the design according to the accuracy of the detection side of the millimeter-wave radar and the size of the detection range and the installation location. Adjust the number of the first and second antennas 22, 23, the receiving circuit 1211, and the transmitting circuit 1221. For example, referring to the figure 3A, one receiving circuit 1211 and one transmitting circuit 1221 are matched with one first antenna 22 and one The second antenna 23 constitutes a group of radar detectors, or referring to the figure 3B, the three receiving circuits 1211 and the three transmitting circuits 1221 are configured with three first antennas 22 and three second antennas 23 to form three groups. Radar detector, and so on. The receiving and transmitting of the first antenna 22 and the second antenna 23 in this embodiment are millimeter wave signals of the center frequency of 24GHZ (Hertz), 77 GHZ (Hertz) or 120 GHZ (Hertz), and the 24GHZ, The center frequency of 77 GHZ or 120 GHZ is between -10 GHZ (Hertz) to +10 GHZ (Hertz). The received signal and the detected signal are the aforementioned millimeter wave signals. Therefore, by the design of the vehicle radar detection device 2 of the present invention, it is possible to achieve the effect of improving the transmission efficiency and the chip performance, and also the effect of increasing the transmission power. Please refer to FIG. 4A for a schematic three-dimensional assembly diagram of a vehicle radar detection device according to a third embodiment of the present invention; FIG. 4B is a schematic cross-section diagram for a vehicle radar detection device of a third embodiment of the present invention. The structure, connection relationship, and effect of the vehicle radar detection device 2 of this embodiment are substantially the same as the structure, connection relationship, and effect of the vehicle radar detection device 2 of the second embodiment described above, and this embodiment mainly uses The substrate 21 of the foregoing first embodiment is disposed on a side corresponding to the redistribution layer 10 and the conductive bodies 104 are solder balls (such as metal balls). The design is changed such that the substrate 21 is disposed on a side corresponding to the molding layer 14. The side and the conductors 104 are solder pads of metal (such as copper or gold). And the substrate 21 is located under the molding layer 14, and one side of the substrate 21 is in contact with the molding layer 14. The electrical conductors 104 on the second side 1032 of the dielectric layer 103 are electrically connected through a plurality of bonding wires 25. The contact points 213 corresponding to the semiconductor connection are connected. The contact points 213 connected to the first antenna 22 of this embodiment are extended to the conductors 104 corresponding to the connection of the receiving chip 121 through the welding wires 25 to form a signal. Connection (or electrical connection), the contact points 213 connected by the control chip 24 are extended through the bonding wires 25 to the conductors 104 corresponding to the receiving chip 121 and the RF processing chip 123 to form a signal connection ( (Or electrical connection), the contact point 213 connected to the second antenna 23 is extended through one of the bonding wires 25 to the conductor 104 corresponding to the connection of the transmitting chip 122 to form a signal connection. Therefore, it is effective to achieve the improvement of transmission efficiency and chip efficiency, and also the effect of increase of transmission power.
1‧‧‧收發晶片封裝結構 1‧‧‧ Transceiver Chip Package Structure
10‧‧‧重佈線層 10‧‧‧ redistribution layer
101‧‧‧開口 101‧‧‧ opening
102‧‧‧導電線路 102‧‧‧ conductive line
103‧‧‧介電層 103‧‧‧ Dielectric layer
1031‧‧‧第一側 1031‧‧‧First side
1032‧‧‧第二側 1032‧‧‧Second side
104‧‧‧導電體 104‧‧‧Conductor
12‧‧‧晶片組 12‧‧‧ Chipset
121‧‧‧接收晶片 121‧‧‧ Receive chip
1211‧‧‧接收電路 1211‧‧‧Receiving circuit
1212‧‧‧訊號處理電路 1212‧‧‧Signal Processing Circuit
1212a‧‧‧混頻器 1212a‧‧‧Mixer
122‧‧‧發射晶片 122‧‧‧Launch chip
1221‧‧‧發射電路 1221‧‧‧Transmitting circuit
123‧‧‧射頻處理晶片 123‧‧‧RF Processing Chip
1231‧‧‧電壓控制震盪電路 1231‧‧‧Voltage Control Oscillation Circuit
14‧‧‧模封層 14‧‧‧moulding layer
2‧‧‧車用雷達偵測裝置 2‧‧‧vehicle radar detection device
21‧‧‧基板 21‧‧‧ substrate
211‧‧‧導線 211‧‧‧Wire
213‧‧‧接觸點 213‧‧‧contact point
22‧‧‧第一天線 22‧‧‧First antenna
23‧‧‧第二天線 23‧‧‧Second antenna
24‧‧‧控制晶片 24‧‧‧control chip
25‧‧‧焊接線 25‧‧‧welding wire
第1圖為本發明之第一實施例之收發晶片封裝結構之立體組合示意圖。 第1A圖為本發明之第一實施例之收發晶片封裝結構之組合剖面示意圖。 第2圖為本發明之第二實施例之車用雷達偵測裝置之立體組合示意圖。 第2A圖為本發明之第二實施例之車用雷達偵測裝置之組合剖面示意圖。 第3A圖為本發明之第二實施例之車用雷達偵測裝置之方塊示意圖。 第3B圖為本發明之第二實施例之車用雷達偵測裝置之另一方塊示意圖。 第4A圖為本發明之第三實施例之車用雷達偵測裝置之立體組合示意圖。 第4B圖為本發明之第三實施例之車用雷達偵測裝置之組合剖面示意圖。FIG. 1 is a three-dimensional schematic view of a package structure of a transceiver chip according to a first embodiment of the present invention. FIG. 1A is a schematic cross-sectional view of a package structure of a transceiver chip according to a first embodiment of the present invention. FIG. 2 is a three-dimensional schematic diagram of a vehicle radar detection device according to a second embodiment of the present invention. FIG. 2A is a schematic sectional view of a combination of a vehicle radar detection device according to a second embodiment of the present invention. FIG. 3A is a block diagram of a vehicle radar detection device according to a second embodiment of the present invention. FIG. 3B is another block diagram of a vehicle radar detection device according to a second embodiment of the present invention. FIG. 4A is a three-dimensional schematic diagram of a vehicle radar detection device according to a third embodiment of the present invention. FIG. 4B is a schematic sectional view of a combination of a vehicle radar detection device according to a third embodiment of the present invention.
Claims (20)
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| TW107111465A TWI667889B (en) | 2018-03-31 | 2018-03-31 | Receiver and transmitter chips packaging structure and automotive radar detector device using same |
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| TW201943214A true TW201943214A (en) | 2019-11-01 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI896075B (en) * | 2023-04-12 | 2025-09-01 | 德商Ams歐斯朗國際有限公司 | Optoelectronic semiconductor module, display device and method for manufacturing an optoelectronic semiconductor module |
| TWI898805B (en) * | 2024-08-28 | 2025-09-21 | 立積電子股份有限公司 | Radar apparatus and radar detecting method |
Families Citing this family (2)
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| TWI726404B (en) * | 2019-09-02 | 2021-05-01 | 為升電裝工業股份有限公司 | Vehicle radar device and system thereof |
| TWI779359B (en) * | 2019-09-02 | 2022-10-01 | 為升電裝工業股份有限公司 | Vehicle radar device and system thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7786944B2 (en) * | 2007-10-25 | 2010-08-31 | Motorola, Inc. | High frequency communication device on multilayered substrate |
| IT1404038B1 (en) * | 2010-12-29 | 2013-11-08 | St Microelectronics Srl | ELECTRONIC SEMICONDUCTOR DEVICE PROVIDED WITH AN INTEGRATED GALVANIC INSULATOR ELEMENT, AND RELATIVE ASSEMBLY PROCEDURE |
| US9753120B2 (en) * | 2014-10-22 | 2017-09-05 | Texas Instruments Incorporated | Method to “zoom into” specific objects of interest in a radar |
| US9953936B2 (en) * | 2015-10-30 | 2018-04-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
| US10615494B2 (en) * | 2016-09-08 | 2020-04-07 | Mediatek Inc. | Coupling reduction method for antennas in package |
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Cited By (2)
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| TWI896075B (en) * | 2023-04-12 | 2025-09-01 | 德商Ams歐斯朗國際有限公司 | Optoelectronic semiconductor module, display device and method for manufacturing an optoelectronic semiconductor module |
| TWI898805B (en) * | 2024-08-28 | 2025-09-21 | 立積電子股份有限公司 | Radar apparatus and radar detecting method |
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