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TW201922502A - Polishing pad and method for manufacturing polishing pad capable of realizing more precise polishing - Google Patents

Polishing pad and method for manufacturing polishing pad capable of realizing more precise polishing Download PDF

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Publication number
TW201922502A
TW201922502A TW107135681A TW107135681A TW201922502A TW 201922502 A TW201922502 A TW 201922502A TW 107135681 A TW107135681 A TW 107135681A TW 107135681 A TW107135681 A TW 107135681A TW 201922502 A TW201922502 A TW 201922502A
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Prior art keywords
polishing
microspheres
layer
polishing pad
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TW107135681A
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TWI790295B (en
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宮坂博仁
立野哲平
松岡立馬
三國匠
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日商富士紡控股股份有限公司
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Priority claimed from JP2017197600A external-priority patent/JP7176838B2/en
Priority claimed from JP2017197601A external-priority patent/JP7176839B2/en
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Abstract

The present invention provides a polishing pad for realizing more precise polishing. The polishing pad according to an embodiment of the present invention comprises a substrate and a polishing layer. The polishing layer is disposed on the substrate. The polishing layer has a polyurethane resin and microspheres. The microspheres are dispersed in the polyurethane resin, and each of the microspheres has an outer casing made of a thermoplastic resin and has an average particle diameter of 20 [mu]m or less. With such polishing pad, since the average particle diameter of the microspheres included in the polishing layer is 20 [mu]m or less, the object to be polished can be more precisely polished by the polishing layer, and thereby the reliability is higher.

Description

研磨墊及研磨墊之製造方法Method for manufacturing polishing pad and polishing pad

本發明係關於一種用於研磨對象物之研磨之研磨墊、及該研磨墊之製造方法。The present invention relates to a polishing pad for polishing an object, and a method of manufacturing the polishing pad.

於光學材料、半導體裝置、或硬碟用基板等之研磨時,使用研磨墊。研磨墊具有聚胺基甲酸酯等合成樹脂,且於合成樹脂中形成有空隙。於研磨時,空隙於研磨墊之表面開口,藉由將研磨漿料保持於該開口而進行研磨對象物之研磨。A polishing pad is used for polishing an optical material, a semiconductor device, or a substrate for a hard disk. The polishing pad has a synthetic resin such as a polyurethane, and a void is formed in the synthetic resin. At the time of polishing, the void is opened on the surface of the polishing pad, and the polishing object is polished by holding the polishing slurry in the opening.

作為空隙之形成方法,有使混合存在於樹脂中之未發泡之加熱膨脹性微球體於樹脂中膨脹之方法(例如,參照專利文獻1、2)。例如,於專利文獻1中,揭示有藉由使用粒徑為20 μm以上之加熱膨脹性微球體,使該加熱膨脹性微球體於樹脂中膨脹至150 μm左右形成空隙而獲得低密度之研磨墊。另一方面,於專利文獻2中,揭示有藉由將未膨脹之液體填充聚合物微球(加熱膨脹性微球)與預膨脹之液體填充聚合物微球混合,使未膨脹之液體填充聚合物微球於樹脂中膨脹至1000~10000%(20~150 μm之平均直徑),而獲得低密度、高空隙率之研磨墊。As a method of forming the voids, there is a method of expanding the unexpanded heat-expandable microspheres which are mixed in the resin in the resin (for example, refer to Patent Documents 1 and 2). For example, Patent Document 1 discloses that a heat-expandable microsphere having a particle diameter of 20 μm or more is used, and the heat-expandable microsphere is expanded in a resin to a gap of about 150 μm to form a void to obtain a low-density polishing pad. . On the other hand, in Patent Document 2, it is disclosed that an unexpanded liquid-filled polymer microsphere (heat-expandable microsphere) is mixed with pre-expanded liquid-filled polymer microspheres to cause an unexpanded liquid to be filled and polymerized. The microspheres are expanded to 1000 to 10000% (average diameter of 20 to 150 μm) in the resin to obtain a low-density, high-voiding polishing pad.

又,研磨墊除研磨層外,亦具備基材及設置於基材與研磨層之間之接著劑層。此種積層構造型之研磨墊若於研磨中,漿料自研磨層或研磨墊之側面滲透至接著劑層或緩衝層,則有於研磨層與緩衝層之間發生剝離之情形。Further, the polishing pad further includes a substrate and an adhesive layer provided between the substrate and the polishing layer in addition to the polishing layer. When the polishing pad of the laminated structure type is infiltrated during polishing, the slurry penetrates from the side of the polishing layer or the polishing pad to the adhesive layer or the buffer layer, and peeling occurs between the polishing layer and the buffer layer.

針對於此,有藉由於研磨層與接著劑層之間設置稱為止水層之層,而防止漿料向緩衝層之滲透的技術(例如,參照專利文獻3)。或有將研磨層之背面之表面粗糙度控制為1 μm以下,消除研磨層與接著劑層之界面,而抑制漿料向界面之滲透的技術(例如,參照專利文獻4)。
[先前技術文獻]
[專利文獻]
In view of this, there is a technique in which a layer called a water stop layer is provided between the polishing layer and the adhesive layer to prevent penetration of the slurry into the buffer layer (for example, refer to Patent Document 3). Alternatively, the surface roughness of the back surface of the polishing layer is controlled to be 1 μm or less, and the interface between the polishing layer and the adhesive layer is eliminated, and the penetration of the slurry into the interface is suppressed (for example, refer to Patent Document 4).
[Previous Technical Literature]
[Patent Literature]

專利文獻1:日本專利特開2010-274362號公報
專利文獻2:日本專利特開2016-128204號公報
專利文獻3:日本專利特開2009-095945號公報
專利文獻4:日本專利特開2007-038372號公報
Patent Document 1: Japanese Patent Laid-Open No. 2010-274362. Patent Document 2: Japanese Patent Laid-Open No. Hei. No. Hei. No. Hei. No. Hei. Bulletin

[發明所欲解決之問題][The problem that the invention wants to solve]

於上述專利文獻1、2中,均使加熱膨脹性微球體大幅膨脹,而獲得低密度之研磨墊。於研磨墊中,伴隨被研磨物之多樣化、高精度化,有高密度、小氣泡徑(20 μm以下)之要求。然而,已膨脹型之微球體僅有20 μm以上之市售品,加熱膨脹性微球體容易因混合之樹脂之反應熱等而膨脹至20 μm以上,難以製造20 μm以下之氣泡徑之研磨墊。In the above Patent Documents 1 and 2, the heat-expandable microspheres are largely expanded to obtain a low-density polishing pad. In the polishing pad, there is a demand for high density and small bubble diameter (20 μm or less) in accordance with the diversification and high precision of the object to be polished. However, the expanded microspheres are only commercially available products of 20 μm or more, and the heat-expandable microspheres are easily expanded to 20 μm or more by the reaction heat of the mixed resin, and it is difficult to manufacture a polishing pad having a bubble diameter of 20 μm or less. .

又,如上述專利文獻3、4,若除研磨層、基材及接著劑層外設置止水層,或者對研磨層之背面進行表面處理,則零件件數或製造步驟數增加且研磨墊之製造成本變高。Further, as described in the above Patent Documents 3 and 4, if a water stopping layer is provided in addition to the polishing layer, the substrate, and the adhesive layer, or the back surface of the polishing layer is subjected to surface treatment, the number of parts or the number of manufacturing steps is increased and the polishing pad is Manufacturing costs become higher.

鑒於以上情況,本發明之目的在於提供一種實現更精密之研磨且抑制製造成本之上升,並且防止由研磨中之漿料滲透導致之剝離強度之降低的可靠性更高之研磨墊及研磨墊之製造方法。
[解決問題之技術手段]
In view of the above circumstances, an object of the present invention is to provide a highly reliable polishing pad and polishing pad which achieves more precise polishing and suppresses an increase in manufacturing cost and prevents a decrease in peel strength caused by penetration of a slurry during polishing. Production method.
[Technical means to solve the problem]

為了達成上述目的,本發明之一形態之研磨墊具備基材及研磨層。上述研磨層設置於上述基材上。上述研磨層具有聚胺基甲酸酯樹脂及分散於上述聚胺基甲酸酯樹脂中且具有由熱塑性樹脂構成之外殼之微球體。上述微球體之平均粒徑為20 μm以下。
若為此種研磨墊,則因研磨層所包含之微球體之平均粒徑為20 μm以下,故能夠利用研磨層更精密地對研磨對象物進行研磨,提供可靠性更高之研磨墊。
In order to achieve the above object, a polishing pad according to an aspect of the present invention includes a substrate and a polishing layer. The polishing layer is provided on the substrate. The polishing layer has a polyurethane resin and a microsphere which is dispersed in the above-mentioned polyurethane resin and has an outer shell made of a thermoplastic resin. The above microspheres have an average particle diameter of 20 μm or less.
In the case of such a polishing pad, since the average particle diameter of the microspheres included in the polishing layer is 20 μm or less, the polishing object can be more precisely polished by the polishing layer, thereby providing a polishing pad having higher reliability.

於上述研磨墊中,上述研磨層之密度可為0.6 g/cm3 以上且0.9 g/cm3 以下。
若為此種研磨墊,則因研磨層所包含之微球體之密度為0.6 g/cm3 以上且0.9 g/cm3 以下,故能夠利用研磨層更精密地對研磨對象物進行研磨。
In the above polishing pad, the polishing layer may have a density of 0.6 g/cm 3 or more and 0.9 g/cm 3 or less.
In the case of such a polishing pad, since the density of the microspheres contained in the polishing layer is 0.6 g/cm 3 or more and 0.9 g/cm 3 or less, the polishing object can be more precisely polished by the polishing layer.

於上述研磨墊中,上述微球體為加熱膨脹性球體,且加熱前之平均粒徑可為5 μm以上且20 μm以下。
若為此種研磨墊,則即便使加熱膨脹性球體膨脹,亦能夠將研磨層所包含之微球體之平均粒徑抑制為20 μm以下,可利用研磨層更精密地對研磨對象物進行研磨。
In the above polishing pad, the microspheres are heated and expandable spheres, and the average particle diameter before heating may be 5 μm or more and 20 μm or less.
In the case of such a polishing pad, the average particle diameter of the microspheres contained in the polishing layer can be suppressed to 20 μm or less even if the heat-expandable sphere is expanded, and the object to be polished can be more precisely polished by the polishing layer.

於上述研磨墊中,分散於上述聚胺基甲酸酯樹脂中之上述微球體之平均粒徑可為10以上且20 μm以下。
若為此種研磨墊,則因研磨層所包含之微球體之平均粒徑為10 μm以上且20 μm以下,故能夠利用研磨層更精密地對研磨對象物進行研磨。
In the polishing pad, the microspheres dispersed in the polyurethane resin may have an average particle diameter of 10 or more and 20 μm or less.
In the case of such a polishing pad, since the average particle diameter of the microspheres included in the polishing layer is 10 μm or more and 20 μm or less, the polishing target can be more precisely polished by the polishing layer.

於上述研磨墊中,上述研磨層之每單位體積中存在之上述微球體可為50000個以上。上述研磨層中之上述微球體之佔有體積率可為20%以下。
若為此種研磨墊,則因研磨墊之每單位體積中存在之微球體為50000個以上,研磨墊中之微球體之佔有體積率為20%以下,故能夠利用研磨層更精密地對研磨對象物進行研磨。
In the polishing pad, the microspheres present per unit volume of the polishing layer may be 50,000 or more. The volume fraction of the microspheres in the polishing layer may be 20% or less.
In the case of such a polishing pad, since the number of microspheres per unit volume of the polishing pad is 50,000 or more, and the volume fraction of the microspheres in the polishing pad is 20% or less, the polishing layer can be more precisely ground by the polishing layer. The object is ground.

於上述研磨墊中,上述研磨層可具有上述基材側之第1主面、及於與上述基材為相反側構成研磨面之第2主面。上述第1主面由上述聚胺基甲酸酯樹脂之表面及沿著上述聚胺基甲酸酯樹脂表面被切斷之上述微球體之內壁面構成。上述雙面膠帶可包含設置於上述基材與上述研磨層之間,且與上述聚胺基甲酸酯樹脂之上述表面及上述微球體之上述內壁面相接的熱熔接著劑層。
若為此種研磨墊,則因研磨層之空隙為由具有外殼之微球體構成之獨立氣泡,故漿料難以滲透至研磨層內。進而,因雙面膠帶之熱熔接著劑層與研磨層之聚胺基甲酸酯樹脂之表面及微球體之內壁面相接,故基材與研磨層藉由投錨效應牢固地密接。
In the polishing pad, the polishing layer may have a first main surface on the substrate side and a second main surface that forms a polishing surface on the opposite side of the substrate. The first main surface is composed of a surface of the urethane resin and an inner wall surface of the microspheres which are cut along the surface of the urethane resin. The double-sided tape may include a hot-melt adhesive layer provided between the substrate and the polishing layer and in contact with the surface of the polyurethane resin and the inner wall surface of the microsphere.
In the case of such a polishing pad, since the void of the polishing layer is an independent bubble composed of a microsphere having a casing, it is difficult for the slurry to penetrate into the polishing layer. Further, since the hot-melt adhesive layer of the double-sided tape is in contact with the surface of the urethane resin of the polishing layer and the inner wall surface of the microsphere, the substrate and the polishing layer are firmly adhered by the anchoring effect.

於上述研磨墊中,上述熱熔接著劑層可為丙烯酸系樹脂。
若為此種研磨墊,則因熱熔接著劑層為丙烯酸系樹脂,故熱熔接著劑層牢固地密接於研磨層。
In the above polishing pad, the hot-melt adhesive layer may be an acrylic resin.
In the case of such a polishing pad, since the hot-melt adhesive layer is an acrylic resin, the hot-melt adhesive layer is firmly adhered to the polishing layer.

於上述研磨墊中,上述基材可為不織布材料,上述雙面膠帶之基材側之接著劑層可為感壓型接著劑層。
若為此種研磨墊,則基材牢固地密接於雙面膠帶。
In the above polishing pad, the substrate may be a non-woven material, and the adhesive layer on the substrate side of the double-sided tape may be a pressure-sensitive adhesive layer.
In the case of such a polishing pad, the substrate is firmly adhered to the double-sided tape.

為了達成上述目的,本發明之一形態之研磨墊之製造方法包括準備包含平均粒徑為5 μm以上且20 μm以下且具有由熱塑性樹脂構成之外殼之微球體及預聚物的液體。於上述液體中混合硬化劑而形成研磨材料。一面使上述研磨材料硬化,一面以上述微球體之上述平均粒徑成為1倍以上且未達4倍之方式調整上述平均粒徑而形成研磨層。
若為此種研磨墊之製造方法,則即便使加熱膨脹性球體膨脹,由於一面以微球體之平均粒徑成為1倍以上且未達4倍之方式抑制微球體之膨脹,一面形成研磨層,故亦能夠將研磨層所包含之微球體之平均粒徑抑制為20 μm以下,可利用研磨層更精密地對研磨對象物進行研磨。
In order to achieve the above object, a method for producing a polishing pad according to an aspect of the present invention includes preparing a liquid containing microspheres and a prepolymer having an outer diameter of 5 μm or more and 20 μm or less and having an outer shell made of a thermoplastic resin. The hardener is mixed in the above liquid to form an abrasive. The polishing layer is formed by adjusting the average particle diameter so that the average particle diameter of the microspheres is one time or more and less than four times.
In the method of producing such a polishing pad, even if the heat-expandable sphere is expanded, the polishing layer is formed while suppressing the expansion of the microspheres so that the average particle diameter of the microspheres is doubled or more and less than 4 times. Therefore, the average particle diameter of the microspheres contained in the polishing layer can be suppressed to 20 μm or less, and the object to be polished can be more precisely polished by the polishing layer.

於上述研磨墊之製造方法中,於準備上述液體之步驟中,上述微球體與預聚物可於80℃以下進行混合。於形成上述研磨層之步驟中,使上述研磨材料硬化時所使用之模具之溫度可為100℃以下,使上述研磨材料硬化所需之時間可未達150秒。
若為此種研磨墊之製造方法,則即便使加熱膨脹性球體膨脹,亦可將研磨層所包含之微球體之平均粒徑確實地抑制為20 μm以下,能夠利用研磨層更精密地對研磨對象物進行研磨。
[發明之效果]
In the method for producing a polishing pad, in the step of preparing the liquid, the microspheres and the prepolymer may be mixed at 80 ° C or lower. In the step of forming the polishing layer, the temperature of the mold used for curing the abrasive material may be 100 ° C or less, and the time required for curing the abrasive material may be less than 150 seconds.
In the method of producing such a polishing pad, even if the heat-expandable sphere is expanded, the average particle diameter of the microspheres contained in the polishing layer can be reliably suppressed to 20 μm or less, and the polishing layer can be more precisely ground by the polishing layer. The object is ground.
[Effects of the Invention]

如上所述,根據本發明,能夠提供一種可靠性更高之研磨墊及研磨墊之製造方法。As described above, according to the present invention, it is possible to provide a polishing pad and a method of manufacturing the polishing pad which are more reliable.

以下,一面參照圖式,一面對本發明之實施形態進行說明。於各圖式中,有時導入XYZ軸座標。Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each of the drawings, the XYZ axis coordinates are sometimes introduced.

(第1實施形態)(First embodiment)

[研磨墊之概要]
圖1(a)係表示第1實施形態之研磨墊100A之模式性立體圖。
[Summary of polishing pad]
Fig. 1(a) is a schematic perspective view showing a polishing pad 100A of the first embodiment.

研磨墊100A具備研磨層101、接著層102及緩衝層103。The polishing pad 100A includes a polishing layer 101, an adhesion layer 102, and a buffer layer 103.

研磨層101為與研磨對象物抵接,進行研磨之層。以下,將研磨層101之表面設為研磨面101a。於研磨面101a上,亦可形成用於使漿料液之流動良好之槽及孔(未圖示)。The polishing layer 101 is a layer that is in contact with the object to be polished and polished. Hereinafter, the surface of the polishing layer 101 is referred to as a polishing surface 101a. Grooves and holes (not shown) for making the flow of the slurry liquid good may be formed on the polishing surface 101a.

接著層102為將研磨層101與緩衝層103接著之層,例如為黏著帶。Next, layer 102 is a layer that follows polishing layer 101 and buffer layer 103, such as an adhesive tape.

緩衝層103為研磨墊100A之基材,且為使研磨層101向研磨對象物之抵接更均勻之層。緩衝層103可設為包含不織布或合成樹脂等具有可撓性之材料者。The buffer layer 103 is a base material of the polishing pad 100A, and is a layer in which the polishing layer 101 is more uniformly abutted against the object to be polished. The buffer layer 103 can be made of a flexible material such as a nonwoven fabric or a synthetic resin.

研磨墊100A藉由配設於緩衝層103之黏著帶等而貼附於研磨裝置。研磨墊100A之大小(直徑)可根據研磨裝置之尺寸等決定,例如,可設為直徑10 cm~1 m左右。再者,研磨墊100A之形狀不限於圓板狀,亦可為帶狀等。The polishing pad 100A is attached to the polishing apparatus by an adhesive tape or the like disposed on the buffer layer 103. The size (diameter) of the polishing pad 100A can be determined according to the size of the polishing apparatus, etc., and can be, for example, about 10 cm to 1 m in diameter. Further, the shape of the polishing pad 100A is not limited to a disk shape, and may be a belt shape or the like.

研磨墊100A於藉由研磨裝置按壓至研磨對象物之狀態下被旋轉驅動,對研磨對象物進行研磨。此時,於研磨墊100A與研磨對象物之間供給漿料液。漿料液經由槽或孔供給至研磨面101a並排出。The polishing pad 100A is rotationally driven while being pressed against the object to be polished by the polishing device, and the object to be polished is polished. At this time, a slurry liquid is supplied between the polishing pad 100A and the object to be polished. The slurry liquid is supplied to the polishing surface 101a via a groove or a hole and discharged.

[研磨層之構成]
圖1(b)係第1實施形態之研磨墊100A之模式性剖視圖。
[Composition of the polishing layer]
Fig. 1(b) is a schematic cross-sectional view of the polishing pad 100A of the first embodiment.

於研磨墊100A中,研磨層101包含聚合物110及微球體111。研磨層101經由接著層102設置於緩衝層103上。研磨層101之密度為0.6 g/cm3 以上且0.9 g/cm3 以下。再者,本實施形態中之微球體不限於其外周面為真球面之球體,亦包括具有外周面稍微變形之球體面之球體。研磨層101之每單位體積中存在之微球體111為50000個以上。研磨層101中之微球體111之佔有體積率為20%以下。In the polishing pad 100A, the polishing layer 101 includes a polymer 110 and microspheres 111. The polishing layer 101 is provided on the buffer layer 103 via the adhesion layer 102. The density of the polishing layer 101 is 0.6 g/cm 3 or more and 0.9 g/cm 3 or less. Further, the microspheres in the present embodiment are not limited to spheres whose outer peripheral surface is a true spherical surface, and also include a sphere having a spherical surface whose outer peripheral surface is slightly deformed. The number of microspheres 111 present per unit volume of the polishing layer 101 is 50,000 or more. The volume fraction of the microspheres 111 in the polishing layer 101 is 20% or less.

聚合物110為研磨材料之主要之構成材料。聚合物110可設為藉由預聚物與硬化劑之聚合反應生成之聚合物。作為此種聚合物,可列舉聚胺基甲酸酯樹脂等。聚胺基甲酸酯因獲取性及加工性良好,且具有較佳之研磨特性,故較佳作為聚合物110。The polymer 110 is the main constituent material of the abrasive material. The polymer 110 can be a polymer formed by polymerization of a prepolymer and a hardener. Examples of such a polymer include a polyurethane resin and the like. The polyurethane is preferably used as the polymer 110 because it has good availability and processability and has preferable polishing characteristics.

預聚物可設為具有異氰酸基末端之化合物(以下稱為異氰酸酯化合物),其係藉由使多異氰酸酯化合物與多元醇化合物於通常使用之條件下反應而獲得之化合物,於分子內包含聚胺基甲酸酯鍵及異氰酸基。又,於不損害本發明之效果之範圍內,含有聚胺基甲酸酯鍵之異氰酸酯化合物中亦可包含其他成分。The prepolymer may be a compound having an isocyanate group terminal (hereinafter referred to as an isocyanate compound) which is obtained by reacting a polyisocyanate compound with a polyol compound under normal use conditions, and is contained in the molecule. Polyurethane bond and isocyanate group. Further, the isocyanate compound containing a polyurethane bond may contain other components insofar as the effects of the present invention are not impaired.

多異氰酸酯化合物意指分子內具有2個以上之異氰酸基之化合物,例如,可使用甲伸苯基二異氰酸酯、二苯基甲烷二異氰酸酯等。The polyisocyanate compound means a compound having two or more isocyanate groups in the molecule, and for example, methylphenyl diisocyanate, diphenylmethane diisocyanate or the like can be used.

此外,作為多異氰酸酯化合物,可列舉:間苯二異氰酸酯、對苯二異氰酸酯、2,6-甲伸苯基二異氰酸酯(2,6-TDI)、2,4-甲伸苯基二異氰酸酯(2,4-TDI)、萘-1,4-二異氰酸酯、二苯基甲烷-4,4'-二異氰酸酯、3,3'-二甲氧基-4,4'-聯苯二異氰酸酯、3,3'-二甲基二苯基甲烷-4,4'-二異氰酸酯、苯二甲基-1,4-二異氰酸酯、4,4'-二苯基丙烷二異氰酸酯、三亞甲基二異氰酸酯、六亞甲基二異氰酸酯(HDI)、異佛爾酮二異氰酸酯、伸丙基-1,2-二異氰酸酯、伸丁基-1,2-二異氰酸酯、伸環己基-1,2-二異氰酸酯、伸環己基-1,4-二異氰酸酯、二環己基甲烷-4,4'-二異氰酸酯(氫化MDI)、對苯二異硫氰酸酯、苯二甲基-1,4-二異硫氰酸酯及次乙基二異硫氰酸酯。可使用該等之1種或2種以上。Further, examples of the polyisocyanate compound include: m-phenylene diisocyanate, p-phenylene diisocyanate, 2,6-methylphenylene diisocyanate (2,6-TDI), and 2,4-methylphenylene diisocyanate (2). , 4-TDI), naphthalene-1,4-diisocyanate, diphenylmethane-4,4'-diisocyanate, 3,3'-dimethoxy-4,4'-biphenyldiisocyanate, 3, 3'-Dimethyldiphenylmethane-4,4'-diisocyanate, benzodimethyl-1,4-diisocyanate, 4,4'-diphenylpropane diisocyanate, trimethylene diisocyanate, six Methylene diisocyanate (HDI), isophorone diisocyanate, propyl-1,2-diisocyanate, butyl-1,2-diisocyanate, cyclohexyl-1,2-diisocyanate, extens Cyclohexyl-1,4-diisocyanate, dicyclohexylmethane-4,4'-diisocyanate (hydrogenated MDI), p-phenylene isothiocyanate, benzodimethyl-1,4-diisothiocyanate Ester and hypoethyl diisothiocyanate. One type or two or more types may be used.

又,多元醇化合物意指分子內具有2個以上之醇性羥基(OH)之化合物,例如,可使用聚(氧四亞甲基)二醇(或聚四亞甲基醚二醇)(PTMG)、聚丙二醇(PPG)、二乙二醇(DEG)等。Further, the polyol compound means a compound having two or more alcoholic hydroxyl groups (OH) in the molecule, and for example, poly(oxytetramethylene) glycol (or polytetramethylene ether glycol) (PTMG) can be used. ), polypropylene glycol (PPG), diethylene glycol (DEG), and the like.

此外,作為多元醇化合物,可列舉:乙二醇、丁二醇等二醇化合物、三醇化合物等;PTMG等聚醚多元醇化合物;乙二醇與己二酸之反應物或丁二醇與己二酸之反應物等聚酯多元醇化合物;聚碳酸酯多元醇化合物、聚己內酯多元醇化合物等。可使用該等之1種或2種以上。Further, examples of the polyol compound include a diol compound such as ethylene glycol or butylene glycol, a triol compound, and the like; a polyether polyol compound such as PTMG; a reaction product of ethylene glycol with adipic acid or butanediol; A polyester polyol compound such as a reactant of adipic acid; a polycarbonate polyol compound, a polycaprolactone polyol compound, or the like. One type or two or more types may be used.

硬化劑可使用多胺系硬化劑。多胺系硬化劑為具有2個以上之胺基之物質,可使用:乙二胺、丙二胺、六亞甲基二胺等伸烷基二胺;異佛爾酮二胺、二環己甲烷-4,4'-二胺等具有脂肪族環之二胺;MOCA(3,3-二氯-4,4-二胺基二苯基甲烷)等具有芳香族環之二胺;2-羥基乙基乙二胺、2-羥基乙基丙二胺、二-2-羥基乙基乙二胺、二-2-羥基乙基丙二胺、2-羥基丙基乙二胺、二-2-羥基丙基乙二胺等具有羥基之二胺、特別是羥基烷基伸烷基二胺;等。又,亦可使用3官能之三胺化合物、4官能以上之多胺化合物。A polyamine-based hardener can be used as the hardener. The polyamine-based curing agent is a substance having two or more amine groups, and an alkylenediamine such as ethylenediamine, propylenediamine or hexamethylenediamine; isophorone diamine and dicyclohexyl can be used. a diamine having an aliphatic ring such as methane-4,4'-diamine; a diamine having an aromatic ring such as MOCA (3,3-dichloro-4,4-diaminodiphenylmethane); Hydroxyethylethylenediamine, 2-hydroxyethylpropylenediamine, di-2-hydroxyethylethylenediamine, di-2-hydroxyethylpropylenediamine, 2-hydroxypropylethylenediamine, di-2 a diamine having a hydroxyl group such as hydroxypropylethylenediamine, particularly a hydroxyalkylalkylene diamine; and the like. Further, a trifunctional triamine compound or a tetrafunctional or higher polyamine compound can also be used.

又,硬化劑亦可使用多元醇系硬化劑。多元醇系硬化劑為具有2個以上之羥基之物質,例如,可為乙二醇或聚醚多元醇。Further, a polyhydric alcohol-based curing agent can also be used as the curing agent. The polyol-based curing agent is a material having two or more hydroxyl groups, and may be, for example, ethylene glycol or a polyether polyol.

此外,作為多元醇系硬化劑,可列舉:丁二醇及己二醇等低分子量之多元醇化合物,以及聚乙二醇、聚丙二醇、聚四亞甲基醚二醇(PTMG)、雙酚A與環氧丙烷之反應物等聚醚多元醇化合物、乙二醇與己二酸之反應物、丁二醇與己二酸之反應物等聚酯多元醇化合物、聚碳酸酯多元醇化合物及聚己內酯多元醇化合物等高分子量之多元醇化合物。Further, examples of the polyol-based curing agent include low molecular weight polyol compounds such as butanediol and hexanediol, and polyethylene glycol, polypropylene glycol, polytetramethylene ether glycol (PTMG), and bisphenol. a polyether polyol compound such as a reaction product of A with propylene oxide, a reaction product of ethylene glycol with adipic acid, a polyester polyol compound such as a reaction product of butanediol and adipic acid, a polycarbonate polyol compound, and A high molecular weight polyol compound such as a polycaprolactone polyol compound.

硬化劑可使用多胺系硬化劑及多元醇系硬化劑中之1種或複數種。As the curing agent, one or more of a polyamine-based curing agent and a polyol-based curing agent can be used.

此處,以硬化劑中存在之胺基或羥基活性氫基相對於預聚物之末端存在之異氰酸基的當量比即R值成為0.70~1.20之方式混合各成分。R值較佳為0.70~1.20,更佳為0.80~1.00,進而較佳為0.85~0.95。藉由將R值設為1以下,而將過量之異氰酸基用於後述之交聯反應。Here, the components are mixed such that the equivalent ratio of the amine group or the hydroxyl group active hydrogen group present in the curing agent to the isocyanate group present at the terminal of the prepolymer is 0.70 to 1.20. The R value is preferably from 0.70 to 1.20, more preferably from 0.80 to 1.00, still more preferably from 0.85 to 0.95. An excess of the isocyanate group is used for the crosslinking reaction described later by setting the R value to 1 or less.

微球體111分散於聚合物110中。微球體111為具有外殼之球體狀之物體。於研磨面101a露出之半球狀之微球體111於形成研磨層101後,藉由切斷加工而露出。微球體111之平均粒徑為10 μm以上且20 μm以下。更佳為,微球體111之平均粒徑亦可設定為10 μm以上且未達20 μm。微球體111之粒徑或數量係根據例如雷射繞射式粒度分佈測定裝置、X射線CT(Computed Tomography,電腦斷層攝影)、電子顯微鏡圖像等而算出。The microspheres 111 are dispersed in the polymer 110. The microspheres 111 are spherical objects having a shell shape. The hemispherical microspheres 111 exposed on the polishing surface 101a are exposed by the cutting process after forming the polishing layer 101. The average particle diameter of the microspheres 111 is 10 μm or more and 20 μm or less. More preferably, the average particle diameter of the microspheres 111 can be set to be 10 μm or more and less than 20 μm. The particle diameter or the number of the microspheres 111 are calculated based on, for example, a laser diffraction type particle size distribution measuring apparatus, X-ray CT (Computed Tomography), an electron microscope image, or the like.

圖1(c)係第1實施形態之微球體111之模式性剖視圖。Fig. 1 (c) is a schematic cross-sectional view of the microsphere 111 of the first embodiment.

微球體111具有包含熱塑性樹脂之球殼狀之外殼111a及被外殼111a所包圍之內部空間111b。作為熱塑性樹脂,可使用例如偏二氯乙烯或丙烯腈。微球體111係藉由熱塑性樹脂之殼包裹低沸點烴者。微球體111為加熱膨脹性球體,使用加熱前之平均粒徑為5 μm以上且20 μm以下之加熱膨脹性球體。The microsphere 111 has a spherical shell-shaped outer casing 111a containing a thermoplastic resin and an inner space 111b surrounded by the outer casing 111a. As the thermoplastic resin, for example, vinylidene chloride or acrylonitrile can be used. The microspheres 111 are coated with a low boiling hydrocarbon by a shell of a thermoplastic resin. The microspheres 111 are heated and expandable spheres, and a heat-expandable sphere having an average particle diameter before heating of 5 μm or more and 20 μm or less is used.

微球體111藉由預聚物之聚合反應中之反應條件之調整而抑制膨脹。例如,迅速冷卻由聚合反應生成之反應熱,或者迅速促進預聚物之聚合反應而藉由存在於微球體111之周圍之聚合物強制地抑制膨脹。或者,微球體111亦可藉由伴隨聚胺基甲酸酯之生成反應之生成熱而略微地膨脹。但是,研磨層101所包含之微球體111之平均粒徑係調整為10 μm以上且20 μm以下。例如,分散於聚合物110中之微球體111之平均粒徑為15 μm。The microspheres 111 inhibit swelling by adjustment of reaction conditions in the polymerization of the prepolymer. For example, the heat of reaction generated by the polymerization reaction is rapidly cooled, or the polymerization of the prepolymer is rapidly promoted to forcibly suppress the expansion by the polymer existing around the microspheres 111. Alternatively, the microspheres 111 may be slightly expanded by the heat of generation accompanying the formation reaction of the polyurethane. However, the average particle diameter of the microspheres 111 included in the polishing layer 101 is adjusted to be 10 μm or more and 20 μm or less. For example, the microspheres 111 dispersed in the polymer 110 have an average particle diameter of 15 μm.

於微球體111中,外殼111a內填充有低沸點烴等。例如,低沸點烴為異丁烷、戊烷等。In the microsphere 111, the outer casing 111a is filled with a low boiling point hydrocarbon or the like. For example, the low boiling hydrocarbon is isobutane, pentane or the like.

微球體111亦可使用市售品。例如可使用Matsumoto Microsphere系列(松本油脂製藥股份有限公司製造)及EXPANCEL系列(AkzoNobel公司製造)作為微球體111。Commercially available products can also be used for the microspheres 111. For example, a Matsumoto Microsphere series (manufactured by Matsumoto Oil & Fat Pharmaceutical Co., Ltd.) and an EXPANCEL series (manufactured by Akzo Nobel Co., Ltd.) can be used as the microspheres 111.

於本實施形態中,可使用2種以上之直徑不同之微球體111。研磨材料中之微球體111之含有比率相對於研磨材料較佳為5體積%以上且60體積%以下,更佳為10體積%以上且45體積%以下,進而較佳為15體積%以上且30體積%以下。若研磨層101因研磨而磨耗,則微球體111露出於研磨面101a,影響研磨面101a之研磨特性。In the present embodiment, two or more kinds of microspheres 111 having different diameters can be used. The content ratio of the microspheres 111 in the polishing material is preferably 5% by volume or more and 60% by volume or less, more preferably 10% by volume or more and 45% by volume or less, and still more preferably 15% by volume or more and 30% or more based on the polishing material. Below volume%. When the polishing layer 101 is worn by polishing, the microspheres 111 are exposed on the polishing surface 101a, which affects the polishing properties of the polishing surface 101a.

[研磨墊之製造方法][Method of Manufacturing Polishing Pad]

圖2係製造本實施形態之研磨墊100A之製造裝置200之模式圖。Fig. 2 is a schematic view showing a manufacturing apparatus 200 for manufacturing the polishing pad 100A of the present embodiment.

製造裝置200具備第1儲槽201、第2儲槽202、攪拌槽203(混合容器)、模具204、容器212、泵401、泵402、切換閥410、切換閥420、流路501a、流路501b、流路501c、流路502a、流路502b、流路502c及流路503。The manufacturing apparatus 200 includes a first storage tank 201, a second storage tank 202, a stirring tank 203 (mixing container), a die 204, a container 212, a pump 401, a pump 402, a switching valve 410, a switching valve 420, a flow path 501a, and a flow path. 501b, flow path 501c, flow path 502a, flow path 502b, flow path 502c, and flow path 503.

第1儲槽201可收容包含微球體111及預聚物之內容物(液體)。微球體111預先收容於設置在第1儲槽201之上之容器212中。微球體111經由流路503自容器212投入至第1儲槽201。藉由將微球體111經由此種流路503自容器212投入至第1儲槽201,能夠抑制微球體111向第1儲槽201外之飛散。第2儲槽202能夠收容使預聚物硬化之硬化劑。攪拌槽203將包含微球體111及預聚物之液體與硬化劑混合而形成研磨材料301。The first storage tank 201 can accommodate the contents (liquid) including the microspheres 111 and the prepolymer. The microspheres 111 are previously housed in a container 212 provided above the first storage tank 201. The microspheres 111 are introduced into the first storage tank 201 from the container 212 via the flow path 503. By the microspheres 111 being introduced into the first storage tank 201 from the container 212 via the flow path 503, scattering of the microspheres 111 to the outside of the first storage tank 201 can be suppressed. The second storage tank 202 can accommodate a curing agent that hardens the prepolymer. The stirring tank 203 mixes the liquid containing the microspheres 111 and the prepolymer with the hardener to form the abrasive material 301.

藉由使此種樹脂製之微球體111分散於研磨層101,可使研磨層101中之空隙之大小均勻。進而,可藉由微球體111之投入量調整研磨墊100A之研磨特性。By dispersing such resin-made microspheres 111 in the polishing layer 101, the size of the voids in the polishing layer 101 can be made uniform. Further, the polishing property of the polishing pad 100A can be adjusted by the amount of input of the microspheres 111.

泵401能夠將包含微球體111及預聚物之液體自第1儲槽201供給至攪拌槽203。泵401設置於流路501a之中途。若藉由切換閥410將流路501a與流路501b連通且泵401作動,則經由流路501a、501b將包含微球體111及預聚物之液體自第1儲槽201供給至攪拌槽203。The pump 401 can supply the liquid containing the microspheres 111 and the prepolymer from the first storage tank 201 to the stirring tank 203. The pump 401 is disposed in the middle of the flow path 501a. When the flow path 501a and the flow path 501b are communicated by the switching valve 410 and the pump 401 is actuated, the liquid containing the microspheres 111 and the prepolymer is supplied from the first storage tank 201 to the stirring tank 203 via the flow paths 501a and 501b.

泵402能夠將硬化劑自第2儲槽202供給至攪拌槽203。泵402設置於流路502a之中途。若藉由切換閥420將流路502a與流路502b連通且泵402作動,則經由流路502a、502b將硬化劑自第2儲槽202供給至攪拌槽203。The pump 402 can supply the hardener from the second storage tank 202 to the agitation tank 203. The pump 402 is disposed in the middle of the flow path 502a. When the flow path 502a is communicated with the flow path 502b by the switching valve 420 and the pump 402 is actuated, the hardener is supplied from the second storage tank 202 to the stirring tank 203 via the flow paths 502a and 502b.

又,於製造裝置200中,若藉由切換閥410將流路501a與流路501c連通且泵401作動,則包含微球體111及預聚物之液體經由流路501a、501c而於第1儲槽201與泵401之間循環。又,若藉由切換閥420將流路502a與流路502c連通且泵402作動,則硬化劑經由流路502a、502c而於第2儲槽202與泵402之間循環。模具204自攪拌槽203接受研磨材料301,並由研磨材料301形成研磨層101。Further, in the manufacturing apparatus 200, when the flow path 501a and the flow path 501c are communicated by the switching valve 410 and the pump 401 is actuated, the liquid containing the microspheres 111 and the prepolymer is stored in the first storage via the flow paths 501a and 501c. The tank 201 circulates with the pump 401. When the flow path 502a and the flow path 502c are communicated by the switching valve 420 and the pump 402 is actuated, the hardener circulates between the second storage tank 202 and the pump 402 via the flow paths 502a and 502c. The mold 204 receives the abrasive material 301 from the agitation tank 203, and forms the polishing layer 101 from the abrasive material 301.

使用此種製造裝置200,例如,將預聚物及微球體111投入至第1儲槽201。投入至第1儲槽201前之微球體111之平均粒徑為5 μm以上且20 μm以下,更佳為5 μm以上且15 μm以下。預聚物可設為異氰酸酯化合物。將硬化劑投入至第2儲槽202。硬化劑為多元醇系硬化劑及聚胺系硬化劑之兩者或一者。為了使各原料之流動性穩定,以特定溫度加熱第1儲槽201及第2儲槽202。其中,為了極力抑制微球體111之膨脹,第1儲槽201之溫度較佳為設為50℃以上且80℃以下。若設為高於80℃之溫度,則存在微球體111膨脹之可能性。Using such a manufacturing apparatus 200, for example, the prepolymer and the microspheres 111 are put into the first storage tank 201. The average particle diameter of the microspheres 111 before being introduced into the first storage tank 201 is 5 μm or more and 20 μm or less, and more preferably 5 μm or more and 15 μm or less. The prepolymer can be set as an isocyanate compound. The hardener is introduced into the second storage tank 202. The curing agent is either or both of a polyol-based curing agent and a polyamine-based curing agent. In order to stabilize the fluidity of each raw material, the first storage tank 201 and the second storage tank 202 are heated at a specific temperature. In order to suppress the expansion of the microspheres 111 as much as possible, the temperature of the first storage tank 201 is preferably 50° C. or higher and 80° C. or lower. If it is set to a temperature higher than 80 ° C, there is a possibility that the microspheres 111 expand.

其次,自第1儲槽201將第1儲槽201內之內容物(以下稱為第1溶液)通過流路501a、泵401、切換閥410及流路501b送出至攪拌槽203。自第2儲槽202將第2儲槽202之內容物(以下稱為第2溶液)通過流路502a、泵402、切換閥420及流路502b送出至攪拌槽203。藉此,於攪拌槽203中形成混合第1溶液及第2溶液而成之流體狀之研磨材料301。Next, the contents of the first storage tank 201 (hereinafter referred to as the first solution) are sent from the first storage tank 201 to the stirring tank 203 through the flow path 501a, the pump 401, the switching valve 410, and the flow path 501b. The contents of the second storage tank 202 (hereinafter referred to as the second solution) are sent from the second storage tank 202 to the stirring tank 203 through the flow path 502a, the pump 402, the switching valve 420, and the flow path 502b. Thereby, a fluid-like abrasive 301 in which the first solution and the second solution are mixed is formed in the stirring tank 203.

其次,將研磨材料301流入至模具204,進行澆鑄。於模具204內之研磨材料301中,預聚物與硬化劑進行聚合反應。此處,隨著聚合反應之進行,混合物硬化,形成包含聚合物之塊狀物。此時,控制反應條件,一面使研磨材料301硬化,一面調整聚合反應後之微球體111之平均粒徑。又,由於存在微球體111亦會因模具204之溫度而膨脹之可能性,故模具204之溫度較佳為設為60℃以上且100℃以下。若設為60℃以下,則聚合反應之進行受阻,若設為高於100℃之高溫,則存在微球體111膨脹之可能性。Next, the abrasive 301 is poured into the mold 204 to be cast. In the abrasive material 301 in the mold 204, the prepolymer is polymerized with the hardener. Here, as the polymerization proceeds, the mixture hardens to form a mass comprising the polymer. At this time, the reaction conditions were controlled, and the average particle diameter of the microspheres 111 after the polymerization reaction was adjusted while the polishing material 301 was hardened. Further, since the microspheres 111 may expand due to the temperature of the mold 204, the temperature of the mold 204 is preferably 60 ° C or more and 100 ° C or less. When the temperature is 60 ° C or lower, the progress of the polymerization reaction is hindered, and if the temperature is higher than 100 ° C, the microspheres 111 may expand.

例如,於本實施形態中,藉由於適用期(至進行聚合反應而硬化前之時間)未達150秒內迅速地促進預聚物之聚合反應,從而較微球體111之膨脹速度更快地藉由促進聚合反應而使混合物之黏度增加,以聚合反應後之微球體111之平均粒徑成為將微球體111投入至第1儲槽201前之微球體111之平均粒徑之1倍以上且未達4倍之方式形成研磨層101。其中,微球體111之平均粒徑係調整為10 μm以上且20 μm以下。藉此,將研磨層101之密度調整為0.6 g/cm3 以上且0.9 g/cm3 以下。考慮到控制微球體111之膨脹,適用期較佳為60秒以上且150秒以下。For example, in the present embodiment, the polymerization reaction of the prepolymer is rapidly promoted by the application period (the time until the curing is performed until the polymerization is carried out) within 150 seconds, so that the expansion speed of the microspheres 111 is faster. The viscosity of the mixture is increased by the polymerization reaction, and the average particle diameter of the microspheres 111 after the polymerization reaction is equal to or more than 1 times the average particle diameter of the microspheres 111 before the microspheres 111 are introduced into the first storage tank 201. The polishing layer 101 is formed in a manner of up to 4 times. The average particle diameter of the microspheres 111 is adjusted to be 10 μm or more and 20 μm or less. Thereby, the density of the polishing layer 101 is adjusted to 0.6 g/cm 3 or more and 0.9 g/cm 3 or less. In view of controlling the expansion of the microspheres 111, the pot life is preferably 60 seconds or more and 150 seconds or less.

進而,藉由切片塊狀物而獲得研磨層101。於研磨層101積層接著層102及緩衝層103並裁切成所需之形狀,形成研磨墊100A。根據需要亦可於研磨層101形成槽等。Further, the polishing layer 101 is obtained by slicing a block. The polishing layer 101 is laminated with the layer 102 and the buffer layer 103 and cut into a desired shape to form a polishing pad 100A. A groove or the like may be formed in the polishing layer 101 as needed.

再者,微球體111為細小之微粒子,若將微球體111自第1儲槽201之上方投入至第1儲槽201,則存在微球體111於第1儲槽201內飛起,附著於第1儲槽201之內壁之可能性。其結果,存在微球體111無法效率良好地分散於預聚物中之可能性。因此,微球體111亦可自第1儲槽201之下側經由流路投入。藉此,微球體111剛投入至第1儲槽201後便直接地混入至積存於第1儲槽201底之預聚物中。Further, the microspheres 111 are fine particles. When the microspheres 111 are introduced into the first storage tank 201 from above the first storage tank 201, the microspheres 111 fly in the first storage tank 201 and adhere to the first 1 The possibility of the inner wall of the storage tank 201. As a result, there is a possibility that the microspheres 111 cannot be efficiently dispersed in the prepolymer. Therefore, the microspheres 111 can also be introduced through the flow path from the lower side of the first storage tank 201. Thereby, the microspheres 111 are directly introduced into the first storage tank 201, and are directly mixed into the prepolymer accumulated in the bottom of the first storage tank 201.

微球體111亦可投入至第2儲槽202。於該情形時亦與投入至第1儲槽201之方法同樣地,可自第2儲槽202之下側利用流路將微球體111投入至第2儲槽202。The microspheres 111 can also be introduced into the second storage tank 202. In this case as well, the microspheres 111 can be introduced into the second storage tank 202 by the flow path from the lower side of the second storage tank 202, similarly to the method of inputting to the first storage tank 201.

若為藉由此種方法所製造之研磨墊100A,則研磨層101所包含之微球體111之平均粒徑控制為10 μm以上且20 μm以下,研磨層101之密度調整為0.6 g/cm3 以上且0.9 g/cm3 以下,藉此,與分散有平均粒徑大於20 μm之微球體111之研磨層相比,能夠更精密地對研磨對象物進行研磨。進而,藉由研磨墊100A之研磨速度亦提昇。In the case of the polishing pad 100A manufactured by such a method, the average particle diameter of the microspheres 111 included in the polishing layer 101 is controlled to be 10 μm or more and 20 μm or less, and the density of the polishing layer 101 is adjusted to 0.6 g/cm 3 . The above is 0.9 g/cm 3 or less, whereby the object to be polished can be polished more precisely than the polishing layer in which the microspheres 111 having an average particle diameter of more than 20 μm are dispersed. Further, the polishing rate by the polishing pad 100A is also improved.

又,於本實施形態中,因第1溶液中所包含之微球體111之平均粒徑為5 μm以上且20 μm以下,故第1溶液通過流路501a、泵401、切換閥410及流路501b時之第1溶液之流動性提昇。藉此,能夠抑制流路501a、泵401、切換閥410及流路501b各者中之第1溶液之堵塞。其結果,異物不易殘存於研磨材料310中。Further, in the present embodiment, since the average particle diameter of the microspheres 111 included in the first solution is 5 μm or more and 20 μm or less, the first solution passes through the flow path 501a, the pump 401, the switching valve 410, and the flow path. The fluidity of the first solution at 501b is improved. Thereby, clogging of the first solution in each of the flow path 501a, the pump 401, the switching valve 410, and the flow path 501b can be suppressed. As a result, foreign matter does not easily remain in the abrasive material 310.

(第2實施形態)(Second embodiment)

[研磨墊之構成]
圖3係表示第2實施形態之研磨墊100B之模式性剖視圖。於圖3中,一併表示有研磨層101與雙面膠帶102之界面之放大圖及微球體111之放大圖。
[Composition of polishing pad]
Fig. 3 is a schematic cross-sectional view showing the polishing pad 100B of the second embodiment. In Fig. 3, an enlarged view of the interface between the polishing layer 101 and the double-sided tape 102 and an enlarged view of the microspheres 111 are shown.

研磨墊100B具備研磨層101、作為接著層之雙面膠帶102及緩衝層103。The polishing pad 100B includes a polishing layer 101, a double-sided tape 102 as an adhesive layer, and a buffer layer 103.

雙面膠帶102為將研磨層101與緩衝層103接著之層。The double-sided tape 102 is a layer in which the polishing layer 101 and the buffer layer 103 are followed.

於研磨墊100B中,研磨層101包含聚合物110及微球體111。研磨層101經由雙面膠帶102設置於緩衝層103上。於研磨層101中,將緩衝層103側之面作為第1主面101d,將於與緩衝層103為相反側構成研磨面之面作為第2主面101u。第1主面101d及第2主面101u之各者由聚合物110之表面110s及微球體111之內壁面111w構成。再者,本實施形態中之微球體不限於其外周面為真球面之球體,亦包括具有外周面稍微變形之球體面之球體。In the polishing pad 100B, the polishing layer 101 includes a polymer 110 and microspheres 111. The polishing layer 101 is provided on the buffer layer 103 via the double-sided tape 102. In the polishing layer 101, the surface on the buffer layer 103 side is referred to as a first main surface 101d, and the surface on which the polishing surface is formed on the side opposite to the buffer layer 103 is referred to as a second main surface 101u. Each of the first main surface 101d and the second main surface 101u is composed of a surface 110s of the polymer 110 and an inner wall surface 111w of the microsphere 111. Further, the microspheres in the present embodiment are not limited to spheres whose outer peripheral surface is a true spherical surface, and also include a sphere having a spherical surface whose outer peripheral surface is slightly deformed.

雙面膠帶102具有基材125、及設置於基材125之雙面之接著劑層120、121。接著劑層120設置於基材125與研磨層101之間。接著劑層121設置於基材125與緩衝層103之間。接著劑層120為熱熔接著劑層,接著劑層121可為熱熔接著劑層,亦可為其他種類(例如感壓型)之接著劑層。於使用不織布材料作為緩衝層103之情形時,若接著劑層121為熱熔接著劑層,則於漿料液滲透至緩衝層之情形時,接著力極端降低,故較佳為使用感壓型接著劑等。The double-sided tape 102 has a substrate 125 and adhesive layers 120 and 121 provided on both sides of the substrate 125. The adhesive layer 120 is disposed between the substrate 125 and the polishing layer 101. The adhesive layer 121 is disposed between the substrate 125 and the buffer layer 103. The adhesive layer 120 is a hot-melt adhesive layer, and the adhesive layer 121 may be a hot-melt adhesive layer or an adhesive layer of another kind (for example, a pressure sensitive type). In the case where a non-woven fabric material is used as the buffer layer 103, if the adhesive layer 121 is a hot-melt adhesive layer, when the slurry liquid penetrates into the buffer layer, the force is extremely lowered, so that it is preferable to use the pressure-sensitive type. Followers and so on.

熱熔接著劑層包含熱塑性樹脂,例如,包含丙烯酸系樹脂、乙烯-乙酸乙烯酯系樹脂、烯烴系樹脂、合成橡膠系樹脂、聚醯胺系樹脂、及聚酯系樹脂等。接著劑層120之成分不限於一成分,亦可為包含二液以上之混合型。再者,關於緩衝層103側之接著劑層121,不限定於熱熔接著劑層,亦可為橡膠系接著劑、矽酮系接著劑、胺基甲酸乙酯系接著劑、環氧系接著劑及苯乙烯-二烯嵌段共聚物系接著劑等之黏著劑層。The hot-melt adhesive layer contains a thermoplastic resin, and includes, for example, an acrylic resin, an ethylene-vinyl acetate resin, an olefin resin, a synthetic rubber resin, a polyamide resin, and a polyester resin. The component of the subsequent agent layer 120 is not limited to one component, and may be a mixed type containing two or more liquids. Further, the adhesive layer 121 on the side of the buffer layer 103 is not limited to the hot-melt adhesive layer, and may be a rubber-based adhesive, an anthrone-based adhesive, an urethane-based adhesive, or an epoxy-based adhesive. And an adhesive layer such as a styrene-diene block copolymer-based adhesive.

基材125為雙面膠帶102之基體。基材125例如包含聚醯亞胺系樹脂、聚酯系樹脂、聚胺基甲酸酯系樹脂、聚乙烯系樹脂、聚丙烯系樹脂、纖維素系樹脂、聚氯乙烯系樹脂、聚偏二氯乙烯系樹脂、聚乙烯醇系樹脂、乙烯-乙酸乙烯酯共聚物系樹脂、聚苯乙烯系樹脂、聚碳酸酯系樹脂、丙烯酸系樹脂、該等之2種以上之積層體樹脂等。The substrate 125 is a substrate of the double-sided tape 102. The base material 125 includes, for example, a polyimide resin, a polyester resin, a polyurethane resin, a polyethylene resin, a polypropylene resin, a cellulose resin, a polyvinyl chloride resin, and a polyvinylidene second. A vinyl chloride resin, a polyvinyl alcohol resin, an ethylene-vinyl acetate copolymer resin, a polystyrene resin, a polycarbonate resin, an acrylic resin, or a laminate resin of two or more kinds thereof.

微球體111分散於聚合物110中。微球體111為具有外殼之球體狀之物體。微球體111於研磨層101之第1主面101d及第2主面101u(研磨面101a)成為半球體狀,其內壁露出。該半球狀之微球體111係於塊狀之研磨層101形成之後,與聚合物110一起沿著聚合物110之表面被切斷而成者。The microspheres 111 are dispersed in the polymer 110. The microspheres 111 are spherical objects having a shell shape. The microsphere 111 has a hemispherical shape on the first main surface 101d and the second main surface 101u (polishing surface 101a) of the polishing layer 101, and the inner wall thereof is exposed. The hemispherical microspheres 111 are formed by cutting the surface of the polymer 110 together with the polymer 110 after the block-shaped polishing layer 101 is formed.

於研磨墊100B中,接著劑層120密接於基材125,並且密接於研磨層101之第1主面101d。例如,接著劑層120與聚合物110之表面110s及微球體111之內壁面111w相接。即,接著劑層120於第1主面101d中,不僅與聚合物110之表面110s相接,還進入至微球體111之內部。In the polishing pad 100B, the adhesive layer 120 is in close contact with the substrate 125 and is in close contact with the first main surface 101d of the polishing layer 101. For example, the adhesive layer 120 is in contact with the surface 110s of the polymer 110 and the inner wall surface 111w of the microsphere 111. That is, the adhesive layer 120 is in contact with the surface 110s of the polymer 110 in the first main surface 101d, and also enters the inside of the microsphere 111.

[研磨墊之製造方法][Method of Manufacturing Polishing Pad]

藉由切片利用圖2所示之製造裝置200而形成之塊狀之研磨層101,獲得片狀之研磨層101。此時,露出於研磨層101之主面101u、101d之微球體111被切斷,於研磨層101之主面101u、101d露出微球體111之內壁面111w。藉由自切斷之微球體111蒸發或向空氣中釋出低沸點烴而露出內壁面111w。The sheet-shaped polishing layer 101 is obtained by slicing the block-shaped polishing layer 101 formed by the manufacturing apparatus 200 shown in FIG. At this time, the microspheres 111 exposed on the main faces 101u and 101d of the polishing layer 101 are cut, and the inner wall faces 111w of the microspheres 111 are exposed on the main faces 101u and 101d of the polishing layer 101. The inner wall surface 111w is exposed by evaporation from the cut microspheres 111 or release of low boiling hydrocarbons into the air.

圖4(a)及圖4(b)係表示將研磨層101與緩衝層103貼合之步驟之模式圖。4(a) and 4(b) are schematic views showing a step of bonding the polishing layer 101 and the buffer layer 103.

如圖4(a)所示,於準備切片為片狀之研磨層101、雙面膠帶102及緩衝層103後,使研磨層101與緩衝層103對向,將雙面膠帶102介置於研磨層101與緩衝層103之間。再者,於圖4(a)、(b)之例中,將接著劑層120設為熱熔接著劑層,將接著劑層121設為感壓型接著劑層。As shown in FIG. 4(a), after the polishing layer 101, the double-sided tape 102, and the buffer layer 103 which are sliced into a sheet shape are prepared, the polishing layer 101 and the buffer layer 103 are opposed to each other, and the double-sided tape 102 is placed in the polishing. Between the layer 101 and the buffer layer 103. Further, in the examples of FIGS. 4(a) and 4(b), the adhesive layer 120 is a hot-melt adhesive layer, and the adhesive layer 121 is a pressure-sensitive adhesive layer.

首先,藉由使雙面膠帶102與緩衝層103加壓接著,繼而使雙面膠帶102之接著劑層120與研磨層101加熱而接著,從而形成積層體(熱熔式接著)。First, by pressing the double-sided tape 102 and the buffer layer 103, the adhesive layer 120 of the double-sided tape 102 and the polishing layer 101 are subsequently heated, and then a laminate (hot melt type) is formed.

此時,藉由加熱,接著劑層120之流動性、黏著性增加,接著劑層120密接於研磨層101,接著劑層121密接於緩衝層103。此時,於第1主面101d,接著劑層120接於聚合物110之表面110s,並且進入至微球體111內,亦接於微球體111之內壁面111w(參照圖3)。At this time, by heating, the fluidity and adhesiveness of the adhesive layer 120 increase, the adhesive layer 120 is in close contact with the polishing layer 101, and the adhesive layer 121 is in close contact with the buffer layer 103. At this time, on the first main surface 101d, the adhesive layer 120 is bonded to the surface 110s of the polymer 110, and enters into the microsphere 111, and is also connected to the inner wall surface 111w of the microsphere 111 (see FIG. 3).

加熱溫度例如設定為80℃以上且110℃以下。又,於加熱時,根據需要亦可對自研磨層101朝向雙面膠帶102之方向及自緩衝層103朝向雙面膠帶102之方向施加壓力。此時,微球體111因其外周被聚合物110包圍,故不易發生熱膨脹或變形。The heating temperature is set, for example, to 80 ° C or more and 110 ° C or less. Further, at the time of heating, pressure may be applied from the direction in which the polishing layer 101 faces the double-sided tape 102 and from the buffer layer 103 toward the double-sided tape 102 as needed. At this time, since the microspheres 111 are surrounded by the polymer 110 due to the outer periphery thereof, thermal expansion or deformation is less likely to occur.

研磨層101與緩衝層103藉由雙面膠帶102接著後,將積層體裁切為所需之形狀(例如圓板狀),形成如圖3所示之研磨墊100B。After the polishing layer 101 and the buffer layer 103 are followed by the double-sided tape 102, the laminated body is cut into a desired shape (for example, a disk shape) to form a polishing pad 100B as shown in FIG.

若為此種研磨墊100B,則因研磨層101之空隙為由具有外殼111a之微球體111構成之獨立氣泡,故漿料無法通過微球體111侵入至研磨層101之內部。藉此,漿料無法自研磨層101之第2主面101u滲透至第1主面101d。即,漿料無法自研磨層101之第2主面101u到達雙面膠帶102。In the case of such a polishing pad 100B, since the void of the polishing layer 101 is an independent bubble composed of the microspheres 111 having the outer casing 111a, the slurry cannot enter the inside of the polishing layer 101 through the microspheres 111. Thereby, the slurry cannot penetrate from the second main surface 101u of the polishing layer 101 to the first main surface 101d. That is, the slurry cannot reach the double-sided tape 102 from the second main surface 101u of the polishing layer 101.

進而,若為研磨墊100B,則可設置多個接有雙面膠帶102之熱熔接著劑之微球體111之內壁面,雙面膠帶102更牢固地密接於研磨層101。例如,因雙面膠帶102之接著劑層120與研磨層101之聚合物110之表面110s及微球體111之內壁面111w相接,故於研磨層101與雙面膠帶102之間作用有投錨效應,研磨層101與雙面膠帶102牢固地密接。藉此,研磨層101不易自雙面膠帶102剝離。Further, in the case of the polishing pad 100B, the inner wall surface of the plurality of microspheres 111 to which the hot-melt adhesive of the double-sided tape 102 is attached can be provided, and the double-sided tape 102 can be more closely adhered to the polishing layer 101. For example, since the adhesive layer 120 of the double-sided tape 102 is in contact with the surface 110s of the polymer 110 of the polishing layer 101 and the inner wall surface 111w of the microsphere 111, an anchoring effect acts between the polishing layer 101 and the double-sided tape 102. The polishing layer 101 is firmly adhered to the double-sided tape 102. Thereby, the polishing layer 101 is less likely to be peeled off from the double-sided tape 102.

特別是於本實施形態之研磨層101,接著劑層120於第1主面101d中進入至平均粒徑為20 μm以下(例如,15 μm)之微細之微球體111內。藉此,進一步促進投錨效應,研磨層與接著層之剝離強度變大。In particular, in the polishing layer 101 of the present embodiment, the adhesive layer 120 enters into the fine microspheres 111 having an average particle diameter of 20 μm or less (for example, 15 μm) in the first main surface 101d. Thereby, the anchoring effect is further promoted, and the peeling strength of the polishing layer and the adhesive layer becomes large.

進而,因研磨層之101之第1主面101d由聚合物110之表面110s及微球體111之內壁面111w構成,故而第1主面101d之表面積與僅由聚合物110之表面110s構成之情形相比變大。藉此,接著劑層120對第1主面101d之接觸面積增大,接著劑層120對研磨層101之密接力提昇。Further, since the first main surface 101d of the polishing layer 101 is composed of the surface 110s of the polymer 110 and the inner wall surface 111w of the microsphere 111, the surface area of the first main surface 101d and the surface 110s of only the polymer 110 are formed. It is bigger than it is. Thereby, the contact area of the adhesive layer 120 with respect to the first main surface 101d is increased, and the adhesion of the adhesive layer 120 to the polishing layer 101 is improved.

又,於本實施形態中,無需在研磨層101與雙面膠帶102之間設置止水層。藉此,抑制研磨墊之製造成本上升。又,即便於研磨層101與雙面膠帶102之間設置止水層,於研磨層之空隙未由微球體111構成之情形時,存在漿料自研磨層滲透至研磨層與雙面膠帶之間之可能性,存在研磨層與止水層之密接力降低之可能性。Further, in the present embodiment, it is not necessary to provide a water stop layer between the polishing layer 101 and the double-sided tape 102. Thereby, the manufacturing cost of the polishing pad is suppressed from increasing. Further, even if a water stop layer is provided between the polishing layer 101 and the double-sided tape 102, when the gap of the polishing layer is not constituted by the microspheres 111, there is a penetration of the slurry from the polishing layer between the polishing layer and the double-sided tape. There is a possibility that the adhesion between the polishing layer and the water stop layer may decrease.

又,於本實施形態中,研磨層101之第1主面101d之表面粗糙度(Ra)無需製備為1 μm以下。藉此,能夠抑制研磨墊之製造成本上升。於本實施形態中,為了使接著劑層120藉由投錨效應與研磨層101牢固地密接,研磨層101與雙面膠帶102之界面幾乎不存在間隙,故能夠有效地防止漿料向該界面之滲入。Further, in the present embodiment, the surface roughness (Ra) of the first main surface 101d of the polishing layer 101 need not be prepared to be 1 μm or less. Thereby, it is possible to suppress an increase in the manufacturing cost of the polishing pad. In the present embodiment, in order to make the adhesive layer 120 firmly adhere to the polishing layer 101 by the anchoring effect, there is almost no gap between the polishing layer 101 and the double-sided tape 102, so that the slurry can be effectively prevented from being applied to the interface. Infiltration.

又,於研磨墊100B中,將研磨層101所包含之微球體111之平均粒徑控制為20 μm以下(例如,15 μm),研磨層101之密度調整為0.6 g/cm3 以上且0.9 g/cm3 以下。藉此,與分散有平均粒徑為20 μm以上之微球體111之研磨層相比,能夠更精密地對研磨對象物進行研磨。進而,藉由研磨墊100B之研磨速率亦提昇。Further, in the polishing pad 100B, the average particle diameter of the microspheres 111 included in the polishing layer 101 is controlled to 20 μm or less (for example, 15 μm), and the density of the polishing layer 101 is adjusted to 0.6 g/cm 3 or more and 0.9 g. /cm 3 or less. Thereby, the object to be polished can be polished more precisely than the polishing layer in which the microspheres 111 having an average particle diameter of 20 μm or more are dispersed. Further, the polishing rate by the polishing pad 100B is also increased.

又,於本實施形態中,因第1溶液所包含之微球體111之平均粒徑為5 μm以上且未達20 μm,故第1溶液通過流路501a、泵401、切換閥410及流路501b時之第1溶液之流動性提昇。藉此,能夠抑制流路501a、泵401、切換閥410及流路501b之各者中之第1溶液之堵塞。其結果,異物不易殘存於研磨材料301中。
[實施例]
Further, in the present embodiment, since the average particle diameter of the microspheres 111 included in the first solution is 5 μm or more and less than 20 μm, the first solution passes through the flow path 501a, the pump 401, the switching valve 410, and the flow path. The fluidity of the first solution at 501b is improved. Thereby, clogging of the first solution in each of the flow path 501a, the pump 401, the switching valve 410, and the flow path 501b can be suppressed. As a result, foreign matter does not easily remain in the abrasive 301.
[Examples]

[實施例1][Example 1]

以下,於同一聚胺基甲酸酯樹脂製之研磨層101形成平均粒徑不同之微球體111,進行比較研究。於表1中表示實施例、比較例之微球體111之平均粒徑。平均粒徑係藉由後述之X射線CT裝置算出。Hereinafter, the microspheres 111 having different average particle diameters are formed on the polishing layer 101 made of the same polyurethane resin, and comparative studies are carried out. The average particle diameter of the microspheres 111 of the examples and comparative examples is shown in Table 1. The average particle diameter is calculated by an X-ray CT apparatus to be described later.

[表1]
[Table 1]

於實施例、比較例中,除微球體111之平均粒徑以外,於相同條件下形成研磨層101。由X射線CT所測得之每單位體積之微球體111之平均粒徑、個數、佔有體積率等及研磨速率之測定方法如下。In the examples and comparative examples, the polishing layer 101 was formed under the same conditions except for the average particle diameter of the microspheres 111. The method of measuring the average particle diameter, the number, the occupied volume ratio, and the like of the microspheres 111 per unit volume measured by X-ray CT and the polishing rate are as follows.

<X射線CT裝置>
測定裝置:三維測量X射線CT裝置TDM1000H-II(2K)(Yamato Scientific股份有限公司製造)
・解析軟體:VGStudio MAX3.0(VG ACADEMY公司製造)
・放大軸:10 mm
<X-ray CT device>
Measuring device: three-dimensional measuring X-ray CT device TDM1000H-II (2K) (manufactured by Yamato Scientific Co., Ltd.)
・Analysis software: VGStudio MAX3.0 (made by VG ACADEMY)
・Magnification axis: 10 mm

利用X射線CT裝置拍攝將研磨墊切出3 mm見方並藉由黏著帶固定者,獲得X射線CT圖像(測定體積1 mm3 左右)。將拍攝之X射線CT圖像讀取至上述解析軟體,對相當於0.5 mm3 左右之體積之部分進行多孔質構造解析,獲得試樣內之微球體111之空腔部分之總體積及個數。根據所得之微球體111之總體積及個數算出每1個微球體111之直徑作為平均粒徑,並且算出研磨墊中之每單位體積之微球體之個數及佔有體積率。An X-ray CT image (measurement volume of about 1 mm 3 ) was obtained by taking an X-ray CT apparatus and cutting the polishing pad by 3 mm square and fixing it by an adhesive tape. The captured X-ray CT image is read into the analysis software, and the porous structure is analyzed for a portion corresponding to a volume of about 0.5 mm 3 to obtain the total volume and number of the cavity portions of the microspheres 111 in the sample. . The diameter of each microsphere 111 was calculated as the average particle diameter based on the total volume and number of the obtained microspheres 111, and the number of microspheres per unit volume in the polishing pad and the occupied volume ratio were calculated.

再者,雖亦有藉由使用掃描式電子顯微鏡等之表面觀察測定微球體111之平均粒徑之方法等,但因於表面觀察中僅能夠測定微球體111之切斷面之尺寸,會測定得小於實際之微球體111之直徑,故難以測定正確之數值。又,於該等表面觀察中,於切斷面被壓扁、或表面經打磨之狀態下難以測定。因此,於本實施例、比較例中,藉由將使用X射線CT裝置所得之空腔部分之直徑設為微球體111之平均粒徑,而求得與實際之微球體111之直徑更接近之值。In addition, there is a method of measuring the average particle diameter of the microspheres 111 by surface observation using a scanning electron microscope or the like, but it is possible to measure only the size of the cut surface of the microspheres 111 in the surface observation. It is smaller than the diameter of the actual microsphere 111, so it is difficult to determine the correct value. Moreover, in such surface observation, it is difficult to measure in the state in which the cut surface is crushed or the surface is ground. Therefore, in the present embodiment and the comparative example, the diameter of the cavity portion obtained by using the X-ray CT apparatus is set to be the average particle diameter of the microspheres 111, and the diameter of the microspheres 111 is closer to the actual diameter of the microspheres 111. value.

<研磨試驗>
使用研磨機:荏原製作所公司製造,F-REX300
研磨盤:旭金剛石工業公司製造,C100
旋轉數:(壓盤)70 rpm,(頂環)71 rpm
研磨壓力:3.5 psi
研磨劑溫度:20℃
研磨劑噴出量:200 ml/min
<grinding test>
Using a grinder: manufactured by Ebara Seisakusho Co., Ltd., F-REX300
Grinding disc: manufactured by Asahi Diamond Industry Co., Ltd., C100
Number of rotations: (platen) 70 rpm, (top ring) 71 rpm
Grinding pressure: 3.5 psi
Abrasive temperature: 20 ° C
Abrasive spray volume: 200 ml/min

<被研磨物及研磨劑>
(TEOS(tetraethoxysilane,四乙氧基矽烷)膜研磨)
使用工件(被研磨物):於12英吋矽晶圓上藉由電漿CVD(PE-CVD(Plasma Enhanced-Chemical Vapor Deposition,電漿輔助化學氣相沈積))以絕緣膜之厚度成為1 μm之方式形成四乙氧基矽烷所得之基板
研磨劑:Cabot公司製造,產品編號:SS25(使用原液:純水=1:1之混合液)
(Cu膜研磨)
使用工件(被研磨物):鍍Cu基板
研磨劑:Cabot公司製造之Cu用漿料
<Abrased material and abrasive>
(TEOS (tetraethoxysilane) film grinding)
Use workpiece (abrasive): at 12 inches Substrate polishing by plasmon CVD (Plasma Enhanced-Chemical Vapor Deposition) to form tetraethoxy decane by a thickness of 1 μm. Agent: Cabot company, product number: SS25 (using stock solution: pure water = 1:1 mixture)
(Cu film grinding)
Workpiece (abrasive): Cu-plated substrate abrasive: Cu slurry manufactured by Cabot

將結果表示於表2中。研磨速度係藉由厚度(nm)表示每1分鐘之研磨量。對於研磨加工後之晶圓上之TEOS膜或Cu膜,於121個部位測定厚度,求得被研磨之厚度之平均值。藉由將被研磨之厚度之平均值除以研磨時間而求得研磨速度(nm/分鐘)。對TEOS膜基板、Cu膜基板均進行50片基板之研磨加工,考慮到上升,求得第10片以後至第50片之平均值。再者,厚度測定係由光學式膜厚膜質測定器(KLA-Tencor公司製造,型號「ASET-F5x」)之DBS(Dual Beam Spectrometry,雙光束分光光度法)模式測定。The results are shown in Table 2. The polishing rate is expressed by the thickness (nm) of the amount of grinding per minute. The thickness of the TEOS film or the Cu film on the wafer after the polishing was measured at 121 locations, and the average value of the thickness to be polished was determined. The polishing rate (nm/min) was determined by dividing the average value of the thickness to be polished by the polishing time. On the TEOS film substrate and the Cu film substrate, 50 substrates were polished, and the average value from the 10th sheet to the 50th sheet was obtained in consideration of the rise. Further, the thickness measurement was carried out by a DBS (Dual Beam Spectrometry) mode of an optical film thickness film measuring instrument (manufactured by KLA-Tencor Co., model "ASET-F5x").

[表2]
[Table 2]

如表2所示,於實施例中,研磨層101之每單位體積中存在之微球體111為50000個以上,例如為71250個。相對於此,於比較例中為32750個。又,於實施例中,研磨層101中之微球體111之佔有體積率為20%以下,例如為18.1%。相對於此,比較例為22.9%。可知,於實施例中,絕緣膜(TEOS膜)之研磨速度及金屬膜(Cu膜)之研磨速度與比較例相比增加。
[實施例2]
As shown in Table 2, in the examples, the number of microspheres 111 present per unit volume of the polishing layer 101 is 50,000 or more, for example, 71,250. On the other hand, in the comparative example, it was 32,750. Further, in the examples, the volume fraction of the microspheres 111 in the polishing layer 101 is 20% or less, for example, 18.1%. On the other hand, the comparative example was 22.9%. In the examples, the polishing rate of the insulating film (TEOS film) and the polishing rate of the metal film (Cu film) were increased as compared with the comparative example.
[Embodiment 2]

以下表示變更接著材層120、121之材料之情形時之研磨層101與緩衝層103之間的剝離強度之差異。此處,研磨層101為聚胺基甲酸酯樹脂。研磨層101中所包含之微球體111之平均粒徑為15 μm。緩衝層103之材料為不織布材料。The difference in peel strength between the polishing layer 101 and the buffer layer 103 when the materials of the subsequent material layers 120 and 121 are changed will be described below. Here, the polishing layer 101 is a polyurethane resin. The average particle diameter of the microspheres 111 contained in the polishing layer 101 was 15 μm. The material of the buffer layer 103 is a non-woven material.

於表3中表示有實施例A、B、比較例1、2中之接著材層120、120之材料及接著方法。除接著劑層之材料、接著方法以外,於實施例A、B、比較例1、2中,於相同條件下製作研磨墊100B。Table 3 shows the materials of the binder layers 120 and 120 of Examples A and B and Comparative Examples 1 and 2, and the subsequent methods. In the examples A and B and the comparative examples 1 and 2, the polishing pad 100B was produced under the same conditions except for the material of the adhesive layer and the subsequent method.

[表3]
[table 3]

於實施例A、B、比較例1、2之各者中,製作至少3片以上之研磨墊100B,於3片以上之中,1片乾燥,1片浸漬於水中24小時,1片浸漬於10%過氧化氫水溶液(pH值=2.5)中24小時。此後,進行各研磨墊100B中之研磨層101與緩衝層103之間之剝離強度之測定。In each of Examples A and B and Comparative Examples 1 and 2, at least three or more polishing pads 100B were produced, and one of the three or more sheets was dried, and one of the sheets was immersed in water for 24 hours, and one of the sheets was immersed in 24 hours in 10% aqueous hydrogen peroxide (pH = 2.5). Thereafter, the peel strength between the polishing layer 101 and the buffer layer 103 in each of the polishing pads 100B was measured.

圖5係表示研磨層101與緩衝層103之間之剝離強度之圖表。FIG. 5 is a graph showing the peel strength between the polishing layer 101 and the buffer layer 103.

作為接著劑,可使用熱熔接著劑(丙烯酸系樹脂)、感壓型接著劑(丙烯酸系樹脂、橡膠系樹脂)之任一者。於使用熱熔接著劑之情形時,接著方法為熱熔式,於使用感壓型接著劑之情形時,接著方法為感壓。As the adhesive, any of a hot melt adhesive (acrylic resin) and a pressure sensitive adhesive (acrylic resin or rubber resin) can be used. In the case of using a hot melt adhesive, the subsequent method is a hot melt type, and in the case of using a pressure sensitive type adhesive, the next method is pressure sensitive.

根據圖5可知,將接著劑層120設為熱熔接著劑之實施例A、B與將接著劑層120設為感壓型接著劑之比較例1、2相比,於乾燥狀態、水中浸漬24小時及過氧化氫水溶液中浸漬24小時之任一情形下,剝離強度皆變大。5, the examples A and B in which the adhesive layer 120 is a hot-melt adhesive are compared with the comparative examples 1 and 2 in which the adhesive layer 120 is a pressure-sensitive adhesive, and are immersed in a dry state or in water. In any of the 24 hours and the immersion in an aqueous hydrogen peroxide solution for 24 hours, the peel strength became large.

以上,對本發明之實施形態進行了說明,但本發明不僅限定於上述實施形態,當然可進行各種變更。各實施形態不限於獨立之形態,只要技術上可能,則可複合。Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can of course be made. Each embodiment is not limited to an independent form, and may be combined as long as it is technically possible.

100A‧‧‧研磨墊100A‧‧‧ polishing pad

100B‧‧‧研磨墊 100B‧‧‧ polishing pad

101‧‧‧研磨層 101‧‧‧Abrasive layer

101a‧‧‧ 研磨面 101a‧‧‧ Grinding surface

101d‧‧‧第1主面 101d‧‧‧1st main face

101u‧‧‧第2主面 101u‧‧‧2nd main face

102‧‧‧接著層(雙面膠帶) 102‧‧‧Next layer (double-sided tape)

103‧‧‧緩衝層 103‧‧‧buffer layer

110‧‧‧聚合物 110‧‧‧ polymer

110s‧‧‧表面 110s‧‧‧ surface

111‧‧‧微球體 111‧‧‧microspheres

111a‧‧‧外殼 111a‧‧‧ Shell

111b‧‧‧內部空間 111b‧‧‧Internal space

111w‧‧‧內壁面 111w‧‧‧ inner wall

120‧‧‧接著劑層 120‧‧‧ adhesive layer

121‧‧‧接著劑層 121‧‧‧ adhesive layer

125‧‧‧基材 125‧‧‧Substrate

200‧‧‧製造裝置 200‧‧‧ manufacturing equipment

201‧‧‧第1儲槽 201‧‧‧1st storage tank

202‧‧‧第2儲槽 202‧‧‧2nd storage tank

203‧‧‧攪拌槽 203‧‧‧Stirring tank

204‧‧‧模具 204‧‧‧Mold

212‧‧‧容器 212‧‧‧ container

301‧‧‧研磨材料 301‧‧‧Abrasive materials

401‧‧‧泵 401‧‧‧ pump

402‧‧‧泵 402‧‧‧ pump

410‧‧‧切換閥 410‧‧‧Switching valve

420‧‧‧切換閥 420‧‧‧Switching valve

501a‧‧‧流路 501a‧‧‧Flow

501b‧‧‧流路 501b‧‧‧Flow

501c‧‧‧流路 501c‧‧‧flow path

502a‧‧‧流路 502a‧‧‧Flow

502b‧‧‧流路 502b‧‧‧Flow

502c‧‧‧流路 502c‧‧‧Flow

503‧‧‧流路 503‧‧‧Flow

圖1之圖(a)係表示第1實施形態之研磨墊100A之模式性立體圖。圖(b)係第1實施形態之研磨墊100A之模式性剖視圖。圖(c)係第1本實施形態之微球體111之模式性剖視圖。Fig. 1(a) is a schematic perspective view showing the polishing pad 100A of the first embodiment. Fig. (b) is a schematic cross-sectional view of the polishing pad 100A of the first embodiment. Figure (c) is a schematic cross-sectional view of the microsphere 111 of the first embodiment.

圖2係製造本實施形態之研磨墊100A之製造裝置200之模式圖。 Fig. 2 is a schematic view showing a manufacturing apparatus 200 for manufacturing the polishing pad 100A of the present embodiment.

圖3係第2實施形態之研磨墊100B之模式性剖視圖。 Fig. 3 is a schematic cross-sectional view showing a polishing pad 100B according to a second embodiment.

圖4(a)、(b)係表示將研磨層101與緩衝層103貼合之步驟之模式圖。 4(a) and 4(b) are schematic views showing the steps of bonding the polishing layer 101 and the buffer layer 103.

圖5係表示研磨層101與緩衝層103之間之剝離強度之圖表。 FIG. 5 is a graph showing the peel strength between the polishing layer 101 and the buffer layer 103.

Claims (10)

一種研磨墊,其具備: 基材;及 研磨層,其設置於上述基材上,具有 聚胺基甲酸酯樹脂、及 分散於上述聚胺基甲酸酯樹脂中且具有由熱塑性樹脂所構成之外殼之微球體;且 上述微球體之平均粒徑為20 μm以下。A polishing pad having: Substrate; and An abrasive layer disposed on the substrate and having Polyurethane resin, and a microsphere dispersed in the above-mentioned polyurethane resin and having an outer shell composed of a thermoplastic resin; The above microspheres have an average particle diameter of 20 μm or less. 如請求項1之研磨墊,其中 上述研磨層之密度為0.6 g/cm3 以上且0.9 g/cm3 以下。The polishing pad of claim 1, wherein the polishing layer has a density of 0.6 g/cm 3 or more and 0.9 g/cm 3 or less. 如請求項1或2之研磨墊,其中 上述微球體係加熱膨脹性球體,且加熱前之平均粒徑為5 μm以上且20 μm以下。A polishing pad according to claim 1 or 2, wherein The microsphere system heats the expandable spheres, and the average particle diameter before heating is 5 μm or more and 20 μm or less. 如請求項1或2之研磨墊,其中 分散於上述聚胺基甲酸酯樹脂中之上述微球體之平均粒徑為10 μm以上且20 μm以下。A polishing pad according to claim 1 or 2, wherein The above microspheres dispersed in the above-mentioned polyurethane resin have an average particle diameter of 10 μm or more and 20 μm or less. 如請求項1或2之研磨墊,其中 上述研磨層之每單位體積中存在之上述微球體為50000個以上,且 上述研磨層中之上述微球體之佔有體積率為20%以下。A polishing pad according to claim 1 or 2, wherein The above-mentioned microspheres per unit volume of the polishing layer are 50,000 or more, and The volume fraction of the microspheres in the polishing layer is 20% or less. 如請求項1或2之研磨墊,其中 上述研磨層具有上述基材側之第1主面、及於與上述基材為相反側構成研磨面之第2主面,上述第1主面由上述聚胺基甲酸酯樹脂之表面及沿著上述聚胺基甲酸酯樹脂表面被切斷之上述微球體之內壁面構成,且 該研磨墊進而具備雙面膠帶,上述雙面膠帶包含設置於上述基材與上述研磨層之間,且與上述聚胺基甲酸酯樹脂之上述表面及上述微球體之上述內壁面相接的熱熔接著劑層。A polishing pad according to claim 1 or 2, wherein The polishing layer has a first main surface on the substrate side and a second main surface that forms a polishing surface on the opposite side of the substrate, and the first main surface is formed on the surface and the edge of the polyurethane resin. An inner wall surface of the microspheres on which the surface of the polyurethane resin is cut, and The polishing pad further includes a double-sided tape, and the double-sided tape is disposed between the substrate and the polishing layer, and is in contact with the surface of the polyurethane resin and the inner wall surface of the microsphere Hot melt adhesive layer. 如請求項6之研磨墊,其中 上述熱熔接著劑層為丙烯酸系樹脂。The polishing pad of claim 6, wherein The hot-melt adhesive layer is an acrylic resin. 如請求項6之研磨墊,其中 上述基材為不織布材料,且 上述雙面膠帶之基材側之接著劑層為感壓型接著劑層。The polishing pad of claim 6, wherein The above substrate is a non-woven material, and The adhesive layer on the substrate side of the double-sided tape is a pressure-sensitive adhesive layer. 一種研磨墊之製造方法,其具備如下步驟: 準備包含平均粒徑為5 μm以上且20 μm以下且具有由熱塑性樹脂構成之外殼之微球體及預聚物的液體; 於上述液體中混合硬化劑而形成研磨材料;及 一面使上述研磨材料硬化,一面以上述微球體之上述平均粒徑成為1倍以上且未達4倍之方式調整上述平均粒徑而形成研磨層。A method of manufacturing a polishing pad, comprising the steps of: Preparing a liquid comprising microspheres and prepolymers having an average particle diameter of 5 μm or more and 20 μm or less and having an outer shell composed of a thermoplastic resin; Adding a hardener to the liquid to form an abrasive; and The polishing layer is formed by adjusting the average particle diameter so that the average particle diameter of the microspheres is one time or more and less than four times. 如請求項9之研磨墊之製造方法,其中 於準備上述液體之步驟中,上述微球體與預聚物於80℃以下進行混合,且 於形成上述研磨層之步驟中,使上述研磨材料硬化時所使用之模具之溫度為100℃以下,使上述研磨材料硬化所需之時間未達150秒。A method of manufacturing a polishing pad according to claim 9, wherein In the step of preparing the liquid, the microspheres and the prepolymer are mixed at 80 ° C or lower, and In the step of forming the polishing layer, the temperature of the mold used for curing the polishing material is 100 ° C or less, and the time required for curing the polishing material is less than 150 seconds.
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TWI854762B (en) * 2023-02-24 2024-09-01 日商薩克瑟斯有限公司 METHOD FOR GRINDING SEMICONDUCTOR CRYSTAL AND METHOD FOR MANUFACTURING SiC EXTENDED INGOT BY USING SAID GRINDING METHOD

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JP5222586B2 (en) * 2008-02-29 2013-06-26 富士紡ホールディングス株式会社 Polishing pad and method of manufacturing polishing pad
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* Cited by examiner, † Cited by third party
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TWI854762B (en) * 2023-02-24 2024-09-01 日商薩克瑟斯有限公司 METHOD FOR GRINDING SEMICONDUCTOR CRYSTAL AND METHOD FOR MANUFACTURING SiC EXTENDED INGOT BY USING SAID GRINDING METHOD

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