TW201920336A - Sealing resin composition, semiconductor device, and method of manufacturing semiconductor device - Google Patents

Abstract

A sealing resin composition containing an epoxy resin and an inorganic filler, and having a dielectric relaxation value of 20 or less when measured at a frequency of 0.001 Hz in a cured state.

Description

Resin composition for sealing, semiconductor device, and method for manufacturing semiconductor device

The present invention relates to a sealing resin composition, a semiconductor device, and a method for manufacturing a semiconductor device.

A power semiconductor element is a type of semiconductor element that is mainly used for controlling the voltage or frequency of electric power and converting from DC to AC or from AC to DC. It uses electric power from electronic devices, motors, and power generation devices as power sources. Used in various fields. Therefore, a semiconductor device (power semiconductor device) including a power semiconductor element is required to have electrical reliability that can withstand use under high voltage and high current conditions. For example, the leakage current generated in the High Temperature Reverse Bias (HTRB) test is required to be sufficiently small (for example, refer to Patent Document 1). [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2017-45747

[Problems to be Solved by the Invention]

As a resin composition for sealing a power semiconductor element, a resin composition containing an epoxy resin such as an epoxy resin is widely used. In order to improve the electrical reliability of power semiconductor devices, studies have been conducted on resin compositions suitable for sealing power semiconductor devices from the viewpoints of glass transition temperature and impurity content, but there are also unexplainable parts of these characteristics. . The present invention has been made in view of the foregoing circumstances, and an object thereof is to provide a sealing resin composition capable of manufacturing a semiconductor device having excellent electrical reliability, and a semiconductor device and a method for manufacturing the semiconductor device using the same. [Means for solving problems]

Means for solving the problems include the following embodiments. <1> A resin composition for sealing, which contains an epoxy resin and an inorganic filler, and has a dielectric relaxation value of 20 or less when measured at a frequency of 0.001 Hz in a cured state. <2> The sealing resin composition according to <1>, which is used for sealing a power semiconductor element. <3> A semiconductor device comprising a support, a semiconductor element disposed on the support, and a cured product of the sealing resin composition according to <1> or <2>, which seals the semiconductor element. . <4> A method for manufacturing a semiconductor device, comprising: a step of arranging a semiconductor element on a support; and a step of sealing the semiconductor element with a sealing resin composition according to <1> or <2>. [Effect of the invention]

According to the present invention, there are provided a sealing resin composition capable of manufacturing a semiconductor device having excellent electrical reliability, a semiconductor device using the same, and a method for manufacturing a semiconductor device.

Hereinafter, the form for implementing this invention is demonstrated in detail. However, the present invention is not limited to the following embodiments. In the following embodiments, the constituent elements (including the element steps, etc.) are not necessary except for the case where they are specifically stated. The same applies to numerical values and ranges, and does not limit the present invention.

In the present disclosure, the term "step" includes the step in addition to the step that is independent of the other steps, even if it cannot be clearly distinguished from the other steps, as long as the purpose of the step is achieved. In the present disclosure, the numerical values indicated by "~" in the numerical range including "~" are used as the minimum value and the maximum value, respectively. In the numerical range described in this disclosure stepwise, an upper limit value or a lower limit value described in one numerical range may be replaced with an upper limit value or a lower limit value in another numerical range described in a stepwise manner. In addition, in the numerical range described in this disclosure, the upper limit value or lower limit value of the numerical range may be replaced with the value shown in the embodiment. In the present disclosure, each component may also include a plurality of compatible substances. When there are a plurality of substances corresponding to each component in the composition, unless otherwise specified, the content rate or content of each component refers to the total content rate or content of the plurality of substances present in the composition. In the present disclosure, a plurality of particles conforming to each component may be included. In the case where there are a plurality of types of particles corresponding to each component in the composition, the particle size of each component refers to the value of a mixture of the plurality of types of particles present in the composition unless otherwise specified.

<Resin composition for sealing> The sealing resin composition of the present disclosure contains an epoxy resin and an inorganic filler, and has a dielectric relaxation value of 20 or less when measured at a frequency of 0.001 Hz in a cured state.

As a result of studies conducted by the present inventors, it is found that the dielectric relaxation value measured in a state where the sealing resin composition is cured is related to the leakage current (μA) generated in the high-temperature reverse bias test. Furthermore, it was found that the correlation was not confirmed at a frequency (1 MHz) at the time of normal dielectric constant measurement, and was confirmed at a frequency lower than 0.001 Hz when measured. The reason is not necessarily clear, but it is presumed that the dielectric constant shift (dielectric coefficient value) caused by time is effective for leakage current.

Based on the above findings, further research revealed that the semiconductor device using a sealing resin composition having a dielectric relaxation value of 20 or less measured at a frequency of 0.001 Hz in a cured state was generated during a high-temperature reverse bias test. The leakage current is sufficiently small, and the electrical reliability is excellent.

In the present disclosure, the dielectric relaxation value measured in a state where the sealing resin composition is cured is a value measured by a low-frequency side dielectric constant measurement. From the viewpoint of the electrical reliability of the semiconductor device, the dielectric relaxation value measured at a frequency of 0.001 Hz is 20 or less, preferably 18 or less, and more preferably 16 or less. In addition, the maximum value of the dielectric relaxation value obtained at a frequency between 0 Hz and 0.01 Hz is preferably 40 or less.

Examples of a method for obtaining a sealing resin composition having a dielectric relaxation value of 20 or less measured at a frequency of 0.001 Hz in a cured state include increasing the amount of an inorganic filler (for example, a resin composition for sealing) 70% by volume or more); reducing the specific surface area of the inorganic filler contained in the sealing resin composition (for example, the specific surface area measured by the Brunauer Emmett and Teller (BET) method is 3.28 m ² / g or less); a method of treating the surface of the inorganic filler with a specific coupling agent (for example, a coupling agent having -NH ₂ or -SH); However, the present disclosure is not limited to these methods.

(Epoxy resin) The type of the epoxy resin contained in the sealing resin composition is not particularly limited, and can be selected from ordinary users in the sealing resin composition. Specific examples include phenol compounds selected from the group consisting of phenol, cresol, xylenol, resorcinol, catechol, bisphenol A, and bisphenol F, and α-naphthol, β-naphthol, and diphenol. At least one phenolic compound in the group consisting of naphthol compounds such as hydroxynaphthalene and aliphatic aldehyde compounds such as formaldehyde, acetaldehyde, and propionaldehyde are condensed or co-condensed under an acidic catalyst to obtain a novolac resin and the novolac Novolac-type epoxy resin (phenol novolac-type epoxy resin, o-cresol novolac-type epoxy resin, etc.) obtained by epoxidizing the resin; the phenolic compound and aromatics such as benzaldehyde, salicylaldehyde, etc. A triphenylmethane type epoxy resin obtained by condensing or co-condensing an aldehyde compound under an acidic catalyst to obtain a triphenylmethane type phenol resin and epoxidizing the triphenylmethane type phenol resin; And a copolymer epoxy resin obtained by co-condensing a naphthol compound and an aldehyde compound under an acidic catalyst to obtain a novolak resin and epoxidizing the novolak resin; as diglycidyl such as bisphenol A, bisphenol F Diphenyl ether Methane type epoxy resin; Biphenyl type epoxy resin as diglycidyl ether of alkyl-substituted or unsubstituted biphenol; Styrenic type as diglycidyl ether of stilbene phenol compound Epoxy resins; sulfur atom-containing epoxy resins as diglycidyl ethers such as bisphenol S; epoxy resins as glycidyl ethers of alcohols such as butanediol, polyethylene glycol, and polypropylene glycol; as o-benzene Glycidyl ester type epoxy resins of glycidyl esters of polycarboxylic acids such as dicarboxylic acid, isophthalic acid, tetrahydrophthalic acid, etc .; aniline, diaminodiphenylmethane, isotricyanic acid, etc. A glycidylamine-type epoxy resin obtained by replacing an active hydrogen bonded to a nitrogen atom with a glycidyl group; a dicyclopentadiene-type ring obtained by epoxidizing a co-condensation resin of dicyclopentadiene and a phenol compound Oxygen resin; diepoxidized vinylcyclohexene obtained by epoxidizing olefinic bonds in the molecule, 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylic acid ester, 2- (3,4-Epoxy) cyclohexyl-5,5-spiro (3,4-epoxy) cyclohexane-m-di Alicyclic epoxy resin such as alkane; p-xylene modified epoxy resin as glycidyl ether of p-xylene modified phenol resin; m-xylene modified ring of glycidyl ether as m-xylene modified phenol resin Oxygen resin; terpene modified epoxy resin as a glycidyl ether of a terpene modified phenol resin; dicyclopentadiene modified epoxy resin as a glycidyl ether of a dicyclopentadiene modified phenol resin; as Cyclopentadiene-modified glycidyl ether of cyclopentadiene-modified epoxy resin; polycyclic aromatic-ring modified phenol resin of glyceryl ether-modified polycyclic aromatic ring-modified epoxy resin; as naphthalene-containing Glycidyl ether naphthalene epoxy resin of cyclic phenol resin; halogenated phenol novolac epoxy resin; hydroquinone epoxy resin; trimethylolpropane epoxy resin; Linear aliphatic epoxy resins obtained by oxidizing olefin bonds; aralkyl-type epoxy resins obtained by epoxidizing aralkyl-type phenol resins such as phenol aralkyl resins and naphthol aralkyl resins. Furthermore, epoxy resins, such as an epoxy resin of a silicone resin, an epoxy resin of an acrylic resin, etc. are mentioned. These epoxy resins may be used singly or in combination of two or more.

The epoxy equivalent (molecular weight / number of epoxy groups) of the epoxy resin is not particularly limited. From the viewpoint of balancing various characteristics such as formability, reflow resistance, and electrical reliability, it is preferably 100 g / eq to 1000 g / eq, and more preferably 150 g / eq to 500 g / eq.

The epoxy equivalent of an epoxy resin is a value measured by the method based on Japanese Industrial Standards (JIS) K 7236: 2009.

When the epoxy resin is solid, its softening point or melting point is not particularly limited. From the viewpoint of moldability and reflow resistance, it is preferably from 40 ° C to 180 ° C, and from the viewpoint of handleability during preparation of the sealing resin composition, more preferably from 50 ° C to 130 ° C.

The melting point of the epoxy resin is a value measured by differential scanning calorimetry (DSC), and the softening point of the epoxy resin is measured by a method (ring and ball method) based on JIS K 7234: 1986. Value.

From the viewpoints of strength, fluidity, heat resistance, moldability, etc., the content of the epoxy resin in the sealing resin composition is preferably 0.5% to 50% by mass, and more preferably 2% to 30% by mass. %.

(Hardener) The resin composition for sealing may contain a hardener. The type of the hardener is not particularly limited, and examples thereof include a phenol hardener, an amine hardener, an acid anhydride hardener, a polythiol hardener, a polyamidoamine hardener, an isocyanate hardener, and a block isocyanate hardener. From the viewpoint of improving heat resistance, those having two or more phenolic hydroxyl groups (phenol hardener) in one molecule are preferred.

Specific examples of the phenol hardener include polyphenol compounds such as resorcinol, catechol, bisphenol A, bisphenol F, and substituted or unsubstituted biphenol. Phenol compounds such as phenol, xylenol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol; and naphthalenes such as α-naphthol, β-naphthol, and dihydroxynaphthalene A novolac-type phenol resin obtained by condensing or co-condensing at least one phenolic compound in a group consisting of phenolic compounds with aldehyde compounds such as formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde, and salicaldehyde under an acidic catalyst; Phenolic compounds such as phenol aralkyl resins such as dimethoxy-p-xylene, bis (methoxymethyl) biphenyl, and aralkyl-type phenol resins such as naphthol aralkyl resin; p-xylene Or m-xylene modified phenol resin; melamine modified phenol resin; terpene modified phenol resin; dicyclopentadiene-type phenol resin synthesized by copolymerization of the phenolic compound and dicyclopentadiene; and Cyclopentadiene-type naphthalene phenol resin; cyclopentadiene modified phenol resin; polycyclic aromatic ring modified phenol resin; biphenyl Phenol resin; triphenylmethane type phenol resin obtained by condensing or co-condensing the phenolic compound with an aromatic aldehyde compound such as benzaldehyde, salaldehyde, etc. under an acidic catalyst; obtained by copolymerizing these two or more Phenol resin and so on. These phenol hardeners may be used alone or in combination of two or more.

The functional group equivalent (in the case of a phenol hardener, a hydroxyl equivalent) is not particularly limited. From the viewpoint of balance of various characteristics such as formability, reflow resistance, and electrical reliability, it is preferably 70 g / eq to 1000 g / eq, and more preferably 80 g / eq to 500 g / eq.

The functional group equivalent (hydroxy equivalent in the case of a phenol hardener) of the hardener is a value measured by a method based on JIS K 0070: 1992.

In the case where the hardener is solid, its softening point or melting point is not particularly limited. From the viewpoint of moldability and reflow resistance, it is preferably from 40 ° C to 180 ° C, and from the viewpoint of handleability during the production of the sealing resin composition, more preferably from 50 ° C to 130 ° C.

The melting point or softening point of the hardener is a value measured in the same manner as the melting point or softening point of the epoxy resin.

The blending ratio of the epoxy resin and the hardener is not particularly limited. From the viewpoint of suppressing each of the unreacted components to a small amount, it is preferable that the ratio of the number of functional groups of the hardener to the number of epoxy groups of the epoxy resin (the number of epoxy groups of the epoxy resin / the number of functional groups of the hardener) ) Is set so as to fall within the range of 0.5 to 2.0, more preferably set so as to fall within the range of 0.6 to 1.3, and even more preferably set to fall within the range of 0.8 to 1.2.

(Hardening accelerator) The resin composition for sealing may contain a hardening accelerator. The type of the hardening accelerator is not particularly limited, and can be selected according to the type of the epoxy resin, desired characteristics of the resin composition for sealing, and the like. Examples of the hardening accelerator include 1,5-diazabicyclo [4.3.0] nonene-5 (1,5-Diazabicyclo [4.3.0] nonene-5, DBN), and 1,8-diazapine Diazabicyclic olefins such as bicyclo [5.4.0] undecene-7 (1,8-Diazabicyclo [5.4.0] undecene-7, DBU), 2-methylimidazole, 2-phenylimidazole, 2- Cyclic amidine compounds such as phenyl-4-methylimidazole, 2-heptadecylimidazole; derivatives of the cyclic amidine compounds; phenol novolac salts of the cyclic amidine compounds or their derivatives; and These compounds are added with maleic anhydride, 1,4-benzoquinone, 2,5-toluone, 1,4-naphthoquinone, 2,3-dimethylbenzoquinone, and 2,6-dimethylbenzoquinone. , 2,3-dimethoxy-5-methyl-1,4-benzoquinone, 2,3-dimethoxy-1,4-benzoquinone, phenyl-1,4-benzoquinone and other quinone compounds Compounds with intramolecular polarization formed by compounds with π bond such as diazophenylmethane; tetraphenylboronate of DBU, tetraphenylboronate of DBN, 2-ethyl-4-methylimidazole Cyclic phosphonium compounds such as tetraphenylboronate and tetraphenylboronate of N-methylmorpholine; pyridine, triethylamine, triethylenediamine, benzyldimethylamine, triethanolamine, dimethyl Tertiary amine compounds such as ethyl alcohol, tris (dimethylaminomethyl) phenol; derivatives of the tertiary amine compounds; tetra-n-butylammonium acetate, tetra-n-butylammonium phosphate, tetraethyl acetate Ammonium salt compounds such as ammonium, tetra-n-hexylammonium benzoate, tetrapropylammonium hydroxide; triphenylphosphine, diphenyl (p-toluene) phosphine, tri (alkylphenyl) phosphine, tris (alkoxybenzene) Yl) phosphine, tris (alkyl / alkoxyphenyl) phosphine, tris (dialkylphenyl) phosphine, tris (trialkylphenyl) phosphine, tris (tetraalkylphenyl) phosphine, tris (di Alkoxyphenyl) phosphine, tris (trialkoxyphenyl) phosphine, tris (tetraalkoxyphenyl) phosphine, trialkylphosphine, dialkylarylphosphine, alkyldiarylphosphine, etc. Phosphine; phosphine compounds such as the complex of tertiary phosphine and organoboron; the tertiary phosphine or the phosphine compound with maleic anhydride, 1,4-benzoquinone, 2,5-toluenequinone, 1,4-naphthoquinone, 2,3-dimethylbenzoquinone, 2,6-dimethylbenzoquinone, 2,3-dimethoxy-5-methyl-1,4-benzoquinone, 2, Intramolecular polarization formed by the addition of quinone compounds such as 3-dimethoxy-1,4-benzoquinone, phenyl-1,4-benzoquinone, and diazophenylmethane, etc. A compound; wherein the tertiary phosphine or the phosphine compound is mixed with 4-bromophenol, 3-bromophenol, 2-bromophenol, 4-chlorophenol, 3-chlorophenol, 2-chlorophenol, 4-iodophenol, 3-iodophenol, 2-iodophenol, 4-bromo-2-methylphenol, 4-bromo-3-methylphenol, 4-bromo-2,6-dimethylphenol, 4-bromo-3,5 -Dimethylphenol, 4-bromo-2,6-di-tert-butylphenol, 4-chloro-1-naphthol, 1-bromo-2-naphthol, 6-bromo-2-naphthol, 4 Compounds with intramolecular polarization obtained by reacting halogenated phenol compounds such as -bromo-4'-hydroxybiphenyl through dehydrohalogenation after reaction; tetra-substituted fluorene such as tetraphenylphosphonium and tetra-p-toluoborate are absent. Tetra-substituted phosphonium and tetra-substituted borate of phenyl bonded to a boron atom; salts of tetraphenylphosphonium with a phenol compound, and the like.

When the resin composition for sealing contains a hardening accelerator, the amount is preferably from 0.1 to 30 parts by mass based on 100 parts by mass of the resin component (the total of the epoxy resin and the hardener contained as necessary, the same below). Parts, more preferably 1 part by mass to 15 parts by mass. When the quantity of a hardening accelerator is 0.1 mass part or more with respect to 100 mass parts of resin components, there exists a tendency for favorable hardening in a short time. When the amount of the hardening accelerator is 30 parts by mass or less with respect to 100 parts by mass of the resin component, there is a tendency that a good molded article having a hardening speed that is not too fast can be obtained.

(Inorganic Filler) The type of the inorganic filler contained in the sealing resin composition is not particularly limited, and can be selected from ordinary users in the sealing resin composition. Specific examples include fused silica, crystalline silica, glass, alumina, calcium carbonate, zirconium silicate, calcium silicate, silicon nitride, aluminum nitride, boron nitride, beryllium oxide, and zirconia. , Zircon, forsterite, frozen stone, spinel, mullite, titanium dioxide, talc, clay, mica and other inorganic materials. An inorganic filler having a flame retardant effect may also be used. Examples of the inorganic filler having a flame-retardant effect include aluminum hydroxide, magnesium hydroxide, composite metal hydroxides such as a composite hydroxide of magnesium and zinc, and zinc borate.

Among the inorganic fillers, from the viewpoint of decreasing the linear expansion coefficient, preferred is silicon dioxide such as fused silica, and from the viewpoint of high thermal conductivity, alumina is preferred. The inorganic fillers may be used singly or in combination of two or more.

The content rate of the inorganic filler in the sealing resin composition is not particularly limited. From the viewpoint of fluidity and strength, 30% to 90% by volume of the entire sealing resin composition is preferable, and 50% to 85% by volume is more preferable. When the content of the inorganic filler is 30% by volume or more of the entire sealing resin composition, there is a tendency that the characteristics such as the coefficient of thermal expansion, the coefficient of thermal conductivity, and the coefficient of elasticity of the cured product are further improved. When the content of the inorganic filler is 90% by volume or less of the entire sealing resin composition, an increase in the viscosity of the sealing resin composition is suppressed, fluidity is further improved, and moldability is more favorable.

When the inorganic filler is particulate, the average particle diameter is not particularly limited. For example, the volume average particle diameter of the entire inorganic filler is preferably 0.2 μm to 10 μm, and more preferably 0.5 μm to 5 μm. When the volume average particle diameter is 0.2 μm or more, an increase in viscosity of the sealing resin composition tends to be further suppressed. When the volume average particle diameter is 10 μm or less, there is a tendency that the filling property to a narrow gap is further improved. The volume average particle diameter of the inorganic filler can be measured as a volume average particle diameter (D50) by a laser diffraction scattering method particle size distribution measuring device.

(Coupling agent) The resin composition for sealing may contain a coupling agent. Examples of the coupling agent include silane-based compounds such as epoxy silane, mercapto silane, amine silane, alkyl silane, sulfonylurea silane, and vinyl silane, titanium-based compounds, aluminum chelate compounds, and aluminum / zirconium-based compounds. And other well-known coupling agents.

When the sealing resin composition contains a coupling agent, the amount of the coupling agent is preferably 0.05 to 5 parts by mass, and more preferably 0.1 to 2.5 parts by mass based on 100 parts by mass of the inorganic filler. When the amount of the coupling agent is 0.05 parts by mass or more with respect to 100 parts by mass of the inorganic filler, the adhesiveness with the frame tends to be further improved. When the amount of the coupling agent is 5 parts by mass or less based on 100 parts by mass of the inorganic filler, the moldability of the package tends to be further improved.

(Ion Exchanger) The resin composition for sealing may include an ion exchanger. In particular, when a sealing resin composition is used as a sealing molding material, it is preferable to include an ion exchanger from the viewpoint of improving the moisture resistance and high-temperature storage characteristics of an electronic component device including a sealed element. The ion exchanger is not particularly limited, and conventionally known ones can be used. Specific examples include hydrotalcite compounds, hydroxides containing at least one element selected from the group consisting of magnesium, aluminum, titanium, zirconium, and bismuth. The ion exchanger may be used singly or in combination of two or more kinds. Among them, a hydrotalcite represented by the following general formula (A) is preferred.

Mg _(1-X) Al _X (OH) ₂ (CO ₃ ) _{X / 2} ･ mH ₂ O ······ (A) (0 <X ≦ 0.5, m is a positive number)

When the sealing resin composition contains an ion exchanger, the content is not particularly limited as long as the content is a sufficient amount to capture a halogen ion. For example, it is preferably 0.1 to 30 parts by mass, and more preferably 1 to 5 parts by mass based on 100 parts by mass of the resin component.

(Releasing Agent) From the viewpoint of obtaining a good release property from the mold at the time of molding, the sealing resin composition may contain a releasing agent. The release agent is not particularly limited, and a conventionally known one can be used. Specific examples include higher fatty acids such as palm wax, octadecanoic acid, and stearic acid, ester-based waxes such as higher fatty acid metal salts, and octadecanoate esters, and polyolefin-based waxes such as oxidized polyethylene and non-oxidized polyethylene. Wait. The release agent may be used alone or in combination of two or more.

When the resin composition for sealing contains a mold release agent, the amount is preferably 0.01 to 10 parts by mass, and more preferably 0.1 to 5 parts by mass based on 100 parts by mass of the resin component. When the amount of the release agent is 0.01 parts by mass or more with respect to 100 parts by mass of the resin component, there is a tendency that the mold release property can be sufficiently obtained. When it is 10 parts by mass or less, there is a tendency that a better adhesiveness can be obtained.

(Flame retardant) The resin composition for sealing may contain a flame retardant. The flame retardant is not particularly limited, and a conventionally known one can be used. Specific examples include organic compounds, inorganic compounds, and metal hydroxides containing a halogen atom, an antimony atom, a nitrogen atom, or a phosphorus atom. The flame retardant may be used singly or in combination of two or more kinds.

When the sealing resin composition contains a flame retardant, the amount is not particularly limited as long as the amount is a sufficient amount to obtain a desired flame retardant effect. For example, it is preferably 1 to 30 parts by mass, and more preferably 2 to 15 parts by mass based on 100 parts by mass of the resin component.

(Colorant) The resin composition for sealing may further contain a colorant. Examples of the colorant include known coloring agents such as carbon black, organic dyes, organic pigments, titanium oxide, lead, and iron oxide. The content of the colorant can be appropriately selected depending on the purpose and the like. The colorants may be used alone or in combination of two or more.

(Stress Relief Agent) The resin composition for sealing may contain a stress relief agent such as silicone oil or silicone rubber particles. By including a stress relieving agent, warping deformation of the package and occurrence of package cracks can be further reduced. As a stress relaxation agent, the well-known well-known stress relaxation agent (flexible agent) is mentioned. Specific examples include thermoplastic elastomers such as silicone-based, styrene-based, olefin-based, urethane-based, polyester-based, polyether-based, polyamide-based, polybutadiene-based, and natural rubber ( natural rubber (NR), acrylonitrile butadiene rubber (NBR), acrylic rubber, urethane rubber, silicone powder and other rubber particles, methyl methacrylate-styrene-butadiene Copolymer (Methacrylate methyl styrene butadiene, MBS), methyl methacrylate-silicone copolymer, methyl methacrylate-butyl acrylate copolymer and other rubber particles having a core-shell structure. The stress relieving agents may be used singly or in combination of two or more kinds.

(Method for Producing Sealing Resin Composition) The method for producing the sealing resin composition is not particularly limited. As a general method, the method of fully mixing the components of a predetermined compounding quantity with a mixer, etc., and melt-kneading with a grinding roll, an extruder, etc., cooling, and pulverizing is mentioned. More specifically, for example, a method of uniformly stirring and mixing a predetermined amount of the ingredients, heating in advance to 70 ° C to 140 ° C, kneading and cooling with a kneader, a roll, an extruder, or the like, Crush.

The sealing resin composition is preferably solid at normal temperature and pressure (for example, 25 ° C., atmospheric pressure). The shape of the sealing resin composition when it is solid is not particularly limited, and examples thereof include powdery, granular, and flake shapes.

(Application of Resin Composition for Sealing) The application of the sealing resin composition is not particularly limited, and it can be used for various semiconductor devices. As described above, the sealing resin composition of the present disclosure is excellent in electrical reliability when used under high voltage and high current conditions. Therefore, it can be used particularly well for sealing power semiconductor devices, and also for sealing semiconductor devices used for calculation, storage, and the like.

<Semiconductor Device> The semiconductor device of the present disclosure includes a support, a semiconductor element disposed on the support, and a cured product of the sealing resin composition that seals the semiconductor element.

There are no particular restrictions on the types of supports and semiconductor elements used in semiconductor devices, and ordinary users can be used in the manufacture of semiconductor devices. Since the semiconductor device of the present disclosure uses the sealing resin composition for sealing a semiconductor element, it has excellent electrical reliability when used under high voltage and high current conditions. Therefore, the semiconductor device can be particularly preferably used as a power semiconductor device, and can also be a semiconductor device used for calculation, storage, and the like.

<Method for Manufacturing Semiconductor Device> The method for manufacturing a semiconductor device according to the present disclosure includes a step of disposing a semiconductor element on a support, and a step of sealing the semiconductor element with the sealing resin composition.

There is no particular limitation on the method for performing each of the steps, and it can be performed by a general method. In addition, the types of the support and the semiconductor element used in the manufacture of the semiconductor device are not particularly limited, and ordinary users can be used in the manufacture of the semiconductor device. The method for manufacturing a semiconductor device of the present disclosure can manufacture a semiconductor device having excellent electrical reliability when used under high voltage and high current conditions by using the sealing resin composition for sealing a semiconductor element. Therefore, it is particularly preferable as a method of manufacturing a power semiconductor device, and may also be a method of manufacturing a semiconductor device used for calculation, storage, and the like. [Example]

Hereinafter, the present disclosure will be specifically described by examples, but the scope of the present disclosure is not limited to these examples.

(Preparation of Sealing Resin Composition) The components shown below were blended at the blending ratio (parts by mass) shown in Table 1, and roll-kneaded under conditions of a mixing temperature of 80 ° C and a mixing time of 10 minutes. A resin composition for sealing is prepared.

[Table 1]

The details of each component shown in the table are as follows. · Epoxy resin A ··· α-hydroxyphenyl-ω-hydrogen-poly (n = 1-7) (biphenyldimethylene-hydroxyphenylene) and 1-chloro-2,3-ring Polycondensate of oxypropane (CER-3000L, Nippon Kayaku Co., Ltd.) · Epoxy resin B ... 2,2'-dimethyl-4,4'-dihydroxy-5,5'-di-di Reaction product of tributyldiphenyl sulfide and chloromethoxysilane (YSLV-120TE, Nippon Steel & Sumikin Chemical Co., Ltd.) · Epoxy resin C ··· Tetramethylbiphenol type solid epoxy resin ( YX-4000, Mitsubishi Chemical Corporation) · Epoxy resin D ··· Mixture of α solid epoxy resin and 4,4'-biphenol type epoxy resin (YX-7399, Mitsubishi Chemical Corporation) · Hardening Additives ... Polycondensates of phenol and p-xylene glycol dimethyl ether (MEH-7800, Meiwa Chemical Co., Ltd.) · Hardener accelerator a '... Tri-p-tolylphosphine and 1,4-benzene Adduct of quinone · Hardener accelerator b '·· Adduct of triphenylphosphine and 1,4-benzoquinone · Coupling agent a ... 3- (phenylamino) propyltrimethoxy Silane (KBM-573, Shin-Etsu Chemical Industry Co., Ltd.) · Coupling agent b ··· Methyltris Oxysilane (KBM-13, Shin-Etsu Chemical Industry Co., Ltd.) · Coupling agent c ··· 3-Glycidyloxypropyltrimethoxysilane (KBM-403, Shin-Etsu Chemical Industry Co., Ltd.) · Coupling agent d ··· Diphenyldimethoxysilane (KBM-202SS, Shin-Etsu Chemical Industry Co., Ltd.) · Inorganic Filling Materials ··· Amorphous silicon dioxide (including less than 5% crystalline) (FB-9454, Electric (DENKA) Co., Ltd.)

(Measurement of Dielectric Relaxation Value) Using the prepared resin composition for sealing, a test piece for evaluating the dielectric relaxation value was prepared. Specifically, it is performed by using a transfer molding machine to mold a sealing resin composition under conditions of a mold temperature of 180 ° C, a molding pressure of 6.9 MPa, and a curing time of 120 sec, and then curing at 175 ° C for 5 hours. . The size of the test piece was a circular plate having a diameter of 50 mm and a thickness of 1 mm.

The test piece was used to measure the dielectric relaxation value. The measurement was performed using a dielectric relaxation measurement device including a combination of an impedance measurement device having a dielectric coefficient measurement interface and a dynamic viscoelasticity measurement device shown in FIG. 1. In FIG. 1, 1 a indicates a dielectric coefficient measurement interface, 1 b indicates an impedance measurement device, 2 indicates a dynamic viscoelasticity measurement device, and 2 a indicates an electrode for measurement. That is, in the dielectric relaxation measurement device, a dielectric coefficient measurement interface 1a arranged on the impedance measurement device 1b is connected to the dynamic viscoelasticity measurement device 2, and a measurement electrode is mounted on the dynamic viscoelasticity measurement device 2. 2a. The measurement is performed by sandwiching a sample to be measured between the measurement electrodes 2a.

In this embodiment, as the interface 1a for measuring the dielectric constant, a dielectric constant measuring interface of type 1296 from the British company Solartron is used, and as the impedance measuring device 1b, a type 1255B from the British solid power company is used. As an impedance analyzer, as the dynamic viscoelasticity measuring device 2, RSA from TA Instruments was used. The measurement is based on the time-temperature conversion rule (WLF formula), and is performed up to the low dielectric side (frequency 0.0001 Hz to 0.00001 Hz), and the measurement finally reaches the dielectric coefficient.

(High-temperature reverse bias test) Diodes were bonded to a discrete package (TO-247) with solder, Al wires were further bonded, and then sealed with a sealing resin composition to produce an evaluation package. The package was placed in a high-temperature dryer, and a voltage was applied in consideration of the thermal capacity of the package obtained using a transition thermal analysis device (T3Ster). In this embodiment, the temperature in the high-temperature dryer is set to 170 ° C, and the voltage is set to 1280 V. The package was placed in a high-temperature dryer for 1000 hours under a voltage applied state, and the leakage current (μA) was measured using a curve tracer (CS-3200) of Iwasaki Communication Co., Ltd.

The measured values of the dielectric relaxation value and the results of the high temperature reverse bias test (HTRB test) are shown in Table 1, FIG. 2 and FIG. 3. FIG. 2 shows the measured values of the dielectric relaxation value (frequency 0.001 Hz) for samples made from the sealing resin compositions of Examples 1 to 3 and Comparative Examples 1 to 3 as the X-coordinate and the high temperature A scatter diagram showing the leakage current (μA) in the reverse bias test as the Y coordinate. FIG. 3 shows the measured values of the dielectric relaxation value (frequency 1 MHz) of the samples made from the sealing resin composition of Example 2, Example 3, and Comparative Example 1 and Comparative Example 2 as the X coordinate and the high temperature. A scatter diagram showing the leakage current (μA) in the reverse bias test as the Y coordinate.

As shown in FIG. 2, a positive correlation was confirmed between the dielectric relaxation value measured at a frequency of 0.001 Hz and the leakage current (μA) in the high-temperature reverse bias test. When the dielectric relaxation value measured at a frequency of 0.001 Hz was 20 or less, the results of the high-temperature reverse bias test were good.

As shown in FIG. 3, no correlation was found between the dielectric relaxation value measured at a frequency of 1 MHz and the leakage current (μA) in the high-temperature reverse bias test.

From the above, it is understood that the sealing resin composition of the present disclosure can produce a semiconductor device having excellent electrical reliability.

The disclosure of Japanese Patent Application No. 2017-156440 is incorporated herein by reference in its entirety. All documents, patent applications, and technical standards described in this specification are incorporated into this specification by reference to the same extent as if they were specifically and individually described and incorporated into each document and patent by reference. Application and technical standards.

1a‧‧‧ interface for dielectric constant measurement

1b‧‧‧Impedance measuring device

2‧‧‧Dynamic viscoelasticity measuring device

2a‧‧‧Measuring electrode

FIG. 1 is a schematic diagram showing an example of a configuration of a dielectric relaxation measurement device. FIG. 2 is a scatter diagram showing a correlation between a dielectric relaxation value (frequency of 0.001 Hz) and a high-temperature reverse bias test result of the sealing resin composition produced in the example. FIG. 3 is a scatter diagram showing the correlation between the dielectric relaxation value (frequency 1 MHz) of the sealing resin composition produced in the example and the result of the high-temperature reverse bias test.

Claims (4)

A sealing resin composition containing an epoxy resin and an inorganic filler, and having a dielectric relaxation value of 20 or less when measured at a frequency of 0.001 Hz in a cured state. The sealing resin composition according to item 1 of the scope of patent application, which is used to seal a power semiconductor element. A semiconductor device includes: a support body; a semiconductor element disposed on the support body; and a hardened product of the sealing resin composition according to item 1 or 2 of the patent application scope, which seals the Semiconductor element. A method for manufacturing a semiconductor device, comprising: a step of arranging a semiconductor element on a support; and a step of sealing the semiconductor element with a sealing resin composition according to the first or second aspect of the patent application.