TW201911984A - Circuit board and manufacturing method thereof - Google Patents
Circuit board and manufacturing method thereof Download PDFInfo
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- TW201911984A TW201911984A TW106128451A TW106128451A TW201911984A TW 201911984 A TW201911984 A TW 201911984A TW 106128451 A TW106128451 A TW 106128451A TW 106128451 A TW106128451 A TW 106128451A TW 201911984 A TW201911984 A TW 201911984A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4697—Manufacturing multilayer circuits having cavities, e.g. for mounting components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
- H05K1/0206—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
Description
本發明涉及一種電路板以及該電路板的製作方法。The invention relates to a circuit board and a manufacturing method of the circuit board.
近年來,電子產品被廣泛應用在日常工作和生活中,輕、薄、小的電子產品越來越受到歡迎。電路板作為電子產品的主要部件,其佔據了電子產品的較大空間,故,電路板的體積在很大程度上影響了電子產品的體積,大體積的電路板勢必難以符合電子產品輕、薄、短、小之趨勢。In recent years, electronic products have been widely used in daily work and life, and light, thin and small electronic products have become more and more popular. As the main component of electronic products, circuit boards occupy a large space of electronic products. Therefore, the volume of circuit boards affects the volume of electronic products to a large extent. Large-volume circuit boards are bound to be difficult to meet the lightness and thinness of electronic products. , Short, small trends.
藉由將電路板的被動元件(如電阻、電容等)內埋在電路基板的內部有利於減少電路板的整體厚度,從而減少電子產品的厚度。然而,內埋的被動元件工作中產生的熱量將難以散熱出去,這會導致電路板核心層熱膨脹,從而損壞電路板。By burying the passive components (such as resistors and capacitors) of the circuit board inside the circuit substrate, it is beneficial to reduce the overall thickness of the circuit board, thereby reducing the thickness of the electronic product. However, the heat generated during the operation of the embedded passive components will be difficult to dissipate, which will cause the core layer of the circuit board to expand thermally and damage the circuit board.
有鑑於此,有必要提供一種電路板,能夠解決以上問題。In view of this, it is necessary to provide a circuit board capable of solving the above problems.
另,還有必要提供一種所述電路板的製作方法。In addition, it is necessary to provide a method for manufacturing the circuit board.
本發明提供一種電路板的製作方法,包括:提供一電路基板,該電路基板包括依序壓合的一第一單面板、一導熱基材以及一第二單面板,一空腔貫穿該第一單面板,該第一單面板包括遠離該導熱基材設置的一第一銅箔,該第二單面板包括遠離該導熱基材設置的一第二銅箔;在該第一銅箔以及該第二銅箔上電鍍形成一第一電鍍銅層;蝕刻所述第一電鍍銅層以及位於所述第一電鍍銅層之間的該第一銅箔以及該第二銅箔以得到一第一導電線路層和一第二導電線路層;在該空腔中置入一電子元件,並在該第一導電線路層和該第二導電線路層上分別壓合一第一介電層和一第二介電層;在所述第一介電層以及第二介電層上分別形成一第三導電線路層和一第四導電線路層,該第三導電線路層與該第一導電線路層以及該電子元件電性連接,該第四導電線路層與該第二導電線路層電性連接;在該第三導電線路層和該第四導電線路層上分別形成一第一防焊層以及一第二防焊層;以及至少自該第一防焊層和該第二防焊層中的一個開設一導熱孔,該導熱孔貫穿該第一防焊層和該第一介電層,或者該第二防焊層和該第二介電層,從而暴露該導熱基材,然後在每一導熱孔中填充導熱材料,從而形成與該導熱基材導熱性連接的至少一導熱部,從而得到所述電路板。The invention provides a method for manufacturing a circuit board, which includes: providing a circuit substrate. The circuit substrate includes a first single panel, a thermally conductive substrate, and a second single panel that are sequentially laminated. A cavity penetrates the first single panel. Panel, the first single panel includes a first copper foil disposed away from the thermally conductive substrate, and the second single panel includes a second copper foil disposed away from the thermally conductive substrate; the first copper foil and the second A first electroplated copper layer is formed by electroplating on the copper foil; the first electroplated copper layer and the first copper foil and the second copper foil located between the first electroplated copper layers are etched to obtain a first conductive circuit. Layer and a second conductive circuit layer; an electronic component is placed in the cavity, and a first dielectric layer and a second dielectric are laminated on the first conductive circuit layer and the second conductive circuit layer, respectively An electrical layer; a third conductive circuit layer and a fourth conductive circuit layer are formed on the first dielectric layer and the second dielectric layer, respectively, the third conductive circuit layer and the first conductive circuit layer and the electrons The device is electrically connected, and the fourth conductive circuit layer is in contact with the first conductive line layer. The conductive circuit layer is electrically connected; a first solder mask layer and a second solder mask layer are formed on the third conductive circuit layer and the fourth conductive circuit layer, respectively; and at least from the first solder mask layer and the first solder mask layer One of the two solder mask layers is provided with a thermally conductive hole penetrating the first solder mask layer and the first dielectric layer, or the second solder mask layer and the second dielectric layer, thereby exposing the thermally conductive substrate. Material, and then each thermally conductive hole is filled with a thermally conductive material to form at least one thermally conductive portion thermally connected to the thermally conductive substrate, thereby obtaining the circuit board.
本發明還提供一種電路板,包括依次疊設的一第一基板、一導熱基材以及一第二基板,該第一基板上形成有貫穿的一空腔,該空腔中設有一電子元件,該第一基板和該第二基板上分別形成有一第一導電線路層和一第二導電線路層,該第一導電線路層和該第二導電線路層上分別覆蓋有一第一介電層和一第二介電層,所述第一介電層以及第二介電層上分別形成有一第三導電線路層和一第四導電線路層,該第三導電線路層與該第一導電線路層以及該電子元件電性連接,該第四導電線路層與該第二導電線路層電性連接,該第三導電線路層和該第四導電線路層上分別形成有一第一防焊層以及一第二防焊層,至少自該第一防焊層和該第二防焊層中的一個開設有一導熱孔,該導熱孔貫穿該第一防焊層和該第一介電層,或者貫穿該第二防焊層和該第二介電層,從而暴露該導熱基材,該導熱孔中填充有導熱材料,從而形成至少一導熱部。The present invention also provides a circuit board including a first substrate, a thermally conductive substrate, and a second substrate that are sequentially stacked. The first substrate is formed with a cavity therethrough, and an electronic component is disposed in the cavity. A first conductive circuit layer and a second conductive circuit layer are formed on the first substrate and the second substrate, respectively. The first conductive circuit layer and the second conductive circuit layer are covered with a first dielectric layer and a first conductive layer, respectively. Two dielectric layers, a third conductive circuit layer and a fourth conductive circuit layer are formed on the first dielectric layer and the second dielectric layer, respectively, the third conductive circuit layer and the first conductive circuit layer and the The electronic components are electrically connected, the fourth conductive circuit layer is electrically connected to the second conductive circuit layer, and a first solder resist layer and a second solder resist layer are formed on the third conductive circuit layer and the fourth conductive circuit layer, respectively. A soldering layer is provided with at least one of the first solder resist layer and the second solder resist layer having a thermal conductive hole penetrating through the first solder resist layer and the first dielectric layer or through the second solder resist layer. Solder layer and the second dielectric layer, thereby Expose the thermally conductive substrate, the thermal via filled with a thermally conductive material, to form at least a thermally conductive portion.
在以上電路板中,該電子元件產生的熱量可藉由該導熱基材和該導熱部散發至外部環境中,由於所述熱量達到該導熱基材時能夠得到緩衝,從而避免核心層熱膨脹。In the above circuit board, the heat generated by the electronic component can be dissipated to the external environment through the thermally conductive substrate and the thermally conductive portion. Since the heat can be buffered when it reaches the thermally conductive substrate, thermal expansion of the core layer can be avoided.
請參閱圖1至圖14,本發明一第一實施方式提供一種電路板100的製作方法,包括以下步驟:Referring to FIGS. 1 to 14, a first embodiment of the present invention provides a method for manufacturing a circuit board 100, including the following steps:
步驟一,請參閱圖1,提供一第一單面板11、一第二單面板12以及一導熱基材13。該第一單面板11包括一第一基板110以及結合於該第一基板110上的一第一銅箔111,一空腔112貫穿該第一基板110以及該第一銅箔111。該第二單面板12包括一第二基板120以及結合於該第二基板120上的一第二銅箔121。該第一銅箔111以及該第二銅箔121的厚度均為d1。Step one, referring to FIG. 1, a first single panel 11, a second single panel 12 and a thermally conductive substrate 13 are provided. The first single panel 11 includes a first substrate 110 and a first copper foil 111 coupled to the first substrate 110. A cavity 112 penetrates the first substrate 110 and the first copper foil 111. The second single panel 12 includes a second substrate 120 and a second copper foil 121 bonded to the second substrate 120. The thickness of the first copper foil 111 and the second copper foil 121 are both d1.
在本實施方式中,該導熱基材13的材質為具有良好電絕緣性的導熱樹脂組合物,更具體的,該導熱基材13的材質可選自納米碳材料填充的導熱樹脂組合物、環氧樹脂系導熱樹脂組合物、聚碳酸酯系導熱樹脂組合物、丙烯酸系導熱樹脂組合物等中的至少一種。所述導熱樹脂組合物的導熱係數為K1。In this embodiment, the material of the thermally conductive substrate 13 is a thermally conductive resin composition having good electrical insulation properties. More specifically, the material of the thermally conductive substrate 13 may be selected from a thermally conductive resin composition filled with a nano-carbon material and a ring. At least one of an oxyresin-based thermally conductive resin composition, a polycarbonate-based thermally-conductive resin composition, an acrylic thermally-conductive resin composition, and the like. The thermal conductivity of the thermally conductive resin composition is K1.
步驟二,請參閱圖2,在該導熱基材13相對的兩表面分別壓合該第一單面板11和該第二單面板12,使該第一銅箔111與該第二銅箔121分別遠離該導熱基材13設置,從而形成一電路基板20。Step two, referring to FIG. 2, the first single-sided panel 11 and the second single-sided panel 12 are respectively pressed on two opposite surfaces of the thermally conductive substrate 13 so that the first copper foil 111 and the second copper foil 121 are respectively pressed. The circuit board 20 is formed away from the thermally conductive substrate 13.
步驟三,請參閱圖3,在該電路基板20除該空腔112之外的區域開設至少一貫穿該第一單面板11、該第二單面板12以及該導熱基材13的開孔21,並在每一所述開孔21的內壁以及該空腔112的內壁形成一第一導電晶種層22。Step three, referring to FIG. 3, at least one opening 21 penetrating through the first single panel 11, the second single panel 12 and the thermally conductive substrate 13 is opened in an area of the circuit substrate 20 except the cavity 112. A first conductive seed layer 22 is formed on the inner wall of each of the openings 21 and the inner wall of the cavity 112.
在本實施方式中,可藉由鐳射鑽孔的方式形成所述開孔21。在本實施方式中,可藉由化學鍍或濺鍍的方式形成所述第一導電晶種層22。In this embodiment, the opening 21 can be formed by laser drilling. In this embodiment, the first conductive seed layer 22 can be formed by chemical plating or sputtering.
步驟四,請參閱圖4,分別在該第一銅箔111以及該第二銅箔121上覆蓋一圖形光阻層30,所述圖形光阻層30所界定的開口(圖未標)用於暴露該第一銅箔111以及該第二銅箔121的部分區域、形成有所述第一導電晶種層22的所述開孔21、以及形成有所述第一導電晶種層22的該空腔112。Step four, please refer to FIG. 4, a patterned photoresist layer 30 is covered on the first copper foil 111 and the second copper foil 121, respectively. The openings (not shown) defined by the patterned photoresist layer 30 are used for A portion of the first copper foil 111 and the second copper foil 121 is exposed, the openings 21 where the first conductive seed layer 22 is formed, and the first conductive seed layer 22 where the first conductive seed layer 22 is formed. Cavity 112.
在本實施例中,所述圖形光阻層30為採用曝光顯影制程以形成所需的圖案。更具體的,所述圖形光阻層30為幹膜。In this embodiment, the patterned photoresist layer 30 is formed by an exposure and development process to form a desired pattern. More specifically, the patterned photoresist layer 30 is a dry film.
步驟五,請參閱圖5,在該第一銅箔111以及該第二銅箔121所暴露的區域電鍍銅,從而在該第一銅箔111以及該第二銅箔121上電鍍以分別形成一第一電鍍銅層40。部分所述第一電鍍銅層40填充於形成有所述第一導電晶種層22的所述開孔21中以形成用於電性連接兩個第一電鍍銅層40的第一導電孔23,部分所述第一電鍍銅層40還進一步形成於該空腔112中。Step five, referring to FIG. 5, copper is electroplated on the exposed areas of the first copper foil 111 and the second copper foil 121, so as to form electroplating on the first copper foil 111 and the second copper foil 121, respectively. First electroplated copper layer 40. Part of the first electroplated copper layer 40 is filled in the openings 21 where the first conductive seed layer 22 is formed to form first conductive holes 23 for electrically connecting the two first electroplated copper layers 40. A part of the first electroplated copper layer 40 is further formed in the cavity 112.
其中,所述第一電鍍銅層40的厚度為d2,且d2≥d1。Wherein, the thickness of the first electroplated copper layer 40 is d2, and d2 ≧ d1.
步驟六,請參閱圖6,移除所述圖形光阻層30,採用曝光顯影技術蝕刻所述第一電鍍銅層40以及位於所述第一電鍍銅層40之間的該第一銅箔111以及該第二銅箔121以得到一第一導電線路層51和一第二導電線路層52。Step 6: Referring to FIG. 6, the patterned photoresist layer 30 is removed, and the first electroplated copper layer 40 and the first copper foil 111 located between the first electroplated copper layer 40 are etched using an exposure and development technique. And the second copper foil 121 to obtain a first conductive circuit layer 51 and a second conductive circuit layer 52.
其中,該第一導電線路層51和該第二導電線路層52的厚度均為d2。蝕刻後位於該空腔112中的該第一電鍍銅層40的厚度為d2-d1。The thicknesses of the first conductive circuit layer 51 and the second conductive circuit layer 52 are both d2. The thickness of the first electroplated copper layer 40 in the cavity 112 after the etching is d2-d1.
步驟七,請參閱圖7,在位於該空腔112中的該第一電鍍銅層40上置入一電子元件63,該電子元件63具有遠離位於該空腔112中的該第一電鍍銅層40的兩個接觸墊630。然後,在該第一導電線路層51和該第二導電線路層52上分別壓合一第一介電層61和一第二介電層62,並使該第一介電層61流動並填充該第一導電線路層51以及該電子元件63之間的空隙,以及使該第二介電層62流動並填充該第二導電線路層52之間的空隙。該電子元件63可以是電阻或電容等。Step 7. Referring to FIG. 7, an electronic component 63 is placed on the first electroplated copper layer 40 located in the cavity 112, and the electronic component 63 has a distance from the first electroplated copper layer located in the cavity 112. 40 of two contact pads 630. Then, a first dielectric layer 61 and a second dielectric layer 62 are laminated on the first conductive circuit layer 51 and the second conductive circuit layer 52, respectively, and the first dielectric layer 61 is flowed and filled. The space between the first conductive circuit layer 51 and the electronic component 63, and the second dielectric layer 62 is caused to flow and fill the space between the second conductive circuit layer 52. The electronic component 63 may be a resistor or a capacitor.
在本實施方式中,該第一介電層61以及該第二介電層62的材質為樹脂,所述樹脂可選自聚丙烯、環氧樹脂、聚氨酯、酚醛樹脂、脲醛樹脂、三聚氰胺-甲醛樹脂、不飽和樹脂、聚醯亞胺等中的至少一種。In this embodiment, a material of the first dielectric layer 61 and the second dielectric layer 62 is resin, and the resin may be selected from polypropylene, epoxy resin, polyurethane, phenol resin, urea resin, and melamine-formaldehyde. At least one of a resin, an unsaturated resin, and polyimide.
步驟八,請參閱圖8,在該第一介電層61中開設通孔610以暴露該第一導電線路層51以及該電子元件63的接觸墊630,以及在該第二介電層62中開設通孔620以暴露該第二導電線路層52。Step eight, referring to FIG. 8, a through hole 610 is opened in the first dielectric layer 61 to expose the first conductive circuit layer 51 and the contact pad 630 of the electronic component 63, and in the second dielectric layer 62 A through hole 620 is opened to expose the second conductive circuit layer 52.
步驟九,請參閱圖9,在每一所述通孔610、620的內壁上形成第二導電晶種層64,再在所述第一介電層61以及第二介電層62上電鍍銅,從而在所述第一介電層61以及第二介電層62上分別形成一第二電鍍銅層65,部分所述第二電鍍銅層65填充於形成有所述第二導電晶種層64的每一所述通孔610、620中以形成第二導電孔66。Step Nine, referring to FIG. 9, a second conductive seed layer 64 is formed on an inner wall of each of the through holes 610 and 620, and then electroplated on the first dielectric layer 61 and the second dielectric layer 62. Copper, so that a second electroplated copper layer 65 is formed on the first dielectric layer 61 and the second dielectric layer 62 respectively, and a part of the second electroplated copper layer 65 is filled with the second conductive seed Each of the through holes 610, 620 of the layer 64 forms a second conductive hole 66.
步驟十,請參閱圖10,採用曝光顯影技術在該第二電鍍銅層65中蝕刻出所需的導電線路,從而在所述第一介電層61以及第二介電層62上分別形成一第三導電線路層71和一第四導電線路層72。其中,該第三導電線路層71藉由所述第二導電孔66與該第一導電線路層51以及該電子元件63的接觸墊630電性連接。該第四導電線路層72藉由所述第二導電孔66與該第二導電線路層52電性連接。Step 10, referring to FIG. 10, a desired conductive circuit is etched in the second electroplated copper layer 65 by using an exposure and development technology, so that a first dielectric layer 61 and a second dielectric layer 62 are formed respectively. The third conductive circuit layer 71 and a fourth conductive circuit layer 72. The third conductive circuit layer 71 is electrically connected to the first conductive circuit layer 51 and the contact pad 630 of the electronic component 63 through the second conductive hole 66. The fourth conductive circuit layer 72 is electrically connected to the second conductive circuit layer 52 through the second conductive hole 66.
在本實施方式中,可藉由鐳射鑽孔的方式形成所述通孔610、620。In this embodiment, the through holes 610 and 620 may be formed by laser drilling.
步驟十一,請參閱圖11,在該第三導電線路層71和該第四導電線路層72上分別形成一第一防焊層81以及一第二防焊層82。Step eleven, referring to FIG. 11, a first solder resist layer 81 and a second solder resist layer 82 are respectively formed on the third conductive circuit layer 71 and the fourth conductive circuit layer 72.
在本實施方式中,該第一防焊層81和該第二防焊層82為油墨層或幹膜。In this embodiment, the first solder resist layer 81 and the second solder resist layer 82 are ink layers or dry films.
步驟十二,請參閱圖12和圖13,至少自該第一防焊層81和該第二防焊層82中的一個開設一導熱孔91,該導熱孔91貫穿該第一防焊層81、該第一介電層61以及該第一基板110,或者貫穿該第二防焊層82、該第二介電層62以及該第二基板120,從而暴露該導熱基材13。然後,在每一導熱孔91中填充導熱材料,從而形成與該導熱基材13導熱性連接的至少一導熱部90。Step twelve, referring to FIGS. 12 and 13, a heat conducting hole 91 is opened from at least one of the first solder resist layer 81 and the second solder resist layer 82, and the heat conducting hole 91 penetrates the first solder resist layer 81. , The first dielectric layer 61 and the first substrate 110, or penetrate the second solder resist layer 82, the second dielectric layer 62, and the second substrate 120, thereby exposing the thermally conductive substrate 13. Then, each thermally conductive hole 91 is filled with a thermally conductive material to form at least one thermally conductive portion 90 thermally connected to the thermally conductive substrate 13.
在本實施方式中,自該第一防焊層81開設兩個導熱孔91(即導熱孔91位於同側,如圖10所示)。其中,該導熱部90中填充的導熱材料與該導熱基材的材質類似,其導熱係數為K2,且K2≥K1。In this embodiment, two heat conducting holes 91 are opened from the first solder resist layer 81 (that is, the heat conducting holes 91 are located on the same side, as shown in FIG. 10). The thermally conductive material filled in the thermally conductive portion 90 is similar to the material of the thermally conductive substrate, and has a thermal conductivity of K2, and K2 ≧ K1.
在另一實施方式中,分別自該第一防焊層81和該第二防焊層82開設一個導熱孔91(即導熱孔91位於不同側,如圖11所示),且自該第一防焊層81起開設的導熱孔91和自該第二防焊層82起開設的導熱孔91交錯設置。In another embodiment, a heat conducting hole 91 is opened from the first solder resist layer 81 and the second solder resist layer 82 (that is, the heat conducting holes 91 are located on different sides, as shown in FIG. 11), and The thermal conductive holes 91 opened from the solder resist layer 81 and the thermal conductive holes 91 opened from the second solder resist layer 82 are staggered.
其中,該電子元件63在該導熱基材13上的投影面積為A1,所述兩個導熱部90與該導熱基材13的接觸面積為A2,A2≥A1。The projected area of the electronic component 63 on the thermally conductive substrate 13 is A1, and the contact area of the two thermally conductive portions 90 and the thermally conductive substrate 13 is A2, and A2 ≧ A1.
步驟十三,請參閱圖14,在每一導熱部90遠離該導熱基材13的端部覆蓋一散熱片92,使所述散熱片92與該導熱基材13藉由所述導熱部90導熱性連接,從而得到所述電路板100。其中,當自該第一防焊層81開設導熱孔91時,可藉由單一的散熱片92覆蓋每一導熱孔91的端部。Step thirteen, please refer to FIG. 14, an end portion of each thermally conductive portion 90 away from the thermally conductive substrate 13 is covered with a heat sink 92, so that the heat sink 92 and the thermally conductive substrate 13 conduct heat through the thermally conductive portion 90. Sexually connected to obtain the circuit board 100. Wherein, when heat conducting holes 91 are opened from the first solder resist layer 81, the ends of each heat conducting hole 91 may be covered by a single heat sink 92.
在本實施方式中,該散熱片92的導熱係數為K3,且K3≥K2。該散熱片92的材質為金屬,更具體的,該散熱片92的材質可選自金、銀、銅、鉛、鎳以及錫等中的至少一種。In this embodiment, the thermal conductivity of the heat sink 92 is K3, and K3 ≧ K2. The material of the heat sink 92 is metal. More specifically, the material of the heat sink 92 may be selected from at least one of gold, silver, copper, lead, nickel, and tin.
請參閱圖14,本發明第一實施方式還提供一種電路板100,該電路板100包括依次疊設的一第一基板110、一導熱基材13以及一第二基板120。該第一基板110上形成有貫穿的一空腔112。至少一第一導電孔23貫穿該第一基板110、該第二基板120以及該導熱基材13。每一所述導電孔23的內壁以及該空腔112的內壁包括一第一導電晶種層22。Referring to FIG. 14, a first embodiment of the present invention further provides a circuit board 100. The circuit board 100 includes a first substrate 110, a thermally conductive substrate 13, and a second substrate 120 stacked in this order. A cavity 112 is formed in the first substrate 110. At least one first conductive hole 23 penetrates the first substrate 110, the second substrate 120, and the thermally conductive substrate 13. The inner wall of each of the conductive holes 23 and the inner wall of the cavity 112 includes a first conductive seed layer 22.
該第一基板110和該第二基板120上分別形成有一第一導電線路層51和一第二導電線路層52。該第一導電線路層51和該第二導電線路層52藉由所述第一導電孔23電性連接。該第一導電線路層51包括形成於該第一基板110上的一第一銅箔111以及形成於該第一銅箔111上的一第一電鍍銅層40,該第一電鍍銅層40進一步形成於該空腔112的所述第一導電晶種層22上。該第二導電線路層52包括形成於該第二基板120上的一第二銅箔121以及形成於該第二銅箔121上的一第一電鍍銅層40。其中,該第一導電線路層51和該第二導電線路層52的厚度均為d2。位於該空腔112中的該第一電鍍銅層40的厚度為d2-d1。A first conductive circuit layer 51 and a second conductive circuit layer 52 are formed on the first substrate 110 and the second substrate 120, respectively. The first conductive circuit layer 51 and the second conductive circuit layer 52 are electrically connected through the first conductive hole 23. The first conductive circuit layer 51 includes a first copper foil 111 formed on the first substrate 110 and a first copper plated copper layer 40 formed on the first copper foil 111. The first copper plated copper layer 40 is further The first conductive seed layer 22 is formed on the cavity 112. The second conductive circuit layer 52 includes a second copper foil 121 formed on the second substrate 120 and a first electroplated copper layer 40 formed on the second copper foil 121. The thicknesses of the first conductive circuit layer 51 and the second conductive circuit layer 52 are both d2. The thickness of the first electroplated copper layer 40 in the cavity 112 is d2-d1.
位於該空腔112中的該第一電鍍銅層40上設有一電子元件63,該電子元件63具有遠離位於該空腔112中的該第一電鍍銅層40的兩個接觸墊630。An electronic component 63 is disposed on the first electroplated copper layer 40 in the cavity 112, and the electronic component 63 has two contact pads 630 away from the first electroplated copper layer 40 in the cavity 112.
該第一導電線路層51和該第二導電線路層52上分別覆蓋有一第一介電層61和一第二介電層62,該第一介電層61填充該第一導電線路層51以及該電子元件63之間的空隙,該第二介電層62填充該第二導電線路層52之間的空隙。The first conductive circuit layer 51 and the second conductive circuit layer 52 are covered with a first dielectric layer 61 and a second dielectric layer 62, respectively. The first dielectric layer 61 fills the first conductive circuit layer 51 and The gap between the electronic components 63 and the second dielectric layer 62 fill the gap between the second conductive circuit layers 52.
該第一介電層61中開設有用於暴露該第一導電線路層51以及該電子元件63的接觸墊630的第二導電孔66。該第二介電層62中開設有用於暴露該第二導電線路層52的第二導電孔66。每一所述第二導電孔66的內壁包括一第二導電晶種層630。The first dielectric layer 61 defines a second conductive hole 66 for exposing the first conductive circuit layer 51 and the contact pad 630 of the electronic component 63. A second conductive hole 66 is defined in the second dielectric layer 62 to expose the second conductive circuit layer 52. An inner wall of each of the second conductive holes 66 includes a second conductive seed layer 630.
所述第一介電層61以及第二介電層62上分別形成有一第三導電線路層71和一第四導電線路層72。該第三導電線路層71藉由所述第二導電孔66與該第一導電線路層51以及該電子元件63的接觸墊630電性連接。該第四導電線路層72藉由所述第二導電孔66與該第二導電線路層52電性連接。A third conductive circuit layer 71 and a fourth conductive circuit layer 72 are formed on the first dielectric layer 61 and the second dielectric layer 62, respectively. The third conductive circuit layer 71 is electrically connected to the first conductive circuit layer 51 and the contact pad 630 of the electronic component 63 through the second conductive hole 66. The fourth conductive circuit layer 72 is electrically connected to the second conductive circuit layer 52 through the second conductive hole 66.
該第三導電線路層71和該第四導電線路層72上分別形成有一第一防焊層81以及一第二防焊層82。至少自該第一防焊層81和該第二防焊層82中的一個開設有一導熱孔91,該導熱孔91貫穿該第一防焊層81、該第一介電層61以及該第一基板110,或者貫穿該第二防焊層82、該第二介電層62以及該第二基板120,從而暴露該導熱基材13,該導熱孔91內填充有導熱材料,從而形成至少一導熱部90。A first solder resist layer 81 and a second solder resist layer 82 are formed on the third conductive circuit layer 71 and the fourth conductive circuit layer 72, respectively. A heat conducting hole 91 is opened at least from one of the first solder resist layer 81 and the second solder resist layer 82, and the heat conducting hole 91 penetrates the first solder resist layer 81, the first dielectric layer 61 and the first The substrate 110 or the second solder resist layer 82, the second dielectric layer 62, and the second substrate 120 are exposed to expose the thermally conductive substrate 13, and the thermally conductive hole 91 is filled with a thermally conductive material to form at least one thermally conductive material.部 90。 90.
每一導熱部90遠離該導熱基材13的端部覆蓋有一散熱片92,所述散熱片92與該導熱基材13藉由所述導熱部90導熱性連接。An end of each heat conducting portion 90 remote from the heat conducting substrate 13 is covered with a heat sink 92, and the heat sink 92 is thermally connected to the heat conducting substrate 13 through the heat conducting portion 90.
本發明一第二實施方式提供一種電路板100’的製作方法,與上述第一實施方式中的電路板100的製作方法不同的是,該空腔112內並未形成有第一導電晶種層22和該第一電鍍銅層40,具體的,在步驟三中:請參閱圖15,在該電路基板20除該空腔112之外的區域開設至少一貫穿該一單面板11、該第二單面板12以及該導熱基材13的開孔21後,在該空腔112上覆蓋一光阻113,並在每一所述開孔21的內壁形成一第一導電晶種層22。該光阻113可用於阻止電鍍銅過程中銅在該空腔112的內壁沉積。A second embodiment of the present invention provides a method for manufacturing a circuit board 100 ′, which is different from the method for manufacturing the circuit board 100 in the first embodiment described above. The first conductive seed layer is not formed in the cavity 112. 22 and the first electroplated copper layer 40, specifically, in step three: referring to FIG. 15, at least one of the circuit substrate 20 except the cavity 112 is opened through the single panel 11 and the second After the single panel 12 and the opening 21 of the thermally conductive substrate 13, a photoresist 113 is covered on the cavity 112, and a first conductive seed layer 22 is formed on the inner wall of each of the openings 21. The photoresist 113 can be used to prevent copper from being deposited on the inner wall of the cavity 112 during copper electroplating.
請參閱圖16,本發明第二實施方式還提供一種電路板100’,與上述電路板100不同的是,該空腔112內並未形成有第一導電晶種層22和該第一電鍍銅層40,即該電子元件63直接接觸該空腔112的底部。Referring to FIG. 16, a second embodiment of the present invention further provides a circuit board 100 ′. Unlike the above-mentioned circuit board 100, the first conductive seed layer 22 and the first electroplated copper are not formed in the cavity 112. The layer 40, that is, the electronic component 63 directly contacts the bottom of the cavity 112.
由於該電子元件63內埋於該空腔112,故,可降低整個產品的厚度。該電子元件63產生的熱量可依序藉由該導熱基材13、該導熱部90以及該散熱片92散發至外部環境中。由於所述熱量達到該導熱基材13時能夠得到緩衝,從而避免核心層熱膨脹。Since the electronic component 63 is buried in the cavity 112, the thickness of the entire product can be reduced. The heat generated by the electronic component 63 can be dissipated to the external environment through the thermally conductive substrate 13, the thermally conductive portion 90 and the heat sink 92 in order. Since the heat can be buffered when the heat reaches the thermally conductive substrate 13, thermal expansion of the core layer can be avoided.
最後需要指出,以上實施例僅用以說明本發明的技術方案而非限制,儘管參照以上較佳實施例對本發明進行了詳細說明,本領域的普通技術人員應當理解,可以對本發明的技術方案進行修改或等同替換都不應脫離本發明技術方案的精神和範圍。Finally, it should be pointed out that the above embodiments are only used to illustrate the technical solution of the present invention and are not limiting. Although the present invention has been described in detail with reference to the above preferred embodiments, those skilled in the art should understand that the technical solution of the present invention Modifications or equivalent replacements should not depart from the spirit and scope of the technical solution of the present invention.
11‧‧‧第一單面板 11‧‧‧The first single panel
12‧‧‧第二單面板 12‧‧‧Second single panel
13‧‧‧導熱基材 13‧‧‧ Thermally conductive substrate
20‧‧‧電路基板 20‧‧‧circuit board
21‧‧‧開孔 21‧‧‧ opening
22‧‧‧第一導電晶種層 22‧‧‧ the first conductive seed layer
23‧‧‧第一導電孔 23‧‧‧first conductive hole
30‧‧‧圖形光阻層 30‧‧‧graphic photoresist layer
40‧‧‧第一電鍍銅層 40‧‧‧The first copper plating
51‧‧‧第一導電線路層 51‧‧‧The first conductive circuit layer
52‧‧‧第二導電線路層 52‧‧‧Second conductive circuit layer
61‧‧‧第一介電層 61‧‧‧First dielectric layer
62‧‧‧第二介電層 62‧‧‧Second dielectric layer
63‧‧‧電子元件 63‧‧‧Electronic components
64‧‧‧第二導電晶種層 64‧‧‧Second conductive seed layer
65‧‧‧第二電鍍銅層 65‧‧‧Second electroplated copper layer
66‧‧‧第二導電孔 66‧‧‧Second conductive hole
71‧‧‧第三導電線路層 71‧‧‧ the third conductive circuit layer
72‧‧‧第四導電線路層 72‧‧‧ Fourth conductive circuit layer
81‧‧‧第一防焊層 81‧‧‧First solder resist
82‧‧‧第二防焊層 82‧‧‧Second solder mask
90‧‧‧導熱部 90‧‧‧Heat conduction department
91‧‧‧導熱孔 91‧‧‧Heat conduction hole
92‧‧‧散熱片 92‧‧‧ heat sink
100,100’‧‧‧電路板 100, 100’‧‧‧ circuit board
110‧‧‧第一基板 110‧‧‧first substrate
111‧‧‧第一銅箔 111‧‧‧The first copper foil
112‧‧‧空腔 112‧‧‧ Cavity
120‧‧‧第二基板 120‧‧‧second substrate
121‧‧‧第二銅箔 121‧‧‧Second copper foil
610,620‧‧‧通孔 610,620‧‧‧through hole
630‧‧‧接觸墊 630‧‧‧contact pad
圖1為本發明一較佳實施例的電路板的製作方法所使用的第一單面板、第二單面板以及導熱基材的結構示意圖。FIG. 1 is a schematic structural diagram of a first single panel, a second single panel, and a thermally conductive substrate used in a method for manufacturing a circuit board according to a preferred embodiment of the present invention.
圖2為壓合圖1所示的第一單面板、第二單面板以及導熱基材後得到的電路基板的結構示意圖。FIG. 2 is a schematic structural diagram of a circuit substrate obtained by laminating the first single panel, the second single panel, and a thermally conductive substrate shown in FIG. 1.
圖3為在圖2所示的電路基板中開設開孔並形成第一導電晶種層後的結構示意圖。FIG. 3 is a schematic diagram of a structure after openings are formed in the circuit substrate shown in FIG. 2 and a first conductive seed layer is formed.
圖4為在圖3所示的電路基板兩側覆蓋圖形光阻層後的結構示意圖。FIG. 4 is a schematic structural diagram of a patterned photoresist layer covered on both sides of the circuit substrate shown in FIG. 3.
圖5為在圖4所示的圖形光阻層的開口中電鍍銅以形成第一電鍍銅層後的結構示意圖。FIG. 5 is a schematic structural diagram of electroplating copper in the opening of the patterned photoresist layer shown in FIG. 4 to form a first electroplated copper layer.
圖6為蝕刻圖5所示的第一電鍍銅層以得到第一導電線路層和第二導電線路層後的結構示意圖。FIG. 6 is a schematic structural diagram of etching the first electroplated copper layer shown in FIG. 5 to obtain a first conductive circuit layer and a second conductive circuit layer.
圖7為在圖6所示的第一單面板的空腔中置入電子元件並壓合第一介電層和第二介電層後的結構示意圖。FIG. 7 is a schematic structural diagram of an electronic component placed in the cavity of the first single panel shown in FIG. 6 and the first dielectric layer and the second dielectric layer are laminated.
圖8為在圖7所示的第一介電層和第二介電層中開設通孔後的結構示意圖。FIG. 8 is a schematic diagram of a structure after a through hole is opened in the first dielectric layer and the second dielectric layer shown in FIG. 7.
圖9為在圖8所示的通孔中形成第二導電晶種層並在第一介電層和第二介電層上電鍍銅以形成第二電鍍銅層後的結構示意圖。FIG. 9 is a schematic structural diagram of forming a second conductive seed layer in the through hole shown in FIG. 8 and electroplating copper on the first dielectric layer and the second dielectric layer to form a second electroplated copper layer.
圖10為蝕刻圖9所示的第二電鍍銅層以得到第三導電線路層和第四導電線路層後的結構示意圖。FIG. 10 is a schematic structural view of the second electroplated copper layer shown in FIG. 9 to obtain a third conductive circuit layer and a fourth conductive circuit layer.
圖11為在圖10所示的第三導電線路層和第四導電線路層上形成第一防焊層以及第二防焊層後的結構示意圖。FIG. 11 is a schematic structural diagram of a first solder resist layer and a second solder resist layer formed on the third conductive circuit layer and the fourth conductive circuit layer shown in FIG. 10.
圖12為自圖11所示的第一防焊層開設導熱孔並填充導熱材料以形成導熱部後的結構示意圖。FIG. 12 is a schematic structural diagram of a thermal conductive hole opened from the first solder resist layer shown in FIG. 11 and filled with a thermal conductive material to form a thermal conductive portion.
圖13為分別自圖11所示的第一防焊層以及第二防焊層起開設導熱孔並填充導熱材料以形成導熱部後的結構示意圖。FIG. 13 is a schematic structural diagram of a thermal conductive hole opened from a first solder resist layer and a second solder resist layer shown in FIG. 11 and filled with a thermally conductive material to form a thermally conductive portion.
圖14為在圖12所示的導熱部的端部覆蓋散熱片後得到的電路板的結構示意圖。FIG. 14 is a schematic structural diagram of a circuit board obtained by covering an end portion of a heat conducting portion shown in FIG. 12 with a heat sink.
圖15示出在另一較佳實施方式中在圖2所示的電路基板中開設開孔並形成第一導電晶種層,並在第一單面板的空腔上覆蓋光阻後的結構示意圖。FIG. 15 is a schematic structural view of another embodiment in which an opening is formed in the circuit substrate shown in FIG. 2 and a first conductive seed layer is formed, and a cavity of the first single-panel is covered with a photoresist. .
圖16為在圖15所示的電路基板上得到的另一電路板的結構示意圖。FIG. 16 is a schematic structural diagram of another circuit board obtained on the circuit substrate shown in FIG. 15.
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Also Published As
Publication number | Publication date |
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CN109413836B (en) | 2021-04-20 |
CN109413836A (en) | 2019-03-01 |
TWI658761B (en) | 2019-05-01 |
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