TW201900764A - Resin composition layer - Google Patents
Resin composition layer Download PDFInfo
- Publication number
- TW201900764A TW201900764A TW107113146A TW107113146A TW201900764A TW 201900764 A TW201900764 A TW 201900764A TW 107113146 A TW107113146 A TW 107113146A TW 107113146 A TW107113146 A TW 107113146A TW 201900764 A TW201900764 A TW 201900764A
- Authority
- TW
- Taiwan
- Prior art keywords
- resin composition
- resin
- layer
- hole
- insulating layer
- Prior art date
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- 239000011342 resin composition Substances 0.000 title claims abstract description 203
- 239000003822 epoxy resin Substances 0.000 claims abstract description 138
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 138
- 239000011256 inorganic filler Substances 0.000 claims abstract description 53
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 53
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 37
- 125000003118 aryl group Chemical group 0.000 claims abstract description 28
- 239000002245 particle Substances 0.000 claims abstract description 28
- 229920006272 aromatic hydrocarbon resin Polymers 0.000 claims abstract description 23
- 125000002950 monocyclic group Chemical group 0.000 claims abstract 3
- 239000010410 layer Substances 0.000 claims description 449
- 125000001475 halogen functional group Chemical group 0.000 claims description 124
- 239000004020 conductor Substances 0.000 claims description 90
- 229920005989 resin Polymers 0.000 claims description 87
- 239000011347 resin Substances 0.000 claims description 87
- 239000004065 semiconductor Substances 0.000 claims description 19
- 150000002430 hydrocarbons Chemical group 0.000 claims description 13
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 5
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 56
- -1 phenol phenolic aldehyde Chemical class 0.000 description 55
- 239000003795 chemical substances by application Substances 0.000 description 53
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 42
- 239000000126 substance Substances 0.000 description 38
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 37
- 239000000243 solution Substances 0.000 description 35
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- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 23
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- 239000004593 Epoxy Substances 0.000 description 18
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- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 14
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- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 6
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- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 6
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- 125000001624 naphthyl group Chemical group 0.000 description 6
- 230000003472 neutralizing effect Effects 0.000 description 6
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- 238000007747 plating Methods 0.000 description 6
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- 229910052725 zinc Inorganic materials 0.000 description 6
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- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 5
- ARNKHYQYAZLEEP-UHFFFAOYSA-N 1-naphthalen-1-yloxynaphthalene Chemical compound C1=CC=C2C(OC=3C4=CC=CC=C4C=CC=3)=CC=CC2=C1 ARNKHYQYAZLEEP-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
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- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
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- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 description 1
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- 125000000623 heterocyclic group Chemical group 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
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- GEMHFKXPOCTAIP-UHFFFAOYSA-N n,n-dimethyl-n'-phenylcarbamimidoyl chloride Chemical compound CN(C)C(Cl)=NC1=CC=CC=C1 GEMHFKXPOCTAIP-UHFFFAOYSA-N 0.000 description 1
- FZZQNEVOYIYFPF-UHFFFAOYSA-N naphthalene-1,6-diol Chemical compound OC1=CC=CC2=CC(O)=CC=C21 FZZQNEVOYIYFPF-UHFFFAOYSA-N 0.000 description 1
- MNZMMCVIXORAQL-UHFFFAOYSA-N naphthalene-2,6-diol Chemical compound C1=C(O)C=CC2=CC(O)=CC=C21 MNZMMCVIXORAQL-UHFFFAOYSA-N 0.000 description 1
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- 125000003518 norbornenyl group Chemical group C12(C=CC(CC1)C2)* 0.000 description 1
- JFOJYGMDZRCSPA-UHFFFAOYSA-J octadecanoate;tin(4+) Chemical compound [Sn+4].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O JFOJYGMDZRCSPA-UHFFFAOYSA-J 0.000 description 1
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- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- CUQCMXFWIMOWRP-UHFFFAOYSA-N phenyl biguanide Chemical compound NC(N)=NC(N)=NC1=CC=CC=C1 CUQCMXFWIMOWRP-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
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- 238000006068 polycondensation reaction Methods 0.000 description 1
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- 239000000843 powder Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 1
- 150000004060 quinone imines Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- WSFQLUVWDKCYSW-UHFFFAOYSA-M sodium;2-hydroxy-3-morpholin-4-ylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN1CCOCC1 WSFQLUVWDKCYSW-UHFFFAOYSA-M 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
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- 125000002298 terpene group Chemical group 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- GHPYAGKTTCKKDF-UHFFFAOYSA-M tetraphenylphosphanium;thiocyanate Chemical compound [S-]C#N.C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 GHPYAGKTTCKKDF-UHFFFAOYSA-M 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- CHJMFFKHPHCQIJ-UHFFFAOYSA-L zinc;octanoate Chemical compound [Zn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O CHJMFFKHPHCQIJ-UHFFFAOYSA-L 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Laminated Bodies (AREA)
- Structure Of Printed Boards (AREA)
- Confectionery (AREA)
- Materials For Medical Uses (AREA)
- Medical Preparation Storing Or Oral Administration Devices (AREA)
Abstract
Description
本發明係關於樹脂組成物層。進而,本發明係關於包含該樹脂組成物層之樹脂薄片;以及含有以樹脂組成物層的硬化物所形成之絕緣層之印刷配線板及半導體裝置。The present invention relates to a resin composition layer. Further, the present invention relates to a resin sheet including the resin composition layer; and a printed wiring board and a semiconductor device including the insulating layer formed of the cured product of the resin composition layer.
近年來,為了達成電子機器之小型化,發展印刷配線板之更加的薄型化。伴隨此,而發展內層基板之配線電路的微細化。例如,於專利文獻1中記載有包含支撐體及樹脂組成物層之可對應於微細配線的樹脂薄片(接著薄膜)。 [先前技術文獻] [專利文獻]In recent years, in order to achieve miniaturization of electronic equipment, development of printed wiring boards has become more thin. Along with this, the wiring circuit of the inner substrate is developed to be fine. For example, Patent Document 1 discloses a resin sheet (attached film) which can correspond to a fine wiring including a support and a resin composition layer. [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本特開2014-36051號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2014-36051
[發明所欲解決之課題][Problems to be solved by the invention]
本發明者為了達成更加的電子機器之小型化、薄型化,而對將樹脂薄片之樹脂組成物層減薄一事進行探討。探討的結果,本發明者發現在將薄的樹脂組成物層適用於絕緣層的情況時,在通孔之形成後會產生暈輪現象。在此,暈輪現象係指於通孔的周圍絕緣層之樹脂變色的現象。如此之暈輪現象,通常是因為通孔的周圍之樹脂劣化而產生。進而,得知若於已產生暈輪現象的絕緣層施行粗化處理,則已產生暈輪現象的絕緣層的部分(以下,有時稱為「暈輪部」)之樹脂在粗化處理時會被侵蝕,而在絕緣層與內層基板之間產生層間剝離。In order to achieve further miniaturization and thinning of an electronic device, the inventors of the present invention have discussed the thinning of the resin composition layer of the resin sheet. As a result of the investigation, the inventors have found that when a thin resin composition layer is applied to an insulating layer, a halo phenomenon occurs after the formation of the through hole. Here, the halo phenomenon refers to a phenomenon in which the resin of the surrounding insulating layer of the through hole is discolored. Such a halo phenomenon is usually caused by deterioration of the resin around the through hole. Further, it is found that when the insulating layer having the halo phenomenon is subjected to the roughening treatment, the resin of the portion of the insulating layer in which the halo phenomenon has occurred (hereinafter sometimes referred to as "the halo portion") is roughened. It will be eroded and interlayer peeling will occur between the insulating layer and the inner substrate.
進而,本發明者發現在將薄的樹脂組成物層適用於絕緣層的情況,通孔之形狀的控制會變得困難,而難以得到良好的形狀之通孔。在此,通孔之形狀為「良好」係指通孔之漸縮比接近1。又,通孔之漸縮比係指通孔之底徑相對於頂徑的比率。Further, the inventors have found that when a thin resin composition layer is applied to an insulating layer, it is difficult to control the shape of the through hole, and it is difficult to obtain a through hole having a good shape. Here, the shape of the through hole is "good" means that the taper ratio of the through hole is close to 1. Moreover, the taper ratio of the through holes refers to the ratio of the bottom diameter of the through holes to the top diameter.
上述之課題,皆因將樹脂組成物層之厚度減薄才開始產生者,其為以往所未知之新穎的課題。就提高印刷配線板之層間的導通可靠性之觀點而言,期望有此等課題之解決之道。All of the above problems have been caused by the thickness reduction of the resin composition layer, which is a novel problem that has not been known in the past. From the viewpoint of improving the conduction reliability between the layers of the printed wiring board, it is desirable to solve these problems.
本發明係鑑於前述之課題而發明者,其目的為提供可得到即使厚度為薄,亦可抑制暈輪現象,且可形成良好的形狀之通孔的絕緣層之樹脂組成物層;包含前述之樹脂組成物層之樹脂薄片;包含可抑制暈輪現象,並可形成良好的形狀之通孔的薄絕緣層之印刷配線板;以及包含前述之印刷配線板之半導體裝置。 [用以解決課題之手段]The present invention has been made in view of the above-described problems, and an object of the invention is to provide a resin composition layer which can provide an insulating layer which can suppress a halo phenomenon and can form a through hole having a good shape even if the thickness is thin; A resin sheet of a resin composition layer; a printed wiring board including a thin insulating layer capable of suppressing a halo phenomenon and capable of forming a through hole having a good shape; and a semiconductor device including the above printed wiring board. [Means to solve the problem]
本發明者為了解決前述之課題而努力探討的結果,發現藉由組合包含:(A)環氧樹脂、(B)含有作為具有2個以上羥基之單環或縮合環的芳香環之芳香族烴樹脂、以及(C)具有100nm以下之平均粒徑及15m2 /g以上之比表面積之至少一者之無機填充材的樹脂組成物,而可解決前述之課題,因而完成本發明。 亦即,本發明係包含下述之內容。In order to solve the above problems, the inventors of the present invention have found that aromatic hydrocarbons containing (A) an epoxy resin and (B) an aromatic ring containing a single ring or a condensed ring having two or more hydroxyl groups are combined. The resin and (C) a resin composition of an inorganic filler having at least one of an average particle diameter of 100 nm or less and a specific surface area of 15 m 2 /g or more can solve the above problems, and thus the present invention has been completed. That is, the present invention encompasses the following.
[1]一種樹脂組成物層,其係包含樹脂組成物之厚度15μm以下的樹脂組成物層, 樹脂組成物包含:(A)環氧樹脂、(B)含有作為具有2個以上羥基之單環或縮合環的芳香環之芳香族烴樹脂、以及(C)平均粒徑100nm以下之無機填充材。 [2]一種樹脂組成物層,其係包含樹脂組成物之厚度15μm以下的樹脂組成物層, 樹脂組成物包含:(A)環氧樹脂、(B)含有作為具有2個以上羥基之單環或縮合環的芳香環之芳香族烴樹脂、以及(C)比表面積15m2 /g以上之無機填充材。 [3]如[1]或[2]之樹脂組成物層,其中,(B)成分為以下述式(1)或式(2)所表示:(於式(1)中,R0 各自獨立表示2價之烴基,n1表示0~6之整數),(於式(2)中,R1 ~R4 各自獨立表示氫原子或1價之烴基)。 [4]如[1]~[3]中任一項之樹脂組成物層,其中,(B)成分為以下述式(3)或式(4)所表示:(於式(3)中,n2表示0~6之整數),(於式(4)中,R1 ~R4 各自獨立表示氫原子或1價之烴基)。 [5]如[1]~[4]中任一項之樹脂組成物層,其中,相對於樹脂組成物中之樹脂成分100質量%而言,(B)成分之量為5質量%~50質量%。 [6]如[1]~[5]中任一項之樹脂組成物層,其中,相對於樹脂組成物中之非揮發性成分100質量%而言,(C)成分之量為50質量%以上。 [7]如[1]~[6]中任一項之樹脂組成物層,其係用以形成導體層之絕緣層形成用。 [8]如[1]~[7]中任一項之樹脂組成物層,其係印刷配線板之層間絕緣層形成用。 [9]如[1]~[8]中任一項之樹脂組成物層,其係具有頂徑35μm以下之通孔的絕緣層形成用。 [10]一種樹脂薄片,其係包含支撐體,與 設置於支撐體上之如[1]~[9]中任一項之樹脂組成物層。 [11]一種印刷配線板,其係包含以如[1]~[9]中任一項之樹脂組成物層的硬化物所形成之絕緣層。 [12]一種印刷配線板,其係包含第1導體層、第2導體層、以及形成於第1導體層與第2導體層之間的絕緣層之印刷配線板, 絕緣層之厚度為15μm以下, 絕緣層具有頂徑35μm以下的通孔, 該通孔之漸縮比為80%以上, 該通孔之底部的邊緣起之暈輪距離為5μm以下, 相對於該通孔的底部半徑之暈輪比(halo ratio)為35%以下。 [13]如[12]之印刷配線板,其中,相對於該通孔的底部半徑之暈輪比為5%以上。 [14]一種半導體裝置,其係包含如[11]~[13]中任一項之印刷配線板。 [發明效果][1] A resin composition layer comprising a resin composition layer having a thickness of 15 μm or less of a resin composition, wherein the resin composition comprises (A) an epoxy resin and (B) a single ring having two or more hydroxyl groups. Or an aromatic hydrocarbon resin of an aromatic ring of a condensed ring, and (C) an inorganic filler having an average particle diameter of 100 nm or less. [2] A resin composition layer comprising a resin composition layer having a thickness of 15 μm or less of a resin composition, wherein the resin composition comprises (A) an epoxy resin and (B) a single ring having two or more hydroxyl groups. Or an aromatic hydrocarbon resin of an aromatic ring of a condensed ring, and (C) an inorganic filler having a specific surface area of 15 m 2 /g or more. [3] The resin composition layer according to [1] or [2], wherein the component (B) is represented by the following formula (1) or formula (2): (In the formula (1), R 0 each independently represents a divalent hydrocarbon group, and n1 represents an integer of 0 to 6), (In the formula (2), R 1 to R 4 each independently represent a hydrogen atom or a monovalent hydrocarbon group). [4] The resin composition layer according to any one of [1] to [3] wherein the component (B) is represented by the following formula (3) or (4): (in equation (3), n2 represents an integer from 0 to 6), (In the formula (4), R 1 to R 4 each independently represent a hydrogen atom or a monovalent hydrocarbon group). [5] The resin composition layer according to any one of [1] to [4], wherein the amount of the component (B) is 5% by mass to 50% by mass based on 100% by mass of the resin component in the resin composition. quality%. [6] The resin composition layer according to any one of [1] to [5], wherein the amount of the component (C) is 50% by mass based on 100% by mass of the nonvolatile component in the resin composition. the above. [7] The resin composition layer according to any one of [1] to [6], which is used for forming an insulating layer for forming a conductor layer. [8] The resin composition layer according to any one of [1] to [7] which is used for forming an interlayer insulating layer of a printed wiring board. [9] The resin composition layer according to any one of [1] to [8] which is formed by an insulating layer having a through hole having a top diameter of 35 μm or less. [10] A resin sheet comprising a support and a resin composition layer according to any one of [1] to [9] provided on the support. [11] A printed wiring board comprising an insulating layer formed of a cured product of the resin composition layer according to any one of [1] to [9]. [12] A printed wiring board comprising: a first conductor layer, a second conductor layer, and a printed wiring board formed of an insulating layer between the first conductor layer and the second conductor layer, wherein the insulating layer has a thickness of 15 μm or less The insulating layer has a through hole having a top diameter of 35 μm or less, and the through hole has a taper ratio of 80% or more, and the edge of the bottom of the through hole has a halo distance of 5 μm or less, and is opposite to the bottom radius of the through hole. The halo ratio is 35% or less. [13] The printed wiring board according to [12], wherein a halo ratio with respect to a bottom radius of the through hole is 5% or more. [14] A semiconductor device comprising the printed wiring board according to any one of [11] to [13]. [Effect of the invention]
依據本發明,可提供可得到即使厚度為薄,亦可抑制暈輪現象,且可形成良好的形狀之通孔的絕緣層之樹脂組成物層;包含前述之樹脂組成物層之樹脂薄片;包含可抑制暈輪現象,並可形成良好的形狀之通孔的薄絕緣層之印刷配線板;以及包含前述之印刷配線板之半導體裝置。According to the present invention, it is possible to provide a resin composition layer which can provide an insulating layer which can suppress a halo phenomenon and which can form a through hole of a good shape even if the thickness is thin, and a resin sheet including the resin composition layer described above; A printed wiring board capable of suppressing a halo phenomenon and forming a thin insulating layer of a good shape through hole; and a semiconductor device including the above printed wiring board.
以下,顯示實施形態及例示物,針對本發明來詳細地說明。但,本發明並不限定於以下所列舉之實施形態及例示物,可在不脫離本發明之要旨的範圍及其均等的範圍內任意地變更來實施。Hereinafter, embodiments and examples will be described, and the present invention will be described in detail. However, the present invention is not limited to the embodiments and the examples described below, and may be arbitrarily changed without departing from the scope of the invention.
於以下之說明中,樹脂組成物之「樹脂成分」係指樹脂組成物中所包含之非揮發性成分當中排除了無機填充材的成分。In the following description, the "resin component" of the resin composition means a component in which the inorganic filler is excluded from among the nonvolatile components contained in the resin composition.
[1.樹脂組成物層之概要] 本發明之樹脂組成物層為具有特定值以下之厚度之薄的樹脂組成物之層。又,本發明之樹脂組成物層所包含之樹脂組成物係包含: (A)環氧樹脂、 (B)含有作為具有2個以上羥基之單環或縮合環的芳香環之芳香族烴樹脂、以及 (C)具有100nm以下之平均粒徑及15m2 /g以上之比表面積之至少一者之無機填充材。 因而,於本發明之樹脂組成物層所包含之樹脂組成物中可包含下述之第一樹脂組成物及第二樹脂組成物之任一者。[1. Outline of Resin Composition Layer] The resin composition layer of the present invention is a layer of a thin resin composition having a thickness of a specific value or less. Further, the resin composition of the resin composition layer of the present invention comprises: (A) an epoxy resin; (B) an aromatic hydrocarbon resin containing an aromatic ring having a single ring or a condensed ring of two or more hydroxyl groups, And (C) an inorganic filler having at least one of an average particle diameter of 100 nm or less and a specific surface area of 15 m 2 /g or more. Therefore, the resin composition contained in the resin composition layer of the present invention may include any of the first resin composition and the second resin composition described below.
第一樹脂組成物係包含:(A)環氧樹脂、(B)含有作為具有2個以上羥基之單環或縮合環的芳香環之芳香族烴樹脂、以及(C)平均粒徑100nm以下之無機填充材。The first resin composition includes (A) an epoxy resin, (B) an aromatic hydrocarbon resin containing an aromatic ring having a single ring or a condensed ring of two or more hydroxyl groups, and (C) an average particle diameter of 100 nm or less. Inorganic filler.
第二樹脂組成物係包含:(A)環氧樹脂、(B)含有作為具有2個以上羥基之單環或縮合環的芳香環之芳香族烴樹脂、以及(C)比表面積15m2 /g以上之無機填充材。The second resin composition contains (A) an epoxy resin, (B) an aromatic hydrocarbon resin containing an aromatic ring as a single ring or a condensed ring having two or more hydroxyl groups, and (C) a specific surface area of 15 m 2 /g. The above inorganic filler.
藉由使用如此之樹脂組成物層,可得到薄的絕緣層。並且,可得到可於所得之絕緣層,一邊抑制暈輪現象一邊形成良好的形狀之通孔之本發明之所期望的效果。By using such a resin composition layer, a thin insulating layer can be obtained. Further, it is possible to obtain a desired effect of the present invention which can form a through hole having a good shape while suppressing the halo phenomenon in the obtained insulating layer.
[2.(A)成分:環氧樹脂] 作為(A)成分之環氧樹脂,可列舉例如:聯二甲苯酚型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、雙酚AF型環氧樹脂、二環戊二烯型環氧樹脂、三酚型環氧樹脂、萘酚酚醛清漆型環氧樹脂、酚酚醛清漆型環氧樹脂、tert-丁基-兒茶酚型環氧樹脂、萘型環氧樹脂、萘酚型環氧樹脂、蒽型環氧樹脂、環氧丙基胺型環氧樹脂、環氧丙基酯型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂、線狀脂肪族環氧樹脂、具有丁二烯構造之環氧樹脂、脂環式環氧樹脂、雜環式環氧樹脂、含螺環之環氧樹脂、環己烷型環氧樹脂、環己烷二甲醇型環氧樹脂、伸萘基醚型環氧樹脂、三羥甲基型環氧樹脂、四苯基乙烷型環氧樹脂等。環氧樹脂係可單獨使用1種,亦可將2種以上組合使用。[2. (A) component: epoxy resin] Examples of the epoxy resin as the component (A) include a bixylenol epoxy resin, a bisphenol A epoxy resin, and a bisphenol F epoxy resin. , bisphenol S type epoxy resin, bisphenol AF type epoxy resin, dicyclopentadiene type epoxy resin, trisphenol type epoxy resin, naphthol novolac type epoxy resin, phenol novolak type epoxy resin , tert-butyl-catechol epoxy resin, naphthalene epoxy resin, naphthol epoxy resin, fluorene epoxy resin, epoxy propyl amine epoxy resin, epoxy propyl ester ring Oxygen resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, linear aliphatic epoxy resin, epoxy resin having butadiene structure, alicyclic epoxy resin, heterocyclic epoxy resin , epoxy resin with spiral ring, cyclohexane epoxy resin, cyclohexane dimethanol epoxy resin, naphthyl ether epoxy resin, trimethylol epoxy resin, tetraphenylethane Type epoxy resin, etc. The epoxy resin may be used singly or in combination of two or more.
樹脂組成物,較佳係作為(A)環氧樹脂而包含於1分子中具有2個以上之環氧基的環氧樹脂。就顯著得到本發明之所期望的效果的觀點而言,相對於(A)環氧樹脂之非揮發性成分100質量%而言,於1分子中具有2個以上之環氧基的環氧樹脂之比例,較佳為50質量%以上,更佳為60質量%以上,特佳為70質量%以上。The resin composition is preferably an epoxy resin having two or more epoxy groups in one molecule as the (A) epoxy resin. From the viewpoint of remarkably obtaining the desired effect of the present invention, an epoxy resin having two or more epoxy groups in one molecule with respect to 100% by mass of the non-volatile component of the epoxy resin (A) The ratio is preferably 50% by mass or more, more preferably 60% by mass or more, and particularly preferably 70% by mass or more.
於環氧樹脂中係有溫度20℃時為液狀之環氧樹脂(以下有時稱為「液狀環氧樹脂」)、與溫度20℃時為固體狀之環氧樹脂(有時稱為「固體狀環氧樹脂」)。樹脂組成物,作為(A)環氧樹脂,雖可僅包含液狀環氧樹脂,亦可僅包含固體狀環氧樹脂,但較佳係組合包含液狀環氧樹脂與固體狀環氧樹脂。藉由組合使用液狀環氧樹脂與固體狀環氧樹脂作為(A)環氧樹脂,而可提昇樹脂組成物層之可撓性,或提昇樹脂組成物層之硬化物的破斷強度。The epoxy resin is a liquid epoxy resin (hereinafter sometimes referred to as "liquid epoxy resin") at a temperature of 20 ° C, and a solid epoxy resin at a temperature of 20 ° C (sometimes called "Solid epoxy resin"). The resin composition may contain only a liquid epoxy resin as the (A) epoxy resin, and may contain only a solid epoxy resin, but it is preferable to contain a liquid epoxy resin and a solid epoxy resin in combination. By using a liquid epoxy resin and a solid epoxy resin as the (A) epoxy resin in combination, the flexibility of the resin composition layer can be improved, or the breaking strength of the cured product of the resin composition layer can be improved.
作為液狀環氧樹脂,較佳係於1分子中具有2個以上之環氧基的液狀環氧樹脂,更佳係於1分子中具有2個以上之環氧基的芳香族系之液狀環氧樹脂。在此,「芳香族系」之環氧樹脂係意味著於其分子內具有芳香環的環氧樹脂。The liquid epoxy resin is preferably a liquid epoxy resin having two or more epoxy groups in one molecule, and more preferably an aromatic liquid having two or more epoxy groups in one molecule. Epoxy resin. Here, the "aromatic" epoxy resin means an epoxy resin having an aromatic ring in its molecule.
作為液狀環氧樹脂,較佳為雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AF型環氧樹脂、萘型環氧樹脂、環氧丙基酯型環氧樹脂、環氧丙基胺型環氧樹脂、酚酚醛清漆型環氧樹脂、具有酯骨架之脂環式環氧樹脂、環己烷型環氧樹脂、環己烷二甲醇型環氧樹脂、環氧丙基胺型環氧樹脂、及具有丁二烯構造之環氧樹脂,更佳為雙酚A型環氧樹脂、雙酚F型環氧樹脂及環己烷型環氧樹脂。As the liquid epoxy resin, a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol AF type epoxy resin, a naphthalene type epoxy resin, a epoxy propyl ester type epoxy resin, or the like is preferable. Epoxypropylamine type epoxy resin, phenol novolak type epoxy resin, alicyclic epoxy resin having ester skeleton, cyclohexane type epoxy resin, cyclohexane dimethanol type epoxy resin, propylene oxide The amide type epoxy resin and the epoxy resin having a butadiene structure are more preferably a bisphenol A type epoxy resin, a bisphenol F type epoxy resin or a cyclohexane type epoxy resin.
作為液狀環氧樹脂之具體例,可列舉:DIC公司製之「HP4032」、「HP4032D」、「HP4032SS」(萘型環氧樹脂);三菱化學公司製之「828US」、「jER828EL」、「825」、「Epikote 828EL」(雙酚A型環氧樹脂);三菱化學公司製之「jER807」、「1750」(雙酚F型環氧樹脂);三菱化學公司製之「jER152」(酚酚醛清漆型環氧樹脂);三菱化學公司製之「630」、「630LSD」(環氧丙基胺型環氧樹脂);新日鐵住金化學公司製之「ZX1059」(雙酚A型環氧樹脂與雙酚F型環氧樹脂之混合品);Nagase chemteX公司製之「EX-721」(環氧丙基酯型環氧樹脂);DAICEL公司製之「CELLOXIDE 2021P」(具有酯骨架之脂環式環氧樹脂);DAICEL公司製之「PB-3600」(具有丁二烯構造之環氧樹脂);新日鐵住金化學公司製之「ZX1658」、「ZX1658GS」(液狀1,4-環氧丙基環己烷型環氧樹脂)等。此等係可單獨使用1種,亦可將2種以上組合使用。Specific examples of the liquid epoxy resin include "HP4032", "HP4032D", and "HP4032SS" (naphthalene epoxy resin) manufactured by DIC Corporation; "828US" and "jER828EL" manufactured by Mitsubishi Chemical Corporation. 825", "Epikote 828EL" (bisphenol A type epoxy resin); "jER807" and "1750" (bisphenol F type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "jER152" (phenol phenolic aldehyde) manufactured by Mitsubishi Chemical Corporation Varnish type epoxy resin); "630" and "630LSD" (epoxypropylamine type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "ZX1059" (bisphenol A type epoxy resin) manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd. "EX-721" (epoxypropyl ester type epoxy resin) manufactured by Nagase ChemteX Co., Ltd.; "CELLOXIDE 2021P" manufactured by DAICEL Co., Ltd. (aliphatic ring with ester skeleton) "Epoxy resin"; "PB-3600" manufactured by DAICEL Co., Ltd. (epoxy resin with butadiene structure); "ZX1658" and "ZX1658GS" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd. (liquid 1,4-ring Oxypropylcyclohexane type epoxy resin). These may be used alone or in combination of two or more.
作為固體狀環氧樹脂,較佳係於1分子中具有3個以上之環氧基的固體狀環氧樹脂,更佳係於1分子中具有3個以上之環氧基的芳香族系之固體狀環氧樹脂。The solid epoxy resin is preferably a solid epoxy resin having three or more epoxy groups in one molecule, and more preferably an aromatic solid having three or more epoxy groups in one molecule. Epoxy resin.
作為固體狀環氧樹脂,較佳為聯二甲苯酚型環氧樹脂、萘型環氧樹脂、萘型4官能環氧樹脂、甲酚酚醛清漆型環氧樹脂、二環戊二烯型環氧樹脂、三酚型環氧樹脂、萘酚型環氧樹脂、聯苯型環氧樹脂、伸萘基醚型環氧樹脂、蒽型環氧樹脂、雙酚A型環氧樹脂、雙酚AF型環氧樹脂、四苯基乙烷型環氧樹脂,更佳為聯二甲苯酚型環氧樹脂、萘型環氧樹脂、雙酚AF型環氧樹脂、及伸萘基醚型環氧樹脂。As the solid epoxy resin, a bixylenol type epoxy resin, a naphthalene type epoxy resin, a naphthalene type tetrafunctional epoxy resin, a cresol novolak type epoxy resin, a dicyclopentadiene type epoxy resin is preferable. Resin, trisphenol epoxy resin, naphthol epoxy resin, biphenyl epoxy resin, naphthyl ether epoxy resin, fluorene epoxy resin, bisphenol A epoxy resin, bisphenol AF type The epoxy resin and the tetraphenylethane type epoxy resin are more preferably a dimethicone type epoxy resin, a naphthalene type epoxy resin, a bisphenol AF type epoxy resin, and a stretch naphthyl ether type epoxy resin.
作為固體狀環氧樹脂之具體例,可列舉:DIC公司製之「HP4032H」(萘型環氧樹脂);DIC公司製之「HP-4700」、「HP-4710」(萘型4官能環氧樹脂);DIC公司製之「N-690」(甲酚酚醛清漆型環氧樹脂);DIC公司製之「N-695」(甲酚酚醛清漆型環氧樹脂);DIC公司製之「HP-7200」(二環戊二烯型環氧樹脂);DIC公司製之「HP-7200HH」、「HP-7200H」、「EXA-7311」、「EXA-7311-G3」、「EXA-7311-G4」、「EXA-7311-G4S」、「HP6000」(伸萘基醚型環氧樹脂);日本化藥公司製之「EPPN-502H」(三酚型環氧樹脂);日本化藥公司製之「NC7000L」(萘酚酚醛清漆型環氧樹脂);日本化藥公司製之「NC3000H」、「NC3000」、「NC3000L」、「NC3100」(聯苯型環氧樹脂);新日鐵住金化學公司製之「ESN475V」(萘型環氧樹脂);新日鐵住金化學公司製之「ESN485」(萘酚酚醛清漆型環氧樹脂);三菱化學公司製之「YX4000H」、「YX4000」、「YL6121」(聯苯型環氧樹脂);三菱化學公司製之「YX4000HK」(聯二甲苯酚型環氧樹脂);三菱化學公司製之「YX8800」(蒽型環氧樹脂);Osaka Gas Chemicals公司製之「PG-100」、「CG-500」;三菱化學公司製之「YL7760」(雙酚AF型環氧樹脂);三菱化學公司製之「YL7800」(茀型環氧樹脂);三菱化學公司製之「jER1010」(固體狀雙酚A型環氧樹脂);三菱化學公司製之「jER1031S」(四苯基乙烷型環氧樹脂)等。此等係可單獨使用1種,亦可將2種以上組合使用。Specific examples of the solid epoxy resin include "HP4032H" (naphthalene type epoxy resin) manufactured by DIC Corporation; "HP-4700" and "HP-4710" manufactured by DIC Corporation (naphthalene type 4-functional epoxy) "N-690" (cresol novolac type epoxy resin) manufactured by DIC Corporation; "N-695" (cresol novolac type epoxy resin) manufactured by DIC Corporation; "HP-made by DIC Corporation" 7200" (dicyclopentadiene type epoxy resin); "HP-7200HH", "HP-7200H", "EXA-7311", "EXA-7311-G3", "EXA-7311-G4" manufactured by DIC Corporation "EXA-7311-G4S", "HP6000" (streptylene ether type epoxy resin); "EPPN-502H" (trisphenol type epoxy resin) manufactured by Nippon Kayaku Co., Ltd.; manufactured by Nippon Kayaku Co., Ltd. "NC7000L" (naphthol novolak type epoxy resin); "NC3000H", "NC3000", "NC3000L", "NC3100" (biphenyl type epoxy resin) manufactured by Nippon Kayaku Co., Ltd.; Nippon Steel & Sumitomo Chemical Co., Ltd. "ESN475V" (naphthalene type epoxy resin); "ESN485" (naphthol novolak type epoxy resin) manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.; "YX4000H" and "YX4000" manufactured by Mitsubishi Chemical Corporation YL6121" (biphenyl type epoxy resin); "YX4000HK" (dimethicone type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YX8800" (蒽 type epoxy resin) manufactured by Mitsubishi Chemical Corporation; Osaka Gas Chemicals "PG-100" and "CG-500"; "YL7760" (bisphenol AF type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YL7800" (茀 type epoxy resin) manufactured by Mitsubishi Chemical Corporation; Mitsubishi Chemical Corporation "jER1010" (solid bisphenol A type epoxy resin) manufactured by the company; "jER1031S" (tetraphenylethane type epoxy resin) manufactured by Mitsubishi Chemical Corporation. These may be used alone or in combination of two or more.
在組合使用液狀環氧樹脂與固體狀環氧樹脂作為(A)環氧樹脂的情況,該等之量比(液狀環氧樹脂:固體狀環氧樹脂),以質量比計,較佳為1:1~1:20,更佳為1:2~1:15,特佳為1:5~1:13。藉由液狀環氧樹脂與固體狀環氧樹脂之量比為如此之範圍,而可顯著得到本發明之所期望的效果。進而,通常在以樹脂薄片之形態作使用的情況時,可獲得適度的黏著性。又,通常在以樹脂薄片之形態作使用的情況時,可得到充分的可撓性,而提昇操作性。進而,通常可得到具有充分的破斷強度之硬化物。In the case where a liquid epoxy resin and a solid epoxy resin are used in combination as the (A) epoxy resin, the ratio (liquid epoxy resin: solid epoxy resin) is preferably a mass ratio. It is 1:1~1:20, more preferably 1:2~1:15, especially good 1:5~1:13. By the ratio of the amount of the liquid epoxy resin to the solid epoxy resin being such a range, the desired effect of the present invention can be remarkably obtained. Further, when it is usually used in the form of a resin sheet, moderate adhesion can be obtained. Moreover, when it is used in the form of a resin sheet, sufficient flexibility can be obtained, and workability can be improved. Further, a cured product having a sufficient breaking strength can be usually obtained.
(A)環氧樹脂之環氧當量,較佳為50~5000,更佳為50~3000,再更佳為80~2000,又再更佳為110~1000。藉由成為此範圍,而使樹脂組成物層之硬化物的交聯密度變得充分,而可獲得表面粗度小的絕緣層。環氧當量為包含1當量之環氧基的樹脂之質量。此環氧當量可依據JIS K7236進行測定。(A) The epoxy equivalent of the epoxy resin is preferably from 50 to 5,000, more preferably from 50 to 3,000, still more preferably from 80 to 2,000, still more preferably from 110 to 1,000. By setting it as this range, the bridge|crosslinking density of the hardened material of the resin composition layer becomes sufficient, and the insulation layer of the surface thickness is small. The epoxy equivalent is the mass of the resin containing 1 equivalent of the epoxy group. This epoxy equivalent can be measured in accordance with JIS K7236.
(A)環氧樹脂之重量平均分子量(Mw),就顯著得到本發明之所期望的效果之觀點而言,較佳為100~5000,更佳為250~3000,再更佳為400~1500。 樹脂之重量平均分子量係可藉由凝膠滲透層析(GPC)法,作為聚苯乙烯換算之值而測定。(A) The weight average molecular weight (Mw) of the epoxy resin is preferably from 100 to 5,000, more preferably from 250 to 3,000, still more preferably from 400 to 1,500, from the viewpoint of remarkably obtaining the desired effect of the present invention. . The weight average molecular weight of the resin can be measured by a gel permeation chromatography (GPC) method as a value in terms of polystyrene.
樹脂組成物中之(A)環氧樹脂之量,就得到顯示良好的機械強度、絕緣可靠性之絕緣層的觀點而言,相對於樹脂組成物中之樹脂成分100質量%而言,較佳為10質量%以上,更佳為20質量%以上,再更佳為30質量%以上。環氧樹脂之含量的上限,就顯著得到本發明之所期望的效果之觀點而言,較佳為90質量%以下,更佳為85質量%以下,特佳為80質量%以下。The amount of the (A) epoxy resin in the resin composition is preferably 100% by mass based on the resin component in the resin composition from the viewpoint of obtaining an insulating layer exhibiting good mechanical strength and insulation reliability. It is 10% by mass or more, more preferably 20% by mass or more, and still more preferably 30% by mass or more. The upper limit of the content of the epoxy resin is preferably 90% by mass or less, more preferably 85% by mass or less, and particularly preferably 80% by mass or less from the viewpoint of obtaining the desired effect of the present invention.
[3.(B)成分:含有作為具有2個以上羥基之單環或縮合環的芳香環之芳香族烴樹脂] 樹脂組成物係包含:含有具有2個以上羥基的芳香環之芳香族烴樹脂作為(B)成分。通常,藉由芳香環所具有之羥基,(B)成分可與(A)環氧樹脂反應,因此,(B)成分可發揮作為用以使樹脂組成物硬化之硬化劑的功能。並且,藉由此(B)成分的作用,可抑制暈輪現象。[3. (B) component: an aromatic hydrocarbon resin containing an aromatic ring having a single ring or a condensed ring of two or more hydroxyl groups] The resin composition contains an aromatic hydrocarbon resin containing an aromatic ring having two or more hydroxyl groups As component (B). In general, the component (B) can be reacted with the (A) epoxy resin by the hydroxyl group of the aromatic ring, and therefore, the component (B) can function as a curing agent for hardening the resin composition. Further, by the action of the component (B), the halo phenomenon can be suppressed.
在此,用語「芳香環」係包含作為如苯環般之單環的芳香環,及作為如萘環般之縮合環的芳香環之任一者。(B)成分中所包含之前述每1個芳香環之碳原子數,就顯著得到本發明之所期望的效果之觀點而言,較佳為6個以上,且較佳為14個以下,更佳為10個以下。Here, the term "aromatic ring" includes either an aromatic ring which is a single ring such as a benzene ring, and an aromatic ring which is a condensed ring such as a naphthalene ring. The number of carbon atoms per one aromatic ring contained in the component (B) is preferably 6 or more, and preferably 14 or less, from the viewpoint of obtaining the desired effect of the present invention. Good for 10 or less.
作為芳香環之例,可列舉:苯環、萘環、蒽環等。又,於芳香族烴樹脂1分子中所包含之芳香環的種類,可為1種,亦可為2種以上。Examples of the aromatic ring include a benzene ring, a naphthalene ring, an anthracene ring and the like. In addition, the type of the aromatic ring to be contained in one molecule of the aromatic hydrocarbon resin may be one type or two or more types.
作為(B)成分之芳香族烴樹脂所包含之芳香環當中,至少一個係每1個該芳香環具有2個以上羥基。每1個芳香環之羥基之數,就顯著得到本發明之所期望的效果之觀點而言,較佳為3個以下,特佳為2個。At least one of the aromatic rings contained in the aromatic hydrocarbon resin as the component (B) has two or more hydroxyl groups per one aromatic ring. The number of hydroxyl groups per one aromatic ring is preferably three or less, and particularly preferably two, from the viewpoint of obtaining the desired effect of the present invention remarkably.
(B)成分之每1分子之具有2個以上羥基的芳香環之數,通常為1個以上,就顯著得到本發明之所期望的效果之觀點而言,較佳為2個以上,更佳為3個以上。上限雖無特別限制,但就抑制立體阻礙提高與環氧樹脂之反應性的觀點而言,較佳為6個以下,更佳為5個以下。The number of the aromatic rings having two or more hydroxyl groups per molecule of the component (B) is usually one or more, and from the viewpoint of obtaining the desired effect of the present invention remarkably, it is preferably two or more, and more preferably It is more than three. The upper limit is not particularly limited, but from the viewpoint of suppressing the steric hindrance from increasing the reactivity with the epoxy resin, it is preferably 6 or less, more preferably 5 or less.
作為適合的(B)成分之例,可列舉以下述式(1)所表示之芳香族烴樹脂、及以下述式(2)所表示之芳香族烴樹脂。Examples of the suitable component (B) include an aromatic hydrocarbon resin represented by the following formula (1) and an aromatic hydrocarbon resin represented by the following formula (2).
於式(1)中,R0 各自獨立表示2價之烴基。2價之烴基,可為脂肪族烴基,亦可為芳香族烴基,亦可為組合有脂肪族烴基及芳香族烴基之基。2價之烴基之碳原子數,通常為1以上,就顯著得到本發明之所期望的效果之觀點而言,較佳係可設為3以上、6以上或7以上。前述之碳原子數的上限,就顯著得到本發明之所期望的效果之觀點而言,較佳係可設為20以下、15以下或10以下。In the formula (1), R 0 each independently represents a divalent hydrocarbon group. The divalent hydrocarbon group may be an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or a group in which an aliphatic hydrocarbon group and an aromatic hydrocarbon group are combined. The number of carbon atoms of the divalent hydrocarbon group is usually 1 or more, and from the viewpoint of remarkably obtaining the desired effect of the present invention, it is preferably 3 or more, 6 or more, or 7 or more. The upper limit of the number of carbon atoms is preferably 20 or less, 15 or less, or 10 or less from the viewpoint of remarkably obtaining the desired effect of the present invention.
作為R0 之具體例,可列舉下述之烴基。Specific examples of R 0 include the following hydrocarbon groups.
於式(1)中,n1表示0以上6以下之整數。其中,n1,就顯著得到本發明之所期望的效果之觀點而言,較佳為1以上,更佳為2以上,且較佳為4以下,更佳為3以下。In the formula (1), n1 represents an integer of 0 or more and 6 or less. Among them, n1 is preferably 1 or more, more preferably 2 or more, and is preferably 4 or less, and more preferably 3 or less from the viewpoint of remarkably obtaining the desired effect of the present invention.
若使用以式(1)所表示之芳香族烴樹脂,則可特別有效地抑制暈輪現象。When the aromatic hydrocarbon resin represented by the formula (1) is used, the halo phenomenon can be particularly effectively suppressed.
於式(2)中,R1 ~R4 各自獨立表示氫原子或1價之烴基。1價之烴基,可為脂肪族烴基,亦可為芳香族烴,亦可為組合有脂肪族烴基及芳香族烴基之基。其中,就顯著得到本發明之所期望的效果之觀點而言,較佳為脂肪族烴基,更佳為飽和脂肪族烴基,特佳為鏈狀飽和脂肪族烴基。1價之烴基之碳原子數,通常為1以上,就顯著得到本發明之所期望的效果之觀點而言,較佳為20以下,更佳為15以下、10以下或8以下。作為R1 ~R4 之較佳例,可列舉:氫原子;甲基、乙基、丙基、丁基、己基等之烷基。若使用以式(2)所表示之芳香族烴樹脂,則可特別有效地抑制粗化處理時之侵蝕導致的暈輪部之剝離。In the formula (2), R 1 to R 4 each independently represent a hydrogen atom or a monovalent hydrocarbon group. The monovalent hydrocarbon group may be an aliphatic hydrocarbon group, an aromatic hydrocarbon or a combination of an aliphatic hydrocarbon group and an aromatic hydrocarbon group. Among them, from the viewpoint of remarkably obtaining the desired effect of the present invention, an aliphatic hydrocarbon group is preferred, a saturated aliphatic hydrocarbon group is more preferred, and a chain saturated aliphatic hydrocarbon group is particularly preferred. The number of carbon atoms of the monovalent hydrocarbon group is usually 1 or more, and from the viewpoint of obtaining the desired effect of the present invention remarkably, it is preferably 20 or less, more preferably 15 or less, 10 or less or 8 or less. Preferable examples of R 1 to R 4 include a hydrogen atom; an alkyl group such as a methyl group, an ethyl group, a propyl group, a butyl group or a hexyl group. When the aromatic hydrocarbon resin represented by the formula (2) is used, the peeling of the halo portion due to the erosion at the time of the roughening treatment can be particularly effectively suppressed.
其中,作為(B)成分為特佳之芳香族烴樹脂,可列舉:以下述式(3)所表示之芳香族烴樹脂、及以下述式(4)所表示之芳香族烴樹脂。於式(3)中,n2表示與式(1)之n1相同定義之整數,較佳之範圍亦相同。又,於式(4)中,R1 ~R4 係與式(2)中之R1 ~R4 同義。In particular, the aromatic hydrocarbon resin represented by the following formula (3) and the aromatic hydrocarbon resin represented by the following formula (4) are exemplified as the aromatic hydrocarbon resin which is particularly preferable as the component (B). In the formula (3), n2 represents an integer defined by the same formula as n1 of the formula (1), and the preferred range is also the same. Further, in the formula (4), R 1 to R 4 are synonymous with R 1 to R 4 in the formula (2).
作為以式(3)所表示之芳香族烴樹脂之市售品,可列舉例如:以下述式(5)所表示之新日鐵住金化學公司製之萘酚系硬化劑「SN395」。於式(5)中,n3表示2或3。又,作為以式(4)所表示之芳香族烴樹脂之市售品,可列舉例如:群榮化學工業公司製之酚系硬化劑「GRA13H」。The commercially available product of the aromatic hydrocarbon resin represented by the formula (3) is, for example, a naphthol-based curing agent "SN395" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., which is represented by the following formula (5). In the formula (5), n3 represents 2 or 3. In addition, as a commercial item of the aromatic hydrocarbon resin represented by the formula (4), for example, the phenolic curing agent "GRA13H" manufactured by Kyoei Chemical Industry Co., Ltd. is mentioned.
作為(B)成分之芳香族烴樹脂,可單獨使用1種,亦可將2種以上組合使用。The aromatic hydrocarbon resin as the component (B) may be used alone or in combination of two or more.
(B)成分之羥基當量,就提高作為樹脂組成物層之硬化物的絕緣層之交聯密度的觀點,及顯著得到本發明之所期望的效果的觀點而言,較佳為50g/eq以上,更佳為60g/eq以上,再更佳為70g/eq以上,又,較佳為200g/eq以下,更佳為150g/eq以下,特佳為120g/eq以下。羥基當量為包含1當量之羥基的樹脂之質量。The hydroxyl equivalent of the component (B) is preferably 50 g/eq or more from the viewpoint of improving the crosslinking density of the insulating layer of the cured product of the resin composition layer and the effect of obtaining the desired effect of the present invention remarkably. More preferably, it is 60 g/eq or more, more preferably 70 g/eq or more, further preferably 200 g/eq or less, more preferably 150 g/eq or less, and particularly preferably 120 g/eq or less. The hydroxyl equivalent is the mass of the resin containing 1 equivalent of the hydroxyl group.
樹脂組成物中之(B)成分之量,相對於樹脂組成物中之樹脂成分100質量%而言,較佳為5質量%以上,更佳為7質量%以上,特佳為9質量%以上,且較佳為50質量%以下,更佳為40質量%以下、30質量%以下或20質量%以下。藉由(B)成分之量為前述範圍,而可有效地抑制暈輪現象。The amount of the component (B) in the resin composition is preferably 5% by mass or more, more preferably 7% by mass or more, and particularly preferably 9% by mass or more based on 100% by mass of the resin component in the resin composition. It is preferably 50% by mass or less, more preferably 40% by mass or less, 30% by mass or less or 20% by mass or less. By the amount of the component (B) being the aforementioned range, the halo phenomenon can be effectively suppressed.
相對於(A)環氧樹脂100質量%之(B)成分之量,較佳為5質量%以上,更佳為8質量%以上,特佳為10質量%以上,且較佳為100質量%以下,更佳為50質量%以下,特佳為30質量%以下。藉由(B)成分之量為前述範圍,而可有效地抑制暈輪現象。The amount of the component (B) in 100% by mass of the (A) epoxy resin is preferably 5% by mass or more, more preferably 8% by mass or more, particularly preferably 10% by mass or more, and preferably 100% by mass. Hereinafter, it is more preferably 50% by mass or less, and particularly preferably 30% by mass or less. By the amount of the component (B) being the aforementioned range, the halo phenomenon can be effectively suppressed.
在將(A)環氧樹脂之環氧基數設為1的情況,(B)成分之羥基數,較佳為0.1以上,更佳為0.2以上,再更佳為0.3以上,且較佳為2以下,更佳為1.5以下,再更佳為1以下,特佳為0.5以下。在此,「(A)環氧樹脂之環氧基數」係指將存在於樹脂組成物中之(A)成分之非揮發性成分的質量除以環氧當量之值全部合計之值。又,「(B)成分之羥基數」係指將存在於樹脂組成物中之(B)成分之非揮發性成分的質量除以羥基當量之值全部合計之值。藉由在將(A)環氧樹脂之環氧基數設為1時之(B)成分之羥基數為前述範圍,而可有效地抑制暈輪現象。When the number of epoxy groups of the (A) epoxy resin is 1, the number of hydroxyl groups of the component (B) is preferably 0.1 or more, more preferably 0.2 or more, still more preferably 0.3 or more, and preferably 2 Hereinafter, it is more preferably 1.5 or less, still more preferably 1 or less, and particularly preferably 0.5 or less. Here, "(A) the number of epoxy groups of the epoxy resin" means a value obtained by dividing the mass of the nonvolatile component of the component (A) present in the resin composition by the value of the epoxy equivalent. In addition, the "number of hydroxyl groups of the component (B)" means a value obtained by dividing the mass of the nonvolatile component of the component (B) present in the resin composition by the value of the hydroxyl equivalent. When the number of hydroxyl groups of the component (B) in the (A) epoxy group is set to 1, the halo phenomenon can be effectively suppressed.
[4.(C)成分:具有100nm以下之平均粒徑及15m2 /g以上之比表面積之至少一者之無機填充材] 樹脂組成物係作為(C)成分而包含無機填充材。依據無機填充材,由於可縮小樹脂組成物層之硬化物的熱膨脹係數,因此可得到回焊翹曲受到抑制的絕緣層。又,作為(C)成分之無機填充材係具有100nm以下之平均粒徑及15m2 /g以上之比表面積之至少一者。藉由將作為無機填充材之具有如此之範圍的平均粒徑及比表面積之至少一者的(C)成分與(B)成分組合使用,而可實現可形成良好的形狀之通孔的絕緣層。[4. (C) component: an inorganic filler having an average particle diameter of 100 nm or less and a specific surface area of 15 m 2 /g or more] The resin composition contains an inorganic filler as the component (C). According to the inorganic filler, since the thermal expansion coefficient of the cured product of the resin composition layer can be reduced, an insulating layer in which the warpage of the reflow is suppressed can be obtained. Further, the inorganic filler as the component (C) has at least one of an average particle diameter of 100 nm or less and a specific surface area of 15 m 2 /g or more. By using the (C) component which is at least one of the average particle diameter and the specific surface area of the inorganic filler as the inorganic filler in combination with the component (B), an insulating layer which can form a through hole of a good shape can be realized. .
作為無機填充材之材料係使用無機化合物。作為無機填充材之材料之例,可列舉:二氧化矽、氧化鋁、玻璃、堇青石、矽氧化物、硫酸鋇、碳酸鋇、滑石、黏土、雲母粉、氧化鋅、水滑石、水鋁礦、氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、氧化鎂、氮化硼、氮化鋁、氮化錳、硼酸鋁、碳酸鍶、鈦酸鍶、鈦酸鈣、鈦酸鎂、鈦酸鉍、氧化鈦、氧化鋯、鈦酸鋇、鋯鈦酸鋇、鋯酸鋇、鋯酸鈣、磷酸鋯、及磷鎢酸鋯等。此等當中,以二氧化矽特別適合。作為二氧化矽,可列舉例如:無定形二氧化矽、熔融二氧化矽、結晶二氧化矽、合成二氧化矽、中空二氧化矽等。又,作為二氧化矽,較佳為球狀二氧化矽。無機填充材係可單獨使用1種,亦可將2種以上組合使用。As the material of the inorganic filler, an inorganic compound is used. Examples of the material of the inorganic filler include cerium oxide, aluminum oxide, glass, cordierite, cerium oxide, barium sulfate, cerium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, and gibbsite. , aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, barium carbonate, barium titanate, calcium titanate, magnesium titanate, titanic acid Bismuth, titanium oxide, zirconium oxide, barium titanate, barium zirconate titanate, barium zirconate, calcium zirconate, zirconium phosphate, zirconium phosphotungstate, and the like. Among these, cerium oxide is particularly suitable. Examples of the cerium oxide include amorphous cerium oxide, molten cerium oxide, crystalline cerium oxide, synthetic cerium oxide, and hollow cerium oxide. Further, as the cerium oxide, spherical cerium oxide is preferred. The inorganic filler may be used singly or in combination of two or more.
(C)成分之平均粒徑,就將絕緣層減薄的觀點,及可控制通孔的形狀來實現良好的形狀的觀點而言,通常為100nm以下,較佳為90nm以下,更佳為80nm以下。該平均粒徑的下限雖無特別限定,但較佳為50nm以上、60nm以上、或70nm以上。作為具有如此之平均粒徑的無機填充材之市售品,可列舉例如:電氣化學工業公司製「UFP-30」、「UFP-40」等。The average particle diameter of the component (C) is usually 100 nm or less, preferably 90 nm or less, and more preferably 80 nm from the viewpoint of reducing the thickness of the insulating layer and controlling the shape of the via hole to achieve a good shape. the following. The lower limit of the average particle diameter is not particularly limited, but is preferably 50 nm or more, 60 nm or more, or 70 nm or more. As a commercial item of the inorganic filler which has such an average particle diameter, the "UFP-30" and the "UFP-40" by the electrochemical industrial company are mentioned, for example.
無機填充材之平均粒徑係可藉由根據米氏(Mie)散射理論的雷射繞射/散射法進行測定。具體而言,可藉由雷射繞射散射式粒徑分布測定裝置,以體積基準製成無機填充材之粒徑分布,將其中位直徑作為平均粒徑而測定。測定樣品係可較佳使用使無機填充材藉由超音波而分散於甲基乙基酮中者。作為雷射繞射散射式粒徑分布測定裝置,可使用堀場製作所公司製「LA-500」、島津製作所公司製「SALD-2200」等。The average particle size of the inorganic filler can be determined by a laser diffraction/scattering method according to the Mie scattering theory. Specifically, the particle size distribution of the inorganic filler can be prepared on a volume basis by a laser diffraction scattering type particle size distribution measuring apparatus, and the median diameter can be measured as an average particle diameter. As the measurement sample, those in which the inorganic filler is dispersed in methyl ethyl ketone by ultrasonic waves can be preferably used. As the laser diffraction scattering type particle size distribution measuring apparatus, "LA-500" manufactured by Horiba, Ltd., and "SALD-2200" manufactured by Shimadzu Corporation can be used.
(C)成分之比表面積,就使控制通孔的形狀成為容易來實現良好的形狀之觀點而言,通常為15m2 /g以上,較佳為20m2 /g以上,特佳為30m2 /g以上。又,如此般比表面積為大的(C)成分,一般而言,由於粒徑小,因此可將絕緣層減薄。上限雖無特別限制,但較佳為60m2 /g以下、50m2 /g以下或40m2 /g以下。無機填充材之比表面積係可藉由BET法進行測定。The specific surface area of the component (C) is usually 15 m 2 /g or more, preferably 20 m 2 /g or more, and particularly preferably 30 m 2 / from the viewpoint of easily controlling the shape of the through hole. g or more. Further, in the case of the component (C) having a large specific surface area, in general, since the particle diameter is small, the insulating layer can be made thin. The upper limit is not particularly limited, but is preferably 60 m 2 /g or less, 50 m 2 /g or less, or 40 m 2 /g or less. The specific surface area of the inorganic filler can be measured by the BET method.
作為(C)成分之無機填充材,就提高耐濕性及分散性的觀點而言,較佳係以表面處理劑加以處理。作為表面處理劑,可列舉例如:含氟矽烷偶合劑、胺基矽烷系偶合劑、環氧矽烷系偶合劑、巰基矽烷系偶合劑、矽烷系偶合劑、烷氧基矽烷、有機矽氮烷化合物、鈦酸酯系偶合劑等。又,表面處理劑係可單獨使用1種,亦可將2種以上任意地組合使用。The inorganic filler as the component (C) is preferably treated with a surface treatment agent from the viewpoint of improving moisture resistance and dispersibility. Examples of the surface treatment agent include a fluorine-containing decane coupling agent, an amino decane coupling agent, an epoxy decane coupling agent, a mercapto decane coupling agent, a decane coupling agent, an alkoxy decane, and an organic decane compound. , a titanate coupling agent, and the like. Further, the surface treatment agent may be used singly or in combination of two or more kinds.
作為表面處理劑之市售品,可列舉例如:信越化學工業公司製「KBM403」(3-環氧丙氧基丙基三甲氧基矽烷)、信越化學工業公司製「KBM803」(3-巰基丙基三甲氧基矽烷)、信越化學工業公司製「KBE903」(3-胺基丙基三乙氧基矽烷)、信越化學工業公司製「KBM573」(N-苯基-3-胺基丙基三甲氧基矽烷)、信越化學工業公司製「SZ-31」(六甲基二矽氮烷)、信越化學工業公司製「KBM103」(苯基三甲氧基矽烷)、信越化學工業公司製「KBM-4803」(長鏈環氧型矽烷偶合劑)、信越化學工業公司製「KBM-7103」(3,3,3-三氟丙基三甲氧基矽烷)等。For example, "KBM403" (3-glycidoxypropyltrimethoxydecane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM803" (3-Mercaptopropyl C) manufactured by Shin-Etsu Chemical Co., Ltd. "Ketium methoxy decane", "KBE903" (3-aminopropyltriethoxy decane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM573" manufactured by Shin-Etsu Chemical Co., Ltd. (N-phenyl-3-aminopropyltrimethyl) "oxyzane", "SZ-31" (hexamethyldiazane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM103" (phenyltrimethoxydecane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM-" manufactured by Shin-Etsu Chemical Co., Ltd. 4803" (long-chain epoxy decane coupling agent), "KBM-7103" (3,3,3-trifluoropropyltrimethoxydecane) manufactured by Shin-Etsu Chemical Co., Ltd., and the like.
以表面處理劑進行之表面處理的程度,就無機填充材之分散性提昇的觀點而言,較佳係落入特定的範圍內。具體而言,無機填充材100質量份,較佳係以0.2質量份~5質量份之表面處理劑進行表面處理,較佳係以0.2質量份~3質量份進行表面處理,較佳係以0.3質量份~2質量份進行表面處理。The degree of surface treatment by the surface treatment agent is preferably within a specific range from the viewpoint of improving the dispersibility of the inorganic filler. Specifically, 100 parts by mass of the inorganic filler, preferably 0.2 parts by mass to 5 parts by mass of the surface treatment agent, is preferably surface-treated with 0.2 parts by mass to 3 parts by mass, preferably 0.3. The mass parts are ~2 parts by mass for surface treatment.
以表面處理劑進行之表面處理的程度,可藉由無機填充材之每單位表面積之碳量進行評估。無機填充材之每單位表面積之碳量,就無機填充材之分散性提昇的觀點而言,較佳為0.02mg/m2 以上,更佳為0.1mg/m2 以上,再更佳為0.2mg/m2 以上。另一方面,就抑制樹脂清漆之溶融黏度及薄片形態下之溶融黏度的上昇之觀點而言,較佳為1mg/m2 以下,更佳為0.8mg/m2 以下,再更佳為0.5mg/m2 以下。The degree of surface treatment by the surface treatment agent can be evaluated by the amount of carbon per unit surface area of the inorganic filler. The amount of carbon per unit surface area of the inorganic filler is preferably 0.02 mg/m 2 or more, more preferably 0.1 mg/m 2 or more, still more preferably 0.2 mg, from the viewpoint of improving the dispersibility of the inorganic filler. /m 2 or more. On the other hand, from the viewpoint of suppressing the melt viscosity of the resin varnish and the increase of the melt viscosity in the sheet form, it is preferably 1 mg/m 2 or less, more preferably 0.8 mg/m 2 or less, still more preferably 0.5 mg. /m 2 or less.
無機填充材之每單位表面積之碳量,可在將表面處理後之無機填充材藉由溶劑(例如,甲基乙基酮(MEK))洗淨處理之後進行測定。具體而言,將作為溶劑為充分之量的MEK添加於以表面處理劑加以表面處理後的無機填充材,以25℃進行5分鐘超音波洗淨。可在將上澄液去除,使固體成分乾燥之後,使用碳分析計來測定無機填充材之每單位表面積之碳量。作為碳分析計係可使用堀場製作所公司製「EMIA-320V」等。The amount of carbon per unit surface area of the inorganic filler can be measured after the surface-treated inorganic filler is washed by a solvent (for example, methyl ethyl ketone (MEK)). Specifically, a sufficient amount of MEK as a solvent was added to the inorganic filler which was surface-treated with a surface treatment agent, and ultrasonic cleaning was performed at 25 ° C for 5 minutes. After the supernatant liquid is removed and the solid component is dried, a carbon analyzer is used to determine the amount of carbon per unit surface area of the inorganic filler. As the carbon analyzer, "EMIA-320V" manufactured by Horiba, Ltd. can be used.
樹脂組成物中之(C)成分之量,就降低絕緣層之介電正切的觀點而言,相對於樹脂組成物中之非揮發性成分100質量%而言,較佳為30質量%以上,更佳為35質量%以上,再更佳為40質量%以上。又,以往,在如此般地包含多量無機填充材的樹脂組成物之層為薄的情況,使通孔的形狀成為良好是困難的,尤其,若無機填充材之量相對於樹脂組成物中之非揮發性成分100質量%,為50質量%以上,則形成良好的形狀之通孔係特別困難。因此,就有效地活用可形成如此般以往特別困難之良好的形狀之通孔的本發明之優點的觀點,(C)成分之量相對於樹脂組成物中之非揮發性成分100質量%,較佳為50質量%以上,特佳為54質量%以上。(C)成分之量的上限相對於樹脂組成物中之非揮發性成分100質量%,就提高絕緣層之機械強度的觀點而言,較佳為90質量%以下,更佳為85質量%以下,再更佳為80質量%以下、或75質量%以下。The amount of the component (C) in the resin composition is preferably 30% by mass or more based on 100% by mass of the nonvolatile component in the resin composition, from the viewpoint of lowering the dielectric tangent of the insulating layer. More preferably, it is 35 mass% or more, and still more preferably 40 mass% or more. In addition, in the case where the layer of the resin composition containing a large amount of the inorganic filler is thin, it is difficult to make the shape of the through hole favorable, in particular, if the amount of the inorganic filler is relative to the resin composition. When the nonvolatile component is 100% by mass or more and is 50% by mass or more, it is particularly difficult to form a through hole system having a good shape. Therefore, from the viewpoint of effectively utilizing the advantages of the present invention which can form a through-hole having a shape which is particularly difficult in the past, the amount of the component (C) is 100% by mass relative to the non-volatile component in the resin composition. It is preferably 50% by mass or more, and particularly preferably 54% by mass or more. The upper limit of the amount of the component (C) is preferably 90% by mass or less, and more preferably 85% by mass or less from the viewpoint of increasing the mechanical strength of the insulating layer with respect to 100% by mass of the nonvolatile component in the resin composition. More preferably, it is 80 mass% or less, or 75 mass% or less.
[5.(D)成分:熱塑性樹脂] 樹脂組成物係除了上述之成分以外,亦可進一步包含(D)熱塑性樹脂作為任意成分。[5. Component (D): Thermoplastic Resin] The resin composition may further contain (D) a thermoplastic resin as an optional component in addition to the above components.
作為(D)成分之熱塑性樹脂,可列舉例如:苯氧基樹脂、聚乙烯縮醛樹脂、聚烯烴樹脂、聚丁二烯樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚醚醯亞胺樹脂、聚碸樹脂、聚醚碸樹脂、聚苯醚樹脂樹脂、聚碳酸酯樹脂、聚醚醚酮樹脂、聚酯樹脂等。其中,就顯著得到本發明之所期望的效果之觀點,以及得到與表面粗度小的導體層之密著性特別優異的絕緣層之觀點而言,較佳為苯氧基樹脂。又,熱塑性樹脂係可單獨使用1種,或可將2種以上組合使用。Examples of the thermoplastic resin as the component (D) include a phenoxy resin, a polyvinyl acetal resin, a polyolefin resin, a polybutadiene resin, a polyimide resin, a polyamide amide resin, and a polyether. A quinone imine resin, a polyfluorene resin, a polyether oxime resin, a polyphenylene ether resin resin, a polycarbonate resin, a polyether ether ketone resin, a polyester resin, or the like. Among them, from the viewpoint of obtaining the desired effect of the present invention remarkably, and obtaining an insulating layer which is particularly excellent in adhesion to a conductor layer having a small surface roughness, a phenoxy resin is preferable. Further, the thermoplastic resin may be used singly or in combination of two or more.
作為苯氧基樹脂,可例舉例如:具有選自由雙酚A骨架、雙酚F骨架、雙酚S骨架、雙酚苯乙酮骨架、酚醛清漆骨架、聯苯骨架、茀骨架、二環戊二烯骨架、降莰烯骨架、萘骨架、蒽骨架、金剛烷骨架、萜烯骨架、及三甲基環己烷骨架所成之群中的1種以上之骨架的苯氧基樹脂。苯氧基樹脂之末端亦可為酚性羥基、環氧基等之任一種官能基。The phenoxy resin may, for example, be selected from the group consisting of a bisphenol A skeleton, a bisphenol F skeleton, a bisphenol S skeleton, a bisphenol acetophenone skeleton, a novolak skeleton, a biphenyl skeleton, an anthracene skeleton, and a dicyclopentane. A phenoxy resin having at least one of a diene skeleton, a norbornene skeleton, a naphthalene skeleton, an anthracene skeleton, an adamantane skeleton, a terpene skeleton, and a trimethylcyclohexane skeleton. The terminal of the phenoxy resin may be any one of a phenolic hydroxyl group and an epoxy group.
作為苯氧基樹脂之具體例,可列舉:三菱化學公司製之「1256」及「4250」(均為含雙酚A骨架之苯氧基樹脂);三菱化學公司製之「YX8100」(含雙酚S骨架之苯氧基樹脂);三菱化學公司製之「YX6954」(含雙酚苯乙酮骨架之苯氧基樹脂);新日鐵住金化學公司製之「FX280」及「FX293」;三菱化學公司製之「YL7500BH30」、「YX6954BH30」、「YX7553」、「YX7553BH30」、「YL7769BH30」、「YL6794」、「YL7213」、「YL7290」及「YL7482」等。Specific examples of the phenoxy resin include "1256" and "4250" manufactured by Mitsubishi Chemical Corporation (both phenoxy resins containing a bisphenol A skeleton); "YX8100" manufactured by Mitsubishi Chemical Corporation (including double "Phenyl resin of phenol S skeleton"; "YX6954" manufactured by Mitsubishi Chemical Corporation (phenoxy resin containing bisphenol acetophenone skeleton); "FX280" and "FX293" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.; Mitsubishi "YL7500BH30", "YX6954BH30", "YX7553", "YX7553BH30", "YL7769BH30", "YL6794", "YL7213", "YL7290" and "YL7482" manufactured by Chemical Company.
作為聚乙烯縮醛樹脂,可列舉例如:聚乙烯甲醛樹脂、聚乙烯丁醛樹脂,較佳為聚乙烯丁醛樹脂。作為聚乙烯縮醛樹脂之具體例,可列舉:電氣化學工業公司製之「Denka Butyral 4000-2」、「Denka Butyral 5000-A」、「Denka Butyral 6000-C」、「Denka Butyral 6000-EP」;積水化學工業公司製之S-LEC BH系列、BX系列(例如BX-5Z)、KS系列(例如KS-1)、BL系列、BM系列等。The polyvinyl acetal resin may, for example, be a polyethylene formaldehyde resin or a polyvinyl butyral resin, preferably a polyvinyl butyral resin. Specific examples of the polyvinyl acetal resin include "Denka Butyral 4000-2", "Denka Butyral 5000-A", "Denka Butyral 6000-C", and "Denka Butyral 6000-EP" manufactured by Denki Kogyo Co., Ltd. S-LEC BH series, BX series (such as BX-5Z), KS series (such as KS-1), BL series, BM series, etc. manufactured by Sekisui Chemical Industry Co., Ltd.
作為聚醯亞胺樹脂之具體例,可列舉:新日本理化公司製之「RIKACOAT SN20」及「RIKACOAT PN20」。作為聚醯亞胺樹脂之具體例,又可列舉:使2官能性羥基末端聚丁二烯、二異氰酸酯化合物及四元酸酐進行反應所得之線狀聚醯亞胺(日本特開2006-37083號公報記載之聚醯亞胺)、含聚矽氧烷骨架之聚醯亞胺(日本特開2002-12667號公報及日本特開2000-319386號公報等記載之聚醯亞胺)等之變性聚醯亞胺。Specific examples of the polyimine resin include "RIKACOAT SN20" and "RIKACOAT PN20" manufactured by Nippon Chemical and Chemical Co., Ltd. Specific examples of the polyimine resin include a linear polyimine obtained by reacting a bifunctional hydroxyl-terminated polybutadiene, a diisocyanate compound, and a tetrabasic acid anhydride (JP-A-2006-37083) The polycondensation of poly-imines, which are described in the above-mentioned publications, and poly-imines, which are described in JP-A-2002-210667 and JP-A-2000-319386, etc. Yttrium.
作為聚醯胺醯亞胺樹脂之具體例,可列舉:東洋紡公司製之「VYLOMAX HR11NN」及「VYLOMAX HR16NN」。作為聚醯胺醯亞胺樹脂之具體例,又可列舉:日立化成公司製之「KS9100」、「KS9300」(含聚矽氧烷骨架之聚醯胺醯亞胺)等之變性聚醯胺醯亞胺。Specific examples of the polyamidoximine resin include "VYLOMAX HR11NN" and "VYLOMAX HR16NN" manufactured by Toyobo Co., Ltd. Specific examples of the polyamidoximine resin include denatured polyamides such as "KS9100" and "KS9300" (polyamidoquinone containing a polyoxyalkylene skeleton) manufactured by Hitachi Chemical Co., Ltd. Imine.
作為聚醚碸樹脂之具體例,可列舉住友化學公司製之「PES5003P」等。Specific examples of the polyether oxime resin include "PES5003P" manufactured by Sumitomo Chemical Co., Ltd., and the like.
作為聚苯醚樹脂之具體例,可列舉:Mitsubishi Gas Chemical公司製之oligo phenylene ether(OPE).苯乙烯樹脂「OPE-2St 1200」等。Specific examples of the polyphenylene ether resin include oligo phenylene ether (OPE) manufactured by Mitsubishi Gas Chemical Co., Ltd., styrene resin "OPE-2 St 1200", and the like.
作為聚碸樹脂之具體例,可列舉:Solvay Advanced Polymers公司製之聚碸「P1700」、「P3500」等。Specific examples of the polybenzazole resin include "P1700" and "P3500" manufactured by Solvay Advanced Polymers Co., Ltd.
(D)熱塑性樹脂之重量平均分子量(Mw),就顯著得到本發明之所期望的效果之觀點而言,較佳為8,000以上,更佳為10,000以上,特佳為20,000以上,且較佳為70,000以下,更佳為60,000以下,特佳為50,000以下。The weight average molecular weight (Mw) of the thermoplastic resin (D) is preferably 8,000 or more, more preferably 10,000 or more, particularly preferably 20,000 or more, and more preferably from the viewpoint of remarkably obtaining the desired effect of the present invention. 70,000 or less, more preferably 60,000 or less, and particularly preferably 50,000 or less.
在使用(D)熱塑性樹脂的情況,於樹脂組成物中之(D)熱塑性樹脂之量,就顯著得到本發明之所期望的效果之觀點而言,相對於樹脂組成物中之樹脂成分100質量%而言,較佳為0.1質量%以上,更佳為0.5質量%以上,再更佳為1質量%以上,且較佳為15質量%以下,更佳為12質量%以下,再更佳為10質量%以下。In the case of using the (D) thermoplastic resin, the amount of the (D) thermoplastic resin in the resin composition is 100% by mass from the resin composition in terms of the desired effect of the present invention. % is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, still more preferably 1% by mass or more, and is preferably 15% by mass or less, more preferably 12% by mass or less, and still more preferably 10% by mass or less.
[6.(E)成分:硬化劑] 樹脂組成物係除了上述之成分以外,亦可進一步包含(B)成分以外之(E)硬化劑作為任意成分。[6. (E) component: curing agent] The resin composition may further contain (E) a curing agent other than the component (B) as an optional component in addition to the above components.
作為(E)成分之硬化劑,可使用具有使(A)成分硬化的作用者。作為(E)硬化劑,可列舉例如:活性酯系硬化劑、酚系硬化劑、萘酚系硬化劑、苯并嗪系硬化劑、氰酸酯系硬化劑、及碳二醯亞胺系硬化劑等。又,硬化劑係可單獨使用1種,或者亦可併用2種以上。其中,就顯著得到本發明之所期望的效果之觀點而言,較佳為活性酯系硬化劑。As the hardener of the component (E), those having an action of hardening the component (A) can be used. Examples of the (E) curing agent include an active ester-based curing agent, a phenol-based curing agent, a naphthol-based curing agent, and benzo. A azine-based curing agent, a cyanate-based curing agent, and a carbodiimide-based curing agent. Further, the curing agent may be used singly or in combination of two or more. Among them, from the viewpoint of remarkably obtaining the desired effects of the present invention, an active ester-based curing agent is preferred.
作為活性酯系硬化劑,可使用於1分子中具有1個以上之活性酯基的化合物。其中,作為活性酯系硬化劑,較佳為酚酯類、硫酚酯類、N-羥基胺酯類、雜環羥基化合物之酯類等之於1分子中具有2個以上反應活性高的酯基的化合物。該活性酯系硬化劑,較佳係藉由羧酸化合物及/或硫代羧酸化合物與羥基化合物及/或硫醇化合物之縮合反應所得者。尤其,就耐熱性提昇的觀點而言,較佳係由羧酸化合物與羥基化合物所得之活性酯系硬化劑,更佳係由羧酸化合物與酚化合物及/或萘酚化合物所得之活性酯系硬化劑。As the active ester-based curing agent, a compound having one or more active ester groups in one molecule can be used. In particular, the active ester-based curing agent is preferably an ester having two or more reactive groups in one molecule, such as a phenol ester, a thiophenol ester, an N-hydroxylamine, or an ester of a heterocyclic hydroxy compound. Base compound. The active ester-based curing agent is preferably obtained by a condensation reaction of a carboxylic acid compound and/or a thiocarboxylic acid compound with a hydroxy compound and/or a thiol compound. In particular, from the viewpoint of heat resistance improvement, an active ester-based curing agent obtained from a carboxylic acid compound and a hydroxy compound is preferred, and an active ester system derived from a carboxylic acid compound and a phenol compound and/or a naphthol compound is more preferred. hardener.
作為羧酸化合物,可列舉例如:苯甲酸、乙酸、琥珀酸、馬來酸、衣康酸、鄰苯二甲酸、間苯二甲酸、對苯二甲酸、苯均四酸等。Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, and pyromellitic acid.
作為酚化合物或萘酚化合物,可列舉例如:氫醌、間苯二酚、雙酚A、雙酚F、雙酚S、酚酞、甲基化雙酚A、甲基化雙酚F、甲基化雙酚S、酚、o-甲酚、m-甲酚、p-甲酚、鄰苯二酚、α-萘酚、β-萘酚、1,5-二羥基萘、1,6-二羥基萘、2,6-二羥基萘、二羥基二苯基酮、三羥基二苯基酮、四羥基二苯基酮、根皮三酚、苯三酚、二環戊二烯型二酚化合物、酚酚醛清漆等。在此,「二環戊二烯型二酚化合物」係指二環戊二烯1分子與酚2分子進行縮合所得之二酚化合物。Examples of the phenol compound or the naphthol compound include hydroquinone, resorcin, bisphenol A, bisphenol F, bisphenol S, phenolphthalein, methylated bisphenol A, methylated bisphenol F, and methyl group. Bisphenol S, phenol, o-cresol, m-cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-di Hydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxydiphenyl ketone, trihydroxydiphenyl ketone, tetrahydroxydiphenyl ketone, cadaverin, benzenetriol, dicyclopentadiene type diphenol compound , phenol novolac and the like. Here, the "dicyclopentadiene type diphenol compound" means a diphenol compound obtained by condensing a molecule of dicyclopentadiene with a molecule of phenol 2.
作為活性酯系硬化劑之較佳具體例,可列舉:包含二環戊二烯型二酚構造之活性酯化合物、包含萘構造之活性酯化合物、包含酚酚醛清漆之乙醯化物之活性酯化合物、包含酚酚醛清漆之苯甲醯化物之活性酯化合物。其中,更佳係包含萘構造之活性酯化合物、包含二環戊二烯型二酚構造之活性酯化合物。「二環戊二烯型二酚構造」係表示由伸苯基-二環伸戊基-伸苯基所構成之2價之構造單位。Preferred examples of the active ester-based curing agent include an active ester compound containing a dicyclopentadiene-type diphenol structure, an active ester compound containing a naphthalene structure, and an active ester compound containing an acetal of a phenol novolak. An active ester compound comprising a benzamidine phenolic novolac. Among them, an active ester compound containing a naphthalene structure or an active ester compound containing a dicyclopentadiene type diphenol structure is more preferable. The "dicyclopentadiene type diphenol structure" means a divalent structural unit composed of a phenyl-bicyclopentyl-phenylene group.
作為活性酯系硬化劑之市售品,可列舉:作為包含二環戊二烯型二酚構造之活性酯化合物之「EXB9451」、「EXB9460」、「EXB9460S」、「HPC-8000-65T」、「HPC-8000H-65TM」、「EXB-8000L-65TM」、「EXB-8150-65T」(DIC公司製);作為包含萘構造之活性酯化合物之「EXB9416-70BK」(DIC公司製);作為包含酚酚醛清漆之乙醯化物之活性酯化合物之「DC808」(三菱化學公司製);作為包含酚酚醛清漆之苯甲醯化物之活性酯化合物之「YLH1026」(三菱化學公司製);作為酚酚醛清漆之乙醯化物之活性酯系硬化劑之「DC808」(三菱化學公司製);作為酚酚醛清漆之苯甲醯化物之活性酯系硬化劑之「YLH1026」(三菱化學公司製)、「YLH1030」(三菱化學公司製)、「YLH1048」(三菱化學公司製)等。As a commercial product of the active ester-based curing agent, "EXB9451", "EXB9460", "EXB9460S", "HPC-8000-65T", which are active ester compounds containing a dicyclopentadiene-type diphenol structure, may be mentioned. "EXB9416-70BK" (manufactured by DIC Corporation), which is an active ester compound containing a naphthalene structure, as "HPC-8000H-65TM", "EXB-800L-65TM", "EXB-8150-65T" (manufactured by DIC Corporation); "DC808" (manufactured by Mitsubishi Chemical Corporation), which is an active ester compound of an acetal phenolic aldehyde varnish, and "YLH1026" (manufactured by Mitsubishi Chemical Corporation) as an active ester compound of a benzoic acid phenolic phenol varnish; "DC808" (manufactured by Mitsubishi Chemical Corporation), an active ester-based hardener of acetaldehyde varnish, and "YLH1026" (manufactured by Mitsubishi Chemical Corporation), which is an active ester-based hardener of benzamidine phenolic varnish. YLH1030 (manufactured by Mitsubishi Chemical Corporation) and "YLH1048" (manufactured by Mitsubishi Chemical Corporation).
作為酚系硬化劑及萘酚系硬化劑,就耐熱性及耐水性的觀點而言,較佳係具有酚醛清漆構造者。又,就與導體層之密著性的觀點而言,較佳為含氮酚系硬化劑,更佳為含三嗪骨架之酚系硬化劑。The phenolic curing agent and the naphthol-based curing agent are preferably those having a novolak structure from the viewpoint of heat resistance and water resistance. Moreover, from the viewpoint of adhesion to the conductor layer, a nitrogen-containing phenol-based curing agent is preferable, and a triazine skeleton-containing phenol-based curing agent is more preferable.
作為酚系硬化劑及萘酚系硬化劑之具體例,可列舉例如:明和化成公司製之「MEH-7700」、「MEH-7810」、「MEH-7851」;日本化藥公司製之「NHN」、「CBN」、「GPH」;新日鐵住金化學公司製之「SN170」、「SN180」、「SN190」、「SN475」、「SN485」、「SN495」、「SN-495V」「SN375」;DIC公司製之「TD-2090」、「LA-7052」、「LA-7054」、「LA-1356」、「LA-3018-50P」、「EXB-9500」等。Specific examples of the phenolic curing agent and the naphthol-based curing agent include "MEH-7700", "MEH-7810", and "MEH-7851" manufactured by Mingwa Chemical Co., Ltd., and "NHN" manufactured by Nippon Kayaku Co., Ltd. "CBN", "GPH"; "SN170", "SN180", "SN190", "SN475", "SN485", "SN495", "SN-495V" and "SN375" made by Nippon Steel & Sumitomo Chemical Co., Ltd. DIC Corporation's "TD-2090", "LA-7052", "LA-7054", "LA-1356", "LA-3018-50P", "EXB-9500", etc.
作為苯并嗪系硬化劑之具體例,可列舉:昭和高分子公司製之「HFB2006M」、四國化成工業公司製之「P-d」、「F-a」。Benzo Specific examples of the azine-based sizing agent include "HFB2006M" manufactured by Showa Polymer Co., Ltd., and "Pd" and "Fa" manufactured by Shikoku Chemical Industries Co., Ltd.
作為氰酸酯系硬化劑,可列舉例如:雙酚A二氰酸酯、多酚氰酸酯、寡(3-亞甲基-1,5-伸苯基氰酸酯)、4,4’-亞甲基雙(2,6-二甲基苯基氰酸酯)、4,4’-亞乙基二苯基二氰酸酯、六氟雙酚A二氰酸酯、2,2-雙(4-氰酸酯)苯基丙烷、1,1-雙(4-氰酸酯苯基甲烷)、雙(4-氰酸酯-3,5-二甲基苯基)甲烷、1,3-雙(4-氰酸酯苯基-1-(甲基亞乙基))苯、雙(4-氰酸酯苯基)硫醚、及雙(4-氰酸酯苯基)醚等之2官能氰酸酯樹脂;由酚酚醛清漆及甲酚酚醛清漆等所衍生的多官能氰酸酯樹脂;此等氰酸酯樹脂一部分經三嗪化的預聚物等。作為氰酸酯系硬化劑之具體例,可列舉:Lonza Japan公司製之「PT30」及「PT60」(酚酚醛清漆型多官能氰酸酯樹脂)、「ULL-950S」(多官能氰酸酯樹脂)、「BA230」、「BA230S75」(雙酚A二氰酸酯的一部分或全部被三嗪化而成為三聚物的預聚物)等。Examples of the cyanate-based curing agent include bisphenol A dicyanate, polyphenol cyanate, oligo(3-methylene-1,5-phenylenecyanate), and 4,4'. -methylenebis(2,6-dimethylphenyl cyanate), 4,4'-ethylenediphenyl dicyanate, hexafluorobisphenol A dicyanate, 2,2- Bis(4-cyanate) phenylpropane, 1,1-bis(4-cyanate phenylmethane), bis(4-cyanate-3,5-dimethylphenyl)methane, 1, 3-bis(4-cyanate phenyl-1-(methylethylidene)) benzene, bis(4-cyanate phenyl) sulfide, and bis(4-cyanate phenyl) ether a bifunctional cyanate resin; a polyfunctional cyanate resin derived from a phenol novolak and a cresol novolak; and a pre-polymerized triazine-based prepolymer such as a part of the cyanate resin. Specific examples of the cyanate-based curing agent include "PT30" and "PT60" (phenol novolac type polyfunctional cyanate resin) manufactured by Lonza Japan Co., Ltd., and "ULL-950S" (polyfunctional cyanate). Resin), "BA230", "BA230S75" (a part or all of bisphenol A dicyanate is triazineized to form a prepolymer of a terpolymer).
作為碳二醯亞胺系硬化劑之具體例,可列舉Nisshinbo Chemical公司製之「V-03」、「V-07」等。Specific examples of the carbodiimide-based curing agent include "V-03" and "V-07" manufactured by Nisshinbo Chemical Co., Ltd.
在使用(E)硬化劑的情況,樹脂組成物中之(E)硬化劑之量,就顯著得到本發明之所期望的效果之觀點而言,相對於樹脂組成物中之樹脂成分100質量%而言,較佳為0.1質量%以上,更佳為0.5質量%以上,再更佳為1質量%以上,且較佳為20質量%以下,更佳為15質量%以下,再更佳為12質量%以下。In the case of using the (E) hardener, the amount of the (E) hardener in the resin composition is 100% by mass relative to the resin component in the resin composition from the viewpoint of remarkably obtaining the desired effect of the present invention. The amount is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, still more preferably 1% by mass or more, and is preferably 20% by mass or less, more preferably 15% by mass or less, and still more preferably 12% by mass or more. Below mass%.
又,在使用(E)硬化劑的情況,樹脂組成物中之(E)硬化劑之量,就顯著得到本發明之所期望的效果之觀點而言,相對於(B)成分100質量%而言,較佳為40質量%以上,更佳為50質量%以上,特佳為60質量%以上,且較佳為120質量%以下,更佳為100質量%以下,特佳為90質量%以下。Further, in the case of using the (E) curing agent, the amount of the (E) curing agent in the resin composition is 100% by mass relative to the component (B) from the viewpoint of remarkably obtaining the desired effect of the present invention. In particular, it is preferably 40% by mass or more, more preferably 50% by mass or more, particularly preferably 60% by mass or more, and preferably 120% by mass or less, more preferably 100% by mass or less, and particularly preferably 90% by mass or less. .
進而,在將(A)環氧樹脂之環氧基數設為1的情況,(E)成分之活性基數,較佳為0.1以上,更佳為0.2以上,且較佳為2以下,更佳為1.5以下,較更佳為1以下,特佳為0.5以下。在此,「(E)成分之活性基數」係指將存在於樹脂組成物中的(E)成分之非揮發性成分的質量除以活性基當量之值全部合計之值。藉由在將(A)環氧樹脂之環氧基數設為1時之(E)成分之活性基數為前述範圍,而可得到機械強度特別優異的絕緣層。Further, when the number of epoxy groups of the (A) epoxy resin is 1, the active group of the component (E) is preferably 0.1 or more, more preferably 0.2 or more, and still more preferably 2 or less, more preferably 1.5 or less, more preferably 1 or less, and particularly preferably 0.5 or less. Here, the "activity group of the component (E)" means a value obtained by dividing the mass of the non-volatile component of the component (E) present in the resin composition by the value of the active group equivalent. When the number of active groups of the component (E) in the (A) epoxy group is set to 1, the insulating layer is particularly excellent in mechanical strength.
[7.(F)成分:硬化促進劑] 樹脂組成物係除了上述之成分以外,亦可進一步包含(F)硬化促進劑作為任意成分。[7. (F) Component: Hardening Accelerator] The resin composition may further contain (F) a curing accelerator as an optional component in addition to the above components.
作為硬化促進劑,可列舉例如:磷系硬化促進劑、胺系硬化促進劑、咪唑系硬化促進劑、胍系硬化促進劑、金屬系硬化促進劑等。其中,較佳為磷系硬化促進劑、胺系硬化促進劑、咪唑系硬化促進劑、金屬系硬化促進劑,更佳為胺系硬化促進劑、咪唑系硬化促進劑、金屬系硬化促進劑。硬化促進劑係可單獨使用1種,亦可將2種以上組合使用。Examples of the curing accelerator include a phosphorus-based curing accelerator, an amine-based curing accelerator, an imidazole-based curing accelerator, an oxime-based curing accelerator, and a metal-based curing accelerator. Among them, a phosphorus-based curing accelerator, an amine-based curing accelerator, an imidazole-based curing accelerator, and a metal-based curing accelerator are preferable, and an amine-based curing accelerator, an imidazole-based curing accelerator, and a metal-based curing accelerator are more preferable. The curing accelerator may be used singly or in combination of two or more.
作為磷系硬化促進劑,可列舉例如:三苯基膦、鏻硼酸鹽化合物、四苯基鏻四苯基硼酸鹽、n-丁基鏻四苯基硼酸鹽、四丁基鏻癸酸鹽、(4-甲基苯基)三苯基鏻硫氰酸鹽、四苯基鏻硫氰酸鹽、丁基三苯基鏻硫氰酸鹽等,較佳為三苯基膦、四丁基鏻癸酸鹽。Examples of the phosphorus-based hardening accelerator include triphenylphosphine, strontium borate compound, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, and tetrabutylphosphonate. (4-methylphenyl)triphenylphosphonium thiocyanate, tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate, etc., preferably triphenylphosphine, tetrabutylphosphonium Citrate.
作為胺系硬化促進劑,可列舉例如:三乙基胺、三丁基胺等之三烷基胺、4-二甲基胺基吡啶、苄基二甲基胺、2,4,6,-參(二甲基胺基甲基)酚、1,8-二氮雜雙環(5,4,0)-十一烯等,較佳為4-二甲基胺基吡啶、1,8-二氮雜雙環(5,4,0)-十一烯。Examples of the amine-based curing accelerator include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, and 2,4,6- Ginseng (dimethylaminomethyl) phenol, 1,8-diazabicyclo(5,4,0)-undecene, etc., preferably 4-dimethylaminopyridine, 1,8-di Azabicyclo(5,4,0)-undecene.
作為咪唑系硬化促進劑,可列舉例如:2-甲基咪唑、2-十一烷基咪唑、2-十七烷基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰乙基-2-甲基咪唑、1-氰乙基-2-十一烷基咪唑、1-氰乙基-2-乙基-4-甲基咪唑、1-氰乙基-2-苯基咪唑、1-氰乙基-2-十一烷基偏苯三酸咪唑鹽、1-氰乙基-2-苯基偏苯三酸咪唑鹽、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-十一烷基咪唑基-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-乙基-4’-甲基咪唑基-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪異三聚氰酸加成物、2-苯基咪唑異三聚氰酸加成物、2-苯基-4,5-二羥甲基咪唑、2-苯基-4-甲基-5-羥甲基咪唑、2,3-二羥-1H-吡咯[1,2-a]苯并咪唑、1-十二烷基-2-甲基-3-苄基咪唑鹽氯化物、2-甲基咪唑啉、2-苯基咪唑啉等之咪唑化合物及咪唑化合物與環氧樹脂之加合物,較佳為2-乙基-4-甲基咪唑、1-苄基-2-苯基咪唑。Examples of the imidazole-based hardening accelerator include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methyl. Imidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole , 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4 -methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecyl trimellitic acid imidazolium salt, 1-cyanoethyl-2-phenyl trimellitic acid Imidazole salt, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'- Undecylimidazo-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1') ]-Ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine iso-cyanuric acid adduct , 2-phenylimidazolium isocyanurate adduct, 2-phenyl-4,5-dimethylolimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3 -Dihydroxy-1H-pyrrole[1,2-a]benzimidazole, 1-dodecyl-2- An imidazole compound such as methyl-3-benzylimidazolium chloride, 2-methylimidazoline or 2-phenylimidazoline, and an adduct of an imidazole compound and an epoxy resin, preferably 2-ethyl-4 -methylimidazole, 1-benzyl-2-phenylimidazole.
作為咪唑系硬化促進劑,亦可使用市售品,可列舉例如:三菱化學公司製之「P200-H50」等。A commercially available product may be used as the imidazole-based hardening accelerator, and examples thereof include "P200-H50" manufactured by Mitsubishi Chemical Corporation.
作為胍系硬化促進劑,可列舉例如:二氰二胺、1-甲基胍、1-乙基胍、1-環己基胍、1-苯基胍、1-(o-基)胍、二甲基胍、二苯基胍、三甲基胍、四甲基胍、五甲基胍、1,5,7-三氮雜雙環[4.4.0]癸-5-烯、7-甲基-1,5,7-三氮雜雙環[4.4.0]癸-5-烯、1-甲基雙胍、1-乙基雙胍、1-n-丁基雙胍、1-n-十八烷基雙胍、1,1-二甲基雙胍、1,1-二乙基雙胍、1-環己基雙胍、1-烯丙基雙胍、1-苯基雙胍、1-(o-基)雙胍等,較佳為二氰二胺、1,5,7-三氮雜雙環[4.4.0]癸-5-烯。Examples of the oxime-based hardening accelerator include dicyandiamide, 1-methyl hydrazine, 1-ethyl hydrazine, 1-cyclohexyl fluorene, 1-phenyl fluorene, and 1-(o- 胍, dimethyl hydrazine, diphenyl hydrazine, trimethyl hydrazine, tetramethyl hydrazine, pentamethyl hydrazine, 1,5,7-triazabicyclo[4.4.0] fluorene-5-ene, 7-Methyl-1,5,7-triazabicyclo[4.4.0]non-5-ene, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n- Octadecyl biguanide, 1,1-dimethyl biguanide, 1,1-diethyl biguanide, 1-cyclohexyl biguanide, 1-allyl biguanide, 1-phenylbiguanide, 1-(o- The bismuth, etc., is preferably dicyandiamide or 1,5,7-triazabicyclo[4.4.0]non-5-ene.
作為金屬系硬化促進劑,可列舉例如:鈷、銅、鋅、鐵、鎳、錳、錫等之金屬之有機金屬錯合物或有機金屬鹽。作為有機金屬錯合物之具體例,可列舉:乙醯丙酮鈷(II)、乙醯丙酮鈷(III)等之有機鈷錯合物、乙醯丙酮銅(II)等之有機銅錯合物、乙醯丙酮鋅(II)等之有機鋅錯合物、乙醯丙酮鐵(III)等之有機鐵錯合物、乙醯丙酮鎳(II)等之有機鎳錯合物、乙醯丙酮錳(II)等之有機錳錯合物等。作為有機金屬鹽,可列舉例如:辛酸鋅、辛酸錫、環烷酸鋅、環烷酸鈷、硬脂酸錫、硬脂酸鋅等。Examples of the metal-based curing accelerator include organic metal complexes or organic metal salts of metals such as cobalt, copper, zinc, iron, nickel, manganese, and tin. Specific examples of the organic metal complex include an organic cobalt complex such as cobalt (II) acetate, cobalt (III), and copper (II). , an organic zinc complex such as acetonitrile zinc (II), an organic iron complex such as iron(III) acetonate, an organic nickel complex such as acetonitrile acetone (II), or manganese acetylacetonate (II) Organic manganese complexes, etc. Examples of the organic metal salt include zinc octoate, tin octylate, zinc naphthenate, cobalt naphthenate, tin stearate, and zinc stearate.
在使用(F)硬化促進劑的情況,樹脂組成物中之(F)硬化促進劑之量,就顯著得到本發明之所期望的效果之觀點而言,相對於樹脂組成物之樹脂成分100質量%而言,較佳為0.01質量%以上,更佳為0.05質量%以上,再更佳為0.1質量%以上,且較佳為3質量%以下,更佳為2質量%以下,再更佳為1.5質量%以下。In the case where the (F) hardening accelerator is used, the amount of the (F) hardening accelerator in the resin composition is 100% by mass of the resin component with respect to the resin composition from the viewpoint of remarkably obtaining the desired effect of the present invention. % is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, still more preferably 0.1% by mass or more, and is preferably 3% by mass or less, more preferably 2% by mass or less, and still more preferably 1.5% by mass or less.
[8.(G)成分:任意之添加劑] 樹脂組成物係除了上述之成分以外,亦可進一步包含任意之添加劑作為任意成分。作為如此之添加劑,可列舉例如:有機填充材;有機銅化合物、有機鋅化合物及有機鈷化合物等之有機金屬化合物;難燃劑、增黏劑、消泡劑、整平劑、密著性賦予劑、著色劑等之樹脂添加劑等。此等之添加劑係可單獨使用1種,亦可將2種以上組合使用。[8. (G) component: optional additive] The resin composition may further contain any additive as an optional component in addition to the above components. Examples of such an additive include organic fillers; organometallic compounds such as organic copper compounds, organozinc compounds, and organic cobalt compounds; flame retardants, tackifiers, antifoaming agents, leveling agents, and adhesion imparting agents. Resin additives such as agents and colorants. These additives may be used alone or in combination of two or more.
[9.樹脂組成物層之厚度] 樹脂組成物層係以上述之樹脂組成物所形成之層,且具有特定值以下之厚度。樹脂組成物層之具體的厚度,通常為15μm以下,較佳為14μm以下,更佳為12μm以下。以往,印刷配線板之絕緣層形成用的樹脂組成物層之厚度,一般而言較厚。相對於此,本發明者將一般的組成之樹脂組成物層如前述般地減薄的結果,發現於這種薄的樹脂組成物層中,產生暈輪現象之發生,以及通孔的形狀控制之困難化之以往未知的課題。就解決如此之新穎的課題而賦予印刷配線板之薄膜化的觀點而言,本發明之樹脂組成物層係如前述般地設得較薄。樹脂組成物層之厚度的下限為任意,例如可設為1μm以上、3μm以上。[9. Thickness of Resin Composition Layer] The resin composition layer is a layer formed of the above-described resin composition and has a thickness of a specific value or less. The specific thickness of the resin composition layer is usually 15 μm or less, preferably 14 μm or less, and more preferably 12 μm or less. Conventionally, the thickness of the resin composition layer for forming an insulating layer of a printed wiring board is generally thick. On the other hand, the inventors of the present invention found that the resin composition layer of the general composition was thinned as described above, and found in the thin resin composition layer to cause occurrence of a halo phenomenon and shape control of the through hole. The previously unknown subject of difficulty. The resin composition layer of the present invention is thinner as described above from the viewpoint of solving such a novel problem and providing a thin film of a printed wiring board. The lower limit of the thickness of the resin composition layer is arbitrary, and may be, for example, 1 μm or more and 3 μm or more.
[10.樹脂組成物層之特性] 藉由使本發明之樹脂組成物層硬化,而可得到以樹脂組成物層之硬化物所形成之薄的絕緣層。於此絕緣層,可形成良好的形狀之通孔。又,當於此絕緣層形成通孔時,可抑制暈輪現象。以下,針對此等效果,參照附圖進行說明。[10. Characteristics of Resin Composition Layer] By curing the resin composition layer of the present invention, a thin insulating layer formed of a cured product of the resin composition layer can be obtained. In this insulating layer, a through hole of a good shape can be formed. Further, when the through hole is formed in the insulating layer, the halo phenomenon can be suppressed. Hereinafter, the effects will be described with reference to the drawings.
第1圖係示意性顯示使本發明之第一實施形態的樹脂組成物層硬化所得之絕緣層100與內層基板200的剖面圖。於此第1圖中,顯示在通過通孔110之底部120的中心120C且與絕緣層100之厚度方向平行之平面,將絕緣層100切斷的剖面。 如第1圖所示般,本發明之第一實施形態的絕緣層100係使形成於包含導體層210之內層基板200上的樹脂組成物層硬化所得之層,且由前述樹脂組成物層之硬化物所構成。又,於絕緣層100係形成有通孔110。通孔110,一般而言係形成為越接近與導體層210相反側之絕緣層100的面100U直徑越大,且越接近導體層210直徑越小的正錐狀,理想而言係形成為於絕緣層100的厚度方向上具有一定直徑的柱狀。此通孔110,通常是藉由對與導體層210相反側的絕緣層100之面100U照射雷射光,來將絕緣層100的一部分去除,而形成。Fig. 1 is a cross-sectional view schematically showing an insulating layer 100 and an inner layer substrate 200 obtained by curing a resin composition layer according to the first embodiment of the present invention. In the first drawing, a cross section in which the insulating layer 100 is cut is shown on a plane passing through the center 120C of the bottom portion 120 of the through hole 110 and parallel to the thickness direction of the insulating layer 100. As shown in Fig. 1, the insulating layer 100 according to the first embodiment of the present invention is a layer obtained by curing a resin composition layer formed on the inner layer substrate 200 including the conductor layer 210, and the resin composition layer is formed. It consists of a hardened material. Further, a through hole 110 is formed in the insulating layer 100. The through hole 110 is generally formed such that the diameter of the surface 100U of the insulating layer 100 on the side opposite to the conductor layer 210 is larger, and the closer to the diameter of the conductor layer 210, the smaller the tapered shape is formed. The insulating layer 100 has a columnar shape having a certain diameter in the thickness direction. The through hole 110 is usually formed by irradiating a surface 100U of the insulating layer 100 on the opposite side of the conductor layer 210 with a portion of the insulating layer 100 by irradiating the laser light.
將前述之通孔110的導體層210側之底部適當地稱為「孔底」,並以符號120表示。並且,將此孔底120的直徑稱為底徑Lb。又,將形成於通孔110之與導體層210相反側的開口適當地稱為「孔頂」,並以符號130表示。並且,將此孔頂130的直徑稱為頂徑Lt。通常,孔底120及孔頂130從絕緣層100之厚度方向觀看的平面形狀被形成為圓形狀,但,亦可為橢圓形狀。在孔底120及孔頂130之平面形狀為橢圓形狀的情況,該底徑Lb及頂徑Lt分別表示前述之橢圓形狀的長徑。The bottom of the via hole 110 on the side of the conductor layer 210 is appropriately referred to as a "hole bottom" and is denoted by reference numeral 120. Further, the diameter of the hole bottom 120 is referred to as a bottom diameter Lb. Moreover, the opening formed on the opposite side of the via hole 110 from the conductor layer 210 is appropriately referred to as a "hole top" and is denoted by reference numeral 130. Also, the diameter of the hole top 130 is referred to as the top diameter Lt. Usually, the planar shape of the hole bottom 120 and the hole top 130 viewed from the thickness direction of the insulating layer 100 is formed into a circular shape, but may be an elliptical shape. In the case where the planar shape of the hole bottom 120 and the hole top 130 is an elliptical shape, the bottom diameter Lb and the top diameter Lt respectively indicate the long diameter of the elliptical shape described above.
此時,將底徑Lb除以頂徑Lt所得之漸縮比Lb/Lt(%)越接近100%,則該通孔110之形狀越良好。若使用本發明之樹脂組成物層,則可容易地控制通孔110之形狀,因此,可實現漸縮比Lb/Lt接近100%的通孔110。At this time, the closer the taper ratio Lb/Lt (%) obtained by dividing the bottom diameter Lb by the top diameter Lt is closer to 100%, the better the shape of the through hole 110 is. When the resin composition layer of the present invention is used, the shape of the through hole 110 can be easily controlled, and therefore, the through hole 110 having a taper ratio Lb/Lt close to 100% can be realized.
例如,於將樹脂組成物層以100℃進行30分鐘加熱,接著以180℃進行30分鐘加熱使其硬化所得之絕緣層100,以遮罩徑1mm、脈衝寬16μs、能量0.2mJ/射擊,射擊數2、突衝模式(10kHz)的條件,照射CO2 雷射光,來形成頂徑Lt為30μm±2μm之通孔110,於此情況中,可將該通孔110之漸縮比Lb/Lt設為較佳為60%~100%,更佳為70%~100%,特佳為80%~100%。For example, the insulating layer 100 obtained by heating the resin composition layer at 100 ° C for 30 minutes, and then heating at 180 ° C for 30 minutes, has a mask diameter of 1 mm, a pulse width of 16 μs, and an energy of 0.2 mJ/shot. In the case of the number 2, the burst mode (10 kHz), the CO 2 laser light is irradiated to form the via hole 110 having the top diameter Lt of 30 μm ± 2 μm. In this case, the through hole 110 may be tapered by Lb/Lt. It is preferably 60% to 100%, more preferably 70% to 100%, and particularly preferably 80% to 100%.
通孔110之漸縮比Lb/Lt可由通孔110之底徑Lb及頂徑Lt來計算。又,通孔110之底徑Lb及頂徑Lt,係可藉由使用FIB(聚焦離子束),將絕緣層100以使與該絕緣層100之厚度方向平行且通過孔底120之中心120C的剖面顯現的方式削出之後,以電子顯微鏡觀察該剖面而測定。The taper ratio Lb/Lt of the through hole 110 can be calculated from the bottom diameter Lb of the through hole 110 and the top diameter Lt. Moreover, the bottom diameter Lb and the top diameter Lt of the through hole 110 can be made to be parallel to the thickness direction of the insulating layer 100 and pass through the center 120C of the hole bottom 120 by using FIB (Focused Ion Beam). After the shape of the cross section was cut out, the cross section was observed by an electron microscope and measured.
第2圖係示意性顯示使本發明之第一實施形態之樹脂組成物層硬化所得之絕緣層100之與導體層210(於第2圖中未圖示)相反側之面100U的俯視圖。 如第2圖所示般,若觀察形成有通孔110的絕緣層100,則於此通孔110的周圍,觀察到絕緣層100變色後的暈輪部140。此暈輪部140係因通孔110之形成時的暈輪現象所形成者,且通常從通孔110起連續地形成。又,於多數情況中,暈輪部140係成為白化部分。Fig. 2 is a plan view schematically showing a surface 100U of the insulating layer 100 obtained by curing the resin composition layer of the first embodiment of the present invention on the side opposite to the conductor layer 210 (not shown in Fig. 2). As shown in FIG. 2, when the insulating layer 100 in which the through holes 110 are formed is observed, the halo portion 140 in which the insulating layer 100 is discolored is observed around the through holes 110. The halo portion 140 is formed by a halo phenomenon when the through hole 110 is formed, and is generally formed continuously from the through hole 110. Further, in many cases, the halo portion 140 is a whitened portion.
藉由使用本發明之樹脂組成物層,可抑制前述之暈輪現象。因此,可縮小暈輪部140的尺寸,理想而言可使暈輪部140消失。暈輪部140的尺寸,可藉由通孔110之孔頂130的邊緣150起之暈輪距離Wt來評估。By using the resin composition layer of the present invention, the aforementioned halo phenomenon can be suppressed. Therefore, the size of the halo portion 140 can be reduced, and it is desirable that the halo portion 140 can be eliminated. The size of the halo portion 140 can be evaluated by the halo distance Wt from the edge 150 of the aperture top 130 of the through hole 110.
孔頂130的邊緣150係相當於暈輪部140之內周側的緣部。孔頂130的邊緣150起之暈輪距離Wt係表示從孔頂130之邊緣150至暈輪部140之外周側的緣部160為止之距離。孔頂130的邊緣150起之暈輪距離Wt越小,則可評估為可有效抑制暈輪現象。The edge 150 of the hole top 130 corresponds to the edge of the inner peripheral side of the halo portion 140. The halo distance Wt from the edge 150 of the hole top 130 indicates the distance from the edge 150 of the hole top 130 to the edge portion 160 on the outer peripheral side of the halo portion 140. The smaller the halo distance Wt from the edge 150 of the hole top 130, the better the halo phenomenon can be effectively suppressed.
例如,於將樹脂組成物層以100℃進行30分鐘加熱,接著以180℃進行30分鐘加熱使其硬化所得之絕緣層100,以遮罩徑1mm、脈衝寬16μs、能量0.2mJ/射擊,射擊數2、突衝模式(10kHz)的條件,照射CO2 雷射光,來形成頂徑Lt為30μm±2μm之通孔110,於此情況中,可將該孔頂130的邊緣150起之暈輪距離Wt設為較佳為6μm以下,更佳為5μm以下。For example, the insulating layer 100 obtained by heating the resin composition layer at 100 ° C for 30 minutes, and then heating at 180 ° C for 30 minutes, has a mask diameter of 1 mm, a pulse width of 16 μs, and an energy of 0.2 mJ/shot. In the case of the number 2, the burst mode (10 kHz), the CO 2 laser light is irradiated to form a through hole 110 having a top diameter Lt of 30 μm ± 2 μm. In this case, the edge 150 of the hole top 130 can be used as a halo The distance Wt is preferably 6 μm or less, more preferably 5 μm or less.
孔頂130的邊緣150起之暈輪距離Wt可藉由以光學顯微鏡進行的觀察來測定。The halo distance Wt from the edge 150 of the hole top 130 can be determined by observation with an optical microscope.
又,依據本發明者的探討,得知一般有著通孔110之直徑越大,暈輪部140之尺寸容易變大的傾向。因而,可藉由暈輪部140之尺寸相對於通孔110之直徑的比率,來評估暈輪現象之抑制的程度。例如,可藉由相對於通孔110之頂半徑Lt/2之暈輪比Ht而評估。在此,通孔110之頂半徑Lt/2係指通孔110之孔頂130的半徑。又,相對於通孔110之頂半徑Lt/2之暈輪比Ht係指將孔頂130的邊緣150起之暈輪距離Wt除以通孔110之頂半徑Lt/2所得到的比率。相對於通孔110之頂半徑Lt/2之暈輪比Ht越小,則表示可有效地抑制暈輪現象。Further, according to the investigation by the inventors of the present invention, it has been found that the larger the diameter of the through hole 110 is, the larger the size of the halo portion 140 tends to be. Thus, the degree of suppression of the halo phenomenon can be evaluated by the ratio of the size of the halo portion 140 to the diameter of the through hole 110. For example, it can be evaluated by the halo ratio Ht with respect to the top radius Lt/2 of the through hole 110. Here, the top radius Lt/2 of the through hole 110 refers to the radius of the hole top 130 of the through hole 110. Further, the halo ratio Ht with respect to the top radius Lt/2 of the through hole 110 is a ratio obtained by dividing the halo distance Wt from the edge 150 of the hole top 130 by the top radius Lt/2 of the through hole 110. The smaller the halo ratio Ht with respect to the top radius Lt/2 of the through hole 110, the more effectively the halo phenomenon can be suppressed.
例如,於將樹脂組成物層以100℃進行30分鐘加熱,接著以180℃進行30分鐘加熱使其硬化所得之絕緣層100,以遮罩徑1mm、脈衝寬16μs、能量0.2mJ/射擊,射擊數2、突衝模式(10kHz)的條件,照射CO2 雷射光,來形成頂徑Lt為30μm±2μm之通孔110,於此情況中,可將相對於通孔110之孔半徑Lt/2之暈輪比Ht設為較佳為45%以下,更佳為40%以下,再更佳為35%以下。For example, the insulating layer 100 obtained by heating the resin composition layer at 100 ° C for 30 minutes, and then heating at 180 ° C for 30 minutes, has a mask diameter of 1 mm, a pulse width of 16 μs, and an energy of 0.2 mJ/shot. In the case of the number 2, the burst mode (10 kHz), the CO 2 laser light is irradiated to form the via hole 110 having the top diameter Lt of 30 μm ± 2 μm. In this case, the hole radius Lt/2 with respect to the via hole 110 can be obtained. The halo ratio is preferably 45% or less, more preferably 40% or less, still more preferably 35% or less.
相對於通孔110之頂半徑Lt/2之暈輪比Ht係可由通孔110之頂徑Lt,及通孔110之孔頂130的邊緣150起之暈輪距離Wt來計算。The halo ratio Ht with respect to the top radius Lt/2 of the through hole 110 can be calculated from the top diameter Lt of the through hole 110 and the halo distance Wt from the edge 150 of the hole top 130 of the through hole 110.
第3圖係示意性顯示使本發明之第一實施形態的樹脂組成物層硬化所得之粗化處理後的絕緣層100與內層基板200的剖面圖。於此第3圖中,顯示在通過通孔110之孔底120的中心120C且與絕緣層100之厚度方向平行之平面,將絕緣層100切斷的剖面。 如第3圖所示般,若於形成有通孔110的絕緣層100施行粗化處理,則暈輪部140之絕緣層100會從導體層210剝離,而形成從孔底120之邊緣170起連續的間隙部180。此間隙部180,通常是在粗化處理時,暈輪部140被侵蝕而形成。Fig. 3 is a cross-sectional view showing the insulating layer 100 and the inner substrate 200 after the roughening treatment obtained by curing the resin composition layer of the first embodiment of the present invention. In the third drawing, a cross section in which the insulating layer 100 is cut is shown on a plane passing through the center 120C of the hole bottom 120 of the through hole 110 and parallel to the thickness direction of the insulating layer 100. As shown in FIG. 3, if the insulating layer 100 having the via holes 110 is subjected to the roughening treatment, the insulating layer 100 of the halo portion 140 is peeled off from the conductor layer 210, and is formed from the edge 170 of the hole bottom 120. A continuous gap portion 180. This gap portion 180 is usually formed by erosion of the halo portion 140 during the roughening process.
藉由使用本發明之樹脂組成物層,可如前述般地抑制暈輪現象。因此,可縮小暈輪部140的尺寸,理想而言可使暈輪部140消失。因而,由於可抑制從導體層210之絕緣層100的剝離,因此可縮小間隙部180的尺寸。By using the resin composition layer of the present invention, the halo phenomenon can be suppressed as described above. Therefore, the size of the halo portion 140 can be reduced, and it is desirable that the halo portion 140 can be eliminated. Therefore, since the peeling from the insulating layer 100 of the conductor layer 210 can be suppressed, the size of the gap portion 180 can be reduced.
孔底120的邊緣170係相當於間隙部180之內周側的緣部。因而,從孔底120的邊緣170至間隙部180之外周側的端部(亦即,遠離孔底120之中心120C之側的端部)190為止的距離Wb係相當於間隙部180之面內方向的尺寸。在此,面內方向係指與絕緣層100之厚度方向垂直的方向。又,於以下之說明中,有時將前述之距離Wb稱為通孔110之孔底120的邊緣170起之暈輪距離Wb。The edge 170 of the hole bottom 120 corresponds to the edge portion on the inner peripheral side of the gap portion 180. Therefore, the distance Wb from the edge 170 of the hole bottom 120 to the outer peripheral end portion of the gap portion 180 (that is, the end portion away from the center 120C side of the hole bottom 120) 190 corresponds to the in-plane of the gap portion 180. The size of the direction. Here, the in-plane direction means a direction perpendicular to the thickness direction of the insulating layer 100. Further, in the following description, the aforementioned distance Wb may be referred to as a halo distance Wb from the edge 170 of the hole bottom 120 of the through hole 110.
可藉由孔底120的邊緣170起之暈輪距離Wb,而評估間隙部180之形成的抑制程度。具體而言,孔底120的邊緣170起之暈輪距離Wb越小,則可評估為可有效地抑制間隙部180之形成。The degree of suppression of the formation of the gap portion 180 can be evaluated by the halo distance Wb from the edge 170 of the hole bottom 120. Specifically, the smaller the halo distance Wb from the edge 170 of the hole bottom 120, the more it can be evaluated that the formation of the gap portion 180 can be effectively suppressed.
又,間隙部180係暈輪部140之絕緣層100剝離所形成者,因此,其尺寸與暈輪現象140的尺寸有關。因而,孔底120的邊緣170起之暈輪距離Wb越小,則可評估為可有效地抑制暈輪現象。Further, since the gap portion 180 is formed by peeling off the insulating layer 100 of the halo portion 140, the size thereof is related to the size of the halo phenomenon 140. Thus, the smaller the halo distance Wb from the edge 170 of the hole bottom 120, the more it can be evaluated that the halo phenomenon can be effectively suppressed.
例如,於將樹脂組成物層以100℃進行30分鐘加熱,接著以180℃進行30分鐘加熱使其硬化所得之絕緣層100,以遮罩徑1mm、脈衝寬16μs、能量0.2mJ/射擊,射擊數2、突衝模式(10kHz)的條件,照射CO2 雷射光,來形成頂徑Lt為30μm±2μm之通孔110。其後,於膨潤液中以60℃浸漬10分鐘,接著,於氧化劑溶液中以80℃浸漬20分鐘,接著,於中和液中以40℃浸漬5分鐘之後,以80℃進行15分鐘乾燥。在施行了如此之粗化處理的情況,可將孔底120的邊緣170起之暈輪距離Wb設為較佳為60μm以下,更佳為50μm以下,特佳為40μm以下。For example, the insulating layer 100 obtained by heating the resin composition layer at 100 ° C for 30 minutes, and then heating at 180 ° C for 30 minutes, has a mask diameter of 1 mm, a pulse width of 16 μs, and an energy of 0.2 mJ/shot. In the case of the number 2 and the burst mode (10 kHz), the CO 2 laser light was irradiated to form the via hole 110 having the top diameter Lt of 30 μm ± 2 μm. Thereafter, the mixture was immersed in a swelling solution at 60 ° C for 10 minutes, and then immersed in an oxidizing agent solution at 80 ° C for 20 minutes, followed by immersion in a neutralizing solution at 40 ° C for 5 minutes, followed by drying at 80 ° C for 15 minutes. In the case where such a roughening treatment is performed, the halo distance Wb from the edge 170 of the hole bottom 120 is preferably 60 μm or less, more preferably 50 μm or less, and particularly preferably 40 μm or less.
孔底120的邊緣170起之暈輪距離Wb,可藉由使用FIB(聚焦離子束),將絕緣層100以使與該絕緣層100之厚度方向平行且通過孔底120之中心120C的剖面顯現的方式削出之後,以電子顯微鏡觀察該剖面而測定。The edge 170 of the hole bottom 120 serves as a halo distance Wb, and the insulating layer 100 can be made parallel to the thickness direction of the insulating layer 100 and through the cross section of the center 120C of the hole bottom 120 by using FIB (Focused Ion Beam). After the method of cutting, the cross section was observed by an electron microscope and measured.
進而,依據本發明者的探討,得知一般有著由於通孔110之直徑越大,暈輪部140之尺寸容易變大,因此,間隙部180之尺寸也容易變大的傾向。因而,藉由間隙部180之尺寸相對於通孔110之直徑的比率,可評估暈輪現象之抑制的程度,甚至可評估間隙部180之形成的抑制程度。例如,可藉由相對於通孔110之底半徑Lb/2之暈輪比Hb來評估。在此,通孔110之底半徑Lb/2係指通孔110之孔底120的半徑。又,相對於通孔110之底半徑Lb/2之暈輪比Hb係指將孔底120的邊緣170起之暈輪距離Wb除以通孔110之底半徑Lt/2所得到的比率。相對於通孔110之底半徑Lb/2之暈輪比Hb越小,則表示可有效地抑制間隙部180之形成。Further, according to the investigation by the inventors of the present invention, it has been found that the larger the diameter of the through hole 110 is, the larger the size of the halo portion 140 is. Therefore, the size of the gap portion 180 tends to be large. Thus, by the ratio of the size of the gap portion 180 to the diameter of the through hole 110, the degree of suppression of the halo phenomenon can be evaluated, and even the degree of suppression of the formation of the gap portion 180 can be evaluated. For example, it can be evaluated by the halo ratio Hb with respect to the bottom radius Lb/2 of the through hole 110. Here, the bottom radius Lb/2 of the through hole 110 refers to the radius of the hole bottom 120 of the through hole 110. Further, the halo ratio Hb with respect to the bottom radius Lb/2 of the through hole 110 is a ratio obtained by dividing the halo distance Wb from the edge 170 of the hole bottom 120 by the bottom radius Lt/2 of the through hole 110. The smaller the halo ratio Hb with respect to the bottom radius Lb/2 of the through hole 110, the more effectively the formation of the gap portion 180 can be suppressed.
例如,於將樹脂組成物層以100℃進行30分鐘加熱,接著以180℃進行30分鐘加熱使其硬化所得之絕緣層100,以遮罩徑1mm、脈衝寬16μs、能量0.2mJ/射擊,射擊數2、突衝模式(10kHz)的條件,照射CO2 雷射光,來形成頂徑Lt為30μm±2μm之通孔110。其後,於膨潤液中以60℃浸漬10分鐘,接著,於氧化劑溶液中以80℃浸漬20分鐘,接著,於中和液中以40℃浸漬5分鐘之後,以80℃進行15分鐘乾燥。在施行了如此之粗化處理的情況,可將相對於通孔110之底半徑Lb/2之暈輪比Hb設為較佳為60%以下,更佳為50%以下,再更佳為40%以下。For example, the insulating layer 100 obtained by heating the resin composition layer at 100 ° C for 30 minutes, and then heating at 180 ° C for 30 minutes, has a mask diameter of 1 mm, a pulse width of 16 μs, and an energy of 0.2 mJ/shot. In the case of the number 2 and the burst mode (10 kHz), the CO 2 laser light was irradiated to form the via hole 110 having the top diameter Lt of 30 μm ± 2 μm. Thereafter, the mixture was immersed in a swelling solution at 60 ° C for 10 minutes, and then immersed in an oxidizing agent solution at 80 ° C for 20 minutes, followed by immersion in a neutralizing solution at 40 ° C for 5 minutes, followed by drying at 80 ° C for 15 minutes. In the case where such a roughening treatment is performed, the halo ratio Hb with respect to the bottom radius Lb/2 of the through hole 110 can be preferably 60% or less, more preferably 50% or less, and still more preferably 40. %the following.
相對於通孔110之底半徑Lb/2之暈輪比Hb係可由通孔110之底徑Lb,及通孔110之孔底120的邊緣170起之暈輪距離Wb來計算。The halo ratio Hb with respect to the bottom radius Lb/2 of the through hole 110 can be calculated from the bottom diameter Lb of the through hole 110 and the halo distance Wb from the edge 170 of the hole bottom 120 of the through hole 110.
於印刷配線板之製造過程中,通孔110,通常是在於與導體層210相反側的絕緣層100之面100U未設置其他導體層(未圖示)的狀態下形成。因此,若知道印刷配線板之製造過程,則可明確地認識於導體層210側有孔底120,且於與導體層210相反側孔頂130有開口的構造。但,於已完成的印刷配線板中,可能會有於絕緣層100的兩側設置導體層的情況。於此情況中,因與導體層之位置關係而有可能難以區別孔底120與孔頂130。但,通常孔頂130之頂徑Lt會大於孔底120之底徑Lb。因而,於前述之情況中,可藉由直徑大小來區別孔底120與孔頂130。In the manufacturing process of the printed wiring board, the through hole 110 is usually formed in a state in which the surface 100U of the insulating layer 100 on the opposite side of the conductor layer 210 is not provided with another conductor layer (not shown). Therefore, when the manufacturing process of the printed wiring board is known, it is possible to clearly recognize that the hole bottom 120 is on the side of the conductor layer 210 and that the hole top 130 has an opening on the side opposite to the conductor layer 210. However, in the completed printed wiring board, there may be a case where a conductor layer is provided on both sides of the insulating layer 100. In this case, it may be difficult to distinguish the hole bottom 120 from the hole top 130 due to the positional relationship with the conductor layer. However, generally, the top diameter Lt of the hole top 130 is greater than the bottom diameter Lb of the hole bottom 120. Thus, in the foregoing case, the hole bottom 120 and the hole top 130 can be distinguished by the diameter.
本發明者係如下述般地推測藉由本發明之樹脂組成物層可得到如前述般之效果的構造。但,本發明之技術性範圍並不因下述所說明的構造所限制。The inventors of the present invention estimated the structure obtained by the resin composition layer of the present invention as described above. However, the technical scope of the present invention is not limited by the configuration described below.
通常,在形成通孔110時,對想要形成絕緣層100之通孔110的部分給予熱、光等之能量。此時所賦予的能量的一部分有可能會傳遞至想要形成通孔110的部分之周圍,而產生樹脂之氧化。若如此之氧化產生,則樹脂會劣化,而作為暈輪現象顯現。但,由於(B)成分為具有具有2個以上羥基之芳香環,因此藉由前述羥基之立體阻礙作用,而可抑制樹脂之氧化反應的進行。因此,於使用本發明之樹脂組成物層所得到的絕緣層100中,可抑制暈輪現象。Generally, when the via hole 110 is formed, heat, light, or the like is applied to a portion of the via hole 110 where the insulating layer 100 is to be formed. A part of the energy imparted at this time may be transmitted to the periphery of the portion where the through hole 110 is to be formed, resulting in oxidation of the resin. If such oxidation occurs, the resin deteriorates and appears as a halo phenomenon. However, since the component (B) has an aromatic ring having two or more hydroxyl groups, the oxidative reaction of the resin can be suppressed by the steric hindrance of the hydroxyl group. Therefore, in the insulating layer 100 obtained by using the resin composition layer of the present invention, the halo phenomenon can be suppressed.
又,如由平均粒徑及比表面積之說明所得知般地,樹脂組成物層中所包含之(C)成分的粒徑通常是小的。由於(C)成分之粒徑小,因此對絕緣層100賦予之能量可良好地傳遞至絕緣層100的厚度方向。例如,若對絕緣層100之面100U賦予熱能量或光能量,則該能量係可不產生大幅衰減地傳遞至厚度方向。因此,可容易形成漸縮比大的通孔110,因此,可使該通孔110的形狀成為良好。Further, as is known from the description of the average particle diameter and the specific surface area, the particle diameter of the component (C) contained in the resin composition layer is usually small. Since the particle diameter of the component (C) is small, the energy applied to the insulating layer 100 can be favorably transmitted to the thickness direction of the insulating layer 100. For example, when thermal energy or light energy is applied to the surface 100U of the insulating layer 100, the energy can be transmitted to the thickness direction without significant attenuation. Therefore, the through hole 110 having a large taper ratio can be easily formed, and therefore, the shape of the through hole 110 can be made good.
[11.樹脂組成物層之用途] 本發明之樹脂組成物層可適合使用作為絕緣用途之樹脂組成物層。具體而言,本發明之樹脂組成物層可適合使用作為用以形成印刷配線板之絕緣層的樹脂組成物層(印刷配線板之絕緣層形成用之樹脂組成物層),進而,可更適合使用作為用以形成印刷配線板之層間絕緣層的樹脂組成物層(印刷配線板之層間絕緣層形成用之樹脂組成物層)。又,本發明之樹脂組成物層可適合使用作為用以於絕緣層上形成導體層(包含再配線層)之用以形成該絕緣層的樹脂組成物層(用以形成導體層之絕緣層形成用樹脂組成物層)。[11. Use of Resin Composition Layer] The resin composition layer of the present invention can be suitably used as a resin composition layer for insulation use. Specifically, the resin composition layer of the present invention can be suitably used as a resin composition layer (resin composition layer for forming an insulating layer of a printed wiring board) for forming an insulating layer of a printed wiring board, and further, it can be more suitably used. A resin composition layer (a resin composition layer for forming an interlayer insulating layer of a printed wiring board) to form an interlayer insulating layer of a printed wiring board is used. Further, the resin composition layer of the present invention can be suitably used as a resin composition layer for forming a conductive layer (including a rewiring layer) for forming the insulating layer (an insulating layer for forming a conductor layer) A resin composition layer).
尤其,就有效地活用可抑制暈輪現象,且可形成良好的形狀之通孔的優點之觀點而言,前述之樹脂組成物層適合作為用以形成具有通孔之絕緣層的樹脂組成物層(具有通孔之絕緣層形成用之樹脂組成物層),其中,特別適合作為具有頂徑35μm以下之通孔的絕緣層形成用之樹脂組成物層。In particular, the resin composition layer is suitable as a resin composition layer for forming an insulating layer having a through hole, from the viewpoint of effectively utilizing the advantage of suppressing the halo phenomenon and forming a good shape of the through hole. (Resin composition layer for forming an insulating layer having a through hole), and particularly suitable as a resin composition layer for forming an insulating layer having a through hole having a top diameter of 35 μm or less.
[12.樹脂薄片] 本發明之樹脂薄片係包含支撐體,與設置於該支撐體上之本發明之樹脂組成物層。[12. Resin sheet] The resin sheet of the present invention comprises a support and a resin composition layer of the present invention provided on the support.
作為支撐體,可列舉例如:由塑膠材料所構成之薄膜、金屬箔、脫模紙,較佳為由塑膠材料所構成之薄膜、金屬箔。Examples of the support include a film made of a plastic material, a metal foil, and a release paper, and a film made of a plastic material or a metal foil is preferable.
在使用由塑膠材料所構成之薄膜作為支撐體的情況,作為塑膠材料,可列舉例如:聚對苯二甲酸乙二酯(以下有時簡稱為「PET」)、聚萘二甲酸乙二酯(以下有時簡稱為「PEN」)等之聚酯、聚碳酸酯(以下有時簡稱為「PC」)、聚甲基丙烯酸甲酯(以下有時簡稱為「PMMA」)等之丙烯酸聚合物、環狀聚烯烴、三乙醯纖維素(以下有時簡稱為「TAC」)、聚醚硫化物(以下有時簡稱為「PES」)、聚醚酮、聚醯亞胺等。其中,較佳為聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯,特佳為低價的聚對苯二甲酸乙二酯。In the case of using a film made of a plastic material as a support, examples of the plastic material include polyethylene terephthalate (hereinafter sometimes abbreviated as "PET") and polyethylene naphthalate ( Hereinafter, an acrylic polymer such as polyester, polycarbonate (hereinafter sometimes abbreviated as "PC") or polymethyl methacrylate (hereinafter sometimes abbreviated as "PMMA") may be simply referred to as "PEN" or the like. Cyclic polyolefin, triacetyl cellulose (hereinafter sometimes abbreviated as "TAC"), polyether sulfide (hereinafter sometimes abbreviated as "PES"), polyether ketone, polyimine, and the like. Among them, polyethylene terephthalate or polyethylene naphthalate is preferred, and polyethylene terephthalate which is preferably low in weight is preferred.
在使用金屬箔作為支撐體的情況,作為金屬箔,可列舉例如:銅箔、鋁箔等,較佳為銅箔。作為銅箔,可使用由銅之單金屬所構成的箔,亦可使用由銅與其他金屬(例如,錫、鉻、銀、鎂、鎳、鋯、矽、鈦等)之合金所構成的箔。In the case of using a metal foil as a support, examples of the metal foil include a copper foil, an aluminum foil, and the like, and a copper foil is preferable. As the copper foil, a foil composed of a single metal of copper may be used, or a foil composed of an alloy of copper and another metal (for example, tin, chromium, silver, magnesium, nickel, zirconium, hafnium, titanium, etc.) may be used. .
支撐體,亦可於與樹脂組成物層接合的面施行霧面處理、電暈處理、抗靜電處理等之處理。The support may be subjected to a matte treatment, a corona treatment, an antistatic treatment or the like on the surface joined to the resin composition layer.
又、作為支撐體,亦可使用於與樹脂組成物層接合之面具有脫模層之附脫模層支撐體。作為使用於附脫模層支撐體之脫模層的脫模劑,可列舉例如:選自由醇酸樹脂、聚烯烴樹脂、胺基甲酸酯樹脂、及聚矽氧樹脂所成之群中的1種以上之脫模劑。附脫模層支撐體亦可使用市售品,可列舉例如:作為具有以醇酸樹脂系脫模劑作為主成分之脫模層的PET薄膜之LINTEC公司製之「SK-1」、「AL-5」、「AL-7」;Toray公司製之「LUMIRROR T60」;帝人公司製之「PUREX」;Unitika公司製之「Unipeel」等。Further, as the support, a release layer support having a release layer on the surface joined to the resin composition layer may be used. The release agent used for the release layer to which the release layer support is attached may, for example, be selected from the group consisting of an alkyd resin, a polyolefin resin, a urethane resin, and a polyoxymethylene resin. One or more release agents. A commercially available product may be used as the release layer support, and for example, "SK-1" and "AL" manufactured by LINTEC Co., Ltd., which is a PET film having a release layer containing an alkyd-based release agent as a main component, may be used. -5", "AL-7"; "LUMIRROR T60" manufactured by Toray Co., Ltd.; "PUREX" manufactured by Teijin Co., Ltd.; "Unipeel" manufactured by Unitika Corporation.
作為支撐體之厚度雖無特別限定,但較佳為5μm~75μm之範圍,更佳為10μm~60μm之範圍。另外,在使用附脫模層支撐體的情況,較佳係附脫模層支撐體全體的厚度為上述範圍。The thickness of the support is not particularly limited, but is preferably in the range of 5 μm to 75 μm, and more preferably in the range of 10 μm to 60 μm. Further, in the case where the release layer support is used, the thickness of the entire release layer support is preferably in the above range.
又,樹脂薄片亦可因應需要而包含支撐體及樹脂組成物層以外之任意之層。作為該任意之層,可列舉例如:設置於樹脂組成物層之不與支撐體接合之面(亦即,與支撐體相反側之面)之作為支撐體的保護薄膜等。保護薄膜之厚度雖無特別限定,但例如為1μm~40μm。藉由保護薄膜,可抑制對樹脂組成物層之表面的塵埃等之附著或損傷。Further, the resin sheet may contain any layer other than the support and the resin composition layer as needed. For example, a protective film or the like which is provided as a support on the surface of the resin composition layer which is not bonded to the support (that is, the surface opposite to the support) may be mentioned. The thickness of the protective film is not particularly limited, but is, for example, 1 μm to 40 μm. By protecting the film, adhesion or damage to dust or the like on the surface of the resin composition layer can be suppressed.
樹脂薄片,例如,可藉由調製包含有機溶劑及樹脂組成物之樹脂清漆,並將此樹脂清漆,使用模具塗佈機等之塗佈裝置來塗佈於支撐體上,再使其乾燥形成樹脂組成物層,而製造。For the resin sheet, for example, a resin varnish containing an organic solvent and a resin composition can be prepared, and the resin varnish can be applied to a support by a coating device such as a die coater, and then dried to form a resin. The composition layer is made and manufactured.
作為有機溶劑,可列舉例如:丙酮、甲基乙基酮及環己酮等之酮溶劑;乙酸乙酯、乙酸丁酯、賽路蘇乙酸酯、丙二醇單甲基醚乙酸酯及卡必醇乙酸酯等之乙酸酯溶劑;賽路蘇及丁基卡必醇等之卡必醇溶劑;甲苯及二甲苯等之芳香族烴溶劑;二甲基甲醯胺、二甲基乙醯胺(DMAc)、N-甲基吡咯啶酮等之醯胺系溶劑等。有機溶劑係可1種單獨使用,亦可將2種以上組合使用。Examples of the organic solvent include ketone solvents such as acetone, methyl ethyl ketone, and cyclohexanone; ethyl acetate, butyl acetate, 赛 succinate, propylene glycol monomethyl ether acetate, and carbene. Acetate solvent such as alcohol acetate; carbitol solvent such as serosol and butyl carbitol; aromatic hydrocarbon solvent such as toluene and xylene; dimethylformamide, dimethylacetamidine A guanamine-based solvent such as an amine (DMAc) or N-methylpyrrolidone. The organic solvent may be used alone or in combination of two or more.
乾燥係可藉由加熱、熱風吹附等之方法而實施。乾燥條件雖無特別限定,但以使樹脂組成物層中之有機溶劑的含量成為通常10質量%以下,較佳為5質量%以下的方式來進行乾燥。雖依樹脂清漆中之有機溶劑的沸點而異,但例如,在使用包含30質量%~60質量%之有機溶劑的樹脂清漆的情況,可藉由以50℃~150℃進行3分鐘~10分鐘乾燥,而形成樹脂組成物層。The drying can be carried out by heating, hot air blowing, or the like. The drying condition is not particularly limited, but the content of the organic solvent in the resin composition layer is usually 10% by mass or less, preferably 5% by mass or less. Although it varies depending on the boiling point of the organic solvent in the resin varnish, for example, when a resin varnish containing 30% by mass to 60% by mass of an organic solvent is used, it can be carried out at 50 ° C to 150 ° C for 3 minutes to 10 minutes. It is dried to form a resin composition layer.
樹脂薄片係可藉由捲成捲狀來保存。在樹脂薄片具有保護薄膜的情況,通常藉由將保護薄膜剝離而成為可使用狀態。The resin sheet can be stored by winding into a roll. In the case where the resin sheet has a protective film, it is usually in a usable state by peeling off the protective film.
[13.印刷配線板] 本發明之印刷配線板係具備以如上述般薄的樹脂組成物層之硬化物所形成的絕緣層。又,此絕緣層,在形成通孔時可抑制暈輪現象,且可形成良好的形狀之通孔。因而,藉由使用本發明之樹脂組成物層,可一邊抑制因暈輪現象或通孔之形狀的惡化導致之性能的降低,一邊達成印刷配線板之薄型化。[13. Printed wiring board] The printed wiring board of the present invention is provided with an insulating layer formed of a cured product of a resin composition layer as described above. Further, the insulating layer can suppress the halo phenomenon when the through hole is formed, and can form a through hole having a good shape. Therefore, by using the resin composition layer of the present invention, the thickness of the printed wiring board can be reduced while suppressing the deterioration of the performance due to the halo phenomenon or the deterioration of the shape of the through hole.
通孔,通常是為了使設置於具有該通孔之絕緣層的兩側之導體層導通而設置。因而,本發明之印刷配線板,通常包含第1導體層、第2導體層、以及形成於第1導體層與第2導體層之間的絕緣層。並且,於絕緣層形成通孔,而可通過該通孔來將第1導體層與第2導體層導通。The through holes are usually provided to electrically connect the conductor layers provided on both sides of the insulating layer having the through holes. Therefore, the printed wiring board of the present invention usually includes a first conductor layer, a second conductor layer, and an insulating layer formed between the first conductor layer and the second conductor layer. Further, a through hole is formed in the insulating layer, and the first conductor layer and the second conductor layer can be electrically connected through the through hole.
藉由活用可抑制暈輪現象,且可形成良好的形狀之通孔之樹脂組成物層的優點,而可實現以往所難以實現之特定印刷配線板。此特定印刷配線板係包含第1導體層、第2導體層、及形成於第1導體層第2導體之間的絕緣層之印刷配線板,且滿足下述之全部要件(i)~(v)。 (i)絕緣層之厚度為15μm以下。 (ii)絕緣層具有頂徑35μm以下的通孔。 (iii)該通孔之漸縮比為80%以上。 (iv)該通孔之孔底的邊緣起之暈輪距離為5μm以下。 (v)相對於該通孔之底部半徑之暈輪比為35%以下。By utilizing the advantage of the resin composition layer which can suppress the halo phenomenon and form a through hole of a good shape, it is possible to realize a specific printed wiring board which has been difficult to realize in the past. This specific printed wiring board includes a printed wiring board including a first conductor layer, a second conductor layer, and an insulating layer formed between the second conductors of the first conductor layer, and satisfies all of the following requirements (i) to (v). ). (i) The thickness of the insulating layer is 15 μm or less. (ii) The insulating layer has a through hole having a top diameter of 35 μm or less. (iii) The through hole has a taper ratio of 80% or more. (iv) The edge of the hole bottom of the through hole has a halo distance of 5 μm or less. (v) The halo ratio with respect to the bottom radius of the through hole is 35% or less.
以下,顯示附圖,針對特定印刷配線板進行說明。第4圖係本發明之第二實施形態的印刷配線板300的示意剖面圖。於此第4圖中,顯示在通過通孔110之孔底120的中心120C且與絕緣層100之厚度方向平行之平面,將印刷配線板300切斷的剖面。又,於第4圖中,相當於第1圖~第3圖所記載之要素的部位係標示與第1圖~第3圖所使用者相同的符號。Hereinafter, the drawings will be described, and a specific printed wiring board will be described. Fig. 4 is a schematic cross-sectional view showing a printed wiring board 300 according to a second embodiment of the present invention. In the fourth drawing, a cross section in which the printed wiring board 300 is cut is shown on a plane passing through the center 120C of the hole bottom 120 of the through hole 110 and parallel to the thickness direction of the insulating layer 100. Further, in the fourth drawing, the parts corresponding to the elements described in the first to third figures are denoted by the same reference numerals as those of the first to third figures.
如第4圖所示般,本發明之第二實施形態的特定印刷配線板300,包含第1導體層210、第2導體層220、以及形成於第1導體層210與第2導體層220之間的絕緣層100。於絕緣層100係形成有通孔110。又,通常,第2導體層220係在形成有通孔110之後設置者。因而,第2導體層220,通常不僅形成於絕緣層100之面100U,也形成於通孔110內,通過此通孔110來導通第1導體層210與第2導體層220。As shown in FIG. 4, the specific printed wiring board 300 according to the second embodiment of the present invention includes the first conductor layer 210, the second conductor layer 220, and the first conductor layer 210 and the second conductor layer 220. Inter-insulating layer 100. A through hole 110 is formed in the insulating layer 100. Further, in general, the second conductor layer 220 is provided after the through holes 110 are formed. Therefore, the second conductor layer 220 is formed not only on the surface 100U of the insulating layer 100 but also in the via hole 110, and the first conductor layer 210 and the second conductor layer 220 are electrically connected through the via hole 110.
特定印刷配線板300所包含之絕緣層100的厚度T,通常為15μm以下,較佳為12μm以下,更佳為10μm以下,特佳為5μm以下。由於特定印刷配線板300具有如此薄的絕緣層100,因此,可達成特定印刷配線板300自體之薄型化。絕緣層100之厚度T的下限,就提高絕緣層100之絕緣性能的觀點而言,較佳為1μm以上,更佳為2μm以上,特佳為3μm以上。在此,絕緣層100之厚度T表示第1導體層210與第2導體層220之間的絕緣層100之尺寸,並非表示在無第1導體層210或第2導體層220的位置之絕緣層100之尺寸。絕緣層100之厚度T,通常與隔著該絕緣層100相對向之第1導體層210的主面210U與第2導體層220的主面220D之間的距離一致,且與通孔110的深度一致。The thickness T of the insulating layer 100 included in the specific printed wiring board 300 is usually 15 μm or less, preferably 12 μm or less, more preferably 10 μm or less, and particularly preferably 5 μm or less. Since the specific printed wiring board 300 has such a thin insulating layer 100, the specific printed wiring board 300 can be made thinner by itself. The lower limit of the thickness T of the insulating layer 100 is preferably 1 μm or more, more preferably 2 μm or more, and particularly preferably 3 μm or more from the viewpoint of improving the insulating properties of the insulating layer 100. Here, the thickness T of the insulating layer 100 indicates the size of the insulating layer 100 between the first conductor layer 210 and the second conductor layer 220, and does not indicate the insulating layer at the position where the first conductor layer 210 or the second conductor layer 220 is absent. 100 size. The thickness T of the insulating layer 100 generally coincides with the distance between the main surface 210U of the first conductor layer 210 and the main surface 220D of the second conductor layer 220 facing the insulating layer 100, and the depth of the through hole 110. Consistent.
特定印刷配線板300所包含之絕緣層100所具有之通孔110的頂徑Lt,通常為35μm以下,較佳為33μm以下,特佳為32μm以下。特定印刷配線板300由於包含如此般具有頂徑Lt小的通孔110之絕緣層100,因此可促進包含第1導體層210及第2導體層220之配線的微細化。通孔110之頂徑Lt的下限,就容易進行通孔110之形成的觀點而言,較佳為3μm以上,更佳為10μm以上,特佳為15μm以上。The top diameter Lt of the through hole 110 included in the insulating layer 100 included in the specific printed wiring board 300 is usually 35 μm or less, preferably 33 μm or less, and particularly preferably 32 μm or less. Since the specific printed wiring board 300 includes the insulating layer 100 having the through holes 110 having a small top diameter Lt as described above, it is possible to promote the miniaturization of the wiring including the first conductor layer 210 and the second conductor layer 220. The lower limit of the top diameter Lt of the through hole 110 is preferably 3 μm or more, more preferably 10 μm or more, and particularly preferably 15 μm or more from the viewpoint of facilitating the formation of the through hole 110.
特定印刷配線板300所包含之絕緣層100所具有之通孔110的漸縮比Lb/Lt(%),通常為80%~100%。特定印刷配線板300係包含如此般具有漸縮比Lb/Lt高之良好的形狀之通孔110的絕緣層100者。因而,特定印刷配線板300,通常可提高第1導體層210與第2導體層220之間的導通之可靠性。The taper ratio Lb/Lt (%) of the through hole 110 included in the insulating layer 100 included in the specific printed wiring board 300 is usually 80% to 100%. The specific printed wiring board 300 is an insulating layer 100 including the through holes 110 having a good shape with a tapered ratio Lb/Lt. Therefore, the specific printed wiring board 300 can generally improve the reliability of conduction between the first conductor layer 210 and the second conductor layer 220.
特定印刷配線板300所包含之絕緣層100所具有之通孔110的孔底120的邊緣170起之暈輪距離Wb,通常為5μm以下,較佳為4μm以下。特定印刷配線板300係孔底120的邊緣170起之暈輪距離Wb如此小,因而,從第1導體層210之絕緣層100的剝離為小。因而,特定印刷配線板300,通常可提高第1導體層210與第2導體層220之間的導通之可靠性。The edge 170 of the hole bottom 120 of the through hole 110 included in the insulating layer 100 included in the specific printed wiring board 300 has a halo distance Wb of usually 5 μm or less, preferably 4 μm or less. Since the edge 170 of the specific printed wiring board 300 by the hole bottom 120 has such a small halo distance Wb, the peeling from the insulating layer 100 of the first conductor layer 210 is small. Therefore, the specific printed wiring board 300 can generally improve the reliability of conduction between the first conductor layer 210 and the second conductor layer 220.
特定印刷配線板300所包含之絕緣層100所具有的相對於通孔110之底部半徑Lb/2之暈輪比Hb,通常為35%以下,較佳為33%以下,更佳為31%以下。特定印刷配線板300係相對於底部半徑Lb/2之暈輪比Hb如此小,因而,從第1導體層210之絕緣層100的剝離為小。包含如此般暈輪比Hb為小的絕緣層100之特定印刷配線板300,通常可提高第1導體層210與第2導體層220之間的導通之可靠性。相對於底部半徑Lb/2之暈輪比Hb的下限,理想而言為零,但,通常為5%以上。The halo ratio Hb of the insulating layer 100 included in the specific printed wiring board 300 with respect to the bottom radius Lb/2 of the through hole 110 is usually 35% or less, preferably 33% or less, more preferably 31% or less. . Since the specific printed wiring board 300 is so small in the halo ratio Hb with respect to the bottom radius Lb/2, the peeling from the insulating layer 100 of the first conductor layer 210 is small. The specific printed wiring board 300 including the insulating layer 100 having a smaller halo than Hb generally improves the reliability of conduction between the first conductor layer 210 and the second conductor layer 220. The lower limit of the halo ratio Hb with respect to the bottom radius Lb/2 is desirably zero, but is usually 5% or more.
特定印刷配線板300所包含之絕緣層100所具有之通孔110的數量,可為1個,亦可為2個以上。在絕緣層100具有2個以上之通孔110的情況,雖其一部分滿足要件(ii)~(v)亦可,但較佳係其全部滿足要件(ii)~(v)。又,例如,較佳係由絕緣層100隨機地選出的5個部位之通孔110平均滿足要件(ii)~(v)。The number of the through holes 110 included in the insulating layer 100 included in the specific printed wiring board 300 may be one or two or more. In the case where the insulating layer 100 has two or more through holes 110, some of them may satisfy the requirements (ii) to (v), but preferably all of them satisfy the requirements (ii) to (v). Further, for example, it is preferable that the through holes 110 of the five portions randomly selected by the insulating layer 100 satisfy the requirements (ii) to (v) on average.
上述之特定印刷配線板300係可藉由本發明之樹脂組成物層的硬化物來形成絕緣層100而實現。此時,形成於絕緣層100之通孔110的孔底120及孔頂130的平面形狀雖為任意,但通常是圓形狀或橢圓形狀,較佳為圓形狀。The specific printed wiring board 300 described above can be realized by forming the insulating layer 100 by the cured product of the resin composition layer of the present invention. At this time, although the planar shape of the hole bottom 120 and the hole top 130 formed in the through hole 110 of the insulating layer 100 is arbitrary, it is generally a circular shape or an elliptical shape, and is preferably a circular shape.
特定印刷配線板等之印刷配線板,例如,可藉由使用樹脂薄片,來進行包含下述之步驟(I)~步驟(III)的製造方法而製造。 (I)於內層基板上,以使樹脂組成物層與內層基板接合的方式,來層合樹脂薄片的步驟。 (II)將樹脂組成物層進行熱硬化,而形成絕緣層的步驟。 (III)於絕緣層形成通孔的步驟。A printed wiring board such as a specific printed wiring board can be produced, for example, by using a resin sheet to carry out the production method including the following steps (I) to (III). (I) A step of laminating a resin sheet on the inner substrate so that the resin composition layer and the inner layer substrate are joined to each other. (II) a step of thermally curing the resin composition layer to form an insulating layer. (III) a step of forming a via hole in the insulating layer.
步驟(I)所使用之「內層基板」係指成為印刷配線板之基板的構件。作為內層基板,可列舉例如:玻璃環氧基板、金屬基板、聚酯基板、聚醯亞胺基板、BT樹脂基板、熱硬化型聚苯醚基板等。通常,作為內層基板係使用於其單面或兩面具有導體層者。接著,於此導體層上形成絕緣層。此導體層,例如,亦可為了發揮作為電路的功能,而進行圖型加工。於基板之單面或兩面作為電路而形成有導體層的內層基板,有時稱為「內層電路基板」。又,在製造印刷配線板時,為了進一步形成絕緣層及/或導體層之中間製造物亦包含於「內層基板」。在印刷配線板為內裝零件之電路基板的情況,亦可使用內裝有零件的內層基板。The "inner substrate" used in the step (I) means a member that becomes a substrate of the printed wiring board. Examples of the inner layer substrate include a glass epoxy substrate, a metal substrate, a polyester substrate, a polyimide substrate, a BT resin substrate, and a thermosetting polyphenylene ether substrate. Usually, the inner layer substrate is used for a conductor layer having one or both sides. Next, an insulating layer is formed on the conductor layer. This conductor layer can be patterned, for example, in order to function as a circuit. An inner layer substrate in which a conductor layer is formed as a circuit on one side or both sides of a substrate may be referred to as an "inner layer circuit board". Further, in the production of a printed wiring board, an intermediate product for further forming an insulating layer and/or a conductor layer is also included in the "inner substrate". In the case where the printed wiring board is a circuit board in which the components are built, an inner substrate in which the components are mounted may be used.
內層基板與樹脂薄片之層合,例如,可藉由將樹脂薄片從支撐體側加熱壓接於內層基板,使樹脂組成物層貼合於內層基板而進行。作為將樹脂薄片加熱壓接於內層基板的構件(以下,有時稱為「加熱壓接構件」),可列舉例如:經加熱的金屬板(SUS鏡板等)或金屬輥(SUS輥)等。另外,較佳係不將加熱壓接構件直接加壓於樹脂薄片,而是以使樹脂薄片充分追隨內層基板之表面凹凸的方式,隔著耐熱橡膠等之彈性材來進行加壓。The inner layer substrate and the resin sheet are laminated, and for example, the resin sheet can be bonded to the inner layer substrate by heating and pressure-bonding the resin sheet from the support side to the inner layer substrate. The member for heating and pressure-bonding the resin sheet to the inner layer substrate (hereinafter referred to as "heating pressure bonding member") may, for example, be a heated metal plate (such as a SUS mirror plate) or a metal roll (SUS roll). . In addition, it is preferable to pressurize the heating pressure-bonding member directly to the resin sheet, and to pressurize the resin sheet so as to sufficiently follow the surface unevenness of the inner layer substrate via an elastic material such as heat-resistant rubber.
內層基板與樹脂薄片之層合,例如,亦可藉由真空疊層法而實施。於真空疊層法中,加熱壓接溫度,較佳為60℃~160℃,更佳為80℃~140℃之範圍,加熱壓接壓力,較佳為0.098MPa~1.77MPa,更佳為0.29MPa~ 1.47MPa之範圍,加熱壓接時間,較佳為20秒~400秒,更佳為30秒~300秒之範圍。層合較佳係在壓力26.7hPa以下之減壓條件下實施。The lamination of the inner layer substrate and the resin sheet can be carried out, for example, by a vacuum lamination method. In the vacuum lamination method, the heating pressure is preferably from 60 ° C to 160 ° C, more preferably from 80 ° C to 140 ° C, and the heating pressure is preferably from 0.098 MPa to 1.77 MPa, more preferably 0.29. The range of MPa~ 1.47 MPa, the heating and crimping time, preferably 20 seconds to 400 seconds, more preferably 30 seconds to 300 seconds. The lamination is preferably carried out under reduced pressure of 26.7 hPa or less.
層合係可藉由市售之真空疊層機而進行。作為市售之真空疊層機,可列舉例如:名機製作所公司製之真空加壓式疊層機、Nikko-Materials公司製之Vacuum Applicator、分批式真空加壓疊層機等。The lamination system can be carried out by a commercially available vacuum laminator. For example, a vacuum press type laminator manufactured by Nippon Seisakusho Co., Ltd., a Vacuum Applicator manufactured by Nikko-Materials Co., Ltd., a batch type vacuum press lamination machine, or the like can be given.
層合之後,在常壓下(大氣壓下),例如,亦可藉由將加熱壓接構件從支撐體側進行加壓,而進行經層合之樹脂薄片的平滑化處理。平滑化處理之加壓條件,可設為與上述層合之加熱壓接條件相同的條件。平滑化處理可藉由市售之疊層機來進行。另外,層合與平滑化處理亦可使用上述之市售的真空疊層機來連續地進行。After the lamination, under normal pressure (at atmospheric pressure), for example, the heated resin member may be subjected to a smoothing treatment by laminating the heated pressure-bonding member from the side of the support. The pressurization conditions of the smoothing treatment can be set to the same conditions as the above-described laminated thermal pressure bonding conditions. The smoothing treatment can be carried out by a commercially available laminator. Further, the lamination and smoothing treatment can be continuously performed using the commercially available vacuum laminator described above.
於步驟(II)中,將樹脂組成物層進行熱硬化,而形成絕緣層。樹脂組成物層之熱硬化條件並無特別限定,可任意地使用在形成印刷配線板之絕緣層時所採用的條件。In the step (II), the resin composition layer is thermally hardened to form an insulating layer. The thermosetting condition of the resin composition layer is not particularly limited, and the conditions used in forming the insulating layer of the printed wiring board can be arbitrarily used.
例如,樹脂組成物層之熱硬化條件雖依樹脂組成物之種類等而異,但硬化溫度,通常可設為120℃~240℃之範圍(較佳為150℃~220℃之範圍,更佳為170℃~200℃之範圍),硬化時間,通常可設為5分鐘~120分鐘之範圍(較佳為10分鐘~100分鐘,更佳為15分鐘~90分鐘)。For example, the thermosetting conditions of the resin composition layer vary depending on the type of the resin composition, etc., but the curing temperature is usually in the range of 120 ° C to 240 ° C (preferably in the range of 150 ° C to 220 ° C, more preferably The curing time is usually in the range of 5 minutes to 120 minutes (preferably 10 minutes to 100 minutes, more preferably 15 minutes to 90 minutes).
亦可在使樹脂組成物層進行熱硬化之前,將樹脂組成物層以比硬化溫度更低的溫度進行預備加熱。例如,亦可在使樹脂組成物層熱硬化之前,先以通常50℃以上未達120℃(較佳為60℃以上115℃以下,更佳為70℃以上110℃以下)的溫度,將樹脂組成物層進行通常5分鐘以上(較佳為5分鐘~150分鐘,更佳為15分鐘~120分鐘,再更佳為15分鐘~100分鐘)預備加熱。The resin composition layer may be preheated at a temperature lower than the curing temperature before the resin composition layer is thermally cured. For example, the resin may be firstly heated at a temperature of usually 50 ° C or more and less than 120 ° C (preferably 60 ° C or more and 115 ° C or less, more preferably 70 ° C or more and 110 ° C or less) before the resin composition layer is thermally cured. The composition layer is subjected to preliminary heating for usually 5 minutes or more (preferably 5 minutes to 150 minutes, more preferably 15 minutes to 120 minutes, still more preferably 15 minutes to 100 minutes).
於步驟(III)中,於絕緣層形成通孔。作為通孔之形成方法,可列舉:雷射光之照射、蝕刻、機械鑽孔等。其中,雷射光之照射,一般而言容易產生暈輪現象。因此,就有效地活用暈輪現象之抑制的效果之觀點而言,較佳為雷射光之照射。In the step (III), a through hole is formed in the insulating layer. Examples of the method of forming the through holes include irradiation of laser light, etching, mechanical drilling, and the like. Among them, the irradiation of laser light is generally prone to halo phenomenon. Therefore, from the viewpoint of effectively utilizing the effect of suppressing the halo phenomenon, it is preferable to irradiate the laser light.
此雷射光之照射,例如,可使用具有二氧化碳雷射、YAG雷射、準分子雷射等之雷射光源作為光源的雷射加工機來進行。作為所能使用的雷射加工機,可列舉例如:Via Mechanics公司製CO2 雷射加工機「LC-2k212/2C」、三菱電機公司製之605GTWIII(-P)、Panasonic Welding Systems公司製之雷射加工機等。The irradiation of the laser light can be performed, for example, using a laser processing machine having a laser light source such as a carbon dioxide laser, a YAG laser, or a quasi-molecular laser as a light source. Examples of the laser processing machine that can be used include a CO 2 laser processing machine "LC-2k212/2C" manufactured by Via Mechanics, a 605GTWIII (-P) manufactured by Mitsubishi Electric Corporation, and a mine manufactured by Panasonic Welding Systems. Injection processing machine, etc.
雷射光之波長、脈衝數、脈衝寬、輸出等之雷射光的照射條件並無特別限定,亦可設定因應於雷射光源之種類之適當的條件。The irradiation conditions of the laser light such as the wavelength of the laser light, the number of pulses, the pulse width, and the output are not particularly limited, and an appropriate condition depending on the type of the laser light source may be set.
另外,支撐體,可在步驟(I)與步驟(II)之間去除,亦可在步驟(II)與步驟(III)之間去除,亦可在步驟(III)之後去除。其中,就更加抑制挖損部之發生的觀點而言,較佳係於絕緣層形成通孔的步驟(III)之後去除。例如,若在藉由雷射光之照射而於絕緣層形成通孔之後將支撐體剝離,則容易形成良好的形狀之通孔。In addition, the support may be removed between step (I) and step (II), may be removed between step (II) and step (III), or may be removed after step (III). Among them, from the viewpoint of further suppressing the occurrence of the cut portion, it is preferably removed after the step (III) of forming the through hole in the insulating layer. For example, if the support is peeled off after the through holes are formed in the insulating layer by the irradiation of the laser light, it is easy to form a through hole having a good shape.
印刷配線板之製造方法,亦可進一步包含(IV)將絕緣層進行粗化處理的步驟、及(V)形成導體層的步驟。此等之步驟(IV)及步驟(V),亦可依照印刷配線板之製造中所使用的各種方法來實施。另外,在將支撐體於步驟(III)之後去除的情況,該支撐體之去除,可於步驟(III)與步驟(IV)之間實施,亦可於步驟(IV)與步驟(V)之間實施。The method for producing a printed wiring board may further include (IV) a step of roughening the insulating layer and (V) a step of forming a conductor layer. These steps (IV) and (V) can also be carried out in accordance with various methods used in the manufacture of printed wiring boards. In addition, in the case where the support is removed after the step (III), the removal of the support may be performed between the step (III) and the step (IV), or may be performed in the steps (IV) and (V). Implementation.
步驟(IV)係將絕緣層進行粗化處理的步驟。粗化處理的程序及條件並無特別限定,可採用在形成印刷配線板之絕緣層時所使用之任意的程序及條件。例如,可依序實施以膨潤液進行之膨潤處理、以氧化劑進行之粗化處理、以及以中和液進行之中和處理,來將絕緣層進行粗化處理。Step (IV) is a step of roughening the insulating layer. The procedure and conditions of the roughening treatment are not particularly limited, and any procedures and conditions used in forming the insulating layer of the printed wiring board can be employed. For example, the insulating layer may be subjected to a roughening treatment by sequentially performing a swelling treatment with a swelling liquid, a roughening treatment with an oxidizing agent, and a neutralization treatment with a neutralizing liquid.
作為膨潤液雖無特別限定,但可列舉例如:鹼溶液、界面活性劑溶液等,較佳為鹼溶液。作為該鹼溶液,更佳為氫氧化鈉溶液及氫氧化鉀溶液。作為市售之膨潤液,可列舉例如:Atotech Japan公司製之「Swelling Dip Securiganth P」、「Swelling Dip Securiganth SBU」等。又,膨潤液係可單獨使用1種,亦可將2種以上以任意的比率組合使用。以膨潤液進行之膨潤處理雖無特別限定,例如,可藉由將絕緣層浸漬於30℃~90℃之膨潤液中1分鐘~20分鐘而進行。就將絕緣層之樹脂的膨潤抑制為適度的水準之觀點而言,較佳係將絕緣層浸漬於40℃~80℃之膨潤液中5分鐘~15分鐘。The swelling solution is not particularly limited, and examples thereof include an alkali solution and a surfactant solution, and an alkali solution is preferred. As the alkali solution, a sodium hydroxide solution and a potassium hydroxide solution are more preferred. As a commercially available swelling liquid, for example, "Swelling Dip Securiganth P" manufactured by Atotech Japan Co., Ltd., "Swelling Dip Securiganth SBU", and the like can be mentioned. Further, the swelling liquid may be used singly or in combination of two or more kinds in any ratio. The swelling treatment by the swelling liquid is not particularly limited, and for example, it can be carried out by immersing the insulating layer in a swelling liquid at 30 ° C to 90 ° C for 1 minute to 20 minutes. From the viewpoint of suppressing the swelling of the resin of the insulating layer to an appropriate level, it is preferred to immerse the insulating layer in a swelling liquid at 40 ° C to 80 ° C for 5 minutes to 15 minutes.
作為氧化劑雖無特別限定,但可列舉例如:於氫氧化鈉之水溶液中溶解有過錳酸鉀或過錳酸鈉的鹼性過錳酸溶液。又,氧化劑係可單獨使用1種,亦可將2種以上以任意的比率組合使用。以鹼性過錳酸溶液等之氧化劑進行之粗化處理,較佳係使絕緣層浸漬於加熱至60℃~80℃之氧化劑溶液中10分鐘~30分鐘而進行。又,於鹼性過錳酸溶液中之過錳酸鹽的濃度較佳為5質量%~10質量%。作為市售之氧化劑,可列舉例如:Atotech Japan公司製之「Concentrate Compact CP」、「Dosing Solution Securiganth P」等之鹼性過錳酸溶液。The oxidizing agent is not particularly limited, and examples thereof include an alkaline permanganic acid solution in which potassium permanganate or sodium permanganate is dissolved in an aqueous solution of sodium hydroxide. Further, the oxidizing agent may be used singly or in combination of two or more kinds in any ratio. The roughening treatment with an oxidizing agent such as an alkaline permanganic acid solution is preferably carried out by immersing the insulating layer in an oxidizing agent solution heated to 60 ° C to 80 ° C for 10 minutes to 30 minutes. Further, the concentration of the permanganate in the alkaline permanganic acid solution is preferably 5% by mass to 10% by mass. The commercially available oxidizing agent may, for example, be an alkaline permanganic acid solution such as "Concentrate Compact CP" manufactured by Atotech Japan Co., Ltd. or "Dosing Solution Securiganth P".
作為中和液較佳為酸性之水溶液,作為市售品,可列舉例如:Atotech Japan公司製之「Reduction solution Securiganth P」。又,中和液係可單獨使用1種,亦可將2種以上以任意的比率組合使用。以中和液進行之處理,可藉由使經以氧化劑進行之粗化處理後的處理面浸漬於30℃~80℃之中和液中5分鐘~30分鐘而進行。就作業性等之點而言,較佳係將經以氧化劑進行之粗化處理後的對象物浸漬於40℃~70℃之中和液中5分鐘~20分鐘的方法。The neutralization liquid is preferably an acidic aqueous solution, and a commercially available product is, for example, "Reduction solution Securiganth P" manufactured by Atotech Japan Co., Ltd. Further, the neutralizing liquid system may be used singly or in combination of two or more kinds in any ratio. The treatment with the neutralizing solution can be carried out by immersing the treated surface subjected to the roughening treatment with an oxidizing agent in 30 ° C to 80 ° C and in the liquid for 5 minutes to 30 minutes. In terms of workability and the like, a method in which the object subjected to the roughening treatment with an oxidizing agent is immersed in a temperature of 40 to 70 ° C and a liquid for 5 minutes to 20 minutes is preferred.
步驟(V)係形成導體層的步驟。使用於導體層之導體材料並無特別限定。於適合的實施形態中,導體層係包含選自由金、鉑、鈀、銀、銅、鋁、鈷、鉻、鋅、鎳、鈦、鎢、鐵、錫及銦所成之群中的1種以上之金屬。導體層係可為單金屬層,亦可為合金層。作為合金層,可列舉例如:由選自由上述之群中的2種以上之金屬的合金(例如:鎳・鉻合金、銅・鎳合金及銅・鈦合金)所形成的層。其中,就導體層形成之泛用性、成本、圖型化之容易性等的觀點而言,較佳為鉻、鎳、鈦、鋁、鋅、金、鈀、銀或銅之單金屬層;或者鎳・鉻合金、銅・鎳合金、銅・鈦合金之合金層。進而,更佳為鉻、鎳、鈦、鋁、鋅、金、鈀、銀或銅之單金屬層;或者鎳・鉻合金之合金層,特佳為銅之單金屬層。Step (V) is a step of forming a conductor layer. The conductor material used for the conductor layer is not particularly limited. In a preferred embodiment, the conductor layer comprises one selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin, and indium. The above metal. The conductor layer may be a single metal layer or an alloy layer. The alloy layer may, for example, be a layer formed of an alloy (for example, a nickel/chromium alloy, a copper/nickel alloy, a copper or a titanium alloy) selected from two or more metals selected from the above group. Among them, a single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper is preferred from the viewpoints of versatility of the formation of the conductor layer, cost, ease of patterning, and the like; Or an alloy layer of nickel, chromium alloy, copper, nickel alloy, copper or titanium alloy. Further, it is more preferably a single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper; or an alloy layer of nickel/chromium alloy, particularly preferably a single metal layer of copper.
導體層係可為單層構造,亦可為包含2層以上由不同種類之金屬或合金所構成之單金屬層或者合金層的多層構造。在導體層為多層構造的情況,與絕緣層接觸的層,較佳為鉻、鋅或鈦之單金屬層、或者鎳・鉻合金之合金層。The conductor layer may have a single layer structure or a multilayer structure including two or more single metal layers or alloy layers composed of different kinds of metals or alloys. In the case where the conductor layer has a multilayer structure, the layer in contact with the insulating layer is preferably a single metal layer of chromium, zinc or titanium or an alloy layer of nickel/chromium alloy.
導體層之厚度,雖依據所期望之印刷配線板的設計,但一般為3μm~35μm,較佳為5μm~30μm。The thickness of the conductor layer is generally from 3 μm to 35 μm, preferably from 5 μm to 30 μm, depending on the desired design of the printed wiring board.
導體層亦可藉由鍍敷而形成。例如:可藉由半加成法、全加成法等之技術,於絕緣層的表面進行鍍敷,而形成具有所期望之配線圖型的導體層。其中,就製造之簡便性的觀點而言,較佳係藉由半加成法而形成。The conductor layer can also be formed by plating. For example, a conductor layer having a desired wiring pattern can be formed by plating on the surface of the insulating layer by a technique such as a semi-additive method or a full additive method. Among them, from the viewpoint of the simplicity of production, it is preferably formed by a semi-additive method.
以下,顯示藉由半加成法而形成導體層之例。首先,於絕緣層之表面藉由無電解鍍敷而形成鍍敷晶種層。接著,於所形成之鍍敷晶種層上,形成對應於所期望之配線圖型來使鍍敷晶種層的一部分露出之遮罩圖型。於露出的鍍敷晶種層上,藉由電解鍍敷形成金屬層之後,將遮罩圖型去除。其後,將不要的鍍敷晶種層藉由蝕刻等去除,而可形成具有所期望之配線圖型的導體層。Hereinafter, an example in which a conductor layer is formed by a semi-additive method is shown. First, a plating seed layer is formed on the surface of the insulating layer by electroless plating. Next, on the formed plating seed layer, a mask pattern in which a part of the plating seed layer is exposed corresponding to the desired wiring pattern is formed. After the metal layer is formed by electrolytic plating on the exposed plated seed layer, the mask pattern is removed. Thereafter, the unnecessary plating seed layer is removed by etching or the like to form a conductor layer having a desired wiring pattern.
首先,亦可因應需要,重複地實施以步驟(I)~步驟(V)進行之絕緣層及導體層之形成,而製造多層印刷配線板。First, a multilayer printed wiring board can be manufactured by repeatedly performing the formation of the insulating layer and the conductor layer by the steps (I) to (V) as needed.
[14.半導體裝置] 本發明之半導體裝置係包含前述之印刷配線板。此半導體裝置係可使用印刷配線板來製造。[14. Semiconductor device] The semiconductor device of the present invention includes the above-described printed wiring board. This semiconductor device can be fabricated using a printed wiring board.
作為半導體裝置,可列舉:供應於電氣製品(例如,電腦、行動電話、數位相機及電視等)及交通工具(例如,機車、汽車、電車、船舶及航空機等)等之各種半導體裝置。Examples of the semiconductor device include various semiconductor devices that are supplied to electrical products (for example, computers, mobile phones, digital cameras, and televisions) and vehicles (for example, locomotives, automobiles, electric cars, ships, and aircrafts).
半導體裝置,例如,可藉由於印刷配線板的導通部位安裝零件(半導體晶片)而製造。「導通部位」為「印刷配線板之傳遞電訊號的部位」,該場所可為表面,亦可為被埋入的部位任一者。又,半導體晶片係可任意地使用以半導體作為材料之電路元件。The semiconductor device can be manufactured, for example, by mounting a component (semiconductor wafer) on a conductive portion of the printed wiring board. The "conduction portion" is "the portion where the electrical signal is transmitted on the printed wiring board", and the location may be either a surface or a buried portion. Further, the semiconductor wafer can be arbitrarily used as a circuit element using a semiconductor as a material.
在製造半導體裝置時之半導體晶片的安裝方法係只要半導體晶片可有效地發揮功能,則無特別限定。作為安裝方法之例,可列舉:引線結合安裝方法、倒裝晶片安裝方法、無凸緣增層(BBUL)之安裝方法、異向性導電薄膜(ACF)之安裝方法、非導電性薄膜(NCF)之安裝方法等。在此,「無凸緣增層(BBUL)之安裝方法」係指「將半導體晶片直接埋入印刷配線板的凹部,使半導體晶片與印刷配線板上之配線連接的安裝方法」。 [實施例]The method of mounting the semiconductor wafer in the manufacture of the semiconductor device is not particularly limited as long as the semiconductor wafer can function effectively. Examples of the mounting method include a wire bonding mounting method, a flip chip mounting method, a flangeless build-up layer (BBUL) mounting method, an anisotropic conductive film (ACF) mounting method, and a non-conductive film (NCF). ) Installation method, etc. Here, the "mounting method of the flangeless build-up layer (BBUL)" means a "mounting method of directly attaching a semiconductor wafer to a concave portion of a printed wiring board and connecting the semiconductor wafer to the wiring on the printed wiring board". [Examples]
以下,針對本發明,顯示實施例來具體地說明。但,本發明並非限定於以下之實施例者。於以下之說明中,表示量之「份」及「%」只要無另外說明,則分別意味著「質量份」及「質量%」。又,以下所說明之操作,只要無另外說明,則是在常溫常壓之環境下進行。Hereinafter, the embodiments of the present invention will be specifically described. However, the invention is not limited to the following examples. In the following description, "parts" and "%" of the quantity mean "parts by mass" and "% by mass" unless otherwise stated. Further, the operation described below is carried out in an environment of normal temperature and normal pressure unless otherwise specified.
[無機填充材之說明] <無機填充材之平均粒徑之測定方法> 將無機填充材100mg、分散劑(SAN NOPCO公司製「SN9228」)0.1g、及甲基乙基酮10g秤取於藥瓶中,以超音波進行20分鐘分散。使用雷射繞射式粒徑分布測定裝置(島津製作所公司製「SALD-2200」),以分批處理單元方式,將無機填充材之粒徑分布以體積基準進行測定。接著,由所得之粒徑分布,作為中位直徑而算出無機填充材之平均粒徑。[Description of Inorganic Filler] <Method for Measuring Average Particle Diameter of Inorganic Filler> 100 mg of the inorganic filler, 0.1 g of a dispersant ("SN9228" manufactured by SAN NOPCO Co., Ltd.), and 10 g of methyl ethyl ketone were weighed in the medicine. In the bottle, it was dispersed by ultrasonic for 20 minutes. The particle size distribution of the inorganic filler was measured by a batch processing unit using a laser diffraction type particle size distribution measuring apparatus ("SALD-2200" manufactured by Shimadzu Corporation) on a volume basis. Next, the average particle diameter of the inorganic filler was calculated from the obtained particle diameter distribution as the median diameter.
<無機填充材之比表面積之測定方法> 使用BET全自動比表面積測定裝置(Mountech公司製「Macsorb HM-1210」),來測定無機填充材之比表面積。<Method for Measuring Specific Surface Area of Inorganic Filler> The specific surface area of the inorganic filler was measured using a BET fully automatic specific surface area measuring device ("Macsorb HM-1210" manufactured by Mountech Co., Ltd.).
<無機填充材之種類> 無機填充材1:對於球狀二氧化矽(電氣化學工業公司製「UFP-30」、平均粒徑0.078μm、比表面積30.7m2 /g)100份,以N-苯基-3-胺基丙基三甲氧基矽烷(信越化學工業公司製、KBM573)2份進行表面處理者。<Type of Inorganic Filler> Inorganic Filler 1: 100 parts of spherical cerium oxide ("UFP-30", average particle diameter: 0.078 μm, specific surface area: 30.7 m 2 /g, manufactured by Denki Kagaku Kogyo Co., Ltd.), N- Phenyl-3-aminopropyltrimethoxydecane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM573) was subjected to surface treatment in two parts.
無機填充材2:對於球形二氧化矽(Admatechs公司製「SC2500SQ」、平均粒徑0.77μm、比表面積5.9m2 /g)100份,以N-苯基-3-胺基丙基三甲氧基矽烷(信越化學工業公司製、KBM573)1份進行表面處理者。Inorganic filler 2: 100 parts of spherical cerium oxide ("SC2500SQ" manufactured by Admatech Co., Ltd., average particle diameter 0.77 μm, specific surface area 5.9 m 2 /g), and N-phenyl-3-aminopropyltrimethoxy One part of decane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM573) was subjected to surface treatment.
[實施例1.樹脂組成物1之調製] 將聯二甲苯酚型環氧樹脂(三菱化學公司製「YX4000HK」、環氧當量約185)6份、萘型環氧樹脂(新日鐵住金化學公司製「ESN475V」、環氧當量約332)5份、雙酚AF型環氧樹脂(三菱化學公司製「YL7760」、環氧當量約238)15份、環己烷型環氧樹脂(三菱化學公司製「ZX1658GS」、環氧當量約135)2份、及苯氧基樹脂(三菱化學公司製「YX7553BH30」、非揮發性成分30質量%之環己酮:甲基乙基酮(MEK)之1:1溶液、Mw=35000)2份,一邊攪拌一邊加熱溶解於溶劑石腦油20份及環己酮10份之混合溶劑中。將所得之溶液冷卻至室溫。其後,於此溶液中,混合作為(B)成分之萘酚系硬化劑(以式(5)所表示之芳香族烴樹脂。新日鐵住金化學公司製「SN395」、羥基當量107)5份、活性酯系硬化劑(DIC公司製「EXB-8000L-65TM」、活性基當量約220、非揮發性成分65質量%之甲苯:MEK之1:1溶液)6份、無機填充材1 50份、以及胺系硬化促進劑(4-二甲基胺基吡啶(DMAP))0.05份,以高速旋轉混合機均勻地分散,而得到混合物。將此混合物以筒式過濾器(ROKITECHNO公司製「SHP020」)進行過濾,而得到樹脂組成物1。[Example 1. Preparation of Resin Composition 1] 6 parts of a bixylenol type epoxy resin ("YX4000HK" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent: 185), and a naphthalene type epoxy resin (Nippon Steel & Sumitomo Chemical Co., Ltd. Company made "ESN475V", epoxy equivalent of about 332) 5 parts, bisphenol AF type epoxy resin ("YL7760" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent of about 238) 15 parts, cyclohexane type epoxy resin (Mitsubishi Chemical Company's "ZX1658GS", epoxy equivalent of about 135) 2 parts, and phenoxy resin ("XX7553BH30" by Mitsubishi Chemical Corporation, 30% by mass of cyclohexanone: methyl ethyl ketone (MEK)) Two parts of a 1:1 solution and Mw = 35000) were heated and dissolved in a mixed solvent of 20 parts of a solvent naphtha and 10 parts of cyclohexanone while stirring. The resulting solution was cooled to room temperature. Then, a naphthol-based curing agent (the aromatic hydrocarbon resin represented by the formula (5). "SN395" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., hydroxyl equivalent 107) 5 was mixed in the solution. A portion, an active ester-based curing agent ("EXB-8000L-65TM" manufactured by DIC Corporation, a reactive base equivalent of about 220, a non-volatile component of 65 mass% of toluene: a 1:1 solution of MEK), 6 parts, and an inorganic filler 1 50. A part and an amine-based hardening accelerator (4-dimethylaminopyridine (DMAP)) were 0.05 parts, and uniformly dispersed in a high-speed rotary mixer to obtain a mixture. This mixture was filtered with a cartridge filter ("SHP020" manufactured by ROKITECHNO Co., Ltd.) to obtain a resin composition 1.
[實施例2.樹脂組成物2之調製] 除了將所使用之試藥的種類及量如表1所示般地變更以外,進行與實施例1相同的操作,而調製樹脂組成物2。自實施例1之具體的變更點係如下述般。 取代環己烷型環氧樹脂(三菱化學公司製「ZX1658GS」、環氧當量約135)2份,而使用雙酚型環氧樹脂(新日鐵住金化學公司製「ZX1059」、環氧當量約169、雙酚A型與雙酚F型之1:1混合品)4份、及伸萘基醚型環氧樹脂(DIC公司製「EXA-7311-G4」、環氧當量約213)2份。 又,取代苯氧基樹脂(三菱化學公司製「YX7553BH30」、非揮發性成分30質量%之環己酮:甲基乙基酮(MEK)之1:1溶液、Mw=35000)2份,而使用苯氧基樹脂(三菱化學公司製「YL7500BH30」、非揮發性成分30質量%之環己酮:甲基乙基酮(MEK)之1:1溶液、Mw=44000)2份。 進而,作為(B)成分係取代萘酚系硬化劑(新日鐵住金化學公司製「SN395」、羥基當量107)5份,而使用酚系硬化劑(以式(4)所表示之芳香族烴樹脂。群榮化學工業公司製「GRA13H」、羥基當量約75)4份。[Example 2: Preparation of Resin Composition 2] The resin composition 2 was prepared in the same manner as in Example 1 except that the type and amount of the reagent to be used were changed as shown in Table 1. The specific changes from the first embodiment are as follows. In place of the cyclohexane type epoxy resin ("ZX1658GS" manufactured by Mitsubishi Chemical Corporation, and an epoxy equivalent of about 135), two parts were used, and a bisphenol type epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., epoxy equivalent) was used. 169, 1:1 mixture of bisphenol A type and bisphenol F type) 4 parts, and stretching naphthyl ether type epoxy resin ("EXA-7311-G4" by DIC company, epoxy equivalent of about 213) 2 parts . Further, a phenoxy resin ("YX7553BH30" manufactured by Mitsubishi Chemical Corporation, a non-volatile component of 30% by mass of cyclohexanone: a methyl ketone (MEK) 1:1 solution, Mw = 35000) was used, and A phenoxy resin ("YL7500BH30" manufactured by Mitsubishi Chemical Corporation, a non-volatile component of 30% by mass of cyclohexanone: a methyl ketone (MEK) 1:1 solution, Mw = 44000) was used. Further, as the component (B), a naphthol-based curing agent ("SN395" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., and a hydroxyl group equivalent of 107) was substituted for 5 parts, and a phenol-based curing agent (aromatic represented by the formula (4)) was used. Hydrocarbon resin: "GRA13H" manufactured by Kyoei Chemical Industry Co., Ltd., having a hydroxyl equivalent of about 75).
[比較例1.樹脂組成物3之調製] 除了將所使用之試藥的種類及量如表1所示般地變更以外,進行與實施例1相同的操作,而調製樹脂組成物3。自實施例1之具體的變更點係如下述般。 取代環己烷型環氧樹脂(三菱化學公司製「ZX1658GS」、環氧當量約135)2份,而使用雙酚型環氧樹脂(新日鐵住金化學公司製「ZX1059」、環氧當量約169、雙酚A型與雙酚F型之1:1混合品)4份、及伸萘基醚型環氧樹脂(DIC公司製「EXA-7311-G4」、環氧當量約213)2份。 又,取代苯氧基樹脂(三菱化學公司製「YX7553BH30」、非揮發性成分30質量%之環己酮:甲基乙基酮(MEK)之1:1溶液、Mw=35000)2份,而使用苯氧基樹脂(三菱化學公司製「YL7500BH30」、非揮發性成分30質量%之環己酮:甲基乙基酮(MEK)之1:1溶液、Mw=44000)2份。 進而,取代萘酚系硬化劑(新日鐵住金化學公司製「SN395」、羥基當量107)5份,而使用作為(E)成分之含三嗪骨架之甲酚酚醛清漆系硬化劑(DIC公司製「LA-3018-50P」、羥基當量約151、非揮發性成分50%之2-甲氧基丙醇溶液)10份。[Comparative Example 1. Preparation of Resin Composition 3] The resin composition 3 was prepared in the same manner as in Example 1 except that the type and amount of the reagent to be used were changed as shown in Table 1. The specific changes from the first embodiment are as follows. In place of the cyclohexane type epoxy resin ("ZX1658GS" manufactured by Mitsubishi Chemical Corporation, and an epoxy equivalent of about 135), two parts were used, and a bisphenol type epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., epoxy equivalent) was used. 169, 1:1 mixture of bisphenol A type and bisphenol F type) 4 parts, and stretching naphthyl ether type epoxy resin ("EXA-7311-G4" by DIC company, epoxy equivalent of about 213) 2 parts . Further, a phenoxy resin ("YX7553BH30" manufactured by Mitsubishi Chemical Corporation, a non-volatile component of 30% by mass of cyclohexanone: a methyl ketone (MEK) 1:1 solution, Mw = 35000) was used, and A phenoxy resin ("YL7500BH30" manufactured by Mitsubishi Chemical Corporation, a non-volatile component of 30% by mass of cyclohexanone: a methyl ketone (MEK) 1:1 solution, Mw = 44000) was used. Further, in place of a naphthol-based curing agent ("SN395" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., and a hydroxyl group equivalent of 107), 5 parts of a cresol novolak-based hardener (DIC) containing a triazine skeleton as the component (E) was used. 10 parts of "LA-3018-50P", a hydroxyl equivalent of about 151, and a 50% non-volatile component of 2-methoxypropanol solution).
[比較例2.樹脂組成物4之調製] 除了將所使用之試藥的種類及量如表1所示般地變更以外,進行與實施例1相同的操作,而調製樹脂組成物4。自實施例1之具體的變更點係如下述般。 取代萘酚系硬化劑(新日鐵住金化學公司製「SN395」、羥基當量107)5份,而使用作為(E)成分之含三嗪骨架之甲酚酚醛清漆系硬化劑(DIC公司製「LA-3018-50P」、羥基當量約151、非揮發性成分50%之2-甲氧基丙醇溶液)4份。 進而,取代無機填充材1 50份,而使用無機填充材2 80份。[Comparative Example 2. Preparation of Resin Composition 4] The resin composition 4 was prepared in the same manner as in Example 1 except that the type and amount of the reagent to be used were changed as shown in Table 1. The specific changes from the first embodiment are as follows. In place of a naphthol-based curing agent ("SN395" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., and a hydroxyl group equivalent of 107), 5 parts of a cresol novolak-based hardener containing a triazine skeleton as the component (E) (manufactured by DIC Corporation) 4 parts of LA-3018-50P", a hydroxyl equivalent of about 151, and a 50% non-volatile component of 2-methoxypropanol). Further, in place of 50 parts of the inorganic filler, 80 parts of the inorganic filler was used.
[比較例3.樹脂組成物5之調製] 除了將所使用之試藥的種類及量如表1所示般地變更以外,進行與實施例1相同的操作,而調製樹脂組成物5。自實施例1之具體的變更點係如下述般。 取代萘酚系硬化劑(新日鐵住金化學公司製「SN395」、羥基當量107)5份,而使用作為(E)成分之萘酚系硬化劑(新日鐵住金化學公司製「SN485」、羥基當量約215)4份、及含三嗪骨架之甲酚酚醛清漆系硬化劑(DIC公司製「LA-3018-50P」、羥基當量約151、非揮發性成分50%之2-甲氧基丙醇溶液)4份。[Comparative Example 3: Preparation of Resin Composition 5] The resin composition 5 was prepared in the same manner as in Example 1 except that the type and amount of the reagent to be used were changed as shown in Table 1. The specific changes from the first embodiment are as follows. A naphthol-based curing agent ("SN395" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., and a hydroxyl group equivalent of 107) was used as a substitute, and a naphthol-based curing agent (SN485, manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.) was used. A cresol novolak-based curing agent having a hydroxyl group equivalent of about 215) and a triazine skeleton ("LA-3018-50P" manufactured by DIC Corporation, a 2-hydroxy group having a hydroxyl equivalent of about 151 and a nonvolatile component of 50%). Propanol solution) 4 parts.
[比較例4.樹脂組成物6之調製] 除了將所使用之試藥的種類及量如表1所示般地變更以外,進行與實施例1相同的操作,而調製樹脂組成物6。自實施例1之具體的變更點係如下述般。 作為硬化劑係組合萘酚硬化劑(新日鐵住金化學公司製「SN395」、羥基當量107)5份、及活性酯系硬化劑(DIC公司製「EXB-8000L-65TM」、活性基當量約220、非揮發性成分65質量%之甲苯:MEK之1:1溶液)6份,進而,使用作為(E)成分之含三嗪骨架之甲酚酚醛清漆系硬化劑(DIC公司製「LA-3018-50P」、羥基當量約151、非揮發性成分50%之2-甲氧基丙醇溶液)4份。 又,取代無機填充材1 50份,而使用無機填充材2 80份。[Comparative Example 4: Preparation of Resin Composition 6] The resin composition 6 was prepared by the same operation as in Example 1 except that the type and amount of the reagent to be used were changed as shown in Table 1. The specific changes from the first embodiment are as follows. As a curing agent, a combination of a naphthol curing agent ("SN395" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., hydroxyl equivalent 107) and 5 parts of an active ester-based curing agent (EXB-8000L-65TM manufactured by DIC Corporation) and an active base equivalent are used. 220, 6 parts by mass of a non-volatile component of 65% by mass of toluene: 1:1 solution of MEK, and further, a cresol novolak-based hardener containing a triazine skeleton as the component (E) (LA-made by DIC Corporation) 4 parts of 3018-50P", a hydroxyl equivalent of about 151, and a 50% non-volatile component of 2-methoxypropanol). Further, in place of 150 parts of the inorganic filler, 80 parts of the inorganic filler was used.
[樹脂組成物之組成] 將樹脂組成物1~6之調製中所使用的成分與其摻合量(非揮發性成分之質量份)顯示於下述表1。下述表中之簡稱係如以下所述。 硬化劑之含有率:相對於樹脂組成物中之樹脂成分100質量%之硬化劑的含量。 活性酯系硬化劑之含有率:相對於樹脂組成物中之樹脂成分100質量%之活性酯系硬化劑的含量。 無機填充材之含有率:相對於樹脂組成物中之非揮發性成分100質量%之無機填充材的含量。[Composition of Resin Composition] The components used in the preparation of the resin compositions 1 to 6 and the blending amount thereof (parts by mass of the nonvolatile components) are shown in Table 1 below. The abbreviations in the following tables are as follows. The content of the hardener: the content of the hardener relative to 100% by mass of the resin component in the resin composition. The content of the active ester-based curing agent is the content of the active ester-based curing agent relative to 100% by mass of the resin component in the resin composition. The content of the inorganic filler: the content of the inorganic filler relative to 100% by mass of the nonvolatile component in the resin composition.
[樹脂薄片之製造] 作為支撐體係準備以醇酸樹脂系脫模劑(LINTEC公司製「AL-5」)施行脫模處理的聚對苯二甲酸乙二酯薄膜(Toray公司製「LUMIRROR R80」、厚度38μm、軟化點130℃)。[Production of Resin Sheet] A polyethylene terephthalate film ("LUMIRROR R80" manufactured by Toray Co., Ltd.) was prepared as a support system by a release treatment using an alkyd resin release agent ("AL-5" manufactured by LINTEC Co., Ltd.). , thickness 38 μm, softening point 130 ° C).
將樹脂組成物1~6分別以使乾燥後之樹脂組成物層的厚度成為10μm的方式,以模具塗佈機均勻地塗佈於支撐體上,從70℃以95℃進行2分鐘乾燥,藉此,於支撐體上形成樹脂組成物層。接著,於樹脂組成物層之非與支撐體接合的面,貼合作為保護薄膜之聚丙烯薄膜(Oji F-Tex公司製「Alphan MA-411」、厚度15μm)之粗面。藉此,得到依序具有支撐體、樹脂組成物層、及保護薄膜的樹脂薄片A。Each of the resin compositions 1 to 6 was uniformly applied to a support by a die coater so that the thickness of the dried resin composition layer was 10 μm, and dried at 70 ° C for 2 minutes at 95 ° C. Thus, a resin composition layer is formed on the support. Then, on the surface of the resin composition layer which was not bonded to the support, the rough surface of the polypropylene film ("Alphan MA-411" manufactured by Oji F-Tex Co., Ltd., thickness: 15 μm) of the protective film was bonded. Thereby, the resin sheet A which has a support body, a resin composition layer, and a protective film in order is obtained.
[厚度之測定方法] 樹脂組成物層等之層的厚度係使用接觸式膜厚計(Mitutoyo公司製「MCD-25MJ」)進行測定。[Measurement Method of Thickness] The thickness of the layer of the resin composition layer or the like was measured using a contact type film thickness meter ("MCD-25MJ" manufactured by Mitutoyo Co., Ltd.).
[雷射鑽孔加工後之通孔之評估] 採用使用樹脂組成物1~6各者所製造的樹脂薄片A,藉由下述的方法來形成具有通孔的絕緣層,進行該通孔之評估。[Evaluation of Through Holes After Laser Drilling] Using the resin sheet A produced by each of the resin compositions 1 to 6, an insulating layer having through holes is formed by the following method, and the through holes are formed. Evaluation.
<評估用樣品之製作> (1)內層基板之準備: 作為內層基板係準備兩面具有銅箔層之玻璃布基材環氧樹脂兩面貼銅層合板(銅箔之厚度3μm、基板厚度0.15mm、Mitsubishi Gas Chemical公司製「HL832NSF LCA」、255×340mm尺寸)。<Preparation of sample for evaluation> (1) Preparation of inner layer substrate: As an inner layer substrate, a glass cloth substrate having a copper foil layer on both sides was prepared, and a copper laminate was bonded on both sides (the thickness of the copper foil was 3 μm, and the thickness of the substrate was 0.15). Mm, "HL832NSF LCA" manufactured by Mitsubishi Gas Chemical Co., Ltd., 255 x 340 mm size).
(2)樹脂薄片之疊層: 將保護薄膜從樹脂薄片A剝離,使樹脂組成物層露出。使用分批式真空加壓疊層機(Nikko-Materials公司製、2階段增層疊層機「CVP700」),以使樹脂組成物層與內層基板接觸的方式,於內層基板的兩面進行疊層。疊層係藉由進行30秒減壓將氣壓調整至13hPa以下之後,以130℃、壓力0.74MPa進行45秒壓接而實施。接著,以120℃、壓力0.5MPa進行75秒熱壓。(2) Lamination of Resin Sheet: The protective film is peeled off from the resin sheet A to expose the resin composition layer. A batch type vacuum press laminator (a two-stage stacking machine "CVP700" manufactured by Nikko-Materials Co., Ltd.) was used to laminate the resin composition layer on both sides of the inner substrate so as to be in contact with the inner layer substrate. Floor. The lamination was carried out by adjusting the gas pressure to 13 hPa or less after performing pressure reduction for 30 seconds, and then performing pressure bonding at 130 ° C and a pressure of 0.74 MPa for 45 seconds. Next, hot pressing was performed for 75 seconds at 120 ° C and a pressure of 0.5 MPa.
(3)樹脂組成物層之熱硬化: 其後,將疊層有樹脂薄片的內層基板投入100℃之烘箱進行30分鐘加熱,接著,移到180℃之烘箱進行30分鐘加熱,使樹脂組成物層熱硬化,而形成絕緣層。絕緣層之厚度為10μm。藉此,得到依序具有支撐體、絕緣層、內層基板、絕緣層及支撐體的硬化基板A。(3) Thermal hardening of the resin composition layer: Thereafter, the inner substrate on which the resin sheet was laminated was placed in an oven at 100 ° C for 30 minutes, and then transferred to an oven at 180 ° C for 30 minutes to heat the resin. The layer is thermally hardened to form an insulating layer. The thickness of the insulating layer was 10 μm. Thereby, a hardened substrate A having a support, an insulating layer, an inner layer substrate, an insulating layer, and a support in this order is obtained.
(4)雷射鑽孔加工: 使用CO2 雷射加工機(三菱電機公司製「605GTWIII (-P)」),通過支撐體來對絕緣層照射雷射光,而於絕緣層形成頂徑(直徑)為約30μm的複數個通孔。雷射光之照射條件為遮罩徑1mm、脈衝寬16μs、能量0.2mJ/射擊、射擊數2、突衝模式(10kHz)。(4) Laser drilling: Using a CO 2 laser processing machine ("GTGTWIII (-P)" manufactured by Mitsubishi Electric Corporation), the insulating layer is irradiated with laser light through a support, and a top diameter (diameter) is formed in the insulating layer. ) is a plurality of through holes of about 30 μm. The irradiation conditions of the laser light are a mask diameter of 1 mm, a pulse width of 16 μs, an energy of 0.2 mJ/shot, a shot number of 2, and a burst mode (10 kHz).
(5)粗化處理: 於絕緣層形成通孔之後,將支撐體剝離,而得到依序具有絕緣層、內層基板及絕緣層的鑽孔加工基板A。其後,於此鑽孔加工基板A進行作為粗化處理之去膠渣處理。作為去膠渣處理係實施下述之濕式去膠渣處理。(5) Roughening treatment: After the through holes are formed in the insulating layer, the support is peeled off to obtain a drilled substrate A having an insulating layer, an inner substrate, and an insulating layer in this order. Thereafter, the substrate A is drilled and subjected to a desmearing treatment as a roughening treatment. The following desmear treatment was carried out as a desmear treatment system.
(濕式去膠渣處理) 將鑽孔加工基板A以60℃浸漬於膨潤液(Atotech Japan公司製「Swelling Dip Securiganth P」、二乙二醇單丁基醚及氫氧化鈉之水溶液)中10分鐘,接著,以80℃浸漬於氧化劑溶液(Atotech Japan公司製「Concentrate Compact CP」、過錳酸鉀濃度約6%、氫氧化鈉濃度約4%之水溶液)中20分鐘,接著,以40℃浸漬於中和液(Atotech Japan公司製「Reduction solution Securiganth P」、硫酸水溶液)中5分鐘之後,以80℃進行15分鐘乾燥。將此施行了濕式去膠渣處理的鑽孔加工基板A稱為粗化基板A。(Wet degreasing treatment) The drilled substrate A was immersed in a swelling liquid ("Swelling Dip Securiganth P" manufactured by Atotech Japan Co., Ltd., an aqueous solution of diethylene glycol monobutyl ether and sodium hydroxide) at 60 ° C. In the next, the solution was immersed in an oxidizing agent solution (Concentrate Compact CP, manufactured by Atotech Japan Co., Ltd., an aqueous solution having a potassium permanganate concentration of about 6% and a sodium hydroxide concentration of about 4%) at 80 ° C for 20 minutes, followed by 40 ° C. After immersing in a neutralizing liquid ("Reduction solution Securiganth P" manufactured by Atotech Japan Co., Ltd., aqueous sulfuric acid solution) for 5 minutes, it was dried at 80 ° C for 15 minutes. The drilled substrate A subjected to the wet desmearing treatment is referred to as a roughened substrate A.
<粗化處理前之通孔之尺寸測定> 作為樣品係準備粗化處理前之鑽孔加工基板A。針對此鑽孔加工基板A,使用FIB-SEM複合裝置(SII NanoTechnology公司製「SMI3050SE」),進行剖面觀察。詳細而言,使用FIB(聚焦離子束),將絕緣層以使與該絕緣層之厚度方向平行且通過通孔之孔底的中心的剖面顯現的方式削出。藉由SEM(掃描型電子顯微鏡)觀察此剖面,由所觀察之影像測定通孔之頂徑及底徑。<Measurement of the size of the through hole before the roughening treatment> The drilled substrate A before the roughening treatment is prepared as the sample system. For the drilled substrate A, a cross-sectional observation was performed using a FIB-SEM composite device ("SMI3050SE" manufactured by SII NanoTechnology Co., Ltd.). Specifically, the FIB (Focused Ion Beam) is used to cut the insulating layer so as to appear parallel to the thickness direction of the insulating layer and through the cross section of the center of the hole bottom of the through hole. The cross section was observed by SEM (scanning electron microscope), and the top and bottom diameters of the through holes were measured from the observed images.
在隨機地選出的5個部位之通孔進行前述測定。並且,採用所測定之5個部位的通孔之頂徑的測定值之平均作為該樣品之通孔的頂徑Lt1。又,採用所測定之5個部位的通孔之底徑的測定值之平均作為該樣品之通孔的底徑Lb1。The above measurement was carried out in the through holes of the five selected portions. Further, the average of the measured values of the top diameters of the through holes of the five portions measured was taken as the top diameter Lt1 of the through holes of the sample. Further, the average of the measured values of the bottom diameters of the through holes measured at the five locations was taken as the bottom diameter Lb1 of the through holes of the sample.
<粗化處理後之通孔之尺寸測定> 作為樣品係取代鑽孔加工基板A而使用粗化基板A。除了以上事項以外,進行與前述<粗化處理前之通孔之尺寸測定>相同的操作,測定粗化處理後之通孔之頂徑Lt2及底徑Lb2。<Measurement of Size of Through Hole After Roughening Process> The roughened substrate A is used as a sample system instead of the drilled substrate A. In addition to the above, the same operation as the above-described <Measurement of the size of the through hole before the roughening treatment> was performed, and the top diameter Lt2 and the bottom diameter Lb2 of the through hole after the roughening treatment were measured.
<粗化處理前之暈輪距離之測定> 以光學顯微鏡(Hirox公司製「KH8700」)觀察粗化處理前之鑽孔加工基板A。詳細而言,使用光學顯微鏡(CCD),從鑽孔加工基板A的上部觀察通孔之周邊的絕緣層。此觀察係將光學顯微鏡的焦點對準通孔來進行。觀察的結果,於通孔之周圍,觀察到從該通孔之孔頂的邊緣起連續,絕緣層變成白色之甜甜圈狀的暈輪部。因此,由所觀察的影像,測定通孔之孔頂的半徑(相當於暈輪部之內周半徑)r1,與暈輪部之外周半徑r2,將此等半徑r1與半徑r2之差r2-r1作為該測定地點之孔頂的邊緣起之暈輪距離來算出。<Measurement of the halo distance before the roughening treatment> The drilled substrate A before the roughening treatment was observed with an optical microscope ("KH8700" manufactured by Hirox Co., Ltd.). Specifically, an insulating layer around the through hole is observed from the upper portion of the drilled substrate A using an optical microscope (CCD). This observation is performed by aligning the focus of the optical microscope with the through holes. As a result of the observation, around the through hole, it was observed that the insulating layer became a white donut-shaped halo portion continuously from the edge of the hole top of the through hole. Therefore, from the observed image, the radius of the hole top of the through hole (corresponding to the inner circumference radius of the halo portion) r1, and the outer radius r2 of the halo portion, and the difference r2 between the radius r1 and the radius r2 are measured. R1 was calculated as the halo distance from the edge of the hole top of the measurement site.
以隨機地選出的5個部位之通孔進行前述測定。並且,採用所測定之5個部位的通孔之暈輪距離的測定值之平均作為該樣品之孔頂的邊緣起之暈輪距離Wt。The above measurement was carried out using through-holes of five sites randomly selected. Further, the average of the measured values of the halo distances of the through holes of the five portions measured was used as the halo distance Wt from the edge of the hole top of the sample.
<粗化處理後之暈輪距離之尺寸測定> 針對粗化基板A,使用FIB-SEM複合裝置(SII NanoTechnology公司製「SMI3050SE」),進行剖面觀察。詳細而言,使用FIB(聚焦離子束),將絕緣層以使與該絕緣層之厚度方向平行且通過通孔之孔底的中心的剖面顯現的方式削出。藉由SEM(掃描型電子顯微鏡)觀察此剖面。觀察的結果,觀察到從孔底的邊緣起連續,絕緣層從內層基板之銅箔層剝離所形成的間隙部。由所觀察的影像,測定孔底的中心至孔底之邊緣為止的距離(相當於暈輪部之內周半徑)r3,與孔底的中心至遠離前述間隙部側之端部為止的距離(相當於暈輪部之外周半徑)r4,將此等距離r3與距離r4之差r4-r3作為該測定地點之孔底的邊緣起之暈輪距離來算出。<Measurement of the size of the halo distance after the roughening treatment> The cross-sectional observation was performed on the roughened substrate A using a FIB-SEM composite apparatus ("SMI3050SE" manufactured by SII NanoTechnology Co., Ltd.). Specifically, the FIB (Focused Ion Beam) is used to cut the insulating layer so as to appear parallel to the thickness direction of the insulating layer and through the cross section of the center of the hole bottom of the through hole. This section was observed by SEM (Scanning Electron Microscope). As a result of the observation, it was observed that the gap formed by the insulating layer from the copper foil layer of the inner substrate continued from the edge of the bottom of the hole. From the observed image, the distance from the center of the bottom of the hole to the edge of the bottom of the hole (corresponding to the inner peripheral radius of the halo portion) r3, and the distance from the center of the bottom of the hole to the end portion away from the gap portion side ( Corresponding to the outer radius of the halo portion, r4, the difference r4-r3 between the distance r3 and the distance r4 is calculated as the halo distance from the edge of the bottom of the measurement site.
以隨機地選出的5個部位之通孔進行前述測定。並且,採用所測定之5個部位的通孔之暈輪距離的測定值之平均作為該樣品之孔底的邊緣起之暈輪距離Wb。The above measurement was carried out using through-holes of five sites randomly selected. Further, the average of the measured values of the halo distances of the through holes measured at the five locations was used as the halo distance Wb from the edge of the bottom of the sample.
[結果] 將前述實施例及比較例之評估結果顯示於下述表2。 於表2中,漸縮比係表示粗化處理前之通孔的頂徑Lt1與底徑Lb1之比「Lb1/Lt1」。若此漸縮比Lb1/Lt1為75%以上,則將鑽孔加工性判定為「佳」,若漸縮比Lb1/Lt1為未達75%,則將鑽孔加工性判定為「不佳」。[Results] The evaluation results of the foregoing examples and comparative examples are shown in Table 2 below. In Table 2, the taper ratio indicates the ratio "Lb1/Lt1" of the top diameter Lt1 and the bottom diameter Lb1 of the through hole before the roughening treatment. When the taper ratio Lb1/Lt1 is 75% or more, the drilling processability is judged as "good", and if the taper ratio Lb1/Lt1 is less than 75%, the drilling processability is judged as "poor". .
於表2中,粗化處理前之暈輪比Ht係表示粗化處理前之孔頂的邊緣起之暈輪距離Wt,與粗化處理前之通孔之孔頂的半徑(Lt1/2)之比「Wt/(Lt1/2)」。若此暈輪比Ht為35%以下,則將暈輪評估判定為「佳」,若暈輪比Ht大於35%,則將暈輪評估判定為「不佳」。In Table 2, the halo ratio Ht before the roughening treatment indicates the halo distance Wt from the edge of the hole top before the roughening treatment, and the radius of the hole top of the through hole before the roughening treatment (Lt1/2) The ratio is "Wt/(Lt1/2)". If the halo ratio Ht is 35% or less, the halo evaluation is judged as "good", and if the halo ratio Ht is greater than 35%, the halo evaluation is judged as "poor".
於表2中,粗化處理後之暈輪比Hb係表示粗化處理後之孔底的邊緣起之暈輪距離Wb,與粗化處理後之通孔之孔底的半徑(Lb2/2)之比「Wb/(Lb2/2)」。若此暈輪比Hb為35%以下,則將暈輪評估判定為「佳」,若暈輪比Ht大於35%,則將暈輪評估判定為「不佳」。In Table 2, the halo ratio Hb after the roughening treatment indicates the halo distance Wb from the edge of the bottom of the hole after the roughening treatment, and the radius of the bottom of the through hole after the roughening treatment (Lb2/2). The ratio is "Wb/(Lb2/2)". If the halo ratio Hb is 35% or less, the halo evaluation is judged as "good", and if the halo ratio Ht is more than 35%, the halo evaluation is judged as "poor".
[探討] 如由表2得知般地,於實施例中,由於使用厚度為10μm之薄的樹脂組成物層來形成絕緣層,因此可於該絕緣層形成漸縮比大的通孔。由此結果,可確認到藉由本發明之樹脂組成物層,可實現即使厚度薄亦可形成良好的形狀之通孔的絕緣層。[Discussion] As is apparent from Table 2, in the embodiment, since the insulating layer is formed using a thin resin composition layer having a thickness of 10 μm, a through hole having a large taper ratio can be formed in the insulating layer. As a result, it was confirmed that the resin composition layer of the present invention can realize an insulating layer which can form a through hole having a good shape even if the thickness is small.
又,如由表2所得知般地,於實施例中,使用厚度為10μm之薄的樹脂組成物層來形成絕緣層,並且伴隨著通孔之形成所產生的暈輪部之暈輪比為小。由此結果,可確認到藉由本發明之樹脂組成物層,可實現即使厚度薄亦可抑制暈輪現象的絕緣層。Further, as is known from Table 2, in the embodiment, a thin resin composition layer having a thickness of 10 μm was used to form an insulating layer, and the halo ratio of the halo portion generated along with the formation of the through holes was small. As a result, it was confirmed that the insulating layer of the resin composition layer of the present invention can suppress the halo phenomenon even if the thickness is small.
尤其,如前述實施例1及2所得般之厚度為15μm以下、通孔之頂徑為35μm以下、通孔之漸縮比為80%以上、通孔之底部的邊緣起之暈輪距離為5μm以下,且相對於通孔之底部半徑之暈輪比為35%以下的絕緣層係以往無法實現。因而,可實現如此之絕緣層一事,於期望絕緣層之薄型化之近年來的印刷配線板中,具有顯著的技術性意義。In particular, the thickness is 15 μm or less, the top diameter of the via hole is 35 μm or less, the taper ratio of the via hole is 80% or more, and the halo distance of the bottom of the via hole is 5 μm as obtained in the above Examples 1 and 2. Hereinafter, an insulating layer having a halo ratio of 35% or less with respect to the bottom radius of the through hole has not been conventionally realized. Therefore, the realization of such an insulating layer has a significant technical significance in the recent development of a printed wiring board in which the thickness of the insulating layer is reduced.
於實施例1~2中,雖未顯示於粗化基板A之絕緣層上形成導體層之情況的具體結果,但若觀察上述之實施例的結果,則藉由於粗化基板A之絕緣層上形成導體層可得到滿足要件(i)~(v)之特定印刷配線板一事係該業者能夠明確理解。 又,於實施例1~2中,確認到即使在不含有(D)成分~(F)成分的情況,雖程度上有所差異,但亦回歸與上述實施例相同的結果。In the first to second embodiments, although the specific results of the case where the conductor layer is formed on the insulating layer of the roughened substrate A are not shown, if the result of the above embodiment is observed, the substrate of the substrate A is roughened by roughening. The formation of the conductor layer to obtain a specific printed wiring board that satisfies the requirements (i) to (v) can be clearly understood by the industry. Further, in Examples 1 and 2, it was confirmed that even when the components (D) to (F) were not contained, the results were the same as those of the above examples.
100‧‧‧絕緣層100‧‧‧Insulation
100U‧‧‧與導體層相反側之絕緣層之面100U‧‧‧face of the insulating layer on the opposite side of the conductor layer
110‧‧‧通孔110‧‧‧through hole
120‧‧‧孔底120‧‧‧ hole bottom
120C‧‧‧孔底的中心120C‧‧‧ Center of the hole bottom
130‧‧‧孔頂130‧‧‧ hole top
140‧‧‧暈輪部140‧‧‧Hammer
150‧‧‧通孔之孔頂的邊緣150‧‧‧The edge of the hole top of the through hole
160‧‧‧暈輪部之外周側的緣部160‧‧‧ Edge of the outer peripheral side of the halo
170‧‧‧通孔之孔底的邊緣170‧‧‧ Edge of the bottom of the hole
180‧‧‧間隙部180‧‧‧ gap section
190‧‧‧間隙部之外周側的端部190‧‧‧End of the outer side of the gap
200‧‧‧內層基板200‧‧‧ Inner substrate
210‧‧‧導體層(第1導體層)210‧‧‧Conductor layer (1st conductor layer)
220‧‧‧第2導體層220‧‧‧2nd conductor layer
300‧‧‧印刷配線板300‧‧‧Printed wiring board
Lb‧‧‧通孔的底徑Lb‧‧‧ hole diameter
Lt‧‧‧通孔的頂徑Top diameter of Lt‧‧‧ through hole
T‧‧‧絕緣層之厚度T‧‧‧ thickness of insulation
Wt‧‧‧孔頂的邊緣起之暈輪距離The halo distance from the edge of the Wt‧‧ hole top
Wb‧‧‧孔底的邊緣起之暈輪距離The halo distance from the edge of the Wb‧‧ hole bottom
[第1圖]第1圖係示意性顯示使本發明之第一實施形態的樹脂組成物層硬化所得之絕緣層與內層基板的剖面圖。 [第2圖]第2圖係示意性顯示使本發明之第一實施形態的樹脂組成物層硬化所得之絕緣層之與導體層相反側之面的俯視圖。 [第3圖]第3圖係示意性顯示使本發明之第一實施形態的樹脂組成物層硬化所得之粗化處理後之絕緣層與內層基板的剖面圖。 [第4圖]第4圖係本發明之第二實施形態的印刷配線板的示意剖面圖。[Fig. 1] Fig. 1 is a cross-sectional view schematically showing an insulating layer and an inner layer substrate obtained by curing the resin composition layer of the first embodiment of the present invention. [Fig. 2] Fig. 2 is a plan view schematically showing a surface of the insulating layer obtained by curing the resin composition layer of the first embodiment of the present invention on the opposite side to the conductor layer. [Fig. 3] Fig. 3 is a cross-sectional view showing the insulating layer and the inner layer substrate after the roughening treatment obtained by curing the resin composition layer of the first embodiment of the present invention. Fig. 4 is a schematic cross-sectional view showing a printed wiring board according to a second embodiment of the present invention.
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