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TW201841870A - Ceramic/aluminum bonded body, insulated circuit board, LED module, ceramic member, ceramic/aluminum bonded body manufacturing method, and insulated circuit board manufacturing method - Google Patents

Ceramic/aluminum bonded body, insulated circuit board, LED module, ceramic member, ceramic/aluminum bonded body manufacturing method, and insulated circuit board manufacturing method Download PDF

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Publication number
TW201841870A
TW201841870A TW107104124A TW107104124A TW201841870A TW 201841870 A TW201841870 A TW 201841870A TW 107104124 A TW107104124 A TW 107104124A TW 107104124 A TW107104124 A TW 107104124A TW 201841870 A TW201841870 A TW 201841870A
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TW
Taiwan
Prior art keywords
aluminum
ceramic
layer
nitride layer
ceramic body
Prior art date
Application number
TW107104124A
Other languages
Chinese (zh)
Other versions
TWI744474B (en
Inventor
寺﨑伸幸
Original Assignee
日商三菱綜合材料股份有限公司
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Priority claimed from JP2018009821A external-priority patent/JP7052374B2/en
Application filed by 日商三菱綜合材料股份有限公司 filed Critical 日商三菱綜合材料股份有限公司
Publication of TW201841870A publication Critical patent/TW201841870A/en
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Publication of TWI744474B publication Critical patent/TWI744474B/en

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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
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    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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Abstract

本發明之陶瓷/鋁接合體係接合有陶瓷構件與由鋁或鋁合金所成的鋁構件，陶瓷構件具有由氮化矽所成的陶瓷本體及在此陶瓷本體中之與鋁構件之接合面所形成的氮化鋁層或氧化鋁層，隔著氮化鋁層或前述氧化鋁層，接合鋁構件，陶瓷本體具備氮化矽相與形成在此氮化矽相之間的玻璃相，在陶瓷本體的玻璃相中之與氮化鋁層或前述氧化鋁層之界面側部分存在Al。The ceramic / aluminum joint system of the present invention joins a ceramic member and an aluminum member made of aluminum or an aluminum alloy. The ceramic member has a ceramic body made of silicon nitride and a joint surface with the aluminum member in the ceramic body. The formed aluminum nitride layer or aluminum oxide layer is bonded to an aluminum member via the aluminum nitride layer or the foregoing aluminum oxide layer. The ceramic body includes a silicon nitride phase and a glass phase formed between the silicon nitride phase. Al exists in an interface side portion of the glass phase of the body with the aluminum nitride layer or the alumina layer.

Description

陶瓷／鋁接合體、絕緣電路基板、ＬＥＤ模組、陶瓷構件、陶瓷／鋁接合體之製造方法、絕緣電路基板之製造方法Ceramic / aluminum bonded body, insulated circuit board, LED module, ceramic member, manufacturing method of ceramic / aluminum bonded body, manufacturing method of insulated circuit board

本發明關於將陶瓷構件與由鋁或鋁合金所成的鋁構件予以接合而成之陶瓷/鋁接合體、將陶瓷基板與由鋁或鋁合金所成的鋁板予以接合而成之絕緣電路基板、具備此絕緣電路基板之LED模組、上述之陶瓷/鋁接合體中所使用之陶瓷構件，以及上述的陶瓷/鋁接合體之製造方法、絕緣電路基板之製造方法。 　　本案係以2017年2月6日在日本申請的特願2017-019737號及以2018年1月24日在日本申請的特願2018-009821號為基礎，主張優先權，在此援用其內容。The present invention relates to a ceramic / aluminum bonded body formed by joining a ceramic member and an aluminum member made of aluminum or an aluminum alloy, an insulated circuit board formed by joining a ceramic substrate and an aluminum plate made of aluminum or an aluminum alloy, The LED module provided with this insulated circuit board, the ceramic member used in the above-mentioned ceramic / aluminum joint, the method for manufacturing the above-mentioned ceramic / aluminum joint, and the method for manufacturing the insulated circuit board.案 This case claims priority based on Japanese Patent Application No. 2017-019737 filed in Japan on February 6, 2017 and Japanese Patent Application No. 2018-009821 filed in Japan on January 24, 2018, and its contents are incorporated herein.

功率模組、LED模組及熱電模組具備：在絕緣層之一面形成有由導電材料所成的電路層之絕緣電路基板，接合有功率半導體元件、LED元件及熱電元件之構造。 　　又，於上述之絕緣電路基板中，亦提供在陶瓷基板之一面接合導電性優異的金屬板而成為電路層，或在另一面接合散熱性優異的金屬板，形成金屬層之構造者。 　　再者，為了有效率地散逸從搭載於電路層的元件等所產生的熱，亦提供在絕緣電路基板之金屬層側接合有散熱片之附散熱片的絕緣電路基板。The power module, the LED module, and the thermoelectric module include an insulating circuit substrate having a circuit layer made of a conductive material formed on one surface of the insulating layer, and a structure in which a power semiconductor element, an LED element, and a thermoelectric element are bonded. In addition, in the above-mentioned insulated circuit board, there is provided a structure in which a metal plate having excellent conductivity is bonded to one surface of the ceramic substrate to form a circuit layer, or a metal plate having excellent heat dissipation is bonded to the other surface to form a metal layer. Furthermore, in order to efficiently dissipate the heat generated from the components mounted on the circuit layer, an insulated circuit board with a heat sink attached to a metal layer side of the insulated circuit board is provided.

例如，專利文獻1中所示的功率模組具備一種構造，其具備：在陶瓷基板之一面形成有由鋁板所成的電路層，同時在另一面形成有由鋁板所成的金屬層之絕緣電路基板，與在此電路層上透過焊材接合之半導體元件。 　　又，專利文獻2、3中所示的LED模組具備一種構造，其具備：在由陶瓷所成的基材之一面形成導電性的電路層，在絕緣基板之另一面接合散熱體，在電路層上搭載有發光元件。 　　此處，於接合陶瓷基板與成為電路層及金屬層的鋁板之際，通常使用Al-Si系焊材。 [先前技術文獻] [專利文獻]For example, the power module shown in Patent Document 1 has a structure including an insulating circuit in which a circuit layer made of an aluminum plate is formed on one surface of a ceramic substrate, and a metal layer made of an aluminum plate is formed on the other surface. A substrate and a semiconductor element bonded to the circuit layer through a solder. In addition, the LED modules shown in Patent Documents 2 and 3 have a structure including a conductive circuit layer formed on one surface of a substrate made of ceramic, a heat sink bonded to the other surface of an insulating substrate, and a circuit A light emitting element is mounted on the layer. Here, when a ceramic substrate is bonded to an aluminum plate serving as a circuit layer and a metal layer, an Al-Si based solder material is usually used. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本發明專利第3171234號公報 　　[專利文獻2]日本特開2013-153157號公報 　　[專利文獻3]日本特開2015-070199號公報[Patent Document 1] Japanese Invention Patent No. 3121334 [Patent Document 2] Japanese Patent Laid-Open No. 2013-153157 [Patent Document 3] Japanese Patent Laid-Open No. 2015-070199

[發明所欲解決的課題][Problems to be Solved by the Invention]

可是，於上述之LED模組等中，要求進一步減薄搭載發光元件的電路層之厚度，例如有將厚度100μm以下的鋁板接合於陶瓷基板之情況。 　　如此地，使用Al-Si系焊材接合厚度薄的鋁板時，焊材的Si係擴散至成為電路層的鋁板而熔點降低，有電路層的一部分熔融之虞。However, in the above-mentioned LED module and the like, it is required to further reduce the thickness of the circuit layer on which the light-emitting element is mounted. For example, an aluminum plate having a thickness of 100 μm or less may be bonded to a ceramic substrate. In this way, when a thin aluminum plate is joined using an Al-Si based welding material, the Si based material of the welding material diffuses to the aluminum plate that becomes the circuit layer, the melting point is lowered, and a part of the circuit layer may be melted.

為了抑制電路層之熔融，當降低接合溫度或減少焊材的Si量時，接合變不充分，接合可靠性會降低。因此，無法適用於發熱密度高的用途。 　　如以上，於以往的絕緣電路基板中，當薄地形成電路層時，難以抑制電路層之熔融且提高電路層與陶瓷基板之接合可靠性。In order to suppress the melting of the circuit layer, when the bonding temperature is lowered or the amount of Si in the solder material is reduced, the bonding becomes insufficient, and the bonding reliability is reduced. Therefore, it cannot be used for applications with high heat generation density. As described above, in the conventional insulated circuit substrate, when the circuit layer is formed thinly, it is difficult to suppress the melting of the circuit layer and improve the reliability of the connection between the circuit layer and the ceramic substrate.

又，於LED模組中為了確保強度，會使用由氮化矽(Si3 N4 )所成的陶瓷基板。然而，由氮化矽(Si3 N4 )所成的陶瓷基板係具備氮化矽相與形成在此氮化矽相之間的玻璃相，由於此玻璃相與鋁板之接合變不充分，無法充分地確保接合強度。再者，此玻璃相係因燒結氮化矽的原料時所添加的燒結助劑而形成。 　　根據以上，於由氮化矽(Si3 N4 )所成的陶瓷基板中，與金屬板(尤其鋁板)的接合可靠性係比由氮化鋁(AlN)或氧化鋁(Al2 O3 )所成的陶瓷基板低。In addition, in order to ensure the strength in the LED module, a ceramic substrate made of silicon nitride (Si 3 N 4 ) is used. However, a ceramic substrate made of silicon nitride (Si 3 N 4 ) has a silicon nitride phase and a glass phase formed between the silicon nitride phase. The glass phase and the aluminum plate cannot be sufficiently bonded to each other. Sufficiently ensure joint strength. The glass phase is formed by a sintering aid added when the raw material of silicon nitride is sintered. Based on the above, in a ceramic substrate made of silicon nitride (Si 3 N 4 ), the bonding reliability with a metal plate (especially an aluminum plate) is higher than that of aluminum nitride (AlN) or aluminum oxide (Al 2 O 3 ). The resulting ceramic substrate is low.

本發明係鑒於前述情事而完成者，目的在於提供：在鋁構件不熔融下，以高可靠性與由氮化矽(Si3 N4 )所成的陶瓷構件接合之陶瓷/鋁接合體、絕緣電路基板、具備此絕緣電路基板之LED模組、上述之陶瓷/鋁接合體所用之陶瓷構件、陶瓷/鋁接合體之製造方法、絕緣電路基板之製造方法。 [解決課題的手段]The present invention has been made in view of the foregoing circumstances, and an object thereof is to provide a ceramic / aluminum bonded body and an insulator bonded to a ceramic member made of silicon nitride (Si 3 N 4 ) with high reliability without melting aluminum members. A circuit board, an LED module provided with the insulated circuit board, a ceramic member used for the above-mentioned ceramic / aluminum joint, a method for manufacturing the ceramic / aluminum joint, and a method for manufacturing an insulated circuit board. [Means for solving problems]

為了解決上述課題，本發明之一態樣的陶瓷/鋁接合體係將陶瓷構件與由鋁或鋁合金所成的鋁構件予以接合而成之陶瓷/鋁接合體，其特徵為：前述陶瓷構件具有由氮化矽所成的陶瓷本體及在此陶瓷本體中之與前述鋁構件之接合面所形成的氮化鋁層或氧化鋁層，隔著前述氮化鋁層或前述氧化鋁層，接合前述鋁構件，前述陶瓷本體具備氮化矽相與形成在此氮化矽相之間的玻璃相，在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al。In order to solve the above-mentioned problems, a ceramic / aluminum joint system according to one aspect of the present invention is a ceramic / aluminum joint formed by joining a ceramic member and an aluminum member made of aluminum or an aluminum alloy, wherein the ceramic member has A ceramic body made of silicon nitride and an aluminum nitride layer or an aluminum oxide layer formed on a joint surface between the ceramic body and the aluminum member in the ceramic body are bonded to each other through the aluminum nitride layer or the aluminum oxide layer. For an aluminum member, the ceramic body includes a silicon nitride phase and a glass phase formed between the silicon nitride phase, and an interface side portion of the glass phase of the ceramic body with the aluminum nitride layer or the aluminum oxide layer. Al is present.

依照此構成之陶瓷/鋁接合體，由於前述陶瓷構件具有由氮化矽所成的陶瓷本體及在此陶瓷本體中之與前述鋁構件之接合面所形成的氮化鋁層或氧化鋁層，在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al，故由氮化矽所成的陶瓷本體與氮化鋁層或氧化鋁層係強固地結合。 　　又，由於接合陶瓷構件之氮化鋁層或氧化鋁層與鋁構件，鋁構件與陶瓷構件之接合可靠性高。 　　因此，可提供接合可靠性優異之陶瓷/鋁接合體。According to the ceramic / aluminum joint body thus constituted, since the aforementioned ceramic member has a ceramic body made of silicon nitride and an aluminum nitride layer or an aluminum oxide layer formed on a joint surface between the ceramic body and the aforementioned aluminum member, Al exists in the interface side of the glass phase of the ceramic body with the aluminum nitride layer or the aluminum oxide layer. Therefore, the ceramic body made of silicon nitride and the aluminum nitride layer or the aluminum oxide layer are strongly bonded. Combined. In addition, since the aluminum nitride layer or the aluminum oxide layer of the ceramic member is bonded to the aluminum member, the bonding reliability of the aluminum member and the ceramic member is high. Therefore, ceramic / aluminum joints with excellent joint reliability can be provided.

此處，於本發明之一態樣的陶瓷/鋁接合體中，在前述陶瓷本體中之與前述鋁構件之接合面，形成有前述氮化鋁層，前述氮化鋁層係從前述陶瓷本體側起可依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層。 　　此時，前述氮化鋁層係如上述，由於具有氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層，故陶瓷本體的氮化矽係進行反應而形成氮化鋁層，由氮化矽所成的陶瓷本體與氮化鋁層係更強固地結合。藉此，即使對於陶瓷/鋁接合體負荷有冷熱循環時，也能抑制陶瓷構件與鋁構件之接合率降低。Here, in the ceramic / aluminum joint according to an aspect of the present invention, the aluminum nitride layer is formed on a joint surface of the ceramic body with the aluminum member, and the aluminum nitride layer is formed from the ceramic body. From the side, the first aluminum nitride layer having a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and a slope of the nitrogen concentration in the thickness direction, and a nitrogen concentration of 30 atomic% or more and less than 50 atomic% may be sequentially provided. The second aluminum nitride layer. At this time, as described above, the aluminum nitride layer has the first aluminum nitride layer having a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and a slope of the nitrogen concentration in the thickness direction, and a nitrogen concentration of 30 atomic%. Above the second aluminum nitride layer that does not reach 50 atomic%, the silicon nitride system of the ceramic body reacts to form an aluminum nitride layer, and the ceramic body made of silicon nitride and the aluminum nitride layer system are stronger. Combined. Thereby, even when a cooling / heating cycle is applied to a ceramic / aluminum joint load, it is possible to suppress a decrease in the joining rate between the ceramic member and the aluminum member.

本發明之一態樣的絕緣電路基板係將陶瓷基板與由鋁或鋁合金所成的鋁板予以接合而成之絕緣電路基板，其特徵為：前述陶瓷基板具有由氮化矽所成的陶瓷本體及在此陶瓷本體中之與前述鋁板之接合面所形成的氮化鋁層或氧化鋁層，隔著前述氮化鋁層或前述氧化鋁層，接合前述鋁板，前述陶瓷本體具備氮化矽相與形成在此氮化矽相之間的玻璃相，在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al。An insulated circuit substrate according to one aspect of the present invention is an insulated circuit substrate formed by joining a ceramic substrate and an aluminum plate made of aluminum or an aluminum alloy, wherein the ceramic substrate has a ceramic body made of silicon nitride. And the aluminum nitride layer or the aluminum oxide layer formed on the joint surface with the aluminum plate in the ceramic body, and the aluminum plate is bonded through the aluminum nitride layer or the aluminum oxide layer, and the ceramic body has a silicon nitride phase In the glass phase formed between the silicon nitride phase, Al is present in an interface side portion of the glass phase of the ceramic body with the aluminum nitride layer or the aluminum oxide layer.

依照此構成之絕緣電路基板，由於前述陶瓷基板具有由氮化矽所成的陶瓷本體與氮化鋁層或氧化鋁層，在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al，故由氮化矽所成的陶瓷本體與氮化鋁層或氧化鋁層係強固地結合。 　　又，由於接合陶瓷基板的氮化鋁層或氧化鋁層與鋁板，可提供鋁板與陶瓷基板的接合可靠性優異之絕緣電路基板。According to the insulated circuit substrate configured as described above, since the ceramic substrate has a ceramic body made of silicon nitride and an aluminum nitride layer or an aluminum oxide layer, the glass phase of the ceramic body is the same as the aluminum nitride layer or the foregoing. Al exists on the interface side of the aluminum oxide layer, so the ceramic body made of silicon nitride is strongly bonded to the aluminum nitride layer or the aluminum oxide layer. In addition, since the aluminum nitride layer or the aluminum oxide layer of the ceramic substrate is bonded to the aluminum plate, an insulated circuit substrate having excellent bonding reliability between the aluminum plate and the ceramic substrate can be provided.

此處，於本發明之一態樣的絕緣電路基板中，在前述陶瓷本體中之與前述鋁板之接合面，形成有前述氮化鋁層，前述氮化鋁層係可從前述陶瓷本體側起依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層。 　　此時，前述氮化鋁層係如上述，由於具有氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層，故陶瓷本體的氮化矽係進行反應而形成氮化鋁層，由氮化矽所成的陶瓷本體與氮化鋁層係更強固地結合。藉此，即使對於絕緣電路基板負荷有冷熱循環時，也能抑制陶瓷基板與鋁板之接合率降低。Here, in an insulated circuit substrate according to an aspect of the present invention, the aluminum nitride layer is formed on a joint surface between the ceramic body and the aluminum plate, and the aluminum nitride layer may be from the ceramic body side. In this order, a first aluminum nitride layer having a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and having a nitrogen concentration tilt in the thickness direction, and a second aluminum nitride layer having a nitrogen concentration of 30 atomic% or more and less than 50 atomic%. Aluminum nitride layer. At this time, as described above, the aluminum nitride layer has the first aluminum nitride layer having a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and a slope of the nitrogen concentration in the thickness direction, and a nitrogen concentration of 30 atomic%. Above the second aluminum nitride layer that does not reach 50 atomic%, the silicon nitride system of the ceramic body reacts to form an aluminum nitride layer, and the ceramic body made of silicon nitride and the aluminum nitride layer system are stronger. Combined. Thereby, even when a cold and heat cycle is applied to the load of the insulated circuit board, it is possible to suppress a decrease in the bonding rate between the ceramic substrate and the aluminum plate.

本發明之一態樣的LED模組之特徵為具備上述的絕緣電路基板與接合於前述鋁板之一面側的LED元件。 　　於此構成之LED模組中，由於使用陶瓷基板與鋁板的接合可靠性優異之絕緣電路基板，即使負荷有冷熱循環時，也能抑制剝離等的不良狀況之發生。An aspect of the present invention is an LED module including the above-mentioned insulated circuit board and an LED element bonded to one side of the aluminum plate. LEDThe LED module with this structure uses an insulated circuit board with excellent joint reliability between the ceramic substrate and the aluminum plate, which can prevent the occurrence of problems such as peeling even when the cooling and heating cycles are applied to the load.

本發明之一態樣的陶瓷構件之特徵為具備由氮化矽所成的陶瓷本體與在此陶瓷本體之表面所形成的氮化鋁層或氧化鋁層，前述陶瓷本體具備氮化矽相與形成在此氮化矽相之間的玻璃相，在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al。A ceramic member according to an aspect of the present invention includes a ceramic body made of silicon nitride and an aluminum nitride layer or an aluminum oxide layer formed on a surface of the ceramic body. The ceramic body includes a silicon nitride phase and In the glass phase formed between the silicon nitride phases, Al is present in an interface side portion of the glass phase of the ceramic body with the aluminum nitride layer or the aluminum oxide layer.

依照此構成之陶瓷構件，由於在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al，故由氮化矽所成的陶瓷本體與氮化鋁層或氧化鋁層係強固地結合。 　　又，由於具備氮化鋁層或氧化鋁層，與鋁構件可良好地接合。According to the ceramic member having this structure, since Al exists in an interface side portion of the glass phase of the ceramic body with the aluminum nitride layer or the aluminum oxide layer, the ceramic body made of silicon nitride and aluminum nitride The layers or alumina layers are strongly bonded. In addition, since the aluminum nitride layer or the aluminum oxide layer is provided, the aluminum member can be well bonded to the aluminum member.

此處，於本發明之一態樣的陶瓷構件中，可成為在前述陶瓷本體之表面，形成有前述氮化鋁層，前述氮化鋁層係從前述陶瓷本體側起依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層之構成。 　　此時，前述氮化鋁層係如上述，由於具有氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層，故陶瓷本體的氮化矽係進行反應而形成氮化鋁層，由氮化矽所成的陶瓷本體與氮化鋁層係更強固地結合。Here, in the ceramic member according to an aspect of the present invention, the aluminum nitride layer may be formed on a surface of the ceramic body, and the aluminum nitride layer may have a nitrogen concentration in order from the ceramic body side. The structure of the first aluminum nitride layer having a concentration of nitrogen of 50 atomic% or more and 80 atomic% or less and having a slope of the nitrogen concentration in the thickness direction, and a second aluminum nitride layer having a nitrogen concentration of 30 atomic% or more and less than 50 atomic% . At this time, as described above, the aluminum nitride layer has the first aluminum nitride layer having a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and a slope of the nitrogen concentration in the thickness direction, and a nitrogen concentration of 30 atomic%. Above the second aluminum nitride layer that does not reach 50 atomic%, the silicon nitride system of the ceramic body reacts to form an aluminum nitride layer, and the ceramic body made of silicon nitride and the aluminum nitride layer system are stronger. Combined.

又，於本發明之一態樣的陶瓷構件中，可成為在前述陶瓷本體之表面，形成有前述氮化鋁層，在此氮化鋁層中之與前述陶瓷本體相反側之面，形成有金屬鋁部之構成。 　　此時，可隔著金屬鋁部接合鋁構件，可更容易地接合鋁構件。再者，金屬鋁部不一定要形成在氮化鋁層中之與前述陶瓷本體相反側之面的全體，也可為部分地形成。In the ceramic member according to one aspect of the present invention, the aluminum nitride layer may be formed on a surface of the ceramic body, and a surface of the aluminum nitride layer on the side opposite to the ceramic body may be formed. Structure of metal aluminum section. In this case, the aluminum member can be joined via the metal aluminum portion, and the aluminum member can be joined more easily. It is to be noted that the metal aluminum portion does not necessarily have to be formed on the entirety of the aluminum nitride layer on the side opposite to the ceramic body, and may be formed partially.

本發明之一態樣的陶瓷/鋁接合體之製造方法係製造上述之陶瓷/鋁接合體的陶瓷/鋁接合體之製造方法，其特徵為具備：在由氮化矽所成的陶瓷本體之表面，形成厚度20μm以下的鋁層之鋁層形成步驟，將形成有前述鋁層的陶瓷本體加熱到前述鋁層的固相線溫度以上之溫度，形成氮化鋁層之氮化鋁層形成步驟，與隔著前述氮化鋁層，接合鋁構件之鋁構件接合步驟。A ceramic / aluminum joint manufacturing method according to one aspect of the present invention is a method for manufacturing the ceramic / aluminum joint ceramic / aluminum joint described above, and is characterized by comprising: a ceramic body made of silicon nitride; On the surface, an aluminum layer forming step of forming an aluminum layer having a thickness of 20 μm or less, heating the ceramic body on which the aluminum layer is formed to a temperature above the solidus temperature of the aluminum layer, and forming an aluminum nitride layer. And an aluminum member bonding step of bonding an aluminum member with the aforementioned aluminum nitride layer.

依照此構成的陶瓷/鋁接合體之製造方法，具備在由氮化矽所成的陶瓷本體之表面，形成厚度20μm以下的鋁層之鋁層形成步驟，與將形成有前述鋁層的陶瓷本體加熱到前述鋁層的固相線溫度以上之溫度，形成氮化鋁層之氮化鋁層形成步驟。因此，於此氮化鋁層形成步驟中，Al侵入陶瓷本體的玻璃相中，同時氮化矽相的Si3 N4 係分解，所生成的氮與鋁層係反應，而形成氮化鋁層。再者，由於鋁層之一部分殘存，在氮化鋁層中之與前述陶瓷本體相反側之面，亦形成金屬鋁部。 　　而且，由於具備隔著前述氮化鋁層接合鋁構件之鋁構件接合步驟，可容易地接合陶瓷構件與鋁構件。 　　因此，可製造接合可靠性優異之陶瓷/鋁接合體。According to the method for manufacturing a ceramic / aluminum joint structured in this way, it is provided with an aluminum layer forming step of forming an aluminum layer having a thickness of 20 μm or less on the surface of a ceramic body made of silicon nitride, and a ceramic body on which the aforementioned aluminum layer is to be formed. An aluminum nitride layer forming step of heating to a temperature above the solidus temperature of the aluminum layer to form an aluminum nitride layer. Therefore, in this aluminum nitride layer forming step, Al penetrates into the glass phase of the ceramic body, and at the same time, the Si 3 N 4 series of the silicon nitride phase is decomposed, and the generated nitrogen reacts with the aluminum layer system to form an aluminum nitride layer. . Furthermore, since a part of the aluminum layer remains, a metal aluminum portion is also formed on the surface of the aluminum nitride layer on the side opposite to the ceramic body. Furthermore, since the aluminum member joining step of joining the aluminum member through the aluminum nitride layer is provided, the ceramic member and the aluminum member can be easily joined. Therefore, a ceramic / aluminum bonded body having excellent bonding reliability can be manufactured.

此處，於本發明之一態樣的陶瓷/鋁接合體之製造方法中，可具備：使前述氮化鋁層氧化而形成氧化鋁層之氧化處理步驟，與隔著前述氧化鋁層，接合鋁構件之鋁構件接合步驟。 　　此時，藉由使氮化鋁層氧化，可形成氧化鋁層。再者，在氮化鋁層中之與前述陶瓷本體相反側之面，形成金屬鋁部時，藉由氧化處理步驟而此金屬鋁部亦變成氧化鋁層。 　　又，由於具備隔著前述氧化鋁層接合鋁構件之鋁構件接合步驟，可容易地接合陶瓷構件與鋁構件。 　　因此，可製造接合可靠性優異之陶瓷/鋁接合體。Here, the ceramic / aluminum joint manufacturing method according to one aspect of the present invention may include an oxidation treatment step of oxidizing the aluminum nitride layer to form an aluminum oxide layer, and bonding the aluminum nitride layer through the aluminum oxide layer. Aluminum member joining step of aluminum member. In this case, an aluminum oxide layer can be formed by oxidizing the aluminum nitride layer. Furthermore, when a metal aluminum portion is formed on the surface of the aluminum nitride layer on the side opposite to the ceramic body, the metal aluminum portion also becomes an aluminum oxide layer by an oxidation treatment step. In addition, since the aluminum member joining step of joining the aluminum member via the aforementioned alumina layer is provided, the ceramic member and the aluminum member can be easily joined. Therefore, a ceramic / aluminum joint having excellent joint reliability can be manufactured.

本發明之一態樣的絕緣電路基板之製造方法係製造上述之絕緣電路基板的絕緣電路基板之製造方法，其特徵為具備：在由氮化矽所成的陶瓷本體之表面，形成厚度20μm以下的鋁層之鋁層形成步驟，將形成有前述鋁層的陶瓷本體加熱到前述鋁層的固相線溫度以上之溫度，形成氮化鋁層之氮化鋁層形成步驟，與隔著前述氮化鋁層接合鋁板之鋁板接合步驟。The manufacturing method of an insulated circuit board according to one aspect of the present invention is a manufacturing method of an insulated circuit board as described above, which is characterized in that a thickness of 20 μm or less is formed on a surface of a ceramic body made of silicon nitride. The aluminum layer forming step of the aluminum layer is performed by heating the ceramic body on which the aluminum layer is formed to a temperature above the solidus temperature of the aluminum layer to form an aluminum nitride layer. An aluminum plate bonding step of bonding an aluminum layer to an aluminum plate.

依照此構成的絕緣電路基板之製造方法，由於具備在由氮化矽所成的陶瓷本體之表面，形成厚度20μm以下的鋁層之鋁層形成步驟，與將形成有前述鋁層的陶瓷本體加熱到前述鋁層的固相線溫度以上之溫度，形成氮化鋁層之氮化鋁層形成步驟。因此，於此氮化鋁層形成步驟中，Al侵入陶瓷本體的玻璃相中，同時氮化矽相的Si3 N4 係分解，所生成的氮與鋁層係反應，而形成氮化鋁層。再者，由於鋁層之一部分殘存，在氮化鋁層中之與前述陶瓷本體相反側之面，亦形成金屬鋁部。 　　而且，由於具備隔著前述氮化鋁層接合鋁板之鋁板接合步驟，可容易地接合陶瓷基板與鋁板。 　　因此，可製造接合可靠性優異之絕緣電路基板。According to the method for manufacturing an insulated circuit board having this structure, since the aluminum layer forming step of forming an aluminum layer having a thickness of 20 μm or less is formed on the surface of the ceramic body made of silicon nitride, and the ceramic body on which the foregoing aluminum layer is formed is heated An aluminum nitride layer forming step for forming an aluminum nitride layer to a temperature above the solidus temperature of the foregoing aluminum layer. Therefore, in this aluminum nitride layer forming step, Al penetrates into the glass phase of the ceramic body, and at the same time, the Si 3 N 4 series of the silicon nitride phase is decomposed, and the generated nitrogen reacts with the aluminum layer system to form an aluminum nitride layer. . Furthermore, since a part of the aluminum layer remains, a metal aluminum portion is also formed on the surface of the aluminum nitride layer on the side opposite to the ceramic body. Furthermore, since the aluminum plate joining step of joining the aluminum plate via the aluminum nitride layer is provided, the ceramic substrate and the aluminum plate can be easily joined. Therefore, an insulated circuit board having excellent bonding reliability can be manufactured.

此處，於本發明之一態樣的絕緣電路基板之製造方法中，可具備：使前述氮化鋁層氧化而形成氧化鋁層之氧化處理步驟，與隔著前述氧化鋁層接合鋁板之鋁板接合步驟。 　　此時，藉由使氮化鋁層氧化，可形成氧化鋁層。再者，在氮化鋁層中之與前述陶瓷本體相反側之面，形成有金屬鋁部時，藉由氧化處理步驟而此金屬鋁部亦變成氧化鋁層。 　　又，由於具備隔著前述氧化鋁層接合鋁板之鋁板接合步驟，可容易地接合陶瓷基板與鋁板。 　　因此，可製造接合可靠性優異之絕緣電路基板。 [發明的效果]Here, the manufacturing method of an insulated circuit board according to an aspect of the present invention may include an oxidation treatment step of oxidizing the aluminum nitride layer to form an aluminum oxide layer, and bonding an aluminum plate with an aluminum plate through the aluminum oxide layer. Joining step. In this case, an aluminum oxide layer can be formed by oxidizing the aluminum nitride layer. Furthermore, when a metal aluminum portion is formed on the surface of the aluminum nitride layer on the side opposite to the ceramic body, the metal aluminum portion also becomes an aluminum oxide layer by an oxidation treatment step. Furthermore, since the aluminum plate joining step of joining the aluminum plate via the alumina layer is provided, the ceramic substrate and the aluminum plate can be easily joined. Therefore, an insulated circuit board having excellent bonding reliability can be manufactured. [Effect of the invention]

依照本發明，可提供：在鋁構件不熔融下，以高可靠性與由氮化矽(Si3 N4 )所成的陶瓷構件接合之陶瓷/鋁接合體、絕緣電路基板、具備此絕緣電路基板之LED模組、上述之陶瓷/鋁接合體所用之陶瓷構件、陶瓷/鋁接合體之製造方法、絕緣電路基板之製造方法。According to the present invention, it is possible to provide a ceramic / aluminum bonded body, an insulated circuit board, and an insulated circuit provided with the aluminum member without being melted and bonded to a ceramic member made of silicon nitride (Si 3 N 4 ) with high reliability. The LED module of the substrate, the ceramic member used for the above-mentioned ceramic / aluminum joint, the method for producing the ceramic / aluminum joint, and the method for producing the insulated circuit board.

[實施發明的形態][Mode for Carrying Out the Invention]

以下，對於本發明之實施形態，參照附圖進行說明。Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(第1實施形態) 　　首先，對於本發明之第1實施形態，參照圖1至圖6進行說明。本實施形態之陶瓷/鋁接合體係藉由接合作為陶瓷構件的陶瓷基板11與作為鋁構件的鋁板22、23(電路層12、金屬層13)而構成之絕緣電路基板10。(First Embodiment) First, a first embodiment of the present invention will be described with reference to Figs. 1 to 6. The ceramic / aluminum bonding system of this embodiment is an insulated circuit board 10 configured by bonding a ceramic substrate 11 as a ceramic member and aluminum plates 22 and 23 (circuit layer 12 and metal layer 13) as aluminum members.

圖1中，顯示本發明之第1實施形態的絕緣電路基板10(陶瓷/鋁接合體)及使用此絕緣電路基板10之LED模組1。 　　此LED模組1具備：絕緣電路基板10，在此絕緣電路基板10的一側(圖1中上側)之面，隔著接合層2接合之LED元件3，與在絕緣電路基板10的另一側(圖1中下側)所配置之散熱片51。FIG. 1 shows an insulated circuit board 10 (ceramic / aluminum bonded body) and a LED module 1 using the insulated circuit board 10 according to the first embodiment of the present invention. This LED module 1 includes an insulated circuit board 10, an LED element 3 bonded to the surface of one side (upper side in FIG. 1) of the insulated circuit board 10 via a bonding layer 2, and another side of the insulated circuit board 10. The heat sink 51 is arranged on the side (lower side in FIG. 1).

LED元件3係以半導體材料所構成，為將電能轉換成光之光電轉換元件。再者，LED元件3的光轉換效率為20～30%左右，剩餘的70～80%之能量變成熱，因此於LED模組1中要求有效率地使熱散逸。 　　此處，接合此LED元件3與絕緣電路基板10之接合層2，例如為Au-Sn合金焊材等。The LED element 3 is made of a semiconductor material and is a photoelectric conversion element that converts electric energy into light. In addition, since the light conversion efficiency of the LED element 3 is about 20 to 30%, and the remaining 70 to 80% of the energy becomes heat, the LED module 1 is required to efficiently dissipate the heat. Here, the bonding layer 2 for bonding the LED element 3 and the insulated circuit board 10 is, for example, an Au-Sn alloy solder or the like.

而且，本實施形態之絕緣電路基板10係如圖1所示，具備：陶瓷基板30，配設於此陶瓷基板30之一面(圖1中上面)的電路層12，與配設於陶瓷基板30之另一面(圖1中下面)的金屬層13。Furthermore, as shown in FIG. 1, the insulated circuit board 10 of this embodiment includes a ceramic substrate 30, a circuit layer 12 arranged on one side (the upper surface in FIG. 1) of the ceramic substrate 30, and a ceramic substrate 30. Metal layer 13 on the other side (bottom in FIG. 1).

陶瓷基板30係以絕緣性高的Si3 N4 (氮化矽)所構成。此處，陶瓷基板30之厚度係設定在0.2～1.5mm之範圍內，本實施形態中設定在0.32mm。 　　此處，本實施形態中之陶瓷基板30係如圖4所示，具有：由氮化矽所成的陶瓷本體31，及在此陶瓷本體31中之與電路層12及金屬層13之接合面所形成的氮化鋁層36。The ceramic substrate 30 is made of Si 3 N 4 (silicon nitride) with high insulation. Here, the thickness of the ceramic substrate 30 is set within a range of 0.2 to 1.5 mm, and is set to 0.32 mm in this embodiment. Here, as shown in FIG. 4, the ceramic substrate 30 in this embodiment includes a ceramic body 31 made of silicon nitride, and a joint surface with the circuit layer 12 and the metal layer 13 in the ceramic body 31. The formed aluminum nitride layer 36.

電路層12係如圖6所示，藉由在陶瓷基板30之一面(圖6中上面)接合由鋁或鋁合金所成的鋁板22(鋁構件)而形成。作為構成電路層12的鋁板22(鋁構件)，例如較宜使用純度為99質量%以上的鋁(2N鋁)、純度99.9質量%以上的鋁或純度為99.99質量%以上的鋁等之軋製板，於本實施形態中，使用純度為99質量%以上的鋁(2N鋁)。再者，電路層12之厚度例如設定在0.05mm以上0.8mm以下之範圍內，本實施形態中設定在0.2mm。As shown in FIG. 6, the circuit layer 12 is formed by bonding an aluminum plate 22 (aluminum member) made of aluminum or an aluminum alloy to one surface (the upper surface in FIG. 6) of the ceramic substrate 30. As the aluminum plate 22 (aluminum member) constituting the circuit layer 12, for example, rolling with aluminum having a purity of 99% by mass or more (2N aluminum), aluminum with a purity of 99.9% by mass or more, or aluminum with a purity of 99.99% by mass or more is preferably used. In this embodiment, aluminum (2N aluminum) having a purity of 99% by mass or more is used. The thickness of the circuit layer 12 is set in a range of, for example, 0.05 mm or more and 0.8 mm or less, and is set to 0.2 mm in this embodiment.

金屬層13係如圖6所示，藉由在陶瓷基板30之另一面(圖6中下面)接合由鋁或鋁合金所成的鋁板23(鋁構件)而形成。作為構成金屬層13的鋁板23(鋁構件)，例如較宜使用純度為99質量%以上的鋁(2N鋁)、純度99.9質量%以上的鋁或純度為99.99質量%以上的鋁等之軋製板，於本實施形態中，使用純度為99質量%以上的鋁(2N鋁)。再者，金屬層13之厚度例如設定在0.05mm以上1.6mm以下之範圍內，本實施形態中設定在0.6mm。As shown in FIG. 6, the metal layer 13 is formed by bonding an aluminum plate 23 (aluminum member) made of aluminum or an aluminum alloy to the other surface (lower surface in FIG. 6) of the ceramic substrate 30. As the aluminum plate 23 (aluminum member) constituting the metal layer 13, for example, rolling with aluminum having a purity of 99% by mass or more (2N aluminum), aluminum with a purity of 99.9% by mass or more, or aluminum with a purity of 99.99% by mass or more is preferably used. In this embodiment, aluminum (2N aluminum) having a purity of 99% by mass or more is used. The thickness of the metal layer 13 is set in a range of, for example, 0.05 mm or more and 1.6 mm or less, and is set to 0.6 mm in this embodiment.

散熱片51係用於冷卻前述的絕緣電路基板10者，於本實施形態中，為以熱傳導性良好的材質所構成之散熱板。本實施形態中，散熱片51係以A6063(鋁合金)構成。 　　此散熱片51係於本實施形態中，使用焊材直接接合至絕緣電路基板10的金屬層13。The heat sink 51 is used for cooling the aforementioned insulated circuit board 10, and in this embodiment, it is a heat sink made of a material having good thermal conductivity. In this embodiment, the heat sink 51 is made of A6063 (aluminum alloy). In this embodiment, the heat sink 51 is directly bonded to the metal layer 13 of the insulating circuit board 10 using a solder.

此處，於圖2中顯示陶瓷基板30與電路層12及金屬層13的接合界面之放大說明圖。 　　陶瓷基板30係如上述成為一種構造，其具有由氮化矽所成的陶瓷本體31及在此陶瓷本體31中之與電路層12及金屬層13之接合面所形成的氮化鋁層36，接合此氮化鋁層36與電路層12及金屬層13。 　　此處，氮化鋁層36之厚度較佳設為4nm以上100nm以下之範圍內。Here, an enlarged explanatory diagram of a bonding interface between the ceramic substrate 30 and the circuit layer 12 and the metal layer 13 is shown in FIG. 2. The ceramic substrate 30 has a structure as described above, and has a ceramic body 31 made of silicon nitride and an aluminum nitride layer 36 formed on the ceramic body 31 and the junction surface with the circuit layer 12 and the metal layer 13. The aluminum nitride layer 36 is bonded to the circuit layer 12 and the metal layer 13. Here, the thickness of the aluminum nitride layer 36 is preferably set in a range of 4 nm to 100 nm.

又，於本實施形態中，如圖3所示，氮化鋁層36係從陶瓷本體31側起依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層36A，與氮濃度為30原子%以上且未達50原子%，氮濃度在厚度方向中大致一定之第2氮化鋁層36B。In the present embodiment, as shown in FIG. 3, the aluminum nitride layer 36 has a nitrogen concentration of 50 atomic% or more and 80 atomic% or less in order from the ceramic body 31 side, and has a nitrogen concentration in the thickness direction. The inclined first aluminum nitride layer 36A and the second aluminum nitride layer 36B having a nitrogen concentration of 30 atomic% or more and less than 50 atomic%, and the nitrogen concentration is substantially constant in the thickness direction.

而且，陶瓷本體31係如圖2所示，具備氮化矽相32與玻璃相33，於此玻璃相33之內部存在Al。玻璃相33係因燒結氮化矽的原料時所添加的燒結助劑而形成者，如圖2所示，存在於氮化矽相32彼此之粒界部分。Further, as shown in FIG. 2, the ceramic body 31 includes a silicon nitride phase 32 and a glass phase 33, and Al is present inside the glass phase 33. The glass phase 33 is formed by a sintering aid added when the raw material of the silicon nitride is sintered. As shown in FIG. 2, the glass phase 33 exists in the grain boundary portions of the silicon nitride phases 32.

此處，於本實施形態中，當分析接合界面時，將Al、Si、O、N之合計值當作100原子%時，將Si未達15原子%且O為3原子%以上25原子%以下之範圍內的區域當作玻璃相33。 　　此玻璃相33中存在的Al量，當將Al、Si、O、N之合計值當作100原子%時，較佳為35原子%以上65原子%以下之範圍內。Here, in the present embodiment, when the joint interface is analyzed, when the total value of Al, Si, O, and N is taken as 100 atomic%, Si is less than 15 atomic% and O is 3 atomic% or more and 25 atomic% Areas within the following ranges are regarded as the glass phase 33. The amount of Al present in the glass phase 33 is preferably within a range of 35 atomic% to 65 atomic% when the total value of Al, Si, O, and N is taken as 100 atomic%.

接著，對於上述本實施形態的絕緣電路基板10之製造方法，參照圖5及圖6進行說明。Next, a method for manufacturing the insulated circuit board 10 according to the present embodiment will be described with reference to FIGS. 5 and 6.

(鋁層形成步驟S01) 　　準備由氮化矽所成的板材(陶瓷本體31)，於此陶瓷本體31之表面，形成由厚度20μm以下的鋁或鋁合金所成的鋁層41。本實施形態中，鋁層41係以純度99質量%以上的純鋁所構成者。 　　此處，當形成厚度未達1μm的鋁層41時，較佳為採用濺鍍等的成膜技術。又，當形成厚度1μm以上20μm以下的鋁層41時，較佳為將壓延箔等層合於陶瓷本體31之表面。 　　再者，鋁層41之厚度的下限較佳設為5μm以上，鋁層41之厚度的下限較佳設為10μm以下。(Aluminum layer forming step S01) A plate (ceramic body 31) made of silicon nitride is prepared, and an aluminum layer 41 made of aluminum or an aluminum alloy having a thickness of 20 μm or less is formed on the surface of the ceramic body 31. In this embodiment, the aluminum layer 41 is composed of pure aluminum having a purity of 99% by mass or more. Here, when the aluminum layer 41 having a thickness of less than 1 μm is formed, a film formation technique such as sputtering is preferably used. When the aluminum layer 41 having a thickness of 1 μm or more and 20 μm or less is formed, a rolled foil or the like is preferably laminated on the surface of the ceramic body 31. Furthermore, the lower limit of the thickness of the aluminum layer 41 is preferably set to 5 μm or more, and the lower limit of the thickness of the aluminum layer 41 is preferably set to 10 μm or less.

(氮化鋁層形成步驟S02) 　　接著，對於形成有鋁層41的陶瓷本體31，以構成鋁層41的鋁或鋁合金的固相線溫度以上之溫度進行熱處理，形成氮化鋁層36。氮化鋁層36係在從陶瓷本體31之表面侵蝕到內部的方向中形成。 　　此處，於進行熱處理之際，為了抑制經熔融的鋁變成球狀，較佳為以碳板等壓住鋁層41之表面。又，為了抑制蒸發等，熱處理溫度之上限較佳設為750℃以下。(Aluminum nitride layer forming step S02) Next, the ceramic body 31 on which the aluminum layer 41 is formed is heat-treated at a temperature higher than the solidus temperature of the aluminum or aluminum alloy constituting the aluminum layer 41 to form an aluminum nitride layer 36. The aluminum nitride layer 36 is formed in a direction from the surface of the ceramic body 31 to the inside. Here, in order to suppress the molten aluminum from becoming spherical when performing the heat treatment, it is preferable to press the surface of the aluminum layer 41 with a carbon plate or the like. In order to suppress evaporation and the like, the upper limit of the heat treatment temperature is preferably 750 ° C or lower.

再者，於本實施形態中，如圖4所示，鋁層41不全部變成氮化鋁層36，而一部分作為金屬鋁部38存在。而且，於金屬鋁部38與陶瓷本體31之間存在氮化鋁層36。 　　因此，俯視陶瓷本體31時，相對於形成有鋁層41的面積而言，氮化鋁層36之面積率為80%以上。於本實施形態中，由於在金屬鋁部38與陶瓷本體31之間存在氮化鋁層36，故金屬鋁部38之面積與氮化鋁層36之面積係視為相同。Furthermore, in this embodiment, as shown in FIG. 4, the aluminum layer 41 is not entirely changed to the aluminum nitride layer 36, and a part thereof exists as the metal aluminum portion 38. An aluminum nitride layer 36 is provided between the metal aluminum portion 38 and the ceramic body 31. Therefore, when the ceramic body 31 is viewed from the top, the area ratio of the aluminum nitride layer 36 is 80% or more with respect to the area where the aluminum layer 41 is formed. In this embodiment, since the aluminum nitride layer 36 exists between the metal aluminum portion 38 and the ceramic body 31, the area of the metal aluminum portion 38 and the area of the aluminum nitride layer 36 are considered to be the same.

(鋁板接合步驟S03) 　　接著，隔著陶瓷基板30的氮化鋁層36，接合成為電路層12及金屬層13的鋁板22、23。此處，作為接合手段，使用焊材時，可適宜選擇固相擴散接合、暫態液相接合(TLP)等之既有的手段。於本實施形態中，如圖6所示，使用Al-Si系焊材26、27進行接合。(Aluminum plate bonding step S03) Next, the aluminum plates 22 and 23 forming the circuit layer 12 and the metal layer 13 are bonded via the aluminum nitride layer 36 of the ceramic substrate 30. Here, when a welding material is used as a joining means, an existing means such as solid phase diffusion joining, transient liquid phase joining (TLP), etc. can be appropriately selected. In this embodiment, as shown in FIG. 6, Al-Si based welding materials 26 and 27 are used for joining.

具體而言，隔著Al-Si系的焊材26、27，層合陶瓷基板30與鋁板22、23，於積層方向中以1kgf/cm2 以上10kgf/cm2 以下(0.098MPa以上0.980MPa以下)之範圍加壓之狀態下裝入真空加熱爐中，接合陶瓷基板30與鋁板22、23，形成電路層12及金屬層13。 　　作為此時的接合條件，在接合環境為氬或氮等之惰性環境或真空環境等中進行。於真空環境時，可為10-6 Pa以上10-3 Pa以下之範圍內。加熱溫度係設定在580℃以上630℃以下之範圍內，上述加熱溫度的保持時間係設定在10分鐘以上45分鐘以下之範圍內。Specifically, the ceramic substrate 30 and the aluminum plates 22 and 23 are laminated via Al-Si based welding materials 26 and 27, and the lamination direction is 1 kgf / cm 2 or more and 10 kgf / cm 2 or less (0.098 MPa or more and 0.980 MPa or less). ) Range is put into a vacuum heating furnace under pressure, and the ceramic substrate 30 and the aluminum plates 22 and 23 are bonded to form the circuit layer 12 and the metal layer 13. The joining conditions at this time are performed in an inert environment such as argon or nitrogen, a vacuum environment, or the like. In a vacuum environment, it can be in a range of 10 -6 Pa or more and 10 -3 Pa or less. The heating temperature is set in a range of 580 ° C to 630 ° C, and the holding time of the heating temperature is set in a range of 10 minutes to 45 minutes.

此處，積層方向的加壓荷重之下限較佳設為3kgf/cm2 以上，更佳設為5kgf/cm2 以上。另一方面，積層方向的加壓荷重之上限較佳設為8kgf/cm2 以下，更佳設為7kgf/cm2 以下。 　　又，加熱溫度之下限較佳設為585℃以上，更佳設為590℃以上。另一方面，加熱溫度之上限較佳設為625℃以下，更佳設為620℃以下。 　　再者，加熱溫度的保持時間之下限較佳設為15分鐘以上，更佳設為20分鐘以上。另一方面，加熱溫度的保持時間之上限較佳設為40分鐘以下，更佳設為30分鐘以下。Here, the lower limit of the pressure load in the lamination direction is preferably 3 kgf / cm 2 or more, and more preferably 5 kgf / cm 2 or more. On the other hand, the upper limit of the load pressure of the laminating direction is preferably set 8kgf / cm 2 or less, more preferably to 7kgf / cm 2 or less. The lower limit of the heating temperature is preferably 585 ° C or higher, and more preferably 590 ° C or higher. On the other hand, the upper limit of the heating temperature is preferably 625 ° C or lower, and more preferably 620 ° C or lower. The lower limit of the holding time of the heating temperature is preferably 15 minutes or more, and more preferably 20 minutes or more. On the other hand, the upper limit of the holding time of the heating temperature is preferably 40 minutes or less, and more preferably 30 minutes or less.

又，於本實施形態中，如上述，由於在與鋁板22、23之接合面的80%以上，形成有金屬鋁部38(氮化鋁層36)，故接合此金屬鋁部38與鋁板22、23。因此，即使為比較低溫的條件，也可強固地接合陶瓷基板30與鋁板22、23。In this embodiment, as described above, since the metal aluminum portion 38 (aluminum nitride layer 36) is formed at 80% or more of the joint surface with the aluminum plates 22 and 23, the metal aluminum portion 38 and the aluminum plate 22 are joined. ,twenty three. Therefore, even under a relatively low temperature condition, the ceramic substrate 30 and the aluminum plates 22 and 23 can be firmly bonded.

藉由如以上的步驟，製造本實施形態之絕緣電路基板10。Through the above steps, the insulated circuit board 10 of this embodiment is manufactured.

(散熱片接合步驟S04) 　　接著，在絕緣電路基板10的金屬層13之另一面側，接合散熱片51。 　　隔著焊材，層合絕緣電路基板10與散熱片51，於積層方向中加壓，同時裝入真空爐內，進行硬焊。藉此，接合絕緣電路基板10的金屬層13與散熱片51。此時，作為焊材，例如可使用厚度20～110mm的Al-Si系焊材箔，硬焊溫度較佳設定在比鋁板接合步驟S03中的硬焊溫度更低溫。(Heat Sink Bonding Step S04) Next, the heat sink 51 is bonded to the other surface side of the metal layer 13 of the insulating circuit board 10. (2) The insulating circuit board 10 and the heat sink 51 are laminated with a solder material therebetween, and they are pressurized in the lamination direction, and simultaneously loaded into a vacuum furnace for brazing. Thereby, the metal layer 13 and the heat sink 51 of the insulated circuit board 10 are joined. At this time, as the welding material, for example, an Al-Si based welding material foil having a thickness of 20 to 110 mm can be used, and the brazing temperature is preferably set to be lower than the brazing temperature in the aluminum plate joining step S03.

(LED元件接合步驟S05) 　　接著，在絕緣電路基板10的電路層12之一面，藉由焊接而接合LED元件3。 　　藉由以上之步驟，製作出如圖1所示的LED模組1。(LED Element Bonding Step S05) Next, the LED element 3 is bonded to one surface of the circuit layer 12 of the insulating circuit substrate 10 by soldering. Through the above steps, the LED module 1 shown in FIG. 1 is manufactured.

依照如以上構成之絕緣電路基板10，由於陶瓷基板30具有由氮化矽所成的陶瓷本體31與氮化鋁層36，於陶瓷本體31的玻璃相33中之與氮化鋁層36的界面側部分存在Al，故由氮化矽所成的陶瓷本體31與氮化鋁層36係強固地結合。又，由於接合陶瓷基板30的氮化鋁層36與電路層12(鋁板22)及金屬層13(鋁板23)，陶瓷基板30與電路層12及金屬層13之接合可靠性高。因此，可提供接合可靠性優異之絕緣電路基板10。According to the insulated circuit substrate 10 configured as above, since the ceramic substrate 30 has a ceramic body 31 and an aluminum nitride layer 36 made of silicon nitride, an interface with the aluminum nitride layer 36 in the glass phase 33 of the ceramic body 31 Al exists in the side portion, so the ceramic body 31 made of silicon nitride and the aluminum nitride layer 36 are strongly bonded. In addition, since the aluminum nitride layer 36 of the ceramic substrate 30 is bonded to the circuit layer 12 (aluminum plate 22) and the metal layer 13 (aluminum plate 23), the bonding reliability of the ceramic substrate 30 and the circuit layer 12 and metal layer 13 is high. Therefore, an insulated circuit board 10 having excellent bonding reliability can be provided.

再者，於本實施形態中，如圖3所示，氮化鋁層36係從陶瓷本體31側起依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層36A，與氮濃度為30原子%以上且未達50原子%，氮濃度在厚度方向中大致一定之第2氮化鋁層36B。因此，陶瓷本體31之氮化矽係進行反應而形成氮化鋁層36，由氮化矽所成的陶瓷本體31與氮化鋁層36係更強固地結合。藉此，即使對於絕緣電路基板10負荷有冷熱循環時，也能抑制陶瓷基板30與電路層12及金屬層13之接合率降低。Furthermore, in this embodiment, as shown in FIG. 3, the aluminum nitride layer 36 has, in order from the ceramic body 31 side, a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and having nitrogen in the thickness direction. The first aluminum nitride layer 36A having a sloped concentration and the second aluminum nitride layer 36B having a nitrogen concentration of 30 atomic% or more and less than 50 atomic%, and the nitrogen concentration is substantially constant in the thickness direction. Therefore, the silicon nitride system of the ceramic body 31 reacts to form the aluminum nitride layer 36, and the ceramic body 31 made of silicon nitride and the aluminum nitride layer 36 are more strongly bonded. Thereby, even when a cold and heat cycle is applied to the insulated circuit board 10, it is possible to suppress a decrease in the bonding rate of the ceramic substrate 30 with the circuit layer 12 and the metal layer 13.

又，於本實施形態中，在接合前的陶瓷基板30中，於氮化鋁層36中之與鋁板22、23的接合面形成有金屬鋁部38，此金屬鋁部38在前述接合面中的面積率為80%以上。因此，鋁板22、23與金屬鋁部38係成為鋁彼此之接合，即使設定在比較低的接合溫度，也可強固地接合鋁板22、23與陶瓷基板30。In the present embodiment, in the ceramic substrate 30 before bonding, a metal aluminum portion 38 is formed on a bonding surface of the aluminum nitride layer 36 with the aluminum plates 22 and 23, and the metal aluminum portion 38 is on the bonding surface. The area ratio is over 80%. Therefore, the aluminum plates 22 and 23 and the metal aluminum portion 38 are joined to each other by aluminum, and the aluminum plates 22 and 23 and the ceramic substrate 30 can be firmly joined even if a relatively low joining temperature is set.

再者，依照本實施形態的絕緣電路基板10之製造方法，具備：在由氮化矽所成的陶瓷本體31之表面，形成厚度20μm以下的鋁層41之鋁層形成步驟S01；與，將形成有鋁層41的陶瓷本體31加熱到構成鋁層41的鋁或鋁合金的固相線溫度以上之溫度，形成氮化鋁層36之氮化鋁層形成步驟S02。因此，於此氮化鋁層形成步驟S02中，Al侵入陶瓷本體31的玻璃相33中，同時氮化矽相32的Si3 N4 係分解，所生成的氮(N)與鋁層41之鋁(Al)係反應，可形成氮化鋁層36。 　　而且，由於具備隔著氮化鋁層36(金屬鋁部38)接合鋁板22、23之鋁板接合步驟S03，可容易地接合陶瓷基板30與鋁板22、23。Furthermore, the method for manufacturing an insulated circuit board 10 according to this embodiment includes: an aluminum layer forming step S01 in which an aluminum layer 41 having a thickness of 20 μm or less is formed on the surface of the ceramic body 31 made of silicon nitride; and, The ceramic body 31 on which the aluminum layer 41 is formed is heated to a temperature above the solidus temperature of the aluminum or aluminum alloy constituting the aluminum layer 41 to form an aluminum nitride layer forming step S02 of the aluminum nitride layer 36. Therefore, in this step of forming an aluminum nitride layer S02, Al penetrates into the glass phase 33 of the ceramic body 31, and at the same time, the Si 3 N 4 series of the silicon nitride phase 32 is decomposed, and the generated nitrogen (N) and the aluminum layer 41 The aluminum (Al) system reacts to form the aluminum nitride layer 36. Furthermore, since the aluminum plate joining step S03 for joining the aluminum plates 22 and 23 via the aluminum nitride layer 36 (metal aluminum portion 38) is provided, the ceramic substrate 30 and the aluminum plates 22 and 23 can be easily joined.

(第2實施形態) 　　接著，對於本發明之第2實施形態，參照圖7至圖10進行說明。再者，於與第1實施形態相同的構件，附有相同的符號，省略詳細的說明。 　　本實施形態之陶瓷/鋁接合體係藉由接合作為陶瓷構件的陶瓷基板130與作為鋁構件的鋁板122(電路層112)而構成之絕緣電路基板110。(Second Embodiment) Next, a second embodiment of the present invention will be described with reference to Figs. 7 to 10. In addition, the same components as those in the first embodiment are denoted by the same reference numerals, and detailed descriptions are omitted.陶瓷 The ceramic / aluminum bonding system of this embodiment is an insulated circuit board 110 configured by bonding a ceramic substrate 130 as a ceramic member and an aluminum plate 122 (circuit layer 112) as an aluminum member.

圖7中，顯示本發明之第2實施形態的絕緣電路基板110及使用此絕緣電路基板110之LED模組101。 　　此LED模組101具備：絕緣電路基板110，與在此絕緣電路基板110之一側(圖7中上側)之面，隔著接合層2接合之LED元件3。FIG. 7 shows an insulated circuit board 110 and an LED module 101 using the insulated circuit board 110 according to the second embodiment of the present invention. LED This LED module 101 includes an insulating circuit substrate 110 and an LED element 3 bonded to a surface on one side (upper side in FIG. 7) of the insulating circuit substrate 110 via a bonding layer 2.

本實施形態之絕緣電路基板110係如圖7所示，具備陶瓷基板130與配設於此陶瓷基板130之一面(圖7中上面)的電路層112。As shown in FIG. 7, the insulated circuit substrate 110 of this embodiment includes a ceramic substrate 130 and a circuit layer 112 disposed on one surface (upper surface in FIG. 7) of the ceramic substrate 130.

陶瓷基板130係以絕緣性高的Si3 N4 (氮化矽)所構成，其厚度係設定在0.2～1.5mm之範圍內，本實施形態中設定在0.32mm。 　　此處，本實施形態中之陶瓷基板130係如圖8所示，具有：由氮化矽所成的陶瓷本體131，及在陶瓷本體131中之與電路層112之接合面所形成的氧化鋁層136。The ceramic substrate 130 is made of Si 3 N 4 (silicon nitride) with high insulation properties, and its thickness is set in the range of 0.2 to 1.5 mm. In this embodiment, it is set to 0.32 mm. Here, as shown in FIG. 8, the ceramic substrate 130 in this embodiment includes a ceramic body 131 made of silicon nitride and an alumina formed on a joint surface of the ceramic body 131 and the circuit layer 112. Layer 136.

電路層112係如圖10所示，藉由在陶瓷基板130之一面(圖10中上面)接合由鋁或鋁合金所成的鋁板122(鋁構件)而形成。作為構成電路層112的鋁板122(鋁構件)，例如較宜使用純度為99質量%以上的鋁(2N鋁)、純度99.9質量%以上的鋁或純度為99.99質量%以上的鋁等之軋製板，於本實施形態中，使用純度為99質量%以上的鋁(2N鋁)。再者，電路層112之厚度例如設定在0.05mm以上0.8mm以下之範圍內，本實施形態中設定在0.1mm。The circuit layer 112 is formed by bonding an aluminum plate 122 (aluminum member) made of aluminum or an aluminum alloy to one surface (the upper surface in FIG. 10) of the ceramic substrate 130 as shown in FIG. 10. As the aluminum plate 122 (aluminum member) constituting the circuit layer 112, for example, aluminum (2N aluminum) having a purity of 99% by mass or more, aluminum having a purity of 99.9% by mass or more, or aluminum having a purity of 99.99% by mass or more is preferably used. In this embodiment, aluminum (2N aluminum) having a purity of 99% by mass or more is used. The thickness of the circuit layer 112 is set in a range of, for example, 0.05 mm or more and 0.8 mm or less, and is set to 0.1 mm in this embodiment.

此處，圖8中顯示陶瓷基板130與電路層112之接合界面的放大說明圖。 　　陶瓷基板130係如上述成為一種構造，其具有由氮化矽所成的陶瓷本體131及在此陶瓷本體131中之與電路層112之接合面所形成的氧化鋁層136，接合此氧化鋁層136與電路層112。 　　此處，氧化鋁層136之厚度較佳設為4nm以上100nm以下之範圍內。Here, FIG. 8 is an enlarged explanatory view showing a bonding interface between the ceramic substrate 130 and the circuit layer 112. The ceramic substrate 130 has a structure as described above, and has a ceramic body 131 made of silicon nitride and an aluminum oxide layer 136 formed on the ceramic body 131 and a bonding surface with the circuit layer 112, and the aluminum oxide layer is bonded. 136 与 电路 层 112。 With the circuit layer 112. Here, the thickness of the alumina layer 136 is preferably set in a range of 4 nm to 100 nm.

而且，陶瓷本體131係如圖8所示，具備氮化矽相132與玻璃相133，於此玻璃相133之內部存在Al。玻璃相133係因燒結氮化矽的原料時所用的燒結助劑而形成者，如圖8所，存在於氮化矽相132彼此之粒界部分。Further, as shown in FIG. 8, the ceramic body 131 includes a silicon nitride phase 132 and a glass phase 133, and Al is present inside the glass phase 133. The glass phase 133 is formed by a sintering aid used when sintering the raw material of silicon nitride, and as shown in FIG. 8, it exists in the grain boundary portions of the silicon nitride phases 132.

此處，於本實施形態中，當分析接合界面時，將Al、Si、O、N之合計值當作100原子%時，將Si未達15原子%且O為3原子%以上25原子%以下之範圍內的區域當作玻璃相133。 　　此玻璃相133中存在的Al量，當將Al、Si、O、N之合計值當作100原子%時，較佳為35原子%以上65原子%以下之範圍內。Here, in the present embodiment, when the joint interface is analyzed, when the total value of Al, Si, O, and N is taken as 100 atomic%, Si is less than 15 atomic% and O is 3 atomic% or more and 25 atomic%. The area within the following range is regarded as the glass phase 133. The amount of Al present in the glass phase 133 is preferably within a range of 35 atomic% to 65 atomic% when the total value of Al, Si, O, and N is taken as 100 atomic%.

接著，對於上述本實施形態的絕緣電路基板110之製造方法，參照圖9及圖10進行說明。Next, a method for manufacturing the insulated circuit board 110 according to the present embodiment will be described with reference to FIGS. 9 and 10.

(鋁層形成步驟S101) 　　準備由氮化矽所成的板材(陶瓷本體131)，於陶瓷本體131之表面，形成由厚度20μm以下的鋁或鋁合金所成的鋁層141。本實施形態中，鋁層141係以純度99質量%以上的純鋁所構成者。(Aluminum layer forming step S101) (1) A plate (ceramic body 131) made of silicon nitride is prepared. On the surface of the ceramic body 131, an aluminum layer 141 made of aluminum or an aluminum alloy having a thickness of 20 μm or less is formed. In this embodiment, the aluminum layer 141 is composed of pure aluminum having a purity of 99% by mass or more.

(氮化鋁層形成步驟S102) 　　接著，對於形成有鋁層141的陶瓷本體131，以構成鋁層141的鋁或鋁合金的固相線溫度以上之溫度進行熱處理，形成氮化鋁層136a。 　　此處，於進行熱處理之際，為了抑制經熔融的鋁變成球狀，較佳為以碳板壓住鋁層141之表面。又，為了抑制蒸發等，熱處理溫度之上限較佳設為750℃以下。 　　再者，鋁層141不一定要全部變成氮化鋁層136a，可一部分的鋁層141作為金屬鋁部存在。(Aluminum nitride layer forming step S102) Next, the ceramic body 131 on which the aluminum layer 141 is formed is heat-treated at a temperature higher than the solidus temperature of the aluminum or aluminum alloy constituting the aluminum layer 141 to form an aluminum nitride layer 136a. Here, in order to prevent the molten aluminum from becoming spherical when the heat treatment is performed, it is preferable to press the surface of the aluminum layer 141 with a carbon plate. In order to suppress evaporation and the like, the upper limit of the heat treatment temperature is preferably 750 ° C or lower. In addition, the aluminum layer 141 does not necessarily have to be entirely the aluminum nitride layer 136a, and a part of the aluminum layer 141 may exist as a metal aluminum portion.

(氧化處理步驟S103) 　　接著，將形成有氮化鋁層136a的陶瓷本體131裝入氣氛爐中進行氧化處理，形成氧化鋁層136。此時，上述的金屬鋁部亦被氧化，成為氧化鋁層136之一部分。 　　於氧化處理步驟S103中，在露點-20℃以下之乾燥空氣環境中，於處理溫度：1100℃以上1300℃以下之範圍內，上述的處理溫度之保持時間：1分鐘以上30分鐘以下之範圍內的條件下，實施氮化鋁層136a的氧化處理。(Oxidation process step S103) Next, the ceramic body 131 having the aluminum nitride layer 136a formed therein is placed in an atmosphere furnace and subjected to an oxidation treatment to form an aluminum oxide layer 136. At this time, the above-mentioned metal aluminum portion is also oxidized and becomes a part of the aluminum oxide layer 136. In the oxidation treatment step S103, in a dry air environment with a dew point of -20 ° C or lower, in a range of processing temperature: 1100 ° C or higher and 1300 ° C or lower, the holding time of the above processing temperature: 1 minute or more and 30 minutes or less Under the conditions, the aluminum nitride layer 136a is oxidized.

此處，環境的露點較佳設為-30℃以下，更佳設為-40℃以下。 　　又，氧化處理步驟S103中的處理溫度之下限較佳設為1130℃以上，更佳設為1180℃以上。另一方面，氧化處理步驟S103中的處理溫度之上限較佳設為1250℃以下，更佳設為1200℃以下。 　　再者，氧化處理步驟S103中的處理溫度之保持時間之下限較佳設為3分鐘以上，更佳設為5分鐘以上。另一方面，處理溫度的保持時間之上限較佳設為20分鐘以下，更佳設為10分鐘以下。 　　還有，於此氧化處理步驟S103中，氮化鋁層136a幾乎全部變成氧化鋁層136。The dew point of the environment is preferably -30 ° C or lower, and more preferably -40 ° C or lower. In addition, the lower limit of the processing temperature in the oxidation processing step S103 is preferably set to 1130 ° C or higher, and more preferably 1180 ° C or higher. On the other hand, the upper limit of the processing temperature in the oxidation treatment step S103 is preferably 1250 ° C or lower, and more preferably 1200 ° C or lower. Furthermore, the lower limit of the holding time of the processing temperature in the oxidation treatment step S103 is preferably set to 3 minutes or more, and more preferably set to 5 minutes or more. On the other hand, the upper limit of the holding time of the processing temperature is preferably 20 minutes or less, and more preferably 10 minutes or less. In addition, in this oxidation processing step S103, the aluminum nitride layer 136a is almost completely changed to the aluminum oxide layer 136.

(鋁板接合步驟S104) 　　接著，隔著陶瓷基板130的氧化鋁層136，接合成為電路層112的鋁板122。此處，作為接合手段，使用焊材時，可適宜選擇固相擴散接合、暫態液相接合(TLP)等之既有的手段。於本實施形態中，如圖10所示，使用Al-Si系焊材126進行接合。(Aluminum plate bonding step S104) Next, the aluminum plate 122 which becomes the circuit layer 112 is bonded via the alumina layer 136 of the ceramic substrate 130. Here, when a welding material is used as a joining means, an existing means such as solid phase diffusion joining, transient liquid phase joining (TLP), etc. can be appropriately selected. In this embodiment, as shown in FIG. 10, Al-Si based welding material 126 is used for joining.

具體而言，隔著Al-Si系的焊材126，層合陶瓷基板130與鋁板122，於積層方向以1kgf/cm2 以上10kgf/cm2 以下(0.098MPa以上0.980MPa以下)之範圍加壓之狀態下裝入真空加熱爐中，接合陶瓷基板130與鋁板122，形成電路層112。 　　此時的接合條件係真空條件為10-6 Pa以上10-3 Pa以下之範圍內，加熱溫度為580℃以上630℃以下之範圍內，上述加熱溫度的保持時間係設定在10分鐘以上45分鐘以下之範圍內。Specifically, the ceramic substrate 130 and the aluminum plate 122 are laminated through an Al-Si based welding material 126, and pressurized in a lamination direction in a range of 1 kgf / cm 2 to 10 kgf / cm 2 (0.098 MPa to 0.980 MPa). In this state, it was put into a vacuum heating furnace, and the ceramic substrate 130 and the aluminum plate 122 were bonded to form a circuit layer 112. The joining conditions at this time are within a vacuum range of 10 -6 Pa to 10 -3 Pa, and a heating temperature of 580 ° C to 630 ° C. The holding time of the heating temperature is set to 10 minutes to 45 minutes. Within the range below.

藉由如以上之步驟，製造本實施形態之絕緣電路基板110。Through the above steps, the insulated circuit board 110 of this embodiment is manufactured.

(LED元件接合步驟S105) 　　接著，在絕緣電路基板110的電路層112之一面，藉由焊接而接合LED元件3。 　　藉由以上之步驟，製作出如圖7所示的LED模組101。(LED Element Bonding Step S105) Next, the LED element 3 is bonded to one surface of the circuit layer 112 of the insulating circuit substrate 110 by soldering. Through the above steps, the LED module 101 shown in FIG. 7 is manufactured.

依照如以上構成之絕緣電路基板110及LED模組101，由於陶瓷基板130具有由氮化矽所成的陶瓷本體131與氧化鋁層136，於陶瓷本體131與氧化鋁層136之界面中，在陶瓷本體131之玻璃相133中存在Al，故由氮化矽所成的陶瓷本體131與氧化鋁層136係強固地結合。又，由於接合陶瓷基板130的氧化鋁層136與電路層112(鋁板122)，陶瓷基板130與電路層112之接合可靠性高。因此，可提供接合可靠性優異之絕緣電路基板110。According to the insulated circuit substrate 110 and the LED module 101 configured as above, since the ceramic substrate 130 has a ceramic body 131 and an alumina layer 136 made of silicon nitride, at the interface between the ceramic body 131 and the alumina layer 136, Al exists in the glass phase 133 of the ceramic body 131, so the ceramic body 131 made of silicon nitride and the alumina layer 136 are strongly bonded. In addition, since the alumina layer 136 and the circuit layer 112 (aluminum plate 122) of the ceramic substrate 130 are bonded, the bonding reliability of the ceramic substrate 130 and the circuit layer 112 is high. Therefore, an insulated circuit board 110 having excellent bonding reliability can be provided.

再者，依照本實施形態的絕緣電路基板110之製造方法，具備：在由氮化矽所成的陶瓷本體131之表面，形成厚度20μm以下的鋁層141之鋁層形成步驟S101，將形成有鋁層141的陶瓷本體131加熱到構成鋁層141之鋁或鋁合金的固相線溫度以上之溫度，形成氮化鋁層136a之氮化鋁層形成步驟S102，及對於形成有氮化鋁層136a的陶瓷本體131，進行氧化處理，形成氧化鋁層136之氧化處理步驟S103。因此，於氮化鋁層形成步驟S102中，Al侵入瓷本體131的玻璃相133中，同時氮化矽相132的氮(N)與鋁層141的鋁(Al)係反應，而形成氮化鋁層136a，藉由氧化處理步驟S103，可形成氧化鋁層136。 　　而且，由於具備隔著氧化鋁層136接合鋁板122之鋁板接合步驟S104，可容易地接合陶瓷基板130與鋁板122。In addition, the method for manufacturing an insulated circuit board 110 according to this embodiment includes: an aluminum layer forming step S101 in which an aluminum layer 141 having a thickness of 20 μm or less is formed on the surface of a ceramic body 131 made of silicon nitride; The ceramic body 131 of the aluminum layer 141 is heated to a temperature above the solidus temperature of the aluminum or aluminum alloy constituting the aluminum layer 141 to form an aluminum nitride layer forming step S102 of the aluminum nitride layer 136a, and for forming the aluminum nitride layer The ceramic body 131 of 136a is subjected to an oxidation treatment to form an oxidation treatment step S103 of the alumina layer 136. Therefore, in the aluminum nitride layer forming step S102, Al penetrates into the glass phase 133 of the porcelain body 131, and at the same time, nitrogen (N) of the silicon nitride phase 132 reacts with the aluminum (Al) system of the aluminum layer 141 to form nitride. In the aluminum layer 136a, an aluminum oxide layer 136 can be formed by the oxidation treatment step S103. In addition, since the aluminum plate joining step S104 of joining the aluminum plate 122 via the aluminum oxide layer 136 is provided, the ceramic substrate 130 and the aluminum plate 122 can be easily joined.

以上，說明本發明之實施形態，惟本發明不受此所限定，在不脫離其發明的技術思想之範圍內，可適宜變更。As mentioned above, although embodiment of this invention was described, this invention is not limited to this, It can change suitably in the range which does not deviate from the technical thought of the invention.

例如，於本實施形態中，說明在絕緣電路基板上搭載LED元件，構成LED模組者，惟不受此所限定。例如，亦可在絕緣電路基板的電路層上，搭載功率半導體元件而構成功率模組，也可在絕緣電路基板的電路層上，搭載熱電元件而構成熱電模組。For example, in this embodiment, it is described that a LED module is mounted on an insulated circuit board to constitute an LED module, but it is not limited to this. For example, a power module may be configured by mounting a power semiconductor element on a circuit layer of an insulated circuit board, or a thermoelectric module may be configured by mounting a thermoelectric element on a circuit layer of an insulated circuit board.

又，於本實施形態中，說明使用焊材接合陶瓷基板與鋁板者，惟不受此所限定，亦可藉由固相擴散接合而接合。再者，亦可使Cu、Si等的添加元素固著於接合面，使此等之添加元素擴散，藉由熔融・凝固的暫態液相接合法(TLP)進行接合。另外，亦可使接合界面成為半熔融狀態而接合。In addition, in this embodiment, it is described that a ceramic substrate and an aluminum plate are bonded using a solder material, but it is not limited to this, and may be bonded by solid-phase diffusion bonding. Further, the additive elements such as Cu and Si may be fixed to the bonding surface, the additive elements may be diffused, and the bonding may be performed by a melting and solidifying transient liquid phase bonding method (TLP). In addition, the joining interface may be joined in a semi-fused state.

再者，作為形成在陶瓷本體的鋁層，雖然舉出以純度99質量%以上的鋁所構成者為例而說明，惟不受此所限定，亦可為其他的鋁或鋁合金。此處，使用含Mg的鋁合金作為鋁層時，在氮化鋁層及氧化鋁層中存在Mg。還有，由於Mg為活性元素，而促進氮化矽與鋁層之反應，以充分的厚度形成氮化鋁層(及將此予氧化處理而得的氧化鋁層)，更強固地接合陶瓷本體與氮化鋁層(氧化鋁層)。 [實施例]In addition, although the aluminum layer formed on the ceramic body is described by taking as an example a structure composed of aluminum having a purity of 99% by mass or more, it is not limited thereto, and it may be other aluminum or aluminum alloy. Here, when an aluminum alloy containing Mg is used as the aluminum layer, Mg is present in the aluminum nitride layer and the aluminum oxide layer. In addition, since Mg is an active element, the reaction between the silicon nitride and the aluminum layer is promoted, and an aluminum nitride layer (and an alumina layer obtained by the pre-oxidation treatment) is formed with a sufficient thickness to more firmly join the ceramic body. With aluminum nitride layer (alumina layer). [Example]

以下，說明為了確認本發明之效果而進行的確認實驗之結果。The results of confirmation experiments performed to confirm the effects of the present invention will be described below.

(實施例1) 　　準備由氮化矽所成的陶瓷板(40mm×40mm×0.32mmt)，以上述實施形態中記載之方法，在陶瓷板上形成氮化鋁層及氧化鋁層。於實施例1～9中，在表1所示的條件下形成氮化鋁層。於實施例11～12中，在表2所示的條件下形成氧化鋁層。再者，於習知例中，不形成氮化鋁層及氧化鋁層。 　　然後，對於所得之陶瓷基板，以表3、4中所示的方法接合鋁板，製造鋁/陶瓷接合體(絕緣電路基板)。(Example 1) (1) A ceramic plate (40 mm × 40 mm × 0.32 mmt) made of silicon nitride was prepared, and an aluminum nitride layer and an aluminum oxide layer were formed on the ceramic plate by the method described in the above embodiment. In Examples 1 to 9, an aluminum nitride layer was formed under the conditions shown in Table 1. In Examples 11 to 12, an alumina layer was formed under the conditions shown in Table 2. Furthermore, in the conventional example, an aluminum nitride layer and an aluminum oxide layer are not formed. Then, an aluminum plate was bonded to the obtained ceramic substrate by the method shown in Tables 3 and 4 to produce an aluminum / ceramic bonded body (insulated circuit substrate).

還有，於表3、4中，「硬焊」係使用Al-Si系焊材(Si：5mass%，厚度7μm)進行接合。 　　表3、4中的「固相擴散」係藉由固相擴散接合來接合鋁板與陶瓷基板。 　　表3、4中的「TLP」係使Cu以0.2mg/cm2 固著於鋁板之接合面，藉由暫態液相接合法(TLP)進行接合。 　　再者，表3、4之鋁板接合步驟的環境為2.0×104 Pa之真空環境。In Tables 3 and 4, "hard soldering" was performed using an Al-Si based welding material (Si: 5 mass%, thickness: 7 µm). "Solid-phase diffusion" in Tables 3 and 4 refers to joining an aluminum plate and a ceramic substrate by solid-phase diffusion bonding. The "TLP" in Tables 3 and 4 is a method in which Cu is fixed to a joint surface of an aluminum plate at 0.2 mg / cm 2 and joined by a transient liquid phase joining method (TLP). The environment of the aluminum plate bonding step in Tables 3 and 4 was a vacuum environment of 2.0 × 10 4 Pa.

對於如上述所得之鋁/陶瓷接合體(絕緣電路基板)，如以下地評價。The aluminum / ceramic bonded body (insulated circuit board) obtained as described above was evaluated as follows.

(氮化鋁層、氧化鋁層、玻璃相中有無Al之確認) 　　於本發明例1～9中，在氮化鋁層形成步驟S02後，於本發明例11～18中，在氧化處理步驟S103後，使用穿透型電子顯微鏡(FEI公司製Titan ChemiSTEM，加速電壓200kV)，觀察陶瓷基板之剖面，確認有無氮化鋁層、有無氧化鋁層、玻璃相中有無Al。再者，於習知例中，觀察接合鋁板之前的陶瓷基板。 　　再者，玻璃相係將Al、Si、O、N之合計值當作100原子%時，Si未達15原子%且O為3原子%以上25原子%以下之範圍內的區域。表1及表2中顯示評價結果。又，圖11中顯示本發明例1之觀察結果。(Confirmation of presence of Al in aluminum nitride layer, aluminum oxide layer, and glass phase) In Examples 1 to 9 of the present invention, after the aluminum nitride layer forming step S02, in Examples 11 to 18 of the present invention, in the oxidation treatment step After S103, a transmission electron microscope (Titan ChemiSTEM manufactured by FEI Corp., with an acceleration voltage of 200 kV) was used to observe the cross section of the ceramic substrate to confirm the presence of an aluminum nitride layer, the presence of an aluminum oxide layer, and the presence of Al in the glass phase. In the conventional example, the ceramic substrate before the aluminum plate was bonded was observed. In addition, the glass phase is a region in which the total value of Al, Si, O, and N is 100 atomic%, Si is not more than 15 atomic%, and O is within the range of 3 atomic% to 25 atomic%. The evaluation results are shown in Tables 1 and 2. Moreover, the observation result of Example 1 of this invention is shown in FIG.

(氮化鋁層之面積率) 　　氮化鋁層之面積率係在形成氮化鋁層後(氮化鋁層形成步驟S02)，從上面使用EPMA(日本電子股份有限公司製JXA-8539F)，觀察陶瓷本體。此處，由於在金屬鋁部陶瓷本體之間存在氮化鋁層，金屬鋁部之面積與氮化鋁層之面積係視為相同，將(金屬鋁部之面積/鋁層之面積×100)當作氮化鋁層之面積率(%)。表1中顯示此結果。(Area ratio of the aluminum nitride layer) The area ratio of the aluminum nitride layer is after the aluminum nitride layer is formed (the aluminum nitride layer forming step S02), and EPMA (JXA-8539F manufactured by Japan Electronics Co., Ltd.) is used from above. Observe the ceramic body. Here, since the aluminum nitride layer exists between the ceramic body of the metal aluminum portion, the area of the metal aluminum portion and the area of the aluminum nitride layer are considered to be the same. (Area of the metal aluminum portion / area of the aluminum layer × 100) The area ratio (%) of the aluminum nitride layer. This result is shown in Table 1.

(冷熱循環試驗) 　　使用冷熱衝擊試驗機(ESPEC股份有限公司製TSA-72ES)，對於絕緣電路基板，於氣相中，實施以-40℃5分鐘與以175℃5分鐘的800循環。 　　然後，如以下地評價陶瓷基板與鋁板之接合率。 　　再者，接合率之評價係在冷熱循環試驗前(初期接合率)與冷熱循環試驗後(循環後接合率)進行。(Cold-Heat Cycle Test) Using a cold-heat shock tester (TSA-72ES, manufactured by ESPEC Co., Ltd.), 800 cycles of -40 ° C for 5 minutes and 175 ° C for 5 minutes were performed on an insulated circuit board in a gas phase. Then, the joint ratio between the ceramic substrate and the aluminum plate was evaluated as follows. In addition, the evaluation of the joining rate was performed before the cold-heat cycle test (initial joining rate) and after the cold-heat cycle test (post-cycle joining rate).

接合率之評價係對於絕緣電路基板，對於陶瓷基板與鋁板(電路層及金屬層)之界面的接合率，使用超音波探傷裝置(股份有限公司日立Power Solutions製Fine SAT200)進行評價，由以下之式算出接合率。 　　此處，所謂的初期接合面積，就是在接合前應接合的面積，即本實施例中為電路層及金屬層之面積(37mm×37mm)。 　　(接合率)={(初期接合面積)-(剝離面積)}/(初期接合面積)×100 　　於將超音波探傷像予以二值化處理的影像中，由於剝離係以接合部內的白色部表示，故將此白色部的面積當作剝離面積。表3、4中記載此等之結果。The evaluation of the joint rate is based on the evaluation of the joint rate of the interface between the insulated circuit board and the ceramic substrate and the aluminum plate (circuit layer and metal layer) using an ultrasonic flaw detection device (Fine SAT200, manufactured by Hitachi Power Solutions). The joint rate is calculated by the formula. Here, the so-called initial bonding area is the area to be bonded before bonding, that is, the area of the circuit layer and the metal layer (37 mm × 37 mm) in this embodiment. (Joint rate) = {(Initial joint area)-(Peel area)} / (Initial joint area) × 100 In the image where the ultrasonic flaw detection image is binarized, the peel is shown by the white part inside the joint. , So the area of this white part is taken as the peeling area. These results are shown in Tables 3 and 4.

在由氮化矽所成的陶瓷板之與鋁板的接合面，未形成氮化鋁層或氧化鋁層之習知例中，在冷熱循環後，接合率大幅降低。 　　相對於其，在陶瓷板之與鋁板的接合面形成氮化鋁層，於陶瓷板的玻璃相中存在Al之本發明例1-9，以及在陶瓷板之與鋁板之接合面形成氧化鋁層，於陶瓷板的玻璃相中存在Al之本發明例11-19中，冷熱循環前後的接合率之變化小。In the conventional example in which the aluminum nitride layer or the aluminum oxide layer is not formed on the joint surface between the ceramic plate made of silicon nitride and the aluminum plate, the joint ratio is significantly reduced after the heat and cold cycles. In contrast, an aluminum nitride layer is formed on the joint surface of the ceramic plate and the aluminum plate, Examples 1-9 of the present invention in which Al is present in the glass phase of the ceramic plate, and an aluminum oxide layer is formed on the joint surface of the ceramic plate and the aluminum plate. In Examples 11-19 of the present invention in which Al is present in the glass phase of the ceramic plate, the change in the bonding ratio before and after the cold and hot cycles is small.

又，如本發明例1～9、11～19中所示，不論鋁板的接合方式為何，在硬焊、固相擴散接合、TLP的任一接合方式中，皆確認接合體的冷熱循環後之接合可靠性升高。 　　再者，如本發明例1～9、11～19中所示，不論鋁層及鋁板之組成為何，在純鋁及各種鋁合金，皆確認接合體的冷熱循環後之接合可靠性升高。 　　另外，如表1及表3中所示，確認隨著氮化鋁層之面積率變高，冷熱循環負荷時之接合可靠性升高。In addition, as shown in Examples 1 to 9 and 11 to 19 of the present invention, regardless of the bonding method of the aluminum plates, the bonding body was confirmed to be cold and hot after any of the bonding methods such as brazing, solid phase diffusion bonding, and TLP. Increased joint reliability. Furthermore, as shown in Examples 1 to 9 and 11 to 19 of the present invention, regardless of the composition of the aluminum layer and the aluminum plate, it was confirmed that the reliability of the joint after the hot and cold cycles of the joint was increased in pure aluminum and various aluminum alloys. In addition, as shown in Tables 1 and 3, it was confirmed that as the area ratio of the aluminum nitride layer becomes higher, the bonding reliability at the time of a cooling and heating cycle load is increased.

(實施例2) 　　接著，準備由氮化矽所成的陶瓷板(40mm×40mm×0.32mmt)，以上述實施形態中記載之方法，在陶瓷板上形成氮化鋁層。於實施例21～24中，在表5所示之條件下形成氮化鋁層。 　　還有，於比較例中，在陶瓷板之表面，藉由濺鍍將氮化鋁層予以成膜。 　　然後，對於所得之陶瓷基板，使用Al-Si系焊材(Si：5mass%，厚度7μm)，於接合溫度620℃、保持時間30min、加壓壓力0.098MPa之條件下，接合純度99.99質量%以上(4N)之鋁板(厚度20μm)，製造鋁/陶瓷接合體(絕緣電路基板)。Example 2 Next, a ceramic plate (40 mm × 40 mm × 0.32 mmt) made of silicon nitride was prepared, and an aluminum nitride layer was formed on the ceramic plate by the method described in the above embodiment. In Examples 21 to 24, an aluminum nitride layer was formed under the conditions shown in Table 5. In addition, in the comparative example, an aluminum nitride layer was formed on the surface of the ceramic plate by sputtering. Then, using the obtained ceramic substrate, using Al-Si solder material (Si: 5mass%, thickness: 7 μm), under the conditions of a bonding temperature of 620 ° C., a holding time of 30 minutes, and a pressure of 0.098 MPa, the bonding purity was 99.99% by mass or more (4N) aluminum plate (thickness: 20 μm) to produce an aluminum / ceramic bonded body (insulated circuit board).

對於如上述所得之鋁/陶瓷接合體(絕緣電路基板)，與實施例1同樣地，確認有無氮化鋁層、玻璃相中有無Al、氮化鋁層之面積率、冷熱循環負荷前後之接合率。表5中顯示評價結果。The aluminum / ceramic joint (insulated circuit board) obtained as described above was checked for the presence or absence of an aluminum nitride layer, the presence or absence of Al in the glass phase, the area ratio of the aluminum nitride layer, and the bonding before and after the cooling cycle in the same manner as in Example 1. rate. Table 5 shows the evaluation results.

在由氮化矽所成的陶瓷板之表面，藉由濺鍍而成膜有氮化鋁層之比較例中，未形成氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層。又，於陶瓷本體之玻璃相中看不到Al。而且，冷熱循環負荷後之接合率大幅降低。On the surface of a ceramic plate made of silicon nitride, in a comparative example in which an aluminum nitride layer was formed by sputtering, a nitrogen concentration of 50 atomic% or more and 80 atomic% or less was not formed, and nitrogen was present in the thickness direction. The concentration of the first aluminum nitride layer is inclined. Also, Al was not seen in the glass phase of the ceramic body. In addition, the bonding rate after a hot and cold cycle load is greatly reduced.

相對於其，於氧化鋁層具有氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層的本發明例21-24中，冷熱循環前後的接合率之變化小。In contrast, the first aluminum nitride layer having a nitrogen concentration of 50 atomic% or more and 80 atomic% or less in the alumina layer and a slope of the nitrogen concentration in the thickness direction, and a nitrogen concentration of 30 atomic% or more and less than 50 In Examples 21 to 24 of the present invention, the atomic% second aluminum nitride layer has a small change in the bonding ratio before and after the cooling and heating cycle.

根據以上，依照本發明例，藉由在由氮化矽(Si3 N4 )所成的陶瓷構件之接合面，形成氮化鋁層或氧化鋁層，確認可提供在鋁構件不熔融下，以高可靠性接合陶瓷構件與鋁構件之陶瓷/鋁接合體。 [產業上的利用可能性]Based on the above, according to the example of the present invention, by forming an aluminum nitride layer or an aluminum oxide layer on a joint surface of a ceramic member made of silicon nitride (Si 3 N 4 ), it is confirmed that the aluminum member can be provided without melting the aluminum member. A ceramic / aluminum bonded body that joins ceramic members and aluminum members with high reliability. [Industrial availability]

依照本發明，可提供在鋁構件不熔融下，以高可靠性與由氮化矽(Si3 N4 )所成的陶瓷構件接合之陶瓷/鋁接合體。According to the present invention, it is possible to provide a ceramic / aluminum bonded body that is bonded to a ceramic member made of silicon nitride (Si 3 N 4 ) with high reliability without melting the aluminum member.

1、101‧‧‧LED模組1.101‧‧‧LED Module

10、110‧‧‧絕緣電路基板(陶瓷/鋁接合體)10, 110‧‧‧ insulated circuit board (ceramic / aluminum joint)

12、112‧‧‧電路層(鋁板、鋁構件)12, 112‧‧‧Circuit layer (aluminum plate, aluminum member)

13‧‧‧金屬層(鋁板、鋁構件)13‧‧‧Metal layer (aluminum plate, aluminum member)

30、130‧‧‧陶瓷基板(陶瓷構件)30, 130‧‧‧ceramic substrate (ceramic component)

31、131‧‧‧陶瓷本體31, 131‧‧‧ceramic body

32、132‧‧‧氮化矽相32, 132‧‧‧ Silicon nitride phase

33、133‧‧‧玻璃相33, 133‧‧‧ glass phase

36‧‧‧氮化鋁層36‧‧‧Aluminum nitride layer

36A‧‧‧第1氮化鋁層36A‧‧‧The first aluminum nitride layer

36B‧‧‧第2氮化鋁層36B‧‧‧The second aluminum nitride layer

38‧‧‧金屬鋁部38‧‧‧Metal and Aluminum Department

136‧‧‧氧化鋁層136‧‧‧ alumina layer

圖1係顯示使用本發明之第1實施形態的陶瓷/鋁接合體(絕緣電路基板)之LED模組之剖面圖。 　　圖2係本發明之第1實施形態的陶瓷/鋁接合體(絕緣電路基板)之陶瓷構件(陶瓷基板)與鋁構件(鋁板)的接合界面之模型圖。 　　圖3係本發明之第1實施形態的陶瓷/鋁接合體(絕緣電路基板)中之氮化鋁層之放大說明圖。 　　圖4係本發明之第1實施形態的陶瓷/鋁接合體(絕緣電路基板)中之接合前的陶瓷構件(陶瓷基板)之放大說明圖。 　　圖5係顯示本發明之第1實施形態的陶瓷/鋁接合體(絕緣電路基板)之製造方法之流程圖。 　　圖6係顯示本發明之第1實施形態的陶瓷/鋁接合體(絕緣電路基板)之製造方法之說明圖。 　　圖7係顯示使用本發明之第2實施形態的陶瓷/鋁接合體(絕緣電路基板)之LED模組之剖面圖。 　　圖8係本發明之第2實施形態的陶瓷/鋁接合體(絕緣電路基板)之陶瓷構件(陶瓷基板)與鋁構件(鋁板)的接合界面之模型圖。 　　圖9係顯示本發明之第2實施形態的陶瓷/鋁接合體(絕緣電路基板)之製造方法之流程圖。 　　圖10係顯示本發明之第2實施形態的陶瓷構件(陶瓷基板)之製造方法之說明圖。 　　圖11係本發明例1之陶瓷/鋁接合體(絕緣電路基板)中的陶瓷構件(陶瓷基板)與鋁構件(鋁板)的接合界面之元素映像圖。FIG. 1 is a cross-sectional view showing an LED module using a ceramic / aluminum bonded body (insulated circuit board) according to a first embodiment of the present invention. FIG. 2 is a model diagram of a bonding interface between a ceramic member (ceramic substrate) and an aluminum member (aluminum plate) of the ceramic / aluminum bonded body (insulated circuit board) according to the first embodiment of the present invention. FIG. 3 is an enlarged explanatory view of an aluminum nitride layer in a ceramic / aluminum bonded body (insulated circuit board) according to the first embodiment of the present invention. FIG. 4 is an enlarged explanatory view of a ceramic member (ceramic substrate) before joining in the ceramic / aluminum joined body (insulated circuit board) according to the first embodiment of the present invention. 5 is a flowchart showing a method for manufacturing a ceramic / aluminum bonded body (insulated circuit board) according to the first embodiment of the present invention. FIG. 6 is an explanatory diagram showing a method for manufacturing a ceramic / aluminum bonded body (insulated circuit board) according to the first embodiment of the present invention. 7 is a cross-sectional view showing an LED module using a ceramic / aluminum bonded body (insulated circuit board) according to a second embodiment of the present invention. FIG. 8 is a model diagram of a bonding interface between a ceramic member (ceramic substrate) and an aluminum member (aluminum plate) of a ceramic / aluminum bonded body (insulated circuit board) according to a second embodiment of the present invention. Fig. 9 is a flowchart showing a method for manufacturing a ceramic / aluminum bonded body (insulated circuit board) according to a second embodiment of the present invention. Fig. 10 is an explanatory diagram showing a method for manufacturing a ceramic member (ceramic substrate) according to a second embodiment of the present invention. FIG. 11 is an elemental mapping diagram of a joint interface between a ceramic member (ceramic substrate) and an aluminum member (aluminum plate) in the ceramic / aluminum joint (insulated circuit board) of Example 1 of the present invention.

Claims (12)

一種陶瓷/鋁接合體，其係將陶瓷構件與由鋁或鋁合金所成的鋁構件予以接合而成之陶瓷/鋁接合體，其特徵為： 　　前述陶瓷構件具有由氮化矽所成的陶瓷本體及在此陶瓷本體中之與前述鋁構件之接合面所形成的氮化鋁層或氧化鋁層，隔著前述氮化鋁層或前述氧化鋁層，接合前述鋁構件， 　　前述陶瓷本體具備氮化矽相與形成在此氮化矽相之間的玻璃相， 　　在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al。A ceramic / aluminum joint is a ceramic / aluminum joint formed by joining a ceramic member and an aluminum member made of aluminum or an aluminum alloy, and is characterized in that: the aforementioned ceramic member has a ceramic made of silicon nitride The main body and the aluminum nitride layer or the aluminum oxide layer formed on the joint surface of the ceramic body and the aluminum member are bonded to the aluminum member through the aluminum nitride layer or the aluminum oxide layer, and the ceramic body is provided with nitrogen. A silicon phase and a glass phase formed between the silicon nitride phase, and Al exist in an interface side portion of the glass phase of the ceramic body with the aluminum nitride layer or the aluminum oxide layer. 如請求項1之陶瓷/鋁接合體，其中在前述陶瓷本體中之與前述鋁構件之接合面，形成有前述氮化鋁層，前述氮化鋁層係從前述陶瓷本體側起依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層。For example, the ceramic / aluminum bonded body of claim 1, wherein the aluminum nitride layer is formed on the joint surface of the ceramic body with the aluminum member, and the aluminum nitride layer has the following order from the ceramic body side: The first aluminum nitride layer having a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and having a nitrogen concentration slope in the thickness direction, and the second aluminum nitride layer having a nitrogen concentration of 30 atomic% or more and less than 50 atomic%. . 一種絕緣電路基板，其係將陶瓷基板與由鋁或鋁合金所成的鋁板予以接合而成之絕緣電路基板，其特徵為： 　　前述陶瓷基板具有由氮化矽所成的陶瓷本體及在此陶瓷本體中之與前述鋁板之接合面所形成的氮化鋁層或氧化鋁層，隔著前述氮化鋁層或前述氧化鋁層，接合前述鋁板， 　　前述陶瓷本體具備氮化矽相與形成在此氮化矽相之間的玻璃相， 　　在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al。An insulated circuit substrate is an insulated circuit substrate formed by joining a ceramic substrate and an aluminum plate made of aluminum or an aluminum alloy, and is characterized in that: the aforementioned ceramic substrate has a ceramic body made of silicon nitride and the ceramic The aluminum nitride layer or aluminum oxide layer formed on the joint surface of the body with the aluminum plate is bonded to the aluminum plate through the aluminum nitride layer or the aluminum oxide layer. The ceramic body has a silicon nitride phase and is formed here. In the glass phase between the silicon nitride phases, Al exists in the interface side portion of the glass phase of the ceramic body with the aluminum nitride layer or the aluminum oxide layer. 如請求項3之絕緣電路基板，其中在前述陶瓷本體中之與前述鋁板之接合面，形成有前述氮化鋁層，前述氮化鋁層係從前述陶瓷本體側起依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層。For example, the insulated circuit substrate of claim 3, wherein the aluminum nitride layer is formed on the joint surface of the ceramic body with the aluminum plate, and the aluminum nitride layer has, in order from the ceramic body side, a nitrogen concentration of A first aluminum nitride layer having a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and having a nitrogen concentration tilt in the thickness direction, and a second aluminum nitride layer having a nitrogen concentration of 30 atomic% or more and less than 50 atomic%. 一種LED模組，其特徵為具備：如請求項3或4之絕緣電路基板，及在前述鋁板之與前述陶瓷基板相反側之面所接合的LED元件。An LED module is characterized by comprising: an insulated circuit substrate as claimed in claim 3 or 4; and an LED element bonded to a surface of the aluminum plate opposite to the ceramic substrate. 一種陶瓷構件，其特徵為具備由氮化矽所成的陶瓷本體與在此陶瓷本體之表面所形成的氮化鋁層或氧化鋁層， 　　前述陶瓷本體具備氮化矽相與形成在此氮化矽相之間的玻璃相， 　　在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al。A ceramic member is characterized by having a ceramic body made of silicon nitride and an aluminum nitride layer or an aluminum oxide layer formed on the surface of the ceramic body. The ceramic body has a silicon nitride phase and a nitride formed thereon. In the glass phase between the silicon phases, Al exists in the interface side portion of the glass phase of the ceramic body with the aluminum nitride layer or the aluminum oxide layer. 如請求項6之陶瓷構件，其中在前述陶瓷本體之表面，形成有前述氮化鋁層，前述氮化鋁層係從前述陶瓷本體側起依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層。The ceramic member according to claim 6, wherein the aluminum nitride layer is formed on the surface of the ceramic body, and the aluminum nitride layer has a nitrogen concentration of 50 atomic% or more and 80 atomic% in order from the ceramic body side. Hereinafter, the first aluminum nitride layer having a nitrogen concentration tilted in the thickness direction and the second aluminum nitride layer having a nitrogen concentration of 30 atomic% or more and less than 50 atomic%. 如請求項6或7之陶瓷構件，其中在前述陶瓷本體之表面，形成有前述氮化鋁層，在此氮化鋁層中之與前述陶瓷本體相反側之面，形成有金屬鋁部。The ceramic member according to claim 6 or 7, wherein the aluminum nitride layer is formed on the surface of the ceramic body, and a metal aluminum portion is formed on the surface of the aluminum nitride layer on the side opposite to the ceramic body. 一種陶瓷/鋁接合體之製造方法，其係製造如請求項1或2之陶瓷/鋁接合體的陶瓷/鋁接合體之製造方法，其特徵為具備： 　　在由氮化矽所成的陶瓷本體之表面，形成厚度20μm以下的鋁層之鋁層形成步驟， 　　將形成有前述鋁層的陶瓷本體加熱到前述鋁層的固相線溫度以上之溫度，形成氮化鋁層之氮化鋁層形成步驟，與 　　隔著前述氮化鋁層，接合鋁構件之鋁構件接合步驟。A method for manufacturing a ceramic / aluminum joint, which is a method for manufacturing a ceramic / aluminum joint, such as the ceramic / aluminum joint of claim 1 or 2, which is characterized by having: (1) a ceramic body made of silicon nitride; On the surface, an aluminum layer forming step is performed to form an aluminum layer having a thickness of 20 μm or less. The ceramic body on which the foregoing aluminum layer is formed is heated to a temperature above the solidus temperature of the foregoing aluminum layer to form an aluminum nitride layer. Step, and an aluminum member joining step of joining an aluminum member through the aforementioned aluminum nitride layer. 如請求項9之陶瓷/鋁接合體之製造方法，其具備：使前述氮化鋁層氧化而形成氧化鋁層之氧化處理步驟，與隔著前述氧化鋁層，接合鋁構件之鋁構件接合步驟。The method for manufacturing a ceramic / aluminum joint according to claim 9, comprising: an oxidation treatment step of oxidizing the aluminum nitride layer to form an aluminum oxide layer; and an aluminum member joining step of joining aluminum members through the aluminum oxide layer. . 一種絕緣電路基板之製造方法，其係製造如請求項3或4之絕緣電路基板的絕緣電路基板之製造方法，其特徵為具備： 　　在由氮化矽所成的陶瓷本體之表面，形成厚度20μm以下的鋁層之鋁層形成步驟， 　　將形成有前述鋁層的陶瓷本體加熱到前述鋁層的固相線溫度以上之溫度，形成氮化鋁層之氮化鋁層形成步驟，與 　　隔著前述氮化鋁層，接合鋁板之鋁板接合步驟。A method for manufacturing an insulated circuit substrate, which is a method for manufacturing an insulated circuit substrate as described in claim 3 or 4, which is characterized by: (1) forming a thickness of 20 μm on the surface of a ceramic body made of silicon nitride; In the following aluminum layer forming step of the aluminum layer, the ceramic body on which the aluminum layer is formed is heated to a temperature above the solidus temperature of the aluminum layer to form the aluminum nitride layer. Aluminium nitride layer, an aluminum plate joining step of joining an aluminum plate. 如請求項11之絕緣電路基板之製造方法，其具備：使前述氮化鋁層氧化而形成氧化鋁層之氧化處理步驟，與隔著前述氧化鋁層，接合鋁板之鋁板接合步驟。The method for manufacturing an insulated circuit board according to claim 11, comprising: an oxidation treatment step of oxidizing the aluminum nitride layer to form an aluminum oxide layer; and an aluminum plate joining step of joining an aluminum plate through the aluminum oxide layer.
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