TW201815240A - Element-embedded circuit board structures and methods for forming the same - Google Patents

Abstract

A element-embedded circuit board structure is provided. The includes a first core substrate having a first side and a second side opposite to the first side and an opening. A semiconductor element is disposed in the opening of the first core substrate, and there is a first gap between the semiconductor element and the first core substrate. A thermal-conductive glue fills the first gap, and a first wiring additional layered structure is disposed on the first side and covers the first core substrate, the semiconductor element and the thermal-conductive glue having a first blind hole located on the first core substrate, and having a first heat dissipation line is disposed in the first blind hole. A method for forming the element-embedded circuit board structure is also provided.

Description

 Component embedded circuit board structure and manufacturing method thereof  

The present invention relates to a packaging technology for a buried component, and more particularly to a component buried circuit board structure having a heat dissipation structure and a method of fabricating the same.

In a conventional packaging technology, a flip chip (FC) method or a wire bonding (WB) method is used to form an active component and a carrier into a package structure, and more than one package structure is used. The bodies are stacked or mounted on the same carrier surface. Considering the requirement that each component must be connected to each other through the line and the carrier board is reduced in size and volume due to product limitations, the wiring is becoming more and more difficult. Therefore, the industry has begun to develop technology for embedding active or passive components in the carrier.

In the embedded circuit board structure, the substrate will be combined with different materials, and different stress changes will occur in different production environments and temperatures, which will cause deformation or bending deformation of the substrate, resulting in production difficulties, misalignment, and yield. Reduced and affected by poor performance.

As the operating frequency of electronic products is getting higher and higher and more and more components need to be mounted on the same carrier board, the thermal energy generated by the active components and the passive components continues to increase, so the heat dissipation of the component embedded circuit board structure Ability and design are important.

Some embodiments of the present invention provide an element buried circuit board structure including: a first core board having a first side and a second side opposite to the first side, and having an opening; and a semiconductor component disposed on the first core board And a first gap between the semiconductor element and the first core plate; a thermal conductive adhesive filling the first gap; and a first circuit build-up structure disposed on the first side and covering the first core plate and the semiconductor component And the thermal paste, the first blind hole is located on the first core plate, and the first heat dissipation wire is disposed in the first blind hole.

Some embodiments of the present invention provide a method of fabricating an element buried circuit board structure, comprising: providing a carrier board; forming a core board on the carrier board, the core board having a first side and a second side opposite to the first side, and Having an opening; embedding a semiconductor component in the opening, wherein the semiconductor component has a gap with the core plate; filling the gap with the thermal conductive adhesive; removing the carrier; forming a line build-up structure on the first side, covering the core plate, The semiconductor component and the thermal conductive paste form a blind via in the line build-up structure on the core board, wherein the line build-up structure has a heat dissipation lead formed in the blind via.

100, 200, 300, 400, 500, 600‧‧‧ component embedded circuit board structure

101‧‧‧First core board

101a‧‧‧ first side

101b‧‧‧ second side

101c, 201a, 301a‧‧

102‧‧‧Semiconductor components

103‧‧‧Contact pads

104‧‧‧thermal adhesive

105‧‧‧First line build-up structure

105a‧‧‧First blind hole

105b‧‧‧second blind hole

106‧‧‧First heat sink

107‧‧‧Electrical connection structure

108‧‧‧Second line build-up structure

105c, 108a‧‧‧ third blind hole

108b, 108a’‧‧‧4th blind hole

108b’‧‧‧ fifth blind hole

108c’‧‧‧6th blind hole

109, 309‧‧‧second heat-dissipating wire

110, 304‧‧‧ third cooling wire

111‧‧‧First solder resist insulation

111a‧‧‧First opening

111b‧‧‧Second opening

111c, 112a‧‧‧ third opening

112‧‧‧Second solder resist insulation

112b, 112a’‧‧‧ fourth opening

112b’‧‧‧ fifth opening

112c'‧‧‧ sixth opening

120, 220‧‧‧ carrier board

201‧‧‧Second core board

202‧‧‧ unit

203, 305 ‧ ‧ gap

301‧‧‧No core board

302‧‧‧Dielectric layer

303, 502, 503‧‧‧ circuit layer

306‧‧‧4th heat sink

307‧‧‧Firmary heat sink

401, 402, 501, 601‧‧‧ heat dissipation frame

SC‧‧‧Cut Road

1A-1E is a cross-sectional view showing the manufacturing method of the device-embedded circuit board structure in accordance with an embodiment of the present invention at various stages.

Fig. 2 is a top view showing a first embodiment of Fig. 1A according to an embodiment of the present invention.

3A-3F are cross-sectional views showing various stages of a method of fabricating an element buried circuit board structure in accordance with another embodiment of the present invention.

4A-4F are cross-sectional views showing the manufacturing method of the component-embedded circuit board structure in accordance with still another embodiment of the present invention at various stages.

Figure 5 is a cross-sectional view showing the structure of an element buried circuit board in accordance with an embodiment of the present invention.

Figure 6 is a cross-sectional view showing the structure of an element buried circuit board in accordance with another embodiment of the present invention.

Figure 7 is a cross-sectional view showing the structure of an element buried circuit board in accordance with still another embodiment of the present invention.

Hereinafter, a component-embedded circuit board structure and a method of manufacturing a component-embedded circuit board structure according to an embodiment of the present invention will be described. However, it will be readily understood that the embodiments of the present invention are susceptible to many specific embodiments of the invention and can The specific embodiments disclosed are merely illustrative of the invention, and are not intended to limit the scope of the invention. In the drawings and the description of the embodiments of the present invention, the same reference numerals are used to refer to the same or similar parts.

Referring first to FIG. 1E, a cross-sectional view of a component buried circuit board structure 100 in accordance with an embodiment of the present invention is shown. The circuit board structure 100 includes a first core board 101 having a first side 101a and a second side 101b opposite to the first side 101a, and having at least one opening 101c extending through the first core board 101 (eg, 1A) Figure shows). In this embodiment, the first core plate 101 may be a metal material having better rigidity, higher hardness, and thermal conductivity. In some embodiments, the metal material of the first core plate 101 comprises a relatively hard metal or alloy such as aluminum, chromium, tungsten, titanium, vanadium, niobium or tantalum.

By using a metal material having a relatively good rigidity and heat conductivity as the first core board 101, the first core board 101 can withstand the stress variation in the process of manufacturing the component buried circuit board structure 100, and thus the first core board 101 can be improved. The component buried circuit board structure 100 is deformed and has the effect of rapid heat dissipation.

The component embedded circuit board structure 100 includes a semiconductor component 102. The at least one semiconductor component 102 is disposed in the opening 101c of the first core board 101, and the semiconductor component 102 is spaced apart from the first core board 101 to create a gap. In some embodiments, semiconductor component 102 can comprise an active component such as a transistor or a diode or a passive component such as a resistor, capacitor, or inductor. Above the semiconductor component 102 is a contact pad 103 for electrically connecting the semiconductor component 102 to an external line. Additionally, a thermally conductive metal layer (not shown) may be beneath the semiconductor component 102. In some embodiments, the thermally conductive metal layer can comprise nickel, gold, tin, lead, copper, aluminum, silver, chromium, tungsten, tantalum, or combinations thereof, or alloys of the foregoing or other suitable metallic materials.

The thermal conductive adhesive 104 fills the gap between the semiconductor component 102 and the first core board 101 to fix the semiconductor component 102 to the opening 101c of the first core board 101, and the thermal conductive adhesive 104 has a heat conducting function, and the semiconductor component 102 can be generated. The thermal energy is conducted to the first core board 101. In some embodiments, the thermal conductive adhesive 104 may comprise ruthenium and epoxy resin, and a metal such as ruthenium, aluminum, copper or the like or an oxide thereof may be added, and a reinforcing material such as glass fiber may be added depending on the use condition.

In the present embodiment, the component-embedded circuit board structure 100 includes a first line build-up structure 105. The first line build-up structure 105 is disposed on the first side 101a of the first core board 101 and covers the first core board 101, the semiconductor component 102 and the thermal paste 104, and the first line build-up structure 105 has a first blind via 105a. Located on the first core board 101 and the second blind via 105b are located on the contact pads 103 on the semiconductor component 102. In some embodiments, the first line build-up structure 105 may include a plurality of vertically stacked insulating layers, a circuit layer formed between the insulating layers, and a via hole penetrating the insulating layer and electrically connecting the circuit layers of the different layers. . The insulating layer, the wiring layer and the via holes are not shown in the first line build-up structure 105 for the sake of simplicity of the drawing.

In this embodiment, the first line build-up structure 105 has the first heat-dissipating wire 106 disposed in the first blind hole 105a. Thus, after the heat energy generated by the semiconductor component 102 is transmitted to the first core plate 101, the first A heat sink wire 106 conducts thermal energy up to the exterior of the component buried circuit board structure 100. In this embodiment, the first line build-up structure 105 has an electrical connection structure 107 disposed in the second blind via 105b to electrically connect the semiconductor component 102 to the external line. In some embodiments, the first heat dissipation wire 106 and the electrical connection structure 107 may comprise nickel, gold, tin, lead, copper, aluminum, silver, chromium, tungsten, tantalum or combinations thereof or alloys thereof or other suitable metals. material.

In some embodiments, the component buried circuit board structure 100 further includes a second line build structure 108. The second line build-up structure 108 is disposed on the second side 101b of the first core board 101 and under the first core board 101, the semiconductor component 102 and the thermal paste 104, and the second line build-up structure 108 has a third blind via 108a is located below the first core board 101 and the fourth blind via 108b is located below the semiconductor component 102. In some embodiments, the second line build-up structure 108 and the first line build-up structure 105 may have the same composition, that is, the second line build-up structure 108 may include a plurality of vertically stacked insulating layers formed between the insulating layers. a wiring layer and a via hole penetrating the insulating layer and electrically connecting the circuit layers of the different layers.

In this embodiment, the second line build-up structure 108 has the second heat-dissipating wire 109 disposed in the third blind hole 108a. Thus, after the heat energy generated by the semiconductor component 102 is transmitted to the first core board 101, the The two heat dissipating wires 109 conduct thermal energy downward to the outside of the component buried circuit board structure 100. In this embodiment, the second line build-up structure 108 has a third heat-dissipating wire 110 disposed in the fourth blind via 108b, such that the thermal energy generated by the semiconductor component 102 is conducted to the underlying thermally conductive metal layer (not shown). The thermal energy can be conducted downward through the third heat dissipation wire 110 to the outside of the component buried circuit board structure 100. In some embodiments, the second heat dissipating wire 109 and the third heat dissipating wire 110 may comprise nickel, gold, tin, lead, copper, aluminum, silver, chromium, tungsten, tantalum or combinations thereof or alloys thereof or other suitable metals. material.

The first heat dissipation wire 106 is disposed in the first blind hole 105a of the first circuit build-up structure 105, and the second heat dissipation wire 109 is disposed in the third blind hole 108a of the second circuit build-up structure 108. The third heat dissipation wire 110 is disposed. In the fourth blind via 108b of the second line build-up structure 108, the thermal energy generated by the semiconductor component 102 can be conducted out from a plurality of directions, and the wiring position and area of the heat-dissipating wires of the semiconductor component 102 can be effectively increased. In addition, since the first heat dissipation wires 106 and the second heat dissipation wires 109 are disposed on the first core plate 101 instead of being disposed on the semiconductor component 102, the configurations of the first heat dissipation wires 106 and the second heat dissipation wires 109 are not limited and are not occupied. The layout of the lines on the semiconductor component 102.

In some embodiments, the component buried circuit board structure 100 further includes a first solder resist insulating layer 111 and a second solder resist insulating layer 112. The first solder resist insulating layer 111 and the second solder resist insulating layer 112 are respectively disposed on the first line build-up structure 105 and the second line build-up structure 108, and the first solder resist layer 111 has the first opening 111a exposed. The first heat dissipation wire 106 and the second opening 111b expose the electrical connection structure 107, and the second solder resist layer 112 has a third opening 112a exposing the second heat dissipation wire 109 and the fourth opening 112b exposing the third Heat sink wire 110. In some embodiments, the first solder resist insulating layer 111 and the second solder resist insulating layer 112 may comprise a solder resist material (or green paint), or may comprise a polyimide, an ABF film (ajinomoto build) An insulating material of polypropylene (PP), which protects the first heat dissipating wire 106, the electrical connection structure 107, the second heat dissipating wire 109, and the third heat dissipating wire 110 from being oxidized or shorted to each other.

Referring to FIGS. 1A-1E, there is shown a cross-sectional view of a method of fabricating a component-embedded circuit board structure 100 in various stages in accordance with an embodiment of the present invention.

As shown in FIG. 1A, a carrier 120 is provided, and the surface of the carrier 120 has adhesiveness. Next, the first core plate 101 formed by attaching the surface of the carrier 120 to the carrier 120 is attached. The first core plate 101 has a first side 101a and a second side 101b opposite to the first side 101a. The second side 101b of a core board 101 is adhered to the carrier board 120. Before attaching the first core board 101 to the carrier board 120, at least one opening 101c is physically or chemically formed in the first core board 101, and the shape of the opening 101c is adjusted according to the shape of the embedded component, any shape Can be.

2 is a top view of the first core board 101 and the carrier board 120 of FIG. 1A according to an embodiment of the present invention. In this embodiment, the first core board 101 has a plurality of openings 101c, and a plurality of openings 101c. Can be arranged in any form.

In Fig. 1B, at least one semiconductor element 102 is buried in the opening 101c of the first core board 101 and on the carrier board 120, and the semiconductor element 102 has a contact pad 103 thereon. The semiconductor element 102 is separated from the first core plate 101 by a distance D to create a gap, and the thermal conductive adhesive 104 fills the gap. The thermal paste 104 secures the first core board 101 and the semiconductor component 102 together, such that, as shown in FIG. 1C, after the thermal paste 104 is filled, the carrier 120 can be removed.

In FIG. 1D, a first line build-up structure 105 is formed on the first side 101a of the first core board 101 and covers the first core board 101, the semiconductor component 102, and the thermal paste 104, and forms a second line build-up structure. 108 is on the second side 101b of the first core board 101 and is located below the first core board 101, the semiconductor component 102, and the thermal paste 104. Then, through the hole drilling process such as laser drilling or image transfer, the first blind via 105a is formed on the first core plate 101 and the second blind via 105b in the first line build-up structure 105. On the contact pad 103 on 102, and at the same time, a third blind via 108a is formed in the second line build-up structure 108 below the first core plate 101 and below the fourth blind via 108b under the semiconductor component 102. Then, the first heat dissipation wire 106 of the first line build-up structure 105 is formed in the first blind via 105a and the electrical connection structure 107 of the first line build-up structure 105 in the second blind via 105b through the electroplating process, and simultaneously The second heat dissipation wire 109 forming the second line build-up structure 108 is in the third blind hole 108a and the third heat dissipation wire 110 of the second line build-up structure 108 is in the fourth blind hole 108b. In some embodiments, other line build-up structures (not shown) may be repeatedly formed over the first line build-up structure 105 or under the second line build-up structure 108, and the opening process is also performed on other line build-up structures. An electroplating process to form a multilayer structure.

As shown in FIG. 1E, the first solder resist layer 111 is formed on the first line build-up structure 105 by physical means such as coating or attaching, pressing, and the like, and the second solder resist layer 112 is formed on the second line. Below the buildup structure 108. Then, a first opening 111a is formed in the first solder resist insulating layer 111 by a hole drilling process such as laser drilling or image transfer, and the first heat dissipating wire 106 and the second opening 111b are exposed to expose the electrical connection structure 107. And forming a third opening 112a in the second solder resist insulating layer 112 to expose the second heat dissipating wire 109 and the fourth opening 112b to expose the third heat dissipating wire 110 through a hole drilling process such as laser drilling or image transfer. The fabrication of the component buried circuit board structure 100 is completed.

Furthermore, please refer to FIG. 3F, which shows a cross-sectional view of the component-embedded circuit board structure 200 according to an embodiment of the present invention, wherein the same components as those in the first embodiment are denoted by the same reference numerals and the description thereof is omitted. .

The component buried circuit board structure 200 in FIG. 3F is similar to the component buried circuit board structure 100 in FIG. 1E except that in the embodiment of FIG. 3F, the first core board 101, the semiconductor element 102, and The thermal conductive adhesive 104 constitutes a unit 202. At least one unit 202 is disposed in the opening 201a of the second core board 201, and the unit 202 and the second core board 201 are separated by a distance to generate a gap 203. Furthermore, the first line build-up structure 105 further covers the second core board 201 and fills the gap 203 between the unit 202 and the second core board 201. The second line build-up structure 108 is disposed on the unit 202 and the second core board. Below 201. In this embodiment, the material of the second core plate 201 may be a resin material including a paper phenolic resin, a composite epoxy, and a polyimide resin.

By using the metal material with better rigidity and heat conduction as the first core board 101, the first core board 101 can withstand the stress variation in the process of manufacturing the component buried circuit board structure 200, and can be improved by the first core board 101. The case of deformation of the second core board 201.

Please refer to FIGS. 3A-3F, which are schematic cross-sectional views showing the manufacturing method of the component-embedded circuit board structure 200 according to an embodiment of the present invention, in which the components in the same manner as in the first A-1E diagram are used. The same reference numerals are used and the description thereof is omitted.

The manufacturing method of the component-embedded circuit board structure 200 in the 3A-3F diagram is similar to the cross-sectional schematic diagram of the manufacturing method of the component-embedded circuit board structure 100 in FIG. 1A-1E at each stage. The difference is that in FIG. 3C, the cutting is performed at the scribe line SC of the first core board 101 to form the unit 202 composed of the first core board 101, the semiconductor element 102, and the thermal paste 104.

In the 3D drawing, the carrier 220 is provided, and the surface of the carrier 220 has adhesiveness. Next, the second core plate 201 is attached to the carrier 220 by the surface adhesion of the carrier 220. At least one opening 201a is formed in the second core plate 201 by physical or chemical means before the second core plate 201 is attached to the carrier 220. In some embodiments, the upper view of the second core panel 201 having the opening 201a can be similar to the top view of the first core panel 101 having the opening 101c as shown in FIG.

After the second core plate 201 having the opening 201a is formed on the carrier 220, at least one unit 202 is placed in the opening 201a and formed on the carrier 220, and a gap 203 is formed between the unit 202 and the second core plate 201.

In FIG. 3E, a first line build-up structure 105 is formed on the first side 101a of the first core board 101 and covers the second core board 201 and the unit 202, and the first line build-up structure 105 fills the unit 202 and A gap 203 between the second core plates 201. Next, since the first line build-up structure 105 secures the second core board 201 and the unit 202 together, the carrier board 220 can be removed. Next, a second line build-up structure 108 is formed on the second side 101b of the first core board 101 and below the unit 202 and the second core board 201.

Then, a contact pad of the first blind via 105a on the first core board 101 and the second blind via 105b on the semiconductor component 102 is formed in the first line build-up structure 105 by a hole drilling process such as laser drilling or image transfer. 103, and at the same time forming a third blind via 108a in the second line build-up structure 108 below the first core board 101 and the fourth blind via 108b below the semiconductor component 102. Then, the first heat dissipation wire 106 of the first line build-up structure 105 is formed in the first blind via 105a and the electrical connection structure 107 of the first line build-up structure 105 in the second blind via 105b through the electroplating process, and simultaneously The second heat dissipation wire 109 forming the second line build-up structure 108 is in the third blind hole 108a and the third heat dissipation wire 110 of the second line build-up structure 108 is in the fourth blind hole 108b. In some embodiments, other line build-up structures (not shown) may be repeatedly formed over the first line build-up structure 105 or under the second line build-up structure 108, and the opening process is also performed on other line build-up structures. An electroplating process to form a multilayer structure.

As shown in FIG. 3F, the first solder resist layer 111 is formed on the first line build-up structure 105 by physical means such as coating or attaching, pressing, etc., and the second solder resist layer 112 is formed on the second line. Below the buildup structure 108. Then, a first opening 111a is formed in the first solder resist insulating layer 111 by a hole drilling process such as laser drilling or image transfer, and the first heat dissipating wire 106 and the second opening 111b are exposed to expose the electrical connection structure 107. And forming a third opening 112a in the second solder resist insulating layer 112 to expose the second heat dissipating wire 109 and the fourth opening 112b to expose the third heat dissipating wire 110 through a hole drilling process such as laser drilling or image transfer. The fabrication of the component buried circuit board structure 200 is completed.

Furthermore, please refer to FIG. 4F, which shows a cross-sectional view of a component-embedded circuit board structure 300 according to an embodiment of the present invention, wherein components in the same manner as in FIG. 3F are given the same reference numerals and are omitted. Description.

The component-embedded circuit board structure 300 in FIG. 4F is similar to the component-embedded circuit board structure 200 in FIG. 3F, except that the second core board 201 is replaced by the coreless board 301 in FIG. 4F, that is, at least A unit 202 is disposed in the opening 301a of the coreless board 301, and has a gap 305 between the unit 202 and the coreless board 301. In some embodiments, the coreless board 301 includes a dielectric layer 302 and a circuit layer 303 disposed in the dielectric layer 302, that is, the coreless board 301 does not include, for example, the first core board 101 and the second core board 201. The core board material, and the coreless board 301 may have a smaller thickness than the first core board 101 and the second core board 201.

By using a rigid and thermally conductive metal material as the first core plate 101, the first core plate 101 is more capable of undergoing stress changes during the process of receiving the component buried circuit board structure 300, and can be utilized by the first core board. 101 improves the deformation of the coreless board 301.

In FIG. 4F, the first line build-up structure 105 further covers the coreless board 301 and fills the gap 305 between the unit 202 and the coreless board 301, and the first line build-up structure 105 has the third blind hole 105c exposed. The circuit layer 303 of the core board 301 is absent, and the first line build-up structure 105 has a second heat dissipation wire 309 disposed in the third blind hole 105c. Furthermore, the first heat dissipation wire 106 and the second heat dissipation wire 309 are connected to each other, and the circuit layer 303 of the coreless board 301 is connected to the first core board through the first heat dissipation wire 106 and the second heat dissipation wire 309 of the first line build-up structure 105. 101.

In this embodiment, the second line build-up structure 108 is disposed under the unit 202 and the coreless board 301, and has a fourth blind hole 108a' located below the first core board 101, and a fifth blind hole 108b' located on the coreless board. The lower and third blind holes 108c' are located below the semiconductor component 102, and the second circuit build-up structure 108 has a third heat-dissipating wire 304 disposed in the fourth blind hole 108a', and the fourth heat-dissipating wire 306 is disposed in the fifth blind hole. The 108b' neutralizing fifth heat dissipating wire 307 is disposed in the sixth blind hole 108c'. In the embodiment, the third heat dissipation wire 304 and the fourth heat dissipation wire 306 are connected to each other.

In the present embodiment, the first solder resist insulating layer 111 and the second solder resist insulating layer 112 are respectively disposed on the first line build-up structure 105 and below the second line build-up structure 108. The first solder resist insulating layer 111 has a first opening 111a exposing the first heat dissipating wire 106, the second opening 111b exposing the electrical connecting structure 107, and the third opening 111c exposing the second heat dissipating wire 309, the second anti-resistance The soldering insulating layer 112 has a fourth opening 112a' exposing the third heat dissipating wire 304, and the fifth opening 112b' exposing the fourth heat dissipating wire 306 and the sixth opening 112c' exposing the fifth heat dissipating wire 307.

Through the above configuration, the thermal energy generated by the semiconductor component 102 can be sequentially transmitted through the thermal conductive adhesive 104, the first core board 101, the first heat dissipation lead 106 of the first line build-up structure 105, and the second heat dissipation lead 309 to the component embedded type. The heat generated by the semiconductor device 102 can also pass through the thermal adhesive 104, the first core plate 101, the third heat dissipation wire 304 of the second line buildup structure 108, and the fourth heat dissipation wire 306. Conducted to the outside of the component buried circuit board structure 300, and the thermal energy generated by the semiconductor component 102 is further directly conducted from the fifth heat dissipation wire 307 to the outside of the component buried circuit board structure 300, and thus the semiconductor component 102 generates Thermal energy can be conducted out from more directions, and the wiring position and area of the heat dissipation wires of the semiconductor element 102 can be effectively increased. In addition, since the first heat dissipation wires 106 and the third heat dissipation wires 304 are disposed on the first core plate 101, the second heat dissipation wires 309 and the fourth heat dissipation wires 306 are disposed on the coreless plate 301, and the components are not disposed on the semiconductor component 102. Therefore, the configuration of the first heat dissipation wire 106, the second heat dissipation wire 309, the third heat dissipation wire 304, and the fourth heat dissipation wire 306 may not be limited and does not occupy the line layout on the semiconductor component 102.

The manufacturing method of the component-embedded circuit board structure 300 in the 4A-4F diagram is similar to the cross-sectional schematic diagram of the manufacturing method of the component-embedded circuit board structure 200 in the 3A-3F diagram at each stage. The difference is that in the 4D drawing, the coreless board 301 formed by the surface adhesion of the carrier 220 is attached to the carrier 220. Before the coreless board 301 is adhered to the carrier 220, at least one opening 301a is formed in the coreless board 301 through the image transfer process. In some embodiments, the top view of the coreless board 301 having the opening 301a may be similar to the top view of the first core board 101 having the opening 101c as shown in FIG.

After forming the coreless board 301 on the carrier board 220, at least one unit 202 is placed in the opening 301a and on the carrier board 220, and there is a gap 305 between the unit 202 and the coreless board 301.

In FIG. 4E, a first line build-up structure 105 is formed on the first side 101a of the first core board 101 and covers the coreless board 301 and the unit 202, and the first line build-up structure 105 fills the unit 202 and A gap 305 between the core plates 301. Next, since the first line build-up structure 105 secures the coreless board 301 and the unit 202 together, the carrier board 220 can be removed. Next, a second line build-up structure 108 is formed on the second side 101b of the first core board and below the unit 202 and the coreless board 301.

Then, through the hole drilling process such as laser drilling or image transfer, the first blind via 105a is formed on the first core plate 101 and the second blind via 105b is on the semiconductor device 102. The pad layer 103 and the third blind hole 105c expose the circuit layer 303 without the core plate 301, and at the same time, the fourth blind hole 108a' is formed in the second circuit build-up structure 108 below the first core plate 101, and the fifth blind hole 108b' is below the coreless board 301 and exposes the circuit layer 303 and the sixth blind via 108c' of the coreless board 301 below the semiconductor component 102. Then, the first heat dissipation wire 106 is formed in the first blind hole 105a through the electroplating process, the electrical connection structure 107 is in the second blind hole 105b, and the second heat dissipation wire 309 is in the third blind hole 105c, wherein the first heat dissipation The wire 106 and the second heat-dissipating wire 309 are connected to each other, and at the same time, the third heat-dissipating wire 304 is formed in the fourth blind hole 108a', the fourth heat-dissipating wire 306 is in the fifth blind hole 108b', and the fifth heat-dissipating wire 307 is in the sixth In the blind hole 108c'. In some embodiments, other line build-up structures (not shown) may be repeatedly formed over the first line build-up structure 105 or under the second line build-up structure 108, and the opening process is also performed on other line build-up structures. An electroplating process to form a multilayer structure.

As shown in FIG. 4F, the first solder resist insulating layer 111 is formed on the first line build-up structure 105 by a coating or attaching, pressing, or the like, and the second solder resist layer 112 is formed on the second line. Below the buildup structure 108. Then, through the hole drilling process such as laser drilling or image transfer, the first opening 111a is formed in the first solder resist insulating layer 111 to expose the first heat dissipating wire 106, and the second opening 111b exposes the electrical connection structure 107. And the third opening 111c exposes the second heat-dissipating wire 309, and through the hole drilling process such as laser drilling or image transfer, forming a fourth opening 112a' in the second solder resist insulating layer 112 to expose the third heat-dissipating wire 304, forming a fifth opening 112b' exposing the fourth heat-dissipating wire 306 and forming a sixth opening 112c' exposing the fifth heat-dissipating wire 307, completing the fabrication of the component-embedded circuit board structure 300.

Furthermore, please refer to FIG. 5, which shows a cross-sectional view of a component-embedded circuit board structure 400 according to an embodiment of the present invention, wherein the same components as those in FIG. 1E are denoted by the same reference numerals and the description thereof is omitted. .

The component buried circuit board structure 400 in FIG. 5 is similar to the component buried circuit board structure 100 in FIG. 1E, except that the component buried circuit board structure 400 of FIG. 5 further includes a first heat dissipation frame. 401 and the second heat dissipation frame 402, the first heat dissipation frame 401 and the second heat dissipation frame 402 are respectively disposed outside the first line build-up structure 105 and outside the second line build-up structure 108. The first heat dissipation frame 401 and the second heat dissipation frame 402 are frame structures surrounding the first build-up structure 105 and the second build-up structure 108, respectively.

Through the above configuration, the thermal energy generated by the semiconductor component 102 can be sequentially transmitted to the outside of the component buried circuit board structure 400 through the thermal conductive adhesive 104, the first core board 101, the first heat dissipation frame 401, and the second heat dissipation frame 402, and the semiconductor component The thermal energy generated by 102 can be conducted out in more directions and can effectively increase the heat dissipation area.

Furthermore, the first heat dissipation frame 401 and the second heat dissipation frame 402 are respectively disposed on the outer side of the first line build-up structure 105 and the outer side of the second line build-up structure 108, thereby reinforcing the entirety of the component-embedded circuit board structure 400. The structural strength can effectively improve the deformation of the component-embedded circuit board structure 400.

Regarding the manufacturing method of the first heat dissipation frame 401 and the second heat dissipation frame 402, in the present embodiment, the first blind hole 105a and the second blind hole 105b are formed in the first line build-up structure 105 and the second line is added to the second line. During the formation of the third blind hole 108a and the fourth blind hole 108b in the structure 108, the peripheral edge portions of the first build-up structure 105 and the second build-up structure 108 are removed by an opening process such as laser drilling or image transfer. . Then, during the formation of the first heat dissipation wire 106, the electrical connection structure 107, the second heat dissipation wire 109, and the third heat dissipation wire 110, the first heat dissipation frame 401 and the second heat dissipation frame 402 are respectively formed through the plating process. The outside of the line build-up structure 105 and the outside of the second line build-up structure 108.

Furthermore, please refer to FIG. 6 , which shows a cross-sectional view of a component-embedded circuit board structure 500 according to some embodiments of the present invention, wherein components in the same manner as in FIG. 3F are given the same reference numerals and their description is omitted. .

The component-embedded circuit board structure 500 in FIG. 6 is similar to the component-embedded circuit board structure 200 in FIG. 3F. The difference is that the component-embedded circuit board structure 500 of FIG. 6 further includes a heat dissipation frame 501. The heat dissipation frame 501 is disposed outside the first line build-up structure 105, the second core plate 201, and the second line build-up structure 108. The heat dissipation frame 501 is a frame structure surrounding the first line build-up structure 105, the second core plate 201, and the second line build-up structure 108. In this embodiment, the heat dissipation frame 501 is connected to the first core board 101 and the first heat dissipation line 106 through the circuit layer 502 of the first line build-up structure 105, and the heat dissipation frame 501 also passes through the line of the second line build-up structure 108. The layer 503 is connected to the first core board 101 and the second heat dissipation line 109.

Through the above configuration, the thermal energy generated by the semiconductor device 102 can sequentially pass through the thermal conductive adhesive 104, the first core board 101, the circuit layer 502 of the first line build-up structure 105 (or the circuit layer 503 of the second line build-up structure 108), The heat dissipation frame 501 is conducted to the outside of the component buried circuit board structure 500, and the thermal energy generated by the semiconductor component 102 can be conducted out from more directions, and the heat dissipation area can be effectively increased.

Furthermore, the heat dissipation frame 501 is disposed outside the first line build-up structure 105, the second core plate 201, and the second line build-up structure 108, so that the overall structural strength of the component-embedded circuit board structure 500 can be strengthened. The case where the second core board 201 in the component buried circuit board structure 500 is deformed is effectively improved.

Regarding the manufacturing method of the heat dissipation frame 501, in the present embodiment, the peripheral edge portion of the second core plate 201 is removed by an opening process such as machine drilling or image transfer. Next, a first blind via 105a and a second blind via 105b are formed in the first line build-up structure 105, and a third blind via 108a and a fourth blind via 108b are formed in the second trace build-up structure 108. An opening process such as drilling or image transfer is performed to remove the peripheral edge portions of the first line build-up structure 105 and the second line build-up structure 108. Then, during the formation of the first heat dissipation wire 106, the electrical connection structure 107, the second heat dissipation wire 109, and the third heat dissipation wire 110, the heat dissipation frame 501 is formed through the plating process to the first line build-up structure 105 and the second core board. 201 and the outer side of the second line buildup structure 108.

Furthermore, please refer to FIG. 7, which shows a cross-sectional view of a component-embedded circuit board structure 600 according to an embodiment of the present invention, wherein components in the same manner as in FIG. 4F are given the same reference numerals and their description is omitted. .

The component-embedded circuit board structure 600 in FIG. 7 is similar to the component-embedded circuit board structure 300 in FIG. 4F. The difference is that the component-embedded circuit board structure 600 of FIG. 7 further includes a heat dissipation frame 601. The heat dissipation frame 601 is disposed outside the coreless board 301, the first line build-up structure 105, and the second line build-up structure 108. The heat dissipation frame 601 is a frame structure surrounding the coreless board 301, the first line build-up structure 105, and the second line build-up structure 108. In this embodiment, the heat dissipation frame 601 is transmitted through the circuit layer 303 of the coreless board 301 and the first heat dissipation wire 106, the second heat dissipation wire 309 of the first line buildup structure 105, and the third heat dissipation of the second line buildup structure 108. The wire 304 and the fourth heat dissipation wire 306 are connected to the first core plate 101.

Through the above configuration, the thermal energy generated by the semiconductor component 102 can sequentially pass through the thermal conductive adhesive 104, the first core board 101, the first heat dissipation lead 106 of the first line build-up structure 105, the second heat dissipation lead 309, and the line without the core board 301. The layer 303, the heat dissipation frame 601 or the thermal conductive adhesive 104, the first core board 101, the third heat dissipation wire 304 of the second line build-up structure 108, the fourth heat dissipation wire 306, the circuit layer 303 of the coreless board 301, and the heat dissipation frame 601 are conducted. To the outside of the component buried circuit board structure 600, the thermal energy generated by the semiconductor component 102 can be conducted out from more directions, and the heat dissipation area can be effectively increased.

Furthermore, the heat dissipation frame 601 is disposed outside the first line build-up structure 105, the coreless board 301, and the second line build-up structure 108, thereby enhancing the overall structural strength of the component-embedded circuit board structure 600, thereby being effective. The case where the core-free board 301 in the component-embedded circuit board structure 600 of the embedded component is deformed is improved.

Regarding the manufacturing method of the heat dissipation frame 601, in the present embodiment, before the at least one opening 301a is formed in the coreless board 301, the peripheral edge portion of the coreless board 301 is removed by an opening process such as image transfer. Next, a first blind via 105a, a second blind via 105b and a third blind via 105c are formed in the first line build-up structure 105, and a fourth blind via 108a' is formed in the second trace build-up structure 108. During the hole 108b' and the sixth blind hole 108c', the peripheral edge portions of the first line build-up structure 105 and the second line build-up structure 108 are removed by an opening process such as laser drilling or image transfer. Then, during the formation of the first heat dissipation wire 106, the electrical connection structure 107, the second heat dissipation wire 309, the third heat dissipation wire 304, the fourth heat dissipation wire 306, and the fifth heat dissipation wire 307, the heat dissipation frame 601 is formed through the plating process. The outer side of the first line build-up structure 105, the coreless board 301, and the second line build-up structure 108.

According to some embodiments of the present invention, by using a metal material with better rigidity and heat conduction as the first core board, the first core board can withstand the stress change of the component embedded circuit board structure during the manufacturing process, thereby improving the component. The embedded circuit board structure is deformed and has the effect of rapid heat dissipation.

Furthermore, since the first heat dissipation wire, the second heat dissipation wire, the third heat dissipation wire, the fourth heat dissipation wire, and the fifth heat dissipation wire are respectively disposed in the blind holes at different positions, the heat energy generated by the semiconductor component can be conducted from multiple directions. And the wiring position and area of the heat dissipating wire of the semiconductor element can be effectively increased. In addition, since the heat dissipation wires can be disposed on the first core board and the coreless board instead of being disposed on the semiconductor element, the configuration of the heat dissipation wires can be unrestricted and does not occupy the line layout on the semiconductor elements.

Furthermore, since the thermal energy generated by the semiconductor component can be transmitted to the outside of the component buried circuit board structure through the heat dissipation frame around the component embedded circuit board structure, the thermal energy generated by the semiconductor component can be conducted from more directions, and Effectively increase the heat dissipation area.

In addition, the heat dissipation frame is located outside the component-embedded circuit board structure, and the overall structural strength of the package structure can be strengthened, so that the structural deformation of the component-embedded circuit board can be effectively improved.

While the invention has been described above in terms of the preferred embodiments thereof, which are not intended to limit the invention, the invention may be modified and combined with the various embodiments described above without departing from the spirit and scope of the invention. example.

Claims (22)

 An element embedded circuit board structure includes: a first core board having a first side and a second side opposite to the first side, and having an opening; a semiconductor component disposed on the first core In the opening of the board, and having a first gap between the semiconductor component and the first core board; a thermal conductive adhesive filling the first gap; and a first line build-up structure disposed on the first side The first core board, the semiconductor component and the thermal paste are disposed on the first core board, and a first heat dissipation lead is disposed in the first blind hole.    The component embedded circuit board structure of claim 1, wherein the first core board is a metal material.    The component-embedded circuit board structure of claim 1, wherein the first line build-up structure has a second blind hole on the semiconductor component, and an electrical connection structure is disposed on the second The blind via is electrically connected to the semiconductor component.    The component-embedded circuit board structure of claim 3, further comprising: a second line build-up structure disposed on the second side and located on the first core board, the semiconductor component, and the heat conduction Under the glue, and having a third blind hole under the first core plate and a fourth blind hole under the semiconductor component, the second circuit build-up structure has a second heat dissipation wire disposed in the third blind hole And a third heat dissipation wire is disposed in the fourth blind hole.    The component embedded circuit board structure of claim 4, further comprising: a first solder resist insulating layer and a second solder resist insulating layer respectively disposed on the first line buildup structure and Under the second line build-up structure, the first solder resist insulating layer has a first opening exposing the first heat dissipating wire and a second opening exposing the electrical connection structure, the second solder resist insulating layer has A third opening exposes the second heat dissipation wire and a fourth opening exposes the third heat dissipation wire.    The component-embedded circuit board structure of claim 4, further comprising a first heat dissipation frame and a second heat dissipation frame respectively disposed on an outer side of the first line build-up structure and the second line increase The outside of the layer structure.    The component-embedded circuit board structure of claim 3, further comprising a second core board, wherein the first core board, the semiconductor component and the heat conductive adhesive comprise a unit disposed on the second core board In an opening, and a second gap between the unit and the second core plate.    The component-embedded circuit board structure of claim 7, wherein the second core board is a resin material.    The component-embedded circuit board structure of claim 7, wherein the first line build-up structure covers the second core board and fills the second gap.    The component-embedded circuit board structure of claim 7, further comprising: a second line build-up structure disposed under the unit and the second core board, and having a third blind hole located therein The first core plate and a fourth blind hole are located under the semiconductor component, and the second circuit build-up structure has a second heat dissipation wire disposed in the third blind hole and a third heat dissipation wire disposed on the fourth In the blind hole.    The component embedded circuit board structure of claim 10, further comprising: a first solder resist insulating layer and a second solder resist insulating layer respectively disposed on the first line buildup structure and Under the second line build-up structure, the first solder resist insulating layer has a first opening exposing the first heat dissipating wire and a second opening exposing the electrical connection structure, the second solder resist insulating layer has A third opening exposes the second heat dissipation wire and a fourth opening exposes the third heat dissipation wire.    The component-embedded circuit board structure of claim 10, further comprising a heat dissipation frame disposed outside the first line build-up structure, the second core board, and the second line build-up structure.    The component-embedded circuit board structure of claim 12, wherein the heat dissipation frame is connected to the first core board through a circuit layer of the first line build-up structure.    The component-embedded circuit board structure of claim 3, further comprising a coreless board, wherein the coreless board comprises a dielectric layer and a circuit layer disposed in the dielectric layer, wherein the first layer The core board, the semiconductor component and the heat conductive adhesive comprise a unit disposed in an opening of the coreless board, and a third gap is formed between the unit and the coreless board.    The component-embedded circuit board structure of claim 14, wherein the first line build-up structure covers the coreless board and fills the third gap, and has a third blind hole exposing the This circuit layer without a core board.    The component-embedded circuit board structure of claim 15, wherein the first line build-up structure has a second heat-dissipating wire disposed in the third blind hole, and the first heat-dissipating wire and the first The two heat dissipation wires are connected to each other.    The component-embedded circuit board structure of claim 15, wherein the circuit layer of the coreless board is connected to the first heat dissipation wire and the second heat dissipation wire of the first line build-up structure. A core board.    The component-embedded circuit board structure of claim 16 or 17, further comprising: a second line build-up structure disposed under the unit and the coreless board and having a fourth blind a hole is located below the first core plate, a fifth blind hole is located under the coreless plate, and a sixth blind hole is located under the semiconductor component, and the second line build-up structure has a third heat dissipation wire disposed on the first A fourth heat-dissipating wire is disposed in the fifth blind hole, and a fifth heat-dissipating wire is disposed in the sixth blind hole, wherein the third heat-dissipating wire and the fourth heat-dissipating wire are connected to each other.    The component embedded circuit board structure of claim 18, further comprising: a first solder resist insulating layer and a second solder resist insulating layer respectively disposed on the first line buildup structure and Under the second line build-up structure, the first solder resist insulating layer has a first opening exposing the first heat dissipating wire, a second opening exposing the electrical connecting structure and a third opening exposing the a second heat dissipating wire, the second solder resist layer has a fourth opening exposing the third heat dissipating wire, a fifth opening exposing the fourth heat dissipating wire and a sixth opening exposing the fifth heat dissipating wire.    The component-embedded circuit board structure of claim 16 further includes a heat dissipation frame disposed outside the coreless board.    The component-embedded circuit board structure of claim 19, wherein the heat dissipation frame passes through the circuit layer of the coreless board and the first heat dissipation wire and the second heat dissipation of the first line build-up structure A wire is connected to the first core board.    A method of manufacturing a component-embedded circuit board structure includes: providing a carrier board; forming a core board on the carrier board, the core board having a first side and a second side opposite to the first side, And having an opening; embedding a semiconductor component in the opening, wherein the semiconductor component and the core plate have a gap; filling a gap with a thermal conductive adhesive; removing the carrier; forming a line buildup layer Forming on the first side, covering the core board, the semiconductor component and the thermal conductive adhesive, and forming a blind hole in the core layer in the line build-up structure, wherein the line build-up structure has a heat-dissipating wire formed In the blind hole.