TW201806097A - Manufacturing apparatus and manufacturing method of electronic component and electronic component - Google Patents
Manufacturing apparatus and manufacturing method of electronic component and electronic component Download PDFInfo
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- TW201806097A TW201806097A TW106103074A TW106103074A TW201806097A TW 201806097 A TW201806097 A TW 201806097A TW 106103074 A TW106103074 A TW 106103074A TW 106103074 A TW106103074 A TW 106103074A TW 201806097 A TW201806097 A TW 201806097A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 claims abstract description 391
- 239000002184 metal Substances 0.000 claims abstract description 391
- 239000011347 resin Substances 0.000 claims abstract description 248
- 229920005989 resin Polymers 0.000 claims abstract description 248
- 239000000758 substrate Substances 0.000 claims abstract description 185
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- 230000004048 modification Effects 0.000 description 5
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 239000011889 copper foil Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
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- 229910001220 stainless steel Inorganic materials 0.000 description 1
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- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
- H01L2924/16153—Cap enclosing a plurality of side-by-side cavities [e.g. E-shaped cap]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/181—Encapsulation
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- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
本發明涉及一種電子部件的製造裝置及製造方法以及電子部件，該電子部件的製造裝置及製造方法藉由對電晶體、積體電路（Integrated Circuit：IC）等晶片狀元件（以下適當地稱作“晶片部件”）進行樹脂封裝來製造電子部件。The present invention relates to a device and method for manufacturing an electronic component, and an electronic component. The device and method for manufacturing the electronic component are adapted to wafer-like elements (hereinafter, appropriately referred to as transistors, integrated circuits (ICs), etc.) "Wafer components") are resin-encapsulated to manufacture electronic components.
近年來，伴隨半導體器件越來越向高性能化、多功能化和小型化發展，處於半導體晶片所耗費的功耗越來越增加的傾向。特別是，在處理大功率的功率器件、處理高頻訊號的微處理器、高頻器件等半導體晶片中，由功耗的增加引起的發熱成為大問題。為了促進半導體晶片所發出的熱的釋放，藉由在半導體裝置（半導體封裝件）的表面上設置散熱板（heat sink）而將半導體晶片所發出的熱釋放到外部以進行冷卻。In recent years, with the development of semiconductor devices toward higher performance, multifunctionality, and miniaturization, the power consumption consumed by semiconductor wafers is increasing. In particular, in semiconductor wafers such as high-power power devices, microprocessors that process high-frequency signals, and high-frequency devices, heat generation caused by an increase in power consumption becomes a major problem. In order to promote the release of heat emitted from the semiconductor wafer, a heat sink is provided on the surface of the semiconductor device (semiconductor package) to release the heat emitted from the semiconductor wafer to the outside for cooling.
作為具有散熱板的半導體裝置，提出有如下的半導體裝置（例如，參照專利文獻1的第[0006]、[0043]段、第1圖及第2圖）：該半導體裝置利用樹脂封裝用硬化樹脂來實施由鋁等金屬構成的散熱片的安裝。As a semiconductor device having a heat sink, there have been proposed the following semiconductor devices (for example, refer to paragraphs [0006], [0043], FIGS. 1 and 2 of Patent Document 1): This semiconductor device uses a hardened resin for resin encapsulation. The mounting of a heat sink made of metal such as aluminum is performed.
專利文獻1：特開2002-158316號公報Patent Document 1: Japanese Patent Application Laid-Open No. 2002-158316
但是，在專利文獻1所公開的習知半導體裝置中存在如下問題。如專利文獻1的第[0007]段及第2圖的(a)部分所示，散熱片經由優良導熱性部件與半導體晶片的背面接觸。當使金屬制散熱片與半導體晶片直接接觸時，有可能發生半導體晶片的缺損、裂開等破損。為了防止半導體晶片的破損，在散熱片與半導體晶片之間設置有優良導熱性部件。However, the conventional semiconductor device disclosed in Patent Document 1 has the following problems. As shown in paragraph [0007] of Patent Document 1 and part (a) of FIG. 2, the heat sink is in contact with the back surface of the semiconductor wafer via an excellent thermally conductive member. When the metal heat sink is brought into direct contact with the semiconductor wafer, damage such as chipping or cracking of the semiconductor wafer may occur. In order to prevent damage to the semiconductor wafer, an excellent thermally conductive member is provided between the heat sink and the semiconductor wafer.
本發明用於解決上述問題，其目的在於提供一種用於製造電子部件的電子部件的製造裝置及製造方法以及電子部件，該電子部件防止晶片部件的破損，並包括晶片部件和以覆蓋晶片部件的方式設置且具有導電性的第一部件。The present invention is intended to solve the above-mentioned problems, and an object thereof is to provide an electronic component manufacturing device, a manufacturing method, and an electronic component for manufacturing an electronic component. A first member provided in a manner and having conductivity.
為了解決上述問題，本發明的電子部件的製造裝置具備：In order to solve the above problems, an apparatus for manufacturing an electronic component according to the present invention includes:
成型模，至少具有第一模和與所述第一模相對置的第二模；型腔，被設置在所述第一模和所述第二模中的至少一個上；基板供給機構，以俯視時與所述型腔重疊的方式供給封裝前基板，所述封裝前基板在基板的被安裝面上設置有接地電極並至少安裝有晶片部件；樹脂供給機構，用於向所述型腔供給樹脂材料；以及合模機構，用於對所述成型模進行開模及合模，所述電子部件的製造裝置用於製造至少具有所述晶片部件、俯視時覆蓋所述晶片部件的第一部件和由所述樹脂材料成型的硬化樹脂的電子部件，A molding die having at least a first die and a second die opposite to the first die; a cavity provided on at least one of the first die and the second die; a substrate supply mechanism to The package front substrate is supplied in a manner overlapping with the cavity in a plan view. The package front substrate is provided with a ground electrode and at least a wafer component is mounted on a mounting surface of the substrate; A resin material; and a mold clamping mechanism for opening and closing the molding mold, and the manufacturing device of the electronic component is used for manufacturing a first component having at least the wafer component and covering the wafer component in a plan view. And an electronic component of a hardened resin molded from the resin material,
所述電子部件的製造裝置具備：The manufacturing apparatus of the electronic component includes:
第一配置區域，在所述成型模合模的狀態下用於配置所述型腔中的所述第一部件；和A first configuration area configured to configure the first component in the cavity in a state where the molding die is closed; and
降壓部，在利用規定的合模壓力來合模所述成型模的狀態下，減小從所述成型模接收到的所述規定的合模壓力，The pressure reduction unit reduces the predetermined mold clamping pressure received from the molding mold in a state where the mold is clamped using a predetermined mold clamping pressure,
所述第一部件具有導電性，The first component is conductive,
在所述成型模合模的狀態下，利用在所述型腔中硬化而成的所述硬化樹脂，來對所述晶片部件、所述第一部件、和所述被安裝面中的至少一部分進行樹脂封裝，In a state where the molding die is clamped, at least a part of the wafer component, the first component, and the mounted surface is made of the hardened resin hardened in the cavity. With resin encapsulation,
在利用從所述規定的合模壓力減小的小壓力來按壓所述晶片部件的狀態下成型所述硬化樹脂。The hardened resin is molded in a state in which the wafer component is pressed with a small pressure reduced from the predetermined mold clamping pressure.
本發明的電子部件的製造裝置具有如下方式：The manufacturing apparatus of the electronic component of this invention has the following aspects:
所述第一部件相當於所述降壓部。The first member corresponds to the pressure reduction portion.
本發明的電子部件的製造裝置具有如下方式：The manufacturing apparatus of the electronic component of this invention has the following aspects:
進一步具備第二部件，所述第二部件與所述第一部件重疊接觸並具有導電性，It further includes a second member, which is in contact with the first member and has conductivity,
所述第一部件和所述第二部件中的至少任一個部件相當於所述降壓部。At least one of the first member and the second member corresponds to the pressure reduction portion.
本發明的電子部件的製造裝置具有如下方式：The manufacturing apparatus of the electronic component of this invention has the following aspects:
在利用所述規定的合模壓力來合模所述成型模的狀態下，所述第一部件與所述接地電極電連接。The first member is electrically connected to the ground electrode in a state where the molding die is closed using the predetermined clamping pressure.
本發明的電子部件的製造裝置具有如下方式：The manufacturing apparatus of the electronic component of this invention has the following aspects:
進一步具備第二部件，所述第二部件與所述接地電極和所述第一部件接觸並具有導電性，Further comprising a second member which is in contact with the ground electrode and the first member and has conductivity,
所述第一部件和所述第二部件中的至少任一個部件相當於所述降壓部。At least one of the first member and the second member corresponds to the pressure reduction portion.
本發明的電子部件的製造裝置具有如下方式：The manufacturing apparatus of the electronic component of this invention has the following aspects:
具備具有所述成型模和所述合模機構的至少一個成型模組，Equipped with at least one molding module having the molding die and the mold clamping mechanism,
一個所述成型模組和其它成型模組能夠裝卸。One said forming module and other forming modules can be attached and detached.
為了解決上述問題，本發明的電子部件的製造方法包括：In order to solve the above problems, a method for manufacturing an electronic component of the present invention includes:
準備成型模的步驟，所述成型模至少具有第一模和與所述第一模相對置的第二模；準備封裝前基板的步驟，所述封裝前基板在基板的被安裝面上設置有接地電極並至少安裝有晶片部件；以俯視時與形成於所述成型模的型腔重疊的方式供給所述封裝前基板的步驟；向所述型腔供給樹脂材料的步驟；對所述成型模進行合模的步驟；以及藉由在所述型腔中使由所述樹脂材料生成的流動性樹脂硬化而成型硬化樹脂的步驟，所述電子部件的製造方法用於製造至少具有所述晶片部件、俯視時覆蓋所述晶片部件的第一部件和所述硬化樹脂，The step of preparing a forming die, the forming die having at least a first die and a second die opposite to the first die; a step of preparing a substrate before packaging, the substrate before packaging is provided on a mounting surface of the substrate A ground electrode and at least a wafer component mounted; a step of supplying the pre-package substrate in a manner overlapping with a cavity formed in the mold in a plan view; a step of supplying a resin material to the cavity; A step of performing mold clamping; and a step of molding a hardened resin by hardening a fluid resin generated from the resin material in the cavity, the method of manufacturing an electronic component for manufacturing at least the wafer component A first part covering the wafer part and the hardened resin in a plan view,
所述電子部件的製造方法包括：The manufacturing method of the electronic component includes:
至少準備具有導電性的所述第一部件的步驟；A step of preparing at least the first member having conductivity;
以俯視時與所述晶片部件和所述型腔重疊的方式向所述晶片部件與所述型腔之間供給所述第一部件的工序；A step of supplying the first component between the wafer component and the cavity in a manner overlapping with the wafer component and the cavity in a plan view;
將所述第一部件配置在所述型腔中的第一配置區域上的步驟；以及A step of disposing the first component on a first disposition area in the cavity; and
利用規定的合模壓力來維持所述成型模合模的狀態的步驟，A step of maintaining a state of the mold clamping by using a predetermined mold clamping pressure,
在所述利用規定的合模壓力來維持所述成型模合模的狀態的步驟中，在所述晶片部件、所述第一部件、和所述被安裝面中的至少一部分浸漬到所述流動性樹脂中的狀態下成型所述硬化樹脂，In the step of maintaining the state of the mold clamping by the predetermined mold clamping pressure, at least a part of the wafer component, the first component, and the mounted surface is immersed in the flow. Molding the hardened resin in a state of a flexible resin,
在所述利用規定的合模壓力來維持所述成型模合模的狀態的步驟中，藉由降壓部來減小從所述成型模接收到的所述規定的合模壓力，並且利用從所述規定的合模壓力減小的小壓力來按壓所述晶片部件。In the step of maintaining the mold clamping state using a predetermined mold clamping pressure, the predetermined mold clamping pressure received from the molding mold is reduced by a pressure reduction unit, and The predetermined small clamping pressure reduces the pressing force to press the wafer component.
本發明的電子部件的製造方法具有如下方式：The manufacturing method of the electronic component of this invention has the following aspects:
所述第一部件相當於所述降壓部。The first member corresponds to the pressure reduction portion.
本發明的電子部件的製造方法具有如下方式：The manufacturing method of the electronic component of this invention has the following aspects:
進一步包括：Further includes:
準備具有導電性的第二部件的步驟；以及A step of preparing a second component having conductivity; and
以使所述第二部件與所述第一部件重疊接觸的方式將所述第二部件配置在所述型腔中的第二配置區域上的步驟，A step of disposing the second member on a second disposition region in the cavity in a manner that the second member and the first member are brought into overlapping contact,
所述第一部件和所述第二部件中的至少任一個部件相當於所述降壓部。At least one of the first member and the second member corresponds to the pressure reduction portion.
本發明的電子部件的製造方法具有如下方式：The manufacturing method of the electronic component of this invention has the following aspects:
在對所述成型模進行合模的步驟中使所述第一部件與所述接地電極電連接。In the step of clamping the molding die, the first component is electrically connected to the ground electrode.
本發明的電子部件的製造方法具有如下方式：The manufacturing method of the electronic component of this invention has the following aspects:
進一步包括：Further includes:
準備具有導電性的第二部件的步驟；以及A step of preparing a second component having conductivity; and
使所述第二部件與所述接地電極和所述第一部件接觸的步驟，A step of bringing the second member into contact with the ground electrode and the first member,
所述第一部件和所述第二部件中的至少任一個部件相當於所述降壓部。At least one of the first member and the second member corresponds to the pressure reduction portion.
本發明的電子部件的製造方法具有如下方式：The manufacturing method of the electronic component of this invention has the following aspects:
包括：準備具有所述成型模的至少一個成型模組的步驟，Including the step of preparing at least one forming module having the forming die,
一個所述成型模組和其它成型模組能夠裝卸。One said forming module and other forming modules can be attached and detached.
為了解決上述問題，本發明的電子部件具備：To solve the above problems, the electronic component of the present invention includes:
基板；Substrate
晶片部件，被安裝在所述基板的被安裝面上；A wafer component mounted on a mounted surface of the substrate;
多個連接部件，用於使形成於所述晶片部件的多個晶片電極和形成於所述基板的多個基板電極分別電連接；A plurality of connection members for electrically connecting a plurality of wafer electrodes formed on the wafer component and a plurality of substrate electrodes formed on the substrate;
多個外部電極，與所述多個基板電極分別相連並與外部設備電連接；Multiple external electrodes that are respectively connected to the multiple substrate electrodes and are electrically connected to external equipment;
第一部件，以俯視時覆蓋所述晶片部件的方式被設置在所述晶片部件的上方並具有導電性；The first component is provided above the wafer component in a manner of covering the wafer component in plan view and has conductivity;
封裝樹脂，被成型在所述基板的所述被安裝面上並至少對所述晶片部件、所述第一部件、和所述被安裝面中的至少一部分進行樹脂封裝；以及An encapsulation resin molded on the mounted surface of the substrate and resin-sealed at least a part of the wafer component, the first component, and the mounted surface; and
降壓部，在成型所述封裝樹脂時藉由從成型模接收規定的合模壓力而被壓縮變形。The pressure reduction unit is compressed and deformed by receiving a predetermined mold clamping pressure from a molding die when molding the sealing resin.
本發明的電子部件具有如下方式：The electronic component of the present invention has the following modes:
所述降壓部至少包括以下任一種材料：The pressure reducing portion includes at least any one of the following materials:
（1）纖維狀金屬；(1) Fibrous metal;
（2）具有波形狀的剖面形狀的金屬板；(2) a metal plate having a cross-sectional shape of a wave shape;
（3）導電性纖維；(3) conductive fibers;
（4）海綿狀的導電性樹脂。(4) Sponge-like conductive resin.
本發明的電子部件具有如下方式：The electronic component of the present invention has the following modes:
在所述成型模合模的狀態下，In a state where the forming mold is closed,
利用在所述型腔中硬化而成的硬化樹脂，來對所述晶片部件、所述第一部件、和所述被安裝面中的至少一部分進行樹脂封裝，並且在利用從所述規定的合模壓力減小的小壓力來按壓所述晶片部件的狀態下成型所述硬化樹脂，At least a part of the wafer component, the first component, and the mounted surface is resin-encapsulated with a hardened resin hardened in the cavity, and is used from the predetermined bonding material. Molding the hardened resin in a state where the die pressure is reduced to press the wafer component,
所述第一部件相當於所述降壓部。The first member corresponds to the pressure reduction portion.
本發明的電子部件具有如下方式：The electronic component of the present invention has the following modes:
進一步具備第二部件，所述第二部件與所述第一部件重疊接觸並具有導電性，It further includes a second member, which is in contact with the first member and has conductivity,
所述第一部件和所述第二部件中的至少任一個部件相當於所述降壓部。At least one of the first member and the second member corresponds to the pressure reduction portion.
本發明的電子部件具有如下方式：The electronic component of the present invention has the following modes:
所述第一部件與設置於所述基板的接地電極電連接。The first component is electrically connected to a ground electrode provided on the substrate.
本發明的電子部件具有如下方式：The electronic component of the present invention has the following modes:
進一步具備第二部件，所述第二部件與設置於所述基板的接地電極和所述第一部件接觸並具有導電性，It further includes a second member which is in contact with a ground electrode provided on the substrate and the first member and has conductivity,
所述第一部件和所述第二部件中的至少任一個部件相當於所述降壓部。At least one of the first member and the second member corresponds to the pressure reduction portion.
根據本發明，能夠製造如下的電子部件：該電子部件防止晶片部件的破損，並包括晶片部件和以覆蓋晶片部件的方式設置且具有導電性的第一部件。According to the present invention, it is possible to manufacture an electronic component that prevents breakage of a wafer component, and includes a wafer component and a first component that is provided so as to cover the wafer component and has conductivity.
如第4圖所示，作為第一例，在基板27上配置有用於覆蓋倒裝安裝後的晶片部件28的蓋狀的多孔金屬25。多孔金屬25的內側被封裝樹脂14樹脂封裝。多孔金屬25的內底面與晶片部件28的頂面緊貼。作為第二例，在晶片部件31的除引線焊接用焊盤11的周邊以外的區域配置有板狀的多孔金屬13，並且配置有覆蓋多孔金屬13的多孔金屬25。多孔金屬25的內側由封裝樹脂14進行了樹脂封裝。晶片部件31的頂面與多孔金屬13的下表面緊貼，多孔金屬13的上表面與多孔金屬25的內底面緊貼。作為第三例，在基板33上配置有用於覆蓋倒裝安裝後的晶片部件34的多孔金屬25。基板33與晶片部件34之間填滿下填料35。在三個例中的任一例中，多孔金屬25藉由其壁部的底面與接地電極4a緊貼而與接地電極4a電連接。多孔金屬25作為散熱板和電磁遮罩板來發揮功能。As shown in FIG. 4, as a first example, a lid-shaped porous metal 25 is disposed on the substrate 27 to cover the wafer component 28 after flip-chip mounting. The inside of the porous metal 25 is resin-sealed by the sealing resin 14. The inner bottom surface of the porous metal 25 is in close contact with the top surface of the wafer component 28. As a second example, a plate-like porous metal 13 is disposed in a region of the wafer component 31 other than the periphery of the wire bonding pad 11, and a porous metal 25 covering the porous metal 13 is disposed. The inside of the porous metal 25 is resin-sealed with the sealing resin 14. The top surface of the wafer member 31 is in close contact with the lower surface of the porous metal 13, and the upper surface of the porous metal 13 is in close contact with the inner bottom surface of the porous metal 25. As a third example, a porous metal 25 for covering the wafer component 34 after the flip-chip mounting is arranged on the substrate 33. The underfill 35 is filled between the substrate 33 and the wafer component 34. In any of the three examples, the porous metal 25 is electrically connected to the ground electrode 4a by the bottom surface of the wall portion being in close contact with the ground electrode 4a. The porous metal 25 functions as a heat radiation plate and an electromagnetic shielding plate.
（實施例1）(Example 1)
參照第1圖，對本發明的電子部件的實施例進行說明。本申請案中的任一幅圖為了易於理解均進行適當省略或誇張地示意性地描繪。對相同的結構要素使用相同的附圖標記，並適當省略說明。An embodiment of the electronic component of the present invention will be described with reference to FIG. 1. Any figure in this application is schematically and appropriately omitted or exaggerated for ease of understanding. The same reference numerals are used for the same constituent elements, and descriptions thereof are appropriately omitted.
如第1圖的(a)部分所示，電子部件1具備基板2和搭載（安裝）在基板2上的半導體晶片3。作為基板2，例如可使用玻璃環氧層壓板、印刷基板、陶瓷基板、膜基底基板、金屬基底基板等。半導體晶片3由矽晶片或化合物半導體晶片等製造。作為半導體晶片3，例如搭載有功率器件、微處理器、高頻器件等。在第1圖中，以半導體晶片3中的形成有電路的主面（例如，作為形成有電路的面的主面）側向上的方式，在基板2上搭載有半導體晶片3（面朝上安裝）。換言之，半導體晶片3中的未形成有電路的面（副面）側被搭載在基板2上。As shown in part (a) of FIG. 1, the electronic component 1 includes a substrate 2 and a semiconductor wafer 3 mounted (mounted) on the substrate 2. Examples of the substrate 2 include a glass epoxy laminate, a printed substrate, a ceramic substrate, a film-based substrate, and a metal-based substrate. The semiconductor wafer 3 is manufactured from a silicon wafer, a compound semiconductor wafer, or the like. As the semiconductor wafer 3, for example, a power device, a microprocessor, a high-frequency device, and the like are mounted. In FIG. 1, a semiconductor wafer 3 (mounted face-up) is mounted on a substrate 2 such that a main surface on which a circuit is formed (for example, a main surface as a surface on which a circuit is formed) of the semiconductor wafer 3 faces upward. ). In other words, the surface (sub-surface) side of the semiconductor wafer 3 on which the circuit is not formed is mounted on the substrate 2.
在基板2的上表面上設置有多個佈線4。多個佈線4的一端（內側端：靠近半導體晶片3的一端）構成與半導體晶片3的焊盤電連接（以下簡稱為“連接”）的基板電極5。多個佈線4的另一端（外側端：遠離半導體晶片3的一端）經由設置在基板2的內部的通孔佈線6和內部佈線（未圖示）與設置在基板2的下表面上的連接盤7分別連接。連接盤7在基板2的下表面中被設置為格子（grid）狀。A plurality of wirings 4 are provided on the upper surface of the substrate 2. One end (inner end: end close to the semiconductor wafer 3) of the plurality of wirings 4 constitutes a substrate electrode 5 that is electrically connected to a pad of the semiconductor wafer 3 (hereinafter simply referred to as “connection”). The other end (outside end: end remote from the semiconductor wafer 3) of the plurality of wirings 4 passes through the through-hole wiring 6 and internal wiring (not shown) provided inside the substrate 2 and the land provided on the lower surface of the substrate 2 7 Connect separately. The land 7 is provided in a grid shape in the lower surface of the substrate 2.
在基板2的上表面中，除基板電極5的表面以外，設置有阻焊膜8，其為用於保護多個佈線4的絕緣性樹脂覆膜。在基板2的下表面中，除各連接盤7的表面以外，設置有阻焊膜9。在各連接盤7上分別設置有與外部設備所具有的外部電極連接的焊錫球（外部電極）10。較佳對設置在基板2上的佈線4、通孔佈線6、內部佈線（未圖示）以及連接盤7分別使用電阻率較小的銅（Cu）。On the upper surface of the substrate 2, in addition to the surface of the substrate electrode 5, a solder resist film 8 is provided, which is an insulating resin film for protecting the plurality of wirings 4. A solder resist film 9 is provided on the lower surface of the substrate 2 in addition to the surface of each land 7. A solder ball (external electrode) 10 connected to an external electrode of an external device is provided on each land 7. It is preferable to use copper (Cu) having a small resistivity for the wiring 4, the through-hole wiring 6, the internal wiring (not shown), and the land 7 provided on the substrate 2.
半導體晶片3藉由黏合劑（未圖示）被安裝在形成於基板2的阻焊膜8上。半導體晶片3還可以藉由導電性漿料被安裝在形成於基板2的由銅箔構成的晶片焊接用焊盤上。在半導體晶片3的主面側沿半導體晶片3的周圍設置有多個引線焊接用焊盤11。多個焊盤11借助由金線或銅線構成的接合線（連接部件）12與基板電極5分別連接。The semiconductor wafer 3 is mounted on a solder resist film 8 formed on the substrate 2 with an adhesive (not shown). The semiconductor wafer 3 may be mounted on a wafer bonding pad made of a copper foil formed on the substrate 2 with a conductive paste. A plurality of wire bonding pads 11 are provided on the main surface side of the semiconductor wafer 3 along the periphery of the semiconductor wafer 3. The plurality of pads 11 are respectively connected to the substrate electrode 5 via a bonding wire (connection member) 12 made of a gold wire or a copper wire.
在半導體晶片3上，除設置於半導體晶片3的外緣內側的多個焊盤11的區域以外，設置有多孔金屬（porous metal）13。多孔金屬13為板狀的纖維狀部件。半導體晶片3的主面和多孔金屬13的下表面直接接觸並緊貼（以下適當地稱作“接觸”）。A porous metal 13 is provided on the semiconductor wafer 3 except for a region of a plurality of pads 11 provided inside the outer edge of the semiconductor wafer 3. The porous metal 13 is a plate-like fibrous member. The main surface of the semiconductor wafer 3 and the lower surface of the porous metal 13 are directly in contact with each other (hereinafter referred to as “contact” as appropriate).
作為多孔金屬13，例如可使用銅（Cu）、鋁（Al）、鎳（Ni）、不銹鋼（SUS）等。由於在多孔金屬13的內部存在多個空孔（三維連通孔），因此比一般金屬輕。由於多孔金屬13為金屬，因此具有高導熱性。由於多孔金屬13為纖維狀並在內部存在多個三維連通孔，因此具有優異的應力鬆弛特性。由此，當多孔金屬13被按壓到半導體晶片3時，多孔金屬13壓縮變形。因此，能防止半導體晶片3的破損。Examples of the porous metal 13 include copper (Cu), aluminum (Al), nickel (Ni), and stainless steel (SUS). Since the porous metal 13 has a plurality of voids (three-dimensional communicating pores), it is lighter than a general metal. Since the porous metal 13 is a metal, it has high thermal conductivity. Since the porous metal 13 is fibrous and has a plurality of three-dimensional communication holes therein, it has excellent stress relaxation characteristics. Thus, when the porous metal 13 is pressed against the semiconductor wafer 3, the porous metal 13 is deformed by compression. Therefore, breakage of the semiconductor wafer 3 can be prevented.
可以將多孔金屬13的三維連通孔的內徑製造到μm級。可以將多孔金屬13設為纖維狀的結構。因此，在多孔金屬的端面可形成多個包括金屬纖維的端部和彎曲部的微小的凹凸（突起）。由此，容易將多孔金屬與其它導電體等連接。第1圖的(a)部分所示的多孔金屬13作為釋放半導體晶片3所發出的熱的散熱板來發揮功能。The inner diameter of the three-dimensional communication hole of the porous metal 13 can be manufactured to the order of μm. The porous metal 13 may have a fibrous structure. Therefore, a plurality of minute irregularities (protrusions) including the end portion of the metal fiber and the bent portion can be formed on the end surface of the porous metal. This makes it easy to connect the porous metal to another conductor or the like. The porous metal 13 shown in part (a) of FIG. 1 functions as a heat sink that releases heat generated from the semiconductor wafer 3.
在基板2的上表面上以覆蓋半導體晶片3、多個佈線4、阻焊膜8、接合線12及多孔金屬13的側面的方式設置有封裝樹脂14。換言之，利用封裝樹脂14來對安裝在基板2的上表面上的半導體晶片3、多個佈線4、阻焊膜8、接合線12及多孔金屬13的側面進行樹脂封裝。在本申請案中，“利用封裝樹脂14來進行樹脂封裝”是指至少將半導體晶片3所具有的電路、多個佈線4和接合線12等連接部件與外部電絕緣、以及利用封裝樹脂14來覆蓋多孔金屬13的至少一部分這兩個含義。An encapsulating resin 14 is provided on the upper surface of the substrate 2 so as to cover the side surfaces of the semiconductor wafer 3, the plurality of wirings 4, the solder resist film 8, the bonding wires 12, and the porous metal 13. In other words, the side surfaces of the semiconductor wafer 3, the plurality of wirings 4, the solder resist film 8, the bonding wires 12, and the porous metal 13 mounted on the upper surface of the substrate 2 are resin-sealed with the sealing resin 14. In the present application, “resin encapsulation using the encapsulating resin 14” refers to electrically insulating at least the connecting members such as the circuit, the plurality of wirings 4 and the bonding wires 12 included in the semiconductor wafer 3 from the outside, and using the encapsulating resin 14 to These two meanings cover at least a part of the porous metal 13.
以多孔金屬13的表面（頂面）露出的方式設置封裝樹脂14。作為封裝樹脂14，例如可使用熱硬化性的環氧樹脂、矽酮樹脂等。由於半導體晶片3和多孔金屬13直接接觸，因此能提高電子部件1的散熱效果。在形成封裝樹脂14的階段，完成具有作為散熱板發揮功能的多孔金屬13的電子部件1。The sealing resin 14 is provided so that the surface (top surface) of the porous metal 13 is exposed. As the sealing resin 14, for example, a thermosetting epoxy resin, a silicone resin, or the like can be used. Since the semiconductor wafer 3 and the porous metal 13 are in direct contact, the heat radiation effect of the electronic component 1 can be improved. At the stage of forming the encapsulating resin 14, the electronic component 1 having the porous metal 13 functioning as a heat sink is completed.
第1圖的(b)部分表示第1圖的(a)部分所示的電子部件的變形例。將俯視形狀比多孔金屬13更大的多孔金屬15進一步層壓在多孔金屬13上。多孔金屬15為板狀的纖維狀部件。俯視時多孔金屬15在多孔金屬15的內側包括多孔金屬13。當以作為剖視圖的第1圖的(b)部分為例進行說明時，在本申請案中“俯視”是指沿與基板2的上表面垂直的方向（第1圖的(b)部分中的上下方向）觀察。第1圖的(b)部分所示的多孔金屬13、15作為釋放半導體晶片3所發出的熱的散熱板來發揮功能。Part (b) of FIG. 1 shows a modified example of the electronic component shown in part (a) of FIG. 1. A porous metal 15 having a larger plan shape than the porous metal 13 is further laminated on the porous metal 13. The porous metal 15 is a plate-like fibrous member. The porous metal 15 includes the porous metal 13 inside the porous metal 15 in a plan view. When taking part (b) of FIG. 1 as a cross-sectional view as an example, “plan view” in the present application refers to a direction perpendicular to the upper surface of the substrate 2 (part (b) of FIG. 1) Up and down) observation. The porous metals 13 and 15 shown in part (b) of FIG. 1 function as a heat radiating plate that releases heat emitted from the semiconductor wafer 3.
多孔金屬15與接合線12之間藉由封裝樹脂14電絕緣。以覆蓋多孔金屬13和多孔金屬15的側面的方式設置封裝樹脂14。多孔金屬15的露出面積大於第1圖的(a)部分所示的多孔金屬13的俯視面積。因此，能進一步提高電子部件1的散熱效果。板狀的多孔金屬13作為防止位於其上方的板狀的多孔金屬15的下表面與接合線12之間的接觸的間隔件來發揮功能。這在其它實施例中也相同。The porous metal 15 and the bonding wire 12 are electrically insulated by an encapsulating resin 14. The sealing resin 14 is provided so as to cover the sides of the porous metal 13 and the porous metal 15. The exposed area of the porous metal 15 is larger than the planar area of the porous metal 13 shown in part (a) of FIG. 1. Therefore, the heat radiation effect of the electronic component 1 can be further improved. The plate-shaped porous metal 13 functions as a spacer that prevents contact between the lower surface of the plate-shaped porous metal 15 and the bonding wire 12 located above it. This is the same in other embodiments.
作為又一變形例，能夠將俯視形狀與電子部件1相同的多孔金屬15層壓在多孔金屬13上而不會使其相對於電子部件1沿圖中的水平方向偏移。在該情況下，能夠將多孔金屬15的俯視面積增大至與電子部件1相同的俯視面積，並能使多孔金屬15的頂面和側面露出。因此，能夠更進一步提高電子部件1的散熱效果。As another modification, the porous metal 15 having the same shape as the electronic component 1 in plan view can be laminated on the porous metal 13 without being offset from the electronic component 1 in the horizontal direction in the figure. In this case, the planar area of the porous metal 15 can be increased to the same planar area as that of the electronic component 1, and the top and side surfaces of the porous metal 15 can be exposed. Therefore, the heat radiation effect of the electronic component 1 can be further improved.
根據本實施例，在不借助封裝樹脂14等絕緣膜的情況下，使多孔金屬13緊貼並層壓在半導體晶片3上。由於半導體晶片3和多孔金屬13直接接觸，因此能夠將半導體晶片3所發出的熱有效地釋放到外部。此外，能夠在多孔金屬13上進一步層壓俯視面積比多孔金屬13更大的多孔金屬15。由此，由於作為散熱板來發揮功能的多孔金屬15的俯視面積較大，因此能進一步提高電子部件1的散熱效果。According to this embodiment, the porous metal 13 is closely adhered and laminated on the semiconductor wafer 3 without using an insulating film such as the sealing resin 14. Since the semiconductor wafer 3 and the porous metal 13 are in direct contact, the heat emitted from the semiconductor wafer 3 can be efficiently released to the outside. Further, the porous metal 13 can be further laminated with the porous metal 15 having a larger plan area than the porous metal 13. Thereby, since the planar area of the porous metal 15 which functions as a heat sink is large, the heat radiation effect of the electronic component 1 can be further improved.
也可以在電子部件1中位於最上位的多孔金屬13（參照第1圖的(a)部分）和多孔金屬15（參照第1圖的(b)部分）的表面（圖中為上表面）上設置由封裝樹脂14構成的層。該層由穿過多孔金屬13和多孔金屬15後硬化而成的封裝樹脂14構成。較佳地該層盡可能薄。這些在其它實施例中也相同。The surface of the porous metal 13 (refer to part (a) in FIG. 1) and the porous metal 15 (refer to part (b) in FIG. 1) located on the top of the electronic component 1 may be on the top surface A layer made of the sealing resin 14 is provided. This layer is made of an encapsulating resin 14 that is hardened after passing through the porous metal 13 and the porous metal 15. Preferably this layer is as thin as possible. These are the same in other embodiments.
（實施例2）(Example 2)
參照第2圖，對本發明的電子部件的實施例進行說明。與第1圖所示的實施例的不同點在於，不是使用引線焊接技術來安裝半導體晶片，而是使用倒裝技術來安裝（倒裝安裝）半導體晶片。An embodiment of the electronic component of the present invention will be described with reference to FIG. 2. The difference from the embodiment shown in FIG. 1 is that instead of using a wire bonding technique to mount a semiconductor wafer, a flip chip technique is used to mount (flip mount) the semiconductor wafer.
如第2圖的(a)部分所示，電子部件16具備基板17和搭載在基板17上的半導體晶片18。在第2圖中，以半導體晶片18的主面側朝下的方式，在基板17上搭載有半導體晶片18（面朝下安裝）。換言之，以半導體晶片18的副面側朝上的方式，在基板17上搭載有半導體晶片18。As shown in part (a) of FIG. 2, the electronic component 16 includes a substrate 17 and a semiconductor wafer 18 mounted on the substrate 17. In FIG. 2, the semiconductor wafer 18 is mounted on the substrate 17 with the main surface side of the semiconductor wafer 18 facing downward (face-down mounting). In other words, the semiconductor wafer 18 is mounted on the substrate 17 with the side of the secondary surface of the semiconductor wafer 18 facing upward.
與產品對應地，在基板17的上表面上設置有多個佈線4。多個佈線4的一端（內側：靠近半導體晶片18的一側）構成與半導體晶片18的焊盤11連接的基板電極19。各基板電極19經由作為突起狀電極的凸塊（連接部件）20與設置於半導體晶片18的各個倒裝焊接用焊盤11連接。多個佈線4的另一端（外側：遠離半導體晶片18的一側）經由設置在基板17的內部的通孔佈線6和內部佈線（未圖示）與設置在基板17的下表面上的連接盤7分別連接。在各連接盤7上分別設置有與外部設備所具有的外部電極連接的焊錫球10。Corresponding to the product, a plurality of wirings 4 are provided on the upper surface of the substrate 17. One end (inner side: side closer to the semiconductor wafer 18) of the plurality of wirings 4 constitutes a substrate electrode 19 connected to the pad 11 of the semiconductor wafer 18. Each of the substrate electrodes 19 is connected to each of the flip-chip bonding pads 11 provided on the semiconductor wafer 18 via bumps (connecting members) 20 as protruding electrodes. The other ends (outside: the side remote from the semiconductor wafer 18) of the plurality of wirings 4 pass through-hole wirings 6 and internal wirings (not shown) provided inside the substrate 17 and the land provided on the lower surface of the substrate 17 7 Connect separately. A solder ball 10 connected to an external electrode of an external device is provided on each land 7.
在半導體晶片18的上側（半導體晶片18的副面側）設置有多孔金屬21。多孔金屬21為板狀的纖維狀部件。在第2圖的(a)部分中，俯視形狀與半導體晶片18相同的多孔金屬21被層壓在半導體晶片18上而不會沿圖中的水平方向偏移。第2圖的(a)部分所示的多孔金屬21作為釋放半導體晶片18所發出的熱的散熱板來發揮功能。A porous metal 21 is provided on the upper side of the semiconductor wafer 18 (on the side of the semiconductor wafer 18). The porous metal 21 is a plate-like fibrous member. In part (a) of FIG. 2, the porous metal 21 having the same shape as the semiconductor wafer 18 in plan view is laminated on the semiconductor wafer 18 without being shifted in the horizontal direction in the figure. The porous metal 21 shown in part (a) of FIG. 2 functions as a heat sink that releases heat generated from the semiconductor wafer 18.
也可以藉由對半導體晶片18的副面進行研磨而去除絕緣膜等，例如以使作為原材料的矽（Si）露出的方式減薄半導體晶片18的厚度。還可以在半導體晶片18的副面上形成具有導電性的薄膜等。由此，使半導體晶片18中的副面的整個面與多孔金屬21直接接觸。因此，能提高電子部件16中的導熱性，並能提高電子部件16的散熱效果。The secondary surface of the semiconductor wafer 18 may be polished to remove the insulating film or the like, and the thickness of the semiconductor wafer 18 may be reduced, for example, to expose silicon (Si) as a raw material. It is also possible to form a conductive thin film or the like on the secondary surface of the semiconductor wafer 18. Thereby, the entire surface of the secondary surface in the semiconductor wafer 18 is brought into direct contact with the porous metal 21. Therefore, the thermal conductivity in the electronic component 16 can be improved, and the heat radiation effect of the electronic component 16 can be improved.
在基板17的上表面上設置有半導體晶片18、多個佈線4、阻焊膜8、凸塊20及封裝樹脂14。以覆蓋多孔金屬21的側面的方式設置封裝樹脂14。以使多孔金屬21的表面（頂面）露出的方式設置封裝樹脂14。半導體晶片18的副面和俯視形狀與半導體晶片18的俯視形狀相同的多孔金屬21直接接觸而不會相對於半導體晶片18沿圖中的水平方向偏移。因此，與實施例1（參照第1圖的(a)部分）相比，能進一步提高電子部件16的散熱效果。在形成封裝樹脂14的階段，完成具有作為散熱板來發揮功能的多孔金屬21的電子部件16。A semiconductor wafer 18, a plurality of wirings 4, a solder resist film 8, a bump 20, and an encapsulating resin 14 are provided on the upper surface of the substrate 17. The sealing resin 14 is provided so as to cover the side surface of the porous metal 21. The sealing resin 14 is provided so that the surface (top surface) of the porous metal 21 is exposed. The secondary surface of the semiconductor wafer 18 and the porous metal 21 having the same planar shape as the planar shape of the semiconductor wafer 18 are in direct contact without being offset from the semiconductor wafer 18 in the horizontal direction in the figure. Therefore, compared with Example 1 (refer to the part (a) of FIG. 1), the heat radiation effect of the electronic component 16 can be further improved. At the stage of forming the encapsulating resin 14, the electronic component 16 having the porous metal 21 functioning as a heat sink is completed.
第2圖的(b)部分表示第2圖的(a)部分所示的電子部件的變形例。在半導體晶片18的副面上層壓有俯視形狀與電子部件16相同的多孔金屬21a。層壓多孔金屬21a而不會使其相對於半導體晶片18沿圖中的水平方向偏移。多孔金屬21a為板狀的纖維狀部件。第2圖的(b)部分所示的多孔金屬21a作為釋放半導體晶片18所發出的熱的散熱板來發揮功能。Part (b) of FIG. 2 shows a modified example of the electronic component shown in part (a) of FIG. 2. A porous metal 21 a having the same shape as the electronic component 16 in plan view is laminated on the secondary surface of the semiconductor wafer 18. The porous metal 21 a is laminated without being offset from the semiconductor wafer 18 in the horizontal direction in the figure. The porous metal 21a is a plate-like fibrous member. The porous metal 21 a shown in part (b) of FIG. 2 functions as a heat sink that releases heat generated from the semiconductor wafer 18.
封裝樹脂14以使多孔金屬21a的頂面和側面露出的方式僅被設置在基板17與多孔金屬21a之間。因此，由於多孔金屬21a的露出面積較大，因此能進一步提高電子部件16的散熱效果。作為多孔金屬21a，也可以層壓俯視時存在於電子部件16的內側並且俯視形狀比半導體晶片18更大的多孔金屬21a。可以以覆蓋俯視形狀比半導體晶片18更大的多孔金屬21a的側面的方式設置封裝樹脂14。The sealing resin 14 is provided only between the substrate 17 and the porous metal 21a so that the top surface and the side surfaces of the porous metal 21a are exposed. Therefore, since the exposed area of the porous metal 21a is large, the heat radiation effect of the electronic component 16 can be further improved. As the porous metal 21 a, a porous metal 21 a having a shape larger than that of the semiconductor wafer 18 when viewed from the inside of the electronic component 16 in plan view may be laminated. The encapsulating resin 14 may be provided so as to cover the side surface of the porous metal 21 a having a larger plan shape than the semiconductor wafer 18.
根據本實施例，使半導體晶片18的副面的整個面和多孔金屬21直接接觸。由此，能提高電子部件16中的導熱性。因此，能進一步將半導體晶片18所發出的熱有效地釋放到外部。此外，由於能夠使多孔金屬21、21a的露出面積與半導體晶片18的俯視面積相同或者大於半導體晶片18的俯視面積，因此能進一步提高電子部件16的散熱效果。According to this embodiment, the entire surface of the secondary surface of the semiconductor wafer 18 is brought into direct contact with the porous metal 21. Thereby, the thermal conductivity in the electronic component 16 can be improved. Therefore, the heat emitted from the semiconductor wafer 18 can be efficiently released to the outside. In addition, since the exposed areas of the porous metals 21 and 21a can be the same as or larger than the plan view area of the semiconductor wafer 18, the heat dissipation effect of the electronic component 16 can be further improved.
此外，將半導體晶片18的副面的整個面研磨至不會對形成於主面的電路帶來不良影響的程度。由此，能夠減薄電子部件16的厚度。In addition, the entire surface of the secondary surface of the semiconductor wafer 18 is polished to such an extent that it does not adversely affect a circuit formed on the primary surface. This can reduce the thickness of the electronic component 16.
（實施例3）(Example 3)
參照第3圖，對本發明的電子部件的實施例進行說明。如第3圖所示，電子部件22具備基板23和搭載在基板23上的半導體晶片24。與實施例2相同，使用倒裝技術以使半導體晶片24的主面側朝下的方式將半導體晶片24搭載在基板23。An embodiment of the electronic component of the present invention will be described with reference to FIG. 3. As shown in FIG. 3, the electronic component 22 includes a substrate 23 and a semiconductor wafer 24 mounted on the substrate 23. As in Embodiment 2, the semiconductor wafer 24 is mounted on the substrate 23 using a flip-chip technique so that the main surface side of the semiconductor wafer 24 faces downward.
在第3圖中，多孔金屬25被形成為包圍半導體晶片24的蓋（lid）狀形狀。多孔金屬25為蓋狀的纖維狀部件。蓋狀形狀藉由衝壓加工來預先形成。因此，俯視時在多孔金屬25的內側具有空間。俯視時多孔金屬25的外側底面（圖中為外側的下表面）與電子部件22中電接地的接地電極4a連接。例如，藉由將多孔金屬25設為纖維狀的結構，從而在多孔金屬25的底面形成多個微小的端部和彎曲部。因此，能夠連接多孔金屬25和接地電極4a。第3圖所示的多孔金屬25作為釋放半導體晶片24所發出的熱的散熱板以及電磁遮罩板來發揮功能。In FIG. 3, the porous metal 25 is formed in a lid shape surrounding the semiconductor wafer 24. The porous metal 25 is a cover-like fibrous member. The lid-like shape is formed in advance by press working. Therefore, there is a space inside the porous metal 25 in a plan view. The outer bottom surface (the outer lower surface in the figure) of the porous metal 25 is connected to a ground electrode 4 a electrically grounded in the electronic component 22 in a plan view. For example, when the porous metal 25 has a fibrous structure, a plurality of minute ends and bent portions are formed on the bottom surface of the porous metal 25. Therefore, the porous metal 25 and the ground electrode 4a can be connected. The porous metal 25 shown in FIG. 3 functions as a heat radiating plate and an electromagnetic shielding plate which release heat generated from the semiconductor wafer 24.
在第3圖中，除多孔金屬25的表面（頂面）以外，俯視時在多孔金屬25的內側和外側設置有封裝樹脂14。因此，在半導體晶片24與多孔金屬25之間存在封裝樹脂14。多孔金屬25經由接地電極4a電接地，由此具有作為電磁遮罩板的功能。此外，多孔金屬25具有作為散熱板的功能。因此，如第3圖所示，能夠將具有蓋狀形狀的多孔金屬25作為電磁遮罩板和散熱板來使用。較佳形成在多孔金屬25與晶片部件24之間的硬化樹脂（封裝樹脂）14盡可能薄。這在其它實施例中也相同。In FIG. 3, in addition to the surface (top surface) of the porous metal 25, the encapsulating resin 14 is provided inside and outside the porous metal 25 in a plan view. Therefore, the encapsulating resin 14 exists between the semiconductor wafer 24 and the porous metal 25. The porous metal 25 has a function as an electromagnetic shield plate by being electrically grounded via the ground electrode 4a. In addition, the porous metal 25 has a function as a heat sink. Therefore, as shown in FIG. 3, the porous metal 25 having a lid-like shape can be used as an electromagnetic shield plate and a heat radiation plate. It is preferable that the hardening resin (encapsulating resin) 14 formed between the porous metal 25 and the wafer member 24 is as thin as possible. This is the same in other embodiments.
對多孔金屬25在電子部件22中作為電磁遮罩板來工作的情況進行說明。當對半導體晶片24供電並使半導體晶片24工作時，從半導體晶片24放射出電磁波。基於從半導體晶片24放射出的電磁波，在多孔金屬25中感應出雜訊電流。該雜訊電流成為無用輻射的原因。在電子部件22中多孔金屬25電接地。由此，雜訊電流借助由多孔金屬25、接地電極4a、通孔佈線6、內部佈線（未圖示）、接地用連接盤7a和接地用焊錫球10a構成的接地線流出到電子部件22的外部。因此，能有效地抑制無用輻射。此外，由於多孔金屬25、接地電極4a、通孔佈線6、內部佈線（未圖示）及接地用連接盤7a分別由Cu形成，因此具有較小的電阻值。因此，能夠使雜訊電流進一步有效地流出到電子部件22的外部。此外，因從電子部件22的外部飛來的電磁波而感應的雜訊電流流出到電子部件22的外部。因此，能防止起因於因從電子部件22的外部飛來的電磁波而感應的雜訊電流的電子部件22的誤操作。A case where the porous metal 25 operates as an electromagnetic shielding plate in the electronic component 22 will be described. When power is supplied to the semiconductor wafer 24 and the semiconductor wafer 24 is operated, electromagnetic waves are emitted from the semiconductor wafer 24. Based on the electromagnetic wave emitted from the semiconductor wafer 24, a noise current is induced in the porous metal 25. This noise current becomes the cause of unwanted radiation. The porous metal 25 is electrically grounded in the electronic component 22. As a result, the noise current flows out to the electronic component 22 via the ground wire composed of the porous metal 25, the ground electrode 4a, the through-hole wiring 6, the internal wiring (not shown), the ground connection pad 7a, and the ground solder ball 10a. external. Therefore, unwanted radiation can be effectively suppressed. In addition, since the porous metal 25, the ground electrode 4a, the through-hole wiring 6, the internal wiring (not shown), and the ground connection pad 7a are each formed of Cu, they have small resistance values. Therefore, the noise current can be more effectively flowed to the outside of the electronic component 22. In addition, a noise current induced by electromagnetic waves flying from the outside of the electronic component 22 flows out of the electronic component 22. Therefore, it is possible to prevent an erroneous operation of the electronic component 22 due to a noise current induced by an electromagnetic wave flying from the outside of the electronic component 22.
根據本實施例，在電子部件22中，將多孔金屬25形成為包圍半導體晶片24的蓋狀形狀。將多孔金屬25的外側底面與電接地的接地電極4a連接。由此，多孔金屬25具有作為電磁遮罩板的功能。因此，能夠使因從半導體晶片24放射出的電磁波而感應的雜訊電流從多孔金屬25經由接地線流出到電子部件22的外部。此外，多孔金屬25具有包圍半導體晶片24的周圍和上方的蓋狀形狀。因此，多孔金屬25除作為散熱板的功能以外還具有作為電磁遮罩板的優良的功能。According to the present embodiment, in the electronic component 22, the porous metal 25 is formed into a lid-like shape surrounding the semiconductor wafer 24. The outer bottom surface of the porous metal 25 is connected to a ground electrode 4a which is electrically grounded. Thereby, the porous metal 25 has a function as an electromagnetic shielding plate. Therefore, the noise current induced by the electromagnetic wave emitted from the semiconductor wafer 24 can flow from the porous metal 25 to the outside of the electronic component 22 through the ground line. In addition, the porous metal 25 has a cover-like shape surrounding the periphery and the upper side of the semiconductor wafer 24. Therefore, the porous metal 25 has an excellent function as an electromagnetic shielding plate in addition to its function as a heat sink.
此外，在本實施例中，除多孔金屬25的頂面（圖中為上表面）以外，俯視時在多孔金屬25的內側和外側設置有封裝樹脂14。不限於此，也可以俯視時僅在多孔金屬25的內側設置有封裝樹脂14。由此，由於多孔金屬25的頂面和側面露出，因此能進一步提高散熱效果。In addition, in this embodiment, in addition to the top surface (upper surface in the figure) of the porous metal 25, the encapsulating resin 14 is provided inside and outside the porous metal 25 in a plan view. Not limited to this, the encapsulating resin 14 may be provided only inside the porous metal 25 in a plan view. Accordingly, since the top and side surfaces of the porous metal 25 are exposed, the heat radiation effect can be further improved.
在本實施例中，使用了具有蓋狀形狀的多孔金屬25。多孔金屬25被形成為平板狀的部分和外框狀的部分為一體的部件（具有導電性的第一部件）。作為代替此的變形例，也可以在接地電極4a上形成突起狀或外框狀的金屬、突起狀或外框狀的導電性樹脂等的其它導電性部件（具有導電性的第二部件），來代替外框狀的部分。“突起狀”包括柱狀、環狀、外框局部間斷的形狀等。其它導電性部件也可以具有可撓性等的可變形性。In this embodiment, a porous metal 25 having a lid-like shape is used. The porous metal 25 is a member (a first member having conductivity) formed as a flat plate portion and a frame-shaped portion as a single body. As an alternative to this, another conductive member (a second member having conductivity) such as a protruding or frame-shaped metal, a protruding or frame-shaped conductive resin may be formed on the ground electrode 4a, To replace the frame-shaped part. The “protrusion shape” includes a columnar shape, a ring shape, and a shape in which the outer frame is partially discontinued. Other conductive members may have deformability such as flexibility.
具體而言，也可以使用接合技術來在接地電極4a上形成接合線、金屬帶等。在這種情況下，將突起狀的金屬、導電性樹脂、接合線、金屬帶等的最上部的高度位置設置為等於或高於半導體晶片24的頂面（圖中為上表面）的高度位置即可。也可以應用使用目前為止所說明的其它導電性部件的變形例和具有板狀形狀的多孔金屬的結構，來代替使用具有蓋狀形狀的多孔金屬25的結構。Specifically, a bonding wire, a metal tape, or the like may be formed on the ground electrode 4a using a bonding technique. In this case, the height position of the uppermost portion of the protruding metal, conductive resin, bonding wire, metal tape, etc. is set equal to or higher than the height position of the top surface (upper surface in the figure) of the semiconductor wafer 24. Just fine. Instead of the structure using the porous metal 25 having a lid shape, a structure using a modified example of another conductive member and a porous metal having a plate shape as described so far may be applied.
（實施例4）(Example 4)
參照第4圖，對本發明的電子部件的實施例進行說明。如第4圖的(a)部分所示，電子部件26具備基板27和搭載在基板27上的半導體晶片28。與實施例3相同，半導體晶片28以半導體晶片28的主面側朝下的方式搭載在基板27上。An embodiment of the electronic component of the present invention will be described with reference to FIG. 4. As shown in part (a) of FIG. 4, the electronic component 26 includes a substrate 27 and a semiconductor wafer 28 mounted on the substrate 27. As in Embodiment 3, the semiconductor wafer 28 is mounted on the substrate 27 with the main surface side of the semiconductor wafer 28 facing downward.
在第4圖的(a)部分中，多孔金屬25被形成為俯視時包圍半導體晶片28的蓋狀形狀。多孔金屬25為蓋狀的纖維狀部件。多孔金屬25的板部所具有的內底面（內側的下表面）與半導體晶片28的副面直接接觸。多孔金屬25中的外側壁部所具有的底面（圖中為外側的下表面）與電子部件26中電接地的接地電極4a直接接觸。除多孔金屬25中的表面（頂面）以外，在多孔金屬25的內側和外側設置有封裝樹脂14。In part (a) of FIG. 4, the porous metal 25 is formed in a lid shape that surrounds the semiconductor wafer 28 in a plan view. The porous metal 25 is a cover-like fibrous member. The inner bottom surface (the lower surface on the inner side) of the plate portion of the porous metal 25 is in direct contact with the secondary surface of the semiconductor wafer 28. The bottom surface (outside lower surface in the figure) of the outer wall portion in the porous metal 25 is in direct contact with the ground electrode 4 a which is electrically grounded in the electronic component 26. In addition to the surface (top surface) in the porous metal 25, an encapsulating resin 14 is provided inside and outside the porous metal 25.
根據第4圖的(a)部分所示的結構，多孔金屬25的內底面與半導體晶片28的副面緊貼。多孔金屬25的外側壁部所具有的底面藉由與電子部件26的接地電極4a緊貼而與接地電極4a連接。由於多孔金屬25的板部所具有的內底面與半導體晶片28的副面緊貼，因此能提高電子部件26的導熱性。因此，能夠將半導體晶片28所發出的熱進一步有效地釋放到外部。此外，多孔金屬25的外側底面與電子部件26的接地電極4a連接。由此，能夠使因半導體晶片28工作而感應的雜訊電流從多孔金屬25經由接地線流出到電子部件26的外部。由此，能夠將多孔金屬25進一步有效地用作散熱板和電磁遮罩板。According to the structure shown in part (a) of FIG. 4, the inner bottom surface of the porous metal 25 is in close contact with the secondary surface of the semiconductor wafer 28. The bottom surface of the outer wall portion of the porous metal 25 is connected to the ground electrode 4 a by being in close contact with the ground electrode 4 a of the electronic component 26. Since the inner bottom surface of the plate portion of the porous metal 25 is in close contact with the secondary surface of the semiconductor wafer 28, the thermal conductivity of the electronic component 26 can be improved. Therefore, the heat emitted from the semiconductor wafer 28 can be further effectively released to the outside. The outer bottom surface of the porous metal 25 is connected to the ground electrode 4 a of the electronic component 26. As a result, the noise current induced by the operation of the semiconductor wafer 28 can flow from the porous metal 25 to the outside of the electronic component 26 through the ground line. Thereby, the porous metal 25 can be further effectively used as a heat radiation plate and an electromagnetic shielding plate.
第4圖的(b)部分為第4圖的(a)部分所示的電子部件26的一變形例。如第4圖的(b)部分所示，電子部件29具備基板30和搭載在基板30上的半導體晶片31。半導體晶片31以主面側朝上的方式搭載在基板30上。因此，可藉由接合線12來連接半導體晶片31和基板30。Part (b) of FIG. 4 is a modification of the electronic component 26 shown in part (a) of FIG. 4. As shown in part (b) of FIG. 4, the electronic component 29 includes a substrate 30 and a semiconductor wafer 31 mounted on the substrate 30. The semiconductor wafer 31 is mounted on the substrate 30 with the main surface side facing upward. Therefore, the semiconductor wafer 31 and the substrate 30 can be connected by the bonding wires 12.
在第4圖的(b)部分中，在半導體晶片31的頂面（圖中為上表面）的除焊盤11的周邊以外的區域（中央部）中緊貼配置有板狀的多孔金屬13。在板狀的多孔金屬13的上表面上層壓配置有具有蓋狀形狀的多孔金屬25。俯視時，多孔金屬25包括半導體晶片31。多孔金屬25的外側底面與電子部件29的接地電極4a連接。除多孔金屬25的表面（頂面；圖中為上表面）以外，在多孔金屬25的內側和外側設置有封裝樹脂14。因此，根據第4圖的(b)部分所示的結構，能夠將多孔金屬13和多孔金屬25進一步有效地用作散熱板和電磁遮罩板。In part (b) of FIG. 4, a plate-shaped porous metal 13 is closely arranged in a region (central portion) of the top surface (upper surface in the figure) of the semiconductor wafer 31 except the periphery of the pad 11. . A porous metal 25 having a lid-like shape is laminated and arranged on the upper surface of the plate-shaped porous metal 13. In a plan view, the porous metal 25 includes a semiconductor wafer 31. The outer bottom surface of the porous metal 25 is connected to the ground electrode 4 a of the electronic component 29. Except for the surface (top surface; upper surface in the figure) of the porous metal 25, an encapsulating resin 14 is provided inside and outside the porous metal 25. Therefore, according to the structure shown in part (b) of FIG. 4, the porous metal 13 and the porous metal 25 can be further effectively used as a heat radiation plate and an electromagnetic shielding plate.
在第4圖的(a)部分、(b)部分中，除多孔金屬25的頂面以外，俯視時在多孔金屬25的內側和外側設置有封裝樹脂14。不限於此，俯視時也可以僅在多孔金屬25的內側設置有封裝樹脂14。在該情況下，由於多孔金屬25的頂面和側面露出，因此由這些頂面和側面來散熱。因此，能進一步提高散熱效果。根據上述結構，能夠將多孔金屬25進一步有效地用作散熱板和電磁遮罩板。In parts (a) and (b) of FIG. 4, in addition to the top surface of the porous metal 25, the sealing resin 14 is provided inside and outside the porous metal 25 in a plan view. Not limited to this, the encapsulating resin 14 may be provided only inside the porous metal 25 in a plan view. In this case, since the top surface and side surfaces of the porous metal 25 are exposed, heat is dissipated by these top surfaces and side surfaces. Therefore, the heat radiation effect can be further improved. According to the above configuration, the porous metal 25 can be further effectively used as a heat radiation plate and an electromagnetic shielding plate.
第4圖的(c)部分為第4圖的(a)部分所示的電子元件26的另一變形例。如第4圖的(c)部分所示，電子部件32具備基板33和搭載在基板33上的半導體晶片34。半導體晶片34以主面側朝下的方式搭載在基板33（面朝下地安裝）上。與第4圖的(a)部分的不同點在於，半導體晶片34、凸塊20和基板電極19藉由下填料35而被安裝在基板33上。Part (c) of FIG. 4 is another modified example of the electronic component 26 shown in part (a) of FIG. 4. As shown in part (c) of FIG. 4, the electronic component 32 includes a substrate 33 and a semiconductor wafer 34 mounted on the substrate 33. The semiconductor wafer 34 is mounted on the substrate 33 (mounted face down) with the main surface side facing down. The difference from part (a) of FIG. 4 is that the semiconductor wafer 34, the bumps 20, and the substrate electrode 19 are mounted on the substrate 33 by the underfill 35.
在第4圖的(c)部分中，多孔金屬25被形成為包圍半導體晶片34的蓋狀形狀。多孔金屬25的內底面與半導體晶片34的副面接觸。多孔金屬25的外側底面與電子部件32中電接地的接地電極4a連接。與第4圖的(a)部分、(b)部分中所說明的實施例不同，俯視時在多孔金屬25的內側和外側未設置有封裝樹脂。由於多孔金屬25的頂面和側面露出，因此能夠將多孔金屬25進一步有效地用作散熱板和電磁遮罩板。此外，由於俯視時在多孔金屬25的內側和外側未設置有封裝樹脂，因此能簡化製程並能抑制製造成本。In part (c) of FIG. 4, the porous metal 25 is formed in a lid-like shape surrounding the semiconductor wafer 34. The inner bottom surface of the porous metal 25 is in contact with the secondary surface of the semiconductor wafer 34. The outer bottom surface of the porous metal 25 is connected to a ground electrode 4 a which is electrically grounded in the electronic component 32. Unlike the embodiments described in parts (a) and (b) of FIG. 4, the inside and outside of the porous metal 25 are not provided with a sealing resin in a plan view. Since the top and side surfaces of the porous metal 25 are exposed, the porous metal 25 can be further effectively used as a heat sink plate and an electromagnetic shielding plate. In addition, since no sealing resin is provided on the inside and outside of the porous metal 25 in a plan view, the manufacturing process can be simplified and the manufacturing cost can be suppressed.
根據第4圖所示的各方式，第一，使具有蓋狀形狀的多孔金屬25的內底面直接與半導體晶片接觸，或者經由多孔金屬13與半導體晶片接觸。第二，將多孔金屬25的外側底面與電子部件的接地電極4a連接。第4圖的第(a)到(c)部分所示的多孔金屬25作為釋放半導體晶片28、31、34所發出的熱的散熱板及電磁遮罩板來發揮功能。根據第4圖所示的各方式，即使在半導體晶片以何種方式安裝在基板上的情況下，也能夠將多孔金屬25進一步有效地用作散熱板和電磁遮罩板。According to each aspect shown in FIG. 4, first, the inner bottom surface of the porous metal 25 having a lid-like shape is directly brought into contact with the semiconductor wafer, or is brought into contact with the semiconductor wafer via the porous metal 13. Second, the outer bottom surface of the porous metal 25 is connected to the ground electrode 4a of the electronic component. The porous metal 25 shown in parts (a) to (c) of FIG. 4 functions as a heat radiating plate and an electromagnetic shielding plate for releasing heat emitted from the semiconductor wafers 28, 31, and 34. According to each aspect shown in FIG. 4, even when a semiconductor wafer is mounted on a substrate, the porous metal 25 can be further effectively used as a heat radiation plate and an electromagnetic shielding plate.
（實施例5）(Example 5)
參照第5圖，對本發明的電子部件的實施例進行說明。本實施例的電子部件均具備具有導電性的第一部件和第二部件。以下所說明的第一部件與第二部件的組合均至少作為散熱板來發揮功能。An embodiment of the electronic component of the present invention will be described with reference to FIG. 5. Each of the electronic components of this embodiment includes a first member and a second member having conductivity. The combination of the first member and the second member described below all functions at least as a heat sink.
關於本實施例的電子部件，構成第一部件的材料與構成第二部件的材料的組合可以考慮多種。從構成部件的材料的組合這一觀點來看，本實施例的電子部件具有以下四種方式。Regarding the electronic component of the present embodiment, various combinations of materials constituting the first component and materials constituting the second component can be considered. From the viewpoint of a combination of materials constituting the components, the electronic component of this embodiment has the following four modes.
如第5圖的(a)部分所示，在第一方式中，第一部件由設置在晶片部件上方的金屬板21c構成。第二部件由配置在板狀的第一部件上的多孔金屬21b構成。多孔金屬21b為板狀的纖維狀部件。As shown in part (a) of FIG. 5, in the first aspect, the first member is composed of a metal plate 21 c provided above the wafer member. The second member is composed of a porous metal 21b disposed on the plate-like first member. The porous metal 21b is a plate-like fibrous member.
在未圖示的第二方式中，第一部件由設置在晶片部件上方的板狀的纖維狀多孔金屬構成。第二部件由配置在板狀的第一部件上的金屬板構成。In a second aspect (not shown), the first member is composed of a plate-like fibrous porous metal provided above a wafer member. The second member is composed of a metal plate disposed on the plate-like first member.
如第5圖的(b)部分所示，在協力廠商式中，第一部件由配置在包圍晶片部件的框狀的第二部件上的多孔金屬25a構成。多孔金屬25a為板狀的纖維狀部件。第二部件由包圍晶片部件的框狀的金屬板25b構成。框狀的金屬板25b與接地電極4a連接。As shown in part (b) of FIG. 5, in the third-party manufacturer's formula, the first member is made of a porous metal 25 a disposed on a frame-shaped second member surrounding the wafer member. The porous metal 25a is a plate-like fibrous member. The second member is composed of a frame-shaped metal plate 25b surrounding the wafer member. The frame-shaped metal plate 25b is connected to the ground electrode 4a.
在未圖示的第四方式中，第一部件由配置在包圍晶片部件的框狀的第二部件上的金屬板構成。第二部件由框狀的纖維狀多孔金屬構成。框狀的多孔金屬與接地電極4a連接。In a fourth aspect (not shown), the first member is configured by a metal plate disposed on a frame-shaped second member surrounding the wafer member. The second member is composed of a frame-shaped fibrous porous metal. A frame-shaped porous metal is connected to the ground electrode 4a.
在上述四種方式中的任一方式中，有時第一部件的下表面也與晶片部件的頂面直接接觸。有時第一部件的下表面與晶片部件的頂面不接觸。在該情況下，第一部件的下表面與晶片部件的頂面之間被封裝樹脂（硬化樹脂）層填滿。In any of the above-mentioned four modes, the lower surface of the first component may be in direct contact with the top surface of the wafer component. The lower surface of the first component may not be in contact with the top surface of the wafer component. In this case, the space between the lower surface of the first component and the top surface of the wafer component is filled with a sealing resin (hardened resin) layer.
代替上述四種方式，第一部件和第二部件這兩部件也可以由多孔金屬構成。也可以在第一部件和第二部件中增加具有導電性的第三部件。多個部件中的至少一個部件由多孔金屬構成即可。Instead of the above-mentioned four methods, the two components of the first component and the second component may be made of porous metal. A third member having conductivity may be added to the first member and the second member. At least one of the plurality of members may be made of a porous metal.
在任一方式中，藉由利用規定的合模壓力來對上模49和下模45進行合模並維持該狀態（合模狀態），從而晶片部件和基板被浸漬到流動性樹脂中。在合模狀態下，利用規定的合模壓力來按壓由多孔金屬構成的部件並使其變形。換言之，由多孔金屬構成的部件被壓縮變形。由此，晶片部件所受到的壓力小於規定的合模壓力。因此，能防止晶片部件的破損。In either method, the upper mold 49 and the lower mold 45 are closed by using a predetermined mold clamping pressure and maintained in this state (clamped state), so that the wafer component and the substrate are immersed in the fluid resin. In the mold clamping state, a member made of porous metal is pressed and deformed by a predetermined mold clamping pressure. In other words, a member made of a porous metal is compressed and deformed. As a result, the pressure applied to the wafer component is less than a predetermined clamping pressure. Therefore, breakage of the wafer component can be prevented.
在第一方式、第二方式中，在合模狀態下使板狀的兩個部件緊貼，並固定在晶片部件上方的封裝樹脂層上。因此，第一部件與第二部件的組合作為散熱板來發揮功能。In the first aspect and the second aspect, the two plate-shaped members are brought into close contact with each other in the mold clamping state, and are fixed on the encapsulating resin layer above the wafer component. Therefore, the combination of the first member and the second member functions as a heat sink.
在協力廠商式、第四方式中，在合模狀態下將框狀部件按壓在基板上表面的接地電極上。由此，第一部件和第二部件與接地電極連接。因此，第一部件與第二部件的組合作為散熱板和電磁遮罩板來發揮功能。In the third-party type and the fourth method, the frame-shaped member is pressed against the ground electrode on the upper surface of the substrate in the mold clamping state. Thereby, the first member and the second member are connected to the ground electrode. Therefore, the combination of the first member and the second member functions as a heat radiation plate and an electromagnetic shielding plate.
代替金屬板，也可以使用金屬箔、具有優異的導熱性的非金屬材料等。作為非金屬材料，例如可使用碳化矽（SiC）、氮化鋁（AlN）等燒結材料。使用氮化鋁的部件作為散熱板來發揮功能。Instead of a metal plate, a metal foil, a non-metal material having excellent thermal conductivity, or the like may be used. As the non-metallic material, for example, sintered materials such as silicon carbide (SiC) and aluminum nitride (AlN) can be used. The parts using aluminum nitride function as a heat sink.
（實施例6）(Example 6)
參照第6圖～第8圖，對本發明的電子部件的製造方法進行說明。首先，參照第6圖，對使用離型膜來一併運送樹脂材料和多孔金屬的製程進行說明。如第6圖的(a)部分所示，在X-Y工作臺36上覆蓋離型膜37。作為離型膜37，較佳使用具有一定程度的硬度的離型膜37以便施加張力。在X-Y工作臺36上覆蓋離型膜37之後，利用吸附機構（未圖示）將離型膜37吸附到X-Y工作臺36上。切割離型膜37，只保留吸附後的離型膜37的必要部分。在第6圖的(a)部分中，將離型膜37切割成比X-Y工作臺36稍大。A method for manufacturing an electronic component according to the present invention will be described with reference to FIGS. 6 to 8. First, referring to FIG. 6, a process of using a release film to transport a resin material and a porous metal together will be described. As shown in part (a) of FIG. 6, a release film 37 is covered on the X-Y table 36. As the release film 37, a release film 37 having a certain degree of hardness is preferably used in order to apply tension. After the release film 37 is covered on the X-Y table 36, the release film 37 is adsorbed on the X-Y table 36 by an adsorption mechanism (not shown). The release film 37 is cut, and only a necessary part of the release film 37 after adsorption is left. In part (a) of FIG. 6, the release film 37 is cut to be slightly larger than the X-Y table 36.
接著，在離型膜37上的規定位置上載置多孔金屬38。為了使多孔金屬38對準X-Y工作臺36，較佳在X-Y工作臺36上設置突起（銷等），在多孔金屬38上設置凹處、開口（孔）等。也可以在X-Y工作臺36上設置凹處，在多孔金屬38上設置突起（銷等）。Next, a porous metal 38 is placed on a predetermined position on the release film 37. In order to align the porous metal 38 with the X-Y table 36, it is preferable to provide protrusions (pins, etc.) on the X-Y table 36, and provide recesses, openings (holes), and the like on the porous metal 38. A recess may be provided on the X-Y table 36, and a protrusion (pin, etc.) may be provided on the porous metal 38.
接著，使用材料運送機構39，使材料收容框40移動至X-Y工作臺36的上方並停止。材料收容框40具備：貫通孔41，沿上下具有開口；周緣部42，被形成在貫通孔41的周圍；以及吸附槽43，被設置在周緣部42的下表面上。材料運送機構39具備用於保持材料收容框40的保持部39a和用於保持離型膜37的保持部39b。在材料運送機構39中，保持部39a和保持部39b被設置為獨立工作。材料運送機構39的保持部39b能夠對離型膜37施加朝向外側方向作用的張力。Next, using the material transport mechanism 39, the material storage frame 40 is moved above the X-Y table 36 and stopped. The material storage frame 40 includes a through hole 41 having openings along the upper and lower sides, a peripheral edge portion 42 formed around the through hole 41, and a suction groove 43 provided on a lower surface of the peripheral edge portion 42. The material transport mechanism 39 includes a holding portion 39 a for holding the material storage frame 40 and a holding portion 39 b for holding the release film 37. In the material transport mechanism 39, the holding portions 39a and 39b are provided to operate independently. The holding portion 39 b of the material conveying mechanism 39 can apply tension to the release film 37 in an outward direction.
接著，如第6圖的(b)部分所示，藉由使材料收容框40下降，將材料收容框40載置在被吸附到X-Y工作臺36上的離型膜37上。在材料收容框40被載置在X-Y工作臺36上的狀態下，多孔金屬38配置在材料收容框40的貫通孔41中。在材料收容框40載置在X-Y工作臺36上的狀態下，藉由材料收容框40、離型膜37和多孔金屬38來封閉貫通孔41的下方開口。由此，一體地處理材料收容框40、離型膜37和多孔金屬38。貫通孔41作為收容樹脂材料的樹脂材料收容部來發揮功能。Next, as shown in part (b) of FIG. 6, the material storage frame 40 is lowered, and the material storage frame 40 is placed on the release film 37 that is adsorbed on the X-Y table 36. In a state where the material storage frame 40 is placed on the X-Y table 36, the porous metal 38 is arranged in the through hole 41 of the material storage frame 40. In a state where the material storage frame 40 is placed on the X-Y table 36, the opening below the through hole 41 is closed by the material storage frame 40, the release film 37, and the porous metal 38. Thereby, the material storage frame 40, the release film 37, and the porous metal 38 are integrally processed. The through-hole 41 functions as a resin material storage portion that stores a resin material.
接著，從樹脂材料投入機構（參照第16圖）向作為樹脂材料收容部的貫通孔41投入規定量的樹脂材料44。作為樹脂材料44，可使用常溫下為顆粒狀、粉狀、粒狀、膠狀、糊狀的樹脂或者常溫下為液狀的樹脂（液狀樹脂）等樹脂材料。在本實施例中，對使用顆粒狀樹脂（顆粒樹脂）來作為樹脂材料44的情況進行說明。Next, a predetermined amount of the resin material 44 is injected from the resin material input mechanism (see FIG. 16) into the through-hole 41 as the resin material storage portion. As the resin material 44, a resin material such as a granular, powdery, granular, gelatinous, paste-like resin or a liquid resin (liquid resin) at normal temperature can be used. In this embodiment, a case where a particulate resin (particulate resin) is used as the resin material 44 will be described.
接著，如第6圖的(c)部分所示，使用設置於材料收容框40的周緣部42的吸附槽43來吸附離型膜37。停止X-Y工作臺36對離型膜37的吸附。由此，將離型膜37吸附到周緣部42的下表面上。在該階段，一體地處理材料收容框40、離型膜37、多孔金屬38和樹脂材料44。Next, as shown in part (c) of FIG. 6, the release film 37 is adsorbed using the adsorption groove 43 provided in the peripheral edge portion 42 of the material storage frame 40. The adsorption of the release film 37 by the X-Y table 36 is stopped. Thereby, the release film 37 is adsorbed on the lower surface of the peripheral edge portion 42. At this stage, the material storage frame 40, the release film 37, the porous metal 38, and the resin material 44 are processed integrally.
接著，使用材料運送機構39，從X-Y工作臺36一併抬起材料收容框40、離型膜37、多孔金屬38和樹脂材料44。由於多孔金屬38比一般金屬輕，因此能使用吸附槽43來吸附離型膜37。由此，能夠將多孔金屬38和樹脂材料44保持在離型膜37上。如果需要，可使用材料運送機構39的保持部39b，來對離型膜37施加朝向外側方向作用的張力。Next, using the material transport mechanism 39, the material storage frame 40, the release film 37, the porous metal 38, and the resin material 44 are lifted together from the X-Y table 36. Since the porous metal 38 is lighter than a general metal, it is possible to use the adsorption tank 43 to adsorb the release film 37. Accordingly, the porous metal 38 and the resin material 44 can be held on the release film 37. If necessary, the holding portion 39b of the material conveying mechanism 39 may be used to apply tension to the release film 37 in an outward direction.
接著，參照第7圖，關於向設置于樹脂封裝裝置的下模中的型腔供給多孔金屬38和樹脂材料44的製程進行說明。如第7圖的(a)部分所示，在樹脂封裝裝置中，下模45具備：框狀的周面部件46，具有貫通孔；和底面部件47，被嵌入到周面部件46的貫通孔中並相對于周面部件46能夠升降。周面部件46和底面部件47一同構成下模45。被周面部件46和底面部件47包圍的空間構成下模45中的型腔48。Next, a process for supplying the porous metal 38 and the resin material 44 to the cavity provided in the lower mold of the resin sealing device will be described with reference to FIG. 7. As shown in part (a) of FIG. 7, in the resin sealing device, the lower mold 45 includes: a frame-shaped peripheral surface member 46 having a through hole; and a bottom surface member 47 inserted into the through hole of the peripheral surface member 46. The intermediate part can be raised and lowered with respect to the peripheral member 46. The peripheral surface member 46 and the bottom surface member 47 together constitute a lower mold 45. The space surrounded by the peripheral surface member 46 and the bottom surface member 47 constitutes a cavity 48 in the lower mold 45.
如第7圖的(a)部分所示，使用材料運送機構39來使材料收容框40移動至下模45的規定位置並停止。由於設置於材料收容框40的吸附槽43吸附離型膜37，因此多孔金屬38和樹脂材料44被保持在離型膜37上而不致落下。As shown in part (a) of FIG. 7, the material transporting mechanism 39 is used to move and stop the material storage frame 40 to a predetermined position of the lower mold 45. Since the adsorption tank 43 provided in the material storage frame 40 adsorbs the release film 37, the porous metal 38 and the resin material 44 are held on the release film 37 without falling.
接著，使材料收容框40下降並載置在下模45的型面上。在該階段，離型膜37、多孔金屬38和樹脂材料44尚未供給到型腔48內。Next, the material storage frame 40 is lowered and placed on the molding surface of the lower mold 45. At this stage, the release film 37, the porous metal 38, and the resin material 44 have not been supplied into the cavity 48.
接著，將材料收容框40載置在下模45的型面上之後，停止材料收容框40的吸附槽43對離型膜37的吸附。藉由將材料收容框40載置在下模45的型面上，從而材料收容框40從內置於下模45的加熱器（未圖示）受到熱。離型膜37因受熱而軟化並伸展。在離型膜37軟化後的狀態下，藉由設置於下模45的吸附孔（未圖示）而將離型膜37吸附到型腔48中的型面上。由此，離型膜37沿型腔48的形狀被吸附而不會產生褶皺或下垂。Next, after the material storage frame 40 is placed on the molding surface of the lower mold 45, the adsorption of the release film 37 by the adsorption tank 43 of the material storage frame 40 is stopped. By placing the material storage frame 40 on the profile of the lower mold 45, the material storage frame 40 receives heat from a heater (not shown) built into the lower mold 45. The release film 37 is softened and stretched by being heated. In a state where the release film 37 is softened, the release film 37 is adsorbed on the mold surface in the cavity 48 through an adsorption hole (not shown) provided in the lower mold 45. Accordingly, the release film 37 is adsorbed along the shape of the cavity 48 without wrinkles or sagging.
接著，如第7圖的(b)部分所示，藉由離型膜37被吸附到型腔48中的型面上，從而多孔金屬38和樹脂材料44被供給到型腔48內。由於離型膜37、多孔金屬38和樹脂材料44被一併供給到型腔48內，因此能夠將多孔金屬38切實地供給到型腔48內。多孔金屬38具有比型腔48稍小的俯視形狀。因此，供給到型腔48內的多孔金屬38在其之後實質上保持相同的位置。Next, as shown in part (b) of FIG. 7, the release film 37 is adsorbed onto the molding surface in the cavity 48, so that the porous metal 38 and the resin material 44 are supplied into the cavity 48. Since the release film 37, the porous metal 38, and the resin material 44 are supplied into the cavity 48 together, the porous metal 38 can be reliably supplied into the cavity 48. The porous metal 38 has a plan view slightly smaller than the cavity 48. Therefore, the porous metal 38 supplied into the cavity 48 remains substantially the same position thereafter.
接著，將離型膜37、多孔金屬38和樹脂材料44一併供給到型腔48中。之後，使用材料運送機構39從下模45抬起材料收容框40。由於離型膜37、多孔金屬38和樹脂材料44被供給到型腔48中，因此只有材料收容框40被材料運送機構39保持。由此，能夠將離型膜37、多孔金屬38和樹脂材料44從材料收容框40穩定地供給到型腔48中。Next, the release film 37, the porous metal 38, and the resin material 44 are supplied to the cavity 48 together. After that, the material storage frame 40 is lifted from the lower mold 45 using the material transport mechanism 39. Since the release film 37, the porous metal 38, and the resin material 44 are supplied into the cavity 48, only the material storage frame 40 is held by the material transport mechanism 39. Thereby, the release film 37, the porous metal 38, and the resin material 44 can be stably supplied into the cavity 48 from the material storage frame 40.
下面，參照第8圖，關於使用利用壓縮成型法（Compression molding method）的樹脂封裝裝置（參照第16圖）對安裝在基板上的晶片部件和多孔金屬38進行樹脂封裝的製程進行說明。如第8圖的(a)部分所示，在樹脂封裝裝置中與下模45相對置地設置有上模49。上模49和下模45一同構成成型模。藉由吸附或夾持而將安裝有晶片部件50的基板51（封裝前基板）固定在上模49的型面上。第8圖表示在基板51上經由凸塊52安裝有晶片部件50的例。Next, referring to FIG. 8, a process of resin-encapsulating a wafer component and a porous metal 38 mounted on a substrate using a resin packaging device (see FIG. 16) using a compression molding method will be described. As shown in part (a) of FIG. 8, an upper mold 49 is provided in the resin sealing device so as to face the lower mold 45. The upper die 49 and the lower die 45 together constitute a molding die. The substrate 51 (pre-package substrate) on which the wafer component 50 is mounted is fixed to the profile of the upper mold 49 by suction or clamping. FIG. 8 shows an example in which a wafer component 50 is mounted on a substrate 51 via a bump 52.
首先，如第8圖的(a)部分所示，在成型模開模的狀態下，使用基板運送機構（參照第16圖）將基板51運送至上模49的規定位置並固定在上模49的型面上。如第7圖所示，使用材料運送機構39將樹脂材料44、多孔金屬38和離型膜37一併供給到設置於下模45的型腔48中。藉由使用加熱器（未圖示）來加熱供給到下模45中的樹脂材料44並使其熔化，從而生成熔化樹脂53。First, as shown in part (a) of FIG. 8, the substrate 51 is transported to a predetermined position of the upper mold 49 using a substrate transport mechanism (refer to FIG. 16) while the mold is opened, and fixed to the upper mold 49. Profile. As shown in FIG. 7, the resin material 44, the porous metal 38, and the release film 37 are simultaneously supplied to the cavity 48 provided in the lower mold 45 using the material transport mechanism 39. The resin material 44 supplied to the lower mold 45 is heated and melted by using a heater (not shown), thereby generating a molten resin 53.
接著，使用合模機構（參照第16圖）對上模49和下模45進行合模。藉由合模，將安裝在基板51上的晶片部件50浸漬到型腔48內的熔化樹脂53中。Next, the upper mold 49 and the lower mold 45 are clamped using a mold clamping mechanism (see FIG. 16). The wafer component 50 mounted on the substrate 51 is dipped into the molten resin 53 in the cavity 48 by mold clamping.
在對上模49和下模45進行合模的過程中，較佳使用抽真空機構（未圖示）來對型腔48內進行抽吸並減壓。如此，能夠將殘留在型腔48內的空氣或熔化樹脂53中所包含的氣泡等排出到成型模（上模49和下模45）的外部。藉由對上模49和下模45進行合模，多孔金屬38被壓縮變形。In the process of clamping the upper mold 49 and the lower mold 45, it is preferable to use a vacuum mechanism (not shown) to suck and decompress the inside of the cavity 48. In this way, the air remaining in the cavity 48 or the air bubbles contained in the molten resin 53 can be discharged to the outside of the molding die (the upper die 49 and the lower die 45). By clamping the upper die 49 and the lower die 45, the porous metal 38 is compressed and deformed.
接著，使用驅動機構（未圖示）來使底面部件47上升。藉由使底面部件47上升，對型腔48內的熔化樹脂53施加規定的成型壓力（規定的合模壓力）。Next, the bottom member 47 is raised using a driving mechanism (not shown). When the bottom surface member 47 is raised, a predetermined molding pressure (a predetermined mold clamping pressure) is applied to the molten resin 53 in the cavity 48.
根據習知技術，在對熔化樹脂進行加壓以使其硬化之前，當由金屬構成的散熱板和晶片部件接觸時，對晶片部件施加規定的成型壓力。其結果，晶片部件有可能因成型壓力而破損。為了防止晶片部件的破損，藉由將優良導熱性部件設置於散熱板與晶片部件之間而進行樹脂封裝。According to the conventional technique, before the molten resin is pressurized to be hardened, a predetermined molding pressure is applied to the wafer member when the heat sink made of metal and the wafer member are in contact. As a result, the wafer component may be damaged by the molding pressure. In order to prevent breakage of the wafer component, a resin package is provided by placing an excellent thermally conductive component between the heat sink and the wafer component.
在本發明中，使用具有多個三維連通孔的多孔金屬38。此外，使用具有纖維狀結構的多孔金屬38。由此，多孔金屬38具有優異的應力鬆弛特性。具體而言，藉由對上模49和下模45進行合模，利用規定的成型壓力來壓縮多孔金屬38以使其變形。或者，利用施加到熔化樹脂53中的規定的成型壓力，來壓縮多孔金屬38以使其變形。這些在其它實施例中也相同。因此，在多孔金屬38和晶片部件50接觸或不接觸這兩種情況下，由於藉由多孔金屬38來減小成型壓力，能抑制施加到晶片部件50中的成型壓力。由此，在晶片部件50和多孔金屬38接觸及不接觸這兩種狀態下，能防止晶片部件的破損並進行樹脂封裝。In the present invention, a porous metal 38 having a plurality of three-dimensional communication holes is used. In addition, a porous metal 38 having a fibrous structure is used. Thereby, the porous metal 38 has excellent stress relaxation characteristics. Specifically, the upper mold 49 and the lower mold 45 are closed, and the porous metal 38 is compressed and deformed by a predetermined molding pressure. Alternatively, the porous metal 38 is compressed and deformed by a predetermined molding pressure applied to the molten resin 53. These are the same in other embodiments. Therefore, in both cases where the porous metal 38 and the wafer member 50 are in contact or not, since the forming pressure is reduced by the porous metal 38, the forming pressure applied to the wafer member 50 can be suppressed. This makes it possible to prevent damage to the wafer member and perform resin encapsulation in both the states where the wafer member 50 and the porous metal 38 are in contact or not.
接著，如第8圖的(b)部分所示，藉由使底面部件47上升規定的距離，從而在型腔48內使多孔金屬38和晶片部件50接觸。在多孔金屬38和晶片部件50接觸的狀態下，藉由繼續加熱熔化樹脂53而形成硬化樹脂54。在保持晶片部件50和多孔金屬38接觸的狀態下，利用硬化樹脂54對晶片部件50和多孔金屬38進行樹脂封裝。在該過程中，多孔金屬38以多孔金屬38的頂面和側面露出的狀態被固定在硬化樹脂54上。Next, as shown in part (b) of FIG. 8, the bottom surface member 47 is raised by a predetermined distance to bring the porous metal 38 into contact with the wafer member 50 in the cavity 48. In a state where the porous metal 38 is in contact with the wafer member 50, the hardened resin 54 is formed by continuously heating the molten resin 53. While the wafer member 50 and the porous metal 38 are held in contact with each other, the wafer member 50 and the porous metal 38 are resin-encapsulated with the hardening resin 54. In this process, the porous metal 38 is fixed to the hardened resin 54 in a state where the top and side surfaces of the porous metal 38 are exposed.
接著，如第8圖的(c)部分所示，在結束樹脂封裝之後，使用合模機構（參照第16圖）來使下模45下降。藉由該操作，對上模49和下模45進行開模。在開模之後，從上模49取出固定有多孔金屬38的成型品（封裝後基板）55。在本實施例中樹脂封裝後的成型品55相當於第2圖的(b)部分所示的電子部件16。Next, as shown in part (c) of FIG. 8, after the resin encapsulation is completed, the lower mold 45 is lowered using a mold clamping mechanism (see FIG. 16). With this operation, the upper die 49 and the lower die 45 are opened. After the mold is opened, the molded product (post-package substrate) 55 to which the porous metal 38 is fixed is taken out from the upper mold 49. The resin-molded molded product 55 in this embodiment corresponds to the electronic component 16 shown in part (b) of FIG. 2.
根據本實施例，作為散熱板，使用具有多個三維連通孔和纖維狀構造的多孔金屬38。由此，在待樹脂封裝的多孔金屬38和晶片部件50接觸的情況下，藉由多孔金屬38來緩和施加到晶片部件50中的成型壓力。因此，能夠抑制施加到晶片部件50中的成型壓力。由此，在晶片部件50和多孔金屬38接觸的狀態下，能防止晶片部件的破損並進行樹脂封裝。因此，由於能夠將晶片部件50所發出的熱有效地釋放到外部，因此能提高成型品（電子部件）55的散熱效果。According to this embodiment, as the heat sink, a porous metal 38 having a plurality of three-dimensional communication holes and a fibrous structure is used. Thus, in a case where the porous metal 38 to be resin-encapsulated is in contact with the wafer member 50, the molding pressure applied to the wafer member 50 is relaxed by the porous metal 38. Therefore, the molding pressure applied to the wafer component 50 can be suppressed. Accordingly, in a state where the wafer member 50 and the porous metal 38 are in contact with each other, the wafer member can be prevented from being damaged and the resin can be encapsulated. Therefore, since the heat emitted from the wafer component 50 can be efficiently released to the outside, the heat radiation effect of the molded article (electronic component) 55 can be improved.
（實施例7）(Example 7)
參照第9圖～第11圖，關於對由多孔金屬構成的多個散熱板和多個晶片部件一併進行樹脂密封的本發明的電子部件的製造方法進行說明。本實施例中所製造的電子部件的數量例如可以是一個，也可以是多個。由於基本製程與實施例5相同，因此簡化說明。A method for manufacturing an electronic component of the present invention in which a plurality of heat sink plates and a plurality of wafer components made of a porous metal are collectively resin-sealed will be described with reference to FIGS. 9 to 11. The number of electronic components manufactured in this embodiment may be, for example, one or a plurality. Since the basic process is the same as in Example 5, the description is simplified.
首先，如第9圖的(a)部分所示，在X-Y工作臺36上覆蓋離型膜37。切割離型膜37，只保留離型膜37的必要部分。First, as shown in part (a) of FIG. 9, a release film 37 is covered on the X-Y table 36. The release film 37 is cut, and only a necessary portion of the release film 37 remains.
接著，在離型膜37上的規定位置上載置多個多孔金屬38。也可以在離型膜37的規定區域或多個多孔金屬38上預先形成微量的黏附劑（未圖示）。在該情況下，多個多孔金屬38被黏附劑固定在離型膜37上。Next, a plurality of porous metals 38 are placed at predetermined positions on the release film 37. A small amount of an adhesive (not shown) may be formed in advance on a predetermined region of the release film 37 or on the plurality of porous metals 38. In this case, the plurality of porous metals 38 are fixed to the release film 37 by an adhesive.
接著，使用材料運送機構39來使材料收容框40移動至X-Y工作臺36的上方，並將材料收容框40載置在離型膜37上。在材料收容框40被載置在X-Y工作臺36上的狀態下，在材料收容框40的貫通孔41中配置有多個多孔金屬38。Next, the material storage frame 40 is moved above the X-Y table 36 using the material transport mechanism 39, and the material storage frame 40 is placed on the release film 37. In a state where the material storage frame 40 is placed on the X-Y table 36, a plurality of porous metals 38 are arranged in the through holes 41 of the material storage frame 40.
接著，如第9圖的(b)部分所示，從樹脂材料投入機構（參照第16圖）向貫通孔41投入規定量的樹脂材料44。與實施例5相同，使用顆粒樹脂來作為樹脂材料44。在貫通孔41中，樹脂材料44被投入到離型膜37和多個多孔金屬38上。Next, as shown in part (b) of FIG. 9, a predetermined amount of resin material 44 is introduced from the resin material input mechanism (see FIG. 16) into the through-hole 41. As in Example 5, a particulate resin was used as the resin material 44. In the through-hole 41, a resin material 44 is poured onto the release film 37 and the plurality of porous metals 38.
接著，如第9圖的(c)部分所示，使用材料運送機構39，從X-Y工作臺36一併抬起材料收容框40、離型膜37、多個多孔金屬38和樹脂材料44並運送。可根據需要，使用材料運送機構39的保持部39b對離型膜37施加朝向外側方向作用的張力，以便防止多個多孔金屬38和樹脂材料44落下。Next, as shown in part (c) of FIG. 9, using the material transport mechanism 39, the material storage frame 40, the release film 37, the plurality of porous metals 38, and the resin material 44 are lifted together from the XY table 36 and transported . If necessary, the holding portion 39 b of the material transport mechanism 39 may be used to apply tension acting on the release film 37 in an outward direction so as to prevent the plurality of porous metals 38 and the resin material 44 from falling.
接著，如第10圖的(a)部分所示，使用材料運送機構39來使材料收容框40移動至下模45的規定位置上，並進行設置於下模45的型腔48與材料收容框40之間的對準。接著，使材料收容框40下降並載置在下模45的型面上。離型膜37藉由從內置於下模45的加熱器（未圖示）受到熱而軟化並伸展。Next, as shown in part (a) of FIG. 10, the material transporting mechanism 39 is used to move the material storage frame 40 to a predetermined position of the lower mold 45, and the cavity 48 and the material storage frame provided in the lower mold 45 are performed. Alignment between 40. Next, the material storage frame 40 is lowered and placed on the molding surface of the lower mold 45. The release film 37 is softened and stretched by receiving heat from a heater (not shown) built into the lower mold 45.
接著，如第10圖的(b)部分所示，在離型膜37軟化後的狀態下，使用設置於下模45的吸附孔（未圖示），來將離型膜37吸附到型腔48中的型面上。離型膜37被吸附到下模45的型面上。由此，多個多孔金屬38和樹脂材料44被供給到型腔48內。由於利用黏附劑來固定多個多孔金屬38，因此多個多孔金屬38被分別供給到型腔48內的規定區域中。Next, as shown in part (b) of FIG. 10, in a state where the release film 37 is softened, the release film 37 is adsorbed to the cavity using an adsorption hole (not shown) provided in the lower mold 45. 48 in the profile. The release film 37 is attracted to the surface of the lower mold 45. As a result, the plurality of porous metals 38 and the resin material 44 are supplied into the cavity 48. Since the plurality of porous metals 38 are fixed by an adhesive, the plurality of porous metals 38 are respectively supplied into a predetermined region in the cavity 48.
接著，在將離型膜37、多個多孔金屬38和樹脂材料44一併供給到型腔48中之後，使用材料運送機構39從下模45抬起材料收容框40。由此，能夠將離型膜37、多個多孔金屬38和樹脂材料44從材料收容框40穩定地供給到型腔48中。Next, after the release film 37, the plurality of porous metals 38, and the resin material 44 are supplied into the cavity 48 together, the material storage frame 40 is lifted from the lower mold 45 using the material transport mechanism 39. Accordingly, the release film 37, the plurality of porous metals 38, and the resin material 44 can be stably supplied into the cavity 48 from the material storage frame 40.
接著，如第11圖的(a)部分所示，在成型模開模的狀態下，使用基板運送機構（參照第16圖）將基板51運送至上模49的規定位置並固定在上模49中。在基板51上安裝有多個晶片部件50。藉由使用加熱器（未圖示）來加熱供給到下模45中的樹脂材料44以使其熔化，從而生成熔化樹脂53。各多孔金屬38和各晶片部件50具有相同的俯視形狀。將各多孔金屬38和各晶片部件50定位成不會沿圖中的水平方向偏移，並將基板51固定在上模49的規定位置上。Next, as shown in part (a) of FIG. 11, the substrate 51 is transported to a predetermined position of the upper mold 49 using a substrate transport mechanism (refer to FIG. 16) while the mold is opened, and fixed in the upper mold 49. . A plurality of wafer components 50 are mounted on the substrate 51. The resin material 44 supplied to the lower mold 45 is heated by using a heater (not shown) to melt it, thereby generating a molten resin 53. Each porous metal 38 and each wafer member 50 have the same plan view shape. Each of the porous metal 38 and each of the wafer members 50 is positioned so as not to be shifted in the horizontal direction in the figure, and the substrate 51 is fixed at a predetermined position of the upper mold 49.
接著，使用合模機構（參照第16圖）對上模49和下模45進行合模。藉由合模，將安裝在基板51上的多個晶片部件50浸漬到型腔48內的熔化樹脂53中。Next, the upper mold 49 and the lower mold 45 are clamped using a mold clamping mechanism (see FIG. 16). The plurality of wafer components 50 mounted on the substrate 51 are dipped into the molten resin 53 in the cavity 48 by mold clamping.
接著，如第11圖的(b)部分所示，藉由使底面部件47上升規定的距離，從而在型腔48內使多個多孔金屬38和多個晶片部件50分別接觸。在多個晶片部件50和它們對應的多個多孔金屬38接觸的狀態下，藉由繼續加熱熔化樹脂53而形成硬化樹脂54。在保持多個晶片部件50和多個多孔金屬38接觸的狀態下，利用硬化樹脂54來對多個晶片部件50和多個多孔金屬38進行樹脂封裝。在該過程中，多個多孔金屬38以多個多孔金屬38的頂面露出的狀態分別固定在多個晶片部件50上。Next, as shown in part (b) of FIG. 11, by raising the bottom surface member 47 by a predetermined distance, the plurality of porous metals 38 and the plurality of wafer members 50 are brought into contact with each other in the cavity 48. In a state where the plurality of wafer components 50 and the corresponding plurality of porous metals 38 are in contact with each other, the hardened resin 54 is formed by continuously heating the molten resin 53. In a state where the plurality of wafer members 50 and the plurality of porous metals 38 are kept in contact, the plurality of wafer members 50 and the plurality of porous metals 38 are resin-encapsulated with the hardening resin 54. In this process, the plurality of porous metals 38 are respectively fixed to the plurality of wafer components 50 with the top surfaces of the plurality of porous metals 38 exposed.
接著，如第11圖的(c)部分所示，在結束樹脂封裝之後，使用合模機構（參照第16圖）來使下模45下降。藉由該動作，對上模49和下模45進行開模。在開模之後，從上模49取出在多個晶片部件50上分別層壓有多個多孔金屬38的成型品55。Next, as shown in part (c) of FIG. 11, after the resin encapsulation is completed, the lower mold 45 is lowered using a mold clamping mechanism (see FIG. 16). With this operation, the upper die 49 and the lower die 45 are opened. After the mold is opened, the molded product 55 in which a plurality of porous metals 38 are laminated on the plurality of wafer components 50 is taken out from the upper mold 49.
接著，按多個晶片部件50和與它們對應的多孔金屬38分別層壓的區域來切割取出後的成型品55。藉由切割成型品55而單片化為各個電子部件。經單片化的各個電子部件相當於第2圖的(a)部分所示的電子部件16。Next, the removed molded product 55 is cut into areas where the plurality of wafer members 50 and the corresponding porous metal 38 are laminated. The molded product 55 is singulated into individual electronic components. Each singulated electronic component corresponds to the electronic component 16 shown in part (a) of FIG. 2.
根據本實施例，作為散熱板，使用具有多個三維連通孔和纖維狀構造的多孔金屬38。因此，在多個多孔金屬38和多個晶片部件50接觸的情況下，藉由各多孔金屬38來緩和施加到各晶片部件50中的成型壓力。因此，能抑制施加到各晶片部件50中的成型壓力。由此，能夠在多個晶片部件50和多個多孔金屬38接觸的狀態下進行樹脂封裝。因此，由於經單片化的電子部件能夠將晶片部件50所發出的熱有效地釋放到外部，能提高散熱效果。According to this embodiment, as the heat sink, a porous metal 38 having a plurality of three-dimensional communication holes and a fibrous structure is used. Therefore, when the plurality of porous metals 38 are in contact with the plurality of wafer components 50, the molding pressure applied to each wafer component 50 is relaxed by each of the porous metals 38. Therefore, the molding pressure applied to each wafer component 50 can be suppressed. Thereby, resin sealing can be performed in a state where the plurality of wafer members 50 and the plurality of porous metals 38 are in contact. Therefore, the singulated electronic component can effectively release the heat emitted from the wafer component 50 to the outside, and the heat radiation effect can be improved.
作為變形例，有時在多個晶片部件50上分別層壓有一個多孔金屬38的成型品55本身相當於一個電子部件。其中一例為安裝在一張基板51上的多個晶片部件50成為一套並作為電路模組來發揮功能。有一種方式為具有多個同種晶片部件50的記憶體模組。有一種方式為具有多個異種晶片部件50的控制用電子模組。多個晶片部件50中也可以包含無源元件、感測器、濾波器等晶片部件、微電子機械系統（MEMS：Micro Electro Mechanical Systems）等器件和半導體晶片。也可以在多個晶片部件50上分別層壓有多孔金屬38，還可以在多個晶片部件50上層壓有公用的一張多孔金屬38。在對多個晶片部件50一併進行樹脂封裝時，可應用目前為止所說明的變形例。As a modification, the molded product 55 in which one porous metal 38 is laminated on each of the plurality of wafer components 50 may correspond to one electronic component. An example of this is that a plurality of wafer components 50 mounted on a single substrate 51 form a set and function as a circuit module. One method is a memory module having a plurality of chip components 50 of the same type. One method is a control electronic module having a plurality of heterogeneous wafer components 50. The plurality of wafer components 50 may include passive components, wafer components such as sensors and filters, devices such as micro electro mechanical systems (MEMS: Micro Electro Mechanical Systems), and semiconductor wafers. The porous metal 38 may be laminated on each of the plurality of wafer members 50, and a common piece of porous metal 38 may be laminated on each of the plurality of wafer members 50. When the plurality of wafer components 50 are collectively resin-sealed, the modifications described so far can be applied.
在對多個晶片部件50一併進行樹脂封裝時，使用與各晶片部件50分別對應的多個多孔金屬38。也可以使用多張與作為多個晶片部件50的一部分的多個晶片部件50對應的多孔金屬38。也可以使用與所有多個晶片部件50對應的一張多孔金屬38。即使在任何情況下，當多個晶片部件50的高度位置不同時，藉由多孔金屬38的壓縮變形，也能夠使成型品55的高度位置（第11圖的(c)部分中的下表面的位置）均勻。多個晶片部件50的高度位置不同的情況包括多個同種的晶片部件50的厚度不均的情況、多個異種的晶片部件50的厚度彼此不同的情況等。When a plurality of wafer members 50 are collectively resin-encapsulated, a plurality of porous metals 38 corresponding to the respective wafer members 50 are used. A plurality of pieces of the porous metal 38 corresponding to the plurality of wafer members 50 that are part of the plurality of wafer members 50 may be used. One piece of porous metal 38 corresponding to all of the plurality of wafer components 50 may be used. Even in any case, when the height positions of the plurality of wafer members 50 are different, the height position of the molded product 55 (the lower surface in part (c) of FIG. 11) can be made by the compression deformation of the porous metal 38 Location) uniform. The cases where the height positions of the plurality of wafer members 50 are different include the case where the thicknesses of the plurality of wafer members 50 of the same type are uneven, and the cases where the thicknesses of the plurality of different kinds of wafer members 50 are different from each other.
（實施例8）(Example 8)
參照第12圖～第14圖，對本發明的電子部件的製造方法的實施例進行說明。首先，如第12圖的(a)部分所示，將具有蓋狀形狀的多孔金屬56以上下（天地）相反（使頂面側朝下）的方式載置在X-Y工作臺36上的規定位置上。具有蓋狀形狀的多孔金屬56具有內部空間57。因此，藉由以上下相反的方式載置多孔金屬56，從而多孔金屬56的內部空間57作為收容樹脂材料的樹脂材料收容部來發揮功能。此外，在本實施例中示出不使用離型膜的例。An embodiment of a method for manufacturing an electronic component according to the present invention will be described with reference to FIGS. 12 to 14. First, as shown in part (a) of FIG. 12, a porous metal 56 having a lid-like shape is placed on a predetermined position on the XY table 36 so that the upper and lower sides (sky and earth) are opposite (with the top side facing downward). on. The porous metal 56 having a lid shape has an internal space 57. Therefore, by placing the porous metal 56 in a reverse manner from above to below, the internal space 57 of the porous metal 56 functions as a resin material housing portion that houses a resin material. In this embodiment, an example in which a release film is not used is shown.
接著，使用材料運送機構58，來使材料收容框59移動至X-Y工作臺36的上方並停止。材料收容框59具備：貫通孔41，沿上下具有開口；和周緣部60，形成在貫通孔41的周圍。材料運送機構58具備用於保持材料收容框59的保持部58a和用於保持多孔金屬56的保持部58b。在材料運送機構58中，保持部58a和保持部58b被設置為獨立工作。Next, the material conveyance mechanism 58 is used to move and stop the material storage frame 59 above the X-Y table 36. The material storage frame 59 includes a through hole 41 having openings along the upper and lower sides, and a peripheral portion 60 formed around the through hole 41. The material transport mechanism 58 includes a holding portion 58 a for holding the material storage frame 59 and a holding portion 58 b for holding the porous metal 56. In the material conveyance mechanism 58, the holding portions 58a and 58b are provided to operate independently.
接著，如第12圖的(b)部分所示，使材料收容框59下降，並以將多孔金屬56嵌入到材料收容框59的貫通孔41中的方式，將材料收容框59載置在X-Y工作臺36上。接著，從樹脂材料投入機構（參照第16圖）向作為樹脂材料收容部來發揮功能的多孔金屬56的內部空間57投入規定量的樹脂材料44。在本實施例中，對使用顆粒樹脂來作為樹脂材料44的情況進行說明。Next, as shown in part (b) of FIG. 12, the material storage frame 59 is lowered, and the porous metal 56 is inserted into the through hole 41 of the material storage frame 59, and the material storage frame 59 is placed on the XY On workbench 36. Next, a predetermined amount of the resin material 44 is injected from the resin material input mechanism (refer to FIG. 16) into the internal space 57 of the porous metal 56 that functions as the resin material storage portion. In this embodiment, a case where a particulate resin is used as the resin material 44 will be described.
接著，如第12圖的(c)部分所示，使用材料運送機構58，從X-Y工作臺36一併抬起材料收容框59、多孔金屬56和樹脂材料44。藉由材料運送機構58的保持部58a來保持材料收容框59，藉由保持部58b保持多孔金屬56。以載置在多孔金屬56的內部空間57中的狀態運送樹脂材料44。Next, as shown in part (c) of FIG. 12, using the material transport mechanism 58, the material storage frame 59, the porous metal 56, and the resin material 44 are lifted together from the X-Y table 36. The material accommodating frame 59 is held by the holding portion 58 a of the material transport mechanism 58, and the porous metal 56 is held by the holding portion 58 b. The resin material 44 is carried in a state of being placed in the internal space 57 of the porous metal 56.
接著，如第13圖的(a)部分所示，使用材料運送機構58來使材料收容框59移動至下模45的規定位置上並停止。之後，使材料收容框59下降並載置在下模45的型面上。在該階段，多孔金屬56和樹脂材料44尚未供給到型腔48內。Next, as shown in part (a) of FIG. 13, the material storage frame 59 is moved to a predetermined position of the lower mold 45 using the material transport mechanism 58 and stopped. After that, the material storage frame 59 is lowered and placed on the molding surface of the lower mold 45. At this stage, the porous metal 56 and the resin material 44 have not been supplied into the cavity 48.
接著，在將材料收容框59載置在下模45的型面上之後，停止材料運送機構58的保持部58b對多孔金屬56的保持。由此，多孔金屬56和樹脂材料44被一併供給到型腔48內。以載置在多孔金屬56的內部空間57中的狀態供給樹脂材料44。多孔金屬56具有比型腔48稍小的俯視形狀。因此，供給到型腔48內的多孔金屬56在之後實質上保持相同的位置。Next, after the material storage frame 59 is placed on the profile of the lower mold 45, the holding of the porous metal 56 by the holding portion 58b of the material transport mechanism 58 is stopped. Thereby, the porous metal 56 and the resin material 44 are supplied into the cavity 48 together. The resin material 44 is supplied in a state of being placed in the internal space 57 of the porous metal 56. The porous metal 56 has a plan view slightly smaller than the cavity 48. Therefore, the porous metal 56 supplied into the cavity 48 remains substantially the same position thereafter.
接著，如第13圖的(b)部分所示，在將多孔金屬56和樹脂材料44一併供給到型腔48中之後，使用材料運送機構58從下模45抬起材料收容框59。藉由材料運送機構58的保持部58a來僅保持材料收容框59。由此，能夠將多孔金屬56和樹脂材料44從材料收容框59穩定地供給到型腔48中。Next, as shown in part (b) of FIG. 13, after the porous metal 56 and the resin material 44 are supplied to the cavity 48 together, the material storage frame 59 is lifted from the lower mold 45 using the material transport mechanism 58. Only the material storage frame 59 is held by the holding portion 58 a of the material conveyance mechanism 58. Accordingly, the porous metal 56 and the resin material 44 can be stably supplied from the material storage frame 59 into the cavity 48.
接著，如第14圖的(a)部分所示，在成型模開模的狀態下，使用基板運送機構（參照第16圖）將基板51運送至上模49的規定位置並固定在上模49中。如第13圖所示，藉由材料運送機構59將樹脂材料44和多孔金屬56一併供給到設置於下模45的型腔48中。藉由使用加熱器（未圖示）來加熱供給到下模45中的樹脂材料44以使其熔化，從而生成熔化樹脂53。在本實施例中，在多孔金屬56的內部空間57內生成熔化樹脂53。Next, as shown in part (a) of FIG. 14, the substrate 51 is transported to a predetermined position of the upper mold 49 using a substrate transport mechanism (see FIG. 16) while the mold is opened, and fixed to the upper mold 49. . As shown in FIG. 13, the resin material 44 and the porous metal 56 are supplied to the cavity 48 provided in the lower mold 45 together by the material transport mechanism 59. The resin material 44 supplied to the lower mold 45 is heated by using a heater (not shown) to melt it, thereby generating a molten resin 53. In the present embodiment, a molten resin 53 is generated in the internal space 57 of the porous metal 56.
接著，使用合模機構（參照第16圖）來對上模49和下模45進行合模。藉由合模，使安裝在基板51上的晶片部件50浸漬到在多孔金屬56的內部空間57內生成的熔化樹脂53中。藉由在多孔金屬56的內部空間57內生成的熔化樹脂53中浸漬晶片部件50，熔化樹脂53的液面（圖中為上表面）從多孔金屬56的內部空間57稍微上升至型腔48內。藉由目前為止的製程，在型腔48內多孔金屬56和晶片部件50浸漬到熔化樹脂53中。Next, the upper mold 49 and the lower mold 45 are clamped using a mold clamping mechanism (see FIG. 16). The wafer member 50 mounted on the substrate 51 is dipped into the molten resin 53 generated in the internal space 57 of the porous metal 56 by the mold clamping. By immersing the wafer member 50 in the molten resin 53 generated in the internal space 57 of the porous metal 56, the liquid level (upper surface in the figure) of the molten resin 53 rises slightly from the internal space 57 of the porous metal 56 into the cavity 48. . Through the processes so far, the porous metal 56 and the wafer member 50 are immersed in the molten resin 53 in the cavity 48.
接著，如第14圖的(b)部分所示，使用驅動機構（未圖示）來使底面部件47上升規定的距離。藉由使底面部件47上升，對型腔48內的熔化樹脂53進行加壓。利用底面部件47來加壓熔化樹脂53的同時，使多孔金屬56的外側（圖中為上側）底面與設置於基板51的接地電極4a（參照第3圖）接觸。Next, as shown in part (b) of FIG. 14, the bottom surface member 47 is raised by a predetermined distance using a driving mechanism (not shown). By raising the bottom surface member 47, the molten resin 53 in the cavity 48 is pressurized. The bottom surface member 47 is used to press-melt the resin 53 while bringing the bottom surface of the outer side (upper side in the figure) of the porous metal 56 into contact with the ground electrode 4 a (see FIG. 3) provided on the substrate 51.
在本實施例中，使用具有纖維狀結構的多孔金屬56。因此，由多個纖維在多孔金屬56的表面上形成微小的凹凸。在多孔金屬56的外側底面，多個纖維的端部和彎曲部作為突起來存在。這些多個纖維的突起推開熔化樹脂53並與接地電極4a接觸。因此，在多孔金屬56浸漬到熔化樹脂53中的狀態下進行樹脂封裝時，能夠連接多孔金屬56的外側底面和接地電極4a。由於能夠將多孔金屬56電接地，因此能夠將多孔金屬56用作電磁遮罩板。In this embodiment, a porous metal 56 having a fibrous structure is used. Therefore, minute irregularities are formed on the surface of the porous metal 56 by a plurality of fibers. On the outer bottom surface of the porous metal 56, end portions and bent portions of the plurality of fibers exist as protrusions. These multiple fiber protrusions push away the molten resin 53 and come into contact with the ground electrode 4a. Therefore, when resin sealing is performed while the porous metal 56 is immersed in the molten resin 53, the outer bottom surface of the porous metal 56 and the ground electrode 4 a can be connected. Since the porous metal 56 can be electrically grounded, the porous metal 56 can be used as an electromagnetic shielding plate.
接著，在多孔金屬56的外側底面和接地電極4a接觸的狀態下，藉由繼續加熱熔化樹脂53而形成硬化樹脂54。在保持多孔金屬56的外側底面和接地電極4a接觸的狀態下，利用硬化樹脂54來對晶片部件50和多孔金屬56進行樹脂封裝。在該過程中，多孔金屬56以多孔金屬56的頂面和側面露出的狀態被固定在硬化樹脂54上。Next, in a state where the outer bottom surface of the porous metal 56 is in contact with the ground electrode 4a, the resin 53 is continuously heated to melt the resin 53 to form a hardened resin 54. With the outer bottom surface of the porous metal 56 in contact with the ground electrode 4 a, the wafer member 50 and the porous metal 56 are resin-encapsulated with the hardened resin 54. In this process, the porous metal 56 is fixed to the hardened resin 54 in a state where the top and side surfaces of the porous metal 56 are exposed.
接著，如第14圖的(c)部分所示，在結束樹脂封裝之後，使用合模機構（參照第16圖）來使下模45下降。藉由該操作，對上模49和下模45進行開模。在開模之後，從上模49取出固定有多孔金屬56的成型品55。在本實施例中，樹脂封裝後的成型品55相當於第3圖所示的電子部件22。Next, as shown in part (c) of FIG. 14, after the resin encapsulation is completed, the lower mold 45 is lowered using a mold clamping mechanism (see FIG. 16). With this operation, the upper die 49 and the lower die 45 are opened. After the mold is opened, the molded product 55 to which the porous metal 56 is fixed is taken out from the upper mold 49. In the present embodiment, the resin-molded molded product 55 corresponds to the electronic component 22 shown in FIG. 3.
根據本實施例，使用具有蓋狀形狀的多孔金屬56來作為電磁遮罩板。在多孔金屬56所具有的內部空間57中載置有樹脂材料44的狀態下，能夠向型腔48供給樹脂材料44和多孔金屬56。因此，在不使用離型膜的情況下，能運送樹脂材料44和多孔金屬56。由此，能夠簡化樹脂封裝裝置的結構。此外，由於不使用離型膜，因此能抑制製造成本和材料成本。According to the present embodiment, a porous metal 56 having a lid-like shape is used as the electromagnetic shielding plate. The resin material 44 and the porous metal 56 can be supplied to the cavity 48 in a state where the resin material 44 is placed in the internal space 57 of the porous metal 56. Therefore, the resin material 44 and the porous metal 56 can be transported without using a release film. Thereby, the structure of a resin sealing device can be simplified. In addition, since a release film is not used, manufacturing costs and material costs can be suppressed.
根據本實施例，使用具有蓋狀形狀的多孔金屬56。由於使用具有纖維狀構造的多孔金屬56，因此在多孔金屬56的底面上存在多個纖維突起。在多孔金屬56浸漬到熔化樹脂53中的狀態下進行樹脂封裝時，能夠藉由這些纖維突起來連接多孔金屬56的外側底面和設置於基板51的接地電極4a。因此，具有蓋狀形狀的多孔金屬56作為散熱板和電磁遮罩板來發揮功能。According to the present embodiment, a porous metal 56 having a lid-like shape is used. Since the porous metal 56 having a fibrous structure is used, a plurality of fiber protrusions are present on the bottom surface of the porous metal 56. When resin sealing is performed while the porous metal 56 is immersed in the molten resin 53, the outer bottom surface of the porous metal 56 and the ground electrode 4 a provided on the substrate 51 can be connected by these fiber protrusions. Therefore, the porous metal 56 having a lid-like shape functions as a heat radiation plate and an electromagnetic shielding plate.
在本實施例中，對在多孔金屬56與晶片部件50之間形成硬化樹脂54的情況進行了說明。不限於此，可以在使多孔金屬56的內底面和晶片部件50的副面直接接觸的狀態、以及使多孔金屬56的外側底面和基板51的接地電極4a直接接觸的狀態下進行樹脂封裝。在該情況下，由於為第4圖的(a)部分所示的電子部件26的結構，因此多孔金屬56能進一步發揮作為散熱板和電磁遮罩板的功能。In this embodiment, the case where the hardened resin 54 is formed between the porous metal 56 and the wafer member 50 has been described. Not limited to this, resin sealing may be performed in a state where the inner bottom surface of the porous metal 56 and the sub-surface of the wafer member 50 are in direct contact, and a state where the outer bottom surface of the porous metal 56 is in direct contact with the ground electrode 4 a of the substrate 51. In this case, because of the structure of the electronic component 26 shown in part (a) of FIG. 4, the porous metal 56 can further function as a heat sink and an electromagnetic shield plate.
在向多孔金屬56上方供給樹脂材料44之前，也可以在設置於下模45的型腔48的內底面上配置多孔金屬56。在該情況下，為了使多孔金屬56對準型腔48，可採用以下結構。在型腔48上設置突起（銷等），在多孔金屬56設置凹處、開口（孔）等。也可以在型腔48的內底面上設置凹處，在多孔金屬56上設置突起。還可以使多孔金屬56的俯視形狀比型腔48的內底面的俯視形狀稍小。這些突起與凹處等的組合以及俯視形狀之間的關係構成對準單元。使多孔金屬56對準型腔48，並在型腔48的內底面上配置多孔金屬56。之後，向多孔金屬56上方供給樹脂材料44。Before the resin material 44 is supplied above the porous metal 56, the porous metal 56 may be disposed on the inner bottom surface of the cavity 48 provided in the lower mold 45. In this case, in order to align the porous metal 56 with the cavity 48, the following structure can be adopted. Protrusions (pins, etc.) are provided in the cavity 48, and recesses, openings (holes), and the like are provided in the porous metal 56. A recess may be provided on the inner bottom surface of the cavity 48, and a protrusion may be provided on the porous metal 56. The planar shape of the porous metal 56 may be slightly smaller than the planar shape of the inner bottom surface of the cavity 48. The combination of these protrusions, recesses, and the like and the relationship between the shapes in plan view constitute an alignment unit. The porous metal 56 is aligned with the cavity 48, and the porous metal 56 is arranged on the inner bottom surface of the cavity 48. Thereafter, the resin material 44 is supplied above the porous metal 56.
（實施例9）(Example 9)
參照第15圖，對本發明的電子部件的製造方法的實施例進行說明。如第15圖所示，首先，準備形成有多個區域的基板51，其中，在該多個區域分別配置有一個（也可以是多個）晶片部件50。一個區域相當於一個電子部件。準備形成有與各區域對應的凹部（內部空間）57a的多孔金屬56a。凹部57a例如藉由衝壓加工而形成。An embodiment of a method for manufacturing an electronic component according to the present invention will be described with reference to FIG. 15. As shown in FIG. 15, first, a substrate 51 having a plurality of regions is prepared, and one (or a plurality of) wafer components 50 are arranged in the plurality of regions, respectively. One area is equivalent to one electronic component. A porous metal 56a having a recessed portion (internal space) 57a corresponding to each region is prepared. The recessed portion 57a is formed by, for example, press working.
接著，使用導電性黏合劑（未圖示）等，將用於劃分多孔金屬56a中的各凹部57a的壁部的端面（圖中為上表面）固定在形成於基板51的接地電極4a上。由此，多孔金屬56a的壁部中的端面（圖中為上表面）與接地電極4a連接。Next, an end surface (upper surface in the figure) for defining a wall portion of each recessed portion 57 a in the porous metal 56 a is fixed to the ground electrode 4 a formed on the substrate 51 using a conductive adhesive (not shown) or the like. Thereby, the end surface (upper surface in the figure) of the wall portion of the porous metal 56a is connected to the ground electrode 4a.
接著，向凹部57a填充流動性樹脂53。在向凹部57a填充流動性樹脂53的製程中，也可以使用壓縮成型和傳遞成型中的任一種方式。在任何方式中，均經由多孔金屬56a所具有的多個連通孔，向凹部57a填充流動性樹脂53。在壓縮成型的情況下，還可以將用於向多孔金屬56a的凹部57a填充流動性樹脂53的適當的開口設置在多孔金屬56a的頂面（圖中為下表面）或壁部上。在傳遞成型的情況下，還可以將用於向多孔金屬56a的凹部57a填充流動性樹脂53的適當的開口設置在多孔金屬56a的頂面或壁部上。Next, the recessed portion 57 a is filled with the fluid resin 53. In the process of filling the recessed portion 57 a with the fluid resin 53, either of compression molding and transfer molding may be used. In any method, the recessed portion 57a is filled with the fluid resin 53 through the plurality of communication holes included in the porous metal 56a. In the case of compression molding, an appropriate opening for filling the recessed portion 57 a of the porous metal 56 a with the fluid resin 53 may be provided on the top surface (lower surface in the figure) or the wall portion of the porous metal 56 a. In the case of transfer molding, an appropriate opening for filling the recessed portion 57 a of the porous metal 56 a with the fluid resin 53 may be provided on the top surface or the wall portion of the porous metal 56 a.
接著，藉由使填充後的流動性樹脂53硬化，形成由硬化樹脂54構成的封裝樹脂。由此，完成相當於成型品55的封裝後基板。Next, the filled fluid resin 53 is cured to form an encapsulating resin composed of the cured resin 54. Thereby, a post-package substrate equivalent to the molded product 55 is completed.
接著，在取出成型品55之後，以各區域為單位對成型品55進行單片化。由此，完成作為產品的電子部件。在經單片化的各電子部件中，第一，俯視時完全覆蓋晶片部件的經單片化的多孔金屬被緊貼設置在晶片部件的頂面（圖中為下表面）上。第二，俯視時經單片化的多孔金屬的壁部完全包圍晶片部件。第三，經單片化的多孔金屬的壁部中的端面與形成在經單片化的基板上的接地電極4a連接。經單片化的多孔金屬作為散熱板和電磁遮罩板來發揮功能。因此，能得到具有優異的散熱特性和優異的電磁遮罩特性的電子部件。也可以有成型品55相當於一個電子模組的方式。Next, after the molded product 55 is taken out, the molded product 55 is singulated in units of each region. Thereby, the electronic component as a product is completed. Among the singulated electronic components, first, the singulated porous metal that completely covers the wafer component in plan view is closely attached to the top surface (lower surface in the figure) of the wafer component. Secondly, the wall portion of the singulated porous metal completely surrounds the wafer member in plan view. Third, the end surface in the wall portion of the singulated porous metal is connected to the ground electrode 4a formed on the singulated substrate. The singulated porous metal functions as a heat sink and an electromagnetic shield plate. Therefore, an electronic component having excellent heat dissipation characteristics and excellent electromagnetic shielding characteristics can be obtained. There may be a method in which the molded product 55 corresponds to one electronic module.
在本實施例中，由一體的多孔金屬56a構成平板狀的部分和分隔各區域的壁狀的部分。代替此，也可以由不同的部件構成平板狀的部分和壁狀的部分。在該情況下，平板狀的部分和壁狀的部分中的一個部分為多孔金屬，另一個部分為其它導電性部件即可。還可以是平板狀的部分和壁狀的部分這兩部分為多孔金屬。In the present embodiment, a flat plate-shaped portion and a wall-shaped portion partitioning each region are formed by the integral porous metal 56a. Instead of this, the plate-shaped portion and the wall-shaped portion may be configured by different members. In this case, one of the flat portion and the wall portion may be a porous metal, and the other portion may be another conductive member. Both the flat plate-shaped portion and the wall-shaped portion may be porous metal.
（實施例10）(Example 10)
參照第16圖，對本發明的樹脂封裝裝置的實施例進行說明。第16圖所示的樹脂封裝裝置61為利用例如實施例6～9中所使用的壓縮成型法（Compression molding method）的樹脂封裝裝置。樹脂封裝裝置61具備分別作為結構要素的基板供給收納模組62、三個成型模組63A、63B、63C和材料供給模組64。作為結構要素的基板供給收納模組62、成型模組63A、63B、63C和材料供給模組64相對於各個其它結構要素能夠彼此裝卸，並且能夠更換。An embodiment of the resin sealing device of the present invention will be described with reference to FIG. 16. The resin encapsulation device 61 shown in FIG. 16 is a resin encapsulation device using, for example, a compression molding method used in Examples 6 to 9. The resin encapsulation device 61 includes a substrate supply storage module 62, three molding modules 63A, 63B, 63C, and a material supply module 64 as constituent elements, respectively. The substrate supply storage module 62, the molding modules 63A, 63B, 63C, and the material supply module 64 which are structural elements can be attached to and detached from each other and can be replaced.
在基板供給收納模組62中設置有：封裝前基板供給部66，供給封裝前基板65；封裝後基板收納部68，收納相當於成型品的封裝後基板67；基板載置部69，轉交封裝前基板65和封裝後基板67；和基板運送機構70，運送封裝前基板65和封裝後基板67。基板載置部69在基板供給收納模組62內沿Y方向移動。基板運送機構70在基板供給收納模組62及各個成型模組63A、63B、63C內沿X方向、Y方向和Z方向移動。規定位置S1為基板運送機構70在未工作狀態下待機的位置。The substrate supply storage module 62 is provided with a pre-package substrate supply unit 66 that supplies a pre-package substrate 65; a post-package substrate storage unit 68 that stores a post-package substrate 67 equivalent to a molded product; and a substrate mounting unit 69 that transfers the package The front substrate 65 and the post-package substrate 67; and the substrate transport mechanism 70, which transports the pre-package substrate 65 and the post-package substrate 67. The substrate mounting portion 69 moves in the Y direction in the substrate supply storage module 62. The substrate transfer mechanism 70 moves in the X direction, the Y direction, and the Z direction within the substrate supply storage module 62 and each of the molding modules 63A, 63B, and 63C. The predetermined position S1 is a position where the substrate conveyance mechanism 70 stands by in the non-operating state.
在各成型模組63A、63B、63C中設置有能夠升降的下模45和與下模45相對置配置的上模49（參照第8圖）。各成型模組63A、63B、63C具備對上模49和下模45進行合模及開模的合模機構71（用雙點劃線表示的圓形部分）。離型膜37被配置在下模45中。待供給由多孔金屬38構成的散熱板和樹脂材料44的型腔48被設置於下模45（參照第7圖）。Each of the molding modules 63A, 63B, and 63C is provided with a lower mold 45 capable of being raised and lowered and an upper mold 49 disposed opposite to the lower mold 45 (see FIG. 8). Each of the molding modules 63A, 63B, and 63C includes a mold clamping mechanism 71 (a circular portion indicated by a two-dot chain line) for clamping and opening the upper mold 49 and the lower mold 45. The release film 37 is arranged in the lower mold 45. A cavity 48 to be supplied with a heat sink made of porous metal 38 and a cavity 48 of a resin material 44 is provided in the lower mold 45 (see FIG. 7).
在材料供給模組64中設置有：X-Y工作臺36；離型膜供給機構72，將離型膜37（參照第6圖）供給到X-Y工作臺36上；散熱板供給機構73，供給由多孔金屬38構成的散熱板（參照第6圖）；樹脂材料投入機構74，向材料收容框40投入樹脂材料44（參照第6圖）；和材料運送機構39（參照第6圖），運送材料收容框40。X-Y工作臺36在材料供給模組64內沿X方向和Y方向移動。材料運送機構39在材料供給模組64及各個成型模組63A、63B、63C內沿X方向、Y方向和Z方向移動。規定位置M1為材料運送機構39在未工作狀態下待機的位置。The material supply module 64 is provided with: an XY table 36; a release film supply mechanism 72 that supplies a release film 37 (see FIG. 6) to the XY table 36; a heat sink supply mechanism 73 that supplies A heat sink plate made of metal 38 (see FIG. 6); a resin material input mechanism 74 that inserts a resin material 44 into a material storage frame 40 (refer to FIG. 6); and a material transport mechanism 39 (refer to FIG. 6) that transports material storage Box 40. The X-Y table 36 moves in the X direction and the Y direction within the material supply module 64. The material transport mechanism 39 moves in the X direction, the Y direction, and the Z direction within the material supply module 64 and each of the molding modules 63A, 63B, and 63C. The predetermined position M1 is a position where the material transport mechanism 39 is in a standby state in the non-operating state.
參照第16圖，對使用樹脂封裝裝置61來進行樹脂封裝的操作進行說明。首先，在基板供給收納模組62中，由封裝前基板供給部66向基板載置部69送出封裝前基板65。接著，基板運送機構70從規定位置S1沿-Y方向移動並從基板載置部69接收封裝前基板65。基板運送機構70返回至規定位置S1。接著，例如，基板運送機構70沿+X方向移動至成型模組63B的規定位置P1。接著，在成型模組63B中，基板運送機構70沿-Y方向移動並停止在下模45上的規定位置C1。接著，基板運送機構70上升以將封裝前基板65固定在上模49（參照第8圖）上。基板運送機構70返回至基板供給收納模組62的規定位置S1。Referring to FIG. 16, an operation of resin sealing using the resin sealing device 61 will be described. First, in the substrate supply storage module 62, the pre-package substrate 65 is sent from the pre-package substrate supply unit 66 to the substrate mounting portion 69. Next, the substrate transfer mechanism 70 moves from the predetermined position S1 in the −Y direction, and receives the pre-package substrate 65 from the substrate mounting portion 69. The substrate transfer mechanism 70 returns to the predetermined position S1. Next, for example, the substrate transfer mechanism 70 moves to a predetermined position P1 of the molding module 63B in the + X direction. Next, in the molding module 63B, the substrate transfer mechanism 70 moves in the −Y direction and stops at a predetermined position C1 on the lower mold 45. Next, the substrate transfer mechanism 70 is raised to fix the pre-package substrate 65 to the upper mold 49 (see FIG. 8). The substrate transfer mechanism 70 returns to a predetermined position S1 of the substrate supply storage module 62.
接著，在材料供給模組64中，將由離型膜供給機構72供給到X-Y工作臺36（參照第6圖）上的離型膜37切割成規定大小。接著，由散熱板供給機構73運送散熱板38，並將該散熱板38載置在覆蓋X-Y工作臺36的離型膜37上。接著，在保持材料收容框40的狀態下，材料運送機構39從規定位置M1沿－Y方向移動。在X-Y工作臺36中，以使載置在離型膜37上的多孔金屬38被配置在材料收容框40的貫通孔41（參照第6圖）中的方式，將材料收容框40載置在離型膜37上。材料運送機構39返回至規定位置M1。Next, in the material supply module 64, the release film 37 supplied to the X-Y table 36 (refer to FIG. 6) by the release film supply mechanism 72 is cut into a predetermined size. Next, the heat radiating plate 38 is transported by the heat radiating plate supply mechanism 73, and the heat radiating plate 38 is placed on the release film 37 covering the X-Y table 36. Next, the material transport mechanism 39 is moved from the predetermined position M1 in the −Y direction while the material storage frame 40 is held. In the XY table 36, the material storage frame 40 is placed on the material storage frame 40 so that the porous metal 38 placed on the release film 37 is disposed in the through hole 41 (see FIG. 6) of the material storage frame 40. On the release film 37. The material transport mechanism 39 returns to the predetermined position M1.
接著，藉由使X-Y工作臺36移動，來使材料收容框40停止在樹脂材料投入機構74下方的規定位置上。接著，藉由使X-Y工作臺36沿X方向和Y方向移動，從樹脂材料投入機構74向材料收容框40供給規定量的樹脂材料44。X-Y工作臺36返回至原來的位置。在該階段，材料收容框40、離型膜37、多孔金屬38和樹脂材料44被一體化（參照第6圖）。Next, the X-Y table 36 is moved to stop the material storage frame 40 at a predetermined position below the resin material charging mechanism 74. Next, by moving the X-Y table 36 in the X direction and the Y direction, a predetermined amount of resin material 44 is supplied from the resin material input mechanism 74 to the material storage frame 40. The X-Y table 36 returns to its original position. At this stage, the material storage frame 40, the release film 37, the porous metal 38, and the resin material 44 are integrated (see FIG. 6).
接著，藉由使材料運送機構39從規定位置M1沿-Y方向移動，來接收載置在X-Y工作臺36上的材料收容框40。材料運送機構39返回至規定位置M1。材料運送機構39沿-X方向移動至成型模組63B的規定位置P1。Next, the material transport mechanism 39 is moved from the predetermined position M1 in the −Y direction to receive the material storage frame 40 placed on the X-Y table 36. The material transport mechanism 39 returns to the predetermined position M1. The material transport mechanism 39 moves to a predetermined position P1 of the molding module 63B in the -X direction.
接著，在成型模組63B中，材料運送機構39沿-Y方向移動並停止在下模45上的規定位置C1。藉由使材料運送機構39下降，將樹脂材料44、多孔金屬38和離型膜37供給到型腔48中。材料運送機構39返回至規定位置M1。Next, in the molding module 63B, the material transport mechanism 39 moves in the −Y direction and stops at a predetermined position C1 on the lower mold 45. By lowering the material transport mechanism 39, the resin material 44, the porous metal 38, and the release film 37 are supplied into the cavity 48. The material transport mechanism 39 returns to the predetermined position M1.
接著，在成型模組63B中，藉由合模機構71使下模45上升，來對上模49（參照第8圖）和下模45進行合模。在經過規定時間之後，對上模49和下模45進行開模。Next, in the molding module 63B, the lower mold 45 is raised by the mold clamping mechanism 71 to close the upper mold 49 (see FIG. 8) and the lower mold 45. After a predetermined time has elapsed, the upper mold 49 and the lower mold 45 are opened.
接著，藉由使基板運送機構70從基板供給收納模組62的規定位置S1移動至下模45上的規定位置C1，來接收樹脂封裝有晶片部件50和多孔金屬38的封裝後基板67（在第8圖中相當於成型品55）。基板運送機構70移動，並向基板載置部69轉交封裝後基板67。將封裝後基板67從基板載置部69收納在封裝後基板收納部68中。如此，完成樹脂封裝。Next, the substrate transfer mechanism 70 is moved from a predetermined position S1 of the substrate supply storage module 62 to a predetermined position C1 on the lower mold 45 to receive the resin-encapsulated substrate 67 (within the wafer component 50 and the porous metal 38) FIG. 8 corresponds to the molded product 55). The substrate conveyance mechanism 70 moves and transfers the packaged substrate 67 to the substrate placing portion 69. The packaged substrate 67 is stored in the packaged substrate storage portion 68 from the substrate mounting portion 69. In this way, resin packaging is completed.
在本實施例中，在基板供給收納模組62與材料供給模組64之間，沿X方向排列安裝有三個成型模組63A、63B、63C。也可以將基板供給收納模組62和材料供給模組64設為一個模組，並且在該模組上沿X方向排列安裝一個成型模組63A。由此，在製造階段以及設置于客戶工廠之後的階段這兩個階段中，能增減成型模組63A、63B、…。因此，能夠與生產方式或生產量相應地優化樹脂封裝裝置61的結構，從而能實現生產率的提高。In this embodiment, three molding modules 63A, 63B, and 63C are arranged in a row between the substrate supply storage module 62 and the material supply module 64 in the X direction. The substrate supply storage module 62 and the material supply module 64 may be set as a single module, and a molding module 63A may be arranged and arranged in the X direction on the module. This makes it possible to increase or decrease the molding modules 63A, 63B,... In both the manufacturing stage and the stage subsequent to the installation at the customer's factory. Therefore, the structure of the resin sealing device 61 can be optimized according to the production method or the production amount, and productivity can be improved.
各實施例中所使用的多孔金屬包括網眼細小的鐵絲網。作為各實施例中所使用的多孔金屬，較佳與用作金屬線制鋼絲清潔球（wire scourer）的材料的鐵絲網相同種類的鐵絲網中的網眼細小的鐵絲網。The porous metal used in each Example includes a fine-mesh wire mesh. As the porous metal used in each of the examples, a wire mesh with a fine mesh in the wire mesh of the same kind as the wire mesh used as a material for a wire scourer made of a metal wire is preferred.
也可以使用以下材料來代替多孔金屬。這些材料具有導電性和可撓性等可變形性。第一種材料為具有波形狀（包括曲折狀）的剖面形狀的金屬板（包括金屬箔）。第二種材料為導電性纖維。第三種材料為海綿狀等的導電性樹脂。能夠將包括多孔金屬的上述材料作為電子部件的散熱板、電磁遮罩板或者散熱板和電磁遮罩這兩個板的材料來使用。也可以組合這些材料來使用。由於能夠藉由這些材料來減低樹脂封裝時施加到晶片部件的成型壓力，因此能防止晶片部件的破損。The following materials can also be used in place of the porous metal. These materials have deformability such as conductivity and flexibility. The first material is a metal plate (including a metal foil) having a cross-sectional shape including a wave shape (including a zigzag shape). The second material is conductive fibers. The third material is a conductive resin such as a sponge. The above-mentioned material including a porous metal can be used as a material of a heat sink plate, an electromagnetic shield plate, or both of a heat sink plate and an electromagnetic shield of an electronic component. These materials may be used in combination. Since these materials can reduce the molding pressure applied to the wafer component during the resin sealing, the wafer component can be prevented from being damaged.
作為各實施例中所使用的樹脂成型的方式，可使用傳遞成型或射出成型。在這種情況下，在對成型模進行合模的製程與維持成型模合模的狀態的製程之間，具備經由成型模所具有的樹脂流路向型腔供給流動性樹脂的製程。供給到型腔中的流動性樹脂相當於樹脂材料。As a method of resin molding used in each embodiment, transfer molding or injection molding can be used. In this case, between the process of clamping the molding die and the process of maintaining the mold clamping state, a process of supplying a fluid resin to the cavity through a resin flow path included in the molding die is provided. The fluid resin supplied into the cavity corresponds to a resin material.
作為各實施例中所使用的樹脂成型的方式，可使用壓縮成型。在這種情況下，在對成型模進行合模的製程之前，具備向型腔供給樹脂材料的製程。樹脂材料在常溫下也可以為固態。在該情況下，藉由加熱供給到型腔中的樹脂材料使其熔化而形成熔化樹脂（流動性樹脂），並使該流動性樹脂硬化。樹脂材料在常溫下還可以為液態（具有流動性的狀態）。在該情況下，使供給到型腔中的液狀樹脂硬化。As a method of resin molding used in each example, compression molding can be used. In this case, a process of supplying a resin material to the cavity is provided before the process of clamping the molding die. The resin material may be solid at normal temperature. In this case, the resin material supplied into the cavity is heated and melted to form a molten resin (flowable resin), and the flowable resin is hardened. The resin material may be liquid (a fluid state) at normal temperature. In this case, the liquid resin supplied into the cavity is hardened.
在各實施例中，對在下模側設置型腔並在型腔側配置多孔金屬的例進行了說明。在該情況下，待配置多孔金屬的配置區域被設置在下模側的型腔的內底面上。不限於此，也可以在上模側設置型腔，在上模側的型腔的內底面（型腔內部中的上表面）上設置配置區域。在該情況下，作為供給到型腔中的樹脂材料，較佳使用常溫下為膠狀或糊狀的樹脂材料。還可以向被配置在下模的型面中的基板上方供給常溫下為膠狀或糊狀的樹脂材料。In each embodiment, an example in which a cavity is provided on the lower die side and a porous metal is disposed on the cavity side has been described. In this case, the arrangement area of the porous metal to be arranged is provided on the inner bottom surface of the cavity on the lower mold side. Not limited to this, a cavity may be provided on the upper mold side, and an arrangement area may be provided on the inner bottom surface (upper surface in the cavity interior) of the cavity on the upper mold side. In this case, as the resin material supplied into the cavity, a resin material that is gelatinous or pasty at room temperature is preferably used. A resin material that is gelatinous or pasty at room temperature may be supplied above the substrate disposed in the profile of the lower mold.
在各實施例中，對半導體晶片進行樹脂封裝時所使用的樹脂封裝裝置及樹脂封裝方法進行了說明。樹脂封裝的物件也可以是半導體晶片、無源元件、感測器、濾波器等晶片部件、微電子機械系統（MEMS：Micro Electro Mechanical Systems）等器件。當利用硬化樹脂對安裝在引線框、印刷基板、陶瓷基板、膜基底基板、金屬基底基板等基板上的一個或多個晶片部件進行樹脂封裝時，可應用本發明。因此，當製造用作控制電子模組等的多晶片封裝件、多晶片模組、混合動力IC等時，也可以應用本發明。In each embodiment, the resin sealing device and the resin sealing method used when resin-sealing a semiconductor wafer are demonstrated. Resin-encapsulated objects can also be semiconductor components such as semiconductor wafers, passive components, sensors, and filters, and devices such as microelectromechanical systems (MEMS: Micro Electro Mechanical Systems). The present invention can be applied when one or more wafer components mounted on a substrate such as a lead frame, a printed substrate, a ceramic substrate, a film-based substrate, or a metal-based substrate are resin-encapsulated with a hardened resin. Therefore, the present invention can also be applied when manufacturing a multi-chip package, a multi-chip module, a hybrid IC, or the like used as a control electronic module or the like.
本發明不限定於上述的各實施例，在不脫離本發明的主旨的範圍內，可按照需要，任意且適當組合而進行變更，或選擇性地採用。The present invention is not limited to the above-mentioned embodiments, and can be changed in an arbitrary and appropriate combination as required, or can be selectively adopted within a range not departing from the gist of the present invention.
1、16、22、26、29、32‧‧‧電子部件
2、17、23、27、30、33‧‧‧基板
3、18、24、28、31、34‧‧‧半導體晶片（晶片部件）
4‧‧‧佈線
4a‧‧‧接地電極
5、19‧‧‧基板電極
6‧‧‧通孔佈線
7‧‧‧連接盤
7a‧‧‧接地用連接盤
8、9‧‧‧阻焊膜
10‧‧‧焊錫球（外部電極）
10a‧‧‧接地用的焊錫球（外部電極）
11‧‧‧焊盤電極（晶片電極）
12‧‧‧接合線（連接部件）
13‧‧‧多孔金屬（第一部件、第二部件）
15‧‧‧多孔金屬（第二部件）
14‧‧‧封裝樹脂
20‧‧‧凸塊（連接部件）
21、21a、25a、38、56、56a‧‧‧多孔金屬（第一部件）
21b‧‧‧多孔金屬（第二部件）
21c‧‧‧金屬板（第一部件）
25‧‧‧多孔金屬（第二部件、第一部件）
25b‧‧‧金屬板（第二部件）
35‧‧‧下填料
36‧‧‧X-Y工作臺
37‧‧‧離型膜
39、58‧‧‧材料運送機構（樹脂供給機構）
39a、39b、58a、58b‧‧‧保持部
40、59‧‧‧材料收容框
41‧‧‧貫通孔
42、60‧‧‧周緣部
43‧‧‧吸附槽
44‧‧‧樹脂材料
45‧‧‧下模（第一模、第二模）
46‧‧‧周面部件
47‧‧‧底面部件
48‧‧‧型腔
49‧‧‧上模（第二模、第一模）
50‧‧‧晶片部件
51‧‧‧基板（封裝前基板）
52‧‧‧凸塊（連接部件）
53‧‧‧熔化樹脂（流動性樹脂）
54‧‧‧硬化樹脂（封裝樹脂）
55‧‧‧成型品（電子部件）
57、57a‧‧‧凹部（內部空間）
61‧‧‧樹脂封裝裝置（製造裝置）
62‧‧‧基板供給收納模組
63A、63B、63C‧‧‧成型模組
64‧‧‧材料供給模組
65‧‧‧封裝前基板（基板）
66‧‧‧封裝前基板供給部
67‧‧‧封裝後基板
68‧‧‧封裝後基板收容部
69‧‧‧基板載置部
70‧‧‧基板運送機構（基板供給機構）
71‧‧‧合模機構
72‧‧‧離型膜供給機構
73‧‧‧散熱板供給機構
74‧‧‧樹脂材料投入機構
S1、P1、C1、M1‧‧‧規定位置1, 16, 22, 26, 29, 32‧‧‧ electronic components
2, 17, 23, 27, 30, 33‧‧‧ substrate
3, 18, 24, 28, 31, 34‧‧‧ semiconductor wafers (wafer components)
4‧‧‧ wiring
4a‧‧‧ ground electrode
5, 19‧‧‧ substrate electrode
6‧‧‧through hole wiring
7‧‧‧Connecting plate
7a‧‧‧ grounding connection plate
8, 9‧‧‧ solder mask
10‧‧‧Solder ball (external electrode)
10a‧‧‧ Ground solder ball (external electrode)
11‧‧‧ pad electrode (chip electrode)
12‧‧‧ bonding wire (connecting parts)
13‧‧‧ porous metal (first part, second part)
15‧‧‧ Porous metal (second component)
14‧‧‧Encapsulating resin
20‧‧‧ bump (connecting part)
21, 21a, 25a, 38, 56, 56a ‧‧‧ porous metal (first component)
21b‧‧‧Porous metal (second component)
21c‧‧‧Metal plate (first part)
25‧‧‧ porous metal (second component, first component)
25b‧‧‧ metal plate (second part)
35‧‧‧ under filler
36‧‧‧XY Workbench
37‧‧‧ release film
39, 58‧‧‧ material delivery mechanism (resin supply mechanism)
39a, 39b, 58a, 58b ‧‧‧
40, 59‧‧‧Material storage frame
41‧‧‧through hole
42, 60‧‧‧ Peripheral
43‧‧‧Adsorption tank
44‧‧‧Resin material
45‧‧‧ Lower mold (first mold, second mold)
46‧‧‧ peripheral parts
47‧‧‧ bottom parts
48‧‧‧ Cavity
49‧‧‧ Upper mold (second mold, first mold)
50‧‧‧ Wafer parts
51‧‧‧ Substrate (Pre-package substrate)
52‧‧‧ Bumps (connecting parts)
53‧‧‧melt resin (fluid resin)
54‧‧‧hardened resin (sealing resin)
55‧‧‧molded products (electronic parts)
57, 57a ‧‧‧ recess (internal space)
61‧‧‧resin packaging device (manufacturing device)
62‧‧‧ substrate supply storage module
63A, 63B, 63C‧‧‧forming module
64‧‧‧Material supply module
65‧‧‧ Package front substrate (substrate)
66‧‧‧Pre-package substrate supply department
67‧‧‧Substrate after packaging
68‧‧‧ Post-package substrate receiving section
69‧‧‧ Substrate mounting section
70‧‧‧ substrate transfer mechanism (substrate supply mechanism)
71‧‧‧Clamping mechanism
72‧‧‧ Release film supply mechanism
73‧‧‧ heat sink supply mechanism
74‧‧‧Resin material input agency
S1, P1, C1, M1‧‧‧ prescribed positions
第1圖的(a)部分是表示本發明的實施例1的電子部件的結構的示意性剖視圖，第1圖的(b)部分是第1圖的(a)部分的變形例。Part (a) of FIG. 1 is a schematic cross-sectional view showing the structure of the electronic component according to the first embodiment of the present invention, and part (b) of FIG. 1 is a modified example of part (a) of FIG. 1.
第2圖的(a)部分是表示本發明的實施例2的電子部件的結構的示意性剖視圖，第2圖的(b)部分是第2圖的(a)部分的變形例。Part (a) of FIG. 2 is a schematic cross-sectional view showing the structure of an electronic component according to a second embodiment of the present invention, and part (b) of FIG. 2 is a modified example of part (a) of FIG. 2.
第3圖是表示本發明的實施例3的電子部件的結構的示意性剖視圖。FIG. 3 is a schematic cross-sectional view showing a structure of an electronic component according to a third embodiment of the present invention.
第4圖的(a)部分是表示本發明的實施例4的電子部件的結構的示意性剖視圖，第4圖的(b)部分是第4圖的(a)部分的一變形例，第4圖的(c)部分是第4圖的(a)部分的另一變形例。Part (a) of FIG. 4 is a schematic cross-sectional view showing the structure of an electronic component according to a fourth embodiment of the present invention. Part (b) of FIG. 4 is a modified example of part (a) of FIG. 4. Part (c) of the figure is another modification of part (a) of FIG. 4.
第5圖的第(a)到(b)部分是表示本發明的實施例5的電子部件的結構的示意性剖視圖。Parts (a) to (b) of FIG. 5 are schematic cross-sectional views showing the structure of an electronic component according to a fifth embodiment of the present invention.
第6圖的第(a)到(c)部分是表示在本發明的實施例6的製造方法中，將板狀的多孔金屬和樹脂材料收容在材料收容框中的過程的示意性剖視圖。Parts (a) to (c) of FIG. 6 are schematic cross-sectional views showing a process of accommodating a plate-like porous metal and a resin material in a material storage frame in the manufacturing method of Embodiment 6 of the present invention.
第7圖的第(a)到(b)部分是表示在本發明的實施例6的製造方法中，向型腔供給多孔金屬和樹脂材料的過程的示意性剖視圖。Parts (a) to (b) of FIG. 7 are schematic cross-sectional views showing a process of supplying a porous metal and a resin material to the cavity in the manufacturing method of Embodiment 6 of the present invention.
第8圖的第(a)到(c)部分是表示在本發明的實施例6的製造方法中，對多孔金屬和安裝在基板上的晶片部件進行樹脂封裝的過程的示意性剖視圖。Parts (a) to (c) of FIG. 8 are schematic cross-sectional views showing a process of resin-encapsulating a porous metal and a wafer component mounted on a substrate in the manufacturing method of Embodiment 6 of the present invention.
第9圖的第(a)到(c)部分是表示在本發明的實施例7的製造方法中，將多個多孔金屬和樹脂材料收容在材料收容框中的過程的示意性剖視圖。Parts (a) to (c) of FIG. 9 are schematic cross-sectional views showing a process of accommodating a plurality of porous metal and resin materials in a material storage frame in the manufacturing method of Embodiment 7 of the present invention.
第10圖的第(a)到(b)部分是表示在本發明的實施例7的製造方法中，向型腔供給多個多孔金屬和樹脂材料的過程的示意性剖視圖。Parts (a) to (b) of FIG. 10 are schematic cross-sectional views showing a process of supplying a plurality of porous metals and resin materials to the cavity in the manufacturing method of Embodiment 7 of the present invention.
第11圖的第(a)到(c)部分是表示在本發明的實施例7的製造方法中，對安裝在基板上的多個晶片部件和與這些晶片部件對應的多個多孔金屬進行樹脂封裝的過程的示意性剖視圖。Parts (a) to (c) of FIG. 11 show that in the manufacturing method of the seventh embodiment of the present invention, resin is applied to a plurality of wafer components mounted on a substrate and a plurality of porous metals corresponding to the wafer components. A schematic cross-sectional view of the packaging process.
第12圖的第(a)到(c)部分是表示在本發明的實施例8的製造方法中，將蓋狀的多孔金屬和樹脂材料收容在材料收容框中的過程的示意性剖視圖。Parts (a) to (c) of FIG. 12 are schematic cross-sectional views showing a process of accommodating a cover-like porous metal and a resin material in a material storage frame in the manufacturing method of Embodiment 8 of the present invention.
第13圖的第(a)到(b)部分是表示在本發明的實施例8的製造方法中，向型腔供給多孔金屬和樹脂材料的過程的示意性剖視圖。Parts (a) to (b) of FIG. 13 are schematic cross-sectional views showing a process of supplying a porous metal and a resin material to the cavity in the manufacturing method of Embodiment 8 of the present invention.
第14圖的第(a)到(c)部分是表示在本發明的實施例8的製造方法中，對多孔金屬和安裝在基板上的晶片部件進行樹脂封裝的過程的示意性剖視圖。Parts (a) to (c) of FIG. 14 are schematic cross-sectional views illustrating a process of resin-encapsulating a porous metal and a wafer component mounted on a substrate in the manufacturing method according to the eighth embodiment of the present invention.
第15圖的第(a)到(c)部分是表示在本發明的實施例9的製造方法中，對多孔金屬和安裝在基板上的晶片部件進行樹脂封裝的過程的示意性剖視圖。Parts (a) to (c) of FIG. 15 are schematic cross-sectional views showing a process of resin-encapsulating a porous metal and a wafer component mounted on a substrate in the manufacturing method of Embodiment 9 of the present invention.
第16圖是表示本發明製造裝置的裝置概要的俯視圖。Fig. 16 is a plan view showing an outline of the apparatus of the manufacturing apparatus of the present invention.
4‧‧‧佈線 4‧‧‧ wiring
4a‧‧‧接地電極 4a‧‧‧ ground electrode
5‧‧‧基板電極 5‧‧‧ substrate electrode
6‧‧‧通孔佈線 6‧‧‧through hole wiring
7‧‧‧連接盤 7‧‧‧Connecting plate
7a‧‧‧接地用連接盤 7a‧‧‧ grounding connection plate
8、9‧‧‧阻焊膜 8, 9‧‧‧ solder mask
10‧‧‧焊錫球(外部電極) 10‧‧‧solder ball (external electrode)
10a‧‧‧接地用的焊錫球(外部電極) 10a‧‧‧ Ground solder ball (external electrode)
11‧‧‧焊盤電極(晶片電極) 11‧‧‧ pad electrode (chip electrode)
12‧‧‧接合線(連接部件) 12‧‧‧ bonding wire (connecting parts)
13、25‧‧‧多孔金屬 13, 25‧‧‧ porous metal
14‧‧‧封裝樹脂 14‧‧‧Encapsulating resin
19‧‧‧基板電極 19‧‧‧ substrate electrode
26、29、32‧‧‧電子部件 26, 29, 32‧‧‧ electronic components
27、30、33‧‧‧基板 27, 30, 33‧‧‧ substrate
28、31、34‧‧‧半導體晶片(晶片部件) 28, 31, 34‧‧‧ semiconductor wafers (wafer components)
35‧‧‧下填料 35‧‧‧ under filler
Claims (18)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016017681A JP6639931B2 (en) | 2016-02-02 | 2016-02-02 | Apparatus and method for manufacturing electronic component, and electronic component |
| JP2016-017681 | 2016-08-19 |
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| Publication Number | Publication Date |
|---|---|
| TW201806097A true TW201806097A (en) | 2018-02-16 |
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| TW106103074A TW201806097A (en) | 2016-02-02 | 2017-01-25 | Manufacturing apparatus and manufacturing method of electronic component and electronic component |
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| Country | Link |
|---|---|
| JP (1) | JP6639931B2 (en) |
| KR (1) | KR101920972B1 (en) |
| CN (1) | CN107026107B (en) |
| TW (1) | TW201806097A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111834238A (en) * | 2020-08-10 | 2020-10-27 | 李元雄 | A high-power semiconductor device packaging method using bump and flip chip |
| TWI844243B (en) * | 2023-01-18 | 2024-06-01 | 宏碁股份有限公司 | Electronic package structure |
| TWI864819B (en) * | 2023-06-13 | 2024-12-01 | 南茂科技股份有限公司 | Chip on film package structure |
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| CN108321127A (en) * | 2017-12-05 | 2018-07-24 | 合肥矽迈微电子科技有限公司 | A kind of plastic package method and the packaging body using plastic package method preparation |
| JP2019165173A (en) * | 2018-03-20 | 2019-09-26 | 株式会社東芝 | Semiconductor device and manufacturing method of semiconductor device |
| CN109326527B (en) * | 2018-09-27 | 2020-10-13 | 泉州智慧果技术服务有限公司 | Power element packaging module and preparation method thereof |
| US11037883B2 (en) | 2018-11-16 | 2021-06-15 | Analog Devices International Unlimited Company | Regulator circuit package techniques |
| KR102711765B1 (en) | 2019-03-06 | 2024-09-27 | 삼성전기주식회사 | Electronic device module and manufacturing method thereof |
| WO2020188806A1 (en) * | 2019-03-20 | 2020-09-24 | 三菱電機株式会社 | Semiconductor device |
| WO2020213572A1 (en) | 2019-04-15 | 2020-10-22 | 株式会社村田製作所 | Electronic component module |
| KR102345062B1 (en) * | 2019-11-20 | 2021-12-30 | (주)에이티세미콘 | Semiconductor package and manufacturing method thereof |
| JPWO2021177093A1 (en) * | 2020-03-06 | 2021-09-10 | ||
| CN111952206B (en) * | 2020-08-14 | 2022-09-13 | 深圳市天成照明有限公司 | Packaging hardware is used in electronic components production |
| JP7428384B2 (en) * | 2020-10-06 | 2024-02-06 | アピックヤマダ株式会社 | Resin sealing equipment and resin sealing method |
| WO2022158474A1 (en) * | 2021-01-19 | 2022-07-28 | ベジ 佐々木 | Electronic device and product |
| CN113299566B (en) * | 2021-05-20 | 2023-01-24 | 合肥速芯微电子有限责任公司 | Packaging structure and preparation method thereof |
| CN114496808B (en) * | 2022-01-25 | 2024-03-12 | 河北博威集成电路有限公司 | Flip-chip plastic package assembly method, shielding system, heat dissipation system and application |
| CN114823370B (en) * | 2022-05-10 | 2022-10-14 | 山东汉旗科技有限公司 | Fingerprint identification chip packaging structure and packaging method |
| CN117457618B (en) * | 2023-12-25 | 2024-04-09 | 长电集成电路(绍兴)有限公司 | Chip packaging structure and chip packaging method |
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| JP3434711B2 (en) * | 1998-09-24 | 2003-08-11 | 株式会社巴川製紙所 | Heat dissipation sheet |
| JP4253992B2 (en) * | 2000-03-16 | 2009-04-15 | 株式会社デンソー | Resin-sealed semiconductor device |
| JP4630449B2 (en) * | 2000-11-16 | 2011-02-09 | Ｔｏｗａ株式会社 | Semiconductor device and manufacturing method thereof |
| CN101587887A (en) * | 2008-05-23 | 2009-11-25 | 富准精密工业(深圳)有限公司 | Light-emitting diode structure |
| JP5740995B2 (en) * | 2011-01-17 | 2015-07-01 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
| JP6169516B2 (en) * | 2014-03-31 | 2017-07-26 | Ｔｏｗａ株式会社 | Resin molding apparatus and resin molding method |
| JP6017492B2 (en) * | 2014-04-24 | 2016-11-02 | Ｔｏｗａ株式会社 | Manufacturing method of resin-encapsulated electronic component, plate-like member with protruding electrode, and resin-encapsulated electronic component |
| JP6298719B2 (en) * | 2014-06-09 | 2018-03-20 | Ｔｏｗａ株式会社 | Resin sealing device and resin sealing method |
| JP5944445B2 (en) * | 2014-07-18 | 2016-07-05 | Ｔｏｗａ株式会社 | Manufacturing method of resin-encapsulated electronic component, plate-like member with protruding electrode, resin-encapsulated electronic component, and manufacturing method of plate-like member with protruding electrode |
-
2016
- 2016-02-02 JP JP2016017681A patent/JP6639931B2/en active Active
- 2016-12-09 KR KR1020160167370A patent/KR101920972B1/en active Active
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2017
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111834238A (en) * | 2020-08-10 | 2020-10-27 | 李元雄 | A high-power semiconductor device packaging method using bump and flip chip |
| TWI844243B (en) * | 2023-01-18 | 2024-06-01 | 宏碁股份有限公司 | Electronic package structure |
| TWI864819B (en) * | 2023-06-13 | 2024-12-01 | 南茂科技股份有限公司 | Chip on film package structure |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170092096A (en) | 2017-08-10 |
| JP6639931B2 (en) | 2020-02-05 |
| KR101920972B1 (en) | 2018-11-21 |
| CN107026107B (en) | 2020-08-18 |
| CN107026107A (en) | 2017-08-08 |
| JP2017139278A (en) | 2017-08-10 |
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