TW201738528A - Crucible measurement device, crucible measurement method, and crucible production method - Google Patents
Crucible measurement device, crucible measurement method, and crucible production method Download PDFInfo
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- TW201738528A TW201738528A TW106107890A TW106107890A TW201738528A TW 201738528 A TW201738528 A TW 201738528A TW 106107890 A TW106107890 A TW 106107890A TW 106107890 A TW106107890 A TW 106107890A TW 201738528 A TW201738528 A TW 201738528A
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- glass crucible
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- oxide glass
- yttrium oxide
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- 238000005259 measurement Methods 0.000 title claims abstract description 69
- 238000000691 measurement method Methods 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000075 oxide glass Substances 0.000 claims description 353
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 216
- 239000011521 glass Substances 0.000 claims description 144
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 100
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 100
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 65
- 238000005286 illumination Methods 0.000 claims description 46
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 42
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 42
- 229910052727 yttrium Inorganic materials 0.000 claims description 39
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 39
- 238000001069 Raman spectroscopy Methods 0.000 claims description 32
- 238000007689 inspection Methods 0.000 claims description 8
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 7
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 5
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 292
- 238000000149 argon plasma sintering Methods 0.000 description 54
- 230000007547 defect Effects 0.000 description 46
- 239000013078 crystal Substances 0.000 description 37
- 238000003384 imaging method Methods 0.000 description 34
- 238000001237 Raman spectrum Methods 0.000 description 26
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 23
- 229910052707 ruthenium Inorganic materials 0.000 description 23
- 230000005540 biological transmission Effects 0.000 description 12
- 239000000843 powder Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 238000003841 Raman measurement Methods 0.000 description 10
- 229910052732 germanium Inorganic materials 0.000 description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 10
- 229910052734 helium Inorganic materials 0.000 description 8
- 239000001307 helium Substances 0.000 description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 229910052741 iridium Inorganic materials 0.000 description 8
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 8
- 238000011179 visual inspection Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 230000000007 visual effect Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 6
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 229910000457 iridium oxide Inorganic materials 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 230000010365 information processing Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- MBIDWOISWGGCJD-UHFFFAOYSA-N [O].[Bi].[Bi] Chemical compound [O].[Bi].[Bi] MBIDWOISWGGCJD-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000001066 destructive effect Effects 0.000 description 3
- 238000010191 image analysis Methods 0.000 description 3
- 238000007373 indentation Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 206010036790 Productive cough Diseases 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012634 optical imaging Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 210000003802 sputum Anatomy 0.000 description 2
- 208000024794 sputum Diseases 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- DVOKWRXNWTZRDW-UHFFFAOYSA-N [Ru].[Ru]=O Chemical compound [Ru].[Ru]=O DVOKWRXNWTZRDW-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- MKLDNBMOMTWQRN-UHFFFAOYSA-N beryllium tantalum Chemical compound [Be].[Ta] MKLDNBMOMTWQRN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- NNTJREVEEOPLFV-UHFFFAOYSA-N tantalum yttrium Chemical compound [Y][Ta] NNTJREVEEOPLFV-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
本發明涉及對氧化矽玻璃坩堝的厚度方向的層構造進行測量的坩堝測量裝置、坩堝測量方法以及坩堝的製造方法。 The present invention relates to a ruthenium measurement device, a ruthenium measurement method, and a ruthenium production method for measuring a layer structure in a thickness direction of a yttrium oxide glass crucible.
在用於單晶矽提拉所用的氧化矽玻璃坩堝中,例如通過設置透明層和含氣泡層等,來減少單晶矽提拉時棕環(brown ring)的產生,另外更容易地進行熱控制並提高單晶矽的結晶性等。 In the yttrium oxide glass crucible used for pulling the single crystal crucible, for example, by providing a transparent layer and a bubble-containing layer, etc., the generation of a brown ring during the pulling of the single crystal crucible is reduced, and heat is more easily performed. Control and improve the crystallinity of the single crystal germanium.
單晶矽提拉時氧化矽玻璃坩堝暴露在矽的熔化溫度即1410℃左右以上的高溫中。在含氣泡層中的氣泡密度不均勻的情況下,例如在含氣泡層由具有多個不同氣泡密度的層形成的情況下,因為氣泡密度不同的層的熱膨脹率是不同的,所以在矽熔化溫度的高溫狀態下,具有不同氣泡密度的層所受到的力分別是不同的。因此,根據氧化矽玻璃坩堝的形狀、矽溶液的品質、暴露在高溫中的時間等的不同,存在氧化矽玻璃坩堝發生變形或者破損的可能性。 When the single crystal crucible is pulled, the cerium oxide glass crucible is exposed to the melting temperature of the crucible, that is, at a high temperature of about 1410 ° C or higher. In the case where the density of the bubbles in the bubble-containing layer is not uniform, for example, in the case where the bubble-containing layer is formed of a layer having a plurality of different bubble densities, since the coefficients of thermal expansion of the layers having different bubble densities are different, they are melted in the crucible. At high temperatures in the temperature, the layers with different bubble densities are subjected to different forces. Therefore, depending on the shape of the cerium oxide glass crucible, the quality of the cerium solution, the time of exposure to high temperature, and the like, there is a possibility that the cerium oxide cerium is deformed or broken.
另一方面,例如在氧化矽玻璃坩堝在厚度方向由單一層構成的情況下,氧化矽玻璃的結構原子在氧化矽玻璃坩堝的厚度方向也連接成網路狀,在該層內成為相同氧化矽網路的構造。因此,一旦氧化矽玻璃坩堝產生裂痕,網路狀鍵合發生斷裂,該裂痕會擴大到坩堝的大範圍區域,其結果,還存在著氧化矽玻璃坩堝發生裂縫的情況。另一方面,在氧化矽玻璃坩堝在厚度方向由透明層以及含氣泡層這多個層構成的情況下,或者在氧化矽玻璃坩堝在厚度方向透明層或含氣泡層由多個層構成的情況下,在厚度方向存在多個界面,以該界面部為邊界,氧化矽網路的構造是不同的,因此裂痕的擴大止於該界面部分。 On the other hand, for example, in the case where the yttrium oxide glass crucible is composed of a single layer in the thickness direction, the structural atoms of the yttria glass are also connected in a network shape in the thickness direction of the yttrium oxide glass crucible, and become the same yttrium oxide in the layer. The construction of the network. Therefore, when the bismuth oxide glass crucible is cracked, the network-like bond is broken, and the crack is expanded to a large area of the crucible, and as a result, cracks occur in the cerium oxide glass crucible. On the other hand, in the case where the yttria glass crucible is composed of a plurality of layers of a transparent layer and a bubble-containing layer in the thickness direction, or in the case where the yttrium oxide glass crucible is formed of a plurality of layers in the thickness direction transparent layer or the bubble-containing layer. Next, there are a plurality of interfaces in the thickness direction, and the interface of the yttrium oxide network is different with the interface portion as a boundary, so that the expansion of the crack stops at the interface portion.
如上述那樣,因為氧化矽玻璃坩堝的厚度方向的層構造對於耐熱特性以及耐衝擊特性等的影響較大,所以重要之處在於進行該層構造的測量。但是,氧化矽玻璃是透明的,因此在氣泡的大小非常小的情況下,有時通過目測無法充分地觀察這些層構造。另外,在透明層中,即便通過目測檢查等觀察不到異常,有時也會存在非常小的裂紋等缺陷。 As described above, since the layer structure in the thickness direction of the cerium oxide glass crucible has a large influence on heat resistance characteristics, impact resistance characteristics, and the like, it is important to measure the layer structure. However, since cerium oxide glass is transparent, when the size of a bubble is very small, these layer structures may not be fully observed by visual observation. Further, in the transparent layer, even if an abnormality is not observed by visual inspection or the like, there are cases where defects such as very small cracks are present.
這些氧化矽玻璃坩堝的層構造或非常小的裂紋等缺陷如果在單晶矽提拉時暴露在矽溶液中,則有可能誘發矽鑄錠(silicon ingot)發生缺陷,在氧化矽玻璃坩堝的設計和品質管制等中,重要之處在於測量氧化矽玻璃坩堝的層構造或非常小的裂紋等缺陷。 If the defects such as the layer structure or very small crack of the yttrium oxide glass crucible are exposed to the ruthenium solution during the pulling of the single crystal ruthenium, it is possible to induce defects in the silicon ingot, and the design of the bismuth oxide bismuth glass ruthenium. In the quality control, etc., it is important to measure the layer structure of the bismuth oxide glass crucible or a defect such as a very small crack.
用於單晶矽提拉的氧化矽玻璃坩堝一般地通過旋轉模具法來製造,所以難以控制形狀、內部等的特性等。製造出的氧化矽玻璃坩堝儘管要進行下述方式的測量,但是因為需要保持氧化矽玻璃坩堝的內表面的清潔,所以是以非接觸的方式進行的。 The yttrium oxide glass crucible used for the pulling of the single crystal crucible is generally produced by a rotary die method, so that it is difficult to control characteristics such as shape, interior, and the like. The produced cerium oxide glass crucible was measured in the following manner, but it was carried out in a non-contact manner because it was necessary to keep the inner surface of the cerium oxide glass crucible clean.
選取製造出的氧化矽玻璃坩堝,以破壞檢查的方式來確認製造出的氧化矽玻璃坩堝的厚度方向的層構造和缺陷等。一般地,目測檢查與通過光學顯微鏡等觀察物件的情況相同,利用透射光等。例如,在連接光源和觀測地點的線上設置薄片化後的氧化矽玻璃坩堝,對其照射光,目測氧化矽玻璃坩堝的透射光或者將其圖像化,來檢測玻璃中的缺陷等。 The produced yttrium oxide glass crucible was selected, and the layer structure and defects in the thickness direction of the produced yttrium oxide glass crucible were confirmed by the manner of destruction inspection. In general, the visual inspection is the same as the case of observing an object by an optical microscope or the like, and transmitted light or the like is used. For example, a thinned yttria glass crucible is provided on a line connecting the light source and the observation point, and the light is irradiated, and the transmitted light of the yttrium oxide glass crucible is visually observed or imaged to detect defects or the like in the glass.
另外,作為氧化矽玻璃坩堝的檢查方法,已知專利文獻1所記載的方法,一邊改變光學拍攝裝置的焦點深度,一邊在氧化矽玻璃坩堝的深度方向獲取圖像,以非破壞性方式來檢查氧化矽玻璃坩堝中的氣泡,測量氣泡含有率。 In addition, as a method of inspecting the bismuth oxide glass crucible, the method described in Patent Document 1 is known, and an image is acquired in the depth direction of the bismuth oxide glass crucible while changing the depth of focus of the optical imaging device, and is inspected in a non-destructive manner. The bubbles in the cerium oxide glass crucible were measured to measure the bubble content.
並且,還已知專利文獻2所記載的方法,求取氧化矽玻璃坩堝的內表面的三維座標,在多個測量點測量氧化矽玻璃坩堝的內表面的拉曼光譜,由此來決定內表面拉曼光譜的三維分佈。 Further, the method described in Patent Document 2 is also known, and the three-dimensional coordinates of the inner surface of the yttrium oxide glass crucible are obtained, and the Raman spectrum of the inner surface of the yttrium oxide glass crucible is measured at a plurality of measurement points, thereby determining the inner surface. The three-dimensional distribution of the Raman spectrum.
並且,也還已知專利文獻3所記載的檢測方法以及專利文獻4所記載 的方法。在專利文獻3所記載的檢測方法中,將例如波長短於365nm的紫外光照射到氧化矽玻璃坩堝的壁面,測量所產生的波長為400nm至600nm的光的螢光斑點的數量,由此來檢測在氧化矽玻璃坩堝中局部存在的雜質,其中該雜質是單晶矽提拉時產生結晶缺損等的原因。在專利文獻4所記載的方法中,射入雷射,根據由於射入而產生的螢光的波長和強度來確定雜質成分,並且算出雜質成分的含有量,由此檢測在氧化矽玻璃坩堝的內表面的最表層(top surface)中含有的雜質成分。 Further, the detection method described in Patent Document 3 and the patent document 4 are also known. Methods. In the detection method described in Patent Document 3, for example, ultraviolet light having a wavelength shorter than 365 nm is irradiated onto the wall surface of the yttrium oxide glass crucible, and the number of generated fluorescent spots of light having a wavelength of 400 nm to 600 nm is measured, thereby The impurities locally present in the cerium oxide glass crucible are detected, and the impurities are causes of crystal defects or the like when the single crystal crucible is pulled. In the method described in Patent Document 4, a laser is incident, an impurity component is determined based on the wavelength and intensity of the fluorescence generated by the incident, and the content of the impurity component is calculated, thereby detecting the bismuth oxide bismuth glass. An impurity component contained in the top surface of the inner surface.
然而,在目測檢查中,在光的透射面整體上沿著光的透射方向形成有層狀構造的情況下,無法檢測該層構造。另外,在例如缺陷等很小的情況下,有時由該缺陷產生的衍射光等的強度不夠,而無法檢測隱藏在來自光源的透射光中的缺陷等。專利文獻1至專利文獻3所記載的檢查方法是測量氧化矽玻璃坩堝的形狀或內表面附近的狀態的方法,因此無法檢測通過目測檢查等無法檢測出的在所述氧化矽玻璃坩堝的厚度方向的透明層內部或含氣泡層內部存在的進一步的層構造或者透明層內的非常小的裂紋等缺陷。 However, in the visual inspection, when a layered structure is formed along the transmission direction of light as a whole on the transmission surface of light, the layer structure cannot be detected. In addition, when the defect or the like is small, for example, the intensity of the diffracted light or the like generated by the defect may be insufficient, and the defect or the like hidden in the transmitted light from the light source may not be detected. The inspection methods described in Patent Document 1 to Patent Document 3 are methods for measuring the shape of the yttrium oxide glass crucible or the state near the inner surface. Therefore, it is impossible to detect the thickness direction of the yttrium oxide glass crucible which cannot be detected by visual inspection or the like. Further layer constructions inside the transparent layer or inside the bubble-containing layer or defects such as very small cracks in the transparent layer.
現有技術文獻 Prior art literature
專利文獻 Patent literature
專利文獻1:日本特開2012-116713號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2012-116713
專利文獻2:日本特開2013-133227號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 2013-133227
專利文獻3:日本特開平3-146496號公報 Patent Document 3: Japanese Patent Laid-Open No. Hei 3-146496
專利文獻4:日本特開2012-17243號公報 Patent Document 4: Japanese Laid-Open Patent Publication No. 2012-17243
本發明的課題在於提供一種技術,能夠非破壞性且簡便地檢測以往無法檢測出的在透明層或含氣泡層內部存在的進一步的層構造或者缺陷等。 An object of the present invention is to provide a technique capable of detecting a further layer structure or defect existing in a transparent layer or a bubble-containing layer which has not been detected in the past, without being destructively and simply.
本發明人發明出一種方法,對氧化矽玻璃坩堝的上端面或者氧化矽玻 璃坩堝的上端部附近的內側表面射入雷射,觀察該氧化矽玻璃坩堝的側壁部內部的厚度方向的各位置處的散射光,由此能夠發現現有方法中無法檢測出的在透明層或含氣泡層的內部存在的進一步的層構造或者缺陷等的存在,非破壞性且簡便地觀察它們。 The inventors have invented a method for the upper end face of yttrium oxide yttrium glass or yttrium oxide glass The inner surface of the vicinity of the upper end portion of the glass crucible is incident on the laser beam, and the scattered light at each position in the thickness direction inside the side wall portion of the cerium oxide glass crucible is observed, whereby the transparent layer or the undetectable layer in the conventional method can be found. The presence of further layer structures or defects or the like existing inside the bubble-containing layer is observed non-destructively and simply.
根據本方法發明,能夠以非破壞性且簡便的方法來觀察透明層或含氣泡層內部的層構造以及缺陷等。另外,在氧化矽玻璃坩堝的製造程序中,通過進行本發明的檢查,能夠判別具有某種缺陷等的氧化矽玻璃坩堝。並且,通過使用經過該製造程序的氧化矽玻璃坩堝,能夠降低由於坩堝缺陷而導致的單晶矽鑄錠結晶缺陷的產生。 According to the method of the present invention, the layer structure, the defects, and the like inside the transparent layer or the bubble-containing layer can be observed in a non-destructive and simple manner. Further, in the manufacturing procedure of the yttrium oxide glass crucible, it is possible to discriminate the cerium oxide glass crucible having a certain defect or the like by performing the inspection of the present invention. Further, by using the yttria glass crucible that has passed through the manufacturing process, it is possible to reduce the occurrence of crystal defects of the single crystal bismuth ingot due to defects in ruthenium.
1‧‧‧氧化矽玻璃坩堝 1‧‧‧Oxide glass
2‧‧‧雷射光源 2‧‧‧Laser light source
3‧‧‧拍攝裝置部 3‧‧‧Photographing Department
4‧‧‧照明部 4‧‧‧Lighting Department
21‧‧‧雷射部 21‧‧‧Ray Department
31‧‧‧拉曼分光測量部 31‧‧‧Raman Spectrometry Department
311‧‧‧瑞利光除去濾波器 311‧‧‧Rayleigh light removal filter
312‧‧‧分光器 312‧‧ ‧ splitter
313‧‧‧檢測器 313‧‧‧Detector
圖1是表示本發明的第一實施方式涉及的坩堝測量裝置的結構的一個示例的圖。 FIG. 1 is a view showing an example of a configuration of a flaw measuring device according to a first embodiment of the present invention.
圖2是表示從端面方向測量對氧化矽玻璃坩堝射入雷射時的狀態時的一個示例的圖。 2 is a view showing an example of a state in which a state in which a cerium oxide glass crucible is incident on a laser is measured from the end surface direction.
圖3是表示從端面方向測量對氧化矽玻璃坩堝射入雷射時的狀態時的一個示例的圖。 3 is a view showing an example of a state in which a laser beam is incident on a laser beam from the end surface direction.
圖4是表示從端面方向測量對氧化矽玻璃坩堝射入雷射時的狀態時的一個示例的圖。 4 is a view showing an example of a state in which a laser beam is incident on a laser beam from the end surface direction.
圖5是表示第一實施方式涉及的坩堝測量方法的流程的一個示例的流程圖。 FIG. 5 is a flowchart showing an example of a flow of a flaw measurement method according to the first embodiment.
圖6是表示實際的測量圖像的一個示例的圖。 Fig. 6 is a view showing an example of an actual measurement image.
圖7是表示實際的測量圖像的一個示例的圖。 Fig. 7 is a view showing an example of an actual measurement image.
圖8是表示實際的測量圖像的一個示例的圖。 FIG. 8 is a diagram showing an example of an actual measurement image.
圖9是表示實際的測量圖像的一個示例的圖。 FIG. 9 is a diagram showing an example of an actual measurement image.
圖10是表示圖6所示的氧化矽玻璃坩堝的內部殘留應力的圖。 Fig. 10 is a view showing internal residual stress of the yttria glass crucible shown in Fig. 6;
圖11是表示圖7所示的氧化矽玻璃坩堝的內部殘留應力的圖。 Fig. 11 is a view showing internal residual stress of the yttria glass crucible shown in Fig. 7;
圖12是表示利用了交叉(cross)線性雷射時的散射狀況的一個示例的圖。 Fig. 12 is a view showing an example of a scattering condition when a cross linear laser is used.
圖13是表示利用了交叉線性雷射時的散射狀況的一個示例的圖。 FIG. 13 is a view showing an example of a scattering state when a cross-linear laser is used.
圖14是表示第二實施方式涉及的坩堝測量裝置的結構的一個示例的圖。 FIG. 14 is a view showing an example of a configuration of a flaw measuring device according to a second embodiment.
圖15是表示第二實施方式涉及的坩堝測量方法的流程的一個示例的流程圖。 FIG. 15 is a flowchart showing an example of a flow of a flaw measurement method according to the second embodiment.
圖16是表示坩堝內表面與照明部之間的距離給予散射狀況測量的影響的圖。 Fig. 16 is a view showing the influence of the distance between the inner surface of the crucible and the illumination portion on the measurement of the scattering condition.
圖17是表示第三實施方式的坩堝測量裝置的結構的一個示例的圖。 Fig. 17 is a view showing an example of a configuration of a flaw measuring device according to a third embodiment.
圖18是表示第三實施方式的坩堝測量裝置進行拉曼光譜測量的位置的一個示例的圖。 18 is a view showing an example of a position at which the sputum measuring device of the third embodiment performs Raman spectroscopy.
圖19是表示第三實施方式涉及的坩堝測量方法的流程的一個示例的流程圖。 19 is a flow chart showing an example of a flow of a flaw measurement method according to the third embodiment.
圖20是實際測量的拉曼光譜的一個示例。 Figure 20 is an example of an actually measured Raman spectrum.
圖21是實際測量的拉曼光譜的一個示例。 Figure 21 is an example of an actually measured Raman spectrum.
本說明書中的雷射的散射狀況是指雷射散射光的擴展或強度的狀態。另外,光透射層是指透明層且不存在裂紋等缺陷等的區域。將含氣泡層內或者透明層記憶體在裂紋等缺陷的層稱為“光散射層”。 The scattering state of the laser in this specification refers to a state in which the laser light is spread or intensified. Further, the light transmitting layer refers to a transparent layer and does not have a region such as a crack or the like. A layer in a bubble-containing layer or a transparent layer memory in which a defect such as a crack is referred to as a "light-scattering layer".
本實施方式的氧化矽玻璃坩堝具有如下形狀,該形狀包括:在上端具有開口部的圓筒狀的側壁部(直筒部);彎曲的底部;以及連結側壁部和底部且與底部相比曲率較大的角部。另外,氧化矽玻璃坩堝的側壁部的上端面形成為圓環狀的平坦面。另外,氧化矽玻璃坩堝例如從該氧化矽玻璃坩堝的內表面朝向外表面包括多個層而構成,其中,該多個層包括基於目測或圖像數據等不能觀察到氣泡的透明層和能夠觀察到氣泡的含氣泡層等。 The yttrium oxide glass crucible according to the present embodiment has a shape including a cylindrical side wall portion (straight cylindrical portion) having an opening at the upper end; a curved bottom portion; and a side wall portion and a bottom portion which are curved compared with the bottom portion Big corner. Further, the upper end surface of the side wall portion of the yttria glass crucible is formed into an annular flat surface. Further, the cerium oxide glass crucible is composed of, for example, a plurality of layers from an inner surface toward an outer surface of the yttrium oxide glass crucible, wherein the plurality of layers include a transparent layer which cannot observe bubbles based on visual observation or image data, and can be observed. To the bubble-containing layer of bubbles, etc.
本實施方式的氧化矽玻璃坩堝例如利用旋轉模具法而製造。旋轉模具法是在旋轉的(碳製)模具中堆積氧化矽粉,對堆積的氧化矽粉層進行電弧熔融,由此來製造氧化矽玻璃坩堝的方法。因為氧化矽玻璃坩堝的開口端部附近的形狀易於變得不整齊,所以將通過旋轉模具法製造的氧化矽玻璃坩堝的開口端部切斷成規定寬度,來使開口端部的形狀變得整齊。 The cerium oxide glass crucible of the present embodiment is produced, for example, by a rotary die method. The rotary die method is a method in which cerium oxide powder is deposited by rotating a cerium oxide powder in a rotating (carbon) mold and arc-melting the deposited cerium oxide powder layer. Since the shape of the vicinity of the opening end portion of the yttrium oxide glass crucible is likely to be irregular, the opening end portion of the yttrium oxide glass crucible produced by the rotary die method is cut into a predetermined width to make the shape of the opening end portion uniform. .
例如,通過一邊使上述氧化矽玻璃坩堝旋轉一邊在其內側熔化多晶矽,使該矽的溶液與晶種相接觸,在頸縮處理後對晶種進行提拉,由此來製造單晶矽。另外,一般地,單晶矽的每次提拉都用到氧化矽玻璃坩堝。即,針對單晶矽的每次提拉都需要單獨地準備氧化矽玻璃坩堝。 For example, by rotating the polycrystalline germanium on the inside while rotating the above-described yttria glass crucible, the solution of the crucible is brought into contact with the seed crystal, and the seed crystal is pulled after the necking treatment, thereby producing a single crystal crucible. Further, in general, yttrium oxide glass crucible is used for each pulling of a single crystal crucible. That is, it is necessary to separately prepare the yttrium oxide glass crucible for each pulling of the single crystal crucible.
作為上述氧化矽玻璃坩堝的示例,在氧化矽玻璃坩堝中豎直方向所形成的部分的上端和下端的中間部分,含氣泡層的厚度與透明層的厚度之比是0.7~1.4,根據該結構,能夠將加熱導致的體積膨脹抑制到最小限度,能夠降低氧化矽玻璃坩堝的變形或熔損(日本特開2012-116713號公報)。 As an example of the above-described yttria glass crucible, the ratio of the thickness of the bubble-containing layer to the thickness of the transparent layer is 0.7 to 1.4 in the intermediate portion between the upper end and the lower end of the portion formed in the vertical direction of the yttrium oxide glass crucible, according to the structure The volume expansion due to heating can be minimized, and deformation or melt loss of the yttrium oxide glass crucible can be reduced (JP-A-2012-116713).
另外,通過從氧化矽玻璃坩堝的內表面朝向外表面,沿著厚度方向形成合成氧化矽玻璃層、天然氧化矽玻璃層、含雜質氧化矽玻璃層以及天然氧化矽玻璃層,能夠降低氧化矽玻璃坩堝的變形或熔損(日本特開第2012-6804號公報)。 In addition, by forming a synthetic yttria glass layer, a natural yttria glass layer, an yttria-containing yttria glass layer, and a natural yttria glass layer from the inner surface toward the outer surface of the yttrium glass yttrium, the yttria glass can be reduced. Deformation or melting loss of 坩埚 (Japanese Patent Laid-Open No. 2012-6804).
並且,坩堝內表面的正圓度和坩堝外表面的正圓度,相對於與正圓度同一測量高度的最大壁厚M,均是0.4以下,由此能夠在單晶矽提拉時實現較高的結晶化率(日本特開2009-286651號公報)。 Further, the roundness of the inner surface of the crucible and the roundness of the outer surface of the crucible are 0.4 or less with respect to the maximum wall thickness M of the same measurement height as the roundness, thereby enabling comparison at the time of pulling the single crystal crucible. High crystallization ratio (JP-A-2009-286651).
如上述文獻那樣,已知具有各種構造的氧化矽玻璃坩堝。然而,在氧化矽玻璃坩堝中,設置透明層和含氣泡層的目的是,減少產生棕環的原因等來提高要被提拉的單晶矽的品質,使單晶矽提拉時的熱控制變得容易等。然而,在透明層中,即便基於目測或圖像數據等未觀察到氣泡,有時也存在非常小的裂紋等缺陷。另外,在目測中觀察到由單層構成的含氣泡層有時實際上是由多層構造構成的。這樣,在氧化矽玻璃坩堝的厚度方向的層構造中,有時存在目測中難以判別的缺陷。這樣的缺陷有可能導致單晶矽提拉時要重新進行提拉或提拉中氧化矽玻璃坩堝發生破損。因此,優選在事前判別具有這樣的缺陷的氧化矽玻璃坩堝。然而,如上述那樣,無論是存在缺陷的氧化矽玻璃坩堝還是不存在缺陷的氧化矽玻璃坩堝,在目測等中均同樣地被看作具有透明層和含氣泡層的氧化矽玻璃坩堝。因此,產生了通過目測等無法在事前判別氧化矽玻璃坩堝的厚度方向的層構造中存在問題的氧化矽玻璃坩堝這樣的問題。 As described above, cerium oxide glass crucible having various structures is known. However, in the bismuth oxide glass crucible, the purpose of providing the transparent layer and the bubble-containing layer is to reduce the cause of the brown ring, etc., to improve the quality of the single crystal crucible to be pulled, and to control the heat of the single crystal crucible. It becomes easy to wait. However, in the transparent layer, even if no bubbles are observed based on visual observation or image data, there are cases where defects such as very small cracks are present. Further, it was observed in the visual observation that the bubble-containing layer composed of a single layer was actually composed of a multilayer structure. As described above, in the layer structure in the thickness direction of the yttrium oxide glass crucible, there are cases in which it is difficult to discriminate in the visual inspection. Such defects may cause damage to the bismuth oxide glass crucible during re-drawing or pulling of the single crystal crucible. Therefore, it is preferable to discriminate the cerium oxide glass crucible having such a defect beforehand. However, as described above, the yttria glass crucible having no defects or the yttrium oxide glass crucible having no defects is similarly regarded as a yttria glass crucible having a transparent layer and a bubble-containing layer in visual observation or the like. Therefore, there has been a problem that it is impossible to discriminate the cerium oxide glass crucible which has a problem in the layer structure in the thickness direction of the cerium oxide glass crucible by visual observation or the like.
如上述那樣,通過目測無法在事前判別氧化矽玻璃坩堝的厚度方向的層構造。因此,考慮利用專利文獻1或專利文獻2至4所記載的測量氧化矽玻璃坩堝的技術,來測量製造出的氧化矽玻璃坩堝的厚度方向的層構造。然而,如果利用專利文獻1所記載的方法在厚度方向進行圖像解析,則例如在判別遍及氧化矽玻璃坩堝全周的厚度方向的層構造時,需要遍及氧化矽玻璃坩堝的全周在厚度方向的各個點進行測量,因此會花費大量的精力和時間。另外,在專利文獻1所記載的方法中,因為在厚度方向的各個點進行測量,所以在厚度方向僅能進行不連續的解析。並且,專利文獻1所記載的方法是測量氣泡的方法,無法判別透明層的構造。這樣,若想要利用引用文獻1所記載的方法來測量厚度方向的層構造,就會存在如下問題:花費大量的精力和時間,在厚度方向無法進行連續的解析,另外測量物件受限。 As described above, the layer structure in the thickness direction of the cerium oxide glass crucible cannot be discriminated in advance by visual observation. Therefore, the layer structure in the thickness direction of the produced yttrium oxide glass crucible is measured by the technique of measuring the yttrium oxide glass crucible described in Patent Document 1 or Patent Documents 2 to 4. However, when the image analysis is performed in the thickness direction by the method described in Patent Document 1, for example, when the layer structure in the thickness direction of the entire circumference of the yttrium oxide glass crucible is determined, it is necessary to extend over the entire circumference of the bismuth oxide glass crucible in the thickness direction. Each point is measured, so it takes a lot of effort and time. Further, in the method described in Patent Document 1, since measurement is performed at each point in the thickness direction, only discontinuous analysis can be performed in the thickness direction. Further, the method described in Patent Document 1 is a method of measuring bubbles, and the structure of the transparent layer cannot be discriminated. As described above, when the layer structure in the thickness direction is to be measured by the method described in the cited document 1, there is a problem that it takes a lot of effort and time, continuous analysis cannot be performed in the thickness direction, and the measurement object is limited.
另外,專利文獻2至專利文獻4所記載的技術是測量氧化矽玻璃坩堝內表面的狀態的技術。因此,在專利文獻2至專利文獻4的技術中,無法確認氧化矽玻璃坩堝的厚度方向的層構造。這樣,在專利文獻1或專利文獻2至專利文獻4等的技術中,會產生如下問題:無法測量製造出的氧化矽玻璃坩堝的厚度方向的層構造,或者測量時要花費大量的精力和時間。因此,一般地,通過選取製造出的氧化矽玻璃坩堝的一部分,進行破壞檢查,由此來確認製造出的氧化矽玻璃坩堝的厚度方向的層構造。 Further, the techniques described in Patent Document 2 to Patent Document 4 are techniques for measuring the state of the inner surface of the cerium oxide glass crucible. Therefore, in the techniques of Patent Document 2 to Patent Document 4, the layer structure in the thickness direction of the bismuth oxide glass crucible cannot be confirmed. As described above, in the techniques of Patent Document 1 or Patent Document 2 to Patent Document 4, there is a problem in that it is impossible to measure the layer structure in the thickness direction of the manufactured yttrium oxide glass crucible, or it takes a lot of effort and time in measurement. . Therefore, in general, a part of the produced cerium oxide glass crucible is selected and subjected to a failure inspection, thereby confirming the layer structure in the thickness direction of the produced cerium oxide glass crucible.
作為本發明的一個方式的氧化矽玻璃坩堝的評價裝置是通過旋轉模具法製造出的氧化矽玻璃坩堝的評價裝置,對射入氧化矽玻璃坩堝的上端面或者氧化矽玻璃坩堝的上端部附近的內側表面的雷射在氧化矽玻璃坩堝的側壁部內部的厚度方向的各位置處的散射狀況進行測量,所述氧化矽玻璃坩堝具有:在上端具有開口部的圓筒狀的直筒部;彎曲的底部;以及連結所述側壁部和所述底部且與底部相比曲率較大的角部,所述直筒部的上端被平坦地形成。 An evaluation device for a cerium oxide glass crucible according to one embodiment of the present invention is an evaluation device for a cerium oxide glass crucible manufactured by a rotary die method, and is applied to an upper end surface of a cerium oxide glass crucible or an upper end portion of a cerium oxide glass crucible. The laser beam on the inner side surface is measured at a scattering position at each position in the thickness direction inside the side wall portion of the cerium oxide glass crucible, and the cerium oxide glass crucible has a cylindrical straight portion having an opening at the upper end; a bottom portion; and a corner portion that connects the side wall portion and the bottom portion and has a larger curvature than the bottom portion, and an upper end of the straight cylindrical portion is formed flat.
另外,作為本發明的另一個方式的坩堝測量方法採用以下步驟:對作為測量對象的氧化矽玻璃坩堝的上端面或者氧化矽玻璃坩堝的上端部附近的內側表面射出雷射,測量射入到氧化矽玻璃坩堝內的雷射在氧化矽玻璃坩堝的側壁部內部的厚度方向的各位置處的散射狀況,所述氧化矽玻璃坩 堝具有:在上端具有開口部的圓筒狀的直筒部;彎曲的底部;以及連結所述側壁部和所述底部且與底部相比曲率較大的角部,所述直筒部的上端被平坦地形成。 Further, the ruthenium measurement method according to another aspect of the present invention employs the steps of: emitting a laser to the upper end surface of the yttrium oxide glass crucible as a measurement target or the inner surface near the upper end portion of the yttrium-doped yttrium glass, and measuring the injection into the oxidation. The scattering state of the laser in the glass crucible at various positions in the thickness direction inside the side wall portion of the cerium oxide glass crucible The crucible has a cylindrical straight portion having an opening at an upper end, a curved bottom portion, and a corner portion connecting the side wall portion and the bottom portion and having a larger curvature than the bottom portion, and the upper end of the straight cylindrical portion is flattened Ground formation.
根據上述發明,首先從氧化矽玻璃坩堝的內側或者外側沿著厚度方向射出位於氧化矽玻璃坩堝的上端部附近的半導體雷射或固體雷射等雷射。從而,射入氧化矽玻璃坩堝的雷射根據氧化矽玻璃坩堝的側壁部內部的厚度方向的層構造,進行透射或者部分散射。 According to the above invention, first, a laser such as a semiconductor laser or a solid laser which is located in the vicinity of the upper end portion of the yttrium oxide glass crucible is emitted from the inside or the outside of the yttrium-glass yttrium. Therefore, the laser beam incident on the yttrium oxide glass crucible is transmitted or partially scattered according to the layer structure in the thickness direction inside the side wall portion of the yttrium oxide glass crucible.
具體地,射入氧化矽玻璃坩堝的側壁部內部的雷射在光透射層中,在不散射或不反射的情況下進行透射。但是,雷射在光散射層進行散射。 Specifically, the laser that enters the inside of the side wall portion of the yttria glass crucible is transmitted through the light transmitting layer without scattering or reflection. However, the laser scatters in the light scattering layer.
利用例如拍攝裝置等來拍攝射入氧化矽玻璃坩堝內的雷射的散射狀況,測量氧化矽玻璃坩堝的厚度方向的各位置處的散射狀況。 The scattering state of the laser beam incident on the yttrium oxide glass crucible is photographed by, for example, an imaging device, and the scattering state at each position in the thickness direction of the yttrium oxide glass crucible is measured.
射入氧化矽玻璃坩堝的雷射根據該氧化矽玻璃坩堝的構造(透明層、含氣泡層、或有無缺陷等),而引起透射或部分散射等各種散射狀況。因此,通過拍攝氧化矽玻璃坩堝的端面,能夠獲取與氧化矽玻璃坩堝的厚度方向的層構造對應的圖像數據。通過解析該圖像數據,能夠連續地測量氧化矽玻璃坩堝的厚度方向的層構造,能夠非破壞性地並簡便地測量氧化矽玻璃坩堝的厚度方向的層構造。 The laser beam incident on the yttrium oxide glass crucible causes various scattering conditions such as transmission or partial scattering depending on the structure (transparent layer, bubble-containing layer, or presence or absence of defects) of the yttrium oxide glass crucible. Therefore, by photographing the end faces of the yttrium oxide glass crucible, it is possible to acquire image data corresponding to the layer structure in the thickness direction of the yttrium oxide glass crucible. By analyzing the image data, the layer structure in the thickness direction of the cerium oxide glass crucible can be continuously measured, and the layer structure in the thickness direction of the cerium oxide glass crucible can be measured non-destructively and simply.
根據上述發明,射入氧化矽玻璃坩堝內的雷射即便是透明層如果存在裂紋等缺陷等就會被其散射,因此通過測量該雷射的散射,能夠檢測通過目測無法檢測出的透明層中的缺陷等。另外,能夠測量在氧化矽玻璃坩堝的最內表面側是否形成了進行單晶矽提拉時僅所需且足夠厚度的光透射層等。根據上述發明,能夠非破壞性地並容易地測量有無光透射層或光透射層的厚度等氧化矽玻璃坩堝的厚度方向的層構造。 According to the above invention, even if the transparent layer is scattered by a defect such as a crack, the laser beam incident on the iridium oxide glass crucible can be detected by measuring the scattering of the laser light, and the transparent layer which cannot be detected by visual inspection can be detected. Defects, etc. In addition, it is possible to measure whether or not a light transmitting layer or the like which is only required and has a sufficient thickness for performing single crystal pulling is formed on the innermost surface side of the yttrium oxide glass crucible. According to the above invention, it is possible to non-destructively and easily measure the layer structure in the thickness direction of the bismuth oxide glass crucible such as the thickness of the light transmitting layer or the light transmitting layer.
在氧化矽玻璃坩堝的內表面側形成厚度較薄的光透射層或者光散射層的情況下,當製造單晶矽時,該光透射層的熔化等會使得含氣泡層或含有裂紋等缺陷的光散射層被暴露在矽溶液中。氧化矽玻璃坩堝的光散射層所含的氣泡或裂紋等缺陷所導致的凹凸部分出現在矽溶液與氧化矽玻璃坩堝 的接觸面,在該接觸面集中地產生所謂的棕環。因此,有時提拉後的單晶矽會出現結晶缺陷等問題。因此,優選在氧化矽玻璃坩堝的內表面側形成有某程度的厚度的光透射層,其重要之處在於測量氧化矽玻璃坩堝的厚度方向的層構造。 In the case where a thin light transmissive layer or a light scattering layer is formed on the inner surface side of the yttrium oxide glass crucible, when a single crystal germanium is produced, melting or the like of the light transmissive layer may cause a bubble containing layer or a defect such as a crack. The light scattering layer is exposed to the ruthenium solution. The uneven portion caused by defects such as bubbles or cracks in the light-scattering layer of the yttrium oxide glass yttrium appears in the cerium solution and the cerium oxide glass crucible The contact surface on which the so-called brown ring is concentrated. Therefore, there is a problem that crystal defects or the like may occur in the single crystal germanium after pulling. Therefore, it is preferable to form a light transmitting layer having a certain thickness on the inner surface side of the yttrium oxide glass crucible, and it is important to measure the layer structure in the thickness direction of the yttrium oxide glass crucible.
並且,根據上述發明,如果在光散射層中存在層構造,則射入的雷射被散射,產生反映了層狀構造的散射光,因此通過測量散射光就能夠知曉該層構造。例如,如果雷射的散射光強度在某個範圍內是均勻的,則可知光散射層在坩堝的厚度方向由單層構成。 Further, according to the above invention, if the layer structure exists in the light scattering layer, the incident laser beam is scattered and the scattered light reflecting the layered structure is generated. Therefore, the layer structure can be known by measuring the scattered light. For example, if the scattered light intensity of the laser is uniform within a certain range, it is understood that the light scattering layer is composed of a single layer in the thickness direction of the crucible.
在含氣泡層包括多個層的情況下,由於各層的熱膨脹率的不同等,氧化矽玻璃坩堝的強度等有可能會產生問題。因此,通過將含氣泡層設為單一層,能夠降低由於熱膨脹率的不同等而引起的氧化矽玻璃坩堝發生破損的可能性。為了降低由於熱膨脹率的不同等而引起的氧化矽玻璃坩堝的破損,優選含氣泡層中不含有多層構造。即,如上述那樣,通過測量光散射層或含氣泡層的層構造,能夠判別由於熱膨脹率的不同等而導致的破損可能性低的氧化矽玻璃坩堝。 In the case where the bubble-containing layer includes a plurality of layers, the strength of the cerium oxide glass crucible or the like may be problematic due to the difference in the thermal expansion rates of the respective layers. Therefore, by making the bubble-containing layer a single layer, it is possible to reduce the possibility of breakage of the cerium oxide glass crucible due to the difference in the coefficient of thermal expansion. In order to reduce breakage of the cerium oxide glass crucible due to the difference in thermal expansion coefficient, it is preferable that the bubble-containing layer does not have a multilayer structure. In other words, by measuring the layer structure of the light-scattering layer or the bubble-containing layer as described above, it is possible to determine the cerium oxide glass crucible having a low possibility of breakage due to the difference in the coefficient of thermal expansion or the like.
此外,根據上述發明,例如能夠測量光散射層的厚度和光透射層與光散射層之間的邊界的形狀等,能夠判別具有優選的光散射層的厚度的氧化矽玻璃坩堝和光透射層與光散射層之間的邊界的界面是優選形狀的氧化矽玻璃坩堝。 Further, according to the above invention, for example, the thickness of the light-scattering layer and the shape of the boundary between the light-transmitting layer and the light-scattering layer can be measured, and it is possible to discriminate between the yttrium-doped yttrium glass yttrium and the light-transmitting layer having the thickness of the preferred light-scattering layer and light scattering. The interface of the boundaries between the layers is a preferred shape of yttrium oxide glass crucible.
在結晶提拉的程序中,矽溶液界面被調整到相對於矽提拉裝置的加熱器處於相同的位置,隨著結晶提拉的進行,坩堝被控制成向上方移動。從而,在單晶矽提拉中,單晶矽的生長部分即矽溶液變成單晶矽的溶液與結晶之間的邊界部分的溫度處於矽的融點,為了使該邊界部分穩定化,需要非常精細的溫度控制。 In the process of crystal pulling, the 矽 solution interface is adjusted to be in the same position relative to the heater of the 矽 pulling device, and as the crystallization pull progresses, the 坩埚 is controlled to move upward. Therefore, in the single crystal crucible pulling, the temperature at the boundary portion between the growth portion of the single crystal germanium, that is, the solution in which the germanium solution becomes a single crystal germanium, and the crystal is at the melting point of the crucible, and in order to stabilize the boundary portion, it is necessary to Fine temperature control.
假如在氧化矽玻璃坩堝僅由透明層構成的情況下,當利用加熱器來加熱氧化矽玻璃坩堝內的矽溶液時,來自加熱器的輻射熱會透過氧化矽玻璃坩堝而直接傳導到矽溶液界面,因此存在難以進行溫度控制的情況。在單晶矽提拉時為了進行適當的溫度控制,優選在透明層的外側設置含氣泡 層,並且該含氣泡層具有適當厚度。因此,通過測量光散射層的厚度,能夠判別可以容易地進行適當的溫度控制的氧化矽玻璃坩堝。 In the case where the yttrium oxide glass crucible is composed only of a transparent layer, when a heater is used to heat the ruthenium solution in the yttrium oxide glass crucible, the radiant heat from the heater is directly transmitted to the ruthenium solution interface through the ruthenium oxide ruthenium. Therefore, there is a case where temperature control is difficult. In order to perform appropriate temperature control during the pulling of the single crystal crucible, it is preferred to provide bubbles on the outer side of the transparent layer. a layer, and the bubble-containing layer has a suitable thickness. Therefore, by measuring the thickness of the light-scattering layer, it is possible to discriminate the cerium oxide glass crucible which can easily perform appropriate temperature control.
另外根據上述發明,因為射入氧化矽玻璃坩堝內的雷射在形成於氧化矽玻璃坩堝厚度方向上的界面處發生散射,所以通過測量該雷射的散射,能夠測量該界面。例如,當對氧化矽玻璃坩堝射入雷射時,在多個點觀察到該雷射的散射光的情況下,可知在該氧化矽玻璃坩堝形成有多個界面。 Further, according to the above invention, since the laser incident into the yttrium oxide glass crucible is scattered at the interface formed in the thickness direction of the yttrium oxide glass crucible, the interface can be measured by measuring the scattering of the laser. For example, when a laser beam is incident on a cerium oxide glass crucible, when the scattered light of the laser is observed at a plurality of points, it is understood that a plurality of interfaces are formed in the yttrium oxide glass crucible.
一般地,氧化矽玻璃坩堝在同一層內氧化矽網路構造處於相同狀態。因此,一旦產生裂痕,該裂痕不會在途中停止而是會在層內擴大,有時會使氧化矽玻璃坩堝發生裂縫。另一方面,如果在厚度方向存在界面,則各層內的氧化矽網路構造是不同的,所以裂痕在該界面部分停止擴大,能夠防止由於裂痕的擴大而導致氧化矽玻璃坩堝產生裂縫。 Generally, the yttria glass crucible is in the same state in the same layer. Therefore, once a crack is generated, the crack does not stop on the way but expands in the layer, sometimes causing cracks in the cerium oxide glass crucible. On the other hand, if there is an interface in the thickness direction, the yttrium oxide network structure in each layer is different, so that the crack stops expanding at the interface portion, and it is possible to prevent cracking of the cerium oxide glass crucible due to the expansion of the crack.
例如,通過對氧化矽玻璃坩堝在假想溫度以上的溫度進行退火處理,能夠形成優選的層構造。因此,通過上述發明甄別氧化矽玻璃坩堝,進行退火處理,由此能夠製造難以裂縫的坩堝。 For example, a preferred layer structure can be formed by annealing the yttrium oxide glass crucible at a temperature equal to or higher than the fictive temperature. Therefore, by arranging the bismuth oxide glass crucible by the above-described invention and performing an annealing treatment, it is possible to produce a crucible which is difficult to crack.
從氧化矽玻璃坩堝的端面方向對該氧化矽玻璃坩堝的厚度方向的各位置射出雷射,測量與該射出的雷射對應地產生的拉曼散射,由此能夠把握氧化矽玻璃坩堝的厚度方向的層構造。即,作為上述程序的替代,也可以構成為測量與射入的雷射對應地產生的拉曼散射。 Laser is emitted from each end position in the thickness direction of the bismuth oxide glass crucible from the end surface direction of the bismuth oxide glass crucible, and Raman scattering generated in accordance with the emitted laser beam is measured, whereby the thickness direction of the bismuth oxide glass crucible can be grasped. Layer structure. That is, instead of the above-described program, Raman scattering generated in accordance with the incident laser beam may be measured.
另外,上述坩堝測量裝置也可以是,所述光射出部構成為從氧化矽玻璃坩堝的內側朝向該氧化矽玻璃坩堝的厚度方向射出所述雷射,所述散射狀況測量部構成為從作為測量對象的氧化矽玻璃坩堝中被所述光射出部射入雷射的部分的上端開口部周邊的圓環狀端面方向,測量雷射在氧化矽玻璃坩堝的側壁部內部的厚度方向的散射狀況。 Further, in the above-described enthalpy measuring device, the light emitting portion may be configured to emit the laser beam from the inner side of the yttrium-glass lanthanum toward the thickness direction of the yttrium-glass ytterbium, and the scattering state measuring unit is configured to be measured from In the iridium oxide glass crucible of the target, the light emitting portion is incident on the annular end surface in the vicinity of the upper end opening portion of the portion of the laser beam, and the scattering state of the laser beam in the thickness direction inside the side wall portion of the yttrium oxide glass crucible is measured.
另外,上述坩堝測量方法的發明也可以構成為,從氧化矽玻璃坩堝的內側向外側沿著該氧化矽玻璃坩堝的厚度方向射出雷射,從氧化矽玻璃坩堝的雷射所射入的上端開口部周邊的圓環狀端面方向,測量雷射沿著氧化矽玻璃坩堝的側壁部內部的厚度方向的各位置處的散射光的狀況。 Further, the invention of the above-described ruthenium measurement method may be configured such that a laser beam is emitted from the inside to the outside of the yttrium oxide glass crucible in the thickness direction of the yttrium oxide glass crucible, and an upper end opening is incident from the laser beam of the bismuth oxide glass crucible. In the direction of the annular end surface around the portion, the state of the scattered light at various positions in the thickness direction of the inside of the side wall portion of the yttrium glass yttrium was measured.
在本結構中,作為測量氧化矽玻璃坩堝的程序,從坩堝內側向該氧化矽玻璃坩堝的厚度方向,在自然冷卻的氧化矽玻璃坩堝的內側設置雷射光源以射出雷射。 In the present configuration, as a procedure for measuring the cerium oxide glass crucible, a laser light source is disposed inside the naturally cooled cerium oxide glass crucible from the inner side of the crucible to the thickness direction of the cerium oxide glass crucible to emit the laser.
本發明也可以構成為,例如從該氧化矽玻璃坩堝的上端開口部周邊的圓環狀端面方向,利用拍攝裝置等來拍攝射入氧化矽玻璃坩堝內的雷射的散射狀況。雷射從氧化矽玻璃坩堝的內側朝向外側射入,從而氧化矽玻璃坩堝產生各種散射狀況。因此,如果從氧化矽玻璃坩堝的端面方向拍攝射入氧化矽玻璃坩堝內的雷射的散射狀況,則能夠獲取與氧化矽玻璃坩堝的厚度方向的層構造對應的圖像數據。通過解析該圖像數據,能夠非破壞性地並容易地測量氧化矽玻璃坩堝的厚度方向的層構造,能夠判別具有期望品質的氧化矽玻璃坩堝。 In the present invention, for example, the scattering state of the laser beam incident on the yttrium oxide glass crucible may be imaged by an imaging device or the like from the direction of the annular end surface around the upper end opening of the yttrium oxide glass crucible. The laser is incident from the inside to the outside of the yttrium oxide glass crucible, thereby oxidizing the bismuth glass crucible to produce various scattering conditions. Therefore, when the scattering state of the laser beam incident into the yttrium oxide glass crucible is taken from the end face direction of the yttrium oxide glass crucible, image data corresponding to the layer structure in the thickness direction of the yttrium oxide glass crucible can be obtained. By analyzing the image data, the layer structure in the thickness direction of the cerium oxide glass crucible can be measured non-destructively and easily, and the cerium oxide glass crucible having a desired quality can be discriminated.
從氧化矽玻璃坩堝的內側朝向氧化矽玻璃坩堝的厚度方向射出雷射,從端面方向測量雷射在氧化矽玻璃坩堝的側壁部內部的散射狀況,由此除了氧化矽玻璃坩堝的厚度方向的層構造之外,還能夠非破壞性地並容易地判別該層構造中存在的通過目測無法確認的缺陷。另外,還能夠非破壞性地並容易地測量光透射層的厚度等。 The laser beam is emitted from the inner side of the yttrium glass yttrium toward the thickness direction of the yttrium glass yttrium, and the scattering state of the laser inside the side wall portion of the yttrium glass yttrium is measured from the end surface direction, thereby removing the layer in the thickness direction of the yttrium glass yttrium. In addition to the structure, it is also possible to non-destructively and easily discriminate defects existing in the layer structure that cannot be confirmed by visual inspection. In addition, it is also possible to measure the thickness and the like of the light transmitting layer non-destructively and easily.
另外,上述坩堝測量裝置也可以構成為具有照明部,其將與所述光射出部射出的雷射的波長對應的規定波長的光照射到氧化矽玻璃坩堝,所述散射狀況測量部在所述照明部的光照射下測量所述雷射的散射狀況。 Further, the flaw measuring device may be configured to include an illumination unit that irradiates light of a predetermined wavelength corresponding to a wavelength of a laser beam emitted from the light emitting portion to a yttrium oxide glass crucible, and the scattering state measuring unit is configured to The scattering condition of the laser is measured by light illumination of the illumination unit.
另外,本發明也可以構成為,在測量雷射的散射狀況的程序中,將與射出的雷射的波長對應的規定波長的照明光照射到氧化矽玻璃坩堝,在所述照明光的照射下測量雷射的散射狀況。 Further, in the present invention, in the program for measuring the scattering state of the laser, illumination light of a predetermined wavelength corresponding to the wavelength of the emitted laser light may be irradiated to the yttrium oxide glass crucible, and the illumination light is irradiated. Measure the scattering of the laser.
根據本結構,例如當對氧化矽玻璃坩堝射出紅色雷射時,照射藍色照明光。該情況下,色相與雷射顏色接近的橙色照明等會使得雷射的散射變得不醒目而最好避開。 According to the present structure, for example, when a red laser is emitted to the yttria glass, the blue illumination light is irradiated. In this case, an orange illumination or the like in which the hue is close to the color of the laser causes the scattering of the laser to be unobtrusive and is preferably avoided.
這樣,通過測量在根據雷射的波長而調整的照明光下雷射的散射狀 況,能夠更明確地測量該雷射的散射狀況。從而,能夠高精度地測量氧化矽玻璃坩堝的厚度方向的層構造,能夠非破壞性地並容易地判別具有期望厚度方向的層構造的氧化矽玻璃坩堝。 In this way, by measuring the scattering of the laser under the illumination light adjusted according to the wavelength of the laser Moreover, the scattering condition of the laser can be measured more clearly. Therefore, the layer structure in the thickness direction of the cerium oxide glass crucible can be measured with high precision, and the cerium oxide glass crucible having a layer structure having a desired thickness direction can be discriminated non-destructively and easily.
另外,上述坩堝測量裝置也可以構成為,所述光射出部射出水平雷射作為所述雷射。 Further, the flaw measuring device may be configured such that the light emitting portion emits a horizontal laser as the laser.
本發明也可以構成為,具有對氧化矽玻璃坩堝射出水平雷射,測量射入的水平雷射在氧化矽玻璃坩堝的厚度方向的各位置處的散射狀況的程序。 The present invention may be configured to have a program for emitting a horizontal laser to the yttrium oxide glass crucible and measuring the scattering state of the incident horizontal laser at each position in the thickness direction of the yttrium oxide glass crucible.
一般地,水平雷射是指與地面成水平方向的線性雷射。根據本結構,對於氧化矽玻璃坩堝,將水平雷射射入氧化矽玻璃坩堝,以光學式拍攝裝置等拍攝與遍佈大範圍的氧化矽玻璃坩堝的構造對應的各種雷射的散射狀況,能夠獲取其圖像數據。 Generally, a horizontal laser refers to a linear laser that is horizontal to the ground. According to this configuration, in the case of the yttrium oxide glass crucible, a horizontal laser beam is incident on the yttrium oxide glass crucible, and a scattering condition of various lasers corresponding to a structure including a cerium oxide glass crucible spread over a wide range can be obtained by an optical imaging device or the like. Its image data.
通過這樣的結構,對於上述那樣的水平方向的雷射射入的大範圍的氧化矽玻璃坩堝的厚度方向的層構造,能夠一次性且高效地測量氧化矽玻璃坩堝的厚度方向的層構造。 With such a configuration, the layer structure in the thickness direction of the bismuth oxide glass crucible can be measured at one time and efficiently for the layer structure in the thickness direction of the large-sized yttrium-glass yttrium into which the above-described horizontal laser is incident.
通過在旋轉的碳製模具中堆積氧化矽粉,對堆積的氧化矽粉層進行電弧熔融,來製造氧化矽玻璃坩堝。因此,透明層或含氣泡層的層構造相對於坩堝的中心軸對稱。另一方面,因為氧化矽粉的堆積,所以在氧化矽玻璃坩堝的高度方向觀察不到層構造的對稱性。因此,為了把握氧化矽玻璃坩堝的特性,更重要之處在于知曉高度方向的層構造的分佈。 The cerium oxide glass layer is produced by depositing cerium oxide powder in a rotating carbon mold to arc-melt the deposited cerium oxide powder layer. Therefore, the layer structure of the transparent layer or the bubble-containing layer is symmetrical with respect to the central axis of the crucible. On the other hand, since the cerium oxide powder was deposited, the symmetry of the layer structure was not observed in the height direction of the cerium oxide glass crucible. Therefore, in order to grasp the characteristics of the yttrium oxide yttrium glass, it is more important to know the distribution of the layer structure in the height direction.
在此,如果使用垂直雷射作為射入雷射,能夠詳細地知曉坩堝高度方向的層構造以及含氣泡層內的層構造等。垂直雷射是指垂直方向的線性雷射(例如,使水平雷射傾斜90度後的雷射)。並且,通過使用交叉線性雷射,還能夠同時具有水平雷射和垂直雷射的優點。 Here, if a vertical laser is used as the incident laser, the layer structure in the height direction of the crucible and the layer structure in the bubble containing layer and the like can be known in detail. Vertical laser refers to a linear laser in the vertical direction (for example, a laser that tilts a horizontal laser by 90 degrees). Also, by using a cross-linear laser, it is also possible to have both the advantages of horizontal laser and vertical laser.
另外,通過使雷射沿著傾斜方向(朝向氧化矽玻璃坩堝的深度方向傾斜的方向。角度可以任意)射出,例如還能夠判別缺陷在多深的深度存在。 Further, by causing the laser to be emitted in an oblique direction (a direction oblique to the depth direction of the bismuth glass crucible, the angle can be arbitrarily), for example, it is possible to determine how deep the defect exists.
這樣,本發明能夠利用各種雷射。 Thus, the present invention is capable of utilizing various lasers.
另外,上述坩堝測量裝置採用如下結構,所述光射出部構成為,從氧化矽玻璃坩堝的端面方向,向該氧化矽玻璃坩堝的厚度方向的各位置射出雷射,所述散射狀況測量部在所述各位置測量與所述光射出部射出的雷射對應地產生的拉曼散射,作為所述雷射的散射狀況。 Further, the above-described enthalpy measuring device is configured such that the light emitting portion is configured to emit a laser from each end position in the thickness direction of the yttrium oxide glass crucible from the end surface direction of the yttrium oxide glass crucible, and the scattering state measuring portion is The respective positions measure Raman scattering generated in accordance with the laser beam emitted from the light emitting portion as a scattering state of the laser.
另外,本發明也可以構成為,從氧化矽玻璃坩堝的端面方向向該氧化矽玻璃坩堝的厚度方向的各位置射出雷射,在所述各位置測量根據所述射出的雷射而產生的拉曼散射,作為所述雷射的散射狀態。 Further, in the present invention, the laser beam may be emitted from each of the positions in the thickness direction of the yttrium oxide glass crucible from the end surface direction of the yttrium oxide glass crucible, and the pull generated by the emitted laser beam may be measured at each of the positions. Man scattering, as the scattering state of the laser.
根據本結構,例如使來自氧化矽玻璃坩堝的散射光,經過瑞利光除去濾波器來除去瑞利光,在此基礎上,通過衍射光柵等分光器來進行分光,利用檢測器等來進行檢測。之後,利用信息處理裝置等將其變換成拉曼位移並加以顯示。 According to this configuration, for example, the Rayleigh light removing filter is used to remove the Rayleigh light by the Rayleigh light removing filter, and the light is split by a spectroscope such as a diffraction grating, and detected by a detector or the like. Thereafter, it is converted into a Raman shift by an information processing device or the like and displayed.
一般地知曉,在對氧化矽玻璃進行拉曼測量的情況下,能夠測量歸屬於平面四元環的峰值和歸屬於平面三元環的峰值等多個峰值。然而,在氧化矽玻璃坩堝的厚度方向包括多個層構造的情況下,因為在各層氧化矽網路構造是不同的,所以在厚度方向的各位置處拉曼位移的各峰值的波數值會產生偏差。因此,通過在氧化矽玻璃坩堝的厚度方向的各位置測量拉曼位移,能夠測量各層的層構造。 It is generally known that in the case of Raman measurement of yttria glass, it is possible to measure a plurality of peaks such as a peak attributed to a planar four-membered ring and a peak attributed to a planar three-membered ring. However, in the case where the thickness direction of the yttrium-glass lanthanum includes a plurality of layer structures, since the yttrium oxide network structure is different in each layer, the wave value of each peak of the Raman shift at each position in the thickness direction is generated. deviation. Therefore, the layer structure of each layer can be measured by measuring the Raman shift at each position in the thickness direction of the yttrium oxide glass crucible.
根據上述結構,即便看起來是透明層的部分,如果層構造不同,則能夠進行上述主旨的檢測。另外,即便含氣泡層具有多個層構造,也能夠進行上述主旨的檢測。其結果,能夠判別在單晶矽提拉時易於引起變形的氧化矽玻璃坩堝等。 According to the above configuration, even if it appears to be a portion of the transparent layer, if the layer structure is different, the above-described detection can be performed. Further, even if the bubble-containing layer has a plurality of layer structures, the above-described detection can be performed. As a result, it is possible to determine a cerium oxide glass crucible or the like which is likely to be deformed when the single crystal crucible is pulled up.
另外,在上述坩堝測量裝置中,所述光射出部構成為以預定的規定間隔遍佈氧化矽玻璃坩堝的全部周長地射出雷射,所述散射狀況測量部構成為分別測量與所述光射出部射出的雷射對應的所述雷射的散射狀況。 Further, in the above-described krypton measuring device, the light emitting portion is configured to emit laser light over a predetermined circumference of the entire bismuth oxide glass crucible, and the scattering state measuring portion is configured to measure and emit the light, respectively. The scattering condition of the laser corresponding to the laser emitted by the portion.
另外,本發明也可以構成為,以預定的規定間隔遍佈氧化矽玻璃坩堝的全部周長射出雷射,分別測量與射出的雷射對應的所述雷射的散射狀況。 Further, in the present invention, the laser may be emitted at a predetermined predetermined interval over the entire circumference of the bismuth oxide glass crucible, and the scattering state of the laser corresponding to the emitted laser beam may be measured.
例如,在從氧化矽玻璃坩堝的內側對氧化矽玻璃坩堝的厚度方向射出雷射的情況下,在射出雷射的狀態下,使雷射光源旋轉,由此能夠遍佈氧化矽玻璃坩堝的全部周長射入雷射。 For example, when a laser beam is emitted from the inside of the yttrium oxide glass crucible in the thickness direction of the yttrium oxide glass crucible, the laser light source is rotated in a state where the laser beam is emitted, thereby spreading the entire circumference of the bismuth oxide glass crucible. Long shot into the laser.
從而,通過使拍攝散射狀況的拍攝裝置與雷射光源的旋轉相配合地移動,能夠拍攝通過雷射光源的旋轉而遍佈氧化矽玻璃坩堝的全部周長地產生的雷射的散射狀況。 Therefore, by causing the imaging device that captures the scattering state to move in cooperation with the rotation of the laser light source, it is possible to capture the scattering state of the laser generated over the entire circumference of the yttrium-glass yttrium by the rotation of the laser light source.
根據本結構,能夠容易地測量氧化矽玻璃坩堝的全部周長在厚度方向的構造,能夠遍佈氧化矽玻璃坩堝的全部周長地判別無法檢測缺陷的氧化矽玻璃坩堝。 According to this configuration, it is possible to easily measure the structure in which the entire circumference of the yttrium oxide glass crucible is in the thickness direction, and it is possible to discriminate the yttrium oxide glass crucible in which the defect cannot be detected over the entire circumference of the yttrium oxide glass crucible.
下面,參照附圖詳細地說明本發明的優選實施方式。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
參照圖1至圖13說明本發明的第一實施方式的坩堝測量裝置、坩堝測量方法。圖是表示坩堝測量裝置的結構的一個示例的圖。圖2至圖4是表示從端面方向測量對氧化矽玻璃坩堝射入雷射時的狀態時的一個示例的圖。圖5是表示坩堝測量方法的流程的一個示例的流程圖。圖6至圖9是表示實際的測量圖像的一個示例的圖。圖10是表示圖6所示的氧化矽玻璃坩堝的內部殘留應力的圖。圖11是表示圖7所示的氧化矽玻璃坩堝的內部殘留應力的圖。圖12和圖13是表示使用了交叉線性雷射時的散射狀況的一個示例的圖。 A flaw measuring device and a weir measuring method according to a first embodiment of the present invention will be described with reference to Figs. 1 to 13 . The figure is a diagram showing an example of the structure of the helium measurement device. 2 to 4 are views showing an example of a state in which a state in which a cerium oxide glass crucible is incident on a laser is measured from the end surface direction. Fig. 5 is a flow chart showing an example of the flow of the 坩埚 measurement method. 6 to 9 are diagrams showing an example of an actual measurement image. Fig. 10 is a view showing internal residual stress of the yttria glass crucible shown in Fig. 6; Fig. 11 is a view showing internal residual stress of the yttria glass crucible shown in Fig. 7; 12 and 13 are diagrams showing an example of a scattering condition when a cross-linear laser is used.
在本實施方式中說明坩堝測量裝置,其對雷射在具有透明層和含氣泡層的氧化矽玻璃坩堝的側壁部內部在厚度方向的各位置處的散射狀況進行測量。另外,說明利用上述坩堝測量裝置進行的坩堝測量方法。本實施方式的坩堝測量裝置如後述那樣,構成為從氧化矽玻璃坩堝的內側朝向該氧 化矽玻璃坩堝的上端部附近的厚度方向射出雷射。從而,坩堝測量裝置通過從端面方向拍攝氧化矽玻璃坩堝,來測量在氧化矽玻璃坩堝的側壁部內部在厚度方向的各位置處的雷射散射狀況。由此,如後述那樣,能夠把握氧化矽玻璃坩堝的厚度方向的構造。即,通過使用在本實施方式中說明的坩堝測量裝置和坩堝測量方法,能夠測量光透射層(透明層且沒有裂紋等缺陷的區域)和光散射層(含氣泡層或透明層且存在裂紋等缺陷的區域)。其結果,能夠容易地發現在透明層中存在的裂紋等缺陷。另外,能夠測量光透射層和光散射層的厚度等。另外,如上述那樣,通過測量氧化矽玻璃坩堝的厚度方向的層構造,能夠實現在單晶矽提拉時問題產生可能性降低的氧化矽玻璃坩堝和難以產生裂縫的氧化矽玻璃坩堝。 In the present embodiment, a flaw measuring device that measures the scattering state of the laser at each position in the thickness direction inside the side wall portion of the yttria glass crucible having the transparent layer and the bubble-containing layer will be described. In addition, a method of measuring the flaw by the above-described helium measurement device will be described. The crucible measuring device according to the present embodiment is configured to face the oxygen from the inside of the yttrium oxide glass crucible as will be described later. The laser beam is emitted in the thickness direction near the upper end portion of the bismuth glass crucible. Therefore, the xenon measurement device measures the laser scattering state at each position in the thickness direction inside the side wall portion of the yttrium oxide glass crucible by photographing the yttrium oxide glass crucible from the end surface direction. Thereby, as described later, the structure in the thickness direction of the bismuth oxide glass crucible can be grasped. That is, by using the ruthenium measurement device and the ruthenium measurement method described in the present embodiment, it is possible to measure a light-transmitting layer (a region having a transparent layer without defects such as cracks) and a light-scattering layer (including a bubble layer or a transparent layer and having defects such as cracks) Area). As a result, defects such as cracks existing in the transparent layer can be easily found. In addition, the thickness and the like of the light transmitting layer and the light scattering layer can be measured. Further, as described above, by measuring the layer structure in the thickness direction of the cerium oxide glass crucible, it is possible to realize a cerium oxide glass crucible having a reduced possibility of occurrence of a problem in the pulling of the single crystal crucible, and a cerium oxide glass crucible which is less likely to cause cracks.
眼睛、光電二極體或光電子倍增管等光檢測器如果沒有進入光就無法感知到光,例如即便從與光的行進方向垂直的方向對可見區域波長的雷射進行目測,也無法看到光。但是該情況下,如果空氣中的塵埃或顆粒等的反射/折射導致雷射被散射,則通過該散射會使得光進入眼睛等而看到雷射。 A photodetector such as an eye, a photodiode, or a photomultiplier can not perceive light if it does not enter the light. For example, even if the laser of the visible region wavelength is visually observed from a direction perpendicular to the direction of travel of the light, the light cannot be seen. . However, in this case, if the reflection/refraction of dust or particles in the air causes the laser to be scattered, the light is allowed to enter the eye or the like by the scattering to see the laser.
與在空氣中同樣,可見區域波長的雷射即便是在氧化矽玻璃中也幾乎不散射,因此從與光的行進方向垂直的方向無法看到。如果雷射的光子與構成氧化矽玻璃的原子相互作用,則會激發該原子所形成的電偶極子的振動,從其釋放出光子。釋放出的光子成為二次波。 As in the air, the laser of the visible region wavelength hardly scatters even in the yttria glass, and thus is not visible from the direction perpendicular to the traveling direction of the light. If the photon of the laser interacts with the atoms that make up the yttrium oxide glass, it will excite the vibration of the electric dipole formed by the atom and release the photons therefrom. The released photons become secondary waves.
在大量的原子零星且隨機分佈的情況下,如果在任意方向觀測這些二次波,其強度變成來自各原子的二次波的強度之和,一般不會為0。這就是光散射的情況。與此相對,當構成氧化矽玻璃的原子較密且其密度均勻時,來自各原子的二次波相互干涉,在特定方向以外的方向其強度為0。根據干涉結果不會消失的二次波成為反射波或者折射波。 In the case where a large number of atoms are scattered and randomly distributed, if these secondary waves are observed in any direction, the intensity becomes the sum of the intensities of the secondary waves from the respective atoms, and generally does not become zero. This is the case of light scattering. On the other hand, when the atoms constituting the yttria glass are dense and the density is uniform, the secondary waves from the respective atoms interfere with each other, and the intensity is zero in a direction other than the specific direction. The secondary wave that does not disappear according to the interference result becomes a reflected wave or a refracted wave.
光散射一般地是由於物質不均勻而引起的,如果不均勻的氧化矽玻璃中的空隙、氣泡或缺陷等的存在而導致雷射發生散射,則光會被看到。因此根據雷射的散射,能夠知曉空隙、氣泡、缺陷以及層的邊界等的存在。 Light scattering is generally caused by material non-uniformity, and if the laser is scattered due to the presence of voids, bubbles or defects in the uneven yttria glass, the light is seen. Therefore, it is possible to know the existence of voids, bubbles, defects, and boundary of layers, etc., depending on the scattering of the laser.
本實施方式中作為測量物件的氧化矽玻璃坩堝具有如下形狀,該形狀包括:在上端具有開口部的圓筒狀的側壁部(直筒部);彎曲的底部;以及 連結側壁部和底部且與底部相比曲率較大的角部。另外,氧化矽玻璃坩堝的側壁部的上端面形成為圓環狀的平坦面。本實施方式的氧化矽玻璃坩堝例如通過旋轉模具法來製造,其中,該旋轉模具法是通過在旋轉的(碳製的)模具中堆積氧化矽粉,對堆積的氧化矽粉層進行電弧熔融,由此來製造氧化矽玻璃坩堝的方法。另外,氧化矽玻璃坩堝的開口端部附近的形狀易於變得不整齊,因此將旋轉模具法製造出的氧化矽玻璃坩堝的開口端部切斷成規定寬度,來使開口端部的形狀變得整齊。 The cerium oxide glass crucible as the measuring object in the present embodiment has a shape including a cylindrical side wall portion (straight cylindrical portion) having an opening at the upper end; a curved bottom portion; A corner portion that joins the side wall portion and the bottom portion and has a larger curvature than the bottom portion. Further, the upper end surface of the side wall portion of the yttria glass crucible is formed into an annular flat surface. The cerium oxide glass crucible of the present embodiment is produced, for example, by a rotary die method in which a cerium oxide powder layer is arc-melted by depositing cerium oxide powder in a rotating (carbon) mold. Thus, a method of producing a bismuth oxide glass crucible is produced. In addition, since the shape of the vicinity of the opening end portion of the yttrium oxide glass crucible is likely to be irregular, the opening end portion of the yttrium oxide glass crucible manufactured by the rotary die method is cut into a predetermined width, and the shape of the opening end portion is changed. neat.
圖1是本發明的第一實施方式涉及的坩堝測量裝置的結構的一個示例。該坩堝測量裝置具有:雷射光源2(光射出部),其對氧化矽玻璃坩堝1射出雷射;以及拍攝裝置部3(散射狀況測量部),其從氧化矽玻璃坩堝1的端面方向拍攝射入雷射在氧化矽玻璃坩堝1內的散射狀態。 FIG. 1 is an example of a configuration of a flaw measuring device according to a first embodiment of the present invention. The flaw measuring device includes a laser light source 2 (light emitting portion) that emits a laser beam to the beryllium oxide glass crucible 1 and an imaging device portion 3 (scattering state measuring portion) that photographs from the end surface of the beryllium oxide glass crucible 1 The scattering state of the incident laser in the yttrium oxide glass crucible 1.
雷射光源2例如是固體雷射光源或半導體雷射光源等,配置成對氧化矽玻璃坩堝1的厚度方向射入雷射。作為雷射光源2的示例,能夠列舉出AlGaInP(磷化鋁鎵銦)式可移動型雷射光源(輸出波長為630nm附近)等。另外,光照射部除了雷射光源之外,還能夠使用反射鏡或雷射傳送用光纖。 The laser light source 2 is, for example, a solid laser light source or a semiconductor laser light source, and is disposed to inject a laser into the thickness direction of the yttrium glass crucible 1. Examples of the laser light source 2 include an AlGaInP (aluminum gallium phosphide) type movable laser light source (output wavelength is around 630 nm). Further, in addition to the laser light source, the light irradiation unit can use a mirror or a laser beam for laser transmission.
如圖1所示,本實施方式的雷射光源2設置在氧化矽玻璃坩堝1的內部,以從氧化矽玻璃坩堝1的內部,朝向該氧化矽玻璃坩堝1的厚度方向射出雷射。通過這樣地設置雷射光源2,從該氧化矽玻璃坩堝1的內側朝向外側,對氧化矽玻璃坩堝1射入雷射。 As shown in FIG. 1, the laser light source 2 of this embodiment is provided in the inside of the beryllium-tantalum glass crucible 1, and the laser beam is emitted from the inside of the beryllium-glass crucible 1 toward the thickness direction of the beryllium-glass crucible 1. By providing the laser light source 2 in this manner, a laser beam is incident on the yttria glass crucible 1 from the inside toward the outside of the bismuth oxide glass crucible 1.
另外,雷射光源2朝向氧化矽玻璃坩堝1的厚度方向射出雷射即可,不僅可以設置成與氧化矽玻璃坩堝1的側壁的法線方向垂直,還可以設置成朝向傾斜方向射出雷射。另外,優選雷射光源2設置成在氧化矽玻璃坩堝1的端面附近(例如,氧化矽玻璃坩堝的從端面到2cm深度等的上端部附近)射入並透射雷射。 Further, the laser light source 2 may emit laser light in the thickness direction of the beryllium glass crucible 1, and may be provided not only to be perpendicular to the normal direction of the side wall of the beryllium oxide glass crucible 1, but also to emit laser light in an oblique direction. Further, it is preferable that the laser light source 2 is disposed to enter and transmit the laser light in the vicinity of the end surface of the yttrium-glass iridium 1 (for example, in the vicinity of the upper end portion of the yttrium-glass yttrium from the end surface to a depth of 2 cm or the like).
雷射光源2射出的雷射在例如空氣中通過後射入氧化矽玻璃坩堝1,根據氧化矽玻璃坩堝1的構造而進行透射或者部分散射,由此在厚度方向的各位置處表示各種散射狀況。 The laser light emitted from the laser light source 2 passes through the yttrium oxide glass crucible 1 after passing through, for example, air, and is transmitted or partially scattered according to the structure of the yttrium oxide glass crucible 1, thereby indicating various scattering states at various positions in the thickness direction. .
氧化矽玻璃是非晶體,因此基本上不存在成為光散射原因的晶界。另外,在波長約為400nm~800nm的範圍的可見波段,人類的眼睛觀察可以透明地看到氧化矽玻璃。氧化矽玻璃在可見波段透明是指該波長區域的光不被吸收或不被散射。這是因為,根據氧化矽玻璃的能隙,波長為大約400nm以下的光產生光吸收,但是波長超過該波長的光不會被吸收,另外通過氧化矽玻璃的自由電子的等離子的振動,波長為大約780nm以上的光產生光散射,因此波長小於該波長的光不會被散射。一般地,氧化矽玻璃的光透射率相對較高的波長域根據其製法或原料等的不同而不同,但是大體上是200nm~4000nm左右。 Since yttria glass is amorphous, there is substantially no grain boundary which is a cause of light scattering. In addition, in the visible wavelength range of the wavelength of about 400 nm to 800 nm, the human eye observation can transparently see the yttrium oxide glass. Transparent yttria glass in the visible band means that light in this wavelength region is not absorbed or scattered. This is because, according to the energy gap of the yttria glass, light having a wavelength of about 400 nm or less generates light absorption, but light having a wavelength exceeding the wavelength is not absorbed, and the vibration of the free electron of the yttria glass is irradiated at a wavelength of Light above about 780 nm produces light scattering, so light having a wavelength less than this wavelength is not scattered. Generally, the wavelength range in which the light transmittance of cerium oxide glass is relatively high differs depending on the production method, the raw material, and the like, but is generally about 200 nm to 4000 nm.
因此,在氧化矽玻璃坩堝1的透明層且不存在裂紋等缺陷的區域,雷射光源2(射出630nm的雷射)射出的雷射不被吸收或者散射,而進行透射(直行)。 Therefore, in a region where the transparent layer of the yttrium glass yttrium oxide 1 is free from defects such as cracks, the laser light emitted from the laser light source 2 (a laser emitting 630 nm) is not absorbed or scattered, and is transmitted (straight).
另一方面,在氧化矽玻璃坩堝1的含氣泡層中,在氣泡與氧化矽玻璃之間的邊界等處,雷射會被散射。因此,如果雷射光源2射出的雷射射入含氣泡層,則雷射的一部分會被散射。另外,即便在目測判斷為透明(為透明層)的區域,在該區域存在裂紋等缺陷的情況下,雷射的一部分在該缺陷處也會被散射。 On the other hand, in the bubble-containing layer of the yttria glass crucible 1, the laser is scattered at the boundary between the bubble and the yttria glass. Therefore, if the laser light emitted from the laser light source 2 is incident on the bubble containing layer, a part of the laser light is scattered. Further, even in a region where it is visually judged to be transparent (is a transparent layer), when there is a defect such as a crack in the region, a part of the laser is scattered at the defect.
氧化矽玻璃存在與紫外線或紅外線相互作用的性質,因此作為雷射光源2,優選射出可見光的雷射(約400nm~800nm的範圍)。作為在本實施方式中利用的雷射光源2,例如能夠利用紅色波長的雷射(例如,約635nm、約650nm)、綠色波長的雷射(例如,約532nm)、藍色波長的雷射(例如,約410nm)等。另外,在本實施方式中,作為雷射光源2,也可以利用深紫外光雷射(例如,230nm~350nm等)等除了可見光以外的其他雷射。 Since cerium oxide glass has a property of interacting with ultraviolet rays or infrared rays, it is preferable that the laser light source 2 emits a laser beam of visible light (a range of about 400 nm to 800 nm). As the laser light source 2 used in the present embodiment, for example, a laser of a red wavelength (for example, about 635 nm, about 650 nm), a laser of a green wavelength (for example, about 532 nm), or a laser of a blue wavelength can be used ( For example, about 410 nm) and the like. Further, in the present embodiment, as the laser light source 2, a laser other than visible light such as a deep ultraviolet laser (for example, 230 nm to 350 nm) may be used.
前述的氧化矽玻璃與紅外區域光的相互作用根據構成玻璃的離子間的振動的激發而發生。因為構成玻璃的離子來自於氧化矽玻璃中的雜質,所以雜質越少光的吸收就越少。另外,光的吸收特性根據玻璃製造時的狀態的氧化矽網路構造的不同而發生變化。另一方面,氧化矽玻璃與紫外區域光的相互作用由於電子激發而引起,因此與紅外區域光的相互作用不同。電子激發依賴於氧化矽玻璃的價電子帶和傳導帶的帶隙,通過導入鹼性金 屬等雜質,使得帶隙較小,從而吸收端有時會擴展到可見區域。 The aforementioned interaction between the yttria glass and the infrared region light occurs in accordance with the excitation of the vibration between the ions constituting the glass. Since the ions constituting the glass are derived from impurities in the yttrium oxide glass, the less the impurities, the less the absorption of light. Further, the absorption characteristics of light vary depending on the structure of the yttria network in the state at the time of glass production. On the other hand, the interaction of yttrium oxide glass with ultraviolet region light is caused by electron excitation, and thus the interaction with the infrared region light is different. Electron excitation depends on the valence band of the yttrium oxide glass and the band gap of the conduction band, by introducing alkaline gold It is an impurity such that the band gap is small, and the absorption end sometimes spreads to the visible region.
在本實施方式中,例如利用雷射光源2,以距離3m來測量,其雷射直徑是5nm~20mm左右、輸出是大約0.2mw~500mw左右。另外,雷射光源2的射出口徑例如是大約0.8mm~5.5mm左右。另外,雷射光源2的雷射直徑、輸出或射出口徑也可以是上述例示的值以外的其他值。 In the present embodiment, for example, the laser light source 2 is measured at a distance of 3 m, and the laser diameter is about 5 nm to 20 mm, and the output is about 0.2 mW to 500 mW. Further, the exit diameter of the laser light source 2 is, for example, about 0.8 mm to 5.5 mm. Further, the laser diameter, output, or exit diameter of the laser light source 2 may be other values than the values exemplified above.
拍攝裝置部3是一般的拍攝裝置,具有:未圖示的CCD(Charge Coupled Device,電荷耦合元件)圖像感測器、CMOS(Complementary Metal Oxide Semiconductor,金屬氧化物半導體)圖像感測器等拍攝元件;以及透鏡部等。本實施方式的拍攝裝置部3構成為,設置在能夠拍攝作為測量物件的氧化矽玻璃坩堝1的端面位置(即,端面方向),從被射入雷射的部分的上端開口部周邊的圓環狀端面方向,測量通過雷射光源2射入氧化矽玻璃坩堝1內的雷射在氧化矽玻璃坩堝1的側壁部內部在厚度方向的散射狀況。具體地,例如參照圖1,在氧化矽玻璃坩堝1朝向下設置的情況下,拍攝裝置部3在氧化矽玻璃坩堝1的下側以透鏡部朝向上方的形式設置。 The imaging device unit 3 is a general imaging device, and includes a CCD (Charge Coupled Device) image sensor (CMOS), a CMOS (Complementary Metal Oxide Semiconductor) image sensor, and the like. Photographic elements; and lens parts, etc. The imaging device unit 3 of the present embodiment is configured such that it is provided at an end surface position (that is, an end surface direction) at which the yttrium-glass diaphragm 1 as a measurement object can be imaged, and a ring around the upper end opening of the portion into which the laser beam is incident. In the direction of the end surface, the scattering of the laser beam incident into the yttrium oxide glass crucible 1 by the laser light source 2 in the thickness direction of the side wall portion of the yttrium glass crucible 1 is measured. Specifically, for example, referring to FIG. 1 , in the case where the yttria glass crucible 1 is disposed downward, the imaging device unit 3 is provided on the lower side of the yttrium-glass diaphragm 1 with the lens portion facing upward.
如上所述,射入氧化矽玻璃坩堝1的雷射在該氧化矽玻璃坩堝1的厚度方向的各位置處,根據氧化矽玻璃坩堝1的構造表示各種散射狀況。因此,拍攝裝置部3通過拍攝氧化矽玻璃坩堝1的端面,來獲取表示雷射在氧化矽玻璃坩堝1的側壁部內部的厚度方向的各位置處的散射狀況的圖像數據。之後,拍攝裝置部3將獲取到的圖像數據顯示在例如未圖示的顯示部上。 As described above, the laser beam incident on the yttrium oxide glass crucible 1 indicates various scattering states in accordance with the structure of the yttrium oxide glass crucible 1 at each position in the thickness direction of the yttrium oxide glass crucible 1. Therefore, the imaging device unit 3 acquires image data indicating the scattering state of the laser at each position in the thickness direction inside the side wall portion of the yttrium oxide glass crucible by photographing the end surface of the yttrium-glass diaphragm 1 . Thereafter, the imaging device unit 3 displays the acquired image data on, for example, a display unit (not shown).
例如,在通過光學顯微鏡或金屬顯微鏡來觀察物件的情況下,利用透射光或反射光。即便在使用雷射等來觀察物件的情況下,也普遍地利用透射光或反射光來觀察物件。因此,拍攝裝置部3等觀測裝置一般地設置在能夠觀測反射光或透射光的位置,即設置在作為光射出部的雷射光源2的附近,或者設置在從雷射光源2觀察夾著氧化矽玻璃坩堝1的側壁部的相對側位置。 For example, in the case of observing an object by an optical microscope or a metal microscope, transmitted light or reflected light is utilized. Even in the case of using a laser or the like to observe an object, it is common to use transmitted light or reflected light to observe an object. Therefore, the observation device such as the imaging device unit 3 is generally disposed at a position where the reflected light or the transmitted light can be observed, that is, in the vicinity of the laser light source 2 as the light emitting portion, or in the observation of the oxidation from the laser light source 2 The opposite side position of the side wall portion of the glass crucible 1.
另一方面,本申請的發明如上述那樣,將拍攝裝置部3設置在能夠拍攝氧化矽玻璃坩堝1的端面的、從雷射射入方向觀察垂直方向位置(即, 端面方向)。這樣,在本申請的發明中,通過在與一般的位置不同的位置配置拍攝裝置部3,能夠不破壞並且簡便地獲取表示氧化矽玻璃坩堝1在厚度方向的各位置處的散射狀況的圖像數據,能夠測量厚度方向的層構造。 On the other hand, in the invention of the present application, as described above, the imaging device unit 3 is provided at an end surface where the end face of the yttrium oxide glass crucible 1 can be imaged, and the vertical direction is viewed from the laser incident direction (that is, End direction). As described above, in the invention of the present application, by arranging the imaging device unit 3 at a position different from the general position, it is possible to easily acquire an image indicating the scattering state of each of the positions of the yttria glass sheets 1 in the thickness direction without breaking and easily. Data, capable of measuring the layer structure in the thickness direction.
圖2至圖4是作為射入氧化矽玻璃坩堝1內的雷射的散射狀況而由拍攝裝置部3獲取的圖像數據的示意圖。用兩根線表示雷射的散射狀態,以兩根線的間隔表示雷射散射的強弱。在圖2至圖4中,以兩根線的較寬間隔表示引起較多雷射散射的區域,以兩根線的較窄間隔表示較少雷射散射的區域。另外,在兩根線之間以外的區域表示沒有射入或透射雷射,即沒有觀察到雷射散射。從而,如果散射頻度大則散射光的強度強,相反地,如果散射頻度小則散射光的強度弱。 FIG. 2 to FIG. 4 are schematic diagrams of image data acquired by the imaging device unit 3 as a scattering condition of the laser incident into the yttrium oxide glass crucible 1. The scattering state of the laser is represented by two lines, and the intensity of the laser scattering is represented by the interval between the two lines. In Figures 2 to 4, the regions causing more laser scattering are represented by the wider spacing of the two lines, and the regions of less laser scattering are represented by the narrower spacing of the two lines. In addition, the area other than between the two lines indicates that there is no incident or transmission laser, that is, no laser scattering is observed. Therefore, if the dispersion radio frequency is large, the intensity of the scattered light is strong, and conversely, if the dispersion radio frequency is small, the intensity of the scattered light is weak.
圖2表示從氧化矽玻璃坩堝1的內表面射入雷射,射入雷射在內表面側的透明層不散射而透射,但是在含氣泡層被散射。 Fig. 2 shows that a laser beam is incident from the inner surface of the yttrium-glass iridium 1 and the transparent layer incident on the inner surface side of the laser is transmitted without scattering, but is scattered in the bubble-containing layer.
圖3與圖2同樣地表示在氧化矽玻璃坩堝1的內表面側存在透明層,在含氣泡層存在散射雷射的強度不同的區域。散射雷射的強度在靠近透明層以及靠近外側的含氣泡層強,在其中間的區域散射強度弱。這是因為,作為光散射層的含氣泡層由多層構成。 3 shows a transparent layer on the inner surface side of the yttrium oxide glass crucible 1 in the same manner as in FIG. 2, and a region in which the intensity of the scattering laser is different in the bubble-containing layer. The intensity of the scattered laser is strong near the transparent layer and the bubble-containing layer near the outer side, and the scattering intensity is weak in the middle portion. This is because the bubble-containing layer as the light-scattering layer is composed of a plurality of layers.
圖4與圖3同樣地,表示射入雷射在含氣泡層散射,並且在透明層區域散射。這表示在透明層區域存在目測無法確認的成為散射中心的裂紋等缺陷,通過測量雷射的散射光,能夠發現透明層中目測無法發現的缺陷。 4 is the same as FIG. 3, showing that the incident laser is scattered in the bubble-containing layer and scattered in the transparent layer region. This indicates that a defect such as a crack which is a scattering center which cannot be confirmed by visual inspection exists in the transparent layer region, and by measuring the scattered light of the laser, it is possible to find a defect which cannot be visually observed in the transparent layer.
這樣,拍攝裝置部3獲取根據氧化矽玻璃坩堝1在厚度方向的層構造表示透射或部分散射等各種散射狀況並表示射入氧化矽玻璃坩堝1的雷射的狀態的圖像數據。通過參照拍攝裝置部3獲取到的圖像數據,能夠不破壞並容易地判別氧化矽玻璃坩堝1的厚度方向的層構造。 In this way, the imaging device unit 3 acquires image data indicating a state of laser light incident on the cerium oxide glass crucible 1 in accordance with various scattering states such as transmission or partial scattering in the layer structure in the thickness direction of the bismuth glass oxide crucible 1 . By referring to the image data acquired by the imaging device unit 3, it is possible to easily determine the layer structure in the thickness direction of the cerium oxide glass crucible 1 without breaking.
圖5是表示第一實施方式涉及的坩堝測量方法的流程的一個示例的流程圖。 FIG. 5 is a flowchart showing an example of a flow of a flaw measurement method according to the first embodiment.
如圖5所示,利用雷射光源2,從氧化矽玻璃坩堝1的內側朝向該氧化 矽玻璃坩堝1的厚度方向射出雷射(步驟S101)。由此,對氧化矽玻璃坩堝1射入雷射。之後,射入氧化矽玻璃坩堝1的雷射根據該氧化矽玻璃坩堝1的構造,表示出透射或部分散射等各種散射狀況。 As shown in FIG. 5, the laser light source 2 is used to oxidize from the inner side of the yttrium oxide glass crucible 1 The laser beam is emitted in the thickness direction of the glass crucible 1 (step S101). Thereby, the cerium oxide glass crucible 1 is incident on the laser. Thereafter, the laser beam incident on the yttrium oxide glass crucible 1 exhibits various scattering conditions such as transmission or partial scattering according to the structure of the yttria glass crucible 1.
接著,通過拍攝裝置部3拍攝氧化矽玻璃坩堝1的側壁部內部的端面。由此,拍攝裝置部3測量雷射在氧化矽玻璃坩堝1的厚度方向的各位置處的散射狀況。即,通過拍攝裝置部3來拍攝氧化矽玻璃坩堝1的端面,由此來獲取表示雷射的散射狀況的圖像數據(步驟S102)。之後,拍攝裝置部3例如將獲取到的圖像數據顯示在顯示裝置上。 Next, the end surface inside the side wall portion of the cerium oxide glass crucible 1 is imaged by the imaging device unit 3. Thereby, the imaging device unit 3 measures the scattering state of the laser at each position in the thickness direction of the yttrium oxide glass crucible 1. In other words, the end surface of the yttrium oxide glass crucible 1 is imaged by the imaging device unit 3, thereby acquiring image data indicating the scattering state of the laser (step S102). Thereafter, the imaging device unit 3 displays the acquired image data on the display device, for example.
接著,通過拍攝裝置部3拍攝氧化矽玻璃坩堝1的側壁部內部的端面,來獲取表示雷射在氧化矽玻璃坩堝1的厚度方向的各位置處的散射狀況的圖像數據(步驟S102)。之後,拍攝裝置部3例如將獲取到的圖像數據顯示在顯示裝置上。 Then, the imaging device unit 3 captures the end surface inside the side wall portion of the cerium oxide glass crucible 1 to acquire image data indicating the scattering state of the laser at each position in the thickness direction of the bismuth oxide glass crucible 1 (step S102). Thereafter, the imaging device unit 3 displays the acquired image data on the display device, for example.
另外,本實施方式的坩堝測量裝置能夠包括未圖示的圖像解析部,其解析由拍攝裝置部3獲取到的圖像數據,來判定光透射層或光散射層等氧化矽玻璃坩堝1的厚度方向的層構造(光透射層、光散射層以及光透射層的厚度等)。另外,坩堝測量方法能夠構成為,解析圖像數據來判定氧化矽玻璃坩堝1的厚度方向的層構造(光透射層、光散射層以及光透射層的厚度等)。 In addition, the flaw measuring device of the present embodiment can include an image analyzing unit (not shown) that analyzes the image data acquired by the imaging device unit 3 to determine the iridium oxide glass dome 1 such as a light transmitting layer or a light scattering layer. The layer structure in the thickness direction (the thickness of the light transmitting layer, the light scattering layer, and the light transmitting layer, etc.). Further, the ruthenium measurement method can be configured to analyze the image data to determine the layer structure (the thickness of the light transmission layer, the light scattering layer, and the light transmission layer) in the thickness direction of the yttrium oxide glass crucible 1 .
圖像解析部例如是一般的信息處理裝置,包括運算裝置和存儲裝置,通過由運算裝置執行存儲裝置所存儲的程式,來實現對由拍攝裝置部3獲取到的圖像數據進行解析的功能。即,圖像解析部基於圖像數據來判斷氧化矽玻璃坩堝1的厚度方向的層構造。由此,能夠自動地判斷氧化矽玻璃坩堝1的厚度方向的層構造。 The image analysis unit is, for example, a general information processing device including an arithmetic unit and a storage device, and the function of analyzing the image data acquired by the imaging device unit 3 is realized by executing the program stored in the storage device by the arithmetic unit. In other words, the image analysis unit determines the layer structure in the thickness direction of the cerium oxide glass crucible 1 based on the image data. Thereby, the layer structure in the thickness direction of the cerium oxide glass crucible 1 can be automatically determined.
另外,在本實施方式中,當對氧化矽玻璃坩堝1射入雷射時,也可以以射入角成為布儒斯特角的方式射入雷射。另外,此時也可以構成為雷射光源2射出p偏振光的雷射。另外,p偏振光是指電場的振動方向與射入面平行的朝向的偏振光。 Further, in the present embodiment, when the laser beam is incident on the yttria glass crucible 1, the laser may be incident so that the incident angle becomes the Brewster's angle. Further, at this time, a laser beam in which the laser light source 2 emits p-polarized light may be configured. Further, the p-polarized light refers to polarized light in a direction in which the direction of vibration of the electric field is parallel to the incident surface.
通過這樣的結構,能夠使由雷射光源2射出的雷射在空氣與氧化矽玻璃坩堝1之間的界面不反射地射入,因此能夠將其利用於全部層構造等的觀測,能夠有效地觀察氧化矽玻璃坩堝1的狀態。另外,當觀察雷射的散射狀況時,因為在空氣與氧化矽玻璃坩堝1之間的界面不引起反射,所以能夠不受反射光的影響地檢測例如處於界面附近的層構造或缺陷等。 With such a configuration, the laser beam emitted from the laser light source 2 can be incident on the interface between the air and the yttrium oxide glass crucible 1 without being reflected. Therefore, it can be used for observation of all layer structures and the like, and can be effectively used. The state of the yttrium oxide glass crucible 1 was observed. Further, when the scattering state of the laser is observed, since the interface between the air and the yttrium oxide glass crucible 1 does not cause reflection, it is possible to detect, for example, a layer structure or a defect in the vicinity of the interface, without being affected by the reflected light.
此外,射入角也可以不準確地成為布儒斯特角。通過以接近布儒斯特角的方式射出雷射,即便不是準確的角度也能夠獲得某種程度的效果。 In addition, the angle of incidence may also be inaccurately a Brewster's angle. By projecting the laser in a manner close to the Brewster angle, a certain degree of effect can be obtained even if it is not an accurate angle.
因為雷射光源2射入雷射的氧化矽玻璃坩堝1的上端部附近是具有圓筒狀形狀的側壁部,所以變成對曲面射入雷射,如果雷射光源2的位置發生偏差則射入角發生變化,有時不能成為布儒斯特角。並且,如上述那樣,因為氧化矽玻璃坩堝1例如通過旋轉模具法來製造,所以製造出的氧化矽玻璃坩堝1的形狀有時與設計圖之間存在偏差。因此,需要以在所決定的位置射入角成為布儒斯特角的方式來準確地決定雷射的射出位置和射入角度,並射入雷射。 Since the upper end portion of the yttria glass crucible 1 in which the laser light source 2 is incident on the laser beam has a cylindrical side wall portion, the laser beam is incident on the curved surface, and if the position of the laser light source 2 is deviated, the incident is made. The angle changes and sometimes it cannot become the Brewster angle. Further, as described above, since the yttrium oxide glass crucible 1 is produced by, for example, a rotary die method, the shape of the produced yttrium oxide glass crucible 1 may vary from the design. Therefore, it is necessary to accurately determine the emission position and the incident angle of the laser so that the incident angle becomes the Brewster angle at the determined position, and it is necessary to inject the laser.
例如,關於32英寸的氧化矽玻璃坩堝,其內徑約為81.3cm,其質量為50kg至60kg,關於40英寸的氧化矽玻璃坩堝,其內徑約為101.6cm,其質量為90kg至100kg,因此氧化矽玻璃坩堝是大型的重物。為了在這樣的氧化矽玻璃坩堝的某個測量位置,以所需的位置和角度射入雷射並觀察散射光,困難之處在於通過使氧化矽玻璃坩堝1自身活動來高精度地調整設置位置以及設置角度。 For example, regarding a 32-inch yttrium oxide glass crucible having an inner diameter of about 81.3 cm and a mass of 50 kg to 60 kg, with respect to a 40-inch yttria glass crucible having an inner diameter of about 101.6 cm and a mass of 90 kg to 100 kg, Therefore, bismuth oxide glass crucible is a large weight. In order to inject a laser at a desired position and angle at a certain measurement position of such a bismuth oxide glass crucible and observe the scattered light, it is difficult to adjust the set position with high precision by causing the yttrium oxide glass crucible 1 to move itself. And set the angle.
因此,例如利用機械手等來預先測量氧化矽玻璃坩堝1的內表面的三維形狀(三維座標),算出相對於該測量位置的射出雷射的位置和角度,針對每個測量點能夠一邊改變雷射光源的位置和角度一邊進行測量,所以不需要調整氧化矽玻璃坩堝1自身的設置位置。 Therefore, for example, a three-dimensional shape (three-dimensional coordinate) of the inner surface of the yttrium oxide glass crucible 1 is measured in advance by a robot or the like, and the position and angle of the emitted laser light with respect to the measurement position are calculated, and the lightning can be changed for each measurement point. Since the position and angle of the light source are measured, it is not necessary to adjust the installation position of the bismuth oxide glass crucible 1 itself.
另外,關於氧化矽玻璃坩堝1的內表面的三維形狀測量,例如在機械手的前端設置由雷射位移感測器等構成的內部測距部,使該內部測距部沿著坩堝內表面非接觸地移動來測量。具體地,在內部測距部的移動路徑上的多個測量點,對氧化矽玻璃坩堝1的內表面沿著傾斜方向射出雷射,並 檢測其反射光,由此能夠測量氧化矽玻璃坩堝1的內表面的三維形狀。從而,通過活用該測量結果,能夠容易地以相對於氧化矽玻璃坩堝1射入角成為布儒斯特角的方式,射出雷射。 Further, regarding the three-dimensional shape measurement of the inner surface of the yttrium oxide glass crucible 1, for example, an internal distance measuring portion composed of a laser displacement sensor or the like is provided at the tip end of the manipulator so that the inner distance measuring portion is not along the inner surface of the crucible Move with contact to measure. Specifically, at a plurality of measurement points on the moving path of the internal distance measuring portion, the inner surface of the yttrium glass crucible 1 is irradiated with a laser in an oblique direction, and The reflected light is detected, whereby the three-dimensional shape of the inner surface of the yttrium oxide glass crucible 1 can be measured. Therefore, by utilizing the measurement result, it is possible to easily emit the laser so that the incident angle with respect to the yttrium oxide glass crucible 1 becomes the Brewster's angle.
如上述那樣,根據本實施方式的坩堝測量裝置和測量方法,能夠測量光透射層和光散射層的厚度。在測量光透射層和光散射層的厚度的情況下,如果射入角與射入面的法線方向偏離(即,相對於氧化矽玻璃坩堝1不是在垂直方向而是在傾斜方向,射入雷射),則誤差變大而無法準確地測量。因此,優選從雷射光源2射出的雷射的射入角θ(射入面的與法線方向的角度)滿足下述公式地射出。另外,在下面的公式中,將氧化矽玻璃坩堝1的壁厚(光透射層和光散射層的厚度)表示為T,將允許的誤差表示為△T。 As described above, according to the flaw measuring device and the measuring method of the present embodiment, the thicknesses of the light transmitting layer and the light scattering layer can be measured. In the case of measuring the thickness of the light transmitting layer and the light scattering layer, if the incident angle is deviated from the normal direction of the incident surface (ie, with respect to the yttrium oxide glass crucible 1 not in the vertical direction but in the oblique direction, the lightning is incident Shot), the error becomes large and cannot be accurately measured. Therefore, it is preferable that the incident angle θ (the angle of the incident surface from the normal direction) of the laser beam emitted from the laser light source 2 is emitted in accordance with the following formula. Further, in the following formula, the wall thickness (thickness of the light transmitting layer and the light scattering layer) of the yttrium oxide glass crucible 1 is represented as T, and the allowable error is expressed as ΔT.
公式1 θ=arccos T/(△T+T) Formula 1 θ=arccos T/(△T+T)
根據上述公式,表1示出氧化矽玻璃坩堝1的壁厚T、允許差△T與射入角θ的關係。例如,當坩堝的壁厚為10mm時,允許差為0.1mm時所允許的雷射的射入角在8.0°以內。這樣,以成為與氧化矽玻璃坩堝1的壁厚T以及能夠允許的偏差△T對應的射入角θ的方式來控制雷射光源2,由此能夠在可允許的誤差的範圍內測量氧化矽玻璃坩堝1的壁厚(例如,光透射層和光散射層的厚度)。另外,當控制角度θ時,優選利用上述內部測距部對氧化矽玻璃坩堝1的內表面的三維形狀的測量結果,能夠在各個點無偏差地準確控制角度θ。 According to the above formula, Table 1 shows the relationship between the wall thickness T of the yttrium oxide glass crucible 1, the allowable difference ΔT, and the incident angle θ. For example, when the wall thickness of the crucible is 10 mm, the allowable laser penetration angle is allowed to be within 8.0° when the difference is 0.1 mm. In this way, the laser light source 2 is controlled so as to have an entrance angle θ corresponding to the wall thickness T of the yttrium oxide glass crucible 1 and the allowable deviation ΔT, whereby the yttrium oxide can be measured within an allowable error range. The wall thickness of the glass crucible 1 (for example, the thickness of the light transmitting layer and the light scattering layer). Further, when the angle θ is controlled, it is preferable to accurately control the angle θ at each point without deviation by using the measurement result of the three-dimensional shape of the inner surface of the yttrium-glass diaphragm 1 by the internal distance measuring unit.
另外,當測量光透射層和光散射層的厚度時,為了減小誤差,優選以 雷射的雷射直徑B(照在氧化矽玻璃坩堝1的部分的雷射直徑)滿足下述公式的方式來控制。另外,在下述公式中,將允許的誤差表示為△T,將氧化矽玻璃坩堝1的壁厚表示為T,將雷射直徑表示為B。 In addition, when measuring the thickness of the light transmitting layer and the light scattering layer, in order to reduce the error, it is preferable to The laser diameter B of the laser (the laser diameter of the portion of the yttrium oxide glass crucible 1) is controlled in such a manner as to satisfy the following formula. Further, in the following formula, the allowable error is expressed as ΔT, the wall thickness of the yttrium oxide glass crucible 1 is represented as T, and the laser diameter is represented as B.
根據上述公式,表2示出氧化矽玻璃坩堝1的壁厚T、允許差△T和雷射直徑B的關係。例如,當坩堝的壁厚為10mm時,允許差為0.1mm時所允許的雷射直徑成為1.4mm。以成為與由表2所示的氧化矽玻璃坩堝1的壁厚T以及能夠允許的偏差△T對應的雷射直徑B的方式來控制雷射光源2,由此在能夠允許的誤差範圍內測量氧化矽玻璃坩堝1的壁厚(例如,光透射層和光散射層的厚度)。 According to the above formula, Table 2 shows the relationship between the wall thickness T of the yttrium oxide glass crucible 1, the allowable difference ΔT, and the laser diameter B. For example, when the wall thickness of the crucible is 10 mm, the allowable laser diameter becomes 1.4 mm when the tolerance is 0.1 mm. The laser light source 2 is controlled so as to become a laser beam diameter B corresponding to the wall thickness T of the yttria glass crucible 1 shown in Table 2 and the allowable deviation ΔT, thereby measuring within an allowable error range. The wall thickness of the yttrium oxide glass crucible 1 (for example, the thickness of the light transmitting layer and the light scattering layer).
雷射射入的部位不限於氧化矽玻璃坩堝1的內側。也可以使雷射在氧化矽玻璃坩堝1的厚度方向,從外側朝向內側射入。另外,也可以使雷射從氧化矽玻璃坩堝1的端面方向射入,從氧化矽玻璃坩堝1的內部測量雷射的散射狀況。該情況下,一邊使要射出的雷射的位置沿著氧化矽玻璃坩堝1的厚度方向移動,一邊測量散射狀況。這樣,能夠把握在氧化矽玻璃坩堝1的內部透明層或含氣泡層形成了凹凸。 The portion into which the laser is incident is not limited to the inner side of the yttrium glass crucible 1. It is also possible to cause the laser to enter from the outer side toward the inner side in the thickness direction of the yttrium glass crucible 1. Further, the laser may be incident from the end face of the yttria glass crucible 1 and the scattering state of the laser may be measured from the inside of the yttrium oxide glass crucible 1. In this case, the scattering state is measured while moving the position of the laser to be emitted along the thickness direction of the yttria glass crucible 1. Thus, it is possible to grasp that irregularities are formed in the inner transparent layer or the bubble-containing layer of the yttrium oxide glass crucible 1.
另外,在從氧化矽玻璃坩堝的內側射出雷射的狀態下使雷射光源2以預定的規定間隔(例如,每隔2~3度、5度、10度。可以是任意角度)旋轉,由此能夠遍佈氧化矽玻璃坩堝1的全部周長地射入雷射。此時,通過使拍攝裝置部3配合雷射光源2的旋轉而移動,能夠測量雷射在遍佈氧化 矽玻璃坩堝1的全部周長的各位置處的散射狀況。其結果,能夠以容易的方法測量遍佈氧化矽玻璃坩堝1的全部周長的該氧化矽玻璃坩堝1的厚度方向的構造。 Further, the laser light source 2 is rotated at a predetermined predetermined interval (for example, every 2 to 3 degrees, 5 degrees, and 10 degrees, which may be an arbitrary angle) in a state where the laser beam is emitted from the inside of the bismuth oxide glass crucible. This enables the laser to be incident throughout the entire circumference of the yttrium glass crucible 1. At this time, by causing the imaging device unit 3 to move in accordance with the rotation of the laser light source 2, it is possible to measure the laser emission throughout the oxidation. The scattering condition at each position of the entire circumference of the glass crucible 1. As a result, the structure in the thickness direction of the yttrium oxide glass crucible 1 over the entire circumference of the yttrium oxide glass crucible 1 can be measured by an easy method.
另外,這樣通過遍佈氧化矽玻璃坩堝1的全部周長地進行測量,能夠測量在該氧化矽玻璃坩堝上端部存在同心圓狀多個層時的各層的厚度分佈和正圓度。另外,還能夠測量透明層與含氣泡層之間的邊界的正圓度。因為還能夠測量氧化矽玻璃坩堝1的內表面的正圓度,所以通過利用氧化矽玻璃坩堝1的內表面的正圓度和透明層與含氣泡層之間的分界的正圓度,能夠算出是否形成了單晶矽提拉所需厚度的透明層。並且,當對單晶矽進行提拉時,如果氧化矽玻璃坩堝的層厚分佈存在不均,則熱傳導會變得不均勻,矽溶液的溫度分佈產生不均。其結果,恒定地保持單晶矽與矽溶液的接觸界面的位置變得困難,有時會產生錯位等問題。根據本實施方式的坩堝測量裝置和坩堝測量方法來測量氧化矽玻璃坩堝1,能夠判別產生轉位等問題的氧化矽玻璃坩堝。另外,當對遍佈氧化矽玻璃坩堝1的全部周長進行測量時,還優選以與後述的水平雷射的組合來執行。 Further, by measuring the entire circumference of the yttrium oxide glass crucible 1 as described above, it is possible to measure the thickness distribution and the roundness of each layer when a plurality of layers of concentric circles are present at the upper end portion of the yttrium oxide glass crucible. In addition, it is also possible to measure the roundness of the boundary between the transparent layer and the bubble-containing layer. Since it is also possible to measure the roundness of the inner surface of the yttrium oxide glass crucible 1, it is possible to calculate by using the roundness of the inner surface of the yttrium oxide glass crucible 1 and the roundness of the boundary between the transparent layer and the bubble-containing layer. Whether a transparent layer of the desired thickness of the single crystal crucible is formed. Further, when the single crystal crucible is pulled, if the layer thickness distribution of the cerium oxide glass crucible is uneven, the heat conduction becomes uneven, and the temperature distribution of the cerium solution is uneven. As a result, it is difficult to constantly maintain the position of the contact interface between the single crystal ruthenium and the ruthenium solution, and problems such as misalignment may occur. According to the ruthenium measurement apparatus and the ruthenium measurement method of the present embodiment, the yttrium oxide glass crucible 1 is measured, and it is possible to discriminate the bismuth oxide glass crucible which causes problems such as indexing. Further, when measuring the entire circumference of the yttrium oxide glass crucible 1, it is preferably performed in combination with a horizontal laser to be described later.
在本實施方式中,說明了作為光射出部使用作為雷射指示器(laser pointer)等單向雷射的雷射光源2的情況,但是也可以利用除了單向雷射以外的其他光射出部。例如,雷射光源2能夠構成為廣角射出(例如,使之通過透鏡來實現,在該透鏡中相對於射入來的雷射的射入角度,使角度擴大規定角度(例如,2倍~4倍)射出)。或者,作為光射出部,也可以利用線性雷射(水平雷射或垂直雷射)或交叉線性雷射。交叉線性雷射通過使射出的雷射在透過準直透鏡後透過圓柱狀棒狀透鏡,由此來射出水平方向以及垂直方向的雷射。 In the present embodiment, a case has been described in which a laser light source 2 that is a one-way laser such as a laser pointer is used as the light emitting portion. However, other light emitting portions other than the one-way laser may be used. . For example, the laser light source 2 can be configured to be emitted at a wide angle (for example, by a lens, in which the angle is increased by a predetermined angle with respect to the incident angle of the incident laser (for example, 2 to 4) Double) shot). Alternatively, as the light emitting portion, a linear laser (horizontal laser or vertical laser) or a cross-linear laser may be used. The cross-linear laser emits a laser in the horizontal direction and the vertical direction by passing the emitted laser beam through the cylindrical rod lens after passing through the collimator lens.
這樣,作為光射出部利用線性雷射或交叉線性雷射,由此能夠一次性地測量大範圍的散射狀況。例如,通過利用與地表呈水平方向的線性雷射(水平雷射),能夠遍佈大範圍地一次性測量氧化矽玻璃坩堝1的側壁部內部的層構造。由此,能夠對範圍整體無遺漏地測量層構造。另外,通過利用垂直方向的線性雷射(垂直雷射:例如使水平雷射傾斜90度後的雷射)或交叉線性雷射,能夠進行更明確的含氣泡層內的層構造的判斷和深度方向的層構造的判斷。另外,朝向傾斜方向(朝向氧化矽玻璃坩堝1的深度 方向的傾斜方向。角度可以任意)射出雷射,還能夠判別缺陷所位於的深度。 In this way, a linear laser or a cross-linear laser is used as the light emitting portion, whereby a wide range of scattering conditions can be measured at one time. For example, by using a linear laser (horizontal laser) in a horizontal direction with the earth's surface, it is possible to measure the layer structure inside the side wall portion of the bismuth oxide glass crucible 1 at a wide range. Thereby, the layer structure can be measured without missing the entire range. In addition, by using a linear laser in the vertical direction (vertical laser: for example, a laser that tilts the horizontal laser by 90 degrees) or a cross-linear laser, it is possible to make a more specific judgment and depth of the layer structure in the bubble-containing layer. Judgment of the layer structure of the direction. In addition, facing the oblique direction (towards the depth of the yttrium glass crucible 1 The direction of the direction of the tilt. The angle can be arbitrarily shot out of the laser, and it is also possible to determine the depth at which the defect is located.
另外,在本實施方式中作為雷射光源2利用了交叉線性雷射等的情況下,例如在距離為5m以內線寬度為2mm左右,對於從雷射光源2到射入對象的距離與射入平坦的射入物件時雷射的線長之比沒有限定,但是優選例如使用成為1:0.3~2左右的比例。 Further, in the case where a cross-linear laser or the like is used as the laser light source 2 in the present embodiment, for example, the distance from the laser light source 2 to the incident object and the incident amount are about 2 mm at a distance of 5 m. The ratio of the line length of the laser when the object is incident on a flat surface is not limited, but it is preferably used in a ratio of about 1:0.3 to 2, for example.
本實施方式的氧化矽玻璃坩堝的製造方法包括在使氧化矽粉熔化後使其冷卻來形成氧化矽玻璃層的氧化矽玻璃層形成程序和氧化矽玻璃坩堝檢查程序。 The method for producing a cerium oxide glass crucible according to the present embodiment includes a cerium oxide glass layer forming program and a cerium oxide glass ruthenium inspection program in which cerium oxide powder is melted and then cooled to form a cerium oxide glass layer.
氧化矽玻璃坩堝形成程序包括如下程序:(1)一邊使具有對石英玻璃坩堝的外形進行規定的碗狀內表面的模具旋轉,一邊在其內部的內表面(底部以及側面)上堆積規定厚度的晶質或非晶質的氧化矽粉,由此來形成氧化矽玻璃層用的氧化矽粉層;(2)通過對該氧化矽粉層進行電弧放電來加熱到2000℃~2600℃,使其熔化然後固化,由此進行玻璃化同時立刻冷卻;以及(3)將開口端部切斷成規定寬度,使開口端部的形狀變得整齊。 The cerium oxide glass crucible forming program includes the following procedure: (1) depositing a predetermined thickness on the inner surface (bottom and side surfaces) of the inner surface of the inner surface (bottom and side surfaces) of the inner surface (the bottom surface and the side surface) having a predetermined inner surface of the quartz glass crucible a crystalline or amorphous cerium oxide powder to form a cerium oxide powder layer for a cerium oxide glass layer; (2) heating the cerium oxide powder layer to 2000 ° C to 2600 ° C by arc discharge Melting and then solidifying, thereby performing vitrification while cooling immediately; and (3) cutting the open end portion to a predetermined width to make the shape of the open end portion uniform.
氧化矽玻璃坩堝檢查程序包括對上述的氧化矽玻璃坩堝的厚度方向的各位置處的散射狀況進行測量的程序,並將其實施到經過上述氧化矽玻璃坩堝形成程序的氧化矽玻璃坩堝。在本檢查程序中,通過甄別合格的氧化矽玻璃坩堝,能夠製造具有上述各優點的氧化矽玻璃坩堝。 The cerium oxide glass ruthenium inspection program includes a procedure for measuring the scattering state at each position in the thickness direction of the above-described cerium oxide glass crucible, and is carried out to the cerium oxide glass crucible subjected to the above-described cerium oxide glass crucible forming procedure. In this inspection procedure, it is possible to manufacture a cerium oxide glass crucible having the above various advantages by discriminating a qualified cerium oxide glass crucible.
圖6至圖9是實際利用拍攝裝置部3拍攝從內側對氧化矽玻璃坩堝1射入雷射時的雷射的散射狀況而得到的圖像。 FIG. 6 to FIG. 9 are images obtained by actually capturing the scattering state of the laser beam when the laser beam is incident on the alumina glass raft 1 from the inside by the imaging device unit 3.
圖6表示射入氧化矽玻璃坩堝1的雷射從該氧化矽玻璃坩堝1的內側透射到規定位置後進行部分散射的狀態。該氧化矽玻璃坩堝1具有雷射透射的區域即光透射層(透明層且沒有缺陷的層)和位於光透射層外側且雷射散射的區域即光散射層(含氣泡層等),判斷為該光散射層是單層構造。 Fig. 6 shows a state in which a laser beam incident on the yttrium oxide glass crucible 1 is partially scattered by being transmitted from a inside of the yttrium oxide glass crucible 1 to a predetermined position. The yttrium oxide glass crucible 1 has a light transmitting layer (a transparent layer and a layer having no defects) and a light scattering layer (including a bubble layer or the like) which is located outside the light transmitting layer and is scattered by the light transmitting layer, and is determined as The light scattering layer is a single layer structure.
圖7表示射入的雷射從氧化矽玻璃坩堝1的內側透射到規定位置後, 先強散射之後散射變弱,再次強散射的狀態。該氧化矽玻璃坩堝1具有光透射層和在光透射層外側的光散射層,判斷為該光散射層由多層構成。 Figure 7 shows that after the incident laser is transmitted from the inside of the yttrium glass yttrium 1 to a predetermined position, After the strong scattering, the scattering becomes weak and the state is strongly scattered again. The yttria glass crucible 1 has a light transmitting layer and a light scattering layer outside the light transmitting layer, and it is determined that the light scattering layer is composed of a plurality of layers.
圖8表示射入雷射從氧化矽玻璃坩堝1的內側透射到規定位置後,先強散射,散射一旦中斷後,接著雷射散射。該氧化矽玻璃坩堝1具有光透射層和在光透射層外側的光散射層,判斷為光散射層由多層構成。 Fig. 8 shows that after the incident laser beam is transmitted from the inside of the yttrium glass yttrium 1 to a predetermined position, it is strongly scattered first, and once the scattering is interrupted, the laser scatters. The yttria glass crucible 1 has a light transmitting layer and a light scattering layer outside the light transmitting layer, and it is determined that the light scattering layer is composed of a plurality of layers.
圖9表示射入雷射最初散射後,一旦透射後,接著散射。該氧化矽玻璃坩堝1具有光透射層和在光透射層外側的光散射層,判斷為被認為在透明層內的氧化矽玻璃坩堝1的內側部分具有缺陷(形成了光散射層)。 Figure 9 shows the initial scattering of the incident laser, once transmitted, followed by scattering. This yttria glass crucible 1 has a light transmitting layer and a light scattering layer outside the light transmitting layer, and is judged to have a defect (a light scattering layer is formed) in the inner portion of the yttrium oxide glass crucible 1 in the transparent layer.
圖10和圖11表示圖6和圖7的氧化矽玻璃坩堝1的歪曲(內部殘留應力)。如圖10所示,在圖6的氧化矽玻璃坩堝1(具有光透射層和光散射層,判斷為光散射層由單層構造構成的氧化矽玻璃坩堝)中,判斷為儘管在光透射層和光散射層之間存在內部殘留應力的邊界,但在除此之外的部分內部殘留應力緩慢地變化。另外,氧化矽玻璃因為具有雙折射性,所以如果內部殘留應力急劇地變化,則折射率也會急劇地變化,能夠觀察到對比度。 10 and 11 show the distortion (internal residual stress) of the yttria glass crucible 1 of Figs. 6 and 7. As shown in FIG. 10, in the yttria glass crucible 1 of FIG. 6 (having a light-transmitting layer and a light-scattering layer, the light-scattering layer is determined to be a single-layer structure of yttrium oxide glass), it is judged that although in the light-transmitting layer and light There is a boundary of internal residual stress between the scattering layers, but the internal residual stress in the other portions is slowly changed. Further, since yttria glass has birefringence, if the internal residual stress sharply changes, the refractive index also changes abruptly, and contrast can be observed.
如圖11所示,在圖7的氧化矽玻璃坩堝1(具有光透射層和光散射層,判斷為光散射層含有多個層而構成的氧化矽玻璃坩堝)中,也判斷為在光散射層的內部存在內部殘留應力的邊界(急劇的變化)。 As shown in FIG. 11, in the yttria glass crucible 1 (having a light-transmitting layer and a light-scattering layer, the light-scattering layer is determined to include a plurality of layers), the light-scattering layer is also judged to be in the light-scattering layer. There is a boundary (abrupt change) of internal residual stress inside.
這樣,在氧化矽玻璃坩堝1的雷射散射狀況與歪曲之間,能夠觀察到對應關係。一般認為,氧化矽玻璃在原子等級處於壓縮或拉伸的狀態,Si-O-Si鍵合的距離(原子的密度)不均勻,歪曲與此相同,該歪曲引起射入雷射的散射。 Thus, the correspondence relationship can be observed between the laser scattering state of the yttrium oxide glass crucible 1 and the distortion. It is considered that the yttrium oxide glass is in a state of being compressed or stretched at an atomic level, and the distance (the density of atoms) of the Si-O-Si bonding is not uniform, and the distortion is the same, and the distortion causes scattering of the incident laser.
歪曲檢查一般地是破壞檢查,破壞氧化矽玻璃坩堝1來進行。因此,通過代替歪曲檢查,不破壞並簡便地測量本發明的雷射散射狀況,能夠簡便地進行歪曲檢查。另外,還能夠測量雷射的散射狀況,根據該測量的結果(根據需要)來進行退火處理等。 The distortion inspection is generally performed by destroying the inspection and destroying the bismuth oxide glass crucible 1. Therefore, the distortion test can be easily performed by replacing the distortion test without damaging and simply measuring the laser scattering state of the present invention. In addition, it is also possible to measure the scattering state of the laser, and perform annealing treatment or the like based on the result of the measurement (if necessary).
為了製造單晶矽而將多晶矽裝入氧化矽玻璃坩堝1內部時,存在由於 多晶矽而對氧化矽玻璃坩堝1的內部造成壓痕的情況。在這樣的情況下,假如氧化矽玻璃坩堝1內的歪曲大,則壓痕有時會導致氧化矽玻璃坩堝1發生裂縫,但是在造成壓痕後,有時也不會直接就產生裂縫。因此,在單結晶矽提拉程序中也存在裂縫的情況,尤其是當正在使矽融解時氧化矽玻璃坩堝1發生裂縫的情況下,會使提拉裝置發生破損,矽原料廢棄,從而產生經濟損失。根據本發明的測量方法,能夠以非破壞性且容易的方法來代替氧化矽玻璃坩堝1的歪曲測量,能夠在事前防止產生上述損失。 When polycrystalline germanium is loaded into the interior of the cerium oxide glass crucible 1 in order to manufacture a single crystal germanium, there is a Polycrystalline germanium causes indentation of the inside of the cerium oxide glass crucible 1. In such a case, if the distortion in the yttrium oxide glass crucible 1 is large, the indentation may cause cracks in the yttrium oxide glass crucible 1, but cracks may not occur directly after the indentation is caused. Therefore, there is also a crack in the single crystal 矽 pulling process, especially when the bismuth oxide bismuth 1 is cracked when the ruthenium is being melted, the pulling device is broken, and the raw material is discarded, thereby generating economy. loss. According to the measuring method of the present invention, the distortion measurement of the yttrium oxide glass crucible 1 can be replaced by a non-destructive and easy method, and the above-described loss can be prevented in advance.
圖12和圖13是表示使用了交叉線性雷射時的散射狀況的圖。圖12是使用交叉線性雷射射出雷射時的、拍攝氧化矽玻璃坩堝1的厚度方向的散射狀況的圖,可知通過使用交叉線性雷射,能夠在拍攝裝置部3所拍攝的全部範圍判別光透射層和光散射層。 12 and 13 are diagrams showing the state of scattering when a cross-linear laser is used. FIG. 12 is a view showing a scattering state in the thickness direction of the yttrium oxide glass crucible 1 when a laser is emitted using a cross-linear laser, and it is understood that light can be discriminated in the entire range of the imaging device unit 3 by using a cross-linear laser. Transmission layer and light scattering layer.
如果利用交叉線性雷射,則能夠測量大範圍的散射狀況,除了光透射層和光散射層的構造以外,例如還存在能夠判別緣端的加工痕跡的情況。在圖13中,表示射入交叉線性雷射在透明層的區域也發生了散射。 If a cross-linear laser is used, it is possible to measure a wide range of scattering conditions, and in addition to the configuration of the light-transmitting layer and the light-scattering layer, for example, it is possible to determine the processing trace of the edge. In Fig. 13, it is shown that the incident cross-linear laser is also scattered in the region of the transparent layer.
接著,參照圖14至圖16說明本發明的第二實施方式。圖14表示本實施方式的坩堝測量裝置的結構的一個示例。圖15是表示第二實施方式涉及的坩堝測量方法的流程的一個示例的流程圖。圖16是表示坩堝的內表面與照明部之間的距離給予散射狀況測量的影響的圖。 Next, a second embodiment of the present invention will be described with reference to Figs. 14 to 16 . Fig. 14 shows an example of the configuration of the helium measurement device of the present embodiment. FIG. 15 is a flowchart showing an example of a flow of a flaw measurement method according to the second embodiment. Fig. 16 is a view showing the influence of the distance between the inner surface of the crucible and the illumination portion on the measurement of the scattering condition.
在本實施方式中,說明在規定波長的光的照射下測量射入氧化矽玻璃坩堝1的雷射的散射狀況的坩堝測量裝置。另外,說明利用上述坩堝測量裝置來進行的坩堝測量方法。 In the present embodiment, a helium measurement device that measures the scattering state of a laser beam incident on the yttria glass crucible 1 under irradiation of light of a predetermined wavelength will be described. In addition, a method of measuring the flaw by the above-described helium measurement device will be described.
如圖14所示,本實施方式的坩堝測量裝置具有雷射光源2、拍攝裝置部3以及照明部4。雷射光源2和拍攝裝置部3的結構與第一實施方式中說明的相同。因此,省略重複的說明。 As shown in FIG. 14, the xenon measurement device of the present embodiment includes a laser light source 2, an imaging device unit 3, and an illumination unit 4. The configurations of the laser light source 2 and the imaging device unit 3 are the same as those described in the first embodiment. Therefore, the repeated description is omitted.
照明部4由例如LED(Light emitting diode,發光二極體)等構成,構成為照射波長與雷射光源2射出的雷射的波長對應的光。具體地構成為,例 如當雷射光源2射出紅色雷射時,照明部4照射藍色波長的光。 The illumination unit 4 is configured by, for example, an LED (Light Emitting Diode) or the like, and is configured to emit light having a wavelength corresponding to the wavelength of the laser beam emitted from the laser light source 2. Specifically configured as an example When the laser light source 2 emits a red laser, the illumination unit 4 illuminates the light of the blue wavelength.
因為色相與雷射相近的照明會使得雷射散射變得不醒目,所以優選避免照明部4照射的光(照明)。即,優選照明部4照射不含有波長與雷射光源2射出的雷射的波長接近的光。作為示例,在從雷射光源2射出的光的波長是630nm的情況下,優選使用不含有波長為630nm附近的藍色波長的光照明。另外,這是因為,當某個物體照到白色光而反射光紅色可見的情況下,該物體反射在人類的眼睛紅色可見的區域的波長的光,而吸收除此之外的波長的光。因此即便照到人類的眼睛藍色可見的區域的波長的光,該物體也不會見到紅色。 Since the illumination in which the hue is close to the laser causes the laser scattering to become unobtrusive, it is preferable to avoid the light (illumination) irradiated by the illumination portion 4. That is, it is preferable that the illumination unit 4 emits light that does not include a wavelength close to the wavelength of the laser beam emitted from the laser light source 2. As an example, when the wavelength of the light emitted from the laser light source 2 is 630 nm, it is preferable to use light illumination that does not include a blue wavelength having a wavelength of around 630 nm. In addition, this is because, when an object is illuminated by white light and the reflected light is red, the object reflects light of a wavelength in a red-visible region of the human eye, and absorbs light of other wavelengths. Therefore, even if the light of the wavelength of the blue visible area of the human eye is illuminated, the object will not see red.
當雷射光源2對氧化矽玻璃坩堝1射入雷射時,照明部4進行與該雷射的波長對應地調整的光照射,拍攝裝置部3拍攝氧化矽玻璃坩堝1的端面,由此能夠測量雷射的散射狀況。其結果,能夠以更高精度來測量氧化矽玻璃坩堝1的厚度方向的層構造。 When the laser light source 2 enters the laser beam to the yttria glass crucible 1, the illumination unit 4 performs light irradiation adjusted in accordance with the wavelength of the laser light, and the imaging device unit 3 captures the end surface of the yttrium oxide glass crucible 1 Measure the scattering of the laser. As a result, the layer structure in the thickness direction of the yttrium oxide glass crucible 1 can be measured with higher precision.
下面,參照圖15說明利用上述坩堝測量裝置進行的坩堝測量方法的一個示例。 Next, an example of a flaw measurement method by the above-described helium measurement device will be described with reference to FIG.
參照圖15,首先利用雷射光源2,從氧化矽玻璃坩堝1的內側朝向厚度方向射出雷射(步驟S101)。由此,對氧化矽玻璃坩堝1射入雷射。之後,射入氧化矽玻璃坩堝1的雷射與該氧化矽玻璃坩堝1的構造對應地表示透射或部分散射等各種散射狀況。 Referring to Fig. 15, first, the laser light source 2 is used to emit a laser beam from the inner side of the beryllium oxide glass crucible 1 in the thickness direction (step S101). Thereby, the cerium oxide glass crucible 1 is incident on the laser. Thereafter, the laser beam incident on the yttrium oxide glass crucible 1 indicates various scattering states such as transmission or partial scattering in accordance with the structure of the yttrium oxide glass crucible 1.
接著,假如在雷射的射出前後,利用照明部4照射與該雷射對應的照明光(S201)。由此,在照明部4的照明下,雷射射入氧化矽玻璃坩堝1。 Next, if the illumination unit 4 is used to illuminate the illumination light corresponding to the laser before and after the laser is emitted (S201). Thereby, the laser beam is incident on the iridium oxide glass crucible 1 under the illumination of the illumination unit 4.
之後,通過拍攝裝置部3拍攝氧化矽玻璃坩堝1的端面。由此,拍攝裝置部3在照明部4的照明下,測量氧化矽玻璃坩堝1的厚度方向的各位置的雷射的散射狀況。即,通過拍攝裝置部3拍攝氧化矽玻璃坩堝1的端面,來獲取表示雷射的散射狀況的圖像數據(步驟S102)。之後,拍攝裝置部3例如將獲取到的圖像數據顯示在顯示裝置上。 Thereafter, the end face of the yttria glass crucible 1 is imaged by the imaging device unit 3. Thereby, the imaging device unit 3 measures the scattering state of the laser at each position in the thickness direction of the yttrium-glass diaphragm 1 under the illumination of the illumination unit 4. In other words, the imaging device unit 3 captures the end surface of the yttrium-glass diaphragm 1 to acquire image data indicating the scattering state of the laser (step S102). Thereafter, the imaging device unit 3 displays the acquired image data on the display device, for example.
這樣,本實施方式的坩堝測量方法在照明光的照射下,測量氧化矽玻璃坩堝1的厚度方向的各位置處的散射狀況。其結果,能夠基於該測量的結果,把握氧化矽玻璃坩堝1的厚度方向的層構造。 As described above, the flaw measurement method of the present embodiment measures the scattering state at each position in the thickness direction of the tantalum oxide glass crucible 1 under irradiation of illumination light. As a result, the layer structure in the thickness direction of the cerium oxide glass crucible 1 can be grasped based on the result of the measurement.
圖16表示氧化矽玻璃坩堝1的內表面(或者端面)與照明部4之間的距離和測量雷射散射狀況的容易度的關係。具體地,圖16的(A)表示氧化矽玻璃坩堝1的內表面與照明部4之間的距離是100mm的情況,圖16的(B)表示氧化矽玻璃坩堝1的內表面與照明部4之間的距離是300mm的情況。另外,圖16的(C)表示氧化矽玻璃坩堝1的內表面與照明部4之間的距離是500mm的情況。 Fig. 16 shows the relationship between the distance between the inner surface (or end surface) of the yttrium oxide glass crucible 1 and the illumination portion 4 and the easiness of measuring the laser scattering condition. Specifically, (A) of FIG. 16 shows a case where the distance between the inner surface of the yttrium oxide glass crucible 1 and the illumination portion 4 is 100 mm, and (B) of FIG. 16 shows the inner surface of the yttrium oxide glass crucible 1 and the illumination portion 4. The distance between them is 300mm. In addition, (C) of FIG. 16 shows a case where the distance between the inner surface of the yttrium oxide glass crucible 1 and the illumination unit 4 is 500 mm.
如在圖16中表示,可知在所使用的雷射光源2和照明部4中,當氧化矽玻璃坩堝1的內表面與照明部4之間的距離分離500mm左右時能夠最明確地測量雷射的散射狀況。這樣,通過調整氧化矽玻璃坩堝1的內表面與照明部4之間的距離,能夠更明確地測量射入雷射的散射狀況。即,優選照明部4被調整成,其與氧化矽玻璃坩堝1的內表面之間的距離成為預定的規定距離(例如,500mm)。另外,認為氧化矽玻璃坩堝1與照明部4之間的適當距離例如能夠根據照明部4照射所照射的光強度等而變化。因此,上述預定的規定距離是根據需要能夠調整的距離。 As shown in FIG. 16, it can be seen that in the laser light source 2 and the illumination unit 4 used, the laser can be measured most clearly when the distance between the inner surface of the yttrium-glass diaphragm 1 and the illumination unit 4 is separated by about 500 mm. Scattering condition. Thus, by adjusting the distance between the inner surface of the yttrium oxide glass crucible 1 and the illuminating portion 4, the scattering state of the incident laser can be more clearly measured. That is, it is preferable that the illumination unit 4 is adjusted such that the distance from the inner surface of the yttrium-glass diaphragm 1 becomes a predetermined predetermined distance (for example, 500 mm). Further, it is considered that an appropriate distance between the yttrium-glass iridium 1 and the illuminating unit 4 can be changed, for example, depending on the intensity of light to be irradiated by the illuminating unit 4 or the like. Therefore, the predetermined predetermined distance described above is a distance that can be adjusted as needed.
本實施方式的坩堝測量裝置和測量方法與在第一實施方式中說明了的情況相同,能夠採用除此之外的各種結構。例如,組合上述線性雷射或交叉線性雷射等(光射出部)和照明部4也是有效的。特別是,例如通過在照明部4的藍色照明光的照明下射出紅色雷射,能夠將散射的部分測量為紫色,能夠更明確地測量散射狀況。 The flaw measuring device and the measuring method of the present embodiment are the same as those described in the first embodiment, and various other configurations can be employed. For example, it is also effective to combine the linear laser or the cross-linear laser (light emitting portion) and the illumination portion 4 described above. In particular, for example, by emitting a red laser under the illumination of the blue illumination light of the illumination unit 4, the scattered portion can be measured as purple, and the scattering condition can be measured more clearly.
當利用旋轉模具法製造氧化矽玻璃坩堝1時,經過在上述照明光的照明下測量氧化矽玻璃坩堝1的厚度方向的各位置處的散射狀況的程序,能夠更容易地製造並實現優選的氧化矽玻璃坩堝1。 When the yttrium oxide glass crucible 1 is produced by the rotary die method, it is possible to more easily manufacture and realize preferred oxidation by measuring the scattering state at each position in the thickness direction of the yttrium oxide glass crucible 1 under the illumination of the illumination light.矽 Glass 坩埚 1.
下面,參照圖17至圖21說明本發明的第三實施方式。圖17是本實施 方式的坩堝測量裝置的結構的一個示例。圖18是表示本實施方式的坩堝測量裝置測量拉曼光譜的位置的一個示例的圖。圖19是表示第三實施方式涉及的坩堝測量方法的流程的一個示例的流程圖。圖20以及圖21是實際測量出的拉曼光譜的一個示例。 Next, a third embodiment of the present invention will be described with reference to Figs. 17 to 21 . Figure 17 is the present embodiment An example of the structure of the 坩埚 measuring device. FIG. 18 is a view showing an example of a position at which the sputum measuring device of the present embodiment measures a Raman spectrum. 19 is a flow chart showing an example of a flow of a flaw measurement method according to the third embodiment. 20 and 21 are examples of actually measured Raman spectra.
在本實施方式中,說明通過測量拉曼光譜(測量拉曼散射)來測量氧化矽玻璃坩堝1的厚度方向的雷射的散射狀況的坩堝測量裝置。另外,說明利用上述裝置進行的坩堝測量方法。 In the present embodiment, a flaw measuring device that measures the scattering state of the laser beam in the thickness direction of the yttrium oxide glass crucible 1 by measuring the Raman spectrum (measured Raman scattering) will be described. In addition, a method of measuring enthalpy by the above apparatus will be described.
參照圖17,本實施方式的坩堝測量裝置例如具有雷射部21(光射出部)和拉曼分光測量部31(散射狀況測量部)。另外,拉曼分光測量部31例如具有瑞利光除去濾波器311、分光器312以及檢測器313。 Referring to Fig. 17, the flaw measuring device of the present embodiment includes, for example, a laser portion 21 (light emitting portion) and a Raman spectrometry portion 31 (scattering condition measuring portion). Further, the Raman spectrometry unit 31 includes, for example, a Rayleigh light removing filter 311, a spectroscope 312, and a detector 313.
雷射部21例如是半導體雷射或固體雷射等,構成為從氧化矽玻璃坩堝1的端面方向朝向氧化矽玻璃坩堝1的端面,對該氧化矽玻璃坩堝1的厚度方向的各位置射出單色雷射(例如,520nm的綠色雷射)。即,如圖17所示,雷射部21對氧化矽玻璃坩堝1的端面,一邊沿著該氧化矽玻璃坩堝1的厚度方向移動射出位置一邊射出雷射。由此,如後述那樣,分別測量氧化矽玻璃坩堝1的厚度方向的各位置的拉曼光譜。 The laser beam portion 21 is, for example, a semiconductor laser or a solid laser beam, and is configured to emit a single sheet from the end surface direction of the bismuth oxide glass crucible 1 toward the end surface of the bismuth oxide glass crucible 1 in the thickness direction of the bismuth oxide glass crucible 1. Color laser (for example, a green laser at 520 nm). That is, as shown in FIG. 17, the laser beam 21 emits a laser beam toward the end surface of the yttria glass crucible 1 while moving the emission position along the thickness direction of the yttria glass crucible 1. Thereby, the Raman spectrum of each position in the thickness direction of the yttrium oxide glass crucible 1 was measured as follows.
拉曼分光測量部31如上述那樣,具有瑞利光除去濾波器311、分光器312以及檢測器313。 As described above, the Raman spectrometry unit 31 includes the Rayleigh light removing filter 311, the spectroscope 312, and the detector 313.
瑞利光除去濾波器311是用於除去散射光中所含的波長與射出的雷射相同的光即除去瑞利散射的濾波器。雷射部21射出的雷射在射入氧化矽玻璃坩堝1的端面後,產生散射光。該散射光中,除了作為測量對象的拉曼散射光(斯托克斯(Stokes)、反斯托克斯(Anti-Stokes),也可以是其中之一)之外,還包括瑞利散射光。因此,利用瑞利光除去濾波器31來除去瑞利散射光。 The Rayleigh light removing filter 311 is a filter for removing Rayleigh scattering, that is, light having the same wavelength as that of the emitted laser light, which is included in the scattered light. The laser beam emitted from the laser beam 21 is incident on the end face of the yttrium oxide glass crucible 1 to generate scattered light. In addition to Raman scattered light (Stokes, Anti-Stokes, which may be one of them), Rayleigh scattered light is included in the scattered light. . Therefore, the Rayleigh light removing filter 31 is used to remove Rayleigh scattered light.
接著,通過瑞利光除去濾波器311的光射入分光器312。從而,通過分光器312,來對除去瑞利散射光後的散射光進行分光。之後,利用檢測器313,按照每個波長來檢測分光出的光。通過這樣的結構,本實施方式的坩 堝測量裝置測量氧化矽玻璃坩堝1的厚度方向的各位置處的散射狀況。另外,檢測器313例如與未圖示的信息處理裝置連接,通過該信息處理裝置,能夠算出與檢測到的光對應的拉曼位移值。由此,能夠測量拉曼光譜。即,能夠測量拉曼散射。 Next, the light passing through the Rayleigh light removing filter 311 is incident on the beam splitter 312. Thereby, the scattered light from which the Rayleigh scattered light is removed is split by the spectroscope 312. Thereafter, the detector 313 detects the split light for each wavelength. With such a configuration, the 本 of the present embodiment The helium measuring device measures the scattering state at each position in the thickness direction of the yttrium oxide glass crucible 1. Further, the detector 313 is connected to, for example, an information processing device (not shown), and the information processing device can calculate a Raman shift value corresponding to the detected light. Thereby, the Raman spectrum can be measured. That is, Raman scattering can be measured.
另外,用於測量上述拉曼光譜的結構至多是一個示例。也可以構成為利用上述結構以外的其他結構,來測量氧化矽玻璃坩堝1的厚度方向的各位置的拉曼光譜。 In addition, the structure for measuring the above Raman spectrum is at most an example. It is also possible to measure the Raman spectrum at each position in the thickness direction of the yttrium oxide glass crucible 1 by using a structure other than the above-described structure.
這樣,本實施方式的坩堝測量裝置具有雷射部21和拉曼分光測量部31。通過這樣的結構,獲取氧化矽玻璃坩堝1的端面的、該氧化矽玻璃坩堝1的厚度方向的各位置的拉曼光譜。即,如圖18所示,以照到氧化矽玻璃坩堝1的厚度方向的各位置的方式來調整雷射部21的位置,獲取氧化矽玻璃坩堝1的厚度方向的各位置的拉曼光譜。 As described above, the flaw measuring device of the present embodiment includes the laser portion 21 and the Raman spectrometry portion 31. With such a configuration, the Raman spectrum of each position in the thickness direction of the yttrium oxide glass crucible 1 on the end face of the yttrium oxide glass crucible 1 is obtained. In other words, as shown in FIG. 18, the position of the laser portion 21 is adjusted so as to be at each position in the thickness direction of the yttrium-glass glass crucible 1, and the Raman spectrum at each position in the thickness direction of the yttrium-glass iridium 1 is obtained.
在此,可知在氧化矽玻璃的拉曼光譜中,測量出以歸屬於平面四元環的峰值和歸屬於平面三元環的峰值為代表的多個峰值。因此,上述氧化矽玻璃坩堝1的端面的厚度方向的各位置的拉曼光譜也同樣地具有包括歸屬於平面四元環的峰值和歸屬於平面三元環的峰值在內的多個峰值。另一方面,如果實際進行測量,則在氧化矽玻璃坩堝1的厚度方向的各位置,有時各峰值的拉曼位移的值會存在偏差。即,在氧化矽玻璃坩堝1的厚度方向有時會包括多個構造,如上述那樣,通過在氧化矽玻璃坩堝1的厚度方向的各位置進行拉曼測量,能夠測量上述多個構造。 Here, it is understood that in the Raman spectrum of the yttrium oxide glass, a plurality of peaks represented by a peak attributed to the planar four-membered ring and a peak attributed to the planar three-membered ring are measured. Therefore, the Raman spectrum at each position in the thickness direction of the end face of the above-described yttrium-tantalum glass crucible 1 also has a plurality of peaks including a peak attributed to the planar four-membered ring and a peak attributed to the planar three-membered ring. On the other hand, if the measurement is actually performed, the value of the Raman shift of each peak may vary at each position in the thickness direction of the yttrium oxide glass crucible 1 . In other words, a plurality of structures may be included in the thickness direction of the yttrium-glass iridium 1 , and as described above, the plurality of structures can be measured by performing Raman measurement at each position in the thickness direction of the yttrium-glass iridium 1 .
另外,當測量拉曼光譜時在氧化矽玻璃坩堝1的厚度方向的各位置拉曼位移不同的情況下,氧化矽玻璃坩堝1的厚度方向的構造是不同的,利用該氧化矽玻璃坩堝1進行單晶矽提拉時易於引起歪曲。相反,在氧化矽玻璃坩堝1的厚度方向的各位置測量拉曼光譜,在氧化矽玻璃坩堝1的厚度方向的各位置判別拉曼位移相同(差小)的氧化矽玻璃坩堝1,能夠判別難以裂縫的(沒有裂縫的)氧化矽玻璃坩堝1。這樣,作為判別難以裂縫的氧化矽玻璃坩堝1的方法之一,也可以使用拉曼光譜的測量。另外,當測量拉曼光譜來判別難以裂縫的氧化矽玻璃坩堝1時,例如,在光透射層或光散射層內(也可以在透明層或含氣泡層內)確認拉曼位移是否相同,或 者確認厚度方向整體的拉曼位移是否相同。 Further, when the Raman spectrum is measured, when the Raman shifts at different positions in the thickness direction of the yttrium-glass lanthanum 1 are different, the structure in the thickness direction of the yttrium-glass yttrium 1 is different, and the yttrium oxide glass crucible 1 is used. When the single crystal crucible is pulled, it is easy to cause distortion. On the other hand, the Raman spectrum is measured at each position in the thickness direction of the yttrium-glass iridium 1 and the yttrium oxide glass yt 1 having the same Raman shift (small difference) is discriminated at each position in the thickness direction of the yttrium-glass yttrium 1 Cracked (no crack) yttrium oxide glass 坩埚1. Thus, as one of the methods for determining the bismuth oxide glass crucible 1 which is difficult to crack, measurement of Raman spectroscopy can also be used. In addition, when the Raman spectrum is measured to discriminate the bismuth oxide glass crucible 1 which is difficult to crack, for example, whether the Raman shift is the same in the light transmitting layer or the light scattering layer (which may also be in the transparent layer or the bubble containing layer), or It is confirmed whether or not the Raman shift of the entire thickness direction is the same.
另外,也可以構成為,同時進行在第一實施方式以及第二實施方式中說明了的雷射的散射狀況的測量和在本實施方式中說明的拉曼光譜的測量(或者,基於雷射的散射狀況的測量結果來測量拉曼光譜(拉曼散射))。具體地,例如進行從氧化矽玻璃坩堝1的內側射出的雷射的散射狀況的測量,對於通過該雷射的散射狀況的測量而判斷為是不同構造的各層,在雷射的散射狀況的測量中照射拉曼激發用的雷射。之後,在停止了散射測量用的雷射後(在通過照明部4照射照明光的情況下,還停止了照明光的照射後),進行拉曼測量。即,基於雷射的散射狀況的測量結果來把握光透射層和光散射層,基於該把握結果,對光透射層或光散射層、光透射層與光散射層的邊界附近等來測量拉曼光譜。通過組合這樣的兩種方法來進行測量,能夠容易且更高精度地把握氧化矽玻璃坩堝1在厚度方向的層構造。另外,在散射測量用的雷射(通過雷射光源2射出的雷射)和拉曼測量用的雷射(通過雷射部21射出的雷射)中,優選利用波長不同的雷射。 Further, the measurement of the scattering state of the laser described in the first embodiment and the second embodiment and the measurement of the Raman spectrum described in the present embodiment (or laser-based measurement) may be simultaneously performed. The measurement of the scattering condition is used to measure the Raman spectrum (Raman scattering). Specifically, for example, measurement of the scattering state of the laser beam emitted from the inside of the yttrium-glass iridium 1 is performed, and it is determined that the scattering state of the laser is measured for each layer of a different structure by measurement of the scattering state of the laser beam. Laser for medium-irradiation Raman excitation. Thereafter, after the laser for scattering measurement is stopped (when the illumination light is irradiated by the illumination unit 4, the irradiation of the illumination light is also stopped), Raman measurement is performed. In other words, the light transmitting layer and the light scattering layer are grasped based on the measurement result of the scattering state of the laser, and based on the result of the determination, the Raman spectrum is measured for the light transmitting layer or the light scattering layer, the vicinity of the boundary between the light transmitting layer and the light scattering layer, and the like. . By performing measurement by combining these two methods, the layer structure of the yttrium oxide glass crucible 1 in the thickness direction can be easily and accurately grasped. Further, in the laser for scattering measurement (the laser emitted by the laser light source 2) and the laser for Raman measurement (the laser beam emitted by the laser portion 21), it is preferable to use a laser having a different wavelength.
接著,說明利用上述坩堝測量裝置來進行的坩堝測量方法。 Next, a method of measuring the flaw by the above-described helium measurement device will be described.
參照圖19,首先雷射部21從氧化矽玻璃坩堝1的端面方向朝向氧化矽玻璃坩堝1的端面,射出雷射(S301)。雷射部21射出的雷射在射入氧化矽玻璃坩堝1的端面後,產生散射光。因此,當除去瑞利光後,進行分光,按照每個波長檢測分光後的光。例如,通過這樣的方法,來測量拉曼散射(S302)。 Referring to Fig. 19, first, the laser portion 21 emits a laser beam from the end surface direction of the beryllium glass crucible 1 toward the end surface of the beryllium glass crucible 1 (S301). The laser beam emitted from the laser beam 21 is incident on the end face of the yttrium oxide glass crucible 1 to generate scattered light. Therefore, when Rayleigh light is removed, splitting is performed, and the split light is detected for each wavelength. For example, Raman scattering is measured by such a method (S302).
之後,確認雷射的射出點是否沿著氧化矽玻璃坩堝1的厚度方向發生錯位(S303)。在發生錯位的情況下,在使雷射的射出點沿著氧化矽玻璃坩堝1的厚度方向錯位的基礎上,再次測量拉曼散射(S303,“是”)。另一方面,在沒有錯位的情況下(在結束了厚度方向的測量的情況下),結束拉曼散射的測量(S303,“否”)。 Thereafter, it is confirmed whether or not the exit point of the laser is displaced in the thickness direction of the bismuth glass oxide crucible 1 (S303). In the case where a misalignment occurs, the Raman scattering is measured again (S303, YES), after the projection point of the laser is displaced along the thickness direction of the yttrium glass crucible 1. On the other hand, in the case where there is no misalignment (in the case where the measurement in the thickness direction is ended), the measurement of the Raman scattering is ended (S303, NO).
這樣,本實施方式的坩堝測量方法對氧化矽玻璃坩堝1在厚度方向的各位置進行拉曼散射的測量。其結果,基於該測量出的結果,能夠把握氧化矽玻璃坩堝1的厚度方向的層構造。 As described above, the ruthenium measurement method of the present embodiment measures the Raman scattering of each position of the yttria glass crucible 1 in the thickness direction. As a result, based on the result of the measurement, the layer structure in the thickness direction of the yttrium oxide glass crucible 1 can be grasped.
另外,當利用旋轉模具法來製造氧化矽玻璃坩堝1時,即便經過了進行上述拉曼測量的程序,也能夠製造並實現優選的氧化矽玻璃坩堝1。另外,即便是經過具有進行厚度方向的雷射測量和拉曼測量的步驟的氧化矽玻璃坩堝1的製造程序而製造出的氧化矽玻璃坩堝1,也能夠具有同樣的有益效果。 Further, when the yttrium oxide glass crucible 1 is produced by the rotary die method, a preferred bismuth oxide glass crucible 1 can be manufactured and realized even after the procedure for performing the Raman measurement described above. Further, the yttrium oxide glass crucible 1 manufactured by the manufacturing procedure of the yttria glass crucible 1 having the steps of performing the laser measurement and the Raman measurement in the thickness direction can have the same advantageous effects.
圖20以及圖21是實際測量氧化矽玻璃坩堝1的厚度方向的各位置的拉曼光譜的結果。圖20是測量與圖6和圖10同樣的氧化矽玻璃坩堝1的端面的、該氧化矽玻璃坩堝1的厚度方向的各位置的拉曼光譜的結果。圖21是測量與圖7和圖11同樣的氧化矽玻璃坩堝1的端面的、該氧化矽玻璃坩堝1的厚度方向的各位置的拉曼光譜的結果。 20 and 21 are results of actually measuring the Raman spectrum at each position in the thickness direction of the yttrium oxide glass crucible 1. Fig. 20 shows the results of measuring the Raman spectrum at each position in the thickness direction of the yttrium oxide glass crucible 1 on the end faces of the yttrium oxide glass crucible 1 similar to those in Figs. 6 and 10 . Fig. 21 shows the results of measuring the Raman spectrum at each position in the thickness direction of the yttrium oxide glass crucible 1 on the end faces of the yttrium oxide glass crucible 1 similar to those in Figs. 7 and 11 .
圖20和圖21的拉曼光譜從下向上按照順序表示拉曼測量在內表面側、內表面與中間的邊界、中間、中間與外表面側的邊界、外表面側的位置處的結果。另外,為了易於觀察,圖20以及圖21的拉曼光譜的結果被修正成各結果不重合。因此,在下面,僅將拉曼位移的值作為問題,強度不可見。 The Raman spectrum of Figs. 20 and 21 shows, in order from the bottom to the bottom, the results of the Raman measurement at the inner surface side, the inner surface and the middle boundary, the middle, the intermediate and outer surface side boundaries, and the outer surface side. Further, for easy observation, the results of the Raman spectra of FIGS. 20 and 21 were corrected so that the results did not overlap. Therefore, in the following, only the value of the Raman shift is taken as a problem, and the intensity is not visible.
參照圖20,可知在歸屬於平面四元環的峰值(488cm-1附近的峰值)中,內表面側以及內表面與中間的邊界的測量結果、中間、中間與外表面側的邊界、外表面側的測量結果存在較大差異。如圖6和圖10所示,測量圖20後的氧化矽玻璃坩堝1具有光透射層和光散射層,是判斷為光散射層由單層構造構成的層。根據上述結構,能夠認為拉曼測量的結果和氧化矽玻璃坩堝1的厚度方向的散射狀況的測量結果存在一定的相關關係。即,內表面側以及內表面與中間的邊界的測量結果表示光透射層,中間、中間與外表面側的邊界、外表面側的測量結果表示光散射層。這樣,可知基於拉曼測量的結果,能夠把握氧化矽玻璃坩堝1的厚度方向的層構造。 Referring to Fig. 20, in the peak (the peak near 488 cm -1 ) attributed to the planar quaternary ring, the measurement results of the inner surface side and the inner surface and the intermediate boundary, the boundary between the middle, the intermediate and outer surface sides, and the outer surface are known. There are large differences in the measurement results on the side. As shown in FIGS. 6 and 10, the iridium oxide glass crucible 1 after the measurement of FIG. 20 has a light transmitting layer and a light scattering layer, and is a layer which is determined to have a light scattering layer composed of a single layer structure. According to the above configuration, it can be considered that there is a certain correlation between the result of the Raman measurement and the measurement result of the scattering state in the thickness direction of the yttria glass crucible 1. That is, the measurement results of the inner surface side and the inner surface and the intermediate boundary indicate the light transmission layer, and the measurement results of the boundary between the middle, the middle, and the outer surface side and the outer surface side indicate the light scattering layer. As described above, it is understood that the layer structure in the thickness direction of the yttrium oxide glass crucible 1 can be grasped based on the result of the Raman measurement.
另外同樣地,在圖21中,可知在歸屬於平面四元環的峰值(488cm-1附近的峰值)以及歸屬於平面三元環的峰值(602cm-1附近的峰值)中,各邊界(內表面與中間的邊界,中間與外表面側的邊界)的拉曼位移的值可以觀察到偏差。如圖7和圖11所示,測量圖21後的氧化矽玻璃坩堝1具有光透射層和光散射層,判斷為光散射層由多層構成。從這些情況也可以知曉, 拉曼測量的結果和氧化矽玻璃坩堝1的厚度方向的散射狀況的測量結果也存在一定的相關關係。 Further Similarly, in FIG. 21, seen in the peak attributable to the planar four-membered ring (488cm -1 near the peak) and a peak attributed to (602cm -1 near the peak) in the three-membered ring plane, each boundary (the The value of the Raman shift of the boundary between the surface and the middle, the boundary between the middle and the outer surface can be observed as a deviation. As shown in FIGS. 7 and 11, the yttria glass crucible 1 after the measurement of FIG. 21 has a light transmitting layer and a light scattering layer, and it is judged that the light scattering layer is composed of a plurality of layers. It is also known from these cases that there is a certain correlation between the results of the Raman measurement and the measurement results of the scattering state in the thickness direction of the yttrium oxide glass.
另外,表2表示對具有上述多個界面的氧化矽玻璃坩堝1的各個點(內表面側、界面1、以界面1為邊界位於內表面側外側的中間、界面2、外表面側)的拉曼光譜進行測量的結果的一個示例。在表2中,表示上述各個點的歸屬於平面四元環的峰值(488cm-1附近的峰值)以及歸屬於平面三元環的峰值(602cm-1附近的峰值)的一個示例。 In addition, Table 2 shows the pulling of the respective points (the inner surface side, the interface 1, the outer side of the inner surface side, the interface 2, and the outer surface side on the inner surface side with the interface 1 as a boundary) having the above-described plurality of interfaces. An example of the results of the measurement performed by the Mann spectrum. In Table 2, an example of the peak (the peak near 488 cm -1 ) belonging to the planar quaternary ring and the peak attributed to the planar three-membered ring (the peak near 602 cm -1 ) of each of the above points is shown.
表3表示上述氧化矽玻璃坩堝1的情況,可知以各界面(界面1、界面2)為邊界,在內表面側、中間、外表面側各個構造是不同的。即,可知上述氧化矽玻璃坩堝1以各界面為邊界,具有厚度方向的多個層構造,可知是裂痕難以擴展的沒有裂縫的氧化矽玻璃坩堝1。 Table 3 shows the case of the above-described yttria glass crucible 1, and it is understood that the respective structures on the inner surface side, the intermediate portion, and the outer surface side are different at the respective interfaces (interface 1, interface 2). In other words, it is understood that the yttrium oxide glass crucible 1 has a plurality of layer structures in the thickness direction at the boundary of each interface, and it is understood that the yttrium oxide glass crucible 1 having no cracks is difficult to spread.
上面,參照上述實施方式說明了本申請的發明,但是本申請的發明不限於上述實施方式。本申請的發明的結構或詳細內容在本申請的發明的範圍內能夠進行本領域技術人員能夠理解的各種變更。 Hereinabove, the invention of the present application has been described with reference to the above embodiments, but the invention of the present application is not limited to the above embodiments. The configuration and details of the invention of the present application can be variously modified by those skilled in the art within the scope of the invention of the present application.
1‧‧‧氧化矽玻璃坩堝 1‧‧‧Oxide glass
2‧‧‧雷射光源 2‧‧‧Laser light source
3‧‧‧拍攝裝置部 3‧‧‧Photographing Department
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PCT/JP2016/001613 WO2017158655A1 (en) | 2016-03-18 | 2016-03-18 | Crucible measurement device, crucible measurement method, and crucible production method |
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Cited By (2)
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TWI736890B (en) * | 2018-05-17 | 2021-08-21 | 日商Sumco股份有限公司 | Method and device for measuring transmittance of quartz crucible |
CN119164315A (en) * | 2024-11-25 | 2024-12-20 | 成都思越智能装备股份有限公司 | A plate-shaped product carrier deformation detection device and detection method |
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CN110938871B (en) * | 2019-12-31 | 2024-05-31 | 江西中材新材料有限公司 | Polycrystalline silicon ingot casting equipment and polycrystalline silicon ingot casting method |
CN118209540B (en) * | 2024-05-22 | 2024-08-16 | 浙江康鹏半导体有限公司 | Gallium arsenide monocrystal growth state detection method and device |
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JP2631321B2 (en) * | 1989-10-31 | 1997-07-16 | 信越石英株式会社 | Silica glass crucible for pulling silicon single crystal |
JP5808667B2 (en) * | 2011-12-27 | 2015-11-10 | 株式会社Sumco | Method for measuring three-dimensional shape of silica glass crucible |
KR101856091B1 (en) * | 2013-12-28 | 2018-05-09 | 가부시키가이샤 섬코 | Quartz glass crucible and strain measurement device therefor |
JP6336867B2 (en) * | 2014-09-22 | 2018-06-06 | 株式会社Sumco | Crucible measuring device |
JP6405828B2 (en) * | 2014-09-22 | 2018-10-17 | 株式会社Sumco | Crucible measurement method |
JP2016064932A (en) * | 2014-09-22 | 2016-04-28 | 株式会社Sumco | Silica glass crucible |
JP6405827B2 (en) * | 2014-09-22 | 2018-10-17 | 株式会社Sumco | Method for producing silica glass crucible |
-
2016
- 2016-03-18 WO PCT/JP2016/001613 patent/WO2017158655A1/en active Application Filing
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Cited By (3)
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TWI736890B (en) * | 2018-05-17 | 2021-08-21 | 日商Sumco股份有限公司 | Method and device for measuring transmittance of quartz crucible |
US11703452B2 (en) | 2018-05-17 | 2023-07-18 | Sumco Corporation | Method and apparatus for measuring transmittance of quartz crucible |
CN119164315A (en) * | 2024-11-25 | 2024-12-20 | 成都思越智能装备股份有限公司 | A plate-shaped product carrier deformation detection device and detection method |
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