TW201728411A - Chemical mechanical polishing dresser and manufacturing method thereof capable of elaborating the effect of offsetting thermal stress to reduce the warp and deformation of the supporting layer - Google Patents

Abstract

This invention relates to a chemical mechanical polishing dresser, comprising a substrate and at least a polishing unit. The polishing unit is disposed on the substrate and comprises a supporting layer, a polishing layer, and a stress offsetting layer. The supporting layer has a working surface away from the substrate and a non-working surface opposite to the working surface. The polishing layer is disposed to the working surface of the supporting layer and is a first diamond coating formed by utilizing chemical vapor deposition method which has a plurality of polishing tips. The stress offsetting layer is disposed to the non-working surface of the supporting layer and is a second diamond coating formed by utilizing chemical vapor deposition method. The stress offsetting layer can elaborate the effect of offsetting thermal stress to reduce the warp and deformation of the supporting layer.

Description

Chemical mechanical polishing dresser and manufacturing method thereof

The invention relates to a chemical mechanical polishing dresser and a manufacturing method thereof, in particular to a chemical mechanical polishing dresser with good flatness and a manufacturing method thereof.

Chemical Mechanical Polishing (CMP) is a flattening technology widely used in semiconductor manufacturing. A common chemical mechanical polishing process uses a polishing pad (or polishing pad) fixed to a rotating table to contact and apply. The crucible wafer is carried on a spin-on carrier. During the grinding, the carrier and the rotary table will rotate and provide a polishing slurry to the polishing pad. In general, the debris and abrasive slurry caused by the grinding will accumulate in the holes in the polishing pad, causing the polishing pad to wear out and causing the polishing effect on the wafer to be reduced. Therefore, it is necessary to use a Conditioner. Remove debris and abrasive slurry from the polishing pad.

A conventional dresser can be found in U.S. Patent No. 6,872,127, which discloses a polishing dressing pad for chemical mechanical polishing. In one embodiment, it is disclosed that it comprises a rigid and non-brittle substrate, a plurality of substrates. The material extends and is arranged in a matrix of pyramid-shaped protrusions, a plurality of grooves extending along the protrusions, a seed layer disposed on the protrusions, and a contact layer disposed on the seed layer. The substrate may be made of stainless steel, and the seed layer may be titanium nitride, and the contact layer may be a chemical vapor deposited diamond film. In addition, the invention also discloses a chemical mechanical polishing dresser comprising a substrate and an abrasive layer, the abrasive layer comprising a plurality of grinding units, and a manufacturing method thereof. Wherein the polishing layer is a chemical vapor deposited diamond material, and the polishing units have one or a plurality of grooves, a vertex, and a slope formed between each groove and the vertex, and the The grinding unit is a tapered outer shape or a cylindrical outer shape.

In the above prior art, the diamond film is deposited by a chemical vapor deposition process, and the process temperature is several hundred degrees. When the temperature is lowered, the substrate has warpage due to the difference in thermal expansion coefficient between the diamond film and the substrate. Or deformation, which affects the flatness of the diamond film, so there is still room for improvement.

The main object of the present invention is to solve the problem of poor chemical flatness of a diamond film by a chemical mechanical polishing dresser for depositing a diamond film by a chemical vapor deposition process.

In order to achieve the above object, the present invention provides a chemical mechanical polishing conditioner comprising a substrate; and at least one polishing unit disposed on the substrate, the polishing unit respectively comprising a support layer having a working surface away from the substrate and a a non-working surface opposite to the working surface; an abrasive layer disposed on the working surface of the supporting layer, the polishing layer being a first diamond coating formed by chemical vapor deposition, the first diamond coating having a plurality of And a stress-repellent layer disposed on the non-working surface of the support layer, the stress-relief layer being a second diamond coating formed by chemical vapor deposition.

In an embodiment of the invention, the substrate has at least one recess for receiving the polishing unit.

In an embodiment of the invention, the substrate has at least one through hole for receiving the polishing unit.

In an embodiment of the invention, the substrate is a planar substrate.

In one embodiment of the invention, the substrate is selected from the group consisting of a stainless steel substrate, a mold steel substrate, a metal alloy substrate, a ceramic substrate, and a polymer substrate.

In an embodiment of the invention, the material of the support layer is tantalum or tantalum carbide.

In an embodiment of the present invention, the working surface of the support layer is formed by a processing process to form a plurality of protruding tips, and the polishing layer is coated on the working surface of the supporting layer to have the corresponding protruding tip. Grinding the tip.

In an embodiment of the invention, the first diamond coating forms the polishing tip using a processing process.

In one embodiment of the invention, the processing process is selected from the group consisting of wheel grinding, laser processing, electrical discharge machining, dry etching, and dry etching.

In an embodiment of the invention, a bonding layer is further disposed between the substrate and the polishing unit.

In an embodiment of the invention, the material of the bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials.

In one embodiment of the invention, the brazing material is selected from the group consisting of iron, cobalt, nickel, chromium, manganese, cerium, and aluminum.

In one embodiment of the invention, the polymeric material is selected from the group consisting of epoxy resins, polyester resins, polyacrylic resins, and phenolic resins.

To achieve the above object, the present invention also provides a method of manufacturing a chemical mechanical polishing conditioner, comprising the steps of:

Step S1: providing a support layer having a working surface and a non-working surface opposite to the working surface;

Step S2: a polishing layer and a stress-repellent layer are respectively disposed on the working surface and the non-working surface of the supporting layer by chemical vapor deposition, and the polishing layer and the stress canceling layer are each a first diamond coating And a second diamond coating having a plurality of polishing tips;

Step S3: bonding at least one of the support layers to a substrate.

In an embodiment of the present invention, in step S2, the polishing layer is formed on the working surface of the supporting layer, and the stress canceling layer is formed on the non-working surface of the supporting layer.

In an embodiment of the present invention, in step S2, a plurality of protruding tips are formed on the working surface of the supporting layer by a processing process, and the polishing layer is formed on the working surface to make the first diamond coating. There is a grinding tip corresponding to the protruding tip.

In an embodiment of the present invention, in step S2, the polishing layer is disposed on the working surface of the support layer, and the polishing tip is formed on the first diamond coating by a processing process.

In one embodiment of the invention, the processing process is selected from the group consisting of wheel grinding, laser processing, electrical discharge machining, dry etching, and dry etching.

In an embodiment of the invention, the substrate has at least one recess for receiving the polishing unit.

In an embodiment of the invention, the substrate has at least one through hole for receiving the polishing unit.

In an embodiment of the invention, the substrate is a planar substrate.

In one embodiment of the invention, the substrate is selected from the group consisting of a stainless steel substrate, a mold steel substrate, a metal alloy substrate, a ceramic substrate, and a polymer substrate.

In an embodiment of the invention, the material of the support layer is tantalum or tantalum carbide.

In summary, the effect of the present invention is that the first diamond coating and the second diamond coating are respectively formed on both sides of the supporting layer, as the polishing layer and the stress canceling layer, respectively. In this way, when the chemical vapor deposition process is performed and the temperature is cooled from high temperature to low temperature, the deformation forces on both sides of the support layer will be equal, and the deformation of the support layer can be reduced. In other words, the stress offset layer is exerted. The effect of offsetting thermal stress.

The detailed description and technical content of the present invention will now be described as follows:

Referring to FIG. 1 and FIG. 2, which are schematic cross-sectional views of a first embodiment and a second embodiment of the present invention, the chemical mechanical polishing dresser of the present invention comprises a substrate 10 and at least one polishing unit 20, which The polishing unit 20 is disposed on the substrate 10, and the polishing unit 20 includes a support layer 21, an abrasive layer 22 and a stress relief layer 23. The support layer 21 has a working surface 211 and a non-working surface 212. The working surface 211 is located on a side away from the substrate 10 and is used to carry the polishing layer 22, and the non-working surface 212 and the working surface 211 are opposite to each other. The polishing layer 22 and the stress canceling layer 23 are respectively a first diamond coating and a second diamond coating formed by chemical vapor deposition, wherein the polishing layer 22 is disposed on the working surface 211 of the supporting layer 21 . And having a plurality of polishing tips 221 disposed on the non-working surface 212 of the support layer 21. In this embodiment, the chemical mechanical polishing conditioner further includes a bonding layer 30 disposed between the substrate 10 and the polishing unit 20 for bonding the polishing unit 20 to the substrate 10. Further, in the first embodiment, as shown in FIG. 1, the number of the polishing units 20 is one, and in the second embodiment, as shown in FIG. 2, the number of the polishing units 20 is plural. One.

Next, the manufacturing method of the chemical mechanical polishing conditioner of the present invention will be described. Referring to FIGS. 3A to 3F, a schematic diagram of a manufacturing process according to an embodiment of the present invention will be described. As shown in FIG. 3A, a support layer 21 is first provided, which is made of tantalum or tantalum carbide; then, a first diamond coating is deposited on a working surface 211 of the support layer 21 by chemical vapor deposition (ie, An abrasive layer 22) consisting of a polycrystalline diamond material having a rough upper surface 22a as shown in FIG. 3B; followed by mechanical or chemical polishing and polishing The upper surface 22a is planarized so that the upper surface 22a has a flat surface, as shown in FIG. 3C. Thereafter, the polishing layer 22 which has been subjected to the planarization process is patterned by a processing process to form a plurality of Grinding tip 221, wherein the grinding tip 221 is preferably formed into a pyramid-shaped outer shape, such as "Fig. 3D", and the processing process can be wheel grinding, laser processing, electric discharge machining, dry etching or dry Etching and the like; then depositing a second diamond coating (ie, a stress canceling layer 23) on a non-working surface 212 of the support layer 21 by chemical vapor deposition, as shown in FIG. 3E; Bonding layer 30 to the polishing sheet 20 in combination with a substrate 10, the bonding layer 30 is provided between line 10 and the substrate 20 of the polishing unit, such as "in FIG. 3F."

Please refer to FIG. 4A to FIG. 4C for a schematic diagram of a manufacturing process according to another embodiment of the present invention. In another embodiment of the present invention, as shown in FIG. 4A, a support layer 21 is first provided, which is made of tantalum or tantalum carbide. The support layer 21 has a working surface 211 and a non-working surface 212. Then, A plurality of protruding tips 211a are formed on the working surface 211 of the supporting layer 21 by a processing process, as shown in FIG. 4B, wherein the protruding tips 211a are preferably formed into a pyramid-shaped outer shape. It can be a wheel grinding process, a laser process, an electric discharge process, a dry etching or a dry etching; afterwards, a first diamond coating film (ie, an abrasive layer 22) is formed on the working surface 211, so that the first diamond coating film has a plurality of polishing tips 221 corresponding to the protruding tips 211a, the polishing layer 22 is composed of a polycrystalline diamond material, as shown in FIG. 4C; the subsequent steps are the same as the previous embodiment, and reference may be made to FIG. 3E to FIG. 3F ′′, which will not be further described herein.

In the manufacturing process of the above embodiment, an intermediate layer may be disposed between the support layer 21 and the polishing layer 22 or/and the support layer 21 and the stress canceling layer 23, mainly considering the first The difference in expansion coefficient or lattice size between the diamond coating and the second diamond coating and the support layer 21 may result in insufficient adhesion strength of the polishing layer 22 or/and the stress canceling layer 23, resulting in peeling during the grinding process. Therefore, the intermediate layer can be formed on the working surface 211 or/and the non-working surface 212 of the support layer 21 by various methods such as physical or chemical vapor deposition, soldering or brazing. In the above embodiment, the first diamond coating is formed first, and the second diamond coating is formed as an example. However, the present invention is not limited thereto. In other embodiments, the second diamond coating may be formed first, and then formed. The first diamond coating is formed; or the first diamond coating and the second diamond coating may be simultaneously formed. In addition, the above embodiment is exemplified by the fact that the polishing tip 221 forms a pyramid-shaped outer shape with a tip top, but the invention is not limited thereto, and the polishing tip 221 may also form a flat top or according to the use requirement. Other shapes with abrasive capabilities.

In the present invention, the substrate 10 may be a stainless steel substrate, a mold steel substrate, a metal alloy substrate, a ceramic substrate or a polymer substrate, and the substrate 10 may have at least one recess for accommodating the polishing unit. 20, as shown in FIG. 1 or FIG. 2; or the substrate 10 may have a uniform hole to allow the polishing unit 20 to be accommodated therein; or the substrate 10 may be a planar substrate. In addition, the material of the bonding layer 30 may be a ceramic material, a brazing material, a plating material, a metal material or a polymer material, wherein the brazing material may be a metal of iron, cobalt, nickel, chromium, manganese, lanthanum or aluminum. Or an alloy, the polymer material may be an epoxy resin, a polyester resin, a polyacrylic resin or a phenolic resin.

To further verify the efficacy of the present invention, the first diamond coating is formed on the support layer 21 before the first diamond coating (the polishing layer 22) and the second diamond coating (the stress canceling layer 23) are not formed. The flatness after (the polishing layer 22) and after the first diamond coating (the polishing layer 22) and the second diamond coating (the stress canceling layer 23) are measured. First, referring to FIG. 5A to FIG. 5C, the support layer 21 has before the first diamond coating (the polishing layer 22) and the second diamond coating (the stress canceling layer 23) are not formed. Good and consistent flatness; please continue to refer to FIG. 6A to FIG. 6C. After forming the first diamond coating (the polishing layer 22), the supporting layer 21 has a convex shape with a concave edge and a concave shape. Deformation is apparent, which is a problem of the prior art; please refer to FIG. 7A to FIG. 7C again, as can be seen from the figure, the second diamond is formed further on the non-working surface 212 of the support layer 21. After the coating (the stress canceling layer 23), the problem of deformation of the support layer 21 in "Fig. 6A" is improved, and the support layer 21 exhibits good and uniform flatness, so that the problems of the prior art are indeed improved.

The effect of the present invention over the prior art is to form the first diamond coating and the second diamond coating on both sides of the support layer, respectively, as the polishing layer and the stress canceling layer, so that when When the chemical vapor deposition process is performed and cooled from high temperature to low temperature, the deformation forces on both sides of the support layer will be equal, and the deformation of the support layer can be reduced. In other words, the stress offset layer acts to offset the thermal stress. The effect.

The present invention has been described in detail above, but the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the invention. That is, the equivalent changes and modifications made by the scope of the present application should remain within the scope of the patent of the present invention.

10‧‧‧Substrate
20‧‧‧grinding unit
21‧‧‧Support layer
211‧‧‧Working face
211a‧‧ ‧ prominent tip
212‧‧‧Non-working face
22‧‧‧Abrasive layer
22a‧‧‧Upper surface
221‧‧‧ grinding tip
23‧‧‧ Stress offset layer
30‧‧‧Combination layer

Fig. 1 is a schematic cross-sectional view showing a first embodiment of the present invention. Fig. 2 is a schematic cross-sectional view showing a second embodiment of the present invention. 3A to 3F are schematic views showing a manufacturing process according to an embodiment of the present invention. 4A to 4C are schematic views showing a manufacturing process according to another embodiment of the present invention. 5A to 5C are flat measurement results of the support layer before the first diamond plating film and the second diamond plating film are formed, according to an embodiment of the present invention. 6A to 6C are flat measurement results of the support layer after forming the first diamond plating film according to an embodiment of the present invention. 7A to 7C are flat measurement results of the support layer after forming the first diamond plating film and the second diamond plating film according to an embodiment of the present invention.

10‧‧‧Substrate

20‧‧‧grinding unit

21‧‧‧Support layer

211‧‧‧Working face

212‧‧‧Non-working face

22‧‧‧Abrasive layer

221‧‧‧ grinding tip

23‧‧‧ Stress offset layer

30‧‧‧Combination layer

Claims (23)

A chemical mechanical polishing dresser comprising: a substrate; and at least one polishing unit disposed on the substrate, the polishing unit respectively comprising: a support layer having a working surface away from the substrate and a working surface opposite to the working surface a non-working surface; an abrasive layer disposed on the working surface of the support layer, the polishing layer being a first diamond coating formed by chemical vapor deposition, the first diamond coating having a plurality of polishing tips; and a The stress canceling layer is disposed on the non-working surface of the supporting layer, and the stress canceling layer is a second diamond coating formed by chemical vapor deposition. The chemical mechanical polishing conditioner according to claim 1, wherein the substrate has at least one recess for accommodating the polishing unit. The chemical mechanical polishing conditioner according to claim 1, wherein the substrate has at least one through hole for accommodating the polishing unit. The chemical mechanical polishing conditioner according to claim 1, wherein the substrate is a planar substrate. The chemical mechanical polishing conditioner according to claim 1, wherein the substrate is selected from the group consisting of a stainless steel substrate, a mold steel substrate, a metal alloy substrate, a ceramic substrate, and a polymer substrate. The chemical mechanical polishing conditioner according to claim 1, wherein the material of the support layer is tantalum or tantalum carbide. The chemical mechanical polishing conditioner according to claim 1, wherein the working surface of the supporting layer forms a plurality of protruding tips by a processing process, and the polishing layer is coated on the working surface of the supporting layer. There is a grinding tip corresponding to the protruding tip. The chemical mechanical polishing conditioner of claim 1, wherein the first diamond coating forms the polishing tip by a processing process. The chemical mechanical polishing conditioner according to claim 7 or 8, wherein the processing is selected from the group consisting of a wheel grinding process, a laser process, an electric discharge process, a dry process, and a dry process. The chemical mechanical polishing conditioner according to claim 1, further comprising a bonding layer disposed between the substrate and the polishing unit. The chemical mechanical polishing conditioner according to claim 10, wherein the material of the bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials. The chemical mechanical polishing conditioner according to claim 11, wherein the brazing material is selected from the group consisting of iron, cobalt, nickel, chromium, manganese, lanthanum and aluminum. The chemical mechanical polishing conditioner according to claim 11, wherein the polymer material is selected from the group consisting of an epoxy resin, a polyester resin, a polyacryl resin, and a phenol resin. A manufacturing method of a chemical mechanical polishing dresser comprises the following steps: Step S1: providing a supporting layer having a working surface and a non-working surface opposite to the working surface; Step S2: using chemical vapor deposition An abrasive layer and a stress relief layer are respectively disposed on the working surface and the non-working surface of the support layer, wherein the polishing layer and the stress canceling layer are each a first diamond coating and a second diamond coating, the first A diamond coating has a plurality of polishing tips; and step S3: bonding at least one of the support layers to a substrate. The method of manufacturing a chemical mechanical polishing conditioner according to claim 14, wherein in step S2, the polishing layer is formed on the working surface of the support layer, and then on the non-working surface of the support layer. The stress canceling layer is formed. The method for manufacturing a chemical mechanical polishing conditioner according to claim 14, wherein in step S2, a plurality of protruding tips are formed on the working surface of the supporting layer by a processing process, and then the working surface is formed on the working surface. The abrasive layer is formed such that the first diamond coating has the abrasive tip corresponding to the protruding tip. The method of manufacturing a chemical mechanical polishing conditioner according to claim 14, wherein in step S2, the polishing layer is disposed on the working surface of the support layer, and the first diamond coating is processed by a processing process. The grinding tip is formed. The method of manufacturing a chemical mechanical polishing conditioner according to claim 16 or 17, wherein the processing is selected from the group consisting of a wheel grinding process, a laser process, an electric discharge process, a dry process, and a dry process. The method of manufacturing a chemical mechanical polishing conditioner according to claim 14, wherein the substrate has at least one recess for accommodating the polishing unit. The method of manufacturing a chemical mechanical polishing conditioner according to claim 14, wherein the substrate has at least one through hole for accommodating the polishing unit. The method of manufacturing a chemical mechanical polishing conditioner according to claim 14, wherein the substrate is a planar substrate. The method of manufacturing a chemical mechanical polishing conditioner according to claim 14, wherein the substrate is selected from the group consisting of a stainless steel substrate, a mold steel substrate, a metal alloy substrate, a ceramic substrate, and a polymer substrate. The method of manufacturing a chemical mechanical polishing conditioner according to claim 14, wherein the material of the support layer is tantalum or tantalum carbide.