TW201703137A - Film forming apparatus, film forming method and substrate carrying table capable of forming a uniform film and forming the film only on a substrate - Google Patents

Abstract

The invention provides a film forming apparatus capable of forming a uniform film and forming the film only on a substrate, and also provides a substrate carrying table for the film forming apparatus. The film forming apparatus includes a substrate carrying table; a processing chamber for performing a film forming process on a substrate; and a processing gas supply mechanism. The substrate carrying table includes a carrying portion having an upper surface serving as a carrying surface for carrying the substrate; an outer peripheral ring arranged by surrounding an outer periphery of the carrying part; a first temperature adjusting part for adjusting the temperature of the carrying part to a first temperature capable of forming film by the processing gas; and a second temperature control part for adjusting the temperature of the outer peripheral ring to a second temperature incapable of forming film by the processing gas. A gap is provided between the carrying part and the outer peripheral ring by stretching across the whole periphery for providing the function of a heat insulation part. The carrying surface is formed to be smaller than the substrate. When the substrate is placed on the carrying surface, the gap is formed in such a manner that a protruding portion of the substrate stretches across the whole periphery to reach the outer peripheral ring.

Description

Film forming device, film forming method and substrate mounting table

The present invention relates to a film forming apparatus and a film forming method for supplying a processing gas to a substrate to form a film, and a substrate mounting table used in the film forming apparatus.

The organic material film is used for a sealing layer or the like used in an organic EL display device. When manufacturing such an organic material film, there is known a method in which an organic material is evaporated by a vaporizer or the like and supplied to a film forming chamber, and the vapor deposition is performed on the substrate to form an organic film (for example, a patent). Document 1).

[Previous Technical Literature]

[Patent Literature]

Patent Document 1: Japanese Patent No. 4283910

However, in the case where an organic material film is formed on a large-area substrate by vapor deposition polymerization, it is difficult to form a film uniformly. Moreover, since a film is formed in a portion other than the substrate in the processing chamber, there is a problem that the maintenance period is short.

The problem is not limited to the case where the organic material film is formed by vapor deposition polymerization, and there are many cases where the processing gas is supplied to the processing chamber to perform a film formation process.

Therefore, the present invention provides a film forming apparatus and a film forming method which can form a uniform film when a processing gas is supplied onto a substrate, and a film is formed only on the substrate, and a film forming apparatus. The substrate mounting table is a problem.

In order to solve the problem, the present invention provides a film forming apparatus including a substrate mounting table on which a substrate is placed, a processing chamber in which a substrate placed on the substrate mounting table is subjected to a film forming process, and a film forming process. a processing gas supply means for processing a gas to the processing chamber, and a film forming apparatus for performing a film forming process on the substrate on the substrate mounting table, the substrate mounting table having a mounting portion on which a substrate is placed a mounting surface; the outer circumferential ring is provided to surround the outer periphery of the mounting portion; and the first temperature regulating portion adjusts the mounting portion to a film that can be formed by the processing gas The first temperature and the second temperature adjustment unit adjust the temperature of the outer circumference to a second temperature at which the processing gas is not formed; and the mounting portion and the outer circumference ring are arranged across the entire circumference. a gap as a function of a heat insulating portion for suppressing heat exchange between the electrodes; the mounting surface of the mounting portion is formed to be smaller than the substrate, and the gap is when the substrate is placed on the mounting surface The substrate is formed by extending from the entire surface of the substrate to the outer peripheral ring.

Moreover, the present invention provides a substrate mounting table which is a substrate mounting table used for a film forming apparatus which supplies a processing gas to a substrate to form a film forming process, and has a mounting portion on which a mounting substrate is placed. The outer circumference ring is provided to surround the outer circumference of the mounting portion; the first temperature adjustment unit adjusts the mounting portion to a first temperature at which the processing gas can be formed; and the second adjustment In the warming portion, the outer peripheral ring is tempered to a second temperature at which the processing gas is not formed; and the mounting portion and the outer peripheral ring are disposed across the entire circumference to suppress the relationship between the two. a gap of a heat-exchanged heat-insulating portion function; the mounting surface of the mounting portion is formed to be smaller than the substrate, and the gap is when the substrate is placed on the mounting surface, the substrate is from the mounting surface The protruding portion is formed across the entire circumference to reach the outer peripheral ring.

Furthermore, the present invention provides a film forming method in which a substrate mounting table having a mounting portion and an outer peripheral ring is disposed in a processing chamber, and the substrate is placed on the mounting portion, and the supply processing is performed. a film forming method in which a gas is applied to the processing chamber to form a film forming process, wherein the mounting portion has a mounting surface on which the substrate is placed, and the outer peripheral ring transmits the entire circumference to suppress the mounting The gap of the heat insulating portion function of the heat exchange between the portions is provided so as to surround the outer periphery of the mounting portion, and the method includes: covering the gap across the entire circumference to reach the outer peripheral ring a step of loading the mounting surface; adjusting the temperature of the mounting portion to a first temperature at which the processing gas can be formed; and adjusting the outer peripheral ring to a film that is not formed by the processing gas The second temperature step.

The substrate mounting table has a base that is provided to protrude upward from a central portion of the base, and the outer circumferential ring may be configured to be provided to the base through a heat insulating material.

The width of the protruding portion of the substrate when the substrate is placed on the mounting surface is preferably below the width of a region that is not used as a product. In this case, the width of the protruding portion may be less than 10 mm, and the width of the gap is 1 to 9 mm. The width of the protruding portion is preferably 5 mm or more and less than 10 mm, and the width of the gap is 3 to 5 mm.

Further, the upper cover may be disposed to cover the substrate mounting table. The processing chamber is partitioned; and the third temperature regulating unit adjusts the upper lid to a third temperature at which the processing gas is not formed.

Further, a shower member provided to face the substrate mounting surface may be further provided, and the processing gas supplied from the processing gas supply means may be ejected from the shower member.

An organic gas can be used as the processing gas, and an organic film can be formed on the substrate by vapor deposition polymerization. In this case, the base film is a polyurea film, and the first temperature adjustment unit adjusts the first temperature of the mounting portion to 100° C. or lower, and the second temperature adjustment unit surrounds the outer circumference. The second temperature of the ring is adjusted to 150 ° C or higher.

According to the present invention, the mounting portion is tempered to a first temperature at which a gas can be processed to form a film, and the outer periphery is further adjusted to a second temperature at which the film is not formed by the processing gas. Therefore, the film can be formed only on the substrate. . Further, since the gap between the placing portion and the outer peripheral ring is provided over the entire circumference as a function of the heat insulating portion for suppressing the heat exchange between the portions, it is possible to prevent direct heat transfer from the outer peripheral ring to the mounting portion. Therefore, the temperature of the mounting portion can be controlled while suppressing the thermal influence of the outer peripheral ring, and the uniform temperature can be formed by uniformly forming the substrate temperature. Further, the upper surface of the outer peripheral ring and the mounting surface are flush with each other, and the mounting surface is configured to be smaller than the substrate. Further, when the size of the gap is placed on the mounting surface, the outer peripheral portion of the substrate spans the entire circumference. When it reaches the outer circumference ring, the gap is shielded by the substrate, and the processing gas can be prevented from entering the gap.

1‧‧‧Substrate mounting table

2‧‧‧Upper cover

3‧‧‧ base

4‧‧‧Loading Department

5‧‧‧ peripheral ring

6‧‧‧ gap

7‧‧‧Insulation

8‧‧‧ Space

9‧‧‧Spray plate

10‧‧‧Processing room

13‧‧‧Processing gas supply mechanism

16‧‧‧Exhaust mechanism

17,18,19‧‧‧ Temperature media channel

20‧‧‧Temperature media supply unit

25‧‧‧Control Department

100‧‧‧ film forming device

G‧‧‧Substrate

Fig. 1 is a cross-sectional view showing a film forming apparatus according to an embodiment of the present invention.

Fig. 2 is a plan view schematically showing a temperature regulating mechanism of the film forming apparatus of Fig. 1.

Fig. 3 is a cross-sectional view showing a part of a substrate stage of the film forming apparatus of Fig. 1 in an enlarged manner.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

1 is a cross-sectional view showing a film forming apparatus according to an embodiment of the present invention, and FIG. 2 is a plan view schematically showing a temperature regulating mechanism of the film forming apparatus of FIG. 1.

The film forming apparatus 100 includes a substrate mounting table 1 on which the substrate G is placed, and an upper cover 2 that partitions the processing chamber on which the film formation process is performed with respect to the substrate G placed on the substrate mounting table 1.

The substrate mounting table 1 has a plate-shaped base body, and the mounting portion 4 is provided in a columnar shape so as to protrude upward from a central portion of the base body 3, and the upper surface thereof serves as a mounting surface 4a on which the substrate G is placed; And the outer peripheral ring 5 is provided around the mounting portion 4 of the base 3 through the heat insulating material 7. Forming the placement The upper mounting surface 4a is formed to be smaller than the substrate G. In this example, the substrate G and the mounting surface 4a are formed in a rectangular shape.

The outer peripheral ring 5 is provided so as to surround the outer periphery of the placing portion 4 through the gap 6, and has a frame shape. The gap 6 functions as a heat insulating portion that suppresses heat exchange between the outer ring 5 and the mounting portion 4. The upper surface of the outer peripheral ring 5 is flush with the mounting surface 4a.

When the substrate G is placed on the mounting surface 4a, the portion where the outer peripheral portion extends over the entire circumference and protrudes from the mounting surface 4a becomes a protruding portion, and the size of the gap 6 causes the protruding portion of the substrate G to reach beyond the gap 6 The outer circumference ring 5 is above and reaches the size of the outer circumference ring 5 across the entire circumference. Therefore, when the substrate G is placed on the mounting surface 4a, the gap 6 is shielded by the substrate G.

The heat insulating material 7 is formed in a frame shape corresponding to the outer peripheral ring 5, and the inner peripheral surface is provided in contact with the outer periphery of the placing portion 4. The heat insulating material 7 is provided to insulate the outer peripheral ring 5 and the base 3, and it is preferable to use a ceramic material having a low thermal conductivity such as talc or MACOR (registered trademark). Further, the outer circumference of the outer circumferential ring 5 and the heat insulating material 7 reaches the outer circumferential position of the base body 3.

As shown in the enlarged view of Fig. 3, the width D1 of the protruding portion of the substrate G from the mounting surface 4a is equal to or less than the width of the region where the program is used as a product and is not used. This procedure ensures that the width of the outer region is usually about 10 mm, so the width of the protruding portion is preferably less than 10 mm. Further, the width D2 of the gap 6 is changed corresponding to the width D1 of the protruding portion of the substrate G. When the protruding portion width D1 is less than 10 mm, the width D2 of the gap 6 is 1 to 9 mm. Preferably, the width D1 of the protruding portion of the substrate is 5 mm or more and less than 10 mm, and the width D2 of the gap is 3 to 5 mm.

The upper cover 2 has a side wall 2a and a top wall 2b, and the side wall 2a is supported on the upper surface of the outer peripheral ring 5 in a sealed state by a sealing member (not shown). A shower plate 9 is provided below the top wall 2b through the space 8, and a portion surrounded by the side wall 2a and the shower plate 9 serves as the processing chamber 10. In addition, the upper cover 2 may be a structure that is directly supported by the base 3. In this case, the outer peripheral ring 5 and the heat insulating material 7 are formed such that the outer circumferences are to be inner side than the outer circumference of the base body 3.

A gas introduction hole 11 that reaches the space 8 is formed in the center of the top wall 2b, and a gas supply mechanism 13 is connected to the gas introduction hole 11 through the pipe 12. Then, the processor body from the processing gas supply mechanism 13 reaches the space 8 through the pipe 12, and is ejected from the plurality of gas ejection holes 9a provided in the shower plate 9 into the processing chamber 10. The gas ejection holes 9a can be uniformly disposed in a region where the shower plate 9 faces the substrate G, and can be arranged in a specific pattern.

In this way, by supplying the processing gas into the processing chamber 10, a film is formed on the substrate G. Established film. At this time, by using a predetermined organic gas as a processing gas from the processing gas supply mechanism 13, an organic film can be formed on the substrate G by vapor deposition polymerization. A representative example of the organic film formed by vapor deposition polymerization is a polyurea film. In the case of forming a polyurea film, a diisocyanate and a diamine are supplied to a gasification state by a gasifier or the like to be supplied as a processing gas. Thereby, the polyurea film can be formed by vapor deposition polymerization on the substrate G.

The side wall 2a of the upper cover 2 is formed with an exhaust port 14 at its lower portion, and an exhaust pipe 15 is connected to the exhaust port 14. The exhaust pipe 15 is provided with an exhaust mechanism 16 composed of a vacuum pump, a pressure control valve, and the like, and can maintain the inside of the processing chamber 10 in a predetermined vacuum atmosphere. When the polyurea film is formed by diisocyanate or diamine, the pressure in the processing chamber 10 is controlled to be 10 Torr (1333 Pa) or less, preferably 0.2 to 2.0 Torr (26.7 to 266 Pa).

Further, although not shown, the side wall 2a of the upper cover 2 is formed with a carry-in port for loading the substrate G, and the carry-in port can be opened and closed by an opening and closing mechanism such as a gate valve.

The first temperature control medium flow path 17 is provided inside the mounting portion 4, and the first temperature control medium flow path 17 can regulate the temperature of the mounting portion 4 by flowing the first temperature adjustment medium. By the first temperature control medium, the substrate G placed on the mounting surface 4a can be tempered to the first temperature T1 at which film formation is possible. When the organic film is formed by vapor deposition polymerization, the first temperature T1 needs to be a low temperature which can be vapor-deposited, and when the polyurea film is formed by vapor deposition polymerization, the first temperature T1 is controlled. The vapor deposition polymerization is 100 ° C or lower, preferably 50 to 100 ° C.

The second temperature control medium flow path 18 is provided inside the outer circumference ring 5. The second temperature adjustment medium flow path 18 can adjust the temperature of the outer circumference ring 5 by circulating the second temperature adjustment medium. By this second temperature regulating medium, the outer peripheral ring 5 is tempered to a second temperature T2 whose surface does not form a film. When the organic film is formed by vapor deposition polymerization, the second temperature T2 needs to be a high temperature which is not vapor-deposited, and when the polyurea film is formed by vapor deposition polymerization, the temperature of the outer peripheral ring 5 is adjusted. The temperature is not higher than 150 ° C of the evaporation polymerization, preferably 150 to 180 ° C.

The top wall 2b of the upper cover 2 is provided with a third temperature control medium flow path 19, and the third temperature control medium flow path 19 can regulate the temperature of the upper cover 2 by circulating the third temperature adjustment medium. With this third temperature-regulating medium, the upper cover 2 is tempered to a third temperature T3 at which the inner wall does not form a film. When the organic film is formed by vapor deposition polymerization, the third temperature T3 needs to be a high temperature which is not vapor-deposited, and when the polyurea film is formed by vapor deposition polymerization, the temperature of the upper lid 2 is adjusted. The temperature does not form a film of 150 ° C or more, preferably 150 to 180 ° C.

The first to third temperature control media are supplied from the temperature adjustment medium supply unit 20 to the first to third temperature control medium flow paths 17 to 19, respectively. The temperature adjustment medium supply unit 20 has a first temperature adjustment medium supply unit (CH1) 20a that supplies the first temperature adjustment medium to the first temperature adjustment medium flow path 17, and supplies the second temperature adjustment medium to the second temperature adjustment unit. The second temperature adjustment medium supply unit (CH2) 20b of the media flow path 18 and the third temperature adjustment medium supply unit (CH3) 20c that supplies the third temperature adjustment medium to the third temperature adjustment medium flow path 19.

The first temperature control medium supply unit (CH1) 20a is connected to the supply pipe 21a for supplying the first temperature control medium to the first temperature control medium flow path 17, and the first temperature adjustment unit for the first temperature control medium flow path 17. The returning pipe 21b (Fig. 2) is returned by the medium, and the first temperature regulating medium is cyclically supplied to the first temperature regulating medium flow path 17. Further, the first temperature adjustment medium supply unit (CH1) 20a controls the temperature of the first temperature adjustment medium to the first temperature T1.

The second temperature adjustment medium supply unit (CH2) 20b is connected to the supply pipe 22a that supplies the second temperature control medium to the second temperature control medium flow path 18, and the second temperature adjustment unit that supplies the second temperature control medium flow path 18. The returning pipe 22b (Fig. 2) is returned by the medium, and the second temperature regulating medium is circulated and supplied to the second temperature regulating medium flow path 18. Further, the second temperature adjustment medium supply unit (CH2) 20b controls the temperature of the second temperature adjustment medium to the second temperature T2.

The third temperature control medium supply unit (CH3) 20c is connected to the supply pipe 23a for supplying the third temperature control medium to the third temperature control medium flow path 19 and the third temperature control unit for the third temperature control medium flow path 19. The returning pipe 23b (Fig. 2) is returned by the medium, and the third temperature regulating medium is cyclically supplied to the third temperature regulating medium flow path 19. Further, the third temperature adjustment medium supply unit (CH3) 20c controls the third temperature adjustment medium temperature to the third temperature T3.

Further, the temperature adjustment medium supply unit 20 can collectively temperature control the temperature adjustment medium supplied to the second temperature adjustment medium flow path 18 and the third temperature adjustment medium flow path 19. In addition, in FIGS. 1 and 2, the first to third temperature control medium flow paths 17 to 19 are schematically depicted. Actually, these may be arranged in an appropriate shape so that the temperature can be adjusted to a predetermined temperature.

The film forming apparatus 100 has a control unit 25 for controlling each component of the film forming apparatus 100. The control unit 25 includes a microprocessor (computer), and can control the processing gas supply mechanism 13, the exhaust mechanism 16, the temperature adjustment medium supply unit 12, and the like. Since the control unit 25 executes a predetermined processing recipe, it has a memory unit, an input unit, a display, and the like that store necessary control parameters and processing recipes.

In the film forming apparatus 100 configured as described above, the substrate G transported from the substrate carry-out port (not shown) to the processing chamber 10 is placed on the outer peripheral ring 5 so as to cover the gap and cover the entire circumference. The mounting surface 4a of the portion 4 is held in the predetermined vacuum state by the exhaust mechanism 16. Then, the first temperature adjustment medium, the second temperature adjustment medium, and the third temperature adjustment medium are supplied from the temperature adjustment medium supply unit 20 to the first temperature adjustment medium flow path 17, the second temperature adjustment medium flow path 18, and the third The media flow path 19 is tempered to adjust the temperature of the mounting portion 4 to the first temperature T1 at which film formation is possible, and to adjust the temperature of the outer circumferential ring 5 and the upper cover 2 to the second temperature T2 and the third temperature T3, respectively. Further, the second temperature T2 and the third temperature T3 may be the same.

In this state, the processing gas is supplied from the processing gas supply unit 13 through the pipe 12 and the shower plate 9 to the processing chamber 10 to form a predetermined film on the surface of the substrate G.

For example, a predetermined organic gas can be used as a processing gas, and an organic film can be formed on the substrate by vapor deposition polymerization. When a polyurea film as an organic film is formed by vapor deposition polymerization, the pressure in the processing chamber 10 is controlled to 10 Torr (1333 Pa) or less, preferably 0.2 to 2.0 Torr (26.7 to 266 Pa). A vaporizer or the like supplies a diisocyanate and a diamine as a processing gas to the processing chamber 10 in a vaporized state to polymerize the vapor deposition on the substrate G.

In this case, the first temperature T1 of the temperature of the mounting unit 4 is a low temperature at which vapor deposition can be performed, and when the polyurea film is formed, it is 100° C. or lower, preferably 50 to 100° C. The placing unit 4 is tempered by the first temperature control medium. On the other hand, the second temperature T2 at the temperature of the outer peripheral ring 5 and the third temperature T3 at the temperature of the upper cover 2 are not high in the degree of vapor deposition, and when the polyurea film is formed, the temperature is 150 ° C or higher. Preferably, the outer circumference ring 5 and the upper cover 2 are tempered by the second temperature adjustment medium and the third temperature adjustment medium, respectively, in a manner of 150 to 180 °C.

Thereby, it is possible to form a film only on the surface of the substrate G, and it is possible to suppress the formation of a film on the outer surface of the mounting portion 4 or the inner wall of the upper cover 2 on the outer periphery of the mounting portion 4.

However, when the adjacent mounting portion 4 and the outer peripheral ring 5 are temperature-controlled to the respective temperatures, the mounting portion 4 is easily exchanged with the outer peripheral ring during the contact, so that the temperature controllability of the placing portion 4 is achieved. It is lowered to make it difficult to form a uniform film on the substrate G. In particular, when the substrate G is enlarged, this tendency becomes remarkable.

On the other hand, in the present embodiment, since the gap 6 serving as the heat insulating portion is formed between the placing portion 4 including the mounting surface 4a and the outer peripheral ring 5, the direct heat of the outer peripheral ring 5 toward the placing portion 4 can be prevented. transfer. In particular, since the gap 6 reaches the upper portion and the mounting surface 4a and the outer peripheral ring 5 are surely isolated, there is no mutual temperature interference between the spaces. Further, heat transfer from the outer peripheral ring 5 to the placing portion 4 by the base 3 of the permeation mounting table 1 is suppressed by the heat insulating material 7. Therefore, the temperature control of the mounting portion 4 can be performed. In a state where the influence of heat from the outer peripheral ring 5 is suppressed, the temperature of the substrate G can be made uniform to form a uniform film.

Further, in the case where the gap 6 is provided, when the process gas enters the gap 6, it becomes a cause of particles, and the film formation in the gap 6 causes a problem that the heat insulation effect cannot be obtained. However, in the present embodiment, the periphery is formed. The upper surface of the ring 5 is flush with the mounting surface 4a, and the mounting surface 4a on the upper surface of the mounting portion 4 is configured to be smaller than the substrate G. Further, the size of the gap 6 is when the substrate G is placed on the mounting surface 4a. Since the protruding portion of the substrate G from the mounting surface 4a spans the entire circumference and reaches the upper surface of the outer peripheral ring 5, such a problem can be prevented. In other words, when the substrate G is placed on the mounting surface 4a, the protruding portion of the substrate G which is present over the entire circumference of the mounting surface 4a reaches the outer peripheral ring 5, so that the gap 6 is shielded and the processing can be prevented. The gas enters into the gap 6.

Further, the outer peripheral portion of the substrate G has a region which is not used as a product outside the program, so that the width D1 of the protruding portion is not more than the width of the region, so that the yield of the product is not lowered.

The program ensures that the width of the outer region is generally about 10 mm, so the width D1 of the protruding portion is preferably less than 10 mm. Further, the width D2 of the gap 6 changes in accordance with the width D1 of the protruding portion of the substrate G. When the width D1 of the protruding portion is less than 10 mm, the width D2 of the gap 6 is about 1 to 9 mm. Further, the width D2 of the gap 6 has a preferable range from the viewpoint of the heat insulating effect of the mounting table 4 and the outer peripheral ring 5. In general, the width D1 of the protruding portion of the substrate G is preferably 5 mm, and the width D2 of the gap is 3 ~5mm.

Further, the present invention is not limited to the above embodiment, and various modifications are possible. For example, in the above embodiment, the organic film is formed on the substrate by vapor deposition polymerization by using a predetermined organic gas as the processing gas, and in particular, the film is formed into a polyurea film. However, the present invention is not limited thereto, and may be applied to a film forming process using a processing gas such as CVD.

Further, in the above-described embodiment, the temperature of the mounting unit and the outer circumference ring are adjusted by the temperature control medium. However, it is needless to say that other temperature adjustment mechanisms such as a resistance heater can be used.

Further, in the above-described embodiment, the case where the mounting surface of the substrate and the mounting portion has a rectangular shape will be described, but of course, the present invention is not limited thereto.

G‧‧‧Substrate

1‧‧‧Substrate mounting table

10‧‧‧Processing room

11‧‧‧ gas introduction hole

12‧‧‧Pipe

13‧‧‧Processing gas supply mechanism

14‧‧‧Exhaust port

15‧‧‧Exhaust piping

16‧‧‧Exhaust mechanism

17,18,19‧‧‧ Temperature media channel

2‧‧‧Upper cover

2a‧‧‧ Sidewall

2b‧‧‧ top wall

20‧‧‧Temperature media supply unit

20a‧‧‧1st temperature media supply department

20b‧‧‧2nd temperature media supply department

20c‧‧‧3rd Temperature Control Media Supply Department

21a‧‧‧Supply piping

22a‧‧‧Supply piping

23a‧‧‧Supply piping

25‧‧‧Control Department

3‧‧‧ base

4‧‧‧Loading Department

4a‧‧‧Loading surface

5‧‧‧ peripheral ring

6‧‧‧ gap

7‧‧‧Insulation

8‧‧‧ Space

9‧‧‧Spray plate

9a‧‧‧ gas ejection holes

Claims (15)

A film forming apparatus including a substrate mounting table on which a substrate is placed, a processing chamber in which a substrate placed on the substrate mounting table is subjected to a film forming process, and a processing gas for supplying a processing gas for film forming processing to the processing chamber The supply mechanism is a film forming apparatus that performs a film forming process on the substrate on the substrate mounting table, the substrate mounting table having a mounting portion on which a mounting surface of the substrate is placed, and an outer peripheral ring Providing the outer circumference of the mounting portion; the first temperature adjusting unit adjusts the temperature to a first temperature at which the processing gas can be formed; and the second temperature adjusting unit is the outer circumference The ring is tempered to a second temperature at which the processing gas is not formed; and the mounting portion and the outer peripheral ring are provided over the entire circumference to provide a function as a heat insulating portion for suppressing heat exchange between the rings. a gap; the mounting surface of the mounting portion is formed to be smaller than the substrate, and the gap is such that when the substrate is placed on the mounting surface, the protruding portion of the substrate from the mounting surface spans the entire circumference The way to reach the outer ring is formed. The film forming apparatus according to claim 1, wherein the substrate mounting table has a base portion that is provided to protrude upward from a central portion of the base body, and the outer peripheral ring is provided in the base body through a heat insulating material. The film forming apparatus of claim 1, wherein a width of the protruding portion of the substrate when the substrate is placed on the mounting surface is less than a width of a region which is not used as a product. The film forming apparatus of claim 3, wherein the protruding portion has a width of less than 10 mm, and the gap has a width of 1 to 9 mm. The film forming apparatus of claim 4, wherein the protruding portion has a width of 5 mm or more and less than 10 mm, and the gap has a width of 3 to 5 mm. The film forming apparatus according to any one of claims 1 to 5, further comprising: an upper cover provided to cover the substrate mounting table to partition the processing chamber; and a third temperature adjustment The upper cover is tempered to a third temperature at which the process gas is not formed. The film forming apparatus according to any one of claims 1 to 5, further comprising a shower member disposed to face the substrate mounting surface, and supplying the processing gas supply mechanism The process gas is ejected from the shower member. The film forming apparatus according to any one of claims 1 to 5, wherein an organic gas is used as the processing gas, and an organic film is formed on the substrate by vapor deposition polymerization. The film forming apparatus of claim 8, wherein the base film is a polyurea film, and the first temperature adjusting unit adjusts the first temperature of the mounting portion to 100° C. or lower. The second temperature adjustment unit adjusts the second temperature of the outer circumference ring to 150° C. or higher. A substrate mounting table is a substrate mounting table used for a film forming apparatus that supplies a processing gas to a substrate to form a film forming process, and has a mounting portion on which a mounting surface of the substrate is placed; and an outer peripheral ring The first temperature adjustment unit adjusts the temperature to a first temperature at which the processing gas can be formed, and the second temperature adjustment unit is configured to surround the outer periphery of the mounting portion. The outer peripheral ring is tempered to a second temperature at which the processing gas is not formed; and the mounting portion and the outer peripheral ring are provided over the entire circumference to provide a heat insulating portion function for suppressing heat exchange therebetween. The gap of the mounting portion is formed to be smaller than the substrate, and the gap is such that the substrate protrudes from the mounting surface when the substrate is placed on the mounting surface The way to reach the outer ring is formed by the week. The substrate mounting table according to claim 10, further comprising a base portion that is provided to protrude upward from a central portion of the base body, wherein the outer peripheral ring is provided to the base body through a heat insulating material. The substrate stage according to claim 10, wherein the width of the protruding portion of the substrate when the substrate is placed on the mounting surface is less than the width of a region that is not used as a product. The substrate mounting table of claim 12, wherein the protruding portion has a width of less than 10 mm, and the gap has a width of 1 to 9 mm. The substrate mounting table of claim 13 wherein the width of the protruding portion It is 5 mm or more and less than 10 mm, and the width of the gap is 3 to 5 mm. A film forming method is a film forming apparatus in which a substrate mounting table having a mounting portion and an outer peripheral ring is disposed in a processing chamber, and a processing gas is supplied to the processing chamber in a state where the substrate is placed on the mounting portion. A method of forming a film by a film forming process, wherein the mounting portion has a mounting surface on which the substrate is placed, and the outer ring ring transmits the entire circumference to suppress heat exchange with the mounting portion. The gap of the function of the heat insulating portion is provided so as to surround the outer periphery of the mounting portion, and the method includes: placing the substrate on the mounting surface so as to cover the gap and reach the outer peripheral ring across the entire circumference a step of tempering the mounting portion to a first temperature at which the processing gas can be formed, and a step of tempering the outer peripheral ring to a second temperature at which the processing gas is not formed.