TW201638382A - Chemical vapor deposition apparatus and cleaning method thereof - Google Patents

Abstract

The present invention discloses a chemical vapor deposition apparatus comprising a reaction chamber, a reaction zone located above the reaction chamber, an exhaust zone located at the bottom of the reaction chamber, and an air-sucking device communicating to the outside of the reaction chamber, the exhaust zone including an isolation device dividing the exhaust zone into an exhaust chamber and a storage chamber which are arranged internally and externally. The isolation device comprises a side wall which is provided with a gas opening to communicate the exhaust chamber and the storage chamber. A scraper member movable up and down is disposed in the exhaust zone, which is movable between upper and lower ends of the exhaust port.

Description

Chemical vapor deposition device and cleaning method thereof

The invention relates to the field of vapor deposition manufacturing technology, and in particular to a metal organic chemical vapor deposition reactor with an automatic cleaning device and function.

As shown in FIG. 1, the metal organic chemical vapor deposition (MOCVD) reactor includes a reaction chamber 100 including a tray 14 in which a plurality of substrates 15 to be processed are fixed, and a tray has a center under the tray 14 A rotating shaft 24 drives the tray to rotate at a high speed during the reaction. Below the tray 14, a heater 12 is further included to heat the tray 14 to a suitable elevated temperature, typically about 1000 degrees, to accommodate the crystal growth of gallium nitride (GaN) crystal material. Opposite the tray in the reaction chamber 100 is a gas shower head 21 comprising a plurality of mutually isolated sets of intake passages, the first set of intake passages being connected to the first by a first gas line 43 The reaction gas source 41, the second group of intake passages are connected to the second reaction gas source 42 by the second gas line 44, and the third group of intake passages can be further disposed in the first and second intermediate passages. Different reaction gases are isolated between the gas channels. The lower portion of the shower head further includes a coolant line connected to the coolant source 50 by the coolant supply pipe 51. The sprinkler can be controlled by controlling the temperature and flow rate of the coolant output coolant. Temperature, such as 50 degrees. A reaction chamber liner 62 is further disposed around the reaction space between the shower head and the lower tray. The liner further includes a lifting drive mechanism 64 for driving the liner 62 to move up and down, and the liner is at a higher position. The effect of the unevenness caused by the tray inlet and outlet (not shown) on the side wall of the reaction chamber 100 can be shielded to improve the gas flow and temperature uniformity. When the process on the tray is completed, the tray needs to be removed, and the liner 62 can be driven to move downward so that the tray 14 passes through the tray inlet and outlet opened on the side wall of the reaction chamber 100. The space below the tray further includes a base side wall 16 that surrounds the rotating shaft 24 and the heater 12 to shield internal heat and external contaminants. The bottom of the reaction chamber further includes an exhaust region 34, and the by-products and exhaust gas after the completion of the reaction are connected to the air extracting device 36 through a pipe, so that the by-products and the exhaust gas are discharged out of the reaction chamber while controlling the gas flow and the gas pressure in the reaction chamber. The exhaust region 34 and the reaction region further include a horizontally disposed annular gas barrier 30. The inner side of the gas barrier 30 is fixed to the outer side of the base sidewall, and the other side thereof is fixed to the inner wall of the reaction chamber 100. The annular gas barrier 30 is provided. Further, one or more airflow openings 31 disposed in the vertical direction are provided, and the openings may be annular grooves or air holes uniformly distributed over the circumference of the annular gas barrier plate 30. By designing the size of these openings, the flow and distribution of the gas flow in the upper reaction zone at different locations can be controlled. The coolant supply conduit 51 described above can also provide coolant to both the liner 62 and the side walls of the reaction chamber 100 to control the temperature of these components.

In the prior art, during the reaction, the reaction gas forms a gallium nitride (GaN) or other nitride, and the reaction gas trimethylgallium (TMG) decomposes at a high temperature to form a large amount of organic matter. The high temperature tray 14 and substrate 15 will form the desired dense semiconductor crystals, but these products will form loose deposits on the lower lining 62, the inner wall of the reaction chamber 100 or the lower temperature components such as the gas shower head 21. The accumulation of materials, these deposits will accumulate for a long time to form flaky contaminants, randomly peeling off, and directly fall down vertically to the lower gas barrier 30, some large-area flaky pollutants will block the above airflow. Opening 31. Once the partial airflow opening 31 is blocked, the flow distribution of the upper reaction gas will be uneven, and the crystal structure grown on the substrate will also be uneven, which will seriously affect the productivity and quality of the LED substrate.

In order to solve the above problems, frequent shutdowns are required, the reaction chamber is opened, and large deposits on the gas barrier 30 are cleaned, but this also affects the productivity of the chemical vapor deposition apparatus. Some prior art techniques also disclose that a cleaning device is driven through the opening when the liner 62 is moved downward, and the topping of the deposit ensures that the opening 31 is clear. However, such a design still has drawbacks. The liner 62 will only rise and fall once after completing the entire reaction process, and the entire reaction process can last for hours or even tens of hours, during which the problem of clogging the opening 31 is likely to occur. This problem cannot be solved, so a better cleaning device or method is needed to achieve long-term effective cleaning of the vent of the chemical vapor deposition device.

The problem solved by the present invention is to achieve cleaning of the exhaust region in the chemical vapor deposition apparatus to prevent a large amount of deposited contaminants from clogging the exhaust port, resulting in uneven airflow distribution.

According to an object of the present invention, the present invention provides a chemical vapor deposition apparatus comprising: a reaction chamber including a reaction chamber sidewall; a susceptor disposed in the reaction chamber, the pedestal including a pedestal sidewall, a pedestal sidewall and a reaction chamber sidewall The utility model comprises an exhausting area; the separating device divides the exhausting area into an exhausting chamber and a storage cavity arranged inside and outside the side wall of the base, the storage cavity is in communication with the reaction area above the base; the isolating device comprises an isolation a side wall of the device, a plurality of exhaust ports are opened on the side wall of the isolating device, and the exhaust port and the storage chamber are connected by the exhaust port; wherein the exhaust port is used to allow the reaction gas and the auxiliary in the process of the reaction chamber process The product enters the exhaust chamber for exhausting reactive gases and by-products out of the reaction chamber; the storage chamber is for containing particulate or flaky deposits during the collection process.

The invention further provides a process processing method of the foregoing chemical vapor deposition apparatus, comprising: inputting a reaction gas into a reaction chamber to perform chemical vapor deposition on a susceptor, and a reaction gas from the reaction region during the process of the process And the side reaction product enters the exhaust chamber along the non-vertical path through the exhaust port, and is discharged to the outside of the reaction chamber, and the granular or flake deposit directly falls in the vertical direction and is collected in the storage chamber.

The invention further provides a chemical vapor deposition apparatus, comprising: a reaction chamber comprising a reaction chamber sidewall; a susceptor located in the reaction chamber, the pedestal comprising a pedestal sidewall, and an exhaust between the pedestal sidewall and the reaction chamber sidewall An isolation device divides the exhaust region into an exhaust chamber and a storage chamber disposed inside and outside the base sidewall, the storage chamber is in communication with the reaction region above the base; the isolation device includes an isolation device sidewall, the isolation device A plurality of exhaust ports are opened on the side wall, and the exhaust chamber and the storage chamber are connected by the exhaust port; the exhaust region further includes at least one movable scraping member that can move near the exhaust port.

The invention provides a chemical vapor deposition apparatus, comprising: a reaction chamber, wherein the reaction chamber comprises an air inlet device disposed at the top of the reaction chamber, a base is located below the reaction chamber and opposite to the air intake device, and the base includes a base The side wall, the side wall of the base and the side wall of the reaction chamber comprise an exhaust area; an isolating device divides the exhaust area into an exhaust chamber and a storage chamber arranged inside and outside the side wall of the base, the storage chamber and the base The upper reaction area is connected; the isolating device comprises a side wall, the side wall is provided with an exhaust port, and the exhaust port is connected between the exhaust chamber and the storage chamber, and the exhausting region further comprises at least one movable scraping component Move between the ends of the exhaust port. The exhaust chamber may be located on the inner side, and the storage chamber is located outside the exhaust chamber. The isolation device includes a top cover at the top, the top cover being located above the exhaust port to prevent deposits from falling into the exhaust chamber from the top of the exhaust chamber. The top cover has an inclined upper surface and is shaped to match the inner surface of the liftable inner liner such that when the inner side is lowered, it is adjacent to the upper surface of the top cover and crushes the bulk deposits on both surfaces.

The base side wall surrounds a heating device and a rotating shaft, and a tray is disposed above the rotating shaft; a liftable inner liner surrounds the reaction area above the base, and the liftable inner liner drives the scraping member to move between the upper end and the lower end of the opening. The scraping member may be connected to the inner liner by a connecting rod. The venting region may further include a lever, the scraping member being coupled to the first end of the lever, and the second end of the lever being coupled to the lining by a link. The venting region further includes a jacking rod, the first end of the lever lifting the scraping member by the jacking rod, and the lever fulcrum is lower than the lower end of the exhaust port, thereby avoiding interference with the gas flowing through the exhaust port. The bottom of the storage area may further include a partition plate with the lever below the partition plate.

Preferably, the jacking rod is moved up and down in the exhaust chamber inside the side wall of the base, and the scraping member moves between the upper and lower ends of the opening along the inner side of the side wall of the spacer. Alternatively, the scraping member can be located within the storage chamber and move between the upper and lower ends of the opening along the outside of the side wall of the spacer.

Preferably, the present invention can employ a plurality of scraping members between the plurality of exhaust ports to drive the plurality of scraping members to move circumferentially around the side walls of the spacer so that each of the scraping members sweeps at least one of the exhaust ports. .

The storage chamber includes at least one anti-sediment reflux device, and the anti-sediment reflux device includes a downwardly inclined plate.

Further, the scraping member of the present invention has a laterally extending extension that extends into the exhaust port as the scraping member passes through the exhaust port.

The present invention further provides a cleaning method for cleaning the aforementioned chemical vapor deposition apparatus, comprising: moving the scraping member to move it near the exhaust port to scrape deposits deposited on the exhaust port.

Preferably, the liftable lining in the reaction chamber is moved up and down to drive the scraping member to move up and down.

Preferably, the liftable lining and the scraping member are linked by a connecting rod or a lever.

Preferably, the wiper member is driven to move circumferentially about the side wall of the spacer such that each of the scraping members sweeps at least a portion of the vent area.

Preferably, the first position and the second position are located at the upper and lower ends of the exhaust port, or the first position and the second position are located between the different exhaust ports.

The invention solves the problem that the pollutants generated during the operation of the chemical vapor deposition device block the exhaust port of the exhaust region, causing uneven distribution of the reaction gas flow.

In order to solve the chemical vapor deposition apparatus as shown in FIG. 1, a large sheet-like deposit is peeled off from above, and is directly dropped downward in the vertical direction onto the gas barrier 30 located below, blocking the airflow opening 31, As a result, the process result is not uniform, and the present invention provides a simpler and more effective solution with completely different ideas. Different from the prior art, the present invention provides a lateral exhaust device such that the opening of the exhaust port is oriented in a non-vertical direction (for example, in a horizontal direction), so that it can be effectively avoided during the process. The upper granular or flaky deposit directly falls in the vertical direction and blocks the exhaust port; at the same time, the present invention more subtly provides a deposit storage area in the exhaust region that is isolated from the exhaust chamber, so that Granular or flaky deposits are effectively collected and compacted without turbulence in the reaction chamber, thereby affecting the uniformity of the exhaust and process.

The present invention will be described below in conjunction with the embodiments shown in Figs. 2 and 3. Fig. 2 is a view showing an embodiment of a chemical vapor deposition apparatus according to the present invention, which is in a state in which the reactor is subjected to chemical vapor deposition, and at this time, the liftable liner 62 is located at an upper side. position. The basic structure of the reactor is substantially the same as that of the prior art shown in Fig. 1. The main improvement is the venting region (shown by the dashed box A in the figure) between the side wall of the susceptor and the side wall of the reaction chamber. In the present invention, the lower exhaust region includes an isolation device 139 for separating the exhaust region into an internal exhaust chamber 134 and a storage region for storing deposits disposed around the periphery of the exhaust chamber or for storage. Cavity 138. As an embodiment, the isolation device is a drum-type spacer 139 including a top cover (described in detail later). The isolation device includes an isolation device sidewall 139a, and a plurality of openings 137 are defined in the isolation device sidewall 139a. The exhaust chamber 134 is located inside the spacer side wall 139a and is disposed around the outside of the base side wall 16; the storage chamber 138 is located outside the spacer side wall 139a and disposed around the outside of the exhaust chamber 134.

The isolation device further includes a top cover 135 disposed above the exhaust chamber 134, the inside of the top cover 135 is fixed to the outer side surface of the base side wall 16, and one or more of the lower surface of the top cover 135 and the spacer side wall 139a The opening 137 whose opening faces the non-vertical direction serves as an exhaust port, so that the reaction gas enters the exhaust chamber 134 along the exhaust path shown by 18 in FIG. 2, and is evacuated by the air extracting device 136 while being formed in the reaction. The small particulate contaminants are also pumped away with the gas stream. Large pieces of sediment or larger granular deposits falling off from the upper lining 62 or the gas sprinkler, falling down vertically or vertically due to gravity during the downward falling process The storage area or storage chamber 138 does not pass laterally through the opening 137, enters the exhaust chamber or directly blocks the opening 137. As long as the space volume of the storage chamber 138 is large enough, a plurality of (for example, more than 100) deposition pollutants generated in the crystal growth period can be stored in the space in the storage area, without opening the reaction chamber for cleaning, and without As described in the prior art, the mechanical structure is frequently moved to scrape or pass through the horizontal opening 31 (Fig. 1) to ensure that the opening is not blocked.

It can be seen from the above description that the present invention provides an isolation device or an exhaust device having a lateral exhaust function in a reaction chamber between the side wall of the base and the side wall of the reaction chamber in the reaction chamber of the chemical vapor deposition apparatus. The exhaust region is partitioned into an exhaust chamber and a storage chamber that are arranged inside and outside the side wall of the base. The storage chamber is in communication with the reaction area above the base, the isolation device includes an isolation device side wall, and a plurality of exhaust ports are opened on the side wall of the isolation device, and the exhaust chamber and the storage chamber are connected by the exhaust port; During the process of the chamber process, the reaction gas and side reaction products from the reaction zone are discharged to the outside of the reaction chamber through the exhaust port and the exhaust chamber, and the granular or flake deposits fall into and are collected in the storage chamber. The exhaust port is used to allow the reaction gas and by-products in the process of the reaction chamber process to enter the exhaust chamber, the exhaust chamber is used to discharge the reaction gas and by-products to the outside of the reaction chamber; the storage chamber is used to accommodate the collection process Granular or flaky deposits.

Preferably, the openings of the plurality of exhaust ports are oriented in a non-vertical direction (horizontal direction or an oblique direction with an angle of less than 90 degrees from the horizontal direction) to avoid granular or flaky deposition during the processing process. The object directly falls in the vertical direction and blocks the exhaust port.

Preferably, a top cover is located above the plurality of exhaust ports, and the top cover provides shielding for the plurality of exhaust ports at the top to prevent the granular or sheet-like deposit from directly falling into the plurality of exhaust ports in the vertical direction. .

Figure 3 is a view showing the lower and lower lining of the reaction chamber shown in Fig. 2, in which the reaction chamber is stopped, and the tray 14 is passed through the tray opened on the side wall of the reaction chamber 100. Import and export are transmitted. The liftable inner liner 62 is disposed around the reaction area above the base and is movable up and down along the side wall of the reaction chamber, and the liftable inner liner includes a bottom end surface 62a. In Fig. 3, the opening 137 has an opening start line L1 located above and an opening end line L2 located below, and when the liftable inner liner 62 is moved to a position below it, the bottom end face 62a of the liftable inner liner is over the opening. Line L1, which can further scrape large deposit particles or flaky deposits located near opening 137, and can stop at a position below opening starting line L1. More preferably, when the liftable inner liner is moved to the lower position thereof, the bottom end surface 62a passes over the opening end line L2 and stops at a position below the opening end line L2, in which the bottom end surface 62a can not only be fully scraped The large deposit particles or flaky deposits located near the opening 137 are rubbed, and the deposits stored in the storage chamber 138 can be pressed and compacted.

The top cover 135 of the isolating device has an inclined upper surface and is shaped to match or fits the inner surface of the liftable inner liner 62 so long as the inner surface of the liftable inner liner 62 does not move when the liftable inner liner 62 moves up and down Colliding with the upper surface of the top cover 135.

Further, at least one anti-sediment reflux device may be disposed in the storage chamber 138. As an embodiment, the anti-sediment reflux device includes a downwardly inclined plate.

Further, as shown in FIG. 10, a rotating ring 566 may be further disposed around the outer side wall of the separating device, and the rotating ring 566 is provided with a plurality of upward extending portions 567, and the upper end of the extending portion is provided with a scraping portion 568. The rotating ring 566 is rotatable about the outer side wall of the isolating device to drive the scraping portion 568 to scrape between different openings 137.

In order to more effectively prevent or remove large deposits that may block the vicinity of the opening 137, the following various embodiments of the present invention can effectively achieve this object.

As shown in Fig. 4, the present invention proposes a chemical vapor deposition apparatus. The basic structure of the reactor is substantially the same as that of the prior art shown in Fig. 1. The main improvement is the row between the side wall of the base and the side wall of the reaction chamber. Gas area (dashed box A in the figure). The lower exhaust region of the present invention includes a drum-type partitioning plate 139 that divides the exhaust region into an inner exhaust chamber 134 and a storage chamber 138 disposed around the periphery of the exhaust chamber for storing deposits. The exhaust chamber further includes an annular top cover 135, the inner side of the top cover 135 is fixed to the outer side surface of the base side wall 16, and one or more openings 137 are arranged as a row between the lower surface of the top cover 135 and the partition plate 139. The port is such that the reaction gas enters the exhaust chamber 134 along the exhaust path shown in Fig. 18 and is withdrawn by the pumping device 136, while the small particulate contaminants formed in the reaction are also withdrawn as the air stream. The large piece of sediment falling off the upper liner 62 will fall vertically into the lower storage area (or storage chamber 138) due to gravity during the downward fall without entering the exhaust through the opening 137 laterally. The cavity or directly blocks the opening 137. As long as the space of the storage area (or the storage chamber 138) is large enough, a plurality of (eg, more than 100) crystal growth cycles can be stored in the space in the storage area without opening the reaction chamber for cleaning. It is also not necessary to use a mechanical structure to frequently scrape or pass through the horizontal opening 31 (Fig. 1) as shown in the prior art to ensure that the opening is not blocked.

In the structure of the chemical vapor deposition apparatus of the present invention, only the upper surface of the top cover 135 and the outer surface of the partition plate 139 gradually accumulate deposits. During long-term operation, a large amount of these deposits will still partially expand toward the opening 137, affecting the airflow distribution, so It still needs to be cleaned once after a while. However, since the main bulk deposits will fall into the storage chamber, this cleaning frequency can be low to ensure a stable and uniform airflow, such as completing a growth cycle, once when the substrate is transported out of the reaction chamber.

The lower end of the inner liner 62 in Fig. 4 includes a downwardly extending link 166 which is secured to the inner liner 62 at one end and to a scraping member 168 at the other end. The shape and configuration of the link 166 is such that the wiper member abuts against the outer sidewall of the top cover 135 at the upper end of the opening 137.

5a and 5b are partial enlarged views of the structure of the exhaust region in the dotted line frame at A in Fig. 4, wherein Fig. 5a shows the state when the liner 62 is at a higher position during crystal growth; The figure shows that after completing a crystal growth process, the door on the side wall of the reaction chamber is opened. When the tray is transported out of the reaction chamber, the lining is lowered to a certain height. At this time, the scraping member moves downward with the lining and moves to the lower end of the opening. The outer side wall of the plate 139. During each crystal growth process cycle, the scraping members reciprocate once at the upper and lower ends of the opening 137 to ensure the smoothness of the opening 137.

The embodiment as illustrated in Figures 5a and 5b has an effect on the air flow due to the fact that the link 166 and the scraping structure are located on the exhaust path 18 during crystal growth, and the present invention proposes the other as shown in Figures 6a and 6b. An enlarged view of the structure of the exhaust region of an embodiment. Wherein Figure 6a is an illustration of a crystal growth process in which a lower end of the inner liner 62 is secured with a link 266, the lower end of which extends downwardly coupled to a first end 265 of a lever, the lever including a fulcrum 267 and a second end 269, the second end 269 is coupled to the scraping member 268. Similarly, as shown in FIG. 6b, after completing a crystal growth cycle, the liner 62 is lowered, and the link 266 moves downward to drive the first end 265 of the lever downward, while the second end of the lever drives the scraping member 268 upward. The upper end of the opening 137 is reached. Thus, the use of the lever structure can also clean the opening 137 and scrape off the contaminants adhering to the surface. Wherein the lever fulcrum 267 can be secured to the side wall of the reaction chamber 100 or to the spacer 139 or any other fixed component within the reaction chamber. When the position of the lever fulcrum is not lower than the position of the opening 137, it can be ensured that the lever does not touch or even be caught by a large amount of deposit accumulated in the lower storage chamber 138 during the downward movement, which affects the movement trajectory of the scraping member 268.

In the embodiment as described in Figures 6a and 6b, since the link 266 and the lever are located on the exhaust path 18 during crystal growth, the air flow is also affected, and the present invention proposes the Figs. 7a and 7b. An enlarged view of the structure of the exhaust region of another embodiment. 7a is a diagram during crystal growth, wherein a lower end of the inner liner 62 is fixed with a link 366, and a lower end of the connecting rod is connected to a first end 365 of a lever, the lever including a fulcrum 367 and a second end 361, the second end 361 is connected to a jacking rod 369, the top of the jacking rod 369 is fixed with a scraping member 368, the bottom portion of which is connected to a pull-down member 360, which may be a weight or a spring, a gas spring, etc. Under the tension of the object. Similarly, as shown in FIG. 7b, after completing a crystal growth cycle, the inner liner 62 is lowered, and the link 366 moves downward to drive the first end 365 of the lever downward, while the second end of the lever drives the jacking rod 369. A scraping member 368 fixed to the upper end of the jacking rod 369 reaches the upper end of the opening 137. Thus, the use of the lever structure can also clean the opening 137 and scrape off the contaminants adhering to the surface. Wherein the height of the lever is below the lower end of the first opening 137, so that the airflow is not affected during crystal growth.

In order to prevent mechanical means such as a lever and a jacking rod from being buried in the deposited contaminants, the present invention can be further modified to another embodiment as shown in Fig. 8. As shown in FIG. 8, a horizontal partition plate 470 is disposed in the storage chamber to divide the storage chamber 138 into upper and lower sub-chambers, the upper sub-chamber is still used for storing pollutants, and the lower sub-chamber 140 is used for placing. The lever, only the link 466 vertically passes through the corresponding hole in the partition plate 470, moves up and down between the two sub-chambers. 460, 461, 467, 465 of the other lever members have the same properties as the parts/portions of the corresponding numbers 360, 361, 367, 365 in the embodiment. Since the link 466 is vertically movable, it reciprocates once every time the crystal growth cycle is completed, so that it is ensured that the two rods are not caught by the deposit accumulated for a long period of time. Since the laterally disposed lever is placed in the lower sub-cavity 140, a large amount of deposit does not pass through the small hole in the partition plate 470 into the lower sub-cavity to form a pile, so that the lever movement is not affected by the height of the deposit. Impact. Such a configuration enables the scraping member 468 to clean the surface of the partition plate 139 located inside the exhaust chamber 134. The lever of the present invention may include a plurality of jacking rods 469 while lifting a plurality of scraping members up and down while cleaning the deposits 137 on the sides of the partitioning plate 139.

Further, when the thickness of the partitioning plate 139 is sufficient, and the panel includes a space for accommodating the scraping portion or the jacking rod to move up and down, the jacking rod 369 can be disposed in the partitioning plate 139, and the upper and lower movements can drive the scraping in the opening 137. The wiper member moves between the upper and lower ends of the opening.

The wiping member of the present invention can be moved in the up and down direction to remove deposits accumulated on the opening 137 by scratching, and the wiping member can also achieve the cleaning purpose of the present invention by means of other directions of action. Another embodiment of the present invention is shown in Fig. 10, which is a side view of the spacer 139. The main difference from the foregoing embodiment is that a rotating ring 566 is disposed on the outer wall of the spacer 139, and the rotating ring. The upper portion includes a plurality of upwardly extending portions 567, the upper end of the extending portion is a scraping portion 568, and the plurality of scraping portions 568 are located between the different openings 137. When the drive unit drives the rotating ring 566 to move circumferentially about the spacer 139, the plurality of scraping members 568 will sweep through the one or more openings 137, respectively, and eventually stop at a position between the openings 137 to avoid affecting the air flow. The wiping and driving means in the foregoing embodiments are disposed below the air flow path so as to avoid affecting the air flow distribution during crystal deposition.

The storage area (or storage chamber 138) in the present invention may also be disposed adjacent to the base side wall 16, and the exhaust chamber 134 is disposed adjacent to the side wall of the reaction chamber 100 to form a structure in which the exhaust chamber surrounds the storage area. At this time, the shape of the top cover 135 of the exhaust chamber needs to be corrected accordingly, and the inclination direction thereof is opposite to the direction of the foregoing embodiment, and is inclined downward from the outer side toward the inner base direction. Such a structure can still achieve the object of the present invention and is also the same inventive concept.

The scraping member of the present invention may include a laterally extending portion in addition to the steel sheet which may be vertically extending as shown in Figures 5 to 8, and the laterally extending portion may extend when the scraping member passes through the opening 137. Into the opening 137, it is possible to simultaneously clean the inside of the opening 137 and the outside surface of the opening. Another embodiment of the present invention is shown in Figures 9a and 9b, the structure and internal component number being substantially the same as those shown in Figures 7a and 7b, the main difference being that the scraping member comprises a wiping plate 668 and a lateral direction. Extended extension 669. Figure 9a shows the extension 669 at the bottom of the opening when the scraping member is in contact with the spacer 139 under the opening, and the extension 669 extends inwardly into the opening when the scraping member passes the opening position, as shown in Fig. 9b. Achieve cleanliness within the opening. The extension portion 669 may be a mechanical structure of any shape, and is not limited to the shape shown in Figs. 9a and 9b, and the object of the present invention can be achieved as long as it can protrude into the open space when passing through the opening.

Further, in the storage region (or storage chamber 138) in various embodiments of the present invention, an anti-sediment reflux device for preventing small particles of contaminants from flowing upward may be disposed. As shown in Figures 5a and 5b, 141 is an anti-sediment reflux device. The anti-sediment reflux device 141 may be one or more plates that are fixed at one end to the partition or the inner wall of the reaction chamber, and the other end is inclined downward by a certain angle. During the operation of the chemical vapor deposition apparatus, part of the large sediment falling from above will fall onto the anti-sediment reflux device and slide down into the storage space below, while anti-sediment reflux Most of the flying particles below the device will be blocked by the anti-sediment reflow device and will not spread upwards to avoid secondary pollution. The anti-sediment reflux device 141 may be soldered to the storage area (or storage chamber 138) or may be detachably secured within the storage area (or storage chamber 138).

In the present invention, the scraping members 168, 268, 368 can be driven by the inner lining up and down, or by other mechanical driving means such as a cylinder or a motor, and these driving mechanisms can achieve the object of the present invention. When other mechanical driving devices are used, the inner liner can be lowered without waiting for the end of the crystal growth stage. Once the opening 137 is found to be clogged, the scraping member can be directly driven to remove the deposit, which has better flexibility.

The isolating plate or the isolating device for isolating the exhaust space of the present invention may be inclined except that the exhaust chamber and the storage region are vertically separated as shown in FIGS. 5 and 6, and the tilt may be inclined inward or inclined outward. The object of the present invention can be achieved as long as it can be ensured that the opening on the partitioning plate 139 does not fall into or accumulate large deposits causing clogging.

As an embodiment, Figures 11a and 11b show front and cross-sectional views, respectively, of an exhaust or isolation device of the present invention. The venting or isolating device is generally cylindrical in shape and includes a top cover 735, an isolating device side wall 739, an exhaust chamber 734, and an exhaust port 737. The exhaust chamber 734 is connected to an exhaust pump (not shown). The exhaust port 737 is located below the top cover 735 with its opening oriented in a non-vertical direction (eg, in a horizontal direction).

The invention realizes the vertical separation of the exhaust region by the isolating device, forms the exhaust cavity and the storage region, a large amount of deposit falls directly into the storage region, and the gas flows into the exhaust cavity laterally through the sidewall opening of the isolating device, such a design can Make sure that the opening is not blocked by large deposits, so that it can be blocked during long deposition times, and the optimized cleaning device design does not affect the reaction gas distribution during crystal growth.

Although the present invention has been disclosed above, the present invention is not limited thereto. Any changes and modifications may be made without departing from the spirit and scope of the invention, and the scope of the invention should be determined by the scope defined by the scope of the claims.

100‧‧‧reaction chamber
12‧‧‧heater
134, 734‧‧ ‧ exhaust chamber
135‧‧‧Top cover
136, 36‧‧‧ evacuation device
137, 31‧‧‧ openings
138‧‧‧ Storage chamber
139‧‧‧Isolation board
139a, 739‧‧‧Isolation device side walls
14‧‧‧Tray
141‧‧‧Anti-sediment reflux device
15‧‧‧Substrate
16‧‧‧Base wall
166‧‧‧ linkage
168, 268, 368, 468‧‧‧ scraping parts
18‧‧‧Exhaust path
21‧‧‧ gas sprinkler
24‧‧‧Rotary axis
265, 365, 465‧‧‧ first end
266, 366, 466‧‧‧ linkage
267, 367, 467‧‧ fulcrum
269, 361, 461‧‧‧ second end
30‧‧‧ gas shield
34‧‧‧Exhaust area
360, 460‧‧‧ drop-down parts
369, 469‧‧‧ jacking pole
41‧‧‧First reaction gas source
42‧‧‧Second reaction gas source
43‧‧‧First gas line
44‧‧‧Second gas pipeline
50‧‧‧ Coolant source
51‧‧‧Cool supply pipeline
566‧‧‧Rotating ring
567‧‧‧Upper extension
568‧‧‧Scratch
62‧‧‧ lining
62a‧‧‧ bottom end
64‧‧‧ Lifting drive mechanism
668‧‧‧Scratch board
669‧‧‧Extension
735‧‧‧Top cover
737‧‧ vent
L1‧‧‧ opening starting line
L2‧‧‧ opening end line

Fig. 1 is a schematic view showing the overall structure of a conventional chemical vapor deposition apparatus. Fig. 2 is a schematic view showing the structure of an embodiment of the chemical vapor deposition apparatus of the present invention. Fig. 3 is a view showing another state of the chemical vapor deposition apparatus of Fig. 2. Fig. 4 is a schematic view showing the structure of another embodiment of the chemical vapor deposition apparatus of the present invention. 5a and 5b are enlarged views of an exhaust region according to an embodiment of the present invention. 6a and 6b are enlarged views of an exhaust region according to an embodiment of the present invention. 7a and 7b are enlarged views of an exhaust region according to an embodiment of the present invention. Fig. 8 is an enlarged schematic view showing an exhaust region of another embodiment of the present invention. 9a and 9b are enlarged schematic views of an exhaust region according to another embodiment of the present invention. Figure 10 is a side elevational view of an isolation device in accordance with another embodiment of the present invention. Figures 11a and 11b are schematic views of the exhaust or isolation device of the present invention.

100‧‧‧reaction chamber

12‧‧‧heater

134‧‧‧Exhaust chamber

135‧‧‧Top cover

136‧‧‧Exhaust device

137‧‧‧ openings

138‧‧‧ Storage chamber

139‧‧‧Isolation board

14‧‧‧Tray

15‧‧‧Substrate

16‧‧‧Base wall

166‧‧‧ linkage

168‧‧‧Scratch parts

18‧‧‧Exhaust path

21‧‧‧ gas sprinkler

24‧‧‧Rotary axis

41‧‧‧First reaction gas source

42‧‧‧Second reaction gas source

43‧‧‧First gas line

44‧‧‧Second gas pipeline

50‧‧‧ Coolant source

51‧‧‧Cool supply pipeline

62‧‧‧ lining

64‧‧‧ Lifting drive mechanism

Claims (30)

A chemical vapor deposition apparatus comprising: a reaction chamber including a reaction chamber sidewall; a susceptor located in the reaction chamber, the pedestal including a pedestal sidewall, the pedestal sidewall and the reaction chamber sidewall including a row a gas region; and an isolating device that divides the exhaust region into an exhaust chamber and a storage chamber disposed inside and outside the side wall of the base, the storage chamber being in communication with a reaction area above the base, the isolation device including a side wall of the isolating device, a plurality of exhaust ports are opened on the side wall of the isolating device, and the exhaust port is connected to the storage cavity through the exhaust port; wherein the exhaust port is used to allow the process of the reaction chamber The reaction gas and by-products in the process enter the exhaust chamber for discharging the reaction gas and by-products to the outside of the reaction chamber for accommodating the granular or sheet during the collection process Sediment. The device of claim 1, wherein the exhaust chamber is located inside the side wall of the spacer and is disposed around an outer side of the side wall of the base, the storage chamber being located outside the side wall of the spacer and surrounding the It is provided outside the exhaust chamber. The device of claim 1, wherein the opening of the plurality of exhaust ports is oriented in a non-vertical direction to prevent the granular or sheet-like deposit from falling directly in the vertical direction during the processing process. And block the exhaust port. The device of claim 3, wherein the opening of the plurality of exhaust ports is oriented in a horizontal direction or an oblique direction that is less than 90 degrees from the horizontal direction. The device of claim 1, wherein the isolating device further comprises a top cover at the top, the top cover being located above the exhaust chamber to prevent deposits from falling into the exhaust chamber. The device of claim 5, wherein the plurality of exhaust ports are located below the top cover, the top cover provides shielding for the plurality of exhaust ports above to prevent the granular or sheet-like deposition The object falls directly into the plurality of exhaust ports in a vertical direction. The device of claim 1, wherein the reaction chamber further comprises a liftable inner liner disposed around the reaction area above the base and movable up and down along the side wall of the reaction chamber, the liftable The inner liner includes a bottom end face. The device of claim 7, wherein the exhaust port has an opening start line located above and an opening end line located below, and when the liftable inner liner moves to a lower position thereof, the liftable inner portion The bottom end of the liner passes over the opening line of the opening and stops at a position below the starting line of the opening. The device of claim 8, wherein when the liftable lining is moved to a lower position thereof, a bottom end surface of the liftable lining passes over the opening end line and stops at a lower end of the opening end line. Position, in which the bottom end presses down deposits stored in the storage chamber. The device of claim 7, wherein the isolating device further comprises a top cover over the exhaust chamber, the top cover having an inclined upper surface and having a shape matching the inner surface of the liftable inner liner When the liftable lining moves up and down, the inner surface does not collide with the upper surface. The device of claim 1, wherein the storage chamber comprises at least one anti-sediment reflux device, the anti-sediment reflux device comprising a downwardly inclined plate. The device of claim 7, wherein the liftable lining is coupled to at least one scraping member that is movable adjacent the exhaust port. The device of claim 1, wherein a rotating ring is disposed around the outer side wall of the separating device, and the rotating ring is provided with a plurality of upward extending portions, and the upper end of the extending portion is provided with a scraping portion, and the rotating ring can be provided. Rotating around the outer side wall of the isolating device to drive the scraping portion to scrape between different openings. A process processing method for a chemical vapor deposition apparatus according to any one of claims 1 to 13, comprising: inputting a reaction gas to the reaction chamber to perform chemical vapor deposition on the susceptor, During the processing of the process, the reaction gas and the side reaction product from the reaction zone enter the exhaust chamber along the non-vertical path via the exhaust port, and are discharged to the outside of the reaction chamber, the granular or sheet-like The deposit falls directly into the vertical direction and is collected in the storage chamber. A chemical vapor deposition apparatus comprising: a reaction chamber including a reaction chamber sidewall; a susceptor located in the reaction chamber, the pedestal including a pedestal sidewall, the pedestal sidewall and the reaction chamber sidewall including a row a gas region; and an isolating device that divides the exhaust region into an exhaust chamber and a storage chamber disposed inside and outside the side wall of the base, the storage chamber being in communication with a reaction area above the base, the isolation device including a side wall of the isolating device, a plurality of exhaust ports are defined in the side wall of the isolating device, and the exhaust port is connected to the storage cavity by the exhaust port; wherein the exhausting region further comprises at least one movable A scraping member that is movable near the exhaust port. The device of claim 15, wherein the exhaust chamber is located adjacent to an inner side of the side wall of the isolator, the storage chamber being located outside the exhaust chamber. The device of claim 15, wherein the isolating device comprises a top cover at the top, the top cover being located above the exhaust chamber to prevent deposits from falling into the exhaust chamber. The apparatus of claim 15 wherein the reaction chamber further comprises a liftable inner liner disposed around the reaction zone above the base and movable up and down along the sidewall of the reaction chamber. The device of claim 17, wherein the top cover has a sloped upper surface and is shaped to match an inner surface of a liftable liner located within the reaction chamber. The device of claim 18, wherein the scraping member is coupled to the liftable lining by a connecting rod that drives the scraping member at the exhaust port when moving up and down Move between the upper end and the lower end. The device of claim 18, wherein the venting region further comprises a lever, the scraping member is coupled to the first end of the lever, and the second end of the lever is coupled to the second end by a link Lifting the lining. The device of claim 21, wherein the first end of the lever lifts the scraping member by a jacking rod, and the lever pivot point is lower than the lower end of the exhaust port. The device of claim 22, wherein the bottom of the storage chamber further comprises a partition plate, the lever being located below the partition plate. The device of claim 23, wherein the jacking rod moves up and down along the inside of the side wall of the isolating device, and the scraping member moves between the upper and lower ends of the opening along the inner side of the side wall of the isolating device. The device of claim 15 wherein the scraping member is located within the storage chamber and moves between the upper and lower ends of the opening along the outside of the side wall of the spacer. The device of claim 15, wherein the storage chamber comprises at least one anti-sediment reflux device, the anti-sediment reflux device comprising a downwardly inclined plate. The device of claim 15 wherein the scraping member further comprises an extension that extends at least partially into the vent. A cleaning method for cleaning a chemical vapor deposition apparatus according to any one of claims 15 to 27, comprising: moving the scraping member to move it near the exhaust port to scrape A deposit deposited on the exhaust port. The cleaning method of claim 28, wherein the liftable lining in the reaction chamber is moved up and down to drive the scraping member to move up and down. The cleaning method of claim 29, wherein the liftable lining and the scraping member are linked by a connecting rod or the lever.