TW201611380A - Electric storage system containing a discrete disc-shaped element, discrete disc-shaped element and method for producing and using the same - Google Patents

Abstract

The invention relates to an electric storage element comprising at least one discrete disk-shaped element with increased transparency to high-energy electric radiation, and to a discrete disk-shaped element having an increased transparency to high-energy electric radiation, as well as to the manufacture thereof.

Description

Power storage system including dish-shaped discrete components, dish-shaped discrete components, and manufacturing method and use thereof

The present invention relates to an electrical storage system comprising at least one discrete dish-shaped element having high transparency for high-energy electrical radiation; and a discrete dish-shaped element having high transparency for high-energy electrical radiation; and its manufacture.

Power storage systems have long been known, including batteries, and can also include so-called "supercapacitors." Power storage systems can achieve higher energy density. Therefore, there have been discussions on the application of so-called "lithium-ion batteries" in emerging fields such as electric mobility. In recent years, they have also been applied to smart phones or laptops. Discussion of portable devices. The main feature of such conventional rechargeable lithium ion batteries is the use of organic solvent based liquid electrolytes. However, the liquid electrolyte is flammable and poses a safety hazard when using such a lithium ion battery. The organic electrolyte can be replaced by a solid electrolyte. The conductivity of such solid electrolytes is generally much lower (i.e., different orders of magnitude) than the corresponding liquid electrolyte. In order to obtain acceptable conductivity and to take advantage of the rechargeable lithium ion battery, such solid batteries are currently mainly manufactured in the form of so-called "thin film cells" (TFB), that is, thin film electricity storage elements. It is mainly used in action applications such as so-called "smart cards", medical technology and sensing organizations and smart phones, as well as in other applications where smart, miniaturized or even flexible energy sources are required.

US 2008/0001577 describes an exemplary thin film storage element based on lithium, which typically consists of a substrate to which a first coating step is applied for Two-electrode electronic current collector. In a subsequent process, the cathode material is first deposited on a current collector for the cathode (typically lithium cobalt oxide LCO). The next step is the deposition of a solid electrolyte, which generally refers to an amorphous material composed of materials such as lithium, oxygen, nitrogen, and phosphorus, and the amorphous material is referred to as LiPON. The next step is to deposit an anode material in a manner that combines with the substrate, the current collector for the anode, and the solid electrolyte. The anode material is especially metallic lithium. When the two current collectors are electrically connected, lithium ions migrate from the anode toward the cathode due to the solid ion conductor in a charged state. In this case, a current from the cathode to the anode is generated due to the conductive connection of the two current collectors. . Conversely, in the uncharged state, the battery can be charged by applying an external voltage to force ions to migrate from the cathode toward the anode.

US 2001/0032666 A1 also describes an exemplary thin film electrical storage element that also includes a substrate onto which various functional layers need to be deposited.

In general, the layer deposited for such a thin film storage element has a layer thickness of 20 μm or less, usually less than 10 μm, or even less than 5 μm; the total thickness of the layer structure may be 100 μm or less.

The thin film storage element in the present application refers to, for example, a rechargeable lithium-based thin film storage element and a supercapacitor; however, the present invention is not limited to such systems, and the present invention can also be applied to more thin film storage elements such as rechargeable and / or printed on a thin film battery.

Thin film storage elements are typically fabricated by a number of complex coating methods, which also include structured deposition of the materials. A very complicated structuring treatment can be carried out for each specific thin film storage element, see US Pat. No. 7,494,742 B2. In addition, when lithium-based thin film storage elements are involved, strong reactivity is caused by the use of metallic lithium as an anode material. For example, it must be as anhydrous as possible Metallic lithium is transported under the conditions, otherwise it will react to lithium hydroxide and lose its function as an anode. In addition, lithium-based thin film storage elements must be packaged to protect them from moisture.

No. 7,494,742 B2 describes such a package for providing protection to non-stable components of thin film storage elements, such as lithium or certain lithium compounds. In this case, the packaging function is carried out by a coating or by a system of different coatings, which can perform more functions in the entire structure of the battery.

Further, in the manufacturing conditions of lithium-based thin film storage elements, particularly in the so-called annealing or tempering step required to form a crystal structure suitable for lithium insertion, moving lithium ions may cause harmful side reactions with the substrate because lithium has Higher mobility and ease of diffusion to common substrate materials, see publication US 2010/0104942.

Another difficulty with thin film storage elements is the substrate material used. The prior art describes a number of different substrate materials such as germanium, mica, various metals, and ceramic materials. The application of glass has been mentioned many times, but its detailed composition or specific characteristics have not been mentioned in general.

US 2001/0032666 A1 describes a capacitor-like accumulator, which can also be referred to as a lithium ion battery. The substrate material in this case mainly refers to a semiconductor.

No. 6,906,436 B2 describes a solid battery which can, for example, use a metal foil, a semiconductor material or a plastic film as the substrate material.

US 6906436 B2 lists various possibilities as possible substrate materials, such as metal or metal coatings, semiconductor materials or insulators such as sapphire, ceramic or plastic. This substrate can take on different shapes.

US 7494742 B2 mainly lists metals, semiconductors, silicates and glasses, and inorganic or organic polymers as substrate materials.

US 7211351 B2 lists metal, semiconductor or insulating materials and combinations thereof as substrates.

US 2008/0001577 A1 lists semiconductor, metal or plastic films as substrates.

The substrate in EP 2 434 567 A2 is a conductive material (such as a metal), an insulating material (such as ceramic or plastic) and a semiconductive material (such as germanium) and a combination of a semiconductor and a conductor, or a complex structure for adjusting the coefficient of thermal expansion. . The above-mentioned materials and the like are also listed in the publications US 2008/0032236 A1, US Pat. No. 8228023 B2 and US 2010/0104942 A1.

On the other hand, US 2010/0104942 A1 lists only substrates made of the following materials as usable substrate materials: metals and metal alloys having a high melting point, and dielectric materials such as high-temperature quartz, germanium wafers, and aluminum oxide. The reason for this is that when a cathode is produced by a lithium cobalt oxide (LCO) which is generally used, it is necessary to carry out heat treatment at a temperature of 400 ° C or higher, particularly at a temperature of 500 ° C or higher and higher, in order to store Li ⁺ ions. An excellent crystal structure is obtained in this material, so that a polymer or inorganic material having a lower softening temperature cannot be used. However, metals and metal alloys and dielectric materials also have various difficulties: for example, dielectric materials are often fragile and cannot be applied to lower cost roll-to-roll processes, while metals and metal alloys are used during high temperature processing of cathode materials. Oxidation occurs. In order to overcome the above difficulties, US 2010/0104942 A1 proposes a substrate composed of different metals or ruthenium in which the oxidation-reduction potentials of mutually bonded materials match each other, thereby causing controlled oxidation.

The higher substrate thermal load strengths required by the aforementioned US 2010/0104942 A1 are also discussed in many instances. For example, after adjusting the processing conditions, a substrate having a thermal load strength of 450 ° C or lower can also be used. Preconditions, however, are the deposition method in which the substrate is heated and/or the sputtering gas mixture consisting of O ₂ and Ar is optimized and/or biased and/or a second sputtering plasma is applied in the vicinity of the substrate. For example, in US 2014/0030449 A1, Tintignac et al., Journal of Power Sources 245 (2014), 76-82 or Ensling, D., Photoelektronische Untersuchung der elektronischen Struktur dünner Lithiumkobaltoxidschichten, Dissertation, technische Universität Darmstadt 2006 (Ensling, D. He has published relevant materials in the "Photoelectron Research on the Electronic Structure of Lithium-Cobalt Oxide Thin Films", Da Shihta University of Technology, 2006 Ph.D. Thesis. However, in general, such processing technology adjustment measures are relatively expensive, and depending on the specific processing method, especially in the case of continuous coating of the wafer, it is difficult to achieve in a reasonable manner.

US 2012/0040211 A1 describes a glass film used as a substrate having a maximum thickness of 300 μm and a surface roughness of not more than 100 Å. Such a small roughness is necessary because the layers of the thin film storage element usually have a very small layer thickness. Even small surface irregularities may cause severe failure of the functional layer of the thin film storage element, resulting in overall failure of the battery.

WO 2014062676 A1 describes a thin film battery comprising a substrate made of glass or ceramic having a thermal expansion coefficient of 7 to 10 ppm/K at 25 to 800 ° C. With this solution, the cathode of such a battery is even at the thickness of the cathode layer. A particularly crack-free structure can also be achieved when increased. However, the case does not indicate substrate roughness, substrate transmission characteristics, and substrate thickness variation.

In summary, the difficulty of the conventional thin film storage element is that the material used is corrosive, especially in the case of using metallic lithium, which causes a complicated layer structure to increase the cost, and another problem is the type of the substrate, the substrate. In particular, it should be non-conductive, flexible, resistant to high temperatures and extremely inert to the functional layers used for the storage elements. It is also possible to deposit as much defect-free layer as possible on the substrate with good interlayer adhesion. However, practice has shown that the use of substrates having a very low surface roughness, such as the glass film proposed in US 2012/0040211 A1, or the substrate of WO 2014062676 A1 (which has a coefficient of thermal expansion matching the cathode layer), may also be due to cracks and/or The layer is detached and layer failure occurs. See US 2014/0030449 A1. However, as described above, the above-mentioned method of avoiding a high annealing temperature by applying a bias voltage when manufacturing a lithium cobalt oxide layer is difficult to combine with the usual in-line processing for manufacturing a thin film electricity storage element, and therefore, the processing technique In general, it is preferred to use a substrate resistant to high temperatures.

Another challenge with all substrate materials, regardless of their detailed composition, is the various processing solutions for ultra-thin glass. The so-called "carrier solution" consists in temporarily fixing the ultra-thin glass to a gasket before the coating process or the transfer process or during the coating process or the transfer process. This can be done with electrostatic force or with some peelable organic bonding material. In particular, when such an organic bonding material is employed, it is necessary to achieve peeling by selecting a substrate or a carrier (both of which are usually made of the same material), that is, separation of the substrate from the carrier. Such peeling typically causes torsional stresses in the substrate, where such stresses may also be transferred to the layers on the substrate, which may also cause cracks and/or delamination, which may exacerbate layer errors caused by substrate thickness fluctuations. .

It is an object of the present invention to provide an electric storage device which is improved in durability and flexibility. Another aspect of the present invention is to provide a dish-shaped discrete component that is applied to a power storage system.

The solution of the present invention for achieving the above object is a discrete dish member having the features of claim 21 of the patent application. A storage element, in particular a thin film storage element for achieving the above object, preferably including a patent application scope The feature of item 1.

In view of the above, it is an object of the present invention to provide an electrical storage component, particularly a thin film electrical storage component, which overcomes the deficiencies of the prior art and achieves low cost manufacturing of the thin film electrical storage component. Another object of the present invention is to provide a dish-shaped member for use in an electric storage device and its manufacture and use.

The present invention has surprisingly found that the above objects of the present invention can be easily achieved by the power storage system of claim 1 and the dish-shaped discrete elements of claim 21 of the patent application.

That is, the present inventors have unexpectedly discovered that a high-energy electromagnetic radiation having a wavelength of preferably 200 to 400 nm can be applied to the deposited lithium cobalt oxide to positively affect the phase transition of lithium cobalt oxide (LCO). The reason for this is that the lithium cobalt oxide is greatly absorbed in this range and the energy is applied from the cubic closest packed phase to the hexagonal closest packing. As we all know, LCO preferably has a strong high temperature modification, because it will balance the specific capacitance input (130 to 140 mAh/g) compared with the cubic LT phase (80 mAh/g), see Ensling, D., Dissertation, Technische Universität Darmstadt 2006. Among them, in terms of effective processing technology, it is preferred to apply lithium cobalt oxide through the substrate. Therefore, it is necessary to use a substrate which has high high-energy electromagnetic radiation preferably in the wavelength range of 200 to 400 nm. transparency.

According to the invention, such a substrate having high transparency for high energy electrical radiation consists of a dish-shaped discrete element.

The dish shape in this application refers to a molded body having an extent that extends in a spatial direction less than at least one order of magnitude along the other two spatial directions. Discrete in this application refers to a molded body that can be separated from the power storage system, that is, it can also exist alone.

A further advantage of such a dish-shaped discrete component constructed in a power storage system is that it effectively bonds the substrate to the carrier because the organic bonding material typically used is cured by the application of ultraviolet light, especially in the case of bonding using temporary bonding. In the case of materials, the stripping operation is assisted, which prevents layer defects from being detrimental during the separation operation or complex processing, and - curing of the polymer, thereby providing a package to protect against oxygen and/or hydrogen Contact with a highly reactive layer of the storage element is described in DE 10 2012 206 273 A1.

Among them, it is preferable to use a high-energy optical energy source such as an excimer laser for optical processing, that is, to treat the storage element with high-energy electromagnetic radiation.

Preferably, the dish-shaped discrete element is characterized by high transparency in the case of a characteristic wavelength of a so-called "excimer laser". Listed below are common excimer lasers and their characteristic wavelengths:

However, conventional ultraviolet lamps (such as mercury vapor lamps) can also be used as the ultraviolet source.

The total thickness variation (ttv) of the dish-shaped component of the present invention relative to the wafer or substrate size used is <25 μm, preferably <15 μm, preferably <10 μm, optimally <5 μm, relatively especially in 100mm. Preferably, the wafer or substrate size in the range of >100 mm diameter at a lateral dimension of 100 mm is preferred Relatively at 200mm. The wafer or substrate size in the range of >200 mm diameter at a lateral dimension of 200 mm is particularly preferred at 400 mm. The wafer or substrate size in the range of >400 mm diameter at a lateral dimension of 400 mm. That is, the information is usually for >100mm diameter and 100mm. 100mm size, preferably >200mm diameter and 200mm. 200mm size, especially good > 400mm diameter and 400mm. 400mm size, wafer or substrate size.

The thickness of the dish-shaped discrete element of the present invention is not more than 2 mm, preferably less than 1 mm, more preferably less than 500 μm, and even more preferably less than or equal to 200 μm. The thickness of the substrate is preferably 100 μm or less.

For example, disc-shaped discrete components of a desired thickness can be fabricated directly. The target thickness can also be achieved by thinning the thicker dish-shaped discrete components, for example, by one or more of grinding, etching, and polishing, in a process after fabrication or further processing.

According to an embodiment of the present invention, the dish-shaped discrete element has a water vapor transmission rate (WVTR) of <10 ^-3 g/(m ² .d), preferably <10 ^-5 g/(m ² .d). , especially better <10 ^-6 g / (m ² .d).

According to another embodiment of the present invention, the specific resistance is greater than 1.0.10 ⁶ Ohmcm under the condition of an alternating current of 350 ° C and a frequency of 50 Hz.

Another feature of the dish-shaped discrete element is a maximum heat resistance of at least 300 ° C, preferably at least 400 ° C, particularly preferably at least 500 ° C, and is in the range of 2.0.10 ^-6 /K to 10.10 ^-6 /K, preferably 2.5.10 ^-6 /K to 9.5.10 ^-6 /K, especially 3.0.10 ^-6 /K to 9.5.10 ^-6 /K linear thermal expansion coefficient α. Practice has shown that excellent layer quality can be obtained in thin film storage elements by the following relationship: the maximum load temperature θ _Max (in °C) and the linear thermal expansion coefficient α have the following relationship: 600.10 ^-6 θ _Max . α 8000.10 ^-6 , especially good 800.10 ^-6 θ _Max . α 5000.10 ^-6 .

Unless otherwise specified, the coefficient of linear thermal expansion α is given in the range of 20 to 300 °C. In the present application, α and α _{(20-300) are} common to the two names. The values given refer to the nominal average linear thermal expansion coefficient measured by static measurement according to ISO 7991.

In this application, the maximum load temperature θ _Max refers to a temperature at which the material can still maintain its shape stability completely and no decomposition reaction and/or degradation reaction has taken place. Of course, this temperature can also be defined differently depending on the materials used. In the case of oxide crystal materials, the maximum load temperature is usually given by the melting temperature; in the case of glass, it is usually the glass transition temperature T _g , wherein the decomposition temperature of the plexiglass can also be lower than T _g , in terms of metal or In the case of a metal alloy, the maximum load temperature can be approximated by the melting temperature unless the metal or metal alloy undergoes a degradation reaction below the melting temperature.

The transition temperature T _g is given by the intersection of the tangent on the two branches of the extension curve measured at a heating rate of 5 K/min. This is measured according to ISO 7884-8 or DIN 52324.

The dish-shaped element of the present invention is composed of at least one oxide or a mixture or compound of several oxides.

According to another embodiment of the invention, the at least one oxide refers to SiO ₂ .

According to another embodiment of the invention, the dish-shaped element is composed of glass. The glass in the present application refers to a material which generally adopts an inorganic structure and is mainly composed of a metal and/or a semimetal compound, and contains elements of the group VA, VIA and VIIA of the periodic table, but preferably contains oxygen. The material is characterized by an amorphous shape, that is, a three-dimensional state of non-periodic alignment and a specific resistance greater than 1.0.10 ⁶ Ohmcm. Therefore, LiPON, which is especially used as a solid ion conductor, is not suitable for the glass in the present application.

According to another embodiment of the present invention, the dish-shaped member of the present invention is obtained by a melting process.

Preferably, the dish-shaped member has a dish shape by a forming process after the melting process is completed. Among them, the forming can be carried out immediately following the melting process (so-called "hot forming"). It is also possible to first obtain a substantially amorphous window, which is then converted into a dish by reheating and mechanical deformation in the next step.

According to an embodiment of the present invention, when the dish member is formed by a thermoforming process, a stretching method such as a pulling method, a pull-up method or an overflow melting method is employed. Other thermoforming processes can also be employed, such as forming in a float process.

Instance

The following table lists some exemplary compositions of the dish-shaped elements of the present invention.

Example 1

The composition of the dish-shaped discrete elements is exemplarily given by the following composition (in wt%):

Example 2

The composition of the dish-shaped discrete elements is also exemplarily given by the following composition (in wt%): Wherein, the sum of the contents of MgO, CaO and BaO is 8 to 18% by weight.

Example 3

The composition of the dish-shaped discrete elements is also exemplarily given by the following composition (in wt%):

Example 4

A dish-shaped discrete element, exemplarily also given by the following composition (in wt%):

With the above composition, the dish-shaped discrete component obtains the following characteristics:

Example 5

Another dish-shaped discrete element is exemplarily given by the following composition (in wt%):

With the above composition, the dish-shaped discrete component obtains the following characteristics:

Example 6

Another dish-shaped discrete element is exemplarily given by the following composition (in wt%):

With the above composition, the dish-shaped discrete component obtains the following characteristics:

Example 7

A further dish-shaped discrete element, exemplarily given by the following composition (in wt%):

With the above composition, the dish-shaped discrete component obtains the following characteristics:

Example 8

A further dish-shaped discrete element, exemplarily given by the following composition (in wt%):

With the above composition, the dish-shaped discrete component obtains the following characteristics:

Example 9

A further dish-shaped discrete element, exemplarily given by the following composition (in wt%):

With the above composition, the dish-shaped discrete component obtains the following characteristics:

Example 10

Another dish-shaped discrete element is exemplarily given by the following composition (in wt%):

With the above composition, the dish-shaped discrete component obtains the following characteristics:

Example 11

A further dish-shaped discrete element, exemplarily given by the following composition (in wt%):

With the above composition, the dish-shaped discrete component obtains the following characteristics:

Example 12

Another dish-shaped discrete element is exemplarily given by the following composition (in wt%):

With the above composition, the dish-shaped discrete component obtains the following characteristics:

Example 13

A further dish-shaped discrete element, exemplarily given by the following composition (in wt%):

The glass may also contain 0 to 1% by weight: P ₂ O ₅ , SrO, BaO; and 0 to 1% by weight of a refined preparation: SnO ₂ , CeO ₂ or As ₂ O ₃ or other refined preparations.

Example 14

A further dish-shaped discrete element, exemplarily given by the following composition (in wt%):

Example 15

A further dish-shaped discrete element, exemplarily given by the following composition (in wt%):

With the above composition, the dish-shaped discrete component obtains the following characteristics:

Example 16

A further dish-shaped discrete element, exemplarily given by the following composition (in wt%):

With the above composition, the dish-shaped discrete component obtains the following characteristics:

Example 17

A further dish-shaped discrete element, exemplarily given by the following composition (in wt%):

With the above composition, the dish-shaped discrete component obtains the following characteristics:

Example 18

A further dish-shaped discrete element, exemplarily given by the following composition (in wt%):

With the above composition, the dish-shaped discrete component obtains the following characteristics:

Example 19

A further dish-shaped discrete element, exemplarily given by the following composition (in wt%):

Example 20

A further dish-shaped discrete element, exemplarily given by the following composition (in wt%):

With the above composition, the dish-shaped discrete component obtains the following characteristics:

Example 21

A further dish-shaped discrete element, exemplarily given by the following composition (in wt%):

With the above composition, the dish-shaped discrete component obtains the following characteristics:

Example 22

All of the above examples may optionally contain from 0 to 1% by weight of a refining agent, such as SnO ₂ , CeO ₂ , As ₂ O ₃ , chlorine sulfate, sulfuric acid fluoride, unless otherwise stated.

1‧‧‧Power storage system

2‧‧‧ Application as a dish-shaped discrete component of the substrate

3‧‧‧Case layer for the cathode

4‧‧‧ Current collector layer for anode

5‧‧‧ cathode

6‧‧‧ Electrolytes

7‧‧‧Anode

8‧‧‧Encapsulation layer

10‧‧‧ Implemented as a dish-shaped discrete component of a dish-shaped molded body

Fig. 1 shows a power storage system 1 of the present invention. It comprises a dish-shaped discrete element 2 used as a substrate. The substrate is plated with sequences of different layers. By way of example and not limitation, the dish-shaped discrete element 2 is first plated with the two collector layers for the cathode 3 and for the anode 4. The current collector layers are typically several microns thick and are composed of a metal such as copper, aluminum or titanium. A cathode layer 5 is deposited on the current collector layer 3. In the case where the power storage system 1 is a lithium-based thin film battery, the cathode is composed of a lithium transition metal compound, preferably an oxide thereof, such as LiCoO ₂ , LiMnO ₂ or LiFePO ₄ . Further, an electrolyte 6 is plated on the substrate at least partially overlapping the cathode layer 5, wherein in the case of a lithium-based thin film battery, the electrolyte is usually LiPON, that is, a compound of lithium and oxygen, phosphorus and nitrogen. . The power storage system 1 further includes an anode 7, which may be, for example, a lithium titanium oxide or a metallic lithium. The anode layer 7 at least partially overlaps the electrolyte layer 6 and the current collector layer 4. The battery 1 also includes an encapsulation layer 8.

In the present invention, the encapsulation or sealing of the electrical storage system 1 refers to a material that prevents or substantially mitigates the corrosive effects of fluids or other corrosive materials on the electrical storage system 1.

2 is a view of the dish-shaped discrete element of the present invention, which is constructed here as a dish-shaped molded body 10. According to the present invention, a molded body in the form of a dish or a disk represents the following case: The extent of the spatial direction is at most half the extent along the other two spatial directions. According to the present invention, the molded body in the form of a belt represents a case where the relationship between the length, the width and the thickness exists at least ten times the width and the width is at least twice the thickness.

Figure 3 is an exemplary transmission curve of the disc-shaped discrete component of the present invention in the composition of Example 4, using three different thicknesses. When the wavelength is large, a significant interference effect occurs, which is related to the measurement technique, and thus the characteristics of the discrete dish-shaped element are not exhibited.

Figure 4 shows the transmission curves for three different thicknesses of Schott AG's BOROFLOAT® 33 glass. The composition of the glass was in accordance with Example 7.

Figure 5 is a transmission data of another disc-shaped discrete component of the present invention in the composition described in Example 5, using three different thicknesses. When the wavelength is large, a significant interference effect occurs, which is related to the measurement technique, and thus the characteristics of the discrete dish-shaped element are not exhibited.

Figure 6 is a transmission data of another disc-shaped discrete component of the present invention in the composition described in Example 6, using two different thicknesses. When the wavelength is large, a significant interference effect occurs, which is related to the measurement technique, and thus the characteristics of the discrete dish-shaped element are not exhibited. Furthermore, in the case of the dish-shaped discrete element having a thickness of 30 μm, a preparation-related surface defect is produced, which increases the scattering ratio in terms of measurement technology and reduces the transmission of the dish-shaped discrete element, which is particularly It works at wavelengths greater than about 250 nm. Therefore, such preparation-related defects do not exhibit the characteristics of the discrete dish-shaped element.

Figure 7 is a transmission data of another disc-shaped discrete component of the present invention in the composition of the embodiment 10, using two different thicknesses. In the wavelength range below 400 nm, a fluorescent effect appears in the transmission curve, possibly due to the Ce contained in the composition of the dish-shaped discrete elements.

Figure 8 is a transmission data of another disc-shaped discrete component of the present invention in the composition of the embodiment 12, using two different thicknesses.

The present invention discloses a power storage system having at least one dish-shaped discrete element, which has a transmission of 0.1% or more in the range of 200 nm to 270 nm, particularly at a thickness of 30 μm, and/or preferably More than 0.5% transmission at 222 nm, more preferably greater than 0.3% transmission at 248 nm, more preferably greater than 3% transmission at 282 nm, more preferably greater than 50% transmission at 308 nm, and particularly preferably at 351 nm Having a transmission of greater than 88%, and especially at a thickness of 100 μm, having a transmission of 0.1% or more in the range of 200 nm to 270 nm and/or preferably having a transmission of more than 0.5% at 222 nm, particularly preferably at 248 nm It has a transmission greater than 0.3%, more preferably greater than 0.1% at 282 nm, more preferably greater than 30% transmission at 308 nm, and more preferably greater than 88% transmission at 351 nm.

And a power storage system comprising at least one dish-shaped discrete element, particularly at a thickness of 30 μm, having a transmission of 15% or more in the range of 200 nm to 270 nm and/or particularly preferably at 222 nm Having a transmission of greater than 0.5%, more preferably greater than 0.3% at 248 nm, more preferably greater than 3% at 282 nm, more preferably greater than 50% transmission at 308 nm, and particularly preferably at 351 nm Greater than 88% transmission.

And a power storage system including at least one dish-shaped discrete component, wherein the at least one dish-shaped discrete component has a thickness variation of not more than 25 μm, preferably not more than 15 μm, particularly preferably not more than 10 μm, and most preferably not more than 5 μm, and particularly At 100mm. The wafer or substrate size in the range of >100 mm diameter at a lateral dimension of 100 mm is preferably relatively 200 mm. The wafer or substrate size in the range of >200 mm diameter at a lateral dimension of 200 mm is particularly preferred at 400 Mm. The wafer or substrate size in the range of >400 mm diameter at a lateral dimension of 400 mm.

And a power storage system comprising at least one dish-shaped discrete component, wherein the at least one dish-shaped discrete component has a water vapor transmission rate (WVTR) of <10 ^-3 g/(m ² .d), preferably <10 ^{- 5} g / (m ² .d), especially preferably <10 ^-6 g / (m ² .d).

And a power storage system, wherein the dish-shaped discrete element has a thickness of less than 2 mm, preferably less than 1 mm, more preferably less than 500 μm, particularly preferably less than or equal to 200 μm, and most preferably less than or equal to 100 μm.

And a power storage system comprising at least one dish-shaped discrete component, wherein the at least one dish-shaped discrete component has a specific resistance greater than 1.0.10 ⁶ Ohmcm at 350 ° C and an alternating current of 50 Hz.

And an electric storage system, comprising at least one disc discrete elements, wherein the at least a maximum load temperature θ of discrete elements _Max disc is at least 300 ℃, preferably at least 400 ℃, plus at least 500 ℃.

And a power storage system comprising at least one dish-shaped discrete component, wherein the at least one dish-shaped discrete component has a linear thermal expansion coefficient α of 2.0.10 ^-6 /K to 10.10 ^-6 /K, preferably 2.5.10 ^-6 /K to 9.5.10 ^-6 /K, especially preferably 3.0.10 ^-6 /K to 9.5.10 ^-6 /K.

And a power storage system comprising at least one dish-shaped discrete component, wherein a product of a maximum load temperature θ _Max (in ° C) and a linear thermal expansion coefficient α of the at least one dish-shaped discrete component conforms to the following relationship: 600.10 ^-6 θ _Max . α 8000.10 ^-6 , especially good 800.10 ^-6 θ _Max . α ^5000.10-6.

And a power storage system, wherein the at least one dish-shaped discrete component package A mixture or compound of at least one oxide or a plurality of oxides is included.

And a power storage system, wherein the at least one dish-shaped discrete element contains SiO ₂ as an oxide.

And a power storage system, wherein the at least one dish-shaped discrete element is in the form of glass.

And a power storage system, wherein the at least one dish-shaped discrete component is dished by a melting process and a subsequent forming process.

And a power storage system, wherein the subsequent forming process refers to a stretching method.

And a power storage system, wherein at least one region of the power storage system is applied with high-energy electromagnetic radiation preferably in a wavelength range of 200 nm to 400 nm.

And a power storage system, wherein the at least one region of the power storage system to which high-energy electromagnetic radiation preferably in a wavelength range of 200 nm to 400 nm is applied is input through the dish-shaped discrete element into the high-energy electromagnetic radiation .

And a power storage system, wherein the at least one region of the power storage system to which high-energy electromagnetic radiation is applied includes lithium cobalt oxide (LCO).

And a power storage system in which lithium cobalt oxide (LCO) is affected in terms of its structural characteristics in at least one region of the power storage system to which high-energy electromagnetic radiation is applied.

And a power storage system, wherein the lithium cobalt oxide (LCO) at least partially undergoes a phase change in the at least one region of the power storage system to which high-energy electromagnetic radiation is applied.

And a power storage system, wherein the at least one portion of the lithium cobalt oxide (LCO) is in the at least one region of the power storage system to which high-energy electromagnetic radiation is applied The phase change includes a phase change from the closest packing of the cube to the closest packing of the six sides.

The present invention also discloses a dish-shaped discrete component for use in a power storage system, which has a transmission of 0.1% or more in the range of 200 nm to 270 nm and/or more preferably 0.5 or more at 222 nm, particularly at a thickness of 30 μm. % transmission, particularly preferably greater than 0.3% transmission at 248 nm, more preferably greater than 3% transmission at 282 nm, more preferably greater than 50% transmission at 308 nm, and more preferably greater than 88% at 351 nm The transmission, and in particular at a thickness of 100 μm, has a transmission of 0.1% or more in the range of 200 nm to 270 nm and/or preferably has a transmission of more than 0.5% at 222 nm, more preferably more than 0.3% at 248 nm. The transmission preferably has a transmission of greater than 0.1% at 282 nm, more preferably greater than 30% transmission at 308 nm, and more preferably greater than 88% transmission at 351 nm.

And a dish-shaped discrete component for use in a power storage system, particularly having a transmission of 15% or more in the range of 200 nm to 270 nm at a thickness of 30 μm and/or a transmission of more than 0.5% particularly preferably at 222 nm More preferably, it has a transmission of greater than 0.3% at 248 nm, more preferably greater than 3% at 282 nm, more preferably greater than 50% transmission at 308 nm, and more preferably greater than 88% transmission at 351 nm.

And a dish-shaped discrete component applied to the power storage system, the thickness of which varies by no more than 25 μm, preferably no more than 15 μm, particularly preferably no more than 10 μm, and most preferably no more than 5 μm, relatively especially at 100 mm. The wafer or substrate size in the range of >100 mm diameter at a lateral dimension of 100 mm is preferably relatively 200 mm. The wafer or substrate size in the range of >200 mm diameter at a lateral dimension of 200 mm is particularly preferred at 400 mm. >400 in the horizontal dimension of 400mm The diameter of the mm is in the range of the wafer or substrate.

And a dish-shaped discrete component applied to a power storage system having a water vapor transmission rate (WVTR) of <10 ^-3 g/(m ² .d), preferably <10 ^-5 g/(m ² .d) , especially better <10 ^-6 g / (m ² .d).

And a dish-shaped discrete component for use in a power storage system having a thickness of less than 2 mm, preferably less than 1 mm, more preferably less than 500 μm, particularly preferably less than or equal to 200 μm, and most preferably less than or equal to 100 μm.

And a dish-shaped discrete component applied to the power storage system, which has a specific resistance of more than 1.0.10 ⁶ Ohmcm under the condition of an alternating current of 350 ° C and a frequency of 50 Hz.

Applied to the power storage system and one disc of discrete elements, the maximum temperature θ _Max load of at least 300 ℃, preferably at least 400 ℃, plus at least 500 ℃.

And a dish-shaped discrete component applied to the power storage system, wherein the linear thermal expansion coefficient α is 2.0.10 ^-6 /K to 10.10 ^-6 /K, preferably 2.5.10 ^-6 /K to 9.5.10 ^{- 6} / K, particularly preferably 3.0.10 ^-6 / K to 9.5.10 ^-6 / K.

And a dish-shaped discrete component applied to the power storage system, wherein a product of a maximum load temperature θ _Max (in ° C) and a linear thermal expansion coefficient α of the at least one dish-shaped discrete component conforms to the following relationship: 600.10 ^-6 θ _Max . α 8000.10 ^-6 , especially good 800.10 ^-6 θ _Max . α 5000.10 ^-6 .

And a dish-shaped discrete element for use in a power storage system, wherein the dish-shaped discrete element comprises at least one oxide or a mixture or compound of a plurality of oxides.

And a dish-shaped discrete element applied to a power storage system, wherein the at least one oxide is SiO ₂ .

And a dish-shaped discrete component applied to a power storage system, wherein the component is composed of glass.

And a dish-shaped discrete component, wherein the component is dished by a melting process and a subsequent forming process.

And a dish-shaped discrete element, wherein the subsequent forming process comprises a stretching method.

Such thicker or thinner discrete dish-shaped elements are also within the scope of the invention in the case where a thicker or thinner discrete dish-shaped element can also achieve a value of an independent term after being converted to a thickness of 30 μm. To determine if a thicker substrate is within the scope of the invention, it can be thinned to a thickness of 30 μm.

The thinner discrete components can also be made to have a thickness of 30 μm by lamination and the necessary thinning process, so that the transmission can be physically measured in addition to the conversion to determine whether such thinner substrates are invented. Within the scope of protection.

1‧‧‧Power storage system

2‧‧‧ Application as a dish-shaped discrete component of the substrate

3‧‧‧Case layer for the cathode

4‧‧‧ Current collector layer for anode

5‧‧‧ cathode

6‧‧‧ Electrolytes

7‧‧‧Anode

8‧‧‧Encapsulation layer

Claims (34)

A power storage system having at least one dish-shaped discrete element, in particular having a thickness of 30 μm, having a transmission of 0.1% or more in the range of 200 nm to 270 nm and/or preferably having a thickness of 222 nm More than 0.5% transmission, particularly preferably greater than 0.3% transmission at 248 nm, more preferably greater than 3% transmission at 282 nm, more preferably greater than 50% transmission at 308 nm, and more preferably greater than 351 nm at 351 nm 88% transmission, and especially at a thickness of 100 μm, having a transmission of 0.1% or more in the range of 200 nm to 270 nm and/or preferably having a transmission of more than 0.5% at 222 nm, more preferably greater than 248 nm. A transmission of 0.3%, particularly preferably greater than 0.1% at 282 nm, particularly preferably greater than 30% at 308 nm, and more preferably greater than 88% at 351 nm. A power storage system having at least one dish-shaped discrete element according to claim 1, wherein the at least one dish-shaped discrete element has a transmission of 15% or more in the range of 200 nm to 270 nm, particularly at a thickness of 30 μm. Or preferably more than 0.5% transmission at 222 nm, more preferably greater than 0.3% transmission at 248 nm, more preferably greater than 3% transmission at 282 nm, and more preferably greater than 50% transmission at 308 nm, and It is especially preferred to have a transmission of greater than 88% at 351 nm. A power storage system according to any one of the preceding claims, comprising at least one dish-shaped discrete element, wherein the at least one dish-shaped discrete element has a thickness variation of not more than 25 μm, preferably not more than 15 μm, particularly preferably not more than 10 μm, most Good is not more than 5μm, relatively especially at 100mm. The wafer or substrate size in the range of >100 mm diameter at a lateral dimension of 100 mm is preferably relatively 200 mm. The relative size of the wafer or substrate in the range of >200 mm diameter in the transverse dimension of 200 mm, especially relative Especially at 400mm. The wafer or substrate size in the range of >400 mm diameter at a lateral dimension of 400 mm. A power storage system according to any one of the preceding claims, comprising at least one dish-shaped discrete element, wherein the at least one dish-shaped discrete element has a water vapor transmission rate (WVTR) of <10 ^-3 g/(m ² . d), preferably <10 ^-5 g/(m ² .d), especially preferably <10 ^-6 g/(m ² .d). A power storage system according to any one of the preceding claims, wherein the dish-shaped discrete element has a thickness of less than 2 mm, preferably less than 1 mm, more preferably less than 500 μm, particularly preferably less than or equal to 200 μm, most preferably less than or equal to 100 μm. A power storage system according to any one of the preceding claims, comprising at least one dish-shaped discrete component, wherein the at least one dish-shaped discrete component has a specific resistance greater than 1.0.10 at 350 ° C and a frequency of 50 Hz alternating current. ⁶ Ohmcm. A power storage system according to any one of the preceding claims, comprising at least one dish-shaped discrete element, wherein the at least one dish-shaped discrete element has a maximum load temperature θ _Max of at least 300 ° C, preferably at least 400 ° C, and particularly preferably at least 500 ° C. The aforementioned patent application in any range of a power storage system, comprising at least one disc discrete elements, wherein at least the linear thermal expansion coefficient α of the discrete elements of a disc 2.0.10 ^-6 / K to 10.10 ^-6 / K, preferably from 2.5.10 ^-6 /K to 9.5.10 ^-6 /K, particularly preferably from 3.0.10 ^-6 /K to 9.5.10 ^-6 /K. A power storage system according to any one of the preceding claims, comprising at least one dish-shaped discrete element, wherein a product of a maximum load temperature θ _Max (in ° C) and a linear thermal expansion coefficient α of the at least one dish-shaped discrete element meets the following Relationship: 600.10 ^-6 θ _Max . α 8000.10 ^-6 , especially good 800.10 ^-6 θ _Max . α 5000.10 ^-6 . A power storage system according to any one of the preceding claims, wherein the at least one The dish-shaped discrete elements comprise at least one oxide or a mixture or compound of a plurality of oxides. A power storage system according to any one of the preceding claims, wherein the at least one dish-shaped discrete element contains SiO ₂ as an oxide. A power storage system according to any one of the preceding claims, wherein the at least one dish-shaped discrete element is in the form of glass. The power storage system of claim 12, wherein the at least one dish-shaped discrete component is dished by a melting process and a subsequent forming process. The power storage system of claim 13, wherein the subsequent forming process refers to a stretching method. A power storage system according to any one of the preceding claims, wherein at least one region of the power storage system is applied with high-energy electromagnetic radiation preferably in a wavelength range of 200 nm to 400 nm. The power storage system of claim 15, wherein the at least one region of the power storage system to which high-energy electromagnetic radiation in a wavelength range of preferably 200 nm to 400 nm is applied is passed through the dish-shaped discrete component. The high energy electromagnetic radiation is input. The power storage system of claim 15 or 16, wherein the at least one region of the power storage system to which high-energy electromagnetic radiation is applied comprises lithium cobalt oxide (LCO). The power storage system of claim 17, wherein the lithium cobalt oxide (LCO) is affected in terms of its structural characteristics in the at least one region of the power storage system to which high-energy electromagnetic radiation is applied. The power storage system of claim 17 or 18, wherein the lithium cobalt oxide is in the at least one region of the power storage system to which high-energy electromagnetic radiation is applied (LCO) at least partial phase change occurs. The power storage system of claim 19, wherein the at least partial phase change of the lithium cobalt oxide (LCO) comprises at least a sub-cube density in the at least one region of the power storage system to which high-energy electromagnetic radiation is applied. Stacking the phase change that is closest to the six sides. A dish-shaped discrete component for use in a power storage system, characterized in that it has a transmission of 0.1% or more in the range of 200 nm to 270 nm and/or more preferably 0.5% or more at 222 nm, particularly at a thickness of 30 μm. The transmission preferably has a transmission of greater than 0.3% at 248 nm, more preferably greater than 3% at 282 nm, more preferably greater than 50% transmission at 308 nm, and more preferably greater than 88% at 351 nm. Transmission, and in particular at a thickness of 100 μm, having a transmission of 0.1% or more in the range of 200 nm to 270 nm and/or more preferably a transmission of more than 0.5% at 222 nm, more preferably more than 0.3% at 248 nm. Transmission, particularly preferably greater than 0.1% transmission at 282 nm, more preferably greater than 30% transmission at 308 nm, and more preferably greater than 88% transmission at 351 nm. A dish-shaped discrete component for use in a power storage system according to claim 21, wherein, in particular, at a thickness of 30 μm, a transmission of 15% or more in the range of 200 nm to 270 nm and/or particularly preferably at 222 nm The transmission has a transmittance of more than 0.5%, more preferably greater than 0.3% at 248 nm, more preferably greater than 3% at 282 nm, more preferably greater than 50% transmission at 308 nm, and particularly preferably at 351 nm. Has a transmission greater than 88%. The disc-shaped discrete component applied to the electric storage system according to claim 21 or 22, wherein the thickness variation is not more than 25 μm, preferably not more than 15 μm, particularly preferably not more than 10 μm, and most preferably not more than 5 μm, and particularly At 100mm. The wafer or substrate size in the range of >100 mm diameter at a lateral dimension of 100 mm Good is especially at 200mm. The wafer or substrate size in the range of >200 mm diameter at a lateral dimension of 200 mm is particularly preferred at 400 mm. The wafer or substrate size in the range of >400 mm diameter at a lateral dimension of 400 mm. A dish-shaped discrete component for use in a power storage system according to any one of claims 21 to 23, wherein the water vapor transmission rate (WVTR) is <10 ^-3 g/(m ² .d), Preferably <10 ^-5 g/(m ² .d), especially preferably <10 ^-6 g/(m ² .d). A disc-shaped discrete component for use in a power storage system according to any one of claims 21 to 24, wherein the thickness is less than 2 mm, preferably less than 1 mm, more preferably less than 500 μm, and particularly preferably less than or equal to 200 μm, preferably Less than or equal to 100 μm. A dish-shaped discrete component applied to a power storage system according to any one of claims 21 to 25, wherein the specific resistance is greater than 1.0.10 ⁶ Ohmcm under the condition of an alternating current of 350 ° C and a frequency of 50 Hz. A dish-shaped discrete component for use in a power storage system according to any one of claims 21 to 26, wherein the maximum load temperature θ _Max is at least 300 ° C, preferably at least 400 ° C, and particularly preferably at least 500 ° C. The disc-shaped discrete element applied to the electric storage system according to any one of claims 21 to 27, wherein the linear thermal expansion coefficient α is 2.0.10 ^-6 /K to 10.10 ^-6 /K, preferably. It is from 2.5.10 ^-6 /K to 9.5.10 ^-6 /K, and particularly preferably from 3.0.10 ^-6 /K to 9.5.10 ^-6 /K. The disc-shaped discrete element applied to the electric storage system according to any one of claims 21 to 28, wherein the maximum load temperature θ _Max (in ° C) and the linear thermal expansion coefficient α of the at least one disc-shaped discrete element The product of the following is in accordance with the following relationship: 600.10 ^-6 θ _Max. α 8000.10 ^-6 , especially good 800.10 ^-6 θ _Max . α 5000.10 ^-6 . A dish-shaped discrete element for use in a power storage system according to any one of claims 21 to 29, wherein the dish-shaped discrete element comprises at least one oxide or a mixture or compound of a plurality of oxides. A dish-shaped discrete element applied to a power storage system according to any one of claims 21 to 30, wherein the at least one oxide is SiO ₂ . A dish-shaped discrete element applied to a power storage system according to any one of claims 21 to 31, wherein the element is composed of glass. A dish-shaped discrete element applied to a power storage system according to any one of claims 21 to 32, wherein the element is dished by a melting process and a subsequent forming process. A dish-shaped discrete element applied to a power storage system according to any one of claims 21 to 33, wherein the subsequent forming process comprises a stretching method.