TW201610794A - Fabricating method of mesh conductive pattern and touch panel - Google Patents

Abstract

A fabricating method of a conductive mesh pattern is provided. A conductive material layer is formed on a substrate. A laser annealing process is performed on the conductive material layer, and therefore the conductive material layer includes a crystalline portion and a non-crystalline portion, wherein the crystalline portion shapes as mesh. A selective etching process is performed on the conductive material layer, so that the non-crystalline portion is removed, and the crystalline portion is formed as a crystalline mesh layer. An electroplating or electroless plating process is performed on the crystalline mesh layer, and therefore a metal mesh layer is formed on the crystalline mesh layer.

Description

Method for manufacturing mesh conductive pattern and touch panel

The present invention relates to a method for fabricating a conductor pattern and a panel, and more particularly to a method for fabricating a mesh conductive pattern and a touch panel.

In recent years, with the rapid development of various applications such as information technology, wireless mobile communication and information appliances, display panels have been widely used in electronic products. In addition, in order to achieve the convenience of carrying, the volume is light, and the operation is user-friendly, many information products replace the traditional keyboard or mouse as an input device with a touch panel.

Considering the display quality of the display panel and the application range of the touch panel, a transparent conductor material with good light transmittance is generally used as the touch component in the touch panel. In addition, in order to reduce the visibility and impedance of the touch element, a mesh layer of a metal or alloy material is further used to fabricate the touch element. However, the existing thin line width process is generally a lithography process, that is, the photoresist layer is first patterned with yellow light to form a photoresist layer having a desired pattern, and the photoresist layer is wetted by the photoresist layer. The metal layer is patterned by etching. Among them, the bottleneck encountered is the poor resolution of Huang Guang. Therefore, it may be difficult to expose and develop a photoresist pattern having a desired line width. Furthermore, even if a photoresist pattern having a desired line width is formed, the subsequent wet etching of the metal layer often faces the problem that the etching rate is not easily controlled. When the line width to be reached is thinner, it is easy to cause doubts about disconnection. In addition, the wet etching of a large area is also difficult to control the uniformity, and the etchant such as strong acid is dangerous. Therefore, there is a need in the art for a method of forming a mesh conductive pattern.

The invention provides a method for fabricating a mesh-shaped conductive pattern, and a mesh-shaped conductive pattern having a thin line width is formed by a laser process.

The invention further provides a touch panel, wherein the sensing electrode has a thin line width and a high transmittance, and thus has a good display quality as a whole.

The method for fabricating the mesh conductive pattern of the present invention comprises the following steps. A layer of conductive material is formed on a substrate. A laser annealing process is performed on the conductor material layer such that the conductor material layer has a crystalline portion and an amorphous portion, wherein the crystalline portion is in the form of a network. A selective etching process is performed on the conductor material layer to remove the amorphous portion such that the crystalline portion forms a network layer. The mesh crystal layer is subjected to an electroplating or electroless plating process to form a mesh metal layer on the reticulated crystal layer.

In an embodiment of the invention, the conductive material layer comprises a transparent conductive oxide material.

In an embodiment of the invention, the conductive material layer comprises indium tin oxide, aluminum zinc oxide or gallium zinc oxide.

In an embodiment of the invention, the selective etching process includes using an oxalic acid solution.

In an embodiment of the invention, the metal material used in the electroplating or electroless plating process comprises copper (Cu), aluminum (Al), molybdenum (Mo) or silver (Ag).

In an embodiment of the invention, the method further comprises performing an electroplating or electroless plating process on the mesh metal layer to form another mesh metal layer on the mesh metal layer.

In an embodiment of the invention, before performing the laser annealing process, a preheating process is further performed on the conductive material layer, wherein the temperature of the preheating process is lower than the crystallization temperature of the conductive material layer.

The touch panel of the present invention includes a substrate and a plurality of sensing electrodes. The sensing electrode is disposed on the substrate, wherein the at least one sensing electrode has a conductive pattern, and the conductive pattern comprises: a crystalline layer and a metal layer. The metal layer is disposed on the crystalline layer.

In an embodiment of the invention, the crystal layer has a crystal size of 5 nm to 18 nm.

In an embodiment of the invention, the sidewall of the crystal layer has a wavy profile, and the sidewall of the metal layer has a wavy profile.

In an embodiment of the invention, the metal layer is further located on a sidewall of the crystalline layer.

In an embodiment of the invention, the thickness ratio of the metal layer to the crystal layer is greater than 10.

In an embodiment of the invention, the crystal layer has a thickness of 10 nm to 200 nm.

In an embodiment of the invention, the metal layer has a thickness of 100 nm to 1 um.

In an embodiment of the invention, the crystal layer has a line width of less than 2 um.

In an embodiment of the invention, the material of the crystalline layer comprises a transparent conductive oxide.

In an embodiment of the invention, the material of the crystalline layer comprises indium tin oxide, aluminum zinc oxide or gallium zinc oxide.

In an embodiment of the invention, the material of the metal layer comprises copper (Cu), aluminum (Al), molybdenum (Mo) or silver (Ag).

In an embodiment of the invention, the conductive pattern comprises a plurality of mesh compartments, each grid being a regular polygon or an irregular polygon.

In an embodiment of the invention, the metal layer comprises a plurality of metal layers stacked on each other.

In an embodiment of the invention, the sensing electrode includes a plurality of first sensing electrodes and a plurality of second sensing electrodes, and the first sensing electrodes and the second sensing electrodes are signal-independent of each other.

In an embodiment of the invention, the second touch electrode and the first touch electrodes are staggered with each other.

In an embodiment of the invention, each of the first sensing electrodes includes a plurality of first sensing pads and a plurality of first bridge wires, the first bridge wires connecting two adjacent first sensing pads Each of the second sensing electrodes includes a plurality of second sensing pads and a plurality of second bridge wires, and the second bridge wires connect the two adjacent second sensing pads in series.

In an embodiment of the invention, the first bridge wire of each of the first sensing electrodes is integrally formed with the first sensing pad.

In an embodiment of the invention, the second bridge wire of each of the second sensing electrodes is integrally formed with the second sensing pad.

In an embodiment of the invention, a cover plate is further included, and at least one of the first sensing electrode and the second sensing electrode is located between the substrate and the cover plate.

In an embodiment of the invention, a first insulating film is further disposed, the second sensing electrode is located on the first insulating film, and the first sensing electrode is located between the first insulating film and the substrate.

In an embodiment of the invention, a second insulating film is further disposed between the first sensing electrode and the substrate.

In an embodiment of the invention, the first sensing electrode and the second sensing electrode are respectively located on opposite surfaces of the substrate.

In an embodiment of the invention, a light shielding pattern is further disposed on the substrate, and at least one of the first sensing electrode and the second sensing electrode is located on the light shielding pattern.

Based on the above, the present invention firstly obtains a network layer having a desired line width through a laser process and an etching process, and then forms a network metal layer on the network layer as an electrode by electroplating or electroless plating. A mesh-like conductive pattern having a double-layered conductor material is thus formed. Therefore, the present invention can overcome the problem of poor resolution of the yellow light process, and the disconnection and etching rate and etching which may exist when etching the metal material. The problem of uniformity is not easy to control. Therefore, the method for fabricating the mesh-shaped conductive pattern of the present invention has a simple step and a good yield, and can form a mesh-like conductive pattern having a fine line width, good transparency, and good conductivity. In this way, when the conductive pattern is applied as a touch element to the touch panel, the touch panel as a whole has good touch quality and visual quality.

The above described features and advantages of the invention will be apparent from the following description.

1‧‧‧Touch display panel

10‧‧‧Active component array substrate

20‧‧‧ Display media layer

100‧‧‧ mesh conductive pattern

102, 210‧‧‧ substrate

110‧‧‧layer of conductor material

110a‧‧‧Amorphous part

110p‧‧‧crystal part

200, TP‧‧‧ touch panel

220, 230‧‧‧ electrodes

222, 232‧‧‧ Sense pads

224, 234‧‧ ‧ bridge wiring

242‧‧‧Insulation pattern

250‧‧‧Transmission line

d‧‧‧Line width

D1, D2‧‧‧ direction

S‧‧‧ side wall

S1, S2, S3‧‧‧ surface

AD‧‧‧Adhesive layer

CE‧‧‧Common electrode

CF‧‧‧ color filters

CG‧‧‧ cover

DP‧‧‧ display panel

SP‧‧‧Electroplating or electroless plating

LAP‧‧‧Laser Annealing Process

SEP‧‧‧Selective Etching Process

FIG. 1A to FIG. 1D are schematic diagrams showing a top view of a method for fabricating a mesh-shaped conductive pattern according to an embodiment of the invention.

2A to 2D are schematic cross-sectional views of the cross-sectional line I-I' of Figs. 1A to 1D.

3 is a partial top plan view of a mesh conductive pattern according to an embodiment of the invention.

4 is a cross-sectional view showing a mesh conductive pattern according to an embodiment of the present invention.

FIG. 5A is a top view of a mesh conductive pattern according to an embodiment of the invention. FIG.

FIG. 5B is a top view of a mesh conductive pattern according to an embodiment of the invention.

FIG. 5C illustrates a top view of a mesh conductive pattern according to an embodiment of the invention. schematic diagram.

FIG. 6 is a top plan view of a touch panel in accordance with a first embodiment of the present invention.

7A and 7B are schematic cross-sectional views showing a line A-A' and a line B-B' in Fig. 6, respectively.

FIG. 8 is a cross-sectional view of a touch panel in accordance with an embodiment of the invention.

FIG. 9 is a cross-sectional view of a touch panel in accordance with an embodiment of the invention.

FIG. 10 is a cross-sectional view of a touch display panel according to an embodiment of the invention.

1A to 1D are schematic top plan views showing a method of fabricating a mesh-shaped conductive pattern according to an embodiment of the present invention, and FIGS. 2A to 2D are cross-sectional views taken along line I-I' of FIG. 1A to FIG. Schematic diagram of the process. Referring to FIG. 1A and FIG. 2A simultaneously, first, a conductive material layer 110 is formed on a substrate 102. In the present embodiment, the substrate 102 is, for example, a glass substrate. The conductor material layer 110 is an amorphous material, and the amorphous material can be converted into a crystalline material at a crystallization temperature. In the present embodiment, the conductive material layer 110 is, for example, a transparent conductive oxide (TCO) such as indium tin oxide (ITO), aluminum zinc oxide (AZO) or gallium zinc oxide (GZO). In this embodiment, the conductor material layer The thickness of 110 is, for example, about 10 nm to 200 nm. The method of forming the conductor material layer 110 is, for example, a low temperature sputtering process.

Referring to FIG. 1B and FIG. 2B simultaneously, a conductive annealing process LAP is performed on the conductive material layer 110, so that the conductive material layer 110 has a crystalline portion 110p and an amorphous portion 110a, wherein the crystalline portion 110p It is mesh. In detail, a portion of the conductor material layer 110 is converted into the crystal portion 110p by a laser annealing process, and the remaining portion not subjected to the laser treatment is the amorphous portion 110a. Wherein, the laser annealing process LAP is patterned on the conductive material layer 110 to form a mesh pattern, and thus the crystal portion 110p has a mesh shape. In this embodiment, the laser spot size of the laser annealing process LAP is, for example, less than 8 um, and preferably less than 2 um, and the temperature of the laser annealing process LAP is, for example, 100 to 400 ° C. The crystal portion 110p may be a poly-crystalline, a single-crystalline or a micro-crystalline. Since the mesh pattern can be patterned in the conductor material layer 110 by the laser annealing process LAP, the laser annealing process LAP can be regarded as a laser annealing patterning process. It is worth mentioning that before the laser annealing process LAP, the preheating process of the conductor material layer 110 may be performed, wherein the temperature of the preheating process is lower than the crystallization temperature of the conductor material layer 110. In this way, the conductive material layer 110 having a preheating temperature can be rapidly patterned into the crystalline portion 110p and the amorphous portion 110a by the laser annealing process LAP to shorten the time of the laser annealing process LAP or reduce the laser annealing. The required energy of the process LAP, which in turn reduces the fabrication cost of the method of fabricating the mesh conductive pattern.

Please refer to FIG. 1C and FIG. 2C at the same time, and then, the conductive material layer 110 is advanced. A selective etching process SEP is performed to remove the amorphous portion 110a such that the crystalline portion 110p forms a reticulated crystalline layer 120. In the present embodiment, the selective etching process SEP includes using an etchant having an etching selectivity ratio to the crystalline portion 110p and the amorphous portion 110a, such as an oxalic acid solution. Corresponding to the laser spot size, the line width d of the reticulated crystal layer 120 is, for example, less than 8 um, and preferably less than 2 um.

Referring to FIG. 1D and FIG. 2D simultaneously, an electroplating or electroless plating process SP is performed on the reticulated crystal layer 120 to form a reticulated metal layer 130 on the reticulated crystalline layer 120; wherein electroless plating is also called electroless plating. plating. In detail, since the reticulated crystal layer 120 has electrical conductivity, it is used as an electrode in the electroplating or electroless plating process SP, so that the metal material can be plated on the surface of the reticulated crystal layer 120 to form correspondingly. The mesh metal layer 130. In the present embodiment, the metal material used in the electroplating or electroless plating process SP includes metals such as copper (Cu), aluminum (Al), molybdenum (Mo), and silver (Ag). The mesh metal layer 130 may be a single layer structure or a multilayer stack structure. When the mesh metal layer 130 is a multi-layer stack structure (not shown), the first metal layer may be formed on the reticulated crystal layer 120 by first electroplating or electroless plating, followed by second electroplating or electroless plating. The process forms a second metal layer on the first metal layer, wherein the material of the first metal layer is different from the material of the second metal layer. Of course, the above embodiment is an example in which the mesh metal layer 130 includes two metal layers as a double layer structure, but not limited thereto, that is, the mesh metal layer 130 may also include two or more metal layers. Furthermore, the outermost metal layer of the mesh metal layer 130 may be of an anti-oxidation property such as platinum (Pt), gold (Au) or the like or such as chromium (Cr), tin (Sn), nickel (Ni), molybdenum ( Mo), titanium (Ti), etc. The metal having anti-reflective properties causes the mesh metal layer 130 to have an oxidation resistant surface. For example, the mesh metal layer 130 is, for example, a two-layer structure including Cu/Pd.

In the present embodiment, the mesh conductive pattern 100 includes a mesh crystal layer 120 and a mesh metal layer 130. The mesh metal layer 130 is disposed on the mesh crystal layer 120. In the present embodiment, the line width of the mesh conductive pattern 100 is, for example, less than 2 um. The crystal size of the reticulated crystal layer 120 is, for example, 5 nm to 18 nm. The thickness ratio of the mesh metal layer 130 to the mesh crystal layer 120 is, for example, greater than 10, preferably between 10 and 50.

In the present embodiment, as shown in FIG. 3, since the reticulated crystal layer 120 is formed by the laser annealing process LAP, the sidewall S of the reticulated crystal layer 120 is, for example, wavy, and the mesh metal layer 130 is formed. The profile of the side wall S is, for example, also wavy. Furthermore, in an embodiment, as shown in FIG. 4, the electroplating or electroless plating process SP may deposit on the sidewall surface of the reticulated crystalline layer 120 in addition to depositing a metal material on the upper surface of the reticulated crystalline layer 120. Therefore, the mesh metal layer 130 may be further formed on the side wall S of the reticulated crystal layer 120. However, since the deposition by the electroplating or electroless plating process SP on the surface of the side wall S of the reticulated crystal layer 120 is limited, the thickness of the metal layer deposited on the surface of the side wall S of the reticulated crystal layer 120 is substantially smaller than that deposited on the surface of the reticulated layer 120. The thickness of the metal layer on the upper surface of the reticulated layer 120.

In this embodiment, the mesh of the mesh conductive pattern 100 is taken as a square, but the invention is not limited thereto. The mesh can be a regular polygon or an irregular polygon. For example, the mesh of the mesh conductive pattern 100 may also be a circle, a triangle, a quadrangle (as shown in FIG. 5A), a pentagon, a hexagon (as shown in FIG. 5B), and a curved shape (FIG. 5C). Shown) or a combination of the two.

In the above embodiment, the mesh annealing layer L1 having the desired line width d is obtained by the laser annealing process LAP and the selective etching process SEP, and then the mesh is used as an electrode by electroplating or electroless plating process SP. A mesh metal layer 130 is formed on the crystal layer 120, thus forming a mesh conductive pattern 100 having a double layer conductor material. That is to say, in this embodiment, the line width d of the mesh crystal layer 120 is controlled by the size of the laser spot, and the photoresist is not patterned by a yellow light process to form a patterned photoresist, thereby overcoming the yellow light. The problem of poor resolution of the process, and the mesh-like conductive pattern 100 such as less than 2 um line width is easily achieved. Furthermore, the reticulated crystal layer 120 is used as an electrode for electroplating or electroless plating process SP so that the metal material can be deposited on the reticulated crystalline layer 120 accurately and efficiently, so that a desired line width d can be obtained. The mesh conductive pattern 100. More importantly, the etching process of the metal material can be dispensed with, thereby avoiding the problem that the etching process may cause metal wire breakage and etch rate and etching uniformity to be difficult to control, and avoiding the use of dangerous etchants such as strong acid for etching metal. To improve the security of the production process.

Therefore, the method of fabricating the mesh-shaped conductive pattern of the present embodiment has a simple step and a better yield. On the other hand, since the mesh conductive pattern 100 includes the mesh metal layer 130 having a high reflectance and the mesh crystal layer 120 having a low reflectance, the mesh conductive pattern 100 is compared with the existing metal mesh structure. It has a low reflectivity and is advantageous for optical applications. Since the mesh conductive pattern has characteristics of fine line width, good overall transmittance, and good electrical conductivity, it can be widely applied to devices requiring high transmittance, such as electrodes of a display panel or a touch panel, to enhance display. The overall visual effect of the panel or touch panel. Another mention is that the crystalline layer 120 The stacking with the metal layer 130 also enhances the ability to resist electrostatic discharge (ESD), so the stacked structure is more suitable for use in a mesh conductive pattern.

Next, an embodiment in which the mesh-shaped conductive pattern 100 is applied to a touch panel will be explained. FIG. 6 is a top plan view of a touch panel in accordance with a first embodiment of the present invention. 7A and 7B are schematic cross-sectional views showing a line A-A' and a line B-B' in Fig. 6, respectively. Referring to FIG. 6 , FIG. 7A and FIG. 7B , the touch panel 200 of the present embodiment includes a substrate 210 , a plurality of first sensing electrodes 220 , and a plurality of second sensing electrodes 230 .

The first sensing electrode 220 is disposed on the substrate 210, and each of the first sensing electrodes 220 includes a plurality of first sensing pads 222 and a plurality of first bridge wires 224, wherein the first bridge wires 224 will be adjacent to each other. A sensing pad 222 is connected in series. The second sensing electrode 230 and the first sensing electrode 220 are disposed on the substrate 210 and are independent of each other. Each of the second sensing electrodes 230 includes a plurality of second sensing pads 232 and a plurality of second bridge wires 234 , wherein the second bridge wires 234 serially connect the two adjacent second sensing pads 232 . In this embodiment, the first sensing electrodes 220 respectively extend along the first direction D1 and are arranged along the second direction D2, and each of the second sensing electrodes 230 extends, for example, along the second direction D2, and along the first direction. The D1 is arranged, wherein the first direction D1 is, for example, perpendicular to the second direction D2, but is not limited thereto. In this embodiment, the second touch electrodes 230 and the first touch electrodes 220 are, for example, staggered with each other. In another embodiment (not shown), the second touch electrode and the first touch electrode may also be non-interlaced, wherein the first touch electrode and the second touch electrode may be single layer electrodes (one layer) Solution, OLS).

In the present embodiment, the substrate 210 is used, for example, as a cover. That is, the first sensing electrode 220 and the second sensing electrode 230 are disposed on the substrate 210, for example. On the same surface S1, the first sensing electrode 220 and the second sensing pad 232 of the second sensing electrode 230 are located in the same layer. In addition, the touch panel 200 of the present embodiment further includes an insulation pattern 242 disposed between the first bridge line 224 of the first sensing electrode 220 and the second bridge line 234 of the second sensing electrode 230 to make the first The sensing electrode 220 is electrically insulated from the second sensing electrode 230. The cover may comprise a glass cover, a sapphire substrate, a plastic cover or other hard and highly mechanically strong material to form a cover that protects, covers or beautifies its corresponding device, such as a physically or chemically strengthened glass. The cover plate may be a planar shape or a curved shape, or a combination of the foregoing, such as 2.5D glass, but is not limited thereto. At least one side of the cover may be provided with a decorative layer to shield the metal traces or to shield the pins for guiding the FPC.

The first sensing pad 222 has a conductive pattern. The conductive pattern includes a crystalline layer and a metal layer, wherein the metal layer is disposed on the crystalline layer. In the present embodiment, the conductive pattern is, for example, the aforementioned mesh conductive pattern. In other words, the conductive pattern includes, for example, a plurality of meshes, each of which is a regular polygon or an irregular polygon, but the present invention is not limited thereto. In an embodiment, the conductive pattern may also be a conductive pattern having other shapes by the above-described manufacturing method, such as a conductive pattern having a shape of a strip, a diamond, a circle, or the like.

In this embodiment, the first bridge wire 224 of each of the first sensing electrodes 220 and the first sensing pad 222 are integrally formed, for example. Furthermore, in the present embodiment, the second sensing pad 232 has, for example, the aforementioned mesh conductive pattern. In other words, in the embodiment, the first bridge wire 224, the first sensing pad 222, and the second sensing pad 232 are simultaneously fabricated by the method for manufacturing the mesh conductive pattern. Forming a plurality of first bridge lines 224, a plurality of first sensing pads 222, and a plurality of second sensing pads 232 as shown in FIG. 6 from a layer of conductive material through a laser annealing process and a selective etching process Reticulated crystalline layer. Then, a mesh metal layer is formed on the mesh layer by electroplating or electroless plating, so that the first bridge 224, the first sensing pad 222 and the second sensing pad 232 composed of the mesh conductive pattern are completed.

Then, an insulation pattern 242 is formed on the first bridge wire 224, and a second bridge wire 234 is formed on the insulation pattern 242. The second bridge wire 234 can be fabricated in a manner that is generally used for wire fabrication, such as deposition or printing. In addition, the peripheral trace 250 connected to the first sensing electrode 220 or the second sensing electrode 230 may also adopt the aforementioned mesh conductive pattern. For example, in the embodiment, the peripheral line 250 connected to the first sensing electrode 220 can be fabricated together with the first bridge line 224 and the first sensing pad 222. The peripheral line 250 connected to the second sensing electrode 230 can be fabricated with the second sensing pad 232. In particular, although the first bridge wire 224 and the peripheral wire 250 connected to the first sensing electrode 220 are strip conductors as an example in FIG. 6, they may be mesh wires. In addition, the first sensing electrode 220 and the second sensing electrode 230 of the embodiment may also be separated by a whole surface insulating layer (not shown), or only the entire insulating layer. The opening is made at a joint corresponding to the bridge wire and the sensing pad, so that the bridge wire can electrically connect the adjacent two sensing pads.

The first bridge wire 224, the first sensor pad 222, and the second sensor pad 232 are, for example, the aforementioned mesh conductive patterns, and the structure and material thereof can be referred to the previous embodiment. The material of the second bridge wire 234 is, for example, a metal material, such as selected from copper, Silver, aluminum, chromium, titanium, molybdenum, etc. or a single layer structure or a stacked structure of the above materials, or an alloy of at least two of the above materials. The present invention is not intended to limit the number of layers and materials of the stack, as long as it has good electrical conductivity, and is within the scope of the present invention.

FIG. 8 is a cross-sectional view of a touch panel in accordance with an embodiment of the invention. Referring to FIG. 8 , in the embodiment, the touch panel 300 includes a substrate 210 , a plurality of first sensing electrodes 220 , a plurality of second sensing electrodes 230 , a first insulating film F1 , and a first adhesive layer AD1 . The second sensing electrode 230 is located on the first insulating film F1, and the first sensing electrode 220 is located between the first insulating film F1 and the substrate 210. In this embodiment, the substrate 210 can be used as a cover, that is, the surface S2 is a touch surface.

Further, the first sensing electrode 220 can be formed on the surface S1 of the substrate 210, and the second sensing electrode 230 is formed on the first insulating film F1, and the first insulating film F1 is bonded through the first adhesive layer AD1, for example. The first sensing electrode 220 and the substrate 210. The first bridge wire 224 and the first sensor pad 222 are simultaneously fabricated on the substrate 210 by the method for fabricating the mesh conductive pattern, so that the first bridge wire 224 of each first sensing electrode 220 and the first sense The pad 222 is, for example, integrally formed. Therefore, the first bridge 224 and the first sensing pad 222 of the first sensing electrode 220 are composed of, for example, the aforementioned mesh conductive pattern. Similarly, the second bridge 234 and the second sensing pad 232 are simultaneously formed on the first insulating film F1 by the method for fabricating the mesh conductive pattern, and thus the second bridge 234 of each second sensing electrode 230 The second sensing pad 232 is integrally formed, for example. Therefore, the second bridge 234 and the second sensing pad 232 of the second sensing electrode 230 are, for example, the aforementioned mesh conductive pattern. Composition. In another embodiment, the first sensing electrode 220 and the second sensing electrode 230 may be respectively formed on opposite surfaces of the first insulating film F1, and the first sensing electrode 220 and the first insulating film F1 is bonded to the substrate 210 through the first adhesive layer AD1. In this embodiment, the first sensing pad 222 and the first bridge wire 224 are both formed by the mesh conductive pattern described above, for example. Of course, it should be noted that the conductive pattern is not limited to those shown in FIG. 6, and may be other patterns such as strips.

FIG. 9 is a cross-sectional view of a touch panel in accordance with an embodiment of the invention. Referring to FIG. 9 , the touch panel 400 of the present embodiment has a similar structure to the touch panel 300 of FIG. 8 , wherein the same film layers are denoted by the same reference numerals, and the materials and configurations thereof are not described herein. The main difference from the touch panel 300 is that the touch panel 400 of the present embodiment further includes a second insulating film F2, wherein the second insulating film F2 is located between the first insulating film F1 and the substrate 210, and the first sensing electrode 220 It is located on the second insulating film F2. Further, the second insulating film F2 is bonded to the substrate 210 through the second adhesive layer AD2, for example. It should be noted that although the above-mentioned electrodes disposed on the insulating film are exemplified on one side of the insulating film, the present invention is not limited thereto, and the electrode system may be disposed on either side of the insulating film.

It is worth mentioning that the above-mentioned touch panel 200, 300 or other unillustrated touch panel can be used with the display panel to form an out-cell and an in-line type (including in-line type (in- Cell) and external (on-cell) touch display panels. FIG. 10 is a cross-sectional view of a touch display panel according to an embodiment of the invention. Referring to FIG. 10 , the touch display panel 1 of the present embodiment is, for example, an external touch display panel, which includes a display panel DP and a touch panel TP. The panel DP includes an active device array substrate 10, a counter substrate (ie, substrate 210), and a display medium layer 20 between the active device array substrate 10 and the opposite substrate.

In the embodiment, the display panel DP and the touch panel TP share the substrate 210. When the display panel DP is a liquid crystal panel, the substrate 210 is used as, for example, a color filter substrate. Further, the surface S1 of the substrate 210 of the embodiment is used to carry the touch element (including the first sensing electrode 220, the second sensing electrode 230, the cover CG, and the adhesive layer AD), and the surface S2 carries the display. Some components of the panel DP (such as the color filter CF, the common electrode CE, and an alignment layer not shown). Further, the surface S3 of the cover CG is a touch surface. In addition, when the display panel DP is an organic light emitting diode panel, the substrate 210 may also serve as a package cover of the organic light emitting diode, and the package cover may also be a color filter substrate. For example, when the substrate 210 shown in FIG. 8 is a color filter substrate including a light shielding pattern, at least a portion of the first sensing electrodes 220 may be formed on a light shielding pattern (not shown) of the substrate 210.

In the above embodiment, since the mesh conductive pattern 100 has characteristics of fine line width, good overall transmittance, and good conductivity, the mesh conductive pattern 100 is used as an electrode or a wire in a touch panel or a touch display panel. The touch panel or the touch display panel has good touch quality and visual effects. In addition, when the line adopts the mesh conductive pattern 100, since the impedance of the mesh crystal layer 120 and the mesh metal layer 130 are different, a capacitance may exist between the two, and the capacitor may serve as a buffer for electrostatic discharge. The mesh metal layer 130 is vented to discharge electrostatic discharge. Furthermore, since the method of fabricating the mesh conductive pattern can avoid the breakage of the mesh pattern of the thin line width, and can be easily combined with the process of the existing touch panel, it can be greatly improved. Touch panel yield and reduced production costs.

In summary, the present invention firstly obtains a network layer having a desired line width through a laser process and an etching process, and then forms a network metal on the network layer as an electrode by electroplating or electroless plating. The layer thus forms a mesh-like conductive pattern having a double-layered conductor material. Therefore, the present invention does not require patterning of the photoresist by a yellow light process, and can eliminate the etching process for the metal material. In this way, it is possible to overcome the problem of poor resolution of the yellow light process, and the problem that disconnection, etching rate, and etching uniformity which may exist when etching a metal material are difficult to control, and the etchant is dangerous. Therefore, the method for fabricating the mesh conductive pattern according to an embodiment of the present invention has a simple step, a better yield, and improved safety, and can form a mesh having a fine line width, good penetration, and good conductivity. Conductive pattern. In this way, when the mesh conductive pattern is applied as a touch component to the touch panel, the touch panel as a whole has good touch quality and display quality. In addition, the process of the mesh conductive pattern of the present invention can be easily combined with the processes of existing touch panels and touch panels, without causing a substantial increase in cost, but can greatly improve the yield of the devices.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

102‧‧‧Substrate

110‧‧‧layer of conductor material

110a‧‧‧Amorphous part

110p‧‧‧crystal part

LAP‧‧‧Laser Annealing Process

Claims (30)

A method for fabricating a mesh-shaped conductive pattern, comprising: forming a conductive material layer on a substrate; performing a laser annealing process on the conductive material layer such that the conductive material layer has a crystalline portion and an amorphous portion, wherein The crystalline portion is in the form of a mesh; the selective etching process is performed on the conductive material layer to remove the amorphous portion, so that the crystalline portion forms a reticulated crystalline layer; and the reticulated crystalline layer is subjected to an electroplating or electroless plating process So that a network of metal layers is formed on the network layer. The method for fabricating a mesh conductive pattern according to claim 1, wherein the conductive material layer comprises a transparent conductive oxide. The method for fabricating a mesh-shaped conductive pattern according to claim 1, wherein the conductive material layer comprises indium tin oxide, aluminum zinc oxide or gallium zinc oxide. The method for fabricating a mesh conductive pattern according to claim 1, wherein the selective etching process comprises using an oxalic acid solution. The method for fabricating a mesh conductive pattern according to claim 1, wherein the metal material used in the electroplating or electroless plating process comprises copper (Cu), aluminum (Al), molybdenum (Mo) or silver (Ag). . The method for fabricating a mesh conductive pattern according to claim 1, further comprising performing an electroplating or electroless plating process on the mesh metal layer to form another mesh metal layer on the mesh metal layer. The method for fabricating a mesh conductive pattern according to claim 1, further comprising performing a preheating process on the conductive material layer before performing the laser annealing process, wherein a temperature of the preheating process is lower than the The crystallization temperature of the layer of the conductor material. A touch panel includes: a substrate; and a plurality of sensing electrodes disposed on the substrate, wherein at least one of the sensing electrodes has a conductive pattern, the conductive pattern includes: a crystalline layer; and a metal layer disposed on On the crystalline layer. The touch panel of claim 8, wherein the crystal layer has a crystal size of 5 nm to 18 nm. The touch panel of claim 8, wherein the side wall profile of the crystal layer is wavy, and the side wall profile of the metal layer is wavy. The touch panel of claim 8, wherein the metal layer is further located on a sidewall of the crystal layer. The touch panel of claim 8, wherein a thickness ratio of the metal layer to the crystal layer is greater than 10. The touch panel of claim 8, wherein the crystal layer has a thickness of 10 nm to 200 nm. The touch panel of claim 8, wherein the metal layer has a thickness of 100 nm to 1 um. The touch panel of claim 8, wherein the crystal layer The line width is less than 2um. The touch panel of claim 8, wherein the material of the crystal layer comprises a transparent conductive oxide material. The touch panel of claim 8, wherein the material of the crystal layer comprises indium tin oxide, aluminum zinc oxide or gallium zinc oxide. The touch panel of claim 8, wherein the material of the metal layer comprises copper (Cu), aluminum (Al), molybdenum (Mo) or silver (Ag). The touch panel of claim 8, wherein the conductive pattern comprises a plurality of grids, each of the grids being a regular polygon or an irregular polygon. The touch panel of claim 8, wherein the metal layer comprises a plurality of metal layers stacked on each other. The touch panel of claim 8, wherein the sensing electrodes comprise a plurality of first sensing electrodes and a plurality of second sensing electrodes, the first sensing electrodes and the second senses The electrodes are independent of each other. The touch panel of claim 21, wherein the second touch electrodes and the first touch electrodes are staggered with each other. The touch panel of claim 22, wherein each of the first sensing electrodes comprises a plurality of first sensing pads and a plurality of first bridge wires, the first bridge wires connecting two adjacent ones A sensing pad is connected in series, each of the second sensing electrodes includes a plurality of second sensing pads and a plurality of second bridge wires, the second bridge wires connecting the two adjacent second sensing pads in series. The touch panel of claim 23, wherein each of the first The first bridge wires of the sensing electrodes are integrally formed with the first sensing pads. The touch panel of claim 23, wherein the second bridge wires of each of the second sensing electrodes are integrally formed with the second sensing pads. The touch panel of claim 21, further comprising a cover, and at least one of the first sensing electrodes and the second sensing electrodes is located between the substrate and the cover . The touch panel of claim 21, further comprising a first insulating film, the second sensing electrodes are located on the first insulating film, and the first sensing electrodes are located at the first insulating layer Between the film and the substrate. The touch panel of claim 27, further comprising a second insulating film between the first sensing electrodes and the substrate. The touch panel of claim 21, wherein the first sensing electrodes and the second sensing electrodes are respectively located on opposite surfaces of the substrate. The touch panel of claim 21, further comprising a light shielding pattern disposed on the substrate, wherein at least one of the first sensing electrodes and the second sensing electrodes are located in the light shielding pattern on.