TW201540405A - Edge chamfering methods - Google Patents

Abstract

Processes of chamfering and/or beveling an edge of a glass substrate of arbitrary shape using lasers are described herein. Two general methods to produce chamfers on glass substrates are the first method involves cutting the edge with the desired chamfer shape utilizing an ultra-short pulse laser to create perforations within the glass; followed by an ion exchange.

Description

Edge chamfering method [related application]

The present application claims the benefit of priority to U.S. Provisional Application Serial No. 61/931, 881, filed on Jan. 27, 2014, the content of which is hereby incorporated by reference. This application also claims the benefit of U.S. Provisional Application No. 62/022,885, filed on July 10, 2014, and the benefit of U.S. Patent Application Serial No. 14/530,410, filed on The entire disclosure is incorporated herein by reference.

The present disclosure relates generally to glass deangulation methods, and more particularly to glass deangulation methods utilizing laser-bound ion exchange processes.

It is not admitted that any of the references cited herein constitute prior art. Applicants expressly reserve the right to challenge the accuracy and suitability of any cited documents.

In all situations where glass panels are cut for use in architecture, automotive, consumer electronics applications (listing several areas), there will be edges that are likely to require attention. There are many different methods for cutting and separating glass. For example, glass can use electromagnetic radiation (laser, discharge, magnetic coil, etc.) Mechanically (CNC machining, abrasive water jetting, scribing and cracking, etc.) cutting. More conventional and common methods (scouring and rupturing or CNC machining) produce edges that are filled with defects of different types and sizes. It is also often found that the edges are not completely perpendicular to the surface. In order to eliminate defects and give the edges a relatively flat surface with improved strength, the edges are typically ground. The grinding process involves abrasive removal of the edge material, which imparts the desired finishing of the edge material, and also shapes its outer shape (outer fillet shape, chamfer shape, pen shape, etc.). To allow for the grinding and polishing steps, it is necessary to cut a portion that is larger than the final desired size.

Although it is well known and understood that eliminating defects will increase edge strength, it is shaped There is no agreement on the effect of the shape on the edge strength. The trouble is mainly due to the well-known shape that helps to increase the impact on the edges and the resistance to disposal. The fact is that the edge shape does not actually determine the edge strength, as defined by the resistance to flexing (or bending) forces, but the size and distribution of the defects do have a large effect. However, the forming edge does help to improve the impact resistance by creating a smaller cross section and accommodating defects. For example, an edge having a straight face perpendicular to the two major surfaces of the glass accumulates stress at such right angle corners and will break and rupture upon impact by another object. Due to the cumulative stress, the size of the defect can be quite large, which will significantly reduce the strength of the edge. On the other hand, due to the smoother shape of the circular "outer fillet" forming edge, it will have a lower cumulative stress and a smaller cross section, thereby helping to reduce the size of defects and reduce defects in the edge volume. through. Therefore, after impact, the formed edge should have a higher "bending" strength than the flat edge.

For the reasons discussed above, it is often necessary to shape the edges to be flat It is straight and perpendicular to the opposite surface. Such mechanical cutting and edge forming methods An important aspect of this is the maintenance of the machine. For both cutting and grinding, old and worn cutting heads or grinding rolls can cause damage that can significantly affect the strength of the edges, even if the difference is not visible to the naked eye. Other problems with mechanical cutting and grinding methods are that they are extremely labor intensive and require many grinding and polishing steps up to the final finish, which produces a large amount of debris and requires a cleaning step to avoid introduction of damage to the surface. .

Ablation by laser treatment has been used to create shaped edges.

In general, ablation laser technology tends to be slow due to low material removal rates, and such techniques also produce large amounts of debris and heat affected zones that cause residual stresses and microcracks. For the same reason, the melting and reshaping of the edges is also subject to a large amount of deformation and the risk of detaching the cumulative thermal stress of the treated area. Finally, one of the main problems encountered with thermal stripping or crack propagation techniques is that the stripping is discontinuous.

For the edge strength of glass or other brittle materials, under-surface damage or small micro-cracks and material modification caused by any cutting process are of concern. Mechanical and ablation laser processes are particularly problematic in terms of subsurface damage. Edges that are cut with such processes typically require extensive post-cut grinding and polishing to remove the sub-surface fracture layer, thereby increasing the edge strength to the level of performance required for applications such as consumer electronics.

Embodiments described herein relate to a process for using a laser-bound ion exchange bath to chamfer and/or bevel the edges of a glass substrate of any shape.

One embodiment of the present disclosure is directed to a method for generating a chamfer or bevel, the method comprising: Observing the pulsed laser beam as a laser beam focal line as viewed in the direction of beam propagation; directing the laser beam focal line into the material at a first angle of incidence of the material, the laser beam being focally within the material Inducing absorption that is absorbed within the material to create a defect line along the focal line of the laser beam; translating the material and the laser beam relative to one another, thereby traversing the material at a first angle along the first plane The plurality of defect lines are drilled; the laser beam is directed to the material at a second angle of incidence of the material, the laser beam causing an induced absorption in the material, the induction being absorbed in the material Generating a defect line along the focal line of the laser beam; translating the material and the laser beam relative to each other, thereby drilling a plurality of defect lines in the material at a second angle along a second plane, the second The plane intersects the first plane and the material is separated along the first plane and the second plane by applying an ion exchange process to the material for 10 min to 120 min.

According to some embodiments, the separating material is a glass sheet having at least one chamfered surface, chamfered edge or beveled corner.

According to some embodiments, at least one of the first angle of incidence and the second angle of incidence is not a normal angle (not an angle of 90°) relative to a major surface of the material. For example, if the material is a glass sheet having two major flat surfaces (and a thickness that is much smaller than the width and length of the sheet), then the first angle and/or the second angle are greater than the normal to the major flat surface of the glass sheet. 0° and less than 90°.

According to some embodiments, the ion exchange process is applied to the material time t during the separation of the material along the first plane and the second plane, wherein 15 min t 120min. In some embodiments, 15 min t 60 min, and in some embodiments, 15 min t 50min or even 15min t 40min. According to some embodiments, the ion exchange process is applied to the material at a temperature of from 400 °C to 500 °C.

According to some embodiments, the method further comprises: passing the material through Subject to a second ion exchange process to strengthen the material and improve the resistance of the material to subsequent damage.

One embodiment of the present disclosure is directed to a method for producing a chamfered or beveled workpiece, the method comprising: focusing a pulsed laser beam into a laser beam focal line as viewed in a beam propagation direction; A focal line is directed into the workpiece at an angle of incidence of the workpiece, the angle intersecting an edge of the workpiece, the laser beam causing an induced absorption within the workpiece, the inducing absorption within the workpiece along the laser a defect line of the beam focal line; translating the workpiece and the laser beam relative to each other, thereby drilling a plurality of defect lines at a laser beam at the angle at a plane; and applying an ion exchange process to the workpiece The workpiece is separated along the plane.

According to some embodiments, the method further comprises subjecting the material to a second ion exchange process to strengthen the material and to improve the resistance of the material to subsequent damage.

According to some embodiments, a method of making a chamfered and tempered glass article comprises: (i) providing a glass article having a selected profile and a glass surface, and a perforated edge and/or corner; (ii) removing the portion of the glass adjacent to the edge of the perforation and/or the corner by subjecting the article to a first ion exchange process (eg, 20 min to 60 min) to complete a whole body cut between the perforations; (ii) Cleaning the glass article, (iv) air drying the cleaned glass article; and subsequently (v) subjecting the glass article to a second ion exchange process to strengthen the glass article and improve the resistance of the glass article to subsequent damage.

According to some embodiments, the first ion exchange process is a DIOX process (two-stage IOX switching process). According to some embodiments, the second ion exchange process is a DIOX process. According to some embodiments, the first ion exchange process and the second ion exchange process are both DIOX processes.

Other features and advantages will be set forth in the description which follows, and in the <RTIgt; These features and advantages are recognized by the embodiments described in the drawings.

It is to be understood that the foregoing general description and the following detailed description of the claims

The accompanying drawings are included to provide a further understanding The drawings illustrate one or more embodiments and, together with the

1‧‧‧Flat substrate/substrate

1a‧‧‧Surface/plane

1b‧‧‧reverse surface/plane/surface

2‧‧‧pulse laser beam/laser beam

2a‧‧‧beam incident side/laser radiation/beam bundle

2aZ‧‧‧ center beam

2aR‧‧‧ marginal ray

2b‧‧‧Laser beam focal line/expanded laser beam focal line/focal line/line

2c‧‧‧Extended section/section/part/induced absorption

3‧‧‧Laser

5‧‧‧ dividing line

6‧‧‧Optical assembly/laser optics

7‧‧‧Spherical cut lenticular lens/lens/non-aberration correction spherical lens

8‧‧‧Circular aperture/aperture

9‧‧‧Rotating three

10‧‧‧Rotary triode/component

11‧‧‧ Plano-convex lens/lens/component/focusing element/focusing lens

12‧‧‧ Collimating Lens / Convex Lens / Lens

500‧‧‧ Single burst/burst/burst

500A‧‧‧Individual pulse/laser pulse/pulse/individual laser pulse

br‧‧‧Width/ring width

d‧‧‧Substrate thickness / substrate depth

D‧‧‧Average range

Dr‧‧‧ ring diameter

F‧‧•focal length

F'‧‧‧focal length/distance

L‧‧‧ Length

L‧‧‧ length

δ‧‧‧Average diameter

Λ‧‧‧wavelength

Z1‧‧‧distance

Z2‧‧‧ distance

Z1a‧‧‧distance

Z1b‧‧‧distance

SR‧‧‧Circular transition / circular radiation

T _b ‧‧‧ time interval/time

T _d ‧‧‧ duration

T _p ‧‧‧Duration/pulse interval/pulse to pulse segmentation

The patent or application file contains at least one schema implemented in color. A copy of the patent or patent application publication with a color drawing will be provided by the official upon request and payment of the necessary fee.

The foregoing description will be more apparent from the following detailed description of the exemplary embodiments of the present invention, which are illustrated in the accompanying drawings, wherein the same reference numerals refer to the same parts throughout the different views. The drawings are not necessarily to scale, the emphasis

Figures 1A through 1C are diagrams of the dotted lines of the modified glass having equally spaced defect lines.

2A and FIG. 2B is a section illustrating the positioning of the focal line of the laser beam, i.e., along the focal line due to the induction of the absorption wavelength laser processing of a transparent material.

3A illustrates a first view of an optical assembly of a laser drilling.

3B1 to 3B4 of view of the laser beam by the substrate relative to the focal line is positioned to handle various illustrate different possibilities of the substrate.

4 illustrates a second view of the optical assembly of the laser drilling.

Of FIG. 5A and 5B illustrate a third of the optical assembly of the laser drilling.

FIG 6 is a schematic view of a fourth optical laser drilling assembly.

FIG. 7A of the present application is described to form a more robust edge - and the sacrificial flowchart chamfered edges of the various methods of production.

FIG 7B illustrates a first embodiment of the process has a defect generating line of the chamfered edge.

FIG. 7C illustrates a first embodiment of defective lines generated using the focusing and angulation of ultrashort laser of laser chamfered edges of the glass along a predetermined plane. The top shows an example of using three defect line planes compared to only two defect line planes of the bottom image.

Figures 8A and 8B depict laser emissions over time as a picosecond laser. Each emitter is characterized by a pulse "burst" that can contain one or more sub-pulses. The time corresponding to: pulse duration, interval between pulses, and the interval between bursts is exemplified.

Figure 9 illustrates the use of cutting means after the defective line by releasing the reserved area to act as a sacrificial, the arrest of crack extension by the attack edge of the member caused.

FIG 10A is placed first in the illustrated ion exchange member having a cutting line of an internal defect, which increases the ion exchange to remove enough stress in the perforation edges and form the desired chamfered edge.

FIG 10B is a second ion-exchange (the IOX) to release the chamfered corners, which is illustrated similar to that shown in FIG. 10A of the first, but having only two defective line plane.

10C illustrates a first view of having a plurality of angles (angle 3 than to the plane of the defective line.

Figure 11 illustrates a process for using IOX along a line defect (defective line) to remove glass to produce a result of several embodiments of the chamfered.

FIG. 12A illustrates by edge chamfering process resulting chamfered, the edge chamfering process using laser defective lines (perforations) in the glass, and subsequently perforated glass subjected 15min long IOX bath for peeling and separating, This produces a chamfered edge.

12B to FIG illustrated by edges chamfered processes generated chamfered, the edge chamfering process using laser defective lines (perforations) in the glass, and subsequently perforated glass subjected 60min long IOX bath for peeling and separating, This produces a chamfered edge. 12C of FIG illustrated by edges chamfered processes generated chamfered, the edge chamfering process using laser defective lines (perforations) in the glass, and subsequently perforated glass subjected 30min long IOX bath for peeling and separating, This produces a chamfered edge.

The description of the exemplary embodiments is as follows.

The embodiments described herein relate to a process for using a laser to chamfer and/or bevel the edges of any shape of glass substrate and other transparent materials. The first embodiment involves cutting the edge having the desired de-angular shape using ultrashort pulsed lasers, which may optionally be followed by other process steps for fully automated separation. In the first method, the process basic step produces a meander line on the intersecting plane that shapes the desired edge shape and establishes a minimum resistance path for crack propagation and thus separation and detachment of the shape from its substrate substrate. This method essentially produces a shaped edge while cutting the portion out of the main substrate. The laser separation method can be tuned and configured to enable the shaped edges to be manually separated, partially separated, or self-separated from the original substrate. The basic principles for generating such a squall line are described in detail below and in U.S. Patent Application Serial No. 61/752,489, filed on Jan. 15, 2013.

In a first step, the object to be processed is illuminated with an ultrashort pulsed laser beam that is concentrated into a high aspect ratio line focus that penetrates the thickness of the substrate. Within this high energy density capacity, the material is modified via a non-linear effect. It is important to note that in the absence of this high optical intensity, nonlinear absorption is not triggered. Below this intensity threshold, the material is transparent to the laser radiation and remains in its original state as shown in Figures 1A through 1C . By scanning the laser through the desired line or path, a narrow defect line (a few microns wide) is created and defines the perimeter or shape to be separated in the next step. The particular laser method used (described below) has the advantage that in a single pass, the method produces a controlled full line of perforations through the material, while under-surface damage and debris generation is minimal (<75 μm, often <50 μm, and in some embodiments 40 μm). This is in contrast to the typical use of spotted lasers for ablation materials, where multiple passes are often required to completely perforate the glass thickness, a large amount of debris is formed from the ablation process, and a wider subsurface damage occurs. (>100μm) and edge fragmentation.

Turning to Figures 2A and 2B , the method of laser drilling a material includes focusing the pulsed laser beam 2 into a laser beam focal line 2b as viewed in the direction of beam propagation. As shown in Fig . 3A , a laser 3 (not shown) emits a laser beam 2 incident on the beam incident side (referred to as 2a) of the optical assembly 6, which is incident on the optical assembly 6. The optical assembly 6 converts the incident laser beam into a flared laser beam 2b within the defined expansion range along the beam direction (length l of the focal line) on the output side. The planar substrate 1 to be processed is positioned in the beam path behind the optical assembly to at least partially overlap the laser beam focal line 2b of the laser beam 2. Reference symbol 1a designates the surface of the planar substrate facing the optical assembly 6 or the laser, respectively, and reference numeral 1b designates the generally parallel spaced reverse surface of the substrate 1. The substrate thickness (perpendicular to planes 1a and 1b, i.e., perpendicular to the plane of the substrate) is marked with d.

As depicted in FIG. 2A , the substrate 1 is vertically aligned with the longitudinal beam axis and thus behind the same focal line 2b produced by the optical assembly 6 (the substrate is perpendicular to the plane of the drawing) and viewed in the beam direction, The positioning is made with respect to the focal line 2b in such a manner that the focal line 2b viewed in the beam direction starts before the surface 1a of the substrate and stops before the surface 1b of the substrate, that is, remains in the substrate. In the overlapping area of the laser beam focal line 2b and the substrate 1, that is, in the substrate material covered by the focal line 2b, the laser beam focal length 2b is expanded as viewed in the longitudinal beam direction. In the case of a suitable beam intensity of the beam focal line 2b, the intensity is ensured by focusing the laser beam 2 on a section of length l, i.e., focusing on the line focus of length l) the extension section 2c, induced An absorber is produced in the substrate material along the longitudinal beam direction to induce defect line or crack formation along the segment 2c in the substrate material. The formation of the defect line is not only local but also over the entire length of the extension section 2c which induces absorption. The length of the segment 2c (i.e., the length at which the laser beam focal line 2b overlaps the substrate 1 after all) is marked with the reference symbol L. The average diameter or average range of the section that induces absorption (or the section of the material of the substrate 1 that undergoes the formation of the defect line) is labeled with the reference symbol D. This average range D substantially corresponds to the average diameter δ of the laser beam focal line 2b, that is, the average spot diameter in the range between about 0.1 μm and about 5 μm.

As shown in Fig . 2A , the substrate material transparent to the wavelength λ of the laser beam 2 is heated due to induced absorption along the focal line 2b. Figure 2B summarizes that the heated substrate material will eventually expand so that the corresponding induced tension causes microcrack formation, where the tension is highest at surface 1a.

The following describes specific optical assemblies 6 that can be applied to produce focal line 2b, as well as specific optical settings in which such optical assemblies can be applied. All of the assemblies or settings are based on the above description, such that the same reference symbols are used for the same components or features or their functional equivalents. Therefore, only the differences are described below.

Because the resulting split face is ultimately of high quality or must have high quality (in terms of fracture strength, geometric accuracy, roughness and avoidance of remachining requirements), individual segments to be positioned along the dividing line 5 on the substrate surface Focal line It should preferably be produced using an optical assembly as described below (hereinafter, the optical assembly is also alternatively referred to as a laser optical element). Roughness is particularly due to the spot size or spot diameter of the focal line. To achieve a small spot size of, for example, 0.5 μm to 2 μm under the given wavelength λ of the laser 3 (interacting with the material of the substrate 1), certain requirements are imposed on the numerical aperture of the laser optical element 6. These requirements are met by the laser optics 6 described below.

In order to achieve the desired numerical aperture, on the one hand, the optical element should preferably be based on the known Abbe formula (NA = n sin (θ), n: the refractive index of the glass to be treated; θ: one and a half of the aperture angle; and θ = Arctan (D/2f); D: aperture, f: focal length), to position the desired opening for a given focal length. On the other hand, the laser beam should preferably illuminate the optical element until the desired aperture is achieved, typically by beam broadening between the laser and the focusing optics using a widening telescope. Achieved.

The spot size should not change too strongly for the purpose of uniform interaction along the focal line. This can be ensured, for example, by the following (see the following example): the focusing optics are illuminated only in small circular areas so that the beam opening and thus the numerical aperture percentage is only slightly changed.

According to FIG. 3A (a section perpendicular to the plane of the substrate at the level of the central beam in the laser beam bundle of the laser radiation 2; also here, the center of the laser beam 2 is incident substantially perpendicularly to the substrate plane, That is, incident at an angle of about 0° so that the focal line 2b or the extension section 2c for inducing absorption is parallel to the substrate normal), and the laser radiation 2a emitted by the laser 3 is first guided to the circular aperture 8, which The circular aperture 8 is completely opaque to the laser radiation used. The aperture 8 is oriented perpendicular to the longitudinal beam axis and is centered on the central beam of the depicted beam bundle 2a. The diameter of the aperture 8 is chosen in such a way that the beam bundle or central beam (here marked with 2aZ) near the center of the beam bundle 2a strikes the aperture and is completely absorbed by it. Only the beam in the peripheral range outside the beam bundle 2a (the marginal ray, here marked with 2aR) is not absorbed, due to the reduced aperture compared to the beam diameter, which passes laterally The aperture 8 and the marginal region of the focusing optics of the impact optics assembly 6, where the optical assembly 6 is designed as a spherically-cut lenticular lens 7.

The lens 7 centered on the central beam is deliberately designed as an uncorrected biconvex focusing lens in the form of a generally spherically cut lens. In other words, spherical aberration of such a lens is intentionally used. As an alternative, a non-spherical or multi-lens system that deviates from the ideal correction system (i.e., a lens or system that does not have a single focus) can be used that does not form an ideal focus but forms a distinct, narrow focal line having a defined length. The zone of the lens is thus focused along the focal line 2b, which is affected by the distance from the center of the lens. The diameter of the aperture 8 across the beam direction is approximately 90% of the diameter of the beam bundle (by the extent of the beam bundle diameter defined by 1/e) and is approximately the diameter of the lens of the optical assembly 6. 75%. Therefore, the focal line 2b of the non-aberration correction spherical lens 7 generated by blocking the beam bundle at the center is used. Figure 3A shows a section in one plane passing through the center beam, and a complete three-dimensional bundle is visible as the depicted beam is rotated about the focal line 2b.

One disadvantage of such a focal line is that the conditions (spot size, laser intensity) can vary along the focal line and thus along the desired depth in the material, and therefore the desired type of interaction (no melting, induced absorption, thermoplastic deformation until cracking) Formed) may only be selected in one of the focal lines. This in turn means that only a portion of the incident laser light may be absorbed in the desired manner. In this way, in one aspect, The efficiency of the process (the required average laser power at which the velocity is to be separated) can be compromised, and on the other hand, the laser light can also be transmitted to an undesired deeper position (adhered to a portion or layer of the substrate or substrate holding fixture). And interacting in an undesirable manner (heating, diffusion, absorption, undesired modification).

Figures 3B-1 to 3B-4 show (not only for the optical assembly in Figure 3A , but also for virtually any other applicable optical assembly 6): the laser beam 2b can be borrowed The positioning of the optical assembly 6 relative to the substrate 1 is suitably positioned and/or aligned and by suitably selecting the parameters of the optical assembly 6: as outlined in Figure 3B-1 , the length of the focal line 2b is It can be adjusted in such a way that it exceeds the substrate thickness d (here more than 2 times). If the substrate 1 is placed centrally on the focal line 2b (as viewed in the longitudinal beam direction), the extension section 2c which induces absorption is generated over the entire thickness of the substrate.

In the situation shown in Fig . 3B-2 , a focal line 2b having a length l is produced, which more or less corresponds to the substrate range d. Since the substrate 1 is positioned relative to the wire 2 in such a way that the wire 2b starts at a point before (ie, outside) the substrate, the length L of the extended section 2c that induces absorption is induced (here it extends from the substrate surface to the limit) The depth of the substrate, without extending to the reverse surface 1b) is less than the length l of the focal line 2b. Figure 3B-3 shows a situation in which the substrate 1 (as viewed in the beam direction) is partially positioned before the starting point of the focal line 2b, so that here too, the length of the line 2b is suitable l > L (L) = range of the section 2c in the substrate 1 that induces absorption). Therefore, the focal line starts within the substrate and extends beyond the reverse surface 1b to the outside of the substrate. Figure 3B-4 finally shows the situation where the length of the focal length l produced is smaller than the thickness d of the substrate so that - in the case where the substrate is positioned with respect to the center of the focal line in the incident direction - the focal line approaches the surface 1a in the substrate It starts and ends near the surface 1b in the substrate (for example, l = 0.75.d).

It is particularly advantageous to achieve focal line positioning in such a way that at least one surface 1a, 1b is covered by a focal line, that is to say that the section 2c which induces absorption starts on at least one surface. In this way, it is possible to achieve a virtually ideal drilling or cutting to avoid erosion, feathering and micronization at the surface.

Figure 4 depicts another applicable optical assembly 6. The basic configuration follows the configuration described in Fig. 3A , so only the differences will be described below. The depicted optical assembly is based on the use of optical elements having a non-spherical free surface to create a focal line 2b that is shaped to form a focal line having a defined length l. For this purpose, aspherical bodies can be used as optical components of the optical assembly 6. In Fig. 4, for example, a so-called tapered crucible is used, which is also often referred to as a rotating triad. Rotating three turns is a special conical cut-off lens that forms a spot source (or converts a laser beam into a loop) on a line along the optical axis. The layout of such a rotating triad is generally known to those skilled in the art; the cone angle in the example is 10°. The apex of the rotating triad, which is here marked with reference numeral 9, is directed towards the incident direction and is centered at the center of the beam. Since the focal line 2b of the rotating triplet 9 has begun within its interior, the substrate 1 (here aligned perpendicular to the main beam axis) can be positioned in the beam path directly behind the rotation of the 稜鏡9. As shown in Fig . 4 , it is also possible to shift the substrate 1 in the beam direction due to the optical characteristics of the rotation of the three turns without leaving the range of the focal line 2b. The extended section 2c of induced absorption in the material of the substrate 1 thus extends over the entire substrate depth d.

However, the depicted layout suffers from the following limitations: since the focal line 2b of the rotating triple 9 has begun within the lens, the effective portion of the laser energy is not focused on the focal line 2b under the limited distance between the lens and the material. Located in part 2c inside the material. In addition, in terms of the refractive index and the taper angle of the rotating triplet 9, the length l of the focal line 2b is related to the beam diameter, which is too long in the case of a relatively thin material (several millimeters). The reason for this excessively long focal line is that the laser energy is again unspecifically (or not entirely) focused on the material.

This is why it is necessary to include the enhanced optical assembly 6 of both the rotating triplet and the focusing lens. Figure 5A depicts such an optical assembly 6 in which a first optical element (as viewed in the beam direction) having a non-spherical free surface designed to form a stretched laser beam focal line 2b is positioned at the beam of the laser 3 In the path. In the situation shown in Fig . 5A , the first optical element is a rotating triplet 10 having a cone angle of 5[deg.] which is positioned perpendicular to the beam direction and centered on the laser beam 3. The vertices of the rotating three turns are oriented toward the beam direction. Here, the second focusing optical element of the plano-convex lens 11 (having a curvature oriented toward the rotation of the three turns) is positioned in the beam direction at a distance z1 from the rotation of the three turns 10. The distance z1 of approximately 300 mm in this case is selected in such a manner that the laser radiation formed by rotating the triple 10 is circularly incident on the marginal region of the lens 11. The lens 11 focuses the circular radiation on a focal line 2b having a defined length (1.5 mm in this case) on the output side at a distance z2 (in this case approximately 20 mm from the lens 11). Here, the effective focal length of the lens 11 is 25 mm. The laser beam is marked with a reference symbol SR by a circular transformation of the rotation of the three turns 10.

Fig. 5B depicts in detail the formation of the focal line 2b or the induced absorption 2c in the material of the substrate 1 according to Fig. 5A . The optical characteristics of the two elements 10, 11 and their positioning are selected in such a way that the range 1 of the focal line 2b in the beam direction is exactly equal to the thickness d of the substrate 1. Therefore, the exact positioning of the substrate 1 in the beam direction is required in order to position the focal line 2b just between the two surfaces 1a and 1b of the substrate 1, as shown in Fig. 5B .

It is therefore advantageous to have the focal line formed at a certain distance from the laser optics and the larger portion of the laser radiation to focus on the desired end of the focal line. As mentioned, this can be achieved by illuminating only the desired area of the primary focusing element 11 (lens) circularly, on the one hand to achieve the desired numerical aperture and thus the desired spot size, but on the other hand, After the desired focal line 2b is formed at a very short distance from the center of the spot (e.g., substantially circular spot), the strength of the diffusing ring is reduced. In this way, the defect line formation stops within a short distance of the desired substrate depth. The combination of the rotating triplet 10 and the focusing lens 11 meets this requirement. Rotating the three turns acts in two different ways: due to the rotation of the three turns 10, the generally circular laser spot is sent to the focusing lens 11 in the form of a ring, and the aspherical surface of the three turns 10 is rotated Sex has the effect of forming a focal line beyond the focal plane of the lens instead of forming a focus in the focal plane. The length l of the focal line 2b can be adjusted via the beam diameter on the rotating three turns. On the other hand, the numerical aperture along the focal line can be adjusted by rotating the three-lens-lens via the distance z1 and by rotating the cone angle of the three turns. In this way, the entire laser energy can be concentrated in the focal line.

If it is envisaged that the defect line formation continues to the exit side of the substrate, the circular illumination still has the following advantages: on the one hand, the use of the thunder in the most likely way as follows Shooting power: Most of the laser light remains concentrated in the desired length of the focal line. On the other hand, it is possible to achieve a uniform spot size along the focal line - and thus a uniform separation process along the focal line - due to the circular illumination area The belt is accompanied by the desired aberration set by means of other optical functions.

Instead of the plano-convex lens depicted in Figure 5A , it is also possible to use a focused meniscus lens or another higher correction focus lens (aspheric, multi-lens system).

To produce a very short focal line 2b using a combination of rotating triplets and lenses as depicted in Figure 5A , a laser beam of a very small beam diameter incident on the rotating triplet is preferably selected. It has the practical disadvantage that the centering of the beam at the apex of the rotating triad should be extremely accurate, and therefore the resultant is extremely sensitive to changes in the direction of the laser (beam drift stability). In addition, the closely collimated laser beam is extremely divergent, that is, the beam bundle becomes blurred over a short distance due to light deflection.

Returning to Fig. 6 , the two effects can be avoided by inserting another lens, i.e., the collimating lens 12, which is used to closely adjust the circular illumination of the focusing lens 11. The focal length f' of the collimating lens 12 is selected in such a way that the desired annular diameter dr is produced by rotating the three turns to the distance z1a of the collimating lens 12, which distance z1a is equal to f'. The desired width br of the ring can be adjusted via the distance z1b (collimator lens 12 to focus lens 11). As a matter of pure geometry, the small width of the circular illumination results in a short focal line. A minimum can be reached at distance f'.

Thus, the optical assembly 6 depicted in Figure 6 is based on the optical assembly depicted in Figure 5A , so only the differences are described below. The collimating lens 12, also designed here as a plano-convex lens with its curvature facing the beam direction, is additionally placed on the rotating triad 10 on one side (the apex thereof is facing the beam direction) and the flat on the other side At the center of the beam path between the convex lenses 11. The distance between the collimator lens 12 and the rotating triplet 10 is referred to as z1a, the distance between the focusing lens 11 and the collimating lens 12 is referred to as z1b, and the distance between the generated focal line 2b and the focusing lens 11 is referred to as z2 (always in the beam) Direction observation). As shown in Fig. 1, the circular radiation SR formed by rotating the turns 10 is adjusted along the distance z1b to the desired ring width br to at least substantially constant annular diameter dr at the focusing lens 11, the circle The radiation SR is divergent and incident on the collimating lens 12 at a ring diameter dr. In the situation shown, it is envisaged to produce a very short focal line 2b such that a ring width br of approximately 4 mm at the lens 12 is reduced to approximately 0.5 mm at the lens 11 due to the focusing properties of the lens 12 (circle in this example) The ring diameter dr is 22 mm).

In the depicted example, it is possible to achieve a length of focal line 1 of less than 0.5 mm using a typical laser beam diameter of 2 mm, a focusing lens 11 having a focal length f = 25 mm, and a collimating lens having a focal length f ' = 150 mm. Further, application Z1a = Z1b = 140 mm and Z2 = 15 mm.

Once a line with defects (also referred to herein as a defect line or perforation) is created, the separation can occur via the following: Process 1) Manual or mechanical stress on or around the defect line; stress or pressure should produce tension that will be the point of the line The sides are pulled apart and the areas that are still stuck together are broken; or 2) the stresses generated during the ion exchange process, in the glass at or near the defect line, and inducing partial or total self-separation. In both cases, the separation depends on several process parameters such as laser scanning speed, laser power, lens parameters, pulse width, repetition rate, and the like.

The second method utilizes existing edges to create a chamfer by applying stress through an ion exchange process (IOX). In at least some of the glasses, this group of two methods In other cases, better control of the chamfered edge shape and surface texture is produced by using Method 1 alone.

The ion exchange process (IOX) promotes the release of the glass at or around the decile line, which produces a chamfered edge or an incompletely chamfered edge. In addition, the use of a picosecond laser process on a non-dehorned edge or an incompletely chamfered edge is described below, but is not used for a chamfered edge having a "sacrificial" region that controls damage caused by edge impact. This IOX process is similar to the IOX process for glass reinforcement.

Figure 7A shows an overview of the process described in this application.

In methods that use short pulses, burst lasers to form the desired shape and edges, the developed process relies on material transparency to the laser wavelength in a linear region, or allows for clean and high (or original) surface quality to be maintained. The low laser intensity, as well as the reduced subsurface damage caused by the high intensity regions surrounding the laser focus. One of the important parameters of this process is the high aspect ratio of defects produced by ultrashort pulsed lasers. It allows for the creation of long and deep defects or defect lines (or perforations) that extend from the top surface of the material to be cut and chamfered to the bottom surface. In principle, each defect can be generated by a single pulse, and other pulses can be used to increase the range (depth and width) of the affected area, or a single burst of pulses can be used.

There are several ways to generate the defect line. The optical method of forming the line focus can take many forms, using a ring-shaped laser beam and a spherical lens, a rotating three-lens lens, a diffractive element, or other method of forming a linear region of high intensity. Can also change the type of laser (picosecond, femtosecond, etc.) and wavelength (IR, green, UV, etc.), as long as sufficient optical intensity is achieved to produce a breakdown of the substrate material.

In an embodiment of the invention, an ultrashort burst laser is used to produce this high aspect ratio vertical defect line (perforation or hole) in a consistent, controllable, and repeatable manner. The above description details the optical settings that allow the creation of this vertical defect line. This embodiment utilizes a rotating three-lens lens element in an optical lens assembly to produce an area having a high aspect ratio taper-free microchannel using an ultrashort (picosecond or femtosecond duration) bezel beam. . In other words, rotating the three beams concentrates the laser beam into an area having a cylindrical shape and a high aspect ratio (long length and small diameter). Due to the high intensity generated by the concentrated laser beam, a nonlinear interaction of the laser electromagnetic field with the material occurs and the laser energy is transferred to the substrate. However, it is important to achieve that in areas where the intensity of the laser energy is not high (eg, the glass surface, the glass volume surrounding the central convergence line), the glass does not change because the laser intensity is below a non-linear threshold.

As exemplified in Figures 1A through 1C , the method for cutting and separating the glass substrate is basically based on the use of an ultrashort pulsed laser to create a defect line on the material to be processed. The particular selected process parameters will depend on the material properties (absorption, CTE, stress, composition, etc.) and the laser parameters selected for processing.

In some cases, the resulting defect line is not sufficient to cause it to be automatically separated, and an auxiliary step may be necessary. If so desired, in the case of non-chemically strengthened glass, separation can be achieved after the generation of the defect line, by the application of mechanical force or by the use of an ion exchange (IOX) process to promote self-separation of the components. Partial or full component separation can be achieved by selecting the appropriate residence time of the part in a 1OX bath.

Using the same principle of separating the glass substrates having flat edges as illustrated in Figures 1A through 1C , the process of fabricating the chamfered edges can be modified as illustrated in Figure 7B . To separate the glass to form a chamfered edge, for example, in one embodiment, we create three separation planes with defect lines that intersect and define the boundaries of the shape of the chamfered or beveled edges. Different shapes may be created by using, for example, only two intersecting defect line planes as illustrated in Figure 7C , but the flat portions of the edges must be broken/separated without any defective lines. It should be possible to separate the corners at the defect line plane using a suitable combination of defect line features and treatment with an IOX bath. For example, the line may be defective with respect to the normal to the flat surface of the glass substrate □ _i to be formed, in some embodiments, the angle _{0 ° <□ i <90 °} . For example, the chamfered edge on the bottom of Figure 7B is fabricated by three intersecting planes, each of which contains a plurality of defect lines.

Laser and optical systems:

For example, for the purpose of cutting glass or other transparent brittle materials, a process has been developed that uses (eg, 1064 nm, or 532 nm, or 266 nm) picosecond lasers in combination with line focus beam forming optical elements to create damage in the substrate. Line (ie, defect line). Sample Corning® Gorilla® Glass 2320 with a thickness of 0.7 mm is positioned so that it is within the line focus. With a line focus of the range of about 1 mm and a picosecond laser that produces an output power of about >30 W at a repetition rate of 200 kHz (about 150 μJ/pulse), the optical intensity in the line region can be easily high enough, In order to produce nonlinear absorption in the material. The resulting regions of damaged, ablated, vaporized, or otherwise modified materials generally follow a linear region of high intensity.

Note that the typical operation of this picosecond laser produces an "burst" of pulses (see, for example, Figures 8A and 8B ). Each "burst" may contain multiple sub-pulses (ie, individual pulses) of a very short duration (eg, about 10 psec). Each individual pulse is separated in time by, for example, approximately 20 nsec (50 MHz), where time is often determined by the laser cavity design. For a laser repetition rate of about 200 kHz, the time between each "burst" will be longer, often about 5 μsec. The exact time, pulse duration, and repetition rate can vary depending on the laser design. However, high intensity short pulses (<15 psec) have proven to be well suited for this technique.

For example, teach that each burst of pulses can contain two pulses (also referred to herein as sub-pulses) or more than two pulses (such as 3 pulses, 4 pulses, 5 pulses, 10 pulses, 15 in an explosion). Pulses, 20 pulses or more than 20 pulses), the pulses being separated from one another by a duration in the range between about 1 nsec and about 50 nsec, such as a duration of 10 nsec to 50 nsec (eg, about 20 nsec or 30 ns), And the burst repetition frequency (i.e., the interval between the first pulses in two consecutive bursts) can be in the range between about 1 kHz and about 200 kHz. The pulsed laser beam can have a wavelength that is selected such that the material is substantially transparent at this wavelength. In the context of the present disclosure, when at this wavelength, the absorption per mm of material depth is less than about 50% (eg, <40%), more preferably less than 10%, and even more preferably less than about 1%, the material is directed to the laser. The wavelength is substantially transparent. This wavelength can be, for example, 1064 nm, 532 nm, 355 nm or 266 nm. The average laser power measured at the material may be greater than 40 microjoules per mm thickness of the material, such as between 40 microjoules/mm and 1000 microjoules/mm, such as 100 to 900 μJ/mm, or between 100 Between microjoules/mm and 650 microjoules/mm, preferably from 200 to 400 μJ/mm.

For example, as illustrated in Figures 8A and 8B , in accordance with embodiments described herein, the picosecond laser produces an "outbreak" 500 of pulses 500A, which is sometimes referred to as an "burst." Each "outbreak" may contain 500 has a very short duration multiple pulses 500A T _d of the duration T _d up 100psec (eg, 0.1psec, 5psec, 10psec, 15psec , 18ps, 20ps, 22ps, 25ps, 30ps, 50ps, 75ps or between them). These individual pulses 500A within a single burst 500 may also be referred to as "sub-pulses," which simply indicate that the bursts occur within a single burst of pulses. The energy or intensity of each of the laser pulses 500A within the burst may not be equal to the energy or intensity of other pulses within the burst, and the intensity distribution of the plurality of pulses within the burst 500 often follows an exponential decay of the time determined by the laser design. Preferably, within each pulse 500A outbreak embodiment 500 of the exemplary embodiment described herein by 1nsec and 50nsec (e.g. 10 to 50ns, or the duration T _p 10 to 30nsec of the outbreak of the temporally subsequent pulse segment, which is often determined by the time the laser resonant cavity design for a given laser, the outbreak of the time segments T _p (pulse to pulse segments) between each pulse 500 is relatively uniform within the (± 10%). for example, in some embodiments, each pulse in time with a subsequent pulse segment substantially 20nsec (50MHz). for example, to produce about 20nsec pulse laser T _p of the segment concerned, the burst of pulses to the pulses T _p is maintained within the segments ± 10% or about (i.e., the time between outbreaks segment T _b) is a time of between about ± 2nsec. each "outbreak" will be much longer ( For example, 0.25 microseconds T _b 1000 microseconds, such as 1 to 10 microseconds, or 3 to 8 microseconds). For example, in some exemplary embodiments of the lasers described herein, it is about 5 microseconds for a laser repetition rate or frequency of about 200 kHz. The laser repetition rate is also referred to herein as the burst repetition frequency and is defined as the time between the first pulse in the burst and the first pulse in the latter burst. In other embodiments, the burst repetition frequency is in a range between about 1 kHz and about 4 MHz. More preferably, the laser repetition rate can be, for example, in the range between about 10 kHz and 650 kHz. The time T _b between the first pulse in each burst and the first pulse in the next burst may be 0.25 microseconds (4 MHz repetition rate) to 1000 microseconds (1 kHz repetition rate), such as 0.5 microseconds (2 MHz repetition) Rate) to 40 microseconds (25 kHz repetition rate), or 2 microseconds (500 kHz repetition rate) to 20 microseconds (50 kHz repetition rate). The exact timing, pulse duration and repetition rate can vary depending on the laser design, but high intensity short pulses (T _d <20psec and preferably T _d 15 psec) has proven to be particularly well suited.

The energy required to modify the material can be in terms of the energy contained in the burst energy-burst (each burst 500 contains a series of pulses of 500A), or the energy contained in a single laser pulse (many single laser pulses) It can be described in terms of an outbreak. For such applications, the energy per burst can range from 25 to 750 μJ, more preferably from 50 to 500 μJ, from 50 to 250 μJ. In some embodiments, the energy per burst is between 100 and 250 [mu]J. The energy of individual pulses within the burst can be small, and the exact individual laser pulse energy will depend on the number of pulses 500A within burst 500 and the rate of decay of the laser pulse over time (eg, exponential decay rate), as in 8A and Figure 8B shows. For example, for a constant energy/burst, if the burst pulse contains 10 individual laser pulses 500A, each individual laser pulse 500A will contain less energy than if the same burst pulse 500 had only 2 individual laser pulses. .

The use of a laser capable of producing such bursts facilitates the cutting or upgrading of transparent materials such as glass. And at the time of using the repetition rate of the laser In contrast to a single pulse spaced apart, the use of a fast sequence of sub-pulses (which constitute an burst 500) to propagate the laser energy burst sequence allows for higher material than would be possible with a single pulsed laser A large time scale of intensity interaction. Although a single pulse can be extended in time, since this is done, the intensity within the pulse must be roughly reduced to the intensity over the pulse width. Therefore, if a 10 psec single pulse is extended to a 10 nsec pulse, the intensity is roughly reduced by three orders of magnitude. This reduction reduces the optical intensity of the point where nonlinear absorption is no longer important, and the optical material interaction is no longer strong enough to allow cutting. In contrast, with burst pulse lasers, the intensity during the pulse of each sub-pulse 500A (or pulse 500A within burst 500) can be kept extremely high - for example, three 10 psec pulses 500A separated by approximately 10 nsec in time intervals are still allowed The intensity within each pulse is approximately three times higher than the intensity of a single 10 psec pulse, allowing the laser to interact with the material on a time scale that is now three orders of magnitude larger. Thus, such adjustment of the plurality of pulses 500A within the burst allows the time scale of the laser-material interaction to be manipulated in such a way that it can contribute to a greater pre-existing plasma plume. Or smaller light interactions, larger or smaller light-material interactions with atoms and molecules that have been pre-excited by initial or previous laser pulses, and greater controlled growth within the material that promotes microcracking Or smaller heating effect. The amount of explosive energy modifying material required will depend on the substrate material composition and the length of the line focus used to interact with the substrate. The longer the interaction area, the more energy is emitted and the higher the burst energy that will be needed.

Hole or break track formation: If the substrate or transparent material has sufficient stress (eg, using ion exchanged glass), the part will spontaneously crack and separate along the perforation break path traced by the laser process. However, a large intrinsic stress (e.g., conditions such as Corning Eagle XG ^® composition) If the substrate is not present, only the picosecond laser damage tracks formed (i.e., defect or perforation line) in the test piece. Such disruptive tracks typically take the form of holes having an internal dimension of about 0.5 to 1.5 [mu]m, or 0.2 to 2 [mu]m (e.g., in some embodiments, 0.2 to 0.7 microns, or 0.3 to 0.6 microns). ). Preferably, the size of the holes is extremely small (several microns or less).

The holes or defect lines may perfor the entire thickness of the material and may or may not be a continuous opening through the depth of the material. Figure 1C shows an example of such a track perforating the entire thickness of a 700 μm thick unreinforced Gorilla® glass substrate. Perforation or damage tracks are observed through the sides of the split edges. Tracks through the material are not necessarily through-holes - glass often has areas that block holes, but such areas are typically small in size.

When the substrate is translated below the focused laser beam, the lateral spacing (pitch) between the holes is determined by the pulse rate of the laser. Forming a single hole requires only a single picosecond laser burst, but multiple pulses can be used as needed. To form holes at different pitches, the lasers can be triggered to emit at longer or shorter intervals. For the cutting operation, the laser trigger is usually synchronized with the step drive motion of the components below the beam, so the laser pulses are triggered at regular intervals, such as, for example, every 1 μm or every 5 μm. In the case of a stress level in a given substrate, the exact spacing is determined by the nature of the material that contributes to the propagation of cracks from the perforations to the perforations. However, with the cutting substrate pair It is also possible to use the same method to perforate only the material. In this case, the holes are separated, for example, at a pitch of 5 μm.

The laser power and lens focal length (which determines the length of the defect line and hence the power density) are particularly critical parameters to ensure complete penetration of the glass and low microcracks.

In general, the higher the laser power available, the faster the material can be cut using the above process. The process disclosed herein can cut glass at a cutting speed of 0.25 m/sec or faster. The cut speed (or cutting speed) is the rate at which the laser beam moves relative to the surface of the transparent material (eg, glass) while creating multiple holes or modified regions). In order to minimize capital investment in manufacturing and optimize equipment utilization, high cutting speeds are often required, such as, for example, 250 mm/sec, 400 mm/sec, 500 mm/sec, 750 mm/sec, 1 m/sec, 1.2 m/sec, 1.5. m/sec, or 2 m/sec, or even 3.4 m/sec to 4 m/sec. The laser power is equal to the burst energy multiplied by the burst repetition rate (rate) of the laser. In general, to cut such a glass material at a high cutting speed, the breaking track is typically spaced apart by 1 to 25 microns, and in some embodiments, the spacing is preferably 3 microns or greater - such as 3 to 12 microns. Or for example 5 to 10 microns.

For example, to achieve a linear cutting speed of 300 mm/sec, a 3 micron hole spacing corresponds to a pulsed burst laser with an burst repetition rate of at least 100 kHz. For a cutting speed of 600 mm/sec, the 3 micron pitch corresponds to an explosive pulsed laser with an burst repetition rate of at least 200 kHz. Need to generate at least 40μJ/burst burst laser at 200kHz and at 600mm/s cutting speed Cut to obtain a laser power of at least 8 watts. Therefore, higher cutting speeds require equally high laser power.

For example, a 0.4 m/sec cutting speed at 3 [mu]m pitch and 40 [mu]J/burst would require at least 5 watts of laser, and a 0.5 m/sec cutting speed at 3 [mu]m pitch and 40 [mu]J/burst would require at least 6 watts of laser. Therefore, preferably, the laser power of the pulse burst ps laser is 6 watts or more, more preferably at least 8 watts or more, and even more preferably at least 10 W or more. For example, to achieve a 0.4 m/sec cutting speed at 4 μm pitch (interval between break line breaks or broken tracks) and 100 μJ/burst, at least 10 watts of laser will be required, and at 4 μm pitch and 100 μJ/burst Achieving a cutting speed of 0.5 m/sec will require at least 12 watts of laser. For example, to achieve a cutting speed of 1 m/sec at 3 [mu]m pitch and 40 [mu]J/burst, at least 13 watts of laser would be required. In addition, for example, a 1 m/sec cutting speed at 4 [mu]m pitch and 400 [mu]J/burst would require at least 100 watts of laser. Destruction of the optimal spacing between the tracks and the exact burst energy is lazy and can be determined empirically. However, it should be noted that increasing the laser pulse energy or making the track at a closer spacing does not always result in better separation of the substrate material or improved edge quality. The spacing between the broken tracks is too dense (eg, <0.1 micron, or <1 [mu]m in some exemplary embodiments, or <2 [mu]m in some embodiments) can sometimes inhibit the formation of subsequent broken tracks in the vicinity, and can often Separation of the material surrounding the perforation profile is inhibited and may also result in an increase in unwanted microcracks within the glass. Too long a pitch (>50μm, and >25μm or even >20μm in some glasses) can lead to "uncontrolled microcracks" - that is, where the propagation of holes to holes is replaced, microcracks propagate along different paths, and Cracking of the glass is caused by different (unwanted) directions. This can ultimately reduce the strength of the split glass component as residual microcracks will act as a barrier to weakening the glass. The burst energy used to form each of the broken tracks is too high (eg, >2500 μJ/burst, and in some embodiments >500 μJ/burst) can cause "healing" or re-formation of microcracks that have broken adjacent tracks. Fusion, which will inhibit the separation of the glass. Therefore, it is preferred that the burst energy < 2500 μJ/burst, for example 500μJ/burst. In addition, the use of excessive burst energy can cause the formation of extremely large microcracks and produce a reduction in the edge strength of the component after separation. Excessive energy (<40μJ/burst) can result in unobtrusive damage to the formation of the track within the glass, and thus results in extremely high separation strength or no separation at all along the perforation profile.

A typical exemplary cutting rate (speed) achieved by this process is, for example, 0.25 m/sec and higher. In some embodiments, the cutting rate is at least 300 mm/sec. In some embodiments described herein, the cutting rate is at least 400 mm/sec, such as from 500 mm/sec to 2000 mm/sec, or higher. In some embodiments, a picosecond (ps) laser utilizes a pulse burst to create a defect line with a periodicity between 0.5 microns and 13 microns, such as between 0.5 microns and 3 microns. In some embodiments, the pulsed laser has a laser power of 10 W to 100 W, and the material and/or the laser beam are at a rate of at least 0.25 m/sec relative to each other, such as from 0.25 m/sec to 0.35 m/sec or Translation at a rate of 0.4 m/sec to 5 m/sec. Preferably, each pulse burst of the pulsed laser beam has an average laser energy of greater than 40 microjoules per mm of the workpiece at each of the bursts measured at the workpiece. Preferably, each pulse burst of the pulsed laser beam has an average laser energy per mm of workpiece thickness greater than 2500 microjoules per measurement at the workpiece, and preferably less than about 2000 micrometers per mm per burst. Joule, and in one In each of the embodiments, the thickness of each workpiece per mm is less than 1500 microjoules; for example, the thickness of each workpiece per mm is less than 500 microjoules per burst.

It has been found that perforated alkaline earth metal boroaluminosilicate glass containing low alkali metal or alkali metal free glass requires a higher (5 to 10 times higher) volumetric pulse energy than glass such as Corning Gorilla®. Density (μj/μm ³ ). This can be achieved, for example, by using a pulsed burst laser, preferably with at least 2 pulses per burst, and providing about an alkaline earth metal boroaluminosilicate glass (having a low amount of alkali metal or alkali-free metal). A volumetric energy density of 0.05 μJ/μm ³ or higher, for example at least 0.1 μJ/μm ³ , for example 0.1 to 0.5 μJ/μm ³ .

Therefore, it is preferred that the laser utilizes at least 2 pulses per burst to generate a pulse burst. For example, in some embodiments, the pulsed laser has a laser power of 10 W to 150 W (eg, 10 to 100 W) and is generated using at least 2 pulses per burst (eg, 2 to 25 pulses per burst) Pulse burst. In some embodiments, the pulsed laser has a power of 25 W to 60 W and generates a pulse burst with at least 2 to 25 pulses per burst, and the periodicity or distance between adjacent defect lines produced by the laser burst It is 2 to 10 microns. In some embodiments, the pulsed laser has a laser power of 10 W to 100 W, with at least 2 pulses per burst to generate a pulse burst, and the workpiece and the laser beam are translated at a rate of at least 0.25 m/sec relative to each other. In some embodiments, the workpiece and/or the laser beam translate at a rate of at least 0.4 m/sec relative to each other.

For example, for cutting a 0.7 mm thick non-ion exchange Corning 2319 or 2320 Gorilla glass, it is observed that a distance between 3 and 7 microns can be a good fit, with a pulse burst energy of about 150 to 250 μJ/burst, and an explosion The number of pulses varies in the range of 2 to 15, and preferably, the pitch is 3 to 5 μm, and the number of burst pulses (the number of pulses per burst) is 2 to 5.

At 1m / sec cutting speed, cutting thick Eagle XG ^® glass typically requires use of a laser power of 15-84 watts, 30-45 watts is usually sufficient. In general, among various glass and other transparent materials, Applicants have found that a laser power of between 10 W and 100 W is preferred for achieving a cutting speed of 0.2 to 1 m/sec, for many glasses, 25 The laser power to 60 watts is sufficient (and optimal). For cutting speeds from 0.4m/sec to 5m/sec, the laser power should be preferably 10W to 150W, and the burst energy is 40 to 750μJ/burst, with 2 to 25 bursts per pulse (depending on the material being cut) And a hole distance (or pitch) of 3 to 15 μm or 3 to 10 μm. For these cutting speeds, it is preferred to use a picosecond pulsed burst laser because it produces high power and the required number of pulses per burst. Thus, in accordance with some exemplary embodiments, the pulsed laser produces a power of 10 W to 100 W, such as 25 W to 60 watts, and produces a burst of at least 2 to 25 pulses per burst, and the distance between the defect lines is 2 to 15 microns; and the laser beam and/or workpiece are translated relative to each other at a rate of at least 0.25 m/sec, in some embodiments at least 0.4 m/sec, such as 0.5 m/sec to 5 m/sec or faster.

Cutting and separating the chamfered edges: Dehorning method 1:

Different conditions have been found to allow separation of the chamfered edges in the case of unreinforced Gorilla® glass, especially Corning 2320. The first method is to use only a picosecond laser to create a defect line and form a dotted line that follows the desired shape (in this case, a chamfered edge). After this step, mechanical separation can be used Rupture tongs, manually bending a component or any method that produces tension along the crepe line and propagates the separation. To produce a chamfered edge with defect lines in a 700 μm thick unreinforced (pre-ion exchange) Gorilla® glass and mechanically separate the parts, the best results were found for the following optical components and laser parameters: picosecond laser ( 1064nm)

The input beam to the rotating three-turn lens is about 2mm in diameter.

Rotating three angles = 10 degrees

Initial collimating lens focal length = 125mm

Final objective lens focal length = 40mm

The focus is set at z=0.7mm (ie, the center of the line focus setting is the thickness of the glass)

Laser power at 100% full power (approximately 40 watts)

Laser pulse repetition rate = 200 kHz.

Spacing = 5μm

3 pulses / burst

Single defect per defect line

Sacrificial edge: The presence of residual defect lines in the glass can be beneficial to retard crack propagation when the edge is impacted. In this case, the defect line plane can be used to act as a break-resisting position, in effect producing a "sacrificial" edge portion of the glass that is outside the area of the defect line. In fact, the generation of sacrificial edges can be a method of producing increased component reliability without any physical deangulation features on the outer edges of the components, and without any mechanical grinding and polishing to produce the features of the features, such sacrificial edges simply There is an additional defect line that reaches one of the interior of the separation edge, or a set of defect lines that intersect to form a more complex internal bevel inside the true edge. Some of the choices for this type of sacrificial edge are shown in Figure 9 . Because the picosecond laser process described above produces each defect line at a single pass and at a speed of up to 1 m/s, such additional "destructive stop" lines are extremely easy and cost effective to produce. It should be noted that other laser systems can also be utilized to create defect lines by forming a laser beam focal line. For example, a picosecond laser operation operating at 532 nm can also be utilized.

Dehorning method 2:

An exemplary formation of defect lines: to create a chamfered edge with defect lines in 700 μm thick unreinforced Gorilla® glass and to separate the parts, according to one embodiment, we utilized the following optical components and laser parameters: picosecond laser (1064nm)

The input beam to the rotating three-turn lens is about 2mm in diameter.

Rotating three angles = 10 degrees

Initial collimating lens focal length = 125mm

Final objective lens focal length = 40mm

The focus is set at z=0.7mm (ie, the center of the line focus setting is the thickness of the glass)

Laser power at 100% full power (approximately 40 watts)

Laser pulse repetition rate = 200 kHz.

Spacing = 5μm

3 pulses / burst

Single defect per defect line

The separation of the outer glass edge blocks formed by the defect lines need not be performed by mechanical force. Since the glass before ion exchange is usually cut and subsequently sent to subsequent chemical strengthening (ion exchange), we have found that ion exchange itself can generate enough stress to cause small chamfered areas or corner blocks to bounce off parts. The introduction of new ions into the glass surface can create sufficient stress between the perforations or defect lines to cause the outer corner blocks to bounce, or the high temperature salt bath can generate sufficient thermal stress to induce such small pieces to fall. In either case, the end result is a better follow-up of the existing defect line and thus the edge of the desired de-angular shape. Without being bound by theory, Applicants believe that ions entering the glass via the glass surface will create regions of high stress concentration near the surface and especially near the corners of the glass portion. For example, a very high level of tensile stress will be created near the corners of any of the components to establish the conditions under which the drive glass will separate along any of the pre-perforated zones (zones with defective lines) in such corners. See Figures 10A through 10C . Rather words, FIG. 10A is placed on the ion exchange has a defective line illustrated cutting member of the interior, the ion exchange increases stress sufficient to remove the perforated edges and form the desired chamfered edge. FIG 10B illustrates the use of ion exchange (the IOX) to release the chamfered corners, which is illustrated similar to that shown in FIG. 10A of the first, but having only two defective line plane. FIG 10C is a diagrammatic section having a plurality of chamfered angle (more than 3 defective line plane) of. It should be noted that other laser systems can also be utilized to create defect lines by forming a laser beam focal line. For example, a picosecond laser operation operating at 532 nm can also be utilized.

The picosecond material (eg, glass) perforation portion method has been combined with the IOX exchange to produce a controlled separation guided by the defect line plane. More specifically, the ion exchange (IOX) process is a process in which bismuth silicate glass is immersed in a molten alkali metal salt such as potassium nitrate at a temperature lower than the glass transition temperature. In dip During the absence, alkali metal ions from the glass close enough to the surface are exchanged with the alkali metal ions from the molten salt. This process can be applied to transparent materials such as thin glass (for example, < 2 mm), or curved glass, and the resulting glass has strong edges and is of extremely high quality. The perforation edge is released by a stress profile generated by ion exchange - that is, the glass is separated along the defect line to create a chamfer. Typical processing temperatures suitable for use in IOX baths are >300 °C, such as 400 °C, or 450 °C, or 500 °C, or 550 °C, or somewhere in between. According to some embodiments, the treatment time for the ion exchange bath to produce a good quality fully chamfered edge is > 20 min, such as 30 to 60 min. For partial chamfering, the processing time can be, for example, 10 to 20 minutes or 30 minutes. The ion exchange process for dehorning or for corner generation is similar or identical to the ion exchange process for glass strengthening, but when used for glass removal along the perforations (ie, along the defect line for use in When the chamfer is made, the perforated glass member can be subjected to an ion exchange bath for a shorter period of time (e.g., less than 1 hour, or such as 10 min to 40 min) than for the IOX glass reinforcement. While not wishing to be bound by theory, applicants believe that the mechanism of IOX chamfering is the separation of materials along the defect line by having compressive stress (CS) and/or central tension (CT) (also known as pull). The creation of a region of the tensile stress) is caused by the presence of the material. Prior to the IOX bath, the sample was heated to prevent thermal shock that could rupture the glass component and minimize bath heat load (i.e., cooling) effects. The preheating temperature depends on the temperature of the salt bath. The IOX bath produces sufficient stress to cause the outer corner block or perforated area to bounce along the defect line or near the defect line.

Figure 11 illustrates the amount of time by varying the process IOX along line defects (defective line) is removed to produce a plurality of glass to the angle of the experiment (Example) results. The horizontal axis of Figure 11 depicts the ion exchange bath immersion time, the vertical axis depicts the central tension (CT) as a function of ion exchange bath immersion time, and the percentage of glass release (glass separation). More specifically, the right side of the figure depicts the level of compressive stress (CS) in megapascals, and the left side depicts the compressive stress layer depth (DOL) obtained from the IOX bath used for the dehorning. As indicated in Figure 11 , for at least some embodiments, the CS after about 10 min of IOX bath exposure is about 900 to 1000 MPa. It should be noted that in these exemplary embodiments, when the center tension (CT) of the glass member is about 20 MPa, that is, at or near the CS peak, the complete release of the glass along the defect line (complete glass separation) occurs. This occurs after about 10 to 20 minutes of IOX bath exposure. At the same time, the tensile stress can be significantly higher in the corners of the glass object. For example, the finite element model indicates that the tensile stress in these corner regions can be above 200 MPa (eg, 250 MPa), which promotes corner separation.

FIG 12A illustrates a first embodiment of the defective line by the use of the chamfered edge routing 15min and then long stripping bath IOX generated chamfered. First, the picosecond laser is focused at an angle and a defect line is created on an angular plane. Subsequently, the perforated glass sample was immersed in an IOX bath and a piece of glass was separated along the defect line to form at least a partial chamfer. More specifically, according to some embodiments, a 0.7 mm thick unreinforced Gorilla® glass (143 mm x 75 mm) having internal defect lines (perforations) produced by a picosecond laser as described above is preheated to 420 ° C, and It was then placed in an ion exchange bath at 420 ° C for 15 min. It was then removed, rinsed in deionized water (D1), air dried and evaluated. We noticed that about 50% of the perforated edges were removed. That is, partial dehorning was successfully achieved by subjecting the glass sample to an IOX bath for 15 min. Some edges are completely removed and some are partially removed (partially dehorned). As mentioned above, some exemplary embodiments of the chamfer produced by this process are shown, for example, in Figure 12A .

FIG 12B illustrates a first embodiment of the defective line by the use of the chamfered edge routing 60min and then long stripping bath IOX generated chamfered. First, the picosecond laser is focused at an angle and a defect line is created on an angular plane. Subsequently, the perforated sample is immersed in the IOX bath and at least one glass is separated along the defect line to form a chamfer. More specifically, according to some embodiments, the cut glass with internal defect lines (0.7 mm thick unreinforced Gorilla® glass, 143 mm x 75 mm) is preheated to 420 ° C and placed in an ion exchange bath at 420 ° C for 60 min, It was subsequently removed, rinsed in deionized water (DI), air dried and evaluated. We observed that the complete (100%) removal of the perforated portion (the glass collapsed along the defect line) and the excellent edge quality of the resulting chamfered edge.

FIG 12C illustrates a first embodiment of the defective line by the use of the chamfered edge routing 30min and then long stripping bath IOX generated chamfered. First, the picosecond laser is focused at an angle and a defect line is created on an angular plane. Subsequently, the perforated sample is immersed in the IOX bath and at least one glass is separated along the defect line to form a chamfer. More precisely, according to other embodiments, the cut glass with internal defect lines (0.7 mm thick unreinforced Gorilla® glass, 143 mm x 75 mm) is preheated to 420 ° C and then placed in an ion exchange bath at 420 ° C. 30min. The perforated edges were separated and the glass with the chamfered edges was subsequently removed, deionized water (DI), air dried and evaluated. During the evaluation, we observed a complete removal of the perforated portion (100%) and excellent edge quality at the chamfered edge. Some exemplary embodiments of the chamfer produced by this process are shown, for example, in Figure 12C .

Preferably, in accordance with some embodiments, a method of making a chamfered and tempered glass article comprises: (i) providing a glass article having a selected profile and a glass surface, and perforation (defect line) edges and/or corners; (ii) removing the portion of the glass adjacent to the edge of the perforation and/or the corner by subjecting the article to a first ion exchange process (eg, 20 min to 60 min) to complete a whole body cut of the material between the perforations; (iii) cleaning the glass article, (iv) air drying the washed glass article; and subsequently (v) subjecting the glass article to a second ion exchange process (eg, at least 4 hrs, or 4.5 hrs to 10 hrs, and in some embodiments) 4.5hrs to 6hrs) to strengthen the glass object and improve the resistance of the glass object to subsequent damage.

The use of a two-step ion exchange process ensures that any glass block removal is limited to the first bath, thereby preventing contamination of the second bath. This extends the life of the second ion exchange bath. By washing and cleaning the components after the first bath, the method also reduces the problems caused by the small glass blocks adhering to the surface of the cutting member, which can shield a small area of the glass surface from the ion exchange process. strengthen.

The IOX or DIOX process (two-stage IOX exchange process) can be used as a first ion exchange process in step (ii) for removing portions of the glass adjacent to the perforated edges and/or corners to create a chamfered glass article . The IOX or DIOX process can also be used thereafter in a second ion exchange step (step (v) above) to completely strengthen the glass to improve the resistance of the glass article to subsequent damage. It should be noted that the second ion exchange step (the enhanced IOX step (v) described above) is more than the step (ii) The ion exchange process for separating or releasing the glass to produce a chamfer or bevel is significantly longer. For example, the time for the first ion exchange bath in the IOX step to promote glass release and bevel/bevel formation in step (ii) may be the IOX step (v) required to produce strengthened or tempered glass (p. The time for the ion exchange bath in the two ion exchange process is 3 to 18 times.

The DIOX process is an ion exchange process in which chemically temperable glass is introduced into a first salt bath and subsequently introduced into a second salt bath. The first salt bath and the second salt bath may comprise two different salt materials, or they may be composed of the same salt material (eg, Li, Na, K, Cs, Rb). For example, the first bath can be pure KCl ₂ and the second salt bath can be KCl ₂ with different concentrations of contaminants, such as Na exchanged from the treated glass. It is also possible to use salt baths of different substances. This method helps to extend the operational life of the salt bath.

Preferably, the first ion exchange process is performed for 10 minutes to 120 minutes. More preferably, to produce a fully chamfered edge or corner, the first ion exchange process is performed for 20 min to 120 min, for example, 20 min, 25 min, 30 min, 45 min, 60 min or 75 min. More preferably, to produce a fully chamfered edge or corner, the first ion exchange process is performed for 20 min to 120 min, for example, 20 min to 60 min, or 30 min to 60 min, and according to some embodiments, 30 min to 50 min, or 30 min to 40 min.

In addition, the IOX or DIOX process (two-stage IOX switching process) can be used to enhance the chamfered glass object. For example, the method can include: a) providing a laser treated perforated glass article (eg, aluminosilicate glass); b) separating the glass along the defect line via the IOX bath and creating a chamfered edge and/or corner, thereby producing Angle glass object, preferably lasting time t so that 20min t 60 min, the degauss glass has a plurality of first metal ions in the outer region; c) ion exchange of the first portion of the plurality of first metal ions in the glass with the plurality of second metal ions in the first salt bath, wherein the first salt The bath is diluted with a first concentration of the first metal ion; and d) ion-exchanges a second portion of the plurality of first metal ions in the glass with a plurality of second metal ions in the secondary salt bath, wherein the secondary salt bath A first metal having a second concentration, the second concentration being less than the first concentration. According to some embodiments, the first metal is one of lithium, sodium, potassium, and cesium, and the second metal is one of sodium, potassium, rubidium, and cesium.

The dehorned glass samples were preheated prior to immersion in a one-stage salt bath of the IOX bath to prevent thermal shock and minimize bath loading (ie, cooling) effects. The preheating temperature depends on the temperature of the salt bath. The sample is then immersed in a first stage bath and the first stage ion exchange stage is carried out at a first predetermined temperature for a time sufficient to achieve the desired layer depth, at which time the glass sample is removed from the primary salt bath and allowed to cool. The glass sample can be washed with water to remove residual dry salt and prevent contamination of the secondary stage bath and then dried to remove residual moisture. It may be desirable to anneal the glass between the individual immersion in the primary salt bath and the secondary salt bath (i.e., between step c and step d).

The glass sample was preheated again prior to immersion in a secondary ion exchange bath. The secondary ion exchange stage is carried out in a secondary stage bath having a new salt (or a significantly lower dilution rate than the primary stage) to increase or stabilize the compressive stress generated in the primary stage ion exchange. The sample is immersed in the bath and the secondary ion exchange phase is carried out at a second predetermined temperature for a time sufficient to achieve the desired compressive stress, at which time the glass sample is removed from the secondary salt bath and allowed to cool. The glass sample can be washed with water to remove residual dry salt and prevent The secondary stage bath is contaminated and then dried to remove residual moisture. For a primary ion exchange bath and a secondary ion exchange bath, the salt (or salts) is melted and heated to a predetermined temperature, typically in the range of from about 380 ° C up to about 450 ° C, and The bath is maintained at that temperature for a predetermined period of time.

The methods described above provide the following benefits, which can be understood as enhanced laser processing capabilities and cost savings, and therefore lower cost manufacturing. In the current embodiment, the cutting and chamfering process provides: chamfering or completely cutting the component with the chamfered edge: the disclosed method is capable of completely separating/cutting Gorilla® glass and other types of clear glass in a clean and controlled manner. Complete separation and/or edge chamfering are demonstrated using two methods. Using Method 1, the part is cut to size or separated from the glass substrate with the chamfered edge and, in principle, no further post-treatment. Using the second method, the part has been cut to size, perforated, and the IOX process is used to chamfer the edges.

Reduced subsurface defects: Due to the ultrashort pulse interaction between the laser and the material, there is little thermal interaction, and thus there is little minimum heat affected zone that can lead to undesirable stresses and microcracks. Additionally, the optical elements that concentrate the laser beam into the glass create defect lines having a diameter of typically 2 microns to 5 microns on the surface of the component. After the separation, the subsurface damage can be as low as <90 μm, such as <75 μm, <50 μm or <40 μm. This has a large effect on the edge strength of the part and reduces the need for further grinding and polishing of the edges, as such under-surface damage can grow and develop into microcracks and weaken the strength of the edges when subjected to tensile stress.

Process Cleanliness: The exemplary embodiment method of the present disclosure is capable of chamfering the glass in a clean and controlled manner. The use of conventional ablation processes is highly problematic because of the large amount of debris generated by such processes. Debris from such ablation is problematic because it can be difficult to remove, even with various cleaning and washing protocols. Any adhering particles can cause defects in a later process in which the glass is coated or metallized to produce a thin film transistor or the like. The laser pulse of the disclosed method and the characteristic of the induced interaction with the material avoid this problem because it occurs in a very short time scale and the material transparency to the laser of the laser radiation minimizes the induced thermal effect. Since the defect line is generated in the object, the presence of debris and adhering particles during the cutting step is virtually eliminated. If any particles are obtained from the resulting defect line, the particles will be fully contained until the parts are separated.

Eliminate process steps

The process for making a glass sheet from the introduction of a glass panel to the final size and shape involves several steps, including cutting the panel, cutting to the appropriate size, finishing and edge forming, thinning the part down to its target thickness, polishing, and in some Even chemical strengthening in the situation. Elimination of any of these steps will save manufacturing costs in terms of process time and capital costs. The method of the present invention can reduce the number of steps by, for example, reducing debris and edge defect generation - possible elimination of washing and drying stations.

The sample is cut directly into its final size, shape and thickness with the shaped edges - reducing or eliminating the need for mechanical finishing lines and the associated non-value added costs.

The teachings of all patents, published applications and references cited herein are hereby incorporated by reference in their entirety.

Although the exemplary embodiments have been described herein, it will be understood by those skilled in the art that various forms can be made in the embodiments without departing from the scope of the inventions Changes and changes in detail.

Claims (22)

A method of degaussing a material, comprising the steps of: focusing a beam of laser beams into a laser beam focal line as viewed in a direction of beam propagation; and focusing the laser beam on one of the materials An angle of incidence is directed into the material, the laser beam causing an induced absorption in the material, the inducing absorption in the material to create a defect line along the focal line of the laser beam; the material and the laser The beams are translated relative to each other to further drill a plurality of defect lines at a first angle in the material at a first angle; the laser beam focal line is directed to the second angle of incidence of the material to the In the material, the laser beam focal line produces an induced absorption in the material that absorbs a defect line along the focal line of the laser beam; the material and the laser beam are translated relative to each other And drilling a plurality of defect lines in the material at a second angle along the second plane, the second plane intersecting the first plane, and applying the ion exchange process to the material Separating along the first plane and the second plane, During the separation along the first plane and the second plane of the material, ion exchange material is applied to the process time t, wherein 10min t 120min. The method of claim 1, wherein the step of directing the laser beam focal line into the material at a first angle of incidence of the material is directed to a first surface of the material, and the laser is The beam focal line is directed to a second surface of the material by a step of directing a second angle of incidence of the material into the material. The method of claim 2, wherein the material is separated along the first plane and the second plane to define a chamfered edge. The method of claim 1 further comprising: directing the laser beam focal line into the material at a third angle of incidence of the material, the laser beam causing an induced absorption in the material Inducing absorption into the material to create a defect line along the focal line of the laser beam; and translating the material and the laser beam relative to one another, thereby passing the third angle in the material along a third plane The laser drills a plurality of defect lines; wherein at least two of the first plane, the second plane, and the third plane intersect. The method of claim 4, wherein the material is separated along the first plane, the second plane, and the third plane to define a chamfered edge. The method of claim 4, wherein one of the first angle, the second angle, and the third angle is perpendicular to a surface of the material. The method of any of the preceding claims, wherein the pulse duration is in a range between greater than about 1 picosecond and less than about 100 picoseconds. The method of claim 7, wherein the pulse duration is in a range between greater than about 5 picoseconds and less than about 20 picoseconds. The method of claim 1, wherein the repetition rate is in a range between about 1 kHz and 2 MHz. The method of claim 7, wherein the repetition rate is in a range between about 10 kHz and 650 kHz. The method of any of claims 1 to 6 , wherein the pulsed laser beam has an average laser power of greater than 40 μj per mm thickness of material measured at the material. The method of any one of claims 1 to 6 , wherein the pulse is generated by an explosion of at least two pulses, the pulses being separated by a duration of a range between about 1 nsec and about 50 nsec, And the burst repetition frequency is in a range between about 1 kHz and about 650 kHz. The method of any of claims 1 to 6 , wherein the pulsed laser beam has a wavelength selected such that the material or workpiece is substantially transparent at the wavelength. The method of any of claims 1 to 6 , wherein (i) the laser beam focal line has a length within a range between about 0.1 mm and about 100 mm; and/or (ii) the laser beam focus The line has an average spot diameter within a range between about 0.1 [mu]m and about 5 [mu]m. The method of any of claims 1 to 6 , wherein the material or the workpiece comprises non-reinforced glass. The method of any one of claims 1 to 6 , wherein the ion exchange process is applied to the material time t during the separation of the material along the first plane and the second plane, wherein 20 min t 60min. The method of any of claims 1 to 6 , further comprising the step of subjecting the material to a second ion exchange process to strengthen the material and to improve the resistance of the material to subsequent damage. A method of chamfering a material, comprising the steps of: focusing a beam of laser beams into a laser beam focal line as viewed in a beam propagation direction; and for each of the N planes, by following the steps Each of the N planes drills a plurality of defect lines within the material: the laser beam focal line is directed into the material at a corresponding incident angle of the material, the laser beam focal line Generating an induced absorption in the material that absorbs a defect line along the focal line of the laser beam; and translating the material and the laser beam relative to each other, thereby along the N planes Corresponding planar lasers drill the plurality of defect lines; and separating the material along at least one of the N planes by applying an ion exchange process to the material. A method of making a chamfered and tempered glass article, the method comprising the steps of: (i) providing a glass article having a selected contour and a glass surface, and a perforated edge and/or corner; Removing a portion of the glass adjacent to the edge of the perforation and/or corner by subjecting the article to a first ion exchange process to complete a whole body cut between the perforations; cleaning the glass article and air drying the cleaned glass And subsequently subjecting the glass article to a second ion exchange process to strengthen the glass article and improve the resistance of the glass article to subsequent damage. A glass article prepared by the method of claim 1, 18 or 19 . The glass article of claim 20, wherein the chamfered edge has a Ra surface roughness of less than about 0.5 μm. The glass article of claim 20, wherein the chamfered edge has a subsurface fracture of up to a depth of less than or equal to about 75 μm, preferably less than or equal to about 30 μm.