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TW201534631A - 底部塡充材料及使用其之半導體裝置的製造方法 - Google Patents

底部塡充材料及使用其之半導體裝置的製造方法 Download PDF

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Publication number
TW201534631A
TW201534631A TW103131084A TW103131084A TW201534631A TW 201534631 A TW201534631 A TW 201534631A TW 103131084 A TW103131084 A TW 103131084A TW 103131084 A TW103131084 A TW 103131084A TW 201534631 A TW201534631 A TW 201534631A
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TW
Taiwan
Prior art keywords
underfill material
resin
epoxy resin
acid anhydride
acrylic
Prior art date
Application number
TW103131084A
Other languages
English (en)
Inventor
Hironobu Moriyama
Original Assignee
Dexerials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dexerials Corp filed Critical Dexerials Corp
Publication of TW201534631A publication Critical patent/TW201534631A/zh

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    • H—ELECTRICITY
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    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
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    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
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Abstract

本發明提供一種抑制焊料之過度壓碎而實現良好之焊接性之底部填充材料、及使用其之半導體裝置之製造方法。本發明使用底部填充材料(20)，其含有膜形成樹脂、環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，該膜形成樹脂含有丙烯酸橡膠聚合物。由於含有丙烯酸橡膠聚合物作為膜形成樹脂，故可抑制焊料之過度壓碎而實現良好之焊接性。

Description

底部填充材料及使用其之半導體裝置的製造方法
本發明係關於一種用於構裝半導體晶片之底部填充材料、及使用其之半導體裝置之製造方法。
近年來，於半導體晶片之構裝方法中，為了縮短步驟，業界正研究使用在半導體IC(Integrated Circuit，積體電路)電極上貼附底部填充膜之「預供給型底部填充膜(PUF：Pre-applied Underfill Film)」。
使用該預供給型底部填充膜之構裝方法例如藉由如下方式進行(例如參照專利文獻1)。
步驟A：於晶圓上貼附底部填充膜，進行切割而獲得半導體晶片。
步驟B：於貼合有底部填充膜之狀態下，將半導體晶片位置對準而搭載。
步驟C：將半導體晶片熱壓接，藉由焊點凸塊之金屬鍵而確保傳導，及藉由底部填充膜之硬化而進行接著。
關於此種構裝方法，提出有使用環氧樹脂作為接合焊點凸塊之接著劑的熱硬化接著劑。關於該接著劑，提出有藉由使用酸酐作為環氧 樹脂之硬化劑，去除焊點凸塊表面之氧化膜，而使焊接性變得良好的調配組成(例如參照專利文獻2)。然而，於使用酸酐之情形時，焊接性雖然良好，但有時硬化慢而過度壓碎焊點凸塊。
[專利文獻1]日本特開2005-28734號公報
[專利文獻2]日本特開2006-335817號公報
本發明係鑒於此種習知之實際情況而提出者，提供一種抑制焊料之過度壓碎而實現良好焊接性之底部填充材料、及使用其之半導體裝置之製造方法。
為了解決上述課題，本發明係一種於將形成有附焊料電極之半導體晶片搭載於形成有與附焊料電極對向之對向電極的電子零件之前，被預先貼合於半導體晶片的底部填充材料，其特徵在於：含有膜形成樹脂、環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，上述膜形成樹脂含有丙烯酸橡膠聚合物。
又，本發明之半導體裝置之製造方法的特徵在於具有：搭載步驟：將形成有附焊料電極且於該電極面貼合有底部填充材料之半導體晶片搭載於形成有與上述附焊料電極對向之對向電極的電子零件；及熱壓接步驟：將上述半導體晶片與上述電子零件以既定升溫速度自第1溫度升溫至第2溫度而進行熱壓接，上述底部填充材料含有膜形成樹脂、環氧樹脂、酸酐、丙烯酸樹脂、 及有機過氧化物，上述膜形成樹脂含有丙烯酸橡膠聚合物。
根據本發明，由於有含丙烯酸橡膠聚合物作為膜形成樹脂，故可抑制焊料之過度壓碎而實現良好之焊接性。
1‧‧‧晶圓
2‧‧‧底部填充膜
3‧‧‧治具
4‧‧‧刀片
10‧‧‧半導體晶片
11‧‧‧半導體
12‧‧‧電極
13‧‧‧焊料
20‧‧‧底部填充材料
21‧‧‧接著劑層
30‧‧‧電路基板
31‧‧‧基材
32‧‧‧對向電極
圖1係示意地表示搭載前之半導體晶片與電路基板之剖面圖。
圖2係示意地表示搭載時之半導體晶片與電路基板之剖面圖。
圖3係示意地表示熱壓接後之半導體晶片與電路基板之剖面圖。
圖4係表示本實施形態之半導體裝置之製造方法的流程圖。
圖5係示意地表示在晶圓上貼附底部填充膜之步驟之立體圖。
圖6係示意地表示切割晶圓之步驟之立體圖。
圖7係示意地表示拾取半導體晶片之步驟之立體圖。
以下，按照下述順序對本發明之實施形態進行詳細說明。
1.底部填充材料
2.半導體裝置之製造方法
3.實施例
<1.底部填充材料>
本實施形態之底部填充材料係於將形成有附焊料電極之半導體晶片搭載於形成有與附焊料電極對向之對向電極的電子零件之前，預先貼合於半 導體晶片者。
圖1係示意地表示搭載前之半導體晶片與電路基板之剖面圖，圖2係示意地表示搭載時之半導體晶片與電路基板之剖面圖，及圖3係示意地表示熱壓接後之半導體晶片與電路基板之剖面圖。
如圖1~圖3所示，本實施形態之底部填充材料20係預先貼合於形成有附焊料電極之半導體晶片10的電極面而使用，利用底部填充材料20硬化而成之接著層21，將半導體晶片10與形成有與附焊料電極對向之對向電極之電路基板30進行接合。
半導體晶片10於矽等半導體11表面形成有積體電路，並具有稱為凸塊之連接用附焊料電極。附焊料電極係於由銅等構成之電極12上接合有焊料13者，且具有將電極12厚度與焊料13厚度合計之厚度。
作為焊料，可使用Sn-37Pb共晶焊料(熔點183℃)、Sn-Bi焊料(熔點139℃)、Sn-3.5Ag(熔點221℃)、Sn-3.0Ag-0.5Cu(熔點217℃)、Sn-5.0Sb(熔點240℃)等。
電路基板30於例如硬質基板、可撓性基板等基材31上形成電路。又，於搭載半導體晶片10之構裝部形成有對向電極32，該對向電極32在與半導體晶片10之附焊料電極對向之位置形成具有既定厚度。
底部填充材料20含有膜形成樹脂、環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物。
膜形成樹脂相當於重量平均分子量為10×104以上之高分子量樹脂，就膜形成性之觀點而言，較佳為10×104~100×104之重量平均分子量。作為膜形成樹脂，可使用丙烯酸橡膠聚合物、苯氧基樹脂、環氧樹脂、 改質環氧樹脂、胺基甲酸酯樹脂等各種樹脂。該等膜形成樹脂可單獨使用1種，亦可組合2種以上而使用。該等之中，就膜強度及接著性之觀點而言，本實施形態較佳使用具有環氧丙基之丙烯酸橡膠聚合物。又，丙烯酸橡膠聚合物之玻璃轉移溫度Tg較佳為-30℃以上20℃以下。藉此，可提高底部填充材料20之可撓性。
作為環氧樹脂，例如可列舉：倍環戊二烯型環氧樹脂、縮水甘油醚型環氧樹脂、縮水甘油胺型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、螺環型環氧樹脂、萘型環氧樹脂、聯苯型環氧樹脂、萜烯型環氧樹脂、四溴雙酚A型環氧樹脂、甲酚酚醛清漆型環氧樹脂、苯酚酚醛清漆型環氧樹脂、α-萘酚酚醛清漆型環氧樹脂、溴化苯酚酚醛清漆型環氧樹脂等。該等環氧樹脂可單獨使用1種，亦可組合2種以上而使用。該等之中，就高接著性、耐熱性之方面而言，本實施形態較佳使用倍環戊二烯型環氧樹脂。
酸酐具有去除焊料表面之氧化膜之助熔功能，因此可獲得優異之連接可靠性。作為酸酐，例如可列舉：四丙烯基琥珀酸酐、十二烯基琥珀酸酐等脂肪族酸酐，六氫鄰苯二甲酸酐、甲基四氫鄰苯二甲酸酐等脂環式酸酐，鄰苯二甲酸酐、偏苯三甲酸酐、均苯四甲酸二酐等芳香族酸酐等。該等環氧硬化劑可單獨使用1種，亦可組合2種以上而使用。該等環氧硬化劑之中，就該等中之焊料連接性之方面而言，較佳使用脂肪族酸酐。
又，較佳添加硬化促進劑。作為硬化促進劑之具體例，可列舉：2-甲基咪唑、2-乙基咪唑、2-乙基-4-甲基咪唑等咪唑類、1,8-二氮雙環(5,4,0)十一烯-7鹽(DBU鹽)、2-(二甲基胺基甲基)苯酚等三級 胺類、三苯基膦等膦類、辛酸錫等金屬化合物等。
作為丙烯酸樹脂，可使用單官能(甲基)丙烯酸酯、2官能以上之(甲基)丙烯酸酯。作為單官能(甲基)丙烯酸酯，可列舉：(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯等。作為2官能以上之(甲基)丙烯酸酯，可列舉：雙酚F-EO改質二(甲基)丙烯酸酯、雙酚A-EO改質二(甲基)丙烯酸酯、三羥甲基丙烷PO改質(甲基)丙烯酸酯、多官能(甲基)丙烯酸胺基甲酸酯等。該等丙烯酸樹脂可單獨使用，亦可組合2種以上而使用。該等之中，本實施形態較佳使用2官能(甲基)丙烯酸酯。
作為有機過氧化物，例如可列舉：過氧化酯、過氧縮酮、過氧化氫、過氧化二烷基、過氧化二醯基、過氧化二碳酸酯等。該等有機過氧化物可單獨使用，亦可組合2種以上而使用。該等之中，本實施形態較佳使用過氧化酯。
又，作為其他添加組成物，較佳含有無機填料。藉由含有無機填料，可調整壓接時之樹脂層的流動性。作為無機填料，可使用矽石、滑石、氧化鈦、碳酸鈣、氧化鎂等。
並且，亦可視需要添加環氧系、胺基系、巰基-硫醚系、脲基系等之矽烷偶合劑。
藉由如此併用硬化反應相對較慢之環氧系、與硬化反應相對較快之丙烯酸，可抑制焊料之過度壓碎而實現良好之焊接性。具體而言，環氧樹脂與酸酐之合計質量和丙烯酸樹脂與有機過氧化物之合計質量的比較佳為7：3~3：7。藉此，可獲得實現無空隙構裝及良好焊接性之底部填 充材料。
其次，對上述底部填充材料形成為膜狀之預供給型底部填充膜之製造方法進行說明。首先，使含有膜形成樹脂、環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物之接著劑組成物溶解於溶劑中。作為溶劑，可使用甲苯、乙酸乙酯等、或該等之混合溶劑。於製備樹脂組成物後，利用棒式塗佈機、塗佈裝置等塗佈於剝離基材上。
剝離基材例如係由如下積層構造構成，而防止組成物之乾燥，並且維持組成物之形狀，上述積層構造係將聚矽氧等剝離劑塗佈於PET(Poly Ethylene Terephthalate，聚對苯二甲酸乙二酯)、OPP(Oriented Polypropylene，延伸聚丙烯)、PMP(Poly-4-methylpentene-1，聚-4-甲基戊烯-1)、PTFE(Polytetrafluoroethylene，聚四氟乙烯)等而成。
其次，藉由熱烘箱、加熱乾燥裝置等使塗佈於剝離基材上之樹脂組成物乾燥。藉此，可獲得既定厚度之預供給型底部填充膜。
<2.半導體裝置之製造方法>
其次，對使用上述預供給型底部填充膜之半導體裝置之製造方法進行說明。
圖4係表示本實施形態之半導體裝置的製造方法之流程圖。如圖4所示，本實施形態之半導體裝置之製造方法含有：底部填充膜貼附步驟S1、切割步驟S2、半導體晶片搭載步驟S3、及熱壓接步驟S4。
圖5係示意地表示在晶圓上貼附底部填充膜之步驟的立體圖。如圖5所示，底部填充膜貼附步驟S1係藉由具有大於晶圓1直徑之直徑且具有環狀或框狀框架的治具3以固定晶圓1，於晶圓1上貼附底部填充 膜2。底部填充膜2係於切割晶圓1時保護並固定晶圓1，於拾取時作為保持之切割膠帶發揮功能。再者，於晶圓1內嵌製作有大量IC(Integrated Circuit)，於晶圓1之接著面對每個如圖1所示般藉由劃線劃分之半導體晶片10設置附焊料電極。
圖6係示意地表示切割晶圓之步驟之立體圖。如圖6所示，切割步驟S2係沿劃線按壓刀片4來切削晶圓1，而分割成各個半導體晶片。
圖7係示意地表示拾取半導體晶片之步驟之立體圖。如圖7所示，各附底部填充膜之半導體晶片10係於保持底部填充膜之狀態下被拾取。
如圖2所示，半導體晶片搭載步驟S3係將附底部填充膜之半導體晶片10與電路基板30經由底部填充膜進行配置。又，將附底部填充膜之半導體晶片10以附焊料電極與對向電極32對向之方式進行位置對準而配置。然後，藉由加熱接合機，於使底部填充膜產生流動性但未發生正式硬化之程度的既定溫度、壓力、時間之條件下進行加熱按壓而搭載。
搭載時之溫度條件較佳為30℃以上155℃以下。又，壓力條件較佳為50N以下，更佳為40N以下。又，時間條件較佳為0.1秒以上10秒以下，更佳為0.1秒以上1.0秒以下。藉此，可成為不使附焊料電極熔融而與電路基板30側之電極接觸之狀態，可成為底部填充膜未完全硬化之狀態。又，由於在低溫下進行固定，故可抑制空隙之產生，減少對半導體晶片10之損壞。
以下之熱壓接步驟S4例如係於以既定升溫速度自第1溫度升溫至第2溫度之接合條件下，使附焊料電極之焊料熔融而形成金屬鍵， 並且使底部填充膜完全硬化。
第1溫度較佳為與底部填充材料之最低熔融黏度到達溫度大致相同，較佳為50℃以上150℃以下。藉此，可使底部填充材料之硬化行為與接合條件吻合，可抑制空隙之產生。
又，升溫速度較佳為50℃/sec以上150℃/sec以下。又，第2溫度亦取決於焊料之種類，較佳為200℃以上280℃以下，更佳為220℃以上260℃以下。藉此，可使附焊料電極與基板電極進行金屬鍵結，並且使底部填充膜完全硬化，而將半導體晶片10之電極與電路基板30之電極電性地、機械性地連接。
又，於熱壓接步驟S4中，接合頭至搭載後之底部填充膜的開始熔融溫度為止係藉由樹脂之彈性模數而保持為一定高度，其後因升溫所伴隨之樹脂熔融而瞬間下降，到達頭之最低點。該最低點係根據頭之下降速度與樹脂之硬化速度的關係而決定。樹脂硬化進一步進行後，頭之高度隨著樹脂及頭之熱膨脹而緩慢地上升。如此，藉由在自第1溫度升溫至第2溫度之時間內使接合頭下降至最低點，可抑制隨著樹脂熔融之空隙產生。
如此，本實施形態之半導體裝置之製造方法藉由將底部填充材料預先貼合於形成有附焊料電極之半導體晶片10，可抑制焊料之過度壓碎而實現良好之焊接性，上述底部填充材料含有膜形成樹脂、環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，膜形成樹脂含有丙烯酸橡膠聚合物。
再者，上述實施形態係使底部填充膜作為切割膠帶發揮功能，但並不限定於此，亦可另外使用切割膠帶，於切割後使用底部填充膜 進行覆晶構裝。
[其他實施形態]
又，本技術亦可應用於藉由向設置於半導體晶片之小孔內填充金屬，而電連接堆積成夾層狀之多個晶片基板的TSV(Through Silicon Via，矽穿孔)技術。
即，亦可應用於將具有形成有附焊料電極之第一面、及於第一面之相反側形成有與附焊料電極對向之對向電極的第二面之多個晶片基板積層的半導體裝置之製造方法。
於此情形時，於第一晶片基板之第一面側貼附有底部填充膜之狀態下，搭載於第二晶片基板之第二面。其後，可藉由在附焊料電極之焊料的熔點以上之溫度將第一晶片基板之第一面與第二晶片基板之第二面熱壓接，而獲得積層有多個晶片基板之半導體裝置。
[實施例]
<3.實施例>
以下，對本發明之實施例進行說明。於本實施例中，製作預供給型底部填充膜。然後，使用底部填充膜將具有附焊料電極之第一IC晶片、及具有與其對向之電極之第二IC晶片連接而製作構裝體，對焊料伸出及焊接性進行評價。再者，本發明並不限定於該等實施例。
構裝體之製作、焊料伸出之評價及焊接性之評價係以如下方式進行。
[構裝體之製作]
於50℃、0.5MPa之條件下利用壓製機將底部填充膜貼合於晶圓上，進 行切割而獲得具有附焊料電極之第一IC晶片。
第一IC晶片係大小為7mm□，厚度為200μm，且具有周邊配置之凸塊(30μm、85μm間距、280針)者，該周邊配置之凸塊於厚度10μm之由Cu構成的電極前端形成有厚度10μm之焊料(Sn-3.5Ag、熔點221℃)。
又，與其對向之第二IC晶片同樣具有大小為8mm□、厚度100μm且於由厚度10μm之Cu構成之電極前端形成有厚度10μm之焊料(Sn-3.5Ag、熔點221℃)的周邊配置之凸塊(30μm、85μm間距、280針)。
其次，於60℃、0.5秒、30N之條件下利用覆晶接合機將第一IC晶片搭載於第二IC晶片上。
其後，於10秒內使溫度自60℃上升至250℃，利用覆晶接合機進行熱壓接。又，於自80℃升溫至250℃之時間內，使接合頭下降至最低點(30N)。進而，於150℃、2小時之條件進行硬化(cure)而獲得構裝體。再者，使用覆晶接合機時之溫度係藉由熱電偶測定樣品之實際溫度而得者。
[焊料伸出之評價]
切斷各構裝體，進行剖面研磨，利用SEM(Scanning Electron Microscope，掃描電子顯微鏡)觀察電極間之焊料伸出之狀態。將焊料伸出距離為7μm以下者評價為○，將焊料伸出距離超過7μm者評價為×。
[焊接性之評價]
切斷各構裝體，進行剖面研磨，利用SEM(Scanning Electron Microscope，掃描電子顯微鏡)觀察電極間之焊料接合界面。將無焊料接合界面之情況 評價為○，將夾入樹脂而存在焊料接合界面之情況評價為×。
<實施例1>
如表1所示，調配丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)15.0質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)15.0質量份、酸酐(品名：MH-700，新日本理化公司製造)9.0質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.3質量份、丙烯酸樹脂(品名：DCP-A，新中村化學公司製造)23.7質量份、起始劑(品名：Perbutyl Z，日本油脂公司製造)0.3質量份、填料A(品名：SO-E5，Admatechs公司製造)31.5質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備聚合成分之環氧樹脂與丙烯酸樹脂之比為50：50的底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度40μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(40μm)/基底剝離PET(50μm))。
使用實施例1之底部填充膜製作之構裝體的晶片間之間隙為30μm，底部填充膜之壓縮率為25%。又，構裝體的焊料伸出之評價為○，焊接性之評價為○。
<實施例2>
如表1所示，調配丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)15.0質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)21.0質量份、酸酐(品名：MH-700，新日本理化公司製造)12.6質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.4質量份、 丙烯酸樹脂(品名：DCP-A，新中村化學公司製造)14.2質量份、起始劑(品名：Perbutyl Z，日本油脂公司製造)0.2質量份、填料A(品名：SO-E5，Admatechs公司製造)31.5質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備聚合成分之環氧樹脂與丙烯酸樹脂之比為70：30的底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度40μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(40μm)/基底剝離PET(50μm))。
使用實施例2之底部填充膜製作之構裝體的晶片間之間隙為24μm，底部填充膜之壓縮率為40%。又，構裝體的焊料伸出之評價為○，焊接性之評價為○。
<實施例3>
如表1所示，調配丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)15.0質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)9.0質量份、酸酐(品名：MH-700，新日本理化公司製造)5.4質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.2質量份、丙烯酸樹脂(品名：DCP-A，新中村化學公司製造)33.2質量份、起始劑(品名：Perbutyl Z，日本油脂公司製造)0.4質量份、填料A(品名：SO-E5，Admatechs公司製造)31.5質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備聚合成分之環氧樹脂與丙烯酸樹脂之比為30：70的底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘， 製作厚度40μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(40μm)/基底剝離PET(50μm))。
使用實施例3之底部填充膜製作之構裝體的晶片間之間隙為34μm，底部填充膜之壓縮率為15%。又，構裝體的焊料伸出之評價為○，焊接性之評價為○。
<比較例1>
如表1所示，調配丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)15.0質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)30.0質量份、酸酐(品名：MH-700，新日本理化社)18.0質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.5質量份、填料A(品名：SO-E5，Admatechs公司製造)31.5質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備聚合成分之環氧樹脂與丙烯酸樹脂之比為100：0的底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度40μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(40μm)/基底剝離PET(50μm))。
使用比較例1之底部填充膜製作之構裝體的晶片間之間隙為20μm，底部填充膜之壓縮率為50%。又，構裝體的焊料伸出之評價為×，焊接性之評價為○。
<比較例2>
如表1所示，調配丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)15.0質量份、環氧樹脂(品名：HP7200H，大日本油墨化 學公司製造)24.0質量份、酸酐(品名：MH-700，新日本理化公司製造)14.4質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.4質量份、丙烯酸樹脂(品名：DCP-A，新中村化學公司製造)9.5質量份、起始劑(品名：Perbutyl Z，日本油脂公司製造)0.1質量份、填料A(品名：SO-E5，Admatechs公司製造)31.5質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備聚合成分之環氧樹脂與丙烯酸樹脂之比為80：20的底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度40μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(40μm)/基底剝離PET(50μm))。
使用比較例2之底部填充膜製作之構裝體的晶片間之間隙為22μm，底部填充膜之壓縮率為45%。又，構裝體的焊料伸出之評價為×，焊接性之評價為○。
<比較例3>
如表1所示，調配丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)15.0質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)6.0質量份、酸酐(品名：MH-700，新日本理化公司製造)3.6質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.1質量份、丙烯酸樹脂(品名：DCP-A，新中村化學公司製造)38.0質量份、起始劑(品名：Perbutyl Z，日本油脂公司製造)0.4質量份、填料A(品名：SO-E5，Admatechs公司製造)31.5質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備聚合成分之環氧樹脂與丙烯酸樹 脂之比為20：80的底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度40μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(40μm)/基底剝離PET(50μm))。
使用比較例3之底部填充膜製作之構裝體的晶片間之間隙為36μm，底部填充膜之壓縮率為10%。又，構裝體的焊料伸出之評價為○，焊接性之評價為×。
<比較例4>
如表1所示，調配丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)15.0質量份、丙烯酸樹脂(品名：DCP-A，新中村化學公司製造)47.5質量份、起始劑(品名：Perbutyl Z，日本油脂公司製造)0.5質量份、填料A(品名：SO-E5，Admatechs公司製造)31.5質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備聚合成分之環氧樹脂與丙烯酸樹脂之比為0：100的底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度40μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(40μm)/基底剝離PET(50μm))。
使用比較例4之底部填充膜製作之構裝體的晶片間之間隙為38μm，底部填充膜之壓縮率為5%。又，構裝體的焊料伸出之評價為○，焊接性之評價為×。
<比較例5>
如表1所示，調配苯氧基樹脂(品名：PKHH，Union Carbide公司製造) 15.0質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)15.0質量份、酸酐(品名：MH-700，新日本理化公司製造)9.0質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.3質量份、丙烯酸樹脂(品名：DCP-A，新中村化學公司製造)23.7質量份、起始劑(品名：Perbutyl Z，日本油脂公司製造)0.3質量份、填料A(品名：SO-E5，Admatechs公司製造)31.5質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備聚合成分之環氧樹脂與丙烯酸樹脂之比為50：50的底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度40μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(40μm)/基底剝離PET(50μm))。
使用比較例5之底部填充膜製作之構裝體的晶片間之間隙為22μm，底部填充膜之壓縮率為45%。又，構裝體的焊料伸出之評價為×，焊接性之評價為○。
<比較例6>
如表1所示，調配聚丁二烯(品名：TEAI-1000，日本曹達公司製造)15.0質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)15.0質量份、酸酐(品名：MH-700，新日本理化公司製造)9.0質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.3質量份、丙烯酸樹脂(品名：DCP-A，新中村化學公司製造)23.7質量份、起始劑(品名：Perbutyl Z，日本油脂公司製造)0.3質量份、填料A(品名：SO-E5，Admatechs公司製造)31.5質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造) 5.0質量份，而製備聚合成分之環氧樹脂與丙烯酸樹脂之比為50：50的底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度40μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(40μm)/基底剝離PET(50μm))。
使用比較例6之底部填充膜製作之構裝體的晶片間之間隙為20μm，底部填充膜之壓縮率為50%。又，構裝體的焊料伸出之評價為×，焊接性之評價為○。
比較例1、2中，由於硬化反應相對較快之丙烯酸的調配比率小，故而壓縮率高，過度壓碎焊料、焊料伸出多。比較例3、4中，由於丙烯酸之調配比率大，故於壓碎焊料前發生硬化，而無法獲得良好之焊接。又，比較例5、6中，由於分別調配苯氧基樹脂、聚丁二烯作為膜形成樹脂，故過度壓碎焊料。
實施例1~3中，環氧樹脂與酸酐之合計質量、與丙烯酸樹脂與有機過氧化物之合計質量的比為7：3~3：7，由於調配丙烯酸橡膠聚合物作為膜形成樹脂，可抑制焊料之過度壓碎而實現良好之焊接性。

Claims (15)

  1. 一種底部填充材料，係於將形成有附焊料電極之半導體晶片搭載於形成有與附焊料電極對向之對向電極的電子零件之前，被預先貼合於半導體晶片，該底部填充材料含有膜形成樹脂、環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，該膜形成樹脂含有丙烯酸橡膠聚合物。
  2. 如申請專利範圍第1項之底部填充材料，其中，該環氧樹脂與該酸酐之合計質量和該丙烯酸樹脂與該有機過氧化物之合計質量的比為7：3~3：7。
  3. 如申請專利範圍第1或2項之底部填充材料，其中，該丙烯酸橡膠聚合物具有環氧丙基。
  4. 如申請專利範圍第1或2項之底部填充材料，其中，該丙烯酸橡膠聚合物之重量平均分子量為10×104~100×104。
  5. 如申請專利範圍第3項之底部填充材料，其中，該丙烯酸橡膠聚合物之重量平均分子量為10×104~100×104。
  6. 如申請專利範圍第1或2項之底部填充材料，其中，該環氧樹脂為倍環戊二烯型環氧樹脂，該酸酐為脂肪族酸酐。
  7. 如申請專利範圍第3項之底部填充材料，其中，該環氧樹脂為倍環戊二烯型環氧樹脂，該酸酐為脂肪族酸酐。
  8. 如申請專利範圍第4項之底部填充材料，其中，該環氧樹脂為倍環戊二烯型環氧樹脂，該酸酐為脂肪族酸酐。
  9. 如申請專利範圍第5項之底部填充材料，其中，該環氧樹脂為倍環戊二烯型環氧樹脂，該酸酐為脂肪族酸酐。
  10. 如申請專利範圍第1或2項之底部填充材料，其中，該丙烯酸樹脂為2官能(甲基)丙烯酸酯，該有機過氧化物為過氧化酯。
  11. 如申請專利範圍第3項之底部填充材料，其中，該丙烯酸樹脂為2官能(甲基)丙烯酸酯，該有機過氧化物為過氧化酯。
  12. 如申請專利範圍第4項之底部填充材料，其中，該丙烯酸樹脂為2官能(甲基)丙烯酸酯，該有機過氧化物為過氧化酯。
  13. 如申請專利範圍第5項之底部填充材料，其中，該丙烯酸樹脂為2官能(甲基)丙烯酸酯，該有機過氧化物為過氧化酯。
  14. 如申請專利範圍第6項之底部填充材料，其中，該丙烯酸樹脂為2官能(甲基)丙烯酸酯，該有機過氧化物為過氧化酯。
  15. 一種半導體裝置之製造方法，其具有：搭載步驟：將形成有附焊料電極且於該電極面貼合有底部填充材料之半導體晶片搭載於形成有與該附焊料電極對向之對向電極的電子零件；及熱壓接步驟：將該半導體晶片與該電子零件以既定升溫速度自第1溫度升溫至第2溫度而進行熱壓接，該底部填充材料含有膜形成樹脂、環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物，該膜形成樹脂含有丙烯酸橡膠聚合物。
TW103131084A 2013-09-27 2014-09-10 底部塡充材料及使用其之半導體裝置的製造方法 TW201534631A (zh)

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