TW201530610A - Temporary-bonded wafer systems and methods of making the same - Google Patents

Abstract

Provided in various embodiments are a temporary-bonded wafer system comprising a substrate having a first surface and a second surface opposite the first surface, a release layer positioned on the first surface of the substrate, an adhesive layer positioned over the release layer, wherein outer edges of the adhesive layer contact the substrate, thereby forming an effective seal over the release layer, and a carrier wafer bonded to the adhesive layer.

Description

Temporary bonded wafer system and method of manufacturing same

The present disclosure is generally directed to materials and methods for processing wafers used in the production of semiconductor products.

One of the success factors in determining the next phase of 3D IC integration using through-silicon via (TSV) is the ability to handle thin wafers through various processing steps involved in the manufacture of TSVs. One such requirement is a temporary bonding adhesive (TBA) that can be used to form an adhesive layer (AL) that can withstand exposure to elevated temperatures, acids, bases, and solvents.

One obstacle to incorporating wafer support system technology into mass production semiconductor manufacturing industries is the performance of TBA. The adhesive used to temporarily bond the active device wafer to the carrier wafer must have good thermal, chemical, and mechanical stability to withstand subsequent processing steps as previously described, such as back grinding, photo etching, metal deposition , electroplating, passivation, combinations thereof, and the like.

The microelectronics industry currently uses one, two (or two), and three layers to achieve temporary wafer bonding and detachment during semiconductor component fabrication. The basic requirements for temporary wafer bonding include: (i) the ability to withstand exposure to temperatures above about 260 ° C and above 260 ° C. (ii) the ability to survive wafer thinning; (iii) the ability to easily detach and clean; (iv) high yields; and (v) various chemicals used in the semiconductor industry (solvents) , acid, alkali, etc.) resistance. Due to thickness control, simplicity, and rapid processing, materials can be applied to the wafer using spin coating, spray coating, or other suitable coating techniques.

In a representative layer mode, crosslinked oxazolines can be used to pattern The wafer is bonded to the support wafer. After performing wafer polishing and TSV processing, the wafer is separated by exposing the wafer to a high temperature (about 285 ° C) and then separating the wafer by mechanical sliding. Since the process of joining and disengaging must be performed at high temperatures and often requires strict solvent cleaning to remove any residue, this approach can result in high cost, low throughput, and/or low productivity.

Layer 2 uses additional layers to assist in supporting wafers and thin patterned wafers Get rid of. In a typical two layer approach, a release layer (RL) is applied to the active device wafer to form a RL coated wafer. The adhesive layer can then be bonded to the carrier wafer to the RL coated wafer. Alternatively, the adhesive coated carrier wafer carrier layer can be bonded to the RL coated wafer. The wafer can then be detached by mechanical use of the blade. After initiation by the blade, the bond breaks as the two substrates are pushed away from each other and a room temperature detachment is achieved.

Processing thin wafers on wafers or tapes in existing wafer support system technology During this time, RL is usually easily dissolved by an organic solvent such as propylene glycol monomethyl ether acetate (PGMEA), acetone, mesitylene, butyl acetate, methyl ethyl ketone (MEK), combinations thereof or the like. While this property is highly desirable for easy removal of the RL after detachment, it is also highly undesirable because when the RL is exposed around the edges, this property will be exposed when exposed to chemicals in the TSV manufacturing process. Layering, undesired wafer detachment, separation of the film, and/or damage during post-bonding procedures (eg, procedures that occur after the wafer system has been bonded). This is generally because of RL Cannot occur with the chemically resistant solvent-free polyoxo-AL. Therefore, it is desirable to design wafers to prevent RL exposure around the edge of the wafer, thereby increasing the common solvent used in the fabrication of vertical interconnects for wafer pairs for 2.5D/3D IC integration. Or other chemicals such as, for example, the chemical resistance of acids, bases, or combinations thereof.

The present disclosure is generally directed to materials and methods for processing wafers used in the production of semiconductor products. More specifically, the present disclosure relates to a temporary bonded wafer system having a release layer, and a method of using the same, wherein the release layer is protected from dissolution in a solvent during processing. The temporary bonded wafer system can be used in a variety of applications including 3D wafer integration, semiconductor component packaging applications, power semiconductor components, RFID tags, wafer cards, high density memory components, light emitting diodes (LEDs), microelectronic components And similar.

10‧‧‧Transient bonding wafer system

12‧‧‧Component Wafer (DW)

14‧‧‧ Release layer (RL)

16‧‧‧Binder layer (AL)

18‧‧‧ Carrier Wafer (CW)

101‧‧‧Component Wafer (DW)

102‧‧‧ Release Layer (RL)

104‧‧‧Binder layer (AL)

106‧‧‧ Carrier Wafer (CW)

201‧‧‧Component Wafer (DW)

202‧‧‧First release layer (RL1)

204‧‧‧Binder layer (AL)

206‧‧‧ Carrier Wafer (CW)

208‧‧‧Second release layer (RL2)

210‧‧‧Transient bonding wafer system

212‧‧‧ front side

214‧‧‧ front side

270‧‧‧Binder layer (AL)

272‧‧‧second wafer

274‧‧‧First wafer

276‧‧‧ Release Layer (RL)

Various advantages of the present invention will become apparent after reading the embodiments of the appended claims.

1 illustrates an example of a prior art bonded wafer system in accordance with the prior art of the prior art.

2a-2d illustrate a method of forming a temporary bonded wafer system in accordance with one embodiment of the present invention.

3a-3e illustrate a method of forming a temporary bonded wafer system in accordance with another embodiment of the present invention.

4a through 4d illustrate a method of forming a temporary bonded wafer system in accordance with yet another embodiment of the present invention.

Although the invention is susceptible to various modifications and alternatives, specific embodiments have The present invention is shown by way of example in the drawings, and is not intended to

The present disclosure generally provides a method of temporarily bonding a wafer system and processing a temporary bonded wafer system for use in the production of semiconductor components. More specifically, the present disclosure relates to a temporary bonded wafer system having an adhesive layer that forms an effective seal on the release layer, thereby protecting the release layer from dissolution in the solvent during processing.

1 shows a prior art bonded wafer system 10 in accordance with the prior art of the prior art. The temporary bonded wafer system 10 as shown in FIG. 1 comprises (1) an active device wafer (DW) 12, (2) a release layer (RL) 14, and (3) coated on the RL 14 to form an adhesive layer. (AL) 16 temporary bonding adhesive (TBA), and (4) carrier wafer (CW) 18. As can be seen in FIG. 1, the RL is exposed to the edge of the temporary bonded wafer system 10. As a result, the RL is dissolved by solvents and/or other chemicals used during post-bonding processing activities after wafer thinning. The post-bonding processing steps performed after wafer thinning include one or more of back grinding, photolithography, metal deposition, plating, passivation, combinations thereof, and the like. The leading edge bead removal procedure is generally not feasible because the AL may be permanently engaged with the DW and CW. In fact, such prior art is further subject to damage when using edge trimmed wafers, where the AL and RL are even further exposed after subjecting the temporary bonded wafer system to one or more backgrinding procedures, as components The wafer becomes smaller than the carrier wafer.

In accordance with an embodiment of the present invention, a temporary bonded wafer system includes (a) a first surface on a first substrate or semiconductor wafer (eg, a component wafer (DW)) (ie, relative to a system in use) a release layer (RL) on the front side; (b) a temporary bonding adhesive (TBA) positioned on the RL to form an adhesive layer (AL) such that the outer edge of the AL contacts the first semiconductor wafer, thereby Forming an effective seal on the RL; and (c) bonding (eg, in a vacuum) to a second semiconductor wafer (eg, a carrier wafer (CW)) of the AL. The wafer system can be baked/cured inside or outside the bonding chamber, making it possible to detach from the wafer system. If baking is performed outside the bonding chamber, a heating plate or a heating furnace can be used. It is desirable to keep the system in a horizontal position during the baking process. Such a structure is illustrated, for example, in Figures 2d, 3e, and 4d. AL may include solvent-free polyoxymethylene, solvent-free polyimine, and/or other solvent-free coatings that provide the desired chemical resistance. The word "solvent" as used in the term "solvent free" refers to an organic solvent or a mixture of two or more organic solvents. Such "solvent free" (eg, solvent free) AL, solvent free polyoxo, solvent free polyimine polyoxyxides, and other solventless coatings are independently lacking organic solvents (ie, free of organic solvents), or A solvent concentration level that is sufficiently low is included so that the solvent does not mix with the RL and/or dissolves the RL. In some embodiments, the solvent-free AL, solvent-free polyoxymethylene, solvent-free polyimide, polyoxane, and other solvent-free coatings lack, ie, do not contain, an organic solvent. An organic solvent that lacks or is at a sufficiently low concentration level can be one or more organic solvents used in the post-processing step. For example, the organic solvent may be a glycol monoether monoester and a derivative thereof; an alcohol; a tetraalkylammonium hydroxide; a ketone; an aromatic hydrocarbon; a carboxylate; a carboamide; an indoleamine; or both or more The combination. The diol monoether monoester may be ethylene glycol monomethyl propionate, propylene glycol monomethyl ether acetate (PGMEA; CH ₃ OCH ₂ CH(CH ₃ )OC(O)CH ₃ ), or the like. The alcohol can be ethanol, 2-propanol (IPA), butanol, or the like. The tetraammonium hydroxide can be tetramethylammonium hydroxide (TMAH). The ketone may be acetone, methyl ethyl ketone (MEK), or the like. The aromatic hydrocarbon can be toluene, xylene, mesitylene, or the like. The carboxylic acid ester may be ethyl propionate, butyl acetate, or the like. Carboxyguanamine can be N,N-dimethylacetamide. The indoleamine can be N-methyl-2-pyrrolidone (NMP). The combination of two or more organic solvents may be PGMEA and MEK, PGMEA and butyl acetate, IPA and acetone, xylene, mesitylene and butyl acetate, and the like. The organic solvent may contain water or alternatively may not contain water. For example, the aqueous organic solvent can be IPA/water and TMAH/water. It is conceivable that a polyhydrazine fluid which does not dissolve RL, such as a PDMS fluid, hexamethyldioxane, and/or octamethyltetraoxane (alternatively, hexamethyldioxane and The octamethyltetraoxane is added to the AL, and the resulting AL containing the same may still be "solvent free" because it lacks an organic solvent or an organic solvent containing at most a sufficiently low solvent concentration level. As used herein, the term "organic solvent" refers to a liquid composed of a carbon atom and at least one or more atoms selected from the group consisting of hydrogen, oxygen, halogen, nitrogen, and sulfur; Alternatively, hydrogen, oxygen, halogen, and nitrogen; alternatively, hydrogen, oxygen, and halogen; alternatively, hydrogen, nitrogen, and oxygen; alternatively, hydrogen and nitrogen; alternatively, hydrogen and oxygen . The organic solvent may be composed of any of the foregoing embodiments of the atom and has a molecular weight of from 40 to 500 (g/mol) per mole, alternatively from 50 to 400 g/mol. An effective seal can generally be chemically resistant, such as evidence that the structure is tolerant to a solvent bath of about 30 minutes without delamination. (Before or after wafer detachment) stratification can be detected using the naked eye, or using a metrology tool such as a C-mode acoustic acoustic microscope or interference. In other aspects, when the adhesive layer comprises a polyoxyl oxide containing a solvent, the method further comprises: soft baking the second substrate coated with the adhesive layer to make the adhesive layer and the release layer and the first substrate The solvent is removed from the adhesive layer prior to or after multiple side contacts. As used herein, "soft roast" refers to mild heating to volatilize the solvent. When the solvent-containing adhesive is soft baked, it may also become slightly cured to slightly increase the viscosity of the material without causing the material to cure to the extent that it reduces its bonding function. When the bonding material is too soft for use in subsequent steps of the process, it may be desirable to slightly increase the viscosity of the bonding material. For similar reasons, the release layer material, which may contain solvent, may be soft baked to remove solvent therefrom before the release layer is contacted with the binder layer. "Baked" means curing the adhesive layer.

The temporary bonded wafer system and the components described herein can have any The right size. In one non-limiting example, each of DW and CW can have a thickness of about 750 μm, RL can have a thickness of about 0.2 μm, and AL can have a thickness of about 20 to 150 μm.

AL protects RL from post-processing solvents, otherwise post-processing solvents will dissolve Solving RL, for example, AL protects the RL from the organic solvents and other chemicals used in the post-bonding processing steps, such as acids and bases ("post-processing solvents"), especially those organic solvents that would otherwise dissolve RL. Examples of such acids are HF/HNO3 and examples of such bases are potassium hydroxide and tetramethylammonium hydroxide, which can be used as a cerium etchant in a post-bonding processing step. The TBA of AL provides a temporary bond between the DW and CW coated with RL to form a temporary bonded wafer system. Temporary joints are those in which the material does not remain on the final element and thus the joint is only temporary. Temporary bonding can assist in performing post-bonding steps to create thin substrates and add functionality (eg, passivation, redistribution, etc.). The temporary bonding material can be chemically removed if not removed during the detachment step. For example, the RL remaining on the DW can be dissolved with a solvent, such as an organic solvent used as a cleaning solvent in the post-processing step, while the AL can be chemically removed from the CW in a batch procedure (eg, a wet bench).

In another embodiment of the present disclosure, the temporary bonded wafer system can include two One (or more) RL. As shown in FIG. 3e, the temporary bonded wafer system 210 includes (a) a component wafer (DW) 201, (b) a first release layer (RL1) 202 applied to the DW 201, and (c) a carrier wafer. (CW) 206, (d) a second release layer (RL2) 208 applied to CW 206, and (e) a temporary bond bond forming an adhesive layer (AL) 204 between RL1 202 and RL2 208 Agent (TBA). In the embodiment of Figure 3e, the outer edge of the AL 204 contacts the front side 212 of the DW 201 and the front side 214 of the CW 206, thereby forming an effective seal on the RL1 202 and a second effective seal on the RL2 208. Such a RL1 202 and RL2 208 are generally protected from dissolution by post-processing solvents that would otherwise dissolve RL1 202 and RL2 208, for example, RL1 202 and RL2 208 are substantially protected against post-processing of organic solvents, particularly such The organic solvent of RL1 202 and/or RL2 208 will be dissolved. After the bonding step, the wafer system can be baked/cured.

In the embodiments described herein, AL is in a substantially wet state. As a result, When CW and DW are stacked, the AL may be displaced due to, for example, the weight of the wafer.

In the embodiments described herein, applying RL to DW and/or CW can result This is accomplished by any suitable technique, including conventional techniques such as spin coating, spray coating, other suitable coating techniques, and combinations thereof. Likewise, the AL can be applied using any suitable technique, including conventional techniques such as spin coating, spray coating, other suitable coating techniques, and combinations thereof.

The temporary bonded wafer system described herein has improved post-processing steps The nature. This makes the temporary bonded wafer system of the present invention desirable for its end use in applications such as, but not limited to, 2.5D and 3D wafer integration, semiconductor component packaging applications, power semiconductor components, radio frequency identification tags , wafer cards, high-density memory components, LEDs, microelectronic components.

Component wafer

The DW may include various components that have not been cut and packaged, for example, in a plastic package such as an epoxy molding compound, such as a microprocessor, a memory, a power source, and the like. An interposer can be used to bridge two different components, such as a PCB and a die having dimensions that are not otherwise matched. The active device wafers of the embodiments described herein may comprise germanium, glass, sapphire, SiC, metal wafer or metal plate, GaN or Si, GaAs, any wafer containing group III to V elements, or any other type Active wafer.

Carrier wafer

The CW is a support structure for assisting in the operation of a thin substrate temporarily bonded to the CW. Such a thin substrate cannot be additionally operated, for example, by an automated device. CW generally does not include any components and is different from the interposer, which does not include any support structure. The carrier wafer of the embodiments described herein may comprise germanium, glass, sapphire, SiC, metal wafer or metal plate, GaN or Si, GaAs, any wafer containing Group III to V elements, or any other type Carrier wafer. The length and width of the CW are typically the same or substantially the same as the length and width of the DW.

Release layer

The RL of the embodiments described herein may be selected, for example, from a polyoxyxene resin or an organic polymer-based resin, wherein the RL is capable of withstanding exposure to temperatures of about 280 ° C and above 280 ° C. The RL may include a neat resin, a solvent, and an optional additive for, for example, reducing surface tension or promoting adhesion. The RL is typically removed or dissolved using suitable remover or dissolution techniques including, but not limited to, the use of one or more solvents (cleaning solvents), the use of plasma etching procedures well known in the art, and the like. The solvent used may be one or more of the previously described organic solvents, and may include, for example, methyl ethyl ketone (MEK), propylene glycol monomethyl ether acetate (PGMEA), butyl acetate, toluene, xylene, and the like. Toluene, or the like. The RL may be completely dissolved or a combination of washing steps may be applied to remove the RL from the DW. The polyoxyxene resin and/or the organic polymer type resin may be solventless. When the polyoxyxene resin is used in any of the first RL or the second RL, the polyoxyxylene resin is a polymer containing SiO, and the sterol (SiOH%) content ranges from more than 0 to about 30%, wherein the poly The oxime resin contains a structural unit selected from the group consisting of -(R ₁ R ₂ R ₃ SiO _1/2 )-(M), -(R ₄ R ₅ SiO _2/2 )-(D), -(R ₆ SiO _3/2 )-(T), or -(SiO ₂ )-(Q).

Temporary bonding adhesive layer

The temporary bond adhesive (TBA) composition of the temporary bonded wafer system described herein can be a polyoxynene thermoset. In particular, when TBA is applied directly to the RL, the TBA compositions described herein are generally solvent free (eg, solvent free polyoxo) as previously described. More specifically, the TBA composition can be or can include, for example, a vinyl functionalized oligomeric resin, a Si-H functional oligomeric resin, an alkenyl functional filler, and/or a metal catalyst. In one embodiment, the TBA comprises a vinyl PDMS fluid, a vinyl MQ resin, and a SiH X linker. When TBA is applied to the CW, the TBA may initially include a solvent and may be baked to substantially remove the solvent therefrom, while a solventless TBA is obtained prior to bonding the RL on the DW. TBAs typically have very good shelf life (eg, they can be stored in a refrigerator or freezer for about four months or more) and are fast when heated at elevated temperatures (eg, at about 150 ° C) (eg, in Curing to form a crosslinked network from about 2 to about 5 minutes. Cured thermoset coatings are generally no longer soluble in organic solvents (organic solvent resistance) and/or other chemicals and mixtures. Furthermore, due to the surface condensate of the low surface energy dimethyl decane (-SiMe ₂ ) group, the cured coating comprises a hydrophobic surface which provides a barrier layer that avoids attack by aqueous solutions of various acids or bases.

Wafer processing

At least one wafer processing operation (eg, wafer thinning, wet Si etching, dry Si etching, etc.) can be performed on the bonded DW and CW to form a processed wafer system. For example, the DW can be thinned to the thickness required for a particular end use.

Out of process

Once the DW is processed into a very thin wafer (eg, about 10 μm to 150 μm, or about 50 μm), additional processes (such as TSV exposure) can be performed on the processed wafer system. To complete the 3D TSV temporary bonding procedure, the TBA should be mechanically detachable at room temperature (RT) and should not require any additional processing (such as laser or UV treatment) that may reduce the throughput of the program. The systems and methods described herein are advantageous because they facilitate 3D TSV temporary bonding applications at room temperature without special handling. Other suitable detachment techniques can also be used. The wafer pairs can then be laminated on the film/tape on the frame so that the thinned DW can be further disposed of after detachment.

The wafer pairs of the laminated film can also be detached by mechanical initiation of the blade or by other mechanical means (eg, clamping and pulling the CW away from the DW). In some embodiments, RT mechanical detachment can be used. In embodiments including a two-layer system, the RL may remain on the DW after detachment on the tape, which is generally compatible with the cleaning solvent, and depending on the application, may be followed by one or more solvents or possibly by electricity The pulp removes it. After separation, the AL (eg, polyoxynitride layer) typically remains on the CW and may require chemical treatment to remove.

In some embodiments, including a three-layer system, a solvent or tape can be used to strip the AL from the DW or CW after the RT mechanical detachment. The chemically treated RL, which is compatible with the solvent or plasma or any other material present on the DW, is suitably removed as follows.

Removal/cleaning procedure

The RL coated on the DW and/or CW can be removed or dissolved with one or more solvents. The solvent can be any solvent that is capable of dissolving the RL or any residue thereof and generally does not dissolve the AL. Suitable representative solvents include, but are not limited to, organic solvents as previously described, such as MEK, PGMEA, butyl acetate, toluene, xylene, mesitylene, any combination thereof, or the like. In one example, when the DW is placed on the spin coater chuck, the RL can be removed by manually pressing out the solvent using a spray bottle. Special tools can also be used where, as in fully automated mode, the solvent is dispensed onto the wafer. Depending on the design of the visual component, this procedure is repeated one or more times for optimal cleaning performance. In some embodiments, the solvent is sprayed onto the processed wafer, or the processed wafer is immersed in an organic solvent. Any solvent or combination thereof may be used to clean the processed wafer as long as the solvent is capable of dissolving each RL or any residue thereof. The solvent can be selected according to the material of the RL. In a three-layer system, this may eliminate the need for a polyfluorene remover, which is typically made of irritating chemicals, such as a mixture comprising H ₂ SO ₄ or based on tetramethylammonium hydroxide. (TMAH) etchant.

Further process

To manipulate and use the processed wafer prior to being detached and cleaned, the backside surface of the processed DW can be laminated or temporarily bonded to the dicing tape. The backside surface of the processed wafer is defined as the side of the wafer that is not in contact with either the RL or TBA/AL. Lamination or bonding to the dicing tape can be performed prior to exposing the processed wafer system to the detachment and cleaning steps.

Multi-layer combinations that differ from the temporary bonded wafer systems specifically described herein can also be used with embodiments of the present invention. For example, some of the wafers in the stack may be coated with an underfill or other non-conductive film to create a permanent bond, while other wafers in the same stack may be coated with one or more TBAs.

method

In accordance with one method of the present disclosure, a method of forming a structure including a semiconductor wafer includes: (a) applying RL to a first surface (ie, a front side) on a semiconductor wafer (eg, a component wafer); (b) a semiconductor The back side and/or the side (eg, the bevel) of the wafer DW removes a portion of the RL; (c) applies the AL to the RL such that the RL is coated therewith and causes the AL to contact one or more of the semiconductor wafers And (d) contacting the first surface of the carrier wafer with the AL to form the structure. After the bonding step, the wafer system can be baked/cured.

As shown in Figure 2a, for example, common techniques can be used including, but not limited to, RL 102 is applied to DW 101 by spin coating, spray coating, other suitable coating techniques, combinations thereof, or the like. For example, the RL 102 can be spin coated with an open cup to obtain a good quality film, so turbulent flow can occur at the edge of the wafer of the spin-on cup, causing material to deposit on the back side of the DW 101 and/or the sides of the back and front sides of the bridge. The RL coated DW 101 can be prebaked at temperatures below about 285 ° C to ensure that the solvent is removed prior to application of the AL. The baking temperature is usually based on the boiling point of the solvent. For example, the baking temperature can be about 5 ° C higher than the boiling point of the solvent used. In one embodiment, the temperature is in the range of from about 70 °C to about 180 °C. Alternatively, a temperature range of from about 80 °C to about 150 °C can be used. Alternatively, a temperature range of from about 130 ° C to about 150 ° C can be applied to the hot plate for about 1 minute. All or substantially all of the solvent at the RL can be removed using any suitable temperature/time.

Backside Edge Bead Removal (BEBR) procedure (also known as backside rinsing (BSR)) This may be done after the RL 102 is applied to the DW 101 to remove the desired portion of the RL 102, which is shown in Figure 2b according to the results of an example. Solvents can be used, such as the organic solvents previously described, including, but not limited to, toluene, xylene, mesitylene, PGMEA, butyl acetate, methyl ethyl ketone (MEK), combinations thereof, or the like. BEBR typically involves dispensing a solvent on the backside edge of the wafer while rotating the wafer to clean the back side. In some embodiments, the wafer is placed on a chuck having a diameter that is substantially smaller than the diameter of the wafer. By controlling the spin speed, time, and/or other variables during the BEBR procedure, the solvent can attempt to spread onto the front side of the wafer and dissolve a minimum amount of RL around the edges. Centrifugal forces push the solvent to the edge of the wafer on the back side. The fluid dynamics by controlling the spin speed and affecting the strength of the centrifugal force are also controlled, and the solvent is allowed to be oriented along the edge of the wafer. The front side spreads. The solvent typically does not dissolve the RL on the front side of the DW because removal of excess RL on the DW can result in gel residue when the DW edge is untrimmed. If the DW edge is trimmed, the RL can be removed from the edge trimming area on the front side of the DW. The resulting RL 102 is shown in Figures 2b to 2d. With the BEBR program, the RL portion on the back side and side of the DW 101 is removed as part of the coating procedure.

In one embodiment, a BEBR program is used, which can include spin coating a solvent Opposite the second surface (ie, the back side) of the first surface of the DW. Non-limiting examples of solvents that can be used include organic solvents as previously described, such as butyl acetate, PGMEA, combinations thereof, and the like. The spin coating speed and duration of the BEBR (at least in part) depends on the equipment (eg, the type of spin coater) and the wafer size used for the device. In some embodiments, the spin speed should be lower than the nominal spin speed to fix the thickness of the coating. Spin coating of BEBR, for example, can be carried out at a spin coating speed of from about 800 rpm to about 2500 rpm for from about 3 seconds to about 60 seconds. In an example using a Suss Microtec (Suss Microtec, AG, Germany) spin coater, a spin speed of about 800 rpm achieves a good BEBR over about 9 seconds, and for a wafer having a size of about 300 mm, about 400 rpm. The spin speed was failed. In another example using an EVG spin coater (Suss Microtec), a spin rate of about 2500 rpm achieved a good BEBR on a 100 mm wafer having a primary plane and a primary plane over about 3 seconds. The BEBR step is followed by a drying step using substantially the same speed and duration.

The position and/or shape of the BEBR needle/dispenser of the spin coater is also available in the BEBR process. The preface plays an important role. For example, when a 200 mm coater is used on a 100 mm wafer, there is a free area generally found to be a solid mass between the edge of the spinner cup and the edge of the wafer, which creates more turbulence. To reduce turbulence, place the needle dispenser of the applicator closer to the edge of the wafer.

The removed portion of the RL material can come from one or more sides of the DW 101 such that The sides of the edge-trimmed DW 101 are exposed. The AL 104 applied to the RL 102 on the first surface (ie, the front side) of the edge-trimmed DW 101 can contact the exposed side of the DW 101 to form an effective seal on the RL 102, as shown in Figure 2c.

The development of the backside EBR program includes three main functions. First, in an embodiment in which the RL is spin coated using an open cup method, RL is wrapped around the back side of the wafer, thereby contaminating the back side of the wafer. Therefore, the back side of the wafer is cleaned to avoid contamination of the bond chamber and the heater plate during the baking process, the bonding process, and the post-bonding process. Second, the RL is cleaned from the side of the wafer to create an area free of RL. The bevel/side cleaning of the wafer can be performed during the same procedure as cleaning the back side. Third, the wafer back side needs to be dried before moving the wafer to the heating plate for the RL baking process.

A TBA is applied on top of one of the coated RL, edge-trimmed DW 101 to form AL 104. To prevent or substantially reduce the mixing of RL 102 with AL 104, AL 104 is generally solvent free when applied directly to RL 102. For example, AL 104 can include a solvent free polyoxo. The AL 104 can be applied by spin coating, spraying, using another suitable coating technique, combinations thereof, or the like. In one embodiment, the TBA of the AL 104 is spin coated onto the RL 102 using, for example, a closed cup, as long as there is no or substantially no deposition of AL material on the back side of the component wafer 101.

It is also possible to apply AL using an open cup. The use of an open cup may require BEBR of AL such that AL is not deposited on the side and/or back side of the wafer. In the embodiment where AL is solvent free (e.g., applied on RL), the main difference between the use of BEBR for RL and the use of BEBR for AL is that the solvent in the RL gradually evaporates during spin coating thereby immobilizing the RL. On the other hand, the solvent-free AL generally continues to flow, and since the thickness is not fixed, the AL will be further reduced, which allows the AL to properly coat the RL. The AL will also be pushed back by the BEBR so that no (or substantially no) AL enters the back side of the wafer.

The layers are then temporarily joined together under vacuum to form a temporary bond Wafer system. The temporary bonded wafer system is then cured. Curing can be by any suitable technique for curing the TBA at a temperature, including, but not limited to, thermal curing (e.g., by using a vacuum furnace at a predetermined reduced pressure and temperature rating), conventional oven or heated plate. Therefore, an effective seal is formed on the RL 103.

Selectively remove RL 102 from the side of DW 101 by using the BEBR program As part of it, the AL 104 is able to contact the DW 101. As such, the AL 104 seals the RL 102 and acts as a barrier for the RL 102 to shield it from chemicals (eg, process chemicals and cleaning chemicals) used during the post-bonding process of the thin wafer. For example, photoresist, which helps prevent delamination. The BEBR program is usually robust enough to leave no or substantially no residue left. The effective seal formed by AL 104 is generally chemically resistant during the post joining process.

The first surface (ie, the front side) of the CW 106 can then be joined to the AL 104. Can The CW 106 and AL 104 are joined in a vacuum at about room temperature or above and then cured underneath the wafer on a hot plate (eg, in a vacuum) under a predetermined reduced pressure.

In another embodiment illustrated in Figures 4a through 4d, a structure is formed (including The method of semiconductors includes: (a) applying RL 276 to a first surface (ie, a front side) of the first semiconductor wafer 274 (see FIG. 4a); (b) selectively removing RL from the first semiconductor wafer 274 A portion of 276 such that the backside RL contamination and bevel RL coating are removed, and the first semiconductor wafer 274 has RL only on the front side (see Figure 4b); (c) AL 270 is coated (which is BSR) Or using a closed cup to achieve its shape) to the first surface of the second semiconductor wafer 272 (see FIG. 4c); and (d) contacting the AL 270 to the RL 276 of the first semiconductor wafer 274 such that the outer edge of the AL 270 The first semiconductor wafer 274 is contacted and bonded (see FIG. 4d), thereby forming the structure. In the joining step The structure can then be baked/cured. The first wafer 274 can be a DW, and the second wafer 272 can be a CW. The act of removing RL 276 from one or more sides 275 can include a BEBR procedure that can include dispensing and spin coating solvent on the back side of first semiconductor wafer 274. The action of contacting the AL 270 to the RL 276 can be performed in the junction chamber. The action of contacting AL 270 to RL 276 and one or more sides 275 of first semiconductor wafer 274 forms an effective seal on RL 276. This program is usually robust.

It is conceivable that the front edge bead removal (FEBR) and BSR can be applied to the figure. The AL 270 of the embodiment of 4a to 4d helps to prevent the AL from "squeezing" and contaminating the back side of the wafer when the AL-coated CW is bonded to the RL-coated DW. "Extrusion" is generally undesirable because it produces particles that can contaminate equipment during further processing. Since no RL is present on the CW, when the FEBR and BSR of the AL are applied, it is not necessary to select a solvent specific to the RL material. As a result, more potential solvents are available. During the FEBR and BSR of the AL, some ALs are removed not only from the back side of the CW but also from the front side edge of the CW. The extent of the amount of AL removed from the front side of the CW, for example, may range from about 0.1 mm to about 2 mm, and depends on various factors such as the thickness of the AL, the morphology on the CW and/or on the DW, and edge trimming. size. A certain pressure can be used during the bonding procedure (after proper degassing but before bonding) to ensure that the AL is properly in contact with the RL. By doing so, the RL is protected by the AL because the AL is flowing and pushed onto the RL.

AL 270 may comprise a solvent free polyoxo or a solvent free polyimine polyoxyl. by The AL 270 is not applied to the RL, but the AL 270 of the embodiment of Figures 4a to 4d may also include a solvent. In such an embodiment, the AL-coated CW 272 is baked (eg, heated) at a temperature and duration sufficient to eliminate or substantially eliminate solvent from the AL 270 prior to contacting the AL 270 to the RL 276 and DW 274. Board or oven). Baking can be performed inside the vacuum junction chamber prior to effective bonding.

When there is basically no CW layering from DW, it is achieved as used in this article. Sealed. Another way to determine if an effective seal has been formed is to detach the wafer to check the thickness of the RL and/or whether there is any degradation of the RL. Temporarily bonded wafer pairs must withstand a solvent bath of from about 30 minutes to about 60 minutes without evidence of delamination to qualify for a good BEBR procedure that can form an effective seal. To determine if the BEBR procedure is effective such that an effective seal is formed, the wafer pair can be detached to determine if the RL has dissolved or, for example, about 1 cm outside the leading edge of the wafer has been etched away. Robust procedures that form an effective seal typically result in little to no degradation of RL.

Referring back to Figures 3a to 3e, the first surface of the CW 206 can be bonded to Prior to AL 204, a second release layer (RL2) 208 is applied to the first surface (ie, the front side) of the CW 206. AL 204 is applied to the front side of the RL2-coated CW 206 using, for example, a closed cup or an open cup (see Figure 3a). Similar to the above for DW, the BEBR program can also be performed on the CW 206 coated with RL2 (see Figure 3b). In such an embodiment, the front sides of both DW 201 and CW 206 are collected in an engagement chamber (eg, in a vacuum) to ensure effective seal/barrier protection at RL 202 and RL2 208 (see Figure 3e), followed by an engagement chamber External post-bonding cure. For post-bond curing, it may be desirable to perform outside the junction to not limit the flux of the junction chamber. In another embodiment, the material is first degassed under vacuum and the bonding is performed at or about atmospheric pressure. As shown in Figures 3c to 3d, in some embodiments in which AL is applied to the CW, the AL-coated CW 206 needs to be flipped before contacting the DW 201 such that the front side of the AL-coated CW 206 can be bonded to the DW 201 Front side.

Subsequent operations or procedures, such as, for example, grinding of wafers, may be performed as described herein. Execution on the wafer system. For example, wafer processing can include grinding DW to form a processed wafer system. Once the temporary bonded wafer system is processed into a very thin wafer, additional procedures such as, but not limited to, through via (TSV) exposure may be performed on the processed wafer system as needed.

After detachment, when thinned, the wafer processed by the laminated film can be exposed to organic A solvent, wherein the organic solvent is as previously described (eg, PGMEA, butyl acetate, MEK), which will act as a surface cleaner or as a solvent to assist in the removal of RL. The organic solvent is typically cleaned on the surface of the component wafer and/or carrier wafer on which the respective RL is applied. Any organic solvent can be used to clean the processed wafer as long as the solvent is capable of dissolving the RL. RL may or may not be completely soluble depending on the type of surface. For example, if the surface is, for example, germanium, a single layer may remain, but if the surface is, for example, a CVD nitride, all of the RL may be dissolved. Several examples of organic solvents that may be used include, but are not limited to, toluene, xylene, mesitylene, PGMEA, butyl acetate, combinations thereof, or the like.

In some but not all embodiments, the invention encompasses any of the following numbered aspects:

Aspect 1: A temporary bonded wafer system comprising: a substrate having a first surface and a second surface opposite the first surface; a release layer on the first surface of the substrate; on the release layer a layer of adhesive wherein the outer edge of the layer of adhesive contacts the substrate thereby forming an effective seal on the release layer; and a carrier wafer bonded to the adhesive layer.

Aspect 2: The system of Aspect 1, wherein the binder layer comprises solvent-free polyfluorene.

Aspect 3: The system of any of aspects 1 and 2, wherein the effective seal is generally chemically resistant.

The system of any one of aspects 1 to 3, wherein the substrate is a semiconductor Body component wafer.

Aspect 5: The system of Aspect 4, further comprising a wafer located on the carrier and A second release layer between the layers of adhesive, the adhesive layer forming a second effective seal on the second release layer.

Aspect 6: A method of forming a temporary bonded wafer system, the system comprising a substrate comprising a first surface, a second surface, and one or more sides, the method comprising: applying a release layer material to the first surface of the substrate; removing a portion of the release layer material from the substrate One or more side removals; applying a layer of adhesive to the release layer such that the release layer is coated with an adhesive layer and the edges of the adhesive layer are in contact with one or more sides of the substrate, whereby the release layer material Forming a generally chemically resistant seal; contacting a first surface of the carrier wafer with the adhesive layer to form the system; and curing the system.

Aspect 7: The method of Aspect 6, wherein the binder layer comprises a solventless poly oxygen.

Aspect 8: The method of any one of Aspects 6 and 7, wherein the release layer is applied Materials include spin coating or spray coating.

The method of any one of aspects 6 to 8, further comprising Before the first surface of the wafer contacts the adhesive layer, a second release layer is applied to the first surface of the carrier wafer, the adhesive layer forming a second effective seal on the second release layer.

Aspect 10: The method of any one of Aspects 6 to 9, wherein the release layer is removed A portion of the material includes a backside edge bead removal procedure.

Aspect 11: The method of Aspect 10, wherein the backside edge bead removal process The sequence includes spin coating and dispensing a solvent on the second surface of the substrate.

Aspect 12: The method of Aspect 11, wherein the solvent comprises methyl ethyl ketone, propylene glycol monomethyl ether acetate, butyl acetate, toluene, xylene, mesitylene, or any combination thereof.

Aspect 13: The method of Aspect 11, wherein the spin coating is performed at a rate of from about 100 rpm to about 2500 rpm for from about 5 seconds to about 60 seconds.

The method of any one of aspects 6 to 13, wherein the substrate is a component wafer.

Aspect 15: A method of forming a temporary bonded wafer system, the system comprising a first substrate and a second substrate, each of the first and second substrates comprising a first surface, a second surface, and one or more sides, The method includes: applying a release layer material to the first surface of the first substrate; selectively removing the release layer material from one or more sides of the first surface of the first substrate such that the first substrate Or a plurality of sides are exposed; applying a layer of adhesive to the first surface of the second substrate; contacting the layer of the adhesive with the release layer material and one or more sides of the first substrate such that the bond is formed, thereby forming the bond System; and curing the system.

Aspect 16: The method of aspect 15, wherein the first substrate is a component wafer and the second substrate is a carrier wafer.

The method of any one of aspects 15 and 16, wherein contacting the adhesive layer with the release layer material is performed in a bonding chamber.

The method of any one of aspects 15 to 17, wherein the binder layer comprises polyoxyalkylene.

The method of any one of aspects 15 to 18, further comprising baking the second substrate coated with the adhesive layer to cause the adhesive layer and the release layer material and the first base The solvent is removed from the adhesive layer prior to contact of one or more sides of the panel.

The method of any one of aspects 15 to 19, wherein the bonding is performed The agent layer contacts the release layer material and one or more sides of the first surface of the first substrate form a generally chemically resistant seal on the release layer material.

Aspect 21: The method of any one of aspects 15 to 20, wherein the release type is removed The layer material includes a backside edge bead removal procedure.

Aspect 22: The method of aspect 21, wherein the back side edge bead removal process The sequence includes dispensing and spin coating the solvent on the outer edge of the second surface of the first substrate.

Aspect 23: The method of any of aspects 15 to 22, further comprising Applying a second release layer material to the first surface of the second substrate and selectively separating the second release layer material from the second substrate prior to contacting the adhesive layer onto the first surface of the second substrate One or more sides of the first surface are removed such that one or more sides of the second substrate are exposed.

Aspect 24: The method of any one of aspects 15 to 22, wherein The act of removing the release layer material includes dissolving a portion of the release layer material in one or more solvents that typically do not dissolve the adhesive layer.

Aspect 25: The method of aspect 24, wherein the one or more solvents comprise a methyl group Ethyl ketone, propylene glycol monomethyl ether acetate, butyl acetate, toluene, xylene, mesitylene, or any combination thereof.

In other but not all embodiments, the invention includes the following numbered embodiments Any of them.

Specific Example 1. A temporary bonded wafer system comprising: having a first table a substrate having a face and a second surface opposite the first surface; a release on the first surface of the substrate a layer of adhesive on the release layer, wherein the outer edge of the layer of adhesive contacts the substrate thereby forming an effective seal on the release layer; and a carrier wafer bonded to the adhesive layer.

Specific Example 2. The system of Embodiment 1, wherein the binder layer comprises solvent-free polyfluorene oxide.

Specific Example 3. The system of Embodiment 1 or 2 wherein the effective seal is generally chemically resistant.

The system of any one of embodiments 1 to 3, wherein the substrate is a semiconductor element wafer.

The system of embodiment 4, further comprising a second release layer between the carrier wafer and the adhesive layer, the adhesive layer forming a second effective seal on the second release layer.

Specific Example 6. A method of forming a temporary bonded wafer system, the system comprising a first substrate, a release layer, a binder layer, and a second substrate, the first and second substrates each independently including a first surface, a second a surface, and one or more sides, the method comprising: applying a release layer material to the first surface and one or more sides of the first substrate such that the release layer material covers the first surface and at least partially covers One or more sides of the first substrate; removing a portion of the release layer material from one or more sides of the first substrate without removing a portion of the release layer material covering the first surface of the first substrate for exposure ( Uncovering the one or more sides and providing a release layer on the first surface of the first substrate rather than on one or more sides of the first substrate, and when the release layer material contains a solvent, Removing the solvent from the release layer; applying a layer of adhesive to the release layer and to one or more sides of the exposed first substrate such that the release layer is coated with a layer of adhesive and the edges of the adhesive layer One or more sides of the first substrate are in contact, thereby General chemical resistance on the release layer a first sealing surface of the second substrate contacting the adhesive layer under vacuum to form an uncured system; and curing the uncured system to provide a temporary bonding wafer as in any of embodiments 1 to 4. System; wherein the contacting step is performed after the applying step.

The method of the specific example 6, wherein the binder layer comprises no dissolution The agent is concentrated in oxygen.

The method of the specific example 6 or 7, wherein the second substrate is loaded Wafer, and the method further comprises applying a second release layer on the first surface of the carrier wafer, removing the solvent from the adhesive layer, and then contacting the second release layer with the adhesive layer, The adhesive layer forms a second effective seal on the second release layer.

The method of any of embodiments 6 to 8, wherein removing a portion of the release layer material comprises a backside edge bead removal procedure.

The method of embodiment 9, wherein the backside edge bead removal procedure comprises spin coating and dispensing a solvent on the second surface of the substrate.

Specific Example 11. The method of Embodiment 10, wherein the solvent comprises a glycol monoether monoester and a derivative thereof; an alcohol; a ketone; an aromatic hydrocarbon; a carboxylate; a carboamide; an indoleamine; or both or A combination of many.

The method of Embodiment 11, wherein the solvent comprises methyl ethyl ketone, propylene glycol monomethyl ether acetate, butyl acetate, toluene, xylene, mesitylene, or any combination thereof.

The system of any of embodiments 6 to 12, wherein the first substrate is a component wafer.

The method of any one of the embodiments 6 to 13, wherein the method is The mixture layer is in contact with the release layer in a vacuum in the junction chamber.

Specific Example 15. The method of any of Embodiments 6 to 14, wherein the bonding is performed Before contacting the agent layer on the first surface of the second substrate, further comprising coating the second release layer material onto the first surface of the second substrate to cover the first surface with the second release layer material and at least partially covering One or more sides of the second substrate and selectively removing the second release layer material from one or more sides of the first surface of the second substrate without removing the first surface covering the second substrate a portion of the two release layer material such that one or more sides of the second substrate are exposed (ie, uncovered) and the second release layer is tied to the first surface of the second substrate rather than being positioned on the second substrate One or more sides.

The method of any one of the embodiments 6 to 15, wherein the method The step of materially removing the release layer material includes dissolving a portion of the release layer material in one or more solvents that typically do not dissolve the adhesive layer.

The method of embodiment 16, wherein the one or more solvent packs Methyl ethyl ketone, propylene glycol monomethyl ether acetate, butyl acetate, toluene, xylene, mesitylene, or any combination thereof.

Example

The examples are intended to be illustrative of the invention, and are not intended to limit the scope of the invention as set forth in the appended claims.

Example 1 - Blank Wafer Testing Chemical resistance of AL

The chemical resistance of AL described herein is applied to two different solvent-free ALs (including polydimethyl siloxane materials having a viscosity of about 5,000 cP) to a blank twin by using a spin coater. It was rounded and allowed to cure on a hot plate at a temperature of about 150 ° C for about 2 minutes. Wafer weight measurements were taken prior to coating, after coating, and after exposure to a solvent such as an organic solvent, acid, or base as described above for the chemical. AL provides chemical resistance to the solvents, acids and bases used in the post-bonding procedure. The measurement is due to the weight change caused by the exposure of the typical chemicals used in the post-processing steps after wafer thinning, showing which chemicals are the most stringent and solvent-free for solvent-free poly-xylene adhesives. Effectively chemically seal the wafer for temporary bonding. Tables 1a and 1b show experimental data on the chemical resistance of AL.

HAc is acetic acid.

Chemical resistance of RL

The chemical resistance of the RL described herein was tested by coating a blank wafer with RL under nominal spin coating conditions. Low spin speeds typically result in thicker layers, while high spin speeds typically result in thinner layers. The thickness of the layer also depends on the solids content of the RL formulation.

The coated wafer is then cured at about 150 ° C for about 1 minute to drive off all residual solvent from the film coating. The evidence that the wafer was then exposed to several chemicals and failed or passed the solvent/chemical resistance test was noted based on RL discoloration or removal on the wafer surface. Table 2 shows the solvent list and the resistance of RL to each solvent.

During the next step of the evaluation, AL was coated on the coated RL wafer to demonstrate the failure of the existing two-layer wafer bonding method (without utilizing the BEBR program). Curing the AL at about 150 ° C for about 3 minutes ensures complete cure. The PGMEA is then sprayed onto the wafer and any RL discoloration of the wafer is observed. Temporary bonding of wafers according to the prior art is clearly prone to failure due to wrinkling of the AL and/or dissolution of the RL. As such, protecting the RL would be desirable because the pure AL is resistant to chemicals.

Example 2 - Backside EBR Program Development

The program was developed on a DNS spin coater (Dainippon Screen Manufacturing Co., Japan) by design of experiment (DOE) (see Table 4) to study BEBR for use of BA as a backside rinse solvent. The most appropriate spin speed for the program. The RL material is a polyoxyxene resin, which is a polymer containing SiO having a stanol (SiH%) content ranging from more than 0 to at most about 30%, wherein the polyoxyl resin contains a structure selected from the group consisting of Unit: -(R ₁ R ₂ R ₃ SiO _1/2 )-(M), -(R ₄ R ₅ SiO _2/2 )-(D), -(R ₆ SiO _3/2 )-(T), Or -(SiO ₂ )-(Q). Table 3 shows the range of spin coating speeds for each step of the backside EBR procedure.

As shown in Table 4, the higher the BEBR spin speed for a particular configuration, the less effective the BEBR procedure is because the smallest amount of material is removed. However, as discussed above, the results (at least in part) depend on the type of spin coater used. Thus, in one embodiment in which point dispensing is employed for the backside EBR, a spin coating speed of between about 150 and about 300 rpm can be used. At least about 20 seconds. In another embodiment using a multi-point dispensing spin cup (eg, Suss MicroTec), a slightly higher spin coating speed may be used, such as from about 400 rpm to about 1000 rpm for about 8 seconds to about 20 seconds, or the spin speed may be Approximately a short amount of time from about 150 rpm to about 300 rpm. The 300 mm wafer was coated with a Suss MicroTec hardware configuration at a spin speed of about 800 rpm for about 9 seconds. The EVG spin coater is used for 100 mm wafers with primary and secondary planes for about 3 seconds at spin speeds up to about 2500 rpm.

The position of the BEBR is a factor in determining the speed and duration of spin coating, as some spin coaters are designed for a variety of wafer sizes. This causes the BEBR to occur at unequal distances from the edge of the wafer, depending on the wafer size used. Considering this unequal distance, the spin coating speed and duration can be adjusted.

Thus, depending on the BEBR capabilities of the spin coater and spin coater used, an optimal method can be implemented to allow the RL to be removed on the backside of the wafer and the edges of the outer wafer (e.g., sidewalls).

Example 3 - Thick Edge Untrimmed Temporary Bonded Wafer

The next stage is to implement the process and create a temporary bonded wafer pair that will be tested by immersing the temporarily bonded wafer pair in a different solvent that readily dissolves the RL. The soaked wafers were dried and detached using an N ₂ gun, and the thickness of RL and AL were measured using a Filmetrics optical thickness tool (Filmetrics, San Diego, California) to monitor the thickness of the RL.

The bonding experiment was completed by using the BEBR program flow for the RL coating to create a temporary joint pair and a room temperature development "drop joint" procedure. The drop bonding method causes the top wafer to be dropped on other wafers, thereby applying the force after degassing in a vacuum (about 3 mbar to about 5 mbar) on the coated AL on the other wafer using the weight of the top wafer. No external force is applied to create a seamless, non-squeezing out of temporary bonded wafer pairs. Twenty sets of temporary bonded wafer pairs were generated using the BEBR program and tested as described above. When inspecting the detached wafer (which uses a blade inserted between the wafer pairs and pushes up and pushes down to create a vertical force manual detachment), the RL is complete on the wafer, proving that the temporary bonded wafer pair is protected from Feasibility of damage caused by dissolution of RL. Table 5 shows the solvents, conditions, and results tested.

Thickness measurements done on the RL and AL off the wafer also confirmed that the RL was generally not exposed to solvent attack.

Example 4 - Thick Edge Trimmed Temporary Bonded Wafer

A temporary bonded wafer pair is then created, wherein the RL coated wafer is an edge trimmed wafer. Overriding one or more sides of the wafer by edge trimming to overcome Potential edge fragmentation and/or other wafer issues. Edge trimmed wafers have sharper edges than edge untrimmed wafers. The edge-trimmed wafer is coated with RL using the backside EBR program and then bonded to the AL coated wafer using the "drop joint" method described above. The wafer stack is then cured, and the temporary bonded wafer pair is tested again by immersing the wafer pairs in different solvents, as shown in Table 6 below. No damage was detected for typical exposure times, but when the temporary bonded wafer pair was allowed to soak in the BA solution for about 6 hours, RL dissolved, indicating that the protective seal produced by AL was not completely impervious, but capable of Accept typical process steps involving typical chemicals used in component manufacturing procedures. Table 6 shows the results of the chemical resistance tests performed on the edge-trimmed temporary bonded wafer pairs.

Thus, the temporary bonded wafer pair does not exhibit degradation or delamination because the effective chemical seal prevents or retards solvent penetration into the RL. This was confirmed by disengaging the wafer pair because no degradation was observed on the wafer with RL.

While the invention is susceptible to various modifications and alternatives The invention is not intended to be limited to the particular forms disclosed. Rather, the invention is intended to cover the invention as defined by the scope of the appended claims. All modifications, equivalents, and alternatives within the spirit and scope of the invention.

101‧‧‧Component Wafer (DW)

102‧‧‧ Release Layer (RL)

104‧‧‧Binder layer (AL)

106‧‧‧ Carrier Wafer (CW)

Claims (11)

A temporary bonded wafer system comprising: a substrate having a first surface and a second surface opposite the first surface; a release layer on the first surface of the substrate; on the release layer An adhesive layer, wherein an outer edge of the adhesive layer contacts the substrate, thereby forming an effective seal on the release layer; and a carrier wafer bonded to the adhesive layer. The system of claim 1 wherein the binder layer comprises solvent-free polyfluorene. The system of claim 1 wherein the effective seal is generally chemically resistant. The system of any one of claims 1 to 3, wherein the substrate is a semiconductor component wafer. The system of claim 4, further comprising a second release layer between the carrier wafer and the adhesive layer, the adhesive layer forming a second effective seal on the second release layer. A method of forming a temporary bonded wafer system, the system comprising a first substrate, a release layer, an adhesive layer, and a second substrate, the first and second substrates each independently including a first surface, a second surface, and One or more sides, the method comprising: applying a release layer material to the first surface of the first substrate and to one or more sides such that the release layer material covers the first surface and at least a portion Covering one or more sides of the first substrate; removing a portion of the release layer material from one or more sides of the first substrate without removing the release layer material covering the first surface of the first substrate a portion for exposing (ie, uncovering) the one or more sides and providing a release layer on the first surface of the first substrate rather than on one or more sides of the first substrate, and when When the release layer material contains a solvent, Removing the solvent from the release layer; applying a layer of adhesive to the release layer and one or more sides of the exposed first substrate such that the release layer is coated with the adhesive layer and the adhesive An edge of the layer is in contact with one or more sides of the first substrate, thereby forming a generally chemically resistant seal on the release layer; contacting the first surface of the second substrate with the adhesive layer under vacuum Forming an uncured system; and curing the uncured system to provide a temporary bonded wafer system as in claim 1; wherein the contacting step is performed after the applying step. The method of claim 6, wherein the binder layer comprises solvent-free polyfluorene. The method of claim 6, wherein the second substrate is a carrier wafer, and the method further comprises applying a second release layer on the first surface of the carrier wafer, and removing the solvent from the adhesive layer. And then contacting the second release layer with the adhesive layer, the adhesive layer forming a second effective seal on the second release layer. The method of claim 6 wherein removing a portion of the release layer material comprises a backside edge bead removal procedure, wherein the backside edge bead removal procedure comprises spin coating on the second surface of the substrate And dispensing solvents. The method of claim 9, wherein the solvent comprises a glycol monoether monoester and a derivative thereof; an alcohol; a ketone; an aromatic hydrocarbon; a carboxylic acid ester; a carboguanamine; an indoleamine; or two or more thereof Combination; or wherein the solvent comprises methyl ethyl ketone, propylene glycol monomethyl ether acetate, butyl acetate, toluene, xylene, mesitylene, or any combination thereof. The method of any one of claims 6 to 10, further comprising applying a second release layer material to the second substrate before contacting the adhesive layer on the first surface of the second substrate a first surface such that the second release layer material covers the first surface and at least partially covers one or more sides of the second substrate, and selectively from the first surface of the second substrate Removing the second release layer material from the plurality of sides but not removing the second release layer material portion covering the first surface of the second substrate such that one or more sides of the second substrate are exposed (ie, exposed And the second release layer is on the first surface of the second substrate, rather than on one or more sides of the second substrate.