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TW201433660A - Adjustable current shield for electroplating processes - Google Patents

Adjustable current shield for electroplating processes Download PDF

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Publication number
TW201433660A
TW201433660A TW102142938A TW102142938A TW201433660A TW 201433660 A TW201433660 A TW 201433660A TW 102142938 A TW102142938 A TW 102142938A TW 102142938 A TW102142938 A TW 102142938A TW 201433660 A TW201433660 A TW 201433660A
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Taiwan
Prior art keywords
anode
shield
current
adjustable current
current shield
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TW102142938A
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Chinese (zh)
Inventor
Gunther Wilhelm Sandmann
Kerstin Siury
Christian Schroiff
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Globalfoundries Us Inc
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Publication of TW201433660A publication Critical patent/TW201433660A/en

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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/008Current shielding devices
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

One illustrative plating apparatus disclosed herein includes a substrate holder that is adapted to receive a substrate, an anode and an adjustable current shield positioned between the substrate holder and the anode. In this illustrative embodiment, the adjustable current shield includes a stationary member, a moveable member that is adapted to be moved relative to the stationary member and a plurality of current shield members that are operatively coupled to either the stationary member or the moveable member, wherein each of the current shield members is rotatably pinned to either the stationary member or the moveable member and wherein each of the current shield members is adapted to rotate when there is relative movement between the moveable member and the stationary member.

Description

電鍍製程之可調整電流屏蔽 Adjustable current shield for electroplating process

一般而言,本揭示係關於精密半導體裝置的製造,更具體地說,係涉及可用於為了形成導電金屬材料所進行之電鍍製程的可調整式電流屏蔽。 In general, the present disclosure relates to the fabrication of precision semiconductor devices and, more particularly, to an adjustable current shield that can be used in electroplating processes for forming conductive metal materials.

半導體裝置的製造通常需要在半導體晶圓上形成導電體。例如,通常藉由將如銅之類的導電層電鍍(沉積)在晶圓上以及形成圖案化凹槽而在晶圓上形成導電引線。一般類型的電鍍設備有兩種:噴塗鍍覆設備(fountain plating equipment)以及垂直鍍覆設備。兩者在某些應用中都有其相對優勢。儘管兩種不同製程中待鍍覆晶圓表面的取向不同(噴塗鍍覆設備中的水平面以及垂直鍍覆設備中的垂直面),但製程作業仍非常類似。 The fabrication of semiconductor devices typically requires the formation of electrical conductors on the semiconductor wafer. For example, conductive leads are typically formed on a wafer by electroplating (depositing) a conductive layer, such as copper, onto the wafer and forming patterned grooves. There are two types of plating equipment of the general type: fountain plating equipment and vertical plating equipment. Both have their comparative advantages in some applications. Although the orientation of the surface to be plated is different in the two different processes (the horizontal plane in the spray coating equipment and the vertical surface in the vertical plating equipment), the process operation is very similar.

一般而言,電鍍包含製作與其上有例如銅之導電層待沉積之晶圓表面上所形成所謂導電性「晶種」層的電性接觸件。電流接著通過介於陽極與晶圓鍍覆表面上作用為陰極的導電性晶種層之間的鍍覆溶液(亦即,含所沉積元素之離子的溶液,例如含Cu++的溶液)。晶種層將電 鍍電流從製作電性接觸件處之晶圓邊緣帶到晶圓的中央,包括流經嵌入式結構、凹槽及貫孔。這在晶圓鍍覆表面上產生電化學反應而導致導電層的沉積。理論上,電沉積在晶種層上的最終材料層應該完全填充嵌入式結構,並且其應該在整個晶圓表面具有特定厚度輪廓。一般而言,在電鍍製程中,所沉積之金屬的厚度輪廓應該儘可能地受到控制。 In general, electroplating involves making electrical contacts of a so-called conductive "seed" layer formed on the surface of a wafer to which a conductive layer such as copper is deposited. The current is then passed through a plating solution (i.e., a solution containing ions of the deposited elements, such as a solution containing Cu ++ ) between the anode and the conductive seed layer acting as a cathode on the wafer plating surface. The seed layer carries the plating current from the edge of the wafer where the electrical contacts are made to the center of the wafer, including through the embedded structure, the grooves, and the through holes. This produces an electrochemical reaction on the wafer plating surface resulting in the deposition of a conductive layer. In theory, the final material layer electrodeposited on the seed layer should completely fill the embedded structure and it should have a specific thickness profile across the wafer surface. In general, the thickness profile of the deposited metal should be controlled as much as possible during the electroplating process.

為了最小化所沉積之材料的變異,重要的是,導電晶種層在晶圓鍍覆表面上方具有均勻的厚度。然而,即使是非常均勻的晶種層,習知電鍍製程會因相關於此等鍍覆製程的所謂「邊緣效應」而產生非均勻的沉積。一般而言,邊緣效應意指晶圓邊緣附近所沉積之導電層較厚於晶圓中央處的傾向,亦即「厚邊緣(edge-thick)」輪廓。此外,相較於晶圓邊緣區附近流動的電流,藉由減少晶圓中間區中通過晶種層的電流,得以在最終層中產生厚邊緣輪廓。亦即,由於導電晶種層係接觸於晶圓的周邊以及從晶圓邊緣朝晶圓中央流經晶種層的電流強度下降,所以相較於晶圓的邊緣區,鍍覆於晶圓中央之例如銅的導電材料較少。 In order to minimize variations in the deposited material, it is important that the conductive seed layer have a uniform thickness over the wafer plating surface. However, even with very uniform seed layers, conventional electroplating processes can result in non-uniform deposition due to the so-called "edge effect" associated with such plating processes. In general, edge effect means the tendency of a conductive layer deposited near the edge of the wafer to be thicker than the center of the wafer, that is, an "edge-thick" profile. In addition, a thick edge profile is created in the final layer by reducing the current through the seed layer in the intermediate region of the wafer compared to the current flowing near the edge region of the wafer. That is, since the conductive seed layer is in contact with the periphery of the wafer and the current intensity flowing from the edge of the wafer toward the center of the wafer through the seed layer is reduced, it is plated in the center of the wafer compared to the edge region of the wafer. There are fewer conductive materials such as copper.

此等厚邊緣層材料的形成使得後續處理更困難。例如,此等厚邊緣材料層使後續化學機械研磨作業更難以進行,亦即,其使得已進行研磨製程後更難以得到實質平整的表面。在另一個實施例中,為了對抗這個產生具有厚邊緣輪廓之導電材料層的傾向,可調整電鍍製程的 各種處理參數。然而,此等處理變更可能導致在晶圓之中間區域產生太薄的導電層,從而導致形成厚度不如設計程序所希望的瑕疵連線特徵(defective wiring features)。此等瑕疵連線特徵可能減少積體電路產品的使用期限,並且在最糟糕的情況下,可能會導致裝置完全失效。 The formation of such thick edge layer materials makes subsequent processing more difficult. For example, such thick edge material layers make subsequent chemical mechanical polishing operations more difficult, that is, it makes it more difficult to obtain a substantially flat surface after the polishing process has been performed. In another embodiment, the plating process can be adjusted to counter the tendency to create a layer of conductive material having a thick edge profile. Various processing parameters. However, such processing variations may result in a too thin conductive layer in the middle region of the wafer, resulting in the formation of a defective wiring feature that is less thick than desired by the design process. These 瑕疵 connection features may reduce the life of the integrated circuit product and, in the worst case, may result in complete failure of the device.

為了避免或降低此等厚邊緣導電層產生的幅度,已努力使用一種包含使用所謂電流屏蔽的技術。電流屏蔽通常係置於陽極與晶圓之間並且作用為降低晶圓邊緣區的電場,其降低晶圓邊緣區上形成的導電材料量。電流屏蔽可由諸如非導電性、惰性材料、類塑膠等各種材料製成。電流屏蔽依據其介於陽極與晶圓之間的區域可為固定式或可調整式。在一個實施例中,固定式電流屏蔽具有大約20至30毫米(mm)的徑向寬度(radial width)以及等級大約2至3毫米的厚度。此等固定式電流屏蔽通常係藉由試誤程序(trial and error process)針對特定程序流程及/或裝置而調整尺寸以及組構。一旦達到可接受結果,經特定設計的電流屏蔽係用於生產作業。不幸的是,當製程條件或晶圓設計有變更時,既有的電流屏蔽可能未產生可接受的結果。在這種情況下,電流屏蔽可能需要決定(藉由試誤)新的設計然後投入生產服務。或者,製程工程師可利用小於所需的原始電流屏蔽試著「代用(make-do)」,其可能導致導電層的生產不具有所需或目標厚度輪廓以及上述此等層間的相關問題。 In order to avoid or reduce the amplitude produced by such thick edge conductive layers, efforts have been made to use a technique involving the use of so-called current shielding. Current shielding is typically placed between the anode and the wafer and acts to reduce the electric field in the edge regions of the wafer, which reduces the amount of conductive material formed on the edge regions of the wafer. The current shield can be made of various materials such as non-conductive, inert materials, plastics, and the like. The current shield can be fixed or adjustable depending on its area between the anode and the wafer. In one embodiment, the stationary current shield has a radial width of about 20 to 30 millimeters (mm) and a thickness of about 2 to 3 millimeters. Such fixed current shields are typically sized and organized for a particular program flow and/or device by a trial and error process. Once an acceptable result is achieved, a specially designed current shield is used for production operations. Unfortunately, existing process shielding may not produce acceptable results when process conditions or wafer design changes. In this case, the current shield may need to decide (by trial and error) the new design and then put it into production service. Alternatively, the process engineer may try to "make-do" with less than the original current shield required, which may result in the production of the conductive layer not having the desired or target thickness profile and the associated problems between such layers.

本揭示係針對可解決或降低以上所發現之 一個或多個問題的新穎性可調整式電流屏蔽。 The present disclosure is directed to solving or reducing the above findings Novelty adjustable current shielding for one or more problems.

下文為了提供對本發明某些態樣的基本瞭解而介紹簡化的發明內容。本內容不是本發明的詳盡概述。用意不在於識別本發明的主要或關鍵要素或描述本發明的範疇。唯一目的在於以簡化形式介紹某些概念作為後文所述更詳細實施方式的引言。 The simplified summary is presented below to provide a basic understanding of certain aspects of the invention. This content is not an exhaustive overview of the invention. It is not intended to identify key or critical elements of the invention or the scope of the invention. The sole purpose is to present some concepts in a simplified form as an introduction to the more detailed embodiments described hereinafter.

一般而言,本揭示內容係針對包括電鍍製程作業中所可使用之可調整式電流屏蔽的鍍覆工具。本文所揭示的一個例示性鍍覆設備包括適用於收置基板的基板保持器、陽極、以及置於基板保持器與陽極之間的可調整式電流屏蔽。在本例示性具體實施例中,可調整式電流屏蔽包括固定式構件、適用於相對於固定式構件移動的可移動式構件、以及有效耦接於固定式構件或可移動式構件的複數個電流屏蔽構件,其中每一個電流屏蔽構件都可轉動性地釘於固定式構件或可移動式構件,以及其中每一個電流屏蔽構件都適用於在移動式構件與固定式構件之間有相對移動時轉動。 In general, the present disclosure is directed to a plating tool that includes an adjustable current shield that can be used in an electroplating process. An exemplary plating apparatus disclosed herein includes a substrate holder adapted to receive a substrate, an anode, and an adjustable current shield disposed between the substrate holder and the anode. In the exemplary embodiment, the adjustable current shield includes a stationary member, a movable member adapted to move relative to the stationary member, and a plurality of currents operatively coupled to the stationary member or the movable member a shielding member, wherein each of the current shielding members is rotatably nailed to the stationary member or the movable member, and wherein each of the current shielding members is adapted to rotate when there is relative movement between the movable member and the stationary member .

本文所揭示的另一個例示性鍍覆設備包括適用於收置基板的基板保持器、陽極、以及置於基板保持器與陽極之間的可調整式電流屏蔽。在本例示性具體實施例中,可調整式電流屏蔽包括固定環、適用於相對於固定環移動的可移動環、以及有效耦接於固定環和可移動環的複數個電流屏蔽構件,其中每一個電流屏蔽構件都可轉動 性地釘於固定環或可移動環,以及其中,每一個電流屏蔽構件都適用於在可移動環與固定環之間有相對移動時轉動,從而取決於相對移動的方向徑向地朝內或朝外移動每一個電流屏蔽構件的一部分。 Another exemplary plating apparatus disclosed herein includes a substrate holder adapted to receive a substrate, an anode, and an adjustable current shield disposed between the substrate holder and the anode. In the exemplary embodiment, the adjustable current shield includes a retaining ring, a movable ring adapted to move relative to the stationary ring, and a plurality of current shielding members operatively coupled to the stationary ring and the movable ring, wherein each a current shielding member can be rotated Scratchingly to the retaining ring or the movable ring, and wherein each of the current shielding members is adapted to rotate when there is relative movement between the movable ring and the retaining ring, thereby radially inward depending on the direction of relative movement or A portion of each of the current shielding members is moved outward.

本文所揭示的又另一個例示性鍍覆設備包括適用於收置基板的基板保持器、陽極、以及置於基板保持器與陽極之間的可調整式電流屏蔽,其中,可調整式電流屏蔽包括可予以移動以致有效變更可調整式電流屏蔽之開口之尺寸的複數個分段式屏蔽構件。 Yet another exemplary plating apparatus disclosed herein includes a substrate holder adapted to receive a substrate, an anode, and an adjustable current shield disposed between the substrate holder and the anode, wherein the adjustable current shield comprises A plurality of segmented shield members that can be moved to effectively change the size of the opening of the adjustable current shield.

10‧‧‧噴塗型電鍍設備 10‧‧‧Spray type plating equipment

12‧‧‧主鍍槽容器 12‧‧‧Main plating tank container

14‧‧‧鍍槽 14‧‧‧ plating tank

16‧‧‧圓柱狀容器壁 16‧‧‧ cylindrical container wall

18‧‧‧高度 18‧‧‧ Height

20‧‧‧基板保持器 20‧‧‧Substrate holder

22‧‧‧積體電路基板 22‧‧‧Integrated circuit substrate

22B‧‧‧基板背側 22B‧‧‧ back side of the substrate

22F‧‧‧基板前鍍覆面 22F‧‧‧front plating surface

24‧‧‧電源 24‧‧‧Power supply

26‧‧‧主軸 26‧‧‧ Spindle

30‧‧‧陽極 30‧‧‧Anode

32‧‧‧箭號 32‧‧‧Arrow

34‧‧‧箭號 34‧‧‧Arrow

36‧‧‧入口 36‧‧‧ Entrance

38‧‧‧循環幫浦 38‧‧‧Circular pump

100‧‧‧可調整式電流屏蔽 100‧‧‧Adjustable current shielding

102‧‧‧固定環 102‧‧‧Fixed ring

104‧‧‧內表面 104‧‧‧ inner surface

106‧‧‧外表面 106‧‧‧Outer surface

108‧‧‧針腳 108‧‧‧ stitches

110‧‧‧突出部 110‧‧‧Protruding

111‧‧‧凹部 111‧‧‧ recess

112‧‧‧可移動環 112‧‧‧ movable ring

113‧‧‧齒輪齒 113‧‧‧ gear teeth

114‧‧‧內表面 114‧‧‧ inner surface

115‧‧‧槓桿 115‧‧‧Leverage

116‧‧‧外表面 116‧‧‧ outer surface

118‧‧‧針腳 118‧‧‧ stitches

130‧‧‧電流屏蔽構件 130‧‧‧ Current shielding components

132‧‧‧樞孔 132‧‧‧ pivot hole

134‧‧‧插槽 134‧‧‧ slots

136‧‧‧電流屏蔽構件的一部分、遠端部位 136‧‧‧Part of the current shielding member, distal part

140‧‧‧驅動馬達 140‧‧‧Drive motor

142‧‧‧齒件、齒輪齒 142‧‧‧ teeth, gear teeth

150‧‧‧箭號 150‧‧‧Arrow

150A‧‧‧徑向朝內方向 150A‧‧‧ Radial inward direction

152‧‧‧箭號 152‧‧‧Arrow

160、162‧‧‧方向 160, 162‧ ‧ direction

本揭露可參照底下說明配合附圖予以理解,其中相同的元件符號視為相稱的元件,以及其中:第1和1A圖係如本文所揭示之具有可調整式電流屏蔽之電鍍設備之各個例示性具體實施例的簡化和示意圖;第2A至2E圖描述如本文所揭示之可調整式電流屏蔽之一個例示性具體實施例的各個例示性態樣;以及第3A至3B圖描述本文所揭示之例示性可調整式電流屏蔽中所可使用複數個電流屏蔽構件的一個例示性具體實施例。 The disclosure may be understood by reference to the following description in which the same reference numerals are considered to be commensurate elements, and wherein: FIGS. 1 and 1A are exemplary representations of an electroplating apparatus having an adjustable current shield as disclosed herein. Simplification and Schematic of a Specific Embodiment; FIGS. 2A through 2E depict various exemplary aspects of an exemplary embodiment of an adjustable current shield as disclosed herein; and FIGS. 3A through 3B depict an illustration disclosed herein An illustrative embodiment of a plurality of current shielding members can be used in a sexually adjustable current shield.

儘管本文所揭示的技術主題容許各種修改和替代形式,但其特定具體實施例仍已藉由圖式中的實施例表示並且在本文中予以詳述。然而,應理解的是,本文 對特定具體實施例的說明用意不在於限制本發明於所揭示的特殊形式,相反地,用意在於含括落於如申請專利範圍所界定之本發明精神與範疇內的所有修改、等效、以及替代者。 While the technical subject matter disclosed herein is susceptible to various modifications and alternatives, the specific embodiments are shown in the drawings and are described in detail herein. However, it should be understood that this article The description of the specific embodiments is not intended to limit the scope of the invention, and the invention is intended to be replacement.

底下說明的是本發明的各種例示性具體實施例。為求清楚,未在本說明書中說明實際實作的所有特徵。當然應了解的是,在任何此實際具體實施例的研發中,必須施作許多實現特定性決策以達成研發者的特定目的,如符合系統相關與商業相關之限制條件,其視實作而不同。再者,將了解的是,此研發計劃可能複雜且耗時,不過這對於得益於本揭示內容之技術領域中具有通常知識者而言仍將是例行事務。 The various illustrative embodiments of the invention are described below. For the sake of clarity, not all features of the actual implementation are described in this specification. It should of course be understood that in the development of any such actual embodiment, many implementation specific decisions must be made to achieve the specific goals of the developer, such as compliance with system-related and business-related constraints, which vary from implementation to implementation. . Again, it will be appreciated that this development plan can be complex and time consuming, but would still be a routine matter for those of ordinary skill in the art having the benefit of this disclosure.

現在將參照附圖說明本技術主題。圖式中所示意的各種結構、系統及裝置其目的僅在於說明以便不被所屬領域的技術人員所熟知的細節混淆本揭示內容。雖然如此,仍含括附圖以說明並且解釋本揭示的例示性實施例。應該將本文的用字及詞組理解並且解讀為與所屬相關領域的技術人員所理解的用字及詞組具有相容的意義。術語或詞組的特殊定義,亦即,有別於所屬領域的技術人員所理解的普通及慣用意義的定義,用意是要藉由本文對於術語或詞組的一致性用法予以隱喻。就術語或詞組用意在於具有特殊意義,亦即,不同於所屬領域的技術人員所理解的術語或詞組,的方面來說,此特殊定義將在說明書中 以直接並且明確提供術語或詞組特殊定義的明確方式予以清楚提出。 The subject matter of the present technology will now be described with reference to the drawings. The various structures, systems, and devices illustrated in the drawings are intended to be illustrative only and not to obscure the present disclosure. Nevertheless, the attached drawings are included to illustrate and explain the illustrative embodiments of the present disclosure. Words and phrases herein are to be understood and interpreted as being compatible with the words and phrases as understood by those skilled in the relevant art. A particular definition of a term or phrase, that is, a definition of ordinary and customary meaning as understood by one of ordinary skill in the art, is intended to be metaphorized by the consistent usage of the term or phrase herein. The term or phrase is intended to have a special meaning, that is, different from the term or phrase understood by those skilled in the art, this particular definition will be in the specification. Clearly presented in a clear and direct manner and with specific definitions of terms or phrases.

本揭示內容係針對包括電鍍製程作業中所可使用之可調整式電流屏蔽的電鍍工具。對於所屬領域的技術人員在完整閱讀本申請書後將輕易顯而易知的是,本文所揭示的方法及裝置可用於各種不同製造應用及技術,例如,用以形成均勻導電層的標準鍍覆作業、圖案化鍍覆塗敷等。此外,本文所揭示的方法及裝置還可用於製造各種不同裝置,包括但不侷限於邏輯裝置、記憶體裝置等。請參閱附圖,現在將更詳細說明的是本文所揭示之方法及裝置的各個例示性具體實施例。 The present disclosure is directed to an electroplating tool that includes an adjustable current shield that can be used in an electroplating process. It will be readily apparent to those skilled in the art, after a complete reading of this application, that the methods and apparatus disclosed herein can be used in a variety of different manufacturing applications and techniques, for example, standard plating to form a uniform conductive layer. Work, patterned plating, etc. Moreover, the methods and apparatus disclosed herein can also be used to fabricate a variety of different devices including, but not limited to, logic devices, memory devices, and the like. Referring to the drawings, the various exemplary embodiments of the methods and apparatus disclosed herein will now be described in detail.

第1圖根據本文所揭示的一個例示性具體實施例以示意及簡化形式描述噴塗型電鍍設備10,其中本文所揭示的可調整式電流屏蔽100係實質水平取向於設備10內並且垂直置於陽極上面。然而,將如所屬領域的技術人員所知道的是,本文所揭示的可調整式電流屏蔽還可用在垂直型鍍覆工具中,其中本文所揭示的可調整式電流屏蔽100係實質垂直取向於此垂直型鍍覆工具中,如第1A圖示意性所示。所揭示的電鍍設備10包含主鍍槽容器12,該主鍍槽容器12包含內含電解電鍍液之習知鍍槽14。圓柱狀容器壁16決定鍍槽14的高度18。電鍍設備10還包括基板/晶圓保持器20以及示意性描繪的陽極30。基板保持器20適用於保持積體電路基板22。馬達(圖未示)驅動鍍覆作業期間繞著中央軸轉動基板保持器20及基板22的主 軸26。基板22具有基板背側22B及基板前鍍覆面22F。前鍍覆面22F通常具有形成於其上用以促進鍍覆作業的導電晶種層(圖未示),例如,導電銅晶種層或鉭或鈦氮化物阻障層。基板保持器20的形狀及組構可取決於所用鍍覆設備的類型而變。在某些情況下,基板保持器20可包括相容性O型環密封件(圖未示)以及用於將電源24負接端電性連接到基板20邊緣處之導電晶種層(圖未示)的一組電性接觸件(圖未示)。電源24的正接端係導電性耦接至陽極30。基板22可由諸如矽、矽/鍺、紅寶石、石英、藍寶石以及砷化鎵之類的任何半導電性材料所構成。由於可由配置成各種組構的多個部件所構成並且可具有多個開口,所以陽極30本質上屬於例示性。 1 depicts a spray-type plating apparatus 10 in a schematic and simplified form in accordance with an exemplary embodiment disclosed herein, wherein the adjustable current shield 100 disclosed herein is substantially horizontally oriented within the apparatus 10 and vertically disposed at the anode. Above. However, as will be appreciated by those skilled in the art, the adjustable current shield disclosed herein can also be used in a vertical type of plating tool, wherein the adjustable current shield 100 disclosed herein is substantially vertically oriented thereto. In the vertical type plating tool, as shown in Fig. 1A, it is schematically shown. The disclosed electroplating apparatus 10 includes a main plating tank vessel 12 containing a conventional plating tank 14 containing an electrolytic plating bath. The cylindrical container wall 16 determines the height 18 of the plating tank 14. The electroplating apparatus 10 also includes a substrate/wafer holder 20 and a schematically depicted anode 30. The substrate holder 20 is adapted to hold the integrated circuit substrate 22. A motor (not shown) drives the main body of the substrate holder 20 and the substrate 22 to rotate around the central axis during the plating operation Axis 26. The substrate 22 has a substrate back side 22B and a substrate front plated surface 22F. The front plated surface 22F typically has a conductive seed layer (not shown) formed thereon to facilitate the plating operation, for example, a conductive copper seed layer or a tantalum or titanium nitride barrier layer. The shape and configuration of the substrate holder 20 may vary depending on the type of plating apparatus used. In some cases, the substrate holder 20 can include a compatible O-ring seal (not shown) and a conductive seed layer for electrically connecting the negative terminal of the power source 24 to the edge of the substrate 20. A set of electrical contacts (not shown). The positive terminal of the power source 24 is electrically coupled to the anode 30. Substrate 22 can be constructed of any semiconducting material such as tantalum, niobium, tantalum, ruby, quartz, sapphire, and gallium arsenide. The anode 30 is essentially illustrative in that it can be constructed from multiple components configured in various configurations and can have multiple openings.

仍如第1圖所示,電鍍設備還包括如本文所揭示之示意性描述的可調整式電流屏蔽100。一般而言,可調整式電流屏蔽100係置於陽極30與基板22或基板保持器20之間。可調整式電流屏蔽100可藉由例如夾子(clips)、啣套(lugs)、螺栓連接等任何一種想得到的技術而緊固於容器壁16。可調整式電流屏蔽100的周邊不一定要對著容器壁16的內面密封。可將可調整式電流屏蔽100置於離基板22的任何期望距離,並且此距離可取決於特定應用而變。例如,基於待沉積於基板22上之導電層的所需厚度輪廓,可至少部分決定可調整式電流屏蔽100的位置。一般而言,可調整式電流屏蔽100愈靠近基板22而置,可調整式電流屏蔽100對晶圓22上所待沉積導電層之所產 生厚度輪廓的影響就愈大。可調整式電流屏蔽100及容器壁16可由阻擋槽14內之電解電鍍液腐蝕(attack)的材料所構成。這些結構可由包括在電鍍製程期間用以防止金屬電鍍到這些結構上之介電塗料在內的複合物材料或介電材料所構成。這些結構還可由諸如聚丙烯、聚乙烯與氟聚合物(尤其是聚偏二氟乙烯(polyvinylidine fluoride)、或氧化鋁或氧化鋯等陶瓷之類的各種塑料所製成。第1圖所示的設備10為例示性噴塗型鍍覆工具的簡化及示意描述,其基本構造對於所屬領域的技術人員是眾所周知的。如先前所述,本文所揭示的可調整式電流屏蔽100也可用於所謂的垂直型鍍覆工具,其基本構造對於所屬領域的技術人員是眾所周知的。第1A圖為此垂直型鍍覆設備之某些主要組件的簡化及示意描述。更具體地說,如第1A圖所示,在某些具體實施例中,基板保持器20、基板22、可調整式電流屏蔽100全都可予以實質垂直取向,其中可調整式電流屏蔽100係橫置於基板保持器20與陽極30之間。 As still shown in FIG. 1, the electroplating apparatus also includes an adjustable current shield 100 as schematically depicted herein. In general, the adjustable current shield 100 is placed between the anode 30 and the substrate 22 or substrate holder 20. The adjustable current shield 100 can be secured to the container wall 16 by any of the desired techniques, such as clips, lugs, bolted connections, and the like. The periphery of the adjustable current shield 100 does not have to be sealed against the inner face of the container wall 16. The adjustable current shield 100 can be placed at any desired distance from the substrate 22, and this distance can vary depending on the particular application. For example, the position of the adjustable current shield 100 can be determined, at least in part, based on the desired thickness profile of the conductive layer to be deposited on the substrate 22. In general, the closer the adjustable current shield 100 is to the substrate 22, the adjustable current shield 100 produces the conductive layer to be deposited on the wafer 22. The effect of the thickness profile is greater. The adjustable current shield 100 and the container wall 16 may be constructed of a material that blocks the electrolytic plating solution in the bath 14. These structures may be comprised of a composite material or dielectric material including dielectric coatings used to prevent metal plating onto these structures during the electroplating process. These structures can also be made of various plastics such as polypropylene, polyethylene and fluoropolymers (especially polyvinylidine fluoride, or ceramics such as alumina or zirconia). Apparatus 10 is a simplified and schematic depiction of an exemplary spray-type plating tool, the basic construction of which is well known to those skilled in the art. As previously described, the adjustable current shield 100 disclosed herein can also be used for so-called vertical Type plating tools, the basic construction of which is well known to those skilled in the art. Figure 1A is a simplified and schematic illustration of some of the main components of this vertical type plating apparatus. More specifically, as shown in Figure 1A. In some embodiments, the substrate holder 20, the substrate 22, and the adjustable current shield 100 are all substantially vertically oriented, wherein the adjustable current shield 100 is disposed between the substrate holder 20 and the anode 30. .

例示性電鍍鍍槽14為通常在酸性溶液中含有待鍍覆金屬(連同相關陰離子)的習知槽。通常使用硫酸水性溶液中溶解的CuSO4溶液進行銅電鍍。除了電鍍槽14的這些主要成份,槽14還常含有許多其為添加至鍍槽14以變更鍍覆行為之任何類型化合物的添加物。根據所屬領域的技術人員的設計選擇,有三種常見的鍍槽添加物:抑制劑、促進劑(accelerator)以及平整劑(leveler)。抑制劑添加物阻得鍍覆反應並且提升單元(cell)的平整度。促進劑添 加物通常為在抑制影響或控制下加速鍍覆反應的催化劑。平整劑的作用與抑制劑相似,但具有高度電化學活性(亦即,更易於電化學轉換),在電化學反應上少了其抑制特性。平整劑還傾向於在進行鍍覆之表面的凹陷區上加速鍍覆,從而傾向於平整所鍍覆的表面。當然,所屬領域的技術人員在完整閱讀本申請書後將了解的是,本文所揭示的發明不侷限於任何類型鍍槽的使用,本文所揭示的發明可利用各種不同的鍍槽化學。 Exemplary electroplating baths 14 are conventional tanks that typically contain a metal to be plated (along with associated anions) in an acidic solution. Copper plating is usually carried out using a dissolved CuSO 4 solution in an aqueous sulfuric acid solution. In addition to these major components of plating bath 14, tank 14 also often contains a number of additives that are any type of compound that is added to plating bath 14 to alter the plating behavior. There are three common plating bath additions depending on the design choices of those skilled in the art: inhibitors, accelerators, and levelers. The inhibitor additive blocks the plating reaction and raises the flatness of the cell. The promoter additive is typically a catalyst that accelerates the plating reaction under the influence or control of inhibition. The leveling agent acts similarly to the inhibitor, but is highly electrochemically active (i.e., easier to electrochemically convert) and has less inhibitory properties in electrochemical reactions. The leveling agent also tends to accelerate plating on the recessed areas of the plated surface, tending to flatten the plated surface. Of course, those skilled in the art, after reading this application in its entirety, will appreciate that the invention disclosed herein is not limited to the use of any type of plating bath, and that the invention disclosed herein may utilize a variety of different plating chemistries.

現在將說明的是典型鍍覆製程的一般態樣。所屬領域的技術人員將了解的是,鍍覆設備10的容器壁16作用為溢流堰(overflow weir)。在典型作業期間,基板保持器20係部分沉浸在鍍槽14內,使得電解電鍍液浸濕基板22的鍍覆面22F但未浸濕基板保持器20的上部位。一般而言,鍍液如箭號32所示由容器/堰件16溢流到介於主鍍槽容器12與容器壁16之間的空間。之後,如箭號34所示,鍍液流到循環幫浦38的入口36。在作業期間,循環幫浦38通常使鍍液持續循環流至鍍槽14,如箭號26所示。依此方式,可在鍍覆作業期間維持槽高度18。基本上,鍍覆溶液向上流經陽極30的開口(圖未示)並且繞著陽極30朝基板22流動。在使用期間,電源供應器24使晶圓22相對於陽極30偏壓成負電位,造成電流由陽極30流到基板22。這也造成由陽極30到基板22的電流通量,其中電流通量係界定為通過面積的力線(場線)數。這造成電化學反應(例如,Cu+++2e-=Cu),導致導電層(例如,銅)在 基板22之前面22F上的沉積。電鍍溶液內所需金屬的離子濃度可在鍍覆周期期間藉由在鍍覆溶液中溶解例如銅之陽極30的金屬而得以補充。 What will now be described is the general aspect of a typical plating process. Those skilled in the art will appreciate that the vessel wall 16 of the plating apparatus 10 acts as an overflow weir. During a typical operation, the substrate holder 20 is partially immersed in the plating tank 14 such that the electrolytic plating solution wets the plated surface 22F of the substrate 22 but does not wet the upper portion of the substrate holder 20. In general, the plating solution overflows from the container/clam 16 as indicated by arrow 32 to the space between the main plating tank vessel 12 and the vessel wall 16. Thereafter, as indicated by arrow 34, the plating solution flows to the inlet 36 of the circulation pump 38. During operation, the circulation pump 38 typically circulates the plating solution continuously to the plating tank 14, as indicated by arrow 26. In this manner, the trough height 18 can be maintained during the plating operation. Basically, the plating solution flows upward through the opening of the anode 30 (not shown) and flows around the anode 30 toward the substrate 22. During use, the power supply 24 biases the wafer 22 to a negative potential relative to the anode 30, causing current to flow from the anode 30 to the substrate 22. This also causes a current flux from the anode 30 to the substrate 22, where the current flux is defined as the number of force lines (field lines) through the area. This causes an electrochemical reaction (e.g., Cu ++ + 2e - = Cu), resulting in deposition of a conductive layer (e.g., copper) on the front face 22F of the substrate 22. The ion concentration of the desired metal in the plating solution can be replenished during the plating cycle by dissolving the metal of the anode 30, such as copper, in the plating solution.

第2A至2E圖描述如本文所揭示之可調整式電流屏蔽100例示性實施例的各個態樣。第3A至3B圖描述本文所揭示例示性可調整式電流屏蔽100中所可使用複數個電流屏蔽構件的一個例示性實施例。一般而言,在所揭示的實施例中,可調整式電流屏蔽100係由固定環102(請參閱第2A至2B圖)、可調整或可移動環112(請參閱第2C至2D圖)以及複數個電流屏蔽構件130(請參閱第3A至3B圖)所構成。如下文將更完整描述的是,在作業時,可移動環112適用於相對於固定環102而移動。可移動環112的相對移動使每一個電流屏蔽構件130的一部分(136)徑向地朝內移動,從而有效改變屏蔽構件130的「尺寸」及其屏蔽能力。 2A through 2E depict various aspects of an exemplary embodiment of an adjustable current shield 100 as disclosed herein. 3A-3B depict one illustrative embodiment of a plurality of current shield members that may be used in the exemplary adjustable current shield 100 disclosed herein. In general, in the disclosed embodiment, the adjustable current shield 100 is comprised of a retaining ring 102 (see Figures 2A-2B), an adjustable or movable ring 112 (see Figures 2C through 2D), and A plurality of current shielding members 130 (see FIGS. 3A to 3B) are constructed. As will be more fully described below, the movable ring 112 is adapted to move relative to the stationary ring 102 during operation. The relative movement of the movable ring 112 causes a portion (136) of each of the current shielding members 130 to move radially inwardly, thereby effectively changing the "size" of the shield member 130 and its shielding capability.

第2A至2B圖描述固定環102之一個例示性實施例的各個態樣。在所示實施例中,固定環102具有內表面104、外表面106以及界定適用於收置可移動環112之凹部111的突出部110。複數個針腳108係接附於固定環102。固定環102可藉由例如夾子、啣套、螺栓連接等(圖未示)任何一種想要的技術而緊固於容器壁16。固定環102的外表面106不一定對著容器壁16的內表面密封。固定環102的實體尺寸可取決於各種因素而變,包括將用於其內之鍍覆設備10的尺寸以及預期要在作業時經歷的機械負 荷。在一個例示性實施例中,固定環102可具有大約5至50毫米的徑向厚度(外徑減內徑)、以及大約5至25毫米的整體厚度。固定環102可由包括塗佈諸如聚丙烯、聚乙烯與氟聚合物(尤其是聚偏二氟乙烯)、或氧化鋁或氧化鋯等陶瓷之類各種塑料之介電質在內的複合物材料或介電材料所製成。樞軸針腳108的數量、尺寸和位置也可取決於可調整式電流屏蔽100中所使用之電流屏蔽構件130的數量及特定應用而變。 2A-2B depict various aspects of an exemplary embodiment of the retaining ring 102. In the illustrated embodiment, the retaining ring 102 has an inner surface 104, an outer surface 106, and a projection 110 that defines a recess 111 suitable for receiving the movable ring 112. A plurality of stitches 108 are attached to the retaining ring 102. The retaining ring 102 can be secured to the container wall 16 by any desired technique, such as a clip, a sleeve, a bolted connection, and the like (not shown). The outer surface 106 of the retaining ring 102 does not necessarily seal against the inner surface of the container wall 16. The physical dimensions of the retaining ring 102 can vary depending on various factors, including the size of the plating apparatus 10 to be used therein and the mechanical negative that is expected to be experienced during operation. Lotus. In an exemplary embodiment, the retaining ring 102 can have a radial thickness (outer diameter minus inner diameter) of about 5 to 50 millimeters, and an overall thickness of about 5 to 25 millimeters. The retaining ring 102 may be comprised of a composite material comprising a dielectric of various plastics such as polypropylene, polyethylene and a fluoropolymer (especially polyvinylidene fluoride), or a ceramic such as alumina or zirconia or Made of dielectric material. The number, size, and location of the pivot pins 108 may also vary depending on the number of current shield members 130 used in the adjustable current shield 100 and the particular application.

第2C至2D圖描述可用於本文所揭示之可調整式電流屏蔽100中之可移動環112之一個例示性實施例的各個態樣。在所示實施例中,可移動環112具有內表面114和外表面116。複數個針腳118係接附至固定環102。如第2E圖所示,可移動環112適用於置於固定環102中所形成的凹部111內。可提供各種手段中的任何一種俾令可移動環112相對於固定環102移動。在所示實施例中,此手段可包括耦接至可移動環112的複數個示意性描述的齒輪齒113。齒輪齒113係適用於藉由驅動構件或裝置(第2C圖中未圖示)而嚙合以造成可移動環112相對移動。或者,此手段可包括耦接至可移動環112的示意性所示槓桿115。槓桿115係適用於藉由驅動構件或裝置(未示於第2C圖中)或手動造成可移動環112相對移動。可移動環112的實體尺寸可取決於各種因素而變,包括將用於其內之鍍覆設備10的尺寸以及預期要在作業時經歷的機械負荷。在一個例示性實施例中,可移動環112可具有大約5至30毫米 的徑向厚度(外徑減內徑)、以及大約5至20毫米的整體厚度。可移動環112可由包括塗佈諸如聚丙烯、聚乙烯與氟聚合物(尤其是聚偏二氟乙烯)、或氧化鋁或氧化鋯等陶瓷之類各種塑料之介電質在內的複合物材料或介電材料所製成。針腳118的數量、尺寸及位置也可取決於可調整式電流屏蔽100中所使用之電流屏蔽構件130的數量和特定應用而變。 2C through 2D depict various aspects of an illustrative embodiment of a movable ring 112 that may be used in the adjustable current shield 100 disclosed herein. In the illustrated embodiment, the movable ring 112 has an inner surface 114 and an outer surface 116. A plurality of pins 118 are attached to the retaining ring 102. As shown in FIG. 2E, the movable ring 112 is adapted to be placed in the recess 111 formed in the retaining ring 102. Any of a variety of means can be provided to move the movable ring 112 relative to the stationary ring 102. In the illustrated embodiment, this means can include a plurality of schematically depicted gear teeth 113 coupled to the movable ring 112. The gear teeth 113 are adapted to be engaged by a drive member or device (not shown in FIG. 2C) to cause relative movement of the movable ring 112. Alternatively, this means may include a schematically illustrated lever 115 coupled to the movable ring 112. The lever 115 is adapted to cause relative movement of the movable ring 112 by a drive member or device (not shown in Figure 2C) or manually. The physical size of the movable ring 112 can vary depending on various factors, including the size of the plating apparatus 10 to be used therein and the mechanical load that is expected to be experienced during operation. In an exemplary embodiment, the movable ring 112 can have approximately 5 to 30 millimeters Radial thickness (outer diameter minus inner diameter), and overall thickness of about 5 to 20 mm. The movable ring 112 may be composed of a composite material including a dielectric of various plastics such as polypropylene, polyethylene and fluoropolymer (especially polyvinylidene fluoride), or ceramics such as alumina or zirconia. Or made of dielectric material. The number, size, and location of the pins 118 may also vary depending on the number of current shielding members 130 used in the adjustable current shield 100 and the particular application.

第3A至3B圖描述可搭配本文所揭示之可調整式電流屏蔽100使用之複數個電流屏蔽構件130的一個例示性實施例。第3B圖在某種程度上是具有以虛線描繪之固定環102及可移動環112的可調整式電流屏蔽100的組合件圖式。所屬領域的技術人員在完整閱讀本申請書後將了解的是,搭配本文所示之可調整式電流屏蔽100所用電流屏蔽構件130的尺寸、數量、形狀及組構可取決於特定應用而變。在第3A圖所示的實施例中,每一個電流屏蔽構件130都具有一般細長狀、曲狀組構。在本文所揭示的具體實施例中,每一個電流屏蔽構件130都包含樞孔132及插槽134。在本實施例中,樞孔132係適用於收置並且與固定環102上針腳108之一有效運作,而插槽134則適用於接收並且與可移動環112上其中一個針腳118有效運作。若有需要,電流屏蔽構件130上之插槽134與孔件132的位置可互換,但插槽134的取向必需對照於圖式所示之插槽134的取向轉動九十度。在某些具體實施例中,插槽134可具有某種程度的曲度,但附圖中並未描繪。電 流屏蔽構件130的數量及實體尺寸可取決於各種因素而變,包括將用於其內之鍍覆設備10的尺寸以及電流屏蔽構件130預期在作業時經歷的機械負荷。在一個例示性實施例中,電流屏蔽構件130可具有大約10至30毫米的寬度130W、以及大約1至3毫米的整體厚度。電流屏蔽構件130可由包括塗佈諸如聚丙烯、聚乙烯與氟聚合物(尤其是聚偏二氟乙烯)、或氧化鋁或氧化鋯等陶瓷之類各種塑料之介電質在內的複合物材料或介電材料所製成。 3A-3B depict an illustrative embodiment of a plurality of current shield members 130 that can be used with the adjustable current shield 100 disclosed herein. FIG. 3B is, to some extent, an assembly diagram of an adjustable current shield 100 having a stationary ring 102 and a movable ring 112 depicted in dashed lines. It will be apparent to those skilled in the art, after a complete reading of this application, that the size, number, shape and configuration of the current shield member 130 used in conjunction with the adjustable current shield 100 shown herein may vary depending on the particular application. In the embodiment illustrated in Figure 3A, each of the current shielding members 130 has a generally elongated, curved configuration. In the particular embodiment disclosed herein, each current shield member 130 includes a pivot hole 132 and a slot 134. In the present embodiment, the pivot hole 132 is adapted to be received and operates effectively with one of the pins 108 on the retaining ring 102, while the slot 134 is adapted to receive and function effectively with one of the pins 118 on the movable ring 112. If desired, the positions of the slots 134 and the apertures 132 on the current shield member 130 are interchangeable, but the orientation of the slots 134 must be rotated ninety degrees relative to the orientation of the slot 134 shown in the figures. In some embodiments, the slot 134 can have some degree of curvature, but is not depicted in the figures. Electricity The number and physical dimensions of the flow shield member 130 can vary depending on various factors, including the size of the plating apparatus 10 to be used therein and the mechanical load that the current shield member 130 is expected to experience during operation. In an exemplary embodiment, current shielding member 130 can have a width of about 130 to about 30 millimeters, and an overall thickness of about 1 to 3 millimeters. The current shielding member 130 may be composed of a composite material including a dielectric of various plastics such as polypropylene, polyethylene and a fluoropolymer (especially polyvinylidene fluoride), or a ceramic such as alumina or zirconia. Or made of dielectric material.

請參閱第3B圖,在一個具體實施例中,可移動環112上的齒輪齒113係適用於在如步進馬達之類的例示性驅動馬達140上藉由齒件142予以嚙合。在一個具體實施例中,驅動馬達140適用於造成可移動環112以箭號150(順時鐘)或152(逆時鐘)標示的方向轉動。因此,在本具體實施例中,驅動馬達140構成使移動環112相對移動之機構的部件。例示性槓桿115還可朝方向160、162移動而造成可移動環112相對移動。槓桿115的移動可手動或藉由電機機構完成,如藉由利用適當機械連結而耦接至槓桿115的電動馬達(圖未示)。 Referring to FIG. 3B, in one embodiment, the gear teeth 113 on the movable ring 112 are adapted to be engaged by the teeth 142 on an exemplary drive motor 140, such as a stepper motor. In one particular embodiment, the drive motor 140 is adapted to cause the movable ring 112 to rotate in the direction indicated by arrow 150 (clockwise) or 152 (counterclock). Thus, in the present embodiment, drive motor 140 constitutes a component of the mechanism that relatively moves moving ring 112. The illustrative lever 115 can also move in directions 160, 162 to cause relative movement of the movable ring 112. Movement of the lever 115 can be accomplished manually or by a motor mechanism, such as an electric motor (not shown) coupled to the lever 115 by a suitable mechanical linkage.

在第3B圖所示的實施例中,例示性電流屏蔽構件130有八個係當作本文所揭示的例示性可調整式電流屏蔽100的部件。當然,如上所述,任何特定鍍覆設備10中所用此等電流屏蔽構件130的數量可取決於特定應用而變。可調整式電流屏蔽100係示於第3B圖中其完全封閉的位置裡,其中,由於其涉及在鍍覆作業期間當作電流 屏蔽,所以電流屏蔽構件130具有最小有效寬度。在本文所示的特定實施例中,每一個電流屏蔽構件130的遠端部位136(請參閱第3A圖)都置於相鄰電流屏蔽構件130之一部分上面,並且在某些情況下,可接觸相鄰電流屏蔽構件130。遠端部位136重疊相鄰電流屏蔽構件130的量或程度可取決於特定應用而變。在某些具體實施例中,此重疊可完全都不存在。 In the embodiment illustrated in FIG. 3B, the exemplary current shielding member 130 has eight components that are part of the exemplary adjustable current shield 100 disclosed herein. Of course, as noted above, the number of such current shield members 130 used in any particular plating apparatus 10 can vary depending on the particular application. Adjustable current shield 100 is shown in its fully enclosed position in Figure 3B, where it relates to current as during the plating operation Shielded, so current shield member 130 has a minimum effective width. In the particular embodiment shown herein, the distal end portion 136 of each current shield member 130 (see FIG. 3A) is placed over a portion of the adjacent current shield member 130 and, in some cases, is accessible. Adjacent current shielding member 130. The amount or extent to which the distal portion 136 overlaps adjacent current shielding members 130 may vary depending on the particular application. In some embodiments, this overlap may not exist at all.

電流屏蔽構件130的有效寬度可如下文予以調整。可移動環112朝箭號150所示方向相對於固定環102(藉由槓桿115或馬達140/齒輪齒113/142)的轉動造成一部分電流屏蔽構件130依箭號150A所示方向徑向地朝內延伸,從而增加可調整式電流屏蔽100的有效寬度。在本製程期間,電流屏蔽構件130以固定環102上的針腳108為中心轉動。插槽134與可移動環112上的針腳118一起使電流屏蔽構件130移動。電流屏蔽構件130可徑向地朝內移動的量或範圍取決於可調整式電流屏蔽100的所需有效寬度及鍍覆設備的特定設計。一般來說,可調整式電流屏蔽100對於可移動環112可相對於固定環102轉動多遠將有限制,其將對應於電流屏蔽構件130(圖未示)徑向地朝內方向150A的最大位移。在某些情況下,就可調整式電流屏蔽100處於其完全封閉位置(如第3B圖所示)時每一個電流屏蔽構件130與相鄰電流屏蔽構件130重疊的程度而言,此重疊關係在電流屏蔽構件130朝內移位時可不存在。可移動環112朝箭號152(逆時鐘)所示方向相對於固定 環102(藉由槓桿115或馬達140/齒輪齒113/142)的轉動造成電流屏蔽構件130朝箭號152A所示徑向地朝外方向移動,從而減少可調整式電流屏蔽100的有效寬度。一旦調整可調整式電流屏蔽100以致電流屏蔽構件130係經定位以便在鍍覆作業期間提供電流屏蔽所需量,即可藉由任何適當的機構於所需位置鎖固或緊固可調整式電流屏蔽100。 The effective width of the current shielding member 130 can be adjusted as follows. The movable ring 112 is rotated radially toward the direction of the arrow 150 relative to the retaining ring 102 (by the lever 115 or the motor 140/gear teeth 113/142) causing a portion of the current shield member 130 to be radially oriented in the direction indicated by arrow 150A. The inner extension increases the effective width of the adjustable current shield 100. During the present process, the current shielding member 130 is rotated about the stitch 108 on the stationary ring 102. The slot 134 moves the current shield member 130 together with the pins 118 on the movable ring 112. The amount or extent by which the current shielding member 130 can move radially inward depends on the desired effective width of the adjustable current shield 100 and the particular design of the plating apparatus. In general, the adjustable current shield 100 will have a limit on how far the movable ring 112 can rotate relative to the stationary ring 102, which will correspond to the maximum of the radially inward direction 150A of the current shield member 130 (not shown). Displacement. In some cases, the overlap relationship is such that the current shield member 130 overlaps the adjacent current shield member 130 when the adjustable current shield 100 is in its fully closed position (as shown in FIG. 3B). The current shielding member 130 may not be present when displaced inward. The movable ring 112 is fixed relative to the direction indicated by the arrow 152 (counterclock) Rotation of ring 102 (by lever 115 or motor 140/gear teeth 113/142) causes current shield member 130 to move radially outward as indicated by arrow 152A, thereby reducing the effective width of adjustable current shield 100. Once the adjustable current shield 100 is adjusted such that the current shield member 130 is positioned to provide the amount of current shielding required during the plating operation, the adjustable current can be locked or tightened at the desired location by any suitable mechanism. Shield 100.

所屬領域的技術人員在完整閱讀本申請書後將了解的是,可調整式電流屏蔽100因為其涉及進行鍍覆作業而提供許多優點。例如,就待透過鍍覆設備10處理之基板設計變更、或製程參數變更的程度而言,可調整式電流屏蔽100提供製程工程師可藉以試圖降低或消除產生具有厚邊緣輪廓之鍍覆金屬層之相關問題的可輕易調整式機構。此外,藉由調整電流屏蔽構件130的形狀、尺寸及/或數量,以及就電流屏蔽構件130可徑向地朝內定位之部位的程度而言,製程工程師對於視需要「調整」鍍覆作業具有較大的處理彈性。在一個具體實施例中,本文所揭示的技術主題係針對包括有可為了有效變更實質圓形之電流屏蔽開孔或開口尺寸(有效直徑)而同時或單獨致動之複數個分段式屏蔽構件在內的鍍覆設備。 It will be apparent to those skilled in the art, after a complete reading of this application, that the adjustable current shield 100 provides a number of advantages as it relates to performing a plating operation. For example, the adjustable current shield 100 provides a process engineer with an attempt to reduce or eliminate the formation of a plated metal layer having a thick edge profile in terms of substrate design changes or process parameter changes to be processed by the plating apparatus 10. An easily adjustable mechanism for related issues. Moreover, by adjusting the shape, size and/or number of current shielding members 130, and to the extent that the current shielding member 130 can be positioned radially inward, the process engineer has the ability to "adjust" the plating operation as needed. Larger processing flexibility. In a specific embodiment, the subject matter disclosed herein is directed to a plurality of segmented shield members that include simultaneous or separate actuation of a current shield opening or opening size (effective diameter) that can be used to effectively alter a substantially circular shape. Plating equipment inside.

以上所揭示的特殊具體實施例僅屬例示性,正如本發明可以所屬領域的技術人員所明顯知道的不同但均等方式予以改進並且實踐而具有本文的指導效益。例如,前述製程步驟可用不同順序實施。另外,除了作為 底下申請專利範圍中所述者,對於本文所示構造或設計的細節並無限制用意。因此,得以證實以上所揭示特殊具體實施例可予以改變或改進並且所有此等變化皆視為在本發明的範疇及精神內。因此,本文所謀求的保護係如底下申請專利範圍中所提出者。 The specific embodiments disclosed above are illustrative only, and are intended to be modified and practiced in the various embodiments of the invention as claimed. For example, the aforementioned process steps can be performed in a different order. In addition, as The details of the construction or design shown herein are not intended to be limiting as described in the claims below. Therefore, it is to be understood that the specific embodiments disclosed above may be modified or modified and all such variations are considered within the scope and spirit of the invention. Therefore, the protection sought in this paper is as set forth in the scope of the patent application below.

10‧‧‧噴塗型電鍍設備 10‧‧‧Spray type plating equipment

12‧‧‧主鍍槽容器 12‧‧‧Main plating tank container

14‧‧‧鍍槽 14‧‧‧ plating tank

16‧‧‧圓柱狀容器壁 16‧‧‧ cylindrical container wall

18‧‧‧高度 18‧‧‧ Height

20‧‧‧基板保持器 20‧‧‧Substrate holder

22‧‧‧積體電路基板 22‧‧‧Integrated circuit substrate

22B‧‧‧基板背側 22B‧‧‧ back side of the substrate

22F‧‧‧基板前鍍覆面 22F‧‧‧front plating surface

24‧‧‧電源 24‧‧‧Power supply

26‧‧‧主軸 26‧‧‧ Spindle

30‧‧‧陽極 30‧‧‧Anode

32‧‧‧箭號 32‧‧‧Arrow

34‧‧‧箭號 34‧‧‧Arrow

36‧‧‧入口 36‧‧‧ Entrance

38‧‧‧循環幫浦 38‧‧‧Circular pump

100‧‧‧可調整式電流屏蔽 100‧‧‧Adjustable current shielding

Claims (30)

一種鍍覆設備,包含:適用於容置基板的基板保持器;陽極;以及置於該基板保持器與該陽極之間的可調整式電流屏蔽,其中,該可調整式電流屏蔽包含:固定式構件;適用於相對於該固定式構件移動的可移動式構件;以及有效耦接至該固定式構件與該可移動式構件的複數個電流屏蔽構件,其中,該複數個電流屏蔽構件之各者係可轉動地釘於該固定式構件或該可移動式構件之一,以及其中,該電流屏蔽構件之各者適用於在該可移動式構件與該固定式構件之間有相對移動時轉動。 A plating apparatus comprising: a substrate holder adapted to receive a substrate; an anode; and an adjustable current shield disposed between the substrate holder and the anode, wherein the adjustable current shield comprises: a fixed type a member; a movable member adapted to move relative to the stationary member; and a plurality of current shielding members operatively coupled to the fixed member and the movable member, wherein each of the plurality of current shielding members One of the fixed member or the movable member is rotatably nailed, and wherein each of the current shielding members is adapted to rotate when there is relative movement between the movable member and the fixed member. 如申請專利範圍第1項所述的設備,其中,該基板保持器係垂直置於該陽極之上,以及該可調整式電流屏蔽係垂直置於該陽極之上。 The apparatus of claim 1, wherein the substrate holder is placed vertically above the anode, and the adjustable current shield is placed vertically above the anode. 如申請專利範圍第1項所述的設備,其中,該基板保持器、該陽極和該可調整式電流屏蔽係各為實質垂直取向,以及其中,該可調整式電流屏蔽係橫置於該基板保持器與該陽極之間。 The apparatus of claim 1, wherein the substrate holder, the anode, and the adjustable current shield are each substantially vertically oriented, and wherein the adjustable current shield is transverse to the substrate Between the holder and the anode. 如申請專利範圍第1項所述的設備,其中,該等固定式和可移動式構件各具有環形組構。 The apparatus of claim 1, wherein the fixed and movable members each have a ring-shaped configuration. 如申請專利範圍第1項所述的設備,更包含用於相對於該固定式構件移動該可移動式構件的機構。 The apparatus of claim 1, further comprising means for moving the movable member relative to the stationary member. 如申請專利範圍第1項所述的設備,更包含有效耦接至該可移動式構件的複數個齒輪齒。 The apparatus of claim 1, further comprising a plurality of gear teeth operatively coupled to the movable member. 如申請專利範圍第1項所述的設備,更包含有效耦接至該可移動式構件的槓桿。 The device of claim 1, further comprising a lever operatively coupled to the movable member. 如申請專利範圍第1項所述的設備,其中,當該可調整式電流屏蔽處於完全封閉位置時,該複數個電流屏蔽構件之各者的一部分係與相鄰電流屏蔽構件的一部分重疊。 The apparatus of claim 1, wherein a portion of each of the plurality of current shielding members overlaps a portion of an adjacent current shielding member when the adjustable current shield is in a fully closed position. 如申請專利範圍第1項所述的設備,其中,當該可調整式電流屏蔽處於完全封閉位置時,該複數個電流屏蔽構件之各者的一部分係與相鄰電流屏蔽構件的一部分重疊並且接觸。 The apparatus of claim 1, wherein when the adjustable current shield is in the fully closed position, a portion of each of the plurality of current shielding members overlaps and contacts a portion of the adjacent current shielding member. . 一種鍍覆設備,包含:適用於容置基板的基板保持器;陽極;以及置於該基板保持器與該陽極之間的可調整式電流屏蔽,其中,該可調整式電流屏蔽包含:固定式構件;適用於相對於該固定式構件移動的可移動式構件;以及有效耦接至該固定式構件與該可移動式構件的複數個電流屏蔽構件,其中,該複數個電流屏 蔽構件之各者係可轉動地釘於該固定式構件或該可移動式構件之一,以及其中,該電流屏蔽構件之各者的一部分適用於在該可移動式構件與該固定式構件之間取決相對移動的方向而有相對移動時朝內或朝外移動。 A plating apparatus comprising: a substrate holder adapted to receive a substrate; an anode; and an adjustable current shield disposed between the substrate holder and the anode, wherein the adjustable current shield comprises: a fixed type a member; a movable member adapted to move relative to the stationary member; and a plurality of current shielding members operatively coupled to the fixed member and the movable member, wherein the plurality of current screens Each of the shielding members is rotatably nailed to one of the stationary member or the movable member, and wherein a portion of each of the current shielding members is adapted to be used between the movable member and the fixed member Depending on the direction of relative movement and moving inward or outward when moving relative to each other. 如申請專利範圍第10項所述的設備,其中,當該可調整式電流屏蔽處於完全封閉位置時,該複數個電流屏蔽構件之各者的一部分係與相鄰電流屏蔽構件的一部分重疊。 The apparatus of claim 10, wherein when the adjustable current shield is in the fully closed position, a portion of each of the plurality of current shield members overlaps a portion of the adjacent current shield member. 如申請專利範圍第11項所述的設備,其中,當該可調整式電流屏蔽處於完全封閉位置時,該複數個電流屏蔽構件之各者的一部分係與相鄰電流屏蔽構件的一部分重疊並且接觸。 The apparatus of claim 11, wherein when the adjustable current shield is in the fully closed position, a portion of each of the plurality of current shielding members overlaps and contacts a portion of the adjacent current shielding member . 如申請專利範圍第10項所述的設備,其中,該基板保持器係垂直置於該陽極之上,以及該可調整式電流屏蔽係垂直置於該陽極之上。 The apparatus of claim 10, wherein the substrate holder is placed vertically above the anode, and the adjustable current shield is placed vertically above the anode. 如申請專利範圍第10項所述的設備,其中,該基板保持器、該陽極和該可調整式電流屏蔽係各為實質垂直取向,以及其中,該可調整式電流屏蔽係橫置於該基板保持器與該陽極之間。 The apparatus of claim 10, wherein the substrate holder, the anode, and the adjustable current shield are each substantially vertically oriented, and wherein the adjustable current shield is transverse to the substrate Between the holder and the anode. 一種鍍覆設備,包含:適用於容置基板的基板保持器;陽極;以及置於該基板保持器與該陽極之間的可調整式電流 屏蔽,其中,該可調整式電流屏蔽包含:固定環;適用於相對於該固定環移動的可移動環;以及有效耦接至該固定環與該可移動環的複數個電流屏蔽構件,其中,該複數個電流屏蔽構件之各者係可轉動地釘於該固定環或該可移動環之一,以及其中,該電流屏蔽構件之各者適用於在該可移動環與該固定環之間有相對移動時轉動,藉此取決於相對移動的方向將該電流屏蔽構件之各者的一部分徑向地朝內或朝外移動。 A plating apparatus comprising: a substrate holder adapted to receive a substrate; an anode; and an adjustable current disposed between the substrate holder and the anode Shielding, wherein the adjustable current shield comprises: a fixed ring; a movable ring adapted to move relative to the fixed ring; and a plurality of current shielding members operatively coupled to the fixed ring and the movable ring, wherein Each of the plurality of current shielding members is rotatably nailed to one of the stationary ring or the movable ring, and wherein each of the current shielding members is adapted to be between the movable ring and the stationary ring Rotating relative to movement whereby a portion of each of the current shielding members is moved radially inward or outward depending on the direction of relative movement. 如申請專利範圍第15項所述的設備,其中,該基板保持器係置於該陽極之上,以及該可調整式電流屏蔽係置於該陽極之上。 The apparatus of claim 15 wherein the substrate holder is placed over the anode and the adjustable current shield is placed over the anode. 如申請專利範圍第15項所述的設備,更包含用於相對於該固定式構件移動該可移動式構件的機構。 The apparatus of claim 15 further comprising means for moving the movable member relative to the stationary member. 如申請專利範圍第15項所述的設備,其中,當該可調整式電流屏蔽處於完全封閉位置時,該複數個電流屏蔽構件之各者的一部分係與相鄰電流屏蔽構件的一部分重疊。 The apparatus of claim 15 wherein, when the adjustable current shield is in the fully closed position, a portion of each of the plurality of current shield members overlaps a portion of the adjacent current shield member. 如申請專利範圍第15項所述的設備,其中,當該可調整式電流屏蔽處於完全封閉位置時,該複數個電流屏蔽構件之各者的一部分係與相鄰電流屏蔽構件的一部分重疊並且接觸。 The device of claim 15, wherein when the adjustable current shield is in the fully closed position, a portion of each of the plurality of current shielding members overlaps and contacts a portion of the adjacent current shielding member . 如申請專利範圍第15項所述的設備,其中,該基板保持器係垂直置於該陽極之上,以及該可調整式電流屏蔽係垂直置於該陽極之上。 The apparatus of claim 15 wherein the substrate holder is placed vertically above the anode and the adjustable current shield is placed vertically above the anode. 如申請專利範圍第15項所述的設備,其中,該基板保持器、該陽極和該可調整式電流屏蔽係各為實質垂直取向,以及其中,該可調整式電流屏蔽係橫置於該基板保持器與該陽極之間。 The device of claim 15, wherein the substrate holder, the anode, and the adjustable current shield are each substantially vertically oriented, and wherein the adjustable current shield is transverse to the substrate Between the holder and the anode. 一種鍍覆設備,包含:適用於容置基板的基板保持器;陽極;以及置於該基板保持器與該陽極之間的可調整式電流屏蔽,其中,該可調整式電流屏蔽包含:固定環;適用於相對於該固定環移動的可移動環;以及有效耦接至該固定環與該可移動環的複數個電流屏蔽構件,其中,該複數個電流屏蔽構件之各者係可轉動地釘於該固定環,以及其中,該電流屏蔽構件之各者適用於在該可移動環相對於該固定環移動時轉動,藉以取決於該可移動環相對於該固定環移動的方向將該電流屏蔽構件之各者的一部分徑向地朝內或朝外移動。 A plating apparatus comprising: a substrate holder adapted to receive a substrate; an anode; and an adjustable current shield disposed between the substrate holder and the anode, wherein the adjustable current shield comprises: a fixing ring a movable ring adapted to move relative to the stationary ring; and a plurality of current shielding members operatively coupled to the stationary ring and the movable ring, wherein each of the plurality of current shielding members is rotatably stapled In the retaining ring, and wherein each of the current shielding members is adapted to rotate as the movable ring moves relative to the stationary ring, thereby shielding the current depending on the direction in which the movable ring moves relative to the stationary ring A portion of each of the members moves radially inward or outward. 如申請專利範圍第22項所述的設備,其中,當該可調整式電流屏蔽處於完全封閉位置時,該複數個電流屏 蔽構件之各者的一部分係與相鄰電流屏蔽構件的一部分重疊。 The device of claim 22, wherein the plurality of current screens when the adjustable current shield is in a fully closed position A portion of each of the shielding members overlaps a portion of the adjacent current shielding member. 如申請專利範圍第23項所述的設備,其中,當該可調整式電流屏蔽處於完全封閉位置時,該複數個電流屏蔽構件之各者的一部分係與相鄰電流屏蔽構件的一部分重疊並且接觸。 The apparatus of claim 23, wherein when the adjustable current shield is in the fully closed position, a portion of each of the plurality of current shielding members overlaps and contacts a portion of the adjacent current shielding member . 如申請專利範圍第22項所述的設備,其中,該基板保持器係垂直置於該陽極之上,以及該可調整式電流屏蔽係垂直置於該陽極之上。 The apparatus of claim 22, wherein the substrate holder is placed vertically above the anode, and the adjustable current shield is placed vertically above the anode. 如申請專利範圍第22項所述的設備,其中,該基板保持器、該陽極和該可調整式電流屏蔽係各為實質垂直取向,以及其中,該可調整式電流屏蔽係橫置於該基板保持器與該陽極之間。 The apparatus of claim 22, wherein the substrate holder, the anode, and the adjustable current shield are each substantially vertically oriented, and wherein the adjustable current shield is transverse to the substrate Between the holder and the anode. 一種鍍覆設備,包含:適用於容置基板的基板保持器;陽極;以及置於該基板保持器與該陽極之間的可調整式電流屏蔽,其中,該可調整式電流屏蔽包含:可予以移動以便有效變更該可調整式電流屏蔽之開口之尺寸的複數個分段式屏蔽構件。 A plating apparatus comprising: a substrate holder adapted to receive a substrate; an anode; and an adjustable current shield disposed between the substrate holder and the anode, wherein the adjustable current shield comprises: A plurality of segmented shield members that move to effectively change the size of the opening of the adjustable current shield. 如申請專利範圍第27項所述的設備,其中,當該可調整式電流屏蔽處於完全封閉位置時,該複數個分段式屏蔽構件之各者的一部分係與相鄰分段式屏蔽構件的一部分重疊並且接觸。 The apparatus of claim 27, wherein when the adjustable current shield is in a fully closed position, a portion of each of the plurality of segmented shield members is associated with an adjacent segmented shield member Some overlap and touch. 如申請專利範圍第27項所述的設備,其中,該複數個分段式屏蔽構件之各者的一部分適用於在移動時徑向地朝內或朝外移動。 The apparatus of claim 27, wherein a portion of each of the plurality of segmented shield members is adapted to move radially inward or outward upon movement. 如申請專利範圍第27項所述的設備,其中,該尺寸為該開口的有效直徑。 The apparatus of claim 27, wherein the size is an effective diameter of the opening.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI773784B (en) * 2017-07-11 2022-08-11 日商荏原製作所股份有限公司 Adjustment Plate, Anode Holder, and Substrate Holder

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8475636B2 (en) 2008-11-07 2013-07-02 Novellus Systems, Inc. Method and apparatus for electroplating
US9822461B2 (en) 2006-08-16 2017-11-21 Novellus Systems, Inc. Dynamic current distribution control apparatus and method for wafer electroplating
TWI550139B (en) 2011-04-04 2016-09-21 諾菲勒斯系統公司 Electroplating apparatus for tailored uniformity profile
US9909228B2 (en) 2012-11-27 2018-03-06 Lam Research Corporation Method and apparatus for dynamic current distribution control during electroplating
JP6335763B2 (en) * 2014-11-20 2018-05-30 株式会社荏原製作所 Plating apparatus and plating method
US9752248B2 (en) 2014-12-19 2017-09-05 Lam Research Corporation Methods and apparatuses for dynamically tunable wafer-edge electroplating
JP6335777B2 (en) 2014-12-26 2018-05-30 株式会社荏原製作所 Substrate holder, method for holding substrate with substrate holder, and plating apparatus
US9567685B2 (en) 2015-01-22 2017-02-14 Lam Research Corporation Apparatus and method for dynamic control of plated uniformity with the use of remote electric current
JP6538541B2 (en) * 2015-12-21 2019-07-03 株式会社荏原製作所 Regulation plate, plating apparatus provided with the same, and plating method
WO2017120003A1 (en) * 2016-01-06 2017-07-13 Applied Materials, Inc. Systems and methods for shielding features of a workpiece during electrochemical deposition
JP2017137519A (en) * 2016-02-01 2017-08-10 株式会社荏原製作所 Plating device
JP7014553B2 (en) * 2017-09-22 2022-02-01 株式会社荏原製作所 Plating equipment
JP7193381B2 (en) * 2019-02-28 2022-12-20 株式会社荏原製作所 Plating equipment
EP3719180A1 (en) * 2019-04-04 2020-10-07 ATOTECH Deutschland GmbH Apparatus and method for electrochemically isolating a section of a substrate
JP7193418B2 (en) * 2019-06-13 2022-12-20 株式会社荏原製作所 Plating equipment
CN110284164B (en) * 2019-08-06 2021-03-23 蚌埠富源电子科技有限责任公司 Gold plating solution for pin jack of electronic connector and electroplating equipment thereof
JP7227875B2 (en) * 2019-08-22 2023-02-22 株式会社荏原製作所 Substrate holder and plating equipment
CN110607543B (en) * 2019-10-23 2025-03-21 新阳硅密(上海)半导体技术有限公司 Adjustable shielding device and electroplating shielding method using the same
KR20220078494A (en) * 2020-12-03 2022-06-10 가부시키가이샤 에바라 세이사꾸쇼 Plating apparatus and plating method
KR102470673B1 (en) * 2021-05-20 2022-11-25 (주)네오피엠씨 Automatic moving apparatus of shield plate
WO2022254690A1 (en) * 2021-06-04 2022-12-08 株式会社荏原製作所 Plating device
CN116200798A (en) * 2023-03-31 2023-06-02 上海华力微电子有限公司 Anode blocking device and anode device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4027491B2 (en) * 1998-03-03 2007-12-26 株式会社荏原製作所 Wafer plating method and apparatus
JP2004225129A (en) * 2003-01-24 2004-08-12 Ebara Corp Plating method and plating device
KR20120011476A (en) * 2010-07-29 2012-02-08 현대제철 주식회사 Molten steel supply method and molten steel supply nozzle for continuous casting

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI773784B (en) * 2017-07-11 2022-08-11 日商荏原製作所股份有限公司 Adjustment Plate, Anode Holder, and Substrate Holder

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