TW201417158A - Method and apparatus for separating protective tape and separation tape used for the same - Google Patents
Method and apparatus for separating protective tape and separation tape used for the same Download PDFInfo
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- TW201417158A TW201417158A TW102129539A TW102129539A TW201417158A TW 201417158 A TW201417158 A TW 201417158A TW 102129539 A TW102129539 A TW 102129539A TW 102129539 A TW102129539 A TW 102129539A TW 201417158 A TW201417158 A TW 201417158A
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- peeling
- tape
- wafer
- protective tape
- attached
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- 230000001681 protective effect Effects 0.000 title claims abstract description 151
- 238000000034 method Methods 0.000 title claims abstract description 63
- 238000000926 separation method Methods 0.000 title abstract 6
- 239000012790 adhesive layer Substances 0.000 claims abstract description 49
- 239000002390 adhesive tape Substances 0.000 claims abstract description 25
- 235000012431 wafers Nutrition 0.000 claims description 160
- 230000008569 process Effects 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 35
- 230000007246 mechanism Effects 0.000 claims description 24
- 238000005520 cutting process Methods 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 238000011084 recovery Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 description 27
- 230000001070 adhesive effect Effects 0.000 description 27
- 239000000758 substrate Substances 0.000 description 16
- 239000000523 sample Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000012986 modification Methods 0.000 description 6
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- 230000003287 optical effect Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000004064 recycling Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000003825 pressing Methods 0.000 description 3
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- 238000011156 evaluation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
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- 230000008602 contraction Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- CYKDLUMZOVATFT-UHFFFAOYSA-N ethenyl acetate;prop-2-enoic acid Chemical compound OC(=O)C=C.CC(=O)OC=C CYKDLUMZOVATFT-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
- H01L2221/68395—Separation by peeling using peeling wheel
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
Abstract
Description
本發明係關於一種於對處於貼附有表面保護用之保護帶之狀態下之半導體晶圓進行切晶處理後,於該保護帶上貼附剝離帶而將其剝離去除之保護帶剝離方法、保護帶剝離裝置及使用於其之剝離帶。 The present invention relates to a protective tape peeling method in which a semiconductor wafer in a state in which a protective tape for surface protection is attached is subjected to a dicing treatment, and a peeling tape is attached to the protective tape to be peeled off and removed. The protective tape peeling device and the peeling tape used therefor.
自半導體晶圓(以下,適當地稱為「晶圓」)小片化(晶片)而製造之例如CMOS(Complementary metal oxide semiconductor,互補金氧半導體)等感測器類係被期望在即將封裝於基板之前避免灰塵向該晶片之附著、污染及損傷。因此,於背面研磨(backgrind)前,保持著貼附有貼附於晶圓表面之保護帶之狀態,對晶圓進行切晶處理。其後,對經由切晶帶而接著保持於環狀框(ring frame)之晶片上之保護帶貼附剝離帶而將其剝離(參照日本專利特開2003-209073號公報)。 A sensor type such as a CMOS (Complementary Metal Oxide Semiconductor) manufactured from a small wafer (wafer) of a semiconductor wafer (hereinafter, referred to as "wafer" as appropriate) is expected to be packaged on a substrate. Previously, adhesion, contamination, and damage of dust to the wafer were avoided. Therefore, before the backgrind, the wafer is subjected to a dicing process in a state in which a protective tape attached to the surface of the wafer is attached. Then, the release tape is attached to the protective tape which is then held on the wafer of the ring frame via the dicing tape, and is peeled off (refer to Japanese Laid-Open Patent Publication No. 2003-209073).
又,保持著於表面貼附有藉由加熱而沿著單軸捲繞成筒狀之保護帶之狀態,對晶圓進行切晶處理。於切晶後,對經由切晶帶而接著保持於環狀框之晶片進行加熱,從而剝離保護帶。其後,實施將剝離帶貼附於保護帶並自晶片剝離去除之方法(參照日本專利特開2010-129607號公報)。 Further, the wafer is subjected to a crystal cutting process by attaching a protective tape which is wound into a cylindrical shape along a single axis by heating. After the dicing, the wafer which is then held in the annular frame via the dicing tape is heated to peel off the protective tape. Thereafter, a method of attaching the release tape to the protective tape and peeling it off from the wafer is carried out (refer to Japanese Laid-Open Patent Publication No. 2010-129607).
於先前之保護帶之剝離方法中,產生有如下問題。 In the peeling method of the prior protective tape, the following problems occurred.
即,於將剝離帶貼附於保護帶時,使貼附輥自環狀框之一端側朝向另一端側於剝離帶上滾動。由於對該貼附輥朝向下方作用有施壓 力,因此產生如下等問題:輥陷入至環狀框與晶圓之間,剝離帶之黏著面與切晶帶之黏著面接著,而無法剝離去除剝離帶。 That is, when the release tape is attached to the protective tape, the attaching roller rolls on the peeling tape from one end side toward the other end side of the ring frame. Due to the pressure exerted on the attaching roller downward The force causes a problem such as that the roller is caught between the ring frame and the wafer, and the adhesive surface of the peeling tape is adhered to the adhesive surface of the dicing tape, and the peeling tape cannot be peeled off.
具體而言,剝離帶必須具有如下較強之黏著性,即,緊密地接著於藉由加熱而自切晶後之晶片呈筒狀被剝離之保護帶,且於自各晶片上剝離去除該保護帶之過程中不會脫落。由於在晶片上附有筒狀之保護帶,故而距晶片之間隙增大,從而於貼附該剝離帶時,可抑制剝離帶之黏著面與晶片接觸。 Specifically, the release tape must have a strong adhesiveness, that is, a protective tape which is closely peeled off from the wafer after self-crystallization by heating, and is peeled off from each wafer to remove the protective tape. It will not fall off during the process. Since the tubular protective tape is attached to the wafer, the gap from the wafer is increased, so that when the peeling tape is attached, the adhesive surface of the peeling tape can be prevented from coming into contact with the wafer.
然而,存在因貼附輥之陷入或作業時之剝離帶之鬆弛而導致切晶帶之黏著面與剝離帶之黏著面接著之情形。於該情形時,由於兩接著面牢固地接著,因此無法自晶片上剝離去除保護帶。若在該狀態下強制性地拉伸剝離帶,則由於接著力超過拉伸力,因此亦產生如下問題:切晶帶斷裂,或者對夾在剝離帶與切晶帶之間之晶片作用過大之拉伸力而使其變形或破損。 However, there is a case where the adhesive surface of the dicing tape and the adhesive surface of the peeling tape are followed by the slack of the peeling tape at the time of the sinking of the attaching roller or the operation. In this case, since the two adjoining faces are firmly adhered, the protective tape cannot be peeled off from the wafer. If the peeling tape is forcibly stretched in this state, since the adhesive force exceeds the tensile force, the following problem also occurs: the dicing tape is broken, or the wafer sandwiched between the peeling tape and the dicing tape is excessively applied. Stretching force to deform or break it.
進而,剝離帶若亦接觸或接著於環狀框,則自該環狀框之剝離變得非常困難,而使作業性明顯下降。又,於強行自環狀框剝離之情形時,亦有如下之虞:因用力過大而於環狀框以外之部分產生新的接觸,從而成為無法剝離去除之狀態。 Further, if the release tape is also in contact with or follows the annular frame, peeling from the annular frame becomes extremely difficult, and the workability is remarkably lowered. Further, in the case where the ring frame is forcibly peeled off, there is a case where a new contact is generated in a portion other than the annular frame due to excessive force, and the film cannot be peeled off.
本發明係鑒於此種情況而完成者,其目的在於提供一種可自晶片精度良好地剝離去除藉由切晶處理而分斷成晶片形狀之保護帶的保護帶剝離方法、保護帶剝離裝置及使用於其之剝離帶。 The present invention has been made in view of such circumstances, and an object of the present invention is to provide a protective tape peeling method, a protective tape peeling device, and a use which can peel off and remove a protective tape which is cut into a wafer shape by a dicing process with high precision from a wafer. Stripping tape for it.
因此,本發明為了達成此種目的,而採取如下構成。 Therefore, the present invention has the following constitution in order to achieve such an object.
即,一種保護帶剝離方法,其係自經由支持用黏著帶而保持於環狀框之半導體晶圓剝離保護帶者,且上述方法包含以下過程:第1剝離過程,其係於將附有上述保護帶之半導體晶圓分斷成晶片後,將經由上述黏著帶而保持於環狀框之該晶片加熱,藉此使晶片 形狀之保護帶沿著單軸捲繞成筒狀而自晶片局部性地剝離;貼附過程,其係一面藉由貼附構件按壓相較於與上述半導體晶圓之外周區域對向之部分而於向晶片分佈區域之貼附部分具有強黏著之黏著層的剝離帶,一面將剝離帶至少貼附至該晶片分佈區域;及第2剝離過程,其係藉由剝離上述剝離帶而將捲繞成筒狀之保護帶與該剝離帶一體地自晶片剝離去除。 That is, a protective tape peeling method is a method of peeling a protective tape from a semiconductor wafer held by a support tape by a support tape, and the above method includes the following process: a first peeling process, which is attached to the above After the semiconductor wafer of the protective tape is separated into wafers, the wafer held by the adhesive tape and held in the ring frame is heated, thereby making the wafer The protective tape of the shape is partially detached from the wafer by being uniaxially wound into a cylindrical shape; the attaching process is performed by the attaching member while being pressed against the peripheral portion of the semiconductor wafer by the attaching member. a peeling tape having a strongly adhered adhesive layer attached to a portion of the wafer distribution region, at least one of which is attached to the wafer distribution region; and a second peeling process which is wound by peeling off the peeling tape The tubular protective tape is peeled off from the wafer integrally with the release tape.
根據該方法,剝離帶係相較於與半導體晶圓之外周區域對向之部分而於向晶片分佈區域之貼附部分具有強黏著之黏著層。換言之,該外周區域較晶片分佈區域更低黏著、非黏著、或實施有脫模處理。因此,剝離帶不會接著於在晶圓與環狀框之間露出之黏著帶(切晶帶)之黏著面。由於即便接著,剝離帶之接著力亦較弱,故而可容易地自黏著帶剝離。又,即便剝離帶接著於環狀框,亦可容易地剝離。 According to this method, the peeling tape has an adhesive layer which is strongly adhered to the attachment portion to the wafer distribution region as compared with the portion facing the outer peripheral region of the semiconductor wafer. In other words, the peripheral region is less adhesive, non-adhesive, or has a release treatment than the wafer distribution region. Therefore, the peeling tape does not follow the adhesive face of the adhesive tape (cutting tape) exposed between the wafer and the ring frame. Since the adhesive force of the peeling tape is weak even after that, the tape can be easily peeled off from the adhesive tape. Moreover, even if the peeling tape is attached to the ring frame, it can be easily peeled off.
即,不會產生因剝離帶與黏著帶之密接而導致產生之剝離誤差。又,由於剝離帶可順利地自環狀框剝離,因此亦提高作業效率。 That is, the peeling error caused by the adhesion between the peeling tape and the adhesive tape does not occur. Further, since the peeling tape can be smoothly peeled off from the ring frame, work efficiency is also improved.
再者,於上述方法中,剝離帶亦可預先被切斷成帶狀或環狀框之形狀。 Further, in the above method, the release tape may be cut into a strip shape or a ring frame shape in advance.
例如,於剝離帶為帶狀之情形時,較佳為於第2剝離過程後,捲取回收與保護帶成為一體之剝離帶。 For example, when the release tape is in the form of a belt, it is preferable to take up the release tape which is integrated with the protective tape after the second peeling process.
根據該方法,不會使貼附於剝離帶之複數個保護帶飛散,而可包捲成輥狀。 According to this method, a plurality of protective tapes attached to the peeling tape are not scattered, but can be wound into a roll shape.
又,環狀框之形狀之剝離帶例如能以如下方式利用。本發明之保護帶剝離方法包含切斷過程,該切斷過程係於在重疊於環狀框之剝離用環狀框上貼附剝離帶後,藉由切斷構件將剝離帶裁切成該剝離用環狀框之形狀;於貼附過程中,將貼附於剝離用環狀框之剝離帶貼附至保護帶; 於第2剝離過程中,伴隨著剝離用環狀框之回收,將保護帶與剝離帶一體地自晶片剝離;且本發明之保護帶剝離方法包含第3剝離過程,該第3剝離過程係將保護帶連同剝離帶自經回收之剝離用環狀框剝離去除。 Further, the peeling tape of the shape of the annular frame can be utilized, for example, in the following manner. The protective tape peeling method of the present invention includes a cutting process in which a peeling tape is attached to a peeling annular frame that is superposed on a ring frame, and the peeling tape is cut into the peeling by a cutting member. The shape of the ring frame is used; during the attaching process, the peeling tape attached to the ring frame for peeling is attached to the protective tape; In the second peeling process, the protective tape and the release tape are integrally peeled off from the wafer in association with the recovery of the ring frame for peeling; and the protective tape peeling method of the present invention includes a third peeling process, which will be The protective tape and the peeling tape are peeled off from the recovered peeling ring frame.
或者,於貼附過程中,將貼附有預先被切斷成剝離用環狀框之形狀之剝離帶的該剝離用環狀框重疊於上述環狀框上,從而將該剝離帶貼附於保護帶;於第2剝離過程中,伴隨著剝離用環狀框之回收,將保護帶與剝離帶一體地自晶片剝離;且本發明之保護帶剝離方法包含第3剝離過程,該第3剝離過程係將保護帶連同剝離帶自經回收之剝離用環狀框剝離去除。 Alternatively, in the attaching process, the peeling annular frame to which the peeling tape which has been cut into the shape of the peeling annular frame is attached is superposed on the annular frame, and the peeling tape is attached to the peeling tape. In the second peeling process, the protective tape and the release tape are integrally peeled off from the wafer in association with the recovery of the peeling annular frame; and the protective tape peeling method of the present invention includes a third peeling process, the third peeling In the process, the protective tape and the peeling tape are peeled off from the recovered peeling ring frame.
根據該方法,由於在環狀框上重疊剝離用環狀框,故而可取得自支持用黏著帶之黏著面至剝離帶為止之間隙。因此,可確實地避免剝離帶與黏著帶之接著。 According to this method, since the annular frame for peeling is superposed on the annular frame, the gap from the adhesive surface of the adhesive tape for support to the peeling tape can be obtained. Therefore, it is possible to surely avoid the peeling tape and the adhesive tape.
再者,於上述各方法中,較佳為在貼附過程中自捲繞保護帶之方向貼附剝離帶。 Further, in each of the above methods, it is preferred that the release tape is attached from the direction in which the protective tape is wound during the attaching process.
根據該方法,保護帶係藉由加熱而於晶片上變為筒狀。亦即,利用貼附構件之向移動方向之按壓與捲繞方向一致,故而剝離帶易於彈性變形。因此,可抑制強硬地剝離如使貼附構件自與保護帶難以彈性變形之捲繞方向交叉之方向移動而將剝離帶貼附於保護帶之情形時之保護帶之應力,從而可避免對晶片賦予保護帶所致之擦傷或損傷。 According to this method, the protective tape is formed into a cylindrical shape on the wafer by heating. That is, since the pressing of the attaching member in the moving direction coincides with the winding direction, the peeling tape is easily elastically deformed. Therefore, it is possible to suppress the stress of the protective tape when the adhesive member is moved in a direction in which the attaching member crosses the winding direction in which the protective tape is hard to be elastically deformed, and the peeling tape is attached to the protective tape, thereby avoiding the wafer. Gives scratches or damage caused by the protective tape.
又,本發明為了達成此種目的,而採取如下構成。 Moreover, in order to achieve such an object, the present invention has the following constitution.
即,一種保護帶剝離裝置,其係自經由支持用黏著帶而保持於環狀框之半導體晶圓剝離保護帶者,且上述裝置包含以下構成:保持台,其於將附有上述保護帶之半導體晶圓分斷成晶片後,保持經由上述黏著帶而保持於環狀框之該晶片、及該環狀框; 加熱器,其將上述保持台上之晶片加熱;帶供給部,其朝向環狀框與晶片分佈區域供給帶狀之剝離帶,該帶狀之剝離帶係相較於與上述半導體晶圓之外周區域對向之部分而於貼附至晶片分佈區域之部分具有強黏著之黏著層;貼附機構,其使貼附輥於上述剝離帶上滾動,而將該剝離帶貼附至保護帶與環狀框,該保護帶係藉由加熱器予以加熱而沿著單軸捲繞成筒狀,並且局部性地貼附於晶片;剝離機構,其自晶片剝離貼附上述保護帶而一體化之剝離帶;及帶回收部,其捲取回收上述剝離後之剝離帶。 That is, a protective tape peeling device that is a peeling protection tape for a semiconductor wafer held by a support tape by a support tape, and the device includes the following structure: a holding table to which the protective tape is attached After the semiconductor wafer is divided into wafers, the wafer held by the adhesive tape and held in the annular frame and the annular frame are held; a heater that heats the wafer on the holding stage; a tape supply portion that supplies a strip-shaped peeling tape toward the annular frame and the wafer distribution region, the strip-shaped peeling tape being compared with the semiconductor wafer a portion of the opposite portion of the region that is attached to the wafer distribution region has a strongly adhesive layer; an attaching mechanism that causes the attaching roller to roll on the peeling tape, and attaches the peeling tape to the protective tape and the ring a protective frame which is heated by a heater to be wound into a cylindrical shape along a single axis and partially attached to the wafer; and a peeling mechanism that peels off the protective tape from the wafer and is integrally peeled off And a belt recovery portion that winds up and collects the peeling tape after the peeling.
根據該構成,於對保護帶貼附帶狀之剝離帶時,剝離帶之與半導體晶圓之外周區域對向之部分較晶片分佈區域更為弱黏著或非黏著,因此於半導體晶圓與環狀框之間露出之支持用黏著帶之黏著面與剝離帶會變得難以接著。因此,即便假設黏著帶與剝離帶接著,亦可容易地剝離。 According to this configuration, when the peeling tape of the protective tape is attached, the portion of the peeling tape that is opposite to the peripheral region of the semiconductor wafer is weaker or non-adhesive than the wafer distribution region, and thus the semiconductor wafer and the ring are formed. The adhesive surface of the support adhesive tape exposed between the frames and the peeling tape may become difficult to follow. Therefore, even if the adhesive tape and the peeling tape are followed, the peeling can be easily performed.
又,由於捲取回收與保護帶成為一體之剝離帶,故而可包捲筒狀之保護帶。因此,可防止經剝離之保護帶之飛散。 Further, since the take-up and recovery belt is integrated into the peeling tape, the tubular protective tape can be wrapped. Therefore, scattering of the peeled protective tape can be prevented.
又,本發明為了達成此種目的,而採取如下構成。 Moreover, in order to achieve such an object, the present invention has the following constitution.
即,一種保護帶剝離裝置,其特徵在於:其係自經由支持用黏著帶而保持於環狀框之半導體晶圓剝離保護帶者,且上述裝置包含以下構成,即包括:保持台,其於將附有上述保護帶之半導體晶圓分斷成晶片後,保持經由上述黏著帶而保持於環狀框之該晶片、該環狀框、及與該環狀框重合之剝離用環狀框;加熱器,其將上述保持台上之晶片加熱;帶供給部,其朝向剝離用環狀框供給帶狀之剝離帶,該帶狀之 剝離帶係相較於與上述半導體晶圓之外周區域對向之部分而於貼附至晶片分佈區域之部分具有強黏著之黏著層;貼附機構,其使貼附輥於上述剝離帶上滾動,而貼附至保護帶與剝離用環狀框,該保護帶係藉由加熱器予以加熱而沿著單軸捲繞成筒狀,並且局部性地貼附於晶片;切斷機構,其藉由切斷構件將剝離帶切斷成上述剝離用環狀框之形狀;帶回收部,其回收切斷後之上述剝離帶;剝離機構,其使將保護帶貼附於上述剝離帶後之剝離用環狀框與晶片相對地升降而將保護帶自晶片剝離;及帶回收部,其自上述剝離用環狀框回收剝離帶。 In other words, a protective tape peeling device is characterized in that the protective tape is peeled off from a semiconductor wafer held by a support tape by a support tape, and the device includes the following structure, that is, a holding table After dividing the semiconductor wafer with the protective tape into a wafer, the wafer held by the adhesive tape and held in the annular frame, the annular frame, and a peeling annular frame overlapping the annular frame are held; a heater that heats the wafer on the holding stage; and a tape supply unit that supplies a strip-shaped peeling tape toward the peeling annular frame, the strip-shaped strip The peeling tape has an adhesive layer strongly adhered to a portion attached to the wafer distribution region in a portion opposed to the peripheral region of the semiconductor wafer; and an attaching mechanism that causes the attaching roller to roll on the peeling tape And attached to the protective tape and the peeling annular frame, the protective tape is heated by the heater to be wound into a cylindrical shape along a single axis, and locally attached to the wafer; the cutting mechanism borrows The peeling tape is cut into the shape of the peeling annular frame by the cutting member; the tape collecting portion collects the peeling tape after the cutting, and the peeling mechanism for peeling the protective tape after the peeling tape is attached The annular frame is lifted up and down relative to the wafer to peel the protective tape from the wafer, and a tape collecting portion that collects the peeling tape from the peeling annular frame.
又,本發明為了達成此種目的,而採取如下構成。 Moreover, in order to achieve such an object, the present invention has the following constitution.
即,一種保護帶剝離裝置,其特徵在於:其係自經由支持用黏著帶而保持於環狀框之半導體晶圓剝離保護帶者,且上述裝置包含以下構成,即包括:保持台,其於將附有上述保護帶之半導體晶圓分斷成晶片後,保持經由上述黏著帶而保持於環狀框之該晶片、及該環狀框;加熱器,其將上述保持台上之晶片加熱;搬送機構,其將預先貼附有剝離帶之剝離用環狀框載置於上述保持台上之環狀框,該剝離帶係相較於與上述半導體晶圓之外周區域對向之部分而於貼附至晶片分佈區域之部分具有強黏著之黏著層;貼附機構,其使貼附輥於上述剝離帶上滾動,而貼附至保護帶與剝離用環狀框,該保護帶係藉由加熱器予以加熱而沿著單軸捲繞成筒狀,並且局部性地貼附於晶片;剝離機構,其使將保護帶貼附於上述剝離帶後之剝離用環狀框與晶片相對地升降而將保護帶自晶片剝離;及 帶回收部,其自上述剝離用環狀框捲取回收剝離帶。 In other words, a protective tape peeling device is characterized in that the protective tape is peeled off from a semiconductor wafer held by a support tape by a support tape, and the device includes the following structure, that is, a holding table After the semiconductor wafer with the protective tape is divided into wafers, the wafer held by the adhesive tape and held in the annular frame and the annular frame are held, and the heater heats the wafer on the holding table; a transfer mechanism that attaches a peeling ring frame to which a peeling tape is attached, and a ring frame placed on the holding table, the peeling tape being opposed to a portion facing the outer peripheral region of the semiconductor wafer a portion attached to the wafer distribution region has a strongly adhesive layer; an attaching mechanism that causes the attaching roller to roll on the peeling tape and attach to the protective tape and the peeling annular frame, the protective tape is The heater is heated and wound into a cylindrical shape along a single axis, and is locally attached to the wafer; and a peeling mechanism that lifts and lowers the peeling annular frame after attaching the protective tape to the peeling tape to the wafer And will protect Wafer peeled from the tape; and A belt collecting portion that takes up the peeling tape from the above-mentioned peeling ring frame.
根據上述兩構成,將剝離用環狀框重疊於環狀框,並貼附至該剝離用環狀框而將剝離帶貼附於保護帶,故而可取得自支持用黏著帶之黏著面至剝離帶為止之間隙。因此,可確實地避免黏著帶與剝離帶之接著。 According to the above two configurations, the peeling annular frame is superposed on the annular frame, and is attached to the peeling annular frame to attach the peeling tape to the protective tape, so that the adhesive surface of the self-supporting adhesive tape can be obtained to be peeled off. With the gap. Therefore, the adhesion of the adhesive tape to the peeling tape can be surely avoided.
1‧‧‧晶片 1‧‧‧ wafer
2‧‧‧收縮性膜層 2‧‧‧Shrinkage film
3‧‧‧拘束層 3‧‧‧Detainment
4‧‧‧基材 4‧‧‧Substrate
5‧‧‧黏著層 5‧‧‧Adhesive layer
6‧‧‧黏著層 6‧‧‧Adhesive layer
7‧‧‧晶片分佈區域 7‧‧‧Distribution area
10‧‧‧保持台 10‧‧‧ Keeping the table
11‧‧‧帶供給部 11‧‧‧With the supply department
12‧‧‧貼附單元 12‧‧‧ Attachment unit
13‧‧‧剝離單元 13‧‧‧ peeling unit
14‧‧‧帶回收部 14‧‧With recycling department
15‧‧‧光學感測器 15‧‧‧Optical sensor
16‧‧‧導軌 16‧‧‧rails
17‧‧‧發熱器 17‧‧‧heater
18‧‧‧供給筒管 18‧‧‧Supply bobbin
19‧‧‧剝離輥 19‧‧‧ peeling roll
20‧‧‧隔片回收部 20‧‧‧Separator recycling department
21‧‧‧回收筒管 21‧‧‧Recycling bobbin
22‧‧‧可動框架 22‧‧‧ movable frame
23‧‧‧貼附輥 23‧‧‧ Attachment roller
24‧‧‧導軌 24‧‧‧rail
25‧‧‧馬達 25‧‧‧Motor
26‧‧‧螺桿軸 26‧‧‧ Screw shaft
27‧‧‧剝離輥 27‧‧‧ peeling roller
28‧‧‧進給輥 28‧‧‧feed rolls
29‧‧‧壓輥 29‧‧‧Pressure roller
30‧‧‧馬達 30‧‧‧Motor
31‧‧‧螺桿軸 31‧‧‧ Screw shaft
32‧‧‧筒管 32‧‧‧Bob
33‧‧‧搬送機構 33‧‧‧Transportation agency
35‧‧‧控制部 35‧‧‧Control Department
40‧‧‧剝離用環狀框 40‧‧‧ peeling ring frame
45‧‧‧帶切斷機構 45‧‧‧With cutting mechanism
46‧‧‧支持臂 46‧‧‧Support arm
47‧‧‧切割器單元 47‧‧‧Cutter unit
48‧‧‧切割器 48‧‧‧Cut cutter
50‧‧‧邊緣構件 50‧‧‧Edge components
51‧‧‧貼附輥 51‧‧‧ Attachment roller
DT‧‧‧支持用黏著帶 DT‧‧‧Support adhesive tape
f‧‧‧環狀框 F‧‧‧ ring frame
MF‧‧‧安裝框架 MF‧‧‧ installation framework
PT‧‧‧保護帶 PT‧‧‧protective tape
s‧‧‧隔片 S‧‧‧ spacer
Ts‧‧‧剝離帶 Ts‧‧‧ peeling tape
※為了對發明進行說明,而圖示有目前認為較佳之若干個形態,但應理解發明並不限定於如圖示之構成及對策。 * In order to explain the invention, there are several aspects that are currently considered to be preferable, but it should be understood that the invention is not limited to the configuration and countermeasures as illustrated.
圖1係切晶處理後之安裝框架之立體圖。 Figure 1 is a perspective view of a mounting frame after dicing.
圖2係保護帶之剖面圖。 Figure 2 is a cross-sectional view of the protective tape.
圖3係表示藉由加熱而自晶片剝離之保護帶之立體圖。 Figure 3 is a perspective view showing a protective tape peeled from the wafer by heating.
圖4係剝離帶之仰視圖。 Figure 4 is a bottom view of the peeling tape.
圖5係剝離帶及安裝框架之剖面圖。 Figure 5 is a cross-sectional view of the peeling tape and the mounting frame.
圖6係保護帶剝離裝置之俯視圖。 Figure 6 is a plan view of the protective tape peeling device.
圖7係保護帶剝離裝置之前視圖。 Figure 7 is a front view of the protective tape stripping device.
圖8~圖11係表示保護帶之剝離動作之模式圖。 8 to 11 are schematic views showing the peeling operation of the protective tape.
圖12係表示變化例之保護帶之剝離動作之模式圖。 Fig. 12 is a schematic view showing a peeling operation of a protective tape according to a modification.
圖13~圖19係表示變化例之保護帶之剝離動作之模式圖。 13 to 19 are schematic views showing the peeling operation of the protective tape according to the modification.
圖20~圖21係表示將變化例之剝離帶預先貼附至剝離用環狀框之動作之模式圖。 20 to 21 are schematic views showing the operation of attaching the peeling tape of the modified example to the peeling annular frame in advance.
圖22~圖23係變化例之剝離帶之剖面圖。 22 to 23 are cross-sectional views of a peeling tape of a modification.
以下,參照圖式,對本發明之一實施例進行說明。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
保護帶用以保護形成於半導體晶圓(以下,簡稱為「晶圓」)之表面之電路面。因此,於背面研磨步驟之前,在晶圓表面貼附保護帶。 其後,自背面研磨步驟起至切晶步驟之處理完成為止,於晶圓及切晶後之晶片上貼附有保護帶PT。即,如圖1所示,保護帶PT於安裝框架MF中被切斷成與晶片1相同之形狀。 The protective tape protects the circuit surface formed on the surface of the semiconductor wafer (hereinafter, simply referred to as "wafer"). Therefore, a protective tape is attached to the surface of the wafer before the back grinding step. Thereafter, the protective tape PT is attached to the wafer and the wafer after the dicing from the back grinding step to the completion of the dicing step. That is, as shown in FIG. 1, the protective tape PT is cut into the same shape as the wafer 1 in the mounting frame MF.
又,例如,如圖2所示,保護帶PT包含至少於單軸方向上具有收縮性之收縮性膜層2、及拘束該收縮性膜層2之收縮之拘束層3。保護帶PT係以如下方式構成:藉由賦予加熱等成為收縮原因之刺激,而自發性地自晶圓剝離。即,保護帶PT係於被賦予成為收縮原因之刺激後,自1個端部向1方向自發性地捲繞、或自對向之2個端部朝向中心自發性地捲繞,從而如圖3所示般形成1個或2個筒狀之捲繞體,並且自晶片1剝離。再者,於成為捲繞體之時間點,黏著性並未完全消失,因此局部性地貼附於晶片1。 Further, for example, as shown in FIG. 2, the protective tape PT includes a shrinkable film layer 2 having shrinkability at least in the uniaxial direction, and a restraining layer 3 that restrains shrinkage of the shrinkable film layer 2. The protective tape PT is configured to be spontaneously peeled off from the wafer by imparting stimulation such as heating to shrinkage. In other words, the protective tape PT is spontaneously wound in one direction from one end portion or spontaneously wound from the opposite end portions toward the center after being stimulated to cause contraction. One or two cylindrical wound bodies are formed as shown in FIG. 3, and are peeled off from the wafer 1. Further, since the adhesiveness did not completely disappear at the time of becoming the wound body, it was locally attached to the wafer 1.
剝離帶用以貼附至在切晶步驟後藉由加熱而於各晶片1上成為筒狀之保護帶PT並剝離。 The release tape is attached to the protective tape PT which is formed into a cylindrical shape on each wafer 1 by heating after the dicing step, and is peeled off.
如圖4及圖5所示,剝離帶Ts於基材4上形成有黏著力不同之黏著層5、6。即,如圖4所示,基材4係形成為較經由支持用黏著帶DT(切晶帶)將晶圓接著於環狀框f而成之安裝框架MF之外形更寬幅。該基材4亦可為單片之片狀或帶狀。進而,於利用具有黏著層6之圓形之預切割帶之情形時,基材4係用作載帶(carrier tape)。 As shown in FIGS. 4 and 5, the release tape Ts has adhesive layers 5 and 6 having different adhesion forces on the substrate 4. That is, as shown in FIG. 4, the base material 4 is formed to be wider than the mounting frame MF in which the wafer is attached to the annular frame f via the support adhesive tape DT (cutting tape). The substrate 4 may also be in the form of a single piece or a strip. Further, in the case of using a circular pre-cut tape having the adhesive layer 6, the substrate 4 is used as a carrier tape.
基材4之材料並無特別限定,可使用普通材料。例如,可使用除包含聚對苯二甲酸乙二酯或聚萘二甲酸乙二酯等聚酯基材、聚乙烯或聚丙烯等聚烯烴基材以外,亦包含聚氯乙烯基材、乙烯-乙酸乙烯酯-丙烯酸酯基材、聚醯亞胺基材、聚醯胺基材、金屬、紙等該等中之至少1種以上之單層或複層基材。尤其是聚烯烴基材、聚氯乙烯基材、乙烯-乙酸乙烯酯-丙烯酸酯基材因伸縮性較高,故而就如下方面而言,可較佳地使用:於保護帶為自我捲繞性黏著帶且藉由熱處理而捲 繞化之狀態之情形時,在貼附該剝離帶時,易於追隨捲繞體之形狀,進而可進一步提高黏著性。 The material of the substrate 4 is not particularly limited, and a general material can be used. For example, a polyester substrate including polyethylene terephthalate or polyethylene naphthalate, a polyolefin substrate such as polyethylene or polypropylene, and a polyvinyl chloride-based material and ethylene may be used. A single layer or a multi-layer substrate of at least one of a vinyl acetate-acrylate substrate, a polyimide substrate, a polyamide substrate, a metal, a paper, and the like. In particular, a polyolefin substrate, a polyvinyl chloride-based material, and an ethylene-vinyl acetate-acrylate substrate have high flexibility, and thus can be preferably used in the following aspects: self-winding property of the protective tape Adhesive tape and rolled by heat treatment In the case of the wound state, when the peeling tape is attached, it is easy to follow the shape of the wound body, and the adhesiveness can be further improved.
黏著層5係以成為與於切晶處理後被分斷成複數個之晶片分佈區域7對向之部分之外側的方式形成於基材4。換言之,於與晶圓形狀之外周區域對向之部分形成有該黏著層5。 The adhesive layer 5 is formed on the substrate 4 so as to be separated from the portion on the opposite side of the wafer distribution region 7 after the dicing process. In other words, the adhesive layer 5 is formed on a portion opposite to the peripheral region of the wafer shape.
黏著層5之材料可使用以丙烯酸、天然橡膠、合成橡膠、聚矽氧橡膠為主成分之公知之黏著劑。 As the material of the adhesive layer 5, a known adhesive mainly composed of acrylic acid, natural rubber, synthetic rubber, or polyoxymethylene rubber can be used.
黏著層6係以與晶片分佈區域7對向之方式形成於基材4。該黏著層6與黏著層5相比,由強黏著之黏著劑形成。 The adhesive layer 6 is formed on the substrate 4 so as to face the wafer distribution region 7. The adhesive layer 6 is formed of a strongly adherent adhesive as compared with the adhesive layer 5.
再者,黏著層6較佳為晶圓外形以上之大小。即,存在如下者:於自晶片1剝離保護帶PT之過程中,成為筒狀且完全自晶片1剝離後重新接著。此時,存在保護帶PT略微滾動使方向或位置產生偏移而重新接著於晶片1之情形。根據該現象,於在晶片分佈區域7之外周附近產生有該現象之情形時,保護帶PT有時會略微自該晶片分佈區域7露出。因此,黏著層6較佳為較相當於晶片分佈區域之晶圓外形大數毫米。 Furthermore, the adhesive layer 6 is preferably larger than the outer shape of the wafer. In other words, in the process of peeling off the protective tape PT from the wafer 1, the film is formed into a cylindrical shape and completely peeled off from the wafer 1 and then re-attached. At this time, there is a case where the guard band PT is slightly rolled to shift the direction or position and then re-attach to the wafer 1. According to this phenomenon, when this phenomenon occurs in the vicinity of the outer periphery of the wafer distribution region 7, the protective tape PT may be slightly exposed from the wafer distribution region 7. Therefore, the adhesive layer 6 is preferably a few millimeters larger than the wafer shape corresponding to the wafer distribution area.
此處,黏著層6之黏著力係只要有足夠剝離去除筒狀之保護帶PT之黏著力及黏著性或黏度(黏性)即可。例如,於貼附於不鏽鋼(SUS(Steel Use Stainless,日本不鏽鋼標準)304)之情形時,剝落角度180°、剝落速度300mm/分、室溫環境下之黏著力為2.5N/20mm以上。較佳為3.5N/20mm以上,更佳為7.0N/20mm以上。 Here, the adhesive force of the adhesive layer 6 is sufficient as long as it has sufficient adhesion to remove the adhesive force of the cylindrical protective tape PT and adhesion or viscosity (viscosity). For example, when it is attached to stainless steel (SUS (Steel Use Stainless) 304), the peeling angle is 180°, the peeling speed is 300 mm/min, and the adhesive force at room temperature is 2.5 N/20 mm or more. It is preferably 3.5 N/20 mm or more, more preferably 7.0 N/20 mm or more.
若黏著力未達2.5N/20mm,則無法完全保持自晶片1剝離之保護帶PT而使其下落。 If the adhesion is less than 2.5 N/20 mm, the protective tape PT peeled off from the wafer 1 cannot be completely held and dropped.
黏性必須可於向保護帶PT貼附剝離帶Ts之同時接著保持保護帶PT。黏性於探針黏性測定中為250kN/m2以上,較佳為300kN/m2以上,更佳為350kN/m2以上。於黏性未達250kN/m2之情形時,難以瞬 時地接著保持保護帶PT。 The tackiness must be such that the peeling tape Ts is attached to the protective tape PT while the protective tape PT is held. Viscosity is measured in the viscous probe 250kN / m 2 or more, preferably 300kN / m 2 or more, more preferably 350kN / m 2 or more. In the case where the viscosity is less than 250 kN/m 2 , it is difficult to instantaneously maintain the protective tape PT.
再者,該黏性之測定係根據以下條件而獲得。準備於75mm×20mm之載玻片上貼合有具有與本發明相同之黏著層6之剝離帶Ts者。再者,剝離帶Ts係準備如下者:於該載玻片上貼合有雙面膠帶(日東電工股份有限公司製造之No.5610),且將剝離帶Ts之基材面貼合於該雙面膠帶上。 Further, the measurement of the viscosity was obtained according to the following conditions. A release tape Ts having the same adhesive layer 6 as the present invention was attached to a 75 mm × 20 mm glass slide. In addition, the peeling tape Ts is prepared by attaching a double-sided tape (No. 5610, manufactured by Nitto Denko Corporation) to the slide glass, and bonding the base material of the peeling tape Ts to the double-sided tape. On the tape.
評估裝置為黏性(Tacking)試驗機(RHESCA股份有限公司製造,TAC-II)。該評估裝置之條件及設定等為:探針之材質:SUS304、探針之直徑:5mm、探針壓入速度:30mm/分、探針提拉速度:30mm/分、加壓負載:100gf、加壓時間:3秒、及測定溫度:23℃。 The evaluation device was a Tacking tester (manufactured by RHESCA Co., Ltd., TAC-II). The conditions and settings of the evaluation device are: probe material: SUS304, probe diameter: 5mm, probe pressing speed: 30mm/min, probe pulling speed: 30mm/min, pressurized load: 100gf, Pressurization time: 3 seconds, and measurement temperature: 23 °C.
在該條件下測定垂直地提拉與黏著層6之表面接觸之探針時之最大負載,並求出n=10之平均值作為探針黏性值。 Under this condition, the maximum load when the probe in contact with the surface of the adhesive layer 6 was pulled vertically was measured, and the average value of n = 10 was determined as the probe viscosity value.
又,為了確實地接著保持變形為筒狀之保護帶,較理想為使黏著層6以追隨於保護帶PT之形狀之方式變形。因此,為了產生此種變形,黏著層6之厚度×楊氏模數之值為5×10-3~3×103N/m之範圍,較佳為1.5×10-2~2.3×103N/m之範圍,更佳為3×10-2~1.5×103N/m之範圍。 Further, in order to reliably hold the protective tape which is deformed into a tubular shape, it is preferable that the adhesive layer 6 is deformed so as to follow the shape of the protective tape PT. Therefore, in order to cause such deformation, the thickness of the adhesive layer 6 × Young's modulus is in the range of 5 × 10 -3 to 3 × 10 3 N / m, preferably 1.5 × 10 -2 to 2.3 × 10 3 The range of N/m is more preferably in the range of 3 × 10 -2 to 1.5 × 10 3 N/m.
於黏著層6之厚度×楊氏模數之值未達5×10-3N/m之情形時,有如下之虞:黏著層6之變形變得過大,且亦與保護帶PT之下方之晶片表面接觸,從而無法僅回收保護帶PT。 In the case where the thickness of the adhesive layer 6 and the Young's modulus are less than 5 × 10 -3 N/m, there is a case where the deformation of the adhesive layer 6 becomes excessively large and is also below the protective tape PT. The wafer surface is in contact, so that it is not possible to recover only the protective tape PT.
若黏著層6之厚度×楊氏模數之值超過3×103N/m,則變形不充分,向保護帶PT之密接性低,而無法實現良好之剝離去除。 When the thickness of the adhesive layer 6 × the Young's modulus exceeds 3 × 10 3 N/m, the deformation is insufficient, and the adhesion to the protective tape PT is low, and good peeling removal cannot be achieved.
黏著層6之厚度為5~2000μm之範圍,較佳為15~1500μm之範圍,更佳為30~1000μm之範圍。又,該黏著層6之黏著劑之楊氏模數(於23℃之環境下,拉伸速度為50mm/分)為0.001~1.5MPa之範圍。 The thickness of the adhesive layer 6 is in the range of 5 to 2000 μm, preferably in the range of 15 to 1500 μm, more preferably in the range of 30 to 1000 μm. Further, the Young's modulus of the adhesive of the adhesive layer 6 (the stretching speed is 50 mm/min in an environment of 23 ° C) is in the range of 0.001 to 1.5 MPa.
再者,楊氏模數之測定係根據以下條件而獲得。於測定裝置: 拉力型(Tensilon)萬能試驗機(ORIENTEC股份有限公司製造,RTC-1150A)、拉伸速度:50mm/分、夾頭間距離:10mm、測定溫度:23℃之環境下,將50mm×50mm之黏著層6捲成棒狀而獲得試樣。以10mm之夾頭間距離安裝試樣,並以50mm/分拉伸,藉此獲得應力-應變相關之測定值。對應變為0.2%與0.45%之2個點求出應力而獲得楊氏模數。對同一試樣重複進行5次該測定,採用其平均值。 Further, the Young's modulus was measured in accordance with the following conditions. For the measuring device: Tensilon universal testing machine (manufactured by ORIENTEC Co., Ltd., RTC-1150A), tensile speed: 50mm/min, distance between chucks: 10mm, measuring temperature: 23°C, 50mm×50mm The layer 6 was rolled into a rod shape to obtain a sample. The sample was mounted at a distance of 10 mm between the chucks and stretched at 50 mm/min, thereby obtaining stress-strain related measurements. The Young's modulus was obtained by obtaining stress at two points of 0.2% and 0.45%. This measurement was repeated 5 times for the same sample, and the average value thereof was used.
本實施例之保護帶剝離裝置係於對貼附有上述保護帶PT之狀態之晶圓W進行切晶處理後,如圖1所示般向分佈有經由支持用黏著帶DT而接著保持於環狀框f之複數個晶片1之晶片分佈區域7貼附上述剝離帶Ts而進行剝離。 The protective tape peeling apparatus of the present embodiment is subjected to a dicing treatment on the wafer W in a state in which the protective tape PT is attached, and then distributed in the direction of the support tape DT and then held in the ring as shown in FIG. The wafer distribution area 7 of the plurality of wafers 1 of the frame f is attached to the peeling tape Ts to be peeled off.
圖6係表示本發明之一實施例之保護帶剝離裝置之整體構成的俯視圖,圖7係其前視圖。 Fig. 6 is a plan view showing the entire configuration of a protective tape peeling device according to an embodiment of the present invention, and Fig. 7 is a front view thereof.
保護帶剝離裝置包括保持台10、帶供給部11、貼附單元12、剝離單元13、帶回收部14、及光學感測器15等。 The protective tape peeling device includes a holding table 10, a tape supply portion 11, a attaching unit 12, a peeling unit 13, a tape collecting portion 14, an optical sensor 15, and the like.
保持台10吸附保持安裝框架MF。又,保持台10構成為可藉由驅動機構而沿著敷設於安裝框架MF之載置位置與剝離帶Ts之貼附位置之間之導軌16往返移動。又,於保持台10中埋設有發熱器17。再者,發熱器17相當於本發明之加熱器。 The holding table 10 adsorbs and holds the mounting frame MF. Further, the holding table 10 is configured to be reciprocally movable along the guide rail 16 between the mounting position of the mounting frame MF and the attaching position of the peeling tape Ts by the driving mechanism. Further, a heater 17 is embedded in the holding table 10. Further, the heater 17 corresponds to the heater of the present invention.
如圖7所示,帶供給部11將自供給筒管18陸續送出之附有隔片s之剝離帶Ts導引至剝離輥19。剝離輥19捲繞導引隔片s並將其自剝離帶Ts剝離,而引導至隔片回收部20。因此,帶供給部11係以將已剝離隔片s之剝離帶Ts引導至貼附單元12之方式構成。 As shown in FIG. 7, the tape supply unit 11 guides the peeling tape Ts attached to the separator s from the supply bobbin 18 to the peeling roller 19. The peeling roller 19 winds the guide spacer s and peels it from the peeling tape Ts, and guides it to the spacer collecting portion 20. Therefore, the tape supply unit 11 is configured to guide the peeling tape Ts of the peeled spacer s to the attaching unit 12.
供給筒管18係連動地連結於電磁制動器而被施加適當之旋轉阻力,從而防止陸續送出過多之帶。 The supply bobbin 18 is coupled to the electromagnetic brake in conjunction with the electromagnetic brake to apply appropriate rotational resistance, thereby preventing the excessive feeding of the belt.
隔片回收部20具備捲取自剝離帶Ts剝離之隔片s之回收筒管21, 且由馬達旋轉驅動控制。 The separator collecting unit 20 includes a collecting bobbin 21 that winds up the separator s stripped from the peeling tape Ts, And controlled by motor rotation drive.
貼附單元12中包括可藉由缸等致動器而於裝設於可動台之可動框架22上升降之貼附輥23。又,貼附單元12其整體以可沿著導軌24水平移動之方式受到支持,並且由利用馬達25正反旋轉驅動之螺桿軸26往返地進行螺桿進給驅動。再者,貼附單元12相當於本發明之貼附機構。 The attaching unit 12 includes an attaching roller 23 that can be lifted and lowered on the movable frame 22 attached to the movable table by an actuator such as a cylinder. Further, the attaching unit 12 is supported in such a manner as to be horizontally movable along the guide rails 24, and is screw-fed and driven by the screw shaft 26 driven by the motor 25 in forward and reverse rotation. Furthermore, the attaching unit 12 corresponds to the attaching mechanism of the present invention.
於剝離單元13具備剝離輥27。又,該剝離單元13整體以可沿著導軌24水平移動之方式受到支持,並且藉由利用馬達30正反旋轉驅動之螺桿軸31而往返地進行螺桿進給驅動。於該剝離單元13之下游側具備受馬達驅動之進給輥28及壓輥29。再者,剝離單元13相當於本發明之剝離機構。 The peeling unit 13 is provided with a peeling roller 27. Further, the entire peeling unit 13 is supported so as to be horizontally movable along the guide rails 24, and the screw feed drive is reciprocally driven by the screw shaft 31 driven by the motor 30 in the forward and reverse rotation. On the downstream side of the peeling unit 13, a feed roller 28 and a pressure roller 29 driven by a motor are provided. Further, the peeling unit 13 corresponds to the peeling mechanism of the present invention.
帶回收部14將貼附有藉由剝離單元13而剝離之保護帶PT之剝離帶Ts捲取回收至筒管32。 The tape collecting portion 14 winds up and collects the peeling tape Ts to which the protective tape PT peeled off by the peeling unit 13 is attached, to the bobbin 32.
光學感測器15係配備於貼附位置之上方。該光學感測器15包括相機或光感測器等。因此,光學感測器15一面監控剝離帶Ts之黏著層6之位置,一面將該監控時之圖像資料發送至控制部35。 The optical sensor 15 is mounted above the attachment position. The optical sensor 15 includes a camera or a photo sensor or the like. Therefore, the optical sensor 15 monitors the position of the adhesive layer 6 of the peeling tape Ts, and transmits the image data at the time of monitoring to the control unit 35.
控制部35基於自光學感測器15發送之圖像資料,控制帶供給部11之作動,從而以剝離帶Ts之黏著層6與晶片分佈區域7重合之方式控制剝離帶Ts之陸續送出。 The control unit 35 controls the operation of the tape supply unit 11 based on the image data transmitted from the optical sensor 15, and controls the peeling of the peeling tape Ts so that the adhesive layer 6 of the peeling tape Ts overlaps the wafer distribution region 7.
其次,基於圖7至11,對上述實施例裝置說明循環一輪之動作。 Next, based on Figs. 7 to 11, the operation of the above-described embodiment will be explained.
於位於載置位置之保持台10,藉由圖6所示之搬送機構33載置切晶處理後之安裝框架MF。吸附保持有安裝框架MF之保持台10向貼附位置移動。此時,如圖7所示,貼附單元12與剝離單元13位於左側之初始位置。 The mounting frame MF after the dicing process is placed on the holding table 10 at the mounting position by the conveying mechanism 33 shown in FIG. The holding table 10 holding the mounting frame MF is moved to the attached position. At this time, as shown in FIG. 7, the attaching unit 12 and the peeling unit 13 are located at the initial position on the left side.
若保持台10到達至貼附位置,則使發熱器17作動而使保護帶PT成為筒狀並自晶片1剝離。此時,保護帶PT係於其中心之接觸部位局 部性地貼附於晶片1。 When the holding table 10 reaches the attaching position, the heater 17 is actuated to cause the protective tape PT to be cylindrical and peeled off from the wafer 1. At this time, the protective tape PT is attached to the contact portion of the center thereof. Attached to the wafer 1 in part.
若完成利用發熱器17之加熱處理,則使缸作動而使壓輥29下降,從而與進給輥28握持剝離帶Ts。 When the heat treatment by the heater 17 is completed, the cylinder is actuated to lower the pressure roller 29, and the peeling tape Ts is held by the feed roller 28.
其次,如圖8所示,使貼附輥23下降,並且貼附單元12前進移動。伴隨著貼附輥23之移動而按壓剝離帶Ts。因此,黏著層5被貼附至環狀框f,並且逐漸被貼附至晶片分佈區域7。 Next, as shown in FIG. 8, the attaching roller 23 is lowered, and the attaching unit 12 is moved forward. The peeling tape Ts is pressed along with the movement of the attaching roller 23. Therefore, the adhesive layer 5 is attached to the annular frame f, and is gradually attached to the wafer distribution region 7.
如圖9所示,若貼附單元12到達至超過保持台10之結束位置,則剝離單元13作動。亦即,解除壓輥29對剝離帶Ts之握持,剝離單元13整體移動至剝離作業之結束位置。此時,弱黏著之黏著層5之部分容易地自環狀框f剝離。由於強黏著之黏著層6之部分密接於保護帶PT,故而該保護帶PT逐漸自晶片1剝離。 As shown in FIG. 9, when the attaching unit 12 reaches the end position beyond the holding table 10, the peeling unit 13 is actuated. That is, the holding of the peeling tape Ts by the pressing roller 29 is released, and the peeling unit 13 as a whole is moved to the end position of the peeling operation. At this time, the portion of the weakly adhered adhesive layer 5 is easily peeled off from the ring frame f. Since the portion of the strongly adhered adhesive layer 6 is in close contact with the protective tape PT, the protective tape PT is gradually peeled off from the wafer 1.
如圖10所示,若剝離單元13到達至超過保持台10之結束位置,則帶回收部14捲取回收剝離帶Ts,並且自帶供給部11陸續送出特定長度之剝離帶Ts。同時,如圖11所示,剝離單元13與貼附單元12返回至初始位置。 As shown in FIG. 10, when the peeling unit 13 reaches the end position beyond the holding stage 10, the tape collecting portion 14 winds up the recovered peeling tape Ts, and the tape feeding portion 11 successively feeds the peeling tape Ts of a specific length. At the same time, as shown in FIG. 11, the peeling unit 13 and the attaching unit 12 return to the initial position.
進而,保持台10自貼附位置移動至載置位置。其後,搬出已完成保護帶剝離之安裝框架MF。 Further, the holding table 10 is moved from the attaching position to the placing position. Thereafter, the mounting frame MF in which the protective tape is peeled off is carried out.
根據以上內容完成實施例裝置之一輪之動作,之後重複進行相同之動作直至達到特定片數為止。 The action of one of the embodiments of the embodiment is completed in accordance with the above, and then the same action is repeated until a certain number of slices is reached.
根據上述實施例裝置,與晶片分佈區域7之外側之區域對向之剝離帶Ts之黏著層5較貼附至晶片分佈區域7之黏著層6更弱黏著。即便於自晶片分佈區域7之外周至環狀框f之間露出之黏著帶DT之黏著面與剝離帶Ts接觸,亦不會牢固地接著。因此,可容易地自黏著帶DT剝離該剝離帶Ts。又,由於黏著層5之部分亦貼附於環狀框f,故而亦可容易地自該環狀框f剝離。因此,不會產生剝離誤差,亦可提高剝離處理之作業效率。 According to the apparatus of the above embodiment, the adhesive layer 5 of the peeling tape Ts opposed to the region on the outer side of the wafer distribution region 7 is weaker adhered to the adhesive layer 6 attached to the wafer distribution region 7. That is, the adhesive surface of the adhesive tape DT exposed between the outer periphery of the wafer distribution region 7 and the annular frame f is easily brought into contact with the peeling tape Ts, and does not firmly follow. Therefore, the peeling tape Ts can be easily peeled off from the adhesive tape DT. Further, since the portion of the adhesive layer 5 is also attached to the annular frame f, it can be easily peeled off from the annular frame f. Therefore, the peeling error does not occur, and the work efficiency of the peeling process can also be improved.
又,由於為弱黏著之黏著層5之部分貼附於環狀框f,因此亦可容易地自該環狀框f剝離。 Further, since the portion of the adhesive layer 5 which is weakly adhered is attached to the annular frame f, it can be easily peeled off from the annular frame f.
再者,本發明亦能夠以如下之形態實施。 Furthermore, the present invention can also be implemented in the following forms.
(1)於上述實施例裝置中,如圖12所示,例如亦可重疊與環狀框f相同形狀之剝離用環狀框40而貼附剝離帶Ts。即,如圖13所示,跨及剝離用環狀框40與保護帶PT而貼附剝離帶Ts。當貼附處理完成時,如圖14所示,將剝離帶Ts自剝離用環狀框40剝離。其後,如圖15所示,將保護帶PT與該剝離帶Ts一體地自晶片1剝離,並捲取回收至帶回收部14。 (1) In the apparatus of the above-described embodiment, as shown in FIG. 12, for example, the peeling tape Ts may be attached to the peeling annular frame 40 having the same shape as the annular frame f. That is, as shown in FIG. 13, the peeling tape Ts is attached across the peeling ring frame 40 and the protective tape PT. When the attaching process is completed, as shown in FIG. 14, the peeling tape Ts is peeled off from the peeling annular frame 40. Thereafter, as shown in FIG. 15, the protective tape PT is peeled off from the wafer 1 integrally with the peeling tape Ts, and is taken up and recovered in the tape collecting portion 14.
又,作為另一實施形態,於在重合於環狀框f之剝離用環狀框40與保護帶PT上貼附剝離帶Ts後,於剝離用環狀框40上,將剝離帶Ts裁切成圓形。其後,亦可連同剝離用環狀框40剝離回收保護帶PT。 Further, in another embodiment, after the peeling tape Ts is attached to the peeling annular frame 40 and the protective tape PT which are superposed on the annular frame f, the peeling tape Ts is cut on the peeling annular frame 40. In a circle. Thereafter, the protective tape PT may be peeled off together with the peeling annular frame 40.
於實現該剝離方法之情形時,例如設為於上述實施例裝置中包括帶切斷機構之構成。即,如圖16所示,於貼附位置之上方配備可升降之帶切斷機構45。 In the case of realizing the peeling method, for example, it is assumed that the apparatus of the above-described embodiment includes a belt cutting mechanism. That is, as shown in FIG. 16, the ejectable belt cutting mechanism 45 is provided above the attachment position.
帶切斷機構45經由支持臂46而具備切割器單元47,該支持臂46係於自可沿縱框架升降之可動台懸臂支持之臂之前端下部沿直徑方向延伸。切割器單元47係以使刀尖朝下之圓刀之切割器48可遊轉之方式裝設。 The tape cutting mechanism 45 is provided with a cutter unit 47 via a support arm 46, and the support arm 46 is diametrically extended in a lower portion of the front end of the arm supported by the movable table cantilevered up and down along the vertical frame. The cutter unit 47 is mounted in such a manner that the cutter 48 of the round knife with the blade tip facing downward can be swung.
切割器單元47可圍繞與保持台10相同之軸心旋轉。再者,切割器單元47構成為可經由支持臂46調整回旋半徑。 The cutter unit 47 is rotatable about the same axis as the holding table 10. Furthermore, the cutter unit 47 is configured to adjust the radius of gyration via the support arm 46.
因此,於該變化例裝置之情形時,在跨及環狀框f與晶片分佈區域7貼附剝離帶Ts後,使切割器單元47下降至切割器48可按壓並切斷剝離帶Ts之高度。於該狀態下,如圖17所示般使切割器48於剝離用環狀框40上回旋而切斷剝離帶Ts。 Therefore, in the case of the device of the variation, after the peeling tape Ts is attached across the annular frame f and the wafer distribution region 7, the cutter unit 47 is lowered to the height at which the cutter 48 can press and cut the peeling tape Ts. . In this state, as shown in FIG. 17, the cutter 48 is rotated on the peeling annular frame 40, and the peeling tape Ts is cut.
若剝離帶Ts之切斷完成,則使切割器單元47返回至上方之待機位 置,並使剝離單元13作動。若剝離單元13與上述變化例同樣地到達至超過圖18所示之保持台10之結束位置,則帶回收部14捲取回收剝離帶Ts,並且自帶供給部11陸續送出特定長度之剝離帶Ts。同時,如圖19所示,剝離單元13與貼附單元12返回至初始位置。 If the cutting of the peeling tape Ts is completed, the cutter unit 47 is returned to the upper standby position. And the peeling unit 13 is actuated. When the peeling unit 13 reaches the end position beyond the holding table 10 shown in FIG. 18 in the same manner as the above-described modification, the tape collecting portion 14 winds up the recovered peeling tape Ts, and the tape feeding portion 11 successively feeds the peeling tape of a specific length. Ts. At the same time, as shown in FIG. 19, the peeling unit 13 and the attaching unit 12 return to the initial position.
進而,保持台10自貼附位置移動至載置位置。於載置位置上,在搬出貼附有重疊於環狀框f之剝離帶Ts之剝離用環狀框40後,搬出已完成保護帶剝離之安裝框架MF。 Further, the holding table 10 is moved from the attaching position to the placing position. At the mounting position, the peeling annular frame 40 which is attached to the peeling tape Ts of the annular frame f is carried out, and then the mounting frame MF from which the protective tape has been peeled off is carried out.
再者,剝離帶Ts係於其他步驟等中自剝離用環狀框40剝離去除,其後再利用該剝離用環狀框40。 In addition, the peeling tape Ts is peeled off from the peeling annular frame 40 in another step or the like, and the peeling annular frame 40 is used later.
(2)於如上述變化例般利用剝離用環狀框40之情形時,亦能夠以於該剝離用環狀框40上預先貼附有剝離帶Ts之狀態與環狀框f重合。關於剝離帶Ts向剝離用環狀框40之貼附,亦可藉由其他裝置貼附帶狀之剝離帶Ts而於該剝離用環狀框40上裁切成圓形。或者,亦可將圓形之預切割型剝離帶Ts貼附至剝離用環狀框40。 (2) When the peeling annular frame 40 is used as in the above-described modification, the peeling tape Ts may be attached to the peeling annular frame 40 in advance in a state in which the annular frame f is superposed. The peeling tape Ts is attached to the peeling annular frame 40, and the peeling tape Ts attached thereto may be attached to the peeling annular frame 40 to be rounded. Alternatively, a circular pre-cut type peeling tape Ts may be attached to the peeling annular frame 40.
即,如圖20及圖21所示,藉由邊緣構件50反折載帶4,而剝離以特定間距形成於該載帶上之剝離帶Ts。藉由貼附輥51按壓該剝離帶Ts之前端而貼附至剝離用環狀框40。其後,一面使保持台與將剝離帶Ts自載帶4剝離之速度同步地移動,一面逐漸將該剝離帶Ts貼附至剝離用環狀框40。 That is, as shown in FIGS. 20 and 21, the carrier tape 4 is folded by the edge member 50, and the peeling tape Ts formed on the carrier tape at a specific pitch is peeled off. The front end of the peeling tape Ts is pressed by the attaching roller 51 and attached to the peeling annular frame 40. Thereafter, the holding stage is moved in synchronization with the speed at which the peeling tape Ts is peeled off from the carrier tape 4, and the peeling tape Ts is gradually attached to the peeling annular frame 40.
(3)於上述變化例中,剝離帶Ts之黏著層6亦可為紫外線硬化型、或藉由加熱而發砲膨脹從而使接著力降低或消失之黏著劑。藉由利用該剝離帶Ts,可藉由在剝離保護帶PT後對黏著層5進行加熱或照射紫外線而使接著力消失,從而可容易地自環狀框f剝離去除剝離帶Ts。因此,可使剝離用環狀框40之循環利用變得容易。 (3) In the above modification, the adhesive layer 6 of the peeling tape Ts may be an ultraviolet curing type or an adhesive which is expanded by heating to lower or eliminate the adhesive force. By using the peeling tape Ts, the adhesive layer 5 can be heated or irradiated with ultraviolet rays after the protective tape PT is peeled off, and the adhesive force can be eliminated, whereby the peeling tape Ts can be easily peeled off from the ring frame f. Therefore, recycling of the peeling annular frame 40 can be facilitated.
(4)上述各實施例之剝離帶Ts之黏著層5之部分亦可不具有黏著劑。即,如圖22所示,黏著層6之周圍呈基材1之背面露出之狀態。 (4) The portion of the adhesive layer 5 of the release tape Ts of each of the above embodiments may not have an adhesive. That is, as shown in FIG. 22, the periphery of the adhesive layer 6 is in a state in which the back surface of the base material 1 is exposed.
(5)如圖23所示,上述各實施例之剝離帶Ts之黏著層5之部分的厚度亦可薄於黏著層6之部分。根據該構成,可取得自晶片分佈區域7之外側之黏著帶DT之黏著面至剝離帶Ts為止之間隙。因此,於將剝離帶Ts貼附至保護帶PT時,可更準確地避免黏著帶DT與剝離帶Ts之接著。 (5) As shown in Fig. 23, the thickness of the portion of the adhesive layer 5 of the release tape Ts of each of the above embodiments may be thinner than the portion of the adhesive layer 6. According to this configuration, the gap from the adhesive surface of the adhesive tape DT on the outer side of the wafer distribution region 7 to the peeling tape Ts can be obtained. Therefore, when the peeling tape Ts is attached to the protective tape PT, the adhesion of the adhesive tape DT and the peeling tape Ts can be more accurately avoided.
※本發明可在不脫離其思想或本質之前提下以其他具體之形態實施,因此,作為表示發明之範圍者,應參照附加之申請專利範圍,而非以上之說明。 The present invention can be implemented in other specific forms without departing from the spirit and scope of the invention. Therefore, the scope of the invention should be referred to in the appended claims.
10‧‧‧保持台 10‧‧‧ Keeping the table
12‧‧‧貼附單元 12‧‧‧ Attachment unit
13‧‧‧剝離單元 13‧‧‧ peeling unit
23‧‧‧貼附輥 23‧‧‧ Attachment roller
24‧‧‧導軌 24‧‧‧rail
f‧‧‧環狀框 F‧‧‧ ring frame
PT‧‧‧保護帶 PT‧‧‧protective tape
Ts‧‧‧剝離帶 Ts‧‧‧ peeling tape
Claims (10)
Applications Claiming Priority (1)
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JP2012188883A JP2014049485A (en) | 2012-08-29 | 2012-08-29 | Protective tape exfoliation method, protective tape exfoliation device, and exfoliation tape used for protective tape exfoliation device |
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Publication Number | Publication Date |
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TW201417158A true TW201417158A (en) | 2014-05-01 |
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TW102129539A TW201417158A (en) | 2012-08-29 | 2013-08-16 | Method and apparatus for separating protective tape and separation tape used for the same |
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JP (1) | JP2014049485A (en) |
KR (1) | KR20140029229A (en) |
CN (1) | CN103681434A (en) |
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TWI810862B (en) * | 2022-03-24 | 2023-08-01 | 南茂科技股份有限公司 | Workpiece carrier |
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WO2021241935A1 (en) * | 2020-05-25 | 2021-12-02 | (주) 엔지온 | Semiconductor chip delamination device and control method therefor |
KR102440739B1 (en) * | 2020-05-25 | 2022-09-07 | (주) 엔지온 | An apparatus for manufacturing semiconductor with a chip-level delamination of protection film |
KR102440741B1 (en) * | 2020-05-25 | 2022-09-07 | (주) 엔지온 | Method for controlling an apparatus for manufacturing semiconductor with a chip-level delamination of protection film |
KR102456864B1 (en) * | 2020-08-18 | 2022-10-21 | (주) 엔지온 | An apparatus for manufacturing semiconductor with a chip-level delamination of protection film |
-
2012
- 2012-08-29 JP JP2012188883A patent/JP2014049485A/en active Pending
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2013
- 2013-08-16 TW TW102129539A patent/TW201417158A/en unknown
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TWI810862B (en) * | 2022-03-24 | 2023-08-01 | 南茂科技股份有限公司 | Workpiece carrier |
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JP2014049485A (en) | 2014-03-17 |
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