TW201411833A - Display unit, manufacturing method thereof and electronic device - Google Patents

Abstract

The present invention discloses a display unit comprising a display device comprising a light-emitting layer between a first electrode and a second electrode and comprising a resonator structure for resonating light between the plurality of interfaces, the Light is generated in the luminescent layer. The display device includes a multilayer film in which a high refractive index film and a low refractive index film are alternately laminated, the multilayer film is disposed on an outer side of one of the second electrodes, and the resonator structure has a side on the first electrode side a first interface, a second interface on the second electrode side, and one or more additional interfaces, the one or more additional interfaces being disposed on the high refractive index film and the low refractive index film of the multilayer film between.

Description

Display unit, manufacturing method thereof and electronic device

The present invention relates to a display unit using an organic electroluminescence (EL) device, a method of fabricating the display unit, and an electronic device.

An organic EL device has an organic layer comprising an illuminating layer between a first electrode and a second electrode. In the organic EL device, a first interface is disposed on the first electrode side and a second interface is disposed on the second electrode side, and light is introduced in the first interface and the second Resonating one of the resonator structures between the interfaces increases the luminous efficiency in the front direction. However, when a light-emitting surface is viewed diagonally, one of the wavelengths of the light is significantly shifted, and the viewing angle dependency of the light-emitting property is enhanced.

In order to avoid this disadvantage, it has been proposed, for example, in Japanese Unexamined Patent Application Publication No. 2011-159431, that a transparent layer is disposed between the second electrode and the organic layer; and a third interface is introduced into the transparent layer and the organic layer. between.

[reference list] [Patent Literature] [PTL 1]

JP-A-2011-159431

In JP-A-2011-159431, the viewing angle dependence can be reduced by adjusting an optical distance between the first interface and the third interface and adjusting an optical distance between the first interface and the second interface. However, in the configuration in which the transparent layer is disposed between the second electrode and the organic layer (as disclosed in JP-A-2011-159431), there is a limit to the further increase in the number of interfaces, and there is room for further improvement.

It is desirable to provide a display unit capable of improving design flexibility and more easily reducing viewing angle dependence, a method of manufacturing the display unit, and an electronic device.

According to an embodiment of the present invention, a display unit includes a display device including a light emitting layer between a first electrode and a second electrode and including light for resonating between the plurality of interfaces A resonator structure in which the light is generated. The display device includes a multilayer film in which a high refractive index film and a low refractive index film are alternately laminated, the multilayer film is disposed on an outer side of one of the second electrodes, and the resonator structure has a side on the first electrode side a first interface, a second interface on the second electrode side, and one or more additional interfaces, the one or more additional interfaces being disposed on the high refractive index film and the low refractive index film of the multilayer film between.

In the display unit according to the above embodiment of the present invention, the multilayer film in which the high refractive index film and the low refractive index film are alternately laminated is disposed on the outer side of the second electrode. Further, one or more additional interfaces are disposed between the high refractive index film and the low refractive index film of the multilayer film. Therefore, the flexibility of the design is improved, and it is easy to adjust one of the monochromatic rays to balance when combining two or more monochromatic rays (for example, R, G, and B) to be emitted. Therefore, the relative change in the viewing angle attributed to the three color values X, Y, and Z of the combined light is coherent, and a color shift is suppressed. In particular, it suppresses the color shift of one of the white light that is easily perceived.

According to an embodiment of the present invention, there is provided a method of fabricating a display unit including a display device, the display device comprising a light-emitting layer between a first electrode and a second electrode, and including light in a plurality of One resonator structure between the interfaces, the light production Born in the luminescent layer. The method includes: forming the first electrode, the light emitting layer and the second electrode, and forming a first interface of the resonator structure on the first electrode side and forming the resonator on the second electrode side a second interface of the structure; and forming a multilayer film in which the high refractive index film and the low refractive index film are alternately laminated, the multilayer film being disposed on one of the outer sides of the second electrode, and also forming the resonator structure One or more additional interfaces, the one or more additional interfaces being formed between the high refractive index film of the multilayer film and the low refractive index film.

According to an embodiment of the invention, an electronic device including a display unit is provided. The display unit comprises a display device comprising a light-emitting layer between a first electrode and a second electrode and also comprising a resonator structure for resonating light between the plurality of interfaces, the light being generated in the light-emitting layer in. The display device includes a multilayer film in which a high refractive index film and a low refractive index film are alternately laminated, the multilayer film is disposed on an outer side of one of the second electrodes, and the resonator structure has a side on the first electrode side a first interface, a second interface on the second electrode side, and one or more additional interfaces, the one or more additional interfaces being disposed on the high refractive index film and the low refractive index film of the multilayer film between.

In the electronic apparatus according to the above-described embodiment of the present invention, the display unit according to the above-described embodiment of the present invention displays an image in which the viewing angle dependency is lowered.

According to the display unit of the above embodiment of the present invention or the electronic device of the above-described embodiment of the present invention, the multilayer film in which the high refractive index film and the low refractive index film are alternately laminated is disposed on the outer side of the second electrode. Further, one or more additional interfaces are disposed between the high refractive index film and the low refractive index film of the multilayer film. Therefore, it is allowed to increase the flexibility of the design and to allow the viewing angle dependency to be more easily reduced.

A method of manufacturing a display unit according to the above embodiment of the present invention, wherein a multilayer film in which a high refractive index film and a low refractive index film are alternately laminated is formed on the outer side of the second electrode. In addition, one or more additional interfaces are formed on the high refractive index film and the low refractive index film of the multilayer film between. Therefore, the display unit according to the above embodiment of the present invention is allowed to be easily manufactured.

The above general description and the following detailed description are to be considered as illustrative and illustrative

3A‧‧‧Sampling transistor

3B‧‧‧Drive transistor

3C‧‧‧protective capacitor

3D‧‧‧Lighting device

3H‧‧‧ Grounding Wiring

10‧‧‧Substrate

10R, 10G, 10B, 10W‧‧‧ organic EL devices

11‧‧‧ lower electrode

12‧‧‧Upper electrode

13‧‧‧Organic layer

13A‧‧‧ hole injection layer and hole transmission layer

13B‧‧‧Lighting layer

13C‧‧‧Electron transport layer and electron injection layer

14‧‧‧First lighting unit

14A‧‧‧ hole injection layer and hole transmission layer

14B‧‧‧First luminescent layer

14C‧‧‧Electronic transport layer

15‧‧‧ Charge generation layer

16‧‧‧second lighting unit

16A‧‧‧ hole injection layer and hole transport layer

16B‧‧‧second luminescent layer

16C‧‧‧Electronic transport layer and electron injection layer

20‧‧‧Multilayer film

21‧‧‧ first floor

22‧‧‧ second floor

23, 31, 32‧‧‧ third floor

24‧‧‧ fourth floor

25‧‧‧5th floor

26‧‧‧6th floor

27‧‧‧ seventh floor

28‧‧‧ eighth floor

29‧‧‧ ninth floor

32A‧‧ layer

32B‧‧ layer

32C‧‧ layer

32D‧‧ layer

32E‧‧ layer

40‧‧‧Color filter

40B‧‧‧Blue Filter

40G‧‧‧Green Filter

40R‧‧‧ red filter

50‧‧‧flat film

60‧‧‧Protective film

110A‧‧‧Display area

110B‧‧‧Frame area

121‧‧‧Horizontal selector

131‧‧‧Write scanner

132‧‧‧Power supply scanner

140‧‧‧pixel circuit

150‧‧‧Flexible printed circuit

210‧‧‧ e-book

211‧‧‧Display section

212‧‧‧Non-display section

220‧‧‧Smart Phone

221‧‧‧Display section

222‧‧‧Operation section

223‧‧‧ camera

230‧‧‧TV receiver

231‧‧‧ front panel

232‧‧‧Filter glass

233‧‧‧Image display screen section

240‧‧‧ digital camera

241‧‧‧Flash emission section

242‧‧‧ Display section

243‧‧‧Menu switch

244‧‧‧Shutter switch

250‧‧‧ Laptop

251‧‧‧ body section

252‧‧‧ keyboard

253‧‧‧Display section

260‧‧‧ camera

261‧‧‧ body section

262‧‧‧ lens

263‧‧‧Start/stop switch

264‧‧‧ Display section

270‧‧‧Portable Phone

271‧‧‧Upper casing

272‧‧‧lower casing

273‧‧‧Coupling section/hinge section

274‧‧‧ display

275‧‧‧Sub Display

276‧‧‧flash

277‧‧‧ camera

L1‧‧‧ optical distance

L2‧‧‧ optical distance

L3‧‧‧ optical distance

MC‧‧‧ resonator structure

P1‧‧‧ first interface

P2‧‧‧ second interface

P3‧‧‧ third interface

P4‧‧‧Fourth interface

P5‧‧‧ fifth interface

P6‧‧‧ sixth interface

P7‧‧‧ seventh interface

P8‧‧‧ eighth interface

P9‧‧‧ ninth interface

The drawings are included to provide a further understanding of the invention, and are incorporated in The drawings illustrate the embodiments and together with the specification are used to explain the principles of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a diagram showing the configuration of one of the display units in accordance with a first embodiment of the present invention.

FIG. 2 is a diagram showing an example of one of the pixel circuits illustrated in FIG. 1.

3 is a cross-sectional view showing a configuration of one of the display areas illustrated in FIG. 1.

4 is a cross-sectional view showing a configuration of one of the multilayer films illustrated in FIG.

Figure 5 is a cross-sectional view showing the configuration of one of the multilayer films in one of the display units according to Modification 1.

Figure 6 is a cross-sectional view showing the configuration of one of the multilayer films in one of the display units according to Modification 2.

Figure 7 is a cross-sectional view showing the configuration of one of the multilayer films in a display unit in accordance with a second embodiment of the present invention.

Figure 8 is a cross-sectional view showing the configuration of one of the multilayer films in a display unit in accordance with a third embodiment of the present invention.

9 is a cross-sectional view showing a configuration of one of display areas in a display unit according to a fourth embodiment of the present invention.

Figure 10 is a cross-sectional view showing a configuration of one of display areas in a display unit in accordance with a fifth embodiment of the present invention.

Figure 11 is a cross-sectional view showing a configuration of one of display areas in a display unit in accordance with a sixth embodiment of the present invention.

Figure 12 is a cross-sectional view showing the configuration of one of the display areas in one of the display units according to Modification 3.

Figure 13 is a cross-sectional view showing the configuration of one of the multilayer films of Example 1 according to the present invention.

Figure 14 is a cross-sectional view showing the configuration of one of the protective films of Comparative Example 1 according to the present invention.

Figure 15 is a diagram showing the result of examining the change in chromaticity.

Figure 16 is a cross-sectional view showing the configuration of one of the multilayer films of Example 2 according to the present invention.

Figure 17 is a diagram showing the result of examining the incidence of pixel erosion.

Figure 18 is a plan view showing a schematic configuration of one of the modules of the display unit including any of the above embodiments.

Fig. 19 is a perspective view showing an appearance of one of the application examples 1 of the display unit in any of the above-described embodiments when viewed from the front.

Fig. 20 is a perspective view showing the appearance of one of the application examples 1 when viewed from the back.

Fig. 21 is a perspective view showing the appearance of one of the application examples 2 when viewed from the front.

Fig. 22 is a perspective view showing an appearance of one of the application examples 2 when viewed from the back.

Figure 23 is a perspective view showing the appearance of an application example 3.

Fig. 24 is a perspective view showing the appearance of one of the application examples 4 when viewed from the front.

Fig. 25 is a perspective view showing the appearance of one of the application examples 4 when viewed from the back.

Figure 26 is a perspective view showing the appearance of one of the application examples 5.

Figure 27 is a perspective view showing the appearance of one of the application examples 6.

Figure 28 is a front elevational view showing the appearance of one of the application examples 7 in a closed state.

Figure 29 is a front elevational view showing the appearance of one of the application examples 7 in an open state.

Embodiments of the present invention will be described in detail with reference to the drawings. It should be noted that the description will be provided in the following order.

1. First Embodiment (RGB top emission; having an example in which a high refractive index film and a low refractive index film are alternately laminated into one of four layers of a multilayer film)

2. Modification 1 (having an example of a multilayer film in which a high refractive index film and a low refractive index film are alternately laminated to an even number of layers)

3. Modification 2 (having an example of a multilayer film in which a high refractive index film and a low refractive index film are alternately laminated into an odd number of layers)

4. Second Embodiment (having an example in which a high refractive index film and a low refractive index film are alternately laminated into one of three layers, and one of the third layers is gradually reduced in refractive index)

5. Third Embodiment (having an example in which a high refractive index film and a low refractive index film are alternately laminated into one of three layers of a multilayer film, a third layer having a laminated structure of a plurality of layers and the respective layers The refractive index is gradually reduced)

6. Fourth Embodiment (White Light Top Emission; One Example of Monochrome Display)

7. Fifth Embodiment (White Light Top Emission; One Example of Color Display)

8. Sixth Embodiment (RGB bottom emission; an example in which a multilayer film and a planarization film are separately provided on a TFT)

9. Modification 3 (RGB bottom emission; one of the multilayer films, the fourth layer acts as an example of a planarization film on a TFT)

10. Examples

11. Application examples

(First Embodiment)

1 is a diagram showing one configuration of a display unit in accordance with a first embodiment of the present invention. The display unit is an organic EL color display unit used as one of a monitor or a television receiver, and may have, for example, a display area 110A, which is composed of organic EL devices 10R, 10G, and 10B described later (which a pixel PXLC formed as a display device) is configured a matrix. A horizontal selector (HSEL) 121 (which is a signal section), a write scanner (WSCN) 131 (which is a scanner section), and a power supply scanner (DSCN) 132 are disposed in the display area 110A. around.

In the display region 110A, the signal lines DTL 101 to 10n are arranged in one row direction, and the scanning lines WSL 101 to 10m and the power supply lines DSL 101 to 10m are arranged in one column direction. One of the pixel circuits 140 including any one of the organic EL devices 10R, 10G, and 10B (one sub-pixel) is disposed at an intersection point between each of the scanning lines DTL and each of the scanning lines WSL. Each of the signal lines DTL is connected to the horizontal selector 121, and an image signal is supplied from the horizontal selector 121 to the signal line DTL. Each of the scan lines WSL is connected to the write scanner 131. Each of the power lines DSL is connected to the power supply scanner 132.

FIG. 2 illustrates an example of a pixel circuit 140. The pixel circuit 140 is an active driving circuit including a sampling transistor 3A, a driving transistor 3B, a holding capacitor 3C, and a light emitting device 3D (which is formed by any of the organic EL devices 10R, 10G, and 10B). In the sampling transistor 3A, one of the gates is connected to the scanning line WSL 101 corresponding thereto, one of the source and one of the drains is connected to the corresponding signal line DTL 101, and the other is connected to the driving One of the gates "G" of the transistor 3B. In the driving transistor 3B, one of the drains "d" is connected to the power supply line DSL 101 corresponding thereto, and one of the source "s" is connected to one of the anodes of the light-emitting device 3D. One of the cathodes of the light-emitting device 3D is connected to the ground wiring 3H. It should be noted that the ground wiring 3H is commonly wired to all the pixels PXLC. The holding capacitor 3C is connected between the source "s" of the driving transistor 3B and the gate "g".

The sampling transistor 3A is turned on in response to a control signal supplied from one of the scanning lines WSL 101, samples a signal potential supplied from one of the image signals of the signal line DTL 101, and causes the holding capacitor 3C to maintain the signal potential. The driving transistor 3B receives a current supplied from a power supply line DSL 101 at a power supply potential, and supplies a driving current to the light emitting device 3D in accordance with the signal potential held at the holding capacitor 3C. The supplied driving current causes the light emitting device 3D to emit a strong one of the signal potentials corresponding to the image signal The light of the light.

FIG. 3 illustrates a cross-sectional configuration of one of the display regions 110A illustrated in FIG. 1. In the display region 110A, the organic EL devices 10R, 10B, and 10G which generate light of a single color different from each other in the visible light region are sequentially disposed on a substrate 10 as a plurality of display devices. Specifically, the organic EL device 10R that generates the red light LR, the organic EL device 10B that generates the blue light LB, and the organic EL device 10G that generates the green light LG are sequentially disposed on the substrate 10. It should be noted that the substrate 10 has the pixel circuit 140 described above, and the pixel circuit 140 is covered by a planarization film (not shown). The organic EL devices 10R, 10G, and 10B are disposed on the planarization film.

The organic EL devices 10R, 10G, and 10B each have an organic layer 13 including one of the light-emitting layers disposed between the lower electrode 11 and an upper electrode 12. The lower electrode 11, the organic layer 13, and the upper electrode 12 are laminated in this order from the substrate 10 side.

Here, in the present embodiment, the lower electrode 11 corresponds to a specific (but not limited) example of one of the "first electrodes" in the present invention. The upper electrode 12 corresponds to a specific (but not limited) example of one of the "second electrodes" in the present invention.

The substrate 10 can be configured, for example, from a transparent glass substrate or a semiconductor substrate such as a germanium substrate. In addition, the substrate 10 may be a flexible substrate made of a plastic material.

For example, the lower electrode (anode) 11 may have a thickness of about 100 nm to about 300 nm, and is made of, for example, a reflective material such as aluminum (Al), aluminum alloy, platinum (Pt), gold (Au). , chromium (Cr) and tungsten (W)) configuration. The lower electrode 11 can extract light (top emission) generated in the light-emitting layer from the side of the upper electrode 12. Further, the lower electrode 11 may be a transparent electrode made of a material such as ITO (Indium Tin Oxide). In this case, it may be desirable to provide a reflective layer (not shown) between the lower electrode 11 and the substrate 10 to form a first interface P1 of one of the resonator structures which will be described later. The reflective layer can be made of a reflective material such as Pt, Au, Cr, and W.

The lower electrode 11 for each of the organic EL devices 10R, 10G, and 10B is formed separately. In addition, the insulating film (not shown) may be separated by a pixel to make the lower electrode 11 as needed. Electrically separated from each other. For example, the pixel separation insulating film may have a thickness of about 2 μm and is configured by an organic photosensitive insulating material such as polyimide or an organic insulating film such as a tantalum oxide film and a tantalum nitride film.

For example, the upper electrode (cathode) 12 may have a thickness ranging from about 3 nm to about 15 nm, and is composed of a metal film (which is composed of an element such as magnesium (Mg) and silver (Ag) or an alloy thereof Anyone made) configuration.

It should be noted that the upper electrode 12 is separately provided to each of the organic EL devices 10R, 10G, and 10B in FIG. 3, but may be supplied to the organic EL devices 10R, 10G, and 10B as a common electrode.

The organic layer 13 can be, for example, a layer in which a hole injection layer and a hole transport layer 13A, a light-emitting layer 13B, an electron transport layer, and an electron injection layer 13C are sequentially stacked from the lower electrode 11 side.

The hole injection layer and the hole transport layer 13A are provided to increase the hole injection efficiency of the light-emitting layer 13B. The hole injection layer can be configured, for example, from a material such as hexaazatriphenylene (HAT). The hole transport layer can be, for example, α-NPD[N,N'-bis(1-naphthyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-di Amine] configuration.

When recombination between a hole and an electron is caused by application of an electric field, the light-emitting layer 13B generates light. Electrons are injected from the lower electrode 11 through the hole injection layer and the hole transport layer 13A, and electrons are injected from the upper electrode 12 through the electron transport layer and the electron injection layer 13C. The light-emitting layer 13B can be configured, for example, of a light-emitting material made of a host material and a dopant material. Specifically, the light-emitting layer 13B of the organic EL device 10B of blue light can be, for example, a layer in which a film serving as a host material is doped with a diamine-based derivative which acts as a dopant material. The film may have a thickness of about 30 nm and is made of ADN (9,10-bis(2-naphthyl)anthracene). The amine-based derivative can have a relative film thickness ratio of 5%. The light-emitting layer 13B of the green organic EL device 10G can be configured by, for example, Alq ₃ (tris(8-hydroxyquinoline)aluminum). The light-emitting layer 13B of the red-light organic EL device 10R may, for example, be a layer in which a red fluorene which serves as a host material is doped with a pyrrolemethylene boron complex which serves as a dopant material.

The electron transport layer and the electron injection layer 13C are provided to increase the electron injection efficiency of the light-emitting layer 13B. The electron transport layer can be configured, for example, by BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline). The electron injection layer can be configured, for example, from lithium fluoride (LiF).

In terms of the thickness of each layer of the organic layer 13, preferably, for example, the hole injection layer may be in the range of about 1 nm to about 20 nm, and the hole transport layer may be in the range of about 15 nm to about 100 nm. Within the range of meters, the luminescent layer can range from about 5 nanometers to about 50 nanometers, and the electron transport layer and the electron injecting layer can range from about 15 nanometers to about 200 nanometers. Further, the thickness of each of the organic layer 13 and its layers is set to a value such that one of the optical film thicknesses realizes the operation of the resonator structure described later.

It should be noted that the organic layer 13 is separately supplied to each of the organic EL devices 10R, 10G, and 10B in FIG. 3, and can be supplied to the organic EL devices 10R, 10G, and 10B as a common layer.

Further, each of the organic EL devices 10R, 10G, and 10B has a resonator structure MC. The resonator structure MC uses one end surface on the side of the light-emitting layer 13B of the lower electrode 11 as a first interface P1, one end surface on the side of the light-emitting layer 13B of the upper electrode 12 as a second interface P2, and an organic layer 13 The light generated in the light-emitting layer 13B is resonated as a resonance section. Therefore, having the resonator structure MC can reduce one-half the half-value width of one of the extracted lights and increase a peak intensity because the light generated in the light-emitting layer 13B causes multiple interactions to thereby serve as a narrow-band filter. . In other words, the intensity of the light radiation in the front direction can be increased to thereby improve the color purity of the emitted light. Furthermore, external light entering from the side of the upper electrode 12 is also allowed to be reduced by multiple interactions. This can be significantly reduced in the organic EL devices 10R, 10G, and 10B by using a color filter (not shown) or a combination of a phase difference plate and a polarizing plate (both not shown). The reflectivity of the external light.

Preferably, for example, an optical distance L1 between the first interface P1 and the second interface P2 Mathematical expression 1 can be satisfied.

[mathematical expression 1] (2L1) / λ + Φ / (2π) = m

(In the above mathematical expression, "Φ" represents the sum of the phase shift Φ1 of one of the reflected light generated at the first interface P1 and the phase shift Φ2 of the reflected light generated at the second interface P2 (ie, Φ = Φ1 + Φ2)(rad), "λ" represents one of the peak wavelengths of one of the spectra of the light to be extracted, and "m" represents an integer).

In each of the organic EL devices 10R, 10G, and 10B having the resonator structure MC as described above, the viewing angle dependence of luminance and chromaticity (that is, one case viewed from the front direction and viewed from an oblique direction) One of the brightness and chromaticity changes between one case tends to increase as the order "m" becomes larger. When it is assumed that an organic EL display is used for a monitor, a television receiver or the like, the luminance attenuation and the chromaticity change depending on one of the viewing angles may preferably be small.

One condition of m = 0 is ideal when only viewing angle properties are considered. However, under this condition, the thickness of the organic layer 13 is small and the luminescent properties are thus affected, and a short circuit may occur between the lower electrode 11 and the upper electrode 12. Therefore, it is possible to avoid the enhancement of the viewing angle dependence of luminance and chromaticity by using, for example, the condition of m=1 to suppress the attenuation of the luminescent property and the occurrence of the short circuit and achieve compatibility between productivity improvement and excellent viewing angle properties. .

Further, in each of the organic EL devices 10R, 10G, and 10B, a multilayer film 20 in which a high refractive index film and a low refractive index film are alternately laminated is disposed on one outer side of the upper electrode 12. One or more additional interfaces are disposed between the high refractive index film and the low refractive index film of the multilayer film 20. Therefore, in this display unit, it is allowed to increase the design flexibility of the resonator structure MC, and it is easier to reduce the viewing angle dependency.

Specifically, as shown in FIG. 4, the multilayer film 20 sequentially includes a first layer 21 of a high refractive index film, a second layer 22 of a low refractive index film, and a high refraction from the side of the upper electrode 12. One of the third layer 23 of the film and a fourth layer 24 of one of the low refractive index films. Resonator structure MC contains A third interface P3 between the first layer 21 and the second layer 22 serves as an additional interface, and includes a fourth interface P4 between the third layer 22 and the third layer 23 as an additional interface.

The third interface P3 and the fourth interface P4 as additional interfaces are arranged to adjust one of the monochromatic rays to balance when combining the monochromatic rays R, G, and B emitted by the organic EL devices 10R, 10G, and 10B.

In other words, when light is emitted by combining R, G, and B, it is difficult to suppress a color shift if the relative change in the viewing angles of the three color values X, Y, and Z of the combined light is irrelevant. This is especially disadvantageous for white light that is easily perceived. To this end, in the present embodiment, the multilayer film 20 is disposed on the upper electrode 12 to finely adjust one of R, G, and B to balance. In other words, in the multilayer film 20, the third interface P3 and the fourth interface P4 except the first interface P1 and the second interface P2 are formed as additional interfaces to increase design flexibility, so that R, G, and B are Balance adjustment is easy. It should be noted that the balance of R, G, and B can be adjusted by performing thickness adjustment and/or material selection of the organic layer 13, thickness adjustment of layers of the multilayer film 20, and/or the like.

The multilayer film 20 as described above also functions as a passivation film to protect the upper electrode 12 and the organic layer 13 from being easily affected by erosion or deterioration of water and the like. The multilayer film 20 is configured by a combination of an inorganic material, an organic material, or the like. Examples of the inorganic material may include a combination of cerium oxide (SiOx), cerium nitride (SiNx), and the like. Examples of the organic material may include a resin film based on polyimide, epoxy, and acrylic.

The multilayer film 20 can preferably be configured by a film having ruthenium (Si) and nitrogen (N) as main components. The film having ruthenium (Si) and nitrogen (N) as main components can be formed as a film which is closely packed and has a low water content, even if formed by low temperature CVD (Chemical Vapor Deposition). Therefore, in particular, in the case of one of the top emission, heat damage to the organic layer 13 due to the formation of the multilayer film 20 by high temperature CVD after the formation of the organic layer 13 can be avoided. The passivation performance of the multilayer film 20 can also be improved and the high temperature storage characteristics and reliability can be enhanced.

Examples of the film having cerium (Si) and nitrogen (N) as main components may include SiNx, SiON, and SiCN. SiNx is preferred. Regarding the SiNx film, it is possible to adjust the CVD strip during film formation. It is easy to change a refractive index. Therefore, forming the same SiNx film with only the refractive index variation as all of the first layer 21 to the fourth layer 24 can simplify a configuration and reduce the equipment cost of one process.

Further, in order to cohere the relative change in the viewing angles of the three color values X, Y, and Z of the combined light (white light) (as described above), a large refractive index is not required. Therefore, the refractive index difference between a high refractive index SiN and a low refractive index SiN can be adjusted, and the material can be flexibly selected. It is not necessary to use a loose and high water content material such as SiO to increase the refractive index difference at one interface, and thus pixel erosion can be suppressed.

A specific configuration of one of the first layer 21 to the fourth layer 24 of the multilayer film 20 will be described hereinafter.

The first layer 21 is one of the layers of the multilayer film 20 that is closest to the upper electrode 12 and is disposed in direct contact with the upper electrode 12. The first layer 21 is provided to prevent unconverted gas from an upper film (specifically, the second layer 22 or the fourth layer 24) from entering the upper electrode 12 and one of the organic layers 13. Therefore, it is desirable for the first layer 21 to have high barrier performance. For this reason, when one of the NH stretching vibrations belonging to about 3350 cm ^-1 in a Fourier transform infrared spectrometer spectrum is assumed to be "A" and one of the Si-H stretching vibrations belonging to about 2160 cm ^-1 is assumed to be At "B", the B/A ratio of one of the first layers 21 may preferably be greater than the B/A ratio of the fourth layer 24.

The first layer 21 may be configured by, for example, a film (such as a SiNx film) which is one of main components of bismuth (Si) and nitrogen (N). In addition, the first layer 21 is provided as a film which is closely packed (highly dense) and has a high bismuth composition ratio for improving the barrier performance for the above reasons, and therefore, the refractive index of the first layer 21 is in the multilayer film 20. The layer is relatively high.

Further, the first layer 21 has an optical adjustment function of forming the third interface P3, and therefore, the first layer 21 may preferably be not too thick. This is because when the first layer 21 is too thick, the third interface P3 is no longer present. Preferably, the first layer 21 can have a thickness of, for example, about 10 nanometers or more and about 500 nanometers or less.

The second layer 22 is configured to form a third interface between the first layer 21 and the second layer 22 A low refractive index film of P3. In other words, when one of the refractive indices of the first layer 21 is assumed to be "n1" and the refractive index of one of the second layers 22 is assumed to be "n2", one relationship of n1 > n2 is maintained.

The second layer 22 may be configured by, for example, a film (such as a SiNx film) which is one of main components of bismuth (Si) and nitrogen (N). The second layer 22 is set to be one of the films looser (lower density) than the first layer 21 by adjusting the film formation conditions. Therefore, the second layer 22 has a refractive index lower than that of the first layer 21. It should be noted that the second layer 22 is a loose film and thus contains a large amount of unconverted gas. However, the unconverted gas from the second layer 22 is prevented from entering the upper electrode 12 or the organic layer 13, because the first layer 21 having a barrier function is disposed between the second layer 22 and the upper electrode 12.

In addition, the second layer 22 has an optical adjustment function for forming the third interface P3 and the fourth interface P4. Therefore, the second layer 22 which is not too thick may be preferable. This is because when the second layer 22 is too thick, the third interface P3 and the fourth interface P4 are no longer present. Preferably, the second layer 22 can have a thickness of, for example, about 10 nanometers or more and about 500 nanometers or less.

The third layer 23 is a high refractive index film disposed to form a fourth interface P4 between the second layer 22 and the third layer 23. In other words, when one of the refractive indices of the second layer 22 is assumed to be "n2" and the refractive index of one of the third layers 23 is assumed to be "n3", one relationship of n2 < n3 is maintained.

The third layer 23 may be configured by, for example, a film (such as a SiNx film) which is one of main components of bismuth (Si) and nitrogen (N). In addition, the third layer 23 is disposed as a film which is closely packed and has a sorghum composition ratio as the first layer 21 by adjusting the film formation conditions. Therefore, the third layer 23 has a high refractive index and also has a function of complementing the barrier properties of the first layer 21.

Further, the third layer 23 has an optical adjustment function of forming the fourth interface P4, and therefore, the third layer 23 which is not too thick may be preferable. This is because when the third layer 23 is too thick, the fourth interface P4 no longer exists. Preferably, the third layer 23 can have a thickness of, for example, about 10 nanometers or more and about 500 nanometers or less.

Further, the refractive index n3 of the third layer 23 and the refractive index n1 of the first layer 21 may preferably satisfy n1>n3. This can be achieved by allowing the reflection at the fourth interface P4 to be smaller than the inverse at the third interface P3. Shoot to improve extraction efficiency.

The fourth layer 24 is one of the layers of the multilayer film 20 that is furthest from the upper electrode 12. The fourth layer 24 is disposed to prevent water and the like by covering the foreign matter or protrusion when a foreign matter or a protrusion is present on the underlying film (the organic layer 13, the upper electrode 12, and/or the like) Enter a membrane from a gap.

The fourth layer 24 may be configured by, for example, a film (such as a SiNx film) which is one of main components of bismuth (Si) and nitrogen (N). The fourth layer 24 is disposed to be looser than the third layer 23 by adjusting the film formation conditions, and thus has a refractive index lower than that of the third layer 23. It should be noted that the fourth layer 24 is a loose film and thus contains a large amount of unconverted gas. However, the unconverted gas from the fourth layer 24 is prevented from entering the upper electrode 12 or the organic layer 13, because the first layer 21 and the third layer 23 each having a barrier function are disposed on the fourth layer 24 and the upper electrode 12 between. The refractive index n4 of one of the fourth layers 24 is substantially the same as the refractive index n2 of the second layer 22.

The fourth layer 24 may preferably have a thickness of about 1 micron or greater, and more preferably one of about 1 micron or greater and about 10 microns or less. This is because when the thickness is less than 1 micrometer, a foreign matter or a protrusion on the underlying film cannot be reliably covered. In addition, since the fourth layer 24 is a loose film (as described above), it is allowed to increase the film formation rate, and the thickness is easily increased to 1 μm or more.

The fourth layer 24 may preferably have an extinction coefficient of, for example, 0.01 or less. This is because, in the case where the thickness of the fourth layer 24 is 1 μm or more (which is thick), when the absorption of light of the fourth layer 24 is large, light emitted from the organic layer 13 can be absorbed. And can reduce the extraction efficiency.

It should be noted that the first layer 21 to the fourth layer 24 of the multilayer film 20 are supplied to each of the organic EL devices 10R, 10G, and 10B in FIG. 3, but may be supplied to the organic EL devices 10R, 10G as a common layer. And 10B.

Further, for example, an opposite substrate (not shown) made of glass or the like may be adhered to the entire surface of the multilayer film 20, wherein the UV curable resin or the thermosetting tree is used. A bonding layer (not shown) of the grease is interposed between the opposite substrate and the multilayer film 20. The counter substrate has a light shielding film serving as a color filter or a black matrix as needed. A lens sheet (not shown) may be attached between the multilayer film 20 and the opposite substrate. Examples of the material of one of the bonding layers may include an organic material based on an epoxy resin and an organic material based on acrylic acid.

For example, this display unit can be manufactured as follows.

First, the pixel circuit 140 is formed on the substrate 10 made of the material described above, and the surface of the substrate 10 is planarized by a planarization film (not shown). Next, on the surface of the substrate 10 covered by the planarization film, a lower electrode metal film (not shown) made of, for example, an Al alloy is formed by, for example, sputtering to have, for example, A thickness of about 100 nm. This lower electrode material film is formed into a predetermined shape by using, for example, photolithography and etching to form the lower electrode 11. Subsequently, an electrode separation insulating film (not shown) is formed between the lower electrodes 11 as needed.

Subsequently, on the lower electrode 11, a hole injection layer having respective thicknesses and made of the respective materials described above, and a hole transport layer 13A, a light-emitting layer 13B, and an electron transport layer are sequentially deposited by, for example, vacuum deposition. And the electron injection layer 13C forms the organic layer 13. The organic layer 13 for each of red, green, and blue colors can be separately formed by vapor deposition using a mask. In addition, the organic layer 13 has a function as one of resonance regions that resonate light generated in the light-emitting layer 13B in the resonator structure MC. Therefore, it is possible to improve the extraction efficiency and the viewing angle property by adjusting the thicknesses of the organic layers 13 of red, green, and blue, and by adjusting the thickness of the resonance section in the resonator structure MC.

After the organic layer 13 is formed, the upper electrode 12 having the above thickness and made of the above material is formed on the organic layer 13 by, for example, vacuum deposition. Therefore, the first interface P1 of the resonator structure MC is formed at the end face on the side of the light-emitting layer 13B of the lower electrode 11, and the second interface P2 of the resonator structure MC is formed at the end face on the side of the light-emitting layer 13B of the upper electrode 12.

After the upper electrode 12 is formed, each of the above-described thicknesses is formed on the upper electrode 12 and The first layer 21 to the fourth layer 24 of the above materials are formed to form the multilayer film 20. Examples of a method of forming the multilayer film 20 may include plasma CVD suitable for inorganic materials and coating suitable for organic materials. Plasma CVD provides excellent coatability (coverage) and achieves high speed film formation, and thus advantageously improves productivity. Coating provides excellent surface smoothness.

When the multilayer film 20 is configured by, for example, a SiNx film, the multilayer film 20 can be preferably formed by low temperature CVD using a gas containing a carrier gas such as decane gas, ammonia gas, and nitrogen as a raw material. At the same time, the refractive index can be preferably changed between the high refractive index films (the first layer 21 and the third layer 23) and the low refractive index film (the second layer 22 and the fourth layer 24) by adjusting the CVD conditions. In this case, examples of ranges of CVD conditions may include a decane gas flow rate of from about 0.1 (SLM) to about 5.0 (SLM), an ammonia gas flow rate of from about 0.1 (SLM) to about 5.0 (SLM), about 0.1 (SLM). Nitrogen flow rate to about 10.0 (SLM), RF power from about 0.1 (kW) to about 10.0 (kW), and pressure from about 10 (Pa) to about 500 (Pa).

The multilayer film 20 can be preferably formed at a substrate temperature of about 150 degrees Celsius or less. This is because thermal damage to the organic layer 13 can be avoided.

In this manner, the first layer 21 of the high refractive index film, the second layer 22 of the low refractive index film, the third layer 23 of the high refractive index film, and the fourth layer 24 of the low refractive index film are sequentially laminated on the upper electrode 12 on. The third interface P3 is formed as an additional interface of the resonator structure MC between the first layer 21 of the high refractive index film and the second layer 22 of the low refractive index film. The fourth interface P4 is formed as an additional interface of the resonator structure MC between the second layer 22 of the low refractive index film and the third layer 23 of the high refractive index film.

Subsequently, a bonding layer (not shown) is formed on the multilayer film 20, and the opposite substrate (not shown) is laminated and sealed. Thereby, the display unit illustrated in FIGS. 1 to 3 is completed.

In this display unit, the sampling transistor 3A is turned on in response to a control signal supplied from one of the scanning lines WSL, and samples a signal potential supplied from one of the image signals of the signal line DTL and holds the signal potential at the holding capacitor 3C. Further, a current is supplied from the power supply line DSL to the driving transistor 3B, and the signal is held according to the holding capacitor 3C. A driving current is supplied to the light-emitting device 3D (organic EL devices 10R, 10G, and 10B) at the potential. The light-emitting device 3D (organic EL devices 10R, 10G, and 10B) is caused to emit light having an intensity corresponding to one of the signal potentials of the image signal by the supplied driving current. This light is extracted after passing through the upper electrode 12, the color filter, and the opposite substrate (not shown).

Here, the end face on the side of the light-emitting layer 13B of the lower electrode 11 is used for the first interface P1, and the end face on the side of the light-emitting layer 13B of the upper electrode 12 is used for the second interface P2, and the organic layer 13 is used as the resonance section. The resonator structure MC. Therefore, the light generated in the light-emitting layer 13B of each of the organic EL devices 10R, 10G, and 10B causes multiple interactions between the first interface P1 and the second interface P2, thereby improving brightness, color purity, and analog.

Further, a multilayer film 20 in which a high refractive index film and a low refractive index film are alternately laminated is present on the outer side of the upper electrode 12, and one or a plurality of additional interfaces of the resonator structure MC are disposed on the high refractive index film of the multilayer film 20. Between the film and the low refractive index film. Specifically, the multilayer film 20 sequentially includes a first layer 21 of a high refractive index film, a second layer 22 of a low refractive index film, a third layer 23 of a high refractive index film, and a low refractive index film from the side of the upper electrode 12. The fourth layer 24. The resonator structure MC has a third interface P3 as an additional interface between the first layer 21 and the second layer 22, and a fourth interface P4 between the second layer 22 and the third layer 23 as an additional interface.

Therefore, having the third interface P3 and the fourth interface P4 on the outer side of the upper electrode 12 as an additional interface increases design flexibility and is easy to combine two or more monochromatic rays to be emitted (for example, R, G And B) adjust the balance of one of these monochromatic lights. Therefore, it is easy to cohere with relative changes in the viewing angles due to the trichromatic values X, Y, and Z of the combined light. Therefore, in particular, one of the chromatic changes of the white light that is easily perceived is suppressed, and the viewing angle dependence of the luminescent property is lowered.

In this manner, in the present embodiment, the multilayer film 20 in which the high refractive index film and the low refractive index film are alternately laminated is disposed on the outer side of the upper electrode 12, and one or a plurality of additional interfaces of the resonator structure MC are disposed on Between the high refractive index film of the multilayer film 20 and the low refractive index film. Specifically, the third interface P3 is disposed between the first layer 21 and the second layer 22, and the fourth interface P4 is disposed between the second layer 22 and the third layer 23. Therefore, the design flexibility of the improved resonator structure MC is allowed to be allowed, and the viewing angle dependency is allowed to be more easily reduced.

In particular, the multilayer film 20 is configured by a film (such as a SiNx film) containing bismuth (Si) and nitrogen (N) as main components, and thus even allows a close packing and low water content to be formed by low temperature CVD. membrane. Therefore, the passivation efficiency of the multilayer film 20 is allowed to be increased, and the reliability is allowed to be enhanced.

(Modification 1)

It should be noted that in the above-described first embodiment, it has been described in which the high refractive index films (the first layer 21 and the third layer 23) and the low refractive index film (the second layer 22 and the fourth layer 24) are alternately laminated into a plurality of layers. The case of the four layers of the film 20. However, the number of laminated layers of the multilayer film 20 is not limited to four. The high refractive index film and the low refractive index film may be alternately laminated to any of an even number of layers of six, eight or eight or more layers.

For example, as shown in FIG. 5, a high refractive index film (first layer 21, third layer 23, fifth layer 25, and seventh layer 27) and a low refractive index film (second layer 22, fourth layer 24) may be used. The sixth layer 26 and the eighth layer 28) are alternately stacked into eight layers. In this case, the third interface P3 is formed between the first layer 21 and the second layer 22, the fourth interface P4 is formed between the second layer 22 and the third layer 23, and a fifth interface P5 is formed in the Between the third layer 23 and the fourth layer 24. In addition, a sixth interface P6 is formed between the fourth layer 24 and the fifth layer 25, a seventh interface P7 is formed between the fifth layer 25 and the sixth layer 26, and an eighth interface P8 is formed in the sixth layer. Between layer 26 and seventh layer 27.

In Modification 1, the layer of the multilayer film 20 which is farthest from the upper electrode 12 (the eighth layer 28) is a low refractive index film, that is, a loose film. Therefore, a film formation rate of the eighth layer 28 can be increased to increase the thickness of the eighth layer 28 and cover a foreign matter and/or a layer on the underlying film (the organic layer 13, the upper electrode 12, and/or the like). The protrusions inhibit water and the like from entering a gap.

(Modification 2)

In Modification 1, the number of laminated layers in which the multilayer film 20 is described is described as an even number. Happening. However, the number of laminated layers of the multilayer film 20 is not limited to an even number, and the high refractive index film and the low refractive index film may be alternately laminated to form an odd number of layers.

For example, as shown in FIG. 6, the high refractive index films (the first layer 21, the third layer 23, the fifth layer 25, the seventh layer 27, and the ninth layer 29) and the low refractive index film (the second layer 22, The four layers 24, the sixth layer 26 and the eighth layer 28) may be alternately laminated into nine layers. In this case, the third interface P3 is formed between the first layer 21 and the second layer 22, the fourth interface P4 is formed between the second layer 22 and the third layer 23, and the fifth interface P5 is formed in the third Between layer 23 and fourth layer 24. Further, the sixth interface P6 is formed between the fourth layer 24 and the fifth layer 25, the seventh interface P7 is formed between the fifth layer 25 and the sixth layer 26, and the eighth interface P8 is formed on the sixth layer 26 and the A seven layer 27 and a ninth interface P9 are formed between the seventh layer 27 and the eighth layer 28.

In Modification 2, the layer of the multilayer film 20 which is farthest from the upper electrode 12 (ninth layer 29) is a high refractive index film, that is, a film which is closely packed and has a high bismuth composition ratio. In this case, it is difficult to increase the film formation rate of the ninth layer 29 to increase the thickness of the ninth layer 29. However, in the case where the total thickness of the multilayer film 20 is sufficiently large, even if the thickness of the ninth layer 29 is small, the underlayer film (the organic layer 13, may be covered by the first layer 21 to the eighth layer 28, A foreign object and/or a protrusion on the upper electrode 12 and/or the like inhibits entry of water and the like from a gap.

(Second embodiment)

Figure 7 is a cross-sectional view showing one of the multilayer films 20 in a display unit in accordance with a second embodiment of the present invention. The display unit of the second embodiment differs from the display unit of the first embodiment in the configuration of the multilayer film 20, but other configurations, functions, and effects are similar to the configuration, functions, and effects of the first embodiment. Therefore, elements that are the same as those of the first embodiment will have the same reference element symbols as the reference element symbols of the first embodiment.

A substrate 10, a lower electrode 11, an upper electrode 12, and an organic layer 13 are configured in a manner similar to that of the first embodiment.

The multilayer film 20 sequentially includes a first layer 21 of a high refractive index film from the side of the upper electrode 12, A second layer 22 and a third layer 31 of a low refractive index film. In the third layer 31, a refractive index continuously decreases from the side of the second layer 22 in a direction in which the emitted light is emitted. A resonator structure MC has a third interface P3 between the first layer 21 and the second layer 22 as an additional interface.

An optical distance L1 between a first interface P1 and a second interface P2 and an optical distance L2 between the first interface P1 and the third interface P3 are similar to the optical distance L1 and the optical distance L2 of the first embodiment.

The multilayer film 20 is configured by a combination of an inorganic material, an organic material, or the like, as in the first embodiment. More preferably, the multilayer film 20 may be configured of a film (such as SiNx, SiON, and SiCN) which is one of main components of bismuth (Si) and nitrogen (N), as in the first embodiment.

One of the configuration of each of the first layer 21, the second layer 22, and the third layer 31 of the multilayer film 20 will be described hereinafter.

The first layer 21 and the second layer 22 are configured in a manner similar to the manner of the first embodiment.

The third layer 31 is one of the layers of the multilayer film 20 that is farthest from the upper electrode 12. The third layer 31 is disposed to prevent the foreign matter and/or the protrusion from being covered by the presence of a foreign object and/or a protrusion on the underlying film (the organic layer 13, the upper electrode 12, and/or the like) Water and the like enter one of the membranes from a gap.

The third layer 31 may be configured by, for example, a film (such as a SiNx film) which is one of main components of bismuth (Si) and nitrogen (N). The third layer 31 is set to be loosened from the side of the second layer 22 in the direction in which the emitted light is emitted by adjusting the film forming conditions. Therefore, the refractive index continuously decreases from the side of the second layer 22 along the direction in which the emitted light is emitted.

Preferably, when one of the refractive indices on the second layer 22 side of the third layer 31 is assumed to be "n31" and the refractive index of one of the second layers 22 is assumed to be "n2", one of n2 < n31 can be maintained. relationship. When the refractive index n31 on the second layer 22 side of the third layer 31 is too low, it is difficult to allow the third interface P3 between the first layer 21 and the second layer 22 having a reflection function to be one of the resonator structures MC. Resonant surface.

Further, preferably, the refractive index of the third layer 31 may continuously decrease from the side of the second layer 22 along the emission light emission direction, in other words, the refractive index of the third layer 31 does not increase at a certain midpoint. This can reduce light absorption in the third layer 31 and improve extraction efficiency.

The third layer 31 can have a thickness of preferably about 1 micron or greater and more preferably about 1 micron or greater and 10 microns or less. This is because when the thickness is less than 1 μm, foreign matter and/or protrusions on the underlayer film cannot be reliably covered. In addition, since the third layer 31 contains a loose portion which is one of the portions in one thickness direction, the film formation rate can be increased and the thickness can be easily increased to 1 μm or more.

The extinction coefficient of one of the third layers 31 may preferably be, for example, about 0.01 or less. This is because, in the case where the thickness of the third layer 31 is one micron or more (which is thicker), when the light absorption of the third layer 31 is large, the light emitted from the organic layer 13 can be absorbed, And can reduce the extraction efficiency.

The display unit of the second embodiment can be manufactured in a manner similar to that of the first embodiment, except that the method of forming one of the third layers 31 of the multilayer film 20 is different. For example, the method of forming the third layer 31 of the multilayer film 20 can be as follows. During the formation of the CVD film of the third layer 31, the emission direction of the emitted light is continuously reduced from the side of the second layer 22 by continuously changing conditions such as a flow rate of the decane gas, a flow rate of the ammonia gas, a flow rate of the nitrogen gas, an RF power, and a pressure. The refractive index of the three layers 31.

In this display unit, drive control is performed on each of the light-emitting devices 3D (organic EL devices 10R, 10G, and 10B) in a manner similar to that described in the first embodiment, and display is performed.

Here, a resonator structure MC is provided, wherein one end surface of the lower electrode 11 on the side of the light-emitting layer 13B is disposed as the first interface P1, and one end surface of the upper electrode 12 on the side of the light-emitting layer 13B is disposed as the second interface P2. And the organic layer 13 is provided as a resonating section. Therefore, the light generated in the light-emitting layer 13B of each of the organic EL devices 10R, 10G, and 10B causes multiple interactions between the first interface P1 and the second interface P2, thereby improving brightness and color in the front direction. Purity and analogues.

In addition, the multilayer film 20 sequentially includes the first layer 21 of the high refractive index film, the second layer 22 and the third layer 31 of the low refractive index film from the side of the upper electrode 12, and in the third layer 31, the refractive index is from the first layer The second layer 22 side is continuously reduced in the direction of emission of the emitted light. The resonator structure MC has a third interface P3 between the first layer 21 and the second layer 22 as an additional interface.

The third interface P3 on the outer side of the upper electrode 12 as an additional interface in this way increases the flexibility of the design and is also easy to combine when two or more monochromatic rays (eg, R, G, and B) to be emitted are combined. Adjust one of these monochromatic rays to balance. Therefore, it is easy to cohere with relative changes in the viewing angles due to the trichromatic values X, Y, and Z of the combined light. Therefore, in particular, one of the chromatic changes of the white light that is easily perceived is suppressed, and the viewing angle dependence of the luminescent property is lowered.

In this manner, in the second embodiment, the first layer 21 of the high refractive index film, the second layer 22 of the low refractive index film, and the third layer 31 are sequentially disposed as layers of the multilayer film 20 from the side of the upper electrode 12 . In the third layer 31, the refractive index continuously decreases from the side of the second layer 22 along the emission light emission direction. In addition, the third interface P3 is disposed between the first layer 21 and the second layer 22. Therefore, the design flexibility of the improved resonator structure MC is allowed to be allowed, and the viewing angle dependency is allowed to be more easily reduced.

(Third embodiment)

Figure 8 illustrates a configuration of one of the multilayer films 20 in a display unit in accordance with a third embodiment of the present invention. The difference between the display unit of the third embodiment and the display unit of the first embodiment is the configuration of the multilayer film 20, but the external configuration, function and effect are similar to the configuration, function and effect of the first embodiment. . Therefore, elements that are the same as those of the first embodiment will have the same reference element symbols as the reference element symbols of the first embodiment.

A substrate 10, a lower electrode 11, an upper electrode 12, and an organic layer 13 are configured in a manner similar to that of the first embodiment.

The multilayer film 20 sequentially includes a first layer 21 of a high refractive index film, a second layer 22 of a low refractive index film, and a third layer 32 from the side of the upper electrode 12. The third layer 32 has a plurality of layers A laminated structure of 32A, 32B, 32C, 32D and 32E, and the refractive indices of the plurality of layers 32A to 32E are gradually decreased from the side of the second layer 22 in a direction in which the emitted light is emitted. A resonator structure MC has a third interface P3 between the first layer 21 and the second layer 22 as an additional interface.

An optical distance L1 between a first interface P1 and a second interface P2 and an optical distance L2 between the first interface P1 and the third interface P3 are similar to the optical distance L1 and the second optical distance of the first embodiment. L2.

The multilayer film 20 is configured by a combination of an inorganic material, an organic material, or the like, as in the first embodiment. More preferably, the multilayer film 20 may be configured of a film (such as SiNx, SiON, and SiCN) which is one of main components of bismuth (Si) and nitrogen (N), as in the first embodiment.

One of the first layer 21, the second layer 22, and the third layer 32 of the multilayer film 20 will be configured hereinafter.

The first layer 21 and the second layer 22 are configured in a manner similar to the manner of the first embodiment.

The third layer 32 is one of the layers of the multilayer film 20 that is furthest from the upper electrode 12. The third layer 32 is disposed to prevent the foreign matter and/or the protrusion from being covered by the presence of a foreign object and/or a protrusion on the underlying film (the organic layer 13, the upper electrode 12, and/or the like) Water and the like enter one of the membranes from a gap.

The plurality of layers 32A to 32E of the third layer 32 may each be configured, for example, by a film (such as a SiNx film) having yttrium (Si) and nitrogen (N) as main components. The plurality of layers 32A to 32E are each set as a film in which the respective densities are gradually decreased from the side of the second layer 22 in the emission light emission direction by adjusting the film formation conditions, and thus the light is emitted from the side of the second layer 22 The direction gradually reduces the respective refractive indices.

Preferably, when one of the plurality of layers 32A to 32E is closest to the second layer 22, the refractive index of one of the layers 32A is assumed to be "n31" and the refractive index of one of the second layers 22 is assumed to be "n2". Maintain a relationship of n2 < n31. When the refractive index n31 of the layer 32A is too low, it is difficult to allow the third interface P3 between the first layer 21 and the second layer 22 having a reflection function as a resonator junction. Construct one of the resonant faces of MC.

Further, preferably, the plurality of layers 32A to 32E may have respective refractive indexes which are gradually reduced from the side of the second layer 22 in the direction in which the emitted light is emitted, in other words, the refractive index does not increase at a certain midpoint. This can reduce light absorption in the third layer 32 and improve extraction efficiency.

The third layer 32 can have a thickness (a total thickness of the plurality of layers 32A to 32E) of preferably about 1 micrometer or greater and more preferably about 1 micrometer or greater and 10 micrometers or less. This is because when the thickness is less than 1 μm, foreign matter and/or protrusions on the underlayer film (the organic layer 13, the upper electrode 12, and/or the like) cannot be reliably covered. In addition, since the third layer 32 contains a loose portion which is one of the portions in one thickness direction, the film formation rate can be increased and the thickness can be easily increased to 1 μm or more.

The extinction coefficient of one of the third layers 32 may preferably be, for example, about 0.01 or less. This is because, in the case where the thickness of the third layer 32 is 1 micrometer or more (which is thicker), when the light absorption of the third layer 32 is large, light emitted from the organic layer 13 can be absorbed, And can reduce the extraction efficiency.

The display unit of the third embodiment can be manufactured in a manner similar to that of the first embodiment except that one of the methods of forming the third layer 32 of the multilayer film 20 is different. For example, the method of forming the third layer 32 of the multilayer film 20 can be as follows. During the formation of the CVD film of the plurality of layers 32A to 32E of the third layer 32, the edge is emitted from the side of the second layer 22 by gradually changing conditions such as decane gas flow rate, ammonia gas flow rate, nitrogen flow rate, RF power, and pressure. The light exiting direction gradually reduces the refractive indices of the respective plurality of layers 32A to 32E of the third layer 32.

In the display unit, drive control is performed on each of the light-emitting devices 3D (organic EL devices 10R, 10G, and 10B) in a manner similar to that described in the first embodiment, and display is performed. The functions and effects of the display unit are similar to those of the display unit of the second embodiment.

(Fourth embodiment)

FIG. 9 is a diagram showing a display area in a display unit according to a fourth embodiment of the present invention; One of the cross-sectional configurations of domain 110A. The display unit of the fourth embodiment has a configuration similar to that of the first embodiment, except that one of the organic EL devices 10W that produces white light (one color mixture of blue light LB and yellow light LY) is set to one display. Outside the device. Therefore, elements that are the same as those of the first embodiment will have the same reference element symbols as the reference element symbols of the first embodiment.

A substrate 10, a multilayer film 20, and a resonator structure MC are configured in a manner similar to that of the first embodiment.

The organic EL device 10W includes an organic layer 13 between the lower electrode 11 and an upper electrode 12, and the organic layer 13 includes a light-emitting layer. The lower electrode 11, the organic layer 13, and the upper electrode 12 are laminated in this order from the substrate 10 side.

Here, in the fourth embodiment, the lower electrode 11 corresponds to a specific (but not limited) example of one of the "first electrodes" in the present invention. The upper electrode 12 corresponds to a specific (but not limited) example of one of the "second electrodes" in the present invention.

The lower electrode (anode) 11 and the upper electrode 12 are configured in a manner similar to that of the first embodiment.

The organic layer 13 may have, for example, one of the first light-emitting units 14 that generate yellow light LY (or orange light) sequentially from the lower electrode 11 side, a charge generating layer 15 and a blue light LB (or blue-green light). One of the second lighting units 16 is configured.

The first light emitting unit 14 sequentially includes, for example, a hole injection layer and a hole transport layer 14A, a first light emitting layer 14B, and an electron transport layer 14C from the lower electrode 11 side.

The charge generating layer 15 injects a positive hole into the second light emitting unit 16 disposed on the side of the upper electrode (cathode) 12 when a voltage is applied and also injects into the first light emitting unit 14 disposed on the side of the lower electrode (anode) 11 One layer of an electron. The charge generating layer 15 can be configured by, for example, disposing a metal oxide or a charge transporting compound into a single layer or by doping the metal oxide or the charge transporting compound with an amine compound. . Examples of the metal oxide may include molybdenum oxide (MoO ₃ ), tungsten oxide (WO ₃ ), vanadium oxide (V ₂ O ₅ ), and cerium oxide (Group VII) (Re ₂ O ₇ ). Examples of the charge transporting miscible compound may include porphyrin, metal tetraphenylporphyrin, metal naphthalocyanine, hexacyanothiazepine, 7,7,8,8-tetracyanoquinolodimethane ( TCNQ) and 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinolodimethane (F4-TCNQ).

The second light emitting unit 16 sequentially includes, for example, a hole injection layer and a hole transport layer 16A, a second light emitting layer 16B, an electron transport layer, and an electron injection layer 16C from the charge generation layer 15 side.

The materials of the respective layers of the first light emitting unit 14 and the respective layers of the second light emitting unit 16 are not particularly limited. The hole injection layer can be configured, for example, from a material such as hexaazatriphenylene (HAT). The hole transport layer can be configured, for example, by a hole transport material such as a benzidine derivative, a styrylamine derivative, a triphenylmethane derivative, and an anthracene derivative. The first light-emitting layer 14B and the second light-emitting layer 16B may each comprise, for example, an organic film containing a very small amount of an organic substance such as an anthracene derivative, a coumarin derivative, a pyran-based pigment, and a triphenylamine derivative. configuration. The electron transport layer can be configured, for example, from an electron transport material such as quinoline, hydrazine, distyryl, pyrazine, triazole, oxazole, oxadiazole, fluorenone, and the like. The electron injection layer can be configured, for example, from lithium fluoride (LiF).

In terms of the thickness of each layer of the organic layer 13, preferably, for example, the hole injection layer may be in the range of about 1 nm to about 20 nm, and the hole transport layer may be in the range of about 15 nm to about 100 nm. Within the range of meters, the luminescent layer can range from about 5 nanometers to about 50 nanometers, and the electron transport layer and electron injecting layer can range from about 15 nanometers to about 200 nanometers. Further, the thickness of each of the organic layer 13 and its layers is set to a value such that one of the optical film thicknesses realizes the operation of the resonator structure MC.

For example, the display unit of the fourth embodiment can be manufactured as follows.

First, a pixel circuit 140, a planarization film (not shown), and a lower electrode 11 are formed on the substrate 10 in a manner similar to the first embodiment.

Next, the first light-emitting layer 14, the charge-generating layer 15, and the second light-emitting layer each having the above-described thickness and made of the above-described material are sequentially formed on the lower electrode 11 by, for example, vacuum deposition. 16 to form the organic layer 13.

Subsequently, the upper electrode 12 having the above thickness and made of the above material is formed on the organic layer 13 by, for example, vacuum deposition. Therefore, one of the first interfaces P1 of the resonator structure MC is formed at one end face of the lower electrode 11 on the side of the light-emitting layer 14B, and one of the resonator structures MC is formed at one end face of the upper electrode 12 on the side of the light-emitting layer 16B. The second interface P2.

After the upper electrode 12 is formed, the first layer 21 to the fourth layer 24 each having the above-described thickness and made of the above-described material are formed on the upper electrode 12 in a manner similar to that of the first embodiment to form the multilayer film 20. . A third interface P3 is formed between the first layer 21 of a high refractive index film and the second layer 22 of a low refractive index film as an additional interface of the resonator structure MC. A fourth interface P4 is formed between the second layer 22 of the low refractive index film and the third layer 23 of the high refractive index film as an additional interface of the resonator structure MC.

Subsequently, a bonding layer (not shown) is formed on the multilayer film 20, and a pair of substrates (not shown) are laminated and sealed. Thereby, the display unit shown in FIG. 9 is completed.

In this display unit, drive control is performed on each of the light-emitting devices 3D (organic EL device 10W) in a manner similar to that described in the first embodiment, and monochrome display is performed. The functions and effects of the display unit are similar to those of the display unit of the first embodiment.

It should be noted that any of Modification 1, Modification 2, Second Embodiment, and Third Embodiment described above is also applicable to the fourth embodiment.

(Fifth Embodiment)

Figure 10 is a cross-sectional view showing a display area 110A of a display unit in accordance with a fifth embodiment of the present invention. The display unit of the fifth embodiment comprises an organic EL device 10W which produces white light (one of mixed colors of yellow LY and blue LB) similar to the organic EL device described in the fourth embodiment and is similar to the first embodiment The organic EL device of the organic EL device described in the example produces the organic EL device 10B of the blue light LB as a display device. The display unit of the fifth embodiment performs color display by combining the devices and a color filter 40. Show. In addition, the display unit of the fifth embodiment is similar to the first embodiment and the fourth embodiment in terms of configuration, function and effect, and can be similar to one of the first embodiment and the fourth embodiment. And was made.

The color filter 40 can include, for example, a red filter 40R, a green filter 40G, and a blue filter 40B. The red filter 40R and the green filter 40G are disposed to face the organic EL device 10W that generates white light (a mixed color of yellow LY and blue light LB). The blue filter 40B is disposed to face the organic EL device 10B of the blue light blue LB. It should be noted that the blue filter 40B can be omitted.

The red filter 40R, the green filter 40G, and the blue filter 40B are configured by a resin mixed with respective pigments. The red filter 40R, the green filter 40G, and the blue filter 40B are each adjusted to have high optical transmittance and other wavelengths in a wavelength range of desired red, green, or blue light by selecting a pigment. Low optical transmittance in the range.

Further, one of the high transmittance wavelength ranges in the color filter 40 coincides with one of the peak wavelengths λ of one of the lights desired to be extracted from a resonator structure MC1. Therefore, among the external light incident from the side of the upper electrode 12, only light having a wavelength equal to one of the peak wavelengths λ of the spectrum of the light to be extracted passes through the color filter 40, and has other wavelengths. External light is prevented from entering the organic EL devices 10W and 10B.

It should be noted that any of Modification 1, Modification 2, Second Embodiment, and Third Embodiment described above is also applicable to the fifth embodiment.

(Sixth embodiment)

Figure 11 is a cross-sectional view showing a display area 110A of a display unit in accordance with a sixth embodiment of the present invention. This sixth embodiment is similar to the first embodiment in terms of configuration, function, and effect except that light generated in an illuminating layer 13B is extracted from the side of the lower electrode 11 (bottom emission). Therefore, elements that are the same as those of the first embodiment will have the same reference element symbols as the reference element symbols of the first embodiment.

In the display area 110A, a pixel circuit 140, a planarization film 50, and a multilayer film 20 is sequentially disposed on a substrate 10, and the organic EL devices 10R, 10G, and 10B are disposed on the multilayer film 20. It should be noted that FIG. 11 only shows one of the pixel circuits 140 driving the transistor 3B.

The organic EL devices 10R, 10G, and 10B each include one organic layer 13 between the lower electrode 11 and the upper electrode 12, and the organic layer 13 includes a light-emitting layer. The lower electrode 11, the organic layer 13, and the upper electrode 12 are laminated in this order from the substrate 10 side.

Here, in the sixth embodiment, the lower electrode 11 corresponds to a specific (but not limited) example of one of the "second electrodes" in the present invention. The upper electrode 12 corresponds to a specific (but not limited) example of one of the "first electrodes" in the present invention.

The substrate 10 and the organic layer 13 are configured in a manner similar to that of the first embodiment.

The lower electrode 11 can be configured by, for example, a transparent electrode made of a material such as ITO, IZO (registered trademark), and SnO ₂ .

The upper electrode 12 may be configured by a reflective electrode consisting of a single element or a metal element such as gold (Au), platinum (Pt), nickel (Ni), chromium (Cr), copper (Cu), tungsten (W). ), made of an alloy of aluminum (Al), molybdenum (Mo), and silver (Ag). In addition, the upper electrode 12 may be configured by a composite film of the above reflective electrode and a transparent electrode.

In the sixth embodiment, one of the first interfaces P1 of the resonator structure MC is one end face on the side of the light-emitting layer 13B of the upper electrode 12, and one of the second interfaces P2 of the resonator structure MC is the light-emitting of the lower electrode 11. One end face on the side of layer 13B.

The multilayer film 20 sequentially includes a first layer 21 of a high refractive index film, a second layer 22 of a low refractive index film, a third layer 23 of a high refractive index film, and a low refractive index from the side of the lower electrode 11 One of the rate films is the fourth layer 24. The resonator structure MC has a third interface P3 as an additional interface between the first layer 21 and the second layer 22, and a fourth interface P4 between the second layer 22 and the third layer 23 as an additional interface. . Except for this, the multilayer film 20 is configured in a manner similar to that of the first embodiment.

An optical distance L1 between the first interface P1 and the second interface P2, an optical distance L2 between the first interface P1 and the third interface P3, and between the first interface P1 and the fourth interface P4 An optical distance L3 is similar to the optical distance L1, the optical distance L2, and the optical distance L3 of the first embodiment.

The planarization film 50 is configured to reduce irregularities due to the pixel circuits 140 and the like, and may have a thickness of, for example, about 1 micrometer to about 5 micrometers. The planarization film 50 may be configured by an organic material such as polyimine or an inorganic material such as cerium oxide (SiO ₂ ).

For example, the display unit of the sixth embodiment can be manufactured as follows.

First, the pixel circuit 140 is formed on the substrate 10, and one surface of the substrate 10 is planarized by the planarization film 50. Next, a fourth layer 24 each having the above-described thickness and made of the above-described material to the first layer 21 is formed on the planarizing film 50 to form the multilayer film 20. One method of forming the multilayer film 20 is similar to the method of the first embodiment. A third interface P3 is formed between the first layer 21 and the second layer 22 as an additional interface of the resonator structure MC. A fourth interface P4 is formed between the second layer 22 and the third layer 23 as an additional interface of the resonator structure MC.

Next, on the multilayer film 20, a film of a lower electrode material (not shown) made of, for example, ITO is formed by, for example, sputtering to have a thickness of, for example, about 100 nm. This lower electrode material film is formed into a predetermined shape by using, for example, photolithography and etching to form the lower electrode 11. Subsequently, an electrode separation insulating film (not shown) is formed between the lower electrodes 11 as needed.

Subsequently, in a manner similar to that of the first embodiment, a hole injection layer and a hole transport layer 13A each having the above-described thickness and made of the above material are formed on the lower electrode 11 by, for example, vacuum deposition, The light emitting layer 13B, an electron transport layer, and an electron injection layer 13C are formed to form the organic layer 13.

After the organic layer 13 is formed, the upper electrode 12 having the above thickness and made of the above material is formed on the organic layer 13 by, for example, vacuum deposition. Therefore, the second interface P2 of the resonator structure MC is formed at the end face on the side of the light-emitting layer 13B of the lower electrode 11, and the first interface P1 of the resonator structure MC is formed at the end face on the side of the light-emitting layer 13B of the upper electrode 12.

Subsequently, a bonding layer (not shown) is formed on the multilayer film 20, and laminated and sealed. A pair of substrates (not shown). Thereby, the display unit shown in FIG. 11 is completed.

In the display unit, drive control is performed on each of the light-emitting devices 3D (organic EL devices 10R, 10G, and 10B) in a manner similar to that described in the first embodiment, and display is performed. The functions and effects of the display unit are similar to those of the display unit of the first embodiment.

It should be noted that any of Modification 1, Modification 2, Second Embodiment, and Third Embodiment is also applicable to the sixth embodiment.

(Modification 3)

Figure 12 illustrates a cross-sectional configuration of one of the display areas 110A in one of the display units in accordance with a modification 3. Modification 3 is equivalent to the sixth embodiment except that the fourth layer 24 of the multilayer film 20 also functions as the planarization film 50. In addition to this, Modification 3 is similar to the sixth embodiment in terms of configuration, function, and effect, and can be manufactured in a manner similar to one of the sixth embodiments.

It should be noted that any of Modification 1, Modification 2, Second Embodiment, and Third Embodiment is also applicable to Modification 3.

(example)

Further, a specific example of the invention will be described.

(Example 1)

The display unit of the first embodiment is produced. In this procedure, the first layer 21 to the fourth layer 24 of the multilayer film 20 are each configured by a SiNx film, as shown in FIG.

(Comparative example 1)

A display unit was produced in a manner similar to that of Example 1, except that a single-layer protective film 60 (shown in FIG. 14) made of a SiNx film was disposed on the outside of one of the upper electrodes. The refractive index n60 of one of the protective films 60 is assumed to be constant.

(viewing nature)

Each of the obtained display units that caused each of Example 1 and Comparative Example 1 emits white light, And one color change (Δu'v') when viewing the light-emitting surface from the front side (0 degree) to the light-emitting surface from an oblique direction (15 degrees, 30 degrees, 45 degrees, and 60 degrees) was examined. Figure 15 depicts the results.

As shown in FIG. 15, the chromaticity change due to the viewing angle was significantly suppressed in Example 1 as compared with the chromaticity change of Comparative Example 1. In other words, it has been found that a multilayer film 20 in which a high refractive index film and a low refractive index film are alternately laminated is provided on the outer side of the upper electrode 12 and is disposed between the high refractive index film and the low refractive index film of the multilayer film 20. One or more additional interfaces make it easier to reduce viewing angle dependencies.

[Example 2]

A display unit is produced in a manner similar to that of the example 1. In this procedure, the second layer 22 (low refractive index film) of the multilayer film 20 is configured by a SiOx film, as illustrated in FIG.

(high temperature storage characteristics)

For the obtained display unit of each of Examples 1 and 2, the incidence of one pixel erosion after storage at a temperature of about 80 degrees Celsius and a humidity of about 90% was examined. Figure 17 shows the results.

As shown in FIG. 17, the pixel erosion occurrence rate in Example 1 was improved as compared with the pixel erosion efficiency in Example 2. In other words, we have found that by configuring the multilayer film 20 with one of the main components of bismuth (Si) and nitrogen (N) as a main component, it is possible to obtain a film which is closely packed and has a low water content (even formed by low temperature CVD). ), and also allows to improve the passivation efficiency of the multilayer film 20, as well as to allow for enhanced high temperature storage characteristics and reliability.

(Applications)

Next, an application example of the display unit according to any of the above embodiments will be described with reference to FIGS. 18 to 29. The display unit according to each of the above embodiments can be applied to electronic devices in all fields, which display an externally input image signal or an internally generated image signal as a still or moving image. The electronic devices may include, for example, television receivers, digital cameras, laptops, portable terminals (such as portable telephones and smart phones) Words, and cameras) and the like.

(module)

The display unit according to any of the above embodiments can be incorporated into any of various electronic devices such as Application Examples 1 to 7 to be described later, for example, as one of the modules illustrated in FIG. In the module, for example, an external connection terminal (not shown) may be formed in one of the frame regions 110B of the substrate 10 by extending the wiring. The external connection terminal can have a flexible printed circuit (FPC) 150 for input and output signals.

(Application example 1)

19 and 20 each illustrate an appearance of an electronic book 210 on which one of the display units of any of the above embodiments is applied. The e-book 210 can include, for example, a display section 211 and a non-display section 212, and the display section 211 is configured using a display unit according to any of the above embodiments.

(Application example 2)

21 and 22 each illustrate an appearance of one of the smart phones 220 to which the display unit of any of the above embodiments is applied. The smart phone 220 can include, for example, a display section 221 and an operating section 222 on a front side, and includes a camera 223 on a rear side. The display section 221 is configured using the display unit according to any of the above embodiments.

(Application example 3)

Figure 23 is a diagram showing the appearance of one of the television receivers 230 on which the display unit of any of the above embodiments is applied. The television receiver 230 can include, for example, an image display screen section 233 that includes a front panel 231 and a filter glass 232. The image display screen section 233 is configured using the display unit according to any of the above embodiments.

(Application example 4)

24 and 25 each illustrate an appearance of one of the digital cameras 240 to which the display unit of any of the above embodiments is applied. The digital camera 240 can include, for example, a flash emission section 241, a display section 242, a menu switch 243, and a shutter switch 244. Use basis The display unit 242 is configured by a display unit of any of the above embodiments.

(Application example 5)

Figure 26 is a diagram showing the appearance of one of the laptop computers 250 on which the display unit of any of the above embodiments is applied. The laptop 250 can include, for example, a body section 251, a keyboard 252 that is configured to input characters and the like, and an image display section 253 that displays an image. The display section 253 is configured using the display unit according to any of the above embodiments.

(Application example 6)

Figure 27 is a diagram showing the appearance of one of the cameras 260 on which the display unit of any of the above embodiments is applied. The camera 260 can include, for example, a body section 261, a lens 262 disposed on a front surface of one of the body sections 261 to capture an image of an object, a photographing start/stop switch 263, and a display section 264. The display section 264 is configured using a display unit according to any of the above embodiments.

(Application example 7)

28 and 29 each illustrate an appearance of one of the portable telephones 270 on which the display unit of any of the above embodiments is applied. The portable telephone 270 can be, for example, a unit of an upper housing 271 and a lower housing 272 connected by a coupling section (a hinge section) 273, and can include a display 274, a sub-display 275, A flash 276 and a camera 277. The display 274 or sub-display 275 is configured using a display unit according to any of the above embodiments.

The present invention has been described with reference to the exemplary embodiments and some examples, but not limited thereto, and the invention may be modified in various ways.

For example, in the organic EL device 10W described in each of the fourth embodiment and the fifth embodiment, the first light-emitting unit 14 that generates yellow light LY is not provided, but one light-emitting unit that generates green light and One of the red light emitting units generates white light by mixing colors of one of red light, green light, and blue light.

In addition, the materials and thickness or film formation of the respective layers described in each of the examples The methods and film forming conditions are illustrative and not limiting. Other materials and thicknesses or film forming methods and film forming conditions therein may be employed.

Further, the embodiments and examples have been described above with reference to specific configurations of the organic EL devices 10R, 10G, 10B, and 10W. However, it is not necessary to provide all layers, and other layers may be further provided.

Further, the present invention is applicable to a display unit using one of an inorganic EL device or an electrophoretic display device other than an organic EL device.

It should be noted that the present invention can be configured as follows.

(1) A display unit comprising: a display device comprising a light-emitting layer between a first electrode and a second electrode, and comprising a resonator structure for resonating light between the plurality of interfaces, the Light is generated in the light emitting layer, wherein the display device includes a multilayer film in which a high refractive index film and a low refractive index film are alternately laminated, the multilayer film is disposed on an outer side of one of the second electrodes, and the resonator The structure has a first interface on the first electrode side, a second interface on the second electrode side, and one or more additional interfaces, and the one or more additional interfaces are disposed on the high refractive layer of the multilayer film Between the rate film and the low refractive index film.

(2) The display unit of (1), wherein the multilayer film is configured by a film having ruthenium (Si) and nitrogen (N) as main components.

(3) The display unit of (1) or (2), wherein the multilayer film comprises, in order from the second electrode side, a first layer of a high refractive index film, a second layer of a low refractive index film, a third layer of a high refractive index film and a fourth layer of a low refractive index film, and the resonator structure has a third interface between the first layer and the second layer as the additional interface, and A fourth interface is formed between the second layer and the third layer as the additional interface.

(4) The display unit of (1) or (2), wherein the multilayer film sequentially comprises a first layer of a high refractive index film and a second layer of a low refractive index film from the second electrode side. And a third layer having a refractive index that decreases from a side of the second layer along a direction of emission of light, and the resonator structure has a first layer between the first layer and the second layer The third interface serves as the additional interface.

(5) The display unit of (1) or (2), wherein the multilayer film sequentially comprises a first layer of a high refractive index film and a second layer of a low refractive index film from the second electrode side. And a third layer having a stacked structure of a plurality of layers, and the plurality of layers have respective refractive indices gradually decreasing from a side of the second layer along a direction of emission of light, and the resonator structure A third interface is formed between the first layer and the second layer as the additional interface.

(6) The display unit according to any one of (1) to (5), wherein one of the NH stretching vibrations belonging to about 3350 cm ^-1 in a Fourier transform infrared spectrometer spectrum is assumed to be "A" and belongs to When one of the Si-H stretching vibrations of about 2160 cm ^-1 is assumed to be "B", the B/A ratio of one of the layers of the multilayer film closest to the second electrode is larger than the farthest of the multilayer film One of the B/A ratios of one of the layers of the second electrode.

The display unit according to any one of (1) to (6), wherein a layer of the multilayer film farthest from the second electrode has a thickness of about 1 μm or more.

(8) The display unit according to any one of (1) to (7), wherein a layer of the multilayer film farthest from the second electrode has an extinction coefficient of about 0.01 or less.

(9) The display unit of any one of (1) to (8), wherein the display device is configured to emit each of a plurality of display devices that emit light of a single color different from each other, the light rays being in the visible light region in.

The display unit of any one of (1) to (8), wherein the display device produces white light.

(11) The display unit of any one of (1) to (8), wherein the display device is configured to include each of a plurality of display devices that generate white light-emitting device and white light-emitting device And a red filter and a green filter are disposed to face the white light emitting device.

(12) A method of manufacturing a display unit comprising a display device, the display device comprising a light-emitting layer between a first electrode and a second electrode, and comprising one of resonating light between the plurality of interfaces a resonator structure, the light is generated in the light emitting layer, the method comprising: forming the first electrode, the light emitting layer and the second electrode, and forming one of the resonator structures on the first electrode side first Forming a second interface of the resonator structure on the second electrode side; and forming a multilayer film in which a high refractive index film and a low refractive index film are alternately laminated, the multilayer film being disposed on the second electrode One of the outer sides; and one or a plurality of additional interfaces are also formed, and the one or more additional interfaces are formed between the high refractive index film of the multilayer film and the low refractive index film.

(13) The method of (12), wherein the multilayer film is configured by a film having ruthenium (Si) and nitrogen (N) as main components.

(14) The method of (13), wherein the multilayer film is formed by low temperature chemical vapor deposition, and the refractive index of the high refractive index film and the low refractive index film is varied by adjusting a chemical vapor deposition condition .

(15) The method of (14), wherein the multilayer film is formed at a temperature of about 150 degrees Celsius or lower.

(16) An electronic device comprising a display unit, the display unit comprising: a display device comprising a light between a first electrode and a second electrode a layer, and also including a resonator structure that resonates light between the plurality of interfaces, the light being generated in the light-emitting layer, wherein the display device comprises one in which a high-refractive-index film and a low-refractive-index film are alternately stacked a film, the multilayer film is disposed on an outer side of the second electrode, and the resonator structure has a first interface on the first electrode side, a second interface on the second electrode side, and a A plurality of additional interfaces, the one or more additional interfaces being disposed between the high refractive index film of the multilayer film and the low refractive index film.

The present invention contains subject matter related to that disclosed in Japanese Priority Patent Application No. JP 2012-199640, filed on Sep.

It will be appreciated by those skilled in the art that various modifications, combinations, sub-combinations and changes may be made in accordance with the design requirements and other factors, as long as they are within the scope of the accompanying claims or their equivalents.

110A‧‧‧Display area

121‧‧‧Horizontal selector

131‧‧‧Write scanner

132‧‧‧Power supply scanner

Claims (16)

A display unit comprising: a display device comprising a light-emitting layer between a first electrode and a second electrode, and comprising a resonator structure for resonating light between the plurality of interfaces, the light being generated In the light-emitting layer, the display device includes a multilayer film in which a high refractive index film and a low refractive index film are alternately laminated, the multilayer film is disposed on an outer side of one of the second electrodes, and the resonator structure has the a first interface on the first electrode side, a second interface on the second electrode side, and one or more additional interfaces, the one or more additional interfaces being disposed on the high refractive index film of the multilayer film Between the low refractive index films. The display unit of claim 1, wherein the multilayer film is configured by a film having ruthenium (Si) and nitrogen (N) as main components. The display unit of claim 1, wherein the multilayer film sequentially comprises a first layer of a high refractive index film, a second layer of a low refractive index film, and a high refractive index film from the second electrode side. a fourth layer and a fourth layer of a low refractive index film, and the resonator structure has a third interface between the first layer and the second layer as the additional interface, and in the second layer There is a fourth interface between the third layers as the additional interface. The display unit of claim 1, wherein the multilayer film sequentially comprises a first layer of a high refractive index film, a second layer of a low refractive index film, and a third layer from the second electrode side. The third layer has a refractive index that decreases continuously from the side of the second layer along a direction of emission of light, and The resonator structure has a third interface between the first layer and the second layer as the additional interface. The display unit of claim 1, wherein the multilayer film sequentially comprises a first layer of a high refractive index film, a second layer of a low refractive index film, and a third layer from the second electrode side. The third layer has a laminated structure of a plurality of layers, and the plurality of layers have respective refractive indices gradually decreasing from a side of the second layer along a direction of emission of light, and the resonator structure is in the first layer and the A third interface is provided between the second layers as the additional interface. The display unit of claim 1, wherein one of the NH stretching vibrations belonging to about 3350 cm ^-1 in a Fourier transform infrared spectrometer spectrum is assumed to be "A" and belongs to Si-H stretching vibration of about 2160 cm ^-1 . When a peak intensity is assumed to be "B", a B/A ratio of one of the layers of the multilayer film closest to the second electrode is greater than a B/A ratio of one of the multilayer films farthest from the second electrode. . The display unit of claim 1, wherein the layer of the multilayer film that is furthest from the second electrode has a thickness of about 1 micron or more. The display unit of claim 1, wherein the layer of the multilayer film farthest from the second electrode has an extinction coefficient of about 0.01 or less. The display unit of claim 1, wherein the display device is configured to emit each of a plurality of display devices that emit light of a single color different from each other, the light being in a visible light region. The display unit of claim 1, wherein the display device produces white light. The display unit of claim 1, wherein the display device is configured to include each of a plurality of display devices that generate white light and a blue light emitting device, and a red filter and a green filter. The light is set to face the white light emitter Pieces. A method of fabricating a display unit comprising a display device, the display device comprising a light-emitting layer between a first electrode and a second electrode, and also comprising a resonator structure for resonating light between the plurality of interfaces The light is generated in the light emitting layer, the method includes: forming the first electrode, the light emitting layer, and the second electrode, and forming a first interface of the resonator structure on the first electrode side and Forming a second interface of the resonator structure on the second electrode side; and forming a multilayer film in which a high refractive index film and a low refractive index film are alternately laminated, the multilayer film being disposed outside one of the second electrodes And forming one or a plurality of additional interfaces of the resonator structure, the one or more additional interfaces being formed between the high refractive index film of the multilayer film and the low refractive index film. The method of claim 12, wherein the multilayer film is configured by a film having ruthenium (Si) and nitrogen (N) as a main component. The method of claim 13, wherein the multilayer film is formed by low temperature chemical vapor deposition, and the refractive index of the high refractive index film and the low refractive index film is varied by adjusting a chemical vapor deposition condition. The method of claim 14, wherein the multilayer film is formed at a temperature of about 150 degrees Celsius or less. An electronic device comprising a display unit, the display unit comprising: a display device comprising a light-emitting layer between a first electrode and a second electrode, and also comprising one of resonating light between the plurality of interfaces a resonator structure, wherein the light is generated in the light emitting layer, wherein the display device comprises a multilayer film in which a high refractive index film and a low refractive index film are alternately laminated, the multilayer film being disposed on an outer side of one of the second electrodes And the resonator structure has a first interface on the first electrode side, the second electrical One of the second interfaces on the pole side, and one or more additional interfaces, the one or more additional interfaces being disposed between the high refractive index film of the multilayer film and the low refractive index film.