TW201406966A - Method of recovering elemental metal from polycrystalline semiconductor production - Google Patents
Method of recovering elemental metal from polycrystalline semiconductor production Download PDFInfo
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- TW201406966A TW201406966A TW102123682A TW102123682A TW201406966A TW 201406966 A TW201406966 A TW 201406966A TW 102123682 A TW102123682 A TW 102123682A TW 102123682 A TW102123682 A TW 102123682A TW 201406966 A TW201406966 A TW 201406966A
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- metal
- elemental
- chloride
- gaseous stream
- zinc
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- 239000002184 metal Substances 0.000 title claims abstract description 109
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 104
- 238000000034 method Methods 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000004065 semiconductor Substances 0.000 title description 4
- 229910001510 metal chloride Inorganic materials 0.000 claims abstract description 112
- 239000000203 mixture Substances 0.000 claims abstract description 48
- 239000007789 gas Substances 0.000 claims abstract description 38
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 35
- 238000011084 recovery Methods 0.000 claims abstract description 27
- 239000001257 hydrogen Substances 0.000 claims abstract description 24
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 24
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 21
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 13
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000005984 hydrogenation reaction Methods 0.000 claims abstract description 5
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000005052 trichlorosilane Substances 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims description 76
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical group [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 54
- IREVRWRNACELSM-UHFFFAOYSA-J ruthenium(4+);tetrachloride Chemical compound Cl[Ru](Cl)(Cl)Cl IREVRWRNACELSM-UHFFFAOYSA-J 0.000 claims description 53
- 238000010438 heat treatment Methods 0.000 claims description 50
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 47
- 239000011701 zinc Substances 0.000 claims description 47
- 229910052725 zinc Inorganic materials 0.000 claims description 46
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 37
- 229910052732 germanium Inorganic materials 0.000 claims description 30
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 30
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 28
- 229910052707 ruthenium Inorganic materials 0.000 claims description 28
- 239000011592 zinc chloride Substances 0.000 claims description 27
- 235000005074 zinc chloride Nutrition 0.000 claims description 27
- 229910052684 Cerium Inorganic materials 0.000 claims description 22
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 22
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 18
- 229960001701 chloroform Drugs 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 15
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 14
- HBBBDGWCSBWWKP-UHFFFAOYSA-J tetrachloroantimony Chemical compound Cl[Sb](Cl)(Cl)Cl HBBBDGWCSBWWKP-UHFFFAOYSA-J 0.000 claims description 13
- 239000007787 solid Substances 0.000 claims description 11
- 238000009833 condensation Methods 0.000 claims description 8
- 230000005494 condensation Effects 0.000 claims description 8
- 239000012530 fluid Substances 0.000 claims description 7
- 239000001307 helium Substances 0.000 claims description 7
- 229910052734 helium Inorganic materials 0.000 claims description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 2
- 229910052747 lanthanoid Inorganic materials 0.000 claims 1
- 150000002602 lanthanoids Chemical class 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 abstract 3
- 239000005049 silicon tetrachloride Substances 0.000 abstract 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 230000008569 process Effects 0.000 description 27
- 150000002739 metals Chemical class 0.000 description 19
- 239000000463 material Substances 0.000 description 11
- KHPNGCXABLTQFJ-UHFFFAOYSA-N 1,1,1-trichlorodecane Chemical compound CCCCCCCCCC(Cl)(Cl)Cl KHPNGCXABLTQFJ-UHFFFAOYSA-N 0.000 description 7
- 238000009835 boiling Methods 0.000 description 7
- 230000007613 environmental effect Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- BBLKWSIOIYLDHV-UHFFFAOYSA-J cerium(4+);tetrachloride Chemical compound Cl[Ce](Cl)(Cl)Cl BBLKWSIOIYLDHV-UHFFFAOYSA-J 0.000 description 5
- 238000006722 reduction reaction Methods 0.000 description 5
- 239000002699 waste material Substances 0.000 description 5
- ZTEHOZMYMCEYRM-UHFFFAOYSA-N 1-chlorodecane Chemical compound CCCCCCCCCCCl ZTEHOZMYMCEYRM-UHFFFAOYSA-N 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 2
- 238000005345 coagulation Methods 0.000 description 2
- 230000015271 coagulation Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002923 oximes Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000010977 unit operation Methods 0.000 description 2
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- WORJRXHJTUTINR-UHFFFAOYSA-N 1,4-dioxane;hydron;chloride Chemical class Cl.C1COCCO1 WORJRXHJTUTINR-UHFFFAOYSA-N 0.000 description 1
- YMEKHGLPEFBQCR-UHFFFAOYSA-N 2,2,3,3,5,5-hexachloro-1,4-dioxane Chemical compound ClC1(OC(C(OC1)(Cl)Cl)(Cl)Cl)Cl YMEKHGLPEFBQCR-UHFFFAOYSA-N 0.000 description 1
- PVZGTAUFGOQIAG-UHFFFAOYSA-N 2,2,3,3,5-pentachloro-1,4-dioxane Chemical compound ClC1OC(C(OC1)(Cl)Cl)(Cl)Cl PVZGTAUFGOQIAG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- ICGLOTCMOYCOTB-UHFFFAOYSA-N [Cl].[Zn] Chemical compound [Cl].[Zn] ICGLOTCMOYCOTB-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical group CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000008235 industrial water Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 239000010909 process residue Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Silicon Compounds (AREA)
Abstract
Description
本申請案主張在2012年7月2日申請之美國臨時專利申請案61/667,145的優先權,將該案以引用其全文的方式併入本文。 The present application claims priority to U.S. Provisional Patent Application Serial No. 61/667,145, filed on Jan.
本發明基本上係關於一種自半導體製程回收元素金屬的方法。更具體言之,本發明係關於一種自半導體製程期間所產生之金屬氯化物回收元素金屬之方法。 The present invention is basically directed to a method of recovering elemental metals from a semiconductor process. More specifically, the present invention relates to a method of recovering elemental metals from metal chlorides produced during semiconductor processing.
已知可藉由各種方法形成多晶矽。其中一種用於形成多晶矽之方法涉及分解矽烷。在此種方法中,將包含氫氣及矽烷(SiH4)混合物或氫氣及三氯矽烷混合物之進料氣體饋送至含有基本上呈棒(在西門子(Siemens)反應器中)或丸粒(在流化床反應器中)形式之多晶矽晶種基材之分解反應器中,維持多晶矽晶種基材在高於1000℃之溫度下。矽會沈積在多晶矽晶種基材上而副產物氣體混合物則隨著排出流離開。當使用包含氫氣及三氯矽烷之混合物時,諸如在西門子方法中,排氣流可包含氫氣、氯化氫、氯矽烷、矽烷及矽粉。就此申請案之目的而言,術語「氯矽烷」係指具有一或多個氯原子鍵結至矽之任何矽烷物質且包括(但不限於)單氯矽烷(H3SiCl)、二氯矽烷(H2SiCl2)、三氯矽烷(HSiCl3)、四氯化矽(SiCl4),及各種氯化二 矽烷(諸如六氯二矽烷及五氯二矽烷)。在排出流中,氫氣及氯矽烷(諸如四氯化矽及三氯矽烷)係來自未反應的進料氣體及來自分解反應之反應產物。排出流典型地會經過複雜的回收過程,其中冷凝、洗滌、吸收及吸附是常用來輔助捕獲用於再循環之三氯矽烷、氫氣及/或稀釋(例如,惰性)氣體之單元操作。 It is known that polycrystalline germanium can be formed by various methods. One method for forming polycrystalline germanium involves the decomposition of decane. In this method, a feed gas comprising a mixture of hydrogen and decane (SiH 4 ) or a mixture of hydrogen and trichloromethane is fed to a substantially rod (in a Siemens reactor) or pellet (in a stream) In a decomposition reactor of a polycrystalline germanium seed substrate in the form of a chemical bed reactor, the polycrystalline germanium seed substrate is maintained at a temperature above 1000 °C. The ruthenium will deposit on the polycrystalline cerium seed substrate while the byproduct gas mixture will exit with the effluent stream. When a mixture comprising hydrogen and trichloromethane is used, such as in the Siemens process, the exhaust stream may comprise hydrogen, hydrogen chloride, chlorodecane, decane and tantalum powder. For the purposes of this application, the term "chloromethane" means any decane species having one or more chlorine atoms bonded to hydrazine and includes, but is not limited to, monochlorodecane (H 3 SiCl), dichloromethane ( H 2 SiCl 2 ), trichlorodecane (HSiCl 3 ), ruthenium tetrachloride (SiCl 4 ), and various dioxane chlorides (such as hexachlorodioxane and pentachlorodioxane). In the effluent stream, hydrogen and chlorodecane (such as ruthenium tetrachloride and trichloromethane) are derived from the unreacted feed gas and the reaction product from the decomposition reaction. The effluent stream typically undergoes a complex recovery process in which condensation, scrubbing, absorption, and adsorption are commonly used to assist in the capture of unit operations for recycle of trichloromethane, hydrogen, and/or dilute (e.g., inert) gases.
雖然西門子方法可用於形成電子級多晶矽,然而西門子方法存在一個問題,即因控制此反應過程之化學平衡及動力學之故,難以自饋送矽達成高多晶矽產率。 Although the Siemens method can be used to form electronic grade polysilicon, the Siemens method has a problem in that it is difficult to achieve high polycrystalline germanium yield from the feed due to the chemical equilibrium and kinetics of the reaction.
用於製造多晶矽之另一方法係四氯化矽之鋅還原法。特定言之,四氯化矽之鋅還原法涉及將四氯化矽及元素鋅饋送至流化床反應器中,藉此製造多晶矽及氯化鋅。雖然四氯化矽之鋅還原法亦可用於形成高級多晶矽,但此方法需要處理氯化鋅副產物及自其中回收鋅。然而,鋅回收技術的最新發展已改善藉由四氯化矽之鋅還原法製造多晶矽的前景。 Another method for producing polycrystalline germanium is the zinc reduction of ruthenium tetrachloride. In particular, the zinc reduction process of antimony tetrachloride involves feeding hafnium tetrachloride and elemental zinc into a fluidized bed reactor, thereby producing polycrystalline germanium and zinc chloride. Although the zinc reduction method of antimony tetrachloride can also be used to form advanced polycrystalline germanium, this method requires treatment of zinc chloride by-products and recovery of zinc therefrom. However, recent developments in zinc recovery technology have improved the prospects for polycrystalline germanium by zinc reduction of ruthenium tetrachloride.
鑒於上述內容,仍有機會提供自多晶矽製程回收元素金屬之改良方法。 In view of the above, there is still an opportunity to provide an improved method for recovering elemental metals from the polysilicon process.
本發明提供一種方法,其包括步驟將氫氣及包含三氯矽烷之含矽烷進料氣體導入至含有多晶矽晶種基材之一或多個分解反應器中。三氯矽烷與氫氣在分解反應器中進行反應而形成多晶矽。將包含四氯化矽之氣態流從一或多個分解反應器排出。將氣態流及與四氯化矽呈反應性之元素金屬源饋送至回收反應器中。四氯化矽與元素金屬會進行反應以產生多晶矽及包含金屬氯化物之第一組合物。藉由以下方式中之至少一種自第一組合物中之金屬氯化物回收元素金屬:1)將包含金屬氯化物之第一組合物進行氫化以產生元素金屬及氯化氫,或2)使第一組合物中之金屬氯化物與元素矽反應。 The present invention provides a process comprising the steps of introducing hydrogen and a decane-containing feed gas comprising trichloromethane into one or more decomposition reactors comprising a polycrystalline germanium seed substrate. The chlorosilane is reacted with hydrogen in a decomposition reactor to form polycrystalline ruthenium. A gaseous stream comprising ruthenium tetrachloride is withdrawn from one or more decomposition reactors. A gaseous stream and an elemental metal source reactive with ruthenium tetrachloride are fed to the recovery reactor. The antimony tetrachloride reacts with the elemental metal to produce polycrystalline germanium and a first composition comprising the metal chloride. The elemental metal is recovered from the metal chloride in the first composition by at least one of the following: 1) hydrogenating the first composition comprising the metal chloride to produce an elemental metal and hydrogen chloride, or 2) making the first combination The metal chloride in the substance reacts with the element hydrazine.
透過將用於在分解反應器(如西門子反應器)中藉由三氯矽烷分解產生多晶矽之方法與用於藉由鋅與存在自分解反應器排出之氣態流中的四氯化矽之反應產生多晶矽的方法組合,可提高自饋送至分解反應器之矽獲得多晶矽的產率,同時消耗存在自分解反應器排出之氣態流中之組分。此外,透過自第一組合物中之金屬氯化物回收元素金屬,可將所回收之元素金屬再循環至製程內以有效地達成閉路製程,進而儘可能減少廢料流體積及儘可能最大化多晶矽之產率。 Produced by reacting polycrystalline germanium by decomposition of trichlorosilane in a decomposition reactor (such as a Siemens reactor) with ruthenium tetrachloride in a gaseous stream discharged from zinc in the presence of a self-decomposing reactor The combination of polycrystalline ruthenium methods increases the yield of polycrystalline germanium from the feed to the decomposition reactor while consuming the components present in the gaseous stream exiting the decomposition reactor. In addition, by recovering the elemental metal from the metal chloride in the first composition, the recovered elemental metal can be recycled into the process to effectively achieve a closed circuit process, thereby minimizing the volume of the waste stream and maximizing the polysilicon as much as possible. Yield.
10‧‧‧設備 10‧‧‧ Equipment
12‧‧‧加熱區 12‧‧‧heating area
14‧‧‧溫度調控區 14‧‧‧temperature control zone
16‧‧‧冷卻區 16‧‧‧Cooling area
18‧‧‧托盤 18‧‧‧Tray
20‧‧‧側壁 20‧‧‧ side wall
22‧‧‧穿孔 22‧‧‧Perforation
24‧‧‧收集室 24‧‧‧ collection room
當結合附圖予以考量並參考以下詳細敘述時,可輕易瞭解且更佳地理解本發明之其他優點,其中:圖1係圖示本發明方法之一實施例之示意性流程圖,該方法包括步驟:產生三氯矽烷、分解三氯矽烷、使四氯化矽與元素金屬(例如,鋅)反應、自金屬氯化物回收元素金屬及將元素金屬及四氯化矽再循環至使四氯化矽與元素金屬反應之步驟中;圖2係圖示本發明方法之一實施例之示意性流程圖,該方法包括步驟:產生三氯矽烷、分解三氯矽烷、使四氯化矽與元素金屬(例如,鋅)反應、自金屬氯化物回收元素金屬、將元素金屬再循環至使四氯化矽與元素金屬反應之步驟中;及將HCl再循環至產生三氯矽烷之步驟中;及圖3係根據本發明方法之一實施例可用於回收元素金屬之反應器之示意圖。 Other advantages of the present invention will be readily understood and better understood by reference to the following detailed description in which <RTIgt; Step: producing trichlorosilane, decomposing trichloromethane, reacting antimony tetrachloride with elemental metal (for example, zinc), recovering elemental metal from metal chloride, and recycling elemental metal and antimony tetrachloride to tetrachlorinate Figure 2 is a schematic flow diagram showing an embodiment of the process of the present invention, the process comprising the steps of: producing trichlorodecane, decomposing trichloromethane, and causing antimony tetrachloride and elemental metal (for example, zinc) reaction, recovery of elemental metal from metal chloride, recycling of elemental metal to the step of reacting antimony tetrachloride with elemental metal; and recycling of HCl to the step of producing trichloromethane; 3 is a schematic diagram of a reactor that can be used to recover elemental metals in accordance with one embodiment of the process of the present invention.
本發明提供一種方法,其涉及大體上藉由組合以下方式產生多晶矽:1)使氫氣與三氯矽烷在一或多個分解反應器中反應,及2)使自一或多個分解反應器排出之氣態流中的四氯化矽與元素金屬在一或多個回收反應器中反應。藉由提供自一或多個分解反應排出之氣態流 中之四氯化矽,可提高多晶矽(基本上而言,為高品質(諸如)太陽能等級矽)之產率。 The present invention provides a method for producing polycrystalline germanium substantially by combining: 1) reacting hydrogen with trichloromethane in one or more decomposition reactors, and 2) discharging one or more decomposition reactors The ruthenium tetrachloride in the gaseous stream is reacted with the elemental metal in one or more recovery reactors. By providing a gaseous stream that is discharged from one or more decomposition reactions In the case of ruthenium tetrachloride, the yield of polycrystalline germanium (basically, high quality (such as solar grade 矽) can be increased.
本發明方法包括步驟:產生意欲用於製造多晶矽之包含三氯矽烷之含矽烷進料氣體,如圖1及2中之數字30所示。技藝中用於產生三氯矽烷的已知一技術係直接法,其涉及氯化氫與矽源反應以形成諸如三氯矽烷及四氯化矽之氯矽烷。直接法涉及使用流化床反應器,且可為連續方法。可自產物流分離藉由該直接法產生之四氯化矽、諸如HCl之未反應進料氣體、夾帶在產物流中之顆粒及除三氯矽烷以外之其他反應產物氣體,以產生含矽烷進料氣體並將其饋送至一或多個分解反應器中。或者,所獲得且意欲饋送至一或多個分解反應器中之含矽烷進料氣體仍可留有一些未經分離的氣態產物,如四氯化矽。 The process of the present invention comprises the step of producing a decane-containing feed gas comprising trichloromethane intended for use in the manufacture of polycrystalline germanium, as indicated by numeral 30 in Figures 1 and 2. A known technique in the art for producing trichloromethane is a direct process involving the reaction of hydrogen chloride with a source of helium to form a chlorodecane such as trichloromethane and ruthenium tetrachloride. The direct process involves the use of a fluidized bed reactor and can be a continuous process. The ruthenium tetrachloride produced by the direct process, the unreacted feed gas such as HCl, the particles entrained in the product stream, and other reaction product gases other than trichloromethane may be separated from the product stream to produce decane-containing gas. The gas is fed to one or more decomposition reactors. Alternatively, the decane-containing feed gas obtained and intended to be fed to one or more decomposition reactors may still contain some unseparated gaseous products, such as ruthenium tetrachloride.
如上文所提及,該方法包括步驟:將氫氣及包含三氯矽烷之含矽烷進料氣體導入至一或多個分解反應器中,如圖1及2中之數字32所示。分解反應器含有多晶矽晶種基材。例如,一般將西門子反應器用作分解反應器,其含有呈多晶矽晶種棒形式之多晶矽晶種基材。或者,將流化床反應器用作分解反應器,在此情況中,多晶矽晶種基材係呈多晶矽晶種粒子之形式。 As mentioned above, the method comprises the steps of introducing hydrogen and a decane-containing feed gas comprising trichloromethane into one or more decomposition reactors, as indicated by numeral 32 in Figures 1 and 2. The decomposition reactor contains a polycrystalline germanium seed substrate. For example, a Siemens reactor is typically used as a decomposition reactor containing a polycrystalline germanium seed substrate in the form of a polycrystalline twin seed. Alternatively, a fluidized bed reactor is used as the decomposition reactor, in which case the polycrystalline seed crystal substrate is in the form of polycrystalline seed particles.
本文所採用之西門子反應器為習知西門子反應器。例如,西門子反應器可如下操作。將多晶矽晶種棒在西門子反應器中放置成豎直且彼此平行。可藉由架接物將此等晶種棒中之兩或更多者彼此連接,藉此形成U型棒。加熱U型棒直至其等達到約700℃至約1,400℃、約1,000℃至約1,200℃或約1,100℃至約1,150℃之溫度範圍。可在約13kPa(2psig)至約3450kPa(500psig)、約6kPa(1psig)至約1380kPa(200psig)或約100kPa(1bar)至約690kPa(100psig)之壓力範圍下操作西門子反應器。 The Siemens reactor used herein is a conventional Siemens reactor. For example, the Siemens reactor can be operated as follows. The polycrystalline twin seed rods were placed vertically and parallel to each other in a Siemens reactor. Two or more of the seed rods may be joined to each other by a bridge, thereby forming a U-shaped rod. The U-shaped rod is heated until it reaches a temperature ranging from about 700 ° C to about 1,400 ° C, from about 1,000 ° C to about 1,200 ° C or from about 1,100 ° C to about 1,150 ° C. The Siemens reactor can be operated at a pressure ranging from about 13 kPa (2 psig) to about 3450 kPa (500 psig), from about 6 kPa (1 psig) to about 1380 kPa (200 psig), or from about 100 kPa (1 bar) to about 690 kPa (100 psig).
一般將含矽烷進料氣體經由基部中之入口饋送至西門子反應 器。如上所述,含矽烷進料氣體包含氫氣及三氯矽烷,及一般包含約5%至約75%三氯矽烷。含矽烷進料氣體可包含約0.015莫耳三氯矽烷/莫耳氫氣至約0.3莫耳三氯矽烷/莫耳氫氣。或者,含矽烷進料氣體可包含約0.03莫耳三氯矽烷/莫耳氫氣至約0.15莫耳三氯矽烷/莫耳氫氣。亦如上所述,含矽烷進料氣體可視需要進一步包含四氯化矽。 The decane-containing feed gas is typically fed to the Siemens reaction via an inlet in the base Device. As noted above, the decane-containing feed gas comprises hydrogen and trichloromethane, and typically comprises from about 5% to about 75% trichlorodecane. The decane-containing feed gas may comprise from about 0.015 moles of trichloro decane/mole hydrogen to about 0.3 moles of trichloro decane/mole hydrogen. Alternatively, the decane-containing feed gas may comprise from about 0.03 moles of trichlorodecane/mole hydrogen to about 0.15 moles of trichlorodecane/mole hydrogen. As also noted above, the decane-containing feed gas may further comprise ruthenium tetrachloride as desired.
本發明方法進一步包括步驟:使三氯矽烷與氫氣在分解反應器中進行反應產生多晶矽。當該一或多個分解反應器為西門子反應器時,在上述溫度及壓力條件下,矽會自含矽烷進料氣體沈積在U型棒上,藉此增大U型棒之直徑。期望不受理論限制下,據信基於含矽烷進料氣體所包含之矽的總量計,自西門子反應器可獲得為約5%至約50%,或約20%至約50%之多晶矽產物量。 The process of the present invention further comprises the step of reacting trichloromethane with hydrogen in a decomposition reactor to produce polycrystalline hydrazine. When the one or more decomposition reactors are Siemens reactors, under the above temperature and pressure conditions, helium will be deposited on the U-shaped rod from the decane-containing feed gas, thereby increasing the diameter of the U-shaped rod. Without wishing to be bound by theory, it is believed that from about 5% to about 50%, or from about 20% to about 50%, of polycrystalline germanium product from the Siemens reactor based on the total amount of rhodium contained in the decane-containing feed gas. the amount.
該方法進一步包括步驟:將包含四氯化矽之氣態流自一或多個分解反應器排出。特定言之,四氯化矽係分解反應之產物,且因此會產生於一或多個分解反應器中。四氯化矽亦會存在經導入至一或多個分解反應器之含矽烷進料氣體中。可將自一或多個分解反應器排出之氣態流直接饋送至一或多個回收反應器以自四氯化矽回收矽,如圖1及2中之數字34所示,且可直接饋送至一或多個回收反應器而不實施中間處理步驟(在一或多個分解反應器與一或多個回收反應器之間不存在任何單元操作)。或者,自一或多個分解反應器排出之氣態流可經處理以移除某些物質,然後饋送至一或多個回收反應器中。例如,可藉由將所排出之氣態流饋送通過藉由諸如工業用水之流體冷卻的除塵設備來處理自一或多個分解反應器排出之氣態流,藉此移除細矽粉、二矽烷或其等組合。 The method further includes the step of discharging a gaseous stream comprising ruthenium tetrachloride from one or more decomposition reactors. In particular, ruthenium tetrachloride is the product of the decomposition reaction and is therefore produced in one or more decomposition reactors. Cerium tetrachloride may also be present in the decane-containing feed gas introduced into one or more decomposition reactors. The gaseous stream exiting one or more decomposition reactors can be fed directly to one or more recovery reactors to recover the ruthenium from the ruthenium tetrachloride, as shown by numeral 34 in Figures 1 and 2, and can be fed directly to One or more recovery reactors are not subjected to an intermediate treatment step (there is no unit operation between one or more decomposition reactors and one or more recovery reactors). Alternatively, the gaseous stream exiting one or more of the decomposition reactors can be treated to remove certain materials and then fed to one or more recovery reactors. For example, the fine gas powder, dioxane or may be removed by feeding the discharged gaseous stream through a dedusting device cooled by a fluid such as industrial water to treat the gaseous stream exiting the one or more decomposition reactors. Its combination.
使四氯化矽與元素金屬在一或多個回收反應器中反應以產生多晶矽及包含金屬氯化物之第一組合物。更具體言之,使所排出之氣態流中之四氯化矽與元素金屬反應以產生高純度矽。元素金屬可選自由 鋅、銅、鋁、鎂、鈉及其等組合組成之群。可如本技藝已知般藉由四氯化矽氣體與元素金屬氣體之氣相反應實施該反應。特定言之,可藉由使四氯化矽氣體與鋅氣體在具有約800至約1200℃或約900至約1000℃之溫度的回收反應器中反應,實施四氯化矽與元素金屬之反應,在該等條件下,四氯化矽氣體會輕易地與鋅氣體反應。在回收反應器內之壓力為,例如,約0至約1723kPa。如上所述,多晶矽係透過四氯化矽與元素金屬之反應而產生。該多晶矽一般呈高純度且被熟習本項技術者視為太陽能級矽。另一產生的是為反應副產物之包含金屬氯化物之第一組合物。當將鋅用作元素金屬時,副產物係如以下反應式所示之氯化鋅。 The ruthenium tetrachloride is reacted with the elemental metal in one or more recovery reactors to produce polycrystalline ruthenium and a first composition comprising the metal chloride. More specifically, the ruthenium tetrachloride in the discharged gaseous stream is reacted with elemental metals to produce high purity ruthenium. Elemental metal optional A group consisting of zinc, copper, aluminum, magnesium, sodium, and the like. The reaction can be carried out by gas phase reaction of a hafnium tetrachloride gas with an elemental metal gas as is known in the art. Specifically, the reaction of ruthenium tetrachloride with an elemental metal can be carried out by reacting a ruthenium tetrachloride gas with a zinc gas in a recovery reactor having a temperature of from about 800 to about 1200 ° C or from about 900 to about 1000 ° C. Under these conditions, the ruthenium tetrachloride gas easily reacts with the zinc gas. The pressure within the recovery reactor is, for example, from about 0 to about 1723 kPa. As described above, the polycrystalline ruthenium is produced by the reaction of ruthenium tetrachloride with an elemental metal. The polycrystalline germanium is generally of high purity and is considered a solar grade germanium by those skilled in the art. Another result is a first composition comprising a metal chloride which is a by-product of the reaction. When zinc is used as the elemental metal, the by-product is zinc chloride as shown in the following reaction formula.
SiCl4+2Zn→Si+2ZnCl2 SiCl 4 +2Zn→Si+2ZnCl 2
在產生多晶矽後,殘留在一或多個回收反應器中之第一組合物含有金屬氯化物及亦可含有元素金屬、四氯化矽及類似者。金屬氯化物可藉由將溫度降低至金屬氯化物之沸點或更低予以分離及以液體形式予以回收。元素金屬可以粉末或液體金屬形式回收且可再循環至一或多個回收反應器中。亦可將殘留之四氯化矽再循環至一或多個回收反應器中。 After the polycrystalline germanium is produced, the first composition remaining in one or more of the recovery reactors contains metal chlorides and may also contain elemental metals, antimony tetrachloride, and the like. The metal chloride can be separated and recovered in liquid form by lowering the temperature to the boiling point of the metal chloride or lower. The elemental metal may be recovered in the form of a powder or liquid metal and may be recycled to one or more recovery reactors. The residual ruthenium tetrachloride can also be recycled to one or more recovery reactors.
本發明方法進一步包括步驟:藉由以下方式中之至少一者自第一組合物中之金屬氯化物回收元素金屬,如圖1及2中之數字36及38所示:1)使包含金屬氯化物之第一組合物進行氫化,以產生元素金屬及氯化氫;或2)使第一組合物中之金屬氯化物與元素矽反應。 The method of the present invention further comprises the step of recovering the elemental metal from the metal chloride in the first composition by at least one of the following, as indicated by numerals 36 and 38 in Figures 1 and 2: 1) comprising metal chloride The first composition of the compound is hydrogenated to produce an elemental metal and hydrogen chloride; or 2) the metal chloride in the first composition is reacted with elemental hydrazine.
藉由氫化作用自第一組合物中之金屬氯化物回收元素金屬以產生元素金屬及氯化氫 Recovering elemental metals from metal chlorides in the first composition by hydrogenation to produce elemental metals and hydrogen chloride
根據本發明方法,及如圖2所示,將存於第一組合物中之金屬氯化物進行氫化,如以下反應式所示,當金屬氯化物為氯化鋅時,會產生氯化氫及鋅。 According to the process of the present invention, and as shown in Fig. 2, the metal chloride present in the first composition is hydrogenated. As shown in the following reaction formula, when the metal chloride is zinc chloride, hydrogen chloride and zinc are produced.
ZnCl2+H2→Zn+2HCl ZnCl 2 +H 2 →Zn+2HCl
一般係在約700至約1500℃、約800至約1400℃或約900至約1300℃之溫度下實施氯化鋅與氫氣之還原反應。該還原反應氫氣與氯化鋅莫耳比為約2:1至約200:1,或約5:1至約100:1。反應滯留時間一般為約0.01至約1秒,或約0.03至約0.1秒。氫化反應為可逆反應,及因此在完成反應後立即將溫度降低至元素金屬鋅之沸點或更低。在以上反應條件下,可藉由氫氣還原氯化鋅以獲得細鋅粉。 The reduction of zinc chloride with hydrogen is generally carried out at a temperature of from about 700 to about 1500 ° C, from about 800 to about 1400 ° C, or from about 900 to about 1300 ° C. The reduction reaction hydrogen to molar ratio of zinc chloride is from about 2:1 to about 200:1, or from about 5:1 to about 100:1. The reaction residence time is generally from about 0.01 to about 1 second, or from about 0.03 to about 0.1 second. The hydrogenation reaction is a reversible reaction, and thus the temperature is lowered to the boiling point or lower of the elemental metal zinc immediately after completion of the reaction. Under the above reaction conditions, zinc chloride can be reduced by hydrogen to obtain fine zinc powder.
如圖2及上式所示,該氫化反應會產生元素金屬(例如鋅)及HCl。可將元素金屬再循環至一或多個回收反應器中,同時可將HCl再循環至直接法用於產生包含三氯矽烷之含矽烷進料氣體中。就此而言,藉由本發明可儘可能增大多晶矽之產率及減少廢料流。 As shown in Figure 2 and the above formula, the hydrogenation reaction produces elemental metals such as zinc and HCl. The elemental metal can be recycled to one or more recovery reactors while HCl can be recycled to the direct process for producing a decane-containing feed gas comprising trichloromethane. In this regard, by the present invention, the yield of polycrystalline germanium can be increased as much as possible and the waste stream can be reduced.
藉由使第一組合物中之金屬氯化物與元素矽反應自第一組合物中之金屬氯化物回收元素金屬 Recovering elemental metal from the metal chloride in the first composition by reacting the metal chloride in the first composition with elemental hydrazine
根據本發明方法及如圖1所示,藉由將第一組合物中之金屬氯化物與元素矽反應而自第一組合物中之金屬氯化物回收元素金屬,該反應係平衡反應。特定言之,該平衡反應涉及金屬氯化物與元素矽(即,存在矽源中且可為反應利用之矽原子)反應以產生四氯化矽及元素金屬(即,自金屬氯化物之氯原子分離的金屬原子),可透過驅使平衡反應沿某一方向或另一方向進行來達成回收元素金屬之目的。元素矽可存在包含雜質及元素矽之相對不純矽源中,且可利用元素矽與金屬氯化物之反應將元素矽自元素矽源中之一些雜質有效分離,然後可進一步加工所獲得之四氯化矽以將四氯化矽自雜質分離。 According to the process of the invention and as shown in Figure 1, the elemental metal is recovered from the metal chloride in the first composition by reacting the metal chloride in the first composition with elemental hydrazine, which reacts in equilibrium. In particular, the equilibrium reaction involves the reaction of a metal chloride with an elemental ruthenium (ie, a ruthenium atom present in the ruthenium source and available for the reaction) to produce ruthenium tetrachloride and elemental metals (ie, chlorine atoms from the metal chloride) The separated metal atom can be used to drive the equilibrium reaction in one direction or the other to achieve the purpose of recovering the elemental metal. The element 矽 may exist in a relatively impure ruthenium containing impurities and element 矽, and the element 矽 may be effectively separated from some impurities in the element 矽 source by reaction of the element 矽 with the metal chloride, and then the obtained tetrachloride may be further processed. Plutonium is used to separate hafnium tetrachloride from impurities.
應瞭解本發明方法可應用於涉及金屬鹵化物(例如,金屬氯化物)與元素矽之反應的任何平衡反應以產生四鹵化矽(例如,四氯化矽)及元素金屬。例如,合適元素金屬可選自由鋅、銅、鋁、鎂、鈉及其等組合組成之群。在本發明之一具體實施例中,平衡反應涉及氯 化鋅與元素矽反應以產生四氯化矽及元素鋅。在本發明之另一具體實施例中,平衡反應涉及氯化銅與元素矽反應以產生四氯化矽及元素銅。在本發明方法之另一具體實施例中,平衡反應涉及氯化鋁與元素矽反應以產生四氯化矽及元素鋁。理所當然,上述反應中之各者均為平衡反應,因此反向反應與正向反應會達成至少某程度平衡,而在反應物側及產物側之所有化合物均稱為「反應物料」。 It will be appreciated that the process of the invention can be applied to any equilibrium reaction involving the reaction of a metal halide (e.g., a metal chloride) with an elemental cerium to produce a cerium tetrahalide (e.g., cerium tetrachloride) and an elemental metal. For example, a suitable elemental metal may be selected from the group consisting of zinc, copper, aluminum, magnesium, sodium, and the like. In a specific embodiment of the invention, the equilibrium reaction involves chlorine Zinc is reacted with elemental cerium to produce cerium tetrachloride and elemental zinc. In another embodiment of the invention, the equilibrium reaction involves the reaction of copper chloride with elemental cerium to produce cerium tetrachloride and elemental copper. In another embodiment of the process of the invention, the equilibrium reaction involves the reaction of aluminum chloride with elemental cerium to produce cerium tetrachloride and elemental aluminum. Of course, each of the above reactions is an equilibrium reaction, so the reverse reaction and the forward reaction will reach at least some degree of equilibrium, and all compounds on the reactant side and the product side are referred to as "reaction materials".
如圖3所示,在一般與大氣環境隔絕之設備10中,藉由使在第一組合物中之金屬氯化物與元素矽反應進行回收元素金屬之步驟。應瞭解,為了補料或移除反應物料的目的時,設備10可不密封,然而,在反應期間,設備10一般係經密封以防止污染物進入設備10、避免對反應產生毒害環境作用及控制平衡反應之熱動態。合適設備10描述在TW共同審理申請案_______中,該案主張在2012年7月2日申請之美國申請案61/667,134的優先權及標題為「APPARATUS FOR FACILITATING AN EQUILIBRIUM REACTION AND SELECTIVELY SEPARATING REACTIVE SPECIES」(檔案號:DC11194PSP1),同日申請,以引用其全文之形式併入本文。 As shown in Fig. 3, in the apparatus 10 generally isolated from the atmosphere, the step of recovering the elemental metal is carried out by reacting the metal chloride in the first composition with the elemental cerium. It will be appreciated that the apparatus 10 may be unsealed for the purpose of feeding or removing the reaction mass, however, during the reaction, the apparatus 10 is typically sealed to prevent contaminants from entering the apparatus 10, to avoid toxic environmental effects on the reaction, and to control balance. The thermal dynamics of the reaction. A suitable device 10 is described in the TW co-pending application _______, which claims the priority of the US application 61/667,134 filed on July 2, 2012, and entitled "APPARATUS FOR FACILITATING AN EQUILIBRIUM REACTION AND SELECTIVELY SEPARATING REACTIVE SPECIES" (Archive No. DC11194PSP1), filed on the same day, is incorporated herein by reference in its entirety.
一般而言,如圖3所示,設備10包括加熱區12、與加熱區12流體連通之頂置溫度調控區14及與頂置溫度調控區14流體連通之頂置冷卻區16。特定言之,「流體連通」意指來自一個區之液體及/或氣體可直接在區之間流動而無需解封設備10(但可在各個區之間佈置閥門、閘或其他中間結構或裝置以控制設備10內容物在區之間之流動)。各區之溫度相對於設備10之其他區係經獨立控制,以移動設備10之各個區中的平衡反應之熱動態平衡,藉此控制在各個區中之反應物料之物理狀態(例如,固態、液態及/或氣態)及基於在各個區中之環境條件下之物理狀態分離反應物料。透過基於物理狀態分離反應物料,可如下文更詳細描述般驅使平衡反應沿一個或另一個方向移動。雖然各區 之溫度係經獨立控制,然而應瞭解該等區不必彼此孤立且一個區之條件可影響其他區中之條件,條件係仍可在各區中執行下文更詳細描述之方法步驟。為予以說明,設備10可為具有容置在其中之整合區之反應器,如圖3所示之反應器,其中在一個區中之溫度可影響相鄰區中之條件。然而,應瞭解可藉由分離的反應器、容器或裝置表示各個區,同時以進料線連接該等區,此做法在本發明方法之工業規模化執行時提供優點。 In general, as shown in FIG. 3, apparatus 10 includes a heating zone 12, an overhead temperature regulating zone 14 in fluid communication with heating zone 12, and an overhead cooling zone 16 in fluid communication with overhead temperature regulating zone 14. In particular, "fluid communication" means that liquids and/or gases from one zone can flow directly between zones without the need to deblock the apparatus 10 (but valves, gates or other intermediate structures or devices can be placed between the zones) To control the flow of the contents of the device 10 between the zones). The temperature of each zone is independently controlled relative to other zones of equipment 10 to balance the thermal dynamics of the equilibrium reactions in the various zones of the mobile device 10, thereby controlling the physical state of the reactants in each zone (eg, solid state, The liquid and/or gaseous state and the separation of the reaction materials based on the physical state under ambient conditions in each zone. By separating the reaction mass based on the physical state, the equilibrium reaction can be driven to move in one or the other direction as described in more detail below. Although the districts The temperatures are independently controlled, however it should be understood that the zones need not be isolated from each other and that the conditions of one zone may affect the conditions in the other zones, and the process steps of the methods described in more detail below may still be performed in each zone. To illustrate, apparatus 10 can be a reactor having an integrated zone housed therein, such as the reactor shown in Figure 3, wherein the temperature in one zone can affect conditions in adjacent zones. However, it will be appreciated that the various zones may be represented by separate reactors, vessels or devices while joining the zones by feed lines, which provides advantages in the industrial scale implementation of the process of the invention.
根據本發明之一實施例,當將具有各個區之設備10用於實現本發明方法時,將包含金屬氯化物,例如,氯化鋅之第一組合物導入至設備10中。可將第一組合物以氣態形式導入至設備10之加熱區12中,目的係使金屬氯化物與在其中之元素矽反應。第一組合物係提供自一或多個回收反應器且可包含除金屬氯化物以外的組分。然而,應瞭解該第一組合物一般包含實質純化的,即至少約90%、至少約92.5%、至少約95%、至少約98%、至少約99%、至少約99.5%、至少約99.9%或至少約99.99重量%金屬氯化物。 In accordance with an embodiment of the present invention, a first composition comprising a metal chloride, such as zinc chloride, is introduced into apparatus 10 when apparatus 10 having various zones is used to carry out the process of the present invention. The first composition can be introduced into the heating zone 12 of the apparatus 10 in gaseous form for the purpose of reacting the metal chloride with the elemental enthalpy therein. The first composition is provided from one or more recovery reactors and may comprise components other than metal chlorides. However, it is to be understood that the first composition generally comprises substantially purified, i.e., at least about 90%, at least about 92.5%, at least about 95%, at least about 98%, at least about 99%, at least about 99.5%, at least about 99.9%. Or at least about 99.99% by weight metal chloride.
在某些實施例中,將運載(稀釋)氣體導入至反應器10之加熱區12中以自第一組合物提離一或多種組分。該氣體一般為惰性,但亦可與另一化合物反應。此等氣體之實例包括稀有氣體,例如氬氣,及/或加工氣體,如四氯化矽(STC)氣體、氫氣(H2)等。舉例而言,該氣體可通過(例如鼓吹)熔融/呈液態之第一組合物以移除非所需物料,如揮發物質。此製程在本技藝中可稱為第一組合物之汽提。 In certain embodiments, a carrier (dilution) gas is introduced into the heating zone 12 of the reactor 10 to lift one or more components from the first composition. The gas is generally inert but can also react with another compound. Examples of such gases include rare gases such as argon, and/or process gases such as ruthenium tetrachloride (STC) gas, hydrogen (H 2 ), and the like. For example, the gas can be passed (eg, by blowing) a first composition that is molten/liquid in order to remove undesirable materials, such as volatile materials. This process may be referred to in the art as stripping of the first composition.
如上文所提及,根據實施例,亦可將對金屬氯化物具反應性之元素矽源導入至設備10中。換言之,元素矽以對金屬氯化物呈反應性以形成四氯化矽之形式存在元素矽源中。為利用本發明在元素矽純化方面有關的優點及如上文所提及,可在相對不純之元素矽源中提供元 素矽,除元素矽以外,該等元素矽源包含雜質。使用相對不純元素矽源甚為有利,係因此等源較純化元素矽源要便宜得多。例如,相對不純元素矽源可在一些製程之廢料流中輕易地獲得,如此一來,可將本發明方法與產生含有元素矽源之廢料流之其他方法組合使用。 As mentioned above, according to an embodiment, an elemental cerium source reactive with metal chloride can also be introduced into the apparatus 10. In other words, the element 矽 is present in the elemental ruthenium in the form of being reactive with the metal chloride to form ruthenium tetrachloride. In order to utilize the advantages of the invention in the purification of elemental oxime and as mentioned above, the element may be provided in a relatively impure elemental source In addition to elemental germanium, the elemental source contains impurities. It is advantageous to use a relatively impure elemental source, which is therefore much cheaper than a purified element. For example, a relatively impure element source can be readily obtained in a waste stream of some processes, such that the process of the present invention can be used in combination with other methods of producing a waste stream containing elemental sources.
在一實施例中,元素矽源包含少於或等於約90.00重量%矽,此為根據本申請案之「相對不純」元素矽源之典型。然而,應瞭解本發明可使用不論純度之任何元素矽源。相對不純矽源之實例包括(但不限於)低級矽源,如冶金級矽;包含矽碎料之廢料流、直接法殘餘物及鍛製二氧化矽;及上述元素矽源之任何組合。 In one embodiment, the elemental germanium source contains less than or equal to about 90.00% by weight enthalpy, which is typical of the "relatively impure" elemental source of the present application. However, it should be understood that any source of germanium, regardless of purity, can be used with the present invention. Examples of relatively impure sources include, but are not limited to, low-grade helium sources, such as metallurgical grades; waste streams containing crushed materials, direct process residues, and forged ceria; and any combination of the above-described elemental sources.
正如包含金屬氯化物之第一組合物,一般係將元素矽源導入至設備10之加熱區12中。不同於第一組合物,一般係將元素矽源以固體形式導入至設備10中。就此而言,設備10之加熱區12一般包括佈置在其中之懸空托盤或蝶18以持留固體元素矽源。該懸空托盤或蝶18可藉由在加熱區12中之設備10之側壁20支撐,或在其他情況中可藉由設備10之其他特徵部而懸停在加熱區12中。為促進第一組合物與元素矽源之間之接觸,懸空托盤或蝶18一般具有貫穿自身之穿孔22,用於讓第一組合物向上流動通過懸空托盤或蝶18及接觸元素矽源。邏輯上,一般係將第一組合物導入在懸空托盤或蝶18下方之加熱區12中以促進第一組合物向元素矽源流動。 As with the first composition comprising a metal chloride, the elemental germanium source is typically introduced into the heating zone 12 of the apparatus 10. Unlike the first composition, the elemental lanthanum source is typically introduced into the apparatus 10 in solid form. In this regard, the heating zone 12 of the apparatus 10 generally includes a suspended tray or butterfly 18 disposed therein to retain a source of solid element germanium. The suspended tray or butterfly 18 can be supported by the side wall 20 of the device 10 in the heating zone 12 or, in other cases, can be hovered in the heating zone 12 by other features of the apparatus 10. To facilitate contact between the first composition and the elemental source, the suspended tray or butterfly 18 generally has perforations 22 therethrough for allowing the first composition to flow upward through the suspended tray or butterfly 18 and the contact element source. Logically, the first composition is typically introduced into the heating zone 12 below the suspended tray or butterfly 18 to facilitate the flow of the first composition to the elemental source.
來自第一組合物之金屬氯化物與來自元素矽源之元素矽在設備10中反應以產生包含四氯化矽、未反應金屬氯化物及視需要元素金屬之氣態流。反應會留下呈固體形式之雜質,該等雜質存在矽源中,藉此將矽自存在矽源中之雜質有效分離。 The metal chloride from the first composition reacts with the elemental cerium from the elemental cerium source in apparatus 10 to produce a gaseous stream comprising ruthenium tetrachloride, unreacted metal chloride, and optionally elemental metals. The reaction leaves impurities in solid form which are present in the source of the ruthenium, thereby effectively separating the ruthenium from the impurities present in the ruthenium source.
一般而言,金屬氯化物與元素矽之反應係發生在設備10之加熱區12中,且反應一般係依照氣相/固相反應進行,其中第一組合物呈氣態形式及元素矽源呈固態形式。更具體言之,在設備10之加熱區12 中反應期間,金屬氯化物一般呈氣態形式而元素矽一般呈固態形式。反應係在足以驅動反應之條件下實施,及就此而言,設備10之加熱區12內之溫度及壓力係經控制以驅動金屬氯化物與元素矽之反應。亦考量反應物料之物理狀態,目的係在加熱區12中建立環境條件,藉此控制加熱區12之溫度及壓力以避免矽源熔化及避免四氯化矽及未反應金屬氯化物凝結。 In general, the reaction of the metal chloride with the elemental ruthenium occurs in the heating zone 12 of the apparatus 10, and the reaction is generally carried out in accordance with a gas phase/solid phase reaction in which the first composition is in a gaseous form and the elemental lanthanum is in a solid state. form. More specifically, in the heating zone 12 of the device 10 During the middle reaction, the metal chloride is generally in a gaseous form and the elemental oxime is generally in a solid form. The reaction is carried out under conditions sufficient to drive the reaction, and in this regard, the temperature and pressure within the heating zone 12 of the apparatus 10 is controlled to drive the reaction of the metal chloride with the elemental ruthenium. The physical state of the reaction material is also contemplated in order to establish environmental conditions in the heating zone 12, thereby controlling the temperature and pressure of the heating zone 12 to avoid melting of the helium source and to avoid condensation of the antimony tetrachloride and unreacted metal chloride.
在一實施例中,元素金屬可具有高於加熱區12之環境條件(即溫度及壓力)之沸點,以使元素金屬在金屬氯化物與元素矽反應後可凝結在加熱區12中。就此而言,在加熱區12中之溫度及壓力係經控制以促進在加熱區12內之元素金屬凝結(藉此避免元素金屬由於在金屬氯化物與元素矽反應時發生元素金屬凝結而僅成為金屬氯化物與元素矽之反應所產生之氣態流的視需要組分)。或者,元素金屬可具有低於加熱區12之環境條件之沸點,以使藉由金屬氯化物與元素半導體之反應產生之氣態流包含元素金屬。加熱區12中之溫度及壓力條件一般係經最佳化,以達到矽相對四氯化矽之間最大轉化。 In one embodiment, the elemental metal may have a boiling point above ambient conditions (i.e., temperature and pressure) of the heating zone 12 such that the elemental metal may condense in the heating zone 12 after the metal chloride reacts with the elemental cerium. In this regard, the temperature and pressure in the heating zone 12 are controlled to promote the condensation of elemental metal within the heating zone 12 ( thereby preventing the elemental metal from becoming only due to the condensation of elemental metals during the reaction of the metal chloride with the elemental cerium). An optional component of the gaseous stream produced by the reaction of the metal chloride with the elemental ruthenium). Alternatively, the elemental metal may have a boiling point lower than the environmental conditions of the heating zone 12 such that the gaseous stream produced by the reaction of the metal chloride with the elemental semiconductor comprises elemental metal. The temperature and pressure conditions in the heating zone 12 are generally optimized to achieve maximum conversion between ruthenium and ruthenium tetrachloride.
如上文所提及,在金屬氯化物與元素矽反應後,元素金屬可以液態形式凝結在加熱區12中。就此實施例而言,當加熱區12中之環境條件低於元素金屬之沸點時,可在加熱區12中提供收集器(未顯示)以收集自元素矽源分離之凝結元素金屬。例如,當懸空托盤或蝶18存在加熱區12中且具有穿孔22時,可將收集器佈置在懸空托盤或蝶18下方及可收集向下流動通過穿孔22之液態元素金屬。應瞭解在一些情況下,加熱區12內之特徵部可具有較加熱區12內環境高的溫度,以使甚至在足以使元素金屬凝結之環境條件下,加熱區12內之特徵部可具有不容許元素金屬在其上凝結之較高溫度。在平行反應進行期間或之後,可於加熱區12中凝結及收集元素金屬,並將收集器中之元素金屬運輸出裝置10。如圖1中所示,可將元素金屬(在此等圖中顯示為 鋅)再循環至一或多個回收反應器中,藉此在一或多個回收反應器與用於自金屬氯化物回收元素金屬之設備之間形成閉路製程。或者,可將元素金屬用於設備10內以進一步與四氯化矽反應,如下文更詳細描述。 As mentioned above, after the metal chloride is reacted with the elemental cerium, the elemental metal may condense in the heating zone 12 in a liquid form. For this embodiment, when the ambient conditions in the heating zone 12 are below the boiling point of the elemental metal, a collector (not shown) may be provided in the heating zone 12 to collect the condensed elemental metal separated from the elemental cerium source. For example, when a suspended tray or butterfly 18 is present in the heating zone 12 and has perforations 22, the collector can be placed under the suspended tray or butterfly 18 and the liquid elemental metal flowing down through the perforations 22 can be collected. It will be appreciated that in some cases, the features within the heating zone 12 may have a higher temperature than the environment within the heating zone 12 such that features may not be present in the heating zone 12 even under ambient conditions sufficient to cause the elemental metal to condense. The higher temperature at which the elemental metal is allowed to condense. During or after the parallel reaction, elemental metal may be condensed and collected in the heating zone 12 and the elemental metal in the collector may be transported out of the apparatus 10. As shown in Figure 1, elemental metals can be shown (shown in these figures as The zinc) is recycled to one or more recovery reactors whereby a closed circuit process is formed between one or more recovery reactors and equipment for recovering elemental metals from the metal chloride. Alternatively, elemental metals can be used in apparatus 10 to further react with ruthenium tetrachloride, as described in more detail below.
在將元素金屬以液態形式凝結在加熱區12中之一具體實施例中,金屬氯化物為氯化鋅而元素金屬為鋅。在此實施例中,一般係使矽與氯化鋅在加熱區12中於約756至約910℃之溫度下反應,該條件足以使鋅以液態形式凝結在加熱區12中,同時維持加熱區12中之溫度高於氯化鋅之沸點。 In one embodiment in which the elemental metal is condensed in a liquid form in the heating zone 12, the metal chloride is zinc chloride and the elemental metal is zinc. In this embodiment, the ruthenium is typically reacted with zinc chloride in the heating zone 12 at a temperature of from about 756 to about 910 ° C, which is sufficient to cause the zinc to condense in the liquid zone in the heated zone 12 while maintaining the heated zone. The temperature in 12 is higher than the boiling point of zinc chloride.
除非另外說明,否則本文所提及之所有溫度為指定區之內部溫度(而非設備10之壁、加熱元件或其他特徵部之溫度)。例如,可將佈置在加熱區12周圍之夾套設定在約1000℃之溫度,此將賦予加熱區12約756至約910℃之溫度。預期在加熱元件與加熱區12之間損失至少一些熱量。此邏輯適用於反應器之其他區,例如冷卻區16,其中冷卻部件之溫度較冷卻區16本身低。應瞭解一些鋅仍可在此等條件下存在於氣態流中,而一些鋅則會凝結在加熱區12中。亦應瞭解,存在加熱區12內之特徵部會過熱而不會讓元素鋅凝結在其上,如此一來,元素鋅便可保留在氣態流中。 Unless otherwise stated, all temperatures referred to herein are the internal temperatures of the designated zone (rather than the temperature of the walls, heating elements or other features of the device 10). For example, the jacket disposed about the heating zone 12 can be set to a temperature of about 1000 °C, which will impart a temperature of about 756 to about 910 °C to the heating zone 12. It is expected that at least some of the heat is lost between the heating element and the heating zone 12. This logic applies to other zones of the reactor, such as the cooling zone 16, where the temperature of the cooling components is lower than the cooling zone 16 itself. It will be appreciated that some zinc may still be present in the gaseous stream under these conditions, while some zinc will condense in the heating zone 12. It should also be understood that the features in the heated zone 12 will overheat without causing the elemental zinc to condense thereon, so that the elemental zinc can remain in the gaseous stream.
自元素矽與金屬氯化物之反應產生之氣態流凝結任何未反應金屬氯化物及元素金屬(當存在時),其中未反應金屬氯化物及任何元素金屬凝結後,四氯化矽保留在氣態流中。更具體言之,當金屬氯化物與元素矽在足以將元素金屬保持在氣態流中之環境條件下反應時,在氣態流中之元素金屬及未反應金屬氯化物均自氣態流凝結,同時保持四氯化矽呈氣態形式。或者,當金屬氯化物與元素矽在不足以將元素金屬保持在氣態流中之環境條件下反應時,僅有未反應金屬氯化物會自氣態流凝結。最終,目的係透過使大部分反應物料自氣態流凝結並 The gaseous stream produced by the reaction of elemental ruthenium with a metal chloride condenses any unreacted metal chloride and elemental metal (when present), wherein the unreacted metal chloride and any elemental metal condense, the ruthenium tetrachloride remains in the gaseous stream in. More specifically, when the metal chloride and the elemental ruthenium are reacted under ambient conditions sufficient to maintain the elemental metal in a gaseous stream, both the elemental and unreacted metal chlorides in the gaseous stream condense from the gaseous stream while maintaining Antimony tetrachloride is in a gaseous form. Alternatively, when the metal chloride and the elemental ruthenium are reacted under ambient conditions insufficient to maintain the elemental metal in the gaseous stream, only the unreacted metal chloride will condense from the gaseous stream. Ultimately, the goal is to condense most of the reaction materials from the gaseous stream and
將四氯化矽保持在氣態流中,以便將四氯化矽自其他反應物料分離。理論上可藉由將某些反應物料自圖3所示之系統移除來影響各反應物料之產率及平衡反應之動態。 The ruthenium tetrachloride is maintained in a gaseous stream to separate the ruthenium tetrachloride from the other reaction materials. It is theoretically possible to influence the yield of each reaction mass and the dynamics of the equilibrium reaction by removing certain reaction materials from the system shown in FIG.
有鑑於未反應金屬氯化物在金屬氯化物與元素矽反應之所需環境條件下不會凝結,在包括各種區之設備10中,可在金屬氯化物與元素矽反應隔開之區中進行未反應金屬氯化物及元素金屬(當存在時)之凝結。更具體言之,可將包含未反應金屬氯化物及視需要元素金屬之氣態流饋送至頂置溫度調控區14中,及可在與加熱區12流體連通之頂置溫度調控區14中凝結存在氣態流中之未反應金屬氯化物及任何元素金屬。由於在頂置溫度調控區14中之環境條件係相對加熱區12係經獨立控制,故可建立在頂置溫度調控區14中之環境條件以選擇性凝結未反應金屬氯化物及元素金屬(當存在時),同時將四氯化矽保持在氣態流中。由於元素金屬及金屬氯化物一般具有不同的熔點,故可視操作頂置溫度調控區14之環境條件而進一步分離元素金屬及金屬氯化物。例如,可使元素金屬固化同時將金屬氯化物凝結成液態形式(該液體較元素金屬不黏稠)。可使凝結金屬氯化物自頂置溫度調控區14返回至加熱區12以參與在其中與元素矽進行之反應,藉此有效回收未反應金屬氯化物及增強金屬氯化物相對元素金屬之間的轉化效率。理論上可藉由上述機制回收未反應金屬氯化物,直至氣態流不含未反應金屬氯化物。就此而言,平衡反應一般係在過量矽下進行,以使此循環重複發生直至耗盡金屬氯化物。 In view of the fact that the unreacted metal chloride does not condense under the desired environmental conditions in which the metal chloride reacts with the elemental ruthenium, in the apparatus 10 including various zones, it is possible to carry out the zone in which the metal chloride is separated from the elemental ruthenium. Condensation of reactive metal chlorides and elemental metals (when present). More specifically, a gaseous stream comprising unreacted metal chloride and optionally elemental metal may be fed to the overhead temperature control zone 14 and may be condensed in the overhead temperature control zone 14 in fluid communication with the heating zone 12. Unreacted metal chloride and any elemental metal in the gaseous stream. Since the environmental conditions in the overhead temperature control zone 14 are independently controlled relative to the heating zone 12, environmental conditions in the overhead temperature control zone 14 can be established to selectively condense unreacted metal chlorides and elemental metals (when When present, the ruthenium tetrachloride is simultaneously maintained in the gaseous stream. Since elemental metals and metal chlorides generally have different melting points, elemental metals and metal chlorides can be further separated by operating the environmental conditions of the overhead temperature control zone 14. For example, the elemental metal can be solidified while the metal chloride is condensed into a liquid form (the liquid is not viscous compared to the elemental metal). The condensed metal chloride can be returned from the overhead temperature control zone 14 to the heating zone 12 to participate in the reaction with the element yttrium therein, thereby effectively recovering the unreacted metal chloride and enhancing the conversion between the metal chloride and the elemental metal. effectiveness. Theoretically, the unreacted metal chloride can be recovered by the above mechanism until the gaseous stream contains no unreacted metal chloride. In this regard, the equilibrium reaction is generally carried out under excess helium so that this cycle is repeated until the metal chloride is consumed.
在一具體實施例中,金屬氯化物為氯化鋅而元素金屬為鋅。可使矽與氯化鋅在加熱區12中,在至少約910℃之溫度、大氣壓下反應,在該等條件下鋅會存在氣態流中。鋅以液態或固態形式凝結在頂置溫度調控區14中。為使鋅在大氣壓下凝結,頂置溫度調控區14中之溫度應小於約910℃。雖然應瞭解鋅及未反應氯化鋅可自氣態流凝結 在不同區中,但未反應氯化鋅亦可與鋅一起凝結在頂置溫度調控區14中。在此等情況下,未反應氯化鋅及鋅可在約275至至大約756℃之溫度、大氣壓下在頂置溫度調控區14中自氣態流凝結,此等條件低於氯化鋅之沸點並支持其凝結。或者,未反應氯化鋅及鋅可在約275至至高約420℃之溫度、大氣壓下自氣態流凝結,在此等條件下,鋅為固態及氯化鋅為液態,進而可較輕易分離氯化鋅及鋅。或者,未反應氯化鋅及鋅可在約420至至高約756℃之溫度、大氣壓下自氣態流凝結。 In a specific embodiment, the metal chloride is zinc chloride and the elemental metal is zinc. The ruthenium and zinc chloride can be reacted in the heating zone 12 at a temperature of at least about 910 ° C under atmospheric pressure, under which conditions the zinc will be present in the gaseous stream. Zinc is condensed in the liquid or solid form in the overhead temperature control zone 14. In order for the zinc to condense at atmospheric pressure, the temperature in the overhead temperature control zone 14 should be less than about 910 °C. Although it should be understood that zinc and unreacted zinc chloride can be condensed from the gaseous stream. In the different zones, unreacted zinc chloride may also condense with the zinc in the overhead temperature control zone 14. In such cases, unreacted zinc chloride and zinc may condense from the gaseous stream in the overhead temperature control zone 14 at a temperature of from about 275 to about 756 ° C at atmospheric pressure, such conditions being lower than the boiling point of zinc chloride. And support its condensation. Alternatively, unreacted zinc chloride and zinc may be condensed from a gaseous stream at a temperature of from about 275 to about 420 ° C at atmospheric pressure. Under these conditions, zinc is solid and zinc chloride is liquid, which allows for easier separation of chlorine. Zinc and zinc. Alternatively, unreacted zinc chloride and zinc may condense from the gaseous stream at a temperature of from about 420 to about 756 ° C at atmospheric pressure.
就驅動平衡反應向產生四氯化矽及元素金屬移動之目的而言,在使金屬氯化物及元素金屬(當存在時)自氣態流凝結後,將至少一部分包含四氯化矽之氣態流自凝結金屬氯化物及元素金屬單離。透過在上述凝結步驟後單離至少一部分包含四氯化矽之氣態流,可有效地將至少一部分四氯化矽自平衡反應移除,進而驅動平衡反應向產生四氯化矽及元素金屬移動。最終,此單離可使平衡反應移動至高得多的產率,如至少約90莫耳%轉化及甚至達100莫耳%轉化。 For the purpose of driving the equilibrium reaction to produce ruthenium tetrachloride and elemental metal, at least a portion of the gaseous phase comprising ruthenium tetrachloride is allowed to flow after the metal chloride and the elemental metal (when present) are condensed from the gaseous stream. Condensed metal chloride and elemental metal are separated. By separating at least a portion of the gaseous stream comprising ruthenium tetrachloride after the coagulation step, at least a portion of the ruthenium tetrachloride self-equilibrium reaction can be effectively removed, thereby driving the equilibrium reaction to produce ruthenium tetrachloride and elemental metal movement. Ultimately, this singulation can shift the equilibrium reaction to much higher yields, such as at least about 90 mole percent conversion and even up to 100 mole percent conversion.
為在使金屬氯化物及元素金屬(當存在時)自氣態流凝結後,將至少一部分包含四氯化矽之氣態流自凝結金屬氯化物及元素金屬單離,可將凝結後保留在頂置溫度調控區14中之氣態流饋送至頂置冷卻區16,使至少一部分氣態流在頂置冷卻區16中凝結。更具體言之,頂置冷卻區16中之條件可使四氯化矽在其中凝結,同時頂置溫度調控區14中之條件保持四氯化矽呈氣態形式。在設備10中存在擋板以將頂置冷卻區16中之凝結物自頂置溫度調控區14分離或單離。如圖3圖示,頂置冷卻區16可經組態以防止凝結四氯化矽回流至頂置溫度調控區14中,其中擋板係藉由頂置冷卻區16在設備10中相對於頂置溫度調控區14延伸的角度建立。然而,應瞭解亦可將閥門或其他特徵部(未顯示)用作擋板以防止此種流動。在任何情況中,頂置冷卻區16係為防止在其中產生之凝結物與存在反應器之其他區中之其他凝結物、氣態 流或其他反應物料混合,藉此有效地將頂置冷卻區16中所產生之凝結物自存在設備10之其他區中之反應物料單離。可將在頂置冷卻區16中所產生之凝結物收集在收集室24中,如圖3所示,及再循環至用於數字34所指示之步驟中之回收反應器。就此而言,單離至少一部分包含四氯化矽之氣態流之步驟可包括自設備10抽出至少一部分氣態流用於另一製程或丟棄。 In order to condense the metal chloride and the elemental metal (when present) from the gaseous stream, at least a portion of the gaseous stream comprising ruthenium tetrachloride is separated from the condensed metal chloride and the elemental metal, and may remain in the overhead after coagulation. The gaseous stream in the temperature regulation zone 14 is fed to the overhead cooling zone 16 such that at least a portion of the gaseous stream condenses in the overhead cooling zone 16. More specifically, the conditions in the overhead cooling zone 16 allow the ruthenium tetrachloride to condense therein while preserving the conditions in the temperature control zone 14 to maintain the ruthenium tetrachloride in a gaseous form. A baffle is present in the apparatus 10 to separate or separate the condensate in the overhead cooling zone 16 from the overhead temperature regulating zone 14. As illustrated in FIG. 3, the overhead cooling zone 16 can be configured to prevent condensation of ruthenium tetrachloride from flowing back into the overhead temperature regulation zone 14, wherein the baffles are in the device 10 relative to the top by the overhead cooling zone 16. The angle at which the temperature regulation zone 14 extends is established. However, it should be understood that valves or other features (not shown) may also be used as baffles to prevent such flow. In any case, the overhead cooling zone 16 is designed to prevent condensate generated therein from other condensate, gaseous state in other zones where the reactor is present. The stream or other reactive materials are mixed whereby the condensate produced in the overhead cooling zone 16 is effectively separated from the reactants in other zones of the apparatus 10. The condensate produced in the overhead cooling zone 16 can be collected in the collection chamber 24, as shown in Figure 3, and recycled to the recovery reactor for use in the steps indicated by numeral 34. In this regard, the step of separating at least a portion of the gaseous stream comprising hafnium tetrachloride may include withdrawing at least a portion of the gaseous stream from the apparatus 10 for another process or disposal.
如上文所提及,除將至少一部分包含四氯化矽之氣態流自凝結金屬氯化物及元素金屬單離外,可使四氯化矽與來自金屬氯化物與元素矽之反應之元素金屬反應,以在和元素矽與金屬氯化物反應分開的位置形成高純度元素矽。例如,如上所述,可將元素金屬及四氯化矽再循環至用於數字34所示之步驟中之一或多個回收反應器中。可再循環至該一或多個回收反應器中之四氯化矽係為所單離之四氯化矽。如本文所提及,「高純度」元素矽一般係指具有大於約90.00重量%或至少約99.00重量%之純度之矽組合物,藉此將「高純度」元素矽自一般包含在加熱區12中用於與金屬氯化物反應之矽區分。 As mentioned above, in addition to separating at least a portion of the gaseous stream comprising ruthenium tetrachloride from the condensed metal chloride and the elemental metal, the ruthenium tetrachloride can be reacted with the elemental metal from the reaction of the metal chloride with the elemental ruthenium. A high-purity element lanthanum is formed at a position separate from the reaction of the element lanthanum with the metal chloride. For example, as described above, the elemental metal and ruthenium tetrachloride can be recycled to one or more of the recovery reactors used in the steps indicated by numeral 34. The ruthenium tetrachloride which can be recycled to the one or more recovery reactors is the ruthenium tetrachloride which is isolated. As referred to herein, "high purity" element cerium generally refers to a cerium composition having a purity greater than about 90.00% by weight or at least about 99.00% by weight, whereby the "high purity" element is typically included in the heating zone 12 Used to distinguish between the reaction with metal chlorides.
依照以上教義,本發明可存在許多修改方案及變化方案,且本發明可依照不同於附加申請專利範圍所具體描述的方式實施。應理解附加申請專利範圍不限於詳細敘述中所描述之表達及特定化合物、組合物及方法,該等內容可因應屬於附加申請專利範圍內之特定實施例而加以變化。本文明確涵蓋獨立及附屬(包括單及多附屬)技術方案之所有組合的主題。就本文描述各實施例之特定特徵或態樣所依賴之任何馬庫西群組(Markush group)而言,應瞭解可自相對所有其他馬庫西群組成員獨立之各馬庫西群組成員獲得不同、特殊及/或非預期結果。馬庫西群組之各成員可個別依存及/或組合並適當支持關於在附加申請專利範圍內之具體實施例。 In view of the above teachings, many modifications and variations of the present invention are possible, and the invention can be practiced in a manner that is specifically described in the scope of the appended claims. It is to be understood that the scope of the appended claims is not limited to the particular embodiments of the inventions and This document clearly covers the subject matter of all combinations of independent and affiliated (including single and multiple affiliated) technical solutions. For any Markush group on which the specific features or aspects of the various embodiments described herein are dependent, it should be understood that each of the members of the Markus group who are independent of all other members of the Markusi group Get different, special and/or unexpected results. Each member of the Markusi group may individually and/or combine and suitably support specific embodiments within the scope of the appended claims.
亦應理解,本發明描述之各實施例時所依賴之任何範圍及子範 圍係獨立的且合併地屬於附加的申請專利範圍的範圍內,且應理解為描述且涵蓋所有範圍,包括其中的整數及/或分數值,即使在本文中未明確寫出此等數值。熟習本項技術者可輕易地知曉所列舉之範圍及子範圍充分描述且支持本發明之各實施例,且此等範圍及子範圍可進一步記述為相關二分之一、三分之一、四分之一、五分之一及類似者。正如一實例,範圍「0.1至0.9」可進一步記述為前段的三分之一(即,0.1至0.3)、中段的三分之一(即0.4至0.6),及後段的三分之一(即,0.7至0.9),此等是個別的且合併地屬於附加申請專利範圍的範圍內,且可個別地及/或合併依存及適當支持關於附加申請專利範圍的範圍內之具體實施例。此外,就界定或修改範圍之用語(如「至少」、「大於」、「小於」、「不大於」及類似者)而言,應理解此等用語包括子範圍及/或上限或下限。舉另一實例言之,範圍「至少10」本質上包括子範圍至少10至35、子範圍至少10至25、子範圍25至35及類似者,且各子範圍可各別地及/或合併地依存及適當支持關於在附加申請專利範圍的範圍內之指定實施例。最後,在所揭示範圍內之個別數字可依存及適當支持關於在附加專利申請範圍的範圍內之指定實施例。例如,範圍「1至9」包括各個個別整數(諸如3),以及包含小數點之個別數字(或分數)(諸如4.1),該等數字可依存及適當支持關於在附加申請專利範圍的範圍內之指定實施例。 It should also be understood that any scope and sub-dependency upon which the various embodiments of the present invention are relied upon The accompanying claims are intended to be inclusive and in the scope of the appended claims. Those skilled in the art can readily appreciate that the scope and sub-ranges recited are sufficient to describe and support the various embodiments of the present invention, and such ranges and sub-ranges can be further described as related one-half, one-third, four One, one fifth, and the like. As an example, the range "0.1 to 0.9" can be further described as one third of the previous paragraph (ie 0.1 to 0.3), one third of the middle section (ie 0.4 to 0.6), and one third of the latter paragraph (ie , and the specific embodiments within the scope of the appended claims are individually and/or combined and appropriately supported. In addition, terms used to define or modify the scope (such as "at least", "greater than", "less than", "not greater than" and the like are understood to include sub-ranges and/or upper or lower limits. As another example, the range "at least 10" essentially includes sub-ranges of at least 10 to 35, sub-ranges of at least 10 to 25, sub-ranges of 25 to 35, and the like, and each sub-range may be separately and/or combined. The specified embodiments are within the scope of the appended claims. Finally, individual numbers within the scope of the disclosure can be relied upon and appropriately supported with respect to the specified embodiments within the scope of the appended claims. For example, the range "1 to 9" includes each individual integer (such as 3), and an individual number (or fraction) including a decimal point (such as 4.1), which may depend on and appropriately support the scope of the additional patent application. Designated embodiments.
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