TW201328445A - Embedded interposer carrier structure and fabricating method thereof, and flip chip structure and fabricating method thereof - Google Patents

Abstract

An embedded interposer carrier structure includes an interposer, a polymer layer, at least a built-up film and at least a connector. The polymer layer covers the interposer. The built-up film is disposed on the polymer layer. The connector penetrates through the built-up film and is electrically connected to the interposer.

Description

Interposer embedded substrate structure and manufacturing method thereof, flip chip structure and manufacturing method thereof

The present invention relates to a package member, and more particularly to an interposer buried substrate structure.

In recent years, with the rapid development of electronic technology, the high-tech electronics industry has come out one after another, making more humanized and better-functioning electronic products constantly innovating and designing towards light, thin, short and small trends. Currently, in a semiconductor packaging process, a circuit substrate is one of the commonly used component components, wherein the circuit substrate is mainly composed of a plurality of patterned circuit layers and a patterned dielectric layer. Alternately stacked, the circuit substrate has become the mainstream of the chip scale package (CSP) and the flip chip package because of the advantages of fine wiring, compact assembly, and good performance.

In the development of active components using wafer size packaging or flip chip technology, and even further reducing the volume occupied by all components by 3D stacking technology, in order to solve the problems that may occur in the structure today or in the future, further use of the intermediary The concept of embedded substrate structure in the layer can meet the integration requirements of area reduction, and the electrical considerations can be further improved.

However, when the build-up process, the assembly process, or the mold-sealing process is performed, the position of the inter-layer is often caused to move, and the alignment accuracy of subsequent processes is deteriorated, so that it cannot be applied to products having high-density connection requirements.

It is an object of the present invention to provide an interposer embedded substrate structure that effectively positions the interposer.

Another object of the present invention is to provide a method of fabricating an interposer embedded substrate structure that avoids offset of the interposer.

Another object of the present invention is to provide a flip chip structure that has better reliability.

Another object of the present invention is to provide a method of fabricating a flip chip structure that improves alignment accuracy during assembly.

The invention provides an interposer embedded substrate structure, comprising an interposer, a polymer layer, at least one buildup film and at least one contact. The polymer layer covers the interposer. The buildup film is disposed on the polymer layer. The joint passes through the buildup film and is electrically connected to the interposer.

According to an embodiment of the present invention, in the buried substrate structure, the interposer includes a substrate and at least one through hole. The through hole is disposed in the substrate.

According to an embodiment of the present invention, in the buried substrate structure, the interposer further includes a redistribution layer disposed on the surface of the substrate and electrically connected to the through via.

According to an embodiment of the present invention, in the buried substrate structure of the interposer, the material of the polymer layer is, for example, a polymer photosensitive material.

According to an embodiment of the present invention, in the interposer substrate structure, the polymer photosensitive material is, for example, polyimide (PI), benzocyclobutene (BCB), SU-8. (epoxy resin), silicone or polybenzoxazole (PBO).

According to an embodiment of the present invention, in the buried substrate structure, the material of the build-up film is, for example, ABF (Ajinomoto build-up film), resin coated copper (RCC), and poly Propylene (PP) or resin (resin).

According to an embodiment of the present invention, in the buried substrate structure, the carrier layer further includes a carrier, the interposer is attached to the carrier, and the polymer layer covers the carrier.

According to an embodiment of the present invention, the buried substrate structure further includes a solder pad disposed in the polymer layer and electrically connected to the interposer and the contact.

According to an embodiment of the present invention, in the buried substrate structure, the seed layer further includes a seed layer disposed between the buildup film and the contact.

According to an embodiment of the present invention, in the buried substrate structure of the interposer, a solder ball is further disposed on the contact.

The invention provides a method for manufacturing an interposer embedded substrate structure, comprising the following steps. First, the interposer is attached to the carrier. Next, a polymer layer covering the interposer and the carrier is formed. Then, at least one buildup film is formed on the polymer layer. Next, at least one contact is formed through the buildup film, and the contact is electrically connected to the interposer.

According to an embodiment of the present invention, in the method of fabricating the interposer substrate structure, the method of forming the polymer layer is, for example, slot die coating or screen printing. ).

According to an embodiment of the present invention, in the method of fabricating the interposer substrate structure, the following steps are further included before the formation of the buildup film. First, at least one first opening is formed in the polymer layer, and the first opening exposes the interposer. Next, a solder pad is formed in the first opening, and the solder pad is electrically connected to the interposer.

According to an embodiment of the present invention, in the method of fabricating the interposer substrate structure, the method of forming the first opening is, for example, a laser direct image (LDI).

According to an embodiment of the present invention, in the method of fabricating the interposer substrate structure, the method of forming the buildup film is, for example, lamination.

According to an embodiment of the present invention, in the method of fabricating a buried substrate structure, the method of forming a contact through the build-up film includes the following steps. First, an opening is formed through the buildup film. Next, a seed layer is formed on the buildup film. Then, a dry film is formed on the seed layer, and the dry film exposes a portion of the seed layer. Next, a contact is formed on the seed layer exposed by the dry film, and the contact fills the opening.

According to an embodiment of the present invention, in the method of manufacturing a buried substrate structure, the method of forming the opening is, for example, laser drilling.

According to an embodiment of the present invention, in the method of fabricating the interposer substrate structure, the method of forming the seed layer is, for example, electroless plating.

According to an embodiment of the present invention, in the method of fabricating the interposer substrate structure, the method of forming the contacts is, for example, electroplating.

According to an embodiment of the present invention, in the method for fabricating a buried substrate structure in the interposer, a solder ball is further formed on the contact.

The present invention provides a flip chip structure comprising the above-described interposer buried substrate structure and a wafer. The wafer is bonded to the interposer in the interposer to embed the interposer in the substrate structure.

The present invention provides a method of fabricating a flip chip structure comprising the following steps. First, the interposer substrate structure described above is provided. Next, the wafer is bonded to the interposer in the interposer buried substrate structure.

Based on the above, in the interposer substrate structure proposed by the present invention, since the polymer layer covers the interposer, the position of the interposer can be fixed by the polymer layer. In addition, in the manufacturing method of the interposer substrate structure in the present invention, since the interposer is fixed by the polymer layer, the interposer can be prevented from being generated in a pressurization process such as a subsequent build-up process, an assembly process, or a molding process. Offset, so it has better alignment accuracy in subsequent processes.

On the other hand, in the flip chip structure and the manufacturing method thereof according to the present invention, since the interposer is embedded in the substrate structure, it has better alignment accuracy and reliability.

The above and other objects and features of the present invention will become more apparent from the description of the appended claims.

1A to FIG. 1N are cross-sectional views showing a manufacturing process of an interposer substrate structure in accordance with an embodiment of the present invention. FIG. 10 is a schematic diagram of a flip chip assembly according to an embodiment of the present invention.

First, referring to FIG. 1A, the interposer 102 is attached to the carrier 100. The interposer 102 is attached to the carrier 100 by, for example, an adhesive such as a die attach film (DAF). The material of the carrier 100 includes glass, FR4 (glass fiber cloth) or copper foil (Cu foil) or the like.

The interposer 102 includes a substrate 104 and at least one through via 106. The through hole 106 is disposed in the substrate 104. The material of the substrate 104 is, for example, tantalum or glass. The material of the through hole 106 is, for example, copper (Cu) or nickel (Ni). In addition, the interposer layer 102 may further include a redistribution layer 108 disposed on the surface of the substrate 104 facing the carrier 100 and electrically connected to the through via 106. The redistribution layer 108 includes a dielectric layer 110 and a metal line 112. The metal line 112 is disposed in the dielectric layer 110 and electrically connected to the through hole 106. The material of the dielectric layer 110 is, for example, a polymer photosensitive material or cerium oxide (SiO ₂ ). The material of the metal line 112 is, for example, copper or aluminum (Al) or the like.

Next, a polymer layer 114 covering the interposer 102 and the carrier 100 is formed. The material of the polymer layer 114 is, for example, a polymer photosensitive material, and the polymer photosensitive material is, for example, polyimide (PI), benzocyclobutene (BCB), SU-8 (epoxy resin), Silicone or polybenzoxazole (PBO) and the like. The method of forming the polymer layer 114 is, for example, a slit coating method or a screen printing method.

Then, referring to FIG. 1B, at least one opening 116 may be selectively formed in the polymer layer 114, and the opening 116 exposes the interposer 102 and the through hole 106. The method of forming the opening 116 is, for example, a laser direct imaging method or the like.

Next, referring to FIG. 1C , a pad 118 may be selectively formed in the opening 116 , and the pad 118 is electrically connected to the through hole 106 of the interposer 102 . The material of the pad 118 is, for example, copper, nickel, nickel/gold (Ni/Au), nickel/palladium/gold (Ni/Pd/Au) or gold. The formation method of the pad 118 is formed, for example, by performing a deposition process, a patterning process, or the like.

Thereafter, referring to FIG. 1D, a buildup film 120 is formed on the polymer layer 114. The material of the buildup film 120 is, for example, ABF, resin coated copper (RCC), polypropylene (PP), or resin. The method of forming the buildup film 120 is, for example, a press method or the like.

Furthermore, referring to FIG. 1E, an opening 122 is formed through the buildup film 120 to expose the pad 118. The method of forming the opening 122 is, for example, a laser drilling method or the like.

Then, referring to FIG. 1F, a seed layer 124 is formed on the build-up film 120, so that the seed layer 124 is formed on the surface of the build-up film 120 and the film wall of the build-up film 120 in the opening 122 and the pad 118. on. The material of the seed layer 124 is, for example, copper, titanium/aluminum (Ti/Al) or titanium/copper (Ti/Cu). The method of forming the seed layer 124 is, for example, electroless plating or sputtering.

Subsequently, referring to FIG. 1G, a dry film 126 is formed on the seed layer 124, and the dry film 126 is patterned to expose a portion of the seed layer 124. The material of the dry film 126 is, for example, a photoresist material such as a positive photoresist or a negative photoresist. The method of forming the dry film 126 is formed, for example, by performing a lithography process or the like.

Next, referring to FIG. 1H, at least one contact 128 is formed on the seed layer 124 exposed by the dry film 126, and the contact 128 fills the opening 122. The contact point 128 passes through the build-up film 120 and is electrically connected to the through-hole 106 of the interposer 102 via the seed layer 124 and the pad 118 , for example. The material of the contact 128 is, for example, copper or the like. The method of forming the contact 128 is, for example, an electroplating method or the like. Although the contact 128 is formed by the above method, it is not intended to limit the present invention.

Then, referring to FIG. 1I, the dry film 126 is removed. The method of removing the dry film 126 is, for example, a dry de-resist method or the like.

Next, referring to FIG. 1J, a portion of the seed layer 124 is removed with the contact 128 as a mask to form the most basic interposer buried substrate structure 10. The method of removing the partial seed layer 124 is, for example, an etch back method or the like.

Thereafter, referring to FIG. 1K, the steps of FIG. 1D to FIG. 1J may be repeated, and four build-up films 120 are formed on the polymer layer 114, and a plurality of contacts 128 are formed in the build-up film 120. In this embodiment, although the formation of the four-layer build-up film 120 is described as an example, it is not intended to limit the present invention. That is, it is within the scope of the present invention to form at least one buildup film 120 on the polymer layer 114 and to form at least one contact 128 in at least one buildup film 120.

Furthermore, referring to FIG. 1L, an opening 130 exposing the contact 128 may be selectively formed in the uppermost buildup film 120. The method of forming the opening 130 is formed, for example, by patterning the build-up film 120.

Next, referring to FIG. 1M, solder balls 132 may be selectively formed on the contacts 128 exposed by the openings 130. The material of the solder ball 132 is, for example, tin, tin silver (SnAg) or tin silver copper (SnAgCu). The method of forming the solder balls 132 is formed by, for example, a dip soldering process, a solder printing process, a ball bonding process, an electroplating process, or an electroless plating process.

Subsequently, referring to FIG. 1N, the carrier 100 can be selectively removed. The removal method of the carrier 100 is, for example, photographic peeling, mechanical force peeling, solvent dissolution peeling, or the like.

Next, referring to FIG. 10, a flip chip assembly process is performed to bond the wafer 200 to the interposer 102 in the interposer buried substrate structure 10 to form a flip chip structure 400. The flip chip assembly process, for example, is to bond the wafer 200 to the metal lines 112 of the redistribution layer 108 by solder balls 202, thereby bonding the wafer 200 to the interposer 102.

2A-2B are cross-sectional views showing a process of assembling a flip chip according to another embodiment of the present invention. Fig. 2A is a schematic illustration of the following description taken after Fig. 1M. The same reference numerals in FIGS. 2A to 2B denote the same members as those in FIGS. 1A to 1M, and have similar materials, configurations, formation methods, and effects, and thus will not be described again.

First, referring to FIG. 2A, an opening 134 is formed in the carrier 100, and the opening 134 exposes the metal line 112 of the redistribution layer 108. The method of forming the opening 134 is formed, for example, by performing a patterning process on the carrier 100.

Next, referring to FIG. 2B, a flip chip assembly process is performed to bond the wafer 300 to the interposer 102 in the interposer buried substrate structure 10 to form a flip chip structure 400'. The flip chip assembly process, for example, is to bond the wafer 300 to the metal lines 112 of the redistribution layer 108 exposed by the openings 134 by solder balls 302, thereby bonding the wafer 300 to the interposer 102.

Based on the above embodiments, in the manufacturing method of the interposer substrate structure 10, since the polymer layer 114 covers the interposer 102, the position of the interposer 102 can be fixed by the polymer layer 114, so that the interposer 102 can be avoided. The offset is generated in a pressurization process such as a subsequent build-up process, an assembly process, or a mold-sealing process, thereby improving the alignment accuracy of subsequent processes. Further, in the method of manufacturing the flip-chip structures 400 and 400', since the interposer-embedded substrate structure 10 is used for assembly, the alignment accuracy during assembly can be improved.

Hereinafter, the interposer buried substrate structure 10 proposed in the above embodiment will be described with reference to FIGS. 1J, 1M, and 1N.

First, referring to FIG. 1J, the interposer buried substrate structure 10 includes an interposer 102, a polymer layer 114, a build-up film 120, and at least one contact 128. The interposer 102 can include a substrate 104 and at least one through via 106, and the via is disposed in the substrate 104. The interposer 102 further includes a redistribution layer 108, and the redistribution layer 108 is disposed on the surface of the substrate 104 and electrically connected to the via via 106. The polymer layer 114 covers the interposer 102. The buildup film 120 is disposed on the polymer layer 114. The contact 128 passes through the build-up film 120 and is electrically connected to the interposer 102. In addition, the interposer buried substrate structure 10 more selectively includes at least one of the pad 118, the seed layer 124, and the carrier 100. The pad 118 is disposed in the polymer layer 114 and electrically connected to the through hole 106 of the interposer 102 and the contact 128. The seed layer 124 is disposed between the buildup film 120 and the contact 128. The interposer 102 is attached to the carrier 100 and the polymer layer 114 covers the carrier 100.

The interposer buried substrate structure 10 of FIG. 1M further includes solder balls 132 and has more buildup films 120 and contacts 128. Solder balls 132 are disposed, for example, on contacts 128 exposed by openings 130.

The interposer buried substrate structure 10 of FIG. 1N does not have the carrier 100 as compared to the interposer buried substrate structure 10 of FIG. 1M.

Those skilled in the art can select the interposer buried substrate structure 10 in FIG. 1J, FIG. 1M or FIG. 1N according to product design requirements for subsequent processes. In addition, the materials, characteristics, arrangement, formation method and efficacy of each component in the interposer substrate structure 10 have been described in detail in the above embodiments, and thus will not be described again.

Based on the above embodiments, in the interposer substrate structure 10, since the polymer layer 114 covers the interposer 102, the position of the interposer 102 can be fixed by the polymer layer 114, thereby preventing the interposer 102 from increasing in the subsequent stage. An offset occurs in the layer process, assembly process, or molding process.

Hereinafter, the flip chip structures 400, 400' proposed in the above embodiments will be described with reference to FIGS. 10 and 2B.

Referring to FIG. 10, the flip chip structure 400 includes an interposer buried substrate structure 10 and a wafer 200. The wafer 200 is bonded to the interposer 102 in the interposer buried substrate structure 10. In addition, the flip chip structure 400 further includes solder balls 202 for bonding the wafer 200 to the metal lines 112 of the redistribution layer 108 to bond the wafer 200 with the interposer 102.

In addition, referring to FIG. 2B, the flip chip structure 400' includes an interposer buried substrate structure 10 and a wafer 300. The wafer 300 is bonded to the interposer 102 in the interposer buried substrate structure 10. In addition, the flip chip structure 400' further includes solder balls 302 for bonding the wafer 300 to the metal lines 112 of the redistribution layer 108 to bond the wafer 300 with the interposer 102.

Based on the above embodiments, since the flip chip structures 400, 400' are assembled using the interposer buried substrate structure 10, the interposer 102 can be prevented from shifting and has better reliability.

In summary, the above embodiment has at least the following features:

1. The interposer buried substrate structure proposed in the above embodiment can effectively fix the position of the interposer.

2. The manufacturing method of the interposer substrate structure proposed by the above embodiment can avoid the offset of the interposer, thereby improving the alignment accuracy of the subsequent process.

3. The flip chip structure proposed in the above embodiments has better reliability.

4. With the manufacturing method of the flip chip structure proposed in the above embodiment, the alignment accuracy during assembly can be improved.

While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

10. . . Buried substrate structure

100. . . Carrier board

102. . . Intermediary layer

104. . . Substrate

106. . .矽 through hole

108. . . Redistribution layer

110. . . Dielectric layer

112. . . Metal line

114. . . Polymer layer

116, 122, 130, 134. . . Opening

118. . . Solder pad

120. . . Additive film

124. . . Seed layer

126. . . Dry film

128. . . contact

132. . . Solder ball

200, 300. . . Wafer

202, 302. . . Solder ball

400, 400'. . . Flip chip structure

1A to FIG. 1N are cross-sectional views showing a manufacturing process of an interposer substrate structure in accordance with an embodiment of the present invention.

FIG. 10 is a schematic diagram of a flip chip assembly according to an embodiment of the present invention.

2A-2B are cross-sectional views showing a process of assembling a flip chip according to another embodiment of the present invention.

10. . . Buried substrate structure

102. . . Intermediary layer

104. . . Substrate

106. . .矽 through hole

108. . . Redistribution layer

110. . . Dielectric layer

112. . . Metal line

114. . . Polymer layer

116, 122, 130. . . Opening

118. . . Solder pad

120. . . Additive film

124. . . Seed layer

128. . . contact

132. . . Solder ball

Claims (22)

An interposer embedded substrate structure comprising: an interposer; a polymer layer covering the interposer; at least one buildup film disposed on the polymer layer; and at least one contact passing through the buildup film And electrically connected to the interposer. The interposer embedded substrate structure according to claim 1, wherein the interposer comprises: a substrate; and at least one through hole disposed in the substrate. The interposer embedded substrate structure according to claim 2, wherein the interposer further comprises a redistribution layer disposed on the surface of the substrate and electrically connected to the via hole. The intermediate layer embedded substrate structure according to claim 1, wherein the material of the polymer layer comprises a polymer photosensitive material. The intermediate layer embedded substrate structure according to claim 4, wherein the polymer photosensitive material comprises polyimide (PI), benzocyclobutene (BCB), and SU-8 (epoxy). Resin), silicone or polybenzoxazole (PBO). The interposer embedded substrate structure according to claim 1, wherein the material of the build-up film comprises ABF, resin coated copper (RCC), polypropylene (PP) or resin (resin) ). The interposer embedded substrate structure according to claim 1, further comprising a carrier, the interposer is attached to the carrier, and the polymer layer covers the carrier. The interposer substrate structure as described in claim 1, further comprising a solder pad disposed in the polymer layer and electrically connected to the interposer and the contact. The interposer substrate structure as described in claim 1 further includes a seed layer disposed between the buildup film and the contact. The interposer substrate structure as described in claim 1 further includes a solder ball disposed on the contact. A method for manufacturing an interposer embedded substrate structure comprises: attaching an interposer to a carrier; forming a polymer layer covering the interposer and the carrier; forming at least one increase on the polymer layer a film; and forming at least one contact through the build-up film, and the contact is electrically connected to the interposer. The method for manufacturing an interposer embedded substrate structure according to claim 11, wherein the method for forming the polymer layer comprises a slit coating method or a screen printing method. The method of manufacturing the interposer substrate structure according to claim 11, wherein before forming the build-up film, the method further comprises: forming at least one first opening in the polymer layer, and the first opening Exposing the interposer; and forming a pad in the first opening, and the pad is electrically connected to the interposer. The method for manufacturing an interposer embedded substrate structure according to claim 13, wherein the method for forming the first opening comprises laser direct imaging. The method for manufacturing an interposer embedded substrate structure according to claim 11, wherein the method for forming the buildup film comprises a pressing method. The method for manufacturing an interposer embedded substrate structure according to claim 11, wherein the method of forming the contact through the buildup film comprises: forming an opening penetrating the buildup film; Forming a seed layer on the film; forming a dry film on the seed layer, the dry film exposing a portion of the seed layer; and forming the contact on the seed layer exposed by the dry film, and the The joint fills the opening. The method for manufacturing an interposer embedded substrate structure according to claim 16, wherein the method for forming the opening comprises a laser drilling method. The method for fabricating an interposer embedded substrate structure according to claim 16, wherein the method for forming the seed layer comprises electroless plating. The method for manufacturing an interposer embedded substrate structure according to claim 11, wherein the method for forming the contact comprises electroplating. The manufacturing method of the interposer substrate structure described in claim 11 further includes forming a solder ball on the contact. A flip-chip structure comprising: an interposer buried substrate structure according to any one of claims 1 to 10; and a wafer bonded to the interposer embedded in the interposer substrate structure Floor. A method of fabricating a flip chip structure, comprising: providing an interposer buried substrate structure according to any one of claims 1 to 10; and bonding a wafer to the interposer buried substrate structure The mediation layer in .