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TW201320406A - 提升混光效果之白光二極體封裝改良結構 - Google Patents

提升混光效果之白光二極體封裝改良結構 Download PDF

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TW201320406A
TW201320406A TW100141242A TW100141242A TW201320406A TW 201320406 A TW201320406 A TW 201320406A TW 100141242 A TW100141242 A TW 100141242A TW 100141242 A TW100141242 A TW 100141242A TW 201320406 A TW201320406 A TW 201320406A
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light
colloid
emitting chip
chip
accommodating portion
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TW100141242A
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bing-chen Wu
Huan-Ying Lu
shi-chao Shen
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Unity Opto Technology Co Ltd
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Priority to TW100141242A priority Critical patent/TW201320406A/zh
Priority to CN2011103705496A priority patent/CN103107168A/zh
Priority to DE202012101462U priority patent/DE202012101462U1/de
Priority to US13/464,101 priority patent/US20130119415A1/en
Priority to JP2012002717U priority patent/JP3177113U/ja
Priority to ES201200468U priority patent/ES1078480Y/es
Publication of TW201320406A publication Critical patent/TW201320406A/zh
Priority to US14/798,466 priority patent/US20150318452A1/en

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Abstract

一種提升混光效果之白光二極體封裝改良結構,包括:至少一第一發光晶片;至少一第二發光晶片;一支架結構,包含:一第一容置部,供以設置該第一發光晶片;一第二容置部,供以設置該第二發光晶片;一間隔部,供該第一發光晶片與該第二發光晶片打線連接設置;及一混光區,供該第一發光晶片與該第二發光晶片出光混光;一第一膠體,係參雜一綠光螢光粉並充填至該第一容置部;一第二膠體,係供充填該第二容置部;及一覆蓋膠體,封裝充填於該混光區內而設置於該第一膠體與該第二膠體上。本發明之設計可提升發光效率並達成混光均勻之點光源效果。

Description

提升混光效果之白光二極體封裝改良結構
本發明係有關於一種發光二極體結構,尤指一種在不影響波長600 nm~700nm發光二極體發光效率下,將波長400nm~500nm之光源部分轉換成為490nm~600nm之光線,並使不同波長之光線均勻混合之提升混光效果之白光二極體改良結構。
按,發光二極體作為白光背光應用在現今生活中十分廣泛,而白光背光主要由R、G、B三色發光二極體混光、及封裝互補色螢光粉兩種方式形成。由於R、G、B三3色發光二極體混光成本較高,紫外光激發多色螢光粉則發光穩定性差、光衰較大且有對健康影響之疑慮,較便宜且高效率的藍光發光二極體加上黃色螢光粉封裝所形成的白光發光二極體因而成為近來發光二極體背光源的主流。但由於黃色螢光粉相關之專利皆掌握於日本日亞化,且僅有兩色混光之白光其演色性較差,加上發光二極體製造封裝之技術逐漸成熟,1998年美國GELcore提出在藍色LED晶片上塗佈綠色和紅色螢光粉,藉由藍光LED分別激發可發紅光(SrS:Su或CaS:Eu)及綠光(SrGa2S4:Eu)之硫化物螢光粉,粉體發出紅、綠光與未被吸收之藍光混和產生白光之發光二極體發光效率大幅提昇,逐漸佔有市場優勢,成為背光源的主流之一。
除了單顆發光二極體晶片封裝之發光二極體,現今之技術亦能將一顆以上之發光二極體晶片封裝於同一發光二極體支架內而成為點光源,加上紅光螢光粉有效轉換效率較低,故,亦有以藍光發光二極體晶片及紅光發光二極體晶片加上綠光螢光粉封裝而成之發光二極體技術。如專利號US6577073(台灣公告號594828)揭露之內容,係將紅光與藍光發光二極體置於同一支架內,並覆蓋可發出綠光之螢光粉,使螢光粉受到藍光激發後發出綠光,便可與紅光、藍光混合成為白光之點光源。由於紅光之發光效率為三色發光二極體中偏低,更因為無法激發螢光粉而受到螢光粉之遮蔽降低其出光效率,使得此種發光二極體之出光效率較差,故,便有如公告號M380580之發光二極體結構設計,以資改善出光效率,但此種封裝結構製作過程繁雜,大幅增加成本且不利於量產。
故,有鑑於上述缺失,本發明提供一種結構簡單而便於製造之發光二極體封裝結構,且具有能提升混光效果及改良發光效率之功效,提供較高演色性之白光點光源。
本發明之一目的,旨在提供一種發光二極體封裝結構,使螢光粉能塗佈於指定區域以使其激發轉換光能效果提升,並能降低遮蔽其他波長光線之機率,使整體光效能提升。
本發明之次一目的,旨在提供一種便於封裝製程製作之支架結構,使前述之結構能易於量產而具有實質之產業效益,並利用光學設計增加混光效果使出光更加均勻。
為達上述之目的,本發明之提升混光效果之白光二極體封裝改良結構,包括:至少一第一發光晶片,供以提供波長400nm~500nm之光源;至少一第二發光晶片,供以提供波長600 nm~700nm之光源;一支架結構,係供以容裝該第一發光晶片與該第二發光晶片,使該第一發光晶片與該第二發光晶片個別之出光經過混光後形成白光點光源出光效果,該支架結構包含:一第一容置部,係為下窄上寬之杯狀結構,供以設置該第一發光晶片;一第二容置部,係為下窄上寬之杯狀結構,供以設置該第二發光晶片;一間隔部,位於該第一容置部與該第二容置部之間,供該第一發光晶片與該第二發光晶片打線連接設置;及一混光區,供該第一發光晶片與該第二發光晶片之出光於該混光區內混光後形成白光點光源;一第一膠體,係參雜一綠光螢光粉並充填至該第一容置部供以包覆該第一發光晶片,使第一發光晶片發出之部分光源經該綠光螢光粉激發後由波長400nm~500nm轉換至490nm~600nm之光源;一第二膠體,係供充填該第二容置部以包覆該第二發光晶片;及一覆蓋膠體,封裝充填於該混光區內而設置於該第一膠體與該第二膠體上。
有鑑於出光之指向性範圍,該第一容置部與該第二容置部之剖面為下窄上寬之梯形。且為了光學之混光及出光效果,該第一容置部與該第二容置部之剖面為下窄上寬之梯形,且該梯形非相鄰該間隔部之一底角為一直角之設置。
其中,該第一膠體之該綠光螢光粉係參雜形成於該第一發光晶片之表面而完全包覆該第一發光晶片,以達到光能轉換之效果,提供不同波長之出光,提升演色性之表現。
其中,該第二膠體係參雜一擴散劑,使出光更加均勻而無被該綠光螢光粉遮蔽之虞。為達到均勻混光之目的,該覆蓋膠體係參雜一擴散劑,使不同波長之光線均勻混合之後,形成白色之點光源。
為達到提升光效率及混光效果,並易於製造之目的,本發明之提升混光效果之白光二極體封裝改良結構,包括:至少一第一發光晶片,供以提供波長400nm~500nm之光源;至少一第二發光晶片,供以提供波長600 nm~700nm之光源;一支架結構,係供以容裝該第一發光晶片與該第二發光晶片,使該第一發光晶片與該第二發光晶片個別之出光經過混光後形成白光點光源出光效果,該支架結構包含:一第一容置部,係為下窄上寬之杯狀結構且其剖面為一圓弧狀,該第一容置部供以設置該第一發光晶片;一第二容置部,相鄰該第一容置部設置,該第二容置部係為下窄上寬之杯狀結構且其剖面為一圓弧狀並供以設置該第二發光晶片;及一混光區,供該第一發光晶片與該第二發光晶片之出光於該混光區內混光後形成白光點光源;一第一膠體,係參雜一綠光螢光粉並充填至該第一容置部供以包覆該第一發光晶片,使該第一發光晶片發出之部分光源經該綠光螢光粉激發後由波長400nm~500nm轉換至490nm~600nm之光源;一第二膠體,係供充填該第二容置部以包覆該第二發光晶片;及一覆蓋膠體,封裝充填於該混光區內而設置於該第一膠體與該第二膠體上。
其中,該第二膠體係參雜一擴散劑,使出光更加均勻,另該覆蓋膠體係參雜一擴散劑,俾能增進混光之效果。
藉由本發明之設計,使螢光粉僅參雜於波長400nm~500nm之光源上方,使螢光粉吸收光能並轉換成為490nm~600nm之光線,使出光涵蓋之波長範圍增加,因而提升白光二極體之演色性,且另一波長之出光並不會受到螢光粉之遮蔽而造成發光效率下降,因而改良習知之缺失。且,本發明藉由支架形狀之設計,分開置放二不同波長之發光二極體晶片,並分別進行點膠、螢光粉塗佈等製程,易於量產而具有實質之產業效益,且,能針對支架之形狀進行設計,利用光之特性使混光效果提升而使出光更加均勻,提供演色性、均勻度、耗電量低等特性較佳之白光發光二極體。
為使 貴審查委員能清楚了解本發明之內容,謹以下列說明搭配圖式,敬請參閱。
請參閱第1圖,係為本發明較佳實施例之剖面狀態圖(一)。如圖中所示,本發明提升混光效果之白光二極體封裝改良結構1,包含有至少一第一發光晶片10及至少一第二發光晶片12,該等兩種發光晶片係分別設置於一支架結構14內之一第一容置部140與一第二容置部142之底部,該第一容置部140為下窄上寬之杯狀結構,供以設置該第一發光晶片10,該第二容置部142係為下窄上寬之杯狀結構,供以設置該第二發光晶片142,該第一容置部140與該第二容置部142之剖面均為下窄上寬之梯形,使該第一發光晶片10與該第二發光晶片12之出光經過反射而射出,提升白光二極體整體之出光效率。該第一容置部140與該第二容置部142之間設置有一間隔部146,供該第一發光晶片10與該第二發光晶片12打線連接設置。該第一容置部140內充填一第一膠體160包覆該第一發光晶片10,該第一膠體160參雜一綠光螢光粉180,當該第一發光晶片10提供之波長400nm~500nm之第一光線L1進入該第一膠體160,並激發該綠光螢光粉180而發出波長490nm~600nm之第三光線L3。而該第二容置部142內則充填一第二膠體162並包覆該第二發光晶片12。
該第一容置部140與該第二容置部142上方為一混光區144,內封裝充填有一覆蓋膠體164而設置於該第一膠體160與該第二膠體162上。由於該綠光螢光粉180參雜於該第一膠體160內之參雜密度經過光學設計調整,故由該第一容置部140進入該混光區144之光線包含400nm~500nm及490nm~600nm兩種波段之第一光線L1及第三光線L3,同時該第二發光晶片12提供之波長600 nm~700nm之第二光線L2亦從該第二容置部142進入該混光區144,三種不同波段之光線於該混光區144經過混光後並形成白光之出光效果,為了更加提升混光之效果,該覆蓋膠體164係參雜一擴散劑182,使光線進入該混光區144時產生漫射、散射之光學反應而使混光更加均勻,提供白光光源以資背光、照明等應用。
本發明之該白光二極體封裝改良結構1更可適用於現今螢光粉塗佈之另外兩種方式,除了均勻參雜於該第一膠體160內之方式(Uniform distribution)外,更可運用非接觸式螢光粉塗佈(Remote Phosphor)或電泳披覆式螢光粉塗佈(Conformal coating)之技術將該綠光螢光粉180參雜於該第一膠體160中。請參閱第2圖之本發明較佳實施例之剖面狀態圖(二),該綠光螢光粉180係利用非接觸式螢光粉塗佈方式參雜於該第一膠體160中,使該綠光螢光粉180形成位於該第一容置部140杯口處之一薄層,該第一發光晶片10發出的光線經過該綠光螢光粉180薄層時激發該綠光螢光粉180而形成兩種不同波長之光線,並增進白光發光二極體之光輸出。
請參閱第3圖之本發明較佳實施例之剖面狀態圖(三),圖中所示係為利用電泳披覆技術使該綠光螢光粉180形成均勻厚度的敷行塗佈結構於該第一發光晶片10表面而完全包覆該第一發光晶片10,使光從該第一發光晶片10發出後隨即激發該綠光螢光粉180並轉換成為不同波長之光線,讓兩種不同波長的光線發生折射、散射的路徑更長,使其混光均勻。更可參雜該擴散劑182於該第一膠體160與該第二膠體162中,使光線經由該第一容置部140、第二容置部142及混光區144中參雜有該擴散劑182之該第一膠體160、第二膠體162及覆蓋膠體164之漫射,改善發光二極體顏色之均勻性,使其白光更加均勻。除此之外,為了使光線集中,亦可於該第一容置部140與該第二容置部142之形狀加以設計,使此二容置部之剖面為下窄上寬之梯形,且該梯形非相鄰該間隔部之一底角為一直角,該第一發光晶片10與該第二發光晶片12發散之光線產生折射現象而更往中間區域集中,提升其光使用率而增加出光效能。
請參閱第4圖之本發明另一較佳實施例之剖面狀態圖。如圖中所示,該提升混光效果之白光二極體封裝改良結構1係利用不同之幾何形狀設計以達到均勻混光並提升光效能之功效。該支架結構14係為圓弧狀設計,其包含之該第一容置部140及與其相連之該第二容置部142均為下窄上寬之杯狀結構且其剖面為一圓弧狀,供以設置該第一發光晶片10及第二發光晶片12,並藉由圓弧狀設計調整二發光晶片之出光角度。該第一發光晶片10提供波長400nm~500nm之光源,射入充填於該第一容置部140之該第一膠體160後,使該第一發光晶片10發出之部分光源經該綠光螢光粉180激發後由波長400nm~500nm轉換至490nm~600nm之光源,而該第二發光晶片12提供波長600 nm~700nm之光源,進入充填於該第二容置部142之該第二膠體162,並藉由參雜於該第二膠體162之該擴散劑182而產生散射。三種不同波長之光線分別由該第一容置部140及該第二容置部142射入該混光區144,並於該混光區144內混光後形成白光點光源。充填於該混光區144之該覆蓋膠體164中更可參雜該擴散劑182於其中,使混光效果更佳以提供較均勻之白光。
綜上所述,本發明在實施時具有下列優點:
1.兼顧白光二極體出光所涵蓋之波長範圍及發光效率。將螢光粉設置於可激發螢光粉之光源上方,不僅可達到將光能轉換為不同波長之光線之功效,更可避免螢光粉遮蔽其他光源之光線,故,在增加白光之演色性同時,更提高其發光效率,進而可節省電能消耗。
2.將一顆以上之發光晶片封裝於單顆發光二極體內,並僅將螢光粉覆蓋於特定發光晶片上方,於量產之製程較為困難而步驟繁複,進而使良率較低。藉由本發明之設計,針對支架形狀加以改良並配合發光晶片、封膠、螢光粉之配置,利用分別設置之容置槽置放發光晶片,並對各容置槽分別進行點膠、螢光粉塗佈等製程,易於量產而具有實質之產業效益。
3.針對支架之外型進行光學設計,利用光之特性使混光效果提升而使出光更加均勻,並調整出光使出光之效能更佳提升,提供演色性、均勻度、耗電量低等特性較佳之白光發光二極體。
唯,以上所述者,僅為本發明之較佳實施例而已,並非用以限定本發明實施之範圍,其他轉變方式亦皆在本案的範疇之中;故此等熟習此技術所作出等效或輕易的變化者,在不脫離本發明之精神與範圍下所作之均等變化與修飾,皆應涵蓋於本發明之專利範圍內。
1...白光二極體封裝改良結構
10...第一發光晶片
12...第二發光晶片
14...支架結構
140...第一容置部
142...第二容置部
144...混光區
146...間隔部
160...第一膠體
162...第二膠體
164...覆蓋膠體
180...綠光螢光粉
182...擴散劑
L1...第一光線
L2...第二光線
L3...第三光線
第1圖,為本發明較佳實施例之剖面狀態圖(一)。
第2圖,為本發明較佳實施例之剖面狀態圖(二)。
第3圖,為本發明較佳實施例之剖面狀態圖(三)。
第4圖,為本發明另一佳實施例之剖面狀態圖。
1...白光二極體封裝改良結構
10...第一發光晶片
12...第二發光晶片
14...支架結構
140...第一容置部
142...第二容置部
144...混光區
146...間隔部
160...第一膠體
162...第二膠體
164...覆蓋膠體
180...綠光螢光粉
182...擴散劑
L1...第一光線
L2...第二光線
L3...第三光線

Claims (9)

  1. 一種提升混光效果之白光二極體封裝改良結構,包括:至少一第一發光晶片,供以提供波長400nm~500nm之光源;至少一第二發光晶片,供以提供波長600 nm~700nm之光源;一支架結構,係供以容裝該第一發光晶片與該第二發光晶片,使該第一發光晶片與該第二發光晶片個別之出光經過混光後形成白光點光源出光效果,該支架結構包含:一第一容置部,係為下窄上寬之杯狀結構,供以設置該第一發光晶片;一第二容置部,係為下窄上寬之杯狀結構,供以設置該第二發光晶片;一間隔部,位於該第一容置部與該第二容置部之間,供該第一發光晶片與該第二發光晶片打線連接設置;及一混光區,供該第一發光晶片與該第二發光晶片之出光於該混光區內混光後形成白光點光源;一第一膠體,係參雜一綠光螢光粉並充填至該第一容置部供以包覆該第一發光晶片,使第一發光晶片發出之部分光源經該綠光螢光粉激發後由波長400nm~500nm轉換至490nm~600nm之光源;一第二膠體,係供充填該第二容置部以包覆該第二發光晶片;及一覆蓋膠體,封裝充填於該混光區內而設置於該第一膠體與該第二膠體上。
  2. 如申請專利範圍第1項所述之白光二極體封裝改良結構,其中,該第一容置部與該第二容置部之剖面為下窄上寬之梯形。
  3. 如申請專利範圍第1項所述之白光二極體封裝改良結構,其中,該第一容置部與該第二容置部之剖面為下窄上寬之梯形,且該梯形非相鄰該間隔部之一底角為一直角之設置。
  4. 如申請專利範圍第3項所述之白光二極體封裝改良結構,其中,該第一膠體之該綠光螢光粉係參雜形成於該第一發光晶片之表面而完全包覆該第一發光晶片。
  5. 如申請專利範圍第1~4其中任一項所述之白光二極體封裝改良結構,其中,該第二膠體係參雜一擴散劑。
  6. 如申請專利範圍第1~4其中任一項所述之白光二極體封裝改良結構,其中,該覆蓋膠體係參雜一擴散劑。
  7. 一種提升混光效果之白光二極體封裝改良結構,包括:至少一第一發光晶片,供以提供波長400nm~500nm之光源;至少一第二發光晶片,供以提供波長600 nm~700nm之光源;一支架結構,係供以容裝該第一發光晶片與該第二發光晶片,使該第一發光晶片與該第二發光晶片個別之出光經過混光後形成白光點光源出光效果,該支架結構包含:一第一容置部,係為下窄上寬之杯狀結構且其剖面為一圓弧狀,該第一容置部供以設置該第一發光晶片;一第二容置部,相鄰該第一容置部設置,該第二容置部係為下窄上寬之杯狀結構且其剖面為一圓弧狀並供以設置該第二發光晶片;及一混光區,供該第一發光晶片與該第二發光晶片之出光於該混光區內混光後形成白光點光源;一第一膠體,係參雜一綠光螢光粉並充填至該第一容置部供以包覆該第一發光晶片,使該第一發光晶片發出之部分光源經該綠光螢光粉激發後由波長400nm~500nm轉換至490nm~600nm之光源;一第二膠體,係供充填該第二容置部以包覆該第二發光晶片;及一覆蓋膠體,封裝充填於該混光區內而設置於該第一膠體與該第二膠體上。
  8. 如申請專利範圍第7所述之白光二極體封裝改良結構,其中,該第二膠體係參雜一擴散劑。
  9. 如申請專利範圍第7或8項所述之白光二極體封裝改良結構,其中,該覆蓋膠體係參雜一擴散劑。
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