TW201310726A - LED package - Google Patents

Abstract

An LED package includes a base, two electrodes, an LED chip and a package layer. The electrodes are formed on the base. The LED chip is located on the base and electrically connected to the electrodes. The package layer covers the base and encapsulates the LED chip therein. The package layer includes a primary part and a light dispersion part. The primary part includes a joint surface sticking to the base board and a lighting surface relative to the joint surface. The light dispersion part is formed by doping dispersion particles in one portion of the principal part. The light dispersion part surrounds the LED chip.

Description

Light emitting diode package structure

The present invention relates to semiconductor structures, and more particularly to a light emitting diode package structure.

Generally, when a Light Emitting Diode (LED) package structure is used as a light source of a direct type backlight module, it is generally required to have a light field with a wide light field to reduce the light spot and the light and dark band on the display screen. produce. As shown in FIG. 1 , a light emitting diode package structure 100 for generating a wide light field is formed. A V-shaped lens 102 is formed on an upper surface of the light emitting diode package structure 100 , and the lens 102 will emit a light emitting diode chip. A portion of the light exiting 103 is refracted toward the periphery of the light emitting diode package 100 to produce a wider light field. However, since the lens 102 is formed on the upper portion of the LED package structure 100, the thickness and volume thereof are large, and the manufacturing cost is also high.

In view of this, it is necessary to provide a low-cost and thin light-emitting diode package structure having a wide light field.

A light emitting diode package structure comprising a substrate, an electrode, a light emitting diode chip and a package. The electrode is formed on a surface of the substrate, and the LED is disposed on the substrate and electrically connected to the electrode. The package covers the substrate and covers the light emitting diode chip therein. The package includes a body and a light scattering region surrounding the body. The body includes a bonding surface attached to the substrate and a light emitting surface opposite to the bonding surface. The light scattering region is formed by doping scattering particles in a portion of the body, the light scattering region being disposed around the light emitting diode wafer.

In the above light-emitting diode package structure, the package body includes a light scattering region around the package body, and the light scattering region is doped with a relatively high concentration of scattering particles, thereby increasing light scattering, increasing lateral light emission, and improving The light field range of the light emitting diode package structure is formed by doping the scattering particles in the package body, so that the thickness and volume of the light emitting diode package structure are not increased, and the manufacturing cost is also It is low, so that the LED package structure can meet the requirements of low cost and light weight while increasing lateral light output.

Referring to FIG. 2 and FIG. 3 , an embodiment of the present invention provides a light emitting diode package structure 10 including a substrate 11 , an electrode 12 , a light emitting diode chip 13 , and a package 14 .

The substrate 11 is a rectangular flat plate for carrying the electrode 12, the LED body 13 and the package body 14 on its upper surface. The substrate 11 includes an upper surface 111 and a lower surface 112 opposite to the upper surface 111 and parallel to each other. The material of the substrate 11 is PPA (Polyphthalamide) or the like. It can be understood that the lengths of the sides of the substrate 11 may be the same or different. Further, the shape of the substrate 11 is not limited to a rectangle, and the shape may also be a circle or the like.

The electrodes 12 are formed on the surface of the substrate 11, the electrodes 12 are at least two, and each of the electrodes 12 is electrically insulated from each other. The electrodes 12 extend from the upper surface 111 of the substrate 11 to the lower surface 112, respectively. The material used for the electrode 12 is a metal material having good electrical conductivity, such as an alloy of one or more of gold, silver, copper, platinum, aluminum, nickel, tin or magnesium.

A light emitting diode chip 13 is attached to one of the electrodes 12. The LED chip 13 is electrically connected to the electrode 12 by a metal wire 131, respectively. It can be understood that the LED chip 13 can also be fixed on the electrode 12 on the surface of the substrate 11 by a flip chip and electrically connected to the electrode 12.

The package body 14 is formed on the upper surface 111 of the substrate 11, covering a portion of the electrode 12 at the upper surface 111, and covering the LED wafer 13 and the metal wires 131. The package body 14 can be a lens or an encapsulant. The package body 14 includes a body 141 covering the LED chip 13 and a light scattering region 142 located on a peripheral portion of the body 141 away from the LED body 13. The body 141 has a substantially hemispherical shape, and includes an arc-shaped upper light-emitting surface 1411 and a bonding surface 1412 that is disposed on the upper surface of the substrate 11. The light scattering region 142 includes an annular light diffusing surface 1421 located at a peripheral portion of the upper light emitting surface 1411 and a side light emitting surface 1422 extending perpendicularly from the outer peripheral edge of the light diffusing surface 1421 to be perpendicularly connected to the substrate 11. The light scattering region 142 covers an outer peripheral portion of the body 141. The light scattering region 142 is annular. The light scattering region 142 corresponds to a peripheral portion of the light exit angle of the light emitting diode chip 13. In this embodiment, the light scattering region 142 corresponds to a range between 45° and 90° of the light exit angle of the LED array 13 . The thickness of the light-scattering region 142 gradually increases from the junction between the light-diffusing surface 1421 and the upper light-emitting surface 1411 toward the junction between the light-diffusing surface 1421 and the side light-emitting surface 1422. The light scattering region 142 is formed by the scattering particles 143 being doped in the package body 14, wherein the doping concentration of the scattering particles 143 in the light scattering region 142 is higher than the doping concentration of the scattering particles 143 in the body 141. The scattering particles 143 are any one of titanium dioxide particles or cerium oxide particles. The package body 14 may further comprise a fluorescent conversion material, which may be garnet-based phosphor powder, citrate-based phosphor powder, orthosilicate-based phosphor powder, sulfide-based fluorescent material. Powder, thiogallate-based phosphor and nitride-based phosphor.

When the LED package structure 10 is in operation, the LED chip 13 emits light. As shown by the arrow in FIG. 2, the light in the central portion of the light-emitting diode chip 13 is incident on the body 141. The light from the upper surface of the light-emitting surface 1411 is emitted, and the light of the peripheral portion located in the light-emitting angle of the light-emitting diode wafer 13 passes through the body 141 and is incident on the light-scattering region 142. The light-scattering region 142 is doped with a high concentration of scattering particles. 143. The light is refracted by the scattering particles 143 in the light scattering region 142 and is mostly emitted from the side light emitting surface 1422, thereby increasing the irradiation range of the LED package structure 10 to form a wide light field. Please refer to FIG. 4 , which is a light distribution diagram of the LED package structure 10 according to the embodiment of the present invention. Since the light scattering region 142 is formed on the LED package 10 , it can be seen from the figure. The light emitting diode package structure 10 emits light in the direction of both sides, thereby increasing the lateral light output, thereby increasing the light field range of the light emitting diode package structure 10.

The light emitting diode package structure 20 of the second embodiment of the present invention is different from the light emitting diode package structure 10 of the first embodiment in that the light emitting diode package structure 20 is different from the light emitting diode package structure 20 of the second embodiment. The package body 24 is not doped with scattering particles 143.

Referring to FIG. 6 , a light emitting diode package structure 30 according to a third embodiment of the present invention is different from the light emitting diode package structure 10 of the first embodiment in that the light emitting diode package structure 30 is different from the light emitting diode package structure 30 . The light scattering region 142 is located inside the package body 34 between the light emitting diode chip 13 and the light emitting surface of the package body 34.

In the LED package structures 10, 20 and 30 provided by the embodiments of the present invention, the packages 14, 24 and 34 include a light scattering region 142 covering a peripheral portion of the light-emitting surface of the package, which can increase light scattering. The lateral light is increased to increase the light field range of the LED package structures 10, 20 and 30, and the LED packages 10, 20 and 30 are only in the packages 14, 24 and 34. The above effects can be achieved by doping, so that the thickness and volume of the LED package structures 10, 20 and 30 are not increased, and the manufacturing cost is also low, so that the LED package structure 10, 20 and 30 can increase the lateral light output while meeting the requirements of low cost and light weight.

In summary, the present invention complies with the requirements of the invention patent and submits a patent application according to law. The above description is only the preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art will be included in the following claims.

100,10,20,30. . . Light emitting diode package structure

102. . . lens

11. . . Substrate

111. . . Upper surface

112. . . lower surface

12. . . electrode

103,13. . . Light-emitting diode chip

131. . . Metal wire

14,24,34. . . Package

141. . . Ontology

1411. . . Glossy

1412. . . Joint surface

142. . . Light scattering region

1421. . . Light diffusing surface

1422. . . Side light surface

143. . . Scattering particle

FIG. 1 is a schematic diagram of a light emitting diode package structure in the prior art.

FIG. 2 is a schematic diagram of a light emitting diode package structure according to a first embodiment of the present invention.

3 is a top plan view of the light emitting diode package structure of FIG. 2.

4 is a light distribution graph of the light emitting diode package structure shown in FIG. 2.

FIG. 5 is a schematic diagram of a light emitting diode package structure according to a second embodiment of the present invention.

FIG. 6 is a schematic diagram of a light emitting diode package structure according to a third embodiment of the present invention.

10. . . Light emitting diode package structure

11. . . Substrate

111. . . Upper surface

112. . . lower surface

12. . . electrode

13. . . Light-emitting diode chip

131. . . Metal wire

14. . . Package

141. . . Ontology

1411. . . Glossy

1412. . . Joint surface

142. . . Light scattering region

1421. . . Light diffusing surface

1422. . . Side light surface

143. . . Scattering particle

Claims (10)

A light emitting diode package structure includes a substrate, an electrode, a light emitting diode chip and a package. The electrode is formed on a surface of the substrate, and the light emitting diode chip is disposed on the substrate and electrically connected to the electrode. The package covers the substrate and covers the LED chip, and the package includes a body and a light scattering region surrounding the body, the body includes a bonding with the substrate The surface and the light-emitting surface opposite to the bonding surface are formed by doping scattering particles in a portion of the body, the light scattering region being disposed around the light-emitting diode wafer. The light emitting diode package structure according to claim 1, wherein: the body is doped with scattering particles, but a doping concentration of the scattering particles in the light scattering region is higher than a doping of the scattering particles in the body. concentration. The light emitting diode package structure of claim 1, wherein the light scattering region is located near the light exiting surface. The light emitting diode package structure according to claim 1, wherein the light scattering region is located in a range in which an exit angle of the light emitting diode wafer is between 45° and 90°. The light emitting diode package structure of claim 4, wherein the light scattering region is annular. The light emitting diode package structure according to claim 5, wherein the thickness of the light scattering region is respectively emitted from the light diffusing surface and the light emitting surface to the light diffusing surface and the side light. The joint of the face gradually increases. The light emitting diode package structure according to claim 1, wherein the scattering particles are any one of titanium dioxide particles or cerium oxide particles. The light emitting diode package structure according to claim 3, wherein the body is substantially hemispherical, and the light scattering region covers an outer peripheral portion of the body. The light emitting diode package structure according to any one of claims 1 to 8, wherein the package body is a lens or an encapsulant. The light emitting diode package structure according to any one of claims 1 to 8, wherein the light emitting diode chip is fixed to the surface of the substrate by adhesion or flip chip.