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TW201303067A - Raw material gas generating device - Google Patents

Raw material gas generating device Download PDF

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Publication number
TW201303067A
TW201303067A TW101116485A TW101116485A TW201303067A TW 201303067 A TW201303067 A TW 201303067A TW 101116485 A TW101116485 A TW 101116485A TW 101116485 A TW101116485 A TW 101116485A TW 201303067 A TW201303067 A TW 201303067A
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gas
material gas
raw material
container
generating device
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TW101116485A
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Chinese (zh)
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TWI447258B (en
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Yosuke Kusumi
Koichi Ozaki
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Omron Tateisi Electronics Co
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)

Abstract

This invention is to suppress a decrease of the concentration of the raw material gas. A raw material gas generating device 101 is provided to heat a solid raw material 102 in a container 111, in order to generate a raw material gas for CVD processing. A carrier gas introduced into the container 111 via a venting pipe 113 is diffused by a diffusate 131 of a gas diffusing member 115, and then is sprayed from the openings 115A in a vertically downward direction. The raw material gas generated from the solid raw material 102, together with the carrier gas, are discharged to the outside of the container 111 from the top side of the solid raw material 102 via a venting pipe 116. This invention is applicable to a raw material gas generating device, for example, for generating raw material gas for CVD processing.

Description

原料氣體產生裝置 Raw material gas generating device

本案發明係關於原料氣體產生裝置,尤其是關於產生CVD(Chemical Vapor Deposition)加工用原料氣體的原料氣體產生裝置。 The present invention relates to a material gas generating device, and more particularly to a material gas generating device for generating a raw material gas for CVD (Chemical Vapor Deposition) processing.

以往,於產生CVD加工用原料氣體的原料氣體產生裝置中,對放入有例如羰基金屬等之粉末狀的固體原料之容器進行加熱,以產生原料氣體,並將運載氣體導入容器內,將原料氣體與此運載氣體一起排出至容器外,供給至進行CVD加工之雷射加工裝置(例如,參照專利文獻1)。 Conventionally, in a raw material gas generating device that generates a raw material gas for CVD processing, a container in which a powdery solid raw material such as a carbonyl metal or the like is placed is heated to generate a raw material gas, and a carrier gas is introduced into a container to feed the raw material. The gas is discharged to the outside of the container together with the carrier gas, and supplied to the laser processing apparatus for performing CVD processing (for example, refer to Patent Document 1).

第1圖顯示此種原料氣體產生裝置之構成的一例。 Fig. 1 shows an example of the configuration of such a material gas generating device.

第1圖之原料氣體產生裝置1係以包含圓筒形之容器11、圓板狀的蓋12、通氣管13、閥14、擴散體15、通氣管16及閥17之方式所構成。 The material gas generating device 1 of Fig. 1 is configured to include a cylindrical container 11, a disk-shaped cover 12, a vent pipe 13, a valve 14, a diffuser 15, a vent pipe 16, and a valve 17.

容器11係藉由未圖示之加熱手段而設定為既定的溫度,且藉由此熱使容器11內之固體原料2昇華,進而產生原料氣體。 The container 11 is set to a predetermined temperature by a heating means (not shown), and the solid raw material 2 in the container 11 is sublimated by the heat, thereby generating a material gas.

另一方面,運載氣體係透過通氣管13導入容器11內,並藉由設於通氣管13之前端的擴散體15,朝除比擴散體15更上方以外的各個方向大致均等地擴散。然後,經擴散之運載氣體流通於容器11內,且透過通氣管16將自固體原料2所產生之原料氣體運送至未圖示之進行CVD加工的雷射加工裝置。 On the other hand, the carrier gas system is introduced into the container 11 through the vent pipe 13, and is diffused substantially uniformly in all directions except the diffuser 15 by the diffuser 15 provided at the front end of the vent pipe 13. Then, the diffused carrier gas flows through the container 11, and the raw material gas generated from the solid raw material 2 is sent through a vent pipe 16 to a laser processing apparatus (not shown) for performing CVD processing.

此時,藉由擴散體15之作用,運載氣體大致上遍佈於固體原料2之表面附近而作流動,所以,固體原料2無論哪個部位幾乎皆被大致均等地消耗。 At this time, since the carrier gas flows substantially in the vicinity of the surface of the solid raw material 2 by the action of the diffuser 15, the solid raw material 2 is almost uniformly consumed in almost any part.

另外,將固體原料2充填於容器11後,固體原料2之表面之粒徑較小者便立即昇華,使得容器11內之原料氣體的濃度增高,所以,自通氣管16排出,而供給於雷射加工裝置之氣體(以下,稱為供給氣體)所佔之原料氣體的濃度(以下,稱為供給原料氣體濃度)增高。此後,隨著固體原料2之粒徑較小者被消耗完後,容器11內之原料氣體的濃度降低,供給原料氣體濃度達到穩定。 Further, after the solid raw material 2 is filled in the container 11, the particle size of the surface of the solid raw material 2 is immediately sublimated, so that the concentration of the material gas in the container 11 is increased, so that it is discharged from the vent pipe 16 and supplied to the mine. The concentration of the material gas (hereinafter referred to as the supply material gas concentration) occupied by the gas (hereinafter referred to as the supply gas) of the injection processing device is increased. Thereafter, as the smaller particle diameter of the solid raw material 2 is consumed, the concentration of the raw material gas in the container 11 is lowered, and the concentration of the supplied raw material gas is stabilized.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本國特開2001-59178號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-59178

於原料氣體產生裝置1中,當增加運載氣體之流量時,供給原料氣體濃度降低,並藉由固體原料2之消耗而造成供給原料氣體濃度之降低量增大。 In the material gas generating device 1, when the flow rate of the carrier gas is increased, the concentration of the supply material gas is lowered, and the amount of decrease in the concentration of the supply material gas is increased by the consumption of the solid material 2.

具體而言,於運載氣體之流量少的情況下,運載氣體停留於容器11內之時間變長,自固體原料2之表面所產生的原料氣體,藉由運載氣體被充分地運送至通氣管16的開口部16A。因此,容器11內之原料氣體的濃度差變小,通氣管16之開口部16A附近的原料氣體的濃度降低受到抑制。結果可抑制供給原料氣體濃度之降低。 Specifically, in the case where the flow rate of the carrier gas is small, the time during which the carrier gas stays in the container 11 becomes long, and the material gas generated from the surface of the solid raw material 2 is sufficiently transported to the vent pipe 16 by the carrier gas. Opening portion 16A. Therefore, the difference in concentration of the material gases in the container 11 is small, and the decrease in the concentration of the material gas in the vicinity of the opening 16A of the vent pipe 16 is suppressed. As a result, the decrease in the concentration of the feed material gas can be suppressed.

另外,如第2圖所示,即使因固體原料2之消耗的進 行而使得固體原料2之表面與通氣管16之開口部16A的距離擴大,容器11內之原料氣體的濃度差仍小,所以,仍可將供給原料氣體濃度之降低量抑制為較小。 In addition, as shown in Fig. 2, even due to the consumption of solid raw material 2 The distance between the surface of the solid raw material 2 and the opening 16A of the vent pipe 16 is increased, and the difference in the concentration of the material gas in the container 11 is still small, so that the amount of decrease in the concentration of the supply material gas can be suppressed to be small.

另一方面,當增加運載氣體之流量時,自擴散體15之側面噴出,未通過固體原料2之表面附近而直接流入通氣管16或停留於容器11內之上部的運載氣體增加。藉由此運載氣體之流動,會妨礙運載氣體自固體原料2之表面朝通氣管16的開口部16A的流動,使得原料氣體停留於固體原料2之表面附近。因此,容器11內之上下方向的原料氣體的濃度差變大,通氣管16之開口部16A附近的原料氣體的濃度降低。結果會造成供給原料氣體濃度之降低。 On the other hand, when the flow rate of the carrier gas is increased, the side of the diffuser 15 is ejected, and the carrier gas which does not pass through the vicinity of the surface of the solid raw material 2 and directly flows into the vent pipe 16 or stays in the upper portion of the vessel 11 increases. By the flow of the carrier gas, the flow of the carrier gas from the surface of the solid raw material 2 toward the opening portion 16A of the vent pipe 16 is prevented, so that the material gas stays near the surface of the solid raw material 2. Therefore, the difference in concentration of the material gases in the vertical direction in the container 11 is increased, and the concentration of the material gas in the vicinity of the opening 16A of the vent pipe 16 is lowered. As a result, the concentration of the feed material gas is lowered.

另外,如第2圖所示,隨著因固體原料2之消耗的進行而使得固體原料2之表面與通氣管16之開口部16A的距離擴大,流動於固體原料2之表面附近的運載氣體的比例減少,造成容器11內之上下方向的原料氣體的濃度差變大。結果,隨著固體原料2之消耗而帶來的供給原料氣體的濃度之降低量變大。 In addition, as shown in FIG. 2, the distance between the surface of the solid raw material 2 and the opening 16A of the vent pipe 16 is increased by the consumption of the solid raw material 2, and the carrier gas flowing near the surface of the solid raw material 2 is expanded. The ratio is decreased, and the difference in concentration of the material gases in the upper and lower directions in the container 11 is increased. As a result, the amount of decrease in the concentration of the supply material gas due to the consumption of the solid raw material 2 becomes large.

本發明係鑒於上述狀況而完成者,其目的在於抑制原料氣體之濃度的降低。 The present invention has been made in view of the above circumstances, and an object thereof is to suppress a decrease in the concentration of a material gas.

本發明之一態樣的原料氣體產生裝置,係從以蓋封閉之容器內的固體原料產生原料氣體之裝置,該原料氣體產生裝置具備:導入構件,其於前端部具有將用以運送原料氣體之運載氣體導入容器內的第1開口部;擴散構件,其於原料之上方以堵塞第1開口部之方式設置,使導 入容器內之運載氣體擴散,並具有將經擴散之運載氣體朝垂直向下方向噴出的第2開口部;及排出構件,其將原料氣體與運載氣體一起自原料的上方排出至容器外部。 A material gas generating device according to an aspect of the present invention is a device for generating a material gas from a solid raw material in a container closed by a lid, the material gas generating device comprising: an introduction member having a material for transporting a material at a front end portion a carrier gas is introduced into the first opening in the container; and the diffusion member is disposed above the material to block the first opening. The carrier gas that has entered the container diffuses, and has a second opening that ejects the diffused carrier gas in a vertically downward direction; and a discharge member that discharges the source gas together with the carrier gas from the upper side of the material to the outside of the container.

於本發明之一態樣中,自導入構件之第1開口部導入容器內的運載氣體係藉由擴散構件所擴散,經擴散之運載氣體自擴散構件之第2開口部朝垂直向下方向噴出,將原料氣體與運載氣體一起自原料的上方排出至容器外部。 In one aspect of the invention, the carrier gas system introduced into the container from the first opening of the introduction member is diffused by the diffusion member, and the diffused carrier gas is ejected vertically downward from the second opening of the diffusion member. The raw material gas is discharged together with the carrier gas from the upper side of the raw material to the outside of the container.

藉此,可抑制原料氣體之濃度的降低。 Thereby, the decrease in the concentration of the material gas can be suppressed.

此導入構件及排出構件係由例如通氣管所構成。此擴散構件係由例如含燒結金屬等之擴散體的氣體擴散構件所構成。 The introduction member and the discharge member are constituted by, for example, a vent pipe. This diffusion member is composed of, for example, a gas diffusion member including a diffusion body of a sintered metal or the like.

擴散構件之第2開口部可配置於容器之水平方向的大致中央。 The second opening of the diffusion member may be disposed substantially at the center of the horizontal direction of the container.

藉此,可更有效率地抑制原料氣體之濃度的降低。 Thereby, the decrease in the concentration of the material gas can be more effectively suppressed.

擴散構件可具有複數個第2開口部,複數個第2開口部係能以容器之水平方向的中央作為中心大致對稱地配置。 The diffusion member may have a plurality of second openings, and the plurality of second openings may be arranged substantially symmetrically with the center in the horizontal direction of the container as a center.

藉此,可更有效率地抑制原料氣體之濃度的降低。 Thereby, the decrease in the concentration of the material gas can be more effectively suppressed.

根據本發明之一態樣,可抑制原料氣體之濃度的降低。 According to an aspect of the invention, it is possible to suppress a decrease in the concentration of the material gas.

[實施發明之形態] [Formation of the Invention]

以下,針對用以實施本發明之形態(以下,稱為實施形態)進行說明。又,說明係依如下之順序進行。 Hereinafter, a mode for carrying out the invention (hereinafter referred to as an embodiment) will be described. Further, the description is made in the following order.

1.第1實施形態 1. First embodiment

2.第2實施形態 2. Second embodiment

3.第3實施形態 3. Third embodiment

4.變化例 4. Change

<1.第1實施形態> <1. First embodiment> [原料氣體產生裝置101之構成例] [Configuration Example of Material Gas Generator 101]

第3圖為模式地顯示屬應用本發明之原料氣體產生裝置的第1實施形態之原料氣體產生裝置101的構成例之剖視圖。 Fig. 3 is a cross-sectional view showing a configuration example of a material gas generating device 101 according to the first embodiment of the material gas generating device to which the present invention is applied.

原料氣體產生裝置101係對放入容器111內之固體原料102進行加熱,而產生CVD加工用原料氣體的裝置。固體原料102係由例如羰基金屬等之於室溫~50℃左右且具有1hPa左右之較高的飽和蒸氣壓之粉末狀物質所構成。 The material gas generating device 101 is a device that heats the solid raw material 102 placed in the container 111 to generate a raw material gas for CVD processing. The solid raw material 102 is composed of, for example, a carbonyl metal or the like having a high saturated vapor pressure of about 1 hPa at room temperature to about 50 ° C.

原料氣體產生裝置101係以包含圓筒形之容器111、圓板狀的蓋112、通氣管113、閥114、氣體擴散構件115、通氣管116及閥117之方式所構成。 The material gas generating device 101 is configured to include a cylindrical container 111, a disk-shaped lid 112, a vent pipe 113, a valve 114, a gas diffusion member 115, a vent pipe 116, and a valve 117.

容器111係藉由未圖示之加熱手段而設定為適宜的溫度,且藉由容器111之熱而使固體原料102昇華,以產生原料氣體。 The container 111 is set to a suitable temperature by a heating means (not shown), and the solid raw material 102 is sublimated by the heat of the container 111 to generate a material gas.

蓋112係可拆裝式地安裝於容器111上,例如,充填固體原料102於容器111內時,自容器111拆下蓋112。另外,於容器111及蓋112所接觸之部分,以容器111內之氣體不外洩的方式被實施氣密性密封。 The lid 112 is detachably mounted to the container 111. For example, when the solid material 102 is filled in the container 111, the lid 112 is removed from the container 111. Further, the portion in contact with the container 111 and the lid 112 is hermetically sealed so that the gas in the container 111 does not leak.

另外,於蓋112上以在垂直方向貫通之方式設有通氣管113及通氣管116。 Further, a vent pipe 113 and a vent pipe 116 are provided on the lid 112 so as to penetrate in the vertical direction.

通氣管113係用以將運送原料氣體之運載氣體導入容器111內。又,運載氣體係使用例如氬氣等之惰性氣體。 The vent pipe 113 is for introducing the carrier gas carrying the material gas into the container 111. Further, the carrier gas system uses an inert gas such as argon gas.

另外,於通氣管113上設有閥114,其可使運載氣體流動或予以截斷。 Further, a valve 114 is provided on the vent pipe 113, which allows the carrier gas to flow or be cut off.

又,於通氣管113之前端設有氣體擴散構件115。此氣體擴散構件115係由擴散體131及框體132所構成。 Further, a gas diffusion member 115 is provided at the front end of the vent pipe 113. The gas diffusion member 115 is composed of a diffuser 131 and a frame 132.

擴散體131係由例如燒結金屬所構成,且以堵塞通氣管113之前端的開口部113A(第1開口部)的方式設置。藉此,自通氣管113之開口部113A排出的運載氣體全部流入擴散體131中,藉由擴散體131所擴散。 The diffuser 131 is made of, for example, a sintered metal, and is provided to block the opening 113A (first opening) at the front end of the vent pipe 113. Thereby, all of the carrier gas discharged from the opening 113A of the vent pipe 113 flows into the diffuser 131 and is diffused by the diffuser 131.

另外,擴散體131係除了上面之堵塞通氣管113之前端的開口部113A的部分及下面以外,其餘均由框體132所包覆。藉此,由擴散體131所擴散之運載氣體,係自擴散體131的下面排出,且自藉由框體132所形成之氣體擴散構件115的開口部115A(第2開口部)朝垂直向下方向噴出。 Further, the diffuser 131 is covered by the frame 132 except for the portion of the opening 113A at the front end of the vent pipe 113 and the lower surface thereof. Thereby, the carrier gas diffused by the diffuser 131 is discharged from the lower surface of the diffuser 131, and the opening 115A (second opening) of the gas diffusion member 115 formed by the frame 132 faces vertically downward. Spurt in the direction.

通氣管116係藉由氣密性接頭等與進行CVD加工之雷射加工裝置(未圖示)連接,將原料氣體及運載氣體(亦即供給氣體)自容器111運出,供給於雷射加工裝置。另外,於通氣管116上設有閥117,其可使供給氣體流動或予以截斷。 The vent pipe 116 is connected to a laser processing apparatus (not shown) that performs CVD processing by a gas-tight joint or the like, and the raw material gas and the carrier gas (that is, the supply gas) are carried out from the container 111 to be supplied to the laser processing. Device. Further, a valve 117 is provided on the vent pipe 116, which allows the supply gas to flow or be cut off.

[原料氣體產生裝置101之氣體流動] [Gas Flow of Material Gas Generator 101]

在此,針對原料氣體產生裝置101中之氣體的流動進行說明。 Here, the flow of the gas in the material gas generating device 101 will be described.

透過通氣管113導入容器111內之運載氣體,自通氣管113之開口部113A排出後,藉由通過氣體擴散構件115之擴散體131而被擴散,自開口部115A朝垂直向下方向噴出。自氣體擴散構件115噴出之運載氣體,朝大致垂直向下方向下降至固體原料102之表面為止,且噴吹至固體原料102之表面,而沿固體原料102之表面朝容器111的內壁方向擴散。然後,運載氣體沿容器111之內壁上升。 The carrier gas introduced into the container 111 through the vent pipe 113 is discharged from the opening 113A of the vent pipe 113, diffused by the diffuser 131 of the gas diffusion member 115, and ejected from the opening 115A in the vertical downward direction. The carrier gas ejected from the gas diffusion member 115 is lowered in a substantially vertical downward direction to the surface of the solid raw material 102, and is sprayed to the surface of the solid raw material 102, and diffused toward the inner wall of the container 111 along the surface of the solid raw material 102. . Then, the carrier gas rises along the inner wall of the container 111.

藉由此運載氣體之流動,自固體原料102產生之原料氣體,被運送至通氣管116的開口部116A,與運載氣體一起流入通氣管116。然後,原料氣體及運載氣體(亦即供給氣體)透過通氣管116被供給至CVD加工裝置。 The raw material gas generated from the solid raw material 102 is transported to the opening portion 116A of the vent pipe 116 by the flow of the carrier gas, and flows into the vent pipe 116 together with the carrier gas. Then, the material gas and the carrier gas (that is, the supply gas) are supplied to the CVD processing apparatus through the vent pipe 116.

如此,於原料氣體產生裝置101中,自氣體擴散構件115噴出之運載氣體的大部分流動於固體原料102之表面附近,用於原料氣體之運送。另一方面,幾乎不會產生有不通過固體原料102之表面附近而直接流入通氣管116或者停留於容器111內之上部的運載氣體。 As described above, in the material gas generating device 101, most of the carrier gas ejected from the gas diffusion member 115 flows in the vicinity of the surface of the solid material 102 for the transportation of the material gas. On the other hand, there is almost no carrier gas which flows directly into the vent pipe 116 or stays in the upper portion of the container 111 without passing near the surface of the solid raw material 102.

因此,於固體原料102之表面所產生之原料氣體,藉由運載氣體而效率良好地被運送至通氣管116的開口部116A,所以,容器111內之上下方向的原料氣體之濃度差變小。結果可抑制供給於雷射加工裝置之供給氣體所佔之原料氣體的濃度(供給原料氣體濃度)之降低。 Therefore, the material gas generated on the surface of the solid raw material 102 is efficiently transported to the opening portion 116A of the vent pipe 116 by the carrier gas, so that the difference in concentration of the material gases in the upper and lower directions in the container 111 is small. As a result, it is possible to suppress a decrease in the concentration of the material gas (supply material gas concentration) occupied by the supply gas supplied to the laser processing apparatus.

另外,固體原料102之被自氣體擴散構件115噴出之運載氣體所直接噴吹的部分,比其周邊部分更快地被消耗,因此,如第4圖所示,會於固體原料102之表面產生凹陷。但是,即使產生凹陷而造成固體原料102之表面與 通氣管116的開口部116A之距離擴大,藉由上述運載氣體之流動,仍可效率良好地將原料氣體運送至通氣管116的開口部116A,所以,可抑制容器111內之上下方向的原料氣體之濃度差的擴大。結果可將隨固體原料102之消耗而帶來的供給原料氣體濃度之降低量抑制成最小程度。 Further, the portion of the solid raw material 102 directly blown by the carrier gas ejected from the gas diffusion member 115 is consumed faster than the peripheral portion thereof, and therefore, as shown in Fig. 4, it is generated on the surface of the solid raw material 102. Depression. However, even if a depression is generated, the surface of the solid raw material 102 is caused The distance between the opening portion 116A of the vent pipe 116 is increased, and the material gas can be efficiently transported to the opening portion 116A of the vent pipe 116 by the flow of the carrier gas. Therefore, the material gas in the upper and lower directions in the container 111 can be suppressed. The increase in concentration difference. As a result, the amount of decrease in the concentration of the supplied material gas due to the consumption of the solid raw material 102 can be suppressed to a minimum.

因此,可長期間地使供給於雷射加工裝置之供給氣體的供給原料氣體濃度達到穩定。 Therefore, the concentration of the supply material gas supplied to the supply gas of the laser processing apparatus can be stabilized for a long period of time.

又,即使增加運載氣體之流量,大部分之運載氣體同樣被用於原料氣體之運送,容器111內之上下方向的原料氣體之濃度差幾乎不會擴大,所以可抑制供給原料氣體濃度之降低。 Further, even if the flow rate of the carrier gas is increased, most of the carrier gas is used for the transportation of the material gas, and the difference in the concentration of the material gas in the upper and lower directions in the container 111 is hardly increased, so that the decrease in the concentration of the supply material gas can be suppressed.

因此,可增加運載氣體之流量,而不會增加容器111之容量,且不會造成供給原料氣體濃度的降低。 Therefore, the flow rate of the carrier gas can be increased without increasing the capacity of the container 111 without causing a decrease in the concentration of the supply material gas.

另外,尤其是無需採用高價之備品或複雜的構成,可藉由簡單之構成實現本發明。 Further, the present invention can be realized by a simple configuration, in particular, without using a high-priced spare or a complicated constitution.

<2.第2實施形態> <2. Second embodiment> [原料氣體產生裝置201之構成例] [Configuration Example of Raw Material Gas Generator 201]

第5圖為模式地顯示屬應用本發明之原料氣體產生裝置的第2實施形態之原料氣體產生裝置201的構成例之剖視圖。又,圖中,針對與第3圖所對應之部分,賦予相同之元件符號。 Fig. 5 is a cross-sectional view showing a configuration example of a material gas generating device 201 according to a second embodiment of the material gas generating device to which the present invention is applied. In the drawings, the same reference numerals are given to the parts corresponding to those in FIG.

與第3圖之原料氣體產生裝置101相比較,原料氣體產生裝置201係於通氣管113及氣體擴散構件115之配置上存在有差異。亦即,於原料氣體產生裝置201中,通氣管113及氣體擴散構件115係配置於容器111之水平方向 的大致中央。 The material gas generating device 201 differs from the material gas generating device 101 of Fig. 3 in the arrangement of the vent pipe 113 and the gas diffusion member 115. That is, in the material gas generating device 201, the vent pipe 113 and the gas diffusion member 115 are disposed in the horizontal direction of the container 111. The approximate center.

又,原料氣體產生裝置201中之氣體的流動,係除了自氣體擴散構件115噴出之運載氣體噴吹於固體原料102表面的大致中央之點以外,其餘與原料氣體產生裝置101大致相同。因此,於原料氣體產生裝置201中,隨著固體原料102之消耗,如第6圖所示,會於固體原料102之表面的大致中央處產生凹陷。 In addition, the flow of the gas in the material gas generating device 201 is substantially the same as that of the material gas generating device 101 except that the carrier gas ejected from the gas diffusing member 115 is sprayed at substantially the center of the surface of the solid material 102. Therefore, in the material gas generating device 201, as the solid raw material 102 is consumed, as shown in Fig. 6, a depression is generated at substantially the center of the surface of the solid raw material 102.

於上述原料氣體產生裝置101中,固體原料102表面的凹陷形成於容器111之內壁附近,所以,當凹陷增大時,便會與容器111之內壁相碰,從而會抑制凹陷之面積的擴大。 In the above-described material gas generating device 101, the depression on the surface of the solid raw material 102 is formed near the inner wall of the container 111, so that when the depression is increased, it collides with the inner wall of the container 111, thereby suppressing the area of the depression. expand.

另一方面,於原料氣體產生裝置201中,於固體原料102之表面的大致中央形成有凹陷,所以,即使凹陷增大,亦不會與容器111之內壁相碰。因此,凹陷之表面積的擴大未受抑制。 On the other hand, in the material gas generating device 201, a recess is formed substantially at the center of the surface of the solid material 102, so that even if the recess is increased, it does not collide with the inner wall of the container 111. Therefore, the enlargement of the surface area of the recess is not suppressed.

因此,於固體原料102之消耗所進行之時刻,因固體原料102之表面積的增大,所以,原料氣體產生裝置201比原料氣體產生裝置101更可抑制原料氣體之濃度降低。 Therefore, since the surface area of the solid raw material 102 increases as the consumption of the solid raw material 102 proceeds, the raw material gas generating device 201 can suppress the decrease in the concentration of the raw material gas more than the raw material gas generating device 101.

另外,第7圖為對原料氣體產生裝置201與習知之原料氣體產生裝置1的供給原料氣體濃度進行比較之曲線圖。橫軸表示使用時間,縱軸表示供給原料氣體濃度。另外,上側之曲線表示原料氣體產生裝置201之供給原料氣體濃度的變化,下側之曲線表示原料氣體產生裝置1之供給原料氣體濃度的變化。 In addition, Fig. 7 is a graph comparing the supply material gas concentration of the material gas generating device 201 and the conventional material gas generating device 1. The horizontal axis represents the use time, and the vertical axis represents the supply material gas concentration. Further, the upper curve shows the change in the supply material gas concentration of the material gas generator 201, and the lower curve shows the change in the supply material gas concentration of the material gas generator 1.

如此,原料氣體產生裝置201比原料氣體產生裝置1 ,更可抑制隨著隨固體原料102之消耗而帶來的供給原料氣體濃度之降低。 Thus, the material gas generating device 201 is larger than the material gas generating device 1 Further, the decrease in the concentration of the supply material gas accompanying the consumption of the solid raw material 102 can be suppressed.

<3.第3實施形態> <3. Third embodiment> [原料氣體產生裝置301之構成例] [Configuration Example of Material Gas Generator 301]

第8圖為模式地顯示屬應用本發明之原料氣體產生裝置的第3實施形態之原料氣體產生裝置301的構成例之剖視圖。又,圖中,針對與第5圖所對應之部分,賦予相同之元件符號。 Fig. 8 is a cross-sectional view showing a configuration example of a material gas generating device 301 according to a third embodiment of the material gas generating device to which the present invention is applied. In the drawings, the same reference numerals are given to the parts corresponding to those in FIG.

原料氣體產生裝置301與第5圖之原料氣體產生裝置201相比較,差異點為:在通氣管113之前端改設氣體擴散構件311來取代氣體擴散構件115。 The material gas generating device 301 is different from the material gas generating device 201 of FIG. 5 in that a gas diffusion member 311 is replaced at the front end of the vent pipe 113 instead of the gas diffusion member 115.

與氣體擴散構件115相比較,氣體擴散構件311係在擴散體的數量上與氣體擴散構件115不同。具體而言,氣體擴散構件311係由擴散體331a~331d(其中,未圖示擴散體331b及331d)及框體332所構成。 The gas diffusion member 311 is different from the gas diffusion member 115 in the number of the diffusion bodies as compared with the gas diffusion member 115. Specifically, the gas diffusion member 311 is composed of diffusers 331a to 331d (the diffusion bodies 331b and 331d are not shown) and the frame 332.

第9圖為從下方觀察氣體擴散構件311之圖。於氣體擴散構件311之下面,以將中心軸C作為中心而大致對稱的方式設有藉由框體332所形成之開口部311A~311D。藉此,因氣體擴散構件311配置於容器111之水平方向的大致中央,所以,開口部311A~311D係以容器111之水平方向的中央作為中心而大致對稱的方式配置。另外,於第9圖中雖未圖示,於開口部311A~311D之上部分別設有擴散體331a~331d。 Fig. 9 is a view of the gas diffusion member 311 as viewed from below. Below the gas diffusion member 311, openings 311A to 311D formed by the frame 332 are provided so as to be substantially symmetrical with respect to the central axis C as a center. In this way, since the gas diffusion member 311 is disposed substantially at the center in the horizontal direction of the container 111, the openings 311A to 311D are arranged substantially symmetrically with the center of the container 111 in the horizontal direction as a center. Further, although not shown in FIG. 9, diffusers 331a to 331d are provided on the upper portions of the openings 311A to 311D, respectively.

另外,框體332係形成使自通氣管113之開口部113A排出的運載氣體流入擴散體331a~331d的上面並自下面 排出的路徑。因此,流入氣體擴散構件311之運載氣體,藉由擴散體331a~331d所擴散,並自擴散體331a~331d的下面排出,自開口部311A~311D朝垂直向下方向噴出。 Further, the casing 332 is formed such that the carrier gas discharged from the opening 113A of the vent pipe 113 flows into the upper surface of the diffusers 331a to 331d and from below. The path of the discharge. Therefore, the carrier gas that has flowed into the gas diffusion member 311 is diffused by the diffusers 331a to 331d, and is discharged from the lower surfaces of the diffusers 331a to 331d, and is ejected from the openings 311A to 311D in the vertical downward direction.

藉此,與原料氣體產生裝置101及原料氣體產生裝置201相比較,於原料氣體產生裝置301中,運載氣體可更均勻地被噴吹至固體原料102之表面。因此,產生於固體原料102之表面的凹陷之大小及深度變小。 Thereby, in the material gas generating device 301, the carrier gas can be more uniformly sprayed onto the surface of the solid raw material 102 as compared with the material gas generating device 101 and the material gas generating device 201. Therefore, the size and depth of the depressions generated on the surface of the solid raw material 102 become small.

因此,可藉由運載氣體更有效率地將在固體原料102之表面產生的原料氣體運送至通氣管116的開口部116A,從而可減小容器111內之上下方向的原料氣體之濃度差。結果可更有效地抑制供給原料氣體濃度之降低。 Therefore, the material gas generated on the surface of the solid raw material 102 can be more efficiently transported to the opening portion 116A of the vent pipe 116 by the carrier gas, whereby the difference in concentration of the material gases in the upper and lower directions in the container 111 can be reduced. As a result, the decrease in the concentration of the feed material gas can be more effectively suppressed.

又,開口部311A~311D及擴散體331a~331d的位置,亦可配置於以氣體擴散構件115之中心軸C為中心而大致對稱的其他位置。 Further, the positions of the openings 311A to 311D and the diffusers 331a to 331d may be disposed at other positions substantially symmetrical about the central axis C of the gas diffusion member 115.

例如,如第10圖所示,亦可將開口部311A配置於氣體擴散構件311之中心軸C上,並以中心軸C為中心大致對稱的方式配置開口部311B~311D及擴散體331a~331d(未圖示)。 For example, as shown in FIG. 10, the opening 311A may be disposed on the central axis C of the gas diffusion member 311, and the openings 311B to 311D and the diffusion bodies 331a to 331d may be disposed substantially symmetrically about the central axis C. (not shown).

另外,開口部(擴散體)之數量不限於1或4個,亦可設定為任意個。又,於設置複數個開口部(擴散體)之情況下,如第9圖及第10圖之例示,以將氣體擴散構件之中心軸C作為中心大致對稱的方式配置較為適宜。 Further, the number of the openings (diffusion bodies) is not limited to one or four, and may be set to any number. In addition, when a plurality of openings (diffusion bodies) are provided, as exemplified in FIGS. 9 and 10, it is preferable to arrange the center axis C of the gas diffusion member as a center.

又,氣體擴散構件之開口部的口徑及數量,較佳為以基於運載氣體之流量、容器111之大小等而設定成最適宜之值。 Further, the diameter and the number of the openings of the gas diffusion member are preferably set to optimum values based on the flow rate of the carrier gas, the size of the container 111, and the like.

<4.變化例> <4. Change example>

以下,針對本發明之實施形態的變化例進行說明。 Hereinafter, a modification of the embodiment of the present invention will be described.

[變化例1] [Variation 1]

例如,如原料氣體產生裝置101~301,只要其構成為能使運載氣體自固體原料102之上方朝垂直向下方向噴出,則通氣管113之形狀及位置並無特別之限制。例如,亦可將通氣管113作成L字形,且使其貫通容器111之側面,而自容器111之側面導入運載氣體。 For example, the material gas generating devices 101 to 301 are not particularly limited in shape and position as long as they are configured such that the carrier gas can be ejected from the upper side of the solid material 102 in a vertically downward direction. For example, the vent pipe 113 may be formed in an L shape and passed through the side surface of the container 111 to introduce a carrier gas from the side of the container 111.

[變化例2] [Variation 2]

另外,只要將開口部116A設置於比容器111內的固體原料102的表面高之位置,且可將供給氣體排出至容器111之外部,則通氣管116之形狀及位置並無特別之限制。 In addition, the shape and position of the vent pipe 116 are not particularly limited as long as the opening portion 116A is provided at a position higher than the surface of the solid material 102 in the container 111 and the supply gas can be discharged to the outside of the container 111.

[變化例3] [Variation 3]

又,容器111之形狀不限於圓筒形,亦可為其他形狀。 Further, the shape of the container 111 is not limited to a cylindrical shape, and may be other shapes.

[變化例4] [Variation 4]

另外,氣體導入用及氣體排出用之通氣管的數量,不限於各設一個之情況,亦可設置2個以上。 In addition, the number of the vent pipes for gas introduction and gas discharge is not limited to one, and two or more may be provided.

又,本發明之實施形態,不限於上述實施形態,在未超出本發明之實質範圍內,可作各種之變更。 Further, the embodiment of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit and scope of the invention.

101‧‧‧原料氣體產生裝置 101‧‧‧Material gas generating device

102‧‧‧固體原料 102‧‧‧ solid materials

111‧‧‧容器 111‧‧‧ Container

112‧‧‧蓋 112‧‧‧ Cover

113‧‧‧通氣管 113‧‧‧ snorkel

115‧‧‧氣體擴散構件 115‧‧‧ gas diffusion members

115A‧‧‧開口部 115A‧‧‧ openings

116‧‧‧通氣管 116‧‧‧ snorkel

131‧‧‧擴散體 131‧‧‧Diffuser

132‧‧‧框體 132‧‧‧ frame

201‧‧‧原料氣體產生裝置 201‧‧‧Material gas generating device

301‧‧‧原料氣體產生裝置 301‧‧‧Material gas generating device

311‧‧‧氣體擴散構件 311‧‧‧ gas diffusion members

311A~311D‧‧‧開口部 311A~311D‧‧‧ openings

331a~331d‧‧‧擴散體 331a~331d‧‧‧ diffuser

332‧‧‧框體 332‧‧‧ frame

第1圖為習知之原料氣體產生裝置之構成的一例之圖。 Fig. 1 is a view showing an example of a configuration of a conventional material gas generating device.

第2圖為習知之原料氣體產生裝置之構成的一例之圖。 Fig. 2 is a view showing an example of a configuration of a conventional material gas generating device.

第3圖為應用本發明之原料氣體產生裝置的第1實施形態之圖。 Fig. 3 is a view showing a first embodiment of a material gas generating device to which the present invention is applied.

第4圖為應用本發明之原料氣體產生裝置的第1實施形態之圖。 Fig. 4 is a view showing a first embodiment of a material gas generating device to which the present invention is applied.

第5圖為應用本發明之原料氣體產生裝置的第2實施形態之圖。 Fig. 5 is a view showing a second embodiment of the material gas generating device to which the present invention is applied.

第6圖為應用本發明之原料氣體產生裝置的第2實施形態之圖。 Fig. 6 is a view showing a second embodiment of the material gas generating device to which the present invention is applied.

第7圖為對習知之原料氣體產生裝置與應用本發明之原料氣體產生裝置的原料氣體的濃度進行比較之曲線圖。 Fig. 7 is a graph comparing the concentration of the material gas of the conventional material gas generating device and the material gas generating device to which the present invention is applied.

第8圖為應用本發明之原料氣體產生裝置的第3實施形態之圖。 Fig. 8 is a view showing a third embodiment of the material gas generating device to which the present invention is applied.

第9圖為氣體擴散構件之開口部的位置之例圖。 Fig. 9 is a view showing an example of the position of the opening of the gas diffusion member.

第10圖為氣體擴散構件之開口部的位置之例圖。 Fig. 10 is a view showing an example of the position of the opening of the gas diffusion member.

101‧‧‧原料氣體產生裝置 101‧‧‧Material gas generating device

102‧‧‧固體原料 102‧‧‧ solid materials

111‧‧‧容器 111‧‧‧ Container

112‧‧‧蓋 112‧‧‧ Cover

113‧‧‧通氣管 113‧‧‧ snorkel

114、117‧‧‧閥 114, 117‧‧‧ valve

115‧‧‧氣體擴散構件 115‧‧‧ gas diffusion members

113A、115A‧‧‧開口部 113A, 115A‧‧‧ openings

116‧‧‧通氣管 116‧‧‧ snorkel

116A‧‧‧開口部 116A‧‧‧ Opening

131‧‧‧擴散體 131‧‧‧Diffuser

132‧‧‧框體 132‧‧‧ frame

Claims (4)

一種原料氣體產生裝置,係從以蓋封閉之容器內的固體原料產生原料氣體之裝置,該原料氣體產生裝置之特徵為具備:導入構件,其於前端部具有將用以運送該原料氣體之運載氣體導入該容器內的第1開口部;擴散構件,其於該原料之上方以堵塞該第1開口部之方式設置,使導入該容器內之該運載氣體擴散,並具有將經擴散之該運載氣體朝垂直向下方向噴出的第2開口部;及排出構件,其將該原料氣體與該運載氣體一起自該原料的上方排出至該容器外部。 A material gas generating device is a device for generating a material gas from a solid raw material in a container closed by a lid, the material gas generating device characterized by: an introduction member having a carrier at a front end portion for transporting the material gas a gas is introduced into the first opening in the container; a diffusion member is disposed above the material to block the first opening, and the carrier gas introduced into the container is diffused and has a carrier to be diffused a second opening that ejects the gas in a vertically downward direction; and a discharge member that discharges the raw material gas from the upper side of the raw material to the outside of the container together with the carrier gas. 如申請專利範圍第1項之原料氣體產生裝置,其中該第2開口部係配置於該容器之水平方向的大致中央。 The material gas generating device according to claim 1, wherein the second opening is disposed substantially at the center of the horizontal direction of the container. 如申請專利範圍第1項之原料氣體產生裝置,其中該擴散構件具有複數個該第2開口部,複數個該第2開口部係以該容器之水平方向的中央作為中心大致對稱地配置。 The material gas generating device according to the first aspect of the invention, wherein the diffusing member has a plurality of the second openings, and the plurality of the second openings are arranged substantially symmetrically with respect to a center in a horizontal direction of the container. 如申請專利範圍第1至3項中任一項之原料氣體產生裝置,其中該擴散構件係由外框及收容於該框內之擴散體所構成,該外框係用以包覆該第1開口部及該第2開口部以外之部分,該擴散體係以堵塞該第1開口部之方式配置。 The material gas generating device according to any one of claims 1 to 3, wherein the diffusing member is formed by an outer frame and a diffuser housed in the frame, the outer frame is for covering the first The diffusion system and the portion other than the second opening are disposed to block the first opening.
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