TW201302329A - Halogen removal device used upon processing a substrate, device for processing a substrate, and method for processing a substrate - Google Patents

Abstract

A halogen removal device 16 used upon processing a substrate is utilized for removing residual halogen on a processed substrate W. It includes an ultrasonic generator 43 that generates ultrasonic wave, and a mist supply mechanism 47 that turns water capable of dissolving halogen into mist and feeds the misty water to a processed substrate W.

Description

Halogen removal device for processing substrate, substrate to be processed, and substrate to be processed

The present invention relates to a halogen removal apparatus for processing a substrate, a substrate processing apparatus to be processed, and a substrate processing method, and more particularly to a substrate processing apparatus for processing a substrate to be processed using plasma, A processed substrate processing halogen removal device (hereinafter sometimes referred to simply as "halogen removal device") provided in a substrate processing apparatus or the like, and a processed substrate processing method using a plasma to perform processing of a substrate to be processed.

A semiconductor element such as an LSI (Large Scale Integrated Circuit) or a MOS (Metal Oxide Semiconductor) transistor, for example, etches or CVDs a semiconductor wafer (semiconductor substrate) as a substrate to be processed (Chemical) Vapor Deposition, chemical vapor deposition), sputtering, etc. For etching or CVD, sputtering, etc., there is a treatment method using plasma as its energy supply source, that is, plasma etching or plasma CVD, plasma sputtering, and the like.

Here, a configuration of a wafer processing apparatus that performs processing of a wafer as a substrate to be processed using plasma is briefly described. The wafer processing apparatus includes a plasma processing apparatus as a processing module (PM) for performing wafer processing. Plasma processing; transfer module (TM), in a very low pressure environment, such as a vacuum environment, the wafer is sent to the plasma processing device and sent from the plasma processing device; loading module (LM), adjacent transfer module Provided, in an atmospheric environment, as a wafer feed port in the wafer processing apparatus and a wafer feed port outside the wafer processing apparatus; and a vacuum preparation module (LLM), in the transfer module and the loading mold Pressure adjustment between groups. When the wafer is fed and fed to the wafer processing apparatus, the wafer is sealed in a sealed container called a front opening wafer cassette.

The pre-processed wafer enclosed in the front open wafer cassette and fed into the loading module is transported to the vacuum preparation module by a wafer transport device disposed in the loading module. After the vacuum preparation module is depressurized to a predetermined pressure, it is sent into the plasma processing apparatus by the wafer transfer device provided in the transfer module. In the plasma processing apparatus, plasma is generated using a processing gas, and plasma processing such as plasma etching treatment as described above is performed on the wafer. After the wafer is subjected to plasma processing, the wafer is transferred from the plasma processing apparatus to the transfer module by the wafer transfer device. Thereafter, the wafer is sent out to the loading module in the atmospheric pressure environment by the vacuum preparation module, and sent out to the outside of the wafer processing apparatus. Plasma processing for the wafer is performed in this manner.

Here, in terms of wafers, since high cleaning property is required, the cleaning performed is performed by removing residues such as reaction products generated by etching in the processing module with high standards. A technique of such a wafer cleaning is disclosed in Japanese Laid-Open Patent Publication No. SHO 64-43384 (Patent Document 1).

[Practical Technical Literature] [Patent Literature]

Patent Document 1: Japanese Laid-Open Patent Publication No. SHO 64-43384

In the plasma processing apparatus as a processing module, plasma processing is performed under various processing conditions in accordance with characteristics required for processing contents or wafers. Here, in the plasma processing apparatus, a halogen gas such as a corrosive HBr gas may be used during the etching treatment. When the etching treatment is performed using such a halogen gas, the following problems may occur.

First, at the time of plasma treatment, Br in the HBr gas used for the etching treatment reacts with the material of the ruthenium substrate to produce, for example, SiBr ₄ . When the reaction product, ie, SiBr _{4 ,} remains in the processed wafer, and the wafer is sent out from the vacuum environment to the atmospheric pressure environment, that is, when the transfer module is sent out to the loading module, it is present in the loading module. The trace amount of moisture (H ₂ O) in the atmosphere reacts to produce HBr. As a result, in the wafer transfer apparatus or the like in the loading module, there is a possibility that corrosion of the metal portion occurs due to the generated HBr. In particular, when the etching process corresponding to the miniaturization of the wiring between recent years is performed, the interval between the structures formed by the etching process is also shortened. Therefore, it is possible that the reaction product generated by the etching treatment cannot be completely discharged from the structure during the etching process.

Further, in the loading module, when ammonia (NH ₃ ) generated by the reaction of etching in the atmosphere or the tantalum nitride film is present, it reacts with HBr generated in the loading module. It is possible that the reaction product produced by the reaction becomes powdery NH ₄ Br and precipitates in the loading module. Such a solid powdery reaction product may hinder the optical sensor performing wafer positioning and the like from detecting the correct position in the wafer transport position in the loading module, thereby generating abnormal positioning. Further, the action of the solid reaction product may cause malfunction of the movable portion of the wafer transfer device. That is, there is a possibility that a wafer conveyance failure or the like in the wafer transfer apparatus may occur.

Furthermore, in the front open wafer cassette, the pre-processed wafer and the processed wafer may be mixed, but in such a narrow environment, airflow is disturbed, and NH ₃ in the atmosphere is generated as described above. the HBr react, to produce solid NH ₄ Br. When such a solid reaction product adheres to the wafer before the treatment, there is a possibility of causing so-called cross contamination. That is, the solid reaction product may hinder the etching treatment. If this is done, the formation of the photoresist layer is hindered, and the plasma treatment cannot be performed to have a desired shape.

Further, in the case of such a solid reaction product or corrosion, since it is hardly observed in a vacuum environment such as a transfer module, it is considered that the vacuum sublimation of SiBr ₄ hardly occurs.

Here, in the vacuum preparation module for pressure adjustment and the front opening wafer cassette, it is preferable to reduce the concentration of the integrated acid, that is, the so-called integrated acid concentration as much as possible. This is to suppress the generation of contamination or reaction by-products in the respective modules due to an acid such as H in the HBr gas as the halogen gas. Especially in the front-opening wafer cassette, when the integrated acid concentration is high, specifically, when the integrated acid of 45 ppb (part per billion) or more is present, the above-mentioned cross-contamination may occur in the front opening wafer cassette. Therefore, in the vacuum preparation module and the front opening wafer cassette, specifically, the integrated acid concentration is preferably 10 ppb or less. That is, it is desirable to make the residual halogen very small.

In this case, for example, there is a method in which a radical generating device for generating a radical is provided in the transfer module, and the plasma is treated in the plasma processing device by radical treatment, and remains in the wafer during wafer processing. Round halogen removal. However, the free radical generating device is generally expensive, which is the main cause of the increase in the cost of the entire device, and it is not suitable to use such a method.

An object of the present invention is to provide a halogen removal apparatus for processing a substrate to be processed which can effectively remove halogen remaining on a substrate to be processed.

Another object of the invention is to provide a substrate processing apparatus that can effectively reduce contamination in a device.

Still another object of the present invention is to provide a method of processing a substrate to be processed which can reduce contamination in the apparatus.

Still another object of the present invention is to provide a substrate processing apparatus to be processed which can effectively reduce contamination in a device and improve productivity.

The halogen removal device for processing a substrate to be processed according to the present invention is a halogen removal device for processing a substrate to be processed which removes halogen remaining on a substrate to be processed, and includes a control means for controlling a droplet of a liquid capable of dissolving halogen Particle size reduction; And a supply mechanism that supplies a liquid capable of dissolving halogen to the substrate to be processed.

According to the halogen removal apparatus for processing a substrate to be processed, since the particle size of the droplet of the liquid capable of dissolving the halogen is reduced and supplied to the substrate to be processed, even a fine groove formed on the surface of the substrate to be processed by etching or the like is formed. The deep part of the tank also allows liquids that dissolve halogens to enter easily. Thereby, the removal of halogen can be performed efficiently. Moreover, it is difficult to form a film of a liquid capable of dissolving a halogen, and it is difficult to form on the surface of the substrate to be processed to be processed. The substrate to be processed referred to herein includes the above-described wafer or glass substrate.

Preferably, the liquid capable of dissolving the halogen is water; the control mechanism comprises: a superheated steam generating device that heats the water to generate water vapor and then heats the generated steam to generate superheated steam; the supply mechanism is to be superheated steam The superheated steam generated by the generating device is supplied to the substrate to be processed.

More preferably, the superheated steam generating device comprises: a mounting table on which the substrate to be processed is placed; a water storage container for storing water; and a pipeline for upper portion of the water storage container and an upper portion of the mounting table The first heating mechanism heats the water in the water storage container as water vapor, and the second heating mechanism heats the water vapor in the pipeline as superheated water vapor.

Further, the control means may be configured to include an ultrasonic generating device for generating ultrasonic waves, and control the ultrasonic generating device so that the liquid capable of dissolving the halogen becomes a mist to reduce the particle diameter; and the supply means becomes a mist. A liquid capable of dissolving halogen is supplied to the substrate to be processed.

Preferably, the ultrasonic generating device comprises: a storage container for storing a liquid capable of dissolving halogen; and an ultrasonic oscillator configurable inside the storage container.

More preferably: the supply mechanism comprises: a mounting table on which the substrate to be processed is placed And a pipe having a discharge port capable of supplying a mist-soluble liquid capable of dissolving halogen from the upper side of the substrate to be processed, and connecting the upper side portion of the storage container to the upper side portion of the mounting table.

As a more preferred embodiment, the liquid capable of dissolving halogen contains water.

Further, it may be configured to include a temperature adjustment mechanism that adjusts the substrate to be processed to a predetermined temperature.

More preferably, the recovery means includes a liquid capable of dissolving halogen supplied from the supply means, and a withdrawing means for extracting the halogen from the halogen-soluble liquid recovered by the recovery means.

In another aspect of the present invention, a processed substrate processing apparatus includes: a plasma processing apparatus that performs plasma processing on a substrate to be processed; and a halogen removal apparatus for processing the substrate to be processed, and removes residues remaining after the plasma treatment The halogen for the substrate to be processed; the halogen removal device for processing the substrate to be processed includes: a control mechanism that controls to reduce the particle size of the droplet of the liquid capable of dissolving the halogen; and a supply mechanism that supplies the liquid capable of dissolving the halogen to the Process the substrate.

In still another aspect of the present invention, a processed substrate processing method is a processed substrate processing method for processing a substrate to be processed, comprising: a plasma processing step of performing plasma processing on the processed substrate using the processing gas; The supply step is controlled after the plasma treatment step so that the particle size of the liquid droplet capable of dissolving the halogen is reduced, and the liquid capable of dissolving the halogen is supplied to the substrate to be processed.

In still another aspect of the present invention, a substrate processing apparatus to be processed is a substrate processing apparatus for processing a substrate to be processed, comprising: a plasma processing apparatus for performing plasma processing on the substrate to be processed; The group is adjacent to the plasma processing device, and can be made into a vacuum atmosphere inside, and has a transportation path to the substrate to be processed of the plasma processing device; the loading module is disposed adjacent to the transfer module, and can be disposed therein. The part is an atmospheric atmosphere, which is used as a feeding and discharging port for the substrate to be processed before and after the plasma treatment; the vacuum preparation module is disposed in the transfer module, between the transfer module and the loading module, by using the inside thereof The gas is supplied and discharged to perform pressure adjustment; and the halogen removing device removes halogen remaining on the substrate to be processed after the plasma treatment. The halogen removing device includes: a control mechanism that controls to reduce a particle diameter of a liquid droplet that can dissolve the halogen; and a supply mechanism that supplies the liquid capable of dissolving the halogen whose particle diameter is reduced by the control mechanism to the substrate to be processed . The supply mechanism supplies a liquid capable of dissolving halogen which is reduced in particle size by the control means to the vacuum preparation module during pressure adjustment.

Such a substrate processing apparatus can effectively reduce contamination in the apparatus and improve productivity.

Further, the liquid capable of dissolving the halogen may be water; and the control means may include: a superheated steam generating device that heats the water to generate water vapor and then heats the generated steam to generate superheated steam; the supply mechanism is to be The superheated water vapor generated by the superheated steam generating device is mixed with the pressure adjusting gas and supplied to the vacuum preparation module.

Further, the control means may be configured to include an ultrasonic generating device for generating ultrasonic waves, and control the ultrasonic generating device so that the liquid capable of dissolving the halogen becomes a mist to reduce the particle diameter; and the supply means becomes a mist. The halogen-dissolving liquid is mixed with the pressure-adjusting gas and supplied to the vacuum preparation module.

In still another aspect of the present invention, a substrate processing apparatus to be processed is a substrate processing apparatus for processing a substrate to be processed, comprising: a plasma processing apparatus for performing plasma processing on the substrate to be processed; The set, adjacent to the plasma processing device, can be made to have a vacuum atmosphere inside, and has a transport path to the processed substrate of the plasma processing device; the loading module is disposed adjacent to the transfer module to make the interior atmosphere The ambient atmosphere is used as the feeding and discharging port of the processed substrate before and after the plasma processing; the first and second vacuum preparing modules are disposed in the transfer module between the transfer module and the loading module by The inside of the gas is supplied and discharged to perform pressure adjustment, and the halogen removing device removes halogen remaining on the substrate to be processed after the plasma treatment. The halogen removal device comprises: a control mechanism for controlling to dissolve the halogen The particle size of the droplet of the liquid is reduced; and the supply means supplies the liquid capable of dissolving the halogen whose particle diameter is reduced by the control means to the substrate to be processed. The supply mechanism supplies a liquid capable of dissolving halogen which is reduced in particle size by the control means to the first vacuum reserve module during pressure adjustment.

Such a substrate processing apparatus can more effectively reduce contamination inside the apparatus and improve productivity.

According to the halogen removal apparatus for processing a substrate to be processed, since the particle size of the droplet of the liquid capable of dissolving the halogen is reduced and supplied to the substrate to be processed, even a fine groove formed on the surface of the substrate to be processed by etching or the like is formed. The deep part of the tank also allows liquids that dissolve halogens to enter easily. Thereby, the removal of halogen can be performed efficiently. Moreover, it is difficult to form a film of a liquid capable of dissolving a halogen, and it is difficult to form on the surface of the substrate to be processed to be processed.

Moreover, according to the substrate processing apparatus to be processed and the substrate processing method to be processed, the halogen remaining on the substrate to be processed during the plasma processing can be effectively removed, so that the contamination in the substrate processing apparatus to be processed can be reduced.

Moreover, according to such a substrate processing apparatus to be processed, contamination in the apparatus can be effectively alleviated, and productivity can be improved.

Embodiments of the present invention will be described below with reference to the drawings. First, a configuration of a substrate processing apparatus to be processed containing a halogen removing device according to an embodiment of the present invention will be described. 1 is a schematic cross-sectional view showing a configuration of a wafer processing apparatus as a substrate processing apparatus including a halogen removing apparatus according to an embodiment of the present invention.

Referring to Fig. 1, a wafer processing apparatus 11 as a substrate processing apparatus to be processed includes two plasma processing apparatuses 12a and 12b as a processing module (PM: Process Module). And the adjacent setting; the transfer module (TM: Transfer Module) 13 in the vacuum atmosphere is disposed adjacent to the plasma processing device 12a, 12b; the loading module (LM: Load Module) 14 in the atmospheric atmosphere, adjacent to the transfer mode The group 13 is provided as a delivery port for the pre-processed wafer or a processed outlet for the wafer; and two vacuum preparation modules 15a and 15b for pressure adjustment between the transfer module 13 and the loading module 14. The plasma processing apparatuses 12a, 12b can individually perform plasma processing. Further, the two vacuum reserve modules 15a and 15b can also perform pressure adjustment of the wafers fed into the inside, and the like. Further, representative positions of the wafers in the wafer processing apparatus 11 are shown by broken lines.

Here, first, the configuration of the plasma processing apparatus 12a provided in the wafer processing apparatus 11 will be briefly described. Fig. 2 is a schematic cross-sectional view showing the configuration of one of the plasma processing apparatuses 12a provided in the wafer processing apparatus 11 shown in Fig. 1. The other plasma processing apparatus 12b has the same configuration as that of the one plasma processing apparatus 12a, and therefore its description will be omitted.

Referring to Figures 1 and 2, the plasma processing apparatus 12a is a microwave plasma processing apparatus using microwaves as a plasma source. The plasma processing apparatus 12a includes a processing container 21 having a processing space for plasma-treating the substrate W to be processed therein, a gas supply unit 22 for supplying a gas for plasma treatment in the processing container 21, and the like; Provided in the processing container 21, the substrate W to be processed is held thereon; the microwave generator 24 is disposed outside the processing container 21 to generate microwaves for plasma excitation; the waveguide 25 and the coaxial waveguide 26 The microwave generated by the microwave generator 24 is introduced into the processing container 21; the dielectric plate 27 is coupled to the lower end portion of the coaxial waveguide 26, and propagates the microwave introduced by the coaxial waveguide 26 in the radial direction; The hole antenna plate 29 is disposed on the lower side of the dielectric plate 27, and has a plurality of slots (long holes) 28 for radiating the microwaves propagated by the dielectric plate 27; the dielectric window 30 is disposed on the slot antenna plate On the lower side of the 29, the microwave radiated by the slot 28 is transmitted in the radial direction and transmitted through the processing container 21, and a control unit (not shown) controls the entire plasma processing apparatus 12a. The gas supply unit 22 includes a center gas supply unit 32 and supplies gas to the center of the substrate W to be processed. The gas supply port 31 and the external air supply unit 35 are formed of an annular hollow member 33 and have a gas supply port 34 for supplying a gas to the inside in the radial direction. The control unit controls the flow rate in the gas supply unit 22, the pressure in the processing container 21, and the like to perform processing conditions for plasma treatment of the substrate W to be processed. Further, from the viewpoint of easy understanding, the opening shape of the slot 28 is schematically shown in FIG.

The slot antenna plate 29 is formed by a first slot that is longer in one direction and a second slot that is longer in a direction perpendicular to the first slot. The pair of slots are provided with a plurality of pairs. The microwave plasma supplied for processing in the plasma processing apparatus 12a is produced by a radial slot antenna (RLSA: Radial Line Slot Antenna) including a slot antenna plate 29 and a dielectric window 30. According to the plasma processing apparatus 12a, plasma processing can be performed at a relatively low electron temperature and a relatively high electron density, so that plasma damage to the substrate W to be processed during processing can be suppressed.

Next, the configuration of the transfer module 13 will be described. The transfer module 13 includes: a halogen removing device 16 disposed adjacent to a position different from the two plasma processing devices 12a, 12b for performing removal of halogen remaining on the wafer; and a wafer transfer device 17a The transfer module 13 has an arm (not shown) for feeding in or out of the wafer, or detecting a position in the wafer conveyance, for the plasma processing apparatuses 12a and 12b. Optical sensor (not shown). The wafer transfer device 17a is schematically shown by a dashed line.

Next, the configuration of the loading module 14 will be described. The loading module 14 includes: a purging storage unit (PS: Purge Storage) 18 for cooling or degassing the wafers; and two loading ports (LP: Load Ports) 19a and 19b disposed at the air purifying storage unit 18 The position is different from the transfer port of the wafer processing apparatus 11 from the processed wafer, or the wafer to be processed is introduced into the wafer processing apparatus 11; and the wafer transfer apparatus 17b has the above The wafer transfer device 17a has substantially the same configuration. The wafer is stored in a closed container called a front opening wafer cassette (FOUP: Front Opening Unified Pod) and stored in the loading cassettes 19a and 19b. 2 loading cassettes 19a, 19b, It is used in order according to the timing of processing.

The two pressure-preparing modules (LLM: Load Lock Modules) 15a and 15b for adjusting the pressure are disposed in the transfer module 13 at a position close to the loading module 14 for adjusting the transfer module 13 and the loading module. The temperature environment or pressure environment of 14 wafers.

Next, a configuration of a halogen removing device that removes residual halogen from the processed wafer will be described. Fig. 3 is a schematic cross-sectional view showing the configuration of a halogen removing device 16 provided in the wafer processing apparatus 11 shown in Fig. 1.

Referring to Fig. 3, the halogen removing device 16 includes a control mechanism 40 that controls to reduce the particle diameter of droplets of pure water (H ₂ O) as a liquid capable of dissolving halogen; and a supply mechanism 47 that is capable of dissolving halogen Liquid is supplied to the wafer. The control mechanism 40 has an ultrasonic wave generating device 43 including a storage container 41 that stores pure water as a liquid capable of dissolving halogen, and an ultrasonic oscillator 42 disposed in the storage container 41. The ultrasonic generating device 43 vibrates the ultrasonic oscillator 42 disposed in the pure water. By the generated ultrasonic wave, the particle diameter of the droplet of pure water is reduced. Specifically, the water stored in the storage container 41 is made into a mist.

The supply mechanism 47 includes a processing chamber 44 in which the wafer W can be housed, a mounting table 45 on which the wafer W can be placed, and an annular line 46 continuous from the upper side of the storage container 41. To the upper side of the processing chamber 44, pure water that is in a mist form is supplied to the wafer W. In the storage container 41, the pure water is misted by the ultrasonic generating device 43. The mist-like water is sequentially moved in the direction of the arrow 46 in the direction indicated by the arrow III in Fig. 3, and supplied to the processing chamber 44 side. In the processing chamber 44, it is supplied in a shower form from the upper side of the wafer W placed on the mounting table 45. Further, a temperature adjuster (not shown) as a temperature adjustment mechanism such as a heater or a refrigerant is provided inside the mounting table 45, and the wafer W placed on the mounting table 45 can be set to a predetermined temperature.

According to this halogen removing device 16, it is possible to dissolve halogen by ultrasonic waves. Since the liquid is supplied to the wafer in a mist form, that is, a so-called dry mist, the particle diameter of the liquid droplet which can dissolve the halogen can be reduced to 10 μm or less. In this way, it is possible to easily allow moisture to enter fine grooves or holes formed on the wafer surface by etching. Further, since the film of the liquid capable of dissolving the halogen can be formed on the surface of the wafer to be processed, it is impossible to form a water mark. Further, in such a configuration, the treatment can be carried out at a relatively low temperature, and the temperature management of the halogen removal can be appropriately carried out, and the treatment can be carried out at a preferred temperature suitable for halogen removal. Thereby, the removal of halogen can be performed efficiently.

Further, the halogen removing device 16 may have a recovery mechanism for recovering the mist-like water supplied from the supply mechanism 47, and includes a cooling supplement 48 as a recovery mechanism, and filters 49a and 49b as filter mechanisms. The pure water recovered by the cooling supplement 48 is filtered; and the gate valve 50 is disposed between the cooling supplement 48 and the filter 49b to adjust the flow rate. The cooling supplement 48 is recovered by supplementing the water after the halogen removal treatment by a temperature difference. Specifically, a Peltier element may be provided to raise the temperature of the mounting table 45 and cool the cooling supplement 48. The recovered water contains halogen, so it is filtered by the filters 49a, 49b to remove the halogen from the water. The water from which the halogen is removed by the filter 49b through the gate valve 50 is discharged to the outside of the halogen removing device 16. At this time, since the halogen is removed by the filter 49b, there is no possibility of contamination of the piping or the like in the subsequent steps. Specifically, even if a halogen of about 10 ppm is contained in the previous stage of the filter 49b, the halogen can be removed to about 1 ppb by the filter 49a. Further, the pure water added by the cooling supplement 48 may be filtered by the filter 49a to remove the halogen, and then returned to the storage container 41 again. In this way, the halogen can be effectively removed while circulating pure water.

That is, the wafer processing apparatus 11 according to the embodiment of the present invention includes the plasma processing apparatuses 12a and 12b, which performs plasma processing on the wafer, and the halogen removal apparatus 16 for wafer processing, and removes the residue after the plasma treatment. Halogen on the wafer. The wafer processing halogen removing device 16 includes a control unit 40 including an ultrasonic generating device 43 for generating ultrasonic waves, and is controlled so that the droplet size of the pure water which is a liquid capable of dissolving the halogen is reduced. And the supply mechanism 47, using the ultrasonic generating device 43, The liquid that dissolves the halogen is made into a mist, and the mist-soluble liquid capable of dissolving the halogen is supplied to the wafer.

Next, the flow of the wafer processing after the plasma processing in the wafer processing apparatus 11 will be briefly described. Fig. 4 is a flow chart showing a representative procedure when wafer processing is performed using a wafer processing apparatus according to an embodiment of the present invention.

Referring to Fig. 1 to Fig. 4, in the plasma processing apparatus 12a, plasma processing such as etching is performed on the wafer (Fig. 4(A)). After wafer plasma processing apparatus 12a are performed by plasma treatment, the wafer as indicated by arrow A ₁ 1, sent to the external plasma processing apparatus 12a. And it is sent to the halogen removal device 16 via the transfer module 13. At this time, it is performed using the wafer transfer apparatus 17a. The remaining halogen is removed from the wafer subjected to the plasma treatment (Fig. 4(B)).

Here, the removal of the halogen by the halogen removing device 16 will be described. First, the processed wafer W is placed on the mounting table 45. Thereafter, in the temperature adjuster of the mounting table 45, the temperature of the wafer W is adjusted to a temperature suitable for processing. Next, ultrasonic waves are generated in the ultrasonic generating device 43. The water that dissolves the halogen is foggy (haze-like).

The mist-like water is supplied to the wafer W on the mounting table 45. The amount, time, and the like of the supply may be arbitrarily set depending on the content of the plasma treatment in the plasma processing apparatus 12a or the required degree of cleanliness. In this manner, the halogen in the plasma-processed wafer W is removed.

After the halogen is removed from the wafer, the wafer is discharged to the outside of the halogen removing device 16. Thereafter, via transfer module 13, as indicated by arrow A ₂ in FIG. 1, a vacuum prechamber into module 15a (FIG. 4 (C)). Here, the wafer is cooled while the pressure of the wafer is adjusted. The cooling of the wafer, specifically, is carried out by supplying N ₂ gas of a predetermined temperature for about 30 seconds.

Thereafter, the module 14 via the load, as shown by arrow A ₃ in FIG. 1, transported to the storage unit 18 the purging, cooling and degassing more (FIG. 4 (D)) in the storage unit 18 purging. Degassing is carried out by performing a downflow of air at a predetermined temperature for 3 minutes. Alternatively, this step can also be performed by the vacuum preparation module 15a. Further, it may be omitted depending on the object to be processed.

Thereafter, the module 14 via the load, as indicated by arrow A ₄ 1, transported to the load port 19a (FIG. 4 (E)). Finally, the processed wafer is sent out from the loading cassette 19a.

That is, the wafer processing method of the processed substrate processing method according to an embodiment of the present invention is a wafer processing method for processing a wafer, comprising: a plasma processing step of performing plasma processing on the wafer using the processing gas; And a supply step of, after the plasma treatment step, using an ultrasonic generating device that generates ultrasonic waves, so that the liquid capable of dissolving the halogen becomes a mist to reduce the particle size of the liquid droplets of the liquid capable of dissolving the halogen, and becomes a mist. A liquid capable of dissolving halogen is supplied to the wafer.

Looking at the above, with this configuration, the removal of halogen can be effectively performed. Moreover, according to the wafer processing apparatus 11, the halogen remaining in the wafer can be effectively removed, so that contamination in the wafer processing apparatus 11 can be effectively alleviated. Moreover, according to such a wafer processing method, the halogen remaining on the wafer can be effectively reduced, so that contamination of the device can be reduced. Specifically, in the step after the halogen removing device, particularly in the step of performing the treatment under atmospheric pressure, the influence of the halogen remaining on the wafer can be greatly reduced. In other words, in the etching step of the residual halogen and the tantalum nitride film, the generation of NH ₄ Br which is a reaction product of NH ₃ and halogen which is a by-product of the reaction can be suppressed.

Here, the mechanism of halogen removal is examined. First, a method is considered in which the halogen of the wafer is removed by using pure water as a general general liquid, pouring the wafer with pure water, or cleaning the wafer by dipping or the like. However, in this case, it is possible that the cleaning mechanism becomes enormous and the cost is increased. Also, even in high humidity environments, when the temperature of the wafer is low At the water vapor temperature, condensation is generated. Thus, the surface state of the wafer must be controlled in accordance with the temperature of the wafer, and the control becomes complicated.

Further, as a method of removing the halogen, if high-temperature steam is used, it is necessary to use high-temperature steam, for example, it is necessary to boil the pure water. The water vapor thus obtained cannot control the particle size of the water vapor. As shown in FIG. 5, since the water vapor 51 has a large particle diameter, it is difficult to sufficiently supply water molecules to fine grooves or holes formed on the wafer surface. Further, the water film 53 is easily formed on the surface of the wafer 52. Thus, when the water-like water evaporates, the halogen residue 54 remains directly on the wafer 52. Here, if the film thickness of the water film is to be controlled, temperature control of the wafer at a high temperature must be performed, and the processing becomes complicated. Furthermore, the device configuration has also become relatively expensive.

On the other hand, in the configuration shown in FIG. 3 described above, when the water is made into a mist by the ultrasonic waves, as shown in FIG. 6, the water droplets 55 can be made to have a relatively small particle diameter of 10 μm or less. On the other hand, the water droplets 55 having a relatively small particle diameter can make the water film less likely to be generated, so that the possibility of evaporation of water remaining on the surface of the wafer 56 to cause halogen residue can be reduced. Further, since the particle diameter of the water droplet 55 is small, even if the aspect ratio of the groove formed on the surface of the wafer 56 is high, water molecules easily enter the bottom portion of the groove, and the residual of the halogen residue 54 at the bottom portion of the groove can be reduced. The possibility. Moreover, according to such a configuration, since the processing can be performed at a relatively low temperature, temperature control of the wafer or the like can be facilitated. Moreover, the device configuration has also become relatively inexpensive.

In the above-described embodiment, water is used as the halogen-removing liquid capable of dissolving halogen. However, the present invention is not limited thereto. For example, an alcohol, an ether, or hydrogen water may be used.

Further, in the above embodiment, the control means uses ultrasonic waves to reduce the particle diameter of the liquid droplets of the liquid capable of dissolving the halogen. However, the present invention is not limited thereto, and water may be used as the liquid capable of dissolving the halogen. The water becomes superheated steam to reduce the particle size.

Next, a halogen-containing removing device according to another embodiment of the present invention will be described. The structure of the wafer processing apparatus of the substrate processing apparatus to be processed. FIG. 7 is a schematic cross-sectional view showing a configuration of a halogen removing device provided in a wafer processing apparatus of a substrate processing apparatus according to another embodiment of the present invention, and corresponds to FIG. 3. In the wafer processing apparatus according to another embodiment of the present invention shown in FIG. 1, the halogen removal apparatus 16 shown in FIG. 3 is replaced by the wafer processing apparatus shown in FIG. Halogen removal device.

Referring to Fig. 7, a halogen removing device 61 provided in a wafer processing apparatus according to another embodiment of the present invention includes a control unit 63 having a superheated water which heats pure water which is a liquid capable of dissolving halogen to generate superheated steam. The steam generating device 62 is controlled so that pure water becomes superheated steam to reduce the particle size of the droplets, and the supply mechanism 64 supplies superheated steam to the wafer.

The superheated steam generating device 62 includes: a water storage container 65 that can store pure water; a first heating mechanism 66 that heats pure water in the water storage container 65 to generate water vapor; and a second heating mechanism 67 that heats the generated water Vapor to produce superheated steam. Further, the supply mechanism 64 includes a processing chamber 68 in which the wafer W can be housed, a mounting table 69 on which the wafer W can be placed, and a conduit 70 that can be supplied from the upper side of the wafer W. The pure water discharge port of the superheated steam is connected to the upper side portion of the water storage container 65 and the upper side portion of the mounting table 69.

Specifically, the first heating means 66 is, for example, a first heater provided on the lower side of the water storage container 65, and is heated by the first heater so that the pure water in the water storage container 65 becomes water vapor. Specifically, the second heating means 67 is, for example, a second heater that is disposed on the downstream side of the line 70, that is, on the side closer to the mounting table 69, and that heats the water vapor passing through the line 70 by the line 70. The generated steam is heated to 250 ° C or higher by a second heater to serve as superheated steam. Further, an exhaust hole 71 for exhausting in the processing chamber 68 is also provided.

In the water storage container 65, pure water is heated by the first heating mechanism 66 to generate Water vapor 72. The water vapor 72 generated here is saturated steam, so-called wet water vapor, and has a relatively large particle diameter as shown in Fig. 5 . The generated water vapor 72 is sequentially moved in the direction of the line 70 to the direction indicated by the arrow VII in Fig. 7. On the other hand, the second heating means 67 disposed on the downstream side of the line 70 is heated again to generate superheated steam 73, which is called dry water vapor. At this time, it is not necessary to apply pressure in order to supply the water vapor 72 to the second heating mechanism 67. The superheated water vapor 73 thus produced has a particle size much smaller than that of the water vapor 72, and is considered to be a particle size of a plurality of water molecules and water molecules. The generated superheated steam 73 is supplied to the processing chamber 68 side. In the processing chamber 68, the upper side of the wafer W placed on the mounting table 69 is sprayed. In this manner, the superheated steam 73 is supplied to the wafer W.

According to this configuration, since pure water which is a liquid capable of dissolving halogen is heated, water vapor is first generated, and the generated water vapor is heated to be supplied to the wafer as superheated water having a smaller particle diameter, so that even etching is performed. The deep portion of the fine groove formed on the wafer surface can also allow the superheated steam to easily enter. Thereby, the removal of halogen can be performed efficiently. Moreover, it is difficult to form a film which is a liquid which can dissolve a halogen liquid, and it is hard to form on the surface of the wafer to be processed.

At this time, the generated superheated steam has a large heat capacity and is thermally conducted by radiation or condensation in addition to convection, so that the wafer W can be heated for a short period of time. Therefore, as in the halogen removing device shown in FIG. 3 described above, the heater may not be provided inside the mounting table. Further, when superheated steam is generated, no pressure is required, so that the system of the halogen removing device 61 can be simplified, and the structure can be made inexpensive.

Further, in this case, since the amount of water around the unit volume can be greatly reduced, for example, an existing vacuum pump (not shown) can be used to connect the exhaust hole 71 to exhaust the inside of the processing chamber 68, as shown in the above figure. The halogen removal device shown in Fig. 3 does not need to be provided with a supplement or the like.

Further, at this time, in addition to pure water, hydrogen water or the like may be used.

Further, at this time, in the processing chamber 68, such treatment can be performed with almost no oxygen present. Thereby, the possibility of wafer oxidation during processing can be reduced.

That is, the wafer processing apparatus of the substrate processing apparatus according to another embodiment of the present invention includes: plasma processing apparatuses 12a and 12b, plasma processing of the wafer, and halogen removal apparatus 61 for wafer processing, The halogen remaining on the wafer after the plasma treatment is removed. The wafer processing halogen removing device 61 includes a control unit 63 that controls and controls the superheated water vapor generating device 62 that generates pure water as a liquid capable of dissolving a halogen to generate superheated water, so that the pure water becomes superheated water. The vapor reduces the particle size of the droplets; and the supply mechanism 64 supplies the superheated steam to the wafer.

That is, the wafer processing method of the processed substrate processing method according to another embodiment of the present invention is a wafer processing method for processing a wafer, comprising: a plasma processing step of plasma processing the wafer using the processing gas And a supply step of supplying the purified water to the superheated water vapor to reduce the particle diameter of the pure water droplets as the liquid capable of dissolving the halogen, and supplying the wafer to the wafer.

Further, in the above embodiment, the second heating means is provided on the downstream side of the pipe, and the superheated steam is generated in the region close to the wafer W. However, the present invention is not limited thereto, and may be applied to other portions such as the upstream of the pipe. A second heating mechanism is provided near the side or midstream, in which superheated steam is generated. Further, a second heating means is provided on the upper side of the water storage container, and superheated steam may be generated in this area.

Further, in the above-described embodiment, the water having a reduced particle size is supplied from the upper side to the wafer placed on the mounting table. However, the present invention is not limited thereto, and the water having a reduced particle diameter may be in a mist state. Next, the wafer is moved to expose it to the misty water for supply. That is, a halogen removing device is provided in the transfer module 13, and when the processed wafer is transported from the plasma processing devices 12a and 12b to the vacuum preparation modules 15a and 15b by the wafer transfer device 17a, halogen removal can be performed. . Furthermore, the wafer is raised In the erect state, it is also possible to supply misty water. Furthermore, it is also possible to supply a mist of water to a plurality of wafers.

Further, in the above embodiment, the processing chamber having the halogen removing device shown in Fig. 3 or Fig. 7 may be coated with PTFE (polytetrafluoroethylene) or the like. In this way, the durability of the processing chamber can be improved.

Further, in the above embodiment, the halogen gas is described by taking HBr as an example. However, the present invention is not limited thereto, and may be, for example, a fluorine-containing gas or a chlorine-containing gas.

Further, in the above embodiment, two plasma processing apparatuses, two vacuum preparation modules, and two loading cassettes are provided in the wafer processing apparatus, but the present invention is not limited thereto, and two or more of them may be provided separately. One can be set.

Here, in the vacuum preparation module that performs pressure adjustment between the transfer module and the load module by supplying and discharging the gas inside, the configuration in which the halogen is removed during pressure adjustment may be employed.

Fig. 8 is a schematic view showing the configuration of the substrate processing apparatus to be processed in this case. Referring to Fig. 8, a substrate processing apparatus according to still another embodiment of the present invention performs processing of a substrate to be processed.

The substrate processing apparatus 81 to be processed includes two plasma processing apparatuses 82a and 82b which are disposed adjacent to each other as a processing module, and a transfer module 83 in a vacuum atmosphere, which is disposed adjacent to the plasma processing apparatuses 82a and 82b; atmospheric atmosphere The lower loading module 84 is disposed adjacent to the transfer module 83 and serves as a feed port for the substrate to be processed before processing or a feed port for the substrate to be processed after processing; and two vacuum reserve modules 85a and 85b in the transfer module 83 Pressure adjustment and the like are performed between the loading modules 84. Further, the substrate processing apparatus 81 to be processed includes the substrate conveyance apparatuses 87a and 87b to be processed, the purge storage unit 88, and the two loading cassettes 89a and 89b.

The plasma processing apparatuses 82a and 82b can individually perform plasma processing. Further, the two vacuum reserve modules 85a and 85b may perform pressure adjustment or the like of the substrate to be processed which is fed into the inside. In addition, the substrate to be processed in the substrate processing apparatus 81 to be processed is arranged Representative locations are shown in dotted lines.

Further, the substrate processing apparatus 81 to be processed includes a halogen removing device 86a that removes halogen which remains on the substrate to be processed after the plasma treatment. The basic device other than the vacuum preparation module 85a and the halogen removal device 86a, that is, the plasma processing devices 82a and 82b, the transfer module 83, the loading module 84, and the other vacuum preparation module 85b. The same as in the wafer processing apparatus 11 shown in FIG. 1 and the like described above, the description thereof will be omitted.

The vacuum preparation module 85a of one of the vacuum preparation modules 85a is provided with a halogen removal device 86a that removes halogen which remains on the substrate to be processed after the plasma treatment. The halogen removing device 86a includes a control mechanism that controls to reduce the particle diameter of the water droplets as a liquid capable of dissolving the halogen, and a supply mechanism that supplies the water whose particle diameter is reduced by the control mechanism to the processed Substrate. The supply mechanism supplies the water whose particle diameter is reduced by the control means to the vacuum preparation module 85a at the time of pressure adjustment.

Here, the configuration of the halogen removing device 86a and the vacuum reserve module 85a will be described. The halogen removing device 86a, although not shown, has a control mechanism as a superheated steam generating device 86b including the water storage container 65, the first heating mechanism 66, and the second heating mechanism 67 shown in Fig. 7, and a supply mechanism. A line 86c is included. The line 86c shown in Fig. 8 corresponds to the line 70 shown in Fig. 7. Further, the container constituting the vacuum reserve module 85a corresponds to the processing chamber 68 having the vent hole 71 of FIG. On the other hand, the superheated water vapor generated by the water in the water storage container 65 using the first heating means 66 or the like is supplied to the vacuum preparation module 85a via the line 86c. Specifically, at the time of boosting, that is, when the substrate to be processed after the plasma treatment is pressurized from a vacuum atmosphere to an atmospheric atmosphere, halogen removal is performed at the same time. At this time, in the vacuum reserve module 85a, for example, N ₂ gas as a gas for pressure adjustment is supplied into the vacuum reserve module 85a, and the pressure in the vacuum reserve module 85a is boosted from the vacuum atmosphere. In the atmosphere of the atmosphere, the N ₂ gas supplied during the pressure increase is supplied with superheated steam, and the halogen is dissolved in the superheated steam to be exhausted, and the halogen is removed as the pressure is increased.

Next, a flow of processing when the substrate to be processed 81 is processed by the substrate processing apparatus 81 to be processed will be described.

After the plasma processing apparatus 82a, the substrate to be processed was plasma treatment, the substrate to be processed as shown by arrow B in FIG. 8, conveyed to a preliminary vacuum system module 85a shown in _FIG. The substrate to be processed which has been subjected to the plasma treatment is sealed in the vacuum preparation module 85a. Thereafter, the vacuum preheating module 85a is pressurized from the vacuum atmosphere to the atmospheric atmosphere. At this time, as described above, the halogen removal device 86a is used to supply the N ₂ gas containing the superheated steam into the vacuum preparation module 85a. Thus, the halogen is removed by dissolving it in the superheated steam. At this time, the N ₂ gas containing the superheated water vapor in which the halogen is dissolved is discharged from the exhaust hole provided in the vacuum supply module 85a corresponding to the exhaust hole 71. In this way, the halogen can be removed when the pressure is raised from the vacuum atmosphere to the atmospheric atmosphere.

At this time, in the initial stage of the pressure increase, the N ₂ gas containing the superheated steam is supplied, and in the later stage of the pressure increase, the N ₂ gas containing no superheated steam is supplied, and the dried surface of the substrate to be processed can be sufficiently halogen. Removal. That is, the side for the exhaust gas while supplying N _2, at the beginning of boosting, the supply of N ₂ gas containing superheated steam, to the removal of halogen. In the later stage boosting, free of N ₂ gas supplied to the superheated steam, to replace the superheated steam containing dissolved halogen of the N ₂ gas. In this way, the removal of halogens can be performed more efficiently.

Thereafter, as shown by arrow B _2, the substrate to be processed is conveyed to the purging storage unit 88, as shown by arrow B _3, sent to the load port 89a. Finally, the processed substrate to be processed is sent out from the loading cassette 89a.

In this way, the contamination in the substrate processing apparatus 81 to be processed can be effectively alleviated, and productivity can be improved.

Further, in this case, the superheated steam is used to remove the halogen, but the present invention is not limited thereto, and as shown in Fig. 3, the pure water may be made into a mist using an ultrasonic generating device. That is, although not shown in detail, the halogen removing device 86a includes a control means as an ultrasonic generating device including the storage container 41 and the ultrasonic oscillator 42 shown in FIG. 3, and a supply mechanism including a conduit 46. The line 86c shown in Fig. 8 corresponds to the line 46 shown in Fig. 3. Further, the container constituting the vacuum reserve module 85a corresponds to the processing chamber 44 of Fig. 3, in which a vent hole is provided. On the other hand, the pure water which has been misted by the pure water in the storage container 41 by using the superheated steam generating device 62 or the like is supplied to the true side by the pipe 86c. Inside the empty preparation module 85a.

Further, in the above embodiment, the gas containing N ₂ gas and superheated steam is supplied, but the present invention is not limited thereto, and may be separately supplied to the vacuum preparation module 85a. That is, for example, N ₂ gas, superheated steam, or the like may be supplied to the vacuum preparation module 85a using individual pipes.

Moreover, the mechanism for removing the halogen in the vacuum preparation module 85a can be divided into a vacuum preparation module for removing halogens and a vacuum preparation module other than the vacuum preparation module.

Fig. 9 is a schematic view showing the configuration of a substrate processing apparatus to be processed in this case. Referring to Fig. 9, a substrate processing apparatus according to still another embodiment of the present invention performs processing of a substrate to be processed.

The substrate processing apparatus 91 to be processed includes two plasma processing apparatuses 92a and 92b which are disposed adjacent to each other as a processing module, and two plasma processing apparatuses 92c and 92d as a processing module, and a plasma processing apparatus 92a. 92b are respectively disposed facing and adjacent to each other; the transfer module 93 in a vacuum atmosphere is disposed between the plasma processing devices 92a, 92b and the plasma processing devices 92c, 92d adjacent to the plasma processing devices 92a, 92b, 92c And 92d; the loading module 94 in the atmospheric atmosphere is disposed adjacent to the transfer module 93, and serves as a delivery port of the substrate to be processed before processing or a delivery port of the substrate to be processed after processing; and 4 vacuum preparation modules 95a, 95b, 95c, 95d, pressure adjustment and the like are performed between the transfer module 93 and the loading module 94. Further, the substrate processing apparatus 91 to be processed includes the substrate transporting apparatuses 97a and 97b to be processed, the air purifying storage unit 98, and three loading cassettes 99a, 99b, and 99c.

The plasma processing apparatuses 92a to 92d can individually perform plasma processing. Further, the four vacuum reserve modules 95a to 95d may perform pressure adjustment or the like of the substrate to be processed which is fed into the inside. Further, representative positions of the substrates to be processed in the substrate processing apparatus 91 to be processed are indicated by broken lines.

Further, the substrate processing apparatus 91 to be processed includes a halogen removing device 96a that removes halogen which remains on the substrate to be processed after the plasma treatment. The basic device other than the one of the vacuum preparation module 95a and the halogen removal device 96a, that is, the plasma processing devices 92a to 92d, the transfer module 93, the loading module 94, and the vacuum preparation modules 95b to 95d The same as in the wafer processing apparatus 11 shown in FIG. 1 and the like described above, the description thereof will be omitted. Further, although three load ports 99a, 99b, and 99c are illustrated, each of the load cassettes 99a, 99b, and 99c has the same configuration as each of the load cassettes described above.

The vacuum preparation module 95a serving as the first vacuum preparation module is provided with a halogen removal device 96a for removing halogen which remains on the substrate to be processed after the plasma treatment. The halogen removing device 96a includes a control mechanism that controls to reduce the particle diameter of water droplets as a liquid capable of dissolving halogen, and a supply mechanism that supplies water whose particle diameter is reduced by the control mechanism to be processed. Substrate. The supply mechanism supplies the water whose particle diameter is reduced by the control means to the vacuum preparation module 95a at the time of pressure adjustment.

Here, the configuration of the halogen removing device 96a and the vacuum reserve module 95a will be described. The halogen removing device 96a, although not shown, has a control mechanism as a superheated steam generating device 96b including the water storage container 65, the first heating mechanism 66, and the second heating mechanism 67 shown in Fig. 7, and a supply mechanism. A line 96c is included. The line 96c shown in Fig. 9 corresponds to the line 70 shown in Fig. 7. Further, the container constituting the vacuum reserve module 95a corresponds to the processing chamber 68 having the vent hole 71 of FIG. On the other hand, the superheated water vapor generated by the water in the water storage container 65 using the first heating means 66 or the like is supplied to the vacuum preparation module 95a through the line 96c. Specifically, at the time of boosting, that is, when the substrate to be processed after the plasma treatment is pressurized from a vacuum atmosphere to an atmospheric atmosphere, halogen removal is performed at the same time. At this time, in the vacuum reserve module 95a, for example, N ₂ gas as a gas for pressure adjustment is supplied into the vacuum reserve module 95a, and the pressure in the vacuum reserve module 95a is boosted from the vacuum atmosphere. In the atmosphere of the atmosphere, the N ₂ gas supplied during the pressure increase is supplied with superheated steam, and the halogen is dissolved in the superheated steam to be exhausted, and the halogen is removed as the pressure is increased.

Further, such a halogen removing device is not provided in the other vacuum reserve modules 95b to 95d which are the second vacuum reserve modules. That is, the vacuum preparation module 95a and the halogen removal device 96a provided in the substrate processing apparatus 91 to be processed shown in Fig. 9 are basically the same as the halogen removal device 86a and the vacuum preparation module 85a shown in Fig. 8 described above. The vacuum preparation module provided in the processed substrate processing apparatus 91 shown in FIG. 95b to 95d have the same configuration as the vacuum preparation modules 15a and 15b shown in Fig. 1 described above.

Next, a flow of processing when the substrate to be processed is processed using the substrate processing apparatus 91 to be processed will be described.

First, the processing of the substrate to be processed which is likely to generate halogen will be described. After the plasma processing apparatus 92b, the substrate to be processed was plasma process, the substrate to be processed in the FIG. 9 indicated by C, transported to a preliminary vacuum module 95a shown in _FIG. The substrate to be processed which has been subjected to the plasma treatment is sealed in the vacuum preparation module 95a. Thereafter, the vacuum preheating module 95a is pressurized from the vacuum atmosphere to the atmospheric atmosphere. At this time, as described above, the halogen removal device 96a is used to supply the N ₂ gas containing the superheated steam to the vacuum preparation module 95a. Thus, the halogen is removed by dissolving it in the superheated steam. At this time, the N ₂ gas containing the superheated water vapor in which the halogen is dissolved is discharged from the exhaust hole provided in the vacuum supply module 95a corresponding to the exhaust hole 71. In this way, the halogen can be removed when the pressure is raised from the vacuum atmosphere to the atmospheric atmosphere.

At this time, in the initial stage of the pressure increase, the N ₂ gas containing the superheated steam is supplied, and in the later stage of the pressure increase, the N ₂ gas containing no superheated steam is supplied, and the dried surface of the substrate to be processed can be sufficiently halogen. Removal. That is, the side for the exhaust gas while supplying N _2, at the beginning of boosting, the supply of N ₂ gas containing superheated steam, to the removal of halogen. In the later stage boosting, free of N ₂ gas supplied to the superheated steam, to replace the superheated steam containing dissolved halogen of the N ₂ gas. In this way, the removal of halogens can be performed more efficiently.

Thereafter, as shown by arrow C _2, the substrate to be processed is conveyed to the purging storage unit 98, as shown by arrow C _3, sent to the load port 99a. Finally, the processed substrate to be processed is sent out from the loading cassette 99a.

Next, a description will be given of a processing situation of a substrate to be processed which is unlikely to generate halogen. After the plasma processing apparatus 92a, the substrate to be processed was plasma process, the substrate to be processed in the FIG. 9 indicated by C, transported to a preliminary vacuum module 95b shown in FIG _4. The substrate to be processed which has been subjected to the plasma treatment is sealed in the vacuum preparation module 95b. Thereafter, the vacuum preheating module 95a is pressurized from the vacuum atmosphere to the atmospheric atmosphere.

Thereafter, as indicated by arrow C _5, the substrate to be processed is conveyed to the purging storage unit 98, as shown by arrow C _3, sent to the load port 99a. Finally, the processed substrate to be processed is sent out from the loading cassette 99a.

In this way, in the processing step, the transport path of the substrate to be processed can be different between the substrate to be processed subjected to the process of generating halogen and the substrate to be processed which is subjected to the process of not generating halogen. . In other words, the substrate to be processed which is subjected to halogen treatment is subjected to pressure increase and halogen removal in the vacuum preparation module 95a, and the substrate to be processed which does not cause halogen treatment is applied to the vacuum preparation module 95b. In 95d, only boosting is performed. Thereby, the contamination in the substrate processing apparatus 91 to be processed can be effectively alleviated, and productivity can be improved.

Further, at this time, as shown in FIG. 3, the pure water may be made into a mist using an ultrasonic generating device. That is, although not shown in detail, the halogen removing device 96a includes a control means as an ultrasonic generating device including the storage container 41 and the ultrasonic oscillator 42 shown in FIG. 3, and a supply mechanism including a conduit 46. The line 96c shown in Fig. 9 corresponds to the line 46 shown in Fig. 3. Further, the container constituting the vacuum reserve module 95a corresponds to the processing chamber 44 of Fig. 3, in which a vent hole is provided. On the other hand, the pure water which has been misted by the pure water in the storage container 41 by using the superheated steam generating device 62 or the like is supplied to the vacuum preparation module 95a via the line 96c.

Further, such a mechanism can be effectively applied to the case where the processed substrate processing apparatus 91 performs different processing in a plurality of different plasma processing apparatuses 92a to 92d, for example, plasma etching, plasma processing. In CVD, plasma sputtering, or doping treatment using plasma, that is, plasma doping or the like, parallel and plural-numbered processes are specifically performed for the treatment of halogen generation and the generation of halogen.

In this case, for example, between the vacuum preparation module 95a for the substrate to be processed which is subjected to the halogen treatment, and the vacuum preparation modules 95b to 95d for the substrate to be processed which does not cause the halogen treatment, The interval can be set.

Further, in the above-described embodiment, the plasma treatment using microwaves is performed during the etching. However, the present invention is not limited thereto, and for example, a parallel plate type plasma or an ICP (Inductively-Coupled Plasma) may be used. ), ECR (Electron Cyclotron Resonance) plasma and other plasma.

Although the embodiments of the present invention have been described above with reference to the drawings, the present invention is not limited to the illustrated embodiments. Various modifications or variations can be added to the embodiments shown in the drawings within the scope of the invention.

11‧‧‧ Wafer Processing Unit

12a, 12b, 82a, 82b, 92a, 92b, 92c, 92d‧‧‧ plasma processing equipment

13, 83, 93‧‧‧ Transfer Module

14, 84, 94‧‧‧ loading modules

15a, 15b, 85a, 85b, 95a, 95b, 95c, 95d‧‧‧ vacuum preparation module

16, 61, 86a, 96a‧‧‧ halogen removal device

17a, 17b‧‧‧ wafer transport device

18, 88, 98‧‧ ‧ Explosion Storage Department

19a, 19b, 89a, 89b, 99a, 99b, 99c‧‧‧ loading 埠

21‧‧‧Processing container

22‧‧‧Gas Supply Department

23‧‧‧Guide

24‧‧‧Microwave Generator

25‧‧‧guide tube

26‧‧‧ coaxial waveguide

27‧‧‧ dielectric board

28‧‧‧Slots

29‧‧‧Slot antenna board

30‧‧‧ dielectric window

31, 34‧‧‧ gas supply port

32‧‧‧Central Gas Supply Department

33‧‧‧ hollow member

35‧‧‧External Gas Supply Department

40, 63‧‧‧Control agencies

41‧‧‧ storage container

42‧‧‧Supersonic oscillator

43‧‧‧Supersonic generator

44, 68‧‧ ‧ processing room

45, 69‧‧‧ mounting table

46, 70, 86c, 96c‧‧‧ pipeline

47, 64‧‧‧Supply institutions

48‧‧‧cooling supplement

49a, 49b‧‧‧ filter

50‧‧‧ gate valve

51, 72‧‧‧ water vapor

52, 56‧‧‧ wafer

53‧‧‧ water film

54‧‧‧Halogen residues

55‧‧‧Water droplets

62, 86b, 96b‧‧‧ superheated steam generating device

65‧‧‧Water storage container

66‧‧‧First heating mechanism

67‧‧‧Second heating mechanism

71‧‧‧ venting holes

73‧‧‧Superheated steam

81, 91‧‧‧Processed substrate processing device

87a, 87b, 97a, 97b‧‧‧ processed substrate transport device

W‧‧‧Processed substrate (wafer)

FIG. 1 is a schematic view showing a configuration of a wafer processing apparatus as a substrate processing apparatus according to an embodiment of the present invention.

Fig. 2 is a schematic cross-sectional view showing the configuration of a plasma processing apparatus provided in the wafer processing apparatus shown in Fig. 1.

Fig. 3 is a schematic cross-sectional view showing the configuration of a halogen removing device provided in the wafer processing apparatus shown in Fig. 1.

Fig. 4 is a flow chart showing a representative procedure when wafer processing is performed using a wafer processing apparatus according to an embodiment of the present invention.

Fig. 5 is a schematic cross-sectional view showing a part of a wafer and showing a state in which high-temperature steam is used.

Fig. 6 is a schematic cross-sectional view showing a part of the wafer, and shows the state in which the mist-like water droplets generated by the ultrasonic waves are used.

Fig. 7 is a schematic cross-sectional view showing the configuration of a halogen removing device provided in a substrate processing apparatus according to another embodiment of the present invention.

Fig. 8 is a schematic view showing the configuration of a substrate processing apparatus to be processed according to still another embodiment of the present invention.

Fig. 9 is a schematic view showing the configuration of a substrate processing apparatus to be processed according to still another embodiment of the present invention.

16‧‧‧Halogen removal unit

40‧‧‧Control agency

41‧‧‧ storage container

42‧‧‧Supersonic oscillator

43‧‧‧Supersonic generator

44‧‧‧Processing room

45‧‧‧ mounting table

46‧‧‧pipe

47‧‧‧Supply institutions

48‧‧‧cooling supplement

49a, 49b‧‧‧ filter

50‧‧‧ gate valve

W‧‧‧Processed substrate (wafer)

Claims (15)

A halogen removing device for processing a substrate to remove halogen remaining on a substrate to be processed, comprising: a control mechanism for controlling a particle size of a liquid droplet capable of dissolving the halogen; and a supply mechanism capable of A liquid that dissolves the halogen is supplied to the substrate to be processed. The halogen removal device for processing a substrate according to claim 1, wherein the liquid capable of dissolving the halogen is water; the control mechanism comprises: a superheated steam generating device that heats the water to generate water vapor, and then The generated steam is further heated to generate superheated steam; the supply means supplies the superheated steam generated by the superheated steam generating means to the substrate to be processed. The halogen removal device for processing a substrate to be processed according to the second aspect of the invention, wherein the superheated steam generation device includes: a mounting table on which the substrate to be processed can be placed; and a water storage container for storing water a conduit connecting the upper side portion of the water storage container to an upper side portion of the mounting table; the first heating mechanism heating the water in the water storage container to become water vapor; and the second heating mechanism The water vapor is heated in the line to become superheated steam. The halogen removal apparatus for processing a substrate to be processed according to the first aspect of the invention, wherein the control unit includes an ultrasonic generating device that generates ultrasonic waves, and the super-wave generating device is used. The sound wave generating device controls so that the liquid capable of dissolving the halogen becomes a mist to reduce the particle diameter, and the supply means supplies the liquid capable of dissolving the halogen to the substrate to be processed. The halogen removal device for processing a substrate to be processed according to claim 4, wherein the ultrasonic generation device comprises: a storage container that stores a liquid capable of dissolving the halogen; and an ultrasonic oscillator that is configurable in the storage container internal. The halogen removal apparatus for processing a substrate to be processed according to claim 5, wherein the supply mechanism includes: a mounting table on which the substrate to be processed can be placed; and a conduit having a substrate from which the substrate can be processed The upper side is supplied with a mist-like discharge port for dissolving the halogen liquid, and the upper side portion of the storage container is coupled to the upper side portion of the mounting table. A halogen removal apparatus for processing a substrate to be processed according to the first aspect of the invention, wherein the liquid capable of dissolving the halogen contains water. The halogen removal apparatus for processing a substrate to be processed according to claim 1, further comprising: a temperature adjustment mechanism that adjusts the substrate to be processed to a predetermined temperature. The halogen removal apparatus for processing a substrate to be processed according to claim 1, further comprising: a recovery mechanism for returning the liquid supplied from the supply mechanism capable of dissolving the halogen And the extraction mechanism extracts the halogen from the liquid capable of dissolving the halogen recovered by the recovery mechanism. A substrate processing apparatus according to the invention includes: a plasma processing apparatus that performs plasma processing on a substrate to be processed; and a halogen removal apparatus for processing the substrate to be processed, and removes halogen remaining on the substrate to be processed after the plasma treatment; The halogen removal apparatus for processing a substrate to be processed includes a control unit that controls to reduce a particle diameter of a liquid droplet capable of dissolving the halogen, and a supply mechanism that supplies a liquid capable of dissolving the halogen to the substrate to be processed. A processed substrate processing method for processing a substrate to be processed, comprising: a plasma processing step of performing plasma treatment on the substrate to be processed using a processing gas; and a supplying step after the plasma processing step Control is performed such that the particle size of the liquid droplet capable of dissolving the halogen is reduced, and the liquid capable of dissolving the halogen is supplied to the substrate to be processed. A substrate processing apparatus for processing a substrate to be processed, comprising: a plasma processing apparatus for performing plasma processing on a substrate to be processed; and a transfer module disposed adjacent to the plasma processing apparatus to be internally provided The vacuum atmosphere has a transport path to the substrate to be processed of the plasma processing apparatus; the loading module is disposed adjacent to the transfer module, and the interior thereof is an atmospheric atmosphere, and the loading module is used as an electric system. a feeding and feeding port of the substrate to be processed before and after the slurry treatment; a vacuum preparation module disposed in the transfer module, the transfer module and the loading Between the modules, the pressure is adjusted by supplying and discharging the gas inside thereof; and the halogen removing device removes the halogen remaining on the substrate to be processed after the plasma treatment; the halogen removing device includes: control a mechanism for controlling a particle size of a droplet of a liquid capable of dissolving a halogen; and a supply mechanism for supplying a liquid capable of dissolving the halogen whose particle diameter is reduced by the control mechanism to the substrate to be processed; The mechanism supplies, during the pressure adjustment, the liquid capable of dissolving the halogen, which is reduced in the particle size by the control mechanism, into the vacuum preparation module. The substrate processing apparatus according to claim 12, wherein the liquid capable of dissolving the halogen is water; the control mechanism comprises: a superheated steam generating device that heats the water to generate water vapor, and then generates the generated The steam is heated to generate superheated steam; the supply means mixes the superheated steam generated by the superheated steam generating means with the pressure adjusting gas, and supplies it to the vacuum preheating module. The substrate processing apparatus according to claim 12, wherein the control means includes an ultrasonic generating device that generates ultrasonic waves, and is controlled by the ultrasonic generating device so that a liquid capable of dissolving halogen becomes a mist. The particle diameter is reduced. The supply means mixes the mist-dissolving liquid with the pressure adjusting gas and supplies it to the vacuum preparation module. A processed substrate processing apparatus for processing a substrate to be processed, comprising: a plasma processing apparatus for performing plasma processing on the substrate to be processed; and a transfer module disposed adjacent to the plasma processing apparatus to allow a vacuum inside thereof An ambient atmosphere having a transport path to the substrate to be processed of the plasma processing apparatus The loading module is disposed adjacent to the transfer module to make the interior thereof an atmospheric atmosphere. The loading module serves as a feeding and discharging port of the processed substrate before and after the plasma processing; first and second vacuum preparation a module disposed in the transfer module, wherein a pressure adjustment is performed between the transfer module and the loading module by supplying and discharging gas inside thereof; and a halogen removing device is removed in the plasma a halogen remaining on the substrate to be processed after the treatment; the halogen removing device includes: a control mechanism that controls to reduce a particle diameter of a liquid droplet capable of dissolving the halogen; and a supply mechanism that causes the droplet to be controlled by the control mechanism a liquid having a reduced particle size capable of dissolving the halogen is supplied to the substrate to be processed; and the supply mechanism supplies a liquid capable of dissolving the halogen which is reduced in particle size by the control mechanism to the first vacuum during pressure adjustment Prepare the module.