201250264 六、發明說明： 【發明所屬之技術領域】201250264 VI. Description of the invention: [Technical field to which the invention pertains]
本發明係關於一種動作試驗裝置、動作試驗方法、及如 此之電子裝置之製造方法，其係例如在IC(Integrated Circuit:積體電路）與LSI(Large ScaU :大型積 體電路）、或搭載有如主機板之半導體裝置之電子裝置中 用以測定電磁場分佈等電性特性。 【先前技術】 近年來，内置於電子裝置中之半導體裝置之高積體化、 咼速化顯著。半導體裝置一旦高積體化，運轉時流動之電 流會增大，因此而產生之電磁波之影響將達不容忽視之程 度。因此，有必要正確掌握電子裝置、尤其是各個半導體 裝置及搭載該等之基板中之電磁場之產生狀況，使半導體 裝置與零件之配置最佳化，從而極力抑制電磁波對周圍零 件之影響。 然而，因動作時之電流增大，半導體裝置之消耗電力亦 增大，由此所致之發熱量將增大。發熱量之增大對半導體 裝置之正常動作亦會造成影響。因此，於通常之動作時， 作為散熱對策，一般於半導體裝置中安裝風冷式或水冷式 等之冷卻裝置，從而減緩熱之影響。 隨著發熱量增大，冷卻裝置需要較大者。又，亦有包含 金屬而構成者。因此’在掌握正破之電磁性之產生狀況 上’有冷卻裝置之存在會帶來障礙之情形。但，若欲卸除 冷卻裝置而測定電磁性之產生狀況，則無法正確反映半導 163200.doc 201250264 體裝置之動作狀態。 另一方面，除了電磁性之產生狀況之外，由於只要可直 接測定例如半導體裝置内之電流或電壓即可獲知半導體裝 置内之實際動作時之電性狀態，故在製品開發上非常有 用。 繁於如此之狀況’關於在減緩發熱之影響之狀態下測定 半導體裝置之動作時之電性特性之要求高漲。 對應如此之要求’專利文獻1中揭示有藉由對半導體裝 置喷灑液體氮氣或液化碳酸氣體而進行冷卻之技術。又， 專利文獻2中揭示有以液體氮氣冷卻收納半導體裝置之試 料平台自身而測量該半導體裝置之電性特性之技術。 [先前技術文獻] [專利文獻] [專利文獻1]曰本特開平7-92223號公報 [專利文獻2]曰本特開平7-29947號公報（段落0021) 【發明内容】 [發明所欲解決之問題] 如專利文獻1，在直接喷灑液體氮氣或液化碳酸氣體之 技術中’必須在電性特性之敎中—直持續㈣，因成本 方面之問題故不適於長時間之測I χ，若將探針靠近半 :體裝置’則探針會受所喷灑之氣體之影響而難以正確測 定〇 如專利文獻2’以液體氮氣冷卻試料平台之情形時，亦 仍有敎時間若長則需要大量液體氮氣，從而在成本方面 163200.doc 201250264 產生問題。 /發㈣於上述之問題，其主要課題在於提供—種動作 試驗裝置，其不使用先前之冷卻裝置，而—方面冷卻運轉 時之發熱會成為測定電性特性之阻礙因素之電子裝置，且 容易測定電性特性。 [解決問題之技術手段] 解決以上課題之本發明之電子裝置之製造方法，其係運 轉時之發熱會成為測定電性特性之阻礙因素之電子裝置之 製造方法，且包含以下階段：使上述電子裝置以浸潰於在 特疋之容器内流動之惰性液體中之狀態運轉，且進行運轉 中之上述電子裝置之電性特性之測定之階段；及上述電性 特性之測定結果滿足特定條件時，自上述惰性液體取出上 述電子裝置，於該電子裝置之特定部位安裝散熱裝置或電 磁遮蔽構件之階段。 另，可行的是，於與上述惰性液體接觸之容器之特定部 位設置接地電極，使上述惰性液體流動時產生之靜電通過 上述接地電極發散至容器外。 在如此之本發明中’由於使電子裝置在浸潰於惰性液體 中之狀態下運轉，故不會有運轉時之發熱成為測定電子裝 置之電性特性之阻礙因素之狀況。 本發明之電子裝置之動作試驗裝置包含：容器，其儲存 惰性液體；及循環閉路管，其使該容器内之惰性液體流出 至容器外’且使流出之惰性液體再流入上述容器内。於上 述容器中’形成有收納區域，其用以使運轉時會發熱之電 163200.doc -6 · 201250264 子裝置在/SI潰於所儲存之惰性液體中之狀態下運轉，而能 1藉此：定運轉中之上述電子裝置之電性特性，於上述循 衣閉路管之附近介置冷卻機構，其使流通於該循環閉路管 之惰性液體冷卻。 由於使電子裝置在浸潰於容器内之惰性液體中之狀態下 運轉，故無需使用如先前之冷卻裝置，而可測定電子裝置 ^實際運轉狀態之電性特性。由於惰性液體經由循環閉路 管藉由冷卻機構予以冷卻，故不會有電子裝置被異常加熱 至運轉之程度之狀況。 又，藉由於接觸於上述惰性液體之容器之特定部位設置 接地電極，可抑制因惰性液體之循環所致之靜電之產生。 上述惰性液體使用例如介電率為2[F/m]以下者，可防止對 電子裝置之正常之高速動作造成影響。 本發明之電子裝置之動作試驗方法係運轉時之發熱會成 為測定電性特性之阻礙因素之電子裝置之動作試驗方法， 且包含以下階段：將上述電子裝置可運轉地配線且收納於 特疋之谷器内之階段；以浸潰所收納之上述電子裝置之方 式，使惰性液體流入上述容器内之階段；及使上述惰性液 體流動而_方面冷卻上述電子裝置冷卻並使其運轉，且進 行運轉中之上述電子裝置之電性特性之測定之階段。在如 此之動作試驗方法中，不使用先前之冷卻裝置，而可以惰 性液體冷卻電子裝置，並測定運轉甲之電性特性。 另，可行的是，於接觸於上述惰性液體之容器之特定部 位設置接地電極，使上述惰性液體流動時產生之靜電通過 I63200.doc 201250264 上述接地電極而發散至容器外。 又，藉由使上述惰性液體流出至上述容器外、且使所流 出之惰性液體以特定之冷卻機構冷卻並再流入上述容器 内，可使惰性液體始終為一定之溫度，從而有效冷卻電子 裝置。 [發明之效果] 在本發明之動作試驗裝置中，由於在使電子裝置浸潰於 惰性液體中之狀態下測定該電子裝置之電性特性，故不使 用先前之冷卻裝置，而容易正確測定電子裝置本體之電性 特性。 【實施方式】 以下’參照圖式說明本發明之實施形態。 圖1係本實施形態之動作試驗裝置之概觀圖。 動作試驗裝置1具備：容器1〇，其收納運轉時之發熱成 為測定電性特性之阻礙因素之電子裝置2 ;熱交換機2 〇， 其用以冷卻容器10内所儲存之冷卻液3;泵3〇，其用以使 冷卻液3在容器10與熱交換機20之間循環；及試驗機4〇， 其用以進行電子裝置2之動作試驗。 於容器10與泵30之間配管冷卻液排出管4 ,於泵3〇與熱 交換機20之間配管熱交換管5，於熱交換機2〇與容器⑺之 間配管冷卻液注入管6。 電子裝置2係單體之半導體裝置，或搭載有1個以上半導 體裝置之基板。冷卻液3係非導電性者，且宜為介電率？ [F/m]以下之惰性液體。其原因為，若介電率升高，則於 163200.doc 201250264 電子裝置2内傳送之高速信號之波形減弱，從而會對正常 之高速動作帶來障礙。冷卻液3，可使用例如氟系惰性液 體、3M氟化液FlUorinert、純水、苯、矽油 '及礦物油 等》 圖2係用以說明容器1〇之詳細之構成之a_a剖面圖。 於容器10中儲存之冷卻液3僅動作試驗時浸潰電子裝置2 之量》於容器10内，以收納面自容器1〇之底面12成為特定 之高度之方式，設置用以收納電子裝置2之收納台n。於 容器10内接觸於冷卻液3之部位設置接地電極13。在圖2之 例中，於收納台11下之容器1〇之底面12設置有接地電極 13 »於接地電極13連接有延伸至容器1〇外部之導線14，且 經由該導線14在容器1〇之外部接地。 藉由设置收納台11而於動作試驗時於其上收納電子裝置 2 ’使電子裝置2自所有方向藉由冷卻液3冷卻。無收納台 11之情形時，電子裝置2直接置於底面12上，因此無法充 分進打來自電子裝置2之底側之冷卻，從而相較於收納於 收納台11上之情形，冷卻效率較差。於收納台n上之電子 裝置2之附近設置溫度感測器15。藉由溫度感測器15，可 測定電子裝置2附近之溫度。 另’亦可於收納台11對應於電子裝置2之各輸入端子設 置電極’且於收納台11上之特定之位置收納電子裝置2， 藉此施加電子裝置2運轉所需之電源、信號。設置於收納 台11之電極連接於在容器1〇外部準備之電源裝置、及信號 產生裝置等電子裝置運轉所需之各種裝置。在如此之構成 163200.doc 201250264 中，由於只要將電子裝置2搭載於收納台11之特定位置即 可運轉，故可有效進行動作試驗。對複數個不同的電子裝 置進行動作試驗之情形時，有必要準備與各個電子裝置2 對應之收納台Π。 於容器10中設置有自熱交換機20注入冷卻液3之注入口 16、及藉由泵30排出冷卻液3之排出口 17。於注入口 16連 接冷卻液注入管6。於排出口 17連接冷卻液排出管4。 圖3係用以說明熱交換機20之構成之圖。 熱交換機20於液槽21内具有散熱器22。於液槽21中儲存 足以浸潰散熱器22之量之2次冷卻液23。於散熱器22中設 置連接熱交換管5之注入口 24、及連接冷卻液注入管6之排 出口 25。於散熱器22中，藉由泵3〇自注入口 24注入冷卻液 3。又，冷卻液3自排出口 25排出至容器1〇。 在熱交換機20中，自泵3〇注入之冷卻液3藉由在散熱器 22中與2次冷卻液23熱交換而冷卻。因此，2次冷卻液叫目 較於冷卻液3始終設定更低溫度。 <運用形態> 於動作試驗之開始時，對收納於容器1()之收納W之電 子裝置2進行動作試驗所需之配線，纟蓄積足以浸潰電子 裝置2之量之冷卻液3。冷卻液3可自容器10之上部直接供 給，亦可將例如冷卻液注入管6連接於冷卻液3之供給裝置 (未圖示）’而自該供給裝置經由注人口 16供給。 動作試驗一旦開始，& &, t v部液3藉由泵3〇自容器1〇之排出 口 17排出，而被輪送至埶交換 …乂换機20。在熱交換機20中經冷 163200.doc 201250264 卻之冷卻液3自熱交換機20經 器10。 由谷器10之注入口 16注入容 …： 冷卻液排出管4、录3〇、熱交換管5、 技Γ 散熱器22、及冷卻液供給管6構成之循環閉 I内循環，冷卻液3經冷卻而返回至容器1〇。 電子裝置2可不使用先前之冷卻裝置，而在容器_一 方面藉由冷卻液3冷卻，並敎運轉中之電性特性。 另，藉由電子裝置2加熱之冷卻液3與2次冷卻㈣之溫 度差較大之情形時’雖可設想即使不使用泵30,冷卻液3 仍會對流而於循環閉路管内循環，但料量冷卻效率則 以泵30強制循環者對電子裝置2之冷卻更有效果。 冷卻液3除了於循環閉路管内循環，亦在容器1〇内對 流。非導電性之冷卻液3中，㈣循環及對流而產生靜電 之狀况。所產生之靜電有可能破壞電子裝置2。接地電極 13藉由排除如此之靜電，而降低因靜電所致之對電子裝置 2之影響。 <具體例> 試驗機40為敎電子裝置2之表面之電磁場分佈之裝置 之情形’藉由上述之動作試驗裝置丨，即使為發熱量較大 之電子裝置2 ’仍可-方面以冷卻液3進行冷卻，並測定通 常運轉時之電磁場分佈。測定f磁場分佈後，可對有會對 電子裝置2之其他電子機器造成影響之虞之部分實施 策。 圖4係使用搭載有複數個半導體裝置之印刷基板”作為 I63200.doc • 11 - 201250264 電子裝置之情形之電磁場分佈之測定結果之例示圖。於該 印刷基板50上，搭載CPU(Central Processing Unit:中央處 理器）51、GPU(Graphic Processing Unit :圖形處理器）52、 兩個RAM(Random Access Memory :隨機存取記憶體）53、 54、及 VRAM(Video Random Access Memory :視訊隨機存 取記憶體）55作為半導體裝置。各半導體裝置係藉由配線 11〜14連接。又，於印刷基板5〇上，除了半導體裝置之 外’為了雜訊對策等’直接配置有電容器等零件pl〜p3。 將如此之印刷基板50收納於容器1 〇之收納台丨丨上，並浸 潰於冷卻液3。在該狀態下對各半導體裝置施加電源電 壓並與實際動作時同樣輸入輸入信號，藉此使印刷基板 50運轉。在運轉狀態下，藉由試驗機40進行電磁場分佈之 測定。此時，以使產生最強電磁場之方式給與輸入信號之 圖案’而觀測電磁場分佈之變化之點亦有用。 在近年來之半導體裝置中，由於自設計時在某種程度上 考慮電磁場分佈，又，封包技術有所提高，故因其自身而 產生之電磁場，與直接配置於印刷基板50上之零件pl〜p3 與配線11〜14之電磁場相比較弱。因此，如圖4所示，檢測 出藉由零件P1〜P3與配線11〜14產生之電磁場較強。 結束動作試驗後，自容器1〇取出印刷基板5〇。測定結果 滿足特定條件之情形時，電子裝置2經乾燥而於特定部位 文裝散熱裝置，且按照所測定之電磁場分佈安裝電磁遮蔽 構件等。如此之動作試驗後之電子裝置2成為可作為製品 出貨者。 .扣 I6320〇.c(〇c -12- 201250264 又，在本實施形態之動作試驗裝置丨中，因不於電子裝 置2上設置散熱裝置等，故可測定運轉中之電子裝置2之各 部之動作。例如，連接複數個半導體裝置而構成電子裝置 2之情形時，可容易監視各半導體裝置之輸出入信號。在 圖4所示之印刷基板50中，可容易監視藉由配線^〜“傳送 之信號。 電子裝置2為半導體裝置之情形時，可監視藉由形成於 半導體裝置内之配線傳送之信號。可以如此之方式進行動 作试驗’且將試驗結果反饋至電子裝置2之製造β 【圖式簡單說明】 圖1係本實施形態之電子裝置之動作試驗裝置之概觀 圖。 圖2係用以說明容器之詳細之構成之A-A剖面圖》 圖3係用以說明熱交換機之構成之圖。 圖4係電磁場分佈之測定結果之例示圖。 【主要元件符號說明】 1 動作試驗裝置 2 電子裝置 3 冷卻液 4 冷卻液排出管 5 熱交換管 6 冷卻液注入管 10 容器 11 收納台 163200.doc 201250264 11 〜14 配線 12 底面 13 接地電極 14 導線 15 溫度感測器 16 注入口 17 排出口 20 熱交換機 21 液槽 22 散熱器 23 2次冷卻液 24 注入口 25 排出口 30 泵 40 試驗機 50 印刷基板 51 CPU 52 GPU 53 RAM 54 RAM 55 VRAM p 1〜p3 零件 163200.doc •14-The present invention relates to an operation test device, an operation test method, and a method of manufacturing such an electronic device, which are, for example, an IC (Integrated Circuit) and an LSI (Large ScaU: large integrated circuit) or mounted thereon. The electronic device of the semiconductor device of the motherboard is used to measure the electrical properties of the electromagnetic field distribution. [Prior Art] In recent years, semiconductor devices built in electronic devices have been highly integrated and decelerated. When the semiconductor device is highly integrated, the current flowing during operation increases, and the influence of the generated electromagnetic wave is not to be ignored. Therefore, it is necessary to accurately grasp the state of occurrence of the electromagnetic field in the electronic device, in particular, the semiconductor device and the substrate on which the substrate is mounted, and to optimize the arrangement of the semiconductor device and the component, thereby suppressing the influence of the electromagnetic wave on the surrounding components as much as possible. However, as the current during the operation increases, the power consumption of the semiconductor device also increases, and the amount of heat generated thereby increases. The increase in heat generation also affects the normal operation of the semiconductor device. Therefore, in the normal operation, as a countermeasure against heat dissipation, a cooling device such as an air-cooled type or a water-cooled type is generally installed in the semiconductor device to reduce the influence of heat. As the amount of heat generation increases, the cooling device needs to be larger. Also, there are also those that contain metal. Therefore, there is a case where there is a problem that the presence of a cooling device exists in the situation of grasping the electromagnetic property of the broken. However, if the electromagnetic device is to be removed by removing the cooling device, the operation state of the semiconductor device will not be correctly reflected. On the other hand, in addition to the state of occurrence of electromagnetic properties, the electrical state at the time of actual operation in the semiconductor device can be obtained by directly measuring the current or voltage in, for example, a semiconductor device, and is therefore very useful in product development. In such a situation, the demand for measuring the electrical characteristics of the operation of the semiconductor device in the state of mitigating the influence of heat is high. Corresponding to such a request, Patent Document 1 discloses a technique of cooling a semiconductor device by spraying liquid nitrogen gas or liquefied carbonic acid gas. Further, Patent Document 2 discloses a technique of measuring the electrical characteristics of the semiconductor device by cooling the sample platform itself of the semiconductor device with liquid nitrogen. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] JP-A-H07-92223 [Patent Document 2] Japanese Patent Laid-Open Publication No. Hei 7-29947 (paragraph 0021) [Description of the Invention] [Problem] As described in Patent Document 1, in the technique of directly spraying liquid nitrogen or liquefied carbonic acid gas, it must be in the middle of electrical characteristics—continuously (4), which is not suitable for long-term measurement due to cost problems. If the probe is placed close to the half: body device, the probe will be difficult to be correctly measured by the gas to be sprayed. For example, if the sample is cooled by liquid nitrogen to cool the sample platform, there is still a long time. A large amount of liquid nitrogen is required, which causes problems in terms of cost 163200.doc 201250264. / (4) In the above problems, the main problem is to provide an action test device that does not use the previous cooling device, and the heat generated during the cooling operation becomes an electronic device that is an obstacle to measuring electrical characteristics, and is easy. The electrical properties were measured. [Means for Solving the Problems] The method for manufacturing an electronic device according to the present invention, which solves the above problems, is a method for manufacturing an electronic device in which heat generation during operation is a hindrance factor for measuring electrical characteristics, and includes the following steps: When the device is operated in a state of being immersed in an inert liquid flowing in a special container and measuring the electrical characteristics of the electronic device during operation; and when the measurement result of the electrical property satisfies a specific condition, The electronic device is taken out from the inert liquid, and a heat dissipating device or an electromagnetic shielding member is mounted at a specific portion of the electronic device. Further, it is possible to provide a ground electrode at a specific portion of the container in contact with the inert liquid so that static electricity generated when the inert liquid flows can be diffused outside the container through the ground electrode. In the present invention as described above, since the electronic device is operated in a state of being immersed in an inert liquid, heat generation during operation does not become a hindrance factor for measuring the electrical characteristics of the electronic device. The action test apparatus of the electronic device of the present invention comprises: a container for storing an inert liquid; and a circulating closed tube which allows the inert liquid in the container to flow out of the container' and allows the flowing inert liquid to flow into the container. In the container, a storage area is formed, which is used to operate the electric device during operation, and the electric device is operated in a state where the /SI is broken in the stored inert liquid, and the The electrical characteristics of the electronic device in the fixed operation are such that a cooling mechanism is placed in the vicinity of the closed circuit tube to cool the inert liquid flowing through the circulating closed pipe. Since the electronic device is operated in a state of being immersed in an inert liquid in the container, it is possible to measure the electrical characteristics of the actual operating state of the electronic device without using a cooling device as in the prior art. Since the inert liquid is cooled by the cooling mechanism via the circulation closed circuit, there is no possibility that the electronic device is abnormally heated to the extent of operation. Further, by providing a ground electrode at a specific portion of the container in contact with the inert liquid, generation of static electricity due to circulation of the inert liquid can be suppressed. When the inert liquid is used, for example, at a dielectric constant of 2 [F/m] or less, it is possible to prevent the normal high-speed operation of the electronic device from being affected. The operation test method of the electronic device according to the present invention is an operation test method for an electronic device that measures heat resistance during operation, and includes the following steps: the electronic device is operatively wired and stored in an ampoule a stage in the granulator; a step of causing the inert liquid to flow into the container by dipping the electronic device housed therein; and flowing the inert liquid to cool and operate the electronic device, and operating The stage of measuring the electrical characteristics of the above electronic device. In the action test method as described above, the previous cooling device is not used, and the electronic device can be cooled by the inert liquid, and the electrical characteristics of the operation A can be measured. Further, it is possible to provide a ground electrode at a specific portion of the container which is in contact with the inert liquid, so that the static electricity generated when the inert liquid flows is dissipated to the outside of the container through the ground electrode of the above-mentioned I63200.doc 201250264. Further, by allowing the inert liquid to flow out of the container and cooling the discharged inert liquid by a specific cooling means and flowing into the container, the inert liquid can be kept at a constant temperature to effectively cool the electronic device. [Effects of the Invention] In the operation test apparatus of the present invention, since the electrical characteristics of the electronic device are measured while the electronic device is immersed in the inert liquid, it is easy to accurately measure the electrons without using the conventional cooling device. Electrical properties of the device body. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a schematic view showing an operation test apparatus of the present embodiment. The operation test apparatus 1 includes a container 1 that stores heat generated during operation and becomes an electronic device 2 that measures an electrical characteristic, and a heat exchanger 2 that cools the coolant 3 stored in the container 10; That is, it is used to circulate the coolant 3 between the container 10 and the heat exchanger 20; and the testing machine 4 is used for performing the operation test of the electronic device 2. The coolant discharge pipe 4 is piped between the vessel 10 and the pump 30, and the heat exchange pipe 5 is disposed between the pump 3 and the heat exchanger 20, and the coolant injection pipe 6 is piped between the heat exchanger 2 and the vessel (7). The electronic device 2 is a single semiconductor device or a substrate on which one or more semiconductor devices are mounted. Coolant 3 is non-conductive, and should be dielectric? An inert liquid of [F/m] or less. The reason is that if the dielectric constant is increased, the waveform of the high-speed signal transmitted in the electronic device 2 is weakened in the 163200.doc 201250264, which may hinder the normal high-speed operation. For the cooling liquid 3, for example, a fluorine-based inert liquid, a 3M fluorinated liquid FlUorinert, pure water, benzene, eucalyptus oil, and mineral oil can be used. Fig. 2 is a cross-sectional view showing a detailed configuration of the container 1A. The coolant 3 stored in the container 10 is immersed in the container 10 only during the operation test, and is disposed in the container 10 so as to accommodate the electronic device 2 so that the storage surface becomes a specific height from the bottom surface 12 of the container 1 Storage table n. The ground electrode 13 is provided in a portion of the container 10 that is in contact with the coolant 3. In the example of FIG. 2, the bottom surface 12 of the container 1 below the storage table 11 is provided with a ground electrode 13 » the ground electrode 13 is connected with a wire 14 extending to the outside of the container 1 , and via the wire 14 in the container 1 External grounding. By arranging the storage table 11 and accommodating the electronic device 2' during the operation test, the electronic device 2 is cooled by the cooling liquid 3 from all directions. In the case where the storage table 11 is not provided, the electronic device 2 is directly placed on the bottom surface 12, so that the cooling from the bottom side of the electronic device 2 cannot be sufficiently performed, so that the cooling efficiency is inferior compared to the case of being housed in the storage table 11. A temperature sensor 15 is provided in the vicinity of the electronic device 2 on the storage table n. The temperature in the vicinity of the electronic device 2 can be measured by the temperature sensor 15. Alternatively, the storage unit 11 may be provided with an electrode unit corresponding to each input terminal of the electronic device 2, and the electronic device 2 may be housed at a specific position on the storage table 11, thereby applying a power source and a signal required for the operation of the electronic device 2. The electrodes provided on the storage table 11 are connected to various devices required for the operation of the electronic device such as the power supply device prepared outside the container 1 and the signal generating device. In the configuration 163200.doc 201250264, since the electronic device 2 can be operated by being mounted on a specific position of the storage table 11, the operation test can be performed efficiently. When an operation test is performed on a plurality of different electronic devices, it is necessary to prepare a storage table corresponding to each electronic device 2. The container 10 is provided with an injection port 16 into which the coolant 3 is injected from the heat exchanger 20, and a discharge port 17 through which the coolant 3 is discharged by the pump 30. The coolant injection pipe 6 is connected to the injection port 16. The coolant discharge pipe 4 is connected to the discharge port 17. FIG. 3 is a diagram for explaining the configuration of the heat exchanger 20. The heat exchanger 20 has a heat sink 22 in the liquid tank 21. The second cooling liquid 23 is stored in the liquid tank 21 in an amount sufficient to impregnate the radiator 22. An injection port 24 for connecting the heat exchange tubes 5 and a discharge port 25 for connecting the coolant injection pipe 6 are provided in the radiator 22. In the radiator 22, the coolant 3 is injected from the injection port 24 by the pump 3. Further, the cooling liquid 3 is discharged from the discharge port 25 to the container 1A. In the heat exchanger 20, the coolant 3 injected from the pump 3 is cooled by heat exchange with the secondary coolant 23 in the radiator 22. Therefore, the secondary coolant is always set to a lower temperature than the coolant 3. <Application form> At the start of the operation test, the wiring required for the operation test of the electronic device 2 housed in the container 1 () is stored, and the amount of the coolant 3 sufficient to impregnate the electronic device 2 is accumulated. The coolant 3 may be directly supplied from the upper portion of the container 10, or may be supplied from the supply device via the injection population 16 by, for example, a coolant injection pipe 6 connected to a supply device (not shown) of the coolant 3. Once the action test is started, the && t v liquid 3 is discharged from the discharge port 17 of the container 1 by the pump 3, and is sent to the 埶 exchange 乂 changer 20. In the heat exchanger 20, the coolant 3 is cooled by the 163200.doc 201250264, and the heat exchanger 3 is connected to the heat exchanger 20. The injection port 16 of the trough 10 is injected into the container: the cooling liquid discharge pipe 4, the recording heat exchanger pipe 5, the technical heat sink 22, and the coolant supply pipe 6 constitute a circulation closed I inner circulation, and the cooling liquid 3 It is returned to the vessel 1 by cooling. The electronic device 2 can be cooled by the coolant 3 in the container_on the container without using the previous cooling device, and the electrical characteristics during operation. In addition, when the temperature difference between the cooling liquid 3 heated by the electronic device 2 and the secondary cooling (4) is large, it is conceivable that even if the pump 30 is not used, the cooling liquid 3 will circulate in the circulating closed pipe, but it is expected to flow. The amount of cooling efficiency is more effective for the cooling of the electronic device 2 by the pump 30 forced circulation. The coolant 3 is convected in the vessel 1〇 in addition to circulation in the circulating closed conduit. In the non-conductive coolant 3, (4) a situation in which static electricity is generated by circulation and convection. The generated static electricity may damage the electronic device 2. The ground electrode 13 reduces the influence on the electronic device 2 due to static electricity by eliminating such static electricity. <Specific Example> In the case where the testing machine 40 is a device for electromagnetic field distribution on the surface of the electronic device 2, by the above-described operation test device, even the electronic device 2 that generates a large amount of heat can be cooled. The liquid 3 was cooled, and the electromagnetic field distribution during normal operation was measured. After measuring the f magnetic field distribution, it is possible to implement a part of the problem that affects other electronic devices of the electronic device 2. 4 is a view showing an example of measurement results of an electromagnetic field distribution in the case of using a printed circuit board on which a plurality of semiconductor devices are mounted as an I63200.doc • 11 - 201250264 electronic device. The CPU (Central Processing Unit: Central processing unit 51, GPU (Graphic Processing Unit) 52, two RAM (Random Access Memory) 53, 54 and VRAM (Video Random Access Memory: Video Random Access Memory) In the case of the semiconductor device, the semiconductor devices are connected by the wirings 11 to 14. Further, in the printed circuit board 5, except for the semiconductor device, components such as capacitors pl to p3 are directly disposed for the purpose of noise countermeasures and the like. The printed circuit board 50 is stored in the storage table of the container 1 and is immersed in the cooling liquid 3. In this state, a power supply voltage is applied to each semiconductor device, and an input signal is input in the same manner as in the actual operation, thereby printing. The substrate 50 is operated. In the operating state, the electromagnetic field distribution is measured by the testing machine 40. At this time, in order to generate the strongest electromagnetic field. It is also useful to observe the change of the electromagnetic field distribution with the pattern of the input signal. In recent years, in the semiconductor device, since the electromagnetic field distribution is considered to some extent from the design, the packet technology is improved, so because of its own The generated electromagnetic field is weaker than the electromagnetic fields of the components pl to p3 disposed directly on the printed circuit board 50 and the wirings 11 to 14. Therefore, as shown in FIG. 4, the components P1 to P3 and the wirings 11 to 14 are detected. The generated electromagnetic field is strong. After the end of the operation test, the printed circuit board 5 is taken out from the container 1. When the measurement result satisfies the specific condition, the electronic device 2 is dried and the heat sink is mounted on the specific portion, and the electromagnetic field is measured according to the measured The electromagnetic shielding member or the like is distributed and installed. The electronic device 2 after the operation test can be used as a product shipper. The buckle I6320〇.c (〇c -12-201250264, in the operation test device of the present embodiment, Since the heat sink or the like is not provided in the electronic device 2, the operation of each unit of the electronic device 2 in operation can be measured. For example, a plurality of semiconductor devices are connected In the case of the electronic device 2, the input and output signals of the respective semiconductor devices can be easily monitored. In the printed circuit board 50 shown in Fig. 4, the signal transmitted by the wiring can be easily monitored. The electronic device 2 is a semiconductor device. In this case, the signal transmitted by the wiring formed in the semiconductor device can be monitored. The operation test can be performed in such a manner that the test result is fed back to the manufacturing of the electronic device 2 [FIG. 1 is a simple implementation] FIG. An overview of the action test device of the electronic device of the form. Figure 2 is a cross-sectional view of the A-A for explaining the detailed configuration of the container. Figure 3 is a view for explaining the configuration of the heat exchanger. Fig. 4 is an illustration of the measurement results of the electromagnetic field distribution. [Description of main components] 1 Operation test device 2 Electronic device 3 Coolant 4 Coolant discharge pipe 5 Heat exchange pipe 6 Coolant injection pipe 10 Container 11 Storage table 163200.doc 201250264 11 ~ 14 Wiring 12 Bottom surface 13 Ground electrode 14 Conductor 15 Temperature sensor 16 Injection port 17 Discharge port 20 Heat exchanger 21 Tank 22 Radiator 23 2 times Coolant 24 Injection port 25 Discharge port 30 Pump 40 Test machine 50 Printed substrate 51 CPU 52 GPU 53 RAM 54 RAM 55 VRAM p 1~p3 part 163200.doc •14-