201248351 六、發明說明： 【發明所屬之技術領域】 本發明係關於能帶隙參考電路，尤指運用摺疊疊接運算放大器 的能帶隙參考電路。 【先前技術】 具有低供應t壓性f的師隙參考轉（VGltage Refe職〇已廣泛地制於各魏齡理，然而，賴上降低供應 電壓的方式之-是使料有低臨界賴（thm—tage)的金氧 半場效電晶難程’但是上賴程卻會造成製造成本的增加。 第1圖為習知Brokaw能帶隙參考電路的電路圖。包含有： 電抓源110 N型金氧半場效電晶體⑽、能帶隙參考電壓產生單元 130以及微調電阻⑽，其中電流源11()包含有複數個p型金氧半場 效電晶體m、m，以及能帶隙參考電壓產生單元13〇包含有複數 個n型雙載子接面電晶體⑶、132以及複數個電阻i33、134。由 於能帶隙參考電路100的運作為熟習技藝者所知，故於此不另資 述。由圖可知，供應電愿WD係為能㈣參考雜VBG1、電晶體 0的閘極源極電壓I VGS1 ’以及電晶體lu的源極_汲極驅動電壓 的總和，由於電晶體12()的__雜輕差1需要大於臨界 電壓值，因此，若欲降低供應電壓VDD，則可藉由調整元件製程以 降低臨界電壓，但此舉將會提升生產成本。 201248351 另外，由習知技彳# 參考賴輸㈣在大多數產生與崎溫度_的能帶隙 的最小值可由·25伏特，故第丨圖中的供應賴柳 VDD = 1 25 + ν . GSl+V〇v!(—般來說，VDD約為2.1伏特）。 之二：參:ΓΙ0°並無法有效地於生產成本與供臟 低供應電壓的環境中要將能帶隙參考電路1Μ應用於較 元件f程，另— 隙參考電路1GG必須採用成本較高的 失者雷:咖―方面，若要_成本較㈣元件製程來實作能帶隙 輯产中，則能帶隙參考電路觸便需要應用於較高供應電壓 【發明内容】 灸者ϋ明Γ的之—在於提供—種具有摺疊疊接式電路的能帶隙 其可以降低供應電壓而不需使用較高成本的低臨界電壓 鱼氧半場效電晶體製程。 一=發明魏帶齡考電路，包含有—運觀大電路以及 =帶隙參考電壓產生單元。該運算放大電路包含有—摺疊疊接運 減大Hx提m錄出，其巾該放大依據該 —疊接運算放大器中-狀端點的電壓來提供—輔助電壓，而該 特定端點的電壓係對應於該第—電流輸出之—電流狀態；該能帶隙 5 201248351 參考電壓產生單元，爐_放大電路，其中該能帶隙參考電 壓產生單元依_電錄験補助龍來運作，而使關助電壓 作為一能帶隙參考電壓。 本發明另揭示-種產生-能帶隙參考電壓之方法，包含有：使 用-摺疊疊接運算放大ϋ來提供—電流輸出；依據該触疊接運算 放大器中-特定端關電縣產生—獅電壓；以及使用一能帶隙 參考電壓產生單元來依__龍以及該電流輸出的—電流狀態 進行運作，以使該輔助電壓作為該能帶隙參考電壓。 【實施方式】 第2圖為本發明一實施例的示意圖。能帶隙參考電路2〇〇包含 (但不侷限於）：運算放大電路2〇5以及能帶隙參考電壓產生單元 230,其中運算放大電路2〇5包含擅疊疊接運算放大器以及輔助 單元220。摺疊疊接運算放大器21〇提供給能帶隙參考電壓產生單 元230的電流輸出ι〇ϋτ會具有不同的電流狀態(例如，由 於度改變而造成電流狀態ST(I0UT)的改變），進而透過摺疊疊接運 算放大器210來產生對應於電流狀態3丁(1〇1^的特定端點電壓Vx。 輔助單元220係用來輔助驅動能帶隙參考電壓產生單元wo以及將 特定端點電壓vx放大並依據特定端點電壓Vx來提供輔助電壓Va 至能帶隙參考電壓產生單元230，以穩定能帶隙參考電壓產生單元 230之能帶隙參考電壓，換言之，能帶隙參考電塵產生單元mo依 據電流狀態ST(I0UT)與輔助電壓VA來運作，而使輔助電壓乂六作為 201248351 .所要的能帶隙參考電壓。為了供應較低的參考電壓WD給能帶隙 參考電路，本實施例係利賴疊疊接的電路來降低電壓頭部空 間（voltageheadroom)的損耗。 第3圖為本發明另-實施例的示意圖。基於第2圖的架構，能 帶隙參考電路3GG包含(但不舰於）：運算放大電路3()5、能帶隙參 考電壓產生單元330以及微調電阻340，其中運算放大電路3〇5包 含摺疊疊接運算放大器310以及輔助單元32〇。摺疊疊接運算放大 器310包含-p型電晶體電流源312及一 N型電晶體電流源犯， 其中電流源312包含-第-電流源單元313及一第二電流源單元 314。此外，第一電流源單元313包含複數個電晶體匕與匕，以及 第二電流源單元314包含複數個電Mp3|1|P4，其巾ρι#ρ2的源 極皆用以接收參考電壓VDD，Pl與p2的閘極皆輕接於p3的沒極， 以及P1與P2的汲極分別耦接於J>3與h的源極並輸出一第一電流輸 出(本實把例中’該第-電流輸出即為上述的電流輸出！㈣，且包含 有電流1!與12。此外，關於上述之Ι〇υτ會具有不同的電流狀態 st(iout)，舉例來說，可以是電流&與電流彼此之間的大小關係）。 另外’ p3與p4的閘極皆用以接收預定電壓Vp2，p4的没極係為一特 定端點NP(其具有特定端點電壓Vx)，以及&與p4的沒極輸出一第 二電流輸出(本實施例中，該第二電流輸出包含有電流^與^)。 電流源315包含複數個電晶體Νι、N2、n3以及n4，其中％ 與N2的;及極分別搞接於與&的沒極並汲取該第二電流輸出，％ 201248351 雜的源極心 =一預定- 辅助早7〇 32〇包含—p型金氧半場效電晶體 ==參考電壓、其間極_於特定端點w二== 點電壓VX，以及其沒極搞接於微調電阻 寺疋知 vf乍為所㈣咖參彻，㈣嫩34=1 助於電 1 隙參考電壓端NB以微調該能帶隙 微 可以是-個選擇性的元件。 号電堅以思，_電阻340 在大多數能帶隙參考電壓輸出約為i&伏特，因此，獅⑽ 為〇〇=。其相 ===:·汲極驅咖，-般來說約 ™ 電路減少了G·7伏特，此外，本實 ⑪並未使用减本的舰界電_程。 數值僅供範例說明之用，並非用來作為本發明之J；電壓 本發明並不舰上述實施例之電路，例如，可串接-對N型金 氧伟效電晶體於摺疊疊接運算放大器則下方、並接一 p型金氧 +场效電4·Ι>5，献加—f_Qi#Q2 變化均符合本發明的精神。 、·-又卞上的 曰曰 另外，電晶體㈣xf換為—N型錢半場效U體，其電 201248351 體的閉極與源極分_接於特定端點NP與能帶隙參考電壓端他， 以及該電晶體的沒極則用以接收參考電壓。另外，輔助單元 I20可以疋—個選擇性的元件，因此，省略輔助單元320而將特定 祕NP轉接於能帶隙參考電壓端湘，此時用來參 電壓的辅助輕VA即是狀端點賴νχ。 帶隙參考 發明產生能帶隙參考樣之方法的一實施例的流程 順庠二 相同的結果，則步驟不—定要遵照第4圖的 所示之处2產生能帶隙參考電壓之方法係應用於第2圖與第3圖 ’、月b帶隙參考電路2〇〇、3〇〇,並可簡單歸納如下： 晴__織—電流輸出； /姻.依據該摺疊叠接運算放大器中一特定端點的賴來產生 一輔助電壓；以及 驟4〇6 .使用一能帶隙參考電壓產生單元來依據該輔助電壓以及 該電流輸出的-電流狀態進行運作，以使該輔助電壓作 為一能帶隙參考電壓。 定端點=厂4,可使用一㈣電晶體之控制端來接收該特 述以產生該輔助電壓。由於熟習技藝者可根據上 ==圖與第3圖所示之能帶隙參考電路200、的 易地瞭解第4圖中每-步_，故於此 201248351 练合上述，本發明提供一種能帶隙參考電路裝置及相關方法以 實現不須㈣高成本的低臨界電壓錄半場效電晶體製程即可降低 參考電壓’因此可大為提升電路應闕面以及節敍量製程成本。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍 所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 【圖式簡單說明】 第1圖為f知BiOkaw能帶隙參考電路的電路示意圖。 第2圖為本發帶隙參考電路之—實施儀魏方塊示意圖。 第3圖為本發明能帶隙參考電路之另__實施例的電路示意圖。 第4圖為本發明產生能帶隙參考電壓之方法的—實施例的流程圖。 【主要元件符號說明】 能帶隙參考電路 電流源 5 p型金氧半場效電晶體 N型金氧半場效電晶體 能帶隙電壓產生單元 N型雙載子電晶體 電阻 微調電阻 運算放大電路 100、200、300 110201248351 VI. Description of the Invention: [Technical Field] The present invention relates to a bandgap reference circuit, and more particularly to an energy bandgap reference circuit using a folded lapped operational amplifier. [Prior Art] The VGltage Refe has a low supply of t-pressure. The VGltage Refe has been widely used in various applications. However, the way to reduce the supply voltage is to make the material have a low critical value. Thm-tage) of the gold-oxygen half-field effect of the electrolysis process, but the upper process will increase the manufacturing cost. Figure 1 is a circuit diagram of the conventional Brokaw bandgap reference circuit, including: Electric source 110 N a gold-oxygen half field effect transistor (10), a bandgap reference voltage generating unit 130, and a trimming resistor (10), wherein the current source 11() includes a plurality of p-type MOS field-effect transistors m, m, and a bandgap reference voltage generation The unit 13A includes a plurality of n-type bipolar junction transistors (3), 132 and a plurality of resistors i33, 134. Since the operation of the bandgap reference circuit 100 is known to those skilled in the art, it is not described herein. As can be seen from the figure, the power supply WD is capable of (iv) the reference gate VBG1, the gate source voltage I VGS1 ' of the transistor 0, and the sum of the source-drain driving voltages of the transistor lu, due to the transistor 12() __Miscellaneous light difference 1 needs to be greater than the threshold voltage value, therefore, if desired Lowering the supply voltage VDD can reduce the threshold voltage by adjusting the component process, but this will increase the production cost. 201248351 In addition, by the conventional technology 参考# reference 赖 ( (4) in most of the energy band generated with the temperature _ The minimum value of the gap can be from 25 volts, so the supply in the figure is Lai Liu VDD = 1 25 + ν . GSl + V 〇 v! (-- GM is about 2.1 volts). Second: ΓΙ: ΓΙ0 ° It is not effective in the production cost and the environment with low supply voltage for dirty. The bandgap reference circuit 1Μ should be applied to the component f path. The other reference circuit 1GG must use the higher cost of the lost mine: On the other hand, if the cost is better than the (four) component process to implement the band gap production, then the bandgap reference circuit needs to be applied to the higher supply voltage. [Inventive content] The moxibustionist ϋ明Γ- An energy band gap with a folded spliced circuit can reduce the supply voltage without using a relatively low cost, low threshold voltage fish oxygen half field effect transistor process. Circuit and = bandgap reference voltage generating unit. The operational amplifying circuit comprises a folding stacking, a large Hx, and a recording, wherein the amplification is provided according to the voltage of the -terminal end of the stacked operational amplifier, and the voltage is applied to the specific terminal. Corresponding to the current state of the first current output; the energy band gap 5 201248351 reference voltage generating unit, the furnace_amplifying circuit, wherein the band gap reference voltage generating unit operates according to the _ _ _ _ _ _ The boosting voltage is used as a bandgap reference voltage. The invention further discloses a method for generating a bandgap reference voltage, comprising: using a -folding splicing operation to provide a current output; according to the touch-tie operational amplifier The medium-specific end-off county generates a lion voltage; and uses a bandgap reference voltage generating unit to operate according to the current state of the __龙 and the current output, so that the auxiliary voltage is used as the energy bandgap reference voltage . Embodiments Fig. 2 is a schematic view showing an embodiment of the present invention. The bandgap reference circuit 2A includes, but is not limited to, an operational amplifier circuit 2〇5 and an energy bandgap reference voltage generating unit 230, wherein the operational amplifier circuit 2〇5 includes an ergonomic operational amplifier and an auxiliary unit 220 . The current output ιττ provided by the folded spliced operational amplifier 21 能 to the bandgap reference voltage generating unit 230 may have different current states (for example, a change in current state ST (I0UT) due to a change in degree), and then through folding The operational amplifier 210 is cascaded to generate a specific terminal voltage Vx corresponding to the current state 3. The auxiliary unit 220 is used to assist in driving the bandgap reference voltage generating unit wo and to amplify the specific terminal voltage vx and The auxiliary voltage Va to the bandgap reference voltage generating unit 230 is provided according to the specific end point voltage Vx to stabilize the band gap reference voltage of the bandgap reference voltage generating unit 230, in other words, the band gap reference electric dust generating unit mo is based on The current state ST(I0UT) operates with the auxiliary voltage VA, and the auxiliary voltage 乂6 is used as the required bandgap reference voltage of 201248351. In order to supply the lower reference voltage WD to the bandgap reference circuit, this embodiment is advantageous. Laying the stacked circuits to reduce the voltage headroom loss. Figure 3 is a schematic diagram of another embodiment of the invention. Based on the architecture of Figure 2, The bandgap reference circuit 3GG includes (but is not): an operational amplifier circuit 3() 5, a bandgap reference voltage generating unit 330, and a trimming resistor 340, wherein the operational amplifier circuit 3〇5 includes a folded cascode operational amplifier 310 and The auxiliary unit 32. The folded stacked operational amplifier 310 includes a -p type transistor current source 312 and an N type transistor current source. The current source 312 includes a -th current source unit 313 and a second current source unit 314. In addition, the first current source unit 313 includes a plurality of transistors 匕 and 匕, and the second current source unit 314 includes a plurality of electric Mp3|1|P4, and the sources of the pads ρι#ρ2 are used to receive the reference voltage VDD. The gates of P1 and p2 are all connected to the pole of p3, and the drains of P1 and P2 are respectively coupled to the sources of J>3 and h and output a first current output (in the present example) The first current output is the above current output! (4), and includes currents 1! and 12. In addition, the above τ will have different current states st(iout), for example, current & And the magnitude relationship between the currents). In addition to 'p3 and p4 The gate is used to receive the predetermined voltage Vp2, the immersion of p4 is a specific terminal NP (which has a specific terminal voltage Vx), and the second output of the < and the unequal output of p4 (in this embodiment) The second current output includes a current ^ and ^). The current source 315 includes a plurality of transistors Νι, N2, n3, and n4, wherein % and N2; and the poles are respectively connected to the & The second current output, % 201248351 heterogeneous source core = one predetermined - auxiliary early 7 〇 32 〇 contains - p type MOS half field effect transistor == reference voltage, the pole _ at a specific end point w two == point Voltage VX, and its incompetent connection to the fine-tuning resistor Temple knows vf乍 for the (four) coffee, (four) tender 34 = 1 help the electric gap reference voltage terminal NB to fine-tune the energy band gap micro can be a choice Sexual components. No. _ resistor 340 in most bandgap reference voltage output is about i & volts, therefore, lion (10) is 〇〇 =. Its phase ===:· 汲 驱 驱 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The numerical values are for illustrative purposes only and are not intended to be used as the J of the present invention; the voltage of the present invention does not imply the circuit of the above embodiment, for example, a series-connected-pair N-type gold-oxygen effect transistor in a folded lapped operational amplifier Then, a p-type gold oxygen + field effect electric power 4·Ι>5 is added, and the addition-f_Qi#Q2 change is in accordance with the spirit of the present invention. In addition, the transistor (4) xf is replaced by the N-type half-field U-body, and the closed-end and source-parts of the 201248351 body are connected to the specific terminal NP and the bandgap reference voltage terminal. He, and the pole of the transistor, are used to receive the reference voltage. In addition, the auxiliary unit I20 can select an optional component. Therefore, the auxiliary unit 320 is omitted and the specific secret NP is switched to the bandgap reference voltage terminal. At this time, the auxiliary light VA for the reference voltage is the shape end. I rely on νχ. Bandgap Reference The flow of an embodiment of the method for generating a bandgap reference sample is the same as the result of the second step, and the step is not to follow the method shown in Fig. 4 to generate a bandgap reference voltage. Applied to Figure 2 and Figure 3, month b bandgap reference circuit 2〇〇, 3〇〇, and can be summarized as follows: Clear __ weaving - current output; / marriage. According to the folding erected operational amplifier a specific terminal is used to generate an auxiliary voltage; and a step 4〇6 is performed using a bandgap reference voltage generating unit to operate according to the auxiliary voltage and the current state of the current output, so that the auxiliary voltage is used as a Bandgap reference voltage. The endpoint = plant 4 can be received using the control terminal of a (four) transistor to generate the auxiliary voltage. Since the skilled artisan can understand each step in FIG. 4 according to the easy band gap reference circuit 200 shown in the upper== diagram and the third diagram, the present invention provides a capability according to the above-mentioned 201248351. The bandgap reference circuit device and related methods can reduce the reference voltage by reducing the reference voltage by the low-threshold low-voltage recording half-field transistor process, which can greatly improve the circuit requirements and the cost of the process. The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should fall within the scope of the present invention. [Simple description of the drawing] Fig. 1 is a circuit diagram of the BiOkaw bandgap reference circuit. Figure 2 is a schematic diagram of the implementation of the band gap reference circuit. Figure 3 is a circuit diagram of another embodiment of the bandgap reference circuit of the present invention. Figure 4 is a flow diagram of an embodiment of a method of generating a bandgap reference voltage in accordance with the present invention. [Main component symbol description] Bandgap reference circuit current source 5 p-type gold-oxygen half-field effect transistor N-type gold-oxygen half-field effect transistor bandgap voltage generating unit N-type bipolar transistor resistance trimming resistor operation amplifying circuit 100 , 200, 300 110
11 卜 112、P】、p2、p3、P4、P 120、％、N2、N3、N4 130、230、330 131 > 132 > Q! ' Q2 133、134、R!、R2 140、340 205 ' 305 201248351 210、310 摺疊疊接運算放大器 220 ' 320 輔助單元 312 P型電晶體電流源 313 第一電流源單元 314 第二電流源單元 315 N型電晶體電流源 1111 卜 112, P], p2, p3, P4, P 120, %, N2, N3, N4 130, 230, 330 131 > 132 > Q! ' Q2 133, 134, R!, R2 140, 340 205 ' 305 201248351 210, 310 folding lapped operational amplifier 220 ' 320 auxiliary unit 312 P-type transistor current source 313 first current source unit 314 second current source unit 315 N-type transistor current source 11