TW201237950A - Substrate treatment apparatus - Google Patents
Substrate treatment apparatus Download PDFInfo
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- TW201237950A TW201237950A TW100134597A TW100134597A TW201237950A TW 201237950 A TW201237950 A TW 201237950A TW 100134597 A TW100134597 A TW 100134597A TW 100134597 A TW100134597 A TW 100134597A TW 201237950 A TW201237950 A TW 201237950A
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- nozzle
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- pure water
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
201237950 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種對基板進行處理之基板處理裝置。於作 為處理對象之基板中,例如包含有半導體晶圓、液晶顯示裝 置用基板、電漿顯示用基板、FED(Field Emissi〇n Display, 場發射顯示器)用基板、光碟用基板、磁碟用基板、磁光碟 用基板、光罩用基板、陶瓷基板、太陽能電池用基板等。 【先前技術】 於半導體裝置或液晶顯示裝置等之製造步驟中,對半導體 晶圓或液晶顯示裝置用玻璃基板等基板使用處理液進行處 理。對基板逐片地進行處理之單片式基板處理裝置,例如具 備有水平地保持基板並加以旋轉之旋轉卡盤(spin chuck)、 及向由;k轉卡盤所保持基板之上表面吐出處理液之噴嘴。喷 嘴係保持於水平延伸之噴嘴臂之前端部。喷嘴臂係連結於喷 噶擺動機構。喷嘴擺動機構係使喷嘴及喷嘴臂圍繞設置於旋 轉卡盤側方之垂直的旋轉軸線旋轉。 當此基板處理裝i中自t嘴對基板之上I面供給處理液 時,將喷嘴及喷嘴臂配置於由旋轉卡盤所保持基板之上方。 而且,藉由旋轉卡盤使基板圍繞垂直轴線旋轉。然後,自喷 备向旋轉狀態之基板之上表面吐出處理液。藉此’自嘴嘴對 基板之上表面供給處理液。自喷嘴對基板之處理液之供給結 束後,噴嘴擺動機構使噴嘴及喷嘴臂自基板之上方退避。 100134597 201237950 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2〇1〇_177371號公報 【發明内容】 處縣置中使用處雌進行處歡情科,存在處 之ί:Τ裝置之噴嘴臂上之情況。噴嘴臂係於基板 之上方移動。因此,若於噴嘴臂上附著有處理液之狀 動喷嘴臂,則存在附著於嘴嘴臂之處理液被甩落而落; 上之情況。例如,存在處理液之錄附著於噴嘴臂,錢喷 嘴臂移動時此附著之處理液掉落於基板上之情況。若處理夜 掉落於已進行藥液處理之基板上,職液處理之均勻性合降 低。又’若處理液掉落於已進行乾燥處理之基板上 生乾燥不良。 曰赞 因此,本發明係提供-種具備除液效果較佳 板處理裝置。 、薄#之基 本發明之基板處理裝置包含有:喷嘴,其 … 處理之處理流體,·及喷嘴臂’其保持上述噴嘴,料 平面之長度方向延伸;且與上述長度方向正交之上述臂 之至少-料之正交咖,包含有在切正⑽ 上方之頂部、位於比上述頂部更側方之侧部 :: 連續下降至上仙料止之均簡部。 ㈣ 根據此構成,保持喷嘴之喷嘴臂係沿著水平面朝長度方向 100134597 4 201237950 :伸1嘴臂之至少-部分之正交剖面(與長度方向正交之 :面)’包含有自頂部連續下降至側部為止之上側傾斜部。 立於上側傾斜部連續地下降,故即使處理液附著於上侧傾斜 部,此處理液亦會沿著上侧傾斜部向下料。然後,此處理 液自噴嘴臂、落下而被去除。即,即使處理液附著於喷嘴臂, 此處理液亦可於短時間内自噴嘴f去除。因此,可減少處理 液對於喷嘴臂之殘留量。 於本發明之-實施形態中,上述正交剖面進一步包含有在 上述正交剖面中位於最下方之底部、及自上述側部連續下降 至上述底部為止之下侧傾斜部。 根據此構成’喷嘴臂之正交剖祕包含有自㈣連續下降 至底部為止之下側傾斜部。由於下側傾斜部連續下降,故即 使處理液附著於下側傾斜部,此處理液亦會沿著下侧傾斜部 向下流動。然後,此處理液自噴嘴臂落下而被去除。因此, 可減少處理液對於喷嘴臂之殘留量。 於本發明之一實施形態中,上述正交剖面包含有在上述正 交剖面中位於最側方之左右一對之側端,其中一側端包含上 述頂部’而上述側部包含另-側端’且上述上側傾斜部係自 上述一側端連續下降至上述另一側端為止。 根據此構成,-側端包含頂部,而側部則包含與一側端為 相反側之另-側端。上側傾斜部係自頂部延伸至側部。因、、 此,上側傾斜部自-側端延伸至另一側端為止。心正交1 Ϊ00134597 5 201237950 面之上部係自一側細延伸至另一側端為止,且越接近另一側 端越下降。因此,附著於正交剖面上部之處理液會向共用之 側端(另一側端)流下。藉此,可使附著於正交剖面上部之液 滴彼此結合’並藉由其自身重量而落下。因此,可減少處理 液對於噴嘴臂之殘留量。 本發明之-實施形態之基板處理裝置,係進一步包含有向 上述喷嘴臂之下部吐出氣體之第丨氣體噴嘴。 根據此構成,自第1氣體噴嘴所吐出之氣體係對喷嘴臂之 下部嗔吹。如上述,_於噴嘴f之處理液會沿著喷嘴臂向 喷嘴臂之處理液吹飛而有噴吹。藉此,可將附著於 理液對於喷嘴臂之祕加財除。因此,可減少處 上述第丨氣體噴嘴較佳 氣體沿著上料料^ 自上述第1氣財嘴所吐出之 式構成。 $上述嘴嘴臂之長度方向流動之方 根據此構成’自第]$ 朝長度方向流動。因此t 、嘴所吐出之氣體係沿著喷嘴臂 之範圍會擴大。藉此,可自第1氣體喷嘴时嘴臂喷吹氣體 可減少處理液對於噴嘴廣之範®去除處理液。因此, 上述第1氣體噴嘴亦可以: 喷嘴臂之下部吐出氣體 上述嘴嘴臂之侧方朝向上述 _之方式構成。於此情形時,上述上側 100134597201237950 VI. Description of the Invention: [Technical Field] The present invention relates to a substrate processing apparatus for processing a substrate. The substrate to be processed includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for plasma display, a substrate for FED (Field Emissive Display), a substrate for a disk, and a substrate for a disk. A substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, or the like. [Prior Art] In a manufacturing process of a semiconductor device or a liquid crystal display device, a substrate such as a glass substrate for a semiconductor wafer or a liquid crystal display device is treated with a processing liquid. The monolithic substrate processing apparatus that processes the substrate one by one, for example, includes a spin chuck that holds the substrate horizontally and rotates, and a discharge chuck on the upper surface of the substrate held by the k-turn chuck Liquid nozzle. The nozzle is held at the front end of the horizontally extending nozzle arm. The nozzle arm is coupled to the squirting mechanism. The nozzle swinging mechanism rotates the nozzle and the nozzle arm about a vertical axis of rotation disposed on the side of the rotating chuck. When the processing liquid is supplied from the nozzle to the I surface of the substrate in the substrate processing apparatus i, the nozzle and the nozzle arm are disposed above the substrate held by the spin chuck. Moreover, the substrate is rotated about a vertical axis by rotating the chuck. Then, the processing liquid is discharged from the surface of the substrate to the rotating state. Thereby, the processing liquid is supplied from the mouth to the upper surface of the substrate. After the supply of the processing liquid to the substrate by the nozzle is completed, the nozzle swinging mechanism retracts the nozzle and the nozzle arm from above the substrate. [Patent Document 1] [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei 2〇1〇_177371 [Invention] The use of a female in the county is used for the love department, and there is a place of ί: The condition on the nozzle arm of the device. The nozzle arm moves over the substrate. Therefore, if the nozzle arm of the treatment liquid is attached to the nozzle arm, the treatment liquid adhering to the nozzle arm is dropped and dropped. For example, there is a case where the recording liquid is attached to the nozzle arm, and the attached processing liquid falls on the substrate when the money nozzle arm moves. If the treatment night falls on the substrate on which the chemical treatment has been performed, the uniformity of the occupational fluid treatment is lowered. Further, if the treatment liquid is dropped on the substrate which has been subjected to the drying treatment, the drying is poor. Therefore, the present invention provides a plate processing apparatus having a liquid removal effect. The substrate processing apparatus of the basic invention of the thin invention includes: a nozzle, a processing fluid for processing, and a nozzle arm that holds the nozzle and extends in the longitudinal direction of the material plane; and the arm that is orthogonal to the longitudinal direction At least the orthogonal coffee of the material, including the top portion above the tangent (10), on the side more lateral than the top:: Continuously descending to the upper portion of the upper cent. (4) According to this configuration, the nozzle arm of the holding nozzle is oriented along the horizontal plane in the longitudinal direction 100134597 4 201237950: at least a part of the orthogonal section of the one-arm arm (orthogonal to the length direction: face) includes continuous from the top The upper side inclined portion is lowered to the side portion. Since the upper inclined portion is continuously lowered, even if the treatment liquid adheres to the upper inclined portion, the treatment liquid is discharged downward along the upper inclined portion. Then, the treatment liquid is removed from the nozzle arm and dropped. That is, even if the treatment liquid adheres to the nozzle arm, the treatment liquid can be removed from the nozzle f in a short time. Therefore, the residual amount of the treatment liquid to the nozzle arm can be reduced. In the embodiment of the present invention, the orthogonal cross section further includes a lowermost bottom portion in the orthogonal cross section and a lower side inclined portion continuously descending from the side portion to the bottom portion. According to this configuration, the orthogonal section of the nozzle arm includes the lower side inclined portion from the (four) continuous lowering to the bottom. Since the lower inclined portion continuously descends, even if the treatment liquid adheres to the lower inclined portion, the treatment liquid also flows downward along the lower inclined portion. Then, the treatment liquid is dropped from the nozzle arm to be removed. Therefore, the residual amount of the treatment liquid to the nozzle arm can be reduced. In one embodiment of the present invention, the orthogonal cross section includes a pair of right and left side ends on the most lateral side of the orthogonal cross section, wherein one side end includes the top portion and the side portion includes another side end And the upper inclined portion is continuously lowered from the one side end to the other side end. According to this configuration, the - side end includes the top portion, and the side portion includes the other side end opposite to the one side end. The upper inclined portion extends from the top to the side. Therefore, the upper inclined portion extends from the side end to the other side end. The heart is orthogonal 1 Ϊ 00134597 5 201237950 The upper part of the face extends from one side to the other side, and the closer it is to the other side, the lower. Therefore, the treatment liquid attached to the upper portion of the orthogonal section flows down to the side end (the other end) of the common side. Thereby, the liquid droplets attached to the upper portion of the orthogonal cross section can be bonded to each other and dropped by their own weight. Therefore, the residual amount of the treatment liquid to the nozzle arm can be reduced. The substrate processing apparatus according to the embodiment of the present invention further includes a second gas nozzle that discharges gas to the lower portion of the nozzle arm. According to this configuration, the gas system discharged from the first gas nozzle blows the lower portion of the nozzle arm. As described above, the treatment liquid of the nozzle f is blown along the nozzle arm to the treatment liquid of the nozzle arm to be blown. Thereby, the attachment to the chemical liquid can be added to the secret of the nozzle arm. Therefore, it is possible to reduce the configuration in which the gas of the second gas nozzle is discharged along the upper material from the first gas nozzle. The side of the mouth arm that flows in the longitudinal direction flows according to this configuration 'from the first}$ in the longitudinal direction. Therefore, the gas system spouted by the mouth and mouth will expand along the range of the nozzle arm. Thereby, the gas can be blown from the nozzle arm from the first gas nozzle, and the treatment liquid can be reduced to the nozzle. Therefore, the first gas nozzle may be configured such that the gas is discharged from the lower portion of the nozzle arm to the side of the nozzle arm. In this case, the above upper side 100134597
S 201237950 傾斜部較佳為朝向來自上述第丨氣體喷嘴之氣體所喷吹之 侧下降。 9 根據此構成,自第1氣體喷嘴所吐出之氣體係對喷嘴臂之 下部自侧方喷吹。上側傾斜部係朝向來自第i氣體喷嘴之氣 體所喷吹之側下降。因此,附著於上侧傾斜部之處理液係朝 向來自第1氣體喷嘴之氣體所噴吹之側流下。換言之,自第 1氣體喷嘴所吐出之氣體係向附著於上側傾斜部之處理液 所集中之位置倾。因此,討有效祕去_著於上側傾 斜部之處理液。 上述喷嘴臂較佳為由疏水性材料所形成。根據此 於喷嘴臂料疏水性㈣所形成,故料臂具有疏水性。因 此’相較於喷嘴臂為親水性之情況,附著於喷嘴臂之# 可於短時間内且以較小之力自噴嘴臂去除。而且,由=液 液會受到排斥’故可減少保持於喷嘴臂之處理液之旦:处理 此,可進一步減少處理液對於噴嘴臂之殘留量。里。因 本發明之-實施形態之基板處理裝置,係進里—h 上述喷嘴臂之上表面吐出純水之純水嘴嘴。有向 根據此構成,對嘴嘴臂之上表面供給自純水嘴嘴 水。藉此,可錢著於噴対上表面之微料異 ,、4 沖洗掉。因此,可防止附著㈣嘴=理液 掉落於基板上,使基板被科。而且,如^或處理液 臂所供給1水會•料tr喷嘴 100134597 ^ η 201237950 純 嘴臂去除,故可抑制或防止在結束對噴嘴臂供給純水後, 水自喷嘴臂掉落至基板上。 於本發明之—實施形態中,上述喷嘴包含有配置於比上述 喷紫臂更下方之噴嘴下部。於此情形時,上述基板處理裝 置’較佳為進—步包含有向上述喷嘴下部吐出氣體之第2 氣體喷嘴。 ^此構成,自第2氣體喷嘴所吐出之氣體係對位於比嘴 臂承方之噴嘴下部喷吹。由於喷嘴下部係配置於比脅嘴 移動著於喷嘴外表面之處理液、或經由噴嘴臂而 、鳥之處理液會向噴嘴下部流下。因此 喷嘴所吐出之氣體係讀 可有效率地麵處理液。中之位置料°因此’其 ==之—實施形態中,上述喷嘴臂為包含保持上述喷 自上述第】氣㈣嘴述第1氣體噴嘴係以 述前端部之方出之乳體朝自上述基端部朝向上 自上m Γ 式所構成,上述第2氣體噴嘴係以 以苐2氣體喷嘴所吐 ’、 述前端部之方向流動之方式所:朝自上述基端部朝向上 朝自自第1氣體嘴嘴所吐出之氣體係沿著噴嘴臂 朝自·部朝向前端部之方向 嘴所吐出之氧俨孫n m也自第2氣體噴 方向流動Γ自各°4邹朝自基端部朝向前端部之 札體賀嘴所吐出之氣體係朝向相同之方 100134597 〜乃S 201237950 Preferably, the inclined portion is lowered toward the side from which the gas from the second gas nozzle is blown. According to this configuration, the gas system discharged from the first gas nozzle blows the lower portion of the nozzle arm from the side. The upper inclined portion is lowered toward the side from which the gas from the i-th gas nozzle is blown. Therefore, the treatment liquid adhering to the upper inclined portion flows downward toward the side from which the gas from the first gas nozzle is blown. In other words, the gas system discharged from the first gas nozzle is inclined toward the position where the treatment liquid adhering to the upper inclined portion is concentrated. Therefore, it is effective to remove the treatment liquid from the upper inclined portion. The nozzle arm is preferably formed of a hydrophobic material. According to this, the hydrophobicity of the nozzle arm material (4) is formed, so that the material arm is hydrophobic. Therefore, the # attached to the nozzle arm can be removed from the nozzle arm in a short time and with a small force compared to the case where the nozzle arm is hydrophilic. Further, since the liquid is repelled, the treatment liquid held in the nozzle arm can be reduced: by this treatment, the residual amount of the treatment liquid to the nozzle arm can be further reduced. in. According to the substrate processing apparatus of the embodiment of the present invention, the pure water nozzle for discharging pure water on the upper surface of the nozzle arm is incorporated. Directional According to this configuration, the upper surface of the mouth and mouth is supplied with water from the pure nozzle. In this way, the money can be washed on the upper surface of the sneeze, and 4 is washed away. Therefore, it is possible to prevent the adhesion (four) mouth = the chemical liquid from falling on the substrate, so that the substrate is exposed. Moreover, if the water supplied by the treatment arm is supplied with water, the nozzle is 100134597 ^ η 201237950. The pure arm is removed, so that the water can be prevented from falling from the nozzle arm to the substrate after the end of supplying pure water to the nozzle arm. . In an embodiment of the invention, the nozzle includes a lower portion of the nozzle disposed below the spray arm. In this case, the substrate processing apparatus ‘ preferably further includes a second gas nozzle that discharges gas to the lower portion of the nozzle. In this configuration, the gas system discharged from the second gas nozzle is sprayed on the lower portion of the nozzle than the nozzle arm. Since the lower portion of the nozzle is disposed in the treatment liquid that moves on the outer surface of the nozzle than the nozzle, or through the nozzle arm, the treatment liquid of the bird flows down the nozzle. Therefore, the gas system discharged from the nozzle can read the ground treatment liquid efficiently. In the embodiment, the nozzle arm is configured to include the emulsion from which the first gas nozzle is sprayed from the first gas nozzle to the front end portion. The base end portion is formed upward from the upper m Γ type, and the second gas nozzle is configured to flow in the direction of the tip end portion by the 苐2 gas nozzle: toward the upper end from the base end portion The gas system discharged from the first gas nozzle is discharged from the mouth of the nozzle arm toward the tip end portion of the nozzle arm, and flows from the second gas jet direction from the second gas direction toward the base end. The gas system spit out from the front end of the body is facing the same side 100134597 ~
S 201237950 向流動。因此,其可抑制或防止自第i氣體喷嘴所吐出之氣 體與自第2氣體喷嘴所吐出之氣體發生碰撞,而導致自各氣 體喷嘴所吐出氣體之衝力減弱。藉此,其可確實地去除附著 於喷嘴及喷嘴臂上之處理液。 本發明之一實施形態之基板處理裝置進一步包含有:基板 保持手段,其對基板進行保持;及移動手段,其使上述喷嘴 臂在上述喷嘴位於上述基板保持手段所保持的基 之處理位置、與上述喷嘴自上述基板保持手段所保持的基板 之上方退避之待機位置間移動。於此情形時,上述第丨氣體 喷嘴較佳為以氣體向位於上述待機位置之上述噴嘴臂之下 部吐出之方式所構成。 根據此構成,藉由使移動手段之驅動力傳遞至喷嘴臂,喷 嘴臂會於處理位置與待機位置之間移動。自第】氣體喷嘴所 吐出之氣體係向位於待機位置之噴嘴臂之下部噴吹。因此, 其可將第1氣體噴嘴配置於待機位置。即,第i氣體嘴嘴亦 可不以與喷嘴臂-起移動之方式所構成。因此,其可抑制或 防止包含噴嘴臂之可動部之大型化。 上述喷嘴臂之上述至少-部分,較佳為包含有在上述處理 位置中位於上述基板保持手段所保持的基板之上方的部分。 根據此構成’在處理位置上位於由基板保持手段所保持基 板之上方的部分具有正交剖面。因此,即使處理液附著於此 部分’此處理液亦可於短時間内去除。因此,即便使喷嘴臂 100134597 9 201237950 於基板上移動’亦可抑制或防止處理液自喷嘴臂掉落於基板 上。藉此’可抑制或防止基板污染或品質低下。 【實施方式】 以下參照附圖而對本發明之實施形態進行詳細說明。 圖1係表不本發明之第i實施形態之基板處理裝置i之概 略構成的魏圖。圖2係表示本發明之第丨實施形態之基板 處理裝置1之概略構成的俯視圖。 基板處理裝置1係對基板w逐片地進行處理之單片式基 板處理裝置。基板處縣置i具備有水平_持基板w且S 201237950 is moving. Therefore, it is possible to suppress or prevent the gas ejected from the i-th gas nozzle from colliding with the gas ejected from the second gas nozzle, and the momentum of the gas ejected from each gas nozzle is weakened. Thereby, it can surely remove the treatment liquid adhering to the nozzle and the nozzle arm. A substrate processing apparatus according to an embodiment of the present invention further includes: a substrate holding means for holding the substrate; and a moving means for positioning the nozzle arm at a processing position of the base held by the substrate holding means The nozzle moves between standby positions retracted from above the substrate held by the substrate holding means. In this case, it is preferable that the second gas nozzle is configured such that gas is discharged to the lower portion of the nozzle arm located at the standby position. According to this configuration, the nozzle arm moves between the processing position and the standby position by transmitting the driving force of the moving means to the nozzle arm. The gas system discharged from the first gas nozzle is blown toward the lower portion of the nozzle arm at the standby position. Therefore, the first gas nozzle can be disposed at the standby position. That is, the i-th gas nozzle may not be configured to move with the nozzle arm. Therefore, it is possible to suppress or prevent an increase in the size of the movable portion including the nozzle arm. Preferably, at least the portion of the nozzle arm includes a portion above the substrate held by the substrate holding means in the processing position. According to this configuration, the portion located above the substrate held by the substrate holding means at the processing position has an orthogonal cross section. Therefore, even if the treatment liquid adheres to this portion, the treatment liquid can be removed in a short time. Therefore, even if the nozzle arm 100134597 9 201237950 is moved on the substrate, the treatment liquid can be suppressed or prevented from falling from the nozzle arm on the substrate. Thereby, substrate contamination or quality deterioration can be suppressed or prevented. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 is a diagram showing a schematic configuration of a substrate processing apparatus i according to an i-th embodiment of the present invention. Fig. 2 is a plan view showing a schematic configuration of a substrate processing apparatus 1 according to a third embodiment of the present invention. The substrate processing apparatus 1 is a one-chip substrate processing apparatus that processes the substrate w one by one. The substrate at the substrate is provided with a level _ holding substrate w and
加以旋轉讀轉讀2、向岭轉切2所㈣之基板W 之上表面吐出處理液之噴嘴3、保持嘴嘴3之喷嘴臂4、配 置於旋轉卡盤2上方之遮斷板5、及對收容此等構成2〜5 之處理室6進行劃分之隔離壁(未圖示)。而且,基板處理裝 L具備有對基板處理裝所設置裝置之動作糾之開閉 進行控制之控制裝置7。 奴轉卡盤2包s有水平地保持基板w且可圍繞通過該基 板W中心之垂直軸線旋轉之圓盤狀旋轉底座㈣n 8、 及使此旋轉底座8圍繞垂直軸賴轉之旋轉馬達㈣η 她09。旋轉包2可為财平方向鱗基板W而水平地 保持該基板式錢,村為—憎元件形成 面即基板W之背面(下表面)而水平地保持該基板w之真空 式卡盤。於W實施形態中’旋轉卡盤2例如為夾持式夹盤。 100134597 201237950 喷嘴3係藉由使液體與氣體發生碰撞而生成複數滴液 滴,且向基板W吐出所生成之複數滴液滴之雙流體喷嘴。 於第1實施形態中,將作為液體之一例之純水供給至噴嘴 3,並將作為氣體之一例之氮氣供給至喷嘴3。喷嘴3係以 其吐出口朝向下方之狀態配置於比旋轉卡盤2更上方。喷嘴 3並不限定於雙流體喷嘴,可為以連續流之狀態吐出處理液 之直管喷嘴(straight nozzle),亦可為吐出氮氣等氣體之喷 嘴。 喷嘴3係保持於喷嘴臂4之前端部20。噴嘴臂4係沿著 水平面朝長度方向D1延伸。如圖2所示,噴嘴臂4之基端 部21係連結於喷嘴旋轉機構1〇。噴嘴旋轉機構1〇係使喷 嘴3及喷嘴臂4圍繞設置於旋轉卡盤2侧方之垂直的噴嘴旋 轉軸線L1旋轉。噴嘴旋轉機構1〇係使喷嘴3及噴嘴臂4 在使喷嘴3位於旋轉卡盤2上方之處理位置(圖丨所示之位 置及圖2巾以實線所表枕位置)、與喷嘴3自旋轉卡盤2 上方退避之待機位置(圖2中以二點鏈線所表示之位幻之厂 水平地移動。於待機位置上配置有接住處理液之箱體曰 (P〇d)ll。箱體u為向上開啟 _ 加上開啟之Μ。箱體u係以 配置在待機位置時,位於噴嘴3下方之方式、, 遮斷板5係具有與基板w幾乎相同直 。 遮斷板5係以水平之姿勢由支軸®板狀構件。 於遮斷板升降機構13及遮斷板__ ^ 2係連詞 100134597 。遮斷板升降賴 201237950 構13係使遮斷板5及支軸12於遮斷板5之下表面接近於基 板W上表面之處理位置、與設置於處理位置上方之退避位 置(圖1所示之位置)之間升降。遮斷板旋轉機構14係使遮 斷板5及支軸12圍繞通過基板w中心之垂直輕線旋轉。支 軸12為1]筒狀。支轴12之内部空間係連接於朝垂直方向貫 通遮斷板5中央部之貫通孔15。第1配管16 _入至= 12内’第2配管17係連接於第1配管16。若介裂於第2 配管17之純水閥18被開啟,則自第2配管ο對第1配管 16供給純水,^純水閥18關,則對第丨配管μ之供給S 之純找會停止。對第1配管16所供給之純水係自構成口中 心軸喷嘴19之第丨配管16之下卿向基板〜之 央部吐出。 於自中心軸喷嘴19對基板w供給處理液時,例如,藉由 控制裝置7控制旋轉馬達9,而使保持於_卡盤2之 W旋轉。祕’控㈣置7於使遮斷板5位於處理位置土之 狀態下,使處雌自中叫喷嘴19向旋轉狀態之基板以 上表面吐出。自中心轴噴嘴19所吐出之處理液於供給至基 板W之上表面中央部後,藉由因基板w之旋轉所產生之離 心力沿著基板W之上表面向外擴散。藉此,將處理液供給 至基板w之上表面整個區域,而對基板w進行處理。 又’於自喷嘴3對基板 制裝置7控制旋轉馬達9,Rotating the reading and reading 2, cutting the nozzle 3 of the processing liquid on the upper surface of the substrate W of the fourth (four), the nozzle arm 4 holding the nozzle 3, the blocking plate 5 disposed above the rotating chuck 2, and A partition wall (not shown) that divides the processing chambers 6 that accommodate these configurations 2 to 5. Further, the substrate processing apparatus L is provided with a control device 7 that controls opening and closing of the operation of the apparatus for mounting the substrate processing apparatus. The slave transfer chuck 2 packs s has a disk-shaped rotary base (4) n 8 horizontally rotating around the vertical axis passing through the center of the substrate W, and a rotary motor (four) η which rotates the rotary base 8 around the vertical axis 09. The rotary package 2 can hold the substrate type money horizontally in the horizontal plane of the scale board W, and the vacuum chuck of the substrate w is horizontally held by the back surface (lower surface) of the substrate W. In the embodiment of the invention, the rotary chuck 2 is, for example, a clamp chuck. 100134597 201237950 The nozzle 3 is a two-fluid nozzle that generates a plurality of droplets by colliding a liquid with a gas, and discharges the generated plurality of droplets onto the substrate W. In the first embodiment, pure water as an example of a liquid is supplied to the nozzle 3, and nitrogen gas as an example of a gas is supplied to the nozzle 3. The nozzle 3 is disposed above the spin chuck 2 with its discharge port facing downward. The nozzle 3 is not limited to the two-fluid nozzle, and may be a straight nozzle that discharges the treatment liquid in a continuous flow state, or may be a nozzle that discharges a gas such as nitrogen. The nozzle 3 is held at the front end 20 of the nozzle arm 4. The nozzle arm 4 extends in the longitudinal direction D1 along the horizontal plane. As shown in Fig. 2, the base end portion 21 of the nozzle arm 4 is coupled to the nozzle rotating mechanism 1A. The nozzle rotating mechanism 1 rotates the nozzle 3 and the nozzle arm 4 around a vertical nozzle rotation axis L1 provided on the side of the rotary chuck 2. The nozzle rotating mechanism 1 is configured such that the nozzle 3 and the nozzle arm 4 are disposed at a processing position above the rotating chuck 2 (the position shown in FIG. 2 and the position of the table in FIG. 2 in the solid line), and the nozzle 3 The standby position at which the spin chuck 2 is retracted (the phantom factory indicated by the two-point chain line in Fig. 2 moves horizontally. The box 曰 (P〇d) 11 that holds the processing liquid is disposed at the standby position. The casing u is upwardly opened _ plus the opening Μ. The casing u is disposed below the nozzle 3 when placed in the standby position, and the blocking plate 5 has almost the same straightness as the substrate w. In the horizontal position, the fulcrum plate slab member is used. The slab lifting mechanism 13 and the slab __ ^ 2 are connected to the slogan 100134597. The slab is lifted and lowered to the 201237950 frame 13 to make the louver 5 and the fulcrum 12 The lower surface of the blocking plate 5 is raised and lowered close to the processing position of the upper surface of the substrate W and the retracted position (the position shown in Fig. 1) provided above the processing position. The blocking plate rotating mechanism 14 is such that the blocking plate 5 is provided. And the support shaft 12 rotates around a vertical light line passing through the center of the substrate w. The support shaft 12 is 1] cylindrical. The support shaft 12 The internal space is connected to the through hole 15 that penetrates the center portion of the blocking plate 5 in the vertical direction. The first pipe 16_into the =12 is the second pipe 17 connected to the first pipe 16. If the second pipe is spliced to the second pipe When the pure water valve 18 of the 17 is opened, pure water is supplied to the first pipe 16 from the second pipe ο, and when the pure water valve 18 is closed, the pure supply of the supply pipe S of the second pipe μ is stopped. The pure water supplied from the 16th is discharged from the lower portion of the first pipe 16 constituting the port center nozzle 19 to the central portion of the substrate. When the processing liquid is supplied from the central axis nozzle 19 to the substrate w, for example, by the control device 7, the rotary motor 9 is controlled to rotate the W held by the chuck 2, and the key is set to 7 so that the shutter 5 is placed in the state of the processing position, so that the female is called the nozzle 19 in the rotated state. The processing liquid discharged from the central axis nozzle 19 is supplied to the central portion of the upper surface of the substrate W, and then spreads outward along the upper surface of the substrate W by the centrifugal force generated by the rotation of the substrate w. Thus, the treatment liquid is supplied to the entire upper surface of the substrate w, and the substrate w is processed. In the nozzle 3 from the control means 7 rotates the substrate manufactured by the motor 9,
W供給處理液時,例如,藉由控 使保持於旋轉卡盤2之基板W 100134597 201237950 叙轉然後,控制裝置7於使喷嘴3位於處理位置之狀, 使處理液自噴嘴3向旋轉狀態之基板w之上表面吐 第1實施形態中,ώ认& 由於噴嘴3為雙流體喷嘴,故複數滴 自喷嘴3向基板W之上表面喷射。藉此,躲板W之上夺 面供給處理液,而縣板W崎處理。 " 圖3係本發明之第1實施形態之喷嘴臂4及與此相關 成之側視圖。圖4係自圖3所示箭頭〜之方向所 嘴臂4之剖面圖。圖3役主 规条之賀 機位置之狀態。表示將噴嘴3及喷嘴臂4配置於待 喷嘴臂4係包含有前端部2G與基端部21之棒狀構件。 即’喷嘴臂4包含前端部2〇、基端部2卜 ㈣端部Μ之棒狀臂部22。料22朝長度方向D;;= 則端部—部21分別結合於之—端部中一 :喷嘴,於前端部20。前端部2。朝向自基端部21 幵之向且自臂部22之-端部朝下方延伸。噴嘴3為柱 且乂垂直之全勢保持於前端部20。喷嘴3包含自前端 朝下方延伸之喷嘴下部23。噴嘴下部23配置於比^ 知部21及臂部22更下方。又,基端部21藉由螺釘24安裝 於底座(base)25。噴嘴旋轉機構10之驅動力係經由底座25 傳遞至喷嘴臂4。前端部2G及臂部22係在處理位置上位於 由方疋轉卡盤2所保持基板w之上方之部分(參照圖幻。 喷嘴臂4係由疏水性材料所形成。作為疏水性材料,例如 100134597 13 201237950 I列舉聚四氟乙烯等氟樹脂。如圖4所示’臂部22具有包 表面26右側面27、左侧面28及v字狀之下表面29 ,五角形狀^正交剖面cu與長度方向D1正交之剖面)。臂 之正又口彳面CU,自臂部22之一端部至臂部22之另一 后而P為止為固定。即’正交剖面C卜自臂部22之-端部至 臂ΓΓ之另—部為止為相同形狀且相同大小(同形同大)。 邻22中,埋入有加強噴嘴臂4之棒狀之芯材刊。芯材 3〇例如由不鐵鋼所形成。而且,於臂部22之内部插入有對 ,嘴3供給液體之液體供給f 31、及對喷嘴3供給氣體之 乳收供給官32。芯材3G、液體供給管31及氣體供給管% 係於臂部22内朝長度方向m延伸。如圖3所示,液體供 。s 31及氣體供給官32自臂部22朝前端部π側突出,且 連接於嘴嘴3。 基板處理裝置1進一步包含有:對喷嘴臂4供給純水而對 噴。^ # 4進行清洗之第丨純水噴们3(純水喷嘴)及第2純水 喷亀34、及對噴嘴臂4供給氣體而去除附著於喷嘴臂4之 純水之第1氣體噴嘴35及第2氣體噴嘴36。如圖3所示, 第1純水喷嘴33及第2純水喷嘴34係配置於噴嘴臂4之基 端部21之附近。第丨純水噴嘴%係配置於喷嘴臂*之上方, 第2純水噴嘴34配置於喷嘴臂4之下方。而且,如圖4所 不,第1純水喷嘴33及第2純水喷嘴34係配置於通過關於 正交剖面C1之寬度方向(與長度方向m正交之水平方向) 100134597 14When W supplies the treatment liquid, for example, by controlling the substrate W 100134597 201237950 held by the spin chuck 2, the control device 7 causes the nozzle 3 to be in the processing position, and the processing liquid is rotated from the nozzle 3 to the state of rotation. In the first embodiment of the substrate w, in the first embodiment, the nozzle 3 is a two-fluid nozzle, so that a plurality of droplets are ejected from the nozzle 3 toward the upper surface of the substrate W. In this way, the board is supplied with the treatment liquid on the top of the board, and the county board W. " Fig. 3 is a side view of the nozzle arm 4 according to the first embodiment of the present invention. Fig. 4 is a cross-sectional view of the arm 4 in the direction of the arrow ~ shown in Fig. 3. Figure 3 shows the status of the machine's position. The nozzle 3 and the nozzle arm 4 are disposed in a rod-shaped member in which the nozzle arm 4 includes the distal end portion 2G and the proximal end portion 21. That is, the nozzle arm 4 includes a tip end portion 2A, a base end portion 2, and a fourth end portion of the bar-shaped arm portion 22. The material 22 is oriented in the longitudinal direction D;; = the end portion 21 is respectively coupled to one of the ends: a nozzle at the front end portion 20. Front end portion 2. The direction is from the base end portion 21 and extends from the end portion of the arm portion 22 downward. The nozzle 3 is a column and the full potential of the crucible is maintained at the front end portion 20. The nozzle 3 includes a nozzle lower portion 23 that extends downward from the front end. The nozzle lower portion 23 is disposed below the known portion 21 and the arm portion 22. Further, the base end portion 21 is attached to the base 25 by screws 24. The driving force of the nozzle rotating mechanism 10 is transmitted to the nozzle arm 4 via the base 25. The front end portion 2G and the arm portion 22 are located at a portion above the substrate w held by the square turn chuck 2 at the processing position (see the figure. The nozzle arm 4 is formed of a hydrophobic material. As a hydrophobic material, for example 100134597 13 201237950 I exemplifies a fluororesin such as polytetrafluoroethylene. As shown in Fig. 4, the 'arm portion 22 has a right side surface 27 of the bag surface 26, a left side surface 28, and a v-shaped lower surface 29, and a pentagonal shape ^ orthogonal section cu A section orthogonal to the longitudinal direction D1). The positive and negative face CU of the arm is fixed from one end of the arm portion 22 to the other end of the arm portion 22 and P. That is, the 'orthogonal section C' has the same shape and the same size (the same shape and the same size) from the end of the arm portion 22 to the other portion of the arm. In the adjacent portion 22, a rod-shaped core material sheet in which the nozzle arm 4 is reinforced is embedded. The core material 3 is formed, for example, of non-ferrous steel. Further, inside the arm portion 22, a liquid supply f 31 for supplying the liquid to the nozzle 3 and a milk supply and supply unit 32 for supplying the gas to the nozzle 3 are inserted. The core material 3G, the liquid supply pipe 31, and the gas supply pipe % extend in the longitudinal direction m in the arm portion 22. As shown in Figure 3, the liquid is supplied. The s 31 and the gas supply officer 32 protrude from the arm portion 22 toward the front end portion π side, and are connected to the nozzle 3. The substrate processing apparatus 1 further includes: supplying pure water to the nozzle arm 4 to be sprayed. ^ #4 The cleaning of the third pure water spray 3 (pure water nozzle) and the second pure water squirt 34, and the first gas nozzle 35 for supplying gas to the nozzle arm 4 to remove the pure water adhering to the nozzle arm 4. And the second gas nozzle 36. As shown in Fig. 3, the first pure water nozzle 33 and the second pure water nozzle 34 are disposed in the vicinity of the base end portion 21 of the nozzle arm 4. The second pure water nozzle % is disposed above the nozzle arm *, and the second pure water nozzle 34 is disposed below the nozzle arm 4. Further, as shown in Fig. 4, the first pure water nozzle 33 and the second pure water nozzle 34 are disposed in the width direction of the orthogonal cross section C1 (horizontal direction orthogonal to the longitudinal direction m) 100134597 14
S 201237950 中心之垂直的軸線CL1上。第i純水喷嘴33及第2純水嘴 嘴34係與喷嘴臂4 一起以圍繞喷嘴旋轉軸線u水平移動 之方式被保持。 。 如圖3所示,對第1純水喷嘴33及第2純水噴嘴34係經 由共用之純水閥37供給作為清洗液之純水。即,若純水閥 37開啟,則會對第丨純水喷嘴33供給純水,而自第丨純水 喷嘴33向喷嘴臂4吐出純水。而且,若純水閥37開啟,則 會對第2純水噴嘴34供給純水,而自第2純水噴嘴34向噴 嘴臂4吐出純水。因此,若純水閥37開啟,則會自第上純 水噴嘴33及第2純水喷嘴34吐出純水。 第1 ,、、屯水贺嘴33係以自第1純水喷嘴33例如水平地吐出 純水之方式配置。自第丨純水喷嘴33所吐出之純水係沿著 噴嘴臂4朝長度方向D1流動。另一方面,第2純水噴嘴% 係以自第2純水噴嘴34例如向斜上方吐出純水之方式配 置自第2純水贺嘴34所吐出之純水,係供給至噴嘴臂4 之下部。然後,供給至喷嘴臂4之純水,係沿著噴嘴臂4 • 朝長度方向D1流動。 - 又,如圖3所示,第1氣體噴嘴35及第2氣體噴嘴36 係配置於比噴嘴臂4更下方。第1氣體喷嘴35係配置於噴 嘴臂4之基端部21側,而第2氣體喷嘴36則配置於噴嘴臂 4之則食而部20侧。第1氣體噴嘴35係以於俯視時與喷嘴臂 4不重疊之方式配置(參照圖2)。又,第2氣體噴嘴36係配 100134597 15 201237950 置於育嘴下部23之附近。第2氣體喷嘴36係沿水平方向與 喷嘴下部23相對向。第1氣體喷嘴35及第2氣體喷嘴36 刀別由配置於待機位置之第1撐條(Stay)38及第2撐條39 所保持。因此,若喷嘴3及喷嘴臂4圍繞噴嘴旋轉軸線u 旋轉’則第1氣體噴嘴35及第2氣體喷嘴36就會相對於喷 嚆3及喷嘴臂4進行相對移動。 如圖3所示’對第i氣體噴嘴%及第2氣體嘴嘴%係經 由共用之氣體閥4G供給作為氣體之—例之氮氣。即,若氣 體閱4〇開啟,則會對第1氣體喷嘴35供給氮氣,而自第'i 氣體喷嘴35向喷嘴臂4吐出氮氣。而且,若氣體閥40開啟, 則會對第2氣體嘴嘴36供給氮氣,而自第2氣體喷嘴% 之第2氣體吐出口向噴嘴3吐岐氣。因此,若氣體閥40 開啟’就會自第1氣體噴嘴35及第2氣體喷嘴36吐出氮氣。 第1氣體喷嘴35係以自第1氣體噴嘴35例如向斜上方吐 出氮氣之方式配置。自第1氣體喷嘴%所吐出之氮氣係對 喷嘴臂4之下料吹。_,喷吹於噴嘴f4之氮氣係沿著 喷嘴臂4之下部朝長度方向⑴流動。而且,由於p氣體 喷嘴35及喷嘴臂4係以於俯視時不重疊之方式配置,故自 第i氣射嘴35所吐出之氮氣係自·對喷対*之下部 喷吹。另—方面,帛2氣體喷嘴36係以自第2氣體喷嘴36 例如水平地吐出氮氣之方式配置。自第2氣體噴嘴%所吐 出之氮氣係對噴嘴下部23噴吹。 100134597 201237950 圖5係將u 4之一部分加以放大之圖。以下,針對喷嘴臂 4之剖面(臂部22之正交剖面C1)進行詳細說明。 如上述,正交剖面C1例如為五角形狀。正交剖面C1包 含有上部41、右側部42(側部、另-側端)、左側部43(一侧 端)及下σΜ4。上部41、右側部42、左側部43及下部^ 刀别為上表面26、右側面27、左側面28及下表面29之- 部分。上部41相對於水平面傾斜。右側部42及左側部43 係朝上下方向延伸。下部44係相對於水平面傾斜。下部料 係例如為V字狀。 上^41包含左端45(頂部)、右端46、及連接左端45與 右端46之上侧傾斜部47。上部4ι之左端μ係在正交剖面 C1上位於最上方。因此’上部41之右端46係位於比上部 41之左端45更下太。1 右端46越下降 上側傾斜部47係以越接近上部41之 右知46越下降之方式連續地 作為頂部之上部41之左端45連斜^上側傾斜部47係自 之-部分之上部41之右端46為:下降至作為右側部42 角度例如為固定。上侧傾斜部°上側傾斜部47之傾斜 定,亦可連軌變化 1:1斜肖度並不PI定為固 形態之直線,亦可為 側傾斜部47可為如第1實施 又,下部二:向下凸出之曲線。 匕έ有左端48、右她」 右端49之間之下端5〇(底部 +、配置於左端48與 侧傾斜㈣、及連接右端49 4 48與下端5〇之左 ,00,34597 5〇之右側傾斜部52(下 201237950 側傾斜部)。下端50係在正交剖面Cl上位於最下方。因此, 下部44之左端48及右端49位於比下端50更上方。左側傾 斜部51係以自左側部43之一部分即下部44之左端48連續 下降至作為底部之下端50為止之方式連續地傾斜。同樣 地,右側傾斜部52係以自右側部42之一部分即下部44之 右端49連續地下降至作為底部之下端50為止之方式連續地 傾斜。左側傾斜部51及右側傾斜部52之傾斜角度可為固 定,亦可連續地變化。而且,左側傾斜部51之傾斜角度或 變化之狀態,可與右側傾斜部52相同,亦可為不同。下部 44係以正交剖面C1之寬度(朝左右方向之長度)越接近下端 50越減少之方式傾斜。 又,左側部43係自上部41之左端45朝下方延伸至下部 44之左端48為止。上部41之左端45、左側部43、及下部 44之左端48係在正交剖面C1上位於最左側方。上部41之 左端45為上部41之一部分,同時亦為左側部43之一部分。 同樣地,下部44之左端48為下部44之一部分,同時亦為 左側部43之一部分。左側部43係在正交剖面C1上位於最 側方之一側端。 又,右側部42係自上部41之右端46朝下方延伸至下部 44之右端49為止。上部41之右端46、右側部42、及下部 44之右端49係在正交剖面C1上位於最右側方。上部41之 右端46為上部41之一部分,同時亦為右側部42之一部分。 100134597 18 201237950 同樣地,下部44之右端49為下部44之一部分,同時亦為 右侧部42之一部分。右側部42係在正交剖面C1上位於最 側方之另一側端。即,右側部42及左側部43係相對於轴線 CL1相互配置於相反側之左右一對之側端。 第1氣體喷嘴35係以自喷嘴臂4之側方朝向喷嘴臂4之 下部吐出氣體之方式所構成。即,自第1氣體噴嘴35所吐 出之氮氣係自右側方對喷嘴臂4之右側面27或下表面29 喷吹。如上述,上側傾斜部47係以越接近上部41之右端 46越下降之方式傾斜。因此,上側傾斜部47係朝向來自第 1氣體喷嘴35之氣體所喷吹之側下降(參照圖8)。 圖6係用以說明清洗喷嘴3及喷嘴臂4時之動作之一例的 流程圖。圖7係用以說明對喷嘴臂4供給純水時之純水之動 作之一例的剖面圖。圖8係用以說明對喷嘴臂4供給氮氣時 之純水之動作之一例的剖面圖。以下,參照圖3。又,於以 下說明中,適當地參照圖1、圖6、圖7及圖8。 喷嘴3及喷嘴臂4之清洗,例如係於在旋轉卡盤2上未保 持基板W之狀態下所進行。又,於喷嘴3及喷嘴臂4之清 洗時,首先,例如自第1純水喷嘴33及第2純水喷嘴34 向喷嘴臂4吐出純水(圖6之步驟S卜第1純水供給步驟)。 具體而言,控制裝置7係在使喷嘴3及喷嘴臂4位於待機位 置之狀態下,開啟純水閥37,使純水自第1純水喷嘴33及 第2純水喷嘴34吐出。 100134597 19 201237950 自第1純水喷嘴33所吐出純水之大部分,係供給至臂部 22之上表面26,而自第1純水喷嘴33所吐出純水之一部分 則供給至臂部22之右側面27及左側面28。由於臂部22之 上表面26相對於水平面傾斜,故供給至臂部22上表面26 之純水,係一邊朝向前端部20沿著長度方向D1移動,一 邊沿著上表面26朝下方流動(參照圖7)。然後,抵達上部 41之右端46之純水,自上部41之右端46朝側方飛散、或 沿著右側面27朝下方流動。又,供給至右側面27及左側面 28之純水,係一邊朝向前端部20沿著長度方向D1移動, 一邊沿著右側面27或左側面28朝下方流動。然後,如圖7 所示,抵達右側面27下端(下部44之右端49)及左側面28 下端(下部44之左端48)之純水,自右側面27或左側面28 落下、或沿著下表面29朝下方流動。 另一方面,自第2純水喷嘴34所吐出純水之大部分係供 給至臂部22之下表面29,而自第2純水喷嘴34所吐出純 水之一部分係供給至臂部22之右侧面27及左側面28。如 上述,供給至右側面27及左側面28之純水係自右側面27 或左側面28落下、或沿著下表面29朝下方流動。另一方面, 由於臂部22之下表面29相對於水平面傾斜,故供給至臂部 22下表面29之純水一邊朝向前端部20沿長度方向D1移 動,一邊沿著下表面29朝下方流動(參照圖7)。即,供給至 臂部22下表面29之純水,係以向下端50移動之方式沿著 100134597 20 201237950 50之純水之一部分自噴嘴 下表面29流動。然後,抵達下端 臂4落下。 如此’自第1純水噴嘴33及第2純水噴嘴%所吐出之純 水,將供給至臂部22之上表面26、右側面27、左側面28 及下表面29。藉此,將附著於臂部22之微粒等異物或處理 液藉由純水沖洗掉。又,自第1純水噴嘴33及第2純水噴 嘴34供給至臂部22之純水,係朝向前端部2〇沿長度方向 D1流動。然後,抵達前端部2〇附近之純水,自臂部移 動至前端部20,並沿著前端部2〇或喷嘴3朝下方流動。藉 此’將附著於前端部20或喷嘴3之異物等藉由純水沖洗掉。 然後,自前端部20或喷嘴3落下之純水係藉由箱體u接住。 接著’自第1氣體喷嘴35及第2氣體喷嘴36向喷嘴3 及噴嘴臂4吐出氮氣(圖6之步驟S2、第!氣體供給步驟)。 具體而言,控制裝置7在使喷嘴3及喷嘴臂4位於待機位置 之狀態下’開啟氣體閥40,使氮氣自第1氣體喷嘴35及第 2氣體喷嘴36吐出。 自第1氣體喷嘴35所吐出氮氣之大部分,係對臂部22 之下表面29喷吹’而自第1氣體喷嘴35所吐出氮氣之一部 刀’則向臂部22之右側面27及左側面28喷吹(參照圖8)。 喷吹臂部22下表面29之氮氣係沿著下表面29朝前端部20 之方向於長度方向D1流動。又,噴吹臂部22之右側面27 及左側面28之氮氣係沿著右側面27或左側面28朝前端部 100134597 21 201237950 20之方向於長度方向D1流動。藉此,將附著於臂部κ之 下表面29、右側面27及左側面28之純水,藉由氮氣吹飛 而加以去除。 另一方面’自第2氣體嘴嘴36所吐出氮氣之大部分係對 嘴嘴下部23喷吹。又,自帛1氣體喷嘴35向臂部22吐出 且到達前端部20之附近之氮氣,係沿著前端部2()或喷嘴3 流動。因此,對前端部20噴吹自第丨氣體喷嘴乃所吐出之 氮氣,而對喷嘴3喷吹自第丨氣體噴嘴35及第2氣體喷嘴 36所吐出之氮氣。藉此,將附著於前端部或喷嘴3之純 水吹飛而加以去除。 女此藉由自第1氣體喷嘴35吐出氮氣,自臂部22之下 表面29右側面27及左側面28去除純水。自第1氣體喷 嘴35所吐出之氮氣雖幾乎未供給至臂部22之上表面%, 但供給至臂部22上表面26之純水,係因上表面26之傾斜 而流下,藉此自上表面26去除。因此,藉由自臂部22之下 表面29、右側面27及左側面28去除純水,可自整個臂部 22去除純水。而且,由於自第丨氣體喷嘴35所吐出之氮氣, 亦供給至喷嘴3及前端部20,故可有效率地去除附著於喷 嘴3及喷嘴臂4之純水。 接著’自中心轴喷嘴19向喷嘴3及喷嘴臂4之前端部20 吐出純水(圖6之步驟S3、第2純水供給步驟)。具體而言, 控制裝置7在使遮斷板5位於待機位置之狀態下,控制噴嘴S 201237950 The vertical axis CL1 of the center. The i-th pure water nozzle 33 and the second pure water nozzle 34 are held together with the nozzle arm 4 so as to horizontally move around the nozzle rotation axis u. . As shown in Fig. 3, the first pure water nozzle 33 and the second pure water nozzle 34 are supplied with pure water as a cleaning liquid via a common pure water valve 37. That is, when the pure water valve 37 is opened, pure water is supplied to the second pure water nozzle 33, and pure water is discharged from the second pure water nozzle 33 to the nozzle arm 4. When the pure water valve 37 is opened, pure water is supplied to the second pure water nozzle 34, and pure water is discharged from the second pure water nozzle 34 to the nozzle arm 4. Therefore, when the pure water valve 37 is opened, pure water is discharged from the upper pure water nozzle 33 and the second pure water nozzle 34. The first and third waters are arranged such that the pure water is horizontally discharged from the first pure water nozzle 33, for example. The pure water discharged from the second pure water nozzle 33 flows along the nozzle arm 4 in the longitudinal direction D1. On the other hand, the pure water discharged from the second pure water nozzle 34 is disposed in the second pure water nozzle 34 so that pure water is discharged obliquely upward from the second pure water nozzle 34, for example, and is supplied to the nozzle arm 4 Lower part. Then, the pure water supplied to the nozzle arm 4 flows along the nozzle arm 4 • in the longitudinal direction D1. Further, as shown in FIG. 3, the first gas nozzle 35 and the second gas nozzle 36 are disposed below the nozzle arm 4. The first gas nozzles 35 are disposed on the base end portion 21 side of the nozzle arm 4, and the second gas nozzles 36 are disposed on the food-side portion 20 side of the nozzle arm 4. The first gas nozzle 35 is disposed so as not to overlap the nozzle arm 4 in plan view (see Fig. 2). Further, the second gas nozzle 36 is provided with 100134597 15 201237950 placed in the vicinity of the lower portion 23 of the soothing nozzle. The second gas nozzle 36 faces the nozzle lower portion 23 in the horizontal direction. The first gas nozzle 35 and the second gas nozzle 36 are held by the first stays 38 and the second stays 39 arranged at the standby position. Therefore, when the nozzle 3 and the nozzle arm 4 are rotated about the nozzle rotation axis u, the first gas nozzle 35 and the second gas nozzle 36 are relatively moved with respect to the nozzle 3 and the nozzle arm 4. As shown in Fig. 3, the n-th gas nozzle % and the second gas nozzle % are supplied with nitrogen as a gas through the common gas valve 4G. That is, when the gas reading is turned on, nitrogen gas is supplied to the first gas nozzle 35, and nitrogen gas is discharged from the first 'i gas nozzle 35 to the nozzle arm 4. When the gas valve 40 is opened, nitrogen gas is supplied to the second gas nozzle 36, and the second gas discharge port of the second gas nozzle is discharged to the nozzle 3. Therefore, when the gas valve 40 is opened, nitrogen gas is discharged from the first gas nozzle 35 and the second gas nozzle 36. The first gas nozzle 35 is disposed such that nitrogen gas is discharged obliquely upward from the first gas nozzle 35, for example. Nitrogen gas discharged from the first gas nozzle % is blown to the nozzle arm 4. _, the nitrogen gas which is sprayed on the nozzle f4 flows in the longitudinal direction (1) along the lower portion of the nozzle arm 4. Further, since the p gas nozzle 35 and the nozzle arm 4 are disposed so as not to overlap each other in a plan view, the nitrogen gas discharged from the first gas nozzle 35 is blown from the lower portion of the squirt*. On the other hand, the 帛2 gas nozzle 36 is disposed such that the nitrogen gas is horizontally discharged from the second gas nozzle 36, for example. The nitrogen gas discharged from the second gas nozzle % is blown to the nozzle lower portion 23. 100134597 201237950 Figure 5 is an enlarged view of a portion of u 4 . Hereinafter, the cross section of the nozzle arm 4 (the orthogonal cross section C1 of the arm portion 22) will be described in detail. As described above, the orthogonal cross section C1 is, for example, a pentagonal shape. The orthogonal cross section C1 includes an upper portion 41, a right side portion 42 (side portion, another side end), a left side portion 43 (one side end), and a lower σ Μ4. The upper portion 41, the right side portion 42, the left side portion 43, and the lower portion are the portions of the upper surface 26, the right side surface 27, the left side surface 28, and the lower surface 29. The upper portion 41 is inclined with respect to the horizontal plane. The right side portion 42 and the left side portion 43 extend in the vertical direction. The lower portion 44 is inclined with respect to the horizontal plane. The lower material is, for example, a V shape. The upper 41 includes a left end 45 (top), a right end 46, and an upper inclined portion 47 connecting the left end 45 and the right end 46. The left end μ of the upper portion 4i is located at the uppermost portion on the orthogonal section C1. Therefore, the right end 46 of the upper portion 41 is located lower than the left end 45 of the upper portion 41. 1 The lower end portion 46 is lowered, and the upper side inclined portion 47 is continuously lowered as the left end 45 of the top upper portion 41 so as to be closer to the right end 46. The upper side inclined portion 47 is attached to the right end of the upper portion 41 46 is: descending to the right side portion 42 the angle is, for example, fixed. The upper inclined portion is inclined by the upper inclined portion 47, and the straight track is changed by 1:1, and the straight line is not determined by the straight line of the solid form, and the side inclined portion 47 may be the first embodiment and the lower portion. Two: the curve that protrudes downward.匕έ has left end 48, right her" right end 49 between the lower end 5 〇 (bottom +, arranged at the left end 48 and side inclined (four), and connected right end 49 4 48 and the lower end 5 〇 left, 00, 34597 5 右侧 right The lower end 50 is located at the lowermost portion on the orthogonal cross-section C1. Therefore, the left end 48 and the right end 49 of the lower portion 44 are located above the lower end 50. The left inclined portion 51 is from the left side. The left portion 48 of one portion, that is, the left end 48 of the lower portion 44, is continuously inclined downwardly as the bottom lower end 50. Similarly, the right inclined portion 52 is continuously lowered from the right end 49 of the lower portion 44, which is a portion of the right portion 42, The manner of the bottom lower end 50 is continuously inclined. The inclination angles of the left inclined portion 51 and the right inclined portion 52 may be fixed or continuously changed. Moreover, the inclination angle or the change state of the left inclined portion 51 may be compared with the right side. The inclined portion 52 may be the same or different. The lower portion 44 is inclined such that the width (the length in the left-right direction) of the orthogonal cross section C1 decreases toward the lower end 50. Further, the left side portion 43 is from the left end 45 of the upper portion 41 toward The square extends to the left end 48 of the lower portion 44. The left end 45 of the upper portion 41, the left side portion 43, and the left end portion 48 of the lower portion 44 are located on the leftmost side in the orthogonal cross section C1. The left end 45 of the upper portion 41 is a portion of the upper portion 41 while Also, it is a part of the left side portion 43. Similarly, the left end 48 of the lower portion 44 is a portion of the lower portion 44 and is also a portion of the left side portion 43. The left side portion 43 is located at one of the most lateral side ends on the orthogonal cross section C1. Further, the right side portion 42 extends downward from the right end 46 of the upper portion 41 to the right end 49 of the lower portion 44. The right end 46, the right side portion 42, and the right end 49 of the lower portion 44 of the upper portion 41 are located at the rightmost side on the orthogonal section C1. The right end 46 of the upper portion 41 is a portion of the upper portion 41 and is also a portion of the right side portion 42. 100134597 18 201237950 Similarly, the right end 49 of the lower portion 44 is a portion of the lower portion 44 and is also a portion of the right side portion 42. 42 is the other side end located on the most lateral side in the orthogonal cross section C1. That is, the right side portion 42 and the left side portion 43 are disposed on the opposite side to the left and right side ends of the opposite side with respect to the axis CL1. 35 series from the nozzle arm 4 The side is configured to discharge gas toward the lower portion of the nozzle arm 4. That is, the nitrogen gas discharged from the first gas nozzle 35 is blown from the right side to the right side surface 27 or the lower surface 29 of the nozzle arm 4. As described above, the upper side The inclined portion 47 is inclined so as to be closer to the right end 46 of the upper portion 41. Therefore, the upper inclined portion 47 is lowered toward the side from which the gas from the first gas nozzle 35 is blown (see Fig. 8). A flow chart showing an example of the operation when the nozzle 3 and the nozzle arm 4 are cleaned is shown in Fig. 7. Fig. 7 is a cross-sectional view showing an example of the operation of pure water when pure water is supplied to the nozzle arm 4. Fig. 8 is a cross-sectional view showing an example of the operation of pure water when nitrogen gas is supplied to the nozzle arm 4. Hereinafter, reference is made to FIG. 3. Further, in the following description, FIG. 1, FIG. 6, FIG. 7, and FIG. 8 are appropriately referred to. The cleaning of the nozzle 3 and the nozzle arm 4 is performed, for example, in a state where the substrate W is not held on the spin chuck 2. In the cleaning of the nozzle 3 and the nozzle arm 4, first, pure water is discharged from the first pure water nozzle 33 and the second pure water nozzle 34 to the nozzle arm 4 (Step S of FIG. 6) ). Specifically, the control device 7 opens the pure water valve 37 in a state where the nozzle 3 and the nozzle arm 4 are in the standby position, and discharges pure water from the first pure water nozzle 33 and the second pure water nozzle 34. 100134597 19 201237950 Most of the pure water discharged from the first pure water nozzle 33 is supplied to the upper surface 26 of the arm portion 22, and a part of the pure water discharged from the first pure water nozzle 33 is supplied to the arm portion 22. Right side surface 27 and left side surface 28. Since the upper surface 26 of the arm portion 22 is inclined with respect to the horizontal plane, the pure water supplied to the upper surface 26 of the arm portion 22 moves downward along the longitudinal direction D1 toward the distal end portion 20, and flows downward along the upper surface 26 (refer to Figure 7). Then, the pure water reaching the right end 46 of the upper portion 41 is scattered laterally from the right end 46 of the upper portion 41 or downward along the right side surface 27. Further, the pure water supplied to the right side surface 27 and the left side surface 28 moves downward along the longitudinal direction D1 toward the distal end portion 20, and flows downward along the right side surface 27 or the left side surface 28. Then, as shown in Fig. 7, the pure water reaching the lower end of the right side surface 27 (the right end 49 of the lower portion 44) and the lower end of the left side surface 28 (the left end 48 of the lower portion 44) is dropped from the right side 27 or the left side 28, or down The surface 29 flows downward. On the other hand, most of the pure water discharged from the second pure water nozzle 34 is supplied to the lower surface 29 of the arm portion 22, and a part of the pure water discharged from the second pure water nozzle 34 is supplied to the arm portion 22. Right side surface 27 and left side surface 28. As described above, the pure water supplied to the right side surface 27 and the left side surface 28 falls from the right side surface 27 or the left side surface 28, or flows downward along the lower surface 29. On the other hand, since the lower surface 29 of the arm portion 22 is inclined with respect to the horizontal plane, the pure water supplied to the lower surface 29 of the arm portion 22 moves toward the distal end portion 20 in the longitudinal direction D1 and flows downward along the lower surface 29 ( Refer to Figure 7). That is, the pure water supplied to the lower surface 29 of the arm portion 22 flows from the nozzle lower surface 29 along a portion of the pure water of 100134597 20 201237950 50 in such a manner as to move toward the lower end 50. Then, the lower arm 4 is reached and falls. The pure water discharged from the first pure water nozzle 33 and the second pure water nozzle % is supplied to the upper surface 26, the right side surface 27, the left side surface 28, and the lower surface 29 of the arm portion 22. Thereby, foreign matter such as fine particles adhering to the arm portion 22 or the treatment liquid is washed away by pure water. In addition, the pure water supplied from the first pure water nozzle 33 and the second pure water nozzle 34 to the arm portion 22 flows toward the distal end portion 2A in the longitudinal direction D1. Then, the pure water reaching the vicinity of the front end portion 2 is moved from the arm portion to the front end portion 20, and flows downward along the front end portion 2A or the nozzle 3. By this, the foreign matter or the like adhering to the tip end portion 20 or the nozzle 3 is washed away by pure water. Then, the pure water dropped from the front end portion 20 or the nozzle 3 is caught by the casing u. Then, nitrogen gas is discharged from the first gas nozzle 35 and the second gas nozzle 36 to the nozzle 3 and the nozzle arm 4 (step S2 of Fig. 6 and gas supply step). Specifically, the control device 7 opens the gas valve 40 while the nozzle 3 and the nozzle arm 4 are in the standby position, and discharges nitrogen gas from the first gas nozzle 35 and the second gas nozzle 36. Most of the nitrogen gas discharged from the first gas nozzle 35 is blown on the lower surface 29 of the arm portion 22, and the one portion of the nitrogen gas ejected from the first gas nozzle 35 is applied to the right side surface 27 of the arm portion 22 and The left side surface 28 is blown (see Fig. 8). The nitrogen gas that blows the lower surface 29 of the arm portion 22 flows along the lower surface 29 toward the distal end portion 20 in the longitudinal direction D1. Further, the nitrogen gas on the right side surface 27 and the left side surface 28 of the blowing arm portion 22 flows along the right side surface 27 or the left side surface 28 toward the front end portion 100134597 21 201237950 20 in the longitudinal direction D1. Thereby, the pure water adhering to the lower surface 29, the right side surface 27, and the left side surface 28 of the arm portion κ is removed by blowing nitrogen gas. On the other hand, most of the nitrogen gas discharged from the second gas nozzle 36 is blown to the nozzle lower portion 23. Further, nitrogen gas which is discharged from the first gas nozzle 35 to the arm portion 22 and reaches the vicinity of the tip end portion 20 flows along the tip end portion 2 () or the nozzle 3. Therefore, the tip end portion 20 is blown with nitrogen gas discharged from the second gas nozzle, and the nozzle 3 is blown with nitrogen gas discharged from the second gas nozzle 35 and the second gas nozzle 36. Thereby, the pure water adhering to the tip end portion or the nozzle 3 is blown off and removed. By discharging nitrogen gas from the first gas nozzle 35, pure water is removed from the right side surface 27 and the left side surface 28 of the lower surface 29 of the arm portion 22. Although the nitrogen gas discharged from the first gas nozzle 35 is hardly supplied to the upper surface % of the arm portion 22, the pure water supplied to the upper surface 26 of the arm portion 22 flows down due to the inclination of the upper surface 26, thereby Surface 26 is removed. Therefore, pure water can be removed from the entire arm portion 22 by removing pure water from the lower surface 29, the right side surface 27, and the left side surface 28 of the arm portion 22. Further, since the nitrogen gas discharged from the second gas nozzle 35 is also supplied to the nozzle 3 and the tip end portion 20, the pure water adhering to the nozzle 3 and the nozzle arm 4 can be efficiently removed. Then, pure water is discharged from the center shaft nozzle 19 to the nozzle 3 and the front end portion 20 of the nozzle arm 4 (step S3 in Fig. 6 and second pure water supply step). Specifically, the control device 7 controls the nozzle in a state where the shutter 5 is placed at the standby position.
100134597 22 S 201237950 旋轉機構10,使喷嘴3及喷嘴臂4移動至處理位置(參照圖 1)。即,控制裝置7使喷嘴3移動至中心軸喷嘴19之下方。 j後,控制裝置7在噴嘴3位於中心軸喷嘴19下方之狀態 下,開啟純水閥18,使純水自中心軸喷嘴19向喷嘴3吐出。 自中心軸喷嘴所吐出純水之大部分,係供給至喷嘴3 及喷嘴臂4之前端部2〇。即,對喷嘴3及前端部2〇,不僅 自第1純水喷嘴33及第2純水噴嘴34供給純水,而且自中 心轴喷嘴19亦供給純水。藉此,可充分地對噴嘴3及前端 部20供給純水。尤其’對未充分供給來自第丨純水喷嘴% 及第2純水喷嘴34之純水之範圍(喷嘴3之凹部、或喷嘴臂 4之彎曲部)亦可確實地供給純水。藉此,可確實地去除附 著於喷嘴3及前端部20之異物或處理液。 接著,自第1氣體喷嘴35及第2氣體噴嘴%向噴嘴3 及喷嘴臂4吐出氮細6之步驟以、第2氣體供給 具體而言,控制裝置7在使遮斷板5位於待機位置之狀能 下,控制喷嘴旋轉機構1G’使噴嘴3及対臂4移動至; 機位置。然後’控制裝置7在使喷嘴 , 你番夕灿^ 久育背臂4位於待機 位置之狀怨下’開啟氣體閥4G,使氮氣自第 及第2氣體喷嘴36吐出。如上述,㈣巧心ϋ 20及臂部22上之純水,係藉由自第j 4 則鳊部 氣體嘴嘴35及望7 氣體喷嘴36所吐出之氮氣而加以去 # 及弟2 · 藉此,使啥嘴2 75 喷嘴臂4乾燥,結束噴嘴3及噴嘴臂々之、青先貲0^ 3及 100134597 23 201237950 如上述於第1實施形態中,保持噴嘴3之噴嘴臂4係沿著 水平面朝長度方向D1延伸。臂部22之正交剖面C1係包含 自頂部(左端45)連續下降至右側部42為止之上側傾斜部 47。由於上側傾斜部47連續下降,故即使處理液附著於上 側傾斜部47,此處理液亦會沿著上側傾斜部47向下流動。 然後,此處理液係自喷嘴臂4落下而去除。亦即,即使處理 液附著於喷嘴臂4,此處理液亦可於短時間内自喷嘴臂4去 除。因此,可減少處理液對於噴嘴臂4之殘留量。 又,於第1實施形態中,正交剖面C1包含有自右側部42 連續下降至底部(下端44)為止之右側傾斜部52、及自左側 部43連續下降至底部為止之左側傾斜部51。由於右侧傾斜 部52及左側傾斜部51連續下降至底部為止,故即使處理液 附著於右侧傾斜部52及左側傾斜部51 ’此處理液亦會沿著 右側傾斜部52及左側傾斜部51向下流動'然後,此處理液 係自喷當臂4落下而去除。因此’可減少處理液對於喷嘴臂 4之殘留量。 又,於第1實施形態中,正交剖面C1之一側端係包含有 頂部(左端45),而右側部42則包含有正交剖面C1之另一 側端。上側傾斜部47自頂部延伸至右側部42 Μ。因此, 上側傾斜部47自-側端延伸至另—侧端為止。即,正交剖 面C1之上部41係自-側端延伸至另—側端為止,且越靠 近另一側端越下降。因此,附著於正交剖面C1上部41之 100134597100134597 22 S 201237950 Rotating mechanism 10 moves nozzle 3 and nozzle arm 4 to the processing position (see Fig. 1). That is, the control device 7 moves the nozzle 3 below the center shaft nozzle 19. After the j, the control device 7 opens the pure water valve 18 in a state where the nozzle 3 is positioned below the center shaft nozzle 19, and discharges pure water from the center shaft nozzle 19 to the nozzle 3. Most of the pure water discharged from the center shaft nozzle is supplied to the nozzle 3 and the front end portion 2 of the nozzle arm 4. In other words, pure water is supplied from the first pure water nozzle 33 and the second pure water nozzle 34 to the nozzle 3 and the tip end portion 2, and pure water is supplied from the center shaft nozzle 19. Thereby, pure water can be sufficiently supplied to the nozzle 3 and the tip end portion 20. In particular, pure water can be reliably supplied to the range of the pure water from the second pure water nozzle % and the second pure water nozzle 34 (the concave portion of the nozzle 3 or the curved portion of the nozzle arm 4). Thereby, the foreign matter or the treatment liquid attached to the nozzle 3 and the tip end portion 20 can be surely removed. Next, the step of discharging the nitrogen fine 6 from the first gas nozzle 35 and the second gas nozzle % to the nozzle 3 and the nozzle arm 4, and the second gas supply, specifically, the control device 7 places the blocking plate 5 at the standby position. Under the condition, the nozzle rotating mechanism 1G' is controlled to move the nozzle 3 and the arm 4 to the machine position. Then, the control unit 7 opens the gas valve 4G to cause the nitrogen gas to be ejected from the first and second gas nozzles 36 by causing the nozzle, and the rear arm 4 of the long-term rear arm 4 to be in the standby position. As described above, (4) the pure water on the smart core 20 and the arm portion 22 is removed by the nitrogen gas spouted from the gas nozzles 35 and the gas nozzles 36 of the jth chamber, and the second is borrowed. In this way, the nozzle 2 and the nozzle arm 4 are dried, and the nozzle 3 and the nozzle arm are finished. The first nozzle 赀 0^3 and 100134597 23 201237950 As described above, in the first embodiment, the nozzle arm 4 of the holding nozzle 3 is along The horizontal plane extends in the longitudinal direction D1. The orthogonal cross section C1 of the arm portion 22 includes an upper side inclined portion 47 from the top (left end 45) continuously descending to the right side portion 42. Since the upper inclined portion 47 is continuously lowered, even if the treatment liquid adheres to the upper inclined portion 47, the treatment liquid flows downward along the upper inclined portion 47. Then, this treatment liquid is dropped from the nozzle arm 4 and removed. That is, even if the treatment liquid adheres to the nozzle arm 4, the treatment liquid can be removed from the nozzle arm 4 in a short time. Therefore, the residual amount of the treatment liquid to the nozzle arm 4 can be reduced. Further, in the first embodiment, the orthogonal cross section C1 includes the right inclined portion 52 which is continuously lowered from the right side portion 42 to the bottom portion (lower end 44), and the left inclined portion 51 which is continuously lowered from the left side portion 43 to the bottom portion. Since the right inclined portion 52 and the left inclined portion 51 are continuously lowered to the bottom, even if the treatment liquid adheres to the right inclined portion 52 and the left inclined portion 51', the treatment liquid will follow the right inclined portion 52 and the left inclined portion 51. Flowing downwards 'The treatment liquid is then removed from the spray when the arm 4 is dropped. Therefore, the residual amount of the treatment liquid to the nozzle arm 4 can be reduced. Further, in the first embodiment, the one end of the orthogonal cross section C1 includes a top portion (left end 45), and the right side portion 42 includes the other side end of the orthogonal cross section C1. The upper side inclined portion 47 extends from the top to the right side portion 42A. Therefore, the upper inclined portion 47 extends from the side end to the other side end. That is, the upper portion 41 of the orthogonal cross-section C1 extends from the - side end to the other side end, and decreases toward the other side end. Therefore, it is attached to the upper section 41 of the orthogonal section C1.
24 S 201237950 處理液向共用之侧端(另-侧端)流下。藉此,使附著於正六 剖面α上部41之液滴彼此結合,可湘其自身重量而正落父 下。因此,其可減少處理液對於噴嘴臂4之殘留量里各 又,於第1實施形態中,係將自第1氣體嘴嘴35所吐出 之氮氣對喷嘴臂4之下部噴吹。如上述,附著於噴嘴臂4 之處理液係'沿著喷嘴臂4向下流動。即,附著於噴嘴臂* 之處理液係集中於喷嘴臂4之下部。對此處理液所集中之位 置喷吹氮氣。藉此,可吹飛附著於噴嘴臂4之處理液而有^ 率地加以去除。因此,其可減少處理液對於喷嘴臂 · 量。 〈殘召 广又’於第1實施形態中’自第1氣體喷嘴35所吐出之氮 氣係沿著噴嘴臂4朝長度方向m流動。因此,自第^ ^ 喷嘴35對嘴嘴臂4喷吹氣氣之範圍將會擴大。藉此,:自 更廣之範圍去除處魏。因此’可減少處理液對於噴嘴臂4 之殘。 又,於第1實施形態中,自第丨氣體喷嘴35所吐出之氮 氣係自側方對喷嘴臂4之下部噴吹。上側傾斜部47係朝: 來自第1氣體喷嘴35之氮氣所噴吹之側下降。因此,附著 於上側傾斜部47之處理液會向來自第1氣體噴嘴35之氮: 所喷吹之側流下。換言之,自第i氣體喷嘴35所吐出之^ 乱係對附著於上侧傾斜部47之處理液所集中之位置噴吹'。 因此,其可有效率地去除附著於上側傾斜部47之處理液。 100134597 25 201237950 又’於第1實施形態中,喷嘴臂4係具有疏水性。因此 相較於喷嘴臂4為親水性之情況,附著於喷嘴臂4之處理 液,可於短時間内且以較小之力㈣嘴臂4去除。而且,由 ^處理液會被财,故可射_於喷嘴臂4之處理液之 量。因此,可進一步減少處理液對於喷嘴臂4之殘留量。 又於第1貝施形態中,將自第1純水喷嘴33所吐出之 ,水供給至噴嘴臂4之上表面%。藉此,可將附著於喷嘴 # 4上表面26之微粒等異物或處理液沖洗掉。因此,盆可 抑制或防止附著於喷嘴臂4上表面26之異物或處理液落於 基板W上而導致基板w被污染。而且,如上述,供給至喷 嘴,4之純水’係藉由沿㈣嘴臂4訂崎短時間内自噴 4去除’故可抑制或防止在結束對喷嘴臂4供給純水 後,純水自喷嘴臂4掉落於基板w上。 又’於第1實施形態中’將自第2氣體喷嘴36所吐出之 氮氣對位槪噴嘴臂4更下方之噴嘴下部23姐。由於喷 嘴下部23係配置於比喷嘴臂4更下方,故附著於喷嘴3外 表面之處理液、或沿著噴嘴臂4移動至噴嘴3之處理液會向 喷嘴下4 23机下。因此’自第2氣體噴嘴%所吐出之氮氣 係對處理液所集巾之位置噴吹。因此,其可有效率地去除處 理液。 又於第1實施形態中,自第i氣體喷嘴%所吐出之氣 氣係著噴$ | 4自基端部21朝向前端部2()之方向D2(參 100134597 26 201237950 照圖3)流動。同樣地,自第2氣體喷嘴%所吐出之氮氣係 沿著喷嘴下部23自基端部21朝向前端部20之方向D2流 動。即’自各氣體喷嘴35、36所吐出之氮氣翻同方向流 動。因此,其可抑制或防止自第1氣體喷嘴35所吐出之氮 氣與自第2氣體喷嘴36所吐出之氮氣發生碰揸,而導致自 各乱體噴嘴35、36所吐出之氮氣之衝力減弱。藉此,其可 確貫地去除附著於喷嘴3及喷嘴臂4之處理液。 又,於第1實施形態中,藉由將喷嘴旋轉機構10之驅動 力傳遞至喷嘴臂4 ’使噴嘴臂4於處理位置與待機位置之間 移動。自第1氣體喷嘴35所吐出之氮氣係對位於待機位置 之喷嘴臂4之下部喷吹。因此,可將第1氣體噴嘴35配置 於喷嘴臂4之待機位置。即,第i氣體喷嘴%亦可不以與 喷嘴臂4 一起移動之方式所構成。因此,可抑制或防止包含 噴嘴臂4之可動部之大型化。 又’於第1實施形態中’在處理位置上位於由旋轉卡盤2 所保持基板W之上方之部分,即,臂部22係具有正交剖面 C1。因此’即使處理液附著於臂部22,此處理液亦可於短 時間内去除。因此’即便使喷嘴臂4於基板W上移動,亦 可確實地抑制或防止處理液自喷嘴臂4掉落於基板w上。 藉此,可抑制或防止基板W之污染或品質低下。 雖然本發明之實施形態之說明已如以上所述,但本發明並 不受限於上述第1實施形態之内容,其亦可以其他形態來實 100134597 27 201237950 施。 例如,於上述第1實施形態中,已說明正交剖面Cl為圖 5所示之五角形狀之情況。然而,正交剖面C1之形狀亦可 為將圖5之上下加以反轉之形狀。即,亦可使正交剖面C1 之上部為倒立V字狀,使正交剖面C1之下部為自一側端延 伸至另一側端為止之斜線。而且,正交剖面C1亦可為五角 形以外之多角形。 具體而言,例如,如圖9所示之喷嘴臂204,喷嘴臂204 之正交剖面C201亦可為三角形狀,正交剖面C201包含有 頂部245、側部246、及上側傾斜部247。而且,正交剖面 C201包含有底部250、及下側傾斜部252。 又,如圖10所示之喷嘴臂304,喷嘴臂304之正交剖面 C301亦可為四角形狀。正交剖面C301包含有頂部345、側 部346、及上側傾斜部347。而且,正交剖面C301包含有 底部350、及下側傾斜部352。 又,於上述第1實施形態中,雖然已說明利用複數根直線 對正交剖面C1進行劃分之情況,但正交剖面C1亦可包含 直線及曲線,亦可利用曲線進行劃分。 具體而言,例如,如圖11所示之喷嘴臂404,喷嘴臂404 之正交剖面C401亦可利用朝下側凸出之曲線、與相對於水 平面傾斜之直線進行劃分。正交剖面C401包含有頂部445、 側部446、及上側傾斜部447。而且,正交剖面C401包含 100134597 28 201237950 有底部450、及下侧傾斜部452。 又’於上述第1貫施形態中,已說明臂部22自臂部22 之一端部至臂部22之另一端部為止具有固定之剖面(正交 剖面ci)之情況。然而,臂部22之剖面亦可進行變化。 具體而言,亦可使任意兩個位置之臂部22之剖面為相似 (同形),使臂部22之剖面積(大小)連續地變化。於此情形 時,臂部22之剖面積亦可為越接近臂部22之一端部(前喁 部20側之端部)越減少。又,臂部22之剖面形狀(正交剖面 ci之形狀)亦可隨著接近於臂部22之一端部連續地變化。 於此情形時,臂部22之剖面積可為固定,亦可為越接近臂 部22之一端部越減少。 又’於上述第1實施形態中,已說明自第1純水噴嘴33 及第2純水噴嘴34對喷嘴臂4供給純水之情況。然而,亦 可自除了第1純水噴嘴33及第2純水喷嘴34以外之噴嘴對 喷嘴臂4供給純水。 具體而言’亦可於遮斷板5之上表面設置供給純水之純水 喷嘴553(參照圖1)。於此情形時,控制裝置7亦可一邊藉 由控制遮斷板旋轉機構14使遮斷板5旋轉,一邊使純水自 純水喷嘴553向旋轉狀態之遮斷板5之上表面吐出。自純夂 喷嘴553所吐出之純水係供給至遮斷板5之上表面,並藉由 因遮斷板5之旋轉所產生之離心力朝遮斷板5之周圍甩落 因此,自遮斷板5甩落之純水會碰撞劃分處理室6 〈喃離壁 100134597 29 201237950 (未圖不)而彈回。然後,所彈回之純水將供給至喷嘴臂4。 藉此,可將附著於喷嘴臂4之異物或處理液沖洗掉。 又,於上述第i實施形態中,已說明保持喷嘴3 20設置於噴謂4之情L亦可不設置前端部2/ 而將喷嘴3保持於料22之—端部。即,料^一端部 亦可為保持噴嘴3之前端部。 又’於上述第1實施形態中,已說明自第1氣體噴嘴35 及第2氣體噴嘴36所吐出之氣體為氮氣之情況'然而,自 第1乳體喷嘴35及第2氣體喷嘴36所吐出之氣體並不限定 於氮氣,亦可為氬氣等氮氣以外之惰性氣體,亦可為乾燥之 空氣或潔淨之空氣。 又,於上述第1實施形態中,已說明自第1純水喷嘴33 及第2氣體喷嘴36水平地吐出流體(純水或氮氣),且 純水噴嘴34及第1氣體喷嘴35向斜上方吐出流體之情況。 然而,來自第1純水喷嘴33及第2氣體噴嘴36之流體之吐 出方向,亦可為斜上方向或斜下方向。又,來自第2純水噴 嘴34及第1氣體噴嘴35之純水之吐出方向亦可為水平方 向。 又’於上述第1實施形態中,已說明經由共用之純水閥 37對第1純水喷嘴33及第2純水噴嘴34供給純水,且經 由共用之氣體閥40對第1氣體噴嘴35及第2氣體噴嘴36 供給氮氣之情況。然而,亦可經由個別之閥對第1純水喷嘴 100134597 30 201237950 33及第2純水喷嘴34供給純水。同樣地,亦可經由個別之 閥對第1氣體喷嘴35及第2氣體喷嘴36供給氮氣。 另外,本發明可於申請專利範圍所記載事項之範圍内實施 各種設計變更。 【圖式簡單說明】 圖1係表示本發明之第1實施形態之基板處理裝置之概略 構成的側視圖。 圖2係表示本發明之第1實施形態之基板處理裝置之概略 構成的俯視圖。 圖3係本發明之第1實施形態之喷嘴臂及與此相關之構成 的側視圖。 圖4係自圖3所示之箭頭IV之方向所觀察喷嘴臂之剖面 圖。 圖5係將圖4之一部分加以放大之圖。 圖6係用以說明清洗喷嘴及喷嘴臂時之動作之一例的流 程圖。 圖7係用以說明對喷嘴臂供給純水時之純水動作之一例 的剖面圖。 圖8係用以說明對噴嘴臂供給氮氣時之純水動作之一例 的剖面圖。 圖9係本發明之第2實施形態之喷嘴臂的剖面圖。 圖10係本發明之第3實施形態之喷嘴臂的剖面圖。 100134597 31 201237950 圖11係本發明之第4實施形態之喷嘴臂的剖面圖。 【主要元件符號說明】 1 基板處理裝置 2 旋轉卡盤(基板保持手段) 3 喷嘴 4 喷嘴臂 5 遮斷板 6 處理室 7 控制裝置 8 旋轉底座 9 旋轉馬達 10 喷嘴旋轉機構(移動手段) 11 箱體 12 支軸 13 遮斷板升降機構 14 遮斷板旋轉機構 15 貫通孔 16 第1配管 17 第2配管 18 純水閥 19 中心轴喷嘴 20 前端部24 S 201237950 The treatment liquid flows down to the side of the common side (the other side). Thereby, the droplets attached to the upper portion 41 of the regular six-section α are combined with each other, and the weight can be lowered by the parent. Therefore, in the first embodiment, the nitrogen gas discharged from the first gas nozzle 35 is blown to the lower portion of the nozzle arm 4 in the first embodiment. As described above, the treatment liquid attached to the nozzle arm 4 flows downward along the nozzle arm 4. That is, the processing liquid adhering to the nozzle arm * is concentrated on the lower portion of the nozzle arm 4. Nitrogen gas was blown at a position where the treatment liquid was concentrated. Thereby, the treatment liquid adhering to the nozzle arm 4 can be blown off and removed at a high rate. Therefore, it can reduce the amount of the treatment liquid for the nozzle arm. In the first embodiment, the nitrogen gas discharged from the first gas nozzle 35 flows along the nozzle arm 4 in the longitudinal direction m. Therefore, the range in which the gas is blown from the nozzle 35 to the mouth arm 4 will be expanded. In this way, we remove Wei from a wider range. Therefore, the residual of the treatment liquid to the nozzle arm 4 can be reduced. Further, in the first embodiment, the nitrogen gas discharged from the second gas nozzle 35 is blown from the lower side of the nozzle arm 4 from the side. The upper inclined portion 47 is lowered toward the side from which the nitrogen gas from the first gas nozzle 35 is blown. Therefore, the treatment liquid adhering to the upper inclined portion 47 flows down to the side from which the nitrogen gas from the first gas nozzle 35 is blown. In other words, the spout from the i-th gas nozzle 35 is blown at a position where the processing liquid adhering to the upper inclined portion 47 is concentrated. Therefore, it is possible to efficiently remove the treatment liquid adhering to the upper inclined portion 47. 100134597 25 201237950 In the first embodiment, the nozzle arm 4 is hydrophobic. Therefore, compared with the case where the nozzle arm 4 is hydrophilic, the treatment liquid adhering to the nozzle arm 4 can be removed in a short time and with a small force (4) of the mouth arm 4. Moreover, the amount of the treatment liquid from the nozzle arm 4 can be emitted by the treatment liquid. Therefore, the residual amount of the treatment liquid to the nozzle arm 4 can be further reduced. Further, in the first Behsch configuration, water discharged from the first pure water nozzle 33 is supplied to the upper surface % of the nozzle arm 4. Thereby, foreign matter such as particles adhering to the upper surface 26 of the nozzle #4 or the treatment liquid can be washed away. Therefore, the tub can suppress or prevent the foreign matter or the treatment liquid adhering to the upper surface 26 of the nozzle arm 4 from falling on the substrate W, causing the substrate w to be contaminated. Further, as described above, the pure water supplied to the nozzles 4 is removed from the spray 4 in a short period of time along the (four) nozzle arm 4, so that it is possible to suppress or prevent the supply of pure water to the nozzle arm 4 after completion of the pure water. The nozzle arm 4 is dropped on the substrate w. Further, in the first embodiment, the nitrogen gas discharged from the second gas nozzle 36 is aligned with the lower nozzle portion 23 below the nozzle arm 4. Since the nozzle lower portion 23 is disposed below the nozzle arm 4, the treatment liquid adhering to the outer surface of the nozzle 3 or the treatment liquid moving to the nozzle 3 along the nozzle arm 4 is lowered to the nozzle. Therefore, the nitrogen gas discharged from the second gas nozzle % is blown at the position of the towel of the treatment liquid. Therefore, it can efficiently remove the treatment liquid. Further, in the first embodiment, the gas-jet injection $_4 discharged from the i-th gas nozzle % flows from the proximal end portion 21 toward the distal end portion 2 () direction D2 (see 100134597 26 201237950, see Fig. 3). Similarly, the nitrogen gas discharged from the second gas nozzle % flows along the nozzle lower portion 23 from the base end portion 21 toward the tip end portion 20 in the direction D2. That is, the nitrogen gas discharged from each of the gas nozzles 35 and 36 flows in the same direction. Therefore, it is possible to suppress or prevent the nitrogen gas discharged from the first gas nozzle 35 from colliding with the nitrogen gas discharged from the second gas nozzle 36, and the momentum of the nitrogen gas discharged from the disordered nozzles 35 and 36 is weakened. Thereby, the treatment liquid adhering to the nozzle 3 and the nozzle arm 4 can be surely removed. Further, in the first embodiment, the driving force of the nozzle rotating mechanism 10 is transmitted to the nozzle arm 4' to move the nozzle arm 4 between the processing position and the standby position. The nitrogen gas discharged from the first gas nozzle 35 is blown to the lower portion of the nozzle arm 4 at the standby position. Therefore, the first gas nozzle 35 can be disposed at the standby position of the nozzle arm 4. That is, the i-th gas nozzle % may not be configured to move together with the nozzle arm 4. Therefore, the enlargement of the movable portion including the nozzle arm 4 can be suppressed or prevented. Further, in the first embodiment, the portion located above the substrate W held by the spin chuck 2 at the processing position, that is, the arm portion 22 has an orthogonal cross section C1. Therefore, even if the treatment liquid adheres to the arm portion 22, the treatment liquid can be removed in a short time. Therefore, even if the nozzle arm 4 is moved on the substrate W, the treatment liquid can be surely prevented or prevented from falling from the nozzle arm 4 on the substrate w. Thereby, contamination or deterioration of the quality of the substrate W can be suppressed or prevented. Although the description of the embodiments of the present invention has been made as described above, the present invention is not limited to the above-described first embodiment, and may be embodied in other forms as well as 100134597 27 201237950. For example, in the first embodiment described above, the case where the orthogonal cross section C1 is a pentagonal shape as shown in Fig. 5 has been described. However, the shape of the orthogonal section C1 may also be a shape in which the upper and lower sides of Fig. 5 are reversed. In other words, the upper portion of the orthogonal cross section C1 may be inverted V-shaped, and the lower portion of the orthogonal cross section C1 may be an oblique line extending from one end to the other end. Further, the orthogonal cross section C1 may be a polygon other than a pentagon. Specifically, for example, as shown in Fig. 9, the nozzle arm 204, the orthogonal cross section C201 of the nozzle arm 204 may have a triangular shape, and the orthogonal cross section C201 includes a top portion 245, a side portion 246, and an upper side inclined portion 247. Further, the orthogonal cross section C201 includes a bottom portion 250 and a lower side inclined portion 252. Further, as shown in Fig. 10, the nozzle arm 304 and the orthogonal cross section C301 of the nozzle arm 304 may have a quadrangular shape. The orthogonal cross section C301 includes a top portion 345, a side portion 346, and an upper side inclined portion 347. Further, the orthogonal cross section C301 includes a bottom portion 350 and a lower side inclined portion 352. Further, in the first embodiment, the case where the orthogonal cross section C1 is divided by a plurality of straight lines has been described. However, the orthogonal cross section C1 may include a straight line and a curved line, and may be divided by a curved line. Specifically, for example, in the nozzle arm 404 shown in Fig. 11, the orthogonal cross section C401 of the nozzle arm 404 can be divided by a curve which is convex toward the lower side and a straight line which is inclined with respect to the horizontal plane. The orthogonal cross section C401 includes a top portion 445, a side portion 446, and an upper side inclined portion 447. Further, the orthogonal section C401 includes 100134597 28 201237950 having a bottom portion 450 and a lower side inclined portion 452. Further, in the above-described first embodiment, the arm portion 22 has a fixed cross section (orthogonal cross section ci) from one end portion of the arm portion 22 to the other end portion of the arm portion 22. However, the profile of the arm portion 22 can also vary. Specifically, the cross section of the arm portion 22 at any two positions may be similar (same shape), and the sectional area (size) of the arm portion 22 may be continuously changed. In this case, the sectional area of the arm portion 22 may be smaller as it is closer to one end portion of the arm portion 22 (the end portion on the front side portion 20 side). Further, the cross-sectional shape of the arm portion 22 (the shape of the orthogonal cross-section ci) may be continuously changed as approaching one end portion of the arm portion 22. In this case, the sectional area of the arm portion 22 may be fixed or may be reduced as it approaches one end of the arm portion 22. In the first embodiment, the case where the pure water is supplied from the first pure water nozzle 33 and the second pure water nozzle 34 to the nozzle arm 4 has been described. However, pure water may be supplied to the nozzle arm 4 from nozzles other than the first pure water nozzle 33 and the second pure water nozzle 34. Specifically, a pure water nozzle 553 (see Fig. 1) for supplying pure water may be provided on the upper surface of the shutter 5. In this case, the control device 7 can also discharge the pure water from the pure water nozzle 553 to the upper surface of the shut-off plate 5 in the rotating state by controlling the shutter rotating mechanism 14 to rotate the blocking plate 5. The pure water discharged from the pure helium nozzle 553 is supplied to the upper surface of the shutter 5, and is collapsed toward the periphery of the shutter 5 by the centrifugal force generated by the rotation of the shutter 5, thereby the self-shield 5 Falling pure water will collide and divide the processing chamber 6 <brows away from the wall 100134597 29 201237950 (not shown) and bounce back. Then, the pure water that is bounced back is supplied to the nozzle arm 4. Thereby, the foreign matter or the treatment liquid adhering to the nozzle arm 4 can be washed away. Further, in the above-described first embodiment, it has been described that the holding nozzles 312 are provided in the ejector 4, and the nozzles 3 can be held at the ends of the material 22 without providing the tip end portion 2/. That is, the end portion of the material can also be the end portion of the holding nozzle 3. In the first embodiment, the gas ejected from the first gas nozzle 35 and the second gas nozzle 36 is nitrogen. However, the first emulsion nozzle 35 and the second gas nozzle 36 are discharged. The gas is not limited to nitrogen gas, and may be an inert gas other than nitrogen such as argon gas, or may be dry air or clean air. Further, in the above-described first embodiment, the fluid (pure water or nitrogen gas) is horizontally discharged from the first pure water nozzle 33 and the second gas nozzle 36, and the pure water nozzle 34 and the first gas nozzle 35 are obliquely upward. The situation of spit out fluid. However, the discharge direction of the fluid from the first pure water nozzle 33 and the second gas nozzle 36 may be an oblique upward direction or a downward oblique direction. Further, the discharge direction of the pure water from the second pure water nozzle 34 and the first gas nozzle 35 may be in the horizontal direction. In the first embodiment, the first pure water nozzle 33 and the second pure water nozzle 34 are supplied with pure water via the common pure water valve 37, and the first gas nozzle 35 is supplied to the first gas nozzle 35 via the common gas valve 40. And the case where the second gas nozzle 36 supplies nitrogen gas. However, pure water may be supplied to the first pure water nozzles 100134597 30 201237950 33 and the second pure water nozzle 34 via individual valves. Similarly, the first gas nozzle 35 and the second gas nozzle 36 may be supplied with nitrogen gas via an individual valve. Further, the present invention can be implemented in various design changes within the scope of the matters described in the claims. [Brief Description of the Drawings] Fig. 1 is a side view showing a schematic configuration of a substrate processing apparatus according to a first embodiment of the present invention. Fig. 2 is a plan view showing a schematic configuration of a substrate processing apparatus according to a first embodiment of the present invention. Fig. 3 is a side view showing a configuration of a nozzle arm according to a first embodiment of the present invention. Figure 4 is a cross-sectional view of the nozzle arm as seen from the direction of arrow IV shown in Figure 3. Figure 5 is an enlarged view of a portion of Figure 4. Fig. 6 is a flow chart for explaining an example of the operation of cleaning the nozzle and the nozzle arm. Fig. 7 is a cross-sectional view for explaining an example of pure water operation when pure water is supplied to the nozzle arm. Fig. 8 is a cross-sectional view for explaining an example of pure water operation when nitrogen is supplied to the nozzle arm. Fig. 9 is a cross-sectional view showing a nozzle arm according to a second embodiment of the present invention. Figure 10 is a cross-sectional view showing a nozzle arm according to a third embodiment of the present invention. 100134597 31 201237950 Fig. 11 is a cross-sectional view showing a nozzle arm according to a fourth embodiment of the present invention. [Description of main component symbols] 1 Substrate processing device 2 Rotating chuck (substrate holding means) 3 Nozzle 4 Nozzle arm 5 Interrupting plate 6 Processing chamber 7 Control device 8 Rotating base 9 Rotary motor 10 Nozzle rotating mechanism (moving means) 11 Box Body 12 Support shaft 13 Breaking plate lifting mechanism 14 Breaking plate rotating mechanism 15 Through hole 16 First pipe 17 Second pipe 18 Pure water valve 19 Center shaft nozzle 20 Front end
100134597 32 S 201237950 21 基端部 22 臂部(喷嘴臂之至少一部分) 23 喷嘴下部 24 螺釘 25 底座 26 喷嘴臂之上表面 27 右側面 28 左側面 29 下表面 30 芯材 31 液體供給管 32 氣體供給管 33 第1純水喷嘴(純水喷嘴) 34 第2純水喷嘴 35 第1氣體喷嘴 36 第2氣體噴嘴 37 純水閥 38 第1撐條 39 第2撐條 40 氣體閥 41 上部 42 右側部(側部、另一側端) 100134597 33 201237950 43 44 45 46 47 48 49 50 51 52 204 245 246 247 250 252 304 345 346 347 350 352 左側部(一側端) 下部 左端(頂部) 右端 上側傾斜部 左端 右端 下端(底部) 左側傾斜部 右側傾斜部(下側傾斜部) 喷嘴臂 頂部 側部 上側傾斜部 底部 下侧傾斜部 喷嘴臂 頂部 側部 上側傾斜部 底部 下側傾斜部100134597 32 S 201237950 21 Base end 22 Arm (at least part of the nozzle arm) 23 Nozzle lower part 24 Screw 25 Base 26 Nozzle arm upper surface 27 Right side 28 Left side 29 Lower surface 30 Core material 31 Liquid supply pipe 32 Gas supply Tube 33 First pure water nozzle (pure water nozzle) 34 Second pure water nozzle 35 First gas nozzle 36 Second gas nozzle 37 Pure water valve 38 First stay 39 Second stay 40 Gas valve 41 Upper part 42 Right side (side, side) 100134597 33 201237950 43 44 45 46 47 48 49 50 51 52 204 245 246 247 250 252 304 345 346 347 350 352 Left side (one side) Lower left end (top) Right side upper side inclined part Left end right end lower end (bottom) Left side inclined part right side inclined part (lower side inclined part) Nozzle arm top side upper side inclined part bottom lower side inclined part Nozzle arm top side upper side inclined part bottom lower side inclined part
100134597 34 S 201237950 404 喷嘴臂 445 頂部 446 側部 447 上側傾斜部 450 底部 452 下侧傾斜部 553 純水喷嘴 CL1 軸線 LI 喷嘴旋轉軸線 Cl 正交剖面 C201 正交剖面 C301 正交剖面 C401 正交剖面 D1 長度方向 D2 自基端部朝向前端部之方向 SI 〜S4 步驟 W 基板 IV 箭頭 100134597 35100134597 34 S 201237950 404 Nozzle arm 445 Top 446 Side 447 Upper side inclined part 450 Bottom part 452 Lower side inclined part 553 Pure water nozzle CL1 Axis LI Nozzle rotation axis Cl Orthogonal section C201 Orthogonal section C301 Orthogonal section C401 Orthogonal section D1 Length direction D2 from the base end toward the front end direction SI to S4 Step W Substrate IV Arrow 100134597 35
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2011045219A JP5734705B2 (en) | 2011-03-02 | 2011-03-02 | Substrate processing equipment |
Publications (2)
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TW201237950A true TW201237950A (en) | 2012-09-16 |
TWI434335B TWI434335B (en) | 2014-04-11 |
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TW100134597A TWI434335B (en) | 2011-03-02 | 2011-09-26 | Substrate treatment apparatus |
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JP (1) | JP5734705B2 (en) |
KR (1) | KR101221162B1 (en) |
TW (1) | TWI434335B (en) |
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JP6331961B2 (en) * | 2014-10-22 | 2018-05-30 | 東京エレクトロン株式会社 | Substrate liquid processing equipment |
JP6313196B2 (en) | 2014-11-20 | 2018-04-18 | 株式会社荏原製作所 | Polishing surface cleaning apparatus, polishing apparatus, and manufacturing method of polishing surface cleaning apparatus |
TWI661479B (en) * | 2015-02-12 | 2019-06-01 | 日商思可林集團股份有限公司 | Substrate processing apparatus, substrate processing system, and substrate processing method |
JP6804325B2 (en) * | 2017-02-09 | 2020-12-23 | 東京エレクトロン株式会社 | Liquid treatment equipment |
JP7186671B2 (en) * | 2019-06-24 | 2022-12-09 | 株式会社荏原製作所 | Cover for rocking part of substrate processing apparatus, rocking part of substrate processing apparatus, and substrate processing apparatus |
CN113606229B (en) * | 2021-06-15 | 2024-07-12 | 芜湖市零一精密工具制造有限公司 | Device for plugging cutter preformed hole |
JP2023043679A (en) * | 2021-09-16 | 2023-03-29 | 株式会社Screenホールディングス | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
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JPH0734982U (en) * | 1993-12-07 | 1995-06-27 | シチズン時計株式会社 | Washing basket |
JPH07254583A (en) * | 1994-03-16 | 1995-10-03 | Hitachi Ltd | Cleaning method and cleaning device |
JP3714763B2 (en) * | 1997-03-31 | 2005-11-09 | 大日本スクリーン製造株式会社 | Substrate holding member and substrate processing apparatus using the same |
JP4215900B2 (en) * | 1999-08-13 | 2009-01-28 | アルプス電気株式会社 | Wet processing nozzle device and wet processing device |
JP4011900B2 (en) * | 2001-12-04 | 2007-11-21 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
KR20030050796A (en) * | 2001-12-19 | 2003-06-25 | 삼성전자주식회사 | an apparatus for polishing semiconductor wafer |
JP4036331B2 (en) * | 2003-03-06 | 2008-01-23 | 東京エレクトロン株式会社 | Treatment liquid supply nozzle, treatment liquid supply apparatus, and nozzle cleaning method |
JP2004356517A (en) * | 2003-05-30 | 2004-12-16 | Ebara Corp | Method and device for substrate washing |
JP4494840B2 (en) | 2003-06-27 | 2010-06-30 | 大日本スクリーン製造株式会社 | Foreign matter removing apparatus, substrate processing apparatus, and substrate processing method |
JP4497407B2 (en) * | 2004-07-21 | 2010-07-07 | 東京エレクトロン株式会社 | Cleaning method and apparatus |
JP2007168039A (en) * | 2005-12-22 | 2007-07-05 | Ebara Corp | Polishing surface washing mechanism of polishing table and polishing device |
US8439051B2 (en) * | 2006-05-15 | 2013-05-14 | Tokyo Electron Limited | Method of substrate processing, substrate processing system, and storage medium |
KR20080005808A (en) * | 2006-07-10 | 2008-01-15 | 삼성전자주식회사 | Semiconductor device manufacturing apparatus for preventing generation of particles in the chamber |
JP5058848B2 (en) * | 2008-03-05 | 2012-10-24 | 東京エレクトロン株式会社 | Transport arm cleaning apparatus, transport arm cleaning method, program, and computer storage medium |
-
2011
- 2011-03-02 JP JP2011045219A patent/JP5734705B2/en not_active Expired - Fee Related
- 2011-09-16 KR KR1020110093580A patent/KR101221162B1/en not_active Expired - Fee Related
- 2011-09-26 TW TW100134597A patent/TWI434335B/en not_active IP Right Cessation
Also Published As
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KR101221162B1 (en) | 2013-01-21 |
KR20120100685A (en) | 2012-09-12 |
JP2012182371A (en) | 2012-09-20 |
JP5734705B2 (en) | 2015-06-17 |
TWI434335B (en) | 2014-04-11 |
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