201233828 六、發明說明： 【發明所屬之技術領域】 本發明係有關一種靶及具備該靶之成膜裝置。 【先前技術】 作爲用於成膜裝置之靶已知有如專利文獻1所示之例 如藉由銦等的黏結劑固定於保持構件（靶電極）者（以下 示爲“結合靶”）。然而，在這種結合靶中，若要更換消耗 之靶’黏結於靶之保持構件也需要一同更換。因此，存在 進行其更換時需要時間及成本之類的問題。 作爲解決這種問題之技術，公開有有關如專利文獻2 所示之載置於保持構件的上面且藉由夾具固定於保持構件 (靶托）之靶（以下示爲“未結合靶”）之技術。 (先前技術文獻） (專利文獻） 專利文獻1:日本特開平8-291 3 82號公報 專利文獻2:日本特開2004- 1 93 08 3號公報 【發明內容】 (本發明所欲解決之課題） 然而，如上述所示之未結合靶中，由於靶藉由夾具按 壓於保持構件，因此基於夾具之按壓部份需要具有能夠承 受該按壓之強度。但是，一般耐破裂性較弱之燒結體靶很 難確保所述強度。因此’燒結體靶採用藉由銦等的黏結劑 -5- 201233828 固定於保持構件之結合靶，一直未能消除靶的更換需要時 間及成本之類的問題。 本發明的目的在於提供一種即使爲燒結體靶亦能夠降 低運轉成本之靶及具備該靶之成膜裝置。 (用以解決課題之手段） 爲了解決上述課題，本發明的藉由夾具固定於保持構 件之靶，其特徵爲，該靶爲包含金屬粉體和熔點高於金屬 熔點之金屬氧化物粉體之混合物以由(其中，上述 公式中to爲金屬的熔點，^爲金屬氧化物的熔點或昇華點 )表示之燒結溫度T燒結之低氧化物燒結體。 這種靶與不含金屬作爲構成成份之燒結體靶相比耐破 裂性變高，因此能夠降低因基於夾具之按壓而損壞靶之虞 。其結果，即使爲燒結體靶，更換靶時，亦無需更換包含 保持構件之整個靶裝置而能夠僅更換靶，並能夠降低運轉 成本。 並且，金屬爲Zn、Sn、Pb、Bi、In、A1及Ga中的任一 種爲較佳。藉此，在上述燒結溫度T的條件下輕松燒結金 屬粉體與金屬氧化物粉體的混合物。 並且，該燒結體中，與接觸於保持構件之接觸面平行 之面內方向上的外側端部與中央部相比，金屬相對於金屬 氧化物之成份比例較高爲較佳。藉此，能夠形成使靶的面 內方向上的外側端部的耐破裂性高於中央部之靶。其結果 ，能夠提高藉由夾具按壓之部份的耐破裂性，因此能夠進 ⑧ -6 - 201233828 一步減少降低藉由夾具固定靶時損壞靶之虞。 並且’燒結體的體積電阻率爲0.05Ω.Π1以下爲較佳。 藉此’實施濺射時，能夠將靶的導電性確保爲可實施基於 直流濺射法或交流濺射法之濺射之程度。其結果，能夠確 保穩定的放電。 並且’燒結體的燒結相對密度爲90%以上爲較佳。“燒 結相對密度”係指與內部沒有空隙之靶相比之容積的比率 。一般若空隙量較多，則靶表面的凹凸變得明顯而成爲濺 射時發生粒子或電弧之原因。這種靶裝置中，由於能夠降 低空隙量’因此能夠防止濺射時發生粒子或電弧，且能夠 生成高品質的薄膜。 並且，構成金屬氧化物之金屬元素可爲Zn。藉此能夠 輕松形成耐破裂性優異之陶瓷靶。 本發明的成膜裝置藉由將靶中所含之成膜材料附著於 基板來進行成膜，其特徵爲，具備有真空容器、於真空容 器內保持上述靶之保持構件及固定靶和保持構件之夾具》 這種成膜裝置中，靶與不含單體金屬作爲構成成份之 燒結體靶相比確保耐破裂性，因此能夠藉由夾具固定於保 持構件。其結果，即使爲燒結體靶，更換靶時，亦無需更 換包含保持構件之整個靶裝置而能夠僅更換靶，並能夠降 低運轉成本。 並且，於保持構件與靶之間配置有與保持構件及靶的 相互對置面接觸之熱傳導性薄膜構件爲較佳。其中，保持 構件有時使用接觸靶來冷卻之冷卻板。此時，即使在靶及 201233828 保持構件相互接觸之表面上有凹凸時，由於導電性薄膜構 件塡滿形成於相互對置面之間之空隙，因此亦可充份確保 靶與保持構件的接觸面積。其結果，能夠得到靶與保持構 件之間的良好的熱傳導性。 (發明之效果） 依本發明的靶及具備該靶之成膜裝置，即使爲燒結體 靶，亦能夠降低運轉成本。 【實施方式】 參考附圖對本發明之靶的較佳實施方式進行說明。另 外，說明中對相同要件或具有相同功能之要件使用相同符 號，省略重複之說明。 第1圖係顯示具備本實施方式之靶之成膜裝置的結構 之側視截面圖。第1圖中，示出XYZ正交坐標系’ Z軸方向 與上下方向對應。第2圖係顯示第1圖所示之靶裝置之側視 剖面圖。 本實施方式之靶25能夠應用於所謂藉由職射法進行成 膜之裝置。如第〗圖所示，這種成膜裝置〗主要具備有真空 容器10、電源11、排氣機構12、氣體導入機構13、基板托 架3及靶裝置2。 真空容器10由導電性材料形成’藉由後述之電源11外 加正電壓。電源11對真空容器10外加正電壓’對耙25外加 負電壓。排氣機構12包含未圖示之真空栗和閥並配置於真 -8 - ⑧ 201233828 空容器10的外側。排氣機構12使真空容器10內減壓至成膜 所需之狀態。氣體導入機構13配置於真空容器10的外側。 氣體導入機構13將濺射中使用之Ar等氣體加以02氣體等氧 化性氣體之氣體導入於真空容器1〇內部。基板托架3安裝 於真空容器1〇的內壁，配置於上下方向（第1圖所示之Z軸 )上與後述之靶裝置2對置之位置。基板托架3爲固定基板 31之構件，於基板托架3的上面安裝基板31。並且，基板 31透過真空容器10及基板托架3藉由電源11外加負電壓。 靶裝置2配置於真空容器10的內部，如第2圖所示，具 備有絕緣體21、冷卻板（保持構件）22、石墨片（熱傳導 性薄膜構件）24、靶25、夾具27及靶屏蔽28。 絕緣體21配置於真空容器10與後述之冷卻板22之間， 對真空容器10和固定有靶25之冷卻板22進行絕緣。藉此， 確保真空容器10與靶25的電位差。 冷卻板22透過絕緣體21安裝於真空容器10的內壁。於 冷卻板22的內部相對第2圖所示之XY平面以二維狀配置有 配管（未圖示）。藉由冷卻液在配管內部流動來對冷卻板 22自身進行冷卻。另外，冷卻板22例如由銅或鋁之類的熱 傳導性優異之金屬材料構成爲較佳。並且，當冷卻板22由 鋁構成時，若在該表面進行鋁陽極化處理，則更爲佳。並 且，作爲冷卻板22中使用之冷卻液，凝固點低於水之液體 (例如Fluorinert或Galden等）爲較佳。並且，配管例如由 銅或鋁之類的熱傳導性優異之金屬材料構成爲較佳。 靶25包含作爲薄膜材料的1種之ZnO而形成。靶25於成 201233828 膜裝置1中被設定爲陰極。而且，若電壓外加於成膜裝置1 中作爲陽極設定之真空容器1〇與靶25之間，則産生之等離 子體中的離子朝向靶25加速，該離子與靶25衝撞。而且， 藉由使因該衝撞而彈出之ZnO構成原子等附著或堆積於基 板3 1上來形成薄膜。 靶25爲作爲金屬粉體之Zn粉體和熔點高於Zn熔點之作 爲金屬氧化物粉體之ZnO粉體以高於Zn熔點且低於ZnO的 熔點或昇華點之溫度燒結之低氧化物燒結體（陶瓷）。這 裏所說之低氧化物係指包含少於由金屬元素的氧化數期待 之數量的氧，亦即引起氧缺損（與陶瓷的化學計量組成相 比）者。該靶25與不含Zn作爲構成成份之燒結體靶相比耐 破裂性變高，因此能夠降低因夾具的按壓而損壞靶之虞。 另外，作爲金屬粉體，不僅可以利用與構成金屬氧化物（ ZnO)之元素（Zn)相同者，亦可利用包含例如Sn、Pb、 Bi、In、Al、Ga等元素之粉體。並且，可以於金屬氧化物 的粉體中混合2種以上的金屬粉體來燒結。 並且，靶25形成爲，遠離該靶25的面內方向上的外側 端部5mm左右的區域，亦即外緣部26與靶25的中央部相比 金屬Zn相對於金屬氧化物ZnO之容量比（成份比例）較高 。藉此’在該靶25中外緣部26的耐破裂性比中央部的耐破 裂性優異。藉此’能夠進一步提高作爲藉由夾具2 7按壓之 部份之外緣部26的耐破裂性，並能夠更可靠地降低靶25藉 由夾具27固定於冷卻板22時損壞靶25之虞。另外，該靶25 中’即使提高靶25中比中央部更靠外緣部26中金屬Zn相對 -10- 201233828 於金屬氧化物ZnO之重量比（成份比例），亦能夠得到與 上述同樣的效果。 並且，靶25形成爲體積電阻率爲0.05Ω · m以下。藉此 ，能夠由直流電源充份濺射，能夠得到充份的成膜速度。 並且，靶25形成爲燒結相對密度爲90%以上。因此，靶25 中的空隙量降低，可以抑制形成於靶25的表面之凹凸。其 結果，能夠防止產生粒子或者產生電弧，並且能夠形成高 品質的薄膜。 石墨片24爲熱傳導性薄膜構件的1種，配置於冷卻板 22與後述之靶25之間。在此，有時於冷卻板22及靶25的表 面形成有凹凸，並有時於相互的面接觸之部份形成大量空 隙。石墨片24藉由塡滿這種空隙來充份確保靶25與冷卻板 22的接觸面積，從而能夠提高從靶25向冷卻板22的導熱效 率。 夾具27藉由螺栓等（未圖示）固定於冷卻板22。夾具 27將靶25按壓於冷卻板22，並將靶25固定於冷卻板22。並 且，夾具27與靶25的外緣部26抵接，將靶25按壓於冷卻板 22 » 靶屏蔽28透過絕緣物（未圖示）固定於真空容器10的 內壁，且配置於與靶25的外緣部26對置之位置。靶屏蔽28 防止於冷卻板22中的露出部（未被靶25覆蓋之部份）或夾 具2 7上形成膜。 接著，參考第3圖對本實施方式之靶的製造方法進行 說明。第3圖係顯示本實施方式之靶的製造方法之流程圖 -11 - 201233828 如第3圖所示，本實施方式之靶的製造方法中，首先 同時稱量作爲金屬粉體之Ζιι粉體和作爲金屬氧化物粉體之 ZnO粉體（步驟S1)。這時的ΖϋΟ粉體的粒徑爲1〜15μιη， Ζη粉體的粒徑大於ΖηΟ粉體的粒徑且爲10〜ΙΟΟμπι。 接著，將Ζη粉體、ΖηΟ粉體及外徑不同之鋼球投入於 桶狀容器中。接著，藉由旋轉（球磨混合）該容器來混合 Ζη粉體和ΖηΟ粉體（步驟S2 :混合製程）。接著，篩分步 驟S2中混合之Ζη粉體、ΖηΟ粉體及鋼球，從混合之Ζη粉體 及ΖηΟ粉體中分離鋼球（步驟S3)。 接著，將混合之Ζη粉體及ΖηΟ粉體塡充於作爲成型用 模板之碳製的碳質模型，與基於穿孔之加壓同時進行加熱 並燒結（熱壓）（步驟S4:燒結製程）。具體而言，將具 有塡充Ζη粉體及ΖηΟ粉體之塡充部之內下模內插於可內插 內下模之管狀外下模中。並且藉由由油壓活塞施加荷載之 穿孔從上下方向加壓塡充於塡充部之Ζη粉體及ΖηΟ粉體。 並且，一邊加壓一邊藉由配置於外下模的外側之線圈進行 高頻感應加熱。本實施方式中，藉由在作爲惰性氣體之氩 氣氣氛中實施燒結製程來防止Ζη粉體氧化而成爲金屬氧化 物 ΖηΟ(ΙΙ)。 這樣形成之低氧化物燒結體由於包含作爲金屬之Ζη， 因此與僅由作爲金屣氧化物之ΖηΟ形成之燒結體相比耐破 裂性優異。 並且，步驟S4中的燒結製程中，以滿足下述公式之燒 ⑧ -12- 201233828 結溫度Τ ’亦即以高於Zn的熔點t()且低於Zn〇的熔點或昇華 點h之溫度燒結。 t〇<T<ti (上述公式中to爲Zn的熔點，^爲ZnO的熔點或昇華點） 因此，例如藉此於形成塡充部之內下模的內周面形成 槽部，燒結工程中，熔融之Zn向該槽部移動。藉此，Zn比 充塡部的中心部更集中於接近形成槽部之內下模的內周面 之塡充部的外側部份。藉此，燒結塡充於塡充部之Zn粉體 及ZnO粉體之燒結體中在面內方向上比中央部更靠外緣部 的Zn相對於ZnO之容量比變高。藉此，該靶中能夠使外緣 部的耐破裂性高於靶的面內方向上的中央部。 以上說明之本實施方式的靶25爲作爲金屬粉體之Ζ η粉 體和熔點高於Zn熔點之作爲金屬氧化物之ZnO粉體以高於 Zn的熔點t〇且低於ZnO的熔點或昇華點t|之溫度T燒結之低 氧化物燒結體，因此與不含Zn作爲構成成份之燒結體相比 耐破裂性變高。因此，即使藉由夾具27將靶25安裝於冷卻 板22時，亦能夠降低因夾具27的按壓而損壞靶25之虞。其 結果即使爲燒結體靶25，亦能夠在更換靶25時僅更換靶25 ，因此能夠降低運轉成本。 另外’作爲與習知之僅由金屬氧化物粉體燒結之燒結 體相比本實施方式的靶25的耐破裂性變高之理由之一可考 慮到如下。亦即，熱傳導特性及電傳導特性一般以金屬氧 化物、低氧化物、金屬的順序優異。因此，低氧化物燒結 體靶25易將濺射熱傳送於冷卻板22並易被冷卻。因此，可 •13- 201233828 以認爲濺射時靶25的溫度差變小而耐破裂性提高。 以上，依上述實施方式對本發明進行了詳細說明。但 是，本發明並不限定於上述實施方式。本發明在不脫離其 宗旨之範圍內可進行如下各種變形。 上述實施方式中，以作爲燒結作爲金屬之Zn粉體和作 爲金屬氧化物之ZnO粉體之低氧化物燒結體之靶25爲例子 進行了說明，但不限定於此。例如，可爲作爲燒結作爲金 屬之Zn粉體和作爲金屬氧化物之ZnO粉體及MgO粉體之低 氧化物燒結體之靶。只要爲滿足金屬與熔點高於該金屬的 熔點之金屬氧化物的組合之類的條件，則可爲混合例如Zn 、Sn、Pb、Bi、In' A1及Ga中的任一種金屬及金屬氧化物 來燒結之低氧化物燒結體。並且，只要爲上述條件，則作 爲金屬之元素和構成金屬氧化物之金屬元素也可互不相同 並且，上述實施方式中，利用靶25應用於所謂藉由濺 射法進行成膜之裝置之例子進行了說明，但不限定於此， 亦能夠應用於例如藉由RPD法（反應性等離子體蒸鍍法） 進行成膜之裝置。 【圖式簡單說明】 第1圖係顯示包含本實施方式之靶之成膜裝置的結構 之側視剖面圖。 第2圖係顯示第1圖的靶之側視剖面圖。 第3圖係顯示本實施方式之靶的製造方法之流程圖。 ⑧ -14- 201233828 【主要元件符號說明】 1 :成膜裝置 2 :靶裝置 3 :基板托架 10 :真空容器 1 1 :電源 1 2 :排氣機構 13 :氣體導入機構 2 1 :絕緣體 22 :冷卻板 24 :石墨片 25 :耙 2 6 :外緣部 27 :夾具 28 :靶屏蔽 31 :基板201233828 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a target and a film forming apparatus including the same. [Prior Art] As a target for a film forming apparatus, as disclosed in Patent Document 1, for example, a bonding agent (target electrode) is fixed to a holding member (target electrode) by a bonding agent such as indium (hereinafter referred to as "binding target"). However, in such a bonded target, it is necessary to replace the holding member which is bonded to the target in order to replace the consumed target. Therefore, there is a problem in that it takes time and cost to perform replacement thereof. As a technique for solving such a problem, a target (hereinafter referred to as "unbound target") which is placed on a holding member and is fixed to a holding member (target holder) by a jig as disclosed in Patent Document 2 is disclosed. technology. (Prior Art Document) (Patent Document) Patent Document 1: Japanese Laid-Open Patent Publication No. Hei No. 8-291 No. Hei. No. Hei. No. Hei. However, in the unbound target as described above, since the target is pressed against the holding member by the jig, the pressing portion based on the jig needs to have the strength capable of withstanding the pressing. However, it is difficult to secure the strength of a sintered body target which is generally resistant to cracking. Therefore, the sintered target is fixed to the bonded target of the holding member by a bonding agent such as indium -5 - 201233828, and the problem of the time and cost of replacement of the target has not been eliminated. An object of the present invention is to provide a target capable of reducing running cost even for a sintered body target and a film forming apparatus including the same. (Means for Solving the Problem) In order to solve the above problems, a target fixed to a holding member by a jig according to the present invention is characterized in that the target is a metal oxide powder containing a metal powder and a melting point higher than a melting point of the metal. The mixture is an asbestos sintered body sintered at a sintering temperature T represented by (wherein in the above formula, to is the melting point of the metal, ^ is the melting point or sublimation point of the metal oxide). Such a target has higher crack resistance than a sintered body target containing no metal as a constituent component, and therefore it is possible to reduce damage to the target due to pressing by the jig. As a result, even when the target is replaced by the sintered body target, it is not necessary to replace the entire target device including the holding member, and only the target can be replaced, and the running cost can be reduced. Further, the metal is preferably any of Zn, Sn, Pb, Bi, In, A1 and Ga. Thereby, the mixture of the metal powder and the metal oxide powder is easily sintered under the above-described sintering temperature T. Further, in the sintered body, the outer end portion in the in-plane direction parallel to the contact surface contacting the holding member is preferably higher in composition ratio of the metal to the metal oxide than the central portion. Thereby, it is possible to form a target in which the crack resistance of the outer end portion in the in-plane direction of the target is higher than that of the center portion. As a result, the crack resistance of the portion pressed by the jig can be improved, so that it is possible to reduce the damage of the target when the target is fixed by the jig by stepping into 8 -6 - 201233828. Further, the volume resistivity of the sintered body is preferably 0.05 Ω. Π1 or less is preferable. By this, when the sputtering is performed, the conductivity of the target can be ensured to the extent that sputtering by the direct current sputtering method or the alternating current sputtering method can be performed. As a result, stable discharge can be ensured. Further, the sintered relative density of the sintered body is preferably 90% or more. "Sintered relative density" refers to the ratio of the volume compared to a target having no internal voids. Generally, if the amount of voids is large, the unevenness of the surface of the target becomes conspicuous and causes particles or arcs to occur during sputtering. In such a target device, since the amount of voids can be reduced, particles or arcs can be prevented from occurring during sputtering, and a high-quality film can be produced. Further, the metal element constituting the metal oxide may be Zn. This makes it easy to form a ceramic target excellent in crack resistance. The film forming apparatus of the present invention is formed by adhering a film forming material contained in a target to a substrate, and is characterized in that it includes a vacuum container, a holding member for holding the target in the vacuum container, and a fixed target and a holding member. In the film forming apparatus, since the target is more resistant to cracking than the sintered body target containing no monomer metal as a constituent component, it can be fixed to the holding member by a jig. As a result, even when the target is replaced by the sintered body target, it is not necessary to replace the entire target device including the holding member, and only the target can be replaced, and the running cost can be reduced. Further, it is preferable to arrange a thermally conductive film member which is in contact with the opposing faces of the holding member and the target between the holding member and the target. Among them, the holding member sometimes uses a cooling plate that contacts the target to cool. At this time, even if the surface of the target and the 201233828 holding member are in contact with each other, since the conductive film member is formed in the gap between the opposing faces, the contact area between the target and the holding member can be sufficiently ensured. . As a result, good thermal conductivity between the target and the holding member can be obtained. (Effect of the Invention) According to the target of the present invention and the film forming apparatus including the target, the operating cost can be reduced even if it is a sintered body target. [Embodiment] A preferred embodiment of a target of the present invention will be described with reference to the accompanying drawings. In the description, the same symbols are used for the same elements or elements having the same functions, and the description of the duplicates is omitted. Fig. 1 is a side sectional view showing the structure of a film forming apparatus provided with a target of the present embodiment. In Fig. 1, the XYZ orthogonal coordinate system 'Z-axis direction is shown to correspond to the vertical direction. Fig. 2 is a side sectional view showing the target device shown in Fig. 1. The target 25 of the present embodiment can be applied to a device that performs film formation by a job shooting method. As shown in Fig. 1, the film forming apparatus mainly includes a vacuum container 10, a power source 11, an exhaust mechanism 12, a gas introduction mechanism 13, a substrate holder 3, and a target device 2. The vacuum vessel 10 is formed of a conductive material. A positive voltage is applied from a power source 11 to be described later. The power source 11 applies a positive voltage to the vacuum vessel 10 and applies a negative voltage to the 耙25. The exhaust mechanism 12 includes a vacuum pump and a valve (not shown) and is disposed outside the empty container 10 of the true -8 - 8 201233828. The exhaust mechanism 12 decompresses the inside of the vacuum vessel 10 to a state required for film formation. The gas introduction mechanism 13 is disposed outside the vacuum vessel 10. The gas introduction mechanism 13 introduces a gas such as Ar used for sputtering into a gas of an oxidizing gas such as 02 gas into the inside of the vacuum vessel 1 . The substrate holder 3 is attached to the inner wall of the vacuum chamber 1 and is disposed at a position facing the target device 2 to be described later in the vertical direction (the Z axis shown in Fig. 1). The substrate holder 3 is a member for fixing the substrate 31, and the substrate 31 is mounted on the upper surface of the substrate holder 3. Further, the substrate 31 is applied with a negative voltage from the power source 11 through the vacuum container 10 and the substrate holder 3. The target device 2 is disposed inside the vacuum container 10, and as shown in FIG. 2, is provided with an insulator 21, a cooling plate (holding member) 22, a graphite sheet (thermal conductive film member) 24, a target 25, a jig 27, and a target shield 28. . The insulator 21 is disposed between the vacuum vessel 10 and a cooling plate 22 to be described later, and insulates the vacuum vessel 10 from the cooling plate 22 to which the target 25 is fixed. Thereby, the potential difference between the vacuum vessel 10 and the target 25 is ensured. The cooling plate 22 is attached to the inner wall of the vacuum vessel 10 through the insulator 21. A pipe (not shown) is disposed two-dimensionally in the XY plane shown in Fig. 2 inside the cooling plate 22. The cooling plate 22 itself is cooled by the flow of the coolant inside the pipe. Further, the cooling plate 22 is preferably made of a metal material having excellent thermal conductivity such as copper or aluminum. Further, when the cooling plate 22 is made of aluminum, it is more preferable if an aluminum anodizing treatment is performed on the surface. Further, as the cooling liquid used in the cooling plate 22, a liquid having a freezing point lower than water (e.g., Fluorinert or Galden, etc.) is preferable. Further, the piping is preferably made of a metal material having excellent thermal conductivity such as copper or aluminum. The target 25 is formed by containing one type of ZnO as a film material. The target 25 is set as a cathode in the membrane device 1 in 201233828. Further, when a voltage is applied between the vacuum vessel 1A and the target 25 set as the anode in the film forming apparatus 1, the ions in the generated plasma are accelerated toward the target 25, and the ions collide with the target 25. Further, a thin film is formed by adhering or depositing ZnO constituent atoms or the like which are ejected by the collision on the substrate 31. The target 25 is a low-oxide sintering in which a Zn powder as a metal powder and a ZnO powder having a melting point higher than a melting point of Zn as a metal oxide powder are sintered at a temperature higher than a melting point of Zn and a melting point or a sublimation point of ZnO. Body (ceramic). As used herein, the term "low oxide" means oxygen containing less than the amount expected from the oxidation number of the metal element, i.e., causing oxygen deficiency (compared to the stoichiometric composition of the ceramic). Since the target 25 has higher fracture resistance than a sintered body target containing no Zn as a constituent component, it is possible to reduce damage to the target due to pressing of the jig. In addition, as the metal powder, not only the same element as the element (Zn) constituting the metal oxide (ZnO) but also a powder containing an element such as Sn, Pb, Bi, In, Al, or Ga can be used. Further, two or more kinds of metal powders may be mixed in a powder of a metal oxide to be sintered. Further, the target 25 is formed in a region of about 5 mm away from the outer end portion of the target 25 in the in-plane direction, that is, the ratio of the capacity of the metal Zn to the metal oxide ZnO in the outer edge portion 26 compared with the central portion of the target 25. (Proportion of ingredients) is higher. Thereby, the crack resistance of the outer edge portion 26 in the target 25 is superior to the crack resistance at the center portion. Thereby, the crack resistance of the outer edge portion 26 which is pressed by the jig 27 can be further improved, and the target 25 can be more reliably reduced when the target 25 is damaged by the fixing plate 22 when the jig 27 is fixed to the cooling plate 22. Further, in the target 25, even if the weight ratio (component ratio) of the metal Zn to the metal oxide ZnO in the outer edge portion 26 of the target portion 25 is increased, the same effect as described above can be obtained. . Further, the target 25 is formed to have a volume resistivity of 0.05 Ω·m or less. Thereby, it can be fully sputtered by a DC power source, and a sufficient film formation speed can be obtained. Further, the target 25 is formed to have a sintered relative density of 90% or more. Therefore, the amount of voids in the target 25 is lowered, and irregularities formed on the surface of the target 25 can be suppressed. As a result, generation of particles or arc generation can be prevented, and a high-quality film can be formed. The graphite sheet 24 is one type of a thermally conductive film member, and is disposed between the cooling plate 22 and a target 25 to be described later. Here, irregularities may be formed on the surfaces of the cooling plate 22 and the target 25, and a large number of voids may be formed in portions where the surfaces are in contact with each other. The graphite sheet 24 sufficiently fills the contact area of the target 25 with the cooling plate 22 by filling such a gap, thereby improving the heat transfer efficiency from the target 25 to the cooling plate 22. The jig 27 is fixed to the cooling plate 22 by a bolt or the like (not shown). The jig 27 presses the target 25 against the cooling plate 22, and fixes the target 25 to the cooling plate 22. Further, the jig 27 is in contact with the outer edge portion 26 of the target 25, and the target 25 is pressed against the cooling plate 22 » The target shield 28 is fixed to the inner wall of the vacuum container 10 through an insulator (not shown), and is disposed on the target wall 25 The outer edge portion 26 is opposed to the position. The target shield 28 prevents the formation of a film on the exposed portion (the portion not covered by the target 25) or the holder 27 in the cooling plate 22. Next, a method of manufacturing the target of the present embodiment will be described with reference to Fig. 3 . Fig. 3 is a flow chart showing a method for producing a target according to the present embodiment. -11 - 201233828 As shown in Fig. 3, in the method for producing a target of the present embodiment, first, the Ζι powder and the metal powder are simultaneously weighed and ZnO powder as a metal oxide powder (step S1). The particle size of the niobium powder at this time is 1 to 15 μm, and the particle diameter of the niobium powder is larger than the particle diameter of the niobium powder and is 10 to ΙΟΟμπι. Next, the Ζη powder, the ΖηΟ powder, and the steel balls having different outer diameters were placed in a barrel container. Next, the Ζn powder and the ΟηΟ powder are mixed by spinning (ball milling) (step S2: mixing process). Next, the Ζη powder, the ΖηΟ powder and the steel balls mixed in the step S2 are sieved, and the steel balls are separated from the mixed Ζη powder and the ΖηΟ powder (step S3). Then, the mixed Ζη powder and the ΖηΟ powder are immersed in a carbonaceous carbon model as a template for molding, and heated and sintered (hot pressing) simultaneously with pressurization by perforation (step S4: sintering process). Specifically, the inner lower mold having the Ζ 粉 powder and the Ζ Ο powder is interposed in the tubular outer lower mold which can be inserted into the inner lower mold. Further, the Ζn powder and the ΟηΟ powder which are filled in the nip portion are pressurized from the upper and lower sides by the perforation of the load applied by the hydraulic piston. Further, high-frequency induction heating is performed by a coil disposed outside the outer lower mold while being pressurized. In the present embodiment, the sintering process is carried out in an argon atmosphere as an inert gas to prevent oxidation of the Ζη powder to become a metal oxide ΖηΟ. Since the thus-formed low-oxide sintered body contains Ζη as a metal, it is excellent in fracture resistance as compared with a sintered body formed only of ΖηΟ which is a gold lanthanum oxide. Further, in the sintering process in the step S4, the junction temperature Τ ', which is higher than the melting point t() of Zn and lower than the melting point or sublimation point h of Zn, is satisfied by the following formula: sintering. T〇<T<ti (wherein is the melting point of Zn, and ^ is the melting point or sublimation point of ZnO). Therefore, for example, a groove portion is formed by forming the inner peripheral surface of the inner lower mold of the filling portion, and the sintering process The molten Zn moves to the groove portion. Thereby, Zn is concentrated more on the outer portion of the charging portion close to the inner peripheral surface of the inner lower mold forming the groove portion than the center portion of the filling portion. As a result, in the sintered body of the Zn powder and the ZnO powder which are filled in the entangled portion, the capacity ratio of Zn to the outer edge portion of the lining direction in the in-plane direction is higher than that of the ZnO. Thereby, in the target, the crack resistance of the outer edge portion can be made higher than the central portion in the in-plane direction of the target. The target 25 of the present embodiment described above is a powder of Ζ η as a metal powder and a ZnO powder as a metal oxide having a melting point higher than the melting point of Zn, which is higher than the melting point t Zn of Zn and lower than the melting point or sublimation of ZnO. Since the low-oxide sintered body sintered at the temperature T of the point t| is formed, the crack resistance is higher than that of the sintered body containing no Zn as a constituent component. Therefore, even when the target 25 is attached to the cooling plate 22 by the jig 27, the flaw of the target 25 due to the pressing of the jig 27 can be reduced. As a result, even if it is the sintered compact target 25, only the target 25 can be replaced when the target 25 is replaced, so that the running cost can be reduced. Further, as one of the reasons why the crack resistance of the target 25 of the present embodiment is higher than that of the sintered body which is sintered only by the metal oxide powder, it can be considered as follows. That is, the heat conduction characteristics and the electric conduction characteristics are generally excellent in the order of metal oxides, suboxides, and metals. Therefore, the low-oxide sintered body target 25 easily transfers the sputtering heat to the cooling plate 22 and is easily cooled. Therefore, it can be considered that the temperature difference of the target 25 at the time of sputtering becomes small and the crack resistance is improved. Hereinabove, the present invention has been described in detail based on the above embodiments. However, the present invention is not limited to the above embodiment. The present invention can be modified as follows without departing from the spirit and scope of the invention. In the above embodiment, the target 25 of the low-oxide sintered body of the Zn powder as the metal and the ZnO powder as the metal oxide is described as an example, but the invention is not limited thereto. For example, it may be a target of a sintered Zn powder as a metal and a ZnO powder as a metal oxide and a low-oxide sintered body of a MgO powder. Any metal and metal oxide such as Zn, Sn, Pb, Bi, In' A1, and Ga may be mixed as long as it satisfies conditions such as a combination of a metal and a metal oxide having a melting point higher than the melting point of the metal. The sintered low oxide sintered body. In addition, as long as the above conditions are the same, the element as the metal and the metal element constituting the metal oxide may be different from each other. In the above embodiment, the target 25 is applied to an apparatus for forming a film by a sputtering method. Although the description has been made, the present invention is not limited thereto, and can be applied to, for example, an apparatus for forming a film by an RPD method (reactive plasma deposition method). BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side cross-sectional view showing the structure of a film forming apparatus including a target of the present embodiment. Fig. 2 is a side sectional view showing the target of Fig. 1. Fig. 3 is a flow chart showing a method of manufacturing the target of the embodiment. 8 -14- 201233828 [Description of main components] 1 : Film forming apparatus 2 : Target apparatus 3 : Substrate holder 10 : Vacuum container 1 1 : Power supply 1 2 : Exhaust mechanism 13 : Gas introduction mechanism 2 1 : Insulator 22 : Cooling plate 24: graphite sheet 25: 耙2 6 : outer edge portion 27: jig 28: target shield 31: substrate