TW201232820A - Semiconductor light emitting structure - Google Patents

Abstract

A semiconductor light emitting structure includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer and two electrodes. The substrate has a top surface and a bottom surface. The top surface is not parallel to the bottom surface. The first semiconductor layer is disposed on the top surface. The active layer is disposed on at least one portion of the first semiconductor layer. The second semiconductor layer is disposed on the active layer. In an embodiment, the top surface can be realized by an oblique surface, a curved surface or a zigzag surface.

Description

201232820

i W/4y»KA VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting element, and more particularly to a semiconductor light-emitting structure. [Prior Art] Since the Light-Emitting Diode (LED) has the advantages of long life, small size, low vibration, low heat dissipation, and low energy consumption, the light-emitting diode has been widely used for indicator lights or home light sources. In the device. In recent years, with the development of multi-color gamut and high brightness, light-emitting diodes have been applied to large display billboards and traffic signs. In the near future, light-emitting diodes will become more energy-efficient, avoiding environmental damage and replacing traditional tungsten filament bulbs and mercury tubes. The light-emitting diode is a semiconductor light-emitting element, and its main components are a substrate, an epitaxy layer, and two external electrodes. The epitaxial layer includes an N-type semiconductor layer, a P-type semiconductor layer, and a light-emitting layer between the N-type and P-type semiconductor layers. When a voltage is applied across the positive and negative electrodes of the light-emitting diode, electrons are combined with the holes in the light-emitting layer and then emitted as light. However, the refractive index of the substrate of the light-emitting diode is generally larger than the refractive index of the semiconductor layer, so that the problem that the emitted light of the substrate larger than the total reflection angle is totally reflected at the interface between the substrate and the semiconductor layer, thereby causing Most of the light is confined inside the substrate and cannot be removed, resulting in poor light extraction efficiency. 201232820

TW7498PA SUMMARY OF THE INVENTION The present invention relates to a semiconductor light emitting structure, such that most of the light emitted from the light emitting layer can be reflected or scattered at the interface of the semiconductor layer and the substrate, so that the light can be emitted outward, thereby improving light extraction. effectiveness. According to an aspect of the invention, a semiconductor light emitting structure is provided, comprising a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer: the substrate has an upper surface and a lower surface, an upper surface and a lower surface Not flat. The first semiconductor layer is disposed on the upper surface. The light emitting layer is disposed on at least a portion of the surface of the first semiconductor. The second semiconductor layer is disposed on the light emitting layer. In another aspect of the invention, a semiconductor light emitting structure, a germanium substrate, a patterned structure, a first semiconductor layer, a light emitting reed, and a second semiconductor layer are provided. The substrate has an upper surface and a lower surface: the surface is not parallel to the lower surface, and the upper surface is a curved surface, a beveled surface or an A-patterned structure protruding or recessed on the upper surface to make the upper surface into the first half ^ The first semiconductor layer is disposed on the roughened surface. The luminescent layer is disposed on the optical layer, at least on a portion of the surface. The second semiconductor layer is disposed on the semiconductor-emitting structure, and has a conductor: a light-emitting layer and a second semiconductor layer. The first conductor I, the upper surface and the lower surface, the above table: Millennium. The light emitting layer is disposed on the upper surface of the first semiconductor. The first layer is disposed on the light emitting layer.弟一+conductor According to another aspect of the present invention, a semiconductor light emitting structure is proposed ’ 4 201232820

1 W7498PA includes a -th semiconductor layer, a patterned structure, a light emitting layer, and a second semiconductor layer. The first semiconductor layer has an upper surface and a lower surface. The upper surface is not parallel to the lower surface, and the upper surface is a curved surface or a curved surface. The patterned structure is convex or recessed on the upper surface to make the upper surface a roughened surface. The light emitting layer is disposed on the roughened surface. The second semiconductor layer is disposed on the light emitting layer. In order to better understand the above and other aspects of the present invention, the preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The inclined upper surface of the material or the inclined upper surface having the patterned structure, the wire is reflected or scattered at a parent angle of the substrate and the semiconductor layer (P-type or N-type semiconductor layer) at an incident angle greater than the total reflection angle. Since the interface between the substrate and the semiconductor layer is not a horizontal plane with respect to the light-emitting layer, so that the degree of light reflection or light scattering is significantly increased, thereby improving the light extraction efficiency. The following is a detailed description of various embodiments, which are intended to be illustrative only and not to limit the scope of the invention. In the first and second types of embodiments, the sapphire substrate, the carbonized stone substrate or the stone substrate is used as a carrier, and a gallium nitride crystal layer is formed on the substrate, and the order includes a N. a semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The portion is a P-type semiconductor layer which exposes a surface of a portion of the N-type semiconductor layer. The P-side electrode is formed on the surface of the P-type semiconductor layer on the exposed surface of the N-type semiconductor layer such that the two electrodes of the semiconductor are respectively disposed at corners in the diagonal direction or opposite sides

201232820 TW7498PA side view, as shown in the figure 17A~17H. In the third and fourth types of embodiments, the indium gallium delphiide epitaxial layer sequentially includes an N-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer. Two opposite side electrodes are respectively formed on the upper surface of the p-type semiconductor layer and the lower surface of the N-type semiconductor layer. One of the electrodes (P side electrode or N side electrode) is arranged as shown in the top view of Figs. 18A to 18E. First Type Embodiment Referring to Figures 1A and 1B, there are shown schematic cross-sectional views of a semiconductor light emitting structure in accordance with an embodiment of the present invention. The semiconductor light emitting structure includes a substrate 110, a first semiconductor layer 120, a light emitting layer 13A, a second semiconductor layer 140, and two electrodes 122, 124. The substrate 11 has an upper surface 112 and a lower surface 114. Upper surface 112 is not parallel to lower surface 114. The first semiconductor layer 120 is disposed on the upper surface 112. The light emitting layer 13 is disposed on at least a portion of the surface of the first semiconductor layer 12A. The second semiconductor layer 140 is disposed on the light-emitting layer 13A. In an embodiment, the upper surface 112 can be a sloped surface that slopes to the left or to the right. The inclination angle 0 of the upper surface 112 with respect to the lower surface 114 is about 5 to 3 degrees, but is not limited thereto. The light ray s emitted from the light-emitting layer 130 toward the upper surface 112 can be reflected or scattered to the left or right side of the semiconductor light-emitting structure 1 , to avoid the two electrodes 122, 124 located above the semiconductor light-emitting structure 100. 2A and 2B are views showing a cross-sectional view of a semiconductor light emitting structure in accordance with an embodiment of the present invention. The semiconductor light-emitting structure of this embodiment is similar in form to the semiconductor light-emitting structure 1A shown in Figs. 1A and 1B, and the same reference numerals are not shown, the difference being that the upper surface 112 has 201232820

I W749»PA An inclined recess 111 or an inclined projection 113 can be inclined toward the left and right sides. The inclined recessed portion 111 or the inclined convex portion 113 has a first inclined surface 112a and a second inclined surface 112b connected to a boundary line L. The first inclined surface 112a and the second inclined surface 112b have inclination angles 01 and 02 of about 5 to 30 degrees with respect to the lower surface 114, respectively, but are not limited thereto. The light emitted from the light-emitting layer 13A toward the inclined upper surface may be reflected or scattered to the left and right sides of the semiconductor light-emitting structure 100 to avoid the two electrodes 122, 124 located above the semiconductor light-emitting structure 1''. Referring to Figures 3A and 3B, a cross-sectional view of a half-body light emitting structure in accordance with an embodiment of the present invention is shown. The semiconductor light-emitting structure of the present embodiment has a form similar to that of the semiconductor light-emitting structure 1A shown in FIGS. 1A and 1B, and the same reference numerals are not used. The difference is that the upper surface 112 is a meandering surface having two tilts. The number of the recesses 115, 116 or the two inclined projections 117, 118 is not limited. Each of the inclined recessed portions U5, 116 or the inclined convex portions 117, 118 has a first inclined surface n2a and a second inclined surface 112b which are connected to the respective boundary lines L. The first beveled face and the second beveled face 112b have an inclination angle of about 5 to 30 degrees with respect to the lower table ® 114, respectively, but are not limited thereto. The light emitted from the light-emitting layer 13G toward the upper surface of the meandering may be reflected or scattered to the left and right sides of the semiconductor light-emitting structure to avoid the two electrodes located above the semiconductor light-emitting structure _ reference to Figures 4A and 4B, and the green color is in accordance with the present EMBODIMENT OF THE INVENTION - A schematic view of a cross-section of a light-emitting structure. The semiconductor light-emitting junction of the present embodiment has the same reference numerals as the semiconductor light-emitting structure 100 shown in the u and 1β patterns, and the difference is that the upper surface is a curved surface 201232820

TW7498PA 112c, and the slope of the tangent τ on the curved surface 112C is gradually increased or decreased from one side to the other to form a concave curved surface or a convex curved surface, as shown in Figures 4 and 4. The tangent τ passing through the concave curved surface or the convex curved surface has an inclination angle of about 0 to 30 degrees with respect to the lower surface 114. The light emitted from the light-emitting layer 13 〇 toward the curved surface U2c can be reflected or scattered to the left or right side of the semiconductor light-emitting structure 1 , to avoid the two electrodes 122, 124 located above the semiconductor light-emitting structure 1A. Referring to Figures 5A and 5B, there are shown cross-sectional views of a semiconductor light emitting structure in accordance with an embodiment of the present invention. The first inclined surface 112a and the second inclined surface 112b shown in FIGS. 2 and 2B respectively have different inclination angles, that is, 0 1 off 02, but in the present embodiment, the 'inclined concave portion ln or the inclined convex portion 113 is located. The substrate 11 is centrally located, and the first slope U2a and the second slope 112b have the same inclination angle, that is, 01=02. The inclination angle of the first slope 112 & and the second slope 112b with respect to the lower surface 丨丨 4 is about 5 to 3 degrees, but is not limited thereto. Second Type of Embodiment Referring to Figures 6A to 6C, there are shown schematic cross-sectional views of a semiconductor light emitting structure in accordance with an embodiment of the present invention. The semiconductor light emitting structure 2 includes a substrate 210, a patterned structure 2, a first semiconductor layer 22, a light layer 230, and a first semiconductor layer 240. Substrate 210 has an upper surface 212 and a lower surface 214. Upper surface 212 is not parallel to lower surface 214. The upper surface 212 can be a curved surface, a beveled surface, or a meandering surface. The patterned structure 202 is convex or recessed on the upper surface 212 such that the upper surface 212 becomes a roughened surface. The first semiconductor layer 220 is disposed on the roughened upper surface 212. 201232820

Ί W7498FA The light emitting layer 230 is disposed on at least a portion of the surface of the first semiconductor layer 22A. The second semiconductor layer 240 is disposed on the light emitting layer 23A. The circular area shown in Fig. 6 has been enlarged to the 21st and 21st. Referring to ',, 21, 21 and 21', the upper surface 212 is a bevel, and the patterned structure 202 has a plurality of tip portions 2〇4, wherein the tip portion 204 has a vertical upper surface 212 on the line c Figure 21) or vertical lower surface 214 (Fig. 21). In addition, in the embodiment of FIG. 6 , the upper surface is a curved surface 212c, and the patterned structure 202 has a plurality of tip portions 2〇4, and the lines c of the tips 4 204 are consistently intersected and correspondingly curved. The tangent τ of 212c is perpendicular to each other. a In the embodiment of Fig. 6B, the upper surface 212 has an inclined depressed portion 211f or an inclined convex portion, such as the second β-Fig. The inclined recess has a first inclined surface 212a and a second inclined surface 212b connected to the intersection

On the line L. This embodiment is similar to the structure of FIG. 2A except for the patterned structure 202. The patterned structure 2〇2 has a plurality of tip portions. The line C among the tip portions 204 is substantially perpendicular to the first bevel 2 or the second bevel 212b. FIG. 7A to FIG. 7C are cross-sectional views showing a semiconductor light emitting structure according to an embodiment of the present invention. When the upper surface 212 has a slanted recess 211 (or a slanted projection, such as 帛 2B), the patterned structure 202 includes a singular microlens 2〇5 that protrudes or is recessed on the upper surface. The pattern of the micro lens 205 may be semicircular, tapered, quadrangular or trapezoidal. In the embodiment of Fig. 7B, a Bragg reflection layer 206 may be formed on the upper surface 212 of the substrate 210 to increase light extraction efficiency. . Figure 8A-8F of the monthly reference peptide, which is shown in accordance with an embodiment of the present invention 201232820

Schematic diagram of the TW7498PA semiconductor light-emitting structure. The patterned structure 2〇2 includes a plurality of columnar portions 207a, and the top surfaces of the columnar portions 2〇7a are separated from each other by a plurality of grooves 2〇7b between the adjacent columnar portions 207a. All of the top surfaces of the columnar portions 2〇7a are laid in a curved or tapered shape, and the heights of the respective columnar portions 2〇7a vary in height, for example, gradually increasing or decreasing. In the embodiment of Figures 8A-8C, all of the top surfaces of the columnar portions 2〇7a constitute an inwardly curved profile or an inwardly inclined profile, and the lowest height columnar portion 2〇7& At the center of the structure 202. In the embodiments of FIGS. 8D-8F, all of the top surfaces of the columnar portions 2 0 7a form an outwardly curved profile or an outwardly inclined profile and the highest height columnar portion 2〇7a is located in the patterned structure 202. Central office. According to a second type of embodiment, the upper surface 212 can be a curved surface, a beveled surface or a meandering surface. The patterned structure 202 can have a regular geometric pattern and/or an irregular geometric pattern, such as a microlens, a tip or a column, etc. to avoid exiting light from the substrate 21 that is greater than the total reflection angle in the substrate 210. The problem of total reflection occurs at the interface with the semiconductor layer 220, causing most of the light to be confined inside the substrate 210. Since light can be emitted outward from the substrate 210, the light extraction efficiency of the light emitting diode is increased. Third Type Embodiment Referring to Figure 9, a cross-sectional view of a semiconductor light emitting structure in accordance with an embodiment of the present invention is shown. The semiconductor light emitting structure 3 includes a first semiconductor layer 310, a light emitting layer 320, a second semiconductor layer 330, and two electrodes 322, 324 on opposite sides. The electrodes 322 and 324 are respectively disposed under the first semiconductor layer 310 and above the second semiconductor layer 330 201232820

W Central. The first semiconductor layer 310 has an upper surface 312 and a lower surface 314. Upper surface 312 is not parallel to lower surface 314. The light emitting layer 320 is disposed on the upper surface 312 of the first semiconductor layer 310. The second semiconductor layer 330 is disposed on the light emitting layer 320. In an embodiment, the upper surface 312 can be a bevel that slopes to the left or to the right. The inclination angle 0 of the upper surface 312 with respect to the lower surface 314 is about 5 to 30 degrees, but is not limited thereto. The light emitted from the upper surface 312 of the light-emitting layer 32A can be directed to the left or right side of the semiconductor light-emitting structure 3A to avoid the two electrodes 322, 324 located above and below the semiconductor light-emitting structure 3A. Referring to Figures 10A and 10B, there are shown cross-sectional views of a semiconductor light emitting structure in accordance with an embodiment of the present invention. The semiconductor light emitting structure of the present embodiment is similar to the semiconductor light emitting structure 3A shown in FIG. 9, and the same reference numerals are not shown, except that the upper surface 3丨2 has an inclined depressed portion 311 or an oblique convex portion. The portion 313 can be inclined to the left and right sides. The recessed portion 313 has a first inclined surface 312a and a second inclined surface 312b' connected to a boundary line L. The first inclined surface 3 and the second inclined surface 312b have an inclination angle θ 1 02 of about 5 to 3 degrees with respect to the lower surface 314, respectively, but are not limited thereto. The light emitted from the inclined upper surface 312 of the light-emitting layer 320 can be directed to the left and right sides of the semiconductor light-emitting structure 3A to avoid the two electrodes 322, 324 located above and below the semiconductor light-emitting structure 3A. Referring to Figures 11A and 11B, there is shown a cross-sectional view of a semiconductor light emitting structure in accordance with an embodiment of the present invention. The semiconductor light-emitting device and the door of this embodiment. The form of the structure is similar to that of the semiconductor light-emitting structure shown in Fig. 9, and the reference numerals are no longer indicated, and the difference is that the above table fi312 is a meandering surface, 11 201232820

I W7498PA has two recesses 315, 316 or two projections 317, gig, the number of which is not limited. Each of the recesses 315, 316 or projections 317, 318 has a first bevel 312a and a second bevel 312b that are coupled to respective boundary lines L. The first inclined surface 312a and the second inclined surface 312b have inclination angles of about 5 to 30 degrees with respect to the lower surface 314, respectively, but are not limited thereto. The light emitted from the curved upper surface 312 of the light-emitting layer 320 can be directed to the left and right sides of the semiconductor light-emitting structure 300 to avoid the two electrodes 322, 324 located above and below the semiconductor light-emitting structure 300. Referring to Figures 12A and 12B, there are shown cross-sectional views of a semiconductor light emitting structure in accordance with an embodiment of the present invention. The form of the semiconductor light emitting structure of the present embodiment is similar to that of the semiconductor light emitting structure 3A shown in FIG. 9, and the same reference numerals are not shown, the difference is that the upper surface is a curved surface 312c, and the tangent line τc on the curved surface 312c The slope is gradually increased or decreased from one side to the other to form a concave curved surface or a convex curved surface as shown in Figs. 12A and (10). The tangent τ passing through the concave curved surface or the convex curved surface has an inclination angle of about -30 degrees with respect to the lower surface 314. The light emitted from the curved surface 31& can be directed to the left and right sides of the semiconductor light emitting structure 3A to avoid the two electrodes 322, 324 located above the semiconductor light emitting structure 300. Referring to Figures 13 and 13A, there is shown a schematic cross-sectional view of a semiconductor light emitting structure in accordance with the present invention. The first inclined surface 312a and the second inclined surface 312b shown in FIGS. 1 and 1 respectively have different inclination angles, that is, 0 1 竽 0 2, but in the present embodiment, the inclined concave portion 311 or the inclined convex portion The output portion 313 is located at the center of the first semiconductor layer 31 (), and the first inclined surface 312a and the first inclined surface 312b have the same inclination angle, that is, the inclination of the first inclined surface 312a and the second inclined surface 312b relative to the lower surface 314 12 201232820

1 W7498PA angle is about 5~30 degrees, but not limited to this. According to a second type of embodiment, the upper surface 312 can be a curved surface, a beveled surface or a meandering surface. Since the interface between the first semiconductor layer 31 and the light-emitting layer 32 is not a horizontal surface, light can be prevented from being reflected by the electrodes, so that light scattering and outward emission are significantly increased, thereby increasing light extraction efficiency. The fourth type of embodiment is shown in Figs. 14A to 14C, which is a schematic cross-sectional view of a semiconductor light emitting structure according to an embodiment of the present invention. The semiconductor light emitting structure 4 includes a first semiconductor layer 41, a patterned structure 4, a light emitting layer 42A, a first semiconductor layer 430, and two electrodes 422, 424 on opposite sides. The first semiconductor layer 410 has an upper surface 412 and a lower surface 414. Upper surface 412 is not parallel to lower surface 414. Upper surface 412 can be a curved surface, a beveled surface, or a meandering surface. The patterned structure 4〇2 is convex or recessed on the upper surface 412' such that the upper surface 412 becomes a roughened surface. The light emitting layer 420 is disposed on the roughened upper surface 412. The second semiconductor layer 430 is disposed on the light emitting layer 420. The circular area depicted in Fig. 14A has been enlarged to the 2Uth and 21st. Referring to FIGS. 21A and 21B, the upper surface 412 is a tilting surface' and the patterned structure 402 has a plurality of tip portions 404, wherein the line C of the tip portions 404 is substantially perpendicular to the upper surface 412 (FIG. 21A) or Vertical lower surface 414 (Fig. 21B). In addition, in the embodiment of FIG. 14C, the upper surface is a curved surface 412c' and the patterned structure 402 has a plurality of tip portions 404'. The line C of the tip portions 404 is substantially opposite to the tangent T corresponding to the curved surface 412c. vertical. In the embodiment of Fig. 14B, the upper surface 412 has an oblique projection 13 201232820 I W74V8PA portion 411 (or an inclined depression portion as shown in Fig. 10A). The inclined projection 411 has a first inclined surface 412a and a second inclined surface 412b connected to a boundary line L. This embodiment is similar to the structure shown in Fig. 1 except for the patterned structure 402. The patterned structure 402 has a plurality of tips 404, and the lines C of the tips 404 are substantially perpendicular to the first bevel 412a or the second bevel 412b. Referring to Figures 15A-15C, a schematic cross-sectional view of a semiconductor light emitting structure in accordance with an embodiment of the present invention is shown. When the upper surface 412 has a sloped projection 411 (or an oblique depression, such as the first imaginary), the patterned structure 402 includes a plurality of microlenses 405' that are convex or concave on the upper surface 412. The geometry of the microlens 405 can be semi-circular, tapered, quadrangular or trapezoidal. In the embodiment of Fig. 7B, a Bragg reflection layer 4?6 is further formed on the upper surface 412' of the first semiconductor layer 410 to increase light extraction efficiency. Referring to FIGS. 16A-16F, a cross-sectional view of a semiconductor light emitting structure in accordance with an embodiment of the present invention is shown. The patterned structure 4〇2 includes a plurality of columnar portions 407a'. The top surfaces of the columnar portions 407a are separated from each other by a plurality of grooves 407b between the adjacent columnar portions 407a. All of the top surfaces of the weir portions 4〇7a are laid in a curved or conical shape, and the height of the __ valley columnar portions 407a varies in height, for example, gradually increasing or decreasing.扃--In the embodiment of Figures 16A-16C, 'all of the tops of the columnar portions 407a, the beauties constitute an inwardly curved profile or an inwardly inclined profile' and the height is low. Both 4n7 are located at the center of the patterned structure 402. In the first example of the first 16th to the ρβρ scent, all the top surfaces of the columnar portions 407a are structured by ▲, 靡 or - outwardly inclined, and the highest height of the branches: the outer and the outer At the center of the patterned structure 402. 4 407a’ position 201232820

TW7498PA According to a fourth type of embodiment, the upper surface 412 can be a curved surface, a beveled surface or a meandering surface. The patterned structure 402 may have a regular geometric pattern and/or an irregular geometric pattern, such as a microlens, a tip portion or a columnar portion 407a, etc., to avoid exiting light in the first semiconductor layer 41 that is larger than the total reflection angle. A problem of total reflection occurs at the interface between the light-emitting layer 420 and the first semiconductor layer 41, and most of the light is confined inside the first semiconductor layer 410. Since light can be emitted from the first semiconductor layer 31, the light extraction efficiency of the light-emitting diode is increased. Referring to Figures 17A to 17H, there are shown top views of a semiconductor light emitting structure in accordance with a first type of embodiment of the present invention. The upper surface 412 has a plurality of contour lines P1 to P3'. These contour lines P1 to P3 are respectively arranged in a rectangular form or in a line to indicate a difference in height between successively arranged contour lines. Depending on the distribution of the contour lines P1 to P3 and the positions of the respective electrodes 122, 124, the degree of inclination of the upper surface 112 and the surface rim can be edged to achieve optimum light extraction efficiency. In the embodiment of Figs. 17A, 17C and 17H, the electrode 124 is disposed in the highest or lowest contour line μ. In the embodiment of Figs. 17B 17F and 17G, the two electrodes 1 μ, 124 are arranged on the contour P3 of the same height. In the embodiment of Figures 17D and m, the electrodes 122, 124 are arranged on contours of different heights P P2. Fig. 18A to Fig. 18E, which is a plan view showing a semiconductor light emitting structure according to a third type of embodiment of the present invention. The upper surface 412 of the first semiconductor layer has a plurality of contour lines P1 to P2 which are arranged in (4) or in a line to indicate a difference in height between successively arranged contour lines. According to the distribution of the contour lines P1 to P2 and the electrodes 324 15 201232820

(While position of W / 498HA 'the degree of tilt of the upper surface 312 and the surface profile can be drawn to achieve optimum light extraction efficiency. In the embodiment of Figures 18A-18E, one electrode 324 is placed at the highest or lowest In the contour line p2, the number of the equal lines P1 to P2 can be designed according to requirements, and the present invention is not limited. For other types of embodiments, please refer to the figures 19A to 19H and 20A to 20H, which respectively show Schematic diagram of the patterned structure of the local month embodiment. The figure has a geometry, including a cone, a quadrangle, a hemisphere = a = or a group σ. In the embodiment of the 19A-19D, a The protrusions (10) are regularly arranged on the upper surface 512 in an island-like manner. In the embodiment of the 19th to igH diagram, the plurality of protrusions 510 are regularly arranged in a strip shape on the upper surface: another-the aspect '2nd图案A~ The schematic structure of the schematic diagram is opposite to the shape of the patterned structure of the first ~ the geometry of the recess 608 ^ In the embodiment of the second 〇A~2〇D diagram, a plurality of ^ 2: The tapered holes and the semi-circular holes are regularly arranged on the ten surface 612 in an island-like manner. In the embodiment of the second 〇E to the diagram, a plurality of pockets _ 歹 ' such as V-shaped grooves, semi-circular grooves, quadrangular grooves or trapezoidal grooves, etc. are regularly arranged in the strip shape on the upper surface 612. 4 special) in strips In addition to the regular arrangement, the pattern is more healthy ((4) (4) Che - 201232820

The TW7498PA is arranged on the upper surface in an island shape. Or, the first type of protrusions (such as a cone), the second type of protrusions (such as a hemisphere), and a plurality of pockets (such as a V-shaped groove, a semi-circular groove) are arranged in an island shape and a strip shape. surface. The above embodiments are not intended to limit the invention. In other embodiments, the arrangement of the patterned structures can be adjusted according to actual needs. In the above, the present invention has been disclosed in the above preferred embodiments, but it is not intended to limit the present invention. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1A and 1B are schematic cross-sectional views showing a semiconductor light emitting structure according to an embodiment of the present invention. 2A and 2B are schematic cross-sectional views showing a semiconductor light emitting structure according to an embodiment of the present invention. 3A and 3B are cross-sectional views showing a semiconductor light emitting structure in accordance with an embodiment of the present invention. 4A and 4B are schematic cross-sectional views showing a semiconductor light emitting structure in accordance with an embodiment of the present invention. 5A and 5B are schematic cross-sectional views showing a semiconductor light emitting structure according to an embodiment of the present invention. 6A to 6C are schematic cross-sectional views showing a semiconductor light emitting structure according to an embodiment of the present invention. 17 201232820

TW7498PA FIGS. 7A to 7C are schematic cross-sectional views showing a semiconductor light emitting structure according to an embodiment of the present invention. 8A to 8F are schematic cross-sectional views showing a semiconductor light emitting structure according to an embodiment of the present invention. Figure 9 is a cross-sectional view showing a semiconductor light emitting structure in accordance with an embodiment of the present invention. 10A and 10B are schematic cross-sectional views showing a semiconductor light emitting structure in accordance with an embodiment of the present invention. 11A and 11B are schematic cross-sectional views showing a semiconductor light emitting structure in accordance with an embodiment of the present invention. 12A and 12B are schematic cross-sectional views showing a semiconductor light emitting structure in accordance with an embodiment of the present invention. 13A and 13B are schematic cross-sectional views showing a semiconductor light emitting structure in accordance with an embodiment of the present invention. 14A to 14C are schematic cross-sectional views showing a semiconductor light-emitting structure according to an embodiment of the present invention. 15A-15C are cross-sectional views showing a semiconductor light emitting structure in accordance with an embodiment of the present invention. 16A to 16F are schematic cross-sectional views showing a semiconductor light emitting structure according to an embodiment of the present invention. Figs. 17A to 17H are green views showing a plan view of a semiconductor light emitting structure according to a first type of embodiment of the present invention. 18A to 18E are plan views showing a semiconductor light emitting structure according to a third type of embodiment of the present invention. Figures 19A to 19H and 20A to 20H are respectively shown in accordance with the present invention 201232820

I W /4y8PA Schematic representation of the patterned structure of an embodiment. 21A and 21B are schematic views respectively showing that the middle of the tip portion is substantially perpendicular to the upper surface or the lower surface of the first semiconductor layer. [Main component symbol description] 100, 200, 300, 400: semiconductor light emitting structure 110, 210: substrate 111, 211, 311: inclined depressed portions 112, 212, 312: upper surface 112a, 212a, 312a, 412a: first Bevels 112b, 212b, 312b, 412b: second slopes 112c, 212c, 312c, 412c: curved surfaces 113, 313, 411: inclined projections 114, 214, 314: lower surfaces 115, 116, 315, 316: depressions 117 , 118, 317, 318: protrusions 120, 220, 310, 410: first semiconductor layer 122, 124, 222, 224, 322, 324: electrodes 130, 230, 320, 420: light-emitting layer 140, 240, 330 430: second semiconductor layers 202, 402: patterned structures 204, 404: tip portions 205, 405: microlenses 206, 406: Bragg reflection layers 207a, 407a: columnar portions 19 201232820

Iw /^vorA 207b, 407b: groove 500: patterned structure 510: protrusion 512: upper surface 610: pocket 602: tapered hole 604: square hole 606: semi-circular hole 608: trapezoidal hole S: light 0, 0 1, Θ 2: Tilt angle L: Junction line T: Tangent line C: Center line P1 to P3: Contour line

Claims (1)

201232820 TW7498PA VII. Patent Application Range: 1. A semiconductor light emitting structure comprising: a substrate having an upper surface and a lower surface, the upper surface being non-parallel to the lower surface; a first semiconductor layer disposed on the An upper surface; an illuminating layer disposed on at least one portion of the first semiconductor; and a second semiconductor layer disposed on the luminescent layer. 2. The semiconductor light emitting structure of claim i, wherein the upper surface is a curved surface, a sloped surface or a meandering surface. 3. The semiconductor light emitting structure of claim 2, wherein the upper surface comprises at least a recessed portion, each recessed portion having a first inclined surface and a second inclined surface, the first inclined surface being connected to the second inclined surface On a borderline. The semiconductor light-emitting structure of claim 3, wherein the first slope and the second slope have an inclination angle of 5 to 30 degrees with respect to the lower surface, respectively. 5. The semiconductor light emitting structure of claim 1, wherein the recess is located at a center of the substrate, and the first slope and the second slope are equal to each other with respect to the lower surface. The semiconductor light emitting structure of claim i, wherein the upper surface includes at least one protrusion, each of the protrusions has a first slope and a second slope, the first slope and the first The two slopes are connected to a boundary line. 21 201232820 TW7498PA Μ: The semiconductor light-emitting structure described in item 6 of the second patent scope, "the intermediate material-slanted surface and the second inclined surface are inclined at an angle of ~30 degrees. The cloth surface knife has 5" The semiconductor light emitting structure according to Item 7, wherein the first inclined surface and the second oblique upper surface of the semiconductor light emitting structure according to the first oblique surface of the second inclined surface, the curved surface of the curved surface or the curved surface a convex curved surface, and a tangent line passing through the concave slope 具有 has a 0 to a degree of depression with respect to the lower surface, and a semiconductor light-emitting junction as described above in the above-mentioned item, and a depressed portion, each depressed portion There is a first inclined surface and a second inclined surface, each of which is on the boundary line. The bevel is connected to each of the second bevels, H is a semiconductor light-emitting knot as described in claim 1 and the m-six surface includes two protrusions. Each of the protrusions has a ----boundary line. Each of the first slopes is connected to each of the second slopes. The semiconductor light-emitting structure comprises: the soil material has an upper surface and a lower surface, the upper surface is not parallel to the lower surface, and the upper surface is a curved surface and a slope Or a curved surface; a patterned structure protruding or recessed on the upper surface to make the upper surface a roughened surface; a first semiconductor layer disposed on the roughened surface; 22 201232820 TW7498PA an illuminating layer, And disposed on at least a portion of the surface of the first semiconductor; and a second semiconductor layer disposed on the light emitting layer. The semiconductor light-emitting junction according to claim 12, wherein the upper surface is a sloped surface, the patterned structure has a plurality of tip neighbors, and the middle line of the tip portion is substantially perpendicular to the upper surface or The lower surface. The semiconductor light-emitting junction according to claim 12, wherein the upper surface is a curved surface, the patterned structure has a plurality of tip portions, and the middle lines of the tip portions substantially correspond to the tangent lines corresponding to the curved surface vertical. The semiconductor light-emitting junction according to claim 12, wherein the upper surface comprises at least one recessed portion, each recessed portion has a first inclined surface and a second inclined surface, the first inclined surface and the The second slope is connected to a boundary line. The semiconductor light-emitting device of claim A, wherein the upper surface comprises at least one protrusion, each of the protrusions has a first slope and a second slope, the first slope The second slope is connected to a boundary line. The semiconductor light-emitting structure of claim 12, wherein the patterned structure comprises a plurality of microlenses that are convex or concave on the upper surface. 18. The semiconductor light-emitting structure as described in claim 12, further comprising a Bragg reflection layer disposed on the upper surface. 19. The semiconductor light-emitting junction according to claim 12, wherein the patterned structure comprises a plurality of columnar portions, and the two faces of the columnar portions are separated from each other by a plurality of grooves, and the plurality of grooves are separated from each other by a plurality of grooves. The top surface of the columnar portion is laid in a curved or tapered shape, and the height of the columnar portions is gradually changed. As described in claim 12, the upper surface has a plurality of contour lines which are arranged in a rectangular form or in a line. 2^ For example, the (4) body light-emitting structure of the material _ 2 () material, including the two electrodes, are respectively arranged on the corners of different heights in the diagonal direction or on opposite sides (four). -^线22 If the (4) body light-emitting structure described in the second () of the application, the two electrodes are arranged at the corners of the same height in the diagonal direction or on both sides of the phase. The semiconductor light-emitting junction described in item 12 of the fourth aspect of the invention is characterized in that the patterned structure has a geometric shape including a cone, a quadrangle, a hemisphere, a trapezoid or a combination thereof. 24. The semiconductor light emitting structure of claim 12, wherein the patterned structure comprises a plurality of protrusions arranged regularly or randomly in an island and/or strip manner. 25. The semiconductor light-emitting structure of claim 12, wherein the (four) case structure comprises a plurality of recesses, the pits are regularly or randomly arranged in an island shape and/or a strip pattern. The light emitting structure comprises: a first semiconductor layer having an upper surface and a lower surface, the upper surface being non-parallel to the lower surface; 24 201232820 TW7498PA - an illuminating layer disposed on the upper surface of the first semiconductor; and - A semiconductor layer is disposed on the light emitting layer. Structure No.: Fork: The semiconductor light-emitting junction described in Item 26 of the Fanqu is a bevel or a meandering surface. The semiconductor light-emitting junction described in item 26 is 〆. Including at least one recessed portion, each recessed portion has a two-beveled surface at -==1, and the first inclined surface and the second inclined surface are connected to the semiconductor light-emitting structure described in claim 28 of the patent application scope. (4) The semiconductor light-emitting structure according to item 29, wherein the central recessed portion is located at a center of the first semiconductor layer, and the surface of the second inclined surface is equal to the lower surface of the second inclined surface, and the semiconductor light-emitting junction of the 26th item is formed. The upper surface of the middle surface includes at least one protruding portion, and each of the protruding portions has a two-= and a second inclined surface, and the first inclined surface and the second one are on a boundary line. According to the semiconductor light-emitting device of claim 31, the first inclined surface and the second inclined surface have an inclination angle of 5 to 30 degrees with respect to the lower surface, respectively. The semiconductor light-emitting junction according to claim 32, wherein the protruding portion is located at a center of the first semiconductor layer, and the inclined angle of the first surface and the second inclined surface with respect to the lower surface is equal. , 25 201232820 IW/4VXPA "Please refer to paragraph 26 of the patent scope to have a concave curved surface or a convex curved shape. The tangent to the convex curved surface is opposite to the lower surface. ~ Broadcast H as described in item 26 (4) (4) The UTi surface of the semiconductor light-emitting device includes two depressed portions, each of the depressed portions has a -th:----------------------- a second protruding portion, each of the protruding portions having a first inclined surface on the -first-on-boundary line and each of the second inclined surfaces 37. A semiconductor light emitting structure comprising: - 帛 - semiconductor layer 'having an upper surface and a lower surface The upper surface is not parallel to the lower surface, and the upper surface is a curved surface, a sloped surface or a meandering surface; a patterned structure protruding or recessed on the upper surface to make the upper surface a roughened surface; And disposed on the roughened surface; and a second semiconductor layer disposed on the light emitting layer. Structure, end face. The surface of the semiconductor light-emitting junction as described in claim 37 of the patent application is a beveled surface having a plurality of 'sigma tip portions, the middle line being substantially perpendicular to the upper surface or the lower table 26 201232820 IW The semiconductor light-emitting structure of claim 37, wherein the upper surface is a curved surface, the patterned structure has a plurality of tip portions, and the middle portions of the tip portions substantially correspond to the curved surface The tangent lines are perpendicular to each other. The semiconductor light emitting structure of claim 37, wherein the upper surface comprises at least one recessed portion, each recessed portion has a first inclined surface and a second inclined surface, and the first inclined surface is connected to the second inclined surface On a borderline. 41. The semiconductor light emitting structure of claim 37, wherein the upper surface comprises at least one protrusion, each protrusion has a first slope and a second slope, the first slope and the second The slope is on a boundary line. 42. The semiconductor light emitting structure of claim 37, wherein the patterned structure comprises a plurality of microlenses that are convex or recessed on the upper surface. 43. The semiconductor light emitting structure of claim 37, further comprising a Bragg reflection layer disposed on the upper surface. 44. The semiconductor light-emitting junction according to claim 37, comprising: a plurality of columnar portions, the top surfaces of the columnar portions being separated from each other by a plurality of grooves, the columns The top surface of the part is laid in a curved or tapered shape, and the height of the columns is gradually changed. = 5. The semiconductor light-emitting junction as described in claim 37, wherein the upper surface has a plurality of contour lines, which are respectively arranged in a rectangular form or in a line. 46. The semiconductor light-emitting junction 27 201232820 TW7498PA structure of claim 45, further comprising an electrode disposed in the center of the contour lines. Structure, further package 2: The semiconductor light-emitting junction 48 described in Patent Item 45: disposed at the center of the lower surface of the first semiconductor layer. The semiconductor light-emitting junction cone described in item 37 (4) (4) has a geometric shape including a cone (four), a hemisphere, a trapezoid or a combination thereof. 49. As described in claim 37 The semiconductor light-emitting structure 'wherein the patterned structure includes a plurality of protrusions, the protrusions are regularly or randomly arranged in an island and/or a strip manner. 50. The semiconductor light emission as described in claim 37 The structure wherein the S-hai patterned structure comprises a plurality of pockets arranged regularly or randomly in an island shape and/or a strip pattern.