TW201218426A - Vertical electrode structure LED and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a vertical electrode structure LED. The vertical electrode structure LED includes a base, a p-type semiconductor layer mounted on the base, an n-type semiconductor layer, and an active layer sandwiched between the p-type semiconductor layer and the n-type semiconductor layer. A thick of the n-type semiconductor layer is between 1.5 microns and 3.5 microns. The present invention further includes a manufacturing method of the vertical electrode structure LED.

Description

[Technical Field] The present invention relates to a light-emitting diode and a method of manufacturing the same, and, in particular, to a vertical electrode structure light-emitting diode of a special wavelength band and a method of manufacturing the same. [0002] 先前 [Prior Art] A vertical structure light-emitting diode generally includes a substrate, a p-type semiconductor layer on a substrate, a light-emitting layer, an n-type semiconductor layer, and an electrode formed on the semiconductor layer. Since an n-type semiconductor layer such as a gallium nitride layer is at least larger than 4 μm during growth, it can have a relatively good lattice quality. However, when the vertical structure of the light-emitting diode should be in a special band of light, especially near-violet light (wavelength is 365nm-420nm), the light emitted by the vertical structure of the light-emitting diode is easily absorbed by the n-type semiconductor layer, if η The thickness of the type semiconductor layer is too large, and there is a problem that light is excessively absorbed. SUMMARY OF THE INVENTION In view of the above, it is necessary to provide a vertical structure light-emitting diode having a preferred quality of gallium nitride layer and having better light-emitting efficiency and a method for fabricating the same. [0004] A vertical electrode structure light-emitting diode, a substrate, a Ρ-type semiconductor layer disposed on the substrate, an n-type semiconductor layer, and a light-emitting layer disposed between the p-type semiconductor layer and the n-type semiconductor layer, wherein the n-type semiconductor layer is a gallium nitride layer, the n-type 5微米之间。 The thickness of the semiconductor layer between 1. 5 microns to 3. 5 microns. A method for fabricating a vertical electrode structure light-emitting diode, comprising: providing a substrate on which an n-type semiconductor layer, a light-emitting layer, and a 099137113 form number Α0101, page 3/17 pages 0992064731-0 are sequentially grown on the substrate. 0005] 201218426 a P-type semiconductor layer of a substrate; providing a conductive substrate, a surface of the substrate is provided with a P-type electrode, and the substrate, the n-type semiconductor layer, the light-emitting layer and the p-type semiconductor layer are placed upside down on the substrate a surface of the n-type semiconductor layer is reduced to a thickness of 1.5 micron to 3.5 by a dry etching or a wet etching process. Between the micrometers; and an n-type electrode is formed on the n-type semiconductor layer. By setting the thickness of the n-type semiconductor layer, the vertical electrode structure light-emitting diode has a better light-emitting area and self-absorption efficiency. [Embodiment] Hereinafter, embodiments of the present invention will be further described in detail with reference to the accompanying drawings. Referring to FIG. 1 and FIG. 2, a vertical electrode structure LED assembly 100 according to an embodiment of the invention includes a substrate 10 and a gallium nitride based semiconductor light emitting structure 20 formed on the substrate 10. The gallium nitride based semiconductor light emitting structure 20 includes a light emitting layer 22 formed on the p-type semiconductor layer 21 by a germanium-type semiconductor layer 21 disposed on the substrate 10, and an n-type formed on the light emitting layer 22 away from the substrate 10. Semiconductor layer 23. The n-type semiconductor layer 23 is further provided with an n-type first electrode 30, and a back surface of the substrate 10 is plated with a p-type second electrode 80. [0009] The material of the substrate 10 is a conductive material, which may be tantalum carbide (SiC), bismuth (Si), gallium arsenide (GaAs), copper (Cu), copper-tungsten alloy (Cu/W), germanium (Ge). Or a conductive substrate such as nickel (Ni). In other embodiments, a reflective layer (not shown) is disposed between the substrate 10 and the P-type semiconductor layer 21, and the material of the reflective layer can be recorded (Ni), silver (Ag), Ming (A1), gold. (Au) Any two materials of recording, silver, Ming, and gold or alloys of two or more materials. The reflective layer may be connected to the substrate 10, respectively, p type 099137113 Form No. A0101 Page 4 / Total 17 Page 0992064731-0

201218426 Two layers of metal eutectic of semiconductor layer 21

[0011] The n-type semiconductor layer 23 is an n-type gallium nitride layer. When the vertical electrode structure light-emitting diode 100 of the present invention is operated, the thickness Η of the n-type semiconductor layer 23 is smaller, and the self-absorption of light by the beryllium-n-type semiconductor layer 23 is less, so that the vertical electrode structure emits light. The better the light characteristic of the polar body 100 is displayed; however, the smaller the thickness Η of the 11-type semiconductor layer 23, the smaller the current diffusion length Ls of the vertical electrode structure of the light-emitting diode 1 ,, so that the vertical electrode structure emits a polar body. The smaller the light-emitting area S of 100, the more the luminous efficiency of the vertical elevator structure light-emitting body 100 is affected. It is experimentally verified that when the thickness Η of the 11-semiconductor layer 23 is in the range of 1.5 μm to 3.5 μm, the photoelectric characteristics of the vertical electrode structure light-emitting diode-I 00 can be made better, and thus the luminous efficiency can be improved. optimization. Preferably, the n-type semiconductor layer 23 has a thickness Η ranging from 2 μm to 2.5 μm. 5的米米。 The thickness η of the n-type semiconductor layer 23 is 2. 5 law meters. Please refer to FIG. 3 together, which is a comprehensive luminous brilliance rate of the vertical electrode structure of the vertical electrode structure of the light-emitting diode 1 in the thickness of the n-type semiconductor layer 23 when the thickness of the n-type semiconductor layer 23 is changed to 4 micrometers. Change chart. Wherein the line 3 represents a proportional relationship between the light-emitting area S of the vertical electrode structure light-emitting diode 100 and the thickness Η when the thickness Η varies from 0 to 4 μm; the line 1) represents the vertical electrode structure light-emitting diode 1 when the thickness is changed to 4 μm. The ratio of the self-absorption efficiency Q of the crucible to the thickness Η; the line 0 indicates the total luminous efficiency C of the vertical electrode structure of the light-emitting diode 1〇〇 when the thickness η of the n-type semiconductor layer 23 varies from 〇 to 4 μm. The proportional relationship of thickness Η. As can be seen from the figure, when the thickness Η is between 1.5 μm and 3.5 μm, the integrated initial efficiency of the vertical electrode structure LED 100 has a higher value; when the thickness is 1 1 at 2 099137113 Form No. Α0101 Page 5 of 17 0992064731-0 201218426 When the value is between microns and 2. 5 microns, the overall luminous efficiency has an optimum value. [0012] The manufacturing method of the vertical electrode structure light-emitting diode 100 of the present invention includes the following steps: First, referring to FIG. 4, the n-type semiconductor layer 23a and the n-type semiconductor layer 23a are sequentially grown on the substrate 50. The light emitting layer 22 and the p-type semiconductor layer 21 away from the substrate 50. The material of the substrate 50 is sapphire, and the n-type semiconductor layer 23a is an n-type gallium nitride layer. In order to grow with better lattice quality, the thickness of the n-type semiconductor layer 23 is greater than or equal to 4 micrometers. [0014] Next, referring to FIG. 5, a substrate 10 and a p-type second electrode 80 on the back thereof are provided. The material of the substrate 10 is a conductive material, which may be carbonized chopped (SiC), bismuth (Si), gallium arsenide (GaAs), copper (Cu), copper-tungsten alloy (Cu/W), germanium (Ge), or A conductive substrate such as nickel (Ni); the substrate 50, the n-type semiconductor layer 23, the light-emitting layer 22, and the p-type semiconductor layer 21 are placed upside down on the substrate 10, and the germanium-type semiconductor layer 21 is fixed on the substrate 10. In other embodiments, a metal layer may be respectively bonded on the substrate 10, the p-type semiconductor layer 21, and then the two layers of metal may be bonded together by eutectic, thereby fixing the germanium-type semiconductor layer 21 to the substrate 10 and simultaneously forming a Reflective layer. The material of the reflective layer may be any one of two materials or two or more materials of Ni (Ni), Silver (Ag), Ming (Α1), Gold (Au) or nickel, silver, Ming, and gold. [0015] Next, referring to FIG. 6, the substrate 50 is separated from the n-type semiconductor layer 23a by laser lift-off, chemical peeling or mechanical polishing or other methods, this 099137113 Form No. A0101 Page 6 / Total 17 Page 0992064731-0 The thickness of the n-type semiconductor layer 23a is greater than 4 μm at 201218426. [0016] Then, as indicated by @7, the thickness Η of the Tosaki wire-type or type semiconductor layer Η is reduced to U micron to 3. For example, no. In this real _ towel, 咐 conductor layer _ thick micron. b [0017] Finally, please refer again to FIG. 1, an electrode 30. Making an n-type on the n-type semiconductor layer 23

[0018] In summary, the invention is in accordance with the requirements of the patent, and the patent application is filed according to law. However, the above description is only the preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art of the present invention should be included in the following claims. BRIEF DESCRIPTION OF THE DRAWINGS [0019] FIG. 1 is a schematic cross-sectional view showing a vertical electrode structure light-emitting diode according to an embodiment of the present invention. 2 is a top plan view of the vertical electrode structure light emitting diode of FIG. 1. 3 is a graph showing the relationship between the overall luminous efficiency of the vertical electrode structure light-emitting diode and the thickness of the n-type semiconductor layer of the present invention. 4 to FIG. 7 are manufacturing processes of a vertical electrode structure light-emitting diode according to the present invention. [Main component symbol description] [0023] Vertical electrode structure light-emitting diode: 1〇〇[〇〇24] substrate: 10 099137113 Form No. 1010101 Page 7 of 17 0992064731-0 201218426 [0025] Gallium nitride-based semiconductor light-emitting structure: 20 [0026] p-type semiconductor layer: 21 [0027] Light-emitting layer: 22 [0028] n-type semiconductor layer: 23, 2 3a [0029] First electrode: 3 0 [0030] Thickness: Η [0031] Current diffusion length: Ls

[0032] Self-absorption efficiency: Q

[0033] Light-emitting area: S

[0034] Substrate: 50 [0035] Second electrode: 80

[0036] Comprehensive luminous efficiency: C 099137113 Form No. A0101 Page 8 of 17 0992064731-0

Claims (1)

201218426 VII. Patent application scope: 1. A vertical electrode structure light emitting diode comprising a substrate, a P-type semiconductor layer disposed on the substrate, an n-type semiconductor layer, and disposed between the p-type semiconductor layer and the n-type semiconductor layer 5微米之间。 3. The micron layer is between 1. 5 microns to 3. 5 microns. 2. The vertical electrode structure light-emitting diode according to claim 1, wherein the n-type semiconductor layer has a thickness ranging from 2 micrometers to 2.5 micrometers. 3. The vertical electrode structure light-emitting diode according to claim 1, wherein the thickness of the n-type semiconductor layer is equal to 2.5 μm. 4. The vertical electrode structure light-emitting diode according to claim 1, further comprising an n-type first electrode connected to the n-type semiconductor layer and a p-type second electrode connected to the substrate. 5. The vertical electrode structure light-emitting diode according to claim 1, wherein a reflective layer is disposed between the substrate and the germanium-type semiconductor layer, and the material of the reflective layer may be nickel (Ni) or silver (Ag). ), aluminum (ΑΊ), gold (Au ^ ) or any of two materials of nickel, silver, inscription, gold, or an alloy of two or more materials. 6. A method of fabricating a vertical electrode structure light-emitting diode, comprising: providing a substrate on which an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer of a substrate are sequentially grown; providing a conductive a substrate, a surface of the substrate is provided with a p-type electrode, and the substrate, the n-type semiconductor layer, the light-emitting layer and the p-type semiconductor layer are placed upside down on the other surface of the substrate, and the p-type semiconductor layer is fixedly connected to the substrate 5微米至3。 The thickness of the n-type semiconductor layer is reduced to 1. 5 microns to 3 by the dry etching or wet etching process by a dry etching or a wet etching process, the thickness of the n-type semiconductor layer is reduced to 1. 5 microns to 3 Between 5 microns; and an n-type electrode is formed on the n-type semiconductor layer. The method of manufacturing the vertical electrode structure light-emitting diode according to claim 6, wherein the thickness of the n-type semiconductor layer is reduced to between 2 μm and 2.5 μm. 5微米。 The thickness of the n-type semiconductor layer is reduced to 2. 5 microns. 9. The method of manufacturing a vertical electrode structure light-emitting diode according to claim 6, wherein in the second step, the substrate and the germanium-type semiconductor layer are respectively plated with a layer of metal, and then two by eutectic. The layer metals are bonded together to fix the germanium-type semiconductor layer on the substrate and a reflective layer between the substrate and the germanium-type semiconductor layer. 10. The method of manufacturing a vertical electrode structure light-emitting diode according to claim 6, wherein the substrate and the n-type semiconductor layer are separated by laser lift-off, chemical peeling or mechanical polishing. 099137113 Form number Α0101 Page 10 of 17 0992064731-0