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TW201216300A - Composite silver thread - Google Patents

Composite silver thread Download PDF

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Publication number
TW201216300A
TW201216300A TW100124441A TW100124441A TW201216300A TW 201216300 A TW201216300 A TW 201216300A TW 100124441 A TW100124441 A TW 100124441A TW 100124441 A TW100124441 A TW 100124441A TW 201216300 A TW201216300 A TW 201216300A
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TW
Taiwan
Prior art keywords
weight
gold
wire
passed
composite silver
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Application number
TW100124441A
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Chinese (zh)
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TWI365458B (en
Inventor
Fei-Yi Hong
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Profound Material Technology Co Ltd
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Application filed by Profound Material Technology Co Ltd filed Critical Profound Material Technology Co Ltd
Priority to TW100124441A priority Critical patent/TW201216300A/en
Priority to KR20110092791A priority patent/KR101415851B1/en
Priority to JP2011204535A priority patent/JP5417647B2/en
Priority to CN201110431598.6A priority patent/CN102592700B/en
Publication of TW201216300A publication Critical patent/TW201216300A/en
Application granted granted Critical
Publication of TWI365458B publication Critical patent/TWI365458B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)
  • Powder Metallurgy (AREA)

Abstract

A composite silver thread, comprises gold, palladium, and silver, wherein, gold's content is not less than 4 % by weight and less than 8 % by weight, and palladium's content is between 2 % by weight and 4 % by weight. Thereby, the whole invention can provide benefits of good workability, high temperature and humidity durability, and low production cost.

Description

201216300 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種複合銀線，特別是指一種作為半 導體封裝製程之連接線的複合銀線。 【先前技術】 在半導體元件的封裝製程中，打線接合使用的導線， 分為金線、銅線與鋁線，由於金線具有優異的物理性質， 如穩定性高、質軟'延展性佳、導電性佳，其良率、生產 效率及線徑微細化等表現也都相當不錯，所以目前仍以使 用金線為主要打線接合技術。 然而，由於金線的成本非常高，為了節省材料成本考 量’半導體業者已經廣泛地以㈣銅線來取代金線，不但 可=節省約七成的材料成本，而⑽_線於被使用時的 可靠度（如耐高溫高濕能力）也能符合要求，不過，卻因 鍵纪銅線的硬度偏高，產生了作業性（產能）I、良率偏 低的問題’所以對半導體業者來說，鍍纪銅線於打線接人 封裝技術上的使用，實際上所能達到節省成本效益是不如 預期的。 有鑑於此，本發明通# 1 ^ ^ 月通過以金、銀與鈀依據特定成分比 例製得複合銀線，其作業性幾乎 戍于寺同於金線，且能通過高 溫高濕可靠度測試，確實達到節省成本的目的。 【發明内容】 因此，本發明之目的，即在 _ . 卩在&供一種含有金、銀、鈀 等成分，作業性佳、能通過高、、β古 巧/皿问濕可罪度測試，且節省 201216300 成本的複合銀線。 、鈀，及銀，其 重量％，而鈀的含 於是’本發明之複合銀線，包含金 中，金的含量是不小於4重量％且小於8 量是介於2重量％〜4重量％之間。 本發明之功效在於，透過金、銳與銀等成分的重量比 例調整’使其作業性不但能與金線相#，且能通過高溫高 濕可靠度測試，並大幅節省製程成本。 【實施方式】 以及其餘的 本發明之複合銀線，是包含金、鈀、麵 銀等成分。 其中，金的含量是不小於4重量％且小於8重量％，若 金含量低於4重量％，會造成本發明之合金硬度過高，容易 導致作業性不佳’若金含量超過8%，本發明之複合銀線的 作業丨生與了罪度不但未能明顯提高，還會大幅增加成本。 鈀的含量是介於2重量％〜4重量％之間，若鈀含量低 於2重量％，本發明之複合銀線無法通過高溫高濕可靠度測 試，若鈀含量高於4% ,本發明之複合銀線的合金硬度會太 高，導致作業性與良率不佳。 始的含量是介於〇重量％〜2重量％之間，若鉑含量高 於2重量％ ’本發明之複合銀線的熔點會變高，固熔率不 穩，且成本提高。 在製作本發明之複合銀線時，將金、鈀、鉑與銀等金 屬材料投置入一熔爐中，以混煉製得一熔融狀的合金液 體；接著，使該合金液體經由鎮錠製造（ingot making)、辕 201216300 乳（press roll )主抽線（heavy加评㈣）、細抽線（打时 drawing )、表面清洗、烘乾、定型退火（麵Μ—)、 繞線（rewinding)等加工處理，便能製成一複合銀線成 时’再予使用在帛導體元件的打線接纟封裝製程中。 本發明將就以下實施例來作進一步說明，但應瞭解的 是，所示實施例僅為例示說明之用，而不應被解釋為本發 明實施之限制。 [複合銀線的實施例1至U與比較例1至u】201216300 VI. Description of the Invention: [Technical Field] The present invention relates to a composite silver wire, and more particularly to a composite silver wire which is a connecting wire of a semiconductor packaging process. [Prior Art] In the packaging process of a semiconductor device, the wires used for wire bonding are divided into gold wires, copper wires, and aluminum wires, and the gold wires have excellent physical properties such as high stability and softness, and good ductility. The conductivity is good, and the performance of yield, production efficiency and wire diameter are also quite good, so the gold wire is still the main wire bonding technology. However, because the cost of gold wire is very high, in order to save material cost considerations, the semiconductor industry has widely replaced the gold wire with (4) copper wire, which not only saves about 70% of the material cost, but also (10)_line when it is used. Reliability (such as high temperature and high humidity resistance) can also meet the requirements. However, due to the high hardness of the key copper wire, the problem of workability (capacity) I and low yield is generated, so for the semiconductor industry. The use of the copper-plated copper wire in the wire-to-wire packaging technology is actually less cost-effective than expected. In view of this, the present invention passes through a ratio of gold, silver and palladium according to a specific composition ratio to obtain a composite silver wire, and the workability is almost the same as that of the gold wire, and can pass the high temperature and high humidity reliability test. It does achieve the goal of cost savings. SUMMARY OF THE INVENTION Therefore, the object of the present invention is to provide a component containing gold, silver, palladium and the like, which is excellent in workability, high in passability, and high in quenching. And save the composite silver wire at a cost of 201216300. , palladium, and silver, the weight % thereof, and the palladium is contained in the composite silver wire of the present invention, comprising gold, the content of gold is not less than 4% by weight, and the amount of less than 8 is between 2% by weight and 4% by weight. between. The effect of the present invention is to adjust the weight ratio of components such as gold, sharp and silver to make it work not only with the gold wire phase, but also to pass the high temperature and high humidity reliability test, and to greatly save the process cost. [Embodiment] The remaining composite silver wire of the present invention contains components such as gold, palladium, and silver. Wherein, the content of gold is not less than 4% by weight and less than 8% by weight, and if the gold content is less than 4% by weight, the hardness of the alloy of the present invention is too high, and the workability is liable to be unsatisfactory. The operation of the composite silver wire of the present invention has not only failed to significantly improve the crime, but also greatly increased the cost. The content of palladium is between 2% and 4% by weight. If the palladium content is less than 2% by weight, the composite silver wire of the present invention cannot be tested by high temperature and high humidity reliability. If the palladium content is higher than 4%, the present invention The alloy hardness of the composite silver wire is too high, resulting in poor workability and yield. The initial content is between 〇% by weight and 2% by weight, and if the platinum content is more than 2% by weight, the melting point of the composite silver wire of the present invention becomes high, the solid solution rate is unstable, and the cost is increased. In the production of the composite silver wire of the present invention, a metal material such as gold, palladium, platinum or silver is placed in a furnace to knead to obtain a molten alloy liquid; and then, the alloy liquid is produced through an ingot. (ingot making), 辕201216300 milk (press roll) main drawing line (heavy plus evaluation (four)), fine drawing line (drawing), surface cleaning, drying, shaping annealing (face Μ -), winding (rewinding) After processing, it can be made into a composite silver wire when it is used in the wire bonding process of the germanium conductor element. The invention is further illustrated by the following examples, but it is understood that the illustrated embodiments are only illustrative and not to be construed as limiting. [Examples 1 to U of composite silver wire and Comparative Examples 1 to u]

依照表1所示的合金成分與重量比例，將金U 與銀等金屬材料投置人《中，以混煉製得融狀的合 金液體，再使該合金液體經㈣鍵製造、_、主抽線、 細抽線、表面清洗、烘乾、定型退火、繞線等加工處理， 以製得-複合銀線成品，並用以使用在半導體元件的打線 接合封裝製程中。 八然後，以後述的評價方式，來對打線接合使用後之複 2線成品，進行作業性測試與可靠度_，所得測試結 果如表1所示。 201216300 表1 複合ί 限線成分（重量％) UPH ^ <a «l / UPH “ 可靠度測試 Ag Au Pd Pt PCT (250小時） HAST (200小時） THB (1000小時） 實施例1 92.0 4.0 4.0 88.0% minor passed passed 實施例2 92.5 4.0 3.5 90.0% minor passed passed 實施例3 93.0 4.0 3.0 91.0% minor passed passed 實施例4 91.0 5.0 4.0 92.0% none passed passed 實施例5 91.5 5.0 3.5 94.0% minor passed passed 實施例6 92.0 5.0 3.0 94.5% minor passed passed 實施例7 88.2 7.8 4.0 95.0% none passed passed 實施例8 88.7 7.8 3.5 97.6% none passed passed 實施例9 89.2 7.8 3.0 97.7% minor passed passed 實施例10 86.7 7.8 3.5 2.0 97.5% none passed passed 實施例11 88.2 7.8 3.5 0.5 98.0% none passed passed 實施例12 90.2 7.8 2.0 95.0% minor passed passed 比較例1 85.0 10 5.0 90.0% none passed passed 比較例2 86.0 10 4.0 94.0% none passed passed 比較例3 86.5 10 3.5 96.0% none passed passed 比較例4 87.0 10 3.0 97.0% minor passed passed 比較例5 87.2 7.8 5.0 88.0% none passed passed 比較例6 90.0 5.0 5.0 85.0% none passed passed 比較例7 91.0 4.0 5.0 82.0% minor passed passed 比較例8 92.0 3.0 5.0 80.0% minor failed failed 比較例9 93.0 3.0 4.0 83.0% minor failed failed 比較例10 93.5 3.0 3.5 85.5% failed failed failed 比較例11 94.0 3.0 3.0 88.0% failed failed failed 比較例12 91.2 7.8 1.0 95.0% failed failed failed 【評價方式] 一、作業性（Unit Per Hour，簡稱 UPH) 經測試，金線之每小時所能生產單位（以UPH金線 表示）為375pcs/hr，再將所製得複合銀線之UPH (以 UPH複合銀線表不）與UPH金味作比較。 —、可靠度（（Reliability ) (一）壓力鋼試驗（Press Cooker Test，簡稱 PCT) 根據JESD22-A102，將複合銀線產品放置在溫度 6 201216300 121 °C、濕度100%RH '壓力29.7psi的環境下，經 250hrs的測試後，採用聚焦離子束（Focused Ion Beam，簡稱FIB)觀察複合銀線與基板之間的介金屬氧 化物（IMC )狀況，以評估複合銀線產品的耐高濕能 力，並根據下列標準進行評價： none :沒有孔洞（沒有失效） minor :少量孔洞（沒有失效） failed :明顯大量的孔洞（失效） (二） 高加速溫度濕度未飽和蒸氣應力測試（High Accelerated Temperature and Humidity Stress Test，簡稱 HAST ) 根據JESD22-A110，將複合銀線產品放置在溫度 130°C、濕度85%RH、施加6伏特電壓的環境下，經 200hrs的測試後，同樣採用FIB觀察IMC狀況，以評 估複合銀線產品的耐高濕能力，並根據下列標準進行評 價： passed:沒有〜少量的孔洞，通過 failed :明顯大量的孔洞，失效 (三） 恒·溫怪濕偏壓測試（Thermal Humidity Bias Life Test ’ 簡稱THB ) 根據JESD22-A101，將複合銀線產品放置在溫度85 °C、濕度85%RH，與施加6伏特額定電壓的環境下，經 lOOOhrs的測試後，同樣採用FIB觀察IMC狀況，以評 估複合銀線產品的抗蝕能力，並根據下列標準進行評 201216300 passed :沒有〜少量的孔洞，通過 failed :明顯大量的孔洞，失效 [結果分析】 的剛1果可知’如實施例1至12,在金 的含量不小於4重量％且小於8重量％、㈣含量介於2重 量%〜4重量％之間、㈣含量介於〇重量％〜2重量%之 間，且其餘為銀的合金成分比例下，本發明之複合銀線的 作業性表現極佳，相當接近金線的作業性，而^，能通過 PCT、HAST與THB等高溫高濕可靠度測試，其結果亦相當 於金線的可靠度，尤其於製程成本上得以大幅降低。 而且，上述實施例所製得的複合銀線，在另外進行結 合性能測試，包含線拉力測試（⑽pu丨1加，簡稱耐） 與球推力測試（Ball Shear Test，簡稱bst)後所得結果 亦明顯高於金線者。 相對地，在金的含量不小於8重量％時，如比較例丄至 4 ’本發明之複合銀線的作隸與可#度並未能明顯提高， 尤其於成本上依,然偏高’無法符合半導體封裝業者需求。 另外，如比較例51 12，在金的含量低於4重量％， 或是絶的含量高於4重4%時，本發明之複合銀線的合金硬 ^過高，造成作業性與良率表現不彳圭，而且，若纪的含 里低於2重量％的話，本發明之複合銀線的耐高溫高濕能力 不足’無法達到可靠度要求。 综上所述’本發明之複合銀線，透過金的含量是不小 ;重量/〇且小於8重量❶/〇、鈀的含量是介於2重量4 8 201216300 重量％之間、鉑的含量是介於0重量％〜2重量％之間，以 及其餘為銀的特定合金成分比例配製，其作業性不但能與 金線相當’且能通過高溫高濕可靠度測試，並大幅節省製 程成本。 惟以上所述者’僅為本發明之較佳實施例而已，當不According to the alloy composition and weight ratio shown in Table 1, a metal material such as gold U and silver is placed in the middle, and a molten alloy liquid is obtained by kneading, and then the alloy liquid is produced by the (four) bond, _, the main The processing of drawing, fine drawing, surface cleaning, drying, shaping annealing, winding, etc., to obtain a finished composite silver wire, and used in the wire bonding packaging process of the semiconductor component. 8. Then, in the evaluation method described later, the workability test and the reliability _ are performed on the double-wire finished product after the wire bonding is used, and the obtained test results are shown in Table 1. 201216300 Table 1 Compound ί Limit line component (% by weight) UPH ^ <a «l / UPH " Reliability test Ag Au Pd Pt PCT (250 hours) HAST (200 hours) THB (1000 hours) Example 1 92.0 4.0 4.0 88.0% minor passed passed Example 2 92.5 4.0 3.5 90.0% minor passed passed Example 3 93.0 4.0 3.0 91.0% minor passed passed Example 4 91.0 5.0 4.0 92.0% none passed passed Example 5 91.5 5.0 3.5 94.0% minor passed passed Example 6 92.0 5.0 3.0 94.5% minor passed passed Example 7 88.2 7.8 4.0 95.0% none passed passed Example 8 88.7 7.8 3.5 97.6% none passed passed Example 9 89.2 7.8 3.0 97.7% minor passed passed Example 10 86.7 7.8 3.5 2.0 97.5% only passed passed Example 11 88.2 7.8 3.5 0.5 98.0% none passed passed Example 12 90.2 7.8 2.0 95.0% minor passed passed Comparative Example 1 85.0 10 5.0 90.0% none passed passed Comparative Example 2 86.0 10 4.0 94.0% none passed passed Comparative Example 3 86.5 10 3.5 96.0% none passed passed Comparative Example 4 87.0 10 3.0 97.0% minor passed passed Comparative Example 5 87.2 7.8 5.0 88.0% none passed passed Comparative Example 6 90.0 5.0 5.0 85.0% none passed passed Comparative Example 7 91.0 4.0 5.0 82.0% minor passed passed Comparative Example 8 92.0 3.0 5.0 80.0% minor failed failed Comparative Example 9 93.0 3.0 4.0 83.0% Minor failed failed Comparative Example 10 93.5 3.0 3.5 85.5% failed failed failed Comparative Example 11 94.0 3.0 3.0 88.0% failed failed failed Comparative Example 12 91.2 7.8 1.0 95.0% failed failed failed [Evaluation method] 1. Unit Per Hour UPH) After testing, the production line of gold wire per hour (expressed by UPH gold wire) is 375pcs/hr, and then the UPH of the composite silver wire (not shown by UPH composite silver wire) and UPH gold taste Comparison. —Reliability (1) Press Cooker Test (PCT) According to JESD22-A102, the composite silver wire product is placed at a temperature of 6 201216300 121 ° C, humidity 100% RH 'pressure 29.7 psi Under the environment, after the test of 250 hrs, the state of the intermetallic oxide (IMC) between the composite silver wire and the substrate was observed by Focused Ion Beam (FIB) to evaluate the high humidity resistance of the composite silver wire product. And evaluated according to the following criteria: none : no holes (no failure) minor : a small number of holes (no failure) failed : a significant number of holes (failure) (b) high acceleration temperature and humidity unsaturated vapor stress test (High Accelerated Temperature and Humidity Stress Test (HAST) According to JESD22-A110, the composite silver wire product is placed in a temperature of 130 ° C, humidity of 85% RH, and a voltage of 6 volts is applied. After 200 hrs of testing, the FIB is also observed by FIB. To evaluate the high-humidity resistance of composite silver wire products, and to evaluate according to the following criteria: passed: no ~ a small amount of holes, through faile d : Significantly large number of holes, failure (3) Thermal Humidity Bias Life Test ' THB for short) According to JESD22-A101, the composite silver wire product is placed at a temperature of 85 ° C and a humidity of 85% RH. With the application of a voltage rating of 6 volts, after 1000 hours of testing, the IMC condition was also observed using FIB to evaluate the corrosion resistance of the composite silver wire product, and evaluated according to the following criteria: 201216300 passed: no ~ small amount of holes, By failed: a significant number of holes, failure [result analysis] just 1 fruit, as shown in Examples 1 to 12, the gold content is not less than 4% by weight and less than 8% by weight, (4) content is between 2% by weight and ~4 The composite silver wire of the present invention exhibits excellent workability between the weight % and the (iv) content of between 〇% by weight and 2% by weight, and the balance of the alloy composition of the remaining silver, which is quite close to the workability of the gold wire. And ^, can pass the high temperature and high humidity reliability test such as PCT, HAST and THB, and the result is equivalent to the reliability of the gold wire, especially the process cost is greatly reduced. Moreover, the compound made by the above embodiment Line, for the further binding performance testing, comprising a wire pull test (⑽pu Shu plus 1, referred to resistant) obtained with the ball thrust test results (Ball Shear Test, abbreviated BST) was significantly higher than those of gold. In contrast, when the content of gold is not less than 8% by weight, as in the comparative example 丄 to 4', the composite silver wire of the present invention is not significantly improved, especially in terms of cost, but high. Can not meet the needs of semiconductor packaging industry. In addition, as in Comparative Example 51 12, when the content of gold is less than 4% by weight, or the content of the absolute content is higher than 4% by 4%, the alloy of the composite silver wire of the present invention is too high, resulting in workability and yield. The performance is not satisfactory, and if the content of the core is less than 2% by weight, the high-temperature and high-humidity ability of the composite silver wire of the present invention is insufficient to meet the reliability requirement. In summary, the composite silver wire of the present invention has a gold content of not less than; the weight/〇 is less than 8 weights ❶/〇, and the palladium content is between 2 weights 4 8 201216300% by weight, and the platinum content. It is between 0% by weight and 2% by weight, and the balance of the specific alloy composition of the rest is silver. Its workability is not only comparable to that of gold wire, but also can be tested by high temperature and high humidity reliability, and the process cost is greatly saved. However, the above description is only a preferred embodiment of the present invention, when not

屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 即大凡依本發明申請專利 的等效變化與修飾，皆仍 201216300 【主要元件符號說明】 (無） 10It is within the scope of the patent of the present invention. [Simple description of the schema] That is, the equivalent changes and modifications of the patent application of the invention are still 201216300 [Description of main component symbols] (none) 10

Claims (1)

201216300 七、申請專利範圍： 1. 一種複合銀線，包含金、把，及銀，其中，金的含量是 不小於4重量％且小於8重量％，而把的含量是介於2重 量％〜4重量％之間。 2. 根據申請專利範圍第1項所述之複合銀線，還包含鉑， 鉑的含量是介於0重量％〜2重量％之間。 11 201216300 四、指定代表圖：（無） (一) 本案指定代表圖為：圖（）。 (二) 本代表圖之元件符號簡單說明： 五、本案若有化學式時，請揭示最能顯示發明特徵的化學式： (無）201216300 VII. Patent application scope: 1. A composite silver wire comprising gold, silver, and silver, wherein the content of gold is not less than 4% by weight and less than 8% by weight, and the content is between 2% by weight and 〜 Between 4% by weight. 2. The composite silver wire according to claim 1, further comprising platinum, the content of platinum being between 0% by weight and 2% by weight. 11 201216300 IV. Designated representative map: (none) (1) The representative representative of the case is: map (). (2) A brief description of the symbol of the representative figure: 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: (none)
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