TW201213775A - Flowrate sensor and flowrate detection device - Google Patents
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Description
201213775 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種將微機電系統(MENS)感測器晶片收 納於表面構裝型之封裝體,能檢測氣體或液體流量之流量 感測器、及使用該流量感測器之流量檢測裝置。 【先前技術】 利用半導體製程技術,將機械加工技術或材料技術等 組合於其中,藉此實現在基板上具有三維之微細構造之系 ^ ^ ^ t ^ (MENS : Mlcro Eelectro Mechanical System) 技術’近年來被廣泛用來小型化及輕量化感測器或泵等元 件。作為使用該微機電系統技術之感測器( 器),例如加速度感測器、角速度感測器、壓力感測= 被廣泛#用。 处千求,作為家庭 月待燃料電池系統之普及商業化。此種燃料電池,必 高精度檢測燃料氣體或液體燃料之流量、或供應 ::量、將改質器所形成之氣氣等供應給燃料電 以控制其流量。又’從燃料中取出所需之氣氣G 、二質時,雖會產生—氧化碳(c〇),但該一氧化碳對 煤之性能會造成不良影響,因此為減低 度,亦同時要屯、H挥备 ' 氧化石反 J丨』日手要求選擇虱化用空氣之流量控制。又 刀析放置或醫療相關(下藥、臨床測試等卜 ^ 之領域中,介/5 '車之輪送機: ^中亦必須檢測氣體或液體之微少量之、ώ曰 以來’雖提案有各種流量計,但其大多係二… 7诉僅叶量氣體流. 201213775 者’適合測量液體流量者極少。 例如,雖有將液體通過孔口(〇rifice),用流體壓力計 (manometer)或2個壓力感測器等檢測孔口之前後壓力差者 (孔口流量計)、在流體之流動内設置葉輪,根據該葉輪之旋 轉次數以檢測流量者(渦輪式流量計),但此等流量計皆有大 型化之缺點。又,一般所知有:用設於對向之管壁之超音 波感測器,檢測從流路之管壁對流體傾斜射出之超音波, 根據此時之都卜勒(D〇pPler)效應之檢測強度之變化進行檢 測者(超音波流量計)、檢測通過磁場中之流體所產生之磁場 正交方向之電壓變化者(電磁流量計)、用加熱器加熱流體 時,檢測其則後之流體溫度之變化者(熱式質量流量計)等。 在專利文獻1、專利文獻2中,雖已揭示有,以具有微 機電系統(MEMS)晶片之半導體感測器構成加速度感測 器、角速度感測器、壓力感測器,但在此等中未說明流量 感測器。在專利文獻3中已揭示有,使微尺寸之玻璃管接 觸於形成於矽(Si)基板之微機電系統(MEMS)晶片,使液體 於玻璃管流動之熱式質量流量計(熱式流動感測器)。 在專利文獻4中已揭示有壓差式之流量感測器之概 念。亦即,係使用半導體微細加工技術,用蝕刻技術將薄 膜(亦稱隔膜)形成於矽(Si)基板,流體通過形成於該薄膜之 隔膜孔(至少1個開口)’藉此在薄膜兩側產生與流量成比例 之壓差’依據該壓差,藉由形成於薄膜之擴散電阻(壓電電 阻元件)以電氣檢測薄膜所產生之應力(變形)者。由於矽單 晶在室溫下不塑性變形’因此特性不變,又,由於薄膜係 s 4 201213775 與基板一體,因此係能獲得穩定之特性者。 專 利 文獻1 : 曰 本特 開 專 利 文 獻2 : 曰 本特 開 專 利 文 獻3 : 美 國專 利 專 利 文 獻4 : 美 國專 利 C 發 明 内容】 20 10 ~ 28025 號公報 2010— 19693 號公報 US6813944Β2 US6253605B1 專利文獻1、2所揭示者,係使用微機電系統(mems) 技術,用讀測加速度、角速度、壓力者,並非檢測氣體 或液體之流量者,並非啟發流量計者。專利讀3所揭示 者由於用加#器加熱在微管内流動之液冑,為使響應性 必須將該微管之厚度作成非常薄,因此有強度上:問 題。又,當計量低沸點之液體時,有在加熱器之附近易生 氣泡’不能正確檢測之問題。 專利文獻4中,係僅揭示根據薄膜之變形檢測流量之 原理,針對如何將此原理使用於實際之❹以未加以揭 不。亦即雖對家庭用燃料電池系統或攜帶機器用之烬料電 =、醫療機器等要求流量感測器之小型化,特別是要求容 易構裝於電路基板等,要求不論液體或氣體任何地方皆能 或要求可罪度尚,但該專利文獻4並非因應此種要求 考。 供—本:明係、有鑑於此種情況而構成者’其第1目的係提 ^ 2机量感測器,能使用於液體與氣體兩者,適於小型 2 ’能表面構裝於電子電路基板等,可靠度高。又,第2 的係提供—種流量檢測裝置’使用該流量感測器能計量 201213775 流量多之流體。 根據本發明,第1目的之流量感測器,係於表面構裝 型之封裝體内設有流量檢測手段,其特徵在於,具備: 流體流路,係形成於該封裝體内,將流體從設於該封 裝體下面之流人口通過該流量檢測手段導引至設於該封裝 體下面之流出口;以及外部端子,係設於該封裝體外面, 被導引有該流量檢測手段之電氣輸出。 本發明中,為便於說明,設有流入口與流出口之面作 為下面,若將封裝體之上下面反過來,該下面就成為上面, 因此實質上無淪上下哪一面皆可。總之,只要是與構裝此 之對象物(電子電路基板等)對向之面即可。外部端子只要係 封裝體之外面設於任何地方皆可。例如,將如附有引腳之 零件或無引腳之晶片零件之電極端子設於側面,或亦可將 如球格陣列(BGA : Ball Grid Array)之電極端子設於下面。 較佳為’流量檢測手段係具有根據作為設於流體通路 中途之流路阻抗而作用之隔膜孔(開口 '孔口)之上游側與下 游側之壓力差位移之薄膜(隔膜)並根據薄膜之位移檢測流 里之差壓式感測盗。設於薄膜之隔膜扎雖亦可1個,伸亦 可複數個。當設置1個隔膜孔時,較佳係設置於薄膜之中 央。其原因在於,如後所述,當以4個電阻器形成橋式電 路時’容易取得各電阻器之均衡。 較佳為’流量檢測手段係具有薄膜、及作為固定於該 薄膜之變形計之電阻元件之微機電系統(MEMS)感測器即 感測器晶片。此時,在矽(Si)基板之一部分(中央部)藉由蝕201213775 VI. Description of the Invention: [Technical Field] The present invention relates to a flow sensor capable of detecting a gas or liquid flow by accommodating a microelectromechanical system (MENS) sensor wafer in a surface-mounted package And a flow detecting device using the flow sensor. [Prior Art] A semiconductor process technology is used in which a machining technique or a material technique is combined, thereby realizing a three-dimensional microstructure on a substrate. [MENS: Mlcro Eelectro Mechanical System] It is widely used to miniaturize and lightweight components such as sensors or pumps. As a sensor using the MEMS technology, for example, an acceleration sensor, an angular velocity sensor, and a pressure sensing = are widely used. Thousands of demands, as the family's monthly commercial fuel cell system is popularized. Such a fuel cell must accurately detect the flow rate of the fuel gas or the liquid fuel, or supply the amount of gas, and supply the gas generated by the reformer to the fuel gas to control the flow rate thereof. In addition, when the required gas G and the secondary material are taken out from the fuel, although carbon monoxide (c〇) is generated, the carbon monoxide adversely affects the performance of the coal, so that the degree of reduction is also at the same time. H swings 'Oxidized stone anti-J丨』 Japanese hand request to choose the flow control of the air. Also in the field of knife placement or medical related (the drug, clinical test, etc.), in the field of the '5' car wheel: ^ must also detect a small amount of gas or liquid, since the ' 'have a variety of proposals Flowmeters, but most of them are two... 7 v. only the amount of gas flow. 201213775 The 'suitable for measuring liquid flow is very small. For example, although there is a liquid through the orifice (,rifice), with a fluid manometer (manometer) or 2 A pressure sensor or the like detects the pressure difference before and after the orifice (or orifice flowmeter), and provides an impeller in the flow of the fluid, and the flow rate is detected according to the number of rotations of the impeller (turbine flowmeter), but such flow rate All of them have the disadvantages of large-scale. Moreover, it is generally known to use an ultrasonic sensor disposed on the opposite wall to detect ultrasonic waves that are obliquely ejected from the wall of the flow path, according to the time of the present. The change in the detection intensity of the D〇pPler effect is performed by a detector (ultrasonic flowmeter), a voltage change in an orthogonal direction of a magnetic field generated by a fluid in a magnetic field (electromagnetic flowmeter), and heating by a heater When testing fluid The change in fluid temperature thereafter (thermal mass flow meter), etc. Patent Document 1 and Patent Document 2 disclose that a semiconductor sensor having a microelectromechanical system (MEMS) chip constitutes a sense of acceleration. A detector, an angular velocity sensor, a pressure sensor, but a flow sensor is not described herein. Patent Document 3 discloses that a micro-sized glass tube is brought into contact with a silicon (Si) substrate. A micro-electromechanical system (MEMS) wafer, a thermal mass flow meter (thermal flow sensor) that allows liquid to flow through a glass tube. The concept of a differential pressure type flow sensor has been disclosed in Patent Document 4. Using a semiconductor microfabrication technique, a thin film (also known as a separator) is formed on a ruthenium (Si) substrate by an etching technique, and a fluid is passed through a membrane pore (at least one opening) formed in the membrane to thereby generate and The pressure difference proportional to the flow rate is based on the differential pressure formed by the diffusion resistance (piezoresistive element) formed on the film to electrically detect the stress (deformation) generated by the film. Since the single crystal is not plasticized at room temperature 'Therefore, the characteristics are the same, and since the film system s 4 201213775 is integrated with the substrate, it is possible to obtain stable characteristics. Patent Document 1: 曰本特开 Patent Document 2: 曰本特开 Patent Document 3: US Patent Patent Document 4: US Patent C Disclosure of the Invention: US Pat. No. 20-10-28025, No. 2010-19693, US Pat. No. 6,813,944, 2, US Pat. No. 6,625,605, B1, the disclosure of the patents 1, 2, the use of the micro-electromechanical system (mems) technology, reading acceleration, angular velocity, pressure It is not the flow of gas or liquid, and it is not the heuristic flowmeter. The patent disclosed in Patent Read 3 is used to heat the liquid helium flowing in the microtube, so that the thickness of the microtube must be made very thin in order to make the responsiveness. So there is strength: the problem. Further, when a liquid having a low boiling point is measured, there is a problem that bubbles are easily generated in the vicinity of the heater. In Patent Document 4, only the principle of detecting the flow rate based on the deformation of the film is disclosed, and how to apply this principle to the actual one is not disclosed. In other words, it is required to reduce the size of the flow sensor for household fuel cell systems or portable devices, medical devices, etc., and it is particularly required to be easily mounted on a circuit board, etc., regardless of the liquid or gas. It is possible to ask for a guilty degree, but this patent document 4 does not respond to such a requirement. —————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————————— The substrate and the like have high reliability. Further, the second system provides a flow detecting device that uses the flow sensor to measure a fluid having a flow rate of 201213775. According to the invention, the flow sensor of the first aspect is characterized in that the flow rate detecting means is provided in the package of the surface structure type, and comprises: a fluid flow path formed in the package body to discharge the fluid The flow population disposed under the package is guided to the outflow port disposed under the package by the flow detecting means; and the external terminal is disposed outside the package, and the electrical output of the flow detecting means is guided . In the present invention, for convenience of explanation, the surface of the inflow port and the outflow port is provided as the lower side, and if the upper and lower sides of the package are reversed, the lower surface becomes the upper surface, so that substantially no upper and lower sides are available. In short, it suffices to face the object (electronic circuit board or the like) on which the object is mounted. The external terminals can be placed anywhere except the package. For example, an electrode terminal such as a leaded component or a leadless chip component may be provided on the side, or an electrode terminal such as a ball grid array (BGA: Grid Array) may be provided below. Preferably, the flow detecting means has a film (separator) which is displaced according to a pressure difference between the upstream side and the downstream side of the diaphragm hole (opening 'hole) which acts as a flow path impedance provided in the middle of the fluid path, and is based on the film. The differential pressure sensing piracy in the displacement detection flow. Although the diaphragm is provided in the film, it can also be one, and the extension can be plural. When one diaphragm hole is provided, it is preferably disposed at the center of the film. The reason for this is that, as will be described later, when a bridge circuit is formed by four resistors, it is easy to obtain equalization of the respective resistors. Preferably, the flow detecting means has a thin film and a microelectromechanical system (MEMS) sensor, i.e., a sensor wafer, as a resistive element fixed to the deformer of the thin film. At this time, in one part (center portion) of the 矽 (Si) substrate by etching
S 6 201213775 刻形成薄的薄冑,能藉由光微影技術等,將電阻元件或電 路圖案(内部電路圖案)形成於該薄膜。亦即,使用一般所知 之半導體技術,形成該感測器晶片。 較佳為,封裝體係將下基板與上基板重叠,將感測器 晶片之周緣部保持於該等之間,且在薄膜之下面開設流體 々丨L路之〃丨L入口,使形成於上基板之流體流路從薄膜上面連 通至机出口。若以此種方式作成,則能將流體流路之流入 口側之長度作成最短,實質上,只要將流體流路僅形成於 上基板即可,加工變簡單。另外,亦可將流入口與流出口 作成相反。 薄膜係藉由保留感測器晶片之周圍並將其内側蝕刻而 較溥地形成,在該薄膜之單面(例如上面)形成作為變形計之 電阻器。另外,該電阻器藉由絕緣皮膜事先加以塗層。此 時’由於感測器晶片之周緣變厚,只要將感測器晶片夾於 上基板與下基板之間進行保持即可,組裝於薄膜時,未加 不要之應力,特性穩定,亦適於組裝。 薄膜係四角形,若事先將4個電阻器配置於各邊之中 央附近以各電阻器構成惠斯同電橋(wheatstone bridge) 時各電阻器之條件一致較適合。能在上基板之下面事先 a又置包圍薄膜周圍且在其上面隔著間隙對向之垂壁(隆起 緣、大起狀之壁),能在該上基板事先形成用以將接著劑供 ; έχ門隙之肉(充填口)。此時所使用之接著劑係具有觸變 性(thix〇tropic characteristics)之全氟系之接著劑,該接著劑 能藉由毛細管現象流入間隙内。 . 201213775 由於該接著劑具有伴隨流速時,黏性變小,流動性佳, 不伴流速時,黏性變高特性(觸變性),因此,接著劑注入時, :薄膜未施加不要之應力,藉由毛細管力,自動伴隨流逮 机動,順利地流入間隙加以密封。被密封後由於盔流速, 因此接著劑之黏度變高,於薄膜上不要之接著劑不Ί'。, 形成於上基板之流體流路能形成於上基板與重疊於其 *板之間。例如在上基板之上面形成凹槽,用蓋板覆 盍相槽,藉此能以簡單之加工形成流體流路。 在感測器晶片形成内部電路圖案,用以連接作為設於 形計之電阻器 '與從上基板之突起形成於外周側 在下基板形成連接於外部端子之外部電路圖案,倉t 將此等内部電路圖案與外部電路圖案以引線接合加以: 接。在該引線接合之部分,供應給該間 硬化祛,从古丄 义丨王按者劑 ㈣L 上基板之窗供應另一接著劑,則適於 ” °引線接合部分,特別是可對振動提高耐久性。 外部端子,係如前所述,金屬鍍敷成從下板 或側面朝下面延伸之形狀,能作成與無引腳之晶片零 面構裝型之電容器或電阻器等)同樣之端子… 成有所有外部電路圖案之金屬板即.引腳架突出裝 艘夕从工 〜々、対裝 ’將該突出部分作為外部端子。 流量的之流量檢測裝置,係使用請求項1之 , ,、特徵在於,具備:主管材,固定有流量感 窃之封裝體’形成流體之主流路;以及分流路,從玆* 官材將流體分流導引至該流量感測器之流入口,且從:出 201213775 口導引至主管材之主流路。 本發明之流量檢測裝置, 藉由適虽選疋主流路盘八 路之流路剖面積,能適當 a 、刀々比 流路交叉(例如正交)、分則、* ’、 與主 父)刀別連通於流量感測器之流 出口之第1及第2 Μ其44· 〜机八口與流 W S材形成,能作為在第丨副管材 指向主流路之上游方向 夕 《開口 ’在第2副管材形成指向主 机路之下游方向之開口之生 m對土曰代μ 坆。此時,能防止或抑制流體 動壓對流置感測器之影鲢 此處’開口亦可係複數。開口 亦可係狹縫。 f構裝流f m與其控制電路零件之控制基板固定 於主&材’第1及f 2副管材能貫通該控制基板,連接於 流量感測器之流人σ與流出σ。例如若事先將設定變形計 (電阻器)之輸出電壓之增益調整或進行偏置電壓調整之增 幅電路搭載於控制基板,變形計之輸出訊號不易受配線之 雜讯之影響,適於提高檢測精度。 由於本發明之第1發明係將流量檢測感測器内設於封 裝體者’ ®此能小型化’提高可靠度。又,由於將流體流 路X於封凌體内,將該流體流路之流入口與流出口 一起集 中"X置於封裝體之一面(下面),因此能縮短流體流路與電路 基板等之構裝對象物之連接,且能加以小型化,能高密度 構式又,由於將外部端子設於封裝體之外面,因此能表 面構裝封裝體,更加適合高密度之構裝。 又’本發明之第2發明之流量檢測裝置,將該流量感 測器之封裝體固定於作為流體主流路之主管材,從該主管 201213775 材將流體分流’導引至流量感測器之流入口,從流量感測 器之流出口將流體返回主流路,因此能檢測流量多之流體 之流量。 【實施方式】 以下,根據圖式詳細說明本發明之實施形態。另外, 在以下說明中’雖視需要使用表示特定方向或位置之用語 (例如,「上」、「下」、「左」、「右」及包含該等用語 之其他用語)’但其原因在於,使用該等用語容易理解參照 圖式之發明,並非依照該等用語之意限定本發明之技術範 圍者。又’表示於複數個圖式之同一符號部分係表示同一 部分或構件。 (實施例1) 圖1至4中,符號1 〇係流量感測器,係收納於表面構 裝型之封裝體1 2者。封裝體1 2之4邊係8mm左右之小者, 如圖3所示’係積層下基板14、上基板16、蓋板18、面板 20並加以固定者。下基板14 '上基板16、蓋板18係硬質 樹脂製。 _ 在下基板14之上面’為藉由圖3、4能瞭解,在由中 央偏心於一側之位置形成有俯視呈四角形之感測器晶片收 納室22。該收納室22之底部24之各邊長係比上部26之各 邊長短之四角形’在2個四角形之間透過水平之段部28成 為同心重疊之形狀。在該段部28之上固定有後述之感測器 晶片42。 在收納室22底部之中央,作為流體流路一部分之流入S 6 201213775 A thin thin crucible is formed, and a resistive element or a circuit pattern (internal circuit pattern) can be formed on the thin film by photolithography or the like. That is, the sensor wafer is formed using generally known semiconductor technology. Preferably, the package system overlaps the lower substrate and the upper substrate, and the peripheral portion of the sensor wafer is held between the two, and a liquid inlet of the fluid L is formed under the film to form the upper portion. The fluid flow path of the substrate communicates from the upper surface of the membrane to the exit of the machine. According to this configuration, the length of the inflow port side of the fluid flow path can be minimized, and the fluid flow path can be formed only on the upper substrate, and the processing can be simplified. Alternatively, the inflow port may be opposite to the outflow port. The film is formed relatively thinly by reserving the periphery of the sensor wafer and etching the inside thereof, and a resistor as a strain gauge is formed on one side (e.g., above) of the film. In addition, the resistor is previously coated by an insulating film. At this time, since the periphery of the sensor wafer is thick, the sensor wafer can be held between the upper substrate and the lower substrate, and the stress is not applied when the film is assembled, and the characteristics are stable. Assembly. The film is a quadrangular shape. If four resistors are placed in the middle of each side in the vicinity of each side, the conditions of the resistors are suitable when the resistors constitute a wheatstone bridge. A vertical wall (a raised edge, a large wall) opposite to the periphery of the film and on the upper surface of the upper substrate can be formed on the lower surface of the upper substrate, and the upper substrate can be formed in advance for supplying the adhesive; The meat of the door gap (filling port). The adhesive used at this time is a perfluorene-based adhesive having thixotropic characteristics, and the adhesive can flow into the gap by capillary action. 201213775 Since the adhesive has a viscosity accompanying the flow rate, the viscosity is small, the fluidity is good, and the viscosity is high (thixotropy) when the flow rate is not accompanied. Therefore, when the adhesive is injected, the film does not apply an unnecessary stress. By capillary force, it automatically catches up with the flow and smoothly flows into the gap to seal. After being sealed, due to the flow velocity of the helmet, the viscosity of the adhesive becomes high, and no adhesive on the film is not Ί. The fluid flow path formed on the upper substrate can be formed between the upper substrate and the plate. For example, a groove is formed on the upper substrate, and the phase groove is covered with a cover plate, whereby the fluid flow path can be formed by simple processing. Forming an internal circuit pattern on the sensor wafer for connecting an external circuit pattern formed on the outer peripheral side of the resistor formed on the outer peripheral side of the resistor formed on the outer substrate from the upper substrate, and the external circuit pattern is connected to the external terminal. The circuit pattern is connected to the external circuit pattern by wire bonding: In the portion where the wire is bonded, the hardened crucible is supplied, and another adhesive is supplied from the window of the upper substrate of the ancient 按 按 按 按 四 四 四 四 , , , , , 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线 引线The external terminal is as described above, and the metal is plated to extend from the lower plate or the side surface to the lower side, and can be made into the same terminal as the leadless wafer zero-face type capacitor or resistor. The metal plate having all the external circuit patterns, that is, the lead frame is protruded, and the protruding portion is used as an external terminal. The flow rate detecting device of the flow rate uses the request item 1, The utility model is characterized in that: a main material, a package body fixed with a flow tampering agent's main flow path for forming a fluid; and a branch flow path for guiding the fluid flow from the official material to the flow inlet of the flow sensor, and from: The flow detection device of the present invention is guided to the main road of the main material. The flow detection device of the present invention can appropriately cross the flow path (for example, orthogonal) by selecting the cross-sectional area of the flow path of the main road. ,Minute Then, * ', and the main father) are connected to the first and second outlets of the flow sensor, and the 44·8 machine is formed with the flow WS material, which can be used as the secondary pipe to the mainstream road. In the upstream direction, the "opening" is formed in the opening of the second sub-pipe to the downstream direction of the main path, and can prevent or suppress the influence of the hydrodynamic pressure on the flow sensor. 'The opening can also be plural. The opening can also be a slit. The f-package flow fm and the control board of the control circuit component are fixed to the main & material' the first and f 2 sub-tubes can penetrate the control substrate and connect to the flow sense The flow rate σ and the outflow σ of the detector. For example, if the gain circuit for setting the gain of the output voltage of the strain gauge (resistor) or the bias voltage is applied to the control board, the output signal of the strain gauge is not easily affected by the wiring. The influence of the noise is suitable for improving the detection accuracy. The first invention of the present invention improves the reliability by providing the flow rate detecting sensor in the package, which can be miniaturized. In the body of Feng Ling, will The flow inlet and the outlet of the fluid flow path are concentrated on one side (lower side) of the package, so that the connection between the fluid flow path and the substrate to be mounted can be shortened, and the size can be reduced. In the density configuration, since the external terminal is provided on the outer surface of the package, the package can be surface-mounted and is more suitable for high-density mounting. Further, the flow rate detecting device according to the second invention of the present invention senses the flow rate. The package of the device is fixed to the main material as the main flow path of the fluid, and the fluid is diverted from the main pipe 201213775 to the flow inlet of the flow sensor, and the fluid is returned to the main flow path from the flow outlet of the flow sensor, so [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, 'the term indicating a specific direction or position is used as needed (for example, "upper", "Bottom", "Left", "Right" and other terms containing these terms) 'But the reason is that it is easy to understand the invention of the reference schema using these terms, and In accordance with these terms are intended to define the scope of the techniques of this invention are. Further, the same reference numerals are used to refer to the same parts or components. (Embodiment 1) In Figs. 1 to 4, the symbol 1 流量-type flow sensor is housed in a surface mount type package 1 2 . The four sides of the package 1 2 are smaller than about 8 mm, and as shown in Fig. 3, the lower substrate 14, the upper substrate 16, the cover 18, and the panel 20 are fixed and fixed. The lower substrate 14' upper substrate 16 and the cover plate 18 are made of a hard resin. _ On the upper surface of the lower substrate 14, as can be understood from Figs. 3 and 4, the sensor wafer receiving chamber 22 having a quadrangular shape in plan view is formed at a position eccentric to one side from the center. The sides of the bottom portion 24 of the accommodating chamber 22 are shorter than the sides of the upper portion 26, and the quadrangular shape which passes through the horizontal portion 28 between the two squares is concentrically overlapped. A sensor wafer 42 to be described later is fixed on the segment portion 28. In the center of the bottom of the storage chamber 22, as an inflow of a part of the fluid flow path
S 10 201213775 口 3〇係開口。該流入口 30之下端係於下基板14之下面開 口(參照圖4卜在下基板14,在與該收納室22之偏心方向 之相反側形成有作為流體流路—部分之流出。3 2。因此在 俯視下收納室22與流入口 30與流出口 32係位於通過下 基板14之上面中央之直線34(參照圖3)上。另外,在下基 板之下面’在與該直線34正交之直線上形成有一對二 位銷36、36 ’(參照圖2、冑4)。定位銷%係將該流量感 測器10搭載於電路基板等時定位用。 在下基板14,以隔該直線34大致對稱之方式形成有多 數個(圖3、5中$ 8個)之外部電路圖案%。此等外部電路 圖案,38能藉由光微影技術形成。又,亦可將此等電路圖案 事先衝壓加卫於金屬板之引腳架固定於下基板14,將不要 部分加以除去藉此形成。此等外部電路圖f 3 8 ( _端(内端) 延伸至收納部22附近,另一端(外端)係 側面!伸至下基板…面。出現在該側面二 感測器10之外部端子4 〇。 接著,參照圖4、8,說明作為本發明之流量檢測手段 之感測益晶片42。該感測器晶片42係利用半導體製程,形 成於4邊為3麵左右大小之石夕⑻基板44。石夕單晶之石夕基 板44係能裝入該下基板14之收納部22之尺寸之平板,在 :下面中央形成有被四角錐面46包圍之薄的薄膜牦。該薄 膜广能藉由一般所知之蚀刻,例如感應耗合電_: IndUCtlVely Coupled Pla_) ’ 反應式離子钱刻⑻£S 10 201213775 口口〇 Opening. The lower end of the inflow port 30 is open to the lower surface of the lower substrate 14 (see FIG. 4, the lower substrate 14 is formed, and an outflow is formed as a fluid flow path portion on the side opposite to the eccentric direction of the storage chamber 22. The storage chamber 22, the inflow port 30, and the outflow port 32 are located on a straight line 34 (see FIG. 3) passing through the center of the upper surface of the lower substrate 14 in plan view. Further, the lower surface of the lower substrate is on a line orthogonal to the straight line 34. A pair of two-position pins 36 and 36' are formed (see FIGS. 2 and 4). The positioning pin % is used for positioning the flow rate sensor 10 when mounted on a circuit board or the like. The lower substrate 14 is substantially symmetrical with respect to the straight line 34. The method forms a plurality of external circuit patterns % ($8 in Figures 3 and 5). These external circuit patterns 38 can be formed by photolithography. Alternatively, these circuit patterns can be stamped in advance. The lead frame of the metal plate is fixed to the lower substrate 14 and is formed by removing unnecessary portions. These external circuit diagrams f 3 8 (the _ end (inner end) extends to the vicinity of the accommodating portion 22, and the other end (outer end) Side of the line! Stretches to the lower substrate... surface appears on the side The external terminal 4 of the second sensor 10 is described below. Next, the sensory wafer 42 as the flow rate detecting means of the present invention will be described with reference to Figs. 4 and 8. The sensor wafer 42 is formed on the four sides by a semiconductor process. It is a slab (8) substrate 44 having a size of about 3 sides. The slab substrate 44 of the singular single crystal can be placed in a flat plate of the size of the accommodating portion 22 of the lower substrate 14, and is surrounded by a quadrangular pyramid 46 at the center of the lower surface. Thin film 牦. The film can be widely etched by general known, such as induction consuming electricity _: IndUCtlVely Coupled Pla_) 'Reactive ion money engraving (8) £
Ion Etching)等形成。在該薄犋48之中央形成有作 201213775 為隔膜孔之開口 50。該開口 50同樣地能藉由蝕刻或雷射加 工等形成。開口 50之直徑雖亦可依照測定範圍或液體種類 (液體或氣體等)加以變更,但本實施例中,開口 5〇之直栌 為 50 " m。 另外,圖8所示之虛線係形成於薄膜48之外周之該四 角錐面46 ’該四角錐面46之外側係圖4所示之周圍部52。 該周圍部52係未被蝕刻而保留厚度之矽基板44之一部分。 在形成有薄膜48之矽基板44之上面,形成有:4個電 阻元件(變形計)R1〜R4;沿外周緣形成之多數個(6個)電極 墊54(54a〜54f);以及連接此等之内部電路圖案56(圖8、 9)。此等能使用光微影等半導體製造技術形成。又,電阻 R1〜R4係如圖8所示,俯視下,位於離四角形之薄膜48 之各邊中央些許内側,電路圖案56係分別連接於從電阻幻 〜R4延伸至外周方向後而沿薄膜48之外周(四角錐面之外 周)形成之電極墊54。 圖8中,符號58a、58b係溫度感測器之電極塾,在此 等之間形成有作為溫度感測器之感熱電阻元件6〇。在感測 器晶片42之上面,於電極墊54、58之内側形成氮化矽 (SiN)、或碳化矽(SlC)等絕緣皮膜,將該絕緣皮膜作為保護 膜。 乂此種方式形成之感測器晶片42係被收容於下基板^ 4 之收納部22。亦即如圖3、4所示,從上充填於收納部, 將矽基板44之周圍部52保持於收納部22之段部28。又, 該感測器晶片42係使用接著劑被固定於該收納部22。在此Ion Etching) is formed. An opening 50 for the diaphragm hole is formed in the center of the thin web 48 as 201213775. The opening 50 can likewise be formed by etching or laser processing or the like. Although the diameter of the opening 50 can be changed depending on the measurement range or the type of liquid (liquid or gas, etc.), in the present embodiment, the diameter of the opening 5 is 50 " m. Further, the broken line shown in Fig. 8 is formed on the outer circumference of the film 48 by the four-sided tapered surface 46'. The outer side of the four-sided tapered surface 46 is the peripheral portion 52 shown in Fig. 4. The peripheral portion 52 is a portion of the substrate 44 that is not etched to retain thickness. On the upper surface of the germanium substrate 44 on which the thin film 48 is formed, four resistive elements (deformation meters) R1 to R4 are formed; a plurality of (six) electrode pads 54 (54a to 54f) formed along the outer peripheral edge; and The internal circuit pattern 56 (Figs. 8, 9). These can be formed using semiconductor manufacturing techniques such as photolithography. Further, the resistors R1 to R4 are as shown in Fig. 8. In plan view, they are located slightly inside the center of each side of the rectangular film 48, and the circuit patterns 56 are respectively connected to extend from the resistor illusion R4 to the outer peripheral direction and along the film 48. The electrode pad 54 is formed on the outer circumference (outer circumference of the quadrangular pyramid). In Fig. 8, reference numerals 58a and 58b are electrodes 温度 of a temperature sensor, and a thermistor element 6A as a temperature sensor is formed between them. On the upper surface of the sensor wafer 42, an insulating film such as tantalum nitride (SiN) or tantalum carbide (S1C) is formed inside the electrode pads 54, 58, and this insulating film is used as a protective film. The sensor wafer 42 formed in this manner is housed in the housing portion 22 of the lower substrate 4 . That is, as shown in FIGS. 3 and 4, the peripheral portion 52 of the cymbal substrate 44 is held in the segment portion 28 of the accommodating portion 22 by being filled in the accommodating portion. Further, the sensor wafer 42 is fixed to the housing portion 22 using an adhesive. here
S 12 201213775 狀態下,感測器晶片42之電極塾54、58被引線接合於下 基板14之外部電路圖㈣之内側端部。亦即如圖5所示, 將金(Au)或銘(入1)之弓丨始, i )弓丨線62藉由熱壓接或超音波接合連 於電極墊54、58與外部電路圖案38。 。。曰在該上基板16之下面(與下基板14對向之面),在感測 T曰曰片42之周緣部上面形成有隔著間隙參照圖7)對向 垂壁(大起隆起)66。亦即該垂壁66在俯視下係位於四 角錐面46之上方,包圍薄膜48之周圍之下垂壁狀。然後, 利用毛細管現象或表面張力,使觸變性接著劑⑼流入該間 隙64中。間隙64較佳係5〜15微求。 在上基板16形成有於薄膜48之中央上方開口且與該 中央之直線34(參照圖3)平行之流體流路7〇。該流體流路 之另一端連通於該下基板14之流出口 32(參照圖4)。該 流體流路70,將形成於上基板16之上面 3)以該蓋板18從上方堵住,藉此能形成於 之凹槽72(參照圖 上基板16之上面 與蓋板18之間。若以此種方式作成,就能用半導體加工技 術(蝕刻等)容易形成與上基板丨6平行之流體流路7〇。 將該上基板16隔熱硬化性接著片17重疊於下基板 i4(參照圖3),在薄膜48之上面,垂壁66隔著既定間隙64 對向,在此狀態下’上基板16被接著固定於下基板14。另 外’在上基板16及蓋板18,如圖3、6所示,形成有從垂 臂66之外側面臨感測器晶片42之上面周圍之4個窗(充填 口)74。此等窗74係如前所述’被利用於將觸變性接著劑 68供應至感測器晶片42與垂壁66之間時。又,該觸變性 13 201213775 接著劑68硬化後,從該窗74注入另一接著劑,用以固定 引線62。 根據本實施例,從流入口 30流入之流體(氣體或液體) 係流入薄膜48之下方,通過薄膜48之隔膜孔50後流入流 體流路70 ’再從流出口 32流出。藉由流體通過隔膜孔時之 隔膜孔效果,在薄膜48之雙面間產生壓力差,薄膜48位 移至低壓側即上側。藉由該位移而加於電阻R1〜R4之應力 變化’该電阻值亦變化。結果,如圖9所示之橋式電路之 輸出變化。該輸出電壓之變化與加於薄膜48之雙面之壓力 差對應。由於該壓力差根據哈庚-帕穗定律(Hagen_p〇iseuilleIn the state of S 12 201213775, the electrode pads 54, 58 of the sensor wafer 42 are wire-bonded to the inner end portion of the external circuit diagram (4) of the lower substrate 14. That is, as shown in FIG. 5, the gold (Au) or the first (into 1) bow is started, and the i) bow line 62 is connected to the electrode pads 54, 58 and the external circuit pattern by thermocompression bonding or ultrasonic bonding. 38. . . The lower surface of the upper substrate 16 (the surface facing the lower substrate 14) is formed on the upper surface of the peripheral portion of the sensing T-sheet 42 with reference to FIG. 7) opposite to the vertical wall (large lifting ridge). . That is, the vertical wall 66 is located above the quadrangular pyramid 46 in plan view, and surrounds the periphery of the film 48 to hang down the wall. Then, the thixotropic adhesive (9) is caused to flow into the gap 64 by capillary action or surface tension. The gap 64 is preferably 5 to 15 micro. The upper substrate 16 is formed with a fluid flow path 7〇 which is open above the center of the film 48 and which is parallel to the central straight line 34 (see Fig. 3). The other end of the fluid flow path communicates with the outflow port 32 of the lower substrate 14 (see Fig. 4). The fluid flow path 70 is formed on the upper surface 3 of the upper substrate 16 by blocking the cover plate 18 from above, thereby being formed in the recess 72 (refer to the upper surface of the substrate 16 and the cover plate 18 on the drawing). When it is formed in this manner, the fluid flow path 7〇 parallel to the upper substrate 丨 6 can be easily formed by semiconductor processing technology (etching, etc.). The upper substrate 16 heat-insulating adhesive sheet 17 is superposed on the lower substrate i4 ( Referring to Fig. 3), on the upper surface of the film 48, the vertical wall 66 is opposed to each other via a predetermined gap 64. In this state, the upper substrate 16 is then fixed to the lower substrate 14. In addition, the upper substrate 16 and the cover 18 are As shown in Figures 3 and 6, four windows (filling ports) 74 are formed which face the outer surface of the sensor wafer 42 from the outer side of the vertical arm 66. These windows 74 are utilized as described above for being thixotropic. The adhesive 68 is supplied between the sensor wafer 42 and the vertical wall 66. Further, after the thixotropic property 13 201213775 is cured, another adhesive is injected from the window 74 to fix the lead 62. According to the present embodiment For example, a fluid (gas or liquid) flowing in from the inflow port 30 flows into the lower side of the film 48 through the film 4 The diaphragm hole 50 of 8 flows into the fluid flow path 70' and then flows out of the outflow port 32. By the effect of the diaphragm hole when the fluid passes through the diaphragm hole, a pressure difference is generated between the both sides of the film 48, and the film 48 is displaced to the low pressure side, that is, the upper side. The change in stress applied to the resistors R1 to R4 by the displacement also changes in the resistance value. As a result, the output of the bridge circuit shown in Fig. 9 changes. The change in the output voltage is applied to both sides of the film 48. The pressure difference corresponds to the pressure difference according to Hagen-Pai's law (Hagen_p〇iseuille
Law),與流體之流量成比例,因此藉由檢測該壓力差能檢 測流量。 (實施例2) 圖1 〇〜1 2係表示使用該流量感測器之流量檢測裝置。 在此4圖中,符號8 〇係形成流體通過之主流路8 2之主管 材。在主管材80之管臂—體形成有沿其長度方向之基板收 納部84。在該基板收納部84收納有控制基板%。在該控 制基板86之上面構裝有流量感測器1()、及其輸出訊號之增 幅電路,亦可視需要事先構裝另一運算電路例如進行增益 s 周整或偏置電壓調整之電路等。 此處,流罝感測器1 〇,通過該薄膜48中心之直線34(參 照圖3)係與主流路82平扞,H u λ , 订且以k入口 3 0比流出口 3 2更 位於主流路8 2之上流側之古_4· m〜 之方式固疋。又,位於流量感測器 1 〇下方之連接構件8 8係介於批制其^ 於&制基板86與主管材80之間。Law) is proportional to the flow rate of the fluid, so the flow rate can be detected by detecting the pressure difference. (Embodiment 2) Fig. 1 〇 to 1 2 shows a flow rate detecting device using the flow sensor. In the Fig. 4, the symbol 8 is the main material of the main flow path 8 2 through which the fluid passes. The tube arm body of the main material 80 is formed with a substrate receiving portion 84 along its length. The control substrate % is accommodated in the substrate housing portion 84. An amplitude increasing circuit of the flow sensor 1() and its output signal is disposed on the control substrate 86, and another arithmetic circuit such as a circuit for performing gain s or offset voltage adjustment may be configured in advance. . Here, the flow sensor 1 〇 passes through the straight line 34 (refer to FIG. 3) at the center of the film 48, and is flush with the main flow path 82, H u λ , and is located at the k inlet 30 is more located than the flow outlet 3 2 The way of the _4·m~ on the flow side of the mainstream road 8 2 is fixed. Further, the connecting member 8 8 located below the flow sensor 1 is interposed between the substrate 86 and the main material 80.
S 14 201213775 在連接構件88之下面,丄 如圖12所示’僅偏離流量感 測器10之流入口 3〇盥流出口 n 里4 一 ,、L出口 32之距離,固定第i及第2 副管材90、92之上端。遠| 4 ^ 逆接構件88係液密地固定於主管 材80之管壁所鑽孔開 炙開此時,第1及第2副管材90、 92 f越主流路82予以固定。第1及第2副管材90、92之 端係貫通忒連接構件88,進—步透過設於控制基板%之 ^ 液密地連接於流量感測器10之流入口 30及流出口 32者。 在第1副管材90形成有作為指向流體之上游方向之開 之複數個狹縫94 ’在第2副管材92形成有作為指向流體 之:游方向之開口之複數個狹、縫96。結果,主流路82之流 體机動之部分係透過作為分流路之副管材9〇、92而分流 2流量感測器10。流量感測器1〇係檢測分流於該分流路之 机里’藉此能特定流向主管材8〇之全流量。 在該控制基板86能事先搭載流量感測器1〇之訊號增 中田電路,並且能事先搭載運算電路、溫度修正電路等適當 電路。該運算電路係藉由此種主流路82與分流路之分流比 •J仏正桃里感測器1 〇之輸出,進行用以求出主流路82 之流量之運算。 【圖式簡單說明】 圖1係表示本發明之流量感測器一實施例之上面側之 立體圖。 圓2係圖1所示之流量感測器之底面側立體圖。( 圓3係圖1所示之流量感測器之分解立體圖。 15 201213775 玉μ叫态之側剖面 之直線34之!V_IV線剖面圖。 圆,沿圖3 . 圖5係表示將作為流量檢測手段之感測 下基板狀態之立體圖。 月固疋力 圖6係表示將上基板積層於下基板狀態之立體圆。 圖7係圖4中VII部箭頭所示部分之放大剖面圖。 圖8係表示感測器晶片之電路圖案之俯視圖。 圖9係表示用圖8之電阻元件形成之惠斯同電橋連接 電路之圖。 圖10係本發明之流量檢測裝置一實施形態之立體圖。 圖11係沿主管材之中心線將圖丨0之流量檢硎裝置剖 面之立體圖。 圖12係沿主管材之中心線將圖1〇之流量檢測装置剖 面之剖面左側視圖。 【主要元件符號說明】S 14 201213775 Below the connecting member 88, as shown in FIG. 12, 'only the distance from the inflow port 3 of the flow sensor 10, the distance of the outlet port 4, and the distance of the L outlet 32, the first and second ends are fixed. The upper ends of the secondary pipes 90, 92. Far | 4 ^ The reverse member 88 is liquid-tightly fixed to the pipe wall of the main pipe 80. When the pipe is opened, the first and second sub-pipes 90, 92f are fixed to the main pipe 82. The ends of the first and second sub-tubing members 90 and 92 are passed through the crucible connecting member 88, and are further connected to the inflow port 30 and the outflow port 32 of the flow rate sensor 10 by liquid-tight connection on the control substrate. The first sub-tubing member 90 is formed with a plurality of slits 94' which are opened in the upstream direction of the fluid. The second sub-tubing member 92 is formed with a plurality of slits 96 which are openings in the swimming direction. As a result, the portion of the main flow path 82 that is maneuvered is shunted by the flow sensor 10 through the sub-tubes 9 〇, 92 as the branching path. The flow sensor 1 detects that the flow is split into the split flow path, whereby the total flow to the main pipe 8 can be specified. The control board 86 can be equipped with a signal booster Numian circuit of the flow rate sensor 1 in advance, and an appropriate circuit such as an arithmetic circuit or a temperature correction circuit can be mounted in advance. The arithmetic circuit calculates the flow rate of the main flow path 82 by the output of the main flow path 82 and the shunt path. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing the upper side of an embodiment of a flow sensor of the present invention. Circle 2 is a bottom side perspective view of the flow sensor shown in FIG. (Circular 3 is an exploded perspective view of the flow sensor shown in Figure 1. 15 201213775 The line of the side profile of the jade is called 34! The cross section of the V_IV line. The circle, along Figure 3. Figure 5 shows the flow detection A perspective view of the state of the substrate is sensed by the means. Fig. 7 is a perspective view showing a portion in which the upper substrate is laminated on the lower substrate. Fig. 7 is an enlarged cross-sectional view showing a portion indicated by an arrow VII in Fig. 4. Fig. 8 is a view showing Fig. 9 is a view showing a Wheatstone-bridge connection circuit formed by the resistor element of Fig. 8. Fig. 10 is a perspective view showing an embodiment of the flow rate detecting device of the present invention. A perspective view of the cross-section of the flow inspection device along the center line of the main pipe. Fig. 12 is a left side view of the cross section of the flow detecting device of Fig. 1 along the center line of the main material. [Main component symbol description]
S 10 流量感測器 12 封裝體 14 下基板 16 上基板 18 蓋板 22 感測器晶片收納部 30 流入口(流體流路之一 部分) 32 流出口(流體流路之一 部分) 34 通過下基板之上面中央之直線 16 201213775 38 40 42 44 48 50 54、 56 62 64 66 68 70 74 80 82 86 88 90 92 94 ' R1 外部電路圖案 外部端子 感測晶片(流莖檢測手段) 矽基板 薄膜 隔膜孔(開口) 5 8電極墊 内部電路圖案 引線 間隙 垂壁 觸變性接著劑 流體流路 窗(接著劑注入口) 主管材 主流路 控制基板 連接構件 第1副管材(分流路) 第2副管材(分流路) > 96開口(狹縫) 、R2、R3、R4 電阻元件(變形計、電阻器) 17S 10 Flow sensor 12 Package 14 Lower substrate 16 Upper substrate 18 Cover plate 22 Sensor wafer storage portion 30 Inlet (one part of fluid flow path) 32 Flow outlet (one part of fluid flow path) 34 Passing through lower substrate The upper center line 16 201213775 38 40 42 44 48 50 54, 56 62 64 66 68 70 74 80 82 86 88 90 92 94 ' R1 external circuit pattern external terminal sensing wafer (flow stem detection means) 矽 substrate film diaphragm hole ( Opening) 5 8 electrode pad internal circuit pattern lead gap vertical wall thixotropy adhesive fluid flow path window (adhesive injection port) main material main road control substrate connection member first sub-pipe (split path) second sub-pipe (diverting path) ) > 96 opening (slit), R2, R3, R4 resistance element (deformation meter, resistor) 17
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PCT/JP2010/005658 WO2011121680A1 (en) | 2010-03-30 | 2010-09-16 | Flowrate sensor and flowrate detection device |
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