201212148 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於：使用.於表面上被形成有轉印圖案 之模版來在基板上形成特定的光阻圖案之壓印系統、使用 有該壓印系統之壓印方法、程式及電腦記憶媒體。 【先前技術】 例如在半導體裝置之製造工程中，例如係對於半導體 晶圓（以下，稱作「晶圓」）進行光微影處理，並進行有 在晶圓上形成特定的光阻圖案之工程。而後，將此光阻圖 案作爲遮罩，而進行對於晶圓上之被處理膜的蝕刻處理， 之後，進行光阻膜之除去處理等，而形成特定之被處理膜 的圖案。 在形成上述之光阻圖案時，爲了謀求半導體裝置之更 進一步的高積體化，係對於該光阻圖案之細微化有所要求 。一般而言，光微影處理中之細微化的極限，係爲在曝光 處理中所使用之光的波長左右》因此，從先前技術起，將 曝光處理之光短波長化的硏究係日益進行。然而，曝光光 源之短波長化，在技術性以及成本性上係有所極限，若是 僅藉由增進光之短波長化的方法，則係有著例如在形成數 奈米尺度之細微的光阻圖案時會有所困難的情況。 因此，近年來，代替在晶圓上進行光微影處理，係提 案有使用所謂的被稱作壓印之方法來在晶圓上形成細微之 光阻圖案的手段。此方法，係使於表面上具有細微之圖案 201212148 的模版（亦有被稱作模體或者是模具的情況）壓著在被形 成於晶圓之上的光阻膜之表面，之後將其剝離，而在該光 阻膜之表面上直接進行圖案之轉印（專利文獻1)。 (先前技術文獻〕 〔專利文獻〕 〔專利文獻1〕日本特開2009-43 998號公報 【發明內容】 〔發明所欲解決之課題〕 然而，在現狀上，要在模版之表面形成特定之細微圖 案一事，在技術性上係爲困難。亦即是，要在模版上形成 具備有局縱橫比之深溝的圖案一事，係爲困難。若是使用 該種模版來進行上述之壓印處理，則在晶圓上係被形成有 膜厚爲薄之光阻圖案。於此情況，當之後進行晶圓上之被 處理膜的蝕刻處理時，光阻圖案係無法發揮充分的耐蝕刻 性能，而無法適當地形成被處理膜之圖案。 因此’可以考慮有：在進行上述之壓印處理前，預先 在晶圓之被處理膜上形成其他之光阻膜。於此種情況，係 將藉由進行壓印處理一事所形成的光阻圖案作爲遮罩，來 對於其他之光阻膜進行蝕刻處理，而形成其他的光阻圖案 。如此一來’此孽之2個的光阻圖案係成爲一體，並發揮 充分的耐蝕刻性能’而能夠適當地形成被處理膜之圖案。 然而，在其他之光阻膜的形成處理和壓印處理中，於 每一枚之晶圓處所需要的處理時間係爲相異。其他之光阻 -4- 201212148 膜，例如係藉由在晶圓上塗布塗布液，而後對該塗布液進 行燒成，而形成之。於此情況，在一枚之晶圓處所需要的 處理時間係爲短，在現狀之裝置中，例如係能夠在每小時 而對於200枚之晶圓來進行其他之光阻膜的形成處理。另 一方面，在壓印處理中，係在晶圓上形成光阻膜，之後進 行複數次（例如1 00次）之對於該光阻膜的模版之圖案轉 印。因此，在一枚晶圓處所需要的處理時間係爲長，在現 狀之裝置中，例如每小時對於20枚之晶圓進行壓印處理一 事，係爲極限。 若是連續性進行此種處理時間互爲相異之2個的處理 ，則在進行壓印處理的期間中，係不得不將其他之光阻膜 的形成處理停止。故而，要對於複數之晶圓而將特定的光 阻圖案連續性地以良好效率來形成一事，在現實上係爲困 難，而無法與半導體裝置之量產化作對應。 本發明，係爲有鑑於上述之點所進行者，其目的，係 在於使用模版來在基板上將特定的光阻圖案適當地且有效 率地來形成。 〔用以解決課題之手段〕 爲了達成上述目的，本發明，係爲一種壓印系統，係 爲使用在表面上被形成有轉印圖案之模版，來在基板上形 成特定之光阻圖案的壓印系統，其特徵爲，具備有：基板 處理站，係在基板上形成第1光阻膜；和壓印處理站，係 被配置有複數之壓印單元，並且被與前述基板處理站作連 -5- 201212148 接，該些壓印單元，係爲在被形成有前述第1光阻膜之基 板上形成第2光阻膜，並將前述轉印圖案轉印至前述第2光 阻膜上，而在該第2光阻膜上形成特定之光阻圖案者；和 基板搬入搬出站，係被與前述基板處理站作連接，並將基 板對於該基板處理站進行搬入搬出：和模版搬入搬出站， 係被與前述壓印處理站作連接，並將模版對於該壓印處理 站進行搬入搬出。 若依據本發明，則對於1個基板處理站，於壓印處理 站處係配置有複數之用以進行第2光阻膜之形成和特定的 光阻圖案之形成（以下，亦有稱作「壓印處理」的情況） 的壓印單元。因此，係能夠藉由基板處理站來在複數之基 板上形成第1光阻膜，並從該基板處理站來將被形成有第1 光阻膜之複數的基板連續搬送至壓印處理站處。又，在壓 印處理站處，由於係被連接有模版搬入搬出站，因此，係 能夠從該模版搬入搬出站而將複數之模版連續搬送至壓印 處理站處。而後，在壓印處理站處，係能夠使用各模版而 在各壓印單元處並行地進行對於各基板之壓印處理。因此 ，就算是當在基板處理站處之處理時間和在壓印單元處之 處理時間有所差異的情況時，亦能夠並不使在基板處理站 處之基板的處理停止地來連續地對於基板進行適當之處理 。故而，係能夠適當且有效率地在基板上形成特定之光阻 圖案。 前述基板處理站，係亦可具備有在基板上塗布塗布液 之塗布單元、和將前述被塗布的塗布液作燒成之加熱單元 -6- 201212148 前述塗布單元，係亦可爲將形成前述第1光阻膜之液 體的蒸氣供給至基板上者。 在前述壓印處理站處，係亦可設爲：被形成有將前述 複數之壓印單元在水平方向上作了並排配置之2列的壓印 區塊，並且在前述2列的壓印區塊間，係被形成有用以將 基板搬送至前述各壓印單元處之搬送區域。 前述模版搬入搬出站，係亦可在前述各壓印單元之每 一者處而被設置有複數。 又，在前述搬送區域處，係亦可將模版搬送至前述各 壓印單元處。 前述基板處理站，係亦可具備有在被形成有前述第1 光阻膜之基板上而塗布使其與前述第2光阻膜間之密著性 提高的密著劑之密著劑塗布單元。 前述密著劑塗布單元，係亦可爲將密著劑之蒸氣供給 至被形成有前述第1光阻膜之基板上者。 前述密著劑塗布單元，係亦可具備有對於基板而供給 水蒸氣之功能。 由其他觀點所致之本發明，係爲一種壓印方法，係爲 在壓印系統中，使用在表面上被形成有轉印圖案之模版， 來在基板上？i成特定之光阻圖案的壓印方法，其特徵爲： 前述壓印系統，係具備有：基板處理站，係在基板上形成 第1光阻膜；和壓印處理站，係被配置有複數之壓印單元 ，並且被與前述基板處理站作連接，該些壓印單元，係爲 201212148 在被形成有前述第1光阻膜之基板上形成第2光阻膜，並將 前述轉印圖案轉印至前述第2光阻膜上，而在該第2光阻膜 上形成特定之光阻圖案者；和基板搬入搬出站，係被與前 述基板處理站作連接，並將基板對於該基板處理站進行搬 入搬出；和模版搬入搬出站，係被與前述壓印處理站作連 接，並將模版對於該壓印處理站進行搬入搬出，在前述基 板處理站處，而於複數之基板上形成第1光阻膜，從前述 基板處理站而將被形成有前述第1光阻膜之複數的基板連 續地搬送至前述壓印處理站處，並且從前述模版搬入搬出 站來將複數之模版連續地搬送至前述壓印處理站處，在前 述壓印處理站處，係在前述各壓印單元處，而將使用有各 模版之對於各基板的前述特定之光阻圖案的形成並行地來 進行。 在前述基板處理站處，係亦可設爲在基板上塗布塗布 液。 其中，前述壓印系統，係亦可設爲：於前述基板處理 站處具備有密著劑塗布單元，該密著劑塗布單元，係在被 形成有前述第1光阻膜之基板上，塗布將其與前述第2光阻 膜間之密著性提高的密著劑，在第1光阻膜之形成後，具 備有在基板上塗布前述密著劑之工程。 若依據由又一其他觀點所致的本發明，則係提供一種 爲了經由壓印系統來實行前述壓印方法而在對於該壓印系 統進行控制之控制部的電腦上動作之程式。 若依據由另一觀點所致的本發明，則係提供一種儲存 -8- 201212148 有前述程式之可讀取的電腦記憶媒體。 〔發明之效果〕 若依據本發明，則係能夠使用模版，來在基板上適當 且有效率地形成特定之光阻圖案。 【實施方式】 以下’針對本發明之實施形態作說明。圖1，係爲對 於本實施形態之壓印系統1的構成之槪略作展示的平面圖 。圖2以及圖3，係爲對於壓印系統1的構成之槪略作展示 的側面圖。 在本實施形態之壓印系統1中，係使用如圖4中所示一 般之具有直方體形狀並且在表面上被形成有特定之轉印圖 案C的模版T。以下，將被形成有轉印圖案C之模版T的面 稱作表面ΤΊ，並將與該表面T!相反側之面稱作背面τ2。在 模版Τ之表面"^處，係如圖5中所示一般地沿著轉印圖案c 之形狀而被成膜有離模劑S。另外，在模版Τ中，係使用能 夠使可視光、近紫外光、紫外線等之光透過的透明材料， 例如係使用玻璃。又，在離模劑S之材料中，係使用有相 對於後述之晶圓上的第2光阻膜而具備有撥液性之材料， 例如係使用氟素樹脂等。 壓印系統1 ’係如圖1中所示一般，具備有：把將複數 (例如25枚）之作爲基板的晶圓w以卡匣單位來在外部和 壓印系統1之間作搬入搬出，或者是對於晶圓卡匣Cw而將 -9 - 201212148 晶圓W作搬入搬出之作爲基板搬入搬出站的晶圓搬入搬出 站2;和具備有對於晶圓W施加特定之處理之複數的處理 單元之作爲基板處理站的晶圓處理站3;和具備有複數之 使用模版T來在晶圓W上形成特定的光阻圖案之壓印單元 的壓印處理站4 ;和將複數（例如5枚）之模版T以卡匣單 位來在外部和壓印系統1之間進行搬入搬出，或者是對於 模版卡匣CT而將模版T作搬入搬出之複數的模版搬入搬出 站5，作了 一體性連接之構成。 晶圓搬入搬出站2、晶圓處理站3、壓印處理站4，係 依此順序而在Y方向（圖1之左右方向）上作並排配置。複 數之模版搬入搬出站5，係被設置在壓印處理站4內之後述 的複數之壓印單元60的每一者處。 在晶圓搬入搬出站2處，係被設置有卡匣載置台10。 卡匣載置台10，係成爲可自由地將複數之晶圓卡匣CW在X 方向（圖1中之上下方向）上而載置爲一列。亦即是，晶 圓搬入搬出站2，係構成爲能夠保有複數之晶圓W。另外 ，在本實施形態中，於晶圓卡匣Cw內之晶圓W上，係預先 被形成有成爲鈾刻處理之對象的被處理膜（未圖示）。 在晶圓搬入搬出站2處，係被設置有可在延伸於X方向 之搬送路徑Π上移動的晶圓搬送體12。晶圓搬送體12’係 可在水平方向上自由伸縮’並且亦能夠在鉛直方向以及鉛 直周圍（0方向）上自由移動’而能夠在晶圓卡匣cw和晶 圓處理站3之間搬送晶圓W。 在晶圓處理站3處’係於其之中心部處而被設置有搬 -10- 201212148 送單元20。在此搬送單元20之周邊’係被配置有將各種處 理單元作了多段配置之例如4個的處理區塊G1〜G4。在晶 圓處理站3之正面側（圖1之X方向負方向側）’係從晶圓 搬入搬出站2側起而依序被配置有第1處理區塊G1、第2處 理區塊G2。在晶圓處理站3之背面側（圖1之X方向正方向 側），係從晶圓搬入搬出站2側起而依序被配置有第3處理 區塊G3、第4處理區塊G4。在晶圓處理站3之晶圓搬入搬 出站2側處，係被配置有用以進行晶圓W之授受的轉移單 元2 1。在晶圓處理站3之壓印處理站4側，係被配置有用以 進行晶圓W之授受的轉移單元22、和將晶圓W暫時性作保 管之緩衝卡匣23。 搬送單元20，係具備有：保持晶圓W並作搬送並且能 夠在水平方向、鉛直方向以及鉛直周圍自由移動的搬送臂 。而，搬送單元20，係能夠對於被配置在處理區塊G1〜 G4內之後述的各種處理單元、轉移單元21、22以及緩衝卡 匣23而搬送晶圓W。 在第1處理區塊G1處，係如圖2中所示一般，將複數之 液處理單元、例如在晶圓W上塗布作爲塗布液之第1光阻 液的作爲塗布單元之光阻塗布單元30、31，從下方起來依 序重疊爲2段。第2處理區塊G2亦同樣的，係將光阻塗布單 元32、33從下方起而依序重疊爲2段。又，在第1處理區塊 G1以及第2處理區塊G2之最下段處，係分別被設置有用以 對於前述液處理單元供給各種處理液之化學室3 4、3 5。 在第3處理區塊G3處’係如圖3中所示一般，將對於晶 -11 - 201212148 圓W之溫度進行調節的溫度調節單元40、4 1，和對於晶圓 W進行加熱處理的加熱單元42、43，從下方起而依序重疊 成4段。 在第4處理區塊G4，亦係與第3處理區塊G3相同的， 將溫度調節單元50、51，和對於晶圓W進行加熱處理之加 熱單元52、53，從下方起而依序重疊成4段。 在壓印處理站4處，係如圖1中所示一般，被配置有2 列之壓印區塊El、E2。第1壓印區塊E1，係被配置在壓印 處理站4之正面側（圖1之X方向負方向側），第2壓印區塊 E2，係被配置在壓印處理站4之背面側（圖1之X方向正方 向側）。在2列的壓印區塊E 1、E2之間，係被形成有用以 搬送晶圓W之搬送區域E3。 在第1壓印區塊E1處，係於Y方向上而被並排配置有複 數（例如5台）之壓印單元60 »又，在各壓印單元60之搬 送區域側E3處，係被配置有用以進行晶掘W和模版T之授 受的轉移單元61。 在第2壓印區塊E2處，係與第1壓印區塊E1相同的，而 在Y方向上被並排配置有複數（例如5台）之壓印單元60和 轉移單元61。 另外，壓印單元60之數量，係根據在晶圓處理站3處 之處理時間和壓印單元60之處理時間而被設定。亦即是， 在晶圓處理站3處，例如係可在每一小時而對於2 0 0枚之晶 圓W進行晶圓處理。另一方面，在壓印單元6 0處，例如係 可在每一小時而對於20枚之晶圓W進行壓印處理。故而， -12- 201212148 在本實施形態中，係在壓印處理站4處設置有10台的壓印 單元6 0。 在搬送區域E3處，係被設置有保持晶圓w並進行搬送 之晶圓搬送單元70。晶圓搬送單元70，例如係具備有可在 水平方向上自由伸縮並且在鉛直方向以及鉛直周圍（0方 向）上自由移動的搬送臂》晶圓搬送單元70，係在搬送區 域E3內移動，並能夠在晶圓處理站3和轉移單元6 1之間搬 送晶圓W。 模版搬入搬出站5，係在每一壓印單元60處，而被設 置有複數（例如1〇台）。在模版搬入搬出站5處，係被設 置有卡匣載置台80。卡匣載置台80，係成爲能夠自由載置 模版卡匣CT。亦即是，模版搬入搬出站5，係構成爲能夠 保有複數之模版T。 在模版搬入搬出站5處，係被設置有保持模版T並作搬 送之模版搬送體81。模版搬送體81，係可在水平方向上自 由伸縮，並且亦能夠在鉛直方向以及鉛直周圍（0方向） 上自由移動，而能夠在晶圓卡匣CT和後述之轉移單元82之 間搬送模版T。 在模版搬入搬出站5處，係被配置有用以在其與壓印 單元60之間進行模版T之授受的轉移單元82。 接著，針對上述之晶圓處理站3的光阻塗布單元30〜 33之構成作說明。光阻塗布單元30，係如圖6中所示一般 ，具備有在側面被形成有晶圓W之搬入搬出口（未圖示） 的殻體1〇〇。 -13- 201212148 在殻體100之中央部處，係被設置有保持晶圓並使其 旋轉之旋轉吸盤110。旋轉吸盤110，係具備有水平之上面 ，在該上面處，例如係被設置有吸引晶圓W之吸引口（未 圖示）。藉由此吸引口之吸引，而能夠將晶圓W吸附保持 在旋轉吸盤1 10上。 在旋轉吸盤no處，係透過軸111而被設置有旋轉驅動 部1 1 2。藉由此旋轉驅動部1 1 2，旋轉吸盤1 1 0係能夠在鉛 直周圍以特定之速度來旋轉，並且作升降。 在旋轉吸盤110之周圍，係被設置有承接從晶圓w所 飛散或者是落下之液體並作回收的杯113。在杯113之下面 ，係被連接有將回收之液體排出的排出管114、和將杯11 3 內之氛圍作排氣的排氣管Π 5。 如圖7中所示一般，在杯113之X方向負方向（圖7之下 方向）側，係被形成有沿著Y方向（圖7之左右方向）而延 伸的軌道120 »軌道120，例如係從杯1 13之Y方向負方向（ 圖7之左方向）側的外方起而一直被形成至Y方向正方向（ 圖7之右方向）側的外方處爲止。在軌道120處’係被安裝 有臂121。 在臂1 2 1處，係支持有將第1光阻液供給至晶圓W上之 光阻液噴嘴122。臂121 ’係藉由噴嘴驅動部123而可在軌 道120上自由移動。藉由此’光阻液噴嘴122 ’係能夠從被 設置在杯Π3之Y方向正方向側的外方處之待機部124起而 一直移動至杯1 1 3內之晶圓w的中心部上方處爲止’並能 夠進而在該晶圓~上而於晶圓W之直徑方向上移動。又’ -14- 201212148 臂121 ’係能夠經由噴嘴驅動部in而自由升降，並能夠對 於光阻液噴嘴1 22之高度作調節。另外，在本實施形態中 ’於作爲塗布液之第1光阻液中，例如係使用具有碳之光 阻液。又，作爲塗布液，係亦可使用SOG ( Spin On Glass )膜形成用之塗布液。 另外，光阻塗布單元31〜33之構成，由於係與上述之 光阻塗布單元30的構成相同，故省略其說明。 接著，針對上述之晶圓處理站3的加熱單元42、43、 52、53之構成作說明。加熱單元42，係如圖8中所示一般 ，具備有在側面被形成有晶圓W之搬入搬出口（未圖示） 的殼體130。 在殻體130內之底面處，係被設置有載置晶圓W之載 置台131。晶圓W，係以使其之被處理面朝向上方的方式 ，而被載置在載置台131之上面。在載置台131內，係被設 置有從下方來支持晶圓W並使其升降之升降銷132。升降 銷132，係能夠藉由升降驅動部133而上下移動。在載置台 131之上面，係被形成有將該上面於厚度方向而作貫通之 貫通孔134，升降銷132，係成爲插通於貫通孔134中。又 ，在載置台131之上面，係被設置有加熱晶圓W之熱板135 。在熱板135之內部，係被設置有例如藉由供電來發熱之 加熱器，而能夠將熱板135調節爲特定之設定溫度。另外 ，此熱板135，係亦可設置在晶圓W之上方，例如設置在 後述之蓋體140的頂板面處。又，亦可在晶圓W之上方和 下方處設置熱板135。 -15- 201212148 在載置台131之上方，係被設置有可自由上下移動之 蓋體140。蓋體140，其下面係開口，並與載置台131成爲 一體’而形成處理室K。在蓋體140之上面中央部處，係被 設置有排氣部141。處理室K內之氛圍，係從排氣部141而 被均一作排氣。 另外，加熱單元43、52、53之構成，由於係與上述之 加熱單元42的構成相同，故省略其說明。 又’關於溫度調節單元40、41、50、51之構成，亦係 具備有與上述之加熱單元42相同的構成，並代替熱板135 ’而使用溫度調節板。在溫度調節板之內部，例如係被設 置有帕耳帖元件等之冷卻構件，並能夠將溫度調節板調節 爲設定溫度。又，於此情況，亦可將加熱單元42處之蓋體 140省略。 接下來’針對上述之壓印處理站4的壓印單元60之構 成作說明。壓印單元60，係如圖9中所示一般，具備有在 側面被形成有晶圓W之搬入搬出口（未圖示）和模版T之 搬入搬出口（未圖示）的殻體15〇。 在殼體150內之底面處，係被設置有載置晶圓W並作 保持之晶圓保持部1 5 1。晶圓W，係以使其之被處理面朝 向上方的方式，而被載置在晶圓保持部151之上面。在晶 圓保持部151內’係被設置有從下方來支持晶圓W並使其 升降之升降銷152。升降銷〗52，係能夠藉由升降驅動部 153而上下移動。在晶圓保持部151之上面，係'被形成有將 該上面於厚度方向而作貫通之貫通孔154，升降銷152，係 -16- 201212148 成爲插通於貫通孔154中。又，晶圓保持部151 ’係藉由被 設置在該晶圓保持部151之下方處的移動機構155’而能夠 在水平方向上移動並且在鉛直周圍自由旋轉。 如圖10中所示一般，在晶圓保持部151之X方向負方向 (圖10之下方向）側，係被形成有沿著Y方向（圖之左 右方向）而延伸的軌道160。軌道160，例如係從晶圓保持 部151之Y方向負方向（圖10之左方向）側的外方起而一直 被形成至Y方向正方向（圖1〇之右方向）側的外方處爲止 。在軌道16 0處，係被安裝有臂161。 在臂1 6 1處，係支持有將第2光阻液供給至晶圓W上之 光阻液噴嘴1 62。光阻液噴嘴1 62，例如係具備有與晶圓W 之直徑尺寸相同或者是較其更長之沿著X方向的細長形狀 。在光阻液噴嘴162處，例如係使用有噴墨方式之噴嘴， 在光阻液噴嘴162之下部，係被形成有沿著長邊方向而形 成爲一列之複數的供給口（未圖示）。而，光阻液噴嘴 162，係能夠對於第2光阻液之供給時序、第2光阻液之供 給量等作嚴密的控制。 臂161，係藉由噴嘴驅動部163而可在軌道160上自由 移動。藉由此，光阻液噴嘴1 62，係能夠從被設置在晶圓 保持部151之Y方向正方向側的外方處之待機部164起而一 直移動至晶圓保持部151上之晶圓W的上方處爲止，並能 夠進而在該晶圓W之表面上而於晶圓W之直徑方向上移動 。又，臂161，係能夠經由噴嘴驅動部163而自由升降，並 能夠對於光阻液噴嘴162之高度作調整。 -17- 201212148 在身爲殼體150內之頂板面的晶圓保持部151之上方， 係如圖10中所示一般而被設置有將模版T作保持之模版保 持部1 70。亦即是，晶圓保持部1 5 1和模版保持部1 70，係 以使被載置在晶圓保持部1 5 1處之晶圓W和被保持在模版 保持部170處之模版T相對向的方式，而被作配置。又，模 版保持部170，係具備有將模版T之背面T2的外週部作吸附 保持之吸盤171 »吸盤171，係藉由被設置在該吸盤171之 上方的移動機構172，而成爲能夠在鉛直方向上自由移動 並且在鉛直周圍自由旋轉。藉由此，模版Τ，係能夠相對 於晶圓保持部151上之晶圓W而朝特定之方向旋轉並作升 降。 模版保持部170，係具備有被設置在保持於吸盤171處 之模版Τ的上方之光源173。從光源173，係發出有例如可 視光、近紫外光、紫外線等之光，從此光源173而來之光 ，係透過模版Τ而被照射至下方》 另外，在壓印單元60內，係被設置有：在其與轉移單 元61之間而搬送晶圓W之晶圓搬送機構（未圖示）、和在 其與轉移單元82之間而搬送模版Τ之模版搬送機構（未圖 示）。又，模版搬送機構，係構成爲能夠以將模版Τ之表 背面作反轉的方式而自由轉動。 在以上之壓印系統1中，係如圖1中所示一般地而被設 置有控制部200。控制部200，例如係爲電腦，並具備有程 式儲存部（未圖示）。在程式儲存部中，係被儲存有用以 實行在壓印系統1中之晶圓處理、壓印處理等的程式。另 -18- 201212148 外’此程式，例如亦可爲被記錄在電腦可讀取之硬碟（ HD )、軟碟（FD )、光碟（CD )、光磁碟（MO )、記憶 卡等之電腦可讀取的記憶媒體中者，並從該記億媒體來安 裝至控制部200中。 本實施形態之壓印系統1，係如同上述一般地被構成 。接著，針對藉由該壓印系統1所進行之.晶圓處理、壓印 處理等作說明。圖1 1，係對於此晶圓處理和壓印處理之主 要的處理流程作展示，圖1 2，係對於各工程中之晶圓W和 模版T的狀態作展示》 首先，在模版搬入搬出站5處，係經由模版搬送體8 1 ，而將模版T從卡匣載置台80上之模版卡匣CT取出，並搬 送至轉移單元82處。另外，模版卡匣CT內之模版T，係以 使被形成有轉印圖案C之表面T,朝向上方的方式而被收容 〇 之後，經由壓印單元60內之模版搬送機構，模版T係 被搬送至壓印單元60內（圖11之工程A1)。此時，經由模 版搬送機構，模版T之表背面係被作反轉。亦即是，模版T 之背面T2係被朝向上方。被搬入至壓印單元60中之模版T ，係被吸附保持在模版保持部170之吸盤171處。另外，在 本實施形態中，藉由將模版Τ搬送至各壓印單元60處，係 成爲從複數之模版搬入搬出站5來將複數之模版Τ連續性地 搬送至壓印處理站4。 如此這般，在從模版搬入搬出站5所對於壓印單元60 之模版Τ的搬送中’於晶圓搬入搬出站2’係藉由晶圓搬送 -19- 201212148 體12，而從卡匣載置台10上之模版卡匣Cw來將晶圓W取出 ，並搬送至晶圓處理站3之轉移單元21處（圖11之工程A2 )。另外，晶圓卡匣Cw內之晶圓W，係以使其之被處理面 朝向上方的方式而被作收容。 之後，經由搬送單元20，而將晶圓W搬送至光阻塗布 單元30處，並遞交至旋轉吸盤110處。接著，使光阻液噴 嘴122 —直移動至晶圓W之中心部上方，並且使晶圓W旋轉 。而後，將第1光阻液供給至旋轉中之晶圓W上，並藉由 離心力來使第1光阻液在晶圓W上擴散，而將第1光阻液塗 布在晶圓W之表面全面上（圖11之工程A3)。 之後，經由搬送單元20，而將晶圓W搬送至加熱單元 42處。被搬入至加熱單元42處之晶圓W，係被遞交至升降 銷132處，並被載置於載置台131上。接著，將蓋體140關 閉，晶圓W係經由熱板135而被加熱至例如20(TC。在經過 特定時間後，晶圓W上之第1光阻液係被燒成，如圖1 2 ( a )中所示一般，在晶圓W上係被形成有第1光阻膜t (圖 Π之工程A4 )。另外，第1光阻膜R:，例如係被形成爲 1 Onm之膜厚。 之後，經由搬送單元20，晶圓W係被搬送至溫度調節 單元40處，而晶圓W係被調節爲特定之溫度（例如常溫） 〇 之後，經由搬送單元20，而將晶圓W搬送至轉移單元 22處。接著，經由晶圓搬送單元70，晶圓W係被搬送至壓 印處理站4處》於此，係反覆進行上述之工程A2〜A4，而 -20- 201212148 在複數之晶圓W上形成第1光阻膜R!，且將複數之晶圓W連 續性地搬送至壓印處理站4處。此時，在將晶圓W搬送至 壓印處理站4處之前，亦可在緩衝卡匣23中，將被形成有 第1光阻膜R!之晶圓W作暫時性的保管。 之後，經由晶圓搬送單元70，而將晶圓W搬送至轉移 單元61處。接著，經由壓印單元60內之晶圓搬送機構，晶 圓W係被搬送至壓印單元60內（圖11之工程A5)。 被搬入至壓印單元60處之晶圓W，係被遞交至升降銷 15 2處，並被載置於晶圓保持部151上而被作保持。接著， 使被保持在晶圓保持部151上之晶圓W移動至水平方向之 特定位置處而作定位，之後，使光阻液噴嘴1 62在晶圓W 之直徑方向上移動，並如圖12(b)中所示一般地在晶圓 W上塗布第2光阻液，而形成第2光阻膜R2 (圖12之工程A6 )。此時，藉由控制部200，而對於從光阻液噴嘴162所供 給而來之第2光阻液的供給時序或供給量等作控制。亦即 是，在被形成於晶圓W上之光阻圖案處，以被塗布在與凸 部相對應之部分（模版T之轉印圖案C處的與凹部相對應之 部分）上的第2光阻液之量係爲多，而被塗布在與凹部相 對應之部分（轉印圖案C處的與凸部相對應之部分）上的 第2光阻液之量係爲少的方式，來作控制。如此這般，因 應於轉印圖案C之開口率，在晶圓W上係被塗布有第2光阻 液。另外，第2光阻膜R2，例如係被形成爲50nm之膜厚。 若是在晶圓W上被形成有第2光阻膜R2，則若是使被 保持在晶圓保持部151上之晶圓W移動至水平方向之特定 -21 - 201212148 的位置處而進行對位’則係將被保持在模版保持部1 7 〇處 之模版Τ旋轉至特定之方向。而後，如圖12(b)之箭頭所 示一般’使模版Τ下降至晶圓W側。模版Τ係一直下降至特 定之位置處，模版Τ之表面！^係被推壓至晶圓W上之第2光 阻膜R 2上。另外，此特定之位置，係根據被形成在晶圓W 上之光阻圖案的高度而被作設定。接著，從光源173而照 射光。從光源1 7 3而來之光，係如圖1 2 ( c )中所示一般地 透過模版Τ而照射至晶圓W上之第2光阻膜112處，藉由此， 第2光阻膜R2係進行光重合。如此這般，在晶圓W上之第2 光阻膜R2處，係被轉印有模版T之轉印圖案C，並被形成有 光阻圖案P (圖1 1之工程A7 )。 之後，如圖12(d)中所示一般，使模版T上升，並在 晶圓W上形成光阻圖案P。此時，在模版T之表面m上由於 係被塗布有離模劑S，因此，係並不會有晶圓W上之光阻 附著於模版T之表面Ti上的情況。之後，晶圓W係經由升 降銷152而被遞交至晶圓搬送機構處，並從壓印單元60而 被搬出，且被搬送至轉移單元61處（圖11之工程A8)。之 後，晶圓W，係經由晶圓搬送單元70而被搬送至晶圓處理 站3處，之後經由晶圓搬送體12而被送回至晶圓卡匣Cw處 。另外，在被形成於晶圓W上之光阻圖案P的凹部處’係 會有殘留薄的光阻之殘存膜L的情況，但是’例如亦可在 壓印系統1之外部’而如圖1 2 ( e )中所示一般地將該殘存 膜L除去。 反覆進行以上之工程A5〜A8’使用1個的模版Τ’而 -22- 201212148 在複數之晶圓w上分別形成光阻圖案P。之後，若是對於 特定枚數之晶圓W而進行了工程A5〜A8，則係對於模版T 作交換。亦即是，在經由模版搬送機構而使模版T之表背 面被作了反轉後，模版T係被從壓印單元60而搬出，並被 搬送至轉移單元82處（圖11之工程A9)。之後，模版T， 係經由模版搬送體81而被送回至模版卡匣CT處。 另外，對模版T作交換之時機等，係對於模版T之劣化 等作考慮而設定。又，當在晶圓W處形成相異之圖案P的 情況時，亦係對於模版T作交換。例如，亦可設爲在每將 模版T作了 1次使用時便對該模版τ作交換。又，例如亦可 對於每一枚之晶圓W而將模版T作交換，例如亦可對於每 —批次而將模版T作交換。 如此這般，在壓印系統1中，係一面連續性地對於模 版T作交換，一面對於複數之晶圓w而連續性地形成特定 之光阻圖案P。 若依據以上之實施形態，則在壓印系統1中，係如圖 12(e)中所示一般地而在晶圓W上形成第1光阻膜I和第2 光阻膜R2之光阻圖案P。之後，在壓印系統1之外部的蝕刻 處理單元（未圖示）處，將第2光阻膜R2之光阻圖案P作爲 遮罩’而對於第1光阻膜1進行蝕刻處理並形成光阻圖案 。如此一來’此些之第1光阻膜心的光阻圖案和第2光阻膜 R2的光阻圖案P係成爲一體化，並發揮充分之耐蝕刻功能 。故而’係能夠對於晶圓W上之被處理膜適當地進行蝕刻 處理’並適當的形成該被處理膜之圖案。 -23- 201212148 又，若依據上述之實施形態，則對於1個的晶圓處理 站3，在壓印處理站4處，係被配置有複數之壓印單元60。 因此，係能夠藉由晶圓處理站3來在複數之晶圓W上形成 第1光阻膜I，並從該晶圓處理站3來將被形成有第1光阻 膜h之複數的晶圓W連續搬送至壓印處理站4處。又，由 於在各壓印單元60處，係被連接有模版搬入搬出站5，因 此，係能夠從模版搬入搬出站5來將複數之模版T連續搬送 至壓印處理站4處》而後，在壓印處理站4，係能夠使用各 模版T在各壓印單元60處並行地進行對於各晶圓W之壓印 處理。因此，就算是當在基板處理站3處之處理時間和在 壓印單元60處之處理時間有所差異的情況時，亦能夠並不 使在基板處理站3處之晶圓處理停止地來連續地對於晶圓 W進行適當之處理。故而，係能夠適當且有效率地在晶圓 W上形成特定之光阻圖案P。又，經由此，係亦成爲能夠 實現半導體裝置之量產化。 又，在晶圓處理站3處，係於光阻塗布單元30處而將 第1光阻液塗布在晶圓W上，之後於加熱單元42處而將晶 圓W上之第1光阻液作燒成。故而，係能夠適當地在晶圓W 上形成第1光阻膜R丨》 在上述之實施形態的壓印系統1中，雖係成爲在各壓 印單元60處而設置有複數之模版搬入搬出站5，但是，亦 可如圖13〜圖15中所示一般，而設置1個的模版搬入搬出 站300。模版搬入搬出站300，係被與壓印處理站4作連接 。而’晶圓搬入搬出站2、晶圓處理站3、壓印處理站4， -24- 201212148 模版搬入搬出站300，係依此順序而在Y方向（圖13之左右 方向）上作並排配置。 在模版搬入搬出站3 00處，係被設置有卡匣載置台310 。卡匣載置台310，係成爲可自由地將複數之模版卡匣Ct 在X方向（圖1中之上下方向）上而載置爲一列。亦即是， 模版搬入搬出站3 00，係構成爲能夠保有複數之模版T。 在模版搬入搬出站300處，係被設置有可在延伸於X方 向之搬送路徑311上移動的晶圓搬送體312。模版搬送體 312，係可在水平方向上自由伸縮，並且亦能夠在鉛直方 向以及鉛直周圍（0方向）上自由移動，而能夠在晶圓卡 匣CT和後述之轉移單元320或者是緩衝卡匣321之間搬送模 版T。 在模版搬入搬出站300處，係被配置有用以在其自身 與壓印處理站4之間而進行模版T之授受的轉移單元320、 和用以將模版T作暫時性保管的緩衝卡匣321。另外，緩衝 卡匣321，係亦可因應於需要而作省略。 又，在壓印處理站4之搬送區域E3處，係除了晶圓搬 送單元70以外，亦被設置有保持模版T並進行搬送之模版 搬送單元3 30。晶圓搬送單元70和模版搬送單元3 3 0，係以 不會相互干涉的方式而被作配置。 模版搬送單元330，例如係具備有可在水平方向上自 由伸縮並且在鉛直方向以及鉛直周圍（0方向）上自由移 動的搬送臂。模版搬送單元330，係在搬送區域E3內移動 ，並能夠在模版搬入搬出站3 00和轉移單元61之間搬送模 -25- 201212148 版τ » 另外，壓印系統1之其他構成，由於係與前述實施形 態之壓印系統1的構成相同，故省略說明。 於此種情況，當從模版搬入搬出站3 00而將模版Τ搬送 至壓印單元60處時，首先，係在模版搬入搬出站300處， 經由模版搬送體312來將模版Τ從卡匣載置台310上之模版 卡匣CT取出，並搬送至轉移單元3 20處。 之後，經由模版搬送單元330，而將模版T搬送至轉移 單元61處。接著，經由壓印單元60內之模版搬送機構，模 版T係被搬送至壓印單元60內（圖11之工程A1)。另外， 從模版搬入搬出站3 0 0起而至壓印處理站4，複數之模版T 係被連續性地作搬送。 另外，在壓印系統1中之晶圓處理和壓印處理的其他 工程，由於係與上述之工程A2〜A9相同，故省略其說明 〇 若依據本實施形態，則由於係藉由1個的模版搬入搬 出站3 00來進行模版T之搬入搬出，因此，係能夠將壓印系 統1之裝置構成簡略化，並且能夠將壓印系統1之占有面積 縮小。因此，係能夠將壓印系統1之製造成本低廉化。 又，例如亦可將被收容在1個的模版卡厘CT中之複數 的模版T搬入至相異之壓印單元60處，或者是亦可將從相 異之壓印單元60所搬出的模版T收容在1個的模版卡匣CT中 。故而，若依據本實施形態，則係能夠將壓印系統1中之 模版T的搬送以及壓印處理之自由度增大》 -26- 201212148 在上述之實施形態中，如同在圖11之流程中亦有所展 示一般，當在晶圓w上形成了第1光阻膜R!之後，係將晶 圓W搬送至壓印處理站4處，而後，形成第2光阻膜R2。 然而，在使模版T與第2光阻膜R2做接觸並將轉印圖案 C作轉印時，就算是在模版T之表面上成膜有離模劑S，亦 無法否定仍會有第2光阻膜R2附著在模版T側的可能性。有 鑑於此種情況，較理想，係在第2光阻膜R2之形成前，預 先進行將第2光阻膜R2之對於晶圓W側的密著性、定著性 提昇的處理。 例如，當第2光阻膜R2之材料爲例如UV硬化性樹脂的 情況時，較理想，係在第1光阻膜R,之表面上，預先塗布 並成膜使其與該UV硬化性樹脂間的密著性提昇的矽烷耦 合劑等之密著劑。此種塗布處理，若是對於圖11之流程而 言，則例如若是在將第1光阻液作了燒成後（工程A4之後 )來進行，則爲理想。 而，在塗布此種密著劑時，係可使用具備有和在進行 形成第1光阻膜I之第1光阻液的塗布時之如圖6中所示一 般的塗布單元30〜33相同構成之塗布裝置。而，在如此這 般地塗布了密著劑之後，只要因應於必要而加熱晶圓W， 並進而因應於必要而將其冷卻，之後，搬入至壓印單元60 中’之後’與圖1 1中所示之流程相同的，來實施第2光阻 膜R2之形成處理（工程A6 )即可。 又’當如此這般地在第1光阻膜L之表面上成膜密著 劑時，亦可並非使用前述之塗布單元30—般的將液體作塗 •27- 201212148 布之裝置，而設爲將密著劑之蒸氣供給至晶圓W表面並進 行成膜。 圖1 6，係對於此時所使用之作爲密著劑的塗布單元之 成膜單元250的構成作槪略展示。此成膜單元250，例如係 代替塗布單元30〜33之一部分，而被搭載在基板處理站3 處。 成膜單元250，係如圖16中所示一般，具備有載置晶 圓W之載置台260、和被設置在該載置台260之上方的蓋體 261。蓋體261，例如係經由升降機構（未圖示）而構成爲 可在鉛直方向上自由移動。又，蓋體261之下面係開口。 而後，蓋體261和載置台260係成爲一體，並成爲能夠形成 密閉了的處理空間K。 在載置台260處，係以使晶圓W之表面（例如第1光阻 膜Ri之形成面）朝向上方的方式，來載置該晶圓W。在載 置台260之上面，係被設置有對於晶圓W之溫度作控制的 溫度控制板270 »溫度控制板270，例如係內藏有帕耳帖元 件等，並能夠將晶圓W調節爲特定之溫度。在載置台260 內’係被設置有從下方來支持晶圓W並使其升降之升降銷 271。升降銷271，係能夠藉由升降驅動部2 72而上下移動 。在載置台260之上面，係被形成有將該上面於厚度方向 而作貫通之貫通孔273，升降銷271，係成爲插通於貫通孔 273 中。 又，在蓋體261之頂板面處，係被設置有將密著劑之 蒸氣和水蒸氣供給至晶圓W上之氣體供給管290。在氣體 -28- 201212148 供給管2 9 0處’係被連接有供給密著劑之蒸氣的密著劑供 給源2 9 1、和供給水蒸氣的水蒸氣供給源2 9 2。又，在氣體 供給管290處’係被設置有供給機器群293，其係包含有對 於從密著劑供給源2 9 1所供給而來之密著劑的蒸氣和從水 蒸氣供給源2 9 2所供給而來之水蒸氣的流動作控制之閥或 者是流量調節部等。 密著劑供給源29 1，係於內部儲存有液體狀之密著劑 。又’在密著劑供給源29 1處，係被連接有將氮氣供給至 該密著劑供給源29 1內的氣體供給管（未圖示）。在密著 劑供給源29 1中，係藉由將氮氣供給至內部—事，來使液 體狀之密著劑氣化，並產生密著劑之蒸氣。此密著劑之蒸 氣’係將前述氮氣作爲載體氣體而被供給至氣體供給管 290 中。 水蒸氣供給源292，例如係於內部儲存有水》而後， 例如係將此水加熱並使其氣化，而產生水蒸氣。 在蓋體261之側面，係被連接有將處理空間Κ之氛圍作 排氣的排氣管294。在排氣管294處，係被連接有將處理空 間Κ之氛圍作真空抽氣的排氣幫浦295。 爲了使用具備此種構成之成膜單元2 5 0來在第1光阻膜 R!之表面上成膜密著劑，例如係在圖1 1中所示之工程Α4之 後，將晶圓W搬送至塗布單元250處。被作了搬送之晶圓W ，係被遞交至升降銷271處，並被載置於載置台260上。此 時，載置台260上之晶圓W，係經由溫度控制板270而被溫 度調節爲特定之溫度（例如50°C )。接著，使蓋體261下 -29- 201212148 降，並藉由該蓋體261和載置台260而形成密閉了的處理空 間K »之後，將密著劑之蒸氣從氣體供給管290而供給至處 理空間K中。所供給了的密著劑之蒸氣，係堆積在晶圓W 之表面上。之後，將水蒸氣從氣體供給管290而供給至處 理空間K中，該水蒸氣係被供給至堆積在晶圓w上的密著 劑處。 若是被供給有水蒸氣，則堆積在晶圓W上之密著劑的 分子係被加水分解，並進而藉由脫水縮合來使密著劑分子 和晶圓W之表面結合。藉由此，被形成在晶圓W上之第1光 阻膜R!、和被形成於其之上的第2光阻膜R2，其兩者間之 密著性係提昇。另外，在將密著劑成膜於晶圓W上之後， 亦可將處理空間K之氛圍置換爲惰性氣體，例如置換爲氮 氣。 若依據此種供給密著劑之蒸氣並在晶圓W上成膜密著 劑的方式，則相較於塗布液體之密著劑而進行成膜的情況 ，係並不需要進行洗淨，並且係能夠更加均一地成膜。 另外，在上述之例中，載置台260上之晶圓W，係經 由溫度控制板270而被溫度調節爲特定之溫度（例如50°C )，但是，並非一定需要將晶圓W溫度調整爲此種較常溫 而更高溫之溫度，亦可在常溫（例如2(TC〜25°C )的狀態 下來直接進行成膜。 又，在上述之例中，雖係設爲積極地供給水蒸氣以促 進加水分解，但是，就算是並不如此這般地積極供給水蒸 氣，經由周圍之氛圍中的水份，亦會進行加水分解，而實 -30- 201212148 現前述之由脫水縮合所導致的結合反應。 另外，在第1光阻膜1^之塗布時，亦可設爲將光阻液 之蒸氣供給至晶圓W上，並在晶圓W上形成第1光阻膜Ri。 於此情況，第1光阻膜R!，較理想，係具備有如同前述一 般之提高密著性的效果》 在上述實施形態之壓印系統1中，各處理單元之構成 ，係並不被限定於前述實施形態，只要是能夠進行各處理 之構成，則係可採用各種的構成。 以上，雖係參考添附圖面並針對本發明之合適實施形 態作了說明，但是，本發明係並不被限定於此。只要是同 業者，則應可了解到，在申請專利範圍所記載之思想的範 疇內，係可想到各種之變更例或者是修正例，而，該些當 然亦屬於本發明之技術性範圍內。本發明，係並不被限定 於此例’而可採用各種之形態。本發明，就算是在基板爲 晶圓以外之FPD (平面面板顯示器）、光罩用之遮罩標板 (reticle)等之其他基板的情況時，亦可作適用^ 【圖式簡單說明】 〔圖1〕對於本實施形態之壓印系統的構成之槪略作 展示的平面圖。 〔圖2〕對於本實施形態之壓印系統的構成之槪略作 展示的側面圖。 〔圖3〕對於本實施形態之壓印系統的構成之槪略作 展示的側面圖。 -31 - 201212148 〔圖4〕模版之立體圖。 〔圖5〕模版之側面圖。 〔圖6〕對於光阻塗布單元之構成的槪略作展示之縱 剖面圖。 〔圖7〕對於光阻塗布單元之構成的槪略作展示之橫 剖面圖。 〔圖8〕對於加熱單元之構成的槪略作展示之縱剖面 圖。 〔圖9〕對於壓印單元之構成的槪略作展示之縱剖面 圖。 〔圖1 〇〕對於壓印單元之構成的槪略作展示之橫剖面 圖。 〔圖1 1〕對於晶圓處理和壓印處理之各工程作展示的 流程圖。 〔圖12〕係爲對於在晶圓處理和壓印處理之各工程中 的晶圓和模版之狀態作模式性展示的說明圖，（a )係爲 對於在晶圓上被形成有第1光阻膜的模樣作展示，（b )係 爲對於在晶圓上被形成有第2光阻膜之模樣作展示，（c ) 係爲對於使晶圓上之第2光阻膜作了光重合的模樣作展示 ，（d )係爲對於在晶圓上被形成有光阻圖案之模樣作展 示，（e )係爲對於將晶圓上之殘存膜作了除去的模樣作 展示。 〔圖1 3〕對於其他實施形態之壓印系統的構成之槪略 作展示的平面圖。 -32- 201212148 〔圖1 4〕對於其他實施形態之壓印系統的構成之槪略 作展示的側面圖。 〔圖1 5〕對於其他實施形態之壓印系統的構成之槪略 作展示的側面圖》 〔圖1 6〕對於密著劑之成膜單元之構成的槪略作展示 之縱剖面圖。 【主要元件符號說明】 1 :壓印系統 2 :晶圓搬入搬出站 3 -晶圓處理站 4 :壓印處理站 5 :模版搬入搬出站 30〜33:光阻塗布單元 42、43、52、53:加熱單元 60 :壓印單元 2 0 〇 :控制部 25 0 :成膜單元 3〇〇 :模版搬入搬出站 El、E2 :壓印區塊 E3 :搬送區域 C :轉印圖案 P :光阻圖案 :第1光阻膜 -33- 201212148 R2 :第2光阻膜 S :離模劑 T :模版 W :晶圓 -34-201212148 VI. Description of the invention: [Technical field to which the invention pertains] The present invention relates to: use. An embossing system in which a stencil of a transfer pattern is formed on a surface to form a specific photoresist pattern on a substrate, an embossing method using the embossing system, a program, and a computer memory medium. [Prior Art] For example, in the manufacturing process of a semiconductor device, for example, a photolithography process is performed on a semiconductor wafer (hereinafter referred to as a "wafer"), and a process of forming a specific photoresist pattern on the wafer is performed. . Then, this photoresist pattern is used as a mask to perform etching treatment on the film to be processed on the wafer, and then a photoresist film removal process or the like is performed to form a pattern of a specific film to be processed. When the above-described photoresist pattern is formed, in order to further increase the integration of the semiconductor device, it is required to miniaturize the photoresist pattern. In general, the limit of the miniaturization in the photolithography process is about the wavelength of the light used in the exposure process. Therefore, from the prior art, the research on the short-wavelength of the exposure process light is increasingly carried out. . However, the short wavelength of the exposure light source is limited in terms of technicality and cost. If the method of increasing the short wavelength of light is used, there is a fine resist pattern such as in the formation of a nanometer scale. There will be difficulties in the situation. Therefore, in recent years, instead of performing photolithography on a wafer, there has been proposed a method of forming a fine photoresist pattern on a wafer using a so-called method called imprinting. In this method, a stencil having a fine pattern 201212148 on the surface (also referred to as a phantom or a mold) is pressed against the surface of the photoresist film formed on the wafer, and then peeled off. On the surface of the photoresist film, transfer of the pattern is directly performed (Patent Document 1). (Prior Art Document) [Patent Document 1] [Patent Document 1] JP-A-2009-43 998 SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] However, in the current situation, specific nuances are formed on the surface of the stencil. The pattern is technically difficult. That is, it is difficult to form a pattern having a deep groove with a local aspect ratio on the stencil. If the stencil is used to perform the above embossing, A photoresist pattern having a thin film thickness is formed on the wafer. In this case, when the etching process of the film to be processed on the wafer is performed later, the photoresist pattern cannot exhibit sufficient etching resistance and cannot be appropriately formed. The pattern of the film to be treated. Therefore, it is considered that: before performing the above-described imprint process, another photoresist film is formed on the film to be processed in advance on the wafer. In this case, the imprint process is performed. The photoresist pattern formed by the thing is used as a mask to etch other photoresist films to form other photoresist patterns. Thus, the two photoresist patterns of the 孽It is integrated and exhibits sufficient etching resistance', and the pattern of the film to be processed can be appropriately formed. However, in the formation process and imprint process of other photoresist films, the processing required at each wafer is required. The time is different. Other photoresists 04 201212148 are formed by, for example, applying a coating liquid onto a wafer and then firing the coating liquid. In this case, a crystal is formed. The processing time required for the circle is short. In the current device, for example, it is possible to perform other photoresist film formation processes on 200 wafers per hour. On the other hand, in the imprint process, Forming a photoresist film on the wafer, and then performing pattern transfer on the stencil of the photoresist film a plurality of times (for example, 100 times). Therefore, the processing time required at one wafer is long, In the current state of the art, for example, the imprinting process for 20 wafers per hour is the limit. If the processing is performed in such a manner that the processing time is different from each other in continuity, the imprinting process is performed. Medium It is necessary to stop the formation process of other photoresist films. Therefore, it is difficult to form a specific photoresist pattern continuously with good efficiency for a plurality of wafers, and it is difficult to be combined with a semiconductor device. The present invention has been made in view of the above, and it is an object of the invention to form a specific photoresist pattern on a substrate by using a stencil appropriately and efficiently. Means for Solving the Problems] In order to achieve the above object, the present invention is an imprint system which is an imprint system for forming a specific photoresist pattern on a substrate by using a stencil on which a transfer pattern is formed. A substrate processing station is provided with a first photoresist film formed on a substrate, and an imprint processing station is provided with a plurality of imprinting units and is connected to the substrate processing station. 201212148. The imprinting unit is configured to form a second photoresist film on a substrate on which the first photoresist film is formed, and transfer the transfer pattern onto the second photoresist film. The second a specific photoresist pattern is formed on the photoresist film; and the substrate loading/unloading station is connected to the substrate processing station, and the substrate is carried in and out of the substrate processing station: and the template loading/unloading station is The imprint processing station is connected, and the stencil is carried in and out of the imprint processing station. According to the present invention, a plurality of substrate processing stations are disposed at the imprint processing station for forming a second photoresist film and forming a specific photoresist pattern (hereinafter, also referred to as " Imprint unit for the case of imprint processing. Therefore, the first photoresist film can be formed on the plurality of substrates by the substrate processing station, and the plurality of substrates on which the first photoresist film is formed can be continuously transferred from the substrate processing station to the imprint processing station. . Further, since the stencil loading/unloading station is connected to the embossing station, the stencil can be continuously transported to the imprinting station from the stencil. Then, at the imprint processing station, the imprint process for each substrate can be performed in parallel at each imprinting unit using the respective stencils. Therefore, even when the processing time at the substrate processing station and the processing time at the imprinting unit are different, the substrate can be continuously continued without stopping the processing of the substrate at the substrate processing station. Properly handle it. Therefore, it is possible to form a specific photoresist pattern on the substrate appropriately and efficiently. The substrate processing station may further include a coating unit that applies a coating liquid on the substrate, and a heating unit that burns the applied coating liquid -6-201212148. The coating unit may be formed as described above. 1 The vapor of the liquid of the photoresist film is supplied to the substrate. In the embossing processing station, it is also possible to: emboss a block in which two columns of the plurality of embossing units are arranged side by side in the horizontal direction, and in the embossing area of the two columns Between the blocks, a transfer region for transporting the substrate to each of the above-described imprinting units is formed. The stencil loading/unloading station may be provided in a plurality of each of the embossing units. Further, in the transfer region, the stencil may be transported to each of the embossing units. The substrate processing station may further include an adhesive application unit having an adhesive which is applied to the substrate on which the first resist film is formed and which is adhered to the second resist film. . The adhesive applying unit may be one in which the vapor of the adhesive is supplied to the substrate on which the first resist film is formed. The adhesive application unit may have a function of supplying water vapor to the substrate. The present invention derived from other viewpoints is an imprint method in which an embossing system uses a stencil on which a transfer pattern is formed on a substrate. An imprint method in which a specific photoresist pattern is characterized in that: the imprint system includes a substrate processing station that forms a first photoresist film on a substrate; and an imprint processing station that is configured with a plurality of imprinting units connected to the substrate processing station, wherein the imprinting units are 201212148 to form a second photoresist film on the substrate on which the first photoresist film is formed, and transfer the transfer a pattern is transferred onto the second photoresist film, and a specific photoresist pattern is formed on the second photoresist film; and the substrate loading/unloading station is connected to the substrate processing station, and the substrate is The substrate processing station carries in and out; and the stencil loading/unloading station is connected to the imprint processing station, and the stencil is carried in and out to the imprint processing station, and is applied to the substrate at the substrate processing station. A first photoresist film is formed, and a plurality of substrates on which the first photoresist film is formed are continuously transferred from the substrate processing station to the imprint processing station, and a plurality of templates are loaded from the template. even And continuously transported to the imprint processing station, at the imprint processing station, at each of the imprinting units, and the formation of the specific photoresist pattern for each substrate using each template is performed in parallel get on. At the substrate processing station, a coating liquid may be applied to the substrate. In the above-described imprinting system, the substrate processing station may be provided with an adhesive application unit that is coated on the substrate on which the first resist film is formed. The adhesive which improves the adhesion between the second resist film and the second resist film is provided after the first resist film is formed, and the adhesive is applied to the substrate. According to the present invention, which is based on still another aspect, there is provided a program for operating on a computer of a control unit for controlling the imprint system in order to carry out the imprint method via an imprint system. According to the present invention, which is based on another aspect, a readable computer memory medium having the aforementioned program is stored -8-201212148. [Effects of the Invention] According to the present invention, it is possible to form a specific photoresist pattern appropriately and efficiently on a substrate by using a stencil. [Embodiment] Hereinafter, embodiments of the present invention will be described. Fig. 1 is a plan view showing a schematic configuration of the imprint system 1 of the present embodiment. 2 and 3 are side views showing a schematic configuration of the imprint system 1. In the imprint system 1 of the present embodiment, a stencil T having a rectangular parallelepiped shape as shown in Fig. 4 and having a specific transfer pattern C formed on the surface is used. Hereinafter, the surface on which the stencil T of the transfer pattern C is formed is referred to as a surface ΤΊ, and the surface on the opposite side to the surface T! is referred to as a back surface τ2. At the surface of the stencil, the release agent S is formed along the shape of the transfer pattern c as shown in Fig. 5 as a whole. Further, in the stencil, a transparent material capable of transmitting light such as visible light, near-ultraviolet light, or ultraviolet ray is used, and for example, glass is used. Further, in the material of the release agent S, a material having liquid repellency is provided for the second resist film on the wafer to be described later, and for example, a fluorine resin or the like is used. As shown in FIG. 1, the imprinting system 1' is generally provided with a plurality of (for example, 25) wafers w as substrates to be carried in and out between the outside and the imprinting system 1 in units of cassettes. Or a wafer loading/unloading station 2 as a substrate loading/unloading station for loading and unloading -9 - 201212148 wafer W with a wafer cassette Cw; and a processing unit having a plurality of processing for applying specific processing to the wafer W a wafer processing station 3 as a substrate processing station; and an imprint processing station 4 having a plurality of imprinting units using a stencil T to form a specific photoresist pattern on the wafer W; and a plurality (for example, 5 pieces) The stencil T is carried in and out between the outside and the embossing system 1 in a cassette unit, or is integrally connected to the stencil loading/unloading station 5 for loading and unloading the stencil T for the stencil cassette CT. The composition. The wafer loading/unloading station 2, the wafer processing station 3, and the imprint processing station 4 are arranged side by side in the Y direction (the horizontal direction in Fig. 1) in this order. The plurality of stencil loading/unloading stations 5 are provided at each of the plurality of embossing units 60 described later in the embossing processing station 4. At the wafer loading/unloading station 2, a cassette mounting table 10 is provided. The cassette mounting table 10 is capable of freely placing a plurality of wafer cassettes CW in a row in the X direction (upward and downward directions in FIG. 1). That is, the wafer loading/unloading station 2 is configured to be able to hold a plurality of wafers W. Further, in the present embodiment, a processed film (not shown) to be subjected to uranium engraving processing is formed in advance on the wafer W in the wafer cassette Cw. At the wafer loading/unloading station 2, a wafer transporting body 12 that can move on a transport path 延伸 extending in the X direction is provided. The wafer transfer body 12' is freely expandable in the horizontal direction and is also freely movable in the vertical direction and the vertical direction (0 direction) to transfer crystal between the wafer cassette cw and the wafer processing station 3. Round W. At the center of the wafer processing station 3, it is provided with a transport unit 20 - 201212148. In the vicinity of the transport unit 20, for example, four processing blocks G1 to G4 in which various processing units are arranged in multiple stages are disposed. The first processing block G1 and the second processing block G2 are sequentially disposed from the side of the wafer loading/unloading station 2 on the front side (the negative side in the X direction of Fig. 1) of the wafer processing station 3. In the back side of the wafer processing station 3 (the positive side in the X direction of Fig. 1), the third processing block G3 and the fourth processing block G4 are sequentially arranged from the wafer loading/unloading station 2 side. At the wafer loading/unloading station 2 side of the wafer processing station 3, a transfer unit 21 for carrying out the transfer of the wafer W is disposed. On the side of the imprint processing station 4 of the wafer processing station 3, a transfer unit 22 for transferring and receiving the wafer W and a buffer card 23 for temporarily holding the wafer W are disposed. The transport unit 20 is provided with a transport arm that can hold the wafer W and transport it, and can move freely in the horizontal direction, the vertical direction, and the vertical direction. Further, the transport unit 20 can transport the wafer W to the various processing units, transfer units 21 and 22, and the buffer card 23 which will be described later in the processing blocks G1 to G4. In the first processing block G1, as shown in FIG. 2, a plurality of liquid processing units, for example, a photoresist coating unit as a coating unit for coating a first photoresist liquid as a coating liquid on a wafer W is applied. 30, 31, from the bottom up to overlap in two paragraphs. Similarly to the second processing block G2, the photoresist coating units 32 and 33 are sequentially stacked in two stages from the bottom. Further, at the lowermost stage of the first processing block G1 and the second processing block G2, chemical chambers 34 and 35 for supplying various processing liquids to the liquid processing unit are provided. At the third processing block G3, as shown in FIG. 3, the temperature adjusting units 40, 411 for adjusting the temperature of the crystal-11 - 201212148 circle W and the heating for the wafer W are heated. The units 42, 43 are sequentially superimposed into four segments from the bottom. In the fourth processing block G4, also in the same manner as the third processing block G3, the temperature adjusting units 50, 51 and the heating units 52, 53 for heat-treating the wafer W are sequentially superposed from below. Into 4 paragraphs. At the imprint processing station 4, as shown in Fig. 1, generally, two rows of embossed blocks El, E2 are arranged. The first embossed block E1 is disposed on the front side of the imprint processing station 4 (the negative side in the X direction of FIG. 1), and the second embossed block E2 is disposed on the back side of the imprint processing station 4. Side (the positive side of the X direction in Figure 1). A transfer area E3 for transporting the wafer W is formed between the embossed blocks E1 and E2 of the two rows. In the first embossed block E1, a plurality of (for example, five) embossing units 60 are arranged side by side in the Y direction, and are disposed at the transport area side E3 of each embossing unit 60. There is a transfer unit 61 for performing the excavation of the crystal excavation W and the stencil T. The second embossed block E2 is the same as the first embossed block E1, and a plurality (for example, five) of the embossing unit 60 and the transfer unit 61 are arranged side by side in the Y direction. Further, the number of imprinting units 60 is set in accordance with the processing time at the wafer processing station 3 and the processing time of the imprinting unit 60. That is, at the wafer processing station 3, for example, wafer processing for 200 wafers W can be performed every hour. On the other hand, at the imprint unit 60, for example, it is possible to perform imprint processing for 20 wafers W every hour. Therefore, -12-201212148 In the present embodiment, ten imprinting units 60 are provided at the imprint processing station 4. In the transfer area E3, a wafer transfer unit 70 that holds the wafer w and transports it is provided. The wafer transfer unit 70 is provided with, for example, a transfer arm that can be freely expanded and contracted in the horizontal direction and freely moved in the vertical direction and the vertical periphery (0 direction), and moves in the transfer area E3. The wafer W can be transferred between the wafer processing station 3 and the transfer unit 61. The stencil loading/unloading station 5 is provided at each embossing unit 60, and is provided with plural numbers (for example, one set). At the stencil loading/unloading station 5, a cassette mounting table 80 is provided. The cassette mounting table 80 is capable of freely mounting the stencil cassette CT. That is, the stencil loading/unloading station 5 is configured to be able to hold a plurality of stencils T. At the stencil loading/unloading station 5, a stencil conveying body 81 that holds the stencil T and transports it is provided. The stencil conveyance body 81 is freely expandable and contractible in the horizontal direction, and is also freely movable in the vertical direction and the vertical circumference (0 direction), and can transfer the stencil T between the wafer cassette CT and the transfer unit 82 described later. . At the stencil loading/unloading station 5, a transfer unit 82 for accommodating the stencil T between the embossing unit 60 and the embossing unit 60 is disposed. Next, the configuration of the photoresist coating units 30 to 33 of the wafer processing station 3 described above will be described. As shown in FIG. 6, the photoresist coating unit 30 is provided with a casing 1a having a loading/unloading port (not shown) in which a wafer W is formed on a side surface. -13- 201212148 At the central portion of the housing 100, a rotary chuck 110 that holds and rotates the wafer is provided. The spin chuck 110 is provided with a horizontal upper surface on which a suction port (not shown) for sucking the wafer W is provided, for example. The wafer W can be adsorbed and held on the spin chuck 1 10 by the attraction of the suction port. At the spin chuck no, the rotary drive unit 1 1 2 is provided through the shaft 111. By rotating the driving portion 1 1 2, the rotary chuck 1 1 0 can be rotated at a specific speed around the vertical direction and raised and lowered. Around the spin chuck 110, there is provided a cup 113 for receiving and recovering the liquid which has been scattered or dropped from the wafer w. Below the cup 113, a discharge pipe 114 for discharging the recovered liquid and an exhaust pipe Π 5 for exhausting the atmosphere in the cup 11 3 are connected. As shown in Fig. 7, generally, in the negative direction of the X direction of the cup 113 (the direction below the direction of Fig. 7), a track 120 » a track 120 extending in the Y direction (the left and right direction of Fig. 7) is formed, for example, It is formed from the outer side in the negative direction of the Y direction of the cup 1 13 (the left direction in Fig. 7) to the outer side in the positive direction of the Y direction (the right direction in Fig. 7). An arm 121 is attached to the track 120. At the arm 112, a photoresist liquid nozzle 122 for supplying the first photoresist to the wafer W is supported. The arm 121' is freely movable on the rail 120 by the nozzle driving portion 123. The 'photoresist liquid nozzle 122' can be moved from the standby portion 124 provided at the outer side in the positive direction of the cup direction 3 to the upper portion of the wafer w in the cup 1 1 3 It is possible to move further in the diameter direction of the wafer W on the wafer. Further, the -14-201212148 arm 121' can be freely moved up and down via the nozzle driving portion in, and the height of the photoresist liquid nozzle 1 22 can be adjusted. Further, in the first resist liquid used as the coating liquid in the present embodiment, for example, a photoresist having carbon is used. Further, as the coating liquid, a coating liquid for forming a SOG (Spin On Glass) film can also be used. The configuration of the photoresist coating units 31 to 33 is the same as that of the photoresist coating unit 30 described above, and thus the description thereof will be omitted. Next, the configuration of the heating units 42, 43, 52, 53 of the wafer processing station 3 described above will be described. As shown in FIG. 8, the heating unit 42 is provided with a casing 130 having a loading/unloading port (not shown) in which a wafer W is formed on a side surface. A mounting table 131 on which the wafer W is placed is provided on the bottom surface of the casing 130. The wafer W is placed on the upper surface of the mounting table 131 so that the surface to be processed faces upward. In the mounting table 131, a lift pin 132 for supporting and lifting the wafer W from below is provided. The lift pin 132 is vertically movable by the lift drive unit 133. On the upper surface of the mounting table 131, a through hole 134 through which the upper surface penetrates in the thickness direction is formed, and the lift pin 132 is inserted into the through hole 134. Further, on the upper surface of the mounting table 131, a hot plate 135 for heating the wafer W is provided. Inside the hot plate 135, a heater that generates heat by, for example, power supply is provided, and the hot plate 135 can be adjusted to a specific set temperature. Further, the hot plate 135 may be disposed above the wafer W, for example, at the top surface of the lid 140 to be described later. Further, a hot plate 135 may be provided above and below the wafer W. -15- 201212148 Above the mounting table 131, a cover 140 is provided which is freely movable up and down. The lid body 140 has an opening formed on the lower surface thereof and is integrated with the mounting table 131 to form a processing chamber K. At the upper center portion of the lid body 140, an exhaust portion 141 is provided. The atmosphere in the processing chamber K is uniformly exhausted from the exhaust portion 141. Further, since the configurations of the heating units 43, 52, and 53 are the same as those of the above-described heating unit 42, the description thereof will be omitted. Further, the configuration of the temperature adjustment units 40, 41, 50, and 51 is also the same as that of the above-described heating unit 42, and a temperature adjustment plate is used instead of the hot plate 135'. Inside the temperature adjustment plate, for example, a cooling member such as a Peltier element is provided, and the temperature adjustment plate can be adjusted to a set temperature. Further, in this case, the lid 140 at the heating unit 42 may be omitted. Next, the configuration of the imprint unit 60 of the above-described imprint processing station 4 will be described. As shown in FIG. 9, the embossing unit 60 is provided with a housing 15 having a loading/unloading port (not shown) on the side surface of the wafer W and a loading/unloading port (not shown) of the stencil T. . At the bottom surface of the casing 150, a wafer holding portion 151 for holding and holding the wafer W is provided. The wafer W is placed on the upper surface of the wafer holding portion 151 so that the surface to be processed faces upward. Inside the wafer holding portion 151, a lift pin 152 for supporting and lifting the wafer W from below is provided. The lift pin 〗 52 can be moved up and down by the lift drive unit 153. On the upper surface of the wafer holding portion 151, a through hole 154 through which the upper surface penetrates in the thickness direction is formed, and the lift pin 152 is inserted into the through hole 154. Further, the wafer holding portion 151' is movable in the horizontal direction and freely rotatable around the vertical direction by the moving mechanism 155' provided below the wafer holding portion 151. As shown in Fig. 10, in the negative direction of the X direction of the wafer holding portion 151 (the direction in the lower direction of Fig. 10), a rail 160 extending in the Y direction (the left and right directions in the drawing) is formed. The rail 160 is formed, for example, from the outside in the negative direction of the Y direction of the wafer holding portion 151 (the left direction in FIG. 10), and is formed outward in the positive direction of the Y direction (the right direction in FIG. 1A). until. At the track 16 0 , an arm 161 is attached. At the arm 161, a photoresist liquid nozzle 162 for supplying the second photoresist liquid onto the wafer W is supported. The photoresist liquid nozzle 162 is, for example, provided with an elongated shape in the X direction which is the same as or longer than the diameter of the wafer W. In the photoresist liquid nozzle 162, for example, a nozzle having an ink jet method is used, and a lower portion of the photoresist liquid nozzle 162 is formed with a plurality of supply ports (not shown) formed in a row along the longitudinal direction. . Further, the photoresist liquid nozzle 162 can strictly control the supply timing of the second photoresist liquid, the supply amount of the second photoresist liquid, and the like. The arm 161 is freely movable on the rail 160 by the nozzle driving portion 163. By this, the photoresist liquid nozzle 1 62 can be moved to the wafer on the wafer holding portion 151 from the standby portion 164 provided at the outer side in the Y direction on the positive side of the wafer holding portion 151. Up to the top of W, it is possible to move in the diameter direction of the wafer W on the surface of the wafer W. Further, the arm 161 can be freely moved up and down via the nozzle driving unit 163, and the height of the photoresist liquid nozzle 162 can be adjusted. -17- 201212148 Above the wafer holding portion 151 which is the top surface of the casing 150, a stencil holding portion 170 for holding the stencil T is generally provided as shown in Fig. 10. That is, the wafer holding portion 151 and the stencil holding portion 170 are such that the wafer W placed at the wafer holding portion 151 and the stencil T held at the stencil holding portion 170 are opposed to each other. The way to the side is configured. Further, the stencil holding portion 170 is provided with a suction cup 171 » suction cup 171 for sucking and holding the outer peripheral portion of the back surface T2 of the stencil T, and is provided by the moving mechanism 172 provided above the suction cup 171. Free to move in the vertical direction and free to rotate around vertical. Thereby, the stencil can be rotated in a specific direction with respect to the wafer W on the wafer holding portion 151 and raised and lowered. The stencil holding portion 170 is provided with a light source 173 provided above the stencil 保持 held by the suction cup 171. From the light source 173, light such as visible light, near-ultraviolet light, or ultraviolet light is emitted, and light from the light source 173 is irradiated to the lower side through the stencil 》. Further, in the embossing unit 60, it is set. There is a wafer transfer mechanism (not shown) that transfers the wafer W between the transfer unit 61 and a stencil transfer mechanism (not shown) that transports the stencil between the transfer unit 82 and the transfer unit 82. Further, the stencil conveying mechanism is configured to be rotatable so as to reverse the front and back surfaces of the stencil. In the above imprint system 1, a control unit 200 is generally provided as shown in Fig. 1. The control unit 200 is, for example, a computer, and includes a programmable storage unit (not shown). In the program storage unit, a program for performing wafer processing, imprint processing, and the like in the imprint system 1 is stored. Another -18- 201212148 outside the program, for example, can be recorded on a computer-readable hard disk (HD), floppy disk (FD), compact disc (CD), optical disk (MO), memory card, etc. The computer readable memory medium is installed in the control unit 200 from the memory. The imprint system 1 of the present embodiment is generally constructed as described above. Next, it is carried out by the imprinting system 1. Wafer processing, imprint processing, etc. are described. Figure 1 shows the main processing flow for this wafer processing and imprinting process. Figure 12 shows the state of wafer W and template T in each project. First, the template is moved in and out. At 5 places, the stencil T is taken out from the stencil cassette CT on the cassette mounting table 80 via the stencil conveying body 81, and conveyed to the transfer unit 82. Further, the stencil T in the stencil cassette CT is placed so that the surface T on which the transfer pattern C is formed is placed upward, and then the stencil T is passed through the stencil conveying mechanism in the embossing unit 60. The conveyance is carried into the imprint unit 60 (the project A1 of Fig. 11). At this time, the back surface of the stencil T is reversed via the stencil conveying mechanism. That is, the back surface T2 of the stencil T is directed upward. The stencil T carried into the embossing unit 60 is adsorbed and held at the chuck 171 of the stencil holder 170. Further, in the present embodiment, the stencils are transported to the embossing units 60, and the plurality of stencils are continuously transported to the embossing processing station 4 from the plurality of stencil loading/unloading stations 5. In this manner, in the transfer of the stencil to the embossing unit 60 from the stencil loading/unloading station 5, the wafer loading/unloading station 2 is transported by the wafer -19-201212 148 body 12, and the stencil is loaded from the cassette. The stencil cassette Cw on the stage 10 is taken out and transferred to the transfer unit 21 of the wafer processing station 3 (Project A2 of Fig. 11). Further, the wafer W in the wafer cassette Cw is housed so that the surface to be processed faces upward. Thereafter, the wafer W is transported to the photoresist coating unit 30 via the transport unit 20, and delivered to the spin chuck 110. Next, the photoresist liquid nozzle 122 is moved straight up over the center portion of the wafer W, and the wafer W is rotated. Then, the first photoresist liquid is supplied onto the rotating wafer W, and the first photoresist liquid is diffused on the wafer W by centrifugal force, and the first photoresist liquid is coated on the surface of the wafer W. Overall (Project A3 in Figure 11). Thereafter, the wafer W is transported to the heating unit 42 via the transport unit 20. The wafer W carried into the heating unit 42 is delivered to the lift pin 132 and placed on the mounting table 131. Next, the lid 140 is closed, and the wafer W is heated to, for example, 20 (TC) via the hot plate 135. After a certain period of time, the first photoresist liquid on the wafer W is fired, as shown in FIG. As shown in (a), in general, the first photoresist film t is formed on the wafer W (Fig. A4). The first photoresist film R: is formed, for example, as a film of 1 Onm. After that, the wafer W is transported to the temperature adjustment unit 40 via the transport unit 20, and the wafer W is adjusted to a specific temperature (for example, normal temperature), and then the wafer W is transferred via the transport unit 20. Transfer to the transfer unit 22. Then, the wafer W is transported to the imprint processing station 4 via the wafer transfer unit 70. Here, the above-mentioned projects A2 to A4 are repeatedly performed, and -20-201212148 is in plural The first photoresist film R! is formed on the wafer W, and the plurality of wafers W are continuously transferred to the imprint processing station 4. At this time, before the wafer W is transported to the imprint processing station 4 The wafer W on which the first photoresist film R! is formed may be temporarily stored in the buffer cassette 23. Thereafter, the wafer transfer unit 70 is used. The wafer W is transported to the transfer unit 61. Then, the wafer W is transported to the imprint unit 60 via the wafer transfer mechanism in the imprint unit 60 (item A5 of Fig. 11). The wafer W of 60 is delivered to the lift pin 15 2 and held on the wafer holding portion 151. Then, the wafer W held on the wafer holding portion 151 is moved. Positioning is performed at a specific position in the horizontal direction, and thereafter, the photoresist liquid nozzle 1 62 is moved in the diameter direction of the wafer W, and the second wafer is generally coated on the wafer W as shown in FIG. 12(b). The photoresist is formed to form the second photoresist film R2 (Project A6 in Fig. 12). At this time, the timing of supplying the second photoresist from the photoresist nozzle 162 is controlled by the control unit 200. Or a supply amount or the like is controlled, that is, at a photoresist pattern formed on the wafer W, to be applied to a portion corresponding to the convex portion (the concave portion corresponding to the transfer pattern C of the stencil T) The amount of the second photoresist liquid on the part is large, and is applied to the portion corresponding to the concave portion (the transfer pattern C is opposite to the convex portion) In this case, the amount of the second photoresist liquid is controlled in a small amount. Thus, the second photoresist is coated on the wafer W in response to the aperture ratio of the transfer pattern C. In addition, the second photoresist film R2 is formed to have a film thickness of, for example, 50 nm. If the second photoresist film R2 is formed on the wafer W, it is held on the wafer holding portion 151. The wafer W is moved to the position of the specific direction - 21, 2012, 148 in the horizontal direction, and the alignment is performed, and the template 保持 which is held at the stencil holding portion 1 7 Τ is rotated to a specific direction. Then, as shown in Fig. 12 (b) The arrow shown generally 'drops the stencil 至 to the W side of the wafer. The stencil system has been lowered to a specific position, and the surface of the stencil is smashed! ^ is pressed onto the second photoresist film R 2 on the wafer W. Further, this specific position is set in accordance with the height of the photoresist pattern formed on the wafer W. Then, light is irradiated from the light source 173. The light from the light source 147 is generally transmitted through the stencil to the second photoresist film 112 on the wafer W as shown in FIG. 12 (c), whereby the second photoresist Film R2 is photo-coincident. In this manner, the transfer pattern C of the stencil T is transferred to the second photoresist film R2 on the wafer W, and the photoresist pattern P is formed (the construction A7 of Fig. 11). Thereafter, as shown in Fig. 12 (d), the stencil T is raised, and a photoresist pattern P is formed on the wafer W. At this time, since the release agent S is applied to the surface m of the stencil T, there is no possibility that the photoresist on the wafer W adheres to the surface Ti of the stencil T. Thereafter, the wafer W is delivered to the wafer transfer mechanism via the lift pin 152, and is carried out from the imprint unit 60 and transported to the transfer unit 61 (item A8 of Fig. 11). Thereafter, the wafer W is transferred to the wafer processing station 3 via the wafer transfer unit 70, and then returned to the wafer cassette Cw via the wafer transfer body 12. Further, in the concave portion of the photoresist pattern P formed on the wafer W, there is a case where the residual film L of the thin photoresist remains, but 'for example, it may be external to the imprint system 1' as shown in the figure. The residual film L is generally removed as shown in 1 2 (e). Further, the above-described processes A5 to A8' use one stencil Τ' and -22-201212148 form a photoresist pattern P on each of the plurality of wafers w. Thereafter, if the works A5 to A8 are performed for the wafer W of a specific number, the template T is exchanged. That is, after the front and back surfaces of the stencil T are reversed via the stencil conveying mechanism, the stencil T is carried out from the embossing unit 60 and transported to the transfer unit 82 (Project A9 of Fig. 11). . Thereafter, the stencil T is sent back to the stencil cassette CT via the stencil conveyance body 81. Further, the timing at which the template T is exchanged is set in consideration of deterioration of the template T or the like. Further, when a different pattern P is formed at the wafer W, the stencil T is also exchanged. For example, it may be set to exchange the stencil τ every time the stencil T is used once. Further, for example, the stencils T may be exchanged for each wafer W, and for example, the stencils T may be exchanged for each batch. In this manner, in the imprint system 1, the specific resist pattern P is continuously formed for the plurality of wafers w while continuously exchanging the templates T. According to the above embodiment, in the imprint system 1, the photoresists of the first photoresist film I and the second photoresist film R2 are formed on the wafer W as shown generally in FIG. 12(e). Pattern P. Thereafter, at the etching processing unit (not shown) outside the imprint system 1, the photoresist pattern P of the second photoresist film R2 is used as a mask, and the first photoresist film 1 is etched to form light. Resistance pattern. As a result, the photoresist pattern of the first photoresist film and the photoresist pattern P of the second photoresist film R2 are integrated, and a sufficient etching resistance function is exhibited. Therefore, it is possible to appropriately etch the film to be processed on the wafer W and appropriately form the pattern of the film to be processed. Further, according to the above-described embodiment, a plurality of imprinting units 60 are disposed in the imprint processing station 4 for one wafer processing station 3. Therefore, the first photoresist film I can be formed on the plurality of wafers W by the wafer processing station 3, and the plurality of crystals in which the first photoresist film h is formed can be formed from the wafer processing station 3. The circle W is continuously conveyed to the imprint processing station 4. Further, since the stencil loading/unloading station 5 is connected to each of the embossing units 60, it is possible to continuously transport the plurality of stencils T to the embossing processing station 4 from the stencil loading/unloading station 5, and then The imprint processing station 4 is capable of performing imprint processing for each wafer W in parallel at each imprint unit 60 using each of the stencils T. Therefore, even when the processing time at the substrate processing station 3 and the processing time at the imprinting unit 60 are different, it is possible to continue without stopping the wafer processing at the substrate processing station 3. The wafer W is properly processed. Therefore, it is possible to form a specific photoresist pattern P on the wafer W appropriately and efficiently. Further, as a result, mass production of the semiconductor device can be achieved. Further, at the wafer processing station 3, the first photoresist liquid is applied onto the wafer W at the photoresist coating unit 30, and then the first photoresist liquid on the wafer W is placed at the heating unit 42. Made to burn. Therefore, it is possible to form the first photoresist film R on the wafer W as appropriate. In the imprint system 1 of the above-described embodiment, a plurality of stencils are placed in and out of each embossing unit 60. Station 5, however, as shown in Figs. 13 to 15, a single stencil loading/unloading station 300 may be provided. The stencil is moved into and out of the station 300 and is connected to the imprint processing station 4. The wafer loading/unloading station 2, the wafer processing station 3, the imprint processing station 4, the -24-201212148 template loading/unloading station 300 are arranged side by side in the Y direction (the horizontal direction of Fig. 13) in this order. . At the die loading/unloading station 300, a cassette mounting table 310 is provided. The cassette mounting table 310 is capable of freely placing a plurality of stencil cassettes Ct in a row in the X direction (upward and downward directions in FIG. 1). In other words, the template is moved into and out of the station 300, and is configured to hold a plurality of templates T. At the stencil loading/unloading station 300, a wafer transporting body 312 that can move on the transport path 311 extending in the X direction is provided. The stencil transfer body 312 is freely expandable and contractible in the horizontal direction, and is also freely movable in the vertical direction and the vertical direction (0 direction), and can be used in the wafer cassette CT and the transfer unit 320 or the buffer cassette described later. The template T is transferred between 321 . At the stencil loading/unloading station 300, a transfer unit 320 for performing the transfer of the stencil T between itself and the imprint processing station 4, and a buffer card 321 for temporarily storing the stencil T are disposed. . In addition, the buffer cassette 321 may be omitted as needed. Further, in the transfer area E3 of the imprint processing station 4, in addition to the wafer transfer unit 70, a stencil transfer unit 3 30 that holds the stencil T and transports it is provided. The wafer transfer unit 70 and the stencil transfer unit 303 are arranged so as not to interfere with each other. The stencil conveyance unit 330 is provided with, for example, a transfer arm that is freely expandable and contractible in the horizontal direction and freely movable in the vertical direction and the vertical periphery (0 direction). The stencil transfer unit 330 moves in the transfer area E3, and can transfer the modulo-25-201212148 version τ between the stencil loading/unloading station 300 and the transfer unit 61. In addition, the other components of the imprint system 1 are Since the configuration of the imprint system 1 of the above embodiment is the same, the description thereof is omitted. In this case, when the stencil is conveyed to the embossing unit 60 from the stencil loading/unloading station 300, first, at the stencil loading/unloading station 300, the stencil is carried from the cassette via the stencil conveying body 312. The stencil cassette CT on the table 310 is taken out and transported to the transfer unit 32. Thereafter, the stencil T is transported to the transfer unit 61 via the stencil transfer unit 330. Next, the stencil T is conveyed to the embossing unit 60 via the stencil conveying mechanism in the embossing unit 60 (the construction A1 of Fig. 11). Further, from the stencil loading/unloading station 300 to the imprint processing station 4, a plurality of stencils T are continuously transported. In addition, since the other processes of the wafer processing and the imprint process in the imprint system 1 are the same as those of the above-mentioned items A2 to A9, the description thereof will be omitted, and according to the present embodiment, Since the stencil is carried in and out of the station 3 to carry out the loading and unloading of the stencil T, the apparatus configuration of the embossing system 1 can be simplified, and the area occupied by the embossing system 1 can be reduced. Therefore, the manufacturing cost of the imprint system 1 can be reduced. Further, for example, a plurality of stencils T accommodated in one stencil CT can be carried into the embossing unit 60, or a stencil which can be carried out from the embossing unit 60 which is different from each other. T is housed in one stencil cassette CT. Therefore, according to the present embodiment, the degree of freedom in transporting and imprinting the stencil T in the imprint system 1 can be increased. -26-201212148 In the above-described embodiment, as in the flow of FIG. In general, after the first photoresist film R is formed on the wafer w, the wafer W is transferred to the imprint processing station 4, and then the second photoresist film R2 is formed. However, when the stencil T is brought into contact with the second photoresist film R2 and the transfer pattern C is transferred, even if the release agent S is formed on the surface of the stencil T, it is impossible to deny that there will still be a second The possibility that the photoresist film R2 adheres to the side of the stencil T. In view of the above, it is preferable to perform the process of improving the adhesion and the fixability of the second resist film R2 to the wafer W side before the formation of the second photoresist film R2. For example, when the material of the second photoresist film R2 is, for example, a UV curable resin, it is preferably applied to the surface of the first photoresist film R and formed into a film to be bonded to the UV curable resin. A sealant such as a decane coupling agent which is improved in adhesion. Such a coating treatment is preferably carried out, for example, after the first photoresist liquid is fired (after the work A4). In the case of applying such a pressure-sensitive adhesive, it is possible to use the same coating units 30 to 33 as shown in FIG. 6 when the coating of the first photoresist liquid for forming the first photoresist film I is performed. A coating device constructed. On the other hand, after the adhesive is applied in this manner, the wafer W is heated as necessary, and further cooled as necessary, and then carried into the imprinting unit 60 after "after" and FIG. The process shown in the above is the same, and the formation process of the second photoresist film R2 (engineering A6) may be performed. Further, when the adhesive is formed on the surface of the first photoresist film L as described above, it is also possible to use a coating apparatus for coating liquids other than the coating unit 30 described above. The vapor of the adhesive is supplied to the surface of the wafer W to form a film. Fig. 16 is a schematic view showing the constitution of the film forming unit 250 of the coating unit used as the adhesive at this time. This film forming unit 250 is mounted on the substrate processing station 3, for example, instead of one of the coating units 30 to 33. As shown in Fig. 16, the film forming unit 250 is provided with a mounting table 260 on which the wafer W is placed, and a lid 261 provided above the mounting table 260. The lid body 261 is configured to be freely movable in the vertical direction by, for example, a lifting mechanism (not shown). Further, the lower surface of the lid body 261 is open. Then, the lid body 261 and the mounting table 260 are integrated, and the sealed processing space K can be formed. At the mounting table 260, the wafer W is placed such that the surface of the wafer W (for example, the surface on which the first photoresist film Ri is formed) faces upward. On the upper surface of the mounting table 260, a temperature control board 270 for controlling the temperature of the wafer W is provided, and a temperature control board 270 is provided, for example, a Peltier element or the like is incorporated therein, and the wafer W can be adjusted to a specific The temperature. In the mounting table 260, a lift pin 271 for supporting and lifting the wafer W from below is provided. The lift pin 271 can be moved up and down by the lift drive unit 72. On the upper surface of the mounting table 260, a through hole 273 through which the upper surface penetrates in the thickness direction is formed, and the lift pin 271 is inserted into the through hole 273. Further, a gas supply pipe 290 for supplying steam and water vapor of the adhesive to the wafer W is provided on the top surface of the lid 261. In the gas -28-201212148, the supply pipe 290 is connected to the adhesive supply source 291 for supplying the vapor of the adhesive, and the water vapor supply source 292 for supplying the steam. Further, the gas supply pipe 290 is provided with a supply device group 293 including steam and a slave steam supply source for the adhesive supplied from the adhesive supply source 291. The valve for controlling the flow operation of the supplied water vapor is a flow rate adjusting unit or the like. The adhesive supply source 291 is internally stored with a liquid-like adhesive. Further, at the adhesive supply source 29 1 , a gas supply pipe (not shown) that supplies nitrogen gas into the adhesive supply source 29 1 is connected. In the adhesive supply source 29 1 , the liquid-like adhesive is vaporized by supplying nitrogen gas to the inside, and a vapor of the adhesive is generated. The vapor of the adhesive agent is supplied to the gas supply pipe 290 by using the nitrogen gas as a carrier gas. The water vapor supply source 292 is, for example, stored therein with water, and then, for example, the water is heated and vaporized to generate water vapor. On the side of the lid body 261, an exhaust pipe 294 for exhausting the atmosphere of the processing space is connected. At the exhaust pipe 294, an exhaust pump 295 for evacuating the atmosphere of the process space is connected. In order to form a film on the surface of the first photoresist film R! using the film forming unit 250 having such a configuration, for example, after the process 4 shown in FIG. 11, the wafer W is transferred. To the coating unit 250. The wafer W that has been transported is delivered to the lift pin 271 and placed on the mounting table 260. At this time, the wafer W on the mounting table 260 is temperature-controlled to a specific temperature (for example, 50 ° C) via the temperature control plate 270. Then, the lid body 261 is lowered -29-201212148, and the sealed processing space K is formed by the lid body 261 and the mounting table 260, and then the vapor of the adhesive is supplied from the gas supply tube 290 to the processing. Space K. The vapor of the supplied sealant is deposited on the surface of the wafer W. Thereafter, water vapor is supplied from the gas supply pipe 290 to the processing space K, and the water vapor is supplied to the adhesive deposited on the wafer w. When water vapor is supplied, the molecular layer of the adhesive deposited on the wafer W is hydrolyzed, and the adhesive molecules are bonded to the surface of the wafer W by dehydration condensation. Thereby, the first photoresist film R! formed on the wafer W and the second photoresist film R2 formed thereon are improved in adhesion therebetween. Further, after the adhesive is formed on the wafer W, the atmosphere of the processing space K may be replaced with an inert gas, for example, replaced with nitrogen. According to the method of supplying the adhesive vapor to form the film on the wafer W, it is not necessary to perform the cleaning even when the film is formed by the application of the liquid adhesive. It is able to form a film more uniformly. Further, in the above example, the wafer W on the mounting table 260 is temperature-adjusted to a specific temperature (for example, 50 ° C) via the temperature control plate 270. However, it is not always necessary to adjust the wafer W temperature to Such a temperature which is higher than normal temperature and higher temperature can be directly formed at a normal temperature (for example, 2 (TC to 25 ° C). Further, in the above example, the water vapor is actively supplied. Promote the decomposition of water, but even if it is not so active in the supply of water vapor, the water in the surrounding atmosphere will also be hydrolyzed, and the actual combination of dehydration condensation is described in -30-201212148. Further, in the application of the first photoresist film, the vapor of the photoresist may be supplied onto the wafer W, and the first photoresist film Ri may be formed on the wafer W. The first photoresist film R! is preferably provided with an effect of improving the adhesion as described above. In the imprint system 1 of the above embodiment, the configuration of each processing unit is not limited to the above. In the embodiment, as long as it is capable of performing each process Although various configurations are described above with reference to the accompanying drawings, the present invention is not limited thereto. As long as it is a peer, it should be understood. Various modifications and alterations are conceivable within the scope of the spirit of the invention as set forth in the appended claims. The present invention is of course not included in the technical scope of the present invention. In this case, various forms can be employed. In the case of the present invention, even when the substrate is a FPD (flat panel display) other than a wafer, or a substrate such as a mask for a reticle, Application [Comparative Description of Drawings] [Fig. 1] A plan view showing a schematic configuration of an imprinting system of the present embodiment. [Fig. 2] A schematic view of the configuration of the imprinting system of the present embodiment Fig. 3 is a side view showing the outline of the configuration of the imprint system of the present embodiment. -31 - 201212148 [Fig. 4] A perspective view of the stencil. [Fig. 5] A side view of the stencil. 6 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 7 is a longitudinal cross-sectional view showing a schematic configuration of a photoresist coating unit. Fig. 8 is a view showing a configuration of a heating unit. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 9] A longitudinal sectional view showing a schematic view of the composition of an imprinting unit. [Fig. 1 〇] A cross-sectional view showing a schematic view of the composition of an imprinting unit. Figure 11 is a flow chart showing the various processes for wafer processing and imprint processing. [Fig. 12] is a mode for the state of wafers and stencils in each process of wafer processing and imprint processing. The explanatory diagram shown is (a) showing a pattern in which a first photoresist film is formed on a wafer, and (b) showing a pattern in which a second photoresist film is formed on a wafer. (c) is a display for optically overlapping the second photoresist film on the wafer, and (d) is for exhibiting a pattern of a photoresist pattern formed on the wafer, (e) It is shown for the appearance of removing the residual film on the wafer. Fig. 13 is a plan view showing a schematic configuration of an imprint system of another embodiment. -32- 201212148 [Fig. 14] A side view showing a schematic configuration of an imprint system of another embodiment. Fig. 15 is a side elevational view showing the outline of the structure of the imprinting system of the other embodiment (Fig. 16). [Description of main component symbols] 1 : Imprinting system 2 : Wafer loading/unloading station 3 - Wafer processing station 4 : Imprint processing station 5 : Stencil loading/unloading station 30 to 33: Photoresist coating units 42, 43, 52, 53: Heating unit 60: Imprinting unit 2 0 〇: Control unit 25 0 : Film forming unit 3 〇〇: stencil loading/unloading station El, E2: embossed block E3: conveying area C: transfer pattern P: photoresist Pattern: 1st photoresist film -33- 201212148 R2: 2nd photoresist film S: release agent T: template W: wafer-34-