TW201211972A - Control board for amorphous silicon gate - Google Patents
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201211972201211972
. TW6361PA 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種閘極驅動器之控制電路板及控 制方法,且特別是有關於一種非晶石夕閘極驅動器 (Amorphous Silicon Gate,ASG )之控制電路板及控制方法。 【先前技術】TW6361PA VI. Description of the Invention: [Technical Field] The present invention relates to a control circuit board and a control method for a gate driver, and more particularly to an Amorphous Silicon Gate (ASG) Control circuit board and control method. [Prior Art]
隨著非晶石夕製造技術的成長,現今業界已能利用非晶 石夕閘極製造技術(Amorphous Silicon Gate,ASG)將閘極驅 動器整合於液晶面板上,此閘極驅動器又稱為非晶矽閘極 驅動器。由於非晶矽閘極驅動器係由液晶面板中之非晶矽 溥骐電晶體(Amorphous Silicon Thin Film Transistor, a-si TFT)所形成,因此,可減少原先閘極驅動晶片的使用需求 及外接零組件的接點數。 清參照第1圖’第1崎示係為傳統非晶石夕液晶顯 ⑽:意圖。傳統非晶石夕液晶顯示器i G包括液晶面板 製造=敕電12G、源極驅動1113G及顧非晶石夕間 140。抑^"°於液曰曰面板110上之非晶石夕閘極驅動器 124。:核電路Ϊ 12°包括直流轉換器122及電位轉換i 控制電路驅動為130及非晶矽閘極驅動器140係受控3 v〇FF = 12Q。直流轉換器⑵輸出直流電壓ν〇Ν^ 王電位轉換器124,佶呈$ , 至非晶石夕間極驅動号140。轉換器124輸出訊$ 括時脈訊p ^包轉換器124輸出的訊號 電壓vss \、時脈訊#b CK2、起始訊號STV及工< 。源極驅動器130用以輸出對應之像素資料至 4 . 201211972With the growth of amorphous Aussie manufacturing technology, the Amorphous Silicon Gate (ASG) has been integrated into the liquid crystal panel. This gate driver is also called amorphous.矽 Gate driver. Since the amorphous gate driver is formed by an amorphous silicon thin film transistor (a-si TFT) in the liquid crystal panel, the use of the original gate driver wafer and the external zero can be reduced. The number of contacts for the component. Referring to Fig. 1 'the 1st show system is a conventional amorphous stone liquid crystal display (10): intention. The conventional amorphous lithographic liquid crystal display i G includes a liquid crystal panel manufacturing = 敕 12G, a source driving 1113G, and an amorphous glaze 140. Assuming an amorphous austenitic gate driver 124 on the liquid helium panel 110. The core circuit Ϊ 12° includes a DC converter 122 and a potential conversion i control circuit is driven to 130 and the amorphous gate driver 140 is controlled by 3 v 〇 FF = 12Q. The DC converter (2) outputs a DC voltage ν 〇Ν ^ Wang potential converter 124, 佶 is $, to the amorphous stone 极 pole drive number 140. The converter 124 outputs the signal voltage vss \, the time pulse #b CK2, the start signal STV, and the work outputted by the p-packet converter 124. The source driver 130 is configured to output corresponding pixel data to 4 . 201211972
TW6361PA 曰曰面板。110,而非晶矽閘極驅動器14〇根據時脈訊號cK卜 夺脈汛旒CK2、起始訊號STV及工作電壓VSS輸出閘極 驅動訊號至液晶面板110。 。月參照第2圖,第2圖繪示係為非晶矽閘極驅動器 ^0之方塊不意圖。非晶矽閘極驅動器140包括移位暫存 态8心至SRn+i。移位暫存器8心至SR·〗根據時脈訊號 CK1時脈訊號CK2、起始訊號STV及工作電壓vss輸 出閘極驅動訊號OUT,至〇υτΝ。 δ月同時參照第3圖及第4圖,第3圖繪示係為第N 、及^位暫存器之電路圖,第4圖繪示係為第3圖繪示之訊 j蚪序圖。第N級移位暫存器sRn包括電晶體Μι至Μ*。 電晶體M3根據時脈訊號CK1/CK2輸出閘極驅動訊號 〇UTN’而電晶體M4耦接電晶體並受控於第級移 位暫存益SRN+1輸出之閘極驅動訊號〇UTn+i。電晶體 係又控於閘極驅動訊號〇UTn+i ’而電晶體M1耗接電晶體 M2 ’亚根據第N_〗級閘極驅動訊號〇υτ…驅動電晶體 M3。電晶體Ml經轉合電容C1耗接至電晶體副。 然而,由於非晶矽薄膜電晶體的移動率(Mobility)及 臨限電壓會隨著溫度而改變,因此在高溫或低溫時容易導 致液晶顯示器無法正常工作。 【發明内容】 本發明係有關於一種非晶矽閘極驅動器(Am0rph〇us Silicon Gate,ASG)之控制電路板及控制方法係根據溫 度動態調整閘極驅動訊號之高邏輯位準或低邏輯位準,: 201211972TW6361PA 曰曰 panel. 110, and the amorphous gate driver 14 turns the gate driving signal to the liquid crystal panel 110 according to the clock signal cK, the pulse CK2, the start signal STV, and the operating voltage VSS. . Referring to Fig. 2, the second figure shows the block of the amorphous gate driver ^0. The amorphous germanium gate driver 140 includes shifting the temporary state 8 to SRn+i. The shift register 8 core to SR· is output according to the clock signal CK1 clock signal CK2, the start signal STV and the operating voltage vss output gate drive signal OUT to 〇υτΝ. At the same time, the δ month refers to the third and fourth figures. The third figure shows the circuit diagram of the Nth and the sinister registers, and the fourth figure shows the sequence diagram of the ninth diagram. The Nth stage shift register sRn includes transistors Μι to Μ*. The transistor M3 outputs a gate driving signal 〇UTN' according to the clock signal CK1/CK2, and the transistor M4 is coupled to the transistor and controlled by the gate driving signal 〇UTn+i of the first stage shifting temporary storage SRN+1 output. . The transistor is controlled by the gate driving signal 〇UTn+i ’, and the transistor M1 is consuming the transistor M2 ’. The transistor M3 is driven according to the N_th level gate driving signal 〇υτ. The transistor M1 is consumed by the transfer capacitor C1 to the transistor pair. However, since the mobility (Mobility) and the threshold voltage of the amorphous germanium film transistor change with temperature, it is liable to cause the liquid crystal display to malfunction at high or low temperatures. SUMMARY OF THE INVENTION The present invention relates to an amorphous germanium gate driver (ASG) control circuit board and control method for dynamically adjusting the high logic level or low logic bit of the gate driving signal according to temperature. Accurate, 201211972
• - TW6361PA 確保液晶顯示器的正常工作。 根據本發明,提出-種非晶石夕閉極驅動器(八丽沖_ =麵Gate,ASG)之控制電路板。非晶賴極驅動器 爲Μ1·ASG)之控制電路板包括直流電 源轉換益、適應性電源電路及電位轉換器(处咖), 懈動器用以輸出複數個間極驅動訊號。直流 m徠益用以提供直流電壓。適應性電源電路包括溫度 • 調整電路。溫度感測元件感測溫度。電壓 = 感測元件,並根據溫度動態調整直流 少-訊Sir電壓。電位轉換器根據操作電壓輸出至 位準相關^/曰石夕閉極驅動益’使得閑極驅動訊號之邏輯 位早相關於操作電壓。 竹• - TW6361PA ensures the LCD monitor is working properly. According to the present invention, a control circuit board of an amorphous austenitic closed-pole driver (Bai Chong_ = Face Gate, ASG) is proposed. The control circuit board of the 赖1·ASG) includes a DC power conversion benefit, an adaptive power supply circuit and a potential converter (the coffee maker), and the actuator is used to output a plurality of interpole drive signals. The DC m is used to provide a DC voltage. The adaptive power circuit includes temperature • an adjustment circuit. The temperature sensing element senses the temperature. Voltage = Sensing component, and dynamically adjusts the DC-Sir voltage according to the temperature. The potential converter outputs to the level correlation according to the operating voltage, and the logic bit of the idle driving signal is correlated with the operating voltage. bamboo
Siiic:=發二提出一種非晶矽間極驅動器(Am—h_ 輸出閘極驅動訊號之=方法。非晶矽閘極驅動器用以 感測溫度·利用且控制方法包括:利用溫度感測元件 #壓,以輪出^電電严壓調整電路根據溫度動態調整直流電 至非晶石夕閘極驅以ΐ根據操作電壓輪出至少一訊號 於操作電壓。a ’使付問極驅動訊號之邏輯位準相關 下文 特舉二明之上述及其他方面有更佳的瞭解,下 A例’教配合所附圖式,作詳細說明如下: 【實施方式】 述實施例夜日日顯示器因溫度變化而無法正常工作,下 種控制非晶石夕間極驅動器(Amorphous 201211972Siiic:=Fei 2 proposes an amorphous inter-electrode driver (Am-h_ output gate drive signal = method. Amorphous 矽 gate driver is used to sense temperature and utilization and control method includes: using temperature sensing element# Pressing to turn off the electric power and pressure regulation circuit to dynamically adjust the DC current to the amorphous rock gate drive according to the temperature to rotate at least one signal according to the operating voltage to operate the voltage. a 'make the logic level of the driver signal For the above and other aspects of the following specific description, the following is a detailed description of the following example: [Embodiment] The nighttime display of the embodiment does not work properly due to temperature changes. , the next kind of control amorphous austenite pole driver (Amorphous 201211972
TW6361PA *· ,,TW6361PA *· ,,
Silicon Gate,ASG)之控制電路板及控制方法。非晶矽閘 極驅動器(Amorphous Silic〇n Gate,ASG )之控制電路板包 括直流電源轉換器、適應性電源電路及電位轉換器 ter)’且非㈣閘極驅動器用以輸出複數個閘極驅動訊 號。直流電源轉換器用以提供直流電壓。適應性電源電路 包括溫度感測元件及電壓調整電路。溫度感測元件感測溫 度。電壓調整電路係耦接溫度感測元件,並根據溫度動態 5周整直流電壓’以輪出操作電壓。電位轉換器根據操作電 壓輸出至少一訊號至非晶石夕閘極驅動器,使得閘極驅動訊 號之邏輯位準相關於操作電壓。 非日日石夕閘極驅動器(Am〇rph〇us siiicon Gate,ASG )之 控制方法包括提供直流電壓;利用溫度感測S件感測溫 度。利用電C 5周整電路根據溫度動態調整直流電壓,以輸 出知作電壓,以及根據操作電壓輸出至少一訊號至非晶石夕 閘極驅動益,使得閘極驅動訊號之邏輯位準相關於操作電 壓。茲舉數個實施例詳細說明如下。 弟一貫施例 v *、弟5圖’第5圖繪示係為依照本發明實施例之 非:夕液日曰顯示态之示意圖。非晶矽液晶顯示$ 包括 矿曰^面板210、控制電路板220、源極驅動器230及利用 y b曰夕閘極製造技術整合於液晶面板21 〇上之非晶石夕閘極 驅動°。240。控制電路板220包括直流轉換器222(DC/DC Converter)、電位轉換器224 ([⑼以%出以)及適應性電 源電路226。源極驅動器23〇係受控於控制電路板22〇輸 201211972Silicon Gate, ASG) control board and control method. The control circuit board of the Amorphous Silic Gate Gate (ASG) includes a DC power converter, an adaptive power supply circuit and a potential converter ter)' and a non-fourth gate driver for outputting a plurality of gate drivers Signal. A DC power converter is used to provide a DC voltage. The adaptive power supply circuit includes a temperature sensing element and a voltage adjustment circuit. The temperature sensing element senses the temperature. The voltage adjustment circuit is coupled to the temperature sensing element and dynamically turns the DC voltage by 5 weeks according to the temperature to rotate the operating voltage. The potential converter outputs at least one signal to the amorphous gate driver according to the operating voltage, so that the logic level of the gate driving signal is related to the operating voltage. The control method of the non-daily 夕 〇 闸 闸 驱动 驱动 AS AS AS AS AS AS AS AS AS AS AS AS AS AS AS AS AS 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制The electric C 5 week whole circuit dynamically adjusts the DC voltage according to the temperature to output the known voltage, and outputs at least one signal according to the operating voltage to the amorphous gate driving benefit, so that the logic level of the gate driving signal is related to the operation. Voltage. Several embodiments are described in detail below. The same is true for the embodiment of the present invention. The fifth embodiment of the present invention is a schematic diagram showing the display state of the solar eclipse in accordance with the embodiment of the present invention. The amorphous germanium liquid crystal display panel includes a germanium panel 210, a control circuit board 220, a source driver 230, and an amorphous austenitic gate driver integrated on the liquid crystal panel 21 by a y b 闸 gate fabrication technique. 240. The control circuit board 220 includes a DC converter 222 (DC/DC Converter), a potential converter 224 ([(9) is output in %), and an adaptive power supply circuit 226. The source driver 23 is controlled by the control circuit board 22〇201211972
* · TW6361PA 出像素資料至液晶面板210 ’而非晶石夕閘極驅動器240係 受控於控制電路板220輸出閘極驅動訊號至液晶面板 210。直流轉換器222輸出直流電壓VON及VOFF至適應 性電源電路226,適應性電源電路226包括溫度感測元件 226a及電壓調整電路226b。溫度感測元件226a感測溫度 T ’而電壓調整電路226b係耦接溫度感測元件226a,並根 據溫度T分別動態調整直流電壓VON及VOFF,以輸出 馨操作電壓VON(T)及VOFF(T)。電位轉換器224根據操作 電壓VON(T)及VOFF(T)輸出時脈訊號CK1、時脈訊號 CK2、起始訊號STv及工作電壓VSS至非晶矽閘極驅動 咨240 ’使得閘極驅動訊號之高邏輯位準及低邏輯位準分 $相關於操作電壓V0N(T)及VOFF(T)。由於適應性電源 甩路226根據溫度動態地調整直流電壓VON及VOFF,以 輪出操作電壓V〇N(T)及VOFF(T)至電位轉換器224,因 匕間極驅動訊號之高邏輯位準及低邏輯位準將隨溫度變 化而予以動態調整,以防止液晶顯示器因溫度變動而無法 正常工作。 …、 ^ 請參照第6圖及第7圖,第6圖繪示係為依照第一實 t例之適應性電源電路之電路圖,第7圖繪示係為第一實 知例對應之操作電壓隨溫度變化之示意圖。前述第5圖繪 不之適應性電源電路226例如為第6圖繪示之適應性電源 電路60 、 ^ 且剞述第5圖繪示之溫度感測元件226a及電壓 二·^电路226b例如為第6圖繪示之溫度感測元件6〇a及 龟堅凋法電路60b。溫度感測元件60a包括負溫度係數之 熱敏電阻RT ’而電壓調整電路6〇b包括電晶體qi、電ps 201211972 TW6361PA , ,t R1及電阻R2。電晶體Q1之第一端接收直流電壓VON, 而電晶體Q1之第二端輸出操作電壓VON (T)。電阻R1 係耦接於電晶體Q1之第一端與電晶體Q2之控制端之間。 電阻R2係耦接於熱敏電阻RT與一接地端之間,且熱敏電 阻RT耦接於電阻R1及電阻R2之間。 需說明的是,液晶面板中流經像素的電流 心= ’當溫度上升時’移動率凡隨之上 升,將導致電流/„上升。此時,如果能相對降低非晶矽薄 膜電晶體的電壓匕將能抑制電流的上升。相反地, 當溫度下降時,移動率凡隨之下降,將導致電流/„下降。 此時,如果能相對增加非晶矽薄膜電晶體的電壓L,將能 抑制電流4的下降。於第6圖繪示中,操作電壓* · TW6361PA out pixel data to the liquid crystal panel 210' and the amorphous rock gate driver 240 is controlled by the control circuit board 220 to output a gate driving signal to the liquid crystal panel 210. The DC converter 222 outputs DC voltages VON and VOFF to the adaptive power supply circuit 226, and the adaptive power supply circuit 226 includes a temperature sensing element 226a and a voltage adjustment circuit 226b. The temperature sensing component 226a senses the temperature T′ and the voltage adjusting circuit 226b is coupled to the temperature sensing component 226a, and dynamically adjusts the DC voltages VON and VOFF according to the temperature T to output the singular operating voltages VON(T) and VOFF(T). ). The potential converter 224 outputs the clock signal CK1, the clock signal CK2, the start signal STv, and the operating voltage VSS to the amorphous gate drive 240' according to the operating voltages VON(T) and VOFF(T) to make the gate driving signal The high logic level and the low logic level value $ are related to the operating voltages V0N(T) and VOFF(T). Since the adaptive power supply circuit 226 dynamically adjusts the DC voltages VON and VOFF according to the temperature, the operating voltages V〇N(T) and VOFF(T) are turned to the potential converter 224 because of the high logic bit of the inter-turn driving signal. The quasi-low and low logic levels are dynamically adjusted with temperature changes to prevent the LCD from malfunctioning due to temperature variations. ..., ^ Please refer to FIG. 6 and FIG. 7 , FIG. 6 is a circuit diagram of an adaptive power supply circuit according to the first practical example, and FIG. 7 is a corresponding operating voltage corresponding to the first practical example. Schematic diagram of changes with temperature. The adaptive power supply circuit 226 shown in FIG. 5 is, for example, the adaptive power supply circuit 60 shown in FIG. 6, and the temperature sensing element 226a and the voltage circuit 226b shown in FIG. 5 are, for example, FIG. 6 shows the temperature sensing element 6〇a and the turtle hardening circuit 60b. The temperature sensing element 60a includes a negative temperature coefficient thermistor RT' and the voltage adjusting circuit 6'b includes a transistor qi, an electric ps 201211972 TW6361PA, , a R R1 and a resistor R2. The first end of the transistor Q1 receives the DC voltage VON, and the second end of the transistor Q1 outputs the operating voltage VON (T). The resistor R1 is coupled between the first end of the transistor Q1 and the control terminal of the transistor Q2. The resistor R2 is coupled between the thermistor RT and a ground, and the thermistor RT is coupled between the resistor R1 and the resistor R2. It should be noted that the current flowing through the pixel in the liquid crystal panel = 'When the temperature rises', the moving rate will rise, which will cause the current to rise. At this time, if the voltage of the amorphous germanium thin film transistor can be relatively reduced. It will be able to suppress the rise of the current. Conversely, when the temperature drops, the rate of movement will drop, which will cause the current to drop. At this time, if the voltage L of the amorphous germanium thin film transistor can be relatively increased, the fall of the current 4 can be suppressed. Operating voltage in Figure 6
VONiT) = VON x R2 + RT一-Κβ/.,當溫度上升時,由於熱敏電阻 R\ + R2 + RT RT之阻值隨之下降,因此操作電壓VON(T)將隨之下降。 反之,當溫度下降時,由於熱敏電阻RT之阻值隨之上升, 因此操作電壓VON ( T)將隨之上升。由於操作電壓VON (T )的上升將連帶使得閘極驅動訊號的高邏輯位準上 升,因此非晶矽薄膜電晶體的電壓心隨之增加,進而抑制 電流的下降,以確保液晶顯示器的正常工作。 請參照第11圖,第11圖繪示係為閘極驅動訊號之高 邏輯位準隨溫度調整之示意圖。如前所述,掃描驅動訊號 的高邏輯位準會隨操作電壓VON(T)而改變。舉例來說, 201211972VONiT) = VON x R2 + RT--Κβ/. When the temperature rises, the resistance voltage R\ + R2 + RT RT decreases, so the operating voltage VON(T) will decrease. Conversely, when the temperature drops, the operating voltage VON (T) will rise as the resistance of the thermistor RT rises. Since the rise of the operating voltage VON (T) causes the high logic level of the gate driving signal to rise, the voltage core of the amorphous germanium transistor transistor increases, thereby suppressing the current drop to ensure the normal operation of the liquid crystal display. . Please refer to Figure 11, which shows a schematic diagram of the high logic level of the gate drive signal as a function of temperature. As mentioned earlier, the high logic level of the scan drive signal changes with the operating voltage VON(T). For example, 201211972
, · TW6361PA 當溫度T!上升至溫度72時,操作電❹ 度上升而下降,造成掃描驅動訊號隨溫, · TW6361PA When the temperature T! rises to the temperature of 72, the operating power rises and falls, causing the scan drive signal to follow the temperature.
Vgh下降為掃描驅動訊號 。、位準 地,者、、田声τ! 4料位準Vgh2。相反 地田/皿度T1下降至溫度丁3時,操作電麗V〇N(t)2 隨溫度下降而上升,造成掃描驅動訊號g 糸 準Vgh上升為掃描驅動訊號G(T3)的高邏輯位準:二輯位 第二實施例 請參照第8圖及第9圖,第8圖繪示係為依昭# _ , 施例之適應性電源電路之電路圖,第9騎示二1 施例對應之操作電壓隨溫度變化之示意圖Y前述第f: 示之適應性電源電路226例如為第δ圖繪示之適應性= 電路80,且前述第5圖繪示之溫度感測元件22如及 調整電路226b例如為第8圖繪示之溫度感測元件8如 電壓調整電路80b。當第8圖繪示之適應性電源電路 上第6圖繪示之適應性電源電路60時,則操作電壓v〇Ni 及VOFF(T)隨溫度變化的曲線則如第9圖繪示。溫度感1 元件80a包括負溫度係數之熱敏電阻RT,而電壓調^電I 80b包括電晶體Q1、電阻R1及電阻R2。電晶體 一端接收直流電壓V〇FF ’而電晶體Q1之第二端輸出 作電壓VOFF (T)。電阻R1係粞接至電晶體Q1之控制 及熱敏電阻RT ’且熱敏電阻RT耦接於電晶體Q丨之第 端及電晶體之控制端之間。電阻R2係耦接於電阻R1與 接地端之間。Vgh drops to the scan drive signal. , the position of the ground, the person, the sound of the field τ! 4 material level Vgh2. On the contrary, when the field/span T1 drops to a temperature of 3, the operating voltage V〇N(t)2 rises with the temperature drop, causing the scan driving signal g 糸Vgh to rise to the high logic of the scan driving signal G(T3). Level: The second embodiment of the second embodiment, please refer to Figure 8 and Figure 9. Figure 8 shows the circuit diagram of the adaptive power supply circuit of the system, IX. A schematic diagram of the corresponding operating voltage as a function of temperature. The f-type adaptive power supply circuit 226 is, for example, adapted to the δ diagram, the circuit 80, and the temperature sensing element 22 shown in FIG. The adjustment circuit 226b is, for example, the temperature sensing element 8 shown in FIG. 8, such as the voltage adjustment circuit 80b. When the adaptive power supply circuit 60 is shown in Fig. 6 on the adaptive power supply circuit shown in Fig. 8, the curves of the operating voltages v〇Ni and VOFF(T) as a function of temperature are as shown in Fig. 9. The temperature sense 1 element 80a includes a thermistor RT of a negative temperature coefficient, and the voltage regulator I 80b includes a transistor Q1, a resistor R1, and a resistor R2. One end of the transistor receives the DC voltage V〇FF ' and the second end of the transistor Q1 outputs the voltage VOFF (T). The resistor R1 is connected to the control of the transistor Q1 and the thermistor RT', and the thermistor RT is coupled between the first end of the transistor Q丨 and the control terminal of the transistor. The resistor R2 is coupled between the resistor R1 and the ground.
201211972 TW6361PA 需說明的曰 ' 1 = \_ c w 、疋,液晶面板中流經像素的電流 ’當溫度上升時,移動率凡隨之上 膜電晶c上升。此時,如果能相對降低非晶矽薄 當溫度下降時,:二:能抑制電流的上升。相反地, 寺移動率凡隨之下降,將導 此時’如果能. 電'"IL々下降。 .相對^加非晶矽薄膜電晶體的本^ 抑制電流/的了收 ^L ’將能 ϋ的下降。於第8圖繪示φ V〇FF{T)^v〇FFx RX + R2 ’操作電壓 ^TT^IT^+F™,當溫度上升時,& RT之阻值隨 由於熱破電阻 K下降’因此操作電壓V〇FF 升。反之,由 (T)將隨之上 L , 田'酿度下降時,由於熱敏電阻 上升,因此拇 了之阻值隨之 知作電壓V〇FF(T)將隨之下降丄 壓V〇ff ( 丁、 。由於操作電 的上升將連帶使得閘極驅動訊 準上升,因此非曰磽的低邏輯位 匕非日日矽溥膜電晶體的電壓L隨 抑制雷、;* 7 ΛΑ I <降低,進而 爪。的上升,以確保液晶顯示器的正 A* 吊 4乍 〇 h多照第12圖,第12圖繪示係為間柘 邏輯伋準及低遴鈕 ·軀動矾號之高 低璉軏位準隨溫度調整之示意圖 掃描驅動訊號的高邏輯位準及低邏輯位準^前所述’ 電壓VON⑴及VqFF(t)而改變。^;、別隨操作 T1上升至溫度T4時,操作電壓v〇N ( T ) : 〇兒田’皿度 而下降’造成掃描驅動訊號G(T1)的高邏輯^’皿度上升 為掃推驅動訊號G(T2)的高邏輯位準ν 下降 V0砰⑴賴溫度上料上升,造成 1操作電壓 田罐動訊; 201211972201211972 TW6361PA 需 ' 1 = \_ c w , 疋, the current flowing through the pixel in the liquid crystal panel ’ When the temperature rises, the mobility increases with the film crystal c. At this time, if the amorphous thin can be relatively reduced, when the temperature is lowered, the second: can suppress the rise of the current. Conversely, the rate of temple movement will drop, and it will lead to 'if you can. Electricity' " IL 々 decline. The relative suppression current / of the amorphous 矽 film transistor will reduce the ϋ. In Figure 8, φ V〇FF{T)^v〇FFx RX + R2 'operating voltage ^TT^IT^+FTM is shown. When the temperature rises, the resistance of & RT decreases with the thermal breaking resistance K. 'Therefore the operating voltage V〇FF rises. On the contrary, when (T) will follow L, the field's brewing declines, because the thermistor rises, so the resistance of the thumb will be known as the voltage V〇FF(T) will drop accordingly. Ff (D., because the rise of the operating power will cause the gate drive signal to rise, so the non-曰硗 low logic position 匕 non-daily 矽溥 film transistor voltage L with suppression of lightning, * 7 ΛΑ I < ; lower, and then the rise of the claws, to ensure that the liquid crystal display's positive A* hang 4 乍〇h multi-photograph 12, the 12th picture shows the system is the 柘 汲 汲 及 and the low button 躯 矾 之The high and low clamps are temperature-adjusted. The high logic level of the scan drive signal and the low logic level change before the 'voltages VON(1) and VqFF(t). ^;, do not rise with the operation T1 to the temperature T4 , operating voltage v〇N ( T ) : 〇 儿 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' Decrease V0砰(1) depending on the temperature rise, causing 1 operating voltage field cans; 201211972
. TW6361PA 的低邏輯位準Vgl上升為掃描驅動訊號G(T4)的低邏輯位 準gl4相反地’當溫度Tl下降至溫度丁5時,操作電 =〇N⑴係隨溫度下降而上升,造成掃描驅動訊號g(ti) 的门it輯位準Vgh上升為掃插驅動訊號G(T5)的高邏輯位 準Vgh5,而操作電壓v〇FF⑺係隨溫度下降而下降, 造成掃描驅動訊號G(T1)的低邏輯位準%下降為掃描驅 動祝號G(T5)的低邏輯位準vgi5。 # ^ 第二貫施例 5月參照第10圖,第10圖繪示係為依照第三實施例之 適應性電源電路之電路圖。前述第5圖繪示之適應性電源 電路226例如為第1 〇圖繪示之適應性電源電路9〇,且前 止第5圖繪示之溫度感測元件226a及電壓調整電路 例如為第10圖繪示之溫度感測元件90a及電壓調整電路 9〇b。溫度感測元件9〇a包括負溫度係數之熱敏電阻尺丁, Φ 而電壓調整電路90b包括缓衝器910、偏壓電路920、偏 廖電路930、箝位電路940、回授電路950、比較器960及 兔電幫浦 970(Charge Pump)。 回授電路950包括電阻R3及R4,並根據操作電壓 V〇N (τ)提供回授電壓FB。比較器根據緩衝器 之輪出電壓Vy及回授電壓FB輸出比較電壓Vc。充電幫 冰970根據參考電壓輸出操作電壓v〇N(T)。 偏髮電路920耦接至缓衝器91〇,並設定緩衝器91〇 之攻大輪出電壓Vy(max),以決定操作電壓γ〇Ν(τ)之最扣】The low logic level Vgl of the TW6361PA rises to the low logic level of the scan drive signal G(T4) gl4. Conversely, when the temperature T1 drops to the temperature of 丁5, the operating voltage = 〇N(1) rises with temperature, causing scanning. The gate signal level Vgh of the driving signal g(ti) rises to the high logic level Vgh5 of the sweep driving signal G(T5), and the operating voltage v〇FF(7) decreases as the temperature drops, resulting in the scan driving signal G (T1). The low logic level % drops to the low logic level vgi5 of scan drive designation G (T5). #^Second Embodiment Example Referring to Fig. 10 in Fig. 10, Fig. 10 is a circuit diagram showing an adaptive power supply circuit in accordance with the third embodiment. The adaptive power supply circuit 226 shown in FIG. 5 is, for example, the adaptive power supply circuit 9 第 shown in FIG. 1 , and the temperature sensing element 226 a and the voltage adjustment circuit shown in FIG. 5 are, for example, the 10th. The temperature sensing element 90a and the voltage adjusting circuit 9B are shown. The temperature sensing element 9A includes a negative temperature coefficient thermistor scale, Φ and the voltage adjusting circuit 90b includes a buffer 910, a bias circuit 920, a bias circuit 930, a clamp circuit 940, and a feedback circuit 950. , Comparator 960 and Rabbit Electric Pump 970 (Charge Pump). The feedback circuit 950 includes resistors R3 and R4 and provides a feedback voltage FB according to the operating voltage V〇N (τ). The comparator outputs a comparison voltage Vc based on the wheeling voltage Vy of the buffer and the feedback voltage FB. The charging help ice 970 outputs an operating voltage v〇N(T) according to the reference voltage. The skew circuit 920 is coupled to the buffer 91〇 and sets the attack voltage Vy(max) of the buffer 91〇 to determine the maximum value of the operating voltage γ〇Ν(τ).
201211972 IW6361PA 值。偏壓電路920包括定電流源II及電阻Rl,並提供偏 壓Vx至緩衝器910之電源供應端。其中,偏壓Vx=nxRi。 由於緩衝器91〇之電源供應端接收偏壓νχ,因此缓衝哭 910之最大輸出電壓Vy(max)等於偏壓νχ。故此,操作電 壓VON(T)之最大值等於㈣+急。偏壓電路93〇係輛接熱 敏電阻RT及緩衝器91〇。箝位電路940耦接至緩衝器9ι〇 之輸出端,並設定緩衝器910之最小輸出電壓Vy(min), 以決定操作電壓V0N(T)之最小值。舉例來說,當緩衝器 91〇之最小輸出電壓Vy(min)等於L24V,則操作電壓 ν〇Ν(τ}之最小值等於丨μ♦吾〉。當緩衝器w〇之輸出電壓 Vy介於1.24及Vx之間時,則緩衝器91〇之輪出電壓% 將隨I壓VNTC而改變,使得操作電壓v〇n(t)等於 ⑼G + f)。由於電壓VNTC會隨熱敏電阻RT而動態地調 整,因此操作電壓VON(T)將隨溫度動態調整,以確保液 晶顯示器的正作。此外,適應性電源電路9G還能^ -步地妓操作電壓侧⑺之最大值及最小值。 應性電源電路90雖以調整操作電屋201211972 IW6361PA value. The bias circuit 920 includes a constant current source II and a resistor R1 and provides a bias voltage Vx to the power supply terminal of the buffer 910. Among them, the bias voltage Vx=nxRi. Since the power supply terminal of the buffer 91 receives the bias voltage ν , the maximum output voltage Vy (max) of the buffering 910 is equal to the bias voltage ν χ . Therefore, the maximum value of the operating voltage VON(T) is equal to (4) + urgency. The bias circuit 93 is connected to the thermistor RT and the buffer 91A. The clamp circuit 940 is coupled to the output of the buffer 9ι and sets the minimum output voltage Vy(min) of the buffer 910 to determine the minimum value of the operating voltage V0N(T). For example, when the minimum output voltage Vy(min) of the buffer 91〇 is equal to L24V, the minimum value of the operating voltage ν〇Ν(τ} is equal to 丨μ ♦ I. When the output voltage Vy of the buffer w〇 is between When between 1.24 and Vx, the % of the pinch voltage of the buffer 91 will change with the I voltage VNTC, so that the operating voltage v〇n(t) is equal to (9)G + f). Since the voltage VNTC is dynamically adjusted with the thermistor RT, the operating voltage VON(T) will be dynamically adjusted with temperature to ensure the positive operation of the liquid crystal display. In addition, the adaptive power supply circuit 9G can also step the maximum and minimum values of the operating voltage side (7). The power supply circuit 90 is adjusted to operate the electric house.
If不MM , ^V〇N(T)為例說明,然 亚不偈限於此,適應性電源電 電壓v〇FFa> 調整操作 本發明雖然以上述多個實施例做铁 動訊號之高邏輯位準或低遴耝&淮& # ‘、、、,、要閘極驅 π敫…士 & 輯準能隨溫度變化而動態 δ周正’即在本發明的範圍之内。 201211972If not MM, ^V〇N(T) is taken as an example, and the present invention is not limited thereto, and the adaptive power supply voltage v〇FFa> adjustment operation. The present invention uses the above-described plurality of embodiments to make the high logic bit of the iron signal. Quasi or low 遴耝 & Huai &# ',,,,, 闸 驱 驱 敫 士 士 士 士 士 士 辑 辑 随 随 随 随 随 随 随 随 随 随 随 随 随 随 随 随 随 随 随 随 随 随 随 随 随 随 随 随 随201211972
• ,, TW6361PA 綜上所述,雖然本發明已以較佳實施例揭露如上,然 其並非用以限定本發明。本發明所屬技術領域中具有通常 知識者,在不脫離本發明之精神和範圍内,當可作各種之 更動與潤飾。因此,本發明之保護範圍當視後附之申請專 利範圍所界定者為準。 【圖式簡單說明】 第1圖繪示係為傳統非晶矽液晶顯示器之示意圖。 Φ 第2圖繪示係為非晶矽閘極驅動器140之方塊示意 圖。 第3圖繪示係為第N級移位暫存器之電路圖。 第4圖繪示係為第3圖繪示之訊號時序圖。 第5圖繪示係為依照本發明實施例之非晶矽液晶顯 示器之示意圖。 第6圖繪示係為依照第一實施例之適應性電源電路 之電路圖。 φ 第7圖繪示係為第一實施例對應之操作電壓隨溫度 變化之示意圖。 第8圖繪示係為依照第二實施例之適應性電源電路 之電路圖。 第9圖繪示係為第二實施例對應之操作電壓隨溫度 變化之示意圖。 第10圖繪示係為依照第三實施例之適應性電源電路 之電路圖。 第11圖繪示係為閘極驅動訊號之高邏輯位準隨溫度 201211972 TW6361PA * - 調整之示意圖。 第12圖繪示係為閘極驅動訊號之高邏輯位準及低邏 輯位準隨溫度調整之示意圖。 【主要元件符號說明】 10 .傳統非晶砍液晶顯不裔 2 0 :依照本發明貫施例之非晶碎液晶顯不為 110、210 .液晶面板 120、220 :控制電路板 122、222 :直流轉換器 124、224 :電位轉換器 130、230 :源極驅動器 140、240 :非晶矽閘極驅動器 226 :適應性電源電路 226a、60a、80a、90a :溫度感測元件 226b、60b、80b、90b :電壓調整電路 910 :缓衝器 920、930 :偏壓電路 940 :箝位電路 950 :回授電路 960 :比較器 970 :充電幫浦 Π、12 :定電流源 VON、VOFF :直流電壓 201211972TW6361PA In summary, although the invention has been disclosed above in the preferred embodiments, it is not intended to limit the invention. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a conventional amorphous germanium liquid crystal display. Φ Figure 2 shows a block diagram of an amorphous germanium gate driver 140. Figure 3 is a circuit diagram showing the Nth stage shift register. Figure 4 is a timing diagram of the signal shown in Figure 3. Fig. 5 is a view showing an amorphous germanium liquid crystal display according to an embodiment of the present invention. Fig. 6 is a circuit diagram showing an adaptive power supply circuit in accordance with the first embodiment. Fig. 7 is a view showing the operation voltage corresponding to the first embodiment as a function of temperature. Fig. 8 is a circuit diagram showing an adaptive power supply circuit in accordance with the second embodiment. Fig. 9 is a view showing the operation voltage corresponding to the second embodiment as a function of temperature. Fig. 10 is a circuit diagram showing an adaptive power supply circuit in accordance with the third embodiment. Figure 11 shows the high logic level of the gate drive signal with temperature 201211972 TW6361PA * - Adjustment diagram. Figure 12 is a schematic diagram showing the high logic level of the gate drive signal and the low logic level as a function of temperature. [Main component symbol description] 10. Conventional amorphous chopped liquid crystal display Atom 2 0: Amorphous broken liquid crystal according to the embodiment of the present invention is not 110, 210. Liquid crystal panels 120, 220: Control circuit boards 122, 222: DC converters 124, 224: potential converters 130, 230: source drivers 140, 240: amorphous gate drivers 226: adaptive power circuits 226a, 60a, 80a, 90a: temperature sensing elements 226b, 60b, 80b 90b: voltage adjustment circuit 910: buffer 920, 930: bias circuit 940: clamp circuit 950: feedback circuit 960: comparator 970: charging pump Π, 12: constant current source VON, VOFF: direct current Voltage 201211972
• TW6361PA VON(T)、V0FF(T):操作電壓 Vc :比較電壓• TW6361PA VON(T), V0FF(T): Operating voltage Vc: Compare voltage
Vy :輸出電壓Vy: output voltage
Vx :偏壓 VNTC :電壓 FB :回授電壓 CK1、CK2 :時脈訊號 STV :起始訊號Vx : Bias VNTC : Voltage FB : Feedback voltage CK1 , CK2 : Clock signal STV : Start signal
VSS :工作電壓 OUT】〜ουτΝ:閘極驅動訊號 SR]至SRN+1 :移位暫存器 Μ1〜M4、Q1、Q2 :電晶體 Τ、ΤΙ、Τ2、Τ3、Τ4、Τ5 :溫度VSS: Operating voltage OUT]~ουτΝ: Gate drive signal SR] to SRN+1: Shift register Μ1~M4, Q1, Q2: Transistor Τ, ΤΙ, Τ2, Τ3, Τ4, Τ5: Temperature
Rl、R2、R3、R4、R5 :電阻 RT :熱敏電阻Rl, R2, R3, R4, R5: Resistance RT: Thermistor
Vgh、Vgh2、Vgh3、Vgh4、Vgh5 :高邏輯位準 Vgl、Vgl2、Vgl3、Vgl4、Vgl5 :低邏輯位準Vgh, Vgh2, Vgh3, Vgh4, Vgh5: high logic level Vgl, Vgl2, Vgl3, Vgl4, Vgl5: low logic level
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103489388A (en) * | 2012-06-11 | 2014-01-01 | 联咏科技股份有限公司 | Gate driving device |
TWI464728B (en) * | 2012-05-30 | 2014-12-11 | Novatek Microelectronics Corp | Gate driving apparatus |
TWI709949B (en) * | 2019-12-16 | 2020-11-11 | 新唐科技股份有限公司 | Control circuit |
US11054849B2 (en) | 2019-07-12 | 2021-07-06 | Himax Technologies Limited | Source driver and output buffer thereof |
TWI741326B (en) * | 2019-07-26 | 2021-10-01 | 奇景光電股份有限公司 | Source driver and output buffer thereof |
-
2010
- 2010-09-13 TW TW99130932A patent/TWI433087B/en not_active IP Right Cessation
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI464728B (en) * | 2012-05-30 | 2014-12-11 | Novatek Microelectronics Corp | Gate driving apparatus |
US9397650B2 (en) | 2012-05-30 | 2016-07-19 | Novatek Microelectronics Corp. | Gate driving apparatus |
CN103489388A (en) * | 2012-06-11 | 2014-01-01 | 联咏科技股份有限公司 | Gate driving device |
CN103489388B (en) * | 2012-06-11 | 2016-12-14 | 联咏科技股份有限公司 | Gate driver |
US11054849B2 (en) | 2019-07-12 | 2021-07-06 | Himax Technologies Limited | Source driver and output buffer thereof |
TWI741326B (en) * | 2019-07-26 | 2021-10-01 | 奇景光電股份有限公司 | Source driver and output buffer thereof |
TWI709949B (en) * | 2019-12-16 | 2020-11-11 | 新唐科技股份有限公司 | Control circuit |
Also Published As
Publication number | Publication date |
---|---|
TWI433087B (en) | 2014-04-01 |
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