TW201211329A - Quartz glass crucible for pulling up silicon single crystal and production method therefor - Google Patents

Abstract

Disclosed is a quartz glass crucible used for pulling silicon single crystals and capable of efficiently suppressing liquid surface vibration when pulling silicon single crystals; also disclosed is a manufacturing method of said quartz glass crucible. The disclosed quartz glass crucible for pulling silicon single crystals grows silicon single crystals by bringing a seed crystal into contact with a silicon melt and performing pulling. Said crucible includes a crucible base body of a semitransparent quartz glass layer, and a transparent synthetic quartz glass layer formed on the inner walls of the crucible base body; said crucible further has a straight body portion open at the top, and a bottom portion formed in an arc shape on said straight body. A rough surface band region is provided on one portion of the surface of the straight body portion of the transparent synthetic quartz glass layer, and the region of the surface of the transparent synthetic quartz glass layer that is below the rough surface band region is smooth. The arithmetic mean roughness (Ra) of the rough surface band region is 2-9[mu]m, and the rough surface band region is provided such that the liquid surface of the silicon melt in an initial state is in contact with the rough surface band region.

Description

201211329 VI. Description of the Invention: [Technical Field] The present invention relates to a quartz glass crucible for use in a single crystal drawing and a method for producing the same. [Prior Art] Conventionally, a method called a so-called Jozraski method has been widely used for the production of a single crystal material such as a single crystal semiconductor material. In this method, a polycrystalline ruthenium is melted in a container, and a single crystal having the same crystal orientation is grown on the seed crystal while the inside of the molten bath enters the end of the seed crystal while rotating. The single crystal drawing container is generally melted in a quartz glass crucible by using a quartz glass crucible, and a vibration wavefront is generated on the surface of the crucible melt when the single crystal is drawn. The problem that the bismuth crystal is not bonded to the ruthenium melt and the crystallinity of the ruthenium single crystal is disturbed is a frequent occurrence. One of the reasons for this is that the inner surface of the quartz glass crucible is formed as a synthetic quartz glass layer. When the inner surface of the quartz glass crucible is formed into a synthetic quartz glass layer, since the synthetic quartz glass layer is substantially free of bubbles, the liquid surface vibration is likely to occur when the single crystal is drawn. In particular, in recent years, as the single crystal of bismuth has become 8 吋 or more, the quartz glass crucible has also become a large-caliber liquid level vibration problem. In order to solve the problem of the liquid surface vibration as described above, for example, Patent Literatures 1 to 4 disclose a technique for suppressing 'liquid surface vibration by roughening the inner surface of the crucible.-5-201211329 However, the inventors of the present invention have As a result of the active investigation, it was found that even when the surface was roughened, there was a case where the liquid surface vibration suppression effect was poor, and thus the alkane cost was invented. [Prior Art Document] [Patent Document 1] Patent Document 1: JP-A-2000-72594 Patent Document 2: JP-A-2000-327478 Patent Document 3: JP-A-2005-272178 Patent Document 4: JP-A-2005-320241 [Problem to be Solved by the Invention] The present invention has been made in view of the above circumstances, and an object thereof is to provide a quartz glass crucible for single crystal drawing which can effectively suppress liquid level vibration of a single crystal pulling delay and a method for producing the same . [Means for Solving the Problem] In order to solve the above-mentioned problems, the quartz glass crucible for the single crystal drawing of the present invention is used for the single crystal drawing of the single crystal in which the seed crystal is brought into contact with the tantalum melt and drawn to form a single crystal. a quartz glass crucible comprising a crucible base of a translucent quartz glass layer and a transparent synthetic quartz glass layer formed on the inner wall surface of the crucible base body, and having a vertical body portion opened at an upper end portion and the vertical body portion

S -6- 201211329 is formed in an arc-shaped bottom portion, and a part of the surface of the vertical body portion on the surface of the transparent synthetic quartz glass layer is provided with a strip-shaped rough surface region, and the transparent synthetic quartz is located below the strip-shaped rough surface region. The lower portion of the surface of the glass layer is a smooth surface, and the arithmetic mean roughness (Ra) of the strip-shaped rough surface region is 2 to 9 μm, and the strip-shaped rough surface region is set to be a liquid for causing the ruthenium melt in an initial state. The surface is within the range of the strip-shaped rough surface region. In the present specification, the arithmetic mean roughness (Ra) means the arithmetic mean roughness described in JIS B060 1. The strip-shaped rough surface region means that a part of the surface of the transparent synthetic quartz glass layer is formed into a strip-shaped rough surface region. The liquid level in the initial state of the crucible melt means a liquid surface in a state in which the crucible melt before the single crystal drawing is filled in the quartz glass crucible. Further, in the present invention, the liquid surface vibration of the single crystal pulling delay means that the seed crystal is bonded to the tantalum melt, and the liquid surface vibration is seen between the formation of the shoulder portion of the single crystal by the seed crystal necking. The distance between the strip-shaped rough surface region and the end portion of the quartz glass crucible may be appropriately set according to the diameter of the quartz glass crucible or the manufacturing conditions, but it is necessary to set the strip-shaped rough surface region to melt the foregoing crucible. The liquid level position of the liquid in the initial state is in the range of the aforementioned strip-shaped rough surface area. In the strip-shaped rough surface region, the liquid level in the initial state of the crucible melt is at least ± 10 mm in the center, and it is preferable that the maximum width from the liquid surface toward the bottom is 50 mm or less. Further, the strip-shaped rough surface region is preferably formed by blast treatment using quartz powder. As for the aforementioned quartz powder, synthetic quartz powder or high-purity 201211329 natural quartz powder is used. Further, the arithmetic mean roughness (Ra) of the region below the smooth surface is preferably Ra: 0.09 #m or less, more preferably Ra: 〇.〇3; zm or less. The aforementioned blast treatment may be suitably dry or wet. In the blast treatment, the inner surface of the quartz glass crucible is roughened by blowing quartz powder by compressed air or centrifugal force. As for the aforementioned blast treatment, it may be a dry blast which blows quartz powder, or a wet blast which blows quartz powder together with a fluid such as water. As for the quartz powder, it is preferred that the weight of the quartz powder having a particle diameter of from 106 μm to 355/im is 80% or more. The particle size can be measured and screened using a sieve. The method for producing a quartz glass crucible for a single crystal drawing of the present invention, the method for producing a quartz glass crucible for single crystal drawing in which a seed crystal is contacted with a tantalum melt and drawn to form a single crystal, The utility model is characterized in that the quartz glass crucible comprises a crucible base of a translucent quartz glass layer and a transparent synthetic quartz glass layer formed on the inner wall surface of the crucible base body, and has an upper end opening. The surface of the vertical body portion and the bottom portion of the vertical body portion are formed in an arc shape, and one of the surfaces of the transparent synthetic quartz glass layer is provided with a strip-shaped rough surface region, and the transparent portion is lower than the strip-shaped rough surface region. The lower surface of the surface of the synthetic quartz glass layer is a smooth surface, and the arithmetic mean roughness (Ra) of the strip-shaped rough surface region is 2 to 9 μm, and the strip-shaped rough surface region is set such that the tantalum melt is in an initial state. The liquid level position is within the range of the aforementioned strip-shaped rough surface area. Further, the strip-shaped rough surface region is preferably made by using a blast furnace of quartz powder.

S -8 - 201211329 was formed. The arithmetic mean roughness (Ra) of the smooth surface region is preferably Ra: 0.09 μm or less, more preferably Ra: 0 03 μmη or less. Further, the aforementioned blast treatment is preferably dry or wet. Further, the caliber of the crucible to be used in the present invention is not particularly limited, and crucibles of various calibers can be used. [Effect of the Invention] According to the present invention, it is possible to provide a quartz glass crucible for single crystal drawing which can effectively suppress the occurrence of liquid surface vibration during the drawing of a single crystal, and a method for producing the same. Further, according to the present invention, it has a significant effect of shortening the operation time and improving the yield. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings, but these descriptions are merely illustrative and should not be construed as limiting. FIG. The drawing is made of quartz glass crucible. Quartz glass crucible 10 for single crystal drawing is a quartz glass crucible for single crystal drawing, which is made by contacting and growing a seed crystal with a crucible melt, and comprises a translucent quartz glass layer crucible The base body 12 and the transparent synthetic quartz glass layer 14 formed on the inner wall surface of the can body base 12 have a vertical body portion 24 in which the upper end portion 22 is opened, and a bottom portion 26 in which the vertical body portion 24 is formed in an arc shape. One of the vertical body portions 201211329 24 of the transparent synthetic quartz glass layer 14 is provided with a strip-shaped rough surface region 18, and the lower transparent synthetic quartz glass layer surface lower portion 28 is disposed below the strip-shaped rough surface region 18 Smooth surface. Further, the symbol 20 is a concave portion of the strip-shaped rough surface region 18. The arithmetic mean roughness (Ra) of the strip-shaped rough surface region 18 is 2 to 9 μm, and the strip-shaped rough surface region 18 is provided so that the liquid surface 16 of the first molten metal in the initial state and the strip-shaped rough surface region 18 are provided. contact. In the example of Fig. 1, the width W of the strip-shaped rough surface region 18 can be the liquid level 16 in the initial state of the melt in the middle portion. Further, the distance d from the upper end portion 22 to the strip-shaped rough surface region 18 is not particularly limited because it can be changed depending on various manufacturing conditions such as the crucible diameter or the amount of the crucible melt. The strip-shaped rough surface region 18 may be provided so that the liquid surface 16 in the initial state of the crucible melt contacts the strip-shaped rough surface region 18 so as to adjust the distance d. Further, the arithmetic mean roughness (Ra) of the lower region which is the smooth surface is preferably Ra: 0.09 μm or less, more preferably Ra: 0.03 μm or less. Further, the upper surface region 30 of the transparent synthetic quartz glass layer above the strip-shaped rough surface region 18 may be a rough surface or a smooth surface, but it is considered to be in contact with the polycrystalline germanium of the raw material. When the quartz piece is peeled off, it is better to smooth the surface. The example of the figure shows an example in which the above-described area 30 and the lower area 28 are smooth surfaces. In this manner, the strip-shaped rough surface region 18 is provided so that the liquid surface 16 in the initial state of the tantalum melt contacts the strip-shaped rough surface region 18, so that the occurrence of the liquid surface vibration of the single crystal pulling delay can be suppressed. Example

The following is a more detailed description of the embodiments of the present invention. However, the invention is not limited to the embodiments, and various modifications may be made without departing from the spirit of the invention. (Example 1) A natural quartz powder having a particle diameter of 50 to 500 μm was supplied into a mold having a rotating inner diameter of 570 nm, and a molded body formed of a powder layer having a thickness of 25 mm was molded and heated from the inside of the molded body by arc discharge. At the same time, a synthetic quartz glass powder having an OH concentration of 40 ppm was supplied at a rate of 100 g/min in a high-temperature atmosphere, and a bubble-free transparent glass layer was formed over the entire inner surface region at a thickness of 1 to 3 mm. For the quartz glass crucible having a diameter of 5 5 5 to 560 mm which was melted and cooled, the upper end was cut to have a height of 3 70 mm, and 20 quartz glass crucibles were produced. In the quartz glass crucible, the inner surface of the vertical body portion is only a strip-shaped rough surface region having a distance d from the upper end portion of 60 mm and a width of 40 mm (that is, a range from 60 mm to 100 mm from the upper end portion). The air is sprayed and roughened to make 1 quartz glass crucible. In the roughening treatment, the upper region and the lower region which are not subjected to the roughening treatment are masked in advance using a masking tape. The roughening treatment is performed such that the upper end portion of the quartz glass crucible is inverted to the inner wall surface. The ratio of the particle size distribution of the high-purity natural quartz powder used as the ejected material was </>l〇6ym~355#m, which was 87% by weight. The surface roughness of the strip-shaped rough surface region of each crucible was measured, and as a result, Ra: 3.72 to 3.88/z m' and the Ra of the upper region and the lower region were 0.0 0 to 0.02 vm, respectively, 〇·〇〇~〇.〇 2#m. After the quartz glass crucible was filled with poly-l-11 - 201211329 矽140kg, after the single crystal drawing was carried out under the operating condition A, all the crucibles did not show the conventional bonding of the seed crystal and the crucible melt, and the seed was passed through The crystal neck and the vibration of the molten metal surface which are seen during the formation of the shoulder of the single crystal are automatically operated, and it is confirmed that the operation time is shortened and the yield of the single crystal is improved. The results are shown in Table 1. Further, in Tables 1 and 2, the range of the blasting treatment conditions indicates the position of the strip-shaped rough surface region subjected to the blasting treatment, that is, the distance d from the upper end portion to the condensed d + strip-shaped rough surface region. Width W. In the present specification, the term "operation time" refers to the time required from the start of the drawing of the single crystal to the end of the drawing. In Table 1, the operation time rate is a ratio when the operation time of Comparative Example 1 of the prior art is set to 1, for example, the operation time rate of the first embodiment is the operation time of the first embodiment + comparative example. The operation time of 1 = the operation time rate of Example 1 was calculated. The lower the operating time ratio, the automatic operation is not required by the operator's manual adjustment, etc., and the operation time can be shortened. In addition, the yield is a ratio when the number of finished products of the single crystal of Comparative Example 1 of the prior art is set to 1. For example, the yield of the first embodiment is calculated from the number of finished products of the first embodiment + the number of finished products of the comparative example 1 = the yield of the first embodiment. The higher the yield, the higher the number of finished products. (Example 2) The discharge processing conditions of Example 1 were changed, and the roughening treatment of the strip-shaped rough surface region in the range of 50 mm to 1 l〇mm from the upper end portion was performed. In the roughening treatment, the upper region and the lower region are not masked by masking tape without roughening. Roughening treatment

S -12- 201211329 The method of inverting the quartz glass crucible is performed on the inner wall surface. The results are shown in Table 1. As shown in Table 1, no liquid surface vibration occurred. (Example 3) The roughing treatment of the strip-shaped rough surface region in the range of 6 mm to 110 mm from the upper end portion was carried out by a wet discharge treatment instead of the suction air blowing. In the roughening treatment, the upper region and the lower region are not masked with a masking tape before the roughening treatment. The roughening treatment is performed such that the upper end portion of the quartz glass crucible is inverted to the inner wall surface. Further, the sprayed material was used for the same natural quartz powder as that of the user in the air discharge of Example 1. The results are shown in Table 1. As shown in Table 1, the seed crystal was bonded to the ruthenium melt, and the seed crystal was necked until the liquid surface vibration did not occur during the formation of the shoulder of the single crystal. (Example 4) The liquid was roughened in the upper portion of the belt-like rough surface region (range of 60 mm to 100 mm from the upper end portion). Only the lower area is shielded with masking tape, and the upper area is not shielded. The results are shown in Table 1. As shown in Table 1, no liquid surface vibration occurred. Further, the roughening treatment is carried out without inverting the quartz glass crucible. The arithmetic mean roughness (Ra) of the lower portion of the masking region becomes low, and the arithmetic mean roughness (Ra) of the region where the masking is not performed becomes relatively high. (Embodiment 5) -13-201211329 A wet discharge process is performed instead of the air-exhausted air discharge, and the quartz glass crucible is not inverted, and the mask-like rough surface in the range of 60 mm to 1 10 mm from the upper end portion is not performed. The roughening of the area. Further, the discharge material was used for the natural quartz powder of the same user as that of the air ejection of Example 1. The results are shown in Table 1. As shown in Table 1, the seed crystal was bonded to the tantalum melt, and the seed crystal was necked until the liquid surface vibration did not occur during the formation of the shoulder of the single crystal. Although the masking was not performed, the arithmetic mean roughness (Ra) in the above region and the lower region became low. (Example 6) The roughening treatment of the strip-shaped rough surface region in the range of 60 mm to 1 10 mm from the upper end portion was performed by a wet discharge treatment to invert the state of the quartz glass crucible to the inner wall surface. Further, the sprayed material was used for the natural quartz powder of the same user as that of the air discharge of Example 1. But no shading. The results are shown in Table 1. As shown in Table 1, no liquid surface vibration occurred. In the same manner as in the first embodiment, the state in which the quartz glass crucible is inverted is performed on the inner wall surface in such a manner that the end portion is turned downward, and the arithmetic mean roughness (Ra) of the lower portion becomes low. The arithmetic mean roughness (Ra) becomes higher than the arithmetic mean roughness (Ra) of the lower region. (Comparative Example 1) A natural quartz powder having a particle diameter of 50 to 500 μm was supplied into a mold having a rotating inner diameter of 570 nm, and a molded body of a powder layer having a thickness of 25 mm was molded, and heated from the inside of the molded body by arc discharge. Melting and at the same time at its height

S -14- 201211329 A synthetic quartz glass powder having a 〇H concentration of 40 ppm was supplied in a temperature of 100 g/min in a warm atmosphere, and a bubble-free transparent glass layer was formed over the entire inner surface region in a thickness of 1 to 3 mm. For the quartz glass crucible having a diameter of 5 5 5 to 560 mm which was melted and cooled, the upper end was cut to have a height of 3 70 mm, and 20 quartz glass crucibles were produced. For the above 10, after operating the condition A (filling 140 kg of polycrystalline germanium), after the single crystal drawing, in any case, the seed crystal is bonded to the germanium melt, and the seed crystal is necked until the sheet is pressed. During the period in which the shoulder of the crystal begins to form (the seed crystal is formed into the shoulder portion), it vibrates on the molten metal surface, so it cannot be operated automatically, because the operator must perform manual adjustment, and the operation time is caused by the initial trouble. The length is increased, and as a result, the yield of single crystals is also low. Moreover, the inner surface roughness of the crucible before use is measured as before, and the whole area is the crucible shown in Table 1. After the initial liquid level position at the start of the crucible measurement operation after use, the average is the upper end portion. 74mm (maximum 78mm, minimum 72mm), as shown in Table 1, liquid level vibration occurs. (Comparative Example 2) The same procedure as in Example 1 was carried out except that Ra of the strip-shaped rough surface region was changed. In the roughening treatment, the region and the lower region which have not been subjected to the roughening treatment are masked in advance using a masking tape. The roughening treatment is performed on the inner wall surface in a state where the quartz glass crucible is inverted with the upper end portion facing downward. The results are shown in Table 1. The liquid level vibration occurred as shown in Table 1. (Comparative Example 3) -15-201211329 Band-shaped rough surface region (range of 60 mm to 100 mm from the upper end portion), upper portion above the strip-shaped rough surface region, and lower region than the strip-shaped rough surface region All of the roughening treatments were carried out as shown in Table 1. That is, the same as in the first embodiment except that the inner surface of the transparent synthetic quartz glass layer was completely roughened. The results are shown in Table 1. As shown in Table 1, although the liquid surface vibration did not occur, in particular, the vertical body portion of the crucible was deteriorated over the R portion (bending portion) or the bottom portion of the bottom portion, and the number of finished products was greatly lowered. (Comparative Example 4) The Ra of the strip-shaped rough surface region was changed, and the roughening treatment of the strip-shaped rough surface region in the range of 50 mm to 110 mm from the upper end portion was performed. At the time of the roughening treatment, the upper and lower regions are not subjected to the roughening treatment, and the tape is masked in advance. In the roughening treatment, the state in which the quartz glass crucible is inverted is performed on the inner wall surface in such a manner that the upper end portion faces downward. The results are shown in Table 1. As shown in Table 1, although the liquid surface vibration did not occur, since the quartz sheet was peeled off from the treated surface of the rough surface treatment, the crystal was easily confused, and the operation time became long.

S -16- 201211329

-17-201211329 (Example 7) The roughening treatment of the strip-shaped rough surface region in the range from the upper end portion 1 l 〇 mm to 140 mm was performed. Change the Ra of the strip-shaped rough surface area, change the liquid level position, and carry out the single crystal drawing with the single crystal drawing condition operating condition B (filling 1 〇〇kg polycrystalline germanium). In the roughening treatment, the upper region and the lower region which are not subjected to the roughening treatment are masked in advance using a masking tape. The roughening treatment is performed by inverting the quartz glass crucible in such a manner that the upper end portion faces downward to the inner wall surface. The results are shown in Table 2. As shown in Table 2, no liquid level vibration occurred. In Table 2, the operation time ratio is a ratio when the operation time of Comparative Example 5 of the conventional example is set to 1, for example, the operation time rate of the embodiment 7 is the operation time of the embodiment 7 + the comparative example 5 The operation time = the operation time rate of the seventh embodiment is calculated. The lower the operation time rate is, the automatic operation or the like is not required by manual adjustment by the operator, and the operation time can be shortened. The yield is also a ratio when the number of finished products of the single crystal of Comparative Example 5 of the prior art is set to 1. For example, in the case of the yield of Example 7, the number of finished products of Example 7 + the number of finished products of Comparative Example 5 = the yield of Example 7 was calculated. The higher the yield, the higher the number of finished products. (Example 8) The width W of the strip-shaped rough surface region was roughened in a wider range than in the seventh embodiment (the range from the upper end portion to the range of 1 l〇mm to 2 50 mm). In the roughening treatment, the upper region and the lower region are not masked with a masking tape. Roughening treatment with the upper end facing down

In the manner of S -18- 201211329, the state in which the quartz glass crucible is inverted is performed on the inner wall surface. The results are shown in Table 2. As shown in Table 2, no liquid level vibration occurred. (Example 9) As shown in Table 2, in addition to Ra of the strip-shaped rough surface region, the upper portion is higher than the strip-shaped rough surface region and lower than the strip-shaped rough surface region. The same procedure as in Example 7 was carried out except that the Ra was 0.03 to 0_09, respectively, and the smooth surface was processed. In the roughening treatment, the upper region and the lower region are not masked by masking tape without roughening. In the roughening treatment, the state in which the quartz glass crucible is inverted is performed on the inner wall surface in such a manner that the upper end portion faces downward. The results are shown in Table 2. As shown in Table 2, no liquid level vibration occurred. (Comparative Example 5) The remaining 10 in the quartz glass crucible prepared in Comparative Example 1 was subjected to a single crystal pulling operation under operating condition B (same filling of 1 〇〇kg) to melt the seed crystal and the crucible. The liquid is bonded, the seed is necked, and the period from the start of the formation of the shoulder of the single crystal (the seed crystal to the shoulder is formed) vibrates on the molten metal surface, so it cannot be operated automatically, only because it must be operated by the operator. Manual adjustment "The operation time is prolonged due to the initial troubles, and as a result, the yield of single crystal is also low. In addition, the inner surface roughness of the crucible before use is measured as before, and the whole area is the crucible shown in Table 2. After the initial liquid level position at the start of the crucible measurement operation after use, the average is the upper end portion. 124 mm (maximum 127 mm, minimum 122 mm), liquid level -19-201211329 vibration occurred as shown in Table 2 (Comparative Example 6) The same procedure as in Example 7 was carried out except that Ra of the strip-shaped rough surface region was changed. The results are shown in Table 2»The liquid level vibration occurred as shown in Table 2. (Comparative Example 7) The roughening treatment of the strip-shaped rough surface region in the range of 60 mm to 100 mm from the upper end portion was carried out, and the same crucible as in Example 1 was used, and the liquid surface position of the crucible melted on the strip-shaped rough surface. In the state outside the area, single crystal pulling is performed. In the case of the roughening treatment, the upper surface and the lower portion are not subjected to the roughening treatment, and the masking tape is masked in advance. The roughening treatment system is used to reverse the quartz glass crucible. The wall is carried out. The results are shown in Table 2. The liquid level vibration occurs as shown in Table 2.

S -20- 201211329

褂ng OI ΙΟ ο 卜σ> (Ο σ> can speak PQ s? csi 00 σ> 00 CO 00 ο 00 〇> S 〇ο ο ο mgm Μ 聒m mm 擗mg 璨Μ Forged 麒 E c Ε c Ε c .Ε C Ε c Ε cu CC gc C3 c Ε5 C· s C ΙΟ CVJ Μ© •Γ»T··mm 盟·Ν ) 1〇eg ? CO CM i IP CSI ) CSJ CM l CM CM i CM OJ Charge I 1------ 100kg 100kg 100kg 100kg 100kg 100kg Lower Zone I 0.00-0.02 0.00~0.02 0.03 ~0.09 0.00-0.02 0.00~0.02 0.00-0.02 yx (2 η m 豳m csi i < 〇l (D (〇csi is 0 1 S 0 1 s to lm S ms csi α> c6 CM CO oi oo 5 ds < 〇m Μ g S _g 3 S sm ΐ5ϋ 插-Μ c> ioo ο l ο ο ο 0 1 so 0 1 od c> l O o 〇· l 〇d E c Ε CE c E c E awake o CS CSI comso key \ ι l T mil wmor — ο or — T· ~~s 壊m<1 W um 卜 00 〇> m CO 闺镒 闺镒 Ttttf* 镒镒IK in Ιϋ J-3 JA -21 - 201211329 [Simplified illustration] Figure 1 In the invention, a partial cross-sectional view of a quartz glass crucible for single crystal drawing is carried out. [Explanation of main component symbols] 10: Quartz glass crucible for single crystal drawing of the present invention 1 2: crucible base 14: transparent synthetic quartz glass Layer 1 6 : liquid level position of the bismuth melt in the initial state 1 8 : strip-shaped rough surface area 20 : recess 22 : upper end portion 24 : vertical body portion 26 : bottom portion 2 8 : lower portion 3 0 : upper region d: self The distance from the upper end to the strip-shaped rough surface W: the width of the strip-shaped rough surface area

S -22-

Claims (1)

201211329 VII. Patent application scope: 1. A quartz glass crucible for 矽 single crystal drawing, which is characterized in that the seed crystal is contacted with the lanthanum melt and drawn to grow 矽 single crystal 矽 single crystal drawing quartz a glass crucible comprising a crucible base of a translucent quartz glass layer and a transparent synthetic quartz glass layer formed on the inner wall surface of the crucible base, having a vertical body portion having an upper end opening and being formed in the vertical body portion a portion of the surface of the vertical body portion of the transparent synthetic quartz glass layer is provided with a strip-shaped rough surface region, and a lower portion of the surface of the transparent synthetic quartz glass layer is disposed below the strip-shaped rough surface region. a smooth surface, wherein the arithmetic mean roughness (Ra) of the strip-shaped rough surface region is 2 to 9 μm, and the strip-shaped rough surface region is provided such that the liquid surface of the crucible melt in an initial state is in contact with the strip-shaped rough surface region . 2. The quartz crystal glass of the single crystal drawing of the first aspect of the patent application is in which the aforementioned strip-shaped rough surface region is formed by the blast treatment using quartz powder. 3. For the single-crystal drawing quartz glass pan according to item 2 of the patent application scope, the aforementioned blast treatment is dry or wet. 4. The quartz glass crucible for single crystal drawing according to any one of claims 1 to 3, wherein the arithmetic mean roughness (Ra) of the lower portion is 〇. 9 μm or less. 5. A method for producing a quartz glass crucible for single crystal drawing, which is a single crystal of a seed crystal which is contacted with a crucible melt and drawn to form a single crystal. -23-201211329 A quartz glass crucible for drawing A method for manufacturing a pot, comprising: fabricating a quartz glass crucible comprising a crucible base of a translucent quartz glass layer and a transparent synthetic quartz glass layer formed on the inner wall surface of the crucible base, and a vertical body portion having an upper end portion and a bottom portion formed in an arc shape on the vertical body portion, and a portion of the surface of the vertical body portion of the surface of the transparent synthetic quartz glass layer is provided with a strip-shaped rough surface region, and The lower surface of the surface of the transparent synthetic quartz glass layer further below the strip-shaped rough surface region is set as a smooth surface, and the arithmetic mean roughness (Ra) of the strip-shaped rough surface region is 2 to 9 μπι, and the strip-shaped rough surface region is set to The liquid surface in the initial state of the tantalum melt is brought into contact with the strip-shaped rough surface region. 6. The method for producing a single crystal drawing quartz glass according to the fifth aspect of the patent application, wherein the strip-shaped rough surface region is formed by blast treatment using quartz powder. 7. The method for producing a quartz glass pan for single crystal drawing according to item 6 of the patent application, wherein the blast treatment is dry or wet. The method for producing a quartz glass pan for single crystal drawing according to any one of claims 5 to 7, wherein the arithmetic mean average slit of the lower region (R 〇 is 0.09 μm or less. S - twenty four-