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TW201207139A - Bimetallic rotary target - Google Patents

Bimetallic rotary target Download PDF

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Publication number
TW201207139A
TW201207139A TW100121772A TW100121772A TW201207139A TW 201207139 A TW201207139 A TW 201207139A TW 100121772 A TW100121772 A TW 100121772A TW 100121772 A TW100121772 A TW 100121772A TW 201207139 A TW201207139 A TW 201207139A
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TW
Taiwan
Prior art keywords
metal
target
inserts
tube
insert
Prior art date
Application number
TW100121772A
Other languages
Chinese (zh)
Inventor
Eugene Y Ivanov
Eduardo Del-Rio
Original Assignee
Tosoh Smd Inc
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Publication date
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Publication of TW201207139A publication Critical patent/TW201207139A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/342Hollow targets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3426Material
    • H01J37/3429Plural materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A bimetallic rotary target formed of a first metal and a second metal for use in a sputtering apparatus. The rotary target including a target tube having a plurality of grooves or apertures formed therein. An insert being positionable within each of the grooves or apertures. The inserts including a locking mechanism that protrudes from the side surface of the insert, wherein the locking mechanism is configured to contact the surface defining the grooves or apertures to secure the inserts within the target tube. Subsequently HIPing, CIPing, electron beam welding, ultrasonic welding, mechanical fixture fit, or sintering integrally attaches the inserts to the target tube.

Description

201207139 六、發明說明: 【相關申請案之交互參考】 本申凊案根據美國35 U.S.C 119(e)條款主張2〇1〇年6 月23曰提申之美國暫時專利申請案序號第61/398,273號之 優先權優勢。 【發明所屬之技術領域】 本發明大體上關於濺鍍靶材,且更特別地,關於濺鍍 沉積法所使用的雙金屬旋轉靶材。 【先前技術】 使用濺錄輕材將例如金屬塗佈層或陶瓷塗佈層的塗佈 層沉積於例如玻璃或痩長彈性基板的大面積基板上係為熟 知技術》 濺鍍塗佈法典型地稱之為放電式製程’其係實施於至 2氣體存在的真空室中。典型地,鍍設備包含—真 空室、-電源、一陽極、及包含用以在一基板上沉積一金 屬層所使用的材料的一或更多陰極靶材。當施加一電位至 該陰極乾材日夺,相鄰於該乾材表面的氣體形成一電衆,其 轟擊該靶材而引起該靶材的材料微粒自該靶材中產生移 位、射出或濺出。自該靶材濺出的材料典型地接觸一基板, 因而阢積在該基板上。不斷接觸並沉積在該基板上的靶材 録例在該基板上建立起-塗佈或塗層。當—錢製程被 實施於存在有與该靶材作用的氣體時,該靶材及該作用氣 4 201207139 體的副產品形成於該基板上,用以形成不同於該原始靶材 的塗層。不同濺锻靶材類型可被使用於本塗佈製程(例如, 平面靶材、旋轉式圓柱靶材等等)。磁電管式濺鍍法係習知 技術中常使用的這類濺鍍範例之一。 圓柱磁電管式濺鍍法特別適用於塗佈三維複合物件, 例如,切割工具、生醫除冰裝置、光纖之類所使用口的那些, 其中,該基板係位$—圓柱靶材内。圓柱磁電管式濺鍍裝 置係為那些熟知此項技術之人士所熟知。 第1圖說明一傳統圓柱磁電管式濺鍍裝置實施例。該 設備包含執行一濺鍍製程的真空室2的金屬壁丨。一圓柱旋 轉乾材3係由位在該旋轉把材3的每—個末端的托架5所 支樓以使該乾材可旋轉靠近—軸7。透過1體供應器8供 應氣體至該騎室中,且透過至少—真出該祕 室内壓至-小於大氣的壓力。在該旋轉乾# 3旋轉時,例 如-玻璃基板類的基板9係透過滾筒或雷同者(未顯示)移 動至該㈣3下方…電毁係藉由-電源供應器12來施加 電壓至该濺锻乾材3而產生於該真空官 再工至2内,該濺鍍靶 材3相對於可接地的牆壁1或 ^ ^ J有具有一負電荷。該電 衆係疋位相鄰於絲材的⑽區。在料材上㈣鐘區可 藉由位於該旋轉Μ 3内或任何其它合適位置處的至少一 磁鐵4來控制。在來自該旋_3的材料自其中, 該些分裂微粒接觸該基板9的上表 製程以在該基板9的表面上產生,連續操作本 座生塗層、塗佈或材料。 在第1圖所示的濺鑛設備產生-均句沉積材料層時, 5 201207139 存在有可在一基板上產生一雙金屬或多金屬層的旋轉靶材 需求。 【發明内容】 在本發明一態樣中,一種雙金屬旋轉靶材被提供。該 雙金屬旋轉靶材包含由一第一金屬所構成的圓柱靶材管。 該乾材管具有—第__末端、—相對第〒末端、延伸於該第 及第一末端之間的一外表面、及正交於該第一及第二末 端進行延伸的一中心軸。該雙金屬旋轉靶材也包含透過該 靶材管的外表面所形成的複數個孔隙。該雙金屬旋轉靶材 進一步包含由不同於該第一金屬的第二金屬所構成的複數 個插入物。该複數個插入物之一係置於該複數個孔隙中的 母個之内’其中’該些插入物中的每一個包含一自其中 投射出的鎖定機制。該鎖定機制接觸該孔隙以栓緊其内的 插入物。 在本發明另一態樣中,一種製造雙金屬旋轉靶材的方 法被提供°該方法包含提供由一第一金屬所構成的圓柱靶 材管。該靶材管具有—第一末端、一相對第二末端、延伸 於該第及第一末端之間的一外表面、及正交於該第一及 第一末端進行延伸的一中心軸。該方法進一步包含透過該 輕材f的外表面形成複數個孔隙。該方法也包含放置一插 入物至該複數個孔隙中的每一個。該些插入物係由不同於 該第—金屬的第二金屬所構成。該些插入物中的每一個包 含一自其中投射出的鎖定機制。該方法也包含整合地附接 201207139 該些插入物至該乾材管β 本發明優勢對那些熟知此項技術之人士會自已藉由圖 不所顯示及描述的本發明實施例的下列說明中變得顯而易 見。在實現時’本發明可為其它及不同實施例,且它的細 節可在各方面上進行修改。 【實施方式】 參考至苐2-4圖’一雙金屬旋轉乾材20的示範實施例 被顯示。該旋轉靶材20係具有實質上圓剖面狀的一實質上 圓柱的瘦長件。該旋轉靶材20包含一第一末端22及一相 對第二末端24。在一實施例中,該第一及第二末端22、24 係實質上平面的。在另一實施例中,該第一及第二末端22、 24具有由該末端托架5(第1圖)所承接的類步階架構。一熟 知此項技術之人士應了解到,該第一及第二末端22、24可 以該末端托架5所足以承接的任何方式來架構以旋轉靠近 —中心轴26。 在實細•例中,該方疋轉勒> 材20係形成一具有同心層的 圓柱管。在第3-4圖所示實施例中,該旋轉靶材2〇包含一 支撐管28、一靶材管30及操作性地連接至該靶材管3〇的 至少一插入物32。該支撐管28可由足以提供對該靶材管 3〇的支撐且在濺鍍製程期間實質上不作用或惰性的任何材 料所構成。在另一實施例中,如第2圖所示,所形成的旋 轉靶材20不具有一支撐管28。該靶材管30係由—第—金 屬所構成,且該至少一插入物32係由不同於該靶材管3〇 201207139 的第一金屬的第二金屬所構成。任何數量的插入物可被使 用以在該中心軸26附近形成該第二金屬圖案。例如,第2 圖和第4圖說明靠近該中心軸的一連續螺旋圖案,且一熟 知此項技術之人士應了解到任何數量的插入物3 2可被使用 以形成該螺旋圖案。 如第3圖所示,該螺旋圖案的插入物3 2相對於該中心 軸26形成一角度β。在所示實施例中,該角度0約為45度, 但一熟知此項技術之人士應了解到該些插入物32的對準角 度Θ相對於該中心軸26可大於〇度且小於18〇度。在一實 施例中,單一插入物32係操作性地附接至該靶材管go以 形成該螺旋圖案。在另一實施例中,複數個插入物3 2係緊 鄰於彼此來定位以在該靶材管30上形成該螺旋圖案。其它 圖案的插入物32可如下所述地產生並操作性地附接至該靶 材管30。在一實施例中,該些插入物32的寬度w實質上 係相同。在另一實施例中,該些插入物32的寬度w視該旋 轉靶材20中所要求的金屬比值而變。該插入物32的相舞 環間的距離沿著該旋轉靶材20的整個縱向長度實質上係才丨 同。藉由維持該第二金屬一致的間隔,產生的沉積層應, 質上在厚度及合成物兩者上係一致。 如第3圖所示,該支撐管28及該靶材管3〇係同心圓 式地對準。在一實施例中,該支撐管28及該靶材管3〇彼 此間係互相m接。在另—實施財,該㈣f 3()係可卸式 附接至該支撐管28’使得例如當該靶材管3〇用過或不再提 供足夠的沉積品質時,該靶材管3〇可輕易地自該支撐管Μ 8 201207139 中移除、亥支撐管28的徑向内表面具有—第一半徑&,且 該支樓管28的徑向外表面具有一第二半徑I。該把材管 30的徑向内表面且有_ —出·/- ·〇 。 ^ 第—丰住R2,且該靶材管30的徑201207139 VI. Invention Description: [Reciprocal References for Related Applications] This application is based on US 35 USC 119(e). The US provisional patent application number 61/398,273 is filed on June 23, 2010. The priority advantage of the number. TECHNICAL FIELD OF THE INVENTION The present invention relates generally to sputter targets, and more particularly to bimetallic rotating targets used in sputter deposition processes. [Prior Art] It is a well-known technique to deposit a coating layer such as a metal coating layer or a ceramic coating layer on a large-area substrate such as a glass or a long elastic substrate using a splatter light material. This is called a discharge process 'which is implemented in a vacuum chamber where the gas is present. Typically, the plating apparatus includes a vacuum chamber, a power source, an anode, and one or more cathode targets including materials used to deposit a metal layer on a substrate. When a potential is applied to the cathode dry material, the gas adjacent to the surface of the dry material forms a population, which bombards the target to cause the material particles of the target to be displaced or emitted from the target. Splashed out. The material splashed from the target typically contacts a substrate and thus accumulates on the substrate. A target record that is constantly in contact with and deposited on the substrate establishes a coating or coating on the substrate. When the money process is carried out in the presence of a gas that interacts with the target, the target and the byproduct of the active gas 4 201207139 are formed on the substrate to form a coating different from the original target. Different types of splash target can be used in the coating process (eg, planar targets, rotary cylindrical targets, etc.). Magnetron sputtering is one of the examples of such sputtering commonly used in conventional techniques. The cylindrical magnetron sputtering method is particularly suitable for coating three-dimensional composite articles, such as those used in cutting tools, biomedical deicing devices, optical fibers, and the like, wherein the substrate is in the $-cylindrical target. Cylindrical magnetron sputters are well known to those skilled in the art. Figure 1 illustrates an embodiment of a conventional cylindrical magnetron tube sputtering apparatus. The apparatus includes a metal niche of a vacuum chamber 2 that performs a sputtering process. A cylindrical rotating dry material 3 is supported by a bracket 5 located at each end of the rotating material 3 so that the dry material can be rotated close to the shaft 7. Gas is supplied to the cab through the 1-body supply 8 and is transmitted through at least the pressure in the chamber to - less than atmospheric pressure. When the spin dry #3 is rotated, for example, the substrate 9 of the glass substrate is moved to the lower side of the (four) 3 through the drum or the same person (not shown). The electric shock is applied to the splash by the power supply 12 The dry material 3 is generated in the vacuum to be reworked to 2, and the sputtering target 3 has a negative charge with respect to the groundable wall 1 or ^^J. The unit is clamped adjacent to the (10) zone of the wire. The (four) clock zone on the material material can be controlled by at least one magnet 4 located in the rotary bowl 3 or at any other suitable location. From the material from the spin _3, the split granules contact the upper surface of the substrate 9 to be produced on the surface of the substrate 9, continuously operating the native coating, coating or material. When the sputtering apparatus shown in Figure 1 produces a layer of uniform deposition material, 5 201207139 there is a need for a rotating target that can produce a bimetallic or polymetallic layer on a substrate. SUMMARY OF THE INVENTION In one aspect of the invention, a bimetallic rotating target is provided. The bimetallic rotating target comprises a cylindrical target tube composed of a first metal. The dry tube has a -__ end, an opposite end, an outer surface extending between the first and first ends, and a central axis extending orthogonal to the first and second ends. The bimetallic rotating target also includes a plurality of pores formed through the outer surface of the target tube. The bimetallic rotating target further includes a plurality of inserts composed of a second metal different from the first metal. One of the plurality of inserts is placed within the parent of the plurality of apertures, wherein each of the inserts comprises a locking mechanism projected therefrom. The locking mechanism contacts the aperture to secure the insert therein. In another aspect of the invention, a method of making a bimetallic rotating target is provided. The method includes providing a cylindrical target tube comprised of a first metal. The target tube has a first end, a second opposite end, an outer surface extending between the first and first ends, and a central axis extending orthogonal to the first and first ends. The method further includes forming a plurality of pores through the outer surface of the lightweight material f. The method also includes placing an insert into each of the plurality of pores. The inserts are composed of a second metal different from the first metal. Each of the inserts includes a locking mechanism projected therefrom. The method also includes integrally attaching the 201207139 inserts to the dry material tube. The advantages of the invention will be changed by those skilled in the art from the following description of the embodiments of the invention which are not shown and described. It’s obvious. The invention may be embodied in other and different embodiments, and its details may be modified in various aspects. [Embodiment] An exemplary embodiment of a bimetallic rotating dry material 20 is shown with reference to 苐2-4. The rotating target 20 is a substantially cylindrical elongated member having a substantially circular cross section. The rotating target 20 includes a first end 22 and a second opposite end 24. In one embodiment, the first and second ends 22, 24 are substantially planar. In another embodiment, the first and second ends 22, 24 have a step-like architecture that is supported by the end bracket 5 (Fig. 1). It will be appreciated by those skilled in the art that the first and second ends 22, 24 can be configured to rotate adjacent to the central axis 26 in any manner sufficient for the end bracket 5 to be received. In the actual example, the material 20 is formed into a cylindrical tube having a concentric layer. In the embodiment illustrated in Figures 3-4, the rotating target 2A includes a support tube 28, a target tube 30, and at least one insert 32 operatively coupled to the target tube 3''. The support tube 28 can be constructed of any material sufficient to provide support for the target tube 3 and which is substantially inactive or inert during the sputtering process. In another embodiment, as shown in Fig. 2, the formed rotating target 20 does not have a support tube 28. The target tube 30 is composed of a -metal, and the at least one insert 32 is composed of a second metal different from the first metal of the target tube 3〇201207139. Any number of inserts can be used to form the second metal pattern adjacent the central axis 26. For example, Figures 2 and 4 illustrate a continuous spiral pattern adjacent the central axis, and those skilled in the art will appreciate that any number of inserts 32 can be used to form the spiral pattern. As shown in Fig. 3, the insert 3 2 of the spiral pattern forms an angle β with respect to the central axis 26. In the illustrated embodiment, the angle 0 is about 45 degrees, but one skilled in the art will appreciate that the alignment angle Θ of the inserts 32 can be greater than the twist and less than 18 inches relative to the central axis 26. degree. In one embodiment, a single insert 32 is operatively attached to the target tube go to form the spiral pattern. In another embodiment, a plurality of inserts 32 are positioned adjacent to each other to form the spiral pattern on the target tube 30. Other patterned inserts 32 can be created and operatively attached to the target tube 30 as described below. In one embodiment, the widths w of the inserts 32 are substantially the same. In another embodiment, the width w of the inserts 32 varies depending on the desired metal ratio in the rotating target 20. The distance between the phase loops of the insert 32 is substantially the same along the entire longitudinal length of the rotating target 20. By maintaining a uniform spacing of the second metal, the resulting deposited layer should be qualitatively uniform in both thickness and composition. As shown in Fig. 3, the support tube 28 and the target tube 3 are concentrically aligned. In one embodiment, the support tube 28 and the target tube 3 are mutually connected to each other. In another implementation, the (4)f 3() is detachably attached to the support tube 28' such that the target tube 3〇, for example, when the target tube 3 is used or no longer provides sufficient deposition quality. It can be easily removed from the support tube 8 201207139, the radially inner surface of the support tube 28 has a first radius & and the radially outer surface of the branch tube 28 has a second radius I. The radial inner surface of the material tube 30 has _-out·/-·〇. ^第丰丰R2, and the diameter of the target tube 30

向外表面38(第14圖)具有一篦一主僻R 虿第一丰仫R3。一熟知此項技術 之人士應了解到該些半徑Ri、R2、R3及該旋轉靶材2〇的長 度L係為足以將該旋轉靶材2〇使用於任何傳統濺鍍系統中 的任何尺寸。 該乾材管30係由_同質金屬或—金屬合金所構成。該 乾材管30係由沉積於—基板上的主㈣材所構成,而該些 插入物32係由次要靶材或隨該主要靶材進行沉積的摻雜靶 材所構成。例如,若該乾材管3〇及插入物32係由不同材 料所構成以形成一雙金屬旋轉靶材2〇,則該靶材管3〇及插 入物32可由鎢(W)、鈦(Ta)、碲(Te)、銅(Cu)、銦(m〇)、銦 (In)、鎵(Ga)、鋁(Ai)、釩(v)、鈮(Nb)、鉻(Cr)或任何其它 金屬或使用於濺鍍沉積中的任何金屬結合的合金所構成。 在一紅轉乾材20的另一示範性實施例中,如第5_6圖 所示,該些插入物32係以類螺旋定位方式附接至該靶材管 3〇,其中,該螺旋不是連續的。該不連續螺旋圖案係藉由 整合地附接複數個插入物32至該靶材管3〇而形成,其中, 每一個插入物係以縱向及徑向兩方式互相隔開。 在一旋轉靶材20的又一示範性實施例中,如第7_8圖 所示,該些插入物32係位於形成靠近該中心軸26的螺旋 狀圖案的複數個對準孔隙36(第14圖)内。該些插入物32 中的每一個係形成一插塞,其可插入該些孔隙26且實質上 9 201207139 被整合附接至練材管3G。在—實施射,該些插入物η 具有-實質上圓剖面外形。纟另一實施例中,該些插入物 32具有一正方、長方或三角剖面外形,但是若該些插入物 3 2中的每個具有相同外形,則該些插入物η可具有任何 剖面外形。該些插入物32中每一個的尺寸可以相同或在插 入物32之間有所不同。該些插入物32彼此間係在徑向及 縱向兩者上互相隔開,藉此形成靠近該中心軸26的螺旋圖 案或其它預定圖案。 在一旋轉靶材20的進—步示範性實施例中,如第⑺ 圖所示,該些插人物32係位於形成靠近該中心軸%的複 數環的複數個對準孔隙内。該些插入物32中的每一個被形 成且外形類似上述第7-8圖所示實施例的插入物32。 如上所述,所形成的旋轉靶材2〇具有或不具有一支撐 管28。該㈣管30可為任何傳統方式所形成的熟知賤錄技 術所用的任何圓柱靶材。關於第2_6圖所示實_,複數個 溝渠34可被割入該靶材管3〇的外表面中,且如第η η 圖所示’該些插人物32係承接於每—個溝渠34内。該些 溝渠34係於切線上形成至該靶材管3〇,且該溝渠w护向 向内延伸的深度自該溝渠34 一末端至該相對末端有 同。該些溝1 34 &amp;整個外形係為一截短圓的形式。該些插 入物32的大小及外形對應至相對應溝渠34的大 形。該些插入物32的寬度實質上係相同於該相對應溝 的寬度。該些溝渠34可以垂直於該中心軸26方向或士 所述地與該中心軸26形成—炎角的方式來切割。該心 10 201207139 34係以對準方式依序割人該粗材管3〇中,使得―實質上螺 旋狀圖案係沿著靠近該中心軸26的㈣管3〇的長度L來 形成:在另-實施例中,在第5_6圖所示實施例中^於該 @材e 0十的/冓渠34 /^如第i i圖所示地為—不連續溝渠 34 „亥些溝渠34可藉由鋸子、雷射或將一溝渠割入一旋轉 靶材2〇中的任何其它傳統機構來割入該靶材管34中。 關於第7-10圖所示實削列,孔隙:%係形成至該靶材管 3〇的外表面38。在一實施例中,該些孔隙刊係以鑽孔技 術來形成之。在另—實施例中,該些孔隙36係使用一電腦 八機來形成之。在又一實施例中,該些孔隙3 6係使 用雷射切割技術來形成之。一熟知此項技術之人士應了解 1亥些孔隙36可以任何傳統方式來形成之。第Μ圖所示 :施例中所示的孔隙36係圓柱形,具有-實質上圓剖面外 ^ ,但—熟知此項技術之人士應了解到該些孔隙36的外形 ^形=為任何外形。如第14圖所示,—孔隙%係透過該 材s 30的外表面38而形成於該靶材管3〇中。該孔隙 s 度Sl及一深度S2。在一示範性實施例中,該寬度 米$為5.08毫米且該深度自該外表面38延伸約為7毫 咏。—熟知此項技術之人士應了解到該些孔隙%的寬度 相尺可視該旋轉靶材20的整個尺寸而變,且該些孔隙36 =對於該靶材管3 〇可為任何尺寸以產生一要求的濺鍍沉積 合成物^ 的第15-17圖說明可承接形成於該靶材管30中的孔隙36 入物32的示範性實施例。該插入物32的所示實施例 11 201207139 中的每-個包含在該孔隙36承接該插人物32時可操作地 附接該插人物32至—相對應孔隙36的較機制4〇。在第 15圖所示實施例中,該插入物32包含實質上垂直的第一表 面42及相對於该第一表面42延伸並以一角度形成的第二 表面44,藉此形成該鎖定機制4〇。在所示實施例中,該第 二表面44相對於該第一表面42係以約45度的角度定位。 在其匕貫施例中,该第二表面44相對於該第一表面U可 、&quot;於大約1度至大約8 9度之間的角度形成。在一實施例 中,該鎖定機制40自該插入物32的上表面48向下延伸約 0.50耄米。一熟知此項技術之人士應了解到該第二表面 相對於該第-表面42定位的角度及該第二表面44自該第 一表面42以一角度延伸的距離可為在實質上填充該孔隙36 的二間時仍足以讓該些插入物3 2配接於該輕材管3 0中相 對應孔隙3 6内的任何角度或距離。 在第16圖所示實施例中,該插入物32包含實質上垂 直的第一表面42及自該第一表面42延伸的第二表面44, 藉此形成該鎖定機制40。該第二表面44係形成自該垂直定 位的第一表面42側向延伸的凸塊或突出物的圓形突出物。 s亥第二表面44所形成的突出物係與該插入物32的上表面 46隔開。 在第17圖所示實施例中,該插入物32包含實質上垂 直的第一表面42及自該第一表面42延伸的第二表面44, 藉此形成該鎖定機制40。該第二表面44係形成自該垂直定 仅的第一表面42側向延伸的凸塊或突出物的圓形突出物。 12 201207139 該第二表面44所形成的突出物係緊鄰該上表面柹。 在一實施例中,在該些相對第一表面42間的插入物32 的寬度係稍小於承接該插入物32的孔隙%的寬度 該鎖定機制40的寬度L2係量身定做,使得它與承接該插入 物32的孔隙36的寬度Sl實質上係相同大小。延伸自該上 表面48的插入物32的高纟l3係實質上相同於該孔隙36 的深度S2。該鎖定機制4〇被架構以在藉由摩擦配接法或按 壓配接法來放置該插入物32於該孔隙36内時,栓緊該孔 隙36内的插入物32。然而,一熟知此項技術之人士應了解 到該插入物32及該鎖錢制4Q的尺寸可務大於或猶小於 放置它的孔隙36。在與形成可插入孔隙刊的插塞的插入物 32有關的鎖定機制4〇被描述於上時,相同的鎖定機制扣 設計也可被利用於可定位於溝渠34内的插人物32中。 該旋轉靶材20的組合涉及將該些溝渠34或孔隙%形 成至絲材管3G中。該些插人物32接著敎位於該乾材 管3〇中相對應的溝渠34或孔隙心。該些插入物以 藉由在該鎖定機制40及定義相對應溝渠34或孔隙36的表 面間的接觸於該溝渠34或孔隙36内形成一適貼或摩擦配 件。在-實施例中,妹材管3G及插人物W接著接受孰 ㈣法(HlPing)、冷均㈣(⑽㈣)、電子束焊接法、超音 波焊接法、摩擦配接法、燒結法或將該些插人物W整 附接至該乾材營1Λ μ ° 任何其它製造法。所產线旋轉Μ 機讀製以完成其外表面。 13 201207139 範例1 一欽(TI)fe材管3〇,具有一長度為55〇毫米,一外部直 徑D3為154毫米,且寬度W為1·5毫米且最大深度為7毫 米的複數個溝渠34形成於該靶材管中。該些溝渠34係相 對於該中心軸26以45度對其定位。具有一鎖定機制40的 複數個插入物32被架構以配接於該些溝渠34中的每一個 内。 範例2 如第9_ 1 0圖所示,具有内含一外部直徑D3為1 54毫米 的550毫米長度的鎢(w)靶材管3〇包含在靠近該中心軸% 處以一螺旋圖案形成於其中的複數個孔隙36。該螺旋圖案 的孔隙36係相對於該中心軸26以對其約45度的角度定 位。複數個圓柱插入物32係由具有稍小於該孔隙寬度1 的寬度Ll的鋁(A1)所構成,而該鎖定機制40具有一寬度l2 為5.08毫米,與該孔隙36的寬度、相同寬度。該插入物 32具有長度L3為7毫米。該些插入物32被按壓配接至 該些孔隙36内。該結合的起材管3G及插人物32接著以熱 均壓程序進行處理以將該些插人物32整合地附接至該乾材 管3〇。接著’該旋轉㈣2G係以機器裁製以移除任何閃燦 或額外材料。 儘管本發明較佳實施例已被描述,然應了解到本發明 並不受此限制,修改例可被進行而不偏離本發明。本發明 範圍係由所附巾請專利範圍所定義,I落人中請專利範圍 14 201207139 思義内的所有裝置 皆是要被包括在内 製程及方法不管是字面上或是等效性 【圖式簡單說明】 A &amp;二及纟它特徵:及它們的優勢係藉由範例並參 附圖來特示於現在將描述的本發明實施例中,其中: 第1圖係習知枯 技術所共知的濺鍍設備的示意圖。 第2圖係-旋轉_施例的透視圖。 圖係旋轉無材的另—實施例的尾視圖。 第圖係第2圖所不的旋轉乾材的展開圖。 第圖係方疋轉乾材的另—實施例的透視圖。 第圖係第5圖所示的旋轉&amp;材的展開圖。 第圖係方疋轉勒材的又一實施例的透視圖。 第8圖係第7圖所示的旋轉靶材的展開圖。 第9圖係-旋轉靶材的進一步實施例的透視圖。 第1〇圖係第9圖所示的旋轉靶材的展開圖。 第11圖係一靶材管實施例的展開圖。 第圖係第11圖所示的靶材管的溝渠切面圖案的 包例。 ’、、J貰 第13圖係—插入物實施例的側視圖。 第14圖係具有於其中形成一孔隙的部分靶材管的剖 圏。 面 第15圖係—圓柱插入物實施例的側視圖。 第16圖係—圓柱插入物的另一實施例的側視圖。 15 201207139 第1 7圖係一圓柱插入物的又一實施例的側視圖。 應注意,所有圖式係示意並未按比例繪示。基於圖式 的簡潔及便利目的,這些圖形中部分的相對尺寸及比例的 大小已被放大或減少。㈣參考號大體上被使用以參考不 同實施例中的對應或類似特傲。诚 一 只1 乂符倣。據此,圖式及說明本質上 係視為圖示而非限制。 【主要元件符號說明】 1 金屬壁 2 真空室 3 圓柱旋轉乾材 4 磁鐵 5 托架 7 軸 8 氣體供應器 9 基板 10 真空泵 12 電源供應器 20 雙金屬旋轉乾材 22 第一末端 24 第二末端 26 中心軸 28 支撐管 30 靶材管 16 201207139 32 插入物 34 溝渠 36 孔隙 38 外表面 40 鎖定機制 42 第一表面 44 第二表面 46 上表面 48 上表面 L 長度 W 寬度 D3 外部直徑 l3 高度 Ri ' R〗、R3 半徑 Si ' 、l2 寬度 s2 深度 17The outer surface 38 (Fig. 14) has a first and a remote R 虿 first Feng R3. Those skilled in the art will appreciate that the radii Ri, R2, R3 and the length L of the rotating target 2 are any size sufficient to use the rotating target 2 in any conventional sputtering system. The dry material pipe 30 is composed of a homogenous metal or a metal alloy. The dry material tube 30 is composed of a primary (four) material deposited on a substrate, and the inserts 32 are composed of a secondary target or a doped target deposited with the primary target. For example, if the dry material tube 3 and the insert 32 are made of different materials to form a bimetallic rotating target 2, the target tube 3 and the insert 32 may be made of tungsten (W) or titanium (Ta). ), tellurium (Te), copper (Cu), indium (m〇), indium (In), gallium (Ga), aluminum (Ai), vanadium (v), niobium (Nb), chromium (Cr) or any other Metal or any metal bonded alloy used in sputter deposition. In another exemplary embodiment of a red-to-coil material 20, as shown in FIG. 5-6, the inserts 32 are attached to the target tube 3〇 in a screw-like manner, wherein the spiral is not continuous of. The discontinuous spiral pattern is formed by integrally attaching a plurality of inserts 32 to the target tube 3, wherein each insert is spaced apart from each other in both longitudinal and radial directions. In still another exemplary embodiment of a rotating target 20, as shown in FIG. 7-8, the inserts 32 are located in a plurality of aligned apertures 36 forming a helical pattern adjacent the central axis 26 (Fig. 14 )Inside. Each of the inserts 32 forms a plug that can be inserted into the apertures 26 and substantially 9 201207139 is integrally attached to the dressing tube 3G. In the implementation of the shots, the inserts η have a substantially circular cross-sectional profile. In another embodiment, the inserts 32 have a square, rectangular or triangular cross-sectional shape, but if each of the inserts 32 has the same shape, the inserts η can have any cross-sectional shape. . Each of the inserts 32 may be the same size or different between the inserts 32. The inserts 32 are spaced apart from one another in both radial and longitudinal directions, thereby forming a spiral pattern or other predetermined pattern adjacent the central axis 26. In a further exemplary embodiment of a rotating target 20, as shown in Figure (7), the inserted characters 32 are located within a plurality of aligned apertures forming a plurality of rings adjacent the central axis. Each of the inserts 32 is formed and shaped similarly to the insert 32 of the embodiment illustrated in Figures 7-8 above. As described above, the formed rotating target 2 has or does not have a support tube 28. The (four) tube 30 can be any cylindrical target used in any conventional manner for the well-known recording technique. Regarding the actual _ shown in FIG. 2_6, a plurality of trenches 34 can be cut into the outer surface of the target tube 3〇, and as shown in the figure ηη, the plugged persons 32 are attached to each of the trenches 34. Inside. The trenches 34 are formed on the target line to the target tube 3〇, and the depth of the trench w inwardly extends from one end of the trench 34 to the opposite end. The grooves 1 34 &amp; the entire shape is in the form of a truncated circle. The inserts 32 have a size and shape corresponding to the shape of the corresponding ditch 34. The width of the inserts 32 is substantially the same as the width of the corresponding groove. The ditches 34 may be cut perpendicular to the central axis 26 or in a manner that forms an inflammatory angle with the central axis 26. The core 10 201207139 34 sequentially cuts the thick metal tube 3 in an aligned manner such that the "substantially spiral pattern is formed along the length L of the (four) tube 3 靠近 near the central axis 26: in another In the embodiment, in the embodiment shown in FIG. 5_6, the @材e010/冓渠34/^ is as shown in Figure ii - the discontinuous ditch 34 A saw, a laser, or any other conventional mechanism that cuts a trench into a rotating target 2〇 into the target tube 34. Regarding the actual shaving shown in Figures 7-10, the pores: % are formed to The outer surface 38 of the target tube 3. In one embodiment, the apertures are formed by drilling techniques. In other embodiments, the apertures 36 are formed using a computer and eight machines. In yet another embodiment, the apertures are formed using laser cutting techniques. Those skilled in the art will appreciate that the apertures 36 can be formed in any conventional manner. The apertures 36 shown in the example are cylindrical in shape and have a substantially circular cross-section, but those skilled in the art should be aware of these The shape of the gap 36 is any shape. As shown in Fig. 14, the void % is formed in the target tube 3 through the outer surface 38 of the material s 30. The pore s degree S1 and a depth S2. In an exemplary embodiment, the width meter is 5.08 mm and the depth extends from the outer surface 38 by about 7 milliTorr. - Those skilled in the art should be aware of the width of the apertures. Depending on the overall size of the rotating target 20, the apertures 36 = can be of any size for the target tube 3 to produce a desired sputter deposition composition. An exemplary embodiment of the aperture 36 in the target tube 30. Each of the illustrated embodiment 11 201207139 of the insert 32 is operatively attached when the aperture 36 receives the insertion person 32 The insert 32 is connected to a corresponding mechanism 4 of the corresponding aperture 36. In the embodiment illustrated in Figure 15, the insert 32 includes a substantially vertical first surface 42 and extends relative to the first surface 42 and The second surface 44 is formed at an angle whereby the locking mechanism 4 is formed. In the illustrated embodiment The second surface 44 is positioned at an angle of about 45 degrees relative to the first surface 42. In its alternative embodiment, the second surface 44 is &lt; about 1 degree to &quot; to the first surface U An angle between about 89 degrees is formed. In one embodiment, the locking mechanism 40 extends downwardly from the upper surface 48 of the insert 32 by about 0.50. A person familiar with the art should be aware of the second. The angle at which the surface is positioned relative to the first surface 42 and the distance at which the second surface 44 extends at an angle from the first surface 42 may be sufficient to allow the inserts 3 to substantially fill the two spaces of the apertures 36. 2 is mated to any angle or distance in the corresponding light pipe 3 in the light pipe 30. In the embodiment illustrated in Figure 16, the insert 32 includes a substantially vertical first surface 42 and a second surface 44 extending from the first surface 42 whereby the locking mechanism 40 is formed. The second surface 44 is a circular protrusion that forms a lug or protrusion that extends laterally from the vertically oriented first surface 42. The protrusion formed by the second surface 44 is separated from the upper surface 46 of the insert 32. In the embodiment illustrated in Figure 17, the insert 32 includes a substantially vertical first surface 42 and a second surface 44 extending from the first surface 42 whereby the locking mechanism 40 is formed. The second surface 44 is a circular protrusion that forms a projection or protrusion that extends laterally from the vertically-defined first surface 42. 12 201207139 The protrusion formed by the second surface 44 is adjacent to the upper surface 柹. In one embodiment, the width of the insert 32 between the opposing first surfaces 42 is slightly less than the width of the aperture % of the insert 32. The width L2 of the locking mechanism 40 is tailored such that it is engaged The width S1 of the apertures 36 of the insert 32 are substantially the same size. The high enthalpy l3 of the insert 32 extending from the upper surface 48 is substantially the same as the depth S2 of the aperture 36. The locking mechanism 4 is configured to bolt the insert 32 within the aperture 36 when the insert 32 is placed within the aperture 36 by a frictional or press fit method. However, a person skilled in the art will appreciate that the insert 32 and the lock 4Q may be larger or smaller than the aperture 36 in which it is placed. The same locking mechanism buckle design can also be utilized in the insert 32 that can be positioned within the ditch 34 when the locking mechanism 4 associated with the insert 32 forming the plug of the insertable aperture is described. The combination of the rotating target 20 involves forming the trenches 34 or % of voids into the wire tube 3G. The inserts 32 are then located in the corresponding ditch 34 or pore center in the dry tube 3〇. The inserts form a conformable or frictional fit within the ditch 34 or aperture 36 by contact between the locking mechanism 40 and the surface defining the corresponding ditch 34 or aperture 36. In the embodiment, the sister tube 3G and the inserted person W are then subjected to the H (I) method (HlPing), the cold (4) ((10) (4)), the electron beam welding method, the ultrasonic welding method, the friction matching method, the sintering method, or the like. Some inserts are attached to the dry material camp 1 μ μ ° any other manufacturing method. The line is rotated and machine-readable to complete its outer surface. 13 201207139 Example 1 A TI tube has a length of 55 mm, an outer diameter D3 of 154 mm, and a width W of 1.5 mm and a maximum depth of 7 mm. Formed in the target tube. The trenches 34 are positioned at 45 degrees relative to the central axis 26. A plurality of inserts 32 having a locking mechanism 40 are configured to mate within each of the trenches 34. Example 2 As shown in Fig. 9-10, a 550 mm long tungsten (w) target tube 3 having an outer diameter D3 of 154 mm is included in a spiral pattern formed near the central axis %. A plurality of apertures 36. The aperture 36 of the spiral pattern is positioned at an angle of about 45 degrees relative to the central axis 26. The plurality of cylindrical inserts 32 are composed of aluminum (A1) having a width L1 slightly smaller than the width 1 of the pores, and the locking mechanism 40 has a width l2 of 5.08 mm, which is the same width as the width of the pores 36. The insert 32 has a length L3 of 7 mm. The inserts 32 are press fit into the apertures 36. The combined draw-up tube 3G and insert 32 are then treated in a thermal equalization procedure to integrally attach the inserts 32 to the dry tube 3〇. Then the rotating (four) 2G system is machine cut to remove any flash or extra material. Although the preferred embodiment of the invention has been described, it should be understood that the invention is not limited thereto, and modifications may be made without departing from the invention. The scope of the present invention is defined by the scope of the patent application attached to the patent, and the patent scope of the patent is 14 201207139. All devices in the thinking are included in the process and method, whether literal or equivalent. BRIEF DESCRIPTION OF THE DRAWINGS A &amp; 2 and its features: and their advantages are illustrated by way of example and with reference to the embodiments of the present invention which will now be described, wherein: Figure 1 is a conventional technique A schematic diagram of a well-known sputtering device. Figure 2 is a perspective view of a rotation-example. The figure is a rear view of another embodiment of the rotating material. The figure is a development view of the rotating dry material which is not shown in Fig. 2. The figure is a perspective view of another embodiment of the dry material. The figure is an expanded view of the rotating &amp; The figure is a perspective view of yet another embodiment of a rotating material. Fig. 8 is a developed view of the rotating target shown in Fig. 7. Figure 9 is a perspective view of a further embodiment of a rotating target. The first drawing is a developed view of the rotating target shown in Fig. 9. Figure 11 is an expanded view of an embodiment of a target tube. The figure is a package example of the trench cut surface pattern of the target tube shown in Fig. 11. </ RTI> Fig. 13 is a side view of an embodiment of the insert. Figure 14 is a cross-section of a portion of a target tube having a void formed therein. Figure 15 is a side view of an embodiment of a cylindrical insert. Figure 16 is a side elevational view of another embodiment of a cylindrical insert. 15 201207139 Figure 17 is a side view of yet another embodiment of a cylindrical insert. It should be noted that all the figures are not shown to scale. The relative size and proportion of the parts of these figures have been enlarged or reduced based on the simplicity and convenience of the drawings. (d) Reference numbers are generally used to refer to corresponding or similar singularities in different embodiments. Sincerely, only one 乂 is imitation. Accordingly, the drawings and description are to be regarded as illustrative rather than limiting. [Description of main components] 1 Metal wall 2 Vacuum chamber 3 Cylindrical rotating dry material 4 Magnet 5 Bracket 7 Shaft 8 Gas supply 9 Substrate 10 Vacuum pump 12 Power supply 20 Bimetal rotary dry material 22 First end 24 Second end 26 Center shaft 28 Support tube 30 Target tube 16 201207139 32 Insert 34 Ditch 36 Hole 38 Outer surface 40 Locking mechanism 42 First surface 44 Second surface 46 Upper surface 48 Upper surface L Length W Width D3 External diameter l3 Height Ri ' R〗, R3 Radius Si ', l2 Width s2 Depth 17

Claims (1)

201207139 七、申請專利範圍: 1.一種雙金屬旋轉靶材,包括·· 由一第一金屬所構成的一圓柱靶材管,該靶材管具有 一第一末鈿、一相對第二末端、延伸於該第一及第二末端 之間的一外表面以及正交於該第一及第二末端進行延伸的 一中心軸; 透過該乾材管的外表面所形成的複數個孔隙;及 由不同於該第一金屬的第二金屬所構成的複數個插入 物。亥複數個插入物之一係置於該複數個&amp;隙中的每一個 ,其中亥些插入物中的每一個包含一自其中投射出 的鎖疋機制,5亥鎖定機制接觸該孔隙以栓緊其内的插入物。 2.如申清專利範圍第1項之雙金屬旋轉靶材,其中,該 第一金屬及該第二金屬係由鎢(w)、鈦(Ta)、碲(Te)'銅 (Cu)翻(Mo)、銦(In)、鎵(Ga) ' 鋁、釩(v)、鈮(Nb)、 鉻(Cr)或金屬合金所構成。 3·如申6青專利範圍第2項之雙金屬旋轉靶材,其中’該 第一金屬係鎢(W),且該第二金屬係鋁(A1)。 4·如申請專利範圍第i項之雙金屬旋轉靶材,其中,該 些孔隙係形成一靠近該中心軸的螺旋圖案。 5.如申請專利範圍第丨項之雙金屬旋轉靶材,其中,該 鎖定機制包含正交於一第一表面進行延伸的上表面,一第 二表面自該第一表面延伸以形成該鎖定機制。 6·如申請專利範圍帛5項之雙金屬旋轉乾材,其中,該 第二表面自該[表面以-角度進行延伸,該第二表面延 18 201207139 伸於該第一表面及該上表面之間。 7·如申請專利範圍第5項之雙金屬旋轉靶材,其中,該 第二表面自該第一表面進行延伸以形成一圓形突出物。 8·如申請專利範圍第7項之雙金屬旋轉靶材,其中,該 圓幵&gt; 突出物係與該插入物的上表面隔開。 9·如申請專利範圍第7項之雙金屬旋轉靶材,其中,該 圓形突出物係緊鄰該插入物的上表面定位,該第二表面延 _伸於該第一表面及該上表面之間。 10. 種製造雙金屬旋轉乾材的方法,包括: 提供由一第一金屬所構成的圓柱靶材管,該靶材管具 有一第一末端、一相對第二末端、延伸於該第一及第二末 端之間的一外表面以及正交於該第一及第二末端進行延伸 的一中心軸; 透:過該靶材管的外表面形成複數個孔隙; 放置插入物至該複數個孔隙中的每一個,該些插入 物由不同於該第一金屬的第二金屬所構成,其中,該些插 入物中的每一個包含一自其中投射出的鎖定機制;及 整合地附接該些插入物至該靶材管。 11. 如申請專利範圍第10項之方法,其令,整合地附接 包含熱均壓法、冷均壓法、電子束焊接法、超音波焊接法 或燒結法。 /2.如申請專利範圍第1〇項之方法,其_,該第一金屬 及。亥第一金屬係由鶴(w)、欽(Ta)、蹄(Te)、銅(Cu)、麵⑽)、 銦(In)、鎵(Ga)、鋁(A1)、釩(v)、鈮(Nb)、鉻(Cr)或一金屬 19 201207139 合金所構成。 13. 如申請專利範圍第12項之方法,其中,該第一金屬 係鎢(W),且該第二金屬係鋁(A1)。 14. 如申請專利範圍第10項之方法,其中,該些孔隙具 有一實質上圓的剖面外形。 八、圖式: (如次頁) 20201207139 VII. Patent application scope: 1. A bimetallic rotating target, comprising: a cylindrical target tube composed of a first metal, the target tube having a first end and a second end, An outer surface extending between the first and second ends and a central axis extending orthogonal to the first and second ends; a plurality of apertures formed through an outer surface of the dry tube; A plurality of inserts different from the second metal of the first metal. One of the plurality of inserts is placed in each of the plurality of &amp; gaps, wherein each of the inserts includes a locking mechanism projected therefrom, and the 5H locking mechanism contacts the aperture to tie The insert inside it. 2. The bimetal rotating target according to claim 1, wherein the first metal and the second metal are turned from tungsten (w), titanium (Ta), and cerium (Te) copper (Cu). (Mo), indium (In), gallium (Ga) 'aluminum, vanadium (v), niobium (Nb), chromium (Cr) or a metal alloy. 3. The bimetallic rotating target of claim 2, wherein the first metal is tungsten (W) and the second metal is aluminum (A1). 4. The bimetallic rotating target of claim i, wherein the pores form a spiral pattern adjacent the central axis. 5. The bimetallic rotating target of claim 3, wherein the locking mechanism comprises an upper surface extending orthogonal to a first surface, a second surface extending from the first surface to form the locking mechanism . 6. The bimetal rotating dry material of claim 5, wherein the second surface extends from the [surface at an angle, the second surface extension 18 201207139 extends over the first surface and the upper surface between. 7. The bimetallic rotating target of claim 5, wherein the second surface extends from the first surface to form a circular protrusion. 8. The bimetallic rotating target of claim 7, wherein the round 幵&gt; protrusion is spaced from the upper surface of the insert. 9. The bimetallic rotating target of claim 7, wherein the circular protrusion is positioned adjacent to an upper surface of the insert, the second surface extending from the first surface and the upper surface between. 10. A method of making a bimetallic rotating dry material, comprising: providing a cylindrical target tube formed of a first metal, the target tube having a first end, a second opposite end, extending to the first and An outer surface between the second ends and a central axis extending orthogonal to the first and second ends; forming: forming a plurality of pores through the outer surface of the target tube; placing the inserts into the plurality of pores Each of the inserts is comprised of a second metal different from the first metal, wherein each of the inserts includes a locking mechanism projected therefrom; and integrally attaching the The insert is to the target tube. 11. The method of claim 10, wherein the integrated attachment comprises a thermal equalization method, a cold equalization method, an electron beam welding method, an ultrasonic welding method, or a sintering method. /2. The method of claim 1, wherein the first metal is. The first metal system of Hei is composed of crane (w), chin (Ta), hoof (Te), copper (Cu), surface (10), indium (In), gallium (Ga), aluminum (A1), vanadium (v), Made of niobium (Nb), chromium (Cr) or a metal 19 201207139 alloy. 13. The method of claim 12, wherein the first metal is tungsten (W) and the second metal is aluminum (A1). 14. The method of claim 10, wherein the pores have a substantially circular cross-sectional shape. Eight, the pattern: (such as the next page) 20
TW100121772A 2010-06-23 2011-06-23 Bimetallic rotary target TW201207139A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110257785A (en) * 2019-07-29 2019-09-20 福建阿石创新材料股份有限公司 A kind of rotating metallic target and preparation method thereof and device
CN115287613A (en) * 2018-04-26 2022-11-04 京浜乐梦金属科技株式会社 Sputtering cathode, sputtering cathode assembly, and sputtering apparatus

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Publication number Priority date Publication date Assignee Title
DE2940369C2 (en) * 1979-10-05 1982-10-21 W.C. Heraeus Gmbh, 6450 Hanau Target
US4443318A (en) * 1983-08-17 1984-04-17 Shatterproof Glass Corporation Cathodic sputtering apparatus
JP2009541594A (en) * 2006-06-26 2009-11-26 ナムローゼ・フェンノートシャップ・ベーカート・ソシエテ・アノニム Method for producing a rotatable sputter target

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115287613A (en) * 2018-04-26 2022-11-04 京浜乐梦金属科技株式会社 Sputtering cathode, sputtering cathode assembly, and sputtering apparatus
CN110257785A (en) * 2019-07-29 2019-09-20 福建阿石创新材料股份有限公司 A kind of rotating metallic target and preparation method thereof and device
CN110257785B (en) * 2019-07-29 2020-07-28 福建阿石创新材料股份有限公司 Rotary metal target material and preparation method and device thereof

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