201205884 六、發明說明： 【發明所屬之技術領域】 [0001]本發明涉及一種二極體，特別是指一種發光二極體。 [先前技術] • [0002]發光二極體憑藉其高光效、低能耗、無污染等優點，已 被應用於越來越多的場合之中，大有取代傳統光源的趨 勢。 [0003]習知的發光二極體一般是單面出光，有業者採用特殊結 〇 構的電減基板植入發光二極體内，使愚達到雙面或多 面出光的效果，《滿足特定場合的需求。妙 “、、、而，該種特 殊結構的電極及基板設计通常較為複雜p < .不利於產業利 用。 【發明内容】 ‘槌體，其結構 [0004] 本發明旨在提供一種可多面發光的發先 簡單。 [0005] 一種發光二極體，其包括一基板、一對安事、 引腳、-電性連接腳的發光二極體 & <基板上的 板上並包封發光二極體晶片的封裝體，武 疋；丞 裝體均採用透明材料製成。 ’、引腳及封 [0006] 一烛體的 封裝體均採用透明材料所製成，發光二極a扳、引腳及 透射基板、引腳及封裝體能從多個方肖冑發出的光可 多面出光的效果。並且，本發明的發光:出’從而達到 簡單’適於在產業上的大規模應用。極體結構較為 099125009 表單編號A0101 第3頁/共13頁 201205884 【實施方式】 [0007]請參閱圖1，示出了本發明第一實施例的發光二極體。該 發光二極體包括一基板10、一對貼設於基板1〇表面的引 腳20、一設於其中一引腳20上的發光二極體晶片3〇及一 連接基板10並包封發光二極體晶片3〇的封裝體4〇。該基 板ίο由透明材質所製成，如玻璃（giass)、矽膠 (silicone)、環氧樹脂（ep〇Xy)、聚破酸醋 (polycarbonate)或者聚甲基丙烯酸甲酯 (polymethylmethacrylate);優選地，為有利於發光 二極體晶片30的散熱，基板10可由具有高散熱性能的玻 璃製成。該二引腳20貼設於基板1〇表面’其中每一引腳 20均從基板1〇的上表面繞過基板1〇的側邊延伸至基板1〇 下表面。二引腳20的末端均彼此隔開，以與電路板（圖未 示）的接點接觸而將電流輸入進發光二極體晶片内。引 腳20由透明的導電材料製成，如氧化銦錫（indium tin oxide)或氧化鋅（ZnO)。發光二極體晶片3〇通過導熱膠 50黏接於一引腳20表面從而固定於基板1〇上。根據所需 的出光顏色’發光二極體晶片30可由不同的半導體材料 製成’如可發出紅光的GaAsP，可發出黃光的inGaAlP， 可發出藍光的GaN，可發出綠光的(jap等等。優選地，為 了使最終的出光呈現白色，本實施例中的發光二極體晶 片30可由發藍光的半導體材料製成。發光二極體晶月3〇 包括一半導體發光結構層32及二電極34。該半導體發光 結構層32位於發光二極體晶片30的中部位置，其可受電 流的激發而向周圍各個方向輻射出光子。於本發明實施 例中，二電極34分別位於發光二極體晶片3〇左右兩側的 099125009 表單編號A0101 第4頁/共13頁 0992043933-0 201205884 頂端且以一定落差錯開，而電極亦可以為其他不同的針 構設置在發光二極體晶片3〇的表面。與引腳2〇的材料相 似，電極34亦是採用如氡化銦錫（indium tin 〇xi~) Ο ' [0008] 或氧化鋅（ZnO)等透明導電材料製成。二金線6〇分別將_ 電極34連接至相應的引腳2〇表面，以將引腳2〇與發光二 極體晶片30電性導通。封裝體4〇與引腳2〇及基板1〇表面 連接且完全包覆發光二極體晶片3〇及金線6〇，以對二者 起到保護作用。封裝體40由透明材料製成，如矽膠 (silicone)、玻璃（glass)、環氧樹脂（ep〇xy)、聚碳 酸醋（po 1 y carbonate)或者聚甲基丙締酸甲酯 (polymethylmethacrylate) ° 由於基板10、引腳20及封裝體4〇均由透明材料製成，由 發光二極體晶片30的半導體發光結構層32向各方向所發 出的光線可直接透射該等元件，從而達到多面發光的效 果。並且，由於結構相對簡單，本發明的發光二極體可 適於產業上的大規模量產》 Q [0009] 請參閱圖2，其為本發明第二實施例的發光二極體。第二 實施例的發光二極體與第一實施例的發光二極體不同之 處在於發光二極體晶片30的設置方式，其餘結構均相同 。該第二實施例的發光二極體晶片30是採用倒裝 (flip-chip)固定於引腳20上，即以二電極34朝下的方 式通過導電膠50a與引腳20連接。本實施例中導電膠50a 亦是採用透明材料製成。特別地，為提升發光二極體晶 片30的出光效率，可以採用異方性導電（anisotropic conductive)材料來製造導電膠50a。 099125009 表單編號A0101 第5頁/共13頁 0992043933-0 201205884 [0010] 相比於第一實施例的發光二極體，第二實施例的發光二 極體所採用的倒裝發光二極體晶片30可省去連接電極34 與引腳20的金線60，從而在一定程度上避免由於金線6〇 的阻擋而導致發光二極體出光效率下降的問題。 [0011] 圖3示出了本發明第三實施例的發光二極體，其是在第一 實施例的發光二極體的基礎上添加了螢光粉7〇，其中一 部分螢光粉70分佈於基板10内部’另一部分螢光粉7〇通 過圍繞發光二極體外表面的透明膠體80分佈於封裝體4〇 整個外表面及二引腳20的外侧面。螢光粉可以採用石榴 石（garnet)結構的化合物、氮化物、硫化物、氮氧化物 或石夕酸鹽（silicate)等適合的材料製成，以將發光二極 體晶片30的藍光轉換為黃光α通過在基板1〇内及封裝體 40表面添加螢光粉70，自發光二極體晶片30發出的藍光 在各個方向上都可被螢光粉70所吸收而轉換成黃光，從 渴•合白光的形式朝向各方向射出。 , .： [〇°123圖4示出了本發明第四實施例的發光二極體，與第三實施 例相似，其是在第二實施例的#类二極體的基礎上添加 了螢光粉70，其中一部分螢光粉70分佈於基板10内部， $ —部分螢光粉7〇通過透明膠體80分佈於封裝體40整個 夕卜表面及二引腳20的外侧面。本實施例的發光二極體同 樣可達到多面發射白光的效果。 [〇〇13] 可以理解地，本發明的各實施例的發光二級管還可搭配 透命•或導光板一起使用，以產生符合特定目標的光型。 特別地’第三及第四實施例中的位於封裝體40外表面的 $走*粉70可轉移至透鏡或導光板表面，同樣能達到多面 099125009 表軍 A0101 第 6 頁/共 13 頁 0992043933-0 201205884 出光的效果。 [00M] 綜上所述’本發明符合發明專利要件，爰依法提出專利 申請。惟’以上所述者僅為本發明之較佳實施例，舉凡 熟悉本案技藝之人士，在爰依本發明精神所作之等六文修 飾或變化，皆應涵蓋於以下之申請專利範圍内。 > 【圖式簡單說明】 [0015] 圖1是本發明第一實施例的發光二極體的剖視圖 [〇〇16] 圖2是本發明第二實施例的發光二極體的剖視圖201205884 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a diode, and more particularly to a light-emitting diode. [Prior Art] • [0002] Light-emitting diodes have been used in more and more occasions due to their high luminous efficiency, low energy consumption, and no pollution. They have a tendency to replace traditional light sources. [0003] The conventional light-emitting diodes generally have a single-sided light output, and a manufacturer uses a special structure to reduce the effect of the double-sided or multi-faceted light-emitting substrate into the light-emitting diode. Demand. The design of the electrode and substrate of this special structure is usually complicated. It is not conducive to industrial utilization. [Description] [槌], its structure [0004] The present invention aims to provide a multi-faceted The light emitting diode is simple. [0005] A light emitting diode comprising a substrate, a pair of amps, pins, and electrical connecting legs of the light emitting diode &< The package of the light-emitting diode chip, the monk; the armor body is made of transparent material. ', the pin and the seal [0006] The body of the candle body is made of transparent material, the light-emitting diode The light emitted from the plurality of squares, the lead and the transmissive substrate, the lead and the package can be multi-faceted. Moreover, the illumination of the present invention is simple and suitable for large-scale applications in the industry. The polar body structure is more than 099125009. Form No. A0101 Page 3 / Total 13 pages 201205884 [Embodiment] [0007] Referring to Figure 1, there is shown a light emitting diode according to a first embodiment of the present invention. The light emitting diode includes a light emitting diode. The substrate 10 and the pair of electrodes are attached to the substrate 1 a pin 20, a light emitting diode chip 3 disposed on one of the pins 20, and a package body 4 connected to the substrate 10 and enclosing the LED chip 3. The substrate is made of a transparent material. Made of, for example, giass, silicone, epoxy (ep〇Xy), polyacetate or polymethylmethacrylate; preferably, to facilitate light-emitting diodes The heat dissipation of the bulk wafer 30 can be made of glass having high heat dissipation performance. The two pins 20 are attached to the surface of the substrate 1 each of which leads from the upper surface of the substrate 1 to the substrate 1 The sides extend to the lower surface of the substrate 1. The ends of the two pins 20 are spaced apart from each other to input current into the LED chip in contact with a contact of a circuit board (not shown). It is made of a transparent conductive material, such as indium tin oxide or zinc oxide (ZnO). The light-emitting diode chip 3 is bonded to the surface of a pin 20 through the thermal conductive adhesive 50 to be fixed on the substrate 1 The LED array 30 can be different depending on the desired light output color The semiconductor material is made of, for example, GaAsP which emits red light, inGaAlP which emits yellow light, GaN which emits blue light, which emits green light (jap, etc. Preferably, in order to make the final light appear white, this embodiment The light emitting diode chip 30 can be made of a blue light emitting semiconductor material. The light emitting diode crystal layer 3 includes a semiconductor light emitting structure layer 32 and two electrodes 34. The semiconductor light emitting structure layer 32 is located on the light emitting diode chip 30. The central position, which can be excited by current to radiate photons in all directions. In the embodiment of the present invention, the two electrodes 34 are respectively located on the left and right sides of the LED array 3, 099125009, Form No. A0101, Page 4/13, 0992043933-0 201205884, and are staggered by a certain drop, and the electrodes may also be Other different stitches are disposed on the surface of the LED substrate 3 . Similar to the material of the lead 2 turns, the electrode 34 is also made of a transparent conductive material such as indium tin ) ~ [ ' [0008] or zinc oxide (ZnO). The two gold wires 6 连接 connect the _ electrode 34 to the corresponding pin 2 〇 surface, respectively, to electrically connect the pin 2 〇 to the illuminating diode chip 30. The package body 4 is connected to the surface of the lead 2A and the substrate 1 and completely covers the LED chip 3 and the gold wire 6〇 to protect the two. The package 40 is made of a transparent material such as silicone, glass, epoxy (ep〇xy), po y carbonate or polymethylmethacrylate. Since the substrate 10, the leads 20, and the package 4 are all made of a transparent material, the light emitted from the semiconductor light-emitting structure layer 32 of the light-emitting diode wafer 30 in various directions can directly transmit the components, thereby achieving multi-faceted The effect of light. Moreover, since the structure is relatively simple, the light-emitting diode of the present invention can be adapted to mass production in the industry. [0009] Please refer to FIG. 2, which is a light-emitting diode according to a second embodiment of the present invention. The light-emitting diode of the second embodiment is different from the light-emitting diode of the first embodiment in the arrangement of the light-emitting diode wafer 30, and the remaining structures are the same. The light-emitting diode wafer 30 of the second embodiment is flip-chip-bonded to the lead 20, that is, connected to the lead 20 via the conductive paste 50a with the two electrodes 34 facing downward. In the embodiment, the conductive paste 50a is also made of a transparent material. In particular, in order to improve the light-emitting efficiency of the light-emitting diode wafer 30, an anisotropic conductive material may be used to manufacture the conductive paste 50a. 099125009 Form No. A0101 Page 5 of 13 0992043933-0 201205884 [0010] Compared to the light emitting diode of the first embodiment, the flip-chip diode chip used in the light emitting diode of the second embodiment 30, the gold wire 60 connecting the electrode 34 and the pin 20 can be omitted, thereby avoiding the problem that the light-emitting diode light-emitting efficiency is lowered due to the blocking of the gold wire 6〇 to some extent. [0011] FIG. 3 shows a light-emitting diode according to a third embodiment of the present invention, which is based on the light-emitting diode of the first embodiment, in which a phosphor powder 7 is added, and a part of the phosphor powder 70 is distributed. Inside the substrate 10, another portion of the phosphor powder 7 is distributed on the entire outer surface of the package 4 and the outer side of the two pins 20 through the transparent colloid 80 surrounding the outer surface of the light emitting diode. The phosphor powder may be made of a suitable material such as a garnet compound, a nitride, a sulfide, an oxynitride or a silicate to convert the blue light of the light-emitting diode wafer 30 into The yellow light α is added to the surface of the substrate 1 and the surface of the package 40 to add the phosphor powder 70, and the blue light emitted from the light-emitting diode wafer 30 can be absorbed by the phosphor powder 70 in all directions to be converted into yellow light. Thirsty • The form of white light is emitted in all directions. FIG. 4 shows a light-emitting diode according to a fourth embodiment of the present invention, similar to the third embodiment, which is based on the #-type diode of the second embodiment. The light powder 70, a part of the phosphor powder 70 is distributed inside the substrate 10, and the part of the phosphor powder 7 is distributed through the transparent colloid 80 on the entire surface of the package 40 and the outer side of the two pins 20. The light-emitting diode of this embodiment can also achieve the effect of emitting white light on multiple sides. [〇〇13] It will be appreciated that the light-emitting diodes of various embodiments of the present invention may also be used in conjunction with a permeable or light guide to produce a light pattern that meets a particular target. In particular, the 'walking powder* 70 located on the outer surface of the package body 40 in the third and fourth embodiments can be transferred to the surface of the lens or the light guide plate, and can also reach the multi-faceted 099125009, the military A0101, page 6 of 13 0992043933- 0 201205884 The effect of light. [00M] In summary, the invention conforms to the patent requirements of the invention, and the patent application is filed according to law. However, the above description is only the preferred embodiment of the present invention, and those who are familiar with the art of the present invention should be included in the following claims within the scope of the following claims. 1 is a cross-sectional view of a light-emitting diode according to a first embodiment of the present invention. [FIG. 2] FIG. 2 is a cross-sectional view of a light-emitting diode according to a second embodiment of the present invention.
[0017] 圖3是本發明第三實寒例的發光二極體的剖視圖 [〇〇18] 圖4是本發明第四實施例的發光二極體的剖視圖 【主要元件符號說明】 [〇〇19]基板：10 引腳：20 發光二極體晶片：30 半導體發光結構層：323 is a cross-sectional view of a light-emitting diode of a third embodiment of the present invention. FIG. 4 is a cross-sectional view of a light-emitting diode according to a fourth embodiment of the present invention. [Description of Main Components] [〇〇] 19] Substrate: 10 pins: 20 LEDs: 30 Semiconductor light-emitting structure: 32
[0020] [0021][0020] [0021]
[0022] [0023] 電極：34 [0024] 封裝體：40 [0025] 導熱膠：50 [0026] 導電膠：50a [0027] 金線：60 [0028] 螢光粉：70 099125009 表單編號A0101 第7頁/共13頁 0992043933- 201205884 [0029] 透明膠體 80 099125009 表單編號A0101 第8頁/共13頁 0992043933-0[0023] Electrode: 34 [0024] Package: 40 [0025] Thermal paste: 50 [0026] Conductive adhesive: 50a [0027] Gold wire: 60 [0028] Fluorescent powder: 70 099125009 Form No. A0101 7 pages/total 13 pages 0992043933- 201205884 [0029] Transparent colloid 80 099125009 Form number A0101 Page 8 of 13 0992043933-0