201145564 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明係《於-種發光m片之製造方法， 尤指-種防止發光二極體晶片之基板㈣及提升製程良 率之發光二極體晶片之製造方法。 • [先前技術] [0002] #光二極體是利用電能轉化為光能的方式發光。發 光二極體晶粒的組成材料是半導體，其中含有帶正電的 〇 電洞比率較高的稱為P型半導體，含有帶負電的電子比 树高的稱為N型半導體土型半導體與N料導體相 接處的接面稱作PN接面。在發光二極體的正負極兩端施 予電壓’當電流通過時，會使得電子與電洞結合，結合 的能量便以光的形式發出，依使用材料的能階高低決定 發光的波長，因此就會發出不同顏色的光。 大多數的發光二極體歸類於三五族半導體，因為它 們的組成兀素屬於周期表中的主族及五族，三族元素如 ◎ 18、嫁、姻等’五族元素如畔、氮、鱗等。磷化鎵與鋁 坤化鎵，因為亮度低，開發時間早，且内含2種或3種元 素’多稱為傳統二元或三元LED。而銘銦鎵鱗因發光亮度 較南，且由4種tl素組成，多稱為四元⑽。氣化嫁材料 則因為可以發出以上材料不能發出的藍光，—般另稱為 氮化物LED。 發光二極體主要由晶粒發光，在此以氮化鎵發光二 極體為例，簡介其中晶粒的製作方法。發光二極體是半 導體材料，需要先進行磊晶成長，也就是在基板上成長p 型及N型半導體。氮化鎵LED使用的基板材料是藍寶石， 099119354 表單編號A0101 第3頁/共11頁 ' 0992034301-0 201145564 因為藍寶石不導電，無法在上面製作電極，必須利用較 複雜的技巧把正負兩電極製作在同一平面上，使得製程 較為繁雜。一般作法是使用乾式蝕刻機把表面的p型半導 體部分區域挖除，露出底下的N型半導體，再在P及N 型半導體上製作電極，使得電流可以導通而發光。 目前在氮化鎵系發光二極體仍以2”的藍寶石基板為 主，但未來發展的趨勢會以4”藍寶石基板為主流，但由 於藍寶石基板與氣化嫁糸轰晶結構間晶格不匹配造成的 藍寶石基板產生翹曲，尤其藍寶石基板之尺寸由2”變成 4”時，藍寶石基板翹曲現象呈現劇烈性的增加。主要的 原因為尺寸變大其剛性相對的降低，且磊晶後的總應力 亦會隨尺寸增加而增加，致使翹曲程度劇增，進而造成製 程良率上的損失。 另外，因為鼠化嫁系蟲晶結構成長在藍寶石基板上 晶格不匹配，所以會有應力產生，這是一種伸張式應力 隨著厚度及藍寶石基板尺寸的增加翹曲度越大，和緩衝 層的厚度成正比，藍寶石基板一但翹曲之後會造成表面 溫度不均勻，其中心點和邊緣温度差異在成長量子井時 ，因為溫差而造成製程良率下降。 雖然2”藍寶石基板的翹曲程度已算溫和，但仍然一 直困擾著大家，更何況未來的發展以4”藍寶石基板為主 軸，一片2”藍寶石基板如果在長多層量子井結構的發光 二極體時翹曲率為20 km_1，那會產生2nm波長的誤差。 但在4”藍寶石基板上則會有8nm波長的誤差，例如，2” 藍寶石基板翹曲10 knf1，會產生3%良率的損失（假設 5nm波長誤差是容許範圍）那麼4”藍寶石基板就會有10% 099119354 表單編號A0101 第4頁/共11頁 0992034301-0 201145564 的良率的損失，所以藍寶石基板之尺寸由2”變成4”時 ，藍寶石基板翹曲現象呈現劇烈性的增加，將會損失良 率。 θ [0003]201145564 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention is a method for manufacturing a light-emitting m-chip, in particular, a substrate for preventing a light-emitting diode chip (four) and a light for improving process yield A method of manufacturing a diode chip. • [Prior Art] [0002] #光二极体 is a way of using electrical energy to convert into light energy. The constituent material of the light-emitting diode crystal is a semiconductor, which contains a positively charged cesium hole ratio, which is called a P-type semiconductor, and a negatively charged electron is called a N-type semiconductor earth type semiconductor and N. The junction where the conductors meet is referred to as the PN junction. Applying a voltage across the positive and negative terminals of the light-emitting diode. When the current passes, the electrons are combined with the hole, and the combined energy is emitted in the form of light. The wavelength of the light is determined according to the energy level of the material used. It will emit light of different colors. Most of the light-emitting diodes are classified into the three-five semiconductors, because their constituent elements belong to the main and five families of the periodic table, and the three elements such as ◎18, marry, marriage, etc. Nitrogen, scales, etc. Gallium phosphide and aluminum gamma gallium, because of low brightness, early development time, and contains two or three elements 'more commonly known as traditional binary or ternary LED. The indium gallium scale is composed of four kinds of tl pigments, which are called quaternary (10). The vaporized marshalling material is also called a nitride LED because it can emit blue light that cannot be emitted by the above materials. The light-emitting diode is mainly made of a crystal grain. Here, a gallium nitride light-emitting diode is taken as an example to describe a method for fabricating the crystal grain. The light-emitting diode is a semiconductor material and needs to be epitaxially grown first, that is, a p-type and an N-type semiconductor are grown on the substrate. The substrate material used for GaN LED is sapphire, 099119354 Form No. A0101 Page 3 of 11 '99292301-0-0, 201145564 Because sapphire is not conductive, it is impossible to make electrodes on it. It is necessary to use more complicated techniques to make the positive and negative electrodes On the same plane, the process is more complicated. It is common practice to use a dry etching machine to remove portions of the p-type semiconductor portion of the surface to expose the underlying N-type semiconductor, and then to form electrodes on the P and N-type semiconductors so that current can be turned on to emit light. At present, the gallium nitride-based light-emitting diode is still dominated by a 2" sapphire substrate, but the future development trend will be dominated by a 4" sapphire substrate, but the lattice between the sapphire substrate and the vaporized martensite crystal structure is not The warpage caused by the matching of the sapphire substrate, especially when the size of the sapphire substrate is changed from 2" to 4", the warpage of the sapphire substrate is severely increased. The main reason is that the size is increased and the rigidity is relatively reduced, and the total stress after epitaxy also increases with the increase of the size, resulting in a sharp increase in the degree of warpage, which in turn causes a loss in process yield. In addition, because the crystal structure of the murine system is not matched on the sapphire substrate, there is stress generation, which is a kind of tensile stress with greater thickness and sapphire substrate size increase, and the buffer layer The thickness of the sapphire substrate is not uniform after warping, and the difference between the center point and the edge temperature is caused by the temperature difference, which causes the process yield to decrease. Although the warpage of the 2" sapphire substrate is mild, it still plagues everyone, not to mention the future development of the 4" sapphire substrate as the main axis, a 2" sapphire substrate if the LED in the long multilayer quantum well structure When the warp curvature is 20 km_1, it will produce an error of 2 nm wavelength. However, there will be an error of 8 nm wavelength on the 4” sapphire substrate. For example, a 2” sapphire substrate warp 10 knf1 will result in a loss of 3% yield ( Assuming that the 5nm wavelength error is within the allowable range, then the 4" sapphire substrate will have 10% 099119354 Form No. A0101 Page 4 / Total 11 Page 0992034301-0 201145564 Yield loss, so the size of the sapphire substrate changes from 2" to 4" At this time, the sapphire substrate warpage phenomenon is dramatically increased, and the yield will be lost. θ [0003]
有鑑於上述問題，本發明提供一種發光二極體之製 造方法，其主要將大尺寸基板劃分成小尺寸的複數磊晶 成長區，於每·—遙晶成長區成長一蠢晶結構*形成複數 發光二極體晶片，有效防止每一發光二極體晶片之藍寶 石基板產生翹曲，即使其中發光二極體晶片之藍寶石基 板產生組曲5亦沿者該些蠢晶成長區周圍之複數分割溝 槽自然分裂，不會損壞其他發光二極體晶片，有效提升 製程之良率。 【發明内容】 本發明之目的，在於提供一種發光二極體晶片之製 造方法，其主要將大尺寸基板劃分成小尺寸的複數磊晶 成長區’於每一遙晶成長區成長一蟲晶結構，形成複數 發光二極體晶片，有效防止發光二極體晶片之基板產生 翹曲，即使發光二極體晶片之基板產生翹曲，亦沿著該 些磊晶成長區周圍之複數分割溝槽自然分裂，不會損壞 其他發光二極體晶片，有效提升製程之良率。 為達到上述之目的，本發明提供一種發光二極體晶 片之製造方法，係包含：取一基板；劃分該基板為複數 磊晶成長區，該基板具有至少一第一分割溝槽及至少一 第二分割溝槽；以及成長複數磊晶結構於該些磊晶成長 區，形成複數發光二極體晶片。 【實施方式】 099119354 表單編號Α0101 第5頁/共11頁 0992034301-0 201145564 [0004] 茲為使貴審查委員對本發明之結構特徵及所達成 之功效有更進一步之瞭解與認識，謹佐以較佳之實施例 及配合詳細之說明，說明如後： 請參閱第一圖，係本發明之一較佳實施例之流程圖 。如圖所示，習知發光二極體晶片之製造方法係先將一 磊晶結構沉積於一基板上形成一發光二極體晶片，其主 要因為磊晶結構成長於基板上晶格不匹配，因此磊晶結 構與基板間將有應力產生，隨著發光二極體晶片尺寸越 大，發光二極體晶片之基板所產生之翹曲度越大，發光 二極體晶片之基板一但發生翹曲之後會造成發光二極體 晶片之表面溫度不均勻，發光二極體晶片之中心點和其 邊緣溫度差異在成長量子井時，可能因為溫差導致製程 良率下降。 所以本實施例提供一種發光二極體晶片之製造方法 ’主要將大尺寸基板劃分成小尺寸的複數蠢晶成長區’ 於每一磊晶成長區成長一磊晶結構，形成複數發光二極 體晶片。就是將發光二極體晶片之尺寸變小，有效防止 發光二極體晶片之基板產生翹曲，即使發光二極體晶片 之基板產生翹曲，亦沿著複數分割溝槽自然分裂，不會 損壞其他發光二極體晶片，有效提升製程之良率。 本實施例之製造方法係先執行步驟S10，取一基板， 其中基板為藍寶石基板。請一併參閱第二圖，係本發明 之一較佳實施例之劃分後之基板示意圖。如圖所示，接 著執行步驟S12，劃分基板10為複數磊晶成長區101，基 板具10有至少一第一分割溝槽103及至少一第二分割溝槽 105，第一分割溝槽103及第二分割溝槽105相互垂直， 099119354 表單編號A0101 第6頁/共11頁 0992034301-0 201145564 利用第一分割溝槽103及第二分割溝槽105隔出該些磊晶 成長區101。其中劃分基板10之方式可利用雷射加工基板 10，並切割出第一分割溝槽103及第二分割溝槽105 ;或 者可利用化學蚀刻基板10，並蝕刻出第一分割溝槽103及 第二分割溝槽105。第一分割溝槽103及第二分割溝槽 105之深度係介於10 μ m與500 //m之間。上述利用第一分 割溝槽103及第二分割溝槽105於基板10上隔出該些磊晶 成長區101，第一分割溝槽103與第二分割溝槽105數量 越多，所隔出之磊晶成長區101之數量越多，然後每一發 光二極體晶片尺寸越小。所以主要依據發光二極體晶片 之大小決定遙晶成長區101之數量進行劃分。 最後執行步驟S14，成長複數磊晶結構於該些磊晶成 長區，每一磊晶結構對應一磊晶成長區，形成複數發光 二極體晶片。上述磊晶結構為氮化鎵系磊晶結構，並至 少包含一N型半導體層、一發光層及一P型半導體層，蟲 晶結構為發光領域皆知之技術，於此不再贅述。 由上述可知，本發明係為提供一種發光二極體晶片 之製造方法，其主要將大尺寸基板劃分成小尺寸的複數 蠢晶成長區，並於母一蠢晶成長區上成長一遙晶結構， 形成複數發光二極體晶片，本發明所提供之製造方法就 是將發光二極體晶片之尺寸變小，有效防止發光二極體 晶片之基板產生翹曲，即使發光二極體晶片之基板產生 翹曲，亦會沿著第一分割溝槽及第二分割溝槽產生分裂 ，如此不會損壞其他發光二極體晶片，又能有效提升製 程之良率。 綜上所述，本發明具有新穎性、進步性及可供產業 099119354 表單編號A0101 第7頁/共11頁 0992034301-0 201145564 利用者，應符合我國專利法所規定之專利申請要件無疑 ，爰依法提出發明專利申請，祈鈞局早日賜准專利， 至感為禱。惟，以上所述者，僅為本發明之一較佳實施 例而已，並非用來限定本發明實施之範圍，舉凡依本發 明申請專利範圍所述之形狀、構造、特徵及精神所為之 均等變化與修飾，均應包括於本發明之申請專利範圍内 〇 【圖式簡單說明】 [0005] 第一圖：本發明之一較佳實施例之流程圖；以及 第二圖：本發明之另一較佳實施例之劃分後之基板示意 圖。 【主要元件符號說明】 [0006] 10 基板 101 蠢晶成長區 103 第一分割溝槽 105 第二分割溝槽 099119354 表單編號A0101 第8頁/共11頁 0992034301-0In view of the above problems, the present invention provides a method for fabricating a light-emitting diode, which mainly divides a large-sized substrate into a plurality of small-sized epitaxial growth regions, and grows a stupid crystal structure in each of the growth regions* to form a complex number. The illuminating diode chip effectively prevents warpage of the sapphire substrate of each of the illuminating diode chips, even if the sapphire substrate of the illuminating diode chip generates the slab 5 along the plurality of dividing trenches around the stray crystal growth regions Naturally split, it will not damage other LED chips, which will effectively improve the yield of the process. SUMMARY OF THE INVENTION An object of the present invention is to provide a method for fabricating a light-emitting diode wafer, which mainly divides a large-sized substrate into a plurality of small-sized epitaxial growth regions, and grows a crystal structure in each of the remote crystal growth regions. Forming a plurality of light-emitting diode chips to effectively prevent warpage of the substrate of the light-emitting diode wafer, even if the substrate of the light-emitting diode wafer is warped, the plurality of dividing trenches around the epitaxial growth regions are naturally Splitting, will not damage other LED chips, effectively improve the yield of the process. In order to achieve the above object, the present invention provides a method for fabricating a light emitting diode chip, comprising: taking a substrate; dividing the substrate into a plurality of epitaxial growth regions, the substrate having at least one first dividing trench and at least one And dividing the plurality of epitaxial structures into the epitaxial growth regions to form a plurality of light emitting diode chips. [Embodiment] 099119354 Form No. 1010101 Page 5 of 11 0992034301-0 201145564 [0004] In order to enable your review committee to have a better understanding and understanding of the structural features and effects achieved by the reviewer, The preferred embodiment and the detailed description are as follows: Please refer to the first figure, which is a flow chart of a preferred embodiment of the present invention. As shown in the figure, a conventional method for fabricating a light-emitting diode wafer is to deposit an epitaxial structure on a substrate to form a light-emitting diode wafer, which is mainly because the epitaxial structure grows on the substrate and the lattice mismatch occurs. Therefore, stress will be generated between the epitaxial structure and the substrate. As the size of the LED is larger, the warpage of the substrate of the LED substrate is larger, and the substrate of the LED substrate is warped. After the koji, the surface temperature of the illuminating diode chip is not uniform, and the difference between the center point of the illuminating diode chip and the edge temperature thereof may increase the process yield due to the temperature difference. Therefore, the present embodiment provides a method for manufacturing a light-emitting diode wafer, which mainly divides a large-sized substrate into a plurality of small-sized amorphous regions, and grows an epitaxial structure in each epitaxial growth region to form a complex LED. Wafer. That is, the size of the light-emitting diode chip is reduced, and the substrate of the light-emitting diode chip is effectively prevented from being warped. Even if the substrate of the light-emitting diode chip is warped, it is naturally split along the plurality of divided grooves and is not damaged. Other LED chips can effectively improve the yield of the process. The manufacturing method of this embodiment first performs step S10 to take a substrate, wherein the substrate is a sapphire substrate. Please refer to the second figure, which is a schematic diagram of a divided substrate according to a preferred embodiment of the present invention. As shown in the figure, the step S12 is performed to divide the substrate 10 into a plurality of epitaxial growth regions 101. The substrate device 10 has at least one first dividing trench 103 and at least one second dividing trench 105, and the first dividing trench 103 and The second divided trenches 105 are perpendicular to each other, 099119354 Form No. A0101, Page 6 / Total 11 pages 0992034301-0 201145564 These epitaxial growth regions 101 are separated by the first divided trenches 103 and the second divided trenches 105. The method of dividing the substrate 10 may use laser processing of the substrate 10 and cutting out the first dividing trench 103 and the second dividing trench 105; or etching the substrate 10 by chemical etching, and etching the first dividing trench 103 and the first Two divided trenches 105. The depths of the first dividing trench 103 and the second dividing trench 105 are between 10 μm and 500 //m. The first divided trenches 103 and the second divided trenches 105 are used to separate the epitaxial growth regions 101 on the substrate 10, and the number of the first divided trenches 103 and the second divided trenches 105 is larger. The greater the number of epitaxial growth regions 101, the smaller the size of each of the light-emitting diode wafers. Therefore, the number of the remote crystal growth regions 101 is determined mainly according to the size of the light-emitting diode chips. Finally, step S14 is performed to grow a plurality of epitaxial structures in the epitaxial growth regions, and each epitaxial structure corresponds to an epitaxial growth region to form a plurality of light emitting diode chips. The epitaxial structure is a gallium nitride-based epitaxial structure, and at least includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. The insect crystal structure is a well-known technology in the field of light emission, and will not be described herein. It can be seen from the above that the present invention provides a method for manufacturing a light-emitting diode wafer, which mainly divides a large-sized substrate into a plurality of small-sized odd-crystal growth regions, and grows a remote crystal structure on a mother-shaped growth region. The invention provides a method for manufacturing a plurality of light-emitting diode chips, which is to reduce the size of the light-emitting diode chip, thereby effectively preventing warpage of the substrate of the light-emitting diode chip, even if the substrate of the light-emitting diode chip is generated. The warpage also splits along the first divided trench and the second divided trench, so that the other light emitting diode chips are not damaged, and the yield of the process can be effectively improved. In summary, the present invention is novel, progressive and available for industry 099119354 Form No. A0101 Page 7 / Total 11 Page 0992034301-0 201145564 The user should meet the requirements of the patent application stipulated in the Patent Law of China. The invention patent application was filed, and the Prayer Council granted the patent as soon as possible. However, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and the shapes, structures, features, and spirits described in the claims are equally varied. And the modifications are all included in the scope of the patent application of the present invention [a brief description of the drawings] [0005] The first drawing: a flow chart of a preferred embodiment of the present invention; and the second drawing: another of the present invention A schematic view of the divided substrate of the preferred embodiment. [Major component symbol description] [0006] 10 Substrate 101 Stellite growth region 103 First division trench 105 Second division trench 099119354 Form No. A0101 Page 8 of 11 0992034301-0