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TW201145381A - Etching method and etching apparatus - Google Patents

Etching method and etching apparatus Download PDF

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Publication number
TW201145381A
TW201145381A TW100106269A TW100106269A TW201145381A TW 201145381 A TW201145381 A TW 201145381A TW 100106269 A TW100106269 A TW 100106269A TW 100106269 A TW100106269 A TW 100106269A TW 201145381 A TW201145381 A TW 201145381A
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substrate
temperature
processed
gas
processing
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TW100106269A
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TWI415185B (en
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Eiji Miyamoto
Masao Inoue
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Sekisui Chemical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Disclosed are an etching method and an etching apparatus, wherein, while suppressing or eliminating etching of the first surface (for instance, the main surface) of a substrate, such as a glass substrate, which includes a silicon-containing material and is to be treated, the second surface on the rear side is etched. The substrate to be treated (9) is disposed in the treatment atmosphere containing hydrogen fluoride and water. An adjusting means, including a heater (21), performs adjustment such that the temperature of the first surface (9a) of the substrate to be processed (9) is higher than the condensation points of the hydrogen fluoride and the water in the treatment atmosphere and that the temperature of the second surface (9b) is at such condensation points or below.

Description

201145381 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種蝕刻含有含矽物之被處理基板的方法 及裝置’尤其是關於一種適於將玻璃基板之背面蝕刻成輕 度粗面化之程度的方法及裝置。 【先前技術】 例如’於專利文獻1、2等中，記載有使包含氟化氫（HF) 之處理氣體接觸玻璃基板而触刻玻璃基板表面之含石夕物的 技術。上述處理氣體係藉由向包含例如cf4等氟系化合物 之原料氣體中添加水（H2〇)後，利用大氣壓放電使上述原 料氣體電漿化而形成。藉由電漿化，可生成氟化氫（式1}。 CF4+2H20 —4HF+C02 (式 1) 當處理氣體接觸玻璃基板時，氟化氫及水凝結，從而於 玻璃基板表面形成氫氟酸之凝結層。繼而，產生例如下式 2所示之飯刻反應，從而將玻璃基板表面之含矽物蝕刻。201145381 VI. Description of the Invention: [Technical Field] The present invention relates to a method and apparatus for etching a substrate containing a substrate containing germanium. In particular, it relates to a method for etching a back surface of a glass substrate into a lightly roughened surface. The method and device of the degree. [Prior Art] For example, in Patent Documents 1, 2 and the like, there is described a technique in which a processing gas containing hydrogen fluoride (HF) is brought into contact with a glass substrate to strike the surface of the glass substrate. The process gas system is formed by adding water (H2 〇) to a material gas containing a fluorine-based compound such as cf4, and then slurrying the raw material gas by atmospheric pressure discharge. Hydrogen fluoride can be produced by plasma formation (Formula 1}. CF4+2H20 —4HF+C02 (Formula 1) When the process gas contacts the glass substrate, hydrogen fluoride and water condense to form a condensation layer of hydrofluoric acid on the surface of the glass substrate. Then, a meal reaction such as shown in the following formula 2 is generated to etch the ruthenium containing the surface of the glass substrate.

Si02 + 4HF+H20 — SiF4+3H2〇(式 2) [先前技術文獻] [專利文獻] [專利文獻1]國際公開第W02008/102807號 [專利文獻2]日本專利特開2007-294642號公報 【發明内容】 [發明所欲解決之問題] 154223.doc 201145381 上述專利文獻1、2等所揭示之蝕刻處理技術可應用於例 如將玻璃基板之背面輕度粗化之處理等中。藉由將背面輕 度粗化，則將該玻璃基板载置於工作台上對主面（表面）進 行表面處理後，從工作台搬出之時，可容易地將玻璃基板 自工作台上分離。 上述蝕刻處理對玻璃基板背面之粗化度較佳為於可容易 地將玻璃基板自工作台上分離之範圍内儘可能地小。若粗 化度過大，則有其後對主面進行表面處理時玻璃基板難以 與工作台密接，或者玻璃基板之光學特性受到破壞之虞。 然而，認為蝕刻用之處理氣體會因擴散而亦接觸玻璃基 板之主面》若如此，則導致主面亦粗面化。 本發明係鑒於如上所述之情況而成者，其目的在於一面 抑制或防止玻璃基板等含有含矽物之被處理基板的第1面 (例如主面）受到蝕刻’ 一面蝕刻背面側之第2面。 [解決問題之技術手段] 為解決上述問題點，本發明方法係一種蝕刻方法，其特 徵在於：其係於接近大氣壓之壓力下，對含有含矽物且具 有第1面與該第1面之背面側之第2面的被處理基板進行蝕刻 者，其 將上述被處理基板配置於含有氟化氫蒸氣及水蒸氣之處 理環境中，並且 以上述第1面之溫度高於上述處理環境之氟化氫及水之 凝結點，且上述第2面之溫度在上述凝結點以下之方式進 行調節。 於被處理基板之第2面，藉由上述凝結點與第2面之溫度 I54223.doc 201145381 之關係，氟化氫及水於第2面上凝結而形成氫氟酸之凝結 層。藉此，構成第2面之含矽物產生蝕刻反應，從而可將 第2面触刻（包含粗化）。另一方面，於第1面，藉由上述凝 結點與第1面之溫度之關係，可避免形成凝結層。因此， 可抑制或防止第1面受到蝕刻。 較佳為上述第1面之溫度較上述凝結點高〇°C以上 ~40°C。更佳為上述第1面之溫度較上述凝結點高 5°C 〜30°C。 藉由將第1面之加熱度、進而應賦予第1面之熱量設為較 小，可避免或抑制熱傳遞至第2面，從而可防止或抑制第2 面之溫度上升。因此，可確實地使第2面之溫度在上述凝 結點以下。藉此，可一面確實地防止或抑制第1面受到蝕 刻，一面確實地钱刻第2面。 較佳為上述第2面之溫度較上述凝結點低〇。〇〜丨〇。〇。 藉由將凝結點與第2面之溫度之差設為較小，可使得只 要稍加熱第1面’即可使第1面之溫度超過上述凝結點。藉 由將第1面之加熱度、進而應賦予第丨面之熱量設為較小， 可避免或抑制熱傳遞至第2面，從而可防止或抑制第2面之 溫度上升。因此，可確實地使第2面之溫度在上述凝結點 以下。藉此，可一面確實地防止或抑制第1面之蝕刻，一 面確實地蝕刻第2面》 本發明之蝕刻方法可自與具有上述處理環境之處理空間 相連之搬入口將上述被處理基板搬入至上述處理空間，自 與上述處理空間相連之搬出口將上述被處理基板搬出，且 154223.doc -6- 201145381 於上述搬入口附近及上述搬出口附近抽吸氣體。 藉此，可於外部氣體通過搬入口或搬出口而到達至處理 空間之前，於搬入口或搬出口附近抽吸外部氣體而將其排 出，從而可防止外部氣體流入至處理空間内。上述流入外 部氣體之流量或流速係隨著被處理基板之搬入及搬出而產 生變動。即便產生此種變動，因藉由上述之抽吸可防止外 部氣體混入至處理環境中，故而亦可將處理環境之氣體組 成、進而氟化氫蒸氣分壓及水蒸氣分壓分別維持為與處理 氣體本身大致相同。其結果，可防止第2面之蝕刻處理變 侍不均勻。又，即便外部氣體之濕度高於處理環境之濕 度，亦可防止第1面側之處理環境之濕度上升，從而可防 止於第1面形成凝結層。因此，可避免第i面亦受到蝕刻。 本發明裝置之特徵在於：其係於接近大氣壓之壓力且濕 度大於0%之處理空間内，對含有含矽物且具有第丨面與該 第1面之背面側之第2面的被處理基板進行蝕刻者，其包含： 喷出喷嘴，其係將含有氟化氫及水中之至少氟化氫的處 理氣體供給至上述處理空間内，使上述處理氣體接觸上述 被處理基板之至少上述第2面；及 調節機構，其係以上述第丨面之溫度高於上述處理空間 中的氟化氬及水之凝結點，且上述第2面之溫度在上述凝 結點以下之方式進行調節。 本發明裝置將來自於噴出噴嘴之處理氣體混合於處理空 間内之處理環境中。由於處理氣體含有氟化氫及水中之至 少說化氫’且處理空間之濕度超過’故而處理環境含 154223.doc 201145381 有氣化風蒸氣及水暮惫。贫由 ^ ^孩處理環境接觸被處理物。此 時，於被處理物之第2面，藉由上述調節機構m结 點與第2面之溫度之關係的調節，處理環境中之氟化氫及 水於被處理物之第2面上凝結而形成氫㈣之凝結層。因 此，引起構成第2面之含矽物的蝕刻反應，從而可將第2面 蝕刻（包含粗化）。另一方面，於被處理物之第丨面，藉由上 述調節機構對上述凝結點與第！面之溫度之關係的調節， 可避免處理環境中之氟化氫及水於第W上凝結，從而可 避免形成氫氟酸之凝結層。因此，可抑制或防止構成第工 面之含矽物的蝕刻反應。 上述處理空間之濕度尸、要超過〇%即可，且只要在1〇〇% RH以下即可。 上述調節機構可為控制被處理基板之第丨面之溫度者， 亦可為控制第2面之溫度者，亦可為控制處理氣體之氟化 氫分壓或水蒸氣分壓者，亦可為控制處理空間内之處理環 境之水蒸氣分壓者，或者亦可為控制流入至處理空間内之 外部氣體之水蒸氣分壓者。 較佳為上述調節機構包含加熱器，該加熱器係隔著上述 處理空間中之配置上述被處理基板之位置而於上述噴出噴 嘴的相反側接近上述位置而配置’且上述加熱器之設定溫 度較上述凝結點高〇°C以上〜6〇1。 藉此’可確實地使被處理基板之第1面之溫度高於處理 環境之氟化氫及水之凝結點。藉由將第1面之加熱度、進 而將應賦予第1面之熱量設為較小，可避免或抑制熱傳遞 154223.doc 201145381 至第2面’從而可防止或抑制第2面之溫度上升。因此，可 確貫地使上述第2面之溫度在上述凝結點以下。藉此，可 一面確實地抑制或防止第1面受到蝕刻，一面確實地蝕刻 第2面。 於使被處理基板相對於上述喷出喷嘴而相對移動之情形 時，較佳為考慮該移動速度而設定上述加熱器之設定溫 度。 例如’當上述移動速度相對較大時’使上述設定溫度相 對高於上述第1面之所期望溫度。藉此，可縮短至上述第1 面達到上述所期望溫度所需之時間。另一方面，因移動速 度相對較大，故而可於第2面之溫度高於上述凝結點之前 結束處理。 當上述移動速度相對較小時，亦可使上述設定溫度與上 述所期望溫度大致相同。藉此，可避免被處理基板之溫度 大幅超過上述所期望溫度，另一方面，若移動速度較小則 加熱時間延長，但藉由將上述設定溫度及上述所期望溫度 设定為稍高於上述凝結點，可將第2面之溫度維持在上述 凝結點以下。 較佳為上述調節機構將上述第2面之溫度調節為較上述 凝結點低〇。〇〜i〇°c。 藉由將處理環境之氟化氫及水之凝結點與第2面之溫度 之差設為較小，則只要稍加熱第1面，即可使第1面之溫度 大於上述凝結點。藉由將第丨面之加熱度、進而將應賦予 第1面之熱量設為較小，可避免或抑制熱傳遞至第2面，從 154223.doc 201145381 可防止或抑制第2面之溫度上升。因此，可確實地使上 述第2面之溫度在上述凝結點以下。藉此，可一面確實地 抑制或防止第1面受到蝕刻，-面確實地蝕刻第2面。 此處’所謂接近大氣壓之壓力，係指 1·〇13χ 1〇〜50.663xlO4 Pa之範圍，若考慮壓力調整之容易 化或裝置構成之簡便化，則較佳為丨333χ1〇4〜1〇 664χΐ〇4Si02 + 4HF + H20 - SiF4 + 3H2 〇 (Formula 2) [Prior Art Document] [Patent Document 1] [Patent Document 1] International Publication No. WO2008/102807 [Patent Document 2] Japanese Patent Laid-Open No. 2007-294642 [Problems to be Solved by the Invention] 154223.doc 201145381 The etching treatment technique disclosed in Patent Documents 1, 2, and the like can be applied to, for example, a process of slightly roughening the back surface of a glass substrate. By lightly roughening the back surface, the glass substrate is placed on a table and the main surface (surface) is surface-treated, and then the glass substrate can be easily separated from the table when being carried out from the stage. The degree of roughening of the back surface of the glass substrate by the above etching treatment is preferably as small as possible within a range in which the glass substrate can be easily separated from the stage. When the degree of roughening is too large, the glass substrate is hardly adhered to the table when the surface is surface-treated, or the optical properties of the glass substrate are deteriorated. However, it is considered that the processing gas for etching also contacts the main surface of the glass substrate due to diffusion. If this is the case, the main surface is also roughened. The present invention has been made in view of the above-described circumstances, and it is an object of the present invention to suppress or prevent the first surface (for example, the main surface) of a substrate containing a substrate containing a substrate such as a glass substrate from being etched while etching the second side of the back surface side. surface. [Technical means for solving the problem] In order to solve the above problems, the method of the present invention is an etching method characterized in that it is contained under a pressure close to atmospheric pressure, and contains a ruthenium-containing material and has a first surface and the first surface. The substrate to be processed on the second surface on the back side is etched, and the substrate to be processed is placed in a treatment environment containing hydrogen fluoride vapor and water vapor, and the temperature of the first surface is higher than the hydrogen fluoride and water in the treatment environment. The condensation point is adjusted such that the temperature of the second surface is below the condensation point. On the second surface of the substrate to be processed, hydrogen fluoride and water are condensed on the second surface by the relationship between the condensation point and the temperature of the second surface I54223.doc 201145381 to form a condensation layer of hydrofluoric acid. Thereby, the ruthenium constituting the second surface generates an etching reaction, so that the second surface can be touched (including roughening). On the other hand, on the first surface, the formation of the condensation layer can be avoided by the relationship between the condensation point and the temperature of the first surface. Therefore, the first surface can be suppressed or prevented from being etched. Preferably, the temperature of the first surface is higher than the condensation point by 〇 ° C or more and 40 ° C. More preferably, the temperature of the first surface is 5 ° C to 30 ° C higher than the condensation point. By heating the first surface and further the amount of heat to be applied to the first surface, heat can be prevented or suppressed from being transmitted to the second surface, and the temperature rise of the second surface can be prevented or suppressed. Therefore, the temperature of the second surface can be surely made lower than the above condensation point. Thereby, it is possible to surely prevent or suppress the first surface from being etched, and to surely engrave the second surface. Preferably, the temperature of the second surface is lower than the condensation point. 〇~丨〇. Hey. By setting the difference between the temperature of the condensing point and the second surface to be small, the temperature of the first surface can be made to exceed the condensing point as long as the first surface is slightly heated. By making the heating degree of the first surface and the amount of heat to be applied to the second surface to be small, heat can be prevented or suppressed from being transmitted to the second surface, and the temperature rise of the second surface can be prevented or suppressed. Therefore, the temperature of the second surface can be surely made lower than the above condensation point. Thereby, the second surface can be surely etched while reliably preventing or suppressing the etching of the first surface. The etching method of the present invention can carry the substrate to be processed from the inlet connected to the processing space having the processing environment. The processing space carries out the substrate to be processed from a transfer port connected to the processing space, and 154223.doc -6- 201145381 sucks gas near the transfer port and near the transfer port. Thereby, external air can be sucked and discharged in the vicinity of the inlet or the outlet before the outside air reaches the processing space through the inlet or the outlet, thereby preventing the outside air from flowing into the processing space. The flow rate or flow rate of the inflowing of the external gas varies depending on the loading and unloading of the substrate to be processed. Even if such a change occurs, the external gas can be prevented from being mixed into the processing environment by the above-described suction, so that the gas composition of the treatment environment, the partial pressure of hydrogen fluoride vapor, and the partial pressure of water vapor can be maintained separately from the process gas itself. Roughly the same. As a result, the etching treatment of the second surface can be prevented from becoming uneven. Further, even if the humidity of the outside air is higher than the humidity of the processing environment, the humidity of the processing environment on the first surface side can be prevented from rising, and the formation of the condensation layer on the first surface can be prevented. Therefore, it is possible to prevent the i-th surface from being etched. The apparatus of the present invention is characterized in that it is a treatment substrate containing a ruthenium-containing surface and a second surface on the back side of the first surface in a treatment space having a pressure close to atmospheric pressure and a humidity of more than 0%. The etcher includes: a discharge nozzle that supplies a processing gas containing hydrogen fluoride and at least hydrogen fluoride in water to the processing space, and the processing gas contacts at least the second surface of the substrate to be processed; and an adjustment mechanism The temperature of the first surface is higher than the condensation point of the argon fluoride and the water in the processing space, and the temperature of the second surface is adjusted to be lower than the condensation point. The apparatus of the present invention mixes process gases from the discharge nozzles into a processing environment within the process space. Since the process gas contains hydrogen fluoride and at least hydrogen in water and the humidity of the treatment space exceeds 'therefore, the treatment environment contains 154223.doc 201145381 with vaporized steam and leeches. Poor by ^ ^ child handling environmental contact with the processed material. At this time, on the second surface of the object to be processed, the relationship between the temperature of the node of the adjustment mechanism m and the temperature of the second surface is adjusted, and hydrogen fluoride and water in the treatment environment are condensed on the second surface of the object to be processed. Condensation layer of hydrogen (four). Therefore, the etching reaction of the ruthenium containing the second surface is caused, and the second surface can be etched (including roughening). On the other hand, on the third side of the object to be processed, the above-mentioned condensation point and the first by the above-mentioned adjustment mechanism! The relationship between the temperature of the surface can be adjusted to avoid condensation of hydrogen fluoride and water on the W in the treatment environment, thereby avoiding the formation of a condensation layer of hydrofluoric acid. Therefore, the etching reaction of the ruthenium constituting the first working surface can be suppressed or prevented. The humidity of the above-mentioned processing space may be more than 〇%, and may be less than or equal to 1% RH. The adjusting mechanism may be a temperature for controlling the second surface of the substrate to be processed, or a temperature for controlling the second surface, or a partial pressure of hydrogen fluoride or a partial pressure of water vapor for controlling the processing gas, or may be a control treatment. The water vapor partial pressure of the treatment environment in the space may also be the water vapor partial pressure that controls the external gas flowing into the treatment space. Preferably, the adjustment mechanism includes a heater that is disposed closer to the position on the opposite side of the discharge nozzle than the position of the substrate to be processed in the processing space, and the heater is set at a temperature higher than The above condensation point is higher than °C~6〇1. Thereby, the temperature of the first surface of the substrate to be processed can be surely made higher than the condensation point of hydrogen fluoride and water in the treatment environment. By setting the heating degree of the first surface and the amount of heat to be applied to the first surface to be small, heat transfer 154223.doc 201145381 to the second surface can be avoided or suppressed, thereby preventing or suppressing the temperature rise of the second surface. . Therefore, the temperature of the second surface can be surely made lower than the condensation point. Thereby, the second surface can be surely etched while reliably suppressing or preventing the first surface from being etched. In the case where the substrate to be processed is relatively moved with respect to the discharge nozzle, it is preferable to set the set temperature of the heater in consideration of the moving speed. For example, when the moving speed is relatively large, the set temperature is relatively higher than the desired temperature of the first surface. Thereby, the time required for the first surface to reach the above-mentioned desired temperature can be shortened. On the other hand, since the moving speed is relatively large, the processing can be ended before the temperature of the second surface is higher than the condensation point. When the moving speed is relatively small, the set temperature may be made substantially the same as the desired temperature. Thereby, the temperature of the substrate to be processed can be prevented from greatly exceeding the above-mentioned desired temperature. On the other hand, if the moving speed is small, the heating time is prolonged, but the set temperature and the desired temperature are set to be slightly higher than the above. At the condensation point, the temperature of the second surface can be maintained below the condensation point. Preferably, the adjustment mechanism adjusts the temperature of the second surface to be lower than the condensation point. 〇~i〇°c. By setting the difference between the condensation point of hydrogen fluoride and water in the treatment environment and the temperature of the second surface to be small, the temperature of the first surface can be made larger than the condensation point by heating the first surface slightly. By heating the first surface and further reducing the amount of heat to be applied to the first surface, heat can be prevented or suppressed from being transmitted to the second surface. From 154223.doc 201145381, the temperature rise of the second surface can be prevented or suppressed. . Therefore, the temperature of the second surface can be surely made lower than the condensation point. Thereby, the first surface can be surely suppressed or prevented from being etched, and the second surface can be surely etched. Here, the term "pressure close to atmospheric pressure" refers to the range of 1·〇13χ 1〇~50.663xlO4 Pa. If the pressure adjustment is easy or the device configuration is simplified, it is preferably 丨333χ1〇4~1〇664χΐ. 〇4

Pa’ 更佳為 9·331χ104 〜1〇·397χ1〇4ρ&。 [發明之效果] 利用本發明，可一面抑制或防止被處理基板之第丨面受 到触刻，一面触刻背面側之第2面。 【實施方式】 以下，根據圖式對本發明之實施形態進行說明。 圖1及圖2係表示本發明之第i實施形態者。被處理基板9 係例如應成為平板顯示器等半導體裝置之玻璃基板。玻璃 基板9包含Si〇2等含矽物作為主成分。玻璃基板9之厚度例 如為0.5 mm~0.7 mm左右。玻璃基板9形成四角形之平板 狀，具有表側之第1面9a(主面）、與其背面側之第2面9b(背 面）。第1面9a係應設置絕緣層、導電層、半導體層等各種 電子元件層之主面。第2面9b係成為藉由大氣壓蝕刻裝置i 進行之粗化（蝕刻）處理之對象的背面。對第2面9b進行粗化 處理後，對第1面9a進行用於形成上述各種電子元件層之 表面處理。 如圖1所示，大氣壓蝕刻裝置1包括原料氣體供給機構 10、處理部20、及搬送機構30。原料氣體供給機構丨〇包含 154223.doc -10- 201145381 氟系原料供給部11、及水添加部12。 氟系原料供給部11供給成為钮刻用之處理氣體（钱刻劑） 之原料氣體。原料氣體含有含氟氣體與載體氣體。含氟氣 體係使用CF4。作為含氟氣體，亦可使用C2F6、C3F6、C3f8 等其他PFC(全氟碳）’ CHF3、CH2F2、CH3F等HFC(氫氟 碳），SF6、NF3、XA等PFC及HFC以外之含氟化合物來代 替 CF4。 載體氣體除具有搬送含氟氣體之功能以外，亦具有作為 稀釋含氣氣體之稀釋氣體之功能，作為後述之產生電毁放 電之放電氣體之功能等。載體氣體較佳為使用惰性氣體。 成為載體氣體之惰性氣體可舉出：氦氣、氬氣、氖氣、氙 亂等稀有氣體或氮氣。此處，作為載體氣體係使用氬氣 (Ar)。含氟氣體與載體氣體之流量比（CP# : αγ)較佳為1 ·· 1000〜1 : 10。亦可省略載體氣體。 水添加部12向上述原料氣體（CF4+Ar)中添加水（h2〇)而 對原料氣體加濕。藉由調節該水添加量，可調節原料氣體 之水蒸氣分壓、進而調節處理氣體之氟化氫分壓及水蒸氣 分壓。水添加部12係由例如包含恆溫槽等槽之加濕器所構 成。該槽内積蓄有液態之水。將來自於供給部丨丨之原料氣 體供給至較上述槽之水面之上側部分，與上述上側部分之 飽和水蒸氣混合。或者，亦可藉由使來自於供給部u之原 料氣體在上述槽内之水中起泡，而向原料氣體中添加水蒸 氣。藉由調節上述槽之溫度而調節蒸氣庄，藉此亦可調節 水添加量。較佳為以滿足第2面913之_處理性能之^ 154223.doc 201145381 而调整水添加部12之水分添加量、進而處理氣體之露點。 添加水之前之原料氣體的露點較佳為_4〇〇c以下。將露 點-40 C換算為水蒸氣分壓為0.03 Torr左右，換算為體積、·農 度為0.004%左右’原料氣體中之水蒸氣量幾乎為灾。 添加水之後之原料氣體中的水分量可根據添加水之前之 原料氣體之路點、及水添加部12中之水之氣化量而叶算 出》亦可使用傅裏葉轉換型紅外光譜儀（FTIR)測定添加水 之後之原料氣體中的水分量。 如圖1所示’處理部20包含頂板21、底板22、喷出喷嘴 40及抽吸嘴50〇頂板21形成為水平之板狀。頂板21之沿與 圖1之紙面正交之方向（以下稱為「y方向」）之寬度尺寸係 稍許大於被處理基板9之y方向之寬度尺寸。頂板21係由板 式加熱器所構成，兼作為後述之溫度調節機構。頂板2 i即 板式加熱器21之外殼係由鋁等金屬所構成。較佳為於頂板 21之表面中之至少下表面設置聚四氟乙烯等的高耐氟性、 耐電漿性之樹脂覆膜。 底板22係形成為水平之板狀，與頂板21平行地配置於頂 板21之下方。底板22之y方向（圖2之左右方向）之寬度尺寸 係稍許大於被處理基板9之y方向之寬度尺寸》底板22可由 鋁等金屬、或樹脂、或者玻璃板構成。於底板22由金屬所 構成之情形時，較佳為於其表面中之至少上表面設置聚四 氣乙烯等的高耐氟性、耐電漿性之樹脂覆膜。 喷出噴嘴40係配置於處理部20的圖1之左右方向（以下稱 為「X方向」）之一端部（圖！中為右方）。如圖1及圖2所示， I54223.doc 12 201145381 喷出噴嘴40形成為沿y方向較長延伸之容器狀。於噴出嘴 嘴4〇之上端面設置有喷出口41。喷出口 41形成為沿y方向 延伸之狹縫狀4出σ41之沿以向之長度係料大於被 處理基板9之沿y方向之寬度尺寸。 喷出喷嘴40連接於底板22之乂方向之一端部（圖i中為右 端部）。喷出喷嘴4G之上端面與底板22之上表面成為同— 面。頂板21之-端部（圖！中為右端部）相比底板22向—端側 (圖it為右端側）伸出，覆蓋於喷出噴嘴4〇之上側。在頂板 21之一端部與喷出喷嘴4〇之間形成有搬入口 ％。 抽吸嘴50係配置於處理部2〇之乂方向之另一端部（圖王中 為左端部）。抽吸嘴50形成為沿y方向較長延伸之容器狀。 於抽吸嘴50之上端面開出有吸入口51。吸入口51形成為沿 y方向延伸之狹縫狀"及入口51之沿y方向之長度係稍許： 於被處理基板9之沿y方向之寬度尺寸。 抽吸嘴50連接於底板22之χ方向之另一端部（圖】中為左 端部卜抽吸嘴50之上端面與底板22之上表面成為同一 面。頂板2i之另一端部（圖i中為左端部）相比底板^向另一 端側伸出，覆蓋在抽吸嘴50之上侧。在頂板21之另一端部 與抽吸嘴50之間形成有搬出口 27。 在處理口P 20之上側之頂板2 i與下側之構成部22、4〇、％ 之間，形成有處理部内空間29。於處理部内空間29之父方 向之一端部（圖1中為右端部）連接有搬入口 26。於處理部内 工間29之X方向之另一端部（圖i中為左端部）連接有搬出口 27。處理部内空間29之X方向之兩端部經由搬入出口26、 154223.doc -13- 201145381 2J而與處理部2〇外部之空間相連。如圖2所示，處理部内 門29之y方向之兩端部分別藉由側壁Μ而封閉。 如圖1所示，處理部内空間29的自喷出口41〇方向之位 置起至吸入口 51之X方向之位置為止的部分構成處理空間 23處理部2〇的上側頂板21、下側構成部u、％與兩 側壁24構成處理空間形成部。處理空間23經由較噴出叫 位於X方向之-端側的處理部内空間29與搬人口％相連。 並且，處理空間23經由較吸入口 51位於乂方向之另—端側 的處理部内空間29與搬出口27相連。處理空間23之厚度心 等於頂板2i之下表面與底板22之上表面之間的間隔，^如〇 d〇=5 mm〜1〇 mm左右。 於喷出喷嘴40之下部設置有整流部42。詳細之圖示省 略，整流部42包含沿y方向延伸之腔室或狹縫、或沿y方向 排列之多個小孔之列等。添加水之後之上述原料氣體 (CF4+Ar+H2〇)係導入至整流部42而使其於y方向上均勻 化。 於喷出喷嘴40之内部收納有電漿生成部6〇。電漿生成部 60包含至少一對電極61、61。該等電極61、61分別沿y方 向延伸。於至少一個電極61之對向面設置有固體介電質層 (圖示省略）。一個電極61連接於電源（圖示省略）β另一個 電極61電性接地。於一對電極61間形成大致大氣壓之電聚 放電空間62。放電空間62係形成為與電極61同樣地沿7方 向延伸之狹縫狀。於放電空間62内，使上述原料氣體 (CF4+Ar+H2〇)電漿化（包含分解、激發、活化、自由基 Ι 54223.doc -Μ 201145381 化、離子化等）。藉此’原料氣體成分分解而生成包含敗 化氫（HF)、COF2等氟系反應成分之處理氣體（式1等上 述氟系反應成分中之C0F2可進一步與水反應而轉化為氟化 氫（式3)。 C0F2+H20—2HF+C〇2 (式 3) 於本實施形態中’係以原料氣體中之h2o幾乎全部參與 化II之生成反應（式1 '式3)的方式設定水添加部12之添 加置。因此，處理氣體中之H2〇含量為較小之實質上可忽 視之程度或者為0°/〇。 處理氣體除上述氟系反應成分以外，亦包含未分解之原 料氣體成分（CF4、Ar、HzO) »該處理氣體自喷出口 41向上 方喷出。處理氣體之喷出流於y方向上均勻。 圖示省略’於抽吸嘴50上連接有抽吸泵等排氣機構。藉 由驅動上述排氣機構’可將處理空間23内之氣體吸入至抽 吸嘴50之吸入口 51且排出《自抽吸嘴5〇之排氣流量大於自 喷出喷嘴40之處理氣體之供給流量。相當於上述排氣流量 與供給流量之差之量的外部氣體（空氣等）自搬入口26及搬 出口 27流入至處理部内空間29。來自於搬入口 26之外部氣 體經過喷出口 41而流入至處理空間23内。另一方面，來自 於搬出口 27之外部氣體由吸入口 51吸入而幾乎不會到達處 理空間23中。因此’處理空間23内之處理環境成為來自於 上述搬入口 26之流入外部氣體與處理氣體之混合氣體。以 下’/、要無特別說明，則「流入外部氣體」係指自上述搬 I54223.doc •15· 201145381 入口 26流入至處理空間23内之外部氣體。 流入外部氣體通常含有水分且濕度至少超過〇%。於本 實施形態中’設定為自抽吸嘴50之排氣流量充分大於處理 氣體之供給流量，且上述流入外部氣體之流量充分大於處 理氣體之供給流量（例如1 〇倍左右）^因此，與處理氣體之 含水量極小共同作用，處理空間23内之處理環境之水蒸氣 分壓與外部氣體之水蒸氣分壓大致相等。 搬送機構30係包含設置於處理部20之下部之輥軸31及搬 送親32。複數個輥軸31分別使軸線朝向寬度方向y而於乂方 向上隔開間隔平行排列。於各棍軸3 1之轴方向y上，隔開 間隔而設置有複數個搬送輥32 ^搬送輥32之上端部通過底 板22之輥孔25而較底板22之上表面向上突出，面向處理空 間23内。搬送輥32自底板22上表面之突出量與被處理基板 9之第2面9b與喷出口 41之間的距離對應（工作距離（working distance)WD)。工作距離WD例如為WD=2 mm〜10 mm左 右0 搬送機構3 0 —面水平地支持被處理基板9 一面沿X方向朝 向箭頭a之指向（圖1中為左方）搬送。藉此，將被處理基板9 自搬入口 26插入至處理空間23内，通過處理空間23内後， 自搬出口 27搬出。搬送機構30的被處理基板9之搬送速度 較佳為0.1 m/min〜20 m/min左右。搬送機構3〇兼作支持被 處理基板9而將其配置於處理空間23内之支持機構。被處 理基板9之第1面9a朝上，第2面9b朝下。 進而’大氣壓蝕刻裝置1包括調節機構。上述調節機構 154223.doc -16- 201145381 利用被處理基板9之第1面9a及第2面9b之溫度與處理空間 23内之氟化氫與水之混合體系之凝結點的關係來調節被處 理基板9之第1面9a及第2面9b之溫度。於本實施形態中， 頂板21如上所述由板式加熱器所構成，其係提供為調節機 構之主要要素。頂板即板式加熱器21係隔著處理空間23内 之配置被處理基板9之位置而配置於喷出噴嘴40之相反 側，且係接近於上述位置而配置。頂板即加熱器2丨之下表 面與配置於上述位置之被處理基板9之第1面9a之間的距離 d!較佳為例如d丨=2 mm〜10 mm左右。加熱器21之溫度可於 室溫至例如50°C左右之範圍内設定。加熱器21之設定溫度 係根據外部氣體之濕度、進而處理空間23内之處理環境之 水蒸氣分壓、處理氣體進而處理空間23内之處理環境之氟 化氫分壓等而設定。 對利用如上述般所構成之大氣壓蝕刻裝置1對被處理基 板9進行淺度蝕刻之方法進行說明。 利用水添加部12向來自於氟系原料供給部之原料氣體 (CFi+Ar)中添加特定量之水蒸氣（h2〇)，而獲得加濕原料 氣體。利用整流部42使該加濕原料氣體（CF4+Ar+H2〇)於寬 度方向y上均勻化後，利用電漿生成部6〇使之電漿化。藉 此，生成含有氟化氫及水中之至少氟化氫的處理氣體。藉 由調節水添加部12之水蒸氣添加量等，可調節處理氣體之 氟化氫分壓及水蒸氣分壓。此處，原料氣體中之水分幾乎 全部消耗於生成氟化氫，處理氣體之水蒸氣分壓實質上為 〇。處理氣體之溫度在室溫附近。 154223.doc •17· 201145381 將該處理氣體自喷出口41喷出而供給至處理空間23内。 同時，將處理空間23内之氣體抽吸至抽吸嘴5〇令而排出。 將該排氣流量設為充分大於處理氣體供給流量。因此，充 分多於處理氣體之外部氣體捲入至處理空間23内與處理氣 體混合。並且’處理空間23内之處理環境（處理氣體與上 述流入外。卩氣體之混合氣體）之水蒸氣分壓與外部氣體之 水蒸氣分壓大致相等。處理環境之說化氮分壓與處理氣體 之戴化氫分壓相等°根據處理環境之氟化氫分壓及水蒸氣 分壓而確定該處理環境中之氟化氫及水之凝結點。即，確 疋生成氫氟酸之凝結層之臨界溫度（圖〗〗）。 被處理基板9之初期溫度通常為室溫或15°c〜35°c左右。 此處，所謂被處理基板9之初期溫度，係指在即將向處理 部23内搬入被處理基板9之前被處理基板9之溫度。通常， 在即將進行上述搬入之前，被處理基板9整體為上述初期 皿度。因此，第1面9a及第2面9b為上述初期溫度》將該被 處理基板9自搬入口 26插入至處理空間23内，沿圖}之箭頭 a之方向自處理空間23之一端側（圖1中為右端側）向另一端 側（圖1中為左端側）搬送。如此，則被處理基板9覆蓋於喷 出噴嘴40之上方，自喷出口 41喷出之處理氣體與被處理基 板9之至少第2面9b接觸。另外，擴散至處理空間23内之處 理氣體之一部分與被處理基板9之第1面9a接觸。 如上所述，處理氣體之喷出溫度與被處理基板9之初期 溫度均在室溫附近，兩者間之溫差較小。因此，被處理基 板9之溫度幾乎不會因處理氣體之吹附而發生變化。 154223.doc 18. 201145381 於搬入上述被處理基板9之前，預先將頂板即加熱器以 加熱至设定溫度，並保持於該設定溫度。上述加熱器21之 设定溫度係設定為高於處理環境中之氟化氫及水之凝結 點，較佳為稍超出上述凝結點。例如，將上述加熱器21之 設定溫度調節為較上述凝結點高〇艺以上〜6(rc左右。該加 熱器21之熱係以非接觸之方式傳遞至導入於處理空間内 之破處理基板9之第1面9a。藉此，可將第1面％加熱至所 期望溫度。上述所期望溫度係高於上述凝結點，且大致等 於上述設定溫度或低於設定溫度，例如較凝結點高〇£>c以 上〜40t。藉由減小加熱器21與被處理基板9之間之距離 di，可確實地對第1面9a進行加熱（溫度調節）。 加熱上述被處理基板9之第丄面“時，儘量將第2面外之 /JBL度維持在上述凝結點以下（例如較凝結點低〇 a。〜1 〇）， 較佳為大致維持為上述初期溫度。即，儘量使來自於加熱 器21之熱幾乎不傳遞至被處理基板9之第2面9b。如上所 述，藉由減小上述凝結點與被處理基板9之初期溫度之 差，使得只要稍加熱被處理基板9之第1面知即可達到高於 上述凝結點之設定溫度，可減少加熱器21對被處理基板9 之第1面9a賦予之熱量。藉此，可抑制或阻止熱傳遞至被 處理基板9之第2面9b。 亦可調節搬送機構30之搬送速度，以在熱到達至第2面 9b之前將被處理基板9自處理空間23、進而搬出口 ”搬 出。於该情形時，搬送機構3〇成為申請專利範圍之「調節 機構」之要素。上述加熱器21之設定溫度係考慮搬送速度 154223.doc •19· 201145381 而設定。於搬送速度相對較快時，使加熱器21之設定溫度 充分高於第1面9a之所期望溫度。藉此，可縮短第1面9a達 到所期望溫度所需之時間。另一方面，藉由高速搬送，可 於第2面9b之溫度高於凝結點之前將被處理基板9自搬出口 2 7搬出。相對於此’於搬送速度相對較小時，可將加熱器 21之設定溫度設為與第1面9a之所期望溫度大致相同。藉 此’可避免被處理基板9之溫度高於上述所期望溫度。另 一方面’於低速搬送之情形時加熱時間延長，但藉由將設 定溫度設定為稍高於上述凝結點，可使第2面9b之溫度維 持在上述凝結點以下。例如，於處理氣體之溫度為室溫， 且第1面9a之所期望溫度為4〇°C〜50°C之情形時，當進行搬 送速度為5 mm/sec〜10 mm/sec左右之高速搬送時，使加熱 器21之設定溫度較第！面9a之所期望溫度高丨〇。〇〜2〇它左 右。相對於此’進行搬送速度為1 min/secA右以下之低速 搬送時，使加熱器21之設定溫度與第1面％之所期望溫度 大致相同。 因第2面9b之溫度在上述凝結點以下，故而當處理環境 中之氟化氫蒸氣及水蒸氣接觸第2面913時凝結而形成氫氟 酸之凝結層。其結果，構成第2面9b2Si〇2等含矽物產生 蝕刻反應，從而可將第2面9b輕度粗化。 另方面，被處理基板9之第1面9a由於溫度高於上述凝 結點’故而即便處理環境中之氟化氫蒸氣及水蒸氣接觸第 1面％亦不會凝結。因此，可防止於第1面9a形成凝結層。 其結果，可防止第1面9a受到蝕刻，從而可將第丄面“之表 154223.doc •20· 201145381 面狀態保持為良好。 藉由上述大氣壓蝕刻裝置丨進行粗化處理後，將被處理 基板9搬送至另一表面處理裝置（未圖示）。將被處理基板9 載置於該表面處理裝置之工作台上，使第2面9b接觸並吸 附於工作台。由於第2面913之粗化度較小，故而可將被處 理基板9確實地吸附保持於工作台。接著，對第1面％實施 洗淨、表面改質、蝕刻、灰化、成膜等表面處理。第1面 9a因於上述粗面化處理中避免了粗面化，故而可進行良好 之表面處理。進而，可使藉由上述表面處理所形成之絕緣 層、導電層、半導體層等各種電子元件層具有優良品質。 於第1面9a之表面處理後，將被處理基板9自工作台搬出。 由於第2面9b上藉由上述粗面化處理而形成有微小凹凸， 故而可容易地將被處理基板9自工作台分離。其結果，可 防止被處理基板9彎曲或破裂。 其次，對本發明之其他實施形態進行說明。於以下之實 施形態中，對於與上述之形態重複之部分，於圖式上標註 相同符號且適當省略說明。 如圖3及圖4所示，於第2實施形態之大氣壓蝕刻裝置u 中，被處理基板9之搬送機構30包含搬入用輥式輸送機 33、處理用輥式輸送機34、及搬出用輥式輸送機35。各轉 式輸送機33、34、35具有沿X方向（圖3之左右方向）排列之 複數個輥軸31，及設置於各輥軸31之搬送輥32。搬入用輥 式輸送機33係配置於較處理部2〇偏X方向之一端側（圖3中 為右端側）’將被處理基板9搬入至處理空間23。處理用轉 154223.doc •21· 201145381 式輸送機34係設置於底板22之下部，搬送處理空間23内之 被處理基板9。搬出用輥式輸送機35係配置於較處理部2〇 偏X方向之另一端側（圖3中為左端側），將被處理基板9自處 理空間23搬出。 於底板22之下部，設置有用於處理用輥式輸送機34之複 數個防護罩70。防護罩70與處理用輥式輸送機34之輥軸3 j 對應。防護罩70形成為沿輥軸3 1之軸線方向y較長延 伸之谷器狀》各防護罩7〇内收容有對應之輥軸31及搬送輥 32。防護罩70之上表面開口，且觸抵底板22之下表面。 防護罩70可由鋁等金屬構成，亦可由氣乙烯等樹脂構 成。亦可於防護罩70之内面設置聚四氟乙稀等高耐氟性、 耐電漿性之樹脂覆膜》 如圖4所示，處理用輥式輸送機34之輥軸31貫通防護罩 7〇之長度方向兩側的端壁74。於端壁74設置有氣密軸承 75。氣密軸承75以可旋轉之方式支持輥軸31。並且，氣密 軸承75將輥軸31與端壁74之間氣密地密封。氣密軸承乃之 構成構件較佳為由聚四氟乙烯等高耐氟性、耐電漿性之樹 脂所構成。 防邊罩70之内部經由親孔25僅與處理空間23連通。 根據第2實施形態，可防止大氣壓蝕刻裝置丨八下方之外 部氣體（空氣等）通過輥孔25而導入至處理空間23内。又， 當處理空間23之處理氣體通魏孔25向底板22之下側；戈漏 時，可將該處理氣體密閉於防護罩7〇之内部。因此，可防 止處理氣體向外部洩漏。 154223.doc -22· 201145381 第2實施形態之抽吸嘴50係配置於底板22之x方向之中間 部。頂板21及底板22較抽吸嘴50向X方向之另一端侧（圖3 中為左端側）即基板9之搬送方向之下游侧伸出。可僅將頂 板21中的對應喷出喷嘴40與抽吸嘴50之間的部分作為調節 機構而保持為設定溫度，亦可將整個頂板21作為調節機構 而保持為設定溫度。 圖5及圖6係表示本發明之第3實施形態者。本實施形態 之大氣壓钱刻裝置1B不具有底板22。藉由喷出喷嘴4〇之整 個上表面與頂板21之下表面而形成處理空間23。於處理空 間23内存在包含HF蒸氣及水蒸氣之處理環境。藉由調節喷 出喷嘴4〇之X方向之長度，可調節處理空間23之長度，進 而可增加或減少被處理基板9與處理環境接觸之處理時 間。其結果，可將第2面9b之蝕刻量調節為所期望之量。 如圖5所示，大氣壓㈣裝置1B包括氣體抽吸系統8〇。 氣體抽吸系統80包含抽吸泵81及一對辅助板82、料。一對 辅助板82、84係夾持喷出喷嘴4()而垂直地配置於X方向之 兩側。辅助板82、84之上端部以與喷出嗔嘴4q之上表面位 於同-面之方式對齊。輔助板82、84之厚度❹為幾_〜 十幾mm左右，此處為5 mm左右。 如圖6所示，搬入側(时為右側)之辅助板咖喷出喷 嘴40之搬入側之外面於與x方向正交之y方向上延伸。如圖 5及圖6所示，於輔助板82與嗔出喷嘴4〇之搬入側之外面之 間形成有抽吸路徑83。抽吸路栌以夕τ 81 π _ 下端部連接於抽吸果 81。抽吸路徑83之上端部（吸入口 J兴處理空間23之搬入側 154223.doc -23· 201145381 之端部相連。抽吸路徑83之吸入口於x方向之開口寬度例 如為幾mm〜幾十mm左右，此處為1〇 mm左右。 於抽吸路徑83之吸入口附近配置有搬入口 26。搬入口 ％ 係藉由辅助板82之上端部與頂板21之搬入側之端部所形 成。搬入口 26與處理空間23之搬入側之端部相連，並且與 抽吸路徑83相連。 ~ 如圖6所示，搬出側（圖中為左侧）之輔助板^沿喷出噴 嘴40之搬出側之外面於y方向上延伸。如圖5及圓6所示， 於辅助板84與喷出喷嘴40之搬出側之外面之間形成有抽吸 路徑85。抽吸路徑85之下端部連接於抽吸泵“。抽吸路= 85之上端部（吸入口）與處理空間23之搬出側之端部相連。 抽吸路徑85之吸入口於乂方向之開口寬度例如為幾贿〜幾 十mm左右，此處為1〇 mm左右。 於抽吸路徑85之吸入口附近配置有搬出口 27。搬出口u 係藉由輔助板84之上端部與頂板21之搬出側之端部所形 成。搬出口27與處理空間23之搬出側之端部相連，並且與 抽吸路徑85相連》 向y之兩端部分別設置 85之寬度方向y之兩端 如圖6所示，於處理部2〇之寬度方 有端壁86。端壁86將抽吸路徑83、 部封閉。 於第3實施形態之大氣壓蝕刻裝置⑺中，對被處理基相 之第2面9b進行淺度蝕刻時，將電漿化之處理氣體自 出口 41噴出至處理^間23内。同時’驅動氣體抽吸系統; 之抽吸系81 ’自抽吸路徑83、85抽吸氣體。如圖7⑷ 154223.doc •24· 201145381 不’於處理空間23内未導入有被處理基板9之狀態下，處 理氣體gl於處理空間23内的喷出口41之正上方部分分流為 机向搬入側（圖中為右側）之氣流與流向搬出側（圖中為左 側）之氣流《流向搬入側之處理氣體自處理空間23之搬入 側之如被吸入至抽吸路徑83中。流向搬出側之處理氣體 自處理空間23之搬出側之端部被吸入至抽吸路徑85中。 進而，藉由氣體抽吸系統80之氣體抽吸，外部氣體進入 至搬入口 26中。該外部氣體自搬入口 26被吸入至抽吸路徑 83中。同樣地，外部氣體亦進入至搬出口 27中。該外部氣 體自搬出口 27被吸入至抽吸路徑85中。因此，外部氣體幾 乎不會流入至噴出噴嘴40之上表面與頂板21之間的處理空 間23 t。因此’處理空間23内之處理環境之氣體組成與電 漿化後之處理氣體本身之組成大致相同。即，處理空間2 3 内之HF分壓及水蒸氣分壓與處理氣體本身之hf分壓及水 蒸氣分壓大致相等。因此’即便外部氣體之濕度或溫度等 產生變動，處理空間23内之HF分壓及水蒸氣分壓亦幾乎不 變動。 如圖7(b)所示，當將被處理基板9之端部搬入至搬入口 26時，搬入口 26之開口面積變狹小，流通阻力增大，因此 自搬入口 26流入之外部氣體S2之流量降低或流速增大。該 流入外部氣體g2包含通過較被處理基板9之上側之外部氣 體g2a、與通過較第2面9b之下側之外部氣體g2b。其中， 下側之流入外部氣體S2b自搬入口 26立即被吸入至抽吸路 徑83中。因此，下側之流入外部氣體g2b幾乎不會進入至 154223.doc -25- 201145381 處理空間23中。 於被處理基板9之端部位於搬入口 2 6之狀態下，上側之 流入外部氣體g2a沿被處理基板9之端面繞至下方後被吸入 至抽吸路徑83中。因此，上側之流入外部氣體g2a亦幾乎 不會進入至處理空間23中。因此，將被處理基板9之端部 自搬入口 26搬入時，即便流入外部氣體§2之流量及流速產 生變動，亦可抑制或防止處理空間23内之氣體組成變動。 如圖7(c)所示，被處理基板9稍後覆蓋於抽吸路徑“上。 若形成為該狀態，則對於處理空間23内之較被處理基板9 位於上側的部分（以下稱為「第i處理空間部23a」），氣體 抽吸系統80之抽吸力發揮之作用微弱，外部氣體之吸 入流量減少。上側之外部氣體g2a可利用與被處理基板9之 上表面之黏性而流入至搬入口 26内，但其流入量與由抽吸 系統80抽吸時（圖7(a)〜(b))相比非常小。因此，頂板21與被 處理基板9之間之處理環境係維持為與處理氣體本身大致 相同之氣體組成。 來自於被處理基板9之下側之外部氣體g2b之流入量增大 與上側之外部氣體g2a減少之流入量相應的量。但即便流 量增大，流入外部氣體g2b亦幾乎全部立即被吸入至抽吸 路徑83中。因此，外部氣體g2b幾乎不會進入至處理空間 23内，被處理基板9與喷出喷嘴4〇之間的處理空間（以下稱 為「第2處理空間部23b」）之處理環境係維持為與處理氣 體本身大致相同之氣體組成。 如上所述之外部氣體流入之變動亦同樣地產生於將被處 J54223.doc -26- 201145381 理基板9自處理空間23中搬出之時。於該情料，自搬出 Λ入之外部氣體之流量及流速產生變動。&自於該搬 出口 25之流入外部氣體幾乎全部被吸入至抽吸路徑85中。 因此’於搬出之時，儘管流入外部氣體之流量或流速產生 灸動4理空間23内之氣體組成亦維持為大致固定之組 成。 如此，於蝕刻裝置18中，即便通過搬入口 26及搬出口27 而流入至處理空間23之外部氣體§2之流量或流速隨著被處 理基板9之搬入及搬出而產生變動，亦可將處理空間^内 之處理環境之氣體組成、進而姆麼及水蒸氣分壓分別維 持為與處理氣體本身Α致相同。其結果，可防止第2面9b 之钱刻處理變得不均句。又，可防止頂板21與被處理基板 9之間的處理j衣境之濕度上升，從而可防止於第^面％形成 凝結層。因此，可避免第1面9&亦受到蝕刻。即便相對於 處理氣體、進而處理空間23内之處理環境之濕度而言，外 部氣體之濕度非常高時，亦可確實地防止於第1面％形成 凝結層’從而可確實地避免第i面9a受到蝕刻。 再者，如後所述，於圖7(c)之狀態下，即便有外部氣體 g2a捲入至第1處理空間部23a之情形時，亦可藉由控制該 捲入量等而僅將第2面9b粗化。 本發明不限定於上述實施形態，可於不脫離其主旨之範 圍内進行各種改變。 例如’於上述實施形態中，第i面9a係應設置電子元件 之主面’應進行粗化（蝕刻）之第2面9b為背面，但亦可第i 154223.doc -27· 201145381 面9a為背面，應進行粗化（蝕刻）之第2面％為應設置電子元 件之主面。第1面與第2面兩者均可為設置電子元件之面。 被處理基板不限於玻璃，亦可為半導體晶圓等。進而，被 處理基板不限於形成電子元件之基板或半導體裝置用之基 板❶ 蝕刻對象之含矽物不限於Si〇2，亦可為SiN、Si、Sic、 SiOC 等。 亦可於被處理基板9上形成含有含矽物之膜，本發明裝 置1亦可為餘刻上述膜者。 被處理基板9之第1面9a及第2面9b之溫度調節機構亦可 為板式加熱器以外之電熱加熱器、熱媒加熱器、或輻射加 熱器。作為熱媒加熱器，例如頂板21亦可具有流通溫度經 調整之水等熱媒之熱媒流路、或積蓄上述熱媒之蓄積室。 =可對蓄積室中所積蓄之熱媒進行加熱等而進行溫度調 節。於第1實施形態中，可對整個頂板21進行溫度調節， 亦可對頂板2 1之-部分（例如中央部或—端部等）局部地進 行溫度調節。溫度調節機構（加熱器）可與頂板21分開而單 獨設置，由溫度調節機構（加熱器）對頂板21進行加熱後， 經由頂板21對被處理基板9之第丨面％進行加熱。 可冷卻被處理基板之第2面91)，藉此將第2面扑之溫度調 節為低於上述凝結點之所期望溫度。例如，可於底板取 置流通冷水等冷卻介質之介質料，冷卻底板22，藉此冷 卻被處理基板之第2面9b 〇於該情形時’第2面91)之上述冷 卻機構成為申請專利範圍之「調節機構」之要素。較佳為 154223.doc •28- 201145381 利用冷卻機構將第2面9b之溫度調節為較上述凝結點低 0〇C 〜10°c。 亦可調節裝置1周圍之濕度，進而調節處理環境中之水 蒸乳分壓。於該情料’ 14丨周圍之濕度調節機構成為 申請專利範圍之「調節機構」之要素。 可使處理氣體含有-定程度之水分。亦可使處理環境中 之水蒸氣分壓較大程度地依存於水添加部12之水添加量。 於該情形時，水添加部12成為申請專利範圍之「調節機 構」之要素。 電漿生成部60可設置於噴出喷嘴4〇之外部，亦可設置為 離開喷出喷嘴40。可利用電聚生成部6〇將原料氣體電装化 而生成處理氣體後，將該處理氣體輸送至噴出噴嘴。 處理氣體並不限於藉由電漿化而形成者。例如，亦可準 備儲存有作為處理氣體源之氟化氫水溶液之槽，使上述氟 化氫水溶液氣化後輸送至喷出喷嘴4〇。Pa' is more preferably 9·331χ104 ～1〇·397χ1〇4ρ&. [Effect of the Invention] According to the present invention, the second surface of the back side can be inspected while preventing or preventing the first surface of the substrate to be processed from being touched. [Embodiment] Hereinafter, embodiments of the present invention will be described based on the drawings. 1 and 2 show an i-th embodiment of the present invention. The substrate to be processed 9 is, for example, a glass substrate to be a semiconductor device such as a flat panel display. The glass substrate 9 contains a ruthenium containing Si 〇 2 as a main component. The thickness of the glass substrate 9 is, for example, 0. 5 mm~0. About 7 mm. The glass substrate 9 is formed in a square shape of a square shape, and has a first surface 9a (main surface) on the front side and a second surface 9b (back surface) on the back side. The first surface 9a is provided with a main surface of various electronic component layers such as an insulating layer, a conductive layer, and a semiconductor layer. The second surface 9b is a back surface of the object to be roughened (etched) by the atmospheric pressure etching apparatus i. After the second surface 9b is roughened, the surface treatment for forming the above various electronic element layers is performed on the first surface 9a. As shown in Fig. 1, the atmospheric pressure etching apparatus 1 includes a material gas supply mechanism 10, a processing unit 20, and a transport mechanism 30. The raw material gas supply mechanism 丨〇 contains 154223. Doc -10- 201145381 The fluorine-based raw material supply unit 11 and the water addition unit 12. The fluorine-based raw material supply unit 11 supplies a raw material gas which is a processing gas (money engraving agent) for buttoning. The material gas contains a fluorine-containing gas and a carrier gas. The fluorine-containing gas system uses CF4. As the fluorine-containing gas, other PFCs (perfluorocarbons) such as C2F6, C3F6, and C3f8, HFC (hydrofluorocarbon) such as CHF3, CH2F2, and CH3F, and PFCs such as SF6, NF3, and XA, and fluorine-containing compounds other than HFC may be used. Instead of CF4. In addition to the function of transporting the fluorine-containing gas, the carrier gas also functions as a diluent gas for diluting the gas-containing gas, and functions as a discharge gas for generating electric discharge electricity, which will be described later. The carrier gas is preferably an inert gas. Examples of the inert gas to be a carrier gas include rare gases such as helium, argon, helium, and helium, or nitrogen. Here, argon (Ar) is used as the carrier gas system. The flow ratio of the fluorine-containing gas to the carrier gas (CP#: αγ) is preferably 1 ··1000~1 : 10. The carrier gas can also be omitted. The water adding unit 12 adds water (h2〇) to the material gas (CF4+Ar) to humidify the material gas. By adjusting the amount of water added, the partial pressure of water vapor of the material gas can be adjusted, and the partial pressure of hydrogen fluoride and the partial pressure of water vapor of the process gas can be adjusted. The water adding portion 12 is composed of, for example, a humidifier including a groove such as a thermostatic chamber. Liquid water is accumulated in the tank. The raw material gas from the supply portion is supplied to the upper portion of the water surface of the above-mentioned tank, and is mixed with the saturated steam of the upper portion. Alternatively, water vapor may be added to the material gas by bubbling the raw material gas from the supply unit u in the water in the tank. The amount of water added can also be adjusted by adjusting the temperature of the above-mentioned tank to adjust the steam. Preferably, it satisfies the processing performance of the second surface 913 154223. Doc 201145381 adjusts the amount of water added to the water addition unit 12 and further the dew point of the treated gas. The dew point of the material gas before the addition of water is preferably _4 〇〇 c or less. Convert dew point -40 C to water vapor partial pressure to 0. Around 03 Torr, converted to volume, and the degree of agriculture is 0. About 004% The amount of water vapor in the raw material gas is almost a disaster. The amount of water in the raw material gas after the addition of water can be calculated based on the path of the raw material gas before the addition of water and the amount of gas in the water addition portion 12, and a Fourier transform infrared spectrometer (FTIR) can also be used. The amount of water in the material gas after the addition of water is measured. As shown in Fig. 1, the processing unit 20 includes a top plate 21, a bottom plate 22, a discharge nozzle 40, and a suction nozzle 50. The top plate 21 is formed in a horizontal plate shape. The width dimension of the top plate 21 in the direction orthogonal to the paper surface of Fig. 1 (hereinafter referred to as "y direction") is slightly larger than the width dimension of the substrate 9 to be processed in the y direction. The top plate 21 is composed of a plate heater and also serves as a temperature adjustment mechanism to be described later. The top plate 2 i, that is, the outer casing of the plate heater 21 is made of a metal such as aluminum. It is preferable to provide a resin film having high fluorine resistance and plasma resistance such as polytetrafluoroethylene on at least the lower surface of the surface of the top plate 21. The bottom plate 22 is formed in a horizontal plate shape, and is disposed below the top plate 21 in parallel with the top plate 21. The width dimension of the bottom plate 22 in the y direction (the horizontal direction in Fig. 2) is slightly larger than the width dimension of the substrate 9 to be processed in the y direction. The bottom plate 22 may be made of a metal such as aluminum or a resin or a glass plate. In the case where the bottom plate 22 is made of a metal, it is preferable to provide a resin film having high fluorine resistance and plasma resistance such as polytetraethylene or the like on at least the upper surface of the surface. The discharge nozzle 40 is disposed at one end of the processing unit 20 in the left-right direction (hereinafter referred to as "X direction" in Fig. 1 (the right side in the figure!). As shown in Figure 1 and Figure 2, I54223. Doc 12 201145381 The discharge nozzle 40 is formed in a container shape that extends long in the y direction. A discharge port 41 is provided at an upper end surface of the discharge nozzle 4''. The discharge port 41 is formed in a slit shape extending in the y direction, and the length of the slit θ41 is larger than the width dimension of the substrate to be processed 9 in the y direction. The discharge nozzle 40 is connected to one end of the bottom plate 22 in the weir direction (the right end portion in Fig. i). The upper end surface of the discharge nozzle 4G is flush with the upper surface of the bottom plate 22. The end portion (the right end portion in the figure!) of the top plate 21 protrudes from the end side of the bottom plate 22 (the right end side in the figure), and covers the upper side of the discharge nozzle 4''. A carry-in port % is formed between one end of the top plate 21 and the discharge nozzle 4A. The suction nozzle 50 is disposed at the other end of the processing unit 2 (the left end of the figure). The suction nozzle 50 is formed in a container shape that extends long in the y direction. A suction port 51 is formed in the upper end surface of the suction nozzle 50. The suction port 51 is formed in a slit shape extending in the y direction and the length of the inlet 51 in the y direction is slightly smaller than the width dimension of the substrate 9 to be processed in the y direction. The suction nozzle 50 is connected to the other end of the bottom plate 22 in the direction of the bottom plate (in the figure, the left end portion of the suction nozzle 50 has the same end surface as the upper surface of the bottom plate 22. The other end portion of the top plate 2i (in FIG. The left end portion protrudes toward the other end side and covers the upper side of the suction nozzle 50. A discharge port 27 is formed between the other end portion of the top plate 21 and the suction nozzle 50. At the processing port P 20 The processing unit inner space 29 is formed between the upper side top plate 2 i and the lower side constituent parts 22, 4〇, and %. One end of the processing unit inner space 29 in the parent direction (the right end portion in Fig. 1) is connected and moved in. The port 26 is connected to the other end of the processing unit 29 in the X direction (the left end in Fig. i), and the outlet 27 is formed. Both ends of the processing unit inner space 29 in the X direction are carried through the inlet 26, 154223. Doc -13- 201145381 2J is connected to the space outside the processing unit 2〇. As shown in Fig. 2, both ends of the inner door 29 of the processing portion in the y direction are closed by side walls. As shown in Fig. 1, the portion of the processing chamber inner space 29 from the position in the direction of the discharge port 41〇 to the position in the X direction of the suction port 51 constitutes the upper top plate 21 and the lower side portion of the processing space 23 processing unit 2〇. The % and the two side walls 24 constitute a processing space forming portion. The processing space 23 is connected to the moving population % via the processing unit inner space 29 which is located on the end side in the X direction. Further, the processing space 23 is connected to the transfer port 27 via the processing unit inner space 29 located on the other end side of the suction port 51 in the x-direction. The thickness of the processing space 23 is equal to the interval between the lower surface of the top plate 2i and the upper surface of the bottom plate 22, such as 〇 d 〇 = 5 mm 〜 1 〇 mm. A rectifying portion 42 is provided at a lower portion of the discharge nozzle 40. In the detailed illustration, the rectifying portion 42 includes a chamber or a slit extending in the y direction, or a plurality of small holes arranged in the y direction. The raw material gas (CF4+Ar+H2〇) after the addition of water is introduced into the rectifying unit 42 to be uniformized in the y direction. The plasma generating unit 6 is housed inside the discharge nozzle 40. The plasma generating unit 60 includes at least a pair of electrodes 61 and 61. The electrodes 61, 61 extend in the y direction, respectively. A solid dielectric layer (not shown) is provided on the opposite surface of at least one of the electrodes 61. One electrode 61 is connected to a power source (not shown) and the other electrode 61 is electrically grounded. An electropolymer discharge space 62 of substantially atmospheric pressure is formed between the pair of electrodes 61. The discharge space 62 is formed in a slit shape extending in the same direction as the electrode 61 in the seven-direction direction. In the discharge space 62, the above-mentioned raw material gas (CF4+Ar+H2〇) is plasma (including decomposition, excitation, activation, and radical Ι 54223. Doc -Μ 201145381 chemistry, ionization, etc.). By this, the raw material gas component is decomposed to generate a processing gas containing a fluorine-based reaction component such as hydrogenated hydrogen (HF) or COF 2 (COF2 in the fluorine-based reaction component such as Formula 1 can be further reacted with water to be converted into hydrogen fluoride (Formula 3). C0F2+H20-2HF+C〇2 (Formula 3) In the present embodiment, the water addition unit 12 is set such that almost all of h2o in the material gas participates in the formation reaction of Formula II (Formula 3 'Formula 3). Therefore, the H2〇 content in the process gas is substantially negligible to a degree that is substantially negligible or 0°/〇. The process gas contains undecomposed material gas components (CF4 in addition to the fluorine-based reaction component). Ar, HzO) » The process gas is ejected upward from the discharge port 41. The discharge flow of the process gas is uniform in the y direction. The exhaust mechanism such as a suction pump is connected to the suction nozzle 50 as shown. By driving the above-described exhaust mechanism ', the gas in the processing space 23 can be sucked into the suction port 51 of the suction nozzle 50 and the exhaust gas flow from the suction nozzle 5 is discharged to be larger than the supply of the processing gas from the discharge nozzle 40. Flow rate, equivalent to the above exhaust flow and supply The external air (air or the like) of the amount of the difference flows into the processing unit internal space 29 from the carry-in port 26 and the transfer port 27. The external air from the carry-in port 26 flows into the processing space 23 through the discharge port 41. The outside air from the outlet 27 is sucked by the suction port 51 and hardly reaches the processing space 23. Therefore, the processing environment in the processing space 23 becomes a mixed gas of the inflowing external gas and the processing gas from the above-described loading port 26. The following '/, unless otherwise specified, "inflow of external gas" means moving from above I54223. Doc •15· 201145381 The inlet 26 flows into the outside air in the processing space 23. The inflowing external gas usually contains moisture and the humidity is at least more than 〇%. In the present embodiment, the exhaust gas flow rate from the suction nozzle 50 is set to be sufficiently larger than the supply flow rate of the processing gas, and the flow rate of the inflowing external gas is sufficiently larger than the supply flow rate of the processing gas (for example, about 1 〇). The water content of the process gas is extremely small, and the partial pressure of water vapor in the treatment environment in the treatment space 23 is substantially equal to the partial pressure of water vapor of the external gas. The transport mechanism 30 includes a roller shaft 31 and a transport parent 32 that are disposed at a lower portion of the processing unit 20. The plurality of roller shafts 31 are arranged such that the axes are oriented in parallel in the width direction y and at intervals in the 乂 direction. In the axial direction y of each of the rod shafts 3 1 , a plurality of conveying rollers 32 are provided at intervals. The upper end portion of the conveying roller 32 passes through the roller holes 25 of the bottom plate 22 and protrudes upward from the upper surface of the bottom plate 22, facing the processing space. 23 inside. The amount of projection of the conveyance roller 32 from the upper surface of the bottom plate 22 corresponds to the distance between the second surface 9b of the substrate to be processed 9 and the discharge port 41 (working distance WD). The working distance WD is, for example, WD = 2 mm to 10 mm. The left side 0 transport mechanism 30 supports the substrate to be processed 9 horizontally in the direction of the arrow a toward the arrow a (left side in Fig. 1). Thereby, the substrate to be processed 9 is inserted into the processing space 23 from the inside of the processing space 23, passes through the inside of the processing space 23, and is carried out from the unloading port 27. The conveying speed of the substrate 9 to be processed of the conveying mechanism 30 is preferably 0. 1 m / min ~ 20 m / min or so. The transport mechanism 3 also serves as a support mechanism for supporting the substrate to be processed 9 and arranging it in the processing space 23. The first surface 9a of the processed substrate 9 faces upward, and the second surface 9b faces downward. Further, the atmospheric pressure etching apparatus 1 includes an adjustment mechanism. The above adjustment mechanism 154223. Doc -16- 201145381 Adjusting the first surface 9a of the substrate to be processed 9 by the relationship between the temperature of the first surface 9a and the second surface 9b of the substrate 9 to be processed and the condensation point of the mixed system of hydrogen fluoride and water in the processing space 23 And the temperature of the second surface 9b. In the present embodiment, the top plate 21 is constituted by a plate heater as described above, and is provided as a main element of the adjustment mechanism. The top plate, that is, the plate heater 21, is disposed on the opposite side of the discharge nozzle 40 with the position of the substrate to be processed 9 disposed in the processing space 23, and is disposed close to the above position. The distance d: between the lower surface of the heater, that is, the surface of the lower surface of the heater, and the first surface 9a of the substrate to be processed 9 disposed at the above position is preferably, for example, about d 丨 2 mm to 10 mm. The temperature of the heater 21 can be set in the range of from room temperature to, for example, about 50 °C. The set temperature of the heater 21 is set in accordance with the humidity of the outside air, the partial pressure of water vapor in the processing environment in the processing space 23, the partial pressure of hydrogen sulfide in the processing gas and the processing environment in the processing space 23, and the like. A method of shallowly etching the substrate to be processed 9 by the atmospheric pressure etching apparatus 1 configured as described above will be described. The water addition unit 12 adds a specific amount of water vapor (h2〇) to the raw material gas (CFi+Ar) from the fluorine-based raw material supply unit to obtain a humidified raw material gas. The humidification material gas (CF4+Ar+H2〇) is homogenized in the width direction y by the rectifying unit 42, and then plasma-formed by the plasma generating unit 6〇. Thereby, a processing gas containing hydrogen fluoride and at least hydrogen fluoride in water is produced. The partial pressure of hydrogen fluoride and the partial pressure of water vapor of the process gas can be adjusted by adjusting the amount of steam added to the water addition unit 12 or the like. Here, almost all of the moisture in the material gas is consumed to generate hydrogen fluoride, and the partial pressure of water vapor of the processing gas is substantially 〇. The temperature of the process gas is near room temperature. 154223. Doc •17· 201145381 This process gas is discharged from the discharge port 41 and supplied into the processing space 23. At the same time, the gas in the processing space 23 is sucked to the suction nozzle 5 to be discharged. The exhaust gas flow rate is set to be sufficiently larger than the processing gas supply flow rate. Therefore, the external gas which is sufficiently more than the processing gas is drawn into the processing space 23 to be mixed with the processing gas. Further, the partial pressure of water vapor in the processing environment in the processing space 23 (the mixed gas of the processing gas and the inflowing gas outside the helium gas) is substantially equal to the partial pressure of the water vapor of the outside air. The partial pressure of nitrogen in the treatment environment is equal to the hydrogen partial pressure of the treatment gas. The condensation point of hydrogen fluoride and water in the treatment environment is determined according to the partial pressure of hydrogen fluoride and the partial pressure of water vapor in the treatment environment. That is, the critical temperature of the condensation layer of hydrofluoric acid is generated (Fig.). The initial temperature of the substrate to be processed 9 is usually room temperature or about 15 to 35 °C. Here, the initial temperature of the substrate to be processed 9 means the temperature of the substrate 9 to be processed immediately before the substrate to be processed 9 is loaded into the processing unit 23. Usually, the entire substrate to be processed 9 is the initial dish size immediately before the above-described loading. Therefore, the first surface 9a and the second surface 9b are the initial temperature, and the substrate to be processed 9 is inserted into the processing space 23 from the inlet 26, and is directed from one end side of the processing space 23 in the direction of the arrow a of FIG. The middle side of 1 is the right end side) and is conveyed to the other end side (the left end side in Fig. 1). In this manner, the substrate to be processed 9 covers the upper side of the discharge nozzle 40, and the processing gas discharged from the discharge port 41 comes into contact with at least the second surface 9b of the substrate to be processed 9. Further, one portion of the local gas diffused into the processing space 23 is in contact with the first surface 9a of the substrate 9 to be processed. As described above, both the discharge temperature of the processing gas and the initial temperature of the substrate to be processed 9 are near room temperature, and the temperature difference therebetween is small. Therefore, the temperature of the substrate to be processed 9 hardly changes due to the blowing of the process gas. 154223. Doc 18.  201145381 Before the substrate 9 to be processed is carried in, the heater, which is the top plate, is heated to the set temperature in advance and held at the set temperature. The set temperature of the heater 21 is set to be higher than the condensation point of hydrogen fluoride and water in the treatment environment, preferably slightly above the condensation point. For example, the set temperature of the heater 21 is adjusted to be higher than the condensing point by about 6 to about 6 (rc). The heat of the heater 21 is transmitted to the broken substrate 9 introduced into the processing space in a non-contact manner. The first surface 9a can thereby heat the first surface % to a desired temperature. The desired temperature is higher than the condensation point and is substantially equal to the set temperature or lower than the set temperature, for example, higher than the condensation point. £>c or more to 40 t. By reducing the distance di between the heater 21 and the substrate to be processed 9, the first surface 9a can be surely heated (temperature-adjusted). The third substrate to be processed is heated. When the surface is "as far as possible, it is preferable to maintain the /JBL degree outside the second surface below the condensation point (for example, lower than the condensation point 〇a.~1 〇), and it is preferable to maintain the initial temperature as described above. The heat of the heater 21 is hardly transmitted to the second surface 9b of the substrate to be processed 9. As described above, by reducing the difference between the condensation point and the initial temperature of the substrate to be processed 9, the substrate 9 to be processed is slightly heated. The first side knows that it can reach higher than the above condensation. The set temperature of the node can reduce the amount of heat that the heater 21 applies to the first surface 9a of the substrate to be processed 9. Thereby, heat can be suppressed or prevented from being transmitted to the second surface 9b of the substrate to be processed 9. The transfer mechanism can also be adjusted. The transport speed of 30 is to carry out the processing of the substrate 9 from the processing space 23 and the transfer port before the heat reaches the second surface 9b. In this case, the transport mechanism 3 becomes the "adjustment mechanism" of the patent application scope. The setting temperature of the above heater 21 is considering the conveying speed 154223. Doc •19· 201145381 and set. When the conveying speed is relatively fast, the set temperature of the heater 21 is sufficiently higher than the desired temperature of the first surface 9a. Thereby, the time required for the first surface 9a to reach the desired temperature can be shortened. On the other hand, by the high-speed conveyance, the substrate to be processed 9 can be carried out from the outlet 27 by the temperature before the temperature of the second surface 9b is higher than the condensation point. On the other hand, when the transport speed is relatively small, the set temperature of the heater 21 can be made substantially the same as the desired temperature of the first surface 9a. By this, it is possible to prevent the temperature of the substrate to be processed 9 from being higher than the above-mentioned desired temperature. On the other hand, the heating time is prolonged in the case of low-speed conveyance, but by setting the set temperature slightly higher than the above-described condensation point, the temperature of the second surface 9b can be maintained below the condensation point. For example, when the temperature of the processing gas is room temperature and the desired temperature of the first surface 9a is 4 〇 ° C to 50 ° C, the conveying speed is about 5 mm / sec to 10 mm / sec. When transporting, set the heater 21 to a lower temperature! The desired temperature of the face 9a is high. 〇~2〇 It is left and right. In contrast to the low-speed conveyance in which the conveyance speed is 1 min/secA or less, the set temperature of the heater 21 is substantially the same as the desired temperature of the first surface %. Since the temperature of the second surface 9b is below the condensation point, when the hydrogen fluoride vapor and the water vapor in the treatment environment contact the second surface 913, they condense to form a condensation layer of hydrofluoric acid. As a result, an etch reaction is formed in the ruthenium containing the second surface 9b2Si〇2, and the second surface 9b can be lightly roughened. On the other hand, since the temperature of the first surface 9a of the substrate to be processed 9 is higher than the above-mentioned condensation point, the hydrogen fluoride vapor and the water vapor in the treatment environment are not condensed even if they contact the first surface%. Therefore, formation of a coagulation layer on the first surface 9a can be prevented. As a result, it is possible to prevent the first surface 9a from being etched, so that the first surface can be prevented from being "table 154223. Doc •20· 201145381 The surface condition remains good. After the roughening treatment by the atmospheric pressure etching apparatus ,, the substrate to be processed 9 is transferred to another surface treatment apparatus (not shown). The substrate to be processed 9 is placed on a table of the surface treatment apparatus, and the second surface 9b is brought into contact with and adhered to the stage. Since the degree of roughening of the second surface 913 is small, the substrate to be processed 9 can be surely adsorbed and held on the stage. Next, the first surface % is subjected to surface treatment such as washing, surface modification, etching, ashing, or film formation. Since the first surface 9a is prevented from being roughened in the roughening treatment, good surface treatment can be performed. Further, various electronic component layers such as an insulating layer, a conductive layer, and a semiconductor layer formed by the above surface treatment can have excellent quality. After the surface treatment of the first surface 9a, the substrate to be processed 9 is carried out from the stage. Since the fine unevenness is formed by the roughening treatment on the second surface 9b, the substrate to be processed 9 can be easily separated from the stage. As a result, the substrate to be processed 9 can be prevented from being bent or broken. Next, other embodiments of the present invention will be described. In the following embodiments, the same reference numerals are given to the same parts as those in the above-described embodiments, and the description thereof will be omitted as appropriate. As shown in FIG. 3 and FIG. 4, in the atmospheric pressure etching apparatus u of the second embodiment, the transport mechanism 30 of the substrate to be processed 9 includes a transport roller conveyor 33, a processing roller conveyor 34, and a carry-out roller. Conveyor 35. Each of the rotary conveyors 33, 34, and 35 has a plurality of roller shafts 31 arranged in the X direction (the horizontal direction in Fig. 3), and a conveying roller 32 provided on each of the roller shafts 31. The loading roller conveyor 33 is disposed on the one end side (the right end side in Fig. 3) of the processing unit 2 in the X direction, and carries the substrate to be processed 9 into the processing space 23. Processing transfer 154223. Doc • 21· 201145381 The conveyor 34 is disposed below the bottom plate 22 and conveys the substrate 9 to be processed in the processing space 23. The unloading roller conveyor 35 is disposed on the other end side (the left end side in Fig. 3) of the processing unit 2 in the X direction, and carries the substrate to be processed 9 out of the processing space 23. At the lower portion of the bottom plate 22, a plurality of shields 70 for processing the roller conveyor 34 are provided. The shield 70 corresponds to the roller shaft 3 j of the processing roller conveyor 34. The shield 70 is formed in a valley shape extending in the axial direction y of the roller shaft 31. Each of the shields 7 is accommodated with a corresponding roller shaft 31 and a conveying roller 32. The upper surface of the shield 70 is open and touches the lower surface of the bottom plate 22. The shield 70 may be made of a metal such as aluminum or a resin such as vinyl. A resin film having high fluorine resistance and plasma resistance such as polytetrafluoroethylene may be provided on the inner surface of the protective cover 70. As shown in Fig. 4, the roller shaft 31 of the processing roller conveyor 34 penetrates the protective cover 7〇. End walls 74 on both sides in the length direction. An airtight bearing 75 is provided on the end wall 74. The hermetic bearing 75 rotatably supports the roller shaft 31. Further, the hermetic bearing 75 hermetically seals between the roller shaft 31 and the end wall 74. The structural member of the hermetic bearing is preferably composed of a resin having high fluorine resistance and plasma resistance such as polytetrafluoroethylene. The inside of the side shield 70 communicates only with the processing space 23 via the perforation 25 . According to the second embodiment, it is possible to prevent the outside air (air or the like) below the atmospheric pressure etching device from being introduced into the processing space 23 through the roller holes 25. Further, when the processing gas of the processing space 23 passes through the Wei hole 25 toward the lower side of the bottom plate 22; when the gas is leaked, the processing gas can be sealed inside the protective cover 7?. Therefore, it is possible to prevent the process gas from leaking to the outside. 154223. Doc -22· 201145381 The suction nozzle 50 of the second embodiment is disposed at the intermediate portion of the bottom plate 22 in the x direction. The top plate 21 and the bottom plate 22 protrude from the other end side (the left end side in FIG. 3) of the suction nozzle 50 in the X direction, that is, the downstream side in the conveying direction of the substrate 9. Only the portion between the corresponding discharge nozzle 40 and the suction nozzle 50 in the top plate 21 may be maintained at a set temperature as an adjustment mechanism, or the entire top plate 21 may be maintained at a set temperature as an adjustment mechanism. Fig. 5 and Fig. 6 show a third embodiment of the present invention. The atmospheric pressure etching apparatus 1B of this embodiment does not have the bottom plate 22. The processing space 23 is formed by ejecting the entire upper surface of the nozzle 4 and the lower surface of the top plate 21. There is a processing environment containing HF vapor and water vapor in the processing space 23. By adjusting the length of the ejection nozzle 4's X direction, the length of the processing space 23 can be adjusted, thereby increasing or decreasing the processing time of the substrate to be processed 9 in contact with the processing environment. As a result, the etching amount of the second surface 9b can be adjusted to a desired amount. As shown in Fig. 5, the atmospheric pressure (four) device 1B includes a gas suction system 8A. The gas suction system 80 includes a suction pump 81 and a pair of auxiliary plates 82 and materials. The pair of auxiliary plates 82, 84 are vertically disposed on both sides in the X direction while sandwiching the discharge nozzles 4 (). The upper ends of the auxiliary plates 82, 84 are aligned in the same plane as the upper surface of the discharge nozzle 4q. The thickness ❹ of the auxiliary plates 82 and 84 is about _~ ten or more mm, and here is about 5 mm. As shown in Fig. 6, the outer surface of the loading/unloading nozzle 40 on the loading side (the right side) extends in the y direction orthogonal to the x direction. As shown in Figs. 5 and 6, a suction path 83 is formed between the auxiliary plate 82 and the outer surface of the take-out side of the discharge nozzle 4A. The suction path is connected to the suction fruit 81 at the lower end of the τ θ π _. The upper end of the suction path 83 (the suction side J moving the processing space 23 of the moving side 154223. The ends of doc -23· 201145381 are connected. The opening width of the suction port of the suction path 83 in the x direction is, for example, about several mm to several tens of mm, and here is about 1 mm. A carry-in port 26 is disposed in the vicinity of the suction port of the suction path 83. The carry-in port % is formed by the end portion of the upper end portion of the auxiliary plate 82 and the loading side of the top plate 21. The carry-in port 26 is connected to the end of the loading side of the processing space 23, and is connected to the suction path 83. As shown in Fig. 6, the auxiliary plate on the carry-out side (the left side in the drawing) extends in the y direction along the outer surface of the discharge nozzle 40. As shown in Fig. 5 and the circle 6, a suction path 85 is formed between the auxiliary plate 84 and the outer surface of the discharge nozzle 40 on the carry-out side. The lower end of the suction path 85 is connected to the suction pump ". The upper end (suction port) of the suction path = 85 is connected to the end of the unloading side of the processing space 23. The opening of the suction path 85 is open in the x direction The width is, for example, a few bribes to several tens of mm, and is about 1 mm. The outlet 27 is disposed in the vicinity of the suction port of the suction path 85. The outlet u is supported by the upper end portion of the auxiliary plate 84 and the top plate 21 The end portion of the carry-out side is formed. The carry-out port 27 is connected to the end portion of the processing space 23 on the carry-out side, and is connected to the suction path 85. The ends of the width direction y of the y are respectively provided at the ends of y. As shown in the processing unit 2, the end wall 86 has an end wall 86. The end wall 86 closes the suction path 83 and the portion. In the atmospheric pressure etching device (7) of the third embodiment, the second surface 9b of the processed base phase When the shallow etching is performed, the plasma-treated process gas is ejected from the outlet 41 into the processing chamber 23. At the same time, the pumping system 81' drives the gas suction system 81' to draw gas from the suction paths 83, 85. Figure 7 (4) 154223. Doc •24· 201145381 In the state in which the substrate to be processed 9 is not introduced into the processing space 23, the processing gas gl is shunted to the upper side of the discharge port 41 in the processing space 23 as the machine-side loading side (right side in the figure) The airflow to the carry-out side (the left side in the drawing) of the airflow is sent to the suction path 83 as it flows from the loading side of the processing space 23 to the loading side. The process gas flowing to the carry-out side is sucked into the suction path 85 from the end portion of the carry-out side of the processing space 23. Further, the outside air enters the carry-in port 26 by the gas suction of the gas suction system 80. This outside air is sucked into the suction path 83 from the carry-in port 26. Similarly, the outside air also enters the outlet 27. This external gas is sucked into the suction path 85 from the outlet 27. Therefore, the outside air hardly flows into the processing space 23 t between the upper surface of the ejection nozzle 40 and the top plate 21. Therefore, the composition of the gas in the processing environment in the processing space 23 is substantially the same as the composition of the processing gas itself after the plasma. That is, the HF partial pressure and the water vapor partial pressure in the treatment space 23 are substantially equal to the hf partial pressure and the water vapor partial pressure of the process gas itself. Therefore, even if the humidity, temperature, and the like of the outside air fluctuate, the HF partial pressure and the water vapor partial pressure in the processing space 23 hardly change. As shown in FIG. 7(b), when the end portion of the substrate to be processed 9 is carried into the carry-in port 26, the opening area of the carry-in port 26 is narrowed, and the flow resistance is increased. Therefore, the external gas S2 flowing in from the carry-in port 26 is The flow rate is reduced or the flow rate is increased. The inflowing external gas g2 includes an external gas g2a that passes through the upper side of the substrate 9 to be processed and an external gas g2b that passes through the lower side of the second surface 9b. Among them, the inflow external air S2b on the lower side is immediately sucked into the suction path 83 from the inlet 26 . Therefore, the inflowing external gas g2b on the lower side hardly enters to 154223. Doc -25- 201145381 Processing space 23. In the state where the end portion of the substrate to be processed 9 is located at the carry-in port 26, the upper inflowing outside air g2a is wound down to the lower end surface of the substrate to be processed 9 and then sucked into the suction path 83. Therefore, the inflow external gas g2a on the upper side hardly enters into the processing space 23. Therefore, when the end portion of the substrate to be processed 9 is carried in from the carry-in port 26, even if the flow rate and flow rate of the inflowing external gas § 2 are changed, the gas composition in the processing space 23 can be suppressed or prevented from fluctuating. As shown in Fig. 7(c), the substrate to be processed 9 is later covered on the suction path. If this state is formed, the portion of the processing space 23 on the upper side than the substrate to be processed 9 (hereinafter referred to as " In the i-th processing space portion 23a"), the suction force of the gas suction system 80 is weak, and the suction flow rate of the external air is reduced. The upper external air g2a can flow into the carry-in port 26 by the adhesiveness with the upper surface of the substrate to be processed 9, but the inflow amount is sucked by the suction system 80 (Fig. 7 (a) to (b)). Very small compared to. Therefore, the processing environment between the top plate 21 and the substrate to be processed 9 is maintained to be substantially the same gas composition as the processing gas itself. The amount of inflow of the outside air g2b from the lower side of the substrate to be processed 9 is increased by an amount corresponding to the amount of inflow of the upper side external gas g2a. However, even if the flow rate is increased, almost all of the inflowing external gas g2b is sucked into the suction path 83 immediately. Therefore, the outside air g2b hardly enters into the processing space 23, and the processing environment of the processing space between the substrate to be processed 9 and the discharge nozzle 4 (hereinafter referred to as "the second processing space portion 23b") is maintained. The process gas consists essentially of the same gas. The fluctuation of the external gas inflow as described above is also generated in the same place as J54223. Doc -26- 201145381 When the substrate 9 is removed from the processing space 23 In this case, the flow rate and flow rate of the external gas that has been moved out are changed. & almost all of the inflowing external gas from the outlet 25 is sucked into the suction path 85. Therefore, at the time of carrying out, the composition of the gas in the moxibustion space 23 is maintained to be substantially constant despite the flow rate or flow rate of the inflowing external gas. In the etching apparatus 18, even if the flow rate or flow rate of the external gas §2 flowing into the processing space 23 through the inlet 26 and the outlet 27 is changed as the substrate 9 is loaded and unloaded, the processing can be performed. The gas composition, and then the partial pressure of water vapor in the treatment environment in the space are maintained to be the same as those of the process gas itself. As a result, it is possible to prevent the money engraving processing of the second surface 9b from becoming uneven. Further, it is possible to prevent the humidity of the treatment environment between the top plate 21 and the substrate to be processed 9 from rising, thereby preventing the formation of the condensation layer on the second surface. Therefore, it is possible to prevent the first surface 9& Even when the humidity of the outside air is extremely high with respect to the processing gas and the humidity of the processing environment in the processing space 23, it is possible to reliably prevent the formation of the condensed layer in the first surface %, thereby reliably avoiding the i-th surface 9a. Etched. Further, as will be described later, in the state of FIG. 7(c), even when the outside air g2a is caught in the first processing space portion 23a, only the first amount can be controlled by controlling the amount of the winding or the like. 2 faces 9b are roughened. The present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit and scope of the invention. For example, in the above embodiment, the i-th surface 9a is provided with the second surface 9b on which the main surface of the electronic component should be roughened (etched) as the back surface, but it may be ith 154223. Doc -27· 201145381 The surface 9a is the back surface, and the second surface % to be roughened (etched) is the main surface on which the electronic component should be placed. Both the first surface and the second surface may be surfaces on which electronic components are provided. The substrate to be processed is not limited to glass, and may be a semiconductor wafer or the like. Further, the substrate to be processed is not limited to the substrate on which the electronic component is formed or the substrate for the semiconductor device. The object to be etched is not limited to Si〇2, and may be SiN, Si, Sic, SiOC or the like. A film containing a ruthenium-containing material may be formed on the substrate 9 to be processed, and the device 1 of the present invention may also be a film for the film. The temperature adjustment mechanism of the first surface 9a and the second surface 9b of the substrate 9 to be processed may be an electrothermal heater, a heat medium heater, or a radiant heater other than the plate heater. As the heat medium heater, for example, the top plate 21 may have a heat medium flow path through which a heat medium such as water having a temperature is adjusted, or an accumulation chamber in which the heat medium is stored. = The temperature can be adjusted by heating the heat medium accumulated in the accumulating chamber. In the first embodiment, the temperature of the entire top plate 21 can be adjusted, and the temperature of the portion of the top plate 21 (e.g., the center portion or the end portion) can be locally adjusted. The temperature adjustment mechanism (heater) can be separately provided separately from the top plate 21, and after heating the top plate 21 by the temperature adjustment mechanism (heater), the second surface % of the substrate to be processed 9 is heated via the top plate 21. The second surface 91) of the substrate to be processed can be cooled, whereby the temperature of the second surface is adjusted to a temperature lower than a desired temperature of the condensation point. For example, the cooling mechanism in which the cooling medium such as cold water is supplied to the bottom plate and the bottom plate 22 is cooled, thereby cooling the second surface 9b of the substrate to be processed, and the 'second surface 91' in this case becomes the patent application scope. The element of the "regulatory body". Preferably it is 154223. Doc •28- 201145381 The temperature of the second surface 9b is adjusted to be 0〇C to 10°c lower than the above condensation point by the cooling mechanism. The humidity around the device 1 can also be adjusted to adjust the water vapor partial pressure in the treatment environment. The humidity control mechanism around the situation has become an element of the "regulatory body" of the patent application. The process gas can be provided with a certain degree of moisture. The water vapor partial pressure in the treatment environment can also be largely dependent on the water addition amount of the water addition portion 12. In this case, the water adding unit 12 is an element of the "adjustment mechanism" of the patent application. The plasma generating unit 60 may be disposed outside the discharge nozzle 4A or may be disposed to be separated from the discharge nozzle 40. The raw material gas can be electrically charged by the electropolymerization unit 6 to generate a processing gas, and then the processing gas can be sent to the discharge nozzle. The process gas is not limited to being formed by plasma formation. For example, a tank in which an aqueous hydrogen fluoride solution as a source of a processing gas is stored may be prepared, and the aqueous hydrogen fluoride solution may be vaporized and then sent to a discharge nozzle 4〇.

處理氣體亦可包含臭氧等氧化成分。臭氧可利用臭氧發 生器或氧電漿生成裝置而生成。 ' X 被處理基板9之狀態並不限於水平，亦可為鉛垂，亦可 相對於水平或鉛垂傾斜。 亦可使被處理基板9之第 不叫别下。可將溫 度調節機構（加熱器）配置於被處理基板9之下側，將喷出喷 嘴4〇配置於被處理基板9之上側，將處理翁髀 处卫札體自被處理基 板9之上方吹附至被處理基板9。 被處理基板9不限於沿X方向之箭頭&之;Jfc A gg 相肉卓程移動， 154223.doc -29- 201145381 亦可於處理空間23内往返移動。 <亦可將支持被處理基板9之支持機構與搬送機構3〇分開 °又置。亦可利用支持機構固定被處理基板9之位置，利用 搬送機構移動處理部2G。並不限於—面使被處理基板9與 處理部20彼此相對移動一面進行钱刻處理，亦可於被處理 基板9與處理部2〇之相對位置固定之狀態下進行蝕刻广 理。 < [實施例1] 對貫施例進行說明。本發明當然不限定於以下之實施 例〇 於實施例1中，使用與圖丨及圖2實質上相同之大氣壓蝕 刻裝置1。 使用玻璃基板作為被處理基板9，分別於第i面9a及第2 面9b被覆SiN(含梦物）之膜。 被處理基板9之尺寸如下所示。 沿X方向之長度：670 mm y方向之寬度：550 mm 厚度：0.7 mm 大氣壓姓刻裝置1之尺寸構成如下所示。 底板22之沿X方向之長度：〇3 m 處理空間23之上下方向之厚度：d〇=8 mm 處理空間23之y方向之寬度：600 mm 工作距離：WD=4 mm 頂板即板式加熱器21之下表面與被處理基板9之上表面 154223.doc -30· 201145381 的距離：d丨=4 mm 原料氣體之組成如下所示。The processing gas may also contain an oxidizing component such as ozone. Ozone can be produced by using an ozone generator or an oxygen plasma generator. The state of the X substrate to be processed 9 is not limited to a horizontal level, and may be vertical or may be inclined with respect to a horizontal or vertical direction. It is also possible to make the substrate 9 to be processed not to be called. The temperature adjustment mechanism (heater) can be disposed on the lower side of the substrate to be processed 9, and the discharge nozzle 4 can be disposed on the upper side of the substrate to be processed 9, and the processing body can be blown from above the substrate 9 to be processed. Attached to the substrate 9 to be processed. The substrate to be processed 9 is not limited to the arrow & in the X direction; the Jfc A gg phase is moved, and 154223.doc -29- 201145381 can also move back and forth within the processing space 23. <The support mechanism for supporting the substrate to be processed 9 may be separated from the transport mechanism 3'. The position of the substrate to be processed 9 can be fixed by the support mechanism, and the processing unit 2G can be moved by the transport mechanism. The surface of the substrate to be processed 9 and the processing portion 20 are not limited to each other, and the etching process is performed while the relative position of the substrate to be processed 9 and the processing portion 2 is fixed. <Example 1] A description will be given of a specific example. The present invention is of course not limited to the following embodiments. In the first embodiment, the atmospheric pressure etching apparatus 1 substantially the same as that of Fig. 2 and Fig. 2 is used. A glass substrate is used as the substrate to be processed 9, and a film of SiN (including a dream) is coated on the i-th surface 9a and the second surface 9b, respectively. The dimensions of the substrate 9 to be processed are as follows. Length in the X direction: 670 mm y direction width: 550 mm Thickness: 0.7 mm The atmospheric size of the device 1 is shown below. Length of the bottom plate 22 in the X direction: 〇3 m Thickness in the lower direction of the processing space 23: d 〇 = 8 mm Width in the y direction of the processing space 23: 600 mm Working distance: WD = 4 mm The top plate is the plate heater 21 The distance between the lower surface and the upper surface of the substrate 9 to be processed 154223.doc -30· 201145381: d丨=4 mm The composition of the material gas is as follows.

Ar . 8.7 slm CF4 : 0.3 slm H2O · 0.19 seem 利用整流部42將上述原料氣體電漿化而生成處理氣體。 因此’處理氣體之流量稍多於9 seem。 電漿生成條件如下所示。 電極間間隔：1 mmAr. 8.7 slm CF4 : 0.3 slm H2O · 0.19 seem The raw material gas is plasma-formed by the rectifying unit 42 to generate a processing gas. Therefore, the flow rate of the process gas is slightly more than 9 seem. The plasma generation conditions are as follows. Interelectrode spacing: 1 mm

電極間電壓：Vpp= 12.8 kV 電極間電壓之頻率：25 kHz(脈衝波） 供給電力：脈衝轉換前之直流電壓=370 V、電流=9.4 A 自吸入口 51之排氣量係設為500 slm。藉此，自搬入口 26導入至處理空間23中之外部氣體約為120 slm。 處理氣體、進而處理空間23内之處理環境之氟化氫分壓 為 6.2 Torr 。 裝置周圍為大氣壓’裝置周圍之溫度（室溫）為25。(：，相 對濕度約為3 0%。如圖11所示，與該相對濕度對應之水蒸 氣分壓為7.1 Torr。又，該處理環境中之氟化氫及水之凝. 結點約為27°C。 被處理基板9搬入至處理空間23前之初期溫度為25°C。 沿X方向之箭頭a之指向搬送被處理基板9使其通過處理 空間23。被處理基板9通過處理空間23之次數（掃描次數）為 1次》 154223.doc •31- 201145381 被處理基板9之搬送速度係設為4 m/min。 自喷出喷嘴40噴出處理氣體係自將被處理基板9搬入至 處理空間23之前開始’且持續進行至將被處理基板9搬出 處理空間23為止。 將頂板即板式加熱器2 1保持為設定溫度，進而調節第j 面9a之溫度。加熱器21之設定溫度係25°C、30°C、35。(：、 45°C四個溫度。 於25°C下，於頂板21之下表面形成結露。於3(rc、 35°C、45°C下’於頂板21之下表面未形成結露，再者，若 自25°C開始加熱頂板21，則加熱至27°C〜28〇c時結露消 失。 對處理後之被處理基板9，測定第1面9a上之SiN膜及第2 面9b上之SiN膜之蝕刻速率。測定位置係設為被處理基板9 之各面9a、9b之X方向之中央部的在寬度方向y上隔開1爪爪 間隔之部位。對於每個測定位置，用蝕刻深度除以掃描次 數’從而求出每一次掃描（單程搬送1次）之蝕刻量 (nm/sCan)。進而，求出各面9a、9b之上述各測定位置之蝕 刻速率的平均值。 圖8係表示上述平均蝕刻速率者。如圖8所示，於加熱器 设疋溫度為25°C時，不僅第2面处之siN膜受到蝕刻，第i 面9a之SiN膜亦受到與第2面处側相同程度 之蝕刻。 >於加熱器設定溫度為3(rc時，可確認：第2面9b2SiN膜 獲得充分之触刻量’相對於此，第i面9&之隨膜之触刻量 變得極小，SiN膜幾乎未受到蝕刻。 154223.doc -32· 201145381 加熱器設定溫度為35°C及45°C之時亦與30t之時相同， 第2面9b之SiN膜獲得充分之蝕刻量，相對於此，第1面9a 之SiN膜幾乎未受到蝕刻。 由以上之結果可確認：藉由使第1面9a之溫度高於處理 環境中之氟化氫及水之凝結點，且使第2面9b之溫度低於 上述凝結點’可一面抑制或防止第1面％受到蝕刻，一面 蝕刻第2面9b。 圖9及圖1 〇係各面9a、9b之上述各測定位置之蝕刻速 率’表示寬度方向y上之蝕刻速率之分佈。如圖9(a)所示， 當加熱器設定溫度為25。(：時，第1面9a '第2面9b之蝕刻速 率均根據寬度方向y之位置而產生較大之不均勻。造成不 均勻之因素亦可考慮搬送輥33之影響。搬送輥33之配置位 置為圖9及圖1〇之橫轴上之·35 mm、0 mm、35 mm之各位 置。 相對於此’如圖9(b)所示，當加熱器設定溫度為3〇它 時’第1面9a、第2面9b之蝕刻速率均大致均勻。 如圖10(a)及圖10(b)所示，加熱器設定溫度為35°C及 45 C之時亦與30。(：之時相同’第1面9a、第2面9b之蝕刻速 率均大致均勻。 由以上之結果可明白：藉由使第i面93之溫度高於處理 環境中之氟化氫及水之凝結點，不僅可抑制第1面9a之姓 刻’亦可提高第1面9a及第2面9b之蝕刻均勻性。 進而’如圖11所示，基於HF水溶液之氣液平衡曲線，計 算出HF-KhO體系根據溫度而改變之凝結條件並製成圖。 154223.doc •33· 201145381 於S亥圖中，水平之虛線係表示相對濕度（％ RH)，對應處理 環境之H2〇分壓。於該圖中，與實施例1之處理環境之h2〇 分壓（7.1 Toit(相對濕度30%))&HF分壓（6 2 T〇rr)對應之點 A相對於25°C之氣液平衡曲線而言位於氣相側，相對於 3 0 C以上之氣液平衡曲線而言位於液相側。因此，可確認 實施例1之結果與理論上之計算資料相符合。因此，設定 處理條件時，使用圖丨丨所例示之圖，以處理環境之hf分壓 及仏〇分壓所對應的上述圖上之點相較於室溫或被處理基 板9之初期溫度所對應之氣液平衡曲線而言位於氣相側， 且相較於加熱器設定溫度所對應之氣液平衡曲線而言位於 液相側的方式，來設定上述加熱器設定溫度或處理氣體參 數（原料氣體成分之流量、水蒸氣之添加量等）即可。 圖12係第3實施形態（圖5〜圖7)之触刻裝置iB中之HF_H2〇 體系之凝結條件的圖。於银刻裝置〗B中，因外部氣體幾乎 未進入至處理空間23内，故而處理環境之氣體組成與電漿 化後之處理氣體之氣體組成大致相同。加濕後之氟系原料 氣體即電漿化前之處理氣體（CF4+Ar+H2〇)之h2〇分壓例如 為10.8 Ton·(圖12之一點鏈線L1)。該處理氣體中之水藉由 電漿化而分解。因此，電漿化後之處理氣體之Η"分壓與 電漿化前相比下降，例如變成H T〇rr(圖12之虛線L2)〇進 而，電漿化後之處理氣體之HF分壓例如為4.2 Torr(圖12之 虛線L3)。虛線L2與虛線L3之交點B表示電漿化後之處理 氣體之HF及HsO分壓，進而表示處理空間23内之處理環境 之HF及ΗζΟ分壓。因此，被處理基板9之第2面外之溫度只 154223.doc •34· 201145381 要為點B之溫度以下例如251左右，即於第2面9b上形成氫 氟酸之凝結層，藉此可確實地蝕刻第2面9b。並且，只要 藉由加熱器21將被處理基板9之第1面9a之溫度加熱為高於 點B之溫度例如30。(：左右，即可避免於第1面9a形成凝結 層，從而可確實地防止第1面9a受到蝕刻。 再者’即便不藉由加熱器21將被處理基板9之第1面9a之 溫度加熱為高於點B之溫度，亦可防止第1面9a受到蝕刻。 以處理環境之氣體組成如上述圖12之點B所示，且處理環 玉兄之遥度為2 5 C之情形為例進行說明。 於圖5所示之第3實施形態中，擴大加熱器21之下表面與 被處理基板9之第1面9a之距離。處理空間23之環境為點Β 所示之條件’藉由被處理基板9自搬入口％進入至處理空 間23 ’外部氣體捲入。然而，藉由喷出之處理氣體、以及 由搬入側之抽吸路徑83之於處理空間前進行之排氣，外部 氣體未進入至第2面9b與喷出喷嘴40之上表面之間的第2處 理空間部23b。另一方面，外部氣體進入至第i面9a與加熱 益21之間的第1處理空間部μ a。如此，則第1處理空間部 23a之HF分壓下降，處理環境之分壓組成自點8變化為跨 過25°C之氣液平衡曲線的氣相侧。因此，不會於第1面9& 形成凝結層，第1面9a不會受到姓刻。 如此，藉由適當地調整加熱器21之下表面與被處理基板 9之第1面9a之距離，控制由被處理基板9引起的外部氣體 向第1處理空間部23a中之捲入量，可使得即便不利用加熱 益21進行加熱亦可僅對第2面9b進行粗化。此時，外部氣 154223.doc •35· 201145381 體較佳為濕度低於處理氣體。 [產業上之可利用性] 本發明例如可應用於平板顯示器等半導體裝置之製造。 【圖式簡單說明】 圖1係表示本發明之第1實施形態之大氣壓蝕刻裝置之側 視剖面圖。 圖2係上述大氣壓蝕刻裝置之處理部沿圖1之ΙΙ-ΙΙ線之前 視剖面圖。 圖3係表示本發明之第2實施形態之大氣壓蝕刻裝置之側 視剖面圖。 圖4係上述第2實施形態之大氣壓蝕刻裝置沿圖3iIV IV 線之前視剖面圖。 圖5係表示本發明之第3實施形態之大氣壓蝕刻裝置之側 視剖面圖。 圖6係上述第3實施形態之大氣壓蝕刻裝置之處理部沿圖 5之VI-VI線之俯視剖面圖。 圖7係表示上述第3實施形態中搬送被處理基板時之氣流 變動之側視圖’（a)係未搬入被處理基板之狀態，（b)係被 處理基板之端部位於搬入口之狀態，（c)係被處理基板已搬 入至處理空間之内部之狀態。 圖8係表示實施例1中各加熱器設定溫度下之第1面及第2 面之蝕刻速率之圖。 圖9(a)係表示實施例1中當加熱器設定溫度為25^時第i 面及第2面之飯刻速率於基板寬度方向上之分佈之圖。 154223.doc -36- 201145381 圖9(b)係表示實施例1中當加熱器設定溫度為3(rc時第i 面及第2面之蝕刻速率於基板寬度方向上之分佈之圖。 圖1 〇(a)係表不貫施例1中當加熱器設定溫度為35時第1 面及第2面之蝕刻速率於基板寬度方向上之分佈之圖。 圖10(b)係表示實施例1中當加熱器設定溫度為45〇c時第 1面及第2面之蝕刻速率於基板寬度方向上之分佈之圖。 圖11係表示HF及H2〇於各溫度下之凝結條件之圖。 圖12係表示以第3實施形態之蝕刻裝置為例的HF及Η" 於各溫度下之凝結條件之圖。 【主要元件符號說明】 1、ΙΑ、1B 大氣壓蝕刻裝置 9 被處理基板 9a 第1面 9b 第2面 10 原料氣體供給機構 11 氟系原料供給部 12 水添加部 20 處理部 21 頂板 22 底板 23 處理空間 23a 第1處理空間部 23b 第2處理空間邹 24 側壁 154223.doc •37· 201145381 25 輥孔 26 搬入口 27 搬出口 29 處理部内空間 30 搬送機構 31 棍軸 32 搬送輥 33 搬入用輥式輸送機 34 處理用輥式輸送機 35 搬出用輥式輸送機 40 噴出喷嘴 41 噴出口 42 整流部 50 抽吸嘴 51 吸入口 60 電漿生成部 61 電極 62 放電空間 70 防護罩 74、86 端壁 75 氣密軸承 80 氣體抽吸系統 81 抽吸泵 82、84 輔助板 154223.doc -38- 201145381 83、85 抽吸路徑 a 箭頭 d〇 處理空間23之厚度 d, 頂板即板式加熱器21之下表面與被處 理基板9之上表面的距離 gl 處理氣體 g2、g2a、g2b 外部氣體 WD 工作距離 154223.doc 39-Voltage between electrodes: Vpp = 12.8 kV Frequency of voltage between electrodes: 25 kHz (pulse wave) Power supply: DC voltage before pulse conversion = 370 V, current = 9.4 A The displacement from the suction port 51 is set to 500 slm . Thereby, the external air introduced into the processing space 23 from the inlet 26 is approximately 120 slm. The partial pressure of hydrogen fluoride in the processing gas and the processing environment in the processing space 23 is 6.2 Torr. The temperature around the device (at room temperature) was 25 at atmospheric pressure. (: The relative humidity is about 30%. As shown in Fig. 11, the partial pressure of water vapor corresponding to the relative humidity is 7.1 Torr. Further, the condensation of hydrogen fluoride and water in the treatment environment is about 27°. C. The initial temperature before the substrate 9 to be processed is carried into the processing space 23 is 25 ° C. The object to be processed 9 is transported in the processing space 23 by the arrow a in the X direction. The number of times the substrate to be processed 9 passes through the processing space 23 (The number of scans is one time) 154223.doc • 31- 201145381 The transport speed of the substrate to be processed 9 is set to 4 m/min. The process gas system is ejected from the discharge nozzle 40, and the substrate to be processed 9 is carried into the processing space 23 Before starting, the process continues until the substrate 9 to be processed is carried out of the processing space 23. The plate heater 2 1 as the top plate is held at the set temperature, and the temperature of the j-th surface 9a is further adjusted. The set temperature of the heater 21 is 25 ° C. , 30 ° C, 35. (:, 45 ° C four temperatures. At 25 ° C, condensation formed on the lower surface of the top plate 21. At 3 (rc, 35 ° C, 45 ° C 'on the top plate 21 No condensation formed on the lower surface. Further, if the top plate 21 is heated from 25 ° C, it is heated to 27 ° C. The condensation disappears at ~28〇c. The etching rate of the SiN film on the first surface 9a and the SiN film on the second surface 9b is measured for the substrate 9 to be processed. The measurement position is set to be the substrate to be processed 9. The central portion of the surfaces 9a and 9b in the X direction is separated by a portion in which the claws are spaced apart in the width direction y. For each measurement position, the etching depth is divided by the number of scans to obtain each scan (one pass per transfer). The amount of etching (nm/sCan). Further, the average value of the etching rates of the respective measurement positions of the respective faces 9a and 9b is obtained. Fig. 8 shows the average etching rate. As shown in Fig. 8, the heater is used. When the temperature is 25 ° C, not only the SiN film on the second surface is etched, but also the SiN film on the i-th surface 9a is etched to the same extent as the second surface side. In the case of rc, it was confirmed that the second surface 9b2SiN film obtained a sufficient amount of etched amount. On the other hand, the amount of contact with the film of the i-th surface 9 & is extremely small, and the SiN film is hardly etched. 154223.doc -32· 201145381 The heater set temperature is 35 ° C and 45 ° C is also the same as 30 t, the second surface 9b SiN film In the above, the SiN film of the first surface 9a was hardly etched. From the above results, it was confirmed that the temperature of the first surface 9a was higher than the condensation point of hydrogen fluoride and water in the treatment environment. And the temperature of the second surface 9b is lower than the condensation point', and the second surface 9b can be etched while suppressing or preventing the first surface % from being etched. Fig. 9 and Fig. 1 are the above-described respective measurements of the respective surfaces 9a and 9b of the lanthanum system. The etch rate of the position ' represents the distribution of the etch rate in the width direction y. As shown in Fig. 9(a), when the heater is set to a temperature of 25. (: When the etching rate of the first surface 9a' the second surface 9b is larger depending on the position in the width direction y, the unevenness may be considered in consideration of the influence of the conveying roller 33. The arrangement of the conveying roller 33 The positions are the positions of 35 mm, 0 mm, and 35 mm on the horizontal axis of Fig. 9 and Fig. 1. Relative to this 'as shown in Fig. 9(b), when the heater set temperature is 3 〇 it' The etching rates of the first surface 9a and the second surface 9b are substantially uniform. As shown in Fig. 10 (a) and Fig. 10 (b), the heater set temperature is 35 ° C and 45 C is also 30 (: At the same time, the etching rates of the first 'first surface 9a and the second surface 9b are substantially uniform. From the above results, it can be understood that not only the temperature of the i-th surface 93 is higher than the condensation point of hydrogen fluoride and water in the treatment environment, It is possible to suppress the etching of the first surface 9a and improve the etching uniformity of the first surface 9a and the second surface 9b. Further, as shown in Fig. 11, the HF-KhO system is calculated based on the gas-liquid equilibrium curve of the HF aqueous solution. According to the temperature, the condensation conditions are changed and plotted. 154223.doc •33· 201145381 In the S Haitu, the horizontal dotted line indicates the relative humidity (% RH), corresponding The H2〇 partial pressure of the treatment environment. In this figure, the point corresponding to the h2〇 partial pressure (7.1 Toit (relative humidity 30%)) & HF partial pressure (6 2 T〇rr) of the treatment environment of Example 1 A is located on the gas phase side with respect to the gas-liquid equilibrium curve of 25 ° C, and is located on the liquid phase side with respect to the gas-liquid equilibrium curve above 30 ° C. Therefore, the results of Example 1 and theoretical calculations can be confirmed. The data is consistent. Therefore, when setting the processing conditions, the map illustrated in the figure is used to treat the hf partial pressure and the partial pressure of the environment corresponding to the point on the above graph compared to the room temperature or the substrate to be processed 9 The gas-liquid equilibrium curve corresponding to the initial temperature is located on the gas phase side, and is set on the liquid phase side compared to the gas-liquid equilibrium curve corresponding to the heater set temperature, and the heater set temperature or treatment is set. The gas parameter (the flow rate of the raw material gas component, the amount of the water vapor added, etc.) may be used. Fig. 12 is a view showing the condensation conditions of the HF_H2 system in the etch device iB of the third embodiment (Fig. 5 to Fig. 7). In the silver engraving device, the external gas is almost not entered into the processing space. In the case of 23, the gas composition of the treatment environment is substantially the same as the gas composition of the plasma after the plasma treatment. The fluorine-based raw material gas after humidification is the process gas before the plasma treatment (CF4+Ar+H2〇). The partial pressure is, for example, 10.8 Ton· (one point chain line L1 in Fig. 12). The water in the process gas is decomposed by plasma formation. Therefore, the plasma of the plasma after the plasma treatment is divided and before the partial pressure and the plasma In contrast to the decrease, for example, it becomes HT 〇rr (broken line L2 in Fig. 12). Further, the HF partial pressure of the plasma after the plasma treatment is, for example, 4.2 Torr (broken line L3 in Fig. 12). The intersection point B between the broken line L2 and the broken line L3 indicates the HF and HsO partial pressures of the plasma after the plasma treatment, and further indicates the HF and the partial pressure of the helium in the processing environment in the processing space 23. Therefore, the temperature outside the second surface of the substrate to be processed 9 is only 154223.doc • 34· 201145381. The temperature of the point B is lower than the temperature of, for example, 251, that is, a condensation layer of hydrofluoric acid is formed on the second surface 9b. The second surface 9b is surely etched. Further, the temperature of the first surface 9a of the substrate 9 to be processed is heated by the heater 21 to a temperature higher than the temperature of the point B, for example, 30. (: Left and right, the formation of the condensation layer on the first surface 9a can be avoided, and the first surface 9a can be surely prevented from being etched. Further, the temperature of the first surface 9a of the substrate 9 to be processed can be prevented by the heater 21 Heating to a temperature higher than the point B can also prevent the first surface 9a from being etched. The composition of the gas in the treatment environment is as shown in point B of Fig. 12 above, and the case where the distance of the processing ring is 2 5 C is In the third embodiment shown in Fig. 5, the distance between the lower surface of the heater 21 and the first surface 9a of the substrate to be processed 9 is increased. The environment of the processing space 23 is the condition shown by the point ' The substrate to be processed 9 enters into the processing space 23' from the inside of the substrate to be processed, and the external gas is taken in. However, the process gas that is ejected and the exhaust gas that is carried out before the processing space by the suction path 83 on the carry-in side are external. The gas does not enter the second processing space portion 23b between the second surface 9b and the upper surface of the discharge nozzle 40. On the other hand, the outside air enters the first processing space portion between the i-th surface 9a and the heating benefit 21. μ a. Thus, the HF partial pressure of the first processing space portion 23a is lowered, and the processing environment is The partial pressure composition changes from point 8 to the gas phase side of the gas-liquid equilibrium curve across 25 ° C. Therefore, the first layer 9 & does not form a condensation layer, and the first surface 9a is not subject to the surname. By appropriately adjusting the distance between the lower surface of the heater 21 and the first surface 9a of the substrate to be processed 9, the amount of external air to be injected into the first processing space portion 23a by the substrate to be processed 9 can be controlled, so that It is also possible to roughen only the second surface 9b by heating with the heating benefit 21. At this time, the external air 154223.doc • 35· 201145381 preferably has a lower humidity than the processing gas. [Industrial Applicability] The present invention Fig. 1 is a side cross-sectional view showing an atmospheric pressure etching apparatus according to a first embodiment of the present invention. Fig. 2 is a view showing a processing section of the above atmospheric pressure etching apparatus. Fig. 3 is a side cross-sectional view showing an atmospheric pressure etching apparatus according to a second embodiment of the present invention. Fig. 4 is an atmospheric pressure etching apparatus according to the second embodiment, taken along line IV of Fig. 3i. Previous view of the section. Fig. 5 is a side cross-sectional view showing the atmospheric pressure etching apparatus according to the third embodiment of the present invention. Fig. 6 is a plan sectional view taken along line VI-VI of Fig. 5 of the processing portion of the atmospheric pressure etching apparatus according to the third embodiment. 7 is a side view showing a change in airflow when the substrate to be processed is transported in the third embodiment (a) is a state in which the substrate to be processed is not carried, and (b) is a state in which the end portion of the substrate to be processed is placed at the entrance. c) The state in which the substrate to be processed has been carried into the processing space. Fig. 8 is a view showing the etching rates of the first surface and the second surface at the respective heater setting temperatures in Example 1. Fig. 9(a) The graph showing the distribution of the cooking rate of the i-th surface and the second surface in the substrate width direction when the heater set temperature is 25^ in the first embodiment. 154223.doc -36- 201145381 Fig. 9(b) is a view showing the distribution of the etching rate of the i-th surface and the second surface in the substrate width direction when the heater set temperature is 3 (rc) in the first embodiment. 〇(a) is a diagram showing the distribution of the etching rate of the first surface and the second surface in the substrate width direction when the heater set temperature is 35 in Example 1. Fig. 10(b) shows Embodiment 1 A diagram showing the distribution of the etching rate of the first surface and the second surface in the substrate width direction when the heater set temperature is 45 〇 c. Fig. 11 is a graph showing the condensation conditions of HF and H2 at each temperature. Fig. 12 is a view showing condensing conditions of HF and Η at the respective temperatures in the etching apparatus of the third embodiment. [Description of main components] 1. ΙΑ, 1B atmospheric pressure etching apparatus 9 substrate 1a to be processed 9b second surface 10 raw material gas supply mechanism 11 fluorine-based raw material supply unit 12 water addition unit 20 processing unit 21 top plate 22 bottom plate 23 processing space 23a first processing space portion 23b second processing space zou 24 side wall 154223.doc •37· 201145381 25 Roller hole 26 Carrying in port 27 Carrying out port 29 Handling section Inner space 30 Transfer mechanism 31 Roller shaft 32 Transport roller 33 Roller conveyor for loading 34 Roller conveyor for processing 35 Roller conveyor for carry-out 40 Jet nozzle 41 Jet port 42 Rectifier 50 Suction nozzle 51 Suction port 60 Electric Slurry generating portion 61 electrode 62 discharge space 70 shield 74, 86 end wall 75 gas tight bearing 80 gas suction system 81 suction pump 82, 84 auxiliary plate 154223.doc -38- 201145381 83, 85 suction path a arrow d厚度 processing space 23 thickness d, the top plate is the distance between the lower surface of the plate heater 21 and the upper surface of the substrate to be processed 9 gl processing gas g2, g2a, g2b external gas WD working distance 154223.doc 39-

Claims (1)

201145381 七、申請專利範圍： 種钮刻方法’其特徵在於：其係於接近大氣壓之壓力 下對3有含矽物且具有第1面與該第丨面之背面側之第 2面的被處理基板進行_者，該方法係 將上述被處理基板配置於含有氟化氫蒸氣及水蒸氣之 處理環境中，並且 以上述第1面之溫度高於上述處理環境之氟化氫及水 之凝、點，且上述第2面之溫度在上述凝結點以下之方 式進行調節。 2·如請求項1之飯刻方法，其中上述第i面之溫度較上述凝 結點局0 C以上〜40°C。 3. 如請求項1之餘刻方法，其中上述第2面之溫度較上述凝 結點低(TC〜10°C。 4. 如π求項1至3中之任一項之蝕刻方法其中自與存在上 述處理環境之處理空間相連之搬人σ將上述被處理基板 搬入至上述處理空間中，自與上述處理空間相連之搬出 口將上述被處理基板搬出，且於上述搬入口附近及上述 搬出口附近抽吸氣體。 5. —種蝕刻裝置，其特徵在於··其係在接近大氣壓之壓力 且濕度超過0%之處理空間内，對含有含矽物且具有第ι 面及該第1面之背面側之第2面的被處理基板進行敍刻 者，其包括： 喷出喷嘴，其係將含有氣化氯及水中之至少亂化氨的 處理氣體供給至上述處理空間内，使其接觸上述被處理 154223.doc 201145381 基板之至少上述第2面；及 調節機構’其係以上述第i面之溫度高於上述處理空 間中的敗化氫及水之凝結點，且上述第2面之溫度在上 述凝結點以下之方式進行調節。 6‘如請求項5之蝕刻裝置，其中上述調節機構包含加熱 器，該加熱器係隔著上述處理空間中之配置上述被處理 基板之位置而於上述喷出喷嘴之相反側接近上述位置而 配置，且上述加熱器之設定溫度較上述凝結點高〇〇C以 上〜60°c。 7.如請求項5或6之蝕刻裝置，其中上述調節機構將上述第 2面之溫度調節為較上述凝結點低0°C〜10°C。 154223.doc201145381 VII. Patent application scope: A method for engraving a button is characterized in that it is treated under a pressure close to atmospheric pressure to a second surface having a sputum and having a first surface and a back surface side of the ninth surface. In the method, the substrate to be processed is disposed in a treatment environment containing hydrogen fluoride vapor and water vapor, and the temperature of the first surface is higher than a condensation point of hydrogen fluoride and water in the treatment environment, and the above The temperature of the second surface is adjusted so as to be below the condensation point. 2. The method of claim 1, wherein the temperature of the i-th surface is greater than 0 C to 40 ° C above the condensation point. 3. The method of claim 1, wherein the temperature of the second surface is lower than the condensation point (TC~10 ° C. 4. The etching method according to any one of π items 1 to 3 The transfer σ having the processing space connected to the processing environment carries the substrate to be processed into the processing space, and the substrate to be processed is carried out from the transfer port connected to the processing space, and the transfer port is near the transfer port and the transfer port A gas is pumped nearby. 5. An etching device characterized in that it is contained in a processing space close to atmospheric pressure and having a humidity exceeding 0%, and contains a yttrium-containing material and has a first surface and the first surface. The substrate to be processed on the second surface on the back side is engraved, and includes: a discharge nozzle that supplies a processing gas containing at least vaporized ammonia in vaporized chlorine and water to the processing space to be in contact with the above 154223.doc 201145381 at least the second surface of the substrate; and an adjustment mechanism 'the temperature of the ith surface is higher than a condensation point of the dehydrogenated hydrogen and water in the processing space, and the temperature of the second surface The etching apparatus according to claim 5, wherein the adjustment mechanism includes a heater that is ejected from the position of the substrate to be processed in the processing space. The opposite side of the nozzle is disposed close to the above position, and the set temperature of the heater is higher than the condensation point by 〇〇C or more and 60° C. 7. The etching apparatus according to claim 5 or 6, wherein the adjustment mechanism is the above The temperature of the two faces is adjusted to be 0 ° C to 10 ° C lower than the above condensation point. 154223.doc
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