TW201123229A - High-k material - Google Patents

Abstract

Disclosed is a high-k material, including (a) 0.6 to 1 parts by weight of composite powder such as conductive-insulate composite powder, conductive-semi conductive composite powder, or combinations thereof, (b) 58 to 79 parts by weight of high-k ceramic powder, and (c) 20 to 41 parts by weight of organic resin. Because the high k material has a dielectric constant greater than 100, an insulation resistance greater than 1M Ω and a leakage current less than 50 μ Amps under appropriate operation voltage, it is suitable to be applied as the dielectric material in embedded printed circuit boards.

Description

201123229 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a high dielectric material composition, and more particularly to a conductive/insulating composite powder and/or a conductive-semiconducting composite powder in a composition. [Prior Art] In order to meet the demand for high functionality and high speed and high frequency of electronic products, active components and passive components on the electronic component substrate must be increased. This increases the board area and increases the cost. In order to meet the demand for light, thin and short, the density of circuit components is bound to increase, causing electromagnetic interference and noise to increase and decrease: sin. In order to solve this problem, it is necessary to improve the passive components, such as the integration of capacitance. In order to achieve the above objectives, a polymer-shock composite material that combines the mechanical properties of a polymer with the high dielectric properties is the best choice for this electric valley material. It is also the main development of buried capacitors at home and abroad. trend. In recent years, a lot of buried capacitor technology has been discussed: 'Although the development of the human passive component technology has gradually entered the actual product', there is still a lot of room for improvement, and it has become active in recent years. In the field of technology, and the publication of patents, there is also a scene of white humming. Material = Application of dielectric materials, how to improve the bottleneck and focus of composite pure ceramic materials development. Single:::,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Too high will make the 201123229 mechanical properties lower, and the adhesion between the copper box and the copper box will be greatly reduced, because the supply of: 3 composite (four) added conductive nano powder, u ^ another way. However, the increase in the conductive powder will also result in an increase in leakage current due to the dielectric constant of the low material system, which will be reduced. Regulation and reliability' and limit its application in the electronics industry. (IV) i/related patents are mostly exposed capacitor manufacturing methods, powder species (V 1 resin, etc., not for low leakage current (Leakage

Structure and material of characteristics such as electric constant and high capacitance density The focus of the present invention is to disclose an organic material having a high dielectric constant (dk > (10)), and a machine mixture (four) 'the addition of conductive, cast and/or conductive _ The insulating composite powder replaces the conductive powder (carbon black). In addition, the present invention emphasizes that the edge resistance and the leakage current can be controlled under a high dielectric constant, and the patents of other companies or units are different. Several patents or papers related to the case are presented here, and the differences from the case are compared to highlight the features of the present invention. The method commonly used in the literature to modify the surface of carbon material Ti〇2 is sol-gel method (sol-gel) and hydrothermal method. Because the hydrothermal method needs to carry out the reaction under high temperature and high pressure, the method of sol-gel is adopted. Most commonly used, Sigmund et al. (Adv. Mater. 2009, 21, 1-7) published a TiO 2 layer on the surface of a carb〇n nanotube using a sol-gel method. Apply it to the field of photocatalyst catalysis,

Dong_Hwang Chen et al. (Nanotechnology, 2009, 20, 105704) also used the same method to coat Ti〇2 on the surface of Ag and NiAg nanoparticles to increase the photocatalytic efficiency of the material in visible light. In addition, Rutlsdge et al. (Adv. Mater. 2009, 21, 1252-1256) used the LbL method to adsorb the Ti〇2 nanopowder on the surface of the 201123229 nanofiber directly omitting the post-hydrolysis step' and this type The material is applied in the fields of pr〇tective clothing system, sensor and the like. In U.S. Patent No. 5,813,930, Cabot discloses a dual phase nanofiller (CSDPF: carb〇n/smC() n dual phase fillers) for use in rubber reinforcements, utilizing steam-modified carbon black containing cerium compounds at high temperatures. It can be TEOS: tetra-ethy 1-ortho-silicate, TMOS: tetra-methyl-ortho-Silicate, and its filled SS-BR (soluble polybutyrate) In the benzene rubber) ternary nanocomposite, the network structure formed by the filler is small, the interaction between the filler and the filler is small, and the interaction between the filler and the matrix SSBR is large. Its carbon black has not been cleaned after being modified and is directly mixed with rubber. The Si content is high and only mentioned in the rubber industry. In US Patent US7137423 and US7351763, The

Goodyear Tire & Rubber discloses carbon black for use in the rubber industry. The filling material consists of (1) 35 to 95 phr or 50 to 95 phr of Silanol functionalized carbon black surface. The surface of the Shiki gum has -OH (Si-OH). (2) 5~65phr or 5~50phr of synthetic amorphous or precipitated type 〇2 mixed with unmodified carbon black and reacted with modified carbon black by a special coupling agent of defined chain length structure Improve compatibility with resins. The above method improves the characteristics of the carbon black filling by mixing the Shiki gum. In the patent JP1101375, TOKAI RUBBER discloses modified conductor materials used in the rubber industry, such as carbon powder, carbon fiber, emulsified conductive powder, etc., whose specific resistance is less than 106 Ω·(; A coupling agent having a specific resistance greater than the coupling agent 201123229 (coupling agent) such as a sjiane_based C0Upiing agent, a titanium-based coupling agent (titanium_based C0Upiing agent), or a coupling agent (aluminate-base) A coupling agent or the like is used to increase the specific resistance of the conductor material. Therefore, the carbon black powder modified by decane is mostly used in the rubber industry, and is significantly different from the application field of the present invention. [Invention] The present invention provides a high The dielectric material comprises (a) 6.6 to 1 part by weight of the composite powder, which is a conductive-insulating composite powder, a conductive semi-conductive composite powder, or a combination thereof; (b) 58 to 79 parts by weight a high dielectric ceramic powder; and (c) 20 to 41 parts by weight of an organic resin. [Embodiment] Due to the interface polarization of the conductive nanopowder when an electric field is applied Interfacial polarization mechanism, which allows the movable electric charge to be blocked by the interface or detained by the material, and utilizes the high surface of the nanoparticle to enhance this effect' provides a dielectric constant for enhancing the polymer-ceramic composite. However, the above method will increase the dielectric loss of the composite material system at the same time, resulting in an increase in leakage current and limiting the applicability of such materials. The present invention first provides conductive powders such as transition metals, transition metal alloys, carbon black, carbon. Dimension, or a combination thereof, wherein the carbon black comprises a high structure carbon black, a low structure carbon black, a carbon black having a _C00H or _〇H functional group on the surface, or a combination thereof, and then a layer of discontinuity is modified on the surface of the conductive powder. Semiconductor materials such as metal oxide titanium oxide, zinc oxide, aluminum zinc oxide, or a combination thereof, 201123229 = conductive ~ semi-conductive composite powder, or repaired on the surface of conductive powder: ',:, ', edge material Such as yttrium oxide to form a conductive 'insulating composite powder. Ertian, no, continue to modify the semiconductor material or insulating material and ^ electric powder' will expose part of the conductive The surface of the body is between the surface of the electric powder and the surface of the unmodified surface 0. —* J ) 0.4 0.4 to the surface of the surface of the conductive powder modified by the electric powder is higher than the cut range or even = Wang Wujin will lose the effect of the original conductive powder, making the Dk value not as expected. However, if the surface ratio of the conductive powder is modified: lower than the upper bound, the characteristics of the powder approach the conductive powder, and the effect of reducing leakage can not be achieved. - In one embodiment, a highly conductive carbon black powder may be used, and the method used to modify the semiconductor material Ti〇2 on its surface is a layer-by-layer.

L b L ), the opposite electrical precursor is adsorbed on the surface of the conductive carbon black powder by electrostatic attraction, because the precursor itself has opposite electrical properties, so it can be self-assembled. The method is sequentially adsorbed on the surface of the carbon black. The Ti〇2 precursor used in the experiment is TaLH (Titanium(IV)bis(ammoniumlactato)dihydroxide), and has the following characteristics compared with the precursors generally forming Ti〇2 such as Ti(〇H)4 or Ti(0R)4. Advantages. TALH is a fairly stable water-soluble compound at room temperature, and the hydrolysis process is easy to control. In summary, the temperature of the hydrolysis process can be lowered, and the influence of the external environment (PH値, solvent type, acid-base) can be avoided, and the reliability can be improved. As the number of adsorbed layers changes, the thickness of the peripheral cladding layer and the content of the precursor can be adjusted, and then the organic portion of the precursor is burned off by the high temperature calcination step. During the calcination process, PDADMAC (polydiallyldimethylammonium chloride) will be burned off, leaving only the titanium ions in the former 201123229 TALH to be converted into a titanium oxide structure to modify the surface of the powder to form a conductive-semiconducting composite powder. The structure and surface morphology of the composite powder were identified by XRD and TEM, which proved that the discontinuous oxidation layer modified part of the carbon black surface. In an embodiment, a south conductive carbon black powder may be used, and the insulating material Si〇2 is modified on the surface thereof. Precursor such as tetraethoxymethas

Fisher Chemical) (TEOS: tetra-ethyl-ortho-silicate, from

Pretreatment before treatment and washing and drying 'catalyst can be hydrochloric acid, sulfuric acid, acid, acetic acid, ammonia, etc., the solvent is short alcohol such as decyl alcohol, ethanol, propanol, etc., after drying at 120 ° C ~ 220 ° C after treatment A conductive carbon black composite powder modified by a discontinuous ruthenium oxide layer is obtained. In the embodiment, the conductive powder such as carbon black is pretreated with a zinc oxide precursor as follows. Conductive carbon black is preceded by an oxidation precursor such as zinc acetate dihydmte (Zn(CH3COO) 2 · 2h2〇) or zinc perchlorate hexahydrate '(Zn(C1〇4)2.6H2〇) Treatment, washing and drying, the catalyst can be sodium hydroxide, hydroxide dehydration, ammonia water, etc. • The solvent is short alcohol such as decyl alcohol, ethanol, propanol, etc., after drying, it is dried after 12 generations ~ 22 ° ° C. The conductive carbon black composite powder modified by the zinc oxide layer is replaced by the above-mentioned partially modified conductive powder to replace the previously added high-conductivity carbon black powder, and is mixed with the high dielectric ceramic material into the organic resin. It can effectively improve the high leakage current and low insulation resistance of high dielectric organic/inorganic hybrid materials at high frequency. The composition of the composition includes: (8) Conductive/insulating composite powder or conductive/semiconductive composite powder, or above a combination of (b) a high dielectric ceramic powder; and 201123229 (c) 20 to 41 parts by weight of an organic resin. The weight ratio of the composite powder is from 0.6 to 1 based on 20 to 41 parts by weight of the organic resin. Weight by weight, and the weight ratio of high dielectric ceramic powder Between 58 and 79 parts by weight. If the weight ratio of the composite powder is too high, the dielectric constant and the leakage current are accompanied by an increase. If the weight ratio of the composite powder is too low, the increase in the dielectric constant may be insufficient. If the weight ratio of the high dielectric ceramic powder is too high, it will affect the processability of the subsequent process. The above high dielectric ceramic powder may be BaTi03, Ba(Sr)TiO3, SrTi03, NPO, containing metal ion dopants. The above composition, or a combination thereof, has a particle diameter of between 30 nm and 2 μm. The organic resin may be a phenol resin, an epoxy resin, or a combination thereof, wherein the epoxy resin comprises a bisphenol fluorene epoxy resin and a ring. An aliphatic epoxy resin, a naphthyl epoxy resin, a biphenyl epoxy resin, a novolac epoxy resin, or a combination thereof. In an embodiment of the invention, the high dielectric material may further comprise 3.5 to 5.0 weight. a sclerosing agent, 1.8 to 2.5 parts by weight of a polymer dispersant, 1.0 to 1.5 parts by weight of a polymer softener, or a combination thereof. The hardener may be a bisamine, a dianhydride, a phenol resin, or a combination thereof. Its role is to improve Crosslinking density between oxygen resins. If the amount of the hardener added exceeds the above range, the thermal stability of the resin may be deteriorated. The polymer dispersant contains an amine group/amino group, which may be a polyamide or a polyamide. An imine, a polyurea, a polyurethane, or a combination thereof, which has a good adhesion to a powder and an excellent compatibility or a slight reactivity with an organic resin, and can greatly improve the heat resistance of a material system. And stability. If the amount of the polymer dispersant added exceeds the above range, excessive dispersant may also affect the thermal stability of the material system. The polymer softener may be a hydroxyl-containing polymer resin, including 201123229 South molecular resin, propylene-containing 13⁄4 molecular resin, amine/amino-containing polymer resin, aliphatic chain-containing epoxy resin, or a combination thereof, which functions to maintain the flexibility of the material system to achieve post-processability Demand. The invention will investigate the influence of different modification ratios and the addition of different content of conductive-semiconducting composite powder on the dielectric properties and leakage current properties of the composite material, and the obtained high dielectric mixture can be impregnated by the traditional fiberglass cloth. High-dielectric material with precision coating technology or screen printing technology, its dielectric constant is greater than 100, its insulation resistance is greater than 1ΜΩ under operating voltage, and leakage current is less than 50mA, which is very suitable as a capacitive circuit. The dielectric material of the board. The above and other objects, features, and advantages of the present invention will become more apparent from the aspects of the appended claims. 10 g of conductive carbon black (purchased from Degussa, particle size of about 30 nm) was placed in 100 ml (5 wt%) of TALH aqueous solution, stirred for 24 hours, filtered and washed several times and dried, and then the surface contained TALH-adsorbed conductive carbon. Black is placed in an oven at 400 ° C for high temperature calcination for 2 hours. During calcination, the organic functional groups in the precursor TALH are removed, and a discontinuous TiOx structure is formed on the surface of the conductive carbon black, that is, the conductive-semiconducting composite of the present invention. Powder. After XRD and TEM identification, the above discontinuous titanium oxide layer only repaired the surface of the carbon black instead of completely covering the carbon black. Powder of Example 3-5 10 g of conductive carbon black (purchased from Degussa, particle size of about 30 nm) was placed in a 100 ml (5 wt ° / 〇) TALH aqueous solution, stirred for 24 hours, filtered and washed several times and dried. Then, the conductive carbon black containing TALH adsorption on the surface was redispersed in 200 ml of pre-formed aqueous solution of PDADMAC (1 mgml 'O.Ol M NaCl), stirred for 24 hours, filtered and washed several times and dried. The conductive carbon black adsorbed on the surface containing TALH/PDADMAC was redispersed in 100 ml (5 wt%) of TALH aqueous solution, and the process steps of these experiments were repeated alternately to obtain the desired number of layers of Ti〇2 coated composite powder. . Powder of Example 6-7 10 g of conductive carbon black was placed in 5 mL of 〇. 7 wt% TEOS, 0.7 wt% deionized water, and 〇. 3 wt% catalyst (NH4OH) alcohol solution, 60 ° C Stir for 2 hours, then filter and wash several times and dry, then place the surface containing SiOx-adsorbed conductive carbon black into a 21-inch oven for 2 hours. Satin burning process will remove the organic matter in the precursor TEOS. The functional group and the discontinuous SiOx structure are modified on the surface of the conductive carbon black, that is, the conductive-semiconductive composite powder of the present invention. After XRD and ruthenium identification, the above-mentioned discontinuous SiO2 layer only modifies part of the carbon black surface rather than completely coating the carbon black. 1 g of the conductive carbon black was placed in 500 ml of a solution of 0 wt% zinc acetate (zinc acetate dihydrate ‘Zn(CH3C00) 2.2H20), 0.05 wt% of a catalyst (KOH) in decyl alcohol, 6 Torr. After stirring for 2 hours, the number of filtered cleanings was 201123229 times and dried. Then, the conductive carbon black containing ZnO adsorbed on the surface was placed in an oven at 21 ° C for 2 hours, and the precursor zinc sulfate dihydrate was removed during the calcination. The organic functional group is formed and a discontinuous ZnO structure is formed on the surface of the conductive carbon black, that is, the conductive-semiconductive composite powder of the present invention. After XRD and TEM identification, the discontinuous ceria layer only modified part of the carbon black surface instead of completely coating the carbon black. Preparation of high dielectric materials: • In the present invention, first epoxy resin, including bisphenol-A diglycidyl ether [828EL, Shell Chem], Sishuangshuang A diglycidyl Ether (tetrabromo disphenol-A diglcidyl ether) [EHCLON 153, DIC], cyci〇aliphatic epoxy resin [EPPN-502H, Nippon Chemical], multi-functional

Polyfunctional epoxy resin [EHCLON HP 7200H, DIC], add appropriate amount of DMF, and then heat to 9 ° ° ° ~ 95 ° C to completely dissolve the epoxy resin, cool to room temperature, make it into a resin solution . # According to the ratio of the first table, add an appropriate amount of resin solution to add 1.8~2.5 parts by weight of the polymer resin to the polymer dispersant and DMF/nonylbenzene as a mixed solvent. After stirring evenly, add the composite powders of Examples 1-7 or compare them. The unmodified conductive powder in Example ι_2 was heated to 80 t after high-speed dispersion using a homogenizer, and then an appropriate amount of hardener Diaminodiphenyl sulfone (DDS, purchased from ACROS) was added, and an appropriate amount of catalyst III was added. Boron trifluoride mono-ethylamine (abbreviated as BF3-MEA, available from ACROS). When the hardener and the catalyst are completely dissolved in the resin solution, an appropriate amount of the polymer softener is added, which accounts for about 1 232 ς ς Α Α 重量 实际 , 2011 2011 2011 2011 2011 2011 , , , , , , , , , , , , , , , , , , Warm, make it a < embossed or unmodified carbon black / resin composite. /, a dielectric ceramic powder (BaTi〇3) is added to the above carbon black/resin composite material, and the mixture is uniformly stirred at a desired rate to form a high dielectric composite material mixed solution of the present invention (as shown in Table 1). The solution of the high dielectric composite material prepared in different composition ratios is coated on the copper foil, and the solvent is used to remove the solvent from the B-Stage of the effective control tree to partially cure the copper backing. v# RCC, and the adhesive copper foil and copper foil were respectively pressed and hardened by a hot press to form a capacitive substrate material, and finally the electrical characteristics were tested, and are summarized in Table 2. High dielectric material composition of the first embodiment and the comparative example _ • Composition (S) Comparative Example 1 Comparative Example 2 Example 1 Example 2 Example 3 Example 4 Example 5 Carbon black/resin binder 21.66 21.51 21.66 21.51 21.51 21.51 21.51 Hardener 2.3 2.3 2.3 2.3 2.3 2.3 2.3 Catalyst 0.04 0.04 0.04 0.04 0.04 0.04 0.04 Dispersant 3.0 3.0 3.0 3.0 3.0 3.0 3.0 Softener 1.52 1.52 1.52 Γ 1.52 1.52 1.52 1.52 _ - An unmodified conductive powder 0.86 1.20 None No No No No LbL modified layer number 0 0 1* 1* 3* 3* 3* Conductive-semiconducting composite powder No 0.86 1.20 1.20 1.20 1.20 Ceramic powder 100 99.5 100 99.5 99.5 99.5 99.5 Composition (g) Example 6 Example 7 Carbon black/resin binder 20.06 20.51 Hardener 2.1 2.1 Catalyst 0.05 0.06 Dispersant 1.11 1.11 Softener 0.69 0.69 Pure carbon black without LbL modified layer SiO 2 ZnO Conductive-semiconducting composite powder 0.533 0.528 Ceramic Powder 34.6 34.4 201123229 In the !! table, the ** refers to a part of the surface of the discontinuous layered oxidized modified conductive carbon black, and the modified structure of the oxidized carbon may be a single layer ( Example 2) or three layers (Example 3·5). As for the discontinuous layered oxidation scheme, Example 6) and zinc oxide (ZnO, Example 7) have a modified structure of a single layer. Two examples and comparative examples of n test

Dielectric constant (1MHz) > Electrical loss (1MHz) _Thickness (Aim) 0-1712 0-2118

Peel strength (lb/in) is less than that used in the ruthenium example. 2 Conductive carbon black without surface modification. When the amount of powder added is increased, the dielectric constant/dielectric loss is also followed by 15 201123229. 2 even if the voltage is too low, the leakage current is quite serious (compared to the resin = no measurement) and the insulation resistance is very small. After the implementation of m-7 comparative example 1 / real two composition ratio of the composite powder As a result, from the comparison of the brocade: II, Comparative Example 2 / Example 2, when the addition of the pass-through powder, the generation of the miscellaneous (four) u electricity (four) low carbon ~ surface modification of the layered Ti〇2 can be reduced Not obvious: another:;:r The mechanism of polarization of the interface is affected: The semiconductor properties of the powder H n7^102 will balance part of the conductivity to improve the insulation resistance: = the effect of reducing the leakage current of the composite material and the carbon black Ratio == pressure., 彳〇) or 疋 实施 2-3 实施 实施 实施 2-3 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Conductive composite powder to regulate composite soldiers = 4 sex 'At the same time, the leakage current of the system can be reduced or maintained at the same time. There is no obvious difference in processability, which can be completely matched. The characteristics of the gate J electrical material are DK> 100, the insulation resistance is greater than Ω, and the current is less than 50 Amps, while the embodiment 6_7 is on the carbon black surface > As a result of ZnO, the analysis of 纟TGA shows that the temperature of the modified conductive powder (4) is increased from 5 to 603 ° C and 596 f, respectively, which should be caused by dioxo or oxidized components. It has also been found that the modified "the withstand voltage (four) degree has been improved. In the comparative example and the embodiment 8_1, a double-layer high dielectric structure was used, and the properties were measured as shown in Table 1. Comparative Example 3 is a two-layer high dielectric structure in which the backing copper foil of Comparative Example 2 and the dielectric layers (10) to 5 〇 and the thickness of -9 (four) of the electric book number are double-laminated, 201123229. Embodiment 8-10 is a double layer formed by double-bonding the backing copper foils of Examples 2, 6, and 7 with a dielectric layer (DK~50, thickness ~9μηι) having a low dielectric constant. Dielectric structure. By such a process, the leakage current of the material system can be greatly reduced, and the insulation resistance and the operating voltage can be increased, and the applicability can be effectively improved. From the above results, it is known that the surface of the conductive powder is used. The composite powder formed by the modification does have an effect of increasing the dielectric constant and concomitantly reducing the leakage current.

Table 3 Electrical test electrical properties of double-layer capacitive substrate material Comparative Example 3 Example 8 Example 9 Example 10 Capacitance 値 (F) 3.7xl0'9 3.3x10·9 2.75xl0'9 2.44xl0*9 Dielectric constant (1MHz) 150 115 96 97 Dielectric loss (1MHz) 0.136 0.077 0.043 0.060 Thickness (//m) 36 31 31 35 Operating voltage (V) 2.0 10 10 10 10 Leakage current density (A/mm2) 1·27χ10-5 >10^ 2.81Χ10'8 3.18x10-10 1.71xl〇·10 Insulation resistance (Ω) 1.57xl03 <104 3.56x10s 3.14x10'° 5.85χ1010 Peel strength (lb/in) 5.6 5.4 5.3 5.5 • Although the present invention The present invention has been described in terms of several preferred embodiments, and is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application attached. 17 201123229 [Simple description of the diagram] None. [Main component symbol description] None.

18

Claims (1)

201123229 VII. Patent application scope: 1. A high dielectric material, including: body, (two or three parts of composite powder, system-conductive-insulating composite powder temperature conductive _+conducting bismuth powder, or a combination thereof (b) 58 to 79 replacement parts of high dielectric ceramic powder; and (c) 20 to 41 parts by weight of organic resin. Conductive 2, the high dielectric material described in item 1, wherein the modification The table* and the unmodified 3. As stated in the application, the high == transition metal, transition metal alloy, carbon black, carbon fiber: the good for the top 且 and the bribe collection includes the oxidized stone eve Shan Ai = The high dielectric material described in claim 3 of the patent scope, the structure carbon black, low structure carbon black in the basin, the surface having a stone of < _ or _ 吕 吕 匕 反, or a combination thereof. =:::=This = modified table *舆 is not 6. The high dielectric material as described in claim 5, ::: body includes transition metal, transition metal alloy, carbon black, carbon fiber?: Combination of the above, and the casting (4) is coated with zinc oxide or a combination thereof. Emulsification, Ming 7· as described in claim 6 An electrical material, wherein the 201123229 carbon black comprises high structural carbon black, low structural carbon black, carbon black having a -COOH or -OH functional group on the surface, or a combination thereof. 8. High as described in claim 1 A dielectric material, wherein the high dielectric ceramic powder comprises BaTiO 3 having a particle diameter of between 30 nm and 2 μm, Ba(Sr)TiO 3 , SrTiO 3 , ruthenium, the above composition containing a metal ion dopant, or a combination thereof. 9. The high dielectric material according to claim 1, wherein the organic resin comprises an epoxy resin, a resin, or a combination thereof. 10. The high dielectric material according to claim 9 Wherein the 0 epoxy resin comprises a bisphenol A epoxy resin, a cyclic aliphatic epoxy resin, a naphthyl epoxy resin, a biphenyl epoxy resin, a novolac epoxy resin, or a combination thereof. The high dielectric material according to claim 9 further comprising 1.8 to 2.5 parts by weight of the polymer dispersant, 1.0 to 1.5 parts by weight of the polymer softener, 3.5 to 5.0 parts by weight of the hardener, or the above Combination. 12. If you apply for a patent The high dielectric material according to item 11, wherein the polymer dispersant contains an amine group/amino group, and comprises a polyamine, a polyamide amine, a polyurea, a polyurethane, or a combination thereof. The high dielectric material according to claim 11, wherein the polymer softener comprises a hydroxyl group-containing polymer resin, a carboxyl group-containing polymer resin, a propylene group-containing polymer resin, and an amine group/amino group-containing polymer. A resin, a fat chain-containing epoxy resin, or a combination thereof. The high dielectric material according to claim 11, wherein the hardener comprises a bisamine, a dianhydride, a phenol resin, or a combination thereof . 15. The high dielectric material as described in claim 1 is used as a dielectric material for 20 201123229 capacitive printed circuit boards. 201123229 IV. Designated representative map (1) The representative representative of the case is: None. (2) A brief description of the component symbols of this representative figure: None. 5. If there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention: No 0