201118506 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種將被曝光體朝〜 時間歇性地將曝光光線照射至該_ =向搬送’且同 圖樣的曝光裝置，詳細朗，係關於〜冑’來形成曝光 整體表面以高分解能高密度地形^在被曝光體之 曝光裝置以及其所使用的光罩。 、'田曝光圖樣的 【先前技術】 習知的曝光裝置係經由光罩來針對以 送之被曝光體間歇性地照射曝光光線， 'ς 圖樣曝光至特定位置的曝光裝置，針對該罩 置:: 皮曝光體搬送方向前方側位置處藉由攝影機構: 订攝衫，根據該攝影圖像來進行被曝光體與光罩之 位置校對’同時控制曝光光線之照射時點G列如，^考 曰本專利特開2008 — 76709號公報）。 一但是，前述習知曝光裝置係藉由垂直穿透光罩的曝 光光線來將形成於光罩上的遮罩圖樣直接轉印至被^ 光體上，由於照射於光罩之光源光線所存在的視角（平 仃半角；Collimation half angle)，被曝光體上之圖樣的 成像會暈染而使得分解能降低，會有無法曝光形成微細 圖樣之虞。 面對前述問題，藉由於光罩之被曝光體側處對應於 遮罩圖樣而設置微透鏡’且將遮罩圖樣縮小投影至被曝 201118506 光體上的方式來解決’但此時，在被曝光體搬送方向之 約略垂直方向上相互鄰接的透鏡之間部分處則無法形 成曝光圖樣’而會有無法在被曝光體之整體表面處形成 局密度微細曝光圖樣的問題。 【發明内容】 此處’本發明為解決前述問題點，其目的在於提供 一種能於被曝光體之整體表面處以高分解能且高密度 地形成微細曝光圖樣的曝光裝置以及其所使用的光罩。 為了達成前述目的，本發明之曝光裝置係將被曝光 體朝一方向搬送’且同時間歇性地將曝光光線經由光罩 而照射至該被曝光體，以對應該光罩上所形成之複數個 遮罩圖樣而於該被曝光體上形成曝光圖樣，其中該光罩 係具備有： 沿該被曝光體之搬送方向之約略垂直方向而將該 複數個遮罩圖樣以特定間距排列所形成之複數個遮罩 圖樣列、以及各自對應該複數個遮罩圖樣列之各遮罩圖 樣而形成於該被曝光體側以將該各遮罩圖樣縮小投影 至該被曝光體上的複數個微透鏡； 能藉由後續之遮罩圖樣列所形成的複數個曝光圖 樣來補足位在該被曝光體搬送方向前方側之該遮罩圖 樣列所形成的複數個曝光圖樣之間處而進行曝光般 地’以沿該複數個遮罩圖樣之該排列方向各自偏移特定 尺寸的方式來形成該後續之遮罩圖樣列以及其各自對 201118506 應之各微透鏡。 藉由前述結構，係具備有：將被曝光體朝—方向搬 送時，沿被曝光體之搬送方向之約略垂直方向而將複數 個遮罩圖樣以特定間距排列所形成之複數個遮罩圖樣 列、以及各自對應複數個遮罩圖樣列之各遮罩圖樣而形 成於被曝光體側以將各遮罩圖樣縮小投影至被曝光體 上的複數個微透鏡； 能藉由後續之遮罩圖樣列所形成的複數個曝光圖 樣來補足位在被曝光體搬送方向前方側之遮罩圖樣列 所形成的複數個曝光圖樣之間處而進行曝光般地，以>VL 複數個遮罩圖樣之排列方向各自偏移特定尺寸的方式 來形成後續之遮罩圖樣列以及其各自對應之各微透 鏡’並間歇性地將曝光光線經由光罩而照射至被曝光 體’以對應光罩上所形成之複數個遮罩圖樣而於被曝光 體上形成曝光圖樣。此時，由於各自對應於各遮罩圖樣 而於被曝光體側處設置有能將各遮罩圖樣縮小投影至 被曝光體上的複數個微透鏡，因此能以高分解能來形成 微細曝光圖樣。又，由於係將位在被曝光體搬送方向前 方側之遮罩圖樣列及其各自對應之各微透鏡以各自偏 移特疋尺寸的^式來形成於複數個遮罩圖樣之該排 故能藉由後續之遮罩圖樣列所形成的複數個曝光 圖樣來奴位在被曝光體搬送方向前方側之遮罩圖樣 數個曝光圖樣之間處來進行曝光。因此， 月η之整體表面高密度地形成曝光圖樣。 201118506 接著，於該遮罩圖樣朝向該被曝光體上所形成之投 影成像中’係對應於該複數個遮罩圖樣之該排列方向的 寬度之整數倍尺寸，各自朝向該排列方向偏移該尺寸的 方式來形成該後續之遮罩圖樣列以及其對應之各微透 鏡。藉此’將位於被曝光體搬送方向前方位置處的遮罩 圖樣列之後續的遮罩圖樣列以及其對應之各微透鏡，於 被曝光體上進行投影的遮罩圖樣之投影成像中，使用以 被曝光體搬送方向之約略垂直方向上寬度之整數倍的 尺寸而各自於被曝光體搬送方向之約略垂直方向上偏 移該尺寸所形成的光罩，而於被曝光體上形成曝光圖 樣°因此’能更高密度地排列形成曝光圖樣。 又’本發明之光罩，係使用於將被曝光體朝一方向 搬送’且同時間歇性地照射曝光光線至該被曝光體以形 成曝光圖樣的曝光裝置中，其中具有： 沿該被曝光體之搬送方向之約略垂直方向而將該 複數個遮罩圖樣以特定間距排列所形成之複數個遮罩 圖樣列、以及各自對應該複數個遮罩圖樣列之各遮罩圖 樣而形成於該被曝光體側以將該各遮罩圖樣縮小投影 至該被曝光體上的複數個微透鏡； 能藉由後續之遮罩圖樣列所形成的複數個曝光圖 樣來補足位在該被曝光體搬送方向前方侧之該遮罩圖 樣列所形成的複數個曝光圖樣之間處而進行曝光般 地’以沿該複數個遮罩圖樣之該排列方向各自偏移特定 尺寸的方式來形成該後續之遮罩圖樣列以及其各自對 201118506 應之各微透鏡。 藉由前述結構，具有沿著被曝光體之搬送方向 略垂直方“將複數個遮罩圖樣以特定間距排带 成之複數個遮罩圖樣列、以及各自對應複數個遮槐 列之各遮罩圖樣而形成於被曝光體侧以將各遮雅 縮小投影至被曝光體上的複數個微透鏡；能藉由後^ 遮罩圖樣列所形成的複數個曝光圖樣來補足 光體搬送方向前方側之遮罩圖樣列所形成的複數個曝 光圖樣之間處而進行曝絲地，以使用沿複數個遮罩圖 樣之排列方向各自偏移特定尺寸的方式㈣成有後續 之遮罩圖樣列以及其各自對應之各微透鏡的光罩來將 被曝光體朝-方向搬送，且同時間歇性地照射曝光光線 以形成曝光圖樣。此時，由於各自對應於各遮罩圖樣而 於被曝光體側處設置有能將各遮罩圖樣縮.小投影至被 曝光體上的複數個微透鏡’ 0此能以高分解能 曝光圖樣。又，於複數個料圖樣之排财向各自偏移 特定尺寸的方式來形成位在被曝光體搬送方向前方位 置處遮罩圖樣列之後續的遮罩圖樣列以及其對應之各 微透鏡，故能藉由後續之遮罩關騎形成的複數個曝 光圖樣來補足位在該被曝光體搬送方向前方侧之該遮 罩圖樣列所形成的複數個曝光圖樣之間處而進行曝 光。因此，能於被曝光體之整體表面高密度地形成曝光 圖樣。 再者，於該遮罩圖樣朝向該被曝光體上所形成之投 201118506 影成像中，係對應於該複數個遮罩圖樣之該排列方向的 寬度之整數倍尺寸，各自朝向該排列方向偏移該尺寸的 方式來形成該後續之遮罩圖樣列以及其對應之各微透 鏡。藉此，將位於被曝光體搬送方向前方位置處的遮罩 圖樣列之後續的遮罩圖樣列以及其對應之各微透鏡，於 被曝光體上進行投影的遮罩圖樣之投影成像中，以被曝 光體搬送方向之約略垂直方向上寬度之整數倍的尺 寸，使用各自於被曝光體搬送方向之約略垂直方向上偏 移該尺寸所形成的光罩而於被曝光體上形成曝光圖 樣。因此，能更高密度地排列形成曝光圖樣。 又再者，於透明基板一側之面處形成有該複數個遮 罩圖樣’並於該透明基板另一侧之面形成有該複數個微 透鏡。藉此，使用了於透明基板一側之面處形成有複數 個遮罩圖樣且於該透明基板另一側之面形成有該複數 個微透鏡的光罩，而於被曝光體上形成曝光圖樣。此 時，由於遮罩圖樣與微透鏡係於同一個透明基板上一體 成形，故不用進行遮罩圖樣與微透鏡之間的位置校對。 因此，光罩之使用便較為容易。 接著’將於一側之面處形成有該複數個遮罩圖樣的 遮罩用基板、以及於一側之面處形成有該複數個微透鏡 的透鏡用基板，以讓該複數個遮罩圖樣與該複數個微透 鏡相互對應的方式相互重疊形成。藉此，將於一側之面 處形成有該複數個遮罩圖樣的遮罩用基板、以及於一側 之面處形成有該複數個微透鏡的透鏡用基板，以使得該 8 201118506 複數個遮罩SI樣與該複數個微透鏡相互辦 兩基板相互重疊㈣成的光罩，使用該光沐方式將 體上形成曝光圖樣。此時，由於複數個遮梯^光 個微透鏡係各自形成於不同的基板上，因此=數 樣有缺陷之情況抑或當間距相同但設計改變；圖 需將形成有遮罩圖樣的遮罩用基板交換即可月可二堇 光罩之成本上升。 了抑制 【實施方式】 以下’根據添附圖式來詳細地說明本發明之實施形 fe、°圖1係本發明曝光裝置之實施形態的概略結構圖。 該曝光裝置係將被曝光體朝一方向搬送，且同時間歇性 地照射曝光光線至該被曝光體以形成曝光圖樣，並具備 有搬送機構1、遮罩台座2、光罩3、曝光光學系統4、 攝影機構5、照明機構6、控制機構7。另外，此處所 使用之被曝光體8係於透明基板一側之面處以特定關 係反覆地形成例如TFT基板之薄膜電晶體般特定形狀 機能之圖樣。 該搬送機構1係將被曝光體8載置於台座9之上方 面並以特定速度朝一方向（箭頭A方向）搬送，並藉由 例如馬達與齒輪等組合所構成的移動機構來移動台座 9。又，搬送機構1係設置有用以檢測台座9移動速度 的速度感測器與用以檢測出台座9移動距離的位置感 測益（省略圖示）。 201118506 前述搬送機構.1上方係設置有遮罩台座2。該遮罩 台座2係接近而面向於被曝光體8(載置於搬送機構ι 而進行搬送)並支撐著後述之光罩3,且對應於包含有光 罩3之遮罩圖樣13的形成區域1〇以及觀測窗17的區 域（參考圖2)而於中央部形成有開口，可進行定位而 支樓光罩3之周緣部。接著，在與台座9之面平行的面 内，與被曝光體8之箭頭A所示搬送方向的約略垂直方 向上，而能與後述攝影機構5 —同地進行移動。又，亦 月依需要而以遮罩台座2之中心為轉軸而於特定角度 範圍内進行迴轉。 光罩3係可自由拆裝地被支撐於前述遮罩台座2 上邊光罩3係形成有複數個遮罩圖樣(與被曝光體8 上所形成之曝光圖樣相似）’在被支撐於遮罩台座2上 之狀態時，係具備有：於被曝光體8搬送方向之約略垂 直方向上以特定間距排列形成有複數個遮罩圖樣的複 數個遮罩圖樣列、以及對應於該複數個遮罩圖樣列之各 ，，圖樣而形成於被曝光體8側以將各遮罩圖樣縮小 =影至被曝光體8上的複數個微透鏡；能藉由後續之遮 搬、、羨到所形成之複數個曝光圖樣來補足被曝光體8 =方向則方側位置處之遮罩圖樣列所形成的複數個 樣、f樣之間處的方式來進行曝光，沿著複數個遮罩圖 7之前述排列方向（被曝光體8搬送方向之約略垂直方 "各自偏移特定尺寸的方式來形成後續之遮罩圖樣列 以及其對應之各微透鏡。 10 201118506 具體說明，光罩3係如圖2 ( b )所示，在例如由 石奂所構成之透明基板11的側之面11a處形成有不 透明鉻（Cr)膜U，該鉻（Cr)膜12係形成有由於圖 2 (a)虛線所示圖樣形成區域丨〇内所形成的特定形狀 之開口所構成之複數個遮罩圖樣13。另外，圖2 (a) 中’為了避免圖式過於須雜，遮罩圖樣13係簡化為相 當於其外形之四角形來表示。符者，前述透明基板U 另側之面lib處’如圖2 (c)所示，係對應於該複數個 遮罩圖樣13而形成有例如倍率0.25倍、焦點距離 0.683mm(對應於波長355nm的紫外線)的複數個微透鏡 14。接著，在遮罩圖樣13朝向被曝光體8上所形成的 投影成像中，係對應於複數個遮罩圖樣13之排列方向 的寬度之整數倍尺寸，而各自朝向前述排列方向偏移該 尺寸的方式來形成各遮罩圖樣列15以及各微透鏡14。 另外，本實施形態的光罩3中，如圖3所示，當例 如一侧邊之長度為W的四角形之情況，關於遮罩圖樣 13朝向被曝光體8上所形成之投影成像16 (相當於後 述曝光圖樣30 (參考圖5))的大小，係以4W間距來 形成各遮罩圖樣列15之複數個遮罩圖樣13，並相對於 第1遮罩圖樣列15a，使得搬送方向前方側的第1遮罩 圖樣列15a之後續的第2、第3、第4遮罩圖樣列15b、 15c、15d以沿著各遮罩圖樣列15之遮罩圖樣13的排列 方向（箭頭A之約略垂直方向）各自偏移w、2W、3W 來形成’而以4W之間距而平行地形成第1〜第4遮罩 201118506 圖樣列15a〜15d。又，如圖2 (a)所示，使得各遮罩 圖樣列15呈平行般地排列形成有3組(以第丨〜第4遮 罩圖樣列15a〜15d作為i組）。因此，一個曝光圖樣係 藉由複數個遮罩圖樣13的重覆曝光方式而形成的。 再者’光罩3之鉻（Cr)膜12係如圖2 (a)所示， 係於圖樣形成區域10之侧邊且距第1遮罩圖樣列l5a 距離D之位置處而形成有與各遮罩圖樣列15約略平行 的細長狀開口部。該開口部係能藉由後述攝影機構5來 觀察被曝光體8表面的觀測窗17。 接著’如圖1所示’以微透鏡14側作為被曝光體 8側’同時以觀測窗17作為被曝光體8搬送方向（箭 頭A方向）之前方侧的方式，將光罩3定位並固定至遮 罩台座2上。 前述遮罩台座2上方係形成有曝光光學系統4。該 曝光光學系統4可針對光罩3照射均勻之光源光線 L1 ’而係具備有光源18、圓柱透鏡(r〇d lens)l9、聚光 鏡20的結構。 前述光源18能放射出例如355nm的紫外線，係由 後述控制機構7來進行點燈控制的例如閃光燈、紫外線 發光雷射光源等。又，前述圓柱透鏡19係設置於從光 源18放射出之光源光線L1的放射方向前方處，用以使 知光源光線L1在垂直於曝光光學系統4光軸的剖面内 ^達到均勻亮度分布。另外，作為使得光源光線L1之 党度分布岣勻化的機構並不限於圓柱透鏡19,亦可使 12 201118506 用光導管或其他習知機構。接著，使得前焦點與圓柱透 之輸出端面19a形成—致的方式來設置前述聚光 鏡2〇，以使得從圓柱透鏡19放射出的光源光線l 為平行光而照射至光罩3。 於則述曝光光學系統4的被曝光體8之箭頭A所示 搬送方向前方侧係設置有攝影機構5。該攝影機構5係 於光罩3之曝光位置的搬送方向前方侧，針對形成於被 曝光體8上之作為定位基準功能圖樣的基準位置、以及 形成於光罩3之觀測窗17内的基準標記而同時 影’而在平行於台座9上方面之面内，於被曝光體8搬 迗方向（箭頭A方向）之約略垂直方向上呈—直線狀地 排列有受光元件的線性攝影機，其長邊中心軸與光罩3 之觀測窗17的長邊中心軸係形成一致的方式進行配 置。另外’於圖i ’符號21係用以使攝影機構5之 光學路徑彎曲的全反射鏡。 前述搬送機構1之台座9下方側係對應於攝影機構 5之攝影區域而設置有照明機構6。該照明機構6係能 從下面側將由阻隔掉紫外線的可見.光所構成之昭明光 線照射至㈣錢8，以使得攝影機構5能針對形成於 被曝光體8表面的功能圖樣進行觀察，而例如為齒素燈 等。另外，照明機構6亦可設置於台座9上方而以麗^ 的方式進行照明。 、設置有連接前述搬送機構i、攝影機構5、光源18、 遮罩台座2以及照明機構6的控制機構7。該㈣機構 13 201118506 7係將被曝光體8朝-方向搬送，且同時經由光罩3將 曝光光線L2 ’性地照射至㈣光體8，以形成對應 於光罩3之複數個遮罩圖樣13的曝光圖樣3〇，炎控制 使？該圖樣係與被曝光體8 ±所形狀功能圖樣相互 重疊，2圖4所示，該控制機構7係具備有圖像處理部 22、演算部23、記憶體24、搬送機構驅動控制器25、 光源驅動控制@ 26、遮|台座驅動控制^ 27、照明機 構驅動控制器28、以及控制部29。 圖像處理部22係針對攝影機構5所取得的被曝光 體8之表面以及光罩3之基準標記的攝影圖像進行圖像 處理’以檢測出該被曝光n 8上功能圖樣所預先設定之 基準位置與光罩3上之基準標記的位置。 又，演算部23係計算出圖像處理部22所檢測出的 被曝光體8上之基準位置與光罩3上基準標記的位置之 間的距離，將該結果與儲存於後述記憶體24中的目桿 值進行比較’再將該差值作為補正值而輸出給遮罩台^ 驅動控制f 27’同時輸入搬送機構】之位置感測器的 輸出值以算出台座9的移動距離，將其結果與儲存於記 憶體24中的被曝光體8功能圖樣之箭搬^ 方向）的排關距W進行比較，當台座9每移 =寺6,便將點燈指令(點亮光源18)輸出給光源驅動控制 再者，記憶體24除了暫時地儲存該演算部23之演 算結果，㈣亦記憶有台座9之移動速度v、被曝光體 201118506 8上之基準位置與光罩3之基準標記的位置之間的距離 目標值、以及其他初始設定值。 又再者，搬送機構驅動控制器25係使得搬送機構 1之台座9沿箭頭A所示方向以固定速度進行移動，輸 入該搬送機構1之速度感測器的出力值，並與儲存於圮 憶體24中的台座9㈣速度進行比較，而使得兩者維 持一致般地針對搬送機構丨進行控制。 接著’光:原驅動控制器26會間歇性地點亮光源 ，依照從演算部23所輸入的胃a '、 傳送給光源18。翰入的點如曰令而將驅動訊號 寻』：遮罩台座驅動控制器27係將遮罩台座2轉 =構二:同地朝向箭頭A所示搬送方向 j 向進仃移動，根據從演算部 垂直方 遮罩台座2的移動。 斤輸入的補正值來控制 再者照、a月機構驅動控 6進行點燈以及熄燈，當 28係用來使照明機構 明機構6,當被曝光體始開關啟動時則點亮照 燈的方式來進行控制。接曝光製程完成時則熄 各構成組件之間，使彳 ’上制部29係控制並調合 動。 “財錢歧料騎地進行驅 其次，說明有關前述結 卜’此處係針對縱橫地排+光裝置的作動。另 四角形曝光圖樣30之情、= 列間距W形成-邊為W的 首先，；心兄進行說明。 知作例如由鍵盤等 寻所構成之操作機構(省略 201118506 圖示）’來輸入：台座9之移動速度v、曝光開始至曝 光完成為止該台座9之移動距離、光源18之功率與點 燈時間、光罩3之第1遮罩圖樣列15與觀測窗17之間 的距離D、形成於被曝光體8上之功能圖樣於箭頭A方 向（搬送方向）的排列間距w、被曝光體8之前述功能 圖樣所預先設定的基準位置與光罩3所形成之基準標 圮之間的距離目標值等，並儲存於記憶體24，以進行 初始設定。 其次’將表面塗布有感光性樹脂的被曝光體8，以 其塗布面朝上的方式載置並定位於台座9上的特定位 置。接著，當啟動曝光開始開關（省略圖示）時，係啟動 控制機構7之搬送機構驅動控制器25，使得台座9以 速度V朝向箭頭A方向移動。此時，搬送機構驅動控 制器25係輸入該搬送機構丨之速度感測器的輸出值， 並與儲存於記憶體24中的速度v進行比較的方式來控 制搬送機構1以使得台座9之移動速度維持V。又，當 啟動曝光開始開關時’亦啟動照明機構驅動控制器28 以點亮照明機構6。同時地，啟動攝影機構5以開始進 行攝影。 隨著台座9之移動來搬送被曝光體8，當被曝光體 8所形成之功能圖樣中位於搬送方向（箭頭A方向）前 方側之功能圖樣到達攝影機構5之攝影區域後，攝影機 構5便會透過光罩3之觀測窗17而拍攝到前述功能圖 樣，同時亦拍攝光罩3之基準標記。接著，將該等攝影 201118506 圖像之電子訊號輸出給控制機構 圖像=部22會針對從攝影機構5;輸:的攝影 功处圖媒進仃圖像處理，並檢測出該被曝光體8之 “圖樣所縣設定的基準位置以及光罩3之 記的位置，而將該等位置資料輸出給演算部23。土不 演算部23會根雜輯處理部22所輸人之前述基 :十資料與光罩3之基準標記之位置資料，來 的距離’再從記憶體24讀取出該兩者之 於屮^目‘值崎灯比較並㈣差值作為補正值並 輸出給遮罩台座驅動控制器27。 遮罩台座驅動控制器27會根據從演算部23所輸入 之補正值’在平行於台座9之面_向箭頭A方向（搬 送方向）之約略垂直方向移動遮罩台座2以 體8與衫3之間的定位。另外，轴作係於針對^曝 光體8整體表面進㈣轴作巾，時常進行的， 免被曝光體8朝向箭頭A之垂直方向的水平 之位置偏移。 取* 又，由圖像處理部22來針對賴職構5所 之攝影圖像的電子訊號來進行圖像處理，而檢 = 曝光體8搬送方向(箭頭A方向)前方側的功能圖樣： 演算部23會根據該搬送機構丨之位置感測器的輪出 來計算出自檢出前述功能圖樣時點以來之該台座9 ♦ 移動距離，並將之與儲存於記憶體24中的^〇罩3的 1遮罩圖樣列15a與觀測窗17之間的距離D進行比 1交$ 201118506 接著，當台座9之移動距離與前述距離D 一致時，演算 部23會將點亮光源18的點燈指令輸出給光源驅動控制 器26。光源驅動控制器26則會根據前述點燈指令而將 驅動訊號輸出給光源18。藉此，光源a便會根據前述 初始設定值而以特定功率來點亮特定時間。 從光源18所放射出的紫外線之光源光線L1係經由 圓柱透鏡19達成亮度分布均勻化之後，藉由聚光鏡20 轉變為平行光並照射至光罩3。通過光罩3的曝光光線 L2會由於微透鏡14而聚焦至被曝光體8上，而如圖3 所示般地針對光罩3之遮罩圖樣π進行縮小投影，並 如圖5所示般地於該被曝光體8上形成一邊為w的四 角形曝光圖樣30。 藉此，如圖3所示，便形成有對應於第1遮罩圖樣 列15a的第1曝光圖樣列31a，相對該第1曝光圖樣列 31a朝向箭頭A方向（搬送方向）之垂直方向偏移W 後形成有對應於第2遮罩圖樣列之第2曝光圖樣列 31b，相對該第1曝光圖樣列31a朝向箭頭A方向（搬 送方向）之垂直方向偏移2W後形成有對應於第3遮罩 圖樣列15c之第3曝光圖樣列31c，相對該第1曝光圖 樣列31a朝向箭頭A方向（搬送方向）之垂直方向偏移 3W後形成有對應於第4遮罩圖樣列l5d之第4曝光圖 樣列31 d。 再者，演算部23會針對由搬送機構1之位置感測 器的輸出值所取得之台座9的移動距離而與儲存於記 201118506 憶體24的初期設定值中，被曝光體8上所形成之功能 圖樣於箭頭A方向（搬送方向）的排列間距w進行比 較，當兩者一致時則將光源18之點燈指令輸出給光源 驅動控制器26。藉此，光源18便會根據前述初期設定 值以特定功率來點亮特定時間。 從光源18所放射出的紫外線之光源光線]^會如前 述般地照射至光罩3。接著，通過光罩3之曝光光線L2 會如前述般地將光罩3之遮罩圖樣13縮小投影至被曝 光體8上，而於被曝光體8上形成一邊長度為w的四 角形曝光圖樣30。之後，台座9每移動距離w，光源 18便會點亮特定時間以形成曝光圖樣3〇,而如圖5所 示般，藉由後續之第2〜第4遮罩圖樣列15b〜⑼所 形成的複數娜光圖樣30來補足位於被曝光體8搬送 方向（箭頭A方向）前方侧位置的第1遮罩圖樣列… 所形成的複數個曝光圖樣3〇之間處，以於被曝光體8 之全體表面形成曝光圖樣3〇。 圖6係光罩3之其他形成範例之主要部份擴大平面 圖’係能縱橫地排列形成圖7中以虛線所包圍之形狀較 大的單位曝光圖樣30s。 u 光罩3中’當搬送方向（箭頭A方向）前; 罩圖樣列15a^絲朗第1曝光則 =^邊長度為^四角形之情況，於第1曝; 示崎方㈣錢方賴續之曝; 形成第2曝光圖樣遍（參考圖7)㈣第2 201118506 列15b，則係設置於第1遮罩圖樣列15a後方處且朝向 崎額A方向之約略垂直方向的偏移量為零。再者，第2 遮覃圖樣列15b後方，於前述第1曝光圖樣30a之朝向 箭額A方向之曝光形成排列在右側之第3曝光圖樣30c \參考圖7)用的第3遮罩圖樣列Me，則係設置於相 對^ !遮罩圖樣列15a朝向箭頭A之約略垂直方向偏移 w的位置處。接著’第3遮罩圖樣列15c後方’於第3 曝光圖樣30c之箭頭A所示搬送方向的正後方所接續地 ^曝光形成第4曝光圖樣30d (參考圖7)用的第4遮 罩圖樣列15d，則係設置於相對第1遮罩圖樣列15a朝 Θ箭頭A之約略垂直方向偏移W的位置處。再者，第 4遮罩圖樣列15d後方’相對第1遮罩圖樣列15a朝向 箭頭A方向之約略垂直方向而偏移之…位置處則設置有 與前述第1〜第4遮罩圖樣列15a〜15d相同組合所構成 的遮罩圖樣列。接著’第1〜第4遮罩圖樣列15a〜15d 於箭頭A方向上之排列間距則係例如為間距3W。 使用如前述般所形成的光罩3之情況，當被曝光體 8朝向箭頭A方向每移動距離2W時便間歇性地將光源 18點亮以進行曝光即可。藉此，可如圖7所示，藉由 後續之遮罩圖樣列15所形成的曝光圖樣30來補足第1 遮罩圖樣列15a所形成的複數個第1曝光圖樣30a之間 處，以於被曝光體8之整體表面上形成曝光圖樣30。 此時，藉由第1〜第4曝光圖樣30a〜30d來形成圖 7中虛線所包園之單位曝光圖樣3〇s ’並縱橫地排列形 20 201118506 亥單位曝光圖樣30s。藉此，在以特定間距縱橫地排 光v成該形狀較大的曝光圖樣之情況時，便可將前述曝 81樣以分割成複數個微小圖樣的方式來形成。 順序另，外，前述第1〜第4遮罩圖樣列15a〜15d之排列 罩圖並非限定於前述方式，亦可適當地更換。又，各遮 樣列之排列間距以及曝光時機係配合預先形成於 破曝光體8上的圖樣間㈣進行設定。 側面又’前述實施形態中’係針對於透明基板11之一 u Ua處形成有複數個遮罩圖樣13，並於透明基板 ^另側面llb處形成有複數個微透鏡14的結構之該 # 3之it況進行說明，但本發明並非限定於此，亦可 精由於一側面處形成有複數個遮罩圖樣Η的遮罩用基 板以及於一側面處形成有該複數個微透鏡14的透鏡 用基板’而讓該複數個料圖樣13與該複數個微透鏡 Η相互對應的方式相互重疊以形成該光罩3。 【圖式簡單說明】 圖1係本發明之曝光裝置的實施形態之概略結構 圖。 圖2係本發明曝光裴置所使用之光罩的結構示意 圖，（a)為平面圖，（b)為側面圖，（c)為底面圖。 圖3係该光罩之部份擴大平面圖。 圖4係顯示該曝光裝置之控制機構的結構之方塊 201118506 圖。 圖5係使用該光罩而於被曝光體上所形成之曝光 圖樣的平面圖。 圖6係該光罩之其他形成範例的模式平面圖。 圖7係使用圖6之光罩所形成之曝光圖樣的模式平 面圖。 【主要元件符號說明】 1 搬送機構 3 光罩 5 攝影機構 7 控制機構 9 台座 11 透明基板 lib 另一側之面 13 遮罩圖樣 15 各遮罩圖樣列 16 投影成像 18 光源 19a 輸出端面 21 全反射鏡 23 演算部 25 搬送機構驅動控制器 2 遮罩台座 4 曝光光學系統 6 照明機構 8 被曝光體 10 遮罩圖樣形成區域 11a 一側之面 12 鉻膜 14 微透鏡 15a~15d 遮罩圖樣列 17 觀測窗區域 19 圓柱透鏡 20 聚光鏡 22 圖像處理部 24 記憶體 26 光源驅動控制器 22 201118506 27 遮罩台座驅動控制器 28 照明機構驅動控制器 29 控制部 30 各曝光圖樣 30a〜30d 曝光圖樣 30s 單位曝光圖樣 31 a〜31 d 曝光圖樣列 U、 L2 光源光線 23201118506 VI. Description of the Invention: [Technical Field] The present invention relates to an exposure apparatus that intermittently irradiates exposure light to the _=toward conveyance and the same pattern when the object to be exposed is turned toward About ~胄' to form an exposure apparatus that exposes the entire surface with high resolution and high density to the exposed object, and the reticle used therefor. [Prior Art of Field Exposure Pattern] A conventional exposure apparatus is an exposure apparatus that intermittently irradiates exposure light to a subject to be exposed by a mask, and exposes the pattern to a specific position, for which the mask is placed: : At the front side of the transport direction of the leather exposure body, by the photographing mechanism: ordering the shirt, and correcting the position of the exposed object and the mask according to the photographed image, while controlling the illumination of the exposure light, the point G is as follows. Japanese Patent Laid-Open No. 2008-76709). However, the conventional exposure apparatus directly transfers the mask pattern formed on the reticle to the object by exposure light that vertically penetrates the reticle, because the light source illuminates the illuminator. The angle of view (collimation half angle), the image of the pattern on the exposed body will be smudged, so that the decomposition can be reduced, and there will be no exposure to form a fine pattern. In the face of the above problem, the microlens is set by corresponding to the mask pattern on the side of the exposed portion of the mask, and the mask pattern is reduced and projected onto the exposed body of the 201118506 light body. There is a problem that the exposure pattern cannot be formed at a portion between the lenses adjacent to each other in the direction perpendicular to the vertical direction, and there is a problem that a fine-density exposure pattern cannot be formed on the entire surface of the object to be exposed. SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to provide an exposure apparatus capable of forming a fine exposure pattern with high decomposition energy and high density at the entire surface of an object to be exposed, and a photomask used therefor. In order to achieve the above object, the exposure apparatus of the present invention conveys the object to be exposed in one direction while intermittently irradiating the exposure light to the object to be exposed through the mask to correspond to the plurality of masks formed on the mask. Forming an exposure pattern on the exposed object, wherein the mask is provided with: a plurality of masks formed by arranging the plurality of mask patterns at a specific pitch along a direction perpendicular to a direction in which the object to be exposed is conveyed a mask pattern column and a plurality of microlenses formed on the object to be exposed by the respective mask patterns corresponding to the plurality of mask pattern columns to reduce and project the mask patterns onto the object to be exposed; Forming a plurality of exposure patterns formed by the subsequent mask pattern columns to complement the plurality of exposure patterns formed on the front side of the mask pattern in the direction of the object to be exposed, and exposing The subsequent mask pattern columns and their respective pairs of microlenses for 201118506 are formed along the order in which the arrangement directions of the plurality of mask patterns are each offset by a specific size. According to the above configuration, the plurality of mask pattern columns formed by arranging the plurality of mask patterns at a predetermined pitch in the direction perpendicular to the direction in which the object to be exposed is conveyed in the direction in which the object to be exposed is conveyed in the direction of the object to be exposed And a plurality of microlenses formed on the side of the object to be exposed to reduce the projection of each mask pattern onto the object to be exposed, corresponding to each mask pattern of the plurality of mask patterns, and can be patterned by the subsequent mask pattern The plurality of exposure patterns are formed to fill the position between the plurality of exposure patterns formed by the mask pattern row on the front side in the direction in which the object is conveyed, and are exposed in an array of > VL multiple mask patterns The directions are respectively offset by a specific size to form a subsequent mask pattern column and each of the corresponding microlenses 'and intermittently irradiate the exposure light to the object to be exposed through the mask to form a corresponding mask. A plurality of mask patterns are formed on the exposed body to form an exposure pattern. At this time, since a plurality of microlenses capable of reducing and projecting each mask pattern onto the object to be exposed are provided on the side of the object to be exposed corresponding to each mask pattern, a fine exposure pattern can be formed with high decomposition energy. Moreover, since the mask pattern row located on the front side in the direction in which the object is to be transported and the respective microlenses corresponding thereto are formed in a plurality of mask patterns by the respective offset sizes, the arrangement can be formed in the plurality of mask patterns. The exposure is performed by slaving a plurality of exposure patterns formed by the subsequent mask pattern columns between a plurality of exposure patterns of the mask pattern on the front side in the direction in which the object is conveyed. Therefore, the entire surface of the month η forms an exposure pattern with high density. 201118506, then, in the projection image formed on the exposed object toward the exposed object, 'the integral multiple of the width corresponding to the arrangement direction of the plurality of mask patterns, each of which is offset toward the arrangement direction The way to form the subsequent mask pattern column and its corresponding microlenses. By using the following mask pattern of the mask pattern row of the mask pattern located at the position in front of the object transport direction and the corresponding microlenses, the projection pattern of the mask pattern projected on the object to be exposed is used. Each of the masks formed by shifting the size in the direction perpendicular to the direction in which the object is to be conveyed is shifted by an integral multiple of the width in the direction perpendicular to the direction in which the object is conveyed, and an exposure pattern is formed on the object to be exposed. Therefore, 'the exposure pattern can be arranged at a higher density. Further, the reticle of the present invention is used in an exposure apparatus for transporting an object to be exposed in one direction while intermittently irradiating exposure light to the object to be exposed to form an exposure pattern, which has: along the object to be exposed The plurality of mask pattern columns formed by arranging the plurality of mask patterns at a specific pitch in a direction perpendicular to the vertical direction, and the mask patterns corresponding to the plurality of mask pattern columns are formed on the exposed body a plurality of microlenses that are projected onto the exposed object by the reduction of the mask patterns; and the plurality of exposure patterns formed by the subsequent mask pattern columns can be complemented in the front side of the object to be exposed The mask pattern column is formed between the plurality of exposure patterns formed by the mask pattern column to form the subsequent mask pattern column in such a manner that the arrangement direction of the plurality of mask patterns is offset by a specific size. And their respective microlenses for 201118506. According to the above configuration, there are a plurality of mask pattern columns which are arranged at a specific pitch along a direction perpendicular to the direction in which the object to be exposed is conveyed, and a mask corresponding to each of the plurality of conceal columns. a plurality of microlenses formed on the side of the object to be exposed to reduce the projection onto the object to be exposed; the plurality of exposure patterns formed by the pattern of the mask can be complemented by the front side of the light transport direction Exposing between the plurality of exposure patterns formed by the mask pattern column to perform the exposure of the plurality of mask patterns in a manner of offsetting the specific size (4) into a subsequent mask pattern column and The photomasks of the respective microlenses are respectively carried to convey the object to be exposed in the − direction, and at the same time, the exposure light is intermittently irradiated to form an exposure pattern. At this time, each of the mask patterns is corresponding to each mask pattern at the side of the object to be exposed. It is provided with a plurality of microlenses that can reduce the size of each mask pattern onto the object to be exposed. 0 This can expose the pattern with high decomposition energy. Moreover, the offsets of the plurality of material patterns are offset. The size of the mask pattern column and the corresponding microlenses in the mask pattern column at a position in front of the direction in which the object is conveyed, so that a plurality of exposures can be formed by the subsequent masking The pattern is filled with a plurality of exposure patterns formed on the front side of the mask pattern in the direction in which the object is to be exposed, and exposure is formed. Therefore, an exposure pattern can be formed at a high density on the entire surface of the object to be exposed. Furthermore, in the image of the projection 201118506 formed by the mask pattern toward the object to be exposed, an integer multiple of the width of the arrangement direction corresponding to the plurality of mask patterns is shifted toward the arrangement direction. The size of the mask pattern column and the corresponding microlenses are formed, whereby the mask pattern column of the mask pattern column located at the position in front of the object transport direction is correspondingly In each of the microlenses, the projection image of the mask pattern projected on the object to be exposed is an integer multiple of the width in the direction perpendicular to the direction in which the object is conveyed. In the size, the exposure mask is formed on the object to be exposed by using the mask formed by shifting the size in the direction perpendicular to the direction in which the object is to be conveyed. Thus, the exposure pattern can be formed at a higher density. The plurality of mask patterns are formed on the surface of the transparent substrate side, and the plurality of microlenses are formed on the other surface of the transparent substrate. Thereby, the surface on the side of the transparent substrate is formed. a plurality of mask patterns and a mask of the plurality of microlenses formed on the other side of the transparent substrate to form an exposure pattern on the exposed object. At this time, since the mask pattern is attached to the microlens Since the transparent substrate is integrally formed, the positional proof between the mask pattern and the microlens is not required. Therefore, the use of the mask is relatively easy. Then, the mask of the plurality of mask patterns is formed at the side of one side. a cover substrate, and a lens substrate having the plurality of microlenses formed on one surface thereof, wherein the plurality of mask patterns and the plurality of microlenses are mutually overlapped . Thereby, the substrate for the mask having the plurality of mask patterns is formed on one side, and the substrate for the lens having the plurality of microlenses formed on one side of the surface, so that the plurality of 8 201118506 The mask SI and the plurality of microlenses cooperate with each other to form a photomask that overlaps with each other (4), and an exposure pattern is formed on the body by using the photo-mapping method. At this time, since a plurality of masks and a plurality of microlens systems are respectively formed on different substrates, the case where the number is defective or the pitch is the same but the design is changed; the mask is required to be formed with the mask pattern. Substrate exchange can increase the cost of the mask. [Embodiment] Hereinafter, the embodiment of the present invention will be described in detail with reference to the accompanying drawings, and Fig. 1 is a schematic configuration diagram of an embodiment of an exposure apparatus of the present invention. The exposure apparatus conveys the object to be exposed in one direction, and simultaneously intermittently irradiates the exposure light to the object to be exposed to form an exposure pattern, and includes a transport mechanism 1, a mask pedestal 2, a mask 3, and an exposure optical system 4. , a photographing mechanism 5, an illumination mechanism 6, and a control mechanism 7. Further, the exposed body 8 used here is formed on the surface of the transparent substrate to form a pattern of a specific shape function such as a thin film transistor of a TFT substrate in a specific relationship. In the transport mechanism 1, the object to be exposed 1 is placed on the upper surface of the pedestal 9 and transported in one direction (arrow A direction) at a specific speed, and the pedestal 9 is moved by a moving mechanism composed of, for example, a combination of a motor and a gear. Further, the transport mechanism 1 is provided with a speed sensor for detecting the moving speed of the pedestal 9 and a position sensing benefit (not shown) for detecting the moving distance of the pedestal 9. 201118506 A mask pedestal 2 is provided above the transport mechanism 1.1. The mask pedestal 2 approaches the exposure target 8 (transported on the transport mechanism ι) and supports the mask 3 described later, and corresponds to the formation region of the mask pattern 13 including the mask 3. An opening is formed in the center portion of the region of the observation window 17 (see FIG. 2), and the peripheral portion of the reticle 3 can be positioned. Then, in a plane parallel to the surface of the pedestal 9, in the direction perpendicular to the direction of conveyance indicated by the arrow A of the object 8 to be exposed, it is possible to move in the same manner as the image forming mechanism 5 described later. Further, the moon is rotated in a specific angle range by the center of the mask pedestal 2 as needed. The reticle 3 is detachably supported on the mask pedestal 2, and the reticle 3 is formed with a plurality of mask patterns (similar to the exposure pattern formed on the exposed body 8) 'is supported by the mask In the state of the pedestal 2, a plurality of mask pattern columns in which a plurality of mask patterns are arranged at a predetermined pitch in a direction perpendicular to the direction in which the object to be exposed 8 is conveyed, and corresponding to the plurality of masks are provided. Each of the pattern columns is formed on the side of the object to be exposed 8 to reduce the mask patterns to a plurality of microlenses on the object 8 to be exposed; the pattern can be formed by subsequent occlusion Exposure is performed by a plurality of exposure patterns to complement the plurality of samples and f-forms formed by the mask pattern column at the side of the exposed body 8 = direction, along the plurality of masks The arrangement direction (the approximately vertical direction of the direction in which the exposed body 8 is conveyed) is shifted by a specific size to form a subsequent mask pattern column and its corresponding microlenses. 10 201118506 Specifically, the mask 3 is as shown in FIG. (b) shown, for example An opaque chromium (Cr) film U is formed on the side surface 11a of the transparent substrate 11 formed by the sarcophagus, and the chromium (Cr) film 12 is formed in the region formed by the pattern shown by the broken line in Fig. 2(a). The plurality of mask patterns 13 formed by the openings of the specific shape formed. In addition, in Fig. 2(a), in order to avoid the pattern being too complicated, the mask pattern 13 is simplified to a square shape corresponding to the outer shape. As shown in FIG. 2(c), the surface lib of the other side of the transparent substrate U is formed to have, for example, a magnification of 0.25 times and a focal length of 0.683 mm corresponding to the plurality of mask patterns 13 (corresponding to a wavelength of 355 nm). a plurality of microlenses 14 of ultraviolet rays. Next, in the projection imaging formed on the mask pattern 13 toward the object 8 to be exposed, an integer multiple of the width of the arrangement direction of the plurality of mask patterns 13 is used, and each Each mask pattern row 15 and each microlens 14 are formed so as to be shifted toward the above-described arrangement direction. Further, in the mask 3 of the present embodiment, as shown in FIG. 3, for example, the length of one side is W. The situation of the quadrilateral, about the mask pattern 13 towards The size of the projection image 16 (corresponding to the exposure pattern 30 (refer to FIG. 5) described later) formed on the exposed body 8 forms a plurality of mask patterns 13 of the mask pattern columns 15 at a pitch of 4 W, and is relative to The first mask pattern row 15a is such that the second, third, and fourth mask pattern columns 15b, 15c, and 15d subsequent to the first mask pattern row 15a on the front side in the transport direction are along the mask pattern columns 15 The arrangement direction of the mask patterns 13 (about the vertical direction of the arrow A) is shifted by w, 2W, and 3W, respectively, and the first to fourth masks 201118506 pattern rows 15a to 15d are formed in parallel at a distance of 4 W. Further, as shown in FIG. 2(a), three sets of mask patterns 15 are arranged in parallel (the second to fourth mask pattern columns 15a to 15d are i groups). Therefore, an exposure pattern is formed by repeated exposure of a plurality of mask patterns 13. Further, the chrome (Cr) film 12 of the photomask 3 is formed on the side of the pattern forming region 10 and at a distance D from the first mask pattern column l5a as shown in Fig. 2(a). Each of the mask pattern rows 15 has an approximately parallel elongated opening. In the opening portion, the observation window 17 on the surface of the object 8 to be exposed can be observed by the imaging unit 5 which will be described later. Then, as shown in FIG. 1 , the photomask 3 is positioned and fixed such that the side of the microlens 14 is the side of the object to be exposed 8 and the observation window 17 is the front side of the direction in which the object 8 is conveyed (the direction of the arrow A). To the mask pedestal 2. An exposure optical system 4 is formed above the mask pedestal 2. The exposure optical system 4 is configured to include a light source 18, a cylindrical lens l9, and a condensing mirror 20 with respect to the illuminating unit 3 by illuminating the illuminating light L1. The light source 18 can emit ultraviolet light of, for example, 355 nm, and is, for example, a flash lamp or an ultraviolet light-emitting laser light source that is controlled by a control mechanism 7 to be described later. Further, the cylindrical lens 19 is disposed in front of the radiation direction of the light source ray L1 emitted from the light source 18 to cause the light source ray L1 to have a uniform luminance distribution in a cross section perpendicular to the optical axis of the exposure optical system 4. Further, the mechanism for homogenizing the distribution of the light source ray L1 is not limited to the cylindrical lens 19, and it is also possible to use a light guide or other conventional mechanism for 12 201118506. Next, the condensing mirror 2 is disposed such that the front focus and the cylindrical through-output end face 19a are formed in such a manner that the light ray 1 emitted from the cylindrical lens 19 is irradiated to the reticle 3 in parallel light. The photographing mechanism 5 is provided on the front side in the transport direction as indicated by an arrow A of the exposure body 8 of the exposure optical system 4. The photographing mechanism 5 is a reference position which is a positioning reference function pattern formed on the object 8 to be exposed, and a reference mark formed in the observation window 17 of the mask 3, on the front side in the transport direction of the exposure position of the mask 3. On the other hand, in the plane parallel to the pedestal 9, a linear camera in which the light receiving elements are linearly arranged in the direction perpendicular to the direction in which the exposed body 8 is moved (the direction of the arrow A) is formed, and the long side thereof is arranged. The central axis is arranged in such a manner that the central axis of the long side of the observation window 17 of the reticle 3 is aligned. Further, the symbol "21" is a total reflection mirror for bending the optical path of the photographing mechanism 5. The lower side of the pedestal 9 of the transport mechanism 1 is provided with an illumination unit 6 corresponding to the photographing area of the photographing unit 5. The illumination mechanism 6 is capable of illuminating the visible light composed of visible light that blocks ultraviolet rays from the lower side to (4) money 8 so that the photographing mechanism 5 can observe the functional pattern formed on the surface of the object 8 to be exposed, for example, for example. For the tooth lamp, etc. In addition, the illumination mechanism 6 may be disposed above the pedestal 9 to illuminate the illuminator. A control mechanism 7 that connects the transport mechanism i, the photographing mechanism 5, the light source 18, the mask pedestal 2, and the illumination mechanism 6 is provided. The (four) mechanism 13 201118506 7 transports the exposed body 8 in the - direction, and simultaneously irradiates the exposure light L2 to the (four) light body 8 via the mask 3 to form a plurality of mask patterns corresponding to the mask 3. 13 exposure patterns 3 〇, inflammation control makes? The pattern overlaps with the shape pattern of the object to be exposed 8 ± 2, and the control unit 7 includes an image processing unit 22, an arithmetic unit 23, a memory 24, a transport mechanism drive controller 25, and The light source drive control @ 26, the cover | pedestal drive control 27, the illumination mechanism drive controller 28, and the control unit 29. The image processing unit 22 performs image processing on the surface of the object 8 to be exposed and the image of the reference mark of the reticle 3 acquired by the imaging unit 5 to detect the preset pattern of the function image on the exposure n 8 . The position of the reference position and the reference mark on the reticle 3. Further, the calculation unit 23 calculates the distance between the reference position on the object 8 to be exposed detected by the image processing unit 22 and the position of the reference mark on the reticle 3, and stores the result in the memory 24 to be described later. The target value is compared and 'the difference is used as the correction value and output to the mask table ^ drive control f 27' while inputting the output value of the position sensor of the transport mechanism to calculate the moving distance of the pedestal 9 The result is compared with the row-off distance W of the arrow moving direction of the function pattern of the exposed body 8 stored in the memory 24, and when the pedestal 9 is moved to the temple 6, the lighting command (lighting source 18) is output. In addition to temporarily storing the calculation result of the calculation unit 23, the memory 24 also stores the movement speed v of the pedestal 9, the reference position on the exposed body 201118506, and the reference mark of the reticle 3. The distance between the positions, the target value, and other initial settings. Further, the transport mechanism drive controller 25 moves the pedestal 9 of the transport mechanism 1 at a fixed speed in the direction indicated by the arrow A, inputs the output value of the speed sensor of the transport mechanism 1, and stores it in the memory. The pedestal 9 (four) speed in the body 24 is compared, so that the two are controlled in the same manner as the transport mechanism 维持. Then, the light: the original drive controller 26 intermittently lights the light source, and transmits it to the light source 18 in accordance with the stomach a' input from the calculation unit 23. The point of John's entry is to drive the signal search: the mask pedestal drive controller 27 rotates the mask pedestal 2 = 2: the same direction moves toward the transport direction j as indicated by the arrow A, according to the calculation The movement of the vertical square mask pedestal 2. The correction value of the input of the kilogram is used to control the re-photographing, the monthly driving control of the month 6 to turn on and off, and the 28-series is used to make the illumination mechanism clear the mechanism 6, and when the exposed start switch is activated, the illumination is turned on. To control. When the exposure process is completed, the components are extinguished, and the upper part 29 is controlled and adjusted. "The money and money are used to drive the ground to drive the next, indicating that the above-mentioned knots are here for the vertical and horizontal row + light device operation. Another quadrilateral exposure pattern 30, = column spacing W is formed - the edge is W first, The brother and the brother are described. For example, an operation mechanism composed of a keyboard or the like (not shown in 201118506) is input to input: the moving speed v of the pedestal 9, the moving distance of the pedestal 9 from the start of exposure to the completion of exposure, and the light source 18 The power and lighting time, the distance D between the first mask pattern row 15 of the mask 3 and the observation window 17, and the arrangement pitch of the function pattern formed on the object 8 to be exposed in the direction of the arrow A (transport direction) The distance between the reference position set in advance by the function pattern of the exposed object 8 and the reference mark formed by the mask 3 is stored in the memory 24 for initial setting. The object to be exposed 8 having the photosensitive resin is placed and positioned at a specific position on the pedestal 9 with the coated surface facing upward. Next, when the exposure start switch (not shown) is activated, the control mechanism 7 is activated. The transport mechanism drives the controller 25 so that the pedestal 9 moves in the direction of the arrow A at the speed V. At this time, the transport mechanism drive controller 25 inputs the output value of the speed sensor of the transport mechanism , and stores it in the memory 24 The speed v in the comparison is used to control the conveying mechanism 1 so that the moving speed of the pedestal 9 is maintained at V. Further, when the exposure start switch is activated, the lighting mechanism driving controller 28 is also activated to illuminate the lighting mechanism 6. Simultaneously, The photographing mechanism 5 is activated to start photographing. When the object to be exposed 8 is transported by the movement of the pedestal 9, the functional pattern located on the front side in the transport direction (arrow A direction) in the functional pattern formed by the exposing body 8 reaches the photographing mechanism 5 After the photographing area, the photographing mechanism 5 captures the function pattern through the observation window 17 of the mask 3, and also captures the reference mark of the mask 3. Then, the electronic signal of the photograph of the photograph 201118506 is output to the control. The mechanism image=portion 22 performs image processing on the image capturing device from the photographing mechanism 5; and detects the "pattern setting of the object to be exposed 8". The position of the reference position and the position of the mask 3 are output to the calculation unit 23. The soil calculation unit 23 receives the above-mentioned base of the person input from the processing unit 22: the distance between the ten data and the positional reference mark of the mask 3, and then reads the two from the memory 24. The value of the value is compared with (4) the difference value as a correction value and output to the mask pedestal drive controller 27. The mask pedestal drive controller 27 moves the mask pedestal 2 to the body 8 and the shirt 3 in a direction slightly parallel to the arrow A direction (transport direction) in accordance with the correction value input from the calculation unit 23 in the direction parallel to the pedestal 9 The positioning between. Further, the shafting is performed on the entire surface of the entire surface of the exposure body 8, and is often performed so as not to be displaced from the horizontal position of the exposure body 8 in the vertical direction of the arrow A. In addition, the image processing unit 22 performs image processing on the electronic signal of the photographed image of the Laiwu structure 5, and detects the function pattern on the front side of the transport direction (arrow A direction) of the exposure body 8: The portion 23 calculates the movement distance of the pedestal 9 ♦ since the point when the function pattern is detected based on the wheel of the position sensor of the transport mechanism, and compares it with the cover 3 stored in the memory 24. The distance D between the mask pattern column 15a and the observation window 17 is compared with 1 by $201118506. Then, when the moving distance of the pedestal 9 coincides with the distance D, the calculation unit 23 outputs the lighting command of the lighting source 18 to The light source drives the controller 26. The light source drive controller 26 outputs a drive signal to the light source 18 in accordance with the aforementioned lighting command. Thereby, the light source a is illuminated at a specific power for a specific time according to the aforementioned initial setting value. The light source ray L1 of the ultraviolet ray emitted from the light source 18 is made uniform by the cylindrical lens 19, and then converted into parallel light by the condensing mirror 20 and irradiated to the reticle 3. The exposure light L2 passing through the reticle 3 is focused on the object to be exposed 8 by the microlens 14, and is projected and projected for the mask pattern π of the reticle 3 as shown in FIG. A quadrangular exposure pattern 30 having one side w is formed on the object 8 to be exposed. As a result, as shown in FIG. 3, the first exposure pattern row 31a corresponding to the first mask pattern row 15a is formed, and the first exposure pattern row 31a is shifted in the vertical direction of the arrow A direction (transport direction). After W, a second exposure pattern row 31b corresponding to the second mask pattern row is formed, and the first exposure pattern row 31a is shifted by 2 W in the vertical direction of the arrow A direction (transport direction), and is formed corresponding to the third mask. The third exposure pattern row 31c of the mask pattern row 15c is shifted by 3 W in the vertical direction of the arrow A direction (transport direction) with respect to the first exposure pattern row 31a, and the fourth exposure corresponding to the fourth mask pattern column 15d is formed. The pattern column is 31 d. Further, the calculation unit 23 forms the exposure target 8 on the moving distance of the pedestal 9 obtained by the output value of the position sensor of the transport mechanism 1 and the initial setting value stored in the memory layer 201118506. The functional patterns are compared in the arrangement pitch w of the arrow A direction (transport direction), and when the two match, the lighting command of the light source 18 is output to the light source drive controller 26. Thereby, the light source 18 is illuminated for a specific time at a specific power according to the aforementioned initial setting value. The light source ray of the ultraviolet ray emitted from the light source 18 is irradiated to the reticle 3 as described above. Then, the exposure light L2 passing through the reticle 3 is projected onto the object to be exposed 8 by shrinking the mask pattern 13 of the reticle 3 as described above, and a quadrangular exposure pattern 30 having a length w on one side is formed on the object to be exposed 8. . Thereafter, each time the pedestal 9 moves by a distance w, the light source 18 is illuminated for a specific time to form an exposure pattern 3, and as shown in FIG. 5, formed by the subsequent second to fourth mask pattern columns 15b to (9). The plurality of nanopatterns 30 complement the plurality of exposure patterns 3 形成 formed by the first mask pattern column located at the front side of the object 8 in the direction of conveyance (arrow A direction), so that the exposed body 8 The entire surface forms an exposure pattern 3〇. Fig. 6 is a plan view showing the main part of the other embodiment of the reticle 3. The enlarged plan view can be vertically and horizontally arranged to form a unit exposure pattern 30s having a large shape surrounded by a broken line in Fig. 7. u In the mask 3 'before the transport direction (arrow A direction); cover pattern 15a ^ slang first exposure = ^ side length is ^ square shape, in the first exposure; showaki side (four) Qian Fang continued The second exposure pattern is formed (refer to FIG. 7). (4) The second 201118506 column 15b is disposed at the rear of the first mask pattern column 15a and has an offset of approximately the vertical direction toward the direction of the mark A. . Further, after the second confinement pattern row 15b, the third mask pattern column for the third exposure pattern 30c (refer to FIG. 7) arranged on the right side is formed by exposure of the first exposure pattern 30a toward the arrow A direction. Me is disposed at a position offset from the arrow A to the direction of the arrow A by a slight deviation in the vertical direction w. Then, the 'fourth mask pattern line 15c rear side' is continuously exposed to the rear side of the transport direction indicated by the arrow A of the third exposure pattern 30c, and the fourth mask pattern for forming the fourth exposure pattern 30d (refer to FIG. 7) is formed. The column 15d is disposed at a position shifted by W from the first mask pattern column 15a toward the approximately vertical direction of the arrow A. Further, the rear side of the fourth mask pattern row 15d is provided with the first to fourth mask pattern columns 15a at a position shifted from the first vertical mask pattern row 15a in the direction perpendicular to the arrow A direction. ~15d The mask pattern column formed by the same combination. Next, the arrangement pitch of the first to fourth mask pattern columns 15a to 15d in the direction of the arrow A is, for example, a pitch of 3W. In the case of using the photomask 3 formed as described above, the light source 18 is intermittently lighted for exposure every time the object to be exposed 8 is moved by 2 W in the direction of the arrow A. Thereby, as shown in FIG. 7, the exposure pattern 30 formed by the mask pattern 15 can be used to complement the plurality of first exposure patterns 30a formed by the first mask pattern column 15a. An exposure pattern 30 is formed on the entire surface of the exposed body 8. At this time, the unit exposure patterns 3〇s' enclosed by the broken lines in Fig. 7 are formed by the first to fourth exposure patterns 30a to 30d, and the horizontally and horizontally arranged patterns 20 201118506 are used. Thereby, when the exposure pattern having a large shape is vertically and horizontally arranged at a specific pitch, the exposure pattern can be formed by dividing into a plurality of minute patterns. In addition, the arrangement of the first to fourth mask patterns 15a to 15d is not limited to the above-described embodiment, and may be appropriately replaced. Further, the arrangement pitch of each of the mask rows and the exposure timing are set in accordance with the pattern (4) formed in advance on the shot exposing body 8. The side surface of the above-mentioned embodiment is a structure in which a plurality of mask patterns 13 are formed at one of U ua of the transparent substrate 11 and a plurality of microlenses 14 are formed on the side surface 11b of the transparent substrate. Although the present invention is not limited thereto, it is also possible to use a substrate for a mask in which a plurality of mask patterns are formed on one side surface and a lens in which the plurality of microlenses 14 are formed at one side surface. The substrate 'overlies the plurality of material patterns 13 and the plurality of microlenses Η to each other to form the reticle 3. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic block diagram showing an embodiment of an exposure apparatus of the present invention. Fig. 2 is a schematic view showing the structure of a photomask used in the exposure apparatus of the present invention, wherein (a) is a plan view, (b) is a side view, and (c) is a bottom view. Figure 3 is a partially enlarged plan view of the reticle. Figure 4 is a block diagram showing the structure of the control mechanism of the exposure apparatus. Fig. 5 is a plan view showing an exposure pattern formed on the object to be exposed using the photomask. Figure 6 is a schematic plan view of another example of the reticle. Figure 7 is a schematic plan view of an exposure pattern formed using the reticle of Figure 6. [Main component symbol description] 1 Transport mechanism 3 Photomask 5 Photographing mechanism 7 Control mechanism 9 Base 11 Transparent substrate lib The other side of the surface 13 Mask pattern 15 Mask pattern column 16 Projection imaging 18 Light source 19a Output end face 21 Total reflection Mirror 23 Calculation unit 25 Transport mechanism drive controller 2 Mask pedestal 4 Exposure optical system 6 Illumination mechanism 8 Face 10 on the side of the pattern forming region 11a by the exposed body 10 Chromium film 14 Microlens 15a to 15d Mask pattern column 17 Observation window area 19 Cylindrical lens 20 Condenser 22 Image processing unit 24 Memory 26 Light source drive controller 22 201118506 27 Mask pedestal drive controller 28 Illumination mechanism drive controller 29 Control unit 30 Exposure pattern 30a~30d Exposure pattern 30s Unit Exposure pattern 31 a~31 d exposure pattern column U, L2 source light 23