[go: up one dir, main page]

TW201044925A - Metal foil tape for circuit substrate - Google Patents

Metal foil tape for circuit substrate Download PDF

Info

Publication number
TW201044925A
TW201044925A TW099103974A TW99103974A TW201044925A TW 201044925 A TW201044925 A TW 201044925A TW 099103974 A TW099103974 A TW 099103974A TW 99103974 A TW99103974 A TW 99103974A TW 201044925 A TW201044925 A TW 201044925A
Authority
TW
Taiwan
Prior art keywords
metal foil
adhesive layer
thickness
adhesive
foil tape
Prior art date
Application number
TW099103974A
Other languages
Chinese (zh)
Inventor
Makoto Shimose
Takuro Hayashi
Satoshi Takahashi
Original Assignee
Kawamura Sangyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawamura Sangyo Co Ltd filed Critical Kawamura Sangyo Co Ltd
Publication of TW201044925A publication Critical patent/TW201044925A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)

Abstract

A metal foil tape for circuit substrate is laminated to a circuit substrate that has preformed a circuit on it, and the used metal foil tape is at least made of the metal foil and an adhesive layer. The thickness of the metal foil is 5-100 μ m, and the thickness of the adhesive is 2-40 μ m.

Description

201044925 六、發明說明: 【發明所屬之技術領域】 本發明關於 TCP ( Tape Carrier Package) 、COF ( Chip on Film)、撓性印刷配線板等的電路基板所用之金 屬箔捲帶。 【先前技術】 0 以往,作爲在電路基板上連接有半導體元件的半導體 裝置,已知TCP或COF等。TCP係由聚醯亞胺薄膜等的 絕緣薄膜(例如12〜ΙΟΟμηι厚x35〜7 0mm寬)、黏著劑 、銅箔(例如1 8 μιη厚)的3層構造所構成,內引線係採 取架空引線(flying lead )的構造,配線間距一般爲 40 μιη以上。相對於此,COF係由絕緣薄膜與銅箔(例如 8〜3 5 μχη厚)所成的2層構造,由於內引線係密接於絕緣 薄膜’故與TCP比較下,容易形成更微細的配線,例如 ζ) 配線間距爲3 Ομιη以下的內引線亦可能。 於前述TCP或COF所代表的半導體裝置中,如何高 效率地使半導體元件動作時所產生的大量之熱進行散熱係 成爲問題。即,所產生的熱係一部分由半導體元件之與電 極焊墊側表面相反側的背面向外部散熱,一部分經由凸塊 、內引線及外引線,由連接有半導體元件的配線基板向外 部散熱。而且,其餘部分係由半導體元件的表面,經由密 封樹脂與絕緣薄膜,向外部散熱。當此散熱不充分時,則 有由於所蓄積的熱而引起半導體元件動作不良之虞。因此 -5- 201044925 ,如何高效率地使半導體元所產生的熱進行散熱,對於半 導體裝置來說係重要的問題。 於如此的狀況下,近年來半導體元件的發熱量係有大 幅增加的傾向,前述散熱的問題係成爲愈來愈大的問題。 例如,於前述COF的情況中,隨著近年來顯示器的大型 化、高解像度化,施加於COF的半導體元件之驅動電壓 及動作頻率變高,因此半導體元件的發熱量增大。 再者,近年來於電子裝置中,要求小型.薄型.輕量 •高性能·高機能、高品質.高可靠性,如此電子裝置中 所用的電路基板亦要求高密度配線。例如,於COF用電 路基板之配線的情況中,要求小型化、高密度化而進行微 細化,內引線的寬度例如小到1 5 μιη以下。因此,上述經 由凸塊、內引線及外引線的散熱之效率降低,半導體元件 的散熱對策係成爲嚴重的問題。 爲了改善如此半導體元件的散熱問題,例如日本發明 專利公開公報第2002-26 1 4〇3號中提案使金屬散熱板經由 黏著劑而黏著在配線基板上的附散熱板之配線基板。然而 ,其中所提案的金屬散熱板之金屬厚度爲0.5〜2mm。如 此地使用厚的金屬當作散熱板時,雖然可確保散熱效率, 但是由於其厚度,配線基板全體係成爲重者,同時由於金 屬的剛性,而新發生容易對配線基板的導體造成傷害的問 題。再者,於金屬所黏著的部位,若將配線基板彎曲,則 在導體發生顯著的應力,亦有導體容易斷裂的問題。又, 使金屬散熱板與配線基板黏著的黏著劑之厚度亦厚到4〇 -6- 201044925 〜150μιη,因此散熱效率降低,同時亦有容易對導體造成 應力的問題。 又,曰本發明專利公開公報第2006-108356號中提案 在一面配置有配線及半導體,在另一面配置有散熱構件的 C OF等之半導體裝置。然而,其中所提案的裝置,除了散 熱構件所配置的位置受到限制,而且對於所使用的散熱構 件之厚度或特性亦沒有付出關心,對於散熱構件所配置的 Q 部位之彎曲等係沒有適應性。結果,於以往的半導體裝置 中,有使用方法受限制的問題。 【發明內容】 本發明鑒於如上述的先前技術之問題點,目的爲提供 可滿足半導體裝置所求的小型化、輕量化之要求,而且耐 熱性或耐折性優異,提高所安裝的半導體元件之散熱性的 可製造電路基板之金屬箔捲帶。 Q 若依照本發明,提供一種電路基板用金屬箔捲帶,其 係層合在預先形成有電路的電路基板上而使用的金屬箔捲 帶’其特徵爲至少由金屬箔與黏著劑層所構成,該金屬箔 的厚度爲5〜1〇〇 μιη,該黏著劑的厚度爲2〜40 μπ1。 【實施方式】 本發明的電路基板用金屬箔捲帶係至少由金屬箔與黏 著劑層所構成,層合在預先形成有電路的電路基板上而使 用者。層合有本發明的金屬箔捲帶之電路基板,係不損害 201044925 耐折性,可提高強度、散熱效率。如此地,僅層合而不損 害電路基板的耐折性’可提高強度及散熱效率的金屬箔捲 帶係以往不存在者。 構成本發明的金屬箔捲帶之前述金屬箔的厚度爲5〜 ΙΟΟμιη,較佳爲7〜90μηι,尤佳爲1〇〜80μιη,更佳爲20 〜60μιη。該厚度若未達5μπι,則散熱效率降低,同時強 度降低,處理(handling)變困難。另一方面,若超過 ΐΟΟμπι,則變過重,同時耐折性有降低的傾向。因此,藉 由使用5〜100 μπι的厚度之金屬箔,可成爲具有強度、散 熱效率和耐折性的金屬箔捲帶。 作爲金屬箔的材質’可使用銅、鋁、鎳、鎢等的任意 金屬或鎳鉻合金、不鏽鋼等的任意合金,從耐折性或加工 性等的觀點來看,較佳爲銅及鋁,再者從成本或耐腐蝕性 等的觀點來看,更佳爲鋁。尙且,金屬箔可具有單層的形 態,也可具有層合的形態。 前述金屬箔的拉伸破壞伸長率較佳爲3 %以上,更佳 爲4 %以上。藉由使用拉伸破壞伸長率爲3 %以上的金屬箔 ,可成爲耐折性更優異的金屬箔捲帶。再者,該拉伸破壞 伸長率的上限値雖然沒有限制,但從製造容易來看,通常 爲3 0 %,較佳爲2 0 %。又,較佳爲使用拉伸彈性模數在5 〜40GPa的範圍之金屬范,尤佳爲10〜35GPa,更佳爲15 〜30GPa。藉由使用拉伸彈性模數爲5GPa以上的金屬箔 ,可不發生皴紋等的外觀上之不良情況,成爲充分強度的 捲帶,而且藉由成爲40GPa以下,對電路基板上所形成 201044925 的配線之傷害變小,耐折性升高。 如此地,拉伸破壞伸長率大及/或拉伸彈性模數低的 金屬箔,例如可藉由在2〇0°C以上的高溫將金屬箔燒鈍處 理而合適地得到。金屬箔的形成方法係沒有特別的限制, 例如可採用軋製方法或電解方法等。 作爲金屬箔捲帶的黏著劑層中所用的黏著劑,可使用 丙烯酸系、環氧系、聚矽氧系等任意的習知黏著劑。於此 0 等之中’從耐熱性或黏著性等的觀點來看,較宜使用丙烯 酸系黏著劑。丙烯酸系黏著劑係含有丙烯酸系聚合物當作 主成分或基礎聚合物的組成物。 前述丙烯酸系聚合物係沒有特別的限制,作爲主構成 單體成分(單體主成分),較佳爲使用(甲基)丙烯酸烷 酯(丙烯酸烷酯、甲基丙烯酸烷酯)。作爲烷酯的烷基, 較佳爲甲基、乙基、正丙基、異丙基、正丁基、異丁基、 第二丁基、第三丁基、戊基、異戊基、新戊基、己基、庚 基、半基、異羊基、2 -乙基己基、壬基、異壬基、癸基、 異癸基、基、十二基等的CU12烷基。 再者’於丙烯酸系聚合物中,由於使用(甲基)丙烯 酸酯當作單體主成分,故(甲基)丙烯酸酯的比例,相對 於單體成分全量而言’以50重量%以上的比例使用係重 要,較佳爲7 0重量%以上,更佳爲8 0重量%以上。(甲 基)丙烯酸酯的比例之上限當然爲丨00重量%以下,較佳 爲9 7重量%以下’更佳爲9 5重量%以下。 作爲構成如此丙烯酸系聚合物的單體成分,可使用1 -9- 201044925 種或2種以上的可與(甲基)丙烯酸酯共聚合的其它單體 成分。作爲如此的共聚合性單體成分,例如亦可使用(甲 基)丙烯酸羥烷酯單體、含羥基的單體、含殘基的單體或 其酸酐、醯胺系單體之含胺基的單體、含環氧基的單體、 含氰基的單體、含官能基的單體、乙烯酯系單體、苯乙烯 系單體、烯烴系單體、含異氰酸酯基的單體之含院氧基的 單體、乙烯醚系單體,以及其它多官能單體。特別地,作 爲共聚合性單體成分,較佳爲(甲基)丙烯酸羥院基等之 含羥基的單體、(甲基)丙烯酸等之含羧基的單體或其酸 酐、二烷基(甲基)丙烯醯胺等的醯胺系單體等之含官能 基的單體成分。因此,作爲丙烯酸系聚合物,較佳爲含有 官能基的丙烯酸系聚合物,特佳可使用含有羧基或羥基的 丙烯酸系聚合物。 於用於形成黏著劑層的丙烯酸系黏著劑組成物中,亦 可配合具有與丙烯酸系聚合物可交聯反應的官能基之硬化 劑’而成爲熱硬化型丙嫌酸系黏著劑。作爲硬化劑,可從 眾所周知的硬化劑中適宜地選擇’例如可舉出甲基化羥甲 基蜜胺、丁基化六羥甲基蜜胺等的多官能蜜胺化合物;二 縮水甘油基苯胺、甘油二縮水甘油基醚等的多官能環氧化 合物;甲苯二異氰酸酯、六亞甲基二異氰酸酯、聚亞甲基 聚苯基異氰酸酯、二苯基甲烷二異氰酸酯、三羥甲基丙烷 甲本一異氰酸酯、聚醚聚聚異氰酸酯、聚酯聚異氰酸酯等 的多官能異氰酸酯化合物等。硬化劑係可組合丨種或2種 以上來使用。作爲本發明的硬化劑,可合適地使用環氧硬 -10- 201044925 化劑。硬化劑的使用量’相對於1 00重量份的丙稀酸系聚 合物而言,通常可爲0.01〜20重量份,較佳可爲〇1〜u 重量份的範圍。 於用於形成黏著劑層的丙烯酸系黏著劑組成物中,視 需要例如亦可含有紫外線吸收劑、光安定劑、剝離調整劑 、可塑劑、軟化劑、塡充劑、著色劑(顏料或染料等)、 防老化劑、界面活性劑、難燃劑、抗靜電劑、抗氧化劑等 0 眾所周知的添加劑等。 由前述成分所成的黏著劑較佳爲其硬化後的拉伸彈性 模數係l〇MPa以下。該拉伸彈性模數若爲10Mpa以下, 則成爲耐折性優異的黏著劑層。從如此的觀點來看,該拉 伸彈性模數較佳爲5MPa以下,更佳爲2MPa以下,特佳 爲IMPa以下。其下限大約〇.〇5MPa,較佳爲O.lMPa。 黏著劑層的形成方法係沒有特別的限制,例如可在作 爲基材的金屬格之指疋面上直接塗佈黏著劑的方法,或在 〇預先施有脫模處理的聚酯等之可剝離的薄膜上形成黏著劑 層後’轉印到金屬箔上之方法等。再者,於黏著劑的塗佈 之際,可使用慣用的塗佈機(例如凹槽輥塗佈機、浸輥式 塗佈機、桿塗機、刀塗機、噴塗機、口模式塗佈機等)。 構成本發明的金屬箔捲帶之黏著劑層的厚度爲2〜 40μιη’較佳爲 3〜30μηι’更佳爲 5〜20μιη。黏著劑層的 厚度若未達2 μηι ’則均一的層形成係困難,同時有密接性 降低之虞,而若超過4 Ομηι,則損害電路基板的耐折性, 同時導致散熱效率的降低。因此,藉由使黏著劑層的厚度 -11 - 201044925 爲2〜4〇μηι ’可成爲密接性、耐折性及散熱性優異的電路 基板用金屬箔捲帶。 於黏著劑層中,藉由配合導熱性塡料,例如氧化矽、 氧化鋁、氮化鋁、氮化硼等,可提高散熱性。 金屬箔捲帶全體的厚度較佳爲7〜140μπι,尤佳爲10 〜120 μιη’更佳爲15〜100 μιη。該厚度若過薄,則強度降 低,處理變困難。另一方面,該厚度若過厚,則耐折性有 降低之虞。惟,此全體的厚度係不含後述脫模薄膜的厚度 Λ[Technical Field] The present invention relates to a metal foil tape used for a circuit board such as a TCP (Leak Carrier Package), a COF (Chip On Film), or a flexible printed wiring board. [Prior Art] 0 Conventionally, as a semiconductor device in which a semiconductor element is connected to a circuit board, TCP or COF or the like is known. The TCP system is composed of an insulating film such as a polyimide film (for example, 12 to ΙΟΟμηι thick x 35 to 70 mm wide), an adhesive, and a copper foil (for example, 18 μm thick). The inner leads are overhead leads. (flying lead) structure, the wiring pitch is generally 40 μηη or more. On the other hand, COF is a two-layer structure in which an insulating film and a copper foil (for example, 8 to 35 μm thick) are formed, and since the inner leads are in close contact with the insulating film, it is easier to form finer wiring than in comparison with TCP. For example, 内) It is also possible to use an inner lead with a wiring pitch of 3 Ομηη or less. In the semiconductor device represented by the above TCP or COF, how to efficiently dissipate a large amount of heat generated when the semiconductor element operates is problematic. That is, a part of the generated heat is radiated to the outside by the back surface of the semiconductor element opposite to the side surface of the electrode pad, and a part of the heat is radiated to the outside by the wiring board to which the semiconductor element is connected via the bump, the inner lead, and the outer lead. Further, the rest is radiated to the outside by the surface of the semiconductor element via the sealing resin and the insulating film. When the heat dissipation is insufficient, there is a possibility that the semiconductor element malfunctions due to the accumulated heat. Therefore, -5-201044925, how to efficiently dissipate the heat generated by the semiconductor element is an important problem for the semiconductor device. Under such circumstances, in recent years, the amount of heat generation of semiconductor elements has been greatly increased, and the problem of heat dissipation has become an increasing problem. For example, in the case of the above-described COF, the drive voltage and the operating frequency of the semiconductor element applied to the COF increase with the increase in size and high resolution of the display in recent years, so that the amount of heat generated by the semiconductor element increases. Further, in recent years, electronic devices have been required to be small, thin, lightweight, high-performance, high-performance, high-quality, and highly reliable, and thus high-density wiring is required for circuit boards used in electronic devices. For example, in the case of wiring of a circuit board for a COF, it is required to be miniaturized and increased in density, and the width of the inner lead is, for example, as small as 15 μm or less. Therefore, the efficiency of heat dissipation by the bumps, the inner leads, and the outer leads is lowered, and the heat radiation countermeasure of the semiconductor element is a serious problem. In order to improve the heat dissipation of the semiconductor element, for example, Japanese Laid-Open Patent Publication No. 2002-26 No. 4/3 proposes a wiring board with a heat dissipation plate in which a metal heat sink is adhered to a wiring board via an adhesive. However, the metal heat sink of the proposed metal has a metal thickness of 0.5 to 2 mm. When a thick metal is used as the heat dissipation plate in this way, although the heat dissipation efficiency can be ensured, the entire system of the wiring substrate becomes heavy due to the thickness thereof, and the rigidity of the metal is newly generated, which causes damage to the conductor of the wiring substrate. . Further, when the wiring board is bent at a portion where the metal is adhered, significant stress is generated in the conductor, and there is a problem that the conductor is easily broken. Further, since the thickness of the adhesive for adhering the metal heat sink to the wiring board is also as thick as 4 〇 -6 - 201044925 to 150 μm, the heat dissipation efficiency is lowered and the conductor is easily stressed. Further, Japanese Laid-Open Patent Publication No. 2006-108356 proposes a semiconductor device such as COF in which a wiring and a semiconductor are disposed on one surface and a heat dissipating member is disposed on the other surface. However, the device proposed therein is not limited in the position where the heat radiating member is disposed, and is not concerned with the thickness or characteristics of the heat radiating member to be used, and is not adapted to the bending of the Q portion where the heat radiating member is disposed. As a result, in the conventional semiconductor device, there is a problem that the method of use is limited. SUMMARY OF THE INVENTION The present invention has been made in view of the above problems of the prior art, and an object of the invention is to provide a semiconductor device that can meet the requirements for miniaturization and weight reduction which are required for a semiconductor device, and which is excellent in heat resistance and folding resistance, and improves the mounted semiconductor device. A heat-dissipating metal foil tape of a circuit board. According to the present invention, there is provided a metal foil tape for a circuit board which is laminated on a circuit board on which a circuit is formed in advance, and which is characterized in that it is composed of at least a metal foil and an adhesive layer. The thickness of the metal foil is 5 to 1 μm, and the thickness of the adhesive is 2 to 40 μπ1. [Embodiment] The metal foil tape for a circuit board of the present invention is composed of at least a metal foil and an adhesive layer, and is laminated on a circuit board on which a circuit is formed in advance. The circuit board in which the metal foil tape of the present invention is laminated does not impair the folding resistance of 201044925, and the strength and heat dissipation efficiency can be improved. As described above, a metal foil tape which is laminated only without impairing the folding resistance of the circuit board, which can improve the strength and heat dissipation efficiency, has not existed in the past. The metal foil constituting the metal foil tape of the present invention has a thickness of 5 to ΙΟΟμηη, preferably 7 to 90 μm, particularly preferably 1 to 80 μm, more preferably 20 to 60 μm. If the thickness is less than 5 μm, the heat dissipation efficiency is lowered, and the strength is lowered, making handling difficult. On the other hand, if it exceeds ΐΟΟμπι, it becomes too heavy and the folding endurance tends to decrease. Therefore, by using a metal foil having a thickness of 5 to 100 μm, it can be a metal foil tape having strength, heat dissipation efficiency, and folding resistance. As the material of the metal foil, any metal such as copper, aluminum, nickel, or tungsten, or any alloy such as a nickel-chromium alloy or stainless steel can be used. From the viewpoint of folding endurance, workability, and the like, copper and aluminum are preferable. Further, from the viewpoint of cost, corrosion resistance, etc., aluminum is more preferable. Further, the metal foil may have a single layer shape or a laminated form. The tensile elongation at break of the metal foil is preferably 3% or more, more preferably 4% or more. By using a metal foil having a tensile elongation at break of 3% or more, it is possible to obtain a metal foil tape which is more excellent in folding resistance. Further, although the upper limit of the tensile elongation at break is not limited, it is usually 30%, preferably 20%, from the viewpoint of easy production. Further, it is preferable to use a metal having a tensile elastic modulus in the range of 5 to 40 GPa, more preferably 10 to 35 GPa, still more preferably 15 to 30 GPa. By using a metal foil having a tensile modulus of 5 GPa or more, it is possible to form a tape of sufficient strength without causing defects in appearance such as crepe, and to form a wiring of 201044925 on the circuit board by 40 GPa or less. The damage is reduced and the folding resistance is increased. In this manner, the metal foil having a large tensile elongation at break and/or a low tensile modulus can be suitably obtained, for example, by subjecting the metal foil to a blunt treatment at a high temperature of 2 Torr °C or higher. The method for forming the metal foil is not particularly limited, and for example, a rolling method, an electrolytic method, or the like can be employed. As the adhesive used in the adhesive layer of the metal foil tape, any conventional adhesive such as an acrylic, epoxy or polyoxygen can be used. In the case of 0 or the like, an acrylic adhesive is preferably used from the viewpoint of heat resistance, adhesion, and the like. The acrylic adhesive contains an acrylic polymer as a constituent of a main component or a base polymer. The acrylic polymer is not particularly limited, and as the main constituent monomer component (monomer main component), an alkyl (meth)acrylate (alkyl acrylate or alkyl methacrylate) is preferably used. The alkyl group as the alkyl ester is preferably methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, t-butyl, t-butyl, pentyl, isopentyl, new A CU12 alkyl group of a pentyl group, a hexyl group, a heptyl group, a half group, an iso-henyl group, a 2-ethylhexyl group, a fluorenyl group, an isodecyl group, an anthracenyl group, an isodecyl group, a yl group, a dodecyl group or the like. In addition, in the acrylic polymer, since (meth) acrylate is used as a monomer main component, the ratio of (meth) acrylate is 50% by weight or more based on the total amount of the monomer component. The proportional use is important, preferably 70% by weight or more, more preferably 80% by weight or more. The upper limit of the ratio of the (meth) acrylate is of course 丨 00% by weight or less, preferably 7% by weight or less, more preferably 9% by weight or less. As the monomer component constituting such an acrylic polymer, 1 -9 to 201044925 or two or more other monomer components copolymerizable with the (meth) acrylate can be used. As such a copolymerizable monomer component, for example, a hydroxyalkyl (meth) acrylate monomer, a hydroxyl group-containing monomer, a residue-containing monomer or an anhydride thereof, and an amine group of a guanamine monomer can also be used. Monomer, epoxy group-containing monomer, cyano group-containing monomer, functional group-containing monomer, vinyl ester monomer, styrene monomer, olefin monomer, isocyanate group-containing monomer Monomers containing alkoxy groups, vinyl ether monomers, and other polyfunctional monomers. In particular, the copolymerizable monomer component is preferably a hydroxyl group-containing monomer such as a (meth)acrylic acid hydroxy group or a carboxyl group-containing monomer such as (meth)acrylic acid or an acid anhydride thereof or a dialkyl group ( A functional group-containing monomer component such as a guanamine-based monomer such as methacrylamide. Therefore, the acrylic polymer is preferably an acrylic polymer containing a functional group, and an acrylic polymer containing a carboxyl group or a hydroxyl group is particularly preferably used. In the acrylic pressure-sensitive adhesive composition for forming an adhesive layer, a heat-curable acrylic acid-based adhesive which is a functional group having a functional group reactive with an acrylic polymer can be blended. As the curing agent, a polyfunctional melamine compound such as methylated methylol melamine or butylated hexamethylol melamine can be appropriately selected from known curing agents; diglycidyl aniline a polyfunctional epoxy compound such as glycerol diglycidyl ether; toluene diisocyanate, hexamethylene diisocyanate, polymethylene polyphenyl isocyanate, diphenylmethane diisocyanate, trimethylolpropane A polyfunctional isocyanate compound such as an isocyanate, a polyether polyisocyanate or a polyester polyisocyanate. The curing agent may be used in combination of two or more kinds. As the hardener of the present invention, an epoxy hard-10-201044925 chemical can be suitably used. The amount of the curing agent used is usually 0.01 to 20 parts by weight, preferably 1 to 5% by weight, based on 100 parts by weight of the acrylic polymer. The acrylic adhesive composition for forming the adhesive layer may, for example, also contain an ultraviolet absorber, a light stabilizer, a peel adjuster, a plasticizer, a softener, a chelating agent, a colorant (pigment or dye). Etc.), anti-aging agents, surfactants, flame retardants, antistatic agents, antioxidants, etc. 0 well-known additives. The adhesive formed of the above components is preferably a tensile modulus of elasticity of 10 MPa or less after curing. When the tensile modulus is 10 MPa or less, the pressure-sensitive adhesive layer is excellent in folding resistance. From such a viewpoint, the tensile modulus of elasticity is preferably 5 MPa or less, more preferably 2 MPa or less, and particularly preferably 1 MPa or less. The lower limit is about 〇5 ,, preferably 0.1 MPa. The method for forming the pressure-sensitive adhesive layer is not particularly limited. For example, a method of directly applying an adhesive to a finger surface of a metal lattice as a substrate, or a peelable polyester or the like which has been previously subjected to a release treatment may be peeled off. A method of transferring onto a metal foil after forming an adhesive layer on the film. Further, in the application of the adhesive, a conventional coater (for example, a gravure coater, a dip roll coater, a bar coater, a knife coater, a spray coater, a die coater) can be used. Machine, etc.). The thickness of the adhesive layer constituting the metal foil tape of the present invention is 2 to 40 μm, preferably 3 to 30 μm, and more preferably 5 to 20 μm. If the thickness of the adhesive layer is less than 2 μηι Å, the uniform layer formation is difficult and the adhesion is lowered, and if it exceeds 4 Ομη, the folding resistance of the circuit substrate is impaired, and the heat dissipation efficiency is lowered. Therefore, the thickness of the adhesive layer -11 - 201044925 is 2 to 4 〇 μη ι ', and the metal foil tape for a circuit board excellent in adhesion, folding resistance, and heat dissipation can be obtained. In the adhesive layer, heat dissipation can be improved by blending a thermal conductive material such as cerium oxide, aluminum oxide, aluminum nitride, boron nitride or the like. The thickness of the entire metal foil reel is preferably from 7 to 140 μm, more preferably from 10 to 120 μm, more preferably from 15 to 100 μm. If the thickness is too thin, the strength is lowered and handling becomes difficult. On the other hand, if the thickness is too thick, the folding endurance is lowered. However, the thickness of the entire portion does not include the thickness of the release film described later.

Cl 之厚度。再者,黏著劑層的厚度對金屬箔的厚度之比(黏 著劑層的厚度/金屬箔的厚度)較佳爲1/50〜2,更佳爲 1/20〜1/1。該比若過小,則對於被附體的黏著力有變弱 之虞,而該比若過大,則使用了不需要的黏著劑,同時散 熱效率有降低之虞。 金屬箔捲帶的寬度係考慮被附體的大小來決定,一般 較佳爲 5〜500mm’尤佳爲 10〜300mm’更佳爲 20〜 200mm。該寬度若過窄,則處理變差,而若過廣也處理變 g 差。 如此所得之金屬箔捲帶,係可藉由以脫模性(剝離性 )薄膜當作保護薄膜層合在黏著劑層上等來進行層合’而 成爲附有保護薄膜的電路基板用金屬箔捲帶。藉此成爲適 合於儲藏、輸送的狀態。於使用之際’剝離保護薄膜’層 合在所欲的電子裝置上。作爲前述保護薄膜’可使用施有 脫模處理的聚酯薄膜或聚乙烯薄膜、聚丙烯薄膜等的任意 薄膜。本發明的金屬箔捲帶可捲繞在適宜的芯上而成爲輥 -12- 201044925 狀。 本發明的金屬箔捲帶,例如可用在TCP、C OF或撓性 印刷配線板等之預先形成有電路的任意電路基板。又,可 層合在電路基板全面’也可層合在電路基板的一部分,其 設置位置係沒有特別的限定,例如可層合在絕緣薄膜之與 半導體元件搭載側相反側的絕緣薄膜面上。又,可層合在 絕緣薄膜的半導體元件搭載側,例如配線之周圍或覆蓋( Q cover lay )薄膜上、阻焊劑上等。若層合在半導體元件搭 載側,則由於與發熱體的半導體元件更接近,即作爲熱傳 達路徑設置在不經由絕緣薄膜的位置,可進一步提高散熱 性。將本發明的金屬箔捲帶層合在被附體的電路基板上之 方法係沒有特別的限定,例如若使用熱層合機等,由於氣 泡不易進入黏著劑層與被附體之間,故較宜。 於被附體上設置金屬箔捲帶後,可藉由加熱或紫外線 等的能量線照射而使黏著劑層硬化。熱硬化的溫度條件係 ◎ 沒有特別的限定,例如可在5 0 °C〜2 6 0 °C進行,尤佳在 80°C〜200°C進行,更佳在100〜180°C進行。溫度若過低 ’由於得到充分的黏著力係需要長時間的硬化,故生產性 降低,而溫度若過高,則有黏著劑層的劣化或發泡之虞。 又,硬化時間亦沒有特別的限定,例如可進行1 0秒〜1 2 小時。 本發明的金屬箔捲帶可用於TCP、C OF或撓性印刷配 線板等的任意電路基板,特別地藉由使用在具有導體寬度 30μπι以下的電路,搭載有半導體的TCP或COF等之電路 -13- 201044925 基板,可防止由半導體驅動時的發熱等所致的溫度上升而 造成的困擾。再者,即使於層合有本發明的金屬箔捲帶之 部位,將電路基板彎曲,由於對電路的傷害小’故可得到 不易發生斷線等的困擾之耐折性優異的電路基板。 以下,以實施例爲基礎來具體說明本發明。惟’本發 明不受本實施例所限定。 實施例1 於厚度50μπι、寬度500mm的鋁箔(住輕鋁箔株式會 社製,1 0 8 5 - 0 ,兩面光澤材,拉伸破壞伸長率4 · 2 %,拉伸 彈性模數2 7.5 GP a )的一面上,塗佈一種硬化後的拉伸彈 性模數爲0.3 8MPa之在甲基丙烯酸烷酯與甲基丙烯酸共聚 合而得的丙烯酸系聚合物中混有當作硬化劑的環氧化合物 之熱硬化型丙烯酸系黏著劑,於1 3 Ot乾燥1分鐘,而形 成厚度8 μπι的黏著劑層後,在該黏著劑層上,疊合一面 經聚矽氧系脫模處理劑施有脫模處理的厚度25μχη之脫模 性薄膜(三菱樹脂株式會社製,MRX )當作保護薄膜’以 成爲具有鋁箔/黏著劑層/保護薄膜的層構成之層合體’再 切割成48mm寬而得到金屬箔捲帶。 於後述條件下,將所得之金屬箔捲帶層合在聚醯亞胺 薄膜上。硬化後的黏著力係優異到0 · 7 6 k N / m,沒有看到 260 °C1分鐘的加熱處理所致的氣泡之發生或凸出•剝落。 於層合在具有0.5mm寬的導體之電路加工薄片上後’在 Μ IT試驗機的耐折性試驗中,顯示474次之優異的耐折性 -14* 201044925 實施例2 除了於金屬箔中,使用3 0 厚的錦涪( 式會社製,1N30,單面光澤材,拉伸破壞伸長 伸彈性模數2 3 · 4 G P a ),切割成1 〇 5 m m以外’ 同樣地得到具有鋁箔/黏著劑層/保護薄膜的層 0 箔捲帶。表1中顯示所得到的金屬箔捲帶之黏 性及耐折性的結果。 實施例3 除了於金屬箔中,使用厚度9μιη的銅箔 箔粉工業株式會社製,RCF-T5B,拉伸破壞伸: 拉伸彈性模數23 .OGPa )以外,與實施例1同 有銅箔/黏著劑層/保護薄膜的層構成之金屬箔 Q中顯示所得到的金屬箔捲帶之黏著力、耐熱性 結果。 實施例4 除了於黏著劑中,使用硬化後的拉伸 3.2 9MPa的丙烯酸系黏著劑以外,與實施例1 具有IS /黏著劑層/保護薄膜的層構成之金屬 1中顯示所得到的金屬箔捲帶之黏著力、耐熱 的結果。 曰本製箔株 率5 · 3 %,拉 與實施例1 構成之金屬 著力、耐熱 (福田金屬 t 率 12.1%, 樣地得到具 捲帶。表 1 及耐折性的 彈性模數爲 同樣地得到 箔捲帶。表 性及耐折性 -15- 201044925 實施例5 除了黏著劑層厚度爲15MmW外’與實施例1同樣地 得到具有鋁箔/黏著劑層/保護薄膜的層構成之金屬箱捲帶 。表1中顯示所得到的金屬箔捲帶之黏著力、耐熱性及耐 折性的結果。 比較例1 除了使用厚度150μιη的鋁箔當作金屬箔以外’與實 施例1同樣地得到具有鋁箔/黏著劑層/保護薄膜的層構成 之金屬箔捲帶。所得到的金屬箔捲帶之黏著力及耐熱性雖 然沒有看到特別的問題,但是由於鋁箔厚到1 50μηι ’故耐 折性爲8 0次之極差的結果。 比較例2 除了黏著劑層厚度爲50μιη以外,與實施例1同樣地 q 得到具有鋁箔/黏著劑層/保護薄膜的層構成之金屬箔捲帶 。所得到的金屬箔捲帶之黏著力雖然良好,但是在260°C 加熱1小時後,確認黏著劑層的發泡爲多數。又,耐折性 爲差到9 5次的結果。 對於由實施例1〜5及比較例1〜2所得之金屬箔捲帶 ,藉由下述的評價方法,評價黏著力、耐熱性、耐折性。 表1中顯示評價結果。再者,關於耐熱性的評價,將沒有 看到由於耐熱試驗而在黏著劑層中發生氣泡的情況當作「 -16- 201044925 〇(良好)」’將看到氣泡的發生之情況當作「X (不良 )」,進行評價。 表1 金屬箔 黏著劑層 耐 熱 性 彎曲 次數 (次) 材 質 厚度 (μιη) 拉伸彈 性模數 (GPa) 拉伸破 壞伸長率 (%) 厚度 (μηι) 硬化後拉伸 彈性模數 (MPa) 黏著力 (kN/m) 實施例1 鋁 50 27.5 4.2 8 0.38 0.76 〇 474 實施例2 鋁 30 23.4 5.3 8 0.38 0.69 〇 654 實施例3 銅 9 23.0 12.1 8 0.38 0.77 〇 456 實施例4 鋁 50 27.5 4.2 8 3.29 0.79 〇 318 實施例5 鋁 50 27.5 4.2 15 0.38 1.11 〇 292 比較例1 鋁 150 27.5 4.2 8 0.38 0.79 〇 80 比較例2 鋁 50 27.5 4.2 50 0.38 1.23 X 95 厚度的測定係在數位測微計(株式會社NIKON製, MS-1 1C + MFC-101 )及數位測微頭中使用超硬扁平測定子The thickness of Cl. Further, the ratio of the thickness of the adhesive layer to the thickness of the metal foil (thickness of the adhesive layer / thickness of the metal foil) is preferably from 1/50 to 2, more preferably from 1/20 to 1/1. If the ratio is too small, the adhesion to the attached body is weakened, and if the ratio is too large, an unnecessary adhesive is used, and the heat dissipation efficiency is lowered. The width of the metal foil tape is determined in consideration of the size of the attached body, and is generally preferably 5 to 500 mm', more preferably 10 to 300 mm', more preferably 20 to 200 mm. If the width is too narrow, the processing is deteriorated, and if it is too wide, the processing is changed to g difference. The metal foil tape obtained in this manner can be laminated by laminating a release film (peelable) film as a protective film on the adhesive layer, and becomes a metal foil for a circuit board with a protective film. Tape and reel. This makes it suitable for storage and transportation. At the time of use, the 'peel protective film' is laminated on the desired electronic device. As the protective film ‘, any film such as a polyester film, a polyethylene film, or a polypropylene film to which mold release treatment is applied can be used. The metal foil reel of the present invention can be wound onto a suitable core to form a roll -12-201044925. The metal foil tape of the present invention can be used, for example, in any circuit board in which a circuit is formed in advance such as TCP, COF or a flexible printed wiring board. Further, it may be laminated on the entire circuit board, or may be laminated on a part of the circuit board, and the installation position thereof is not particularly limited. For example, it may be laminated on the surface of the insulating film opposite to the side on which the semiconductor element is mounted. Further, it may be laminated on the semiconductor element mounting side of the insulating film, for example, around the wiring, on the film (Q cover), on the solder resist, or the like. When laminating on the semiconductor element mounting side, the heat dissipating property can be further improved by being closer to the semiconductor element of the heating element, i.e., as a heat transfer path at a position where the insulating film is not passed. The method of laminating the metal foil tape of the present invention on the circuit board of the attached body is not particularly limited. For example, if a thermal laminator or the like is used, since the bubbles are less likely to enter between the adhesive layer and the attached body, More suitable. After the metal foil tape is placed on the attached body, the adhesive layer can be cured by irradiation with energy rays such as heat or ultraviolet rays. The temperature condition of the thermosetting is not particularly limited, and it can be carried out, for example, at 50 ° C to 2 60 ° C, more preferably at 80 ° C to 200 ° C, more preferably at 100 to 180 ° C. If the temperature is too low, the productivity is lowered because sufficient adhesion is required, and the productivity is lowered. If the temperature is too high, the adhesive layer is deteriorated or foamed. Further, the hardening time is not particularly limited, and for example, it can be carried out for 10 seconds to 12 hours. The metal foil tape of the present invention can be used for any circuit board such as TCP, COF or a flexible printed wiring board, and in particular, a circuit such as TCP or COF in which semiconductors are mounted by using a circuit having a conductor width of 30 μm or less - 13- 201044925 The substrate prevents the temperature rise caused by heat generated by the semiconductor drive. In addition, even if the portion of the metal foil tape of the present invention is laminated, the circuit board is bent and the damage to the circuit is small, so that a circuit board having excellent folding resistance which is less likely to cause breakage or the like can be obtained. Hereinafter, the present invention will be specifically described based on the examples. However, the present invention is not limited by the embodiment. Example 1 Aluminum foil having a thickness of 50 μm and a width of 500 mm (manufactured by Light Aluminum Foil Co., Ltd., 1 0 8 5 - 0, two-sided gloss material, tensile elongation at break 4 · 2 %, tensile elastic modulus 2 7.5 GP a ) On one side, an acrylic compound obtained by copolymerizing an alkyl methacrylate and methacrylic acid having a tensile modulus of 0.3 8 MPa after hardening is mixed with an epoxy compound as a hardener. The thermosetting acrylic adhesive is dried at 1 3 Ot for 1 minute to form an adhesive layer having a thickness of 8 μm, and then laminated on one side of the adhesive layer by a polyfluorene-based release treatment agent. A release film having a thickness of 25 μm (MRX manufactured by Mitsubishi Plastics Co., Ltd.) was used as a protective film to form a laminate of a layer having an aluminum foil/adhesive layer/protective film and then cut into a width of 48 mm to obtain a metal foil. Tape and reel. The obtained metal foil tape was laminated on a polyimide film under the conditions described later. The adhesion after hardening was excellent to 0 · 7 6 k N / m, and the occurrence of bubbles or bulging and peeling caused by heat treatment at 260 ° C for 1 minute was not observed. After laminating on a circuit-processed sheet having a conductor having a width of 0.5 mm, 'in the folding test of the IT test machine, 474 times excellent folding endurance was shown-14* 201044925 Example 2 except in the metal foil , using a 30-inch thick koi (1N30, single-sided gloss material, tensile failure elongation modulus 2 3 · 4 GP a ), cut to 1 〇 5 mm other than the same obtained with aluminum foil / Layer 0 foil tape for adhesive layer/protective film. Table 1 shows the results of the adhesiveness and folding endurance of the obtained metal foil tape. Example 3 A copper foil was produced in the same manner as in Example 1 except that the metal foil was made of a copper foil foil powder company having a thickness of 9 μm, RCF-T5B, tensile elongation at break: tensile modulus of elasticity of 23. OGPa. The metal foil Q of the layer of the adhesive layer/protective film shows the adhesion and heat resistance of the obtained metal foil tape. Example 4 The obtained metal foil was shown in the metal 1 having the layer of the IS/adhesive layer/protective film of Example 1 except that the acrylic adhesive having a thickness of 3.2 9 MPa after curing was used in the adhesive. The result of the adhesion and heat resistance of the tape. The ratio of the slabs of the slabs was 5 · 3 %, and the metal composition of Example 1 was pulled and heat-resistant (the F rate of Fukuda metal was 12.1%, and the tape was obtained in the same manner. The elastic modulus of Table 1 and the folding resistance was the same. A foil tape was obtained. Character and Fold Resistance -15 - 201044925 Example 5 A metal case roll having a layer of an aluminum foil/adhesive layer/protective film was obtained in the same manner as in Example 1 except that the thickness of the adhesive layer was 15 MmW. The results of the adhesion, heat resistance, and folding resistance of the obtained metal foil tape were shown in Table 1. Comparative Example 1 An aluminum foil was obtained in the same manner as in Example 1 except that an aluminum foil having a thickness of 150 μm was used as the metal foil. a metal foil tape composed of a layer of an adhesive layer/protective film. Although the adhesion and heat resistance of the obtained metal foil tape are not particularly problematic, since the aluminum foil is as thick as 1 50 μm, the folding resistance is The results of the extreme difference of 80. Comparative Example 2 A metal foil tape having a layer structure of an aluminum foil/adhesive layer/protective film was obtained in the same manner as in Example 1 except that the thickness of the adhesive layer was 50 μm. Metal foil roll Although the adhesion was good, after heating at 260 ° C for 1 hour, it was confirmed that the foaming of the adhesive layer was a large amount. Further, the folding endurance was a result of the difference of 95 times. For Examples 1 to 5 and Comparative Examples The metal foil tape obtained in 1 to 2 was evaluated for adhesion, heat resistance, and folding resistance by the following evaluation methods. The evaluation results are shown in Table 1. Further, regarding the evaluation of heat resistance, no In the heat resistance test, bubbles were generated in the adhesive layer as "-16- 201044925 〇 (good)". The occurrence of bubbles was evaluated as "X (bad)". Table 1 Metal foil adhesion Heat resistance bending times of the agent layer (times) Material thickness (μιη) Tensile elastic modulus (GPa) Tensile failure elongation (%) Thickness (μηι) Tensile elastic modulus after hardening (MPa) Adhesion (kN/m Example 1 Aluminum 50 27.5 4.2 8 0.38 0.76 〇 474 Example 2 Aluminum 30 23.4 5.3 8 0.38 0.69 〇 654 Example 3 Copper 9 23.0 12.1 8 0.38 0.77 〇 456 Example 4 Aluminum 50 27.5 4.2 8 3.29 0.79 〇318 Implementation Example 5 Aluminum 50 27.5 4.2 15 0.38 1.11 〇292 Comparative Example 1 Aluminum 150 27.5 4.2 8 0.38 0.79 〇80 Comparative Example 2 Aluminum 50 27.5 4.2 50 0.38 1.23 X 95 The thickness is measured by a digital micrometer (manufactured by NIKON, MS-1 1C + MFC-101) and digital Ultra-hard flat gauges used in micrometers

(株式會社MITUTOYO製,工件No.120056)而進行。 再者,金屬箔的厚度係以金屬箔單體來測定,黏著劑層係 測定金屬箔一黏著劑層的2層之合計厚度,以其値與金屬 箔的厚度之差當作黏著劑層的厚度。 黏著力的評價係藉由以下的方法來進行。以金屬箔捲 帶的黏著劑層與聚醯亞胺薄膜接觸的方式,疊合聚醯亞胺 薄膜(東麗•杜邦株式會社製,Kapton 150EN )與金屬箔 捲帶,使用熱層合裝置,在120°C以〇.5m/分鐘的進給速 度進行熱層合’在16〇°C硬化2小時,而成爲金屬箔捲帶 與聚醯亞胺薄膜的層合體。再者,當金屬箔捲帶具有保護 -17- 201044925 薄膜時,預先剝離保護薄膜,與聚醯亞胺薄膜進行層合。 接著,將金屬箔蝕刻加工成2mm寬,以當作測定用試料 ,用雙面膠帶將測定用試料的聚醯亞胺薄膜側固定在厚度 1mm的不鏽鋼板上,以50mm/分鐘的速度,在90°方向中 拉剝金屬箔,將那時的拉剝強度當作黏著力。 耐熱性的評價係藉由以下的方法來進行。於聚醯亞胺 薄膜(東麗•杜邦株式會社製,Kapton 1 50EN )上疊合所 得之金屬箔捲帶,使用熱層合裝置,在120°C以〇.5m/分 鐘的進給速度進行熱層合,在160°C硬化2小時,而成爲 耐熱性評價用試料,置入260°C烘箱中1分鐘,觀察黏著 劑層的變化樣子。 耐折性的評價係藉由以下的方法來進行。將COF用 覆銅層合板(住友金屬鑛山株式會社製,S’PERFLEX,導 體厚度8μιη/聚醯亞胺厚度38μπ〇蝕刻加工,而得到聚醯 亞胺寬度1.0 mm且導體寬度〇.5mm的電路加工薄片。於該 電路加工薄片上,貼合經切斷成1 〇mm寬的金屬箔捲帶, 在120°C以0.5m/分鐘進行熱層合後,在160°C進行2小時 硬化’而成爲耐折性試驗用試料。試驗係使用MIT試驗 機(東洋精機株式會社製,Μ IT耐操疲勞試驗機Μ IT - D A )’在電路加工薄片與金屬箔捲帶重疊的部分進行彎曲試 驗’測定到電路加工薄片的導體發生斷裂爲止的彎曲次數 (彎曲角度±135。,曲率半徑R = 〇.8mm,彎曲速度17 5rpm, 荷重 1 0 0 g f / 1 0 m m W )。 拉伸彈性模數·拉伸破壞伸長率的測定係藉由以下的 -18- 201044925 ' - 方法來進行。關於金屬箔,使用拉伸試驗機(株式會社島 津製作所,Autograph AGS-Η),於夾頭間距離50mm、拉 伸速度5mm/分鐘下測定長度150mm、寬度l〇mm的試料 。又,關於黏著劑,在鋁箔(住輕鋁箔株式會社製,1 08 5 -(manufactured by MITUTOYO Co., Ltd., workpiece No.120056). Further, the thickness of the metal foil is measured by a metal foil monomer, and the adhesive layer is used to measure the total thickness of the two layers of the metal foil-adhesive layer, and the difference between the thickness of the metal foil and the metal foil is used as the adhesive layer. thickness. The evaluation of the adhesion was carried out by the following method. The adhesive film layer of the metal foil tape is brought into contact with the polyimide film to laminate a polyimide film (Kapton 150EN, manufactured by Toray DuPont Co., Ltd.) and a metal foil tape, using a thermal laminating device. The thermal lamination was carried out at a feed rate of 〇.5 m/min at 120 ° C for 2 hours at 16 ° C to form a laminate of a metal foil tape and a polyimide film. Further, when the metal foil tape has the film of the protective -17-201044925, the protective film is peeled off in advance and laminated with the polyimide film. Next, the metal foil was etched into a width of 2 mm to prepare a sample for measurement, and the polyimide film side of the measurement sample was fixed to a stainless steel plate having a thickness of 1 mm with a double-sided tape at a speed of 50 mm/min. Pull the metal foil in the 90° direction and use the stripping strength at that time as the adhesion. The evaluation of heat resistance was carried out by the following method. The metal foil tape obtained by laminating a polyimide film (Kapton 1 50EN, manufactured by Toray DuPont Co., Ltd.) was used at a feed rate of 〇5 m/min at 120 ° C using a thermal laminating apparatus. The laminate was heat-sealed and cured at 160 ° C for 2 hours to be a sample for evaluation of heat resistance, placed in an oven at 260 ° C for 1 minute, and the appearance of the adhesive layer was observed. The evaluation of the folding endurance was carried out by the following method. A copper-clad laminate for COF (S'PERFLEX, manufactured by Sumitomo Metal Mining Co., Ltd., conductor thickness: 8 μm/polyimine, thickness 38 μπ〇) was etched to obtain a polyimide having a width of 1.0 mm and a conductor width of 55 mm. The circuit is processed into a sheet, and a metal foil tape which is cut into a width of 1 mm is bonded to the processed sheet of the circuit, and heat-bonded at 0.5 m/min at 120 ° C, and hardened at 160 ° C for 2 hours. 'The test piece is used for the folding test. The test is performed by using the MIT test machine (manufactured by Toyo Seiki Co., Ltd., Μ IT fatigue tester Μ IT - DA) to bend the portion where the circuit-processed sheet and the metal foil tape are overlapped. Test 'measures the number of bends until the conductor of the circuit-processed sheet breaks (bending angle ± 135., radius of curvature R = 〇.8 mm, bending speed 17 5 rpm, load 1 0 0 gf / 1 0 mm W ). The measurement of the modulus and tensile elongation at break is carried out by the following method -18-201044925 '. For the metal foil, a tensile tester (Shimadzu Corporation, Autograph AGS-Η) is used between the chucks. 50mm distance, stretching Determination of length 150mm, width of the sample under l〇mm of 5mm / minute and, on the adhesive, aluminum foil (aluminum foil lived light Ltd., 1085. -

I 〇,兩面光澤材)上塗佈黏著劑,於130°c乾燥4分鐘, '再於1 6 0 °C使硬化2小時,而形成厚度5 0 μιη的黏著劑層 後,藉由蝕刻來完全除掉鋁箔,而成爲黏著劑單膜,將該 0 黏著劑單膜切割成長度150mm、寬度l〇mm,使用拉伸試 驗機(株式會社島津製作所,Autograph AG-IS),於夾頭 間距離50mm、拉伸速度50mm/分鐘下進行測定。測定係 依據JIS K7127來進行。I 〇, two glossy materials) coated with an adhesive, dried at 130 ° C for 4 minutes, 'hardened at 1 60 ° C for 2 hours, and formed a thickness of 50 μηη adhesive layer, by etching The aluminum foil was completely removed to form a single film of the adhesive, and the single film of the adhesive was cut into a length of 150 mm and a width of l 〇 mm, and a tensile tester (Shimadzu Corporation, Autograph AG-IS) was used between the chucks. The measurement was carried out at a distance of 50 mm and a tensile speed of 50 mm/min. The measurement was carried out in accordance with JIS K7127.

-19--19-

Claims (1)

201044925 七、申請專利範圍: 1· 一種電路基板用金屬箔捲帶,其係層合在預先形成 有電路的電路基板上而使用的金屬箔捲帶’其特徵爲至少 由金屬箔與黏著劑層所構成,該金屬箔的厚度爲5〜 ΙΟΟμηι,該黏著劑的厚度爲2〜40μπι。 2. 如申請專利範圍第1項之金屬箔捲帶,其中前述金 屬箔的拉伸破壞伸長率爲3 %以上。 3. 如申請專利範圍第1或2項之金屬箔捲帶,其中前 述金屬箔的拉伸彈性模數爲5〜40 GP a。 4. 如申請專利範圍第1或2項之金屬箔捲帶,其中前 述金屬箔係鋁箔。 5 ·如申請專利範圍第1或2項之金屬箔捲帶,其中前 述黏著劑層係由丙烯酸系黏著劑所成。 6.如申請專利範圍第5項之金屬箔捲帶,其中前述丙 烯酸系黏著劑層含有丙烯酸系聚合物與環氧硬化劑。 7 ·如申請專利範圍第1或2項之金屬箔捲帶,其中構 成則述黏著劑層的黏著劑之硬化後的拉伸彈性模數爲 1 0 Μ P a以下。 8.如申請專利範圍第〗或2項之金屬箔捲帶,其中在 則述黏著劑層上層合有脫模性薄膜。 201044925 四、指定代表圖: (一) 本案指定代表圖為:無 (二) 本代表圖之元件符號簡單說明:無201044925 VII. Patent application scope: 1. A metal foil tape for a circuit board, which is laminated on a circuit board on which a circuit is formed in advance, and is characterized by at least a metal foil and an adhesive layer. The metal foil has a thickness of 5 to ΙΟΟμηι, and the thickness of the adhesive is 2 to 40 μm. 2. The metal foil reel according to claim 1, wherein the metal foil has a tensile elongation at break of 3% or more. 3. The metal foil tape according to claim 1 or 2, wherein the metal foil has a tensile modulus of 5 to 40 GP a. 4. The metal foil reel according to claim 1 or 2, wherein the metal foil is an aluminum foil. 5. The metal foil reel according to claim 1 or 2, wherein the adhesive layer is made of an acrylic adhesive. 6. The metal foil reel according to claim 5, wherein the acryl-based adhesive layer contains an acrylic polymer and an epoxy curing agent. 7. The metal foil tape according to claim 1 or 2, wherein the adhesive having the adhesive layer has a tensile modulus of elasticity of 10 Å or less. 8. A metal foil tape according to claim </RTI> or 2, wherein a release film is laminated on the adhesive layer. 201044925 IV. Designated representative map: (1) The representative representative of the case is: None (2) The symbol of the representative figure is simple: No -3- 201044925 五 本案若有化學式時’請揭示最能顯示發明特徵的化學 式:無-3- 201044925 V. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: none
TW099103974A 2009-03-12 2010-02-09 Metal foil tape for circuit substrate TW201044925A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009059327A JP2010212584A (en) 2009-03-12 2009-03-12 Metal foil tape for circuit boards

Publications (1)

Publication Number Publication Date
TW201044925A true TW201044925A (en) 2010-12-16

Family

ID=42972436

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099103974A TW201044925A (en) 2009-03-12 2010-02-09 Metal foil tape for circuit substrate

Country Status (3)

Country Link
JP (1) JP2010212584A (en)
KR (1) KR20100103389A (en)
TW (1) TW201044925A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012119563A (en) * 2010-12-02 2012-06-21 Mitsui Mining & Smelting Co Ltd Flexible substrate for semiconductor device, and semiconductor device
JP2013038360A (en) * 2011-08-11 2013-02-21 Toray Ind Inc Metal support flexible board, metal support carrier tape for tape automated bonding using metal support flexible board, metal support flexible circuit board for mounting led, and metal support flexible circuit board with laminated copper foil for circuit formation

Also Published As

Publication number Publication date
JP2010212584A (en) 2010-09-24
KR20100103389A (en) 2010-09-27

Similar Documents

Publication Publication Date Title
JP4430085B2 (en) Dicing die bond film
JP6422462B2 (en) Electronic device packaging tape
KR101183730B1 (en) Film for semiconductor device and semiconductor device
JP5143196B2 (en) Film for semiconductor devices
CN102386054B (en) Film for semiconductor apparatus and semiconductor device
JP4991921B2 (en) Film for semiconductor device and semiconductor device
TWI696683B (en) Adhesive tape for semiconductor processing
WO2010024121A1 (en) Process for production of dicing/die bondind film
JP6877404B2 (en) Electronic device packaging tape
JP6101492B2 (en) Adhesive film, dicing die bond film, semiconductor device manufacturing method, and semiconductor device
JP6310492B2 (en) Electronic device packaging tape
JP2011102383A (en) Thermosetting die-bonding film
KR102346224B1 (en) Adhesive composition, adhesive sheet, and method for producing semiconductor device
JP2010126716A (en) Film roll for manufacturing semiconductor device
JP2014082498A (en) Manufacturing method of dicing die-bonding film
JP5888805B2 (en) Adhesive film and dicing die bond film
JP2019042976A (en) Resin sheet, semiconductor device, and method for using resin sheet
TW201044925A (en) Metal foil tape for circuit substrate
JP5714090B1 (en) Film roll for semiconductor device, method for manufacturing semiconductor device, and semiconductor device
JP6312422B2 (en) Dicing die bond film, semiconductor device manufacturing method, and semiconductor device
JP2011223013A (en) Manufacturing method of dicing die-bonding film
JP5714091B1 (en) Film roll for semiconductor device, method for manufacturing semiconductor device, and semiconductor device
JP2018016705A (en) Tape for electronic devices
JP2015233150A (en) Adhesive film, dicing/die-bonding film, method for manufacturing semiconductor device, and semiconductor device
KR102667558B1 (en) Method for manufacturing a semiconductor device having a double-sided tape for terminal protection and an electromagnetic shielding film