201022837 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種具曝光補償之探針製作用光罩，尤 指一種適用於半導體或微機電製程之光微影製程，以製造 5 出用於晶片測試之探針所需之光罩。 【先前技術】 φ 隨著製程設備技術的發展，許多電子元件都朝向微小 化，相對地用於檢測微型化電子元件之探針元件亦隨須之 10更細微化，方可準確檢測。然而，目前普遍用來製造探針 之半導體或微機電製程，其生產細微尺寸零件時，例如高 階微機電探針尖端細微結構、及直角轉折角之構造，如果 使用曝光機等級較差之設備，在微影製程之後彎折的角度 無法如光罩設計的圖形而轉寫出來，會造成外型輪廓失真 15之問題。然而’此現象主要與曝光機的解析度及其性能有 很大的關聯❶ 請參閱圖4,圖4係習知使用低解析度曝光設備所製造 的探針之示意圖。圖中顯示探針5其係未經曝光補償且使用 較低解析度如曝光光源之波長為36〇奈米（nm)以上或曝光 20功率較低之曝光機所製造。其可明顯看出用於接觸電子元 件之探針尖端銳角52處、及探針直角51的轉折處皆出現圓 角化。據此，此圓角化之探針尖端銳角52將無法用於檢測 細微間距、或接點。其中，對於探針5之探針的尖端銳角Μ 部份極為重要’其會影響接觸電性、接觸應力及探針5的定 3 201022837 位精準度。此外，探針5之針尖需要有較大的接觸面積，若 產生圓角化將導致接觸面積變小，電性隨之便差而導致良 率下降。 雖然，目前高階曝光設備如短波長之x_ray、深紫外光 5 (DeeP UV)、或準分子雷射加工技術（Excimer Laser Micromachining Technology)，已具備符合高解析度之製程 需求，其即使在探針之細微尖端、及直角部份也可以完全 不失真轉寫出來。惟高階曝光設備造價相當昂貴，其運轉、 鲁 保養、及維護成本更不在話下。 10 綜上所述，如何達成一種即使使用較低等級之曝光設 備同樣能達到使探針之直角、及尖端銳角仍保有其應有之 角度之具曝光補償之探針製作用光罩，實在是產業上的一 種迫切需要。 15 【發明内容】 本發明為一種具曝光補償之探針製作用光罩，包括： ® 一透光基板、一不透光層、以及複數個探針透光區域。其 中’不透光層係形成於透光基板上。且複數個探針透光區 域是分散佈設於不透光層上、並且彼此不相鄰接。每一探 20 針透光區域至少包括有一長邊、及一短邊。其長邊與短邊 之間夾設有一直角區。其中’每一探針透光區域更包括有 一透光補償區’而透光補償區鄰接並凸伸於直角區之一 側，藉以增加該直角區之透光面積。據此，本發明考量曝 4 201022837 光之繞射效應’而藉由直角鄰接之透光補償區，使產生的 繞射光在疊加後能得到符合實際要求直角形狀。 本發明一種具曝光補償之探針製作用光罩另一態樣， 包括：一透光基板、一不透光層、以及複數個探針透光區 5 域。其中’不透光層係形成於透光基板上。且複數個探針 透光區域’分散佈設於不透光層上、並且彼此不相鄰接。 且母一探針透光區域至少包括有一第一側邊、及一第二側 邊。其第一側邊與第二側邊之間夾設有一銳角區。其中， ® 每一探針透光區域更包括有一透光補償區。而透光補償區 10 是鄰接並凸伸於銳角區之一側，藉以增加該銳角區之透光 面積。且第一側邊與第二侧邊之間所夾的銳角是小於3〇 度。據此，本發明考量曝光之繞射效應，而藉由銳角區鄰 接之透光補償區，使產生的繞射光在疊加後能得到符合實 際要求銳角形狀。 15 依上所述，本發明能僅使用成本較低廉、波長較長之 杈低等級的曝光設備，即同樣能避免探針尖端、及直角部 0 份之圓角化。 較佳的是’本發明具曝光補償之探針製作用光罩可適 用於波長為360奈米（nm)以上之紫外光曝光光源 。例如紫外 20線波長為365奈米（I-Line)之曝光光源、紫外線波長為4〇5奈 米（H-Lme)之曝光光源、或紫外線波長為436奈米（G Line) 之曝光光源。 【實施方式】 201022837 研參閱圖1，圖1係本發明一較佳實施例之曝光顯影製 程示意圖。圖中顯示有一曝光光源6、一光罩i、一透鏡7、 以及一晶圓8。其中，光罩i具有透光基板1〇、不透光層n、 及複數個探針透光區域2。其中，不透光層u是位於透光 5基板10上方，其可透過濺鍍形成。而複數個探針透光區域 2疋分散佈設於不透光層丨丨内、並且彼此不相鄰接。而當 曝光光源6提供適當波長之光源照射於光罩丨，其中光源會 受到光罩1的遮蔽作用，僅部份光源會透過光罩之探針透 籲光區域2 ’再經透鏡7聚焦於晶圓8上。而晶圓8表面以預先 10塗佈有光阻（圖中未示出），當光阻接受到曝光光源後便顯 影成型探針於晶圓8上，每一探針透光區域2將對應成形出 一支晶片測試用之探針。 請參閱圖2,圖2係本發明一較佳實施例之光罩局部放 大示意圖。圖中放大顯示一探針透光區域2,其包括有二長 15邊23、及二短邊24。其中，每一長邊23與每一短邊24之間 夾設有一直角區21。再者，每一探針透光區域2更包括有四 參個270°圓弧狀扇形之透光補償區31，其透光補償區^是分 別鄰接並凸伸於每一直角區21之一侧，藉以增加直角區21 之透光面積。 20 另外，圖中光罩1的每一探針透光區域2還具有一第一 侧邊221、及一第二側邊222。其中，第一側邊221與第二側 邊222之間夾設有一銳角區22 ,且第一側邊221與第二側邊 222之間所夾的銳角是小於3〇度。而每一探針透光區域2更 包括有一尖錐狀幾何多邊形之透光補償區32。其透光補償 6 201022837 區32疋鄰接包覆並凸伸銳角區22之一侧，藉以增加銳角區 22之透光面積。 请一併請參閱圖1、圖2、及圖3，圖3係本發明一較佳 實施例之顯影成型後.之探針立體圖。#曝光光源6之光線穿 5過光罩1時’會於探針透光區域2產生繞射效應，再藉由上 述之透光補该區31，32，使產生的繞射光線在透光補償區 31，32内疊加繞射後，如圖3所示，能得到符合實際要求的尖 知銳角、及直角之探針4。如此便可消除習知因繞射所造成 ® 直角、或銳角鈍化或圓角化之現象。 10 此外，本實施例具曝光補償之探針製作用光罩，其係 適用於波長為360奈米（nm)以上之紫外光曝光光源。其當然 可以是產業上常見使用的曝光光源為紫外線波長365奈米 (I-Line)、405奈米（H-Line)、或436奈米（G-Line)之曝光設 備。據此，本實施例僅使用成本較低廉、波長較長之較低 15 等級的曝光設備，亦同樣達到能避免探針尖端、及直角部 份圓角化之現象。 〇 上述實施例僅係為了方便說明而舉例而已，本發明所 主張之權利範圍自應以申請專利範圍所述為準，而非僅限 於上述實施例。 20 【圖式簡單說明】 圖1係本發明一較佳實施例之曝光顯影製程示意圖。 圖2係本發明一較佳實施例之光罩局部放大示意圖。 圖3係本發明一較佳實施例之顯影成型後之探針立體圖。 7 201022837 圖4係習知使用低解析度曝光設備所製造的探針之示意圖 【主要元件符號說明】 1 光罩 10 透光基板 11 不透光層 2 探針透光區域 21 直角區 22 銳角區 221 第一側邊 222 第二側邊 23 長邊 24 短邊 31,32透光補償區 4,5 探針 51 探針直角 52 探針尖端銳角 6 曝光光源 7 透鏡201022837 VI. Description of the Invention: [Technical Field] The present invention relates to a photomask for exposing a probe for exposure compensation, and more particularly to a photolithography process suitable for semiconductor or microelectromechanical processes for manufacturing 5 The reticle required for the probe for wafer testing. [Prior Art] φ With the development of process equipment technology, many electronic components are miniaturized, and the probe components for relatively detecting the miniaturized electronic components are also required to be more finely calibrated for accurate detection. However, semiconductor or microelectromechanical processes, which are currently commonly used to fabricate probes, produce fine-sized parts, such as high-order microelectromechanical probe tip microstructures and right-angled corners, if a device with a poor exposure level is used, The angle of bending after the lithography process cannot be transferred as the pattern of the reticle design, which causes the problem of the outline distortion 15 . However, this phenomenon is mainly related to the resolution of the exposure machine and its performance. Referring to Fig. 4, Fig. 4 is a schematic view of a probe manufactured by using a low-resolution exposure apparatus. The probe 5 is shown to be unexposure-compensated and fabricated using an exposure machine having a lower resolution such as an exposure source having a wavelength above 36 nanometers (nm) or a low exposure power of 20. It is apparent that the corners of the probe tip acute angle 52 for contacting the electronic component and the corner of the probe right angle 51 are rounded. Accordingly, the rounded probe tip acute angle 52 will not be used to detect fine pitches, or joints. Among them, it is extremely important for the acute angle Μ portion of the probe of the probe 5, which affects the contact electrical property, the contact stress, and the precision of the probe 5 201022837. In addition, the tip of the probe 5 needs to have a large contact area, and if the fillet is formed, the contact area becomes small, and the electrical property is consequent, resulting in a decrease in yield. Although high-order exposure equipment such as short-wavelength x_ray, deep-light 5 (DeeP UV), or Excimer Laser Micromachining Technology, has high-resolution process requirements, even in probes. The fine tip and right-angled parts can also be completely undistorted. However, high-end exposure equipment is quite expensive, and its operation, maintenance, and maintenance costs are even more important. 10 In summary, how to achieve a probe-making reticle with exposure compensation that achieves the right angle of the probe and the acute angle of the tip even with a lower-level exposure device is really An urgent need in the industry. 15 SUMMARY OF THE INVENTION The present invention is a photomask for exposure compensation, comprising: a light transmissive substrate, an opaque layer, and a plurality of probe light transmissive regions. The 'opaque layer' is formed on the light transmissive substrate. And the plurality of probe light-transmitting regions are dispersedly disposed on the opaque layer and are not adjacent to each other. Each of the 20-pin transparent areas includes at least one long side and one short side. A right-angled area is sandwiched between the long side and the short side. Wherein each of the probe light-transmitting regions further includes a light-transmissive compensation region, and the light-transmitting compensation region abuts and protrudes on one side of the right-angled region, thereby increasing the light-transmitting area of the right-angled region. Accordingly, the present invention considers the diffraction effect of exposure 4 201022837 and the light-transmitting compensation zone adjacent to the right angle, so that the generated diffracted light can obtain a right-angle shape that meets the actual requirements after being superimposed. Another aspect of the photomask for exposure compensation with exposure compensation according to the present invention includes: a light transmissive substrate, an opaque layer, and a plurality of probe light transmissive regions 5 domains. Wherein the opaque layer is formed on the light transmissive substrate. And a plurality of probe light-transmitting regions are dispersedly disposed on the opaque layer and are not adjacent to each other. And the mother-probe light-transmitting region includes at least a first side and a second side. An acute angle region is sandwiched between the first side and the second side. Wherein, each of the probe light transmissive regions further includes a light transmission compensation region. The light-transmissive compensation zone 10 is adjacent to and protrudes from one side of the acute-angled area, thereby increasing the light-transmitting area of the acute-angled area. And the acute angle between the first side and the second side is less than 3 degrees. Accordingly, the present invention considers the diffraction effect of the exposure, and by the light-transmitting compensation region adjacent to the acute angle region, the generated diffracted light can be obtained to have an acute angular shape in accordance with the actual requirements. According to the above, the present invention can use only a lower-cost exposure apparatus having a lower cost and a longer wavelength, that is, it can also avoid the rounding of the probe tip and the right-angled portion. Preferably, the photomask for probe preparation with exposure compensation of the present invention is applicable to an ultraviolet light exposure source having a wavelength of 360 nm or more. For example, an ultraviolet 20-line exposure light source of 365 nm (I-Line), an exposure light source having an ultraviolet wavelength of 4 〇 5 nm (H-Lme), or an exposure light source having an ultraviolet wavelength of 436 nm (G Line). [Embodiment] 201022837 Referring to Figure 1, Figure 1 is a schematic view of an exposure and development process in accordance with a preferred embodiment of the present invention. The figure shows an exposure light source 6, a mask i, a lens 7, and a wafer 8. The mask i has a transparent substrate 1 , an opaque layer n , and a plurality of probe light-transmitting regions 2 . The opaque layer u is located above the light-transmissive substrate 10 and is formed by sputtering. The plurality of probe light-transmitting regions 2 are dispersedly disposed in the opaque layer and are not adjacent to each other. When the exposure light source 6 supplies a light source of a suitable wavelength to the reticle, wherein the light source is shielded by the reticle 1, only a part of the light source passes through the probe of the reticle to penetrate the light region 2' and then is focused by the lens 7. On the wafer 8. The surface of the wafer 8 is coated with a photoresist (not shown) in advance 10, and when the photoresist is received by the exposure source, the probe is developed on the wafer 8, and each of the probe light-transmitting regions 2 corresponds to A probe for wafer testing is formed. Referring to FIG. 2, FIG. 2 is a partial enlarged view of a reticle according to a preferred embodiment of the present invention. The figure shows a probe light transmissive area 2 which includes two long sides 23 and two short sides 24. A straight-angled area 21 is interposed between each of the long sides 23 and each of the short sides 24. Furthermore, each of the probe light-transmitting regions 2 further includes four light-transmissive compensation regions 31 of 270° arc-shaped sectors, and the light-transmitting compensation regions are respectively adjacent to and protruded from one side of each of the right-angle regions 21 In order to increase the light transmission area of the right angle area 21. In addition, each of the probe light-transmitting regions 2 of the reticle 1 has a first side 221 and a second side 222. An acute angle region 22 is interposed between the first side edge 221 and the second side edge 222, and an acute angle between the first side edge 221 and the second side edge 222 is less than 3 degrees. Each of the probe light-transmitting regions 2 further includes a light-transmitting compensation region 32 having a tapered geometric polygon. The light transmission compensation 6 201022837 area 32 疋 adjacently covers and protrudes one side of the acute angle area 22, thereby increasing the light transmission area of the acute angle area 22. Please refer to FIG. 1, FIG. 2, and FIG. 3 together. FIG. 3 is a perspective view of the probe after development and molding according to a preferred embodiment of the present invention. #Exposure light 6 when the light passes through the reticle 1 will produce a diffraction effect in the probe light-transmitting region 2, and then the light-transmitting region 31, 32 is used to make the generated diffracted light pass through. After the diffraction is superimposed in the compensation areas 31, 32, as shown in FIG. 3, the sharp-pointed acute angle and the right-angled probe 4 can be obtained. This eliminates the problem of conventional right angle, or sharp corner passivation or filleting caused by diffraction. Further, in the present embodiment, the mask for probe preparation with exposure compensation is applied to an ultraviolet light exposure source having a wavelength of 360 nm or more. It is of course possible that the exposure light source commonly used in the industry is an exposure apparatus having an ultraviolet wavelength of 365 nm (I-Line), 405 nm (H-Line), or 436 nm (G-Line). Accordingly, this embodiment uses only a lower-cost 15-level exposure apparatus having a lower cost and a longer wavelength, and also achieves a phenomenon in which the tip of the probe and the right-angled portion are rounded. The above-described embodiments are merely examples for the convenience of the description, and the scope of the claims is intended to be limited by the scope of the claims. 20 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing an exposure and development process according to a preferred embodiment of the present invention. 2 is a partially enlarged schematic view of a reticle in accordance with a preferred embodiment of the present invention. Figure 3 is a perspective view of a probe after development molding in accordance with a preferred embodiment of the present invention. 7 201022837 FIG. 4 is a schematic view of a probe manufactured by using a low-resolution exposure apparatus [main element symbol description] 1 photomask 10 transparent substrate 11 opaque layer 2 probe light-transmitting region 21 right-angled region 22 acute-angle region 221 First side 222 Second side 23 Long side 24 Short side 31, 32 Light transmission compensation area 4, 5 Probe 51 Probe right angle 52 Probe tip acute angle 6 Exposure light source 7 Lens