201021400 九、發明說明： 【發明所屬之技術領域】 特別是指一種具有耐衝擊且低成 本發明係有關一種石英晶體振盪器， 本的石英晶體振盈器。 【先前技術】 隨著電子產業蓬勃發展’類比電路時代已經演化成精密的邏輯數位電 路時代巾身為邏輯數位電路叫叫序電路就成為不可或缺的關鍵元 ❹件在時序電路巾；5英曰曰體振盈器為必要的關鍵元件，其可應用的範圍 舉凡如偷魏、遊綠、數_機、手錶科f性產品、電腦、硬碟等 資訊產品’行動電話、無線電電話等通訊產品等。因此，在各種電子產品 ―隨著人性化需求進行演進時’如何使石英晶體振盡器符合趨勢的發展並具 有更優良的運作成效，成為大家所汲汲營營追求的。 請參閲第1圖，其係目前的石英晶體振盈器結構的示意圖。如圖所示， 石英晶截振盈器10包含有-矩形封裝底層12; 一位於封裝底層上之的線路 ❹佈局層14 ’其上具有一置放一系統晶>1 16之孔穴18 ;以及-分設於線路 佈局層14前後兩端，用以緩衝一石英晶體2〇所受衝擊力的前端緩衝層找 與後端緩衝層24，其中石英晶體2〇係利用導電膠黏著於前端緩衝層22 , 前端緩衝層22與後端緩衝層24係用以確保石英晶體2〇穩定的振盪並保護 石英晶體20免受外部衝擊。 但，如圖所述，石英晶體20為藉由前端緩衝層22與後端緩衝層24而 連到穩定的振盪的設計下，石英晶體20整體的尺寸將是較大的且重量較 重。此外，眾所皆知石英晶體的頻率與厚度是成反比的，因此當需要高頻 201021400 率的石英晶料，對厚度6姆㈣的石英晶趙要泣成如習知之大尺寸 是具相當的困難度。 更者在習去技術的石英晶艘振蘆器結構下，製程步驟需先於孔穴a 内置放入系統晶;ί 16’隨後將系統晶片16與線路佈局層14完成打線接合， 然後再將石英晶體20黏ϋ於前端緩衝層22上，最後再進行相_試。但 -須注意，當石英晶趙2〇是不良品時，也同時消耗了一個系統晶片16的成 本’造成成本上的浪費。 〇 核減’本㈣遂針對上述習知技術之缺失H歸新的石英 晶體振盪器，以有效克服上述之該等問題。 【發明内容】 本發明之主要目的在提供—種石英晶體紐^，其所需的石英晶趙體 積較小、重量較輕’因此可以雜整個石英晶體紐㈣重量更者小尺 寸的石英晶趙更適用於高頻的石英晶體，以降低石英晶體的成本。 本發明之另-目的在提供—種石英晶體振妓，其小尺寸與低重量石 ©英晶體’相對提高了固定於緩衝層上之石英晶艘部分所佔石英晶艘整體面 積的百分比’增加機械強度，因此可承受更大的衝擊力，適用於行動電子 裴置上。 本個之再-目的在提供—種^英晶體振轉，其雜石英晶體之緩 衝層與容設祕晶片之歓分設於線路佈局層的兩娜重疊辑（第一區 域與第二區域）’因此可避免因石英晶體不良時，所引起的不必要系統晶片 量浪費。 6 201021400 為達上述之目的，本發明提供-種石英晶趙振盡器，其包含有一封裝 底層；-位於封裝底層上的線路佈局層，其分為—第—區域與—第二區域， 第一區域具有至少-孔穴，第二區域形成有一對緩衝層；一兩端係分別固 定於緩衝層上的石英晶體；一容設於孔穴内的系統晶片：一沿著緩衝層與 線_局層關設置的支撐層；以及—錄讀層上的蓋體。 - 底下藉由具體實施例詳加說明，當更容易瞭解本發明之目的、技術内 容、特點及其所達成之功效。 ❹ 【實施歹式】 請一併參閱第2圖與第3圖，其係本發明之石英晶趙器的立體示 意圖與其剖視圖。如圖所示，本發明之石英晶體振盈器3〇包含有一矩形封 裝底層32 ’其底面具有外部端子；一位於封袭底層32上之的線路佈局層 其刀為兩個不重疊區域，其係分別為第一區域施與第二區域34b (第 3圖之剖視圖係顯示出第一區域恤與第二區域泌的區域範圍但熟悉該 項記憶者當知，此一範圍可依據後續之緩衝層與孔穴大小，而進行適當調 ©整）’第-區域34a上具有一孔穴36，第二區域⑽上形成有—對緩衝層 38 38 ’其表面上設置有内部端子（圖中未示），以電性連接至外部端子 (圖中未示）；一置放於孔穴36的系統晶片40，其係透過打線40電性連接 線路佈局層34上，-；5英晶體42 ’其1¾端制彳帛導電膠44 ϋ著於緩衝 層38 38上’並電性連接至緩衝層38'38，上的内部端子，藉由緩衝層 38 38確保石英晶體42穩定的振盪並保護石英晶體42免受外部衝擊； 沿著緩衝層38、38’與線路佈局層34外圍設置的支標層46 ; 一位於支 7 201021400 撐層上的金屬環48 ;以及一經由電銲密封於金屬環上的蓋體5〇，其係由金 屬片所製成，具有屏蔽效果。 如圖所示，因為本發明之緩衝層38、38，是分設於線路佈局層抑第_ 區域34b的相對邊上，因此所需使用之石英晶體42相較於習知需撗跨前端 緩衝層22與後端緩衝層24 (請參閱習知技術第1圖）的石英晶體2〇在尺 - 寸上相對小很多，因此可以大幅度降低整個石英晶體振盪器中石英晶體的 重量。 〇 更者，在需要較高頻率的石英晶體振盪器時，高頻率的小尺寸石英晶 體的製作成本相較於相同頻率下大尺寸石英晶體也相對較低，石英晶體本 身的機械強度也較高。 此外，因為本發明將石英晶體42與緩衝層38、38，設於線路佈局層 34的第二區域34b上’系統晶片40設置於線路佈局層34的第一區域上 34a’因此’在封裝測試過程中，可先將石英晶體处利用導電膠44固定於 緩衝層38、38’上’先進行測試，確認石英晶體42正常運作後再進行系 ©統晶片40的打線封裝。如此，即可避免習知技術因石英晶體不良時，所引 起的高價格系統晶片浪費。 請參閱第4圖，其係本發明之石英晶體振盈器的另一實施例示意圖。 •=現在車料行動電子產品日益普及，行動電子產品所受浙力衝擎更 是行動電子產品的-大嚴格考驗，而應其中的石英晶體振盡器更是不 此本發明之石英晶體振盡器除了減輕整個石英晶體振盈器的整 趙重量與尺寸外，更可藉由如圖巾所示增設數個導轉44黏著位置，以提 201021400 高固定於緩衝層上之石英晶體所佔石英晶體整體面_百姐來增加機 械強度。 ❹ 综上所述，本發明提供-健新的石英晶體振盡器，其係將石英晶體 之緩衝層與容設系統晶>1之孔穴分設於線路佈局層的第二區域與第一區 域’因此鑑於緩衝層的設置間距縮短，石英晶競的尺寸相對較小，重量也 較輕’可以降低石英晶體的成本。此外，也可避免因石英晶體不良，所引 起的不必要系統“量浪費。更者’在小尺寸與低重量簡提下，相對提 高了固定於_層上之石英晶體部分石英晶難私_百分比，來 增加機械強度’因此可承受更大的衝擊力，適祕行動電子裝置上。 唯以上所述者，僅為本發明之較佳實施例而已，並非用來限〜本 實施之範圍。故即凡依本個巾誠_叙概及_所為2發明 或修飾，均應包括於本發明之申請專利範圍内。 匕 【圖式簡單說明】 第1囷係習知的石英晶體振盪器結構的示意圖。 & 第2圖係本發明之石英晶體振盪器的立體示意圖》 第3囷係本發明之石英晶體振盪器的剖視圖， 第4圖係本發明之石英晶體振盪器的另一實施例示意圓。 【主要元件符號說明】 10 石英晶體振盪器 12 矩形封裝底層 14 線路佈局層 16 系統晶片 201021400201021400 IX. Description of the invention: [Technical field to which the invention pertains] In particular, it relates to an impact-resistant and low-cost invention relating to a quartz crystal oscillator, a quartz crystal vibrator. [Prior Art] With the booming of the electronics industry, the analogy circuit era has evolved into a sophisticated logic digital circuit. The era of the logical digital circuit called the sequence circuit becomes an indispensable key element in the sequential circuit towel; 5 English The body vibrator is a necessary key component, and its applicable range includes information such as stealing Wei, traveling green, counting machine, watch f products, computer, hard disk and other information products, such as mobile phones and radio phones. Products, etc. Therefore, in the evolution of various electronic products “as the humanization needs evolved”, how to make the quartz crystal vibrator conform to the trend and have better operational results, and it has become the pursuit of everyone. Please refer to Fig. 1, which is a schematic diagram of the current quartz crystal vibrator structure. As shown, the quartz crystal intercepting vibrator 10 comprises a rectangular package bottom layer 12; a circuit layer layout layer 14' on the bottom layer of the package has a hole 18 for placing a system crystal > And a plurality of front and rear buffer layers for buffering the impact of a quartz crystal 2, which are disposed at the front and rear ends of the wiring layer 14, wherein the quartz crystal 2 is adhered to the front end buffer by conductive adhesive. The layer 22, the front end buffer layer 22 and the back end buffer layer 24 are used to ensure stable oscillation of the quartz crystal 2 and protect the quartz crystal 20 from external impact. However, as illustrated, the quartz crystal 20 is designed to be connected to a stable oscillation by the front end buffer layer 22 and the back end buffer layer 24. The overall size of the quartz crystal 20 will be large and heavy. In addition, it is well known that the frequency and thickness of a quartz crystal are inversely proportional. Therefore, when a quartz crystal having a high frequency of 201021400 is required, a quartz crystal having a thickness of 6 m (four) is cried as a conventional large size. Difficulty. In addition, under the quartz crystal resonator structure of the prior art, the process step needs to be built into the system crystal before the hole a; ί 16' then the system wafer 16 and the line layout layer 14 are wire-bonded, and then the quartz is The crystal 20 is adhered to the front end buffer layer 22, and finally the phase is tested. However, it should be noted that when quartz crystal 2 is a defective product, it also consumes the cost of one system wafer 16 and causes a waste of cost. 〇 nucleus reduction [B] 遂 The new quartz crystal oscillator is missing from the above-mentioned conventional technology to effectively overcome the above problems. SUMMARY OF THE INVENTION The main object of the present invention is to provide a quartz crystal button, which requires a smaller quartz crystal volume and a lighter weight, so that the entire quartz crystal button can be mixed with a smaller quartz crystal. More suitable for high frequency quartz crystals to reduce the cost of quartz crystals. Another object of the present invention is to provide a quartz crystal vibrating body whose small size and low weight stone © English crystal 'relatively increase the percentage of the total area of the quartz crystal boat occupied by the quartz crystal boat fixed on the buffer layer' Mechanical strength, so it can withstand greater impact forces, suitable for mobile electronic devices. The re-purpose of the present invention is to provide a kind of crystal oscillation, and the buffer layer of the hetero quartz crystal and the buffer layer of the quartz crystal are arranged in the overlap layer of the line layout layer (the first region and the second region). 'Therefore, unnecessary waste of system wafers caused by bad quartz crystals can be avoided. 6 201021400 In order to achieve the above object, the present invention provides a quartz crystal oscillator comprising a package bottom layer; a circuit layout layer on the package bottom layer, which is divided into a first region and a second region, a region has at least a hole, a second region is formed with a pair of buffer layers; a quartz crystal fixed at each end on the buffer layer; a system wafer accommodated in the cavity: a buffer layer and a line layer a set of support layers; and - a cover on the recording layer. - The details, technical contents, features and effects achieved by the present invention will be more readily understood by the detailed description of the embodiments. ❹ [Implementation] Please refer to Fig. 2 and Fig. 3 together, which is a perspective view of a quartz crystallizer of the present invention and a cross-sectional view thereof. As shown, the quartz crystal vibrator 3A of the present invention comprises a rectangular package bottom layer 32' having an external terminal on its bottom surface; and a circuit layout layer on the encapsulation bottom layer 32 having two non-overlapping regions. The first region is respectively applied to the second region 34b (the cross-sectional view of FIG. 3 shows the region range of the first regional shirt and the second region, but is familiar with the memory, and this range can be buffered according to the subsequent buffer. The layer and the hole are sized to have a hole 36 on the first region 34a, and the buffer layer 38 38 ′ is formed on the second region (10) with an internal terminal (not shown) Electrically connected to the external terminal (not shown); a system wafer 40 placed in the hole 36, which is electrically connected to the wiring layout layer 34 through the wire 40, - 5 inch crystal 42 'the 13⁄4 end The conductive conductive adhesive 44 is mounted on the buffer layer 38 38 and electrically connected to the internal terminal of the buffer layer 38'38, and the buffer layer 38 38 ensures stable oscillation of the quartz crystal 42 and protects the quartz crystal 42 from Subject to external impact; along buffer layer 38, 38' a support layer 46 disposed on the periphery of the line layout layer 34; a metal ring 48 on the support layer of the support layer 201021400; and a cover 5〇 sealed to the metal ring via electric welding, which is made of a metal sheet. Has a shielding effect. As shown in the figure, since the buffer layers 38, 38 of the present invention are disposed on opposite sides of the line layout layer _ region 34b, the quartz crystal 42 to be used is required to be buffered across the front end. The quartz crystal 2 of the layer 22 and the back buffer layer 24 (see the prior art Fig. 1) is relatively small in size, so that the weight of the quartz crystal in the entire quartz crystal oscillator can be greatly reduced. In addition, when a quartz crystal oscillator of a higher frequency is required, the fabrication cost of a high-frequency small-sized quartz crystal is relatively lower than that of a large-sized quartz crystal at the same frequency, and the mechanical strength of the quartz crystal itself is also high. . In addition, since the present invention places the quartz crystal 42 and the buffer layers 38, 38 on the second region 34b of the wiring layout layer 34, the system wafer 40 is disposed on the first region 34a of the wiring layout layer 34. In the process, the quartz crystal is first fixed on the buffer layer 38, 38' by using the conductive adhesive 44. First, the test is performed to confirm that the quartz crystal 42 is normally operated, and then the wire bonding package of the system wafer 40 is performed. In this way, it is possible to avoid the waste of high-priced system wafers caused by conventional techniques due to poor quartz crystals. Please refer to Fig. 4, which is a schematic view of another embodiment of the quartz crystal vibrator of the present invention. •=The current mobile electronic products are becoming more and more popular, and the mobile electronic products are subject to the rigorous test of mobile electronic products. The quartz crystal resonators should not be the quartz crystal oscillator of the present invention. In addition to reducing the weight and size of the entire quartz crystal vibrator, it can also be added with a number of guides 44 as shown in the figure to enhance the position of the quartz crystal on the cushion layer. The overall surface of the quartz crystal _ Bai Jie to increase the mechanical strength. In summary, the present invention provides a new quartz crystal resonator which is provided with a buffer layer of a quartz crystal and a hole of a system crystal of the system layer in a second region of the line layout layer and the first The area 'thus, in view of the shortened arrangement pitch of the buffer layer, the quartz crystal size is relatively small and the weight is lighter', which can reduce the cost of the quartz crystal. In addition, it is also possible to avoid unnecessary system "quantity waste" caused by poor quartz crystal. Moreover, under the small size and low weight, the quartz crystal part fixed on the _ layer is relatively difficult to be _ The percentage, to increase the mechanical strength', can withstand greater impact forces, and is suitable for the mobile electronic device. The above is only the preferred embodiment of the present invention and is not intended to limit the scope of the present invention. Therefore, any invention or modification according to the present invention should be included in the scope of the patent application of the present invention. 匕 [Simple description of the drawing] The first quartz crystal oscillator structure is known. 2 is a perspective view of a quartz crystal oscillator of the present invention. FIG. 4 is a cross-sectional view of the quartz crystal oscillator of the present invention, and FIG. 4 is another embodiment of the quartz crystal oscillator of the present invention. Schematic circle. [Main component symbol description] 10 Quartz crystal oscillator 12 Rectangular package bottom layer 14 Line layout layer 16 System wafer 201021400
18 孔穴 20 石英晶體 22 前端緩衝層 24 後端緩衝層 30 石英晶體振盪器 32 矩形封裝底層 34 線路佈局層 34a 第一區域 34b 第二區域 36 孔穴 38、38, 緩衝層 40 系統晶片 42 石英晶體 44 導電膠 46 支撐層 48 金屬環18 Hole 20 Quartz crystal 22 Front end buffer layer 24 Back buffer layer 30 Quartz crystal oscillator 32 Rectangular package bottom layer 34 Line layout layer 34a First area 34b Second area 36 Holes 38, 38, Buffer layer 40 System wafer 42 Quartz crystal 44 Conductive adhesive 46 support layer 48 metal ring